JP4284151B2 - Filter device - Google Patents

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JP4284151B2
JP4284151B2 JP2003364552A JP2003364552A JP4284151B2 JP 4284151 B2 JP4284151 B2 JP 4284151B2 JP 2003364552 A JP2003364552 A JP 2003364552A JP 2003364552 A JP2003364552 A JP 2003364552A JP 4284151 B2 JP4284151 B2 JP 4284151B2
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貴則 久保
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Kyocera Corp
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本発明は、例えば携帯電話や無線LAN等の無線通信機器その他の各種通信機器等において使用されるフィルタ装置に関するものである。   The present invention relates to a filter device used in, for example, a wireless communication device such as a mobile phone and a wireless LAN, and other various communication devices.

近年、携帯電話機等の移動体通信機器等に使用されるフィルタ装置は、移動体通信機器等の薄型化、小型化の要求に伴い、誘電体同軸型共振器を用いたフィルタから分布定数回路を共振器に用いた積層ストリップラインフィルタへと進展してきている。   2. Description of the Related Art In recent years, filter devices used in mobile communication devices such as mobile phones have been distributed from a filter using a dielectric coaxial resonator to meet demands for thinning and miniaturization of mobile communication devices. Progress has been made in laminated stripline filters used in resonators.

そのような従来の積層ストリップラインフィルタとして、特許文献1には、図6に透視斜視図および図7に透視平面図で示す構成のものが提案されている。   As such a conventional multilayer stripline filter, Patent Document 1 proposes a configuration having a perspective view shown in FIG. 6 and a perspective plan view shown in FIG.

図6および図7において、71は第1の誘電体層、72は第1の誘電体層71の上に積層された第2の誘電体層、73は第2の誘電体層72の上に積層された第3の誘電体層、81は第1の誘電体層71の下面に配された第1の接地電極、82は第3の誘電体層73の上面に配された第2の接地電極、83,84は、第1の誘電体層71および第2の誘電体層72の間に配した第1の片端開放矩形状共振電極および第1の片端短絡矩形状共振電極、85,86は、第2の誘電体層72および第3の誘電体層73の間に配した第2の片端開放矩形状共振電極および第2の片端短絡矩形状共振電極である。   6 and 7, reference numeral 71 is a first dielectric layer, 72 is a second dielectric layer laminated on the first dielectric layer 71, and 73 is on the second dielectric layer 72. The laminated third dielectric layer, 81 is a first ground electrode disposed on the lower surface of the first dielectric layer 71, and 82 is a second ground disposed on the upper surface of the third dielectric layer 73. The electrodes 83 and 84 are a first one-end open rectangular resonance electrode and a first one-end short-circuited rectangular resonance electrode 85 and 86 disposed between the first dielectric layer 71 and the second dielectric layer 72, respectively. Are a second one-end open rectangular resonance electrode and a second one-end short-circuited rectangular resonance electrode arranged between the second dielectric layer 72 and the third dielectric layer 73.

第1および第2の片端開放矩形状共振電極83,85は略同一の形状を有し、平面視で平行に、かつ第1の片端開放矩形状共振電極83の一部と第2の片端開放矩形状共振電極85の一部とが第2の誘電体層72を挟んで互いに重なるように配されている。   The first and second one-end open rectangular resonance electrodes 83 and 85 have substantially the same shape, are parallel in plan view, and part of the first one-end open rectangular resonance electrode 83 and the second one-end open. A part of the rectangular resonance electrode 85 is arranged so as to overlap each other with the second dielectric layer 72 interposed therebetween.

また、第1および第2の片端短絡矩形状共振電極84,86は略同一の形状を有し、平面視で平行に、かつ第1の片端短絡矩形状共振電極84の一部と第2の片端短絡矩形状共振電極86の一部とが第2の誘電体層72を挟んで互いに重なるように配されている。   The first and second one-end short-circuited rectangular resonance electrodes 84 and 86 have substantially the same shape, are parallel to each other in plan view, and a part of the first one-end short-circuited rectangular resonance electrode 84 and the second A part of the one-end short-circuited rectangular resonance electrode 86 is arranged to overlap each other with the second dielectric layer 72 interposed therebetween.

