JP4321312B2 - Method for producing group III-V compound semiconductor crystal - Google Patents

Description

  The present invention relates to a method for producing a group III-V compound semiconductor crystal, and more particularly to a method for producing a group III-V compound semiconductor crystal to which carbon is added.

  Conventionally, there have been various prior arts for producing a group III-V compound semiconductor crystal to which carbon has been added.

  For example, Patent Document 1 below discloses a method of manufacturing single crystal GaAs (gallium arsenide) by the vertical Bridgman method (VB method).

  FIG. 4 is a diagram for explaining the method for producing a carbon-added GaAs single crystal disclosed in Patent Document 1. Referring to FIG. 4, seed crystal 53 and GaAs raw material 54 are arranged in crucible 51, and the upper end of crucible 51 is closed by cap means 52. The cap means 52 is provided with an opening 52a, and a carbon disk 56 is disposed on the opening 52a. In this state, the crucible 51 and the like are sealed in the ampoule 57. The ampoule 57 is placed in a vertical furnace and heated, so that the GaAs raw material 54 and the upper half of the seed crystal 53 are melted. Then, in order to grow the single crystal GaAs, the furnace is moved upward with respect to the ampoule 57 in a state where a temperature gradient is generated so that the upper part becomes a high temperature region and the lower part becomes a low temperature region. As a result, the molten GaAs raw material 54b is solidified from the seed crystal 53 side, and a solid single crystal 54a is grown.

  According to this method, the carbon disk 56 is in fluid communication with the GaAs source 54 and gas transfer is possible.

  Further, for example, each of the following Patent Document 2 and Non-Patent Documents 1 and 2 discloses a method of manufacturing single-crystal GaAs by the vertical temperature gradient method (VGF method).

FIG. 5 is a diagram for explaining the method for producing a carbon-added GaAs single crystal disclosed in Patent Document 2. Referring to FIG. 5, seed crystal 63, GaAs raw material 64, and boron oxide (B ₂ O ₃ ) 65 are arranged in crucible 61, and in this state, crucible 61 is sealed in ampoule 67. A carbon source 66 is disposed outside the crucible 61 and at the bottom of the ampoule 67. The GaAs raw material 64 is melted by heating. The solid-liquid interface in the GaAs raw material 64 is shifted from the upper end portion (seed end) of the seed crystal 63 to the upper end portion (tail end) of the GaAs raw material 64, whereby the GaAs raw material 64 is solidified from the seed crystal 63 side. A solid single crystal grows.

During this heating, carbon monoxide generated by the reaction between the carbon source 66 and oxygen of SiO ₂ which is the material of the ampoule 67 is generated, and carbon is added to the GaAs melt by the carbon monoxide and other carbon oxides. .

  FIG. 6 is a diagram for explaining a method for producing a carbon-added GaAs single crystal disclosed in Non-Patent Document 1. Referring to FIG. 6, seed crystal 73, GaAs raw material 74, and boron oxide (not shown) are arranged in crucible 71, and the upper end of crucible 71 is covered by a lid 72, above lid 72. A carbon source 76 is disposed. In this state, the crucible 71 and the like are sealed in the ampoule 77. Thereby, a GaAs single crystal to which carbon is added is manufactured.

FIG. 7 is a diagram for explaining the method for producing a carbon-added GaAs single crystal disclosed in Non-Patent Document 2. Referring to FIG. 7, seed crystal 83, GaAs raw material 84, and boron oxide 85 are disposed in crucible 81, and crucible 81 is disposed in a furnace provided with heater 89. In this state, heating is performed by the heater 89 while supplying carbon monoxide (CO) gas from the outside of the furnace. Thereby, a GaAs single crystal to which carbon is added is manufactured.
Japanese Patent Laid-Open No. 3-122097 WO03 / 005417 pamphlet C. HANNIG et al., "Incorporation of Carbon by VGF-Growth of GaAs", Cryst. Res. Technol. 34 (1999) pp.189-195 T. Buenger et al., "Active Carbon Control During VGF Growth of Semiinsulating GaAs", 2003 GaAs MANTECH

  However, according to the method described in Patent Document 1, the carbon powder directly falls from the carbon disk 56 shown in FIG. 4 onto the GaAs melt 54b and contaminates the GaAs melt 54b. Further, since the amount of carbon falling from the carbon disk 56 is not constant, the carbon concentration in the GaAs single crystal 54a is not constant, and the reproducibility of the carbon concentration is not good.