さらに、第1の片端開放矩形状共振電極83の開放端90と反対側の端部と、第1の片端短絡矩形状共振電極84の短絡端91と反対側の端部とが電気的に接続され、第2の片端開放矩形状共振電極85の開放端90と反対側の端部と、第2の片端短絡矩形状共振電極86の短絡端91と反対側の端部とが電気的に接続される構成となっていた。なお、図7においては、第1および第2の接地電極81,82の図示は省略している。   Further, the end portion of the first one-end open rectangular resonance electrode 83 opposite to the open end 90 and the end portion of the first one-end short-circuit rectangular resonance electrode 84 opposite to the short-circuit end 91 are electrically connected. The end of the second one-end open rectangular resonant electrode 85 opposite to the open end 90 and the end of the second one-end short-circuited rectangular resonant electrode 86 opposite to the short-circuited end 91 are electrically connected. It became the composition to be. In FIG. 7, the first and second ground electrodes 81 and 82 are not shown.

そして、第1および第2の片端開放矩形状共振電極83,85の幅W1、第1および第2の片端短絡矩形状共振電極84,86の幅W2、第1の片端開放矩形状共振電極83と第2の片端開放矩形状共振電極85とが第2の誘電体層72を挟んで互いに重なる幅W3、ならびに第1の片端短絡矩形状共振電極84と第2の片端短絡矩形状共振電極86とが第2の誘電体層72を挟んで互いに重なる幅W4を調整することにより、第1および第2の片端開放矩形状共振電極83,85間ならびに第1および第2の片端短絡矩形状共振電極84,86間で形成される結合として容量性結合が支配的となる場合は、通過帯域に対して低域側に減衰極を1個有するフィルタ特性を、逆に誘導性結合が支配的となる場合は、通過帯域に対して高域側に減衰極を1個有するフィルタ特性を実現していた。
特開平9−331201号公報
Then, the width W1 of the first and second one-end open rectangular resonance electrodes 83 and 85, the width W2 of the first and second one-end short-circuited rectangular resonance electrodes 84 and 86, and the first one-end open rectangular resonance electrode 83. And the second one-end open rectangular resonance electrode 85 and the second dielectric layer 72 so as to overlap each other, the width W3, and the first one-end short-circuited rectangular resonance electrode 84 and the second one-end short-circuited rectangular resonance electrode 86. By adjusting the width W4 that overlaps each other with the second dielectric layer 72 in between, the first and second one-end open rectangular resonance electrodes 83 and 85 and the first and second one-end short-circuited rectangular resonances When capacitive coupling is dominant as the coupling formed between the electrodes 84 and 86, a filter characteristic having one attenuation pole on the low band side with respect to the pass band is obtained, and conversely, inductive coupling is dominant. If the It was realized filter characteristic having one pole.
JP-A-9-331201

しかしながら、このような従来の積層ストリップラインフィルタにおいては、第1〜第3の誘電体層71〜73を積層する工程において発生する積層ずれにより、第1の片端開放矩形状共振電極83と第2の片端開放矩形状共振電極85とが第2の誘電体層72を挟んで互いに重なる幅W3、ならびに第1の片端短絡矩形状共振電極84と第2の片端短絡矩形状共振電極86とが第2の誘電体層72を挟んで互いに重なる幅W4が変化することにより、第1および第2の片端開放矩形状共振電極83,85間の電磁界結合量、ならびに第1および第2の片端短絡矩形状共振電極間84,86の電磁界結合量が変化し、このため、所望のフィルタ特性に対して減衰極が大きく変動するという問題点があった。   However, in such a conventional multilayer stripline filter, the first one-end open rectangular resonance electrode 83 and the second one are caused by the stacking deviation that occurs in the process of stacking the first to third dielectric layers 71 to 73. The one end open rectangular resonant electrode 85 overlaps with the second dielectric layer 72 and the width W3, and the first one end shorted rectangular resonant electrode 84 and the second one end shorted rectangular resonant electrode 86 are the first. The width W4 that overlaps with each other across the two dielectric layers 72 changes, so that the electromagnetic field coupling amount between the first and second one-end open rectangular resonance electrodes 83 and 85, and the first and second one-end short-circuits The amount of electromagnetic field coupling between the rectangular resonance electrodes 84 and 86 changes, which causes a problem that the attenuation pole varies greatly with respect to the desired filter characteristics.

本発明は上記問題点に鑑みて完成されたものであり、その目的は、複数の誘電体層を積層する工程において発生する積層ずれによるフィルタ特性の減衰極の変動を低減することができるフィルタ装置を提供することにある。   The present invention has been completed in view of the above problems, and an object of the present invention is to provide a filter device that can reduce fluctuations in attenuation poles of filter characteristics due to misalignment caused in a process of laminating a plurality of dielectric layers. Is to provide.

本発明のフィルタ装置は、前記第1および第3の片端開放矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、前記第2および第4の片端開放矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、
前記第1および第3の片端短絡矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、前記第2および第4の片端短絡矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、
前記第1および第2の接地電極は平面視で前記第1〜第4の片端開放矩形状共振電極ならびに前記第1〜第4の片端短絡矩形状共振電極を覆うように配され、
前記第1の片端開放矩形状共振電極の開放端と反対側の端部と、前記第1の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第1の共振器を形成し、
前記第2の片端開放矩形状共振電極の開放端と反対側の端部と、前記第2の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第2の共振器を形成し、
前記第3の片端開放矩形状共振電極の開放端と反対側の端部と、前記第3の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第3の共振器を形成し、
前記第4の片端開放矩形状共振電極の開放端と反対側の端部と、前記第4の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第4の共振器を形成し、
前記第1乃至第4の共振器は、その長さ方向が平行であり、
前記第1および第2の共振器ならびに前記第3および第4の共振器が、前記第1乃至第4の共振器の長さ方向に平行で前記各誘電体層の主面に直交する平面に関して面対称に配置されているとともに、前記第1乃至第4の共振器に夫々第1乃至第4の入出力端子が電気的に接続され、前記第1の入出力端子と前記第2の入出力端子が電気的に接続され、前記第3の入出力端子と前記第4の入出力端子が電気的に接続されていることを特徴とするものである。
Filter apparatus according to the present invention, the first and third one-end open rectangular resonant electrodes, as the second dielectric layer each of the at least a portion sandwiching overlap in plan view, the first, second disposed in parallel in the stacking direction of the third dielectric layer, the second and fourth one-end open rectangular resonant electrodes, so sandwiching the second dielectric layer each of at least some overlap in plan view Are arranged in parallel in the stacking direction of the first to third dielectric layers ,
Wherein the first and third one end shorted rectangular resonant electrodes, the so second dielectric layer each of the at least a portion sandwiching overlap in plan view, the lamination of the first to third dielectric layers disposed in parallel in the direction, the second and fourth one end shorted rectangular resonant electrodes, as across the second dielectric layer each of at least some overlap in plan view, the first, second 3 dielectric layers are arranged in parallel in the stacking direction ,
It said first and second ground electrodes are disposed so as to cover the first to fourth one-end open rectangular resonant electrode and the first to fourth one end shorted rectangular resonator electrode in plan view,
An end portion of the first one-end open rectangular resonance electrode opposite to the open end and an end portion of the first one-end short-circuit rectangular resonance electrode opposite to the short-circuit end are electrically connected to each other. Form a resonator of
An end of the second one-end open rectangular resonance electrode opposite to the open end and an end opposite to the short-circuit end of the second one-end short-circuited rectangular resonance electrode are electrically connected to each other. Form a resonator of
An end of the third one-end open rectangular resonance electrode opposite to the open end and an end opposite to the short-circuit end of the third one-end short-circuited rectangular resonance electrode are electrically connected to form a third. Form a resonator of
An end of the fourth one-end open rectangular resonant electrode opposite to the open end and an end opposite to the short-circuited end of the fourth single-ended short-circuited rectangular resonant electrode are electrically connected to form a fourth. Form a resonator of
The first to fourth resonators have parallel length directions.
With respect to the plane of said first and second resonators and the third and fourth resonator, perpendicular to the main surface of said each dielectric layer in parallel to the first to the length direction of the fourth resonator together are arranged in plane symmetry, the first to fourth respective first to fourth in the resonator of the input and output terminals are electrically connected, said second input and said first output terminal A terminal is electrically connected, and the third input / output terminal and the fourth input / output terminal are electrically connected.