  Further, according to the method described in Patent Document 2, since the carbon source 66 shown in FIG. 5 is disposed at the lowermost part in the ampoule 67, high-concentration carbon oxide gas is not generated. Even if the carbon oxide gas is generated, the ampule 67 expands.

  Further, according to the method described in Non-Patent Document 1, since the upper end of the crucible 71 shown in FIG. 6 is covered with the lid 72, a high concentration of carbon oxide gas is not generated. Even if carbon gas is generated, the ampoule 77 expands.

  Further, according to the method described in Non-Patent Document 2, since dangerous carbon monoxide gas is used as shown in FIG. 7, gas control is required so as not to harm the human body.

  The object of the present invention is that the reproducibility of the carbon concentration in the semiconductor crystal is good, it is easy to generate a high concentration of carbon oxide gas, and there is no need to supply carbon monoxide gas from the outside of the furnace. It is providing the manufacturing method of a group compound semiconductor crystal.

The method for producing a group III-V compound semiconductor crystal according to the present invention is a method for producing a group III-V compound semiconductor crystal to which carbon has been added, and the III-V group compound raw material and moisture previously synthesized in a crucible. containing the steps of filling a boron oxide, above the opening provided the solid carbon on the upper surface of the crucible so as to react with the gaseous material due to boron oxide evaporated in a crucible, that close the opening The step of arranging the crucible so as to form a semi-enclosed space, the step of heating and melting the compound raw material in a state where the solid carbon is arranged above the opening, the molten compound raw material is solidified, and the carbon is added. Growing a compound semiconductor crystal.

  According to the method for producing a group III-V compound semiconductor crystal of the present invention, since the solid carbon is disposed above the opening provided on the upper surface of the crucible, the gaseous state due to the boron oxide evaporated in the crucible is obtained. The substance can reach the solid carbon without being obstructed by the crucible. In other words, in order for the gaseous substance caused by boron oxide evaporated in the crucible to go out of the crucible and reach the solid carbon, it is only necessary that the gaseous substance continues to move upward in the crucible and change the direction of movement. There is no need. For this reason, since the phenomenon that the gaseous substance adheres to the wall surface of the crucible when changing the direction of movement can be suppressed, the gaseous substance can efficiently reach the carbon. This makes it possible to react the boron oxide-derived gaseous substance and solid carbon efficiently, so even when an airtight container is used, a high concentration of carbon oxide gas can be produced without expanding the airtight container. Can be generated.

  In addition, since carbon oxide gas with a high concentration can be generated, it is not necessary to supply carbon monoxide harmful to the human body from the outside of the furnace into the furnace, so that carbon monoxide gas control becomes unnecessary.

  Further, since the crucible is filled with boron oxide, the compound raw material melted in the crucible is covered with boron oxide. For this reason, even if the carbon powder falls from the solid carbon, the carbon powder falls on the boron oxide, and most of the carbon powder floats on the boron oxide, and the carbon powder falls directly onto the molten compound raw material. There is no. Therefore, contamination of the compound raw material can be suppressed, the carbon concentration in the semiconductor crystal can be easily made constant, and the reproducibility of the carbon concentration is improved.

  Moreover, since the amount of gaseous substance due to boron oxide passing through the opening changes by adjusting the opening area of the opening of the crucible, the amount of carbon oxide gas generated by the reaction can also be adjusted. In addition, the carbon concentration in the semiconductor crystal can be adjusted.