本発明のフィルタ装置は、上記構成において好ましくは、前記各接地電極、または前記各片端短絡矩形状共振電極の前記短絡端および前記各接地電極が、前記誘電体層の内部に形成された貫通導体および側面の少なくとも一方に形成された側面導体により電気的に接続されているものである。   In the filter device according to the present invention, preferably, each ground electrode or each short-circuited end of each short-circuited rectangular resonance electrode and each ground electrode are formed in the dielectric layer in the above-described configuration. And a side conductor formed on at least one of the side surfaces.

本発明のフィルタ装置(第1のフィルタ装置)によれば、第1および第2の共振器ならびに第3および第4の共振器が、第1〜第4の共振器の長さ方向に平行で各誘電体層の主面に直交する平面に関して面対称に配置されていることから、複数の誘電体層を積層する工程において発生する積層ずれが発生した場合でも、第1および第3の共振器間で形成される電磁界結合と第2および第4の共振器間で形成される電磁界結合との増減の割合が一定となる。その結果、第1および第3の共振器間で形成される電磁界結合と第2および第4の共振器間で形成される電磁界結合との増減によるフィルタ特性の減衰極の変動を互いに相殺させることが可能となり、フィルタ特性の減衰極の変動を低減することができる。   According to the filter device (first filter device) of the present invention, the first and second resonators and the third and fourth resonators are parallel to the length direction of the first to fourth resonators. The first and third resonators are arranged in plane symmetry with respect to a plane orthogonal to the main surface of each dielectric layer, so that even when a stacking deviation occurs in the step of stacking a plurality of dielectric layers, The rate of increase / decrease between the electromagnetic field coupling formed between them and the electromagnetic field coupling formed between the second and fourth resonators is constant. As a result, fluctuations in the attenuation pole of the filter characteristics due to increase / decrease in the electromagnetic field coupling formed between the first and third resonators and the electromagnetic field coupling formed between the second and fourth resonators are offset each other. Therefore, the fluctuation of the attenuation pole of the filter characteristic can be reduced.

本発明のフィルタ装置(第2のフィルタ装置)は、各接地電極、または各片端短絡矩形状共振電極の短絡端および各接地電極が、誘電体層の内部に形成された貫通導体および側面の少なくとも一方に形成された側面導体により電気的に接続されている場合、積層された複数の誘電体層の内部に形成するフィルタ装置の設計自由度が向上するとともに、小型で高性能なフィルタ装置を提供することができる。   The filter device of the present invention (second filter device) includes a ground conductor or a short-circuited end of each short-circuited rectangular resonance electrode and each ground electrode at least of a through conductor and a side surface formed inside the dielectric layer. When electrically connected by a side conductor formed on one side, the degree of freedom in designing a filter device formed inside a plurality of stacked dielectric layers is improved, and a small and high-performance filter device is provided. can do.