  In this specification, “crucible” is a concept that includes a crucible body and its lid. Therefore, “opening” in a “crucible” means that an opening is provided in the crucible when there is no lid. This means that when the lid is arranged at the upper end of the crucible, an opening is provided in the lid. In addition, the “upper surface of the crucible” is a “crucible” that is located above the surface of the melt and faces the surface of the melt when the compound raw material filled in the “crucible” is melted. Means the face.

Since the inside of the crucible is a semi-enclosed space, the concentration of carbon oxide gas in the space above the boron oxide in the crucible locally increases. For this reason, even when an airtight container is used, it is possible to generate a higher concentration of carbon oxide gas without expanding the airtight container.
Further, since the vapor pressure increases by several orders of magnitude when boron oxide contains water, boron oxide contributes effectively to the generation of carbon oxide gas. Further, the moisture in the boron oxide is also effective for removing impurities in the compound raw material. Furthermore, the water in the boron oxide is considered to have an influence on the incorporation of carbon into the crystal. In addition, the moisture in boron oxide is evaporated by heating during the growth of the semiconductor crystal to become water vapor, and the oxide gas generated from the water vapor or boron oxide reacts with solid carbon to generate carbon oxide gas. Conceivable. Carbon is supplied from this carbon oxide gas to the melt of the compound raw material.

  Preferably, in the method for producing a group III-V compound semiconductor crystal described above, the solid carbon is placed between the crucible filled with the compound raw material and boron oxide and the solid carbon in a state where the solid carbon is disposed above the opening. The method further includes a step of sealing in an airtight container.

  In the above method for producing a group III-V compound semiconductor crystal, a carbon receiver for receiving carbon dropped from solid carbon is preferably disposed in the crucible.

  Thereby, it can prevent that the carbon powder which fell from the solid carbon falls to boron oxide. Therefore, contamination of the melt of the compound raw material can be further suppressed, and it becomes easier to make the carbon concentration in the semiconductor crystal constant, and the reproducibility of the carbon concentration is improved.

  Preferably, in the above III-V compound semiconductor crystal manufacturing method, the solid carbon is placed above the opening, and the crucible filled with the compound raw material and boron oxide and the solid carbon are placed in another container. The method further includes the step of disposing in the chamber without sealing.

  This boron oxide preferably contains 10 ppm to 200 ppm by weight, more preferably 30 ppm to less than 145 ppm, more preferably 50 ppm to 90 ppm. More preferably, it contains less than ppm water.

  In the above method for producing a group III-V compound semiconductor crystal, preferably, carbon is added to the compound raw material in advance before filling the crucible.

  Since the amount of carbon oxide gradually increases due to the reaction between the gaseous substance caused by boron oxide and solid carbon, the carbon concentration in the semiconductor crystal may increase in the second half of the growth of the semiconductor crystal. On the other hand, when carbon is added to the compound raw material in advance, the carbon concentration in the semiconductor crystal decreases in the latter half of the growth of the semiconductor crystal. Therefore, by adding carbon to the compound raw material in advance, the balance between the decrease in carbon concentration in the latter half of the growth due to the pre-added carbon and the increase in carbon concentration in the second half of the growth due to carbon oxide generated by the reaction is balanced. Therefore, a semiconductor crystal having a uniform carbon concentration can be obtained throughout the growth.

Preferably, in the above method for producing a group III-V compound semiconductor crystal, the average carbon concentration of the compound raw material before filling in the crucible is 0.5 × 10 ¹⁵ atoms · cm ⁻³ or more and 25 × 10 ¹⁵ atoms · cm ⁻³ or less.

Since carbon added in advance to the compound raw material reacts with boron oxide, the amount of carbon taken into the growing semiconductor crystal is about one-half to one-tenth of the added amount. For this reason, it is necessary to use a compound raw material having a relatively high carbon concentration. If the carbon concentration is less than 0.5 × 10 ¹⁵ atms · cm ⁻³ , the above effect cannot be obtained sufficiently, and if it exceeds 25 × 10 ¹⁵ atms · cm ⁻³ , carbon in the latter half of the growth due to carbon oxide generated by the reaction. It becomes difficult to balance the increase in concentration. The carbon concentration is more preferably 1 × 10 ¹⁵ atms · cm ^{−3 to} 20 × 10 ¹⁵ atms · cm ⁻³ , and even more preferably 1.5 × 10 ¹⁵ atms · cm ^{−3 to} 15 × 10. ¹⁵ atms · cm ⁻³ or less.

  In the method for producing a group III-V compound semiconductor crystal, preferably, the compound raw material is held in a molten state for a certain period of time before the molten compound raw material is solidified and crystal is grown.

Thereby, sufficient carbon can be added from the solid carbon to the molten compound raw material, and a sufficient carbon concentration can be obtained at the initial growth stage of the semiconductor crystal. In addition, this treatment can stabilize the temperature of the melt of the compound raw material and make the carbon concentration and the impurity concentration in the melt uniform. Further, by this treatment, impurities such as Si (silicon) contained in the compound raw material can be removed by gettering with boron oxide. In general, the raw material synthesized by the HB (horizontal Bridgman) method contains Si of about 1 × 10 ¹⁶ cm ⁻³ as an impurity, but Si in the semiconductor crystal subjected to this treatment contains 1 × It was less than 10 ¹⁵ cm ^{−3 and} below the detection limit of the analyzer. On the other hand, Si exceeding 1 × 10 ¹⁵ cm ⁻³ was detected without this treatment.

  In the above method for producing a group III-V compound semiconductor crystal, the molten compound raw material is preferably held in a molten state for 1 hour or more and 20 hours or less.

  If the holding time is less than 1 hour, the above effect cannot be obtained sufficiently, and if it exceeds 20 hours, the productivity may decrease. The holding time is more preferably 2 hours to 15 hours, and further preferably 3 hours to 10 hours.

  In the above method for producing a group III-V compound semiconductor crystal, preferably, a carbon oxide gas is sealed in advance in an airtight container before the compound raw material is heated and melted.

  Thereby, it is possible to prevent a decrease in the carbon concentration in the semiconductor crystal at the initial growth stage.

  In the above method for producing a group III-V compound semiconductor crystal, preferably, the pressure of the carbon oxide gas preliminarily sealed in the hermetic container before heating and melting the compound raw material is 13.3 Pa (0 .1 Torr) to 6666 Pa (50 Torr).

  When the pressure of the carbon oxide gas at room temperature 25 ° C. is less than 13.3 Pa (0.1 Torr), the above effect cannot be obtained sufficiently, and when it exceeds 6666 Pa (50 Torr), the hermetic container abnormally expands in the latter half of the semiconductor crystal growth there is a possibility. The pressure of the carbon oxide gas at the room temperature of 25 ° C. is more preferably 66.7 Pa (0.5 Torr) or more and 5332 Pa (40 Torr) or less, and further preferably 133.3 Pa (1 Torr) or more and 4000 Pa (30 Torr) or less. .

  In the above method for producing a group III-V compound semiconductor crystal, the crucible is preferably made of pBN (pyrolytic boron nitride).

  Depending on the constituent elements of the crucible, boron oxide and carbon crucible may react to contaminate the raw material melt. Therefore, pBN is optimal as a crucible material that does not react with boron oxide or carbon.

  In the method for producing a group III-V compound semiconductor crystal, preferably, the group III-V compound semiconductor crystal is a GaAs crystal. That is, the present invention is particularly effective as a method for adding carbon to a GaAs crystal.

  The carbon concentration in the semiconductor crystal depends on the moisture concentration of boron oxide and the carbon material (sintered graphite, pyrolytic graphite, glassy carbon or amorphous carbon, diamond, etc.) in addition to the opening area of the lid opening. Also depends.