本発明のフィルタ装置について以下に詳細に説明する。図1は、本発明の実施の形態の一例を示す透視斜視図であり、図2は図1のフィルタ装置を平面視した(積層方向から見た)透視平面図、図3は図2におけるa−a’線断面図である。図1〜図3において、21は第1の誘電体層、22は第1の誘電体層21の上に積層された第2の誘電体層、23は第2の誘電体層22の上に積層された第3の誘電体層、15は第1の誘電体層21の下面に配された第1の接地電極、16は第3の誘電体層23の上面に配された第2の接地電極、31および32はそれぞれ第1および第2の誘電体層21,22の間に配した第1および第2の片端開放矩形状共振電極、41および42はそれぞれ第1および第2の誘電体層21,22の間に配した第1および第2の片端短絡矩形状共振電極、33および34はそれぞれ第2および第3の誘電体層22,23の間に配した第3および第4の片端開放矩形状共振電極、43および44はそれぞれ第2および第3の誘電体層22,23の間に配した第3および第4の片端短絡矩形状共振電極、50は第1〜第4の片端開放矩形状共振電極31〜34のそれぞれの開放端、51は第1〜第4の片端短絡矩形状共振電極41〜44のそれぞれの短絡端である。   The filter device of the present invention will be described in detail below. 1 is a see-through perspective view showing an example of an embodiment of the present invention, FIG. 2 is a see-through plan view of the filter device of FIG. 1 (viewed from the stacking direction), and FIG. 3 is a in FIG. FIG. 1 to 3, reference numeral 21 denotes a first dielectric layer, 22 denotes a second dielectric layer laminated on the first dielectric layer 21, and 23 denotes a second dielectric layer 22. The laminated third dielectric layer, 15 is a first ground electrode disposed on the lower surface of the first dielectric layer 21, and 16 is a second ground disposed on the upper surface of the third dielectric layer. Electrodes 31 and 32 are first and second open-ended rectangular resonant electrodes disposed between first and second dielectric layers 21 and 22, respectively, and 41 and 42 are first and second dielectrics, respectively. First and second one-end short-circuited rectangular resonant electrodes 33 and 34 disposed between the layers 21 and 22, respectively, are third and fourth layers disposed between the second and third dielectric layers 22 and 23, respectively. One-end open rectangular resonance electrodes 43 and 44 are disposed between the second and third dielectric layers 22 and 23, respectively. 3 and fourth one-end short-circuited rectangular resonance electrodes, 50 is an open end of each of the first to fourth one-end open rectangular resonance electrodes 31 to 34, and 51 is a first to fourth one-end short-circuited rectangular resonance electrode 41. It is a short-circuit end of each of -44.

そして、図1〜図3に示すように、第1および第3の片端開放矩形状共振電極31,33は第2の誘電体層22を挟んでそれぞれの少なくとも一部が平面視で重なるように平行に配され、第2および第4の片端開放矩形状共振電極32,34は第2の誘電体層22を挟んでそれぞれの少なくとも一部が平面視で重なるように平行に配されている。また、第1および第3の片端短絡矩形状共振電極41,43は第2の誘電体層22を挟んでそれぞれの少なくとも一部が平面視で重なるように平行に配され、第2および第4の片端短絡矩形状共振電極42,44は第2の誘電体層22を挟んでそれぞれの少なくとも一部が平面視で重なるように平行に配されている。また、第1および第2の接地電極15,16は平面視で第1〜第4の片端開放矩形状共振電極31〜34ならびに第1〜第4の片端短絡矩形状共振電極41〜44を覆うように配されている。   As shown in FIGS. 1 to 3, the first and third one-end open rectangular resonance electrodes 31 and 33 are arranged so that at least a part of each of them overlaps in plan view with the second dielectric layer 22 in between. The second and fourth one-end open rectangular resonance electrodes 32 and 34 are arranged in parallel so that at least a part of each of them overlaps in plan view with the second dielectric layer 22 in between. Further, the first and third one-end short-circuited rectangular resonance electrodes 41 and 43 are arranged in parallel so that at least a part of each of the first and third short-circuited rectangular resonance electrodes 41 and 43 overlap with each other in plan view. These one-end short-circuited rectangular resonance electrodes 42 and 44 are arranged in parallel so that at least a part of each of them overlaps in plan view with the second dielectric layer 22 in between. The first and second ground electrodes 15 and 16 cover the first to fourth one-end open rectangular resonance electrodes 31 to 34 and the first to fourth one-end short-circuited rectangular resonance electrodes 41 to 44 in plan view. Is arranged.