  According to the method for producing a group III-V compound semiconductor crystal of the present invention, the reproducibility of the carbon concentration in the semiconductor crystal is improved, it is easy to generate a high concentration carbon oxide gas, and monoxide is oxidized from the outside of the furnace. There is no need to supply carbon gas.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a diagram for explaining an example of a method for producing a carbon-added GaAs single crystal according to Embodiment 1 of the present invention. Referring to FIG. 1, first, seed crystal 3, GaAs raw material 4, and boron oxide (B ₂ O ₃ ) 5 are accommodated in crucible 1. The seed crystal 3 is accommodated in the lowermost end portion of the crucible 1, and the GaAs raw material 4 is prepared as a polycrystalline body in which Ga (gallium) and As (arsenic) are pre-synthesized. A lid 2 is placed on the upper end of the crucible 1. An opening 2a is provided on the upper surface of the lid 2, and the solid carbon 6 is disposed above the opening 2a. In the present embodiment, the solid carbon 6 is arranged so as to make the inside of the crucible 1 a semi-sealed space by closing the opening 2a.

  In this state, the crucible 1 and the solid carbon 6 are sealed in an ampoule (airtight container) 7. The ampoule 7 is installed on a vertical furnace support 8 and heated by a heater 9. By this heating, the boron oxide 5, the GaAs raw material 4, and the upper half of the seed crystal 3 are melted. In order to grow single crystal GaAs, the heater 9 generates a temperature gradient so that the upper part is a high temperature region and the lower part is a low temperature region. In this state, the solid-liquid interface in the GaAs raw material 4 moves from the upper end portion (seed end) of the seed crystal 3 to the upper end portion (tail end) of the GaAs raw material 4, so that the GaAs raw material 4 is on the seed crystal 3 side. Solidified from this, solid single crystals grow.

  At the time of the above heating, the boron oxide 5 evaporates in the crucible 1 to generate a gaseous substance (water vapor, oxide gas) resulting from the boron oxide 5. This gaseous substance reacts with the solid carbon 6 to generate carbon oxide gas (mainly carbon monoxide gas). The chemical reaction that produces carbon monoxide gas is thought to be as follows.

C + H ₂ O → CO + H ₂
3C + B ₂ O ₃ → 3CO + 2B
Carbon is supplied from the generated carbon oxide gas to the melt of the GaAs raw material 4 to obtain a GaAs single crystal to which carbon is added.

  In the above, the boron oxide 5 preferably contains moisture. Moreover, it is preferable that the moisture content which the boron oxide 5 contains is 10 mass ppm or more and less than 200 mass ppm.

Moreover, it is preferable that carbon is added to the GaAs raw material 4 before filling the crucible 1. The average carbon concentration added to the GaAs raw material 4 before filling the crucible 1 is preferably 0.5 × 10 ¹⁵ atms · cm ⁻³ or more and 25 × 10 ¹⁵ atms · cm ⁻³ or less.

  Further, it is preferable to hold the molten GaAs raw material 4 in a molten state for a certain period of time before solidifying and crystal growth. Moreover, it is preferable that the time which hold | maintains the molten GaAs raw material 4 in the molten state is 1 hour or more and 20 hours or less.

  Further, it is preferable that a carbon oxide gas is sealed in the ampoule 7 before the GaAs raw material 4 is heated and melted. Moreover, it is preferable that the pressure of the carbon oxide gas previously enclosed in the ampoule 7 before heating and melting the GaAs raw material 4 is 13.3 Pa or more and 6666 Pa or less at a room temperature of 25 ° C.

  The crucible 1 is preferably made of pBN.

  Hereinafter, the function and effect of the present embodiment will be described.

  In the above Patent Document 2, as shown in FIG. 5, the carbon source 66 is disposed at the lowermost part in the ampoule 67, so that the gaseous substance due to the boron oxide 65 moves upward and goes out of the crucible 61. The carbon source 65 cannot be reached unless the direction is changed downward.

  Moreover, in said nonpatent literature 1, as shown in FIG. 6, although the upper end of the crucible 71 is covered with the lid | cover 72, there is no description regarding an opening part. Even if an opening is formed between the lid 72 and the crucible 71, the opening in this case exists on the side surface of the crucible 71 and does not exist on the upper surface of the lid 72. For this reason, in order for the gaseous substance resulting from boron oxide evaporated in the crucible 71 to go out of the crucible 71, the gaseous substance moves upward in the crucible 71 and then toward the side toward the opening. It is necessary to change the direction of movement.

  As described above, in both Patent Document 2 and Non-Patent Document 1, in order for the gaseous substance derived from boron oxide to reach the carbon source, the traveling direction must be changed. Most of the particulate matter will first contact the wall of the ampoule, crucible, lid, etc., and will be concentrated on it, reaching very little the carbon source outside the crucible.

  On the other hand, according to the present embodiment, since the solid carbon 6 is disposed above the opening 2a provided on the upper surface of the lid 2, the gaseous state caused by the boron oxide 5 evaporated in the crucible 1 is obtained. The substance (water vapor, oxide gas) can reach the solid carbon 6 without being obstructed by the crucible 1 or the like. That is, in order for the gaseous substance resulting from the boron oxide 5 evaporated in the crucible 1 to go out of the crucible 1 and reach the solid carbon 6, the gaseous substance only needs to continue to move upward in the crucible 1, There is no need to change the direction of movement.

  For this reason, since the phenomenon that the gaseous substance adheres to the wall surface of the crucible 1 when changing the direction of movement can be suppressed, the gaseous substance can efficiently reach the solid carbon 6. As a result, the gaseous substance derived from boron oxide and the solid carbon 6 can be reacted efficiently, so that a high-concentration carbon oxide gas can be generated without expanding the ampoule 7.

  In addition, since carbon oxide gas with a high concentration can be generated, it is not necessary to supply carbon monoxide harmful to the human body from the outside of the furnace into the furnace, so that carbon monoxide gas control becomes unnecessary.

  Since the crucible 1 is filled with the boron oxide 5, the GaAs raw material 4 melted in the crucible 1 is covered with the boron oxide 5. For this reason, even if the carbon powder falls from the solid carbon 6, this carbon powder falls on the boron oxide 5 and most of the carbon powder floats on the boron oxide 5, so that the carbon powder is melted into the GaAs raw material 4. There is no direct fall. Therefore, contamination of the GaAs raw material 4 can be suppressed, the carbon concentration in the GaAs single crystal can be easily made constant, and the reproducibility of the carbon concentration is improved.

  Moreover, since the amount of the gaseous substance resulting from the boron oxide 5 passing through the opening 2a changes by adjusting the opening area of the opening 2a of the lid 2, the amount of carbon oxide gas generated by the reaction can also be adjusted. Finally, the carbon concentration in the GaAs single crystal can be adjusted.

  Moreover, since the inside of the crucible 1 can be made into a semi-sealed space by the solid carbon 6 closing the opening 2a, the concentration of carbon oxide gas in the space above the boron oxide 5 in the crucible 1 is locally increased. Can do. For this reason, even when the ampule 7 is used, it is possible to generate a higher concentration of carbon oxide gas in the crucible 1 without expanding the ampule 7.

  Boron oxide 5 has an effect of gettering and removing impurities in the GaAs raw material 4. The gallium oxide of Patent Document 1 (page 9, lower left column, 8th to 10th lines) is also used for the same purpose. However, when gallium oxide is used, the oxygen concentration in the GaAs crystal may increase. On the other hand, when boron oxide 5 is used, it has been found that the oxygen concentration in the GaAs single crystal can be kept sufficiently low, and a sufficient effect can be obtained for removing impurities. Furthermore, it has been found that boron oxide 5 on the upper surface of the melt is particularly effective against impurity gas entering from outside such as SiO gas.