そして、第1の片端開放矩形状共振電極31の開放端50と反対側の端部と、第1の片端短絡矩形状共振電極41の短絡端51と反対側の端部とを電気的に接続して第1の共振器11を形成し、第2の片端開放矩形状共振電極32の開放端50と反対側の端部と、第2の片端短絡矩形状共振電極42の短絡端51と反対側の端部とを電気的に接続して第2の共振器12を形成し、第3の片端開放矩形状共振電極33の開放端50と反対側の端部と、第3の片端短絡矩形状共振電極43の短絡端51と反対側の端部とを電気的に接続して第3の共振器13を形成し、第4の片端開放矩形状共振電極34の開放端50と反対側の端部と、第4の片端短絡矩形状共振電極44の短絡端51と反対側の端部とを電気的に接続して第4の共振器14を形成している。   Then, the end of the first one-end open rectangular resonance electrode 31 opposite to the open end 50 is electrically connected to the end of the first one-end short-circuited rectangular resonance electrode 41 opposite to the short-circuit end 51. Thus, the first resonator 11 is formed, and the end opposite to the open end 50 of the second one-end open rectangular resonant electrode 32 and the short-circuited end 51 of the second single-ended short-circuited rectangular resonant electrode 42 are opposite to each other. The second resonator 12 is formed by electrically connecting the end on the side, the end on the opposite side of the open end 50 of the third one-end open rectangular resonance electrode 33, and the third one-end short-circuited rectangle. The third resonator 13 is formed by electrically connecting the short-circuited end 51 and the opposite end of the shape resonant electrode 43, and is opposite to the open end 50 of the fourth open-ended rectangular resonant electrode 34. The fourth resonator 14 is formed by electrically connecting the end and the end opposite to the short-circuited end 51 of the fourth one-end short-circuited rectangular resonance electrode 44. It is.

そして、さらに、第1および第2の共振器11,12ならびに第3および第4の共振器13,14とが、第1〜第4の共振器11〜14の長さ方向平行で各誘電体層の主面に直交する平面に関して面対称に配置されているとともに、第1〜第4の共振器11〜14にそれぞれ第1〜第4の入出力端子61a,61b,62a,62bが電気的に接続され、第1の入出力端子61aと第2の入出力端子61bが電気的に接続され、第3の入出力端子62aと第4の入出力端子62bが電気的に接続されている。そして、伝送線路を介して外部回路に電気的に接続され、高周波信号が入出力される。   Further, the first and second resonators 11 and 12 and the third and fourth resonators 13 and 14 are parallel to each other in the longitudinal direction of the first to fourth resonators 11 to 14. The first to fourth input / output terminals 61a, 61b, 62a, 62b are electrically connected to the first to fourth resonators 11-14, respectively, with respect to a plane orthogonal to the main surface of the layer. The first input / output terminal 61a and the second input / output terminal 61b are electrically connected, and the third input / output terminal 62a and the fourth input / output terminal 62b are electrically connected. And it is electrically connected to an external circuit via a transmission line, and a high frequency signal is input / output.

このような構成の本発明のフィルタ装置は、第1および第2の接地電極15,16間、または第1および第2の接地電極40,41および第1〜第4の片端短絡矩形状共振電極41〜44の短絡端51を積層方向に電気的に接続する接地接続導体、および接続導体として誘電体層の内部に形成された貫通導体(図示せず)および側面に形成された側面導体の少なくとも一方を用いて構成することにより、3次元的な配線設計が可能となり、積層された複数の誘電体層の内部に形成するフィルタ装置の設計自由度が向上するので、小型で高性能なフィルタ装置となる。   The filter device of the present invention having such a structure is provided between the first and second ground electrodes 15 and 16, or the first and second ground electrodes 40 and 41 and the first to fourth one-end short-circuited rectangular resonance electrodes. At least a ground connection conductor that electrically connects the short-circuit ends 51 of 41 to 44 in the stacking direction, a through conductor (not shown) formed inside the dielectric layer as a connection conductor, and a side conductor formed on the side surface By using one of them, a three-dimensional wiring design is possible, and the degree of freedom in designing a filter device formed inside a plurality of stacked dielectric layers is improved. It becomes.

本発明のフィルタ装置を構成するに当たり、第1〜第3の誘電体層21〜23、第1および第2の接地電極15,16、第1〜第4の片端開放矩形状共振電極31〜34、第1〜第4の片端短絡矩形状共振電極41〜44は、周知の高周波用配線基板に使用される種々の材料,形態のものを使用することができる。   In constructing the filter device of the present invention, the first to third dielectric layers 21 to 23, the first and second ground electrodes 15 and 16, the first to fourth one-end open rectangular resonance electrodes 31 to 34 are provided. The first to fourth one-end short-circuited rectangular resonance electrodes 41 to 44 can be made of various materials and forms used for known high-frequency wiring boards.