(Embodiment 2)
FIG. 2 is a diagram for explaining an example of a method for producing a carbon-added GaAs single crystal according to Embodiment 2 of the present invention. Referring to FIG. 2, the manufacturing method according to the present embodiment is different from the manufacturing method according to the first embodiment described above in that carbon receiver 11 is disposed in crucible 1. The carbon receiver 11 is disposed on the boron oxide 5. The carbon receiver 11 may be supported so as to be suspended from the lid 2 or the crucible 1, or may be configured to float in the melt of boron oxide 5. In addition, the carbon receiver 11 is preferably configured to pass a gaseous substance derived from the boron oxide 5 though no carbon powder is passed therethrough. Thereby, the carbon powder dropped from the solid carbon 1 can be received firmly, and the carbon receiver 11 can be prevented from becoming an obstacle when the gaseous substance moves toward the solid carbon 6.

  Since the configuration and method of the present embodiment other than those described above are substantially the same as the configuration and method of the first embodiment described above, the same components are denoted by the same reference numerals and description thereof is omitted. .

  According to the present embodiment, the same effects as in the first embodiment can be obtained, and the carbon receiver 11 is provided in the crucible 1, so that the carbon powder dropped from the solid carbon 6 falls on the boron oxide 5. Can be prevented. Therefore, contamination of the GaAs raw material 4 can be further suppressed, and it becomes easier to make the carbon concentration in the GaAs single crystal constant, and the reproducibility of the carbon concentration is improved.

(Embodiment 3)
FIG. 3 is a diagram for explaining an example of a method for producing a carbon-added GaAs single crystal according to Embodiment 3 of the present invention. Referring to FIG. 3, the manufacturing method of the present embodiment does not seal crucible 1, solid carbon 6, etc. in ampoule 7 as it is in the pressure chamber as compared with the manufacturing method of the first embodiment described above. 12 is different in that it is disposed within the area 12. For this reason, the crucible 1 and the solid carbon 6 are exposed to the atmosphere in the pressure chamber 12. A gas such as Ar (argon) or N ₂ (nitrogen) is introduced into the pressure chamber 12.

  Since the configuration and method of the present embodiment other than those described above are substantially the same as the configuration and method of the first embodiment described above, the same components are denoted by the same reference numerals and description thereof is omitted. .

The manufacturing method of the present embodiment is effective for a system in which a gas such as Ar or N ₂ is introduced into the pressure chamber 12 and sealed with boron oxide 5 to grow a GaAs single crystal. Almost the same effect can be obtained.

  In the first to third embodiments, the GaAs crystal has been described as the III-V group compound semiconductor crystal. However, the present invention is not limited to this, and other III-V group compound semiconductor crystals can be used. It can also be applied to manufacturing.

  Examples of the present invention will be described below.

  First, a GaAs seed crystal 3 having an orientation <100>, 10 kg of an additive-free GaAs raw material 4, and 100 g of boron oxide 5 having a water content of 85 mass ppm are placed in a pBN crucible 1 shown in FIG. . A lid 2 made of pBN is attached to the upper end of the crucible 1, a graphite disk is placed as solid carbon 6 on the opening 2 a having an opening diameter of φ20 mm (measured value after cooling at room temperature), and the inside of the crucible 1 is half-finished. Keep sealed. In this state, the crucible 1, the solid carbon 6 and the like are hermetically sealed in a quartz ampoule 7 having an inner diameter of 12 cm. This ampoule 7 is placed on a support 8 and installed in a heater 9 provided in the chamber. While adjusting the temperature profile so that the temperature on the seed crystal 3 side is lowered, the temperature of the heater 9 is increased, The GaAs raw material 4 and the upper part of the seed crystal 3 are melted.

  Thereafter, the temperature profile of the heater 9 is adjusted to lower the temperature from the seed crystal 3 side, and the entire GaAs raw material 4 is solidified to grow a single crystal. Then, after the temperature is lowered to room temperature, the quartz ampule 7 is cut open and the GaAs single crystal is separated from the crucible 1.

The carbon concentration in the GaAs single crystal thus obtained is 4.5 × 10 ^{15 to} 5.5 × 10 ¹⁵ cm ⁻³ .

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention can be applied particularly advantageously to a method for producing a group III-V compound semiconductor crystal to which carbon has been added.

It is a figure for demonstrating an example of the manufacturing method of the carbon addition GaAs single crystal in Embodiment 1 of this invention. It is a figure for demonstrating an example of the manufacturing method of the carbon addition GaAs single crystal in Embodiment 2 of this invention. It is a figure for demonstrating an example of the manufacturing method of the carbon addition GaAs single crystal in Embodiment 3 of this invention. 6 is a diagram for explaining a method for producing a carbon-added GaAs single crystal disclosed in Patent Document 1. FIG. 6 is a diagram for explaining a method for producing a carbon-added GaAs single crystal disclosed in Patent Document 2. FIG. It is a figure for demonstrating the manufacturing method of the carbon addition GaAs single crystal disclosed by the nonpatent literature 1. FIG. 6 is a diagram for explaining a method for producing a carbon-added GaAs single crystal disclosed in Non-Patent Document 2. FIG.

Explanation of symbols

  1 crucible, 2 lid, 2a opening, 3 seed crystal, 4 GaAs raw material, 5 boron oxide, 6 solid carbon, 7 ampoule, 8 support base, 9 heater, 12 pressure chamber.

Claims (13)

A method for producing a group III-V compound semiconductor crystal to which carbon has been added,
Filling a crucible with boron oxide containing a pre-synthesized III-V compound raw material and moisture ;
The crucible is formed into a semi-enclosed space by closing the opening above the opening provided on the upper surface of the crucible so that the carbon reacts with the gaseous substance caused by the boron oxide evaporated in the crucible. A step of arranging to
Heating and melting the compound raw material with the solid carbon disposed above the opening; and
And solidifying the molten compound raw material to grow a compound semiconductor crystal to which carbon is added. A method for producing a group III-V compound semiconductor crystal. The boron oxide is characterized by containing a 200 ppm by weight less water than 10 mass ppm, method of producing a group III-V compound semiconductor crystal according to claim 1. The method for producing a group III-V compound semiconductor crystal according to claim 1 or 2 , wherein the molten compound raw material is held in a molten state for a certain period of time before solidifying and crystal growth. The method for producing a III-V group compound semiconductor crystal according to claim 3 , wherein the time for holding the molten compound raw material in a molten state is 1 hour or more and 20 hours or less. The method for producing a group III-V compound semiconductor crystal according to any one of claims 1 to 4 , wherein carbon is added to the compound raw material in advance before filling the crucible into the crucible. The average carbon concentration of the compound raw material before filling the crucible is 0.5 × 10 ¹⁵ atms · cm ^{−3 to} 25 × 10 ¹⁵ atms · cm ^−3. 6. A method for producing a group III-V compound semiconductor crystal according to 5 . Sealing the crucible filled with the compound raw material and the boron oxide and the solid carbon in an airtight container made of a gas-impermeable material in a state where the solid carbon is disposed above the opening. The method for producing a group III-V compound semiconductor crystal according to any one of claims 1 to 6 , further comprising: The method for producing a group III-V compound semiconductor crystal according to claim 7 , wherein carbon oxide gas is sealed in the hermetic container before the compound raw material is heated and melted. The pressure pre-encapsulated by which carbon dioxide gas into the airtight container before heating and melting said compound material is characterized in that at 13.3Pa than 6666Pa less at room temperature 25 ° C., according to claim 8 A method for producing a group III-V compound semiconductor crystal. The step of disposing the solid carbon in the chamber without sealing the crucible filled with the compound raw material and the boron oxide and the solid carbon in a state where the solid carbon is disposed above the opening. The method for producing a group III-V compound semiconductor crystal according to any one of claims 1 to 6 , further comprising: The method for producing a group III-V compound semiconductor crystal according to any one of claims 1 to 10 , wherein a carbon receiver for receiving carbon dropped from the solid carbon is disposed in the crucible. The crucible is characterized in that it consists of pBN, method of producing a group III-V compound semiconductor crystal according to any one of claims 1 to 11. Characterized in that said group III-V compound semiconductor crystal is GaAs crystal, method of producing a group III-V compound semiconductor crystal according to any one of claims 1 to 12.

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