本発明のフィルタ装置に用いる第1〜第3の誘電体層21〜23としては、例えばアルミナセラミックス,ムライトセラミックス等のセラミックス材料やガラスセラミックス等の無機系材料、あるいは四ふっ化エチレン樹脂(ポリテトラフルオロエチレン;PTFE),四ふっ化エチレン−エチレン共重合樹脂(テトラフルオロエチレン−エチレン共重合樹脂;ETFE),四ふっ化エチレン−パーフルオロアルコキシエチレン共重合樹脂(テトラフルオロエチレン−パーフルテロアルキルビニルエーテル共重合樹脂;PFA)等のフッ素樹脂やガラスエポキシ樹脂,ポリイミド等の樹脂系材料等が用いられる。これらの材料による第1〜第3の誘電体層21〜23の形状や寸法(厚みや幅,長さ)は、使用される周波数や用途等に応じて設定される。   Examples of the first to third dielectric layers 21 to 23 used in the filter device of the present invention include ceramic materials such as alumina ceramics and mullite ceramics, inorganic materials such as glass ceramics, or ethylene tetrafluoride resin (polytetra PTFE), tetrafluoroethylene-ethylene copolymer resin (tetrafluoroethylene-ethylene copolymer resin; ETFE), tetrafluoroethylene-perfluoroalkoxyethylene copolymer resin (tetrafluoroethylene-perfluteroalkyl vinyl ether) Fluorine resin such as copolymer resin (PFA), glass epoxy resin, resin material such as polyimide, or the like is used. The shapes and dimensions (thickness, width, length) of the first to third dielectric layers 21 to 23 made of these materials are set according to the frequency used, the application, and the like.

本発明のフィルタ装置における第1および第2の接地電極15,16、第1〜第4の片端開放矩形状共振電極31〜34、第1〜第4の片端短絡矩形状共振電極41〜44、貫通導体は、高周波信号伝送用の金属材料の導体層、例えばCu層、Mo−Mnのメタライズ層上にNiメッキ層およびAuメッキ層を被着させたもの、Wのメタライズ層上にNiメッキ層およびAuメッキ層を被着させたもの、Cr−Cu合金層、Cr−Cu合金層上にNiメッキ層およびAuメッキ層を被着させたもの、TaN層上にNi−Cr合金層およびAuメッキ層を被着させたもの、Ti層上にPt層およびAuメッキ層を被着させたもの、またはNi−Cr合金層上にPt層およびAuメッキ層を被着させたもの等を用いて、厚膜印刷法あるいは各種の薄膜形成方法やメッキ法等により形成される。その厚みや幅も、伝送される高周波信号の周波数や用途等に応じて設定される。 First and second ground electrodes 15 and 16, first to fourth one-end open rectangular resonance electrodes 31 to 34, first to fourth one-end short-circuited rectangular resonance electrodes 41 to 44 in the filter device of the present invention, The through conductor is a conductive layer made of a metal material for high-frequency signal transmission, such as a Cu layer, a Mo-Mn metallization layer coated with a Ni plating layer and an Au plating layer, or a W metallization layer with a Ni plating layer. And an Au plated layer deposited thereon, a Cr—Cu alloy layer, a Ni plated layer and an Au plated layer deposited on the Cr—Cu alloy layer, a Ni—Cr alloy layer on the Ta 2 N layer, and Using an Au plating layer, a Ti layer with a Pt layer and an Au plating layer, or a Ni-Cr alloy layer with a Pt layer and an Au plating layer Thick film printing method or each It is formed by a thin film forming method or a plating method or the like. The thickness and width are also set according to the frequency and application of the high-frequency signal transmitted.

本発明のフィルタ装置に用いる第1〜第3の誘電体層21〜23の形成にあたっては、例えば誘電体層がガラスセラミックスから成る場合であれば、まず誘電体層となるガラスセラミックスのグリーンシートを準備し、これに所定の打ち抜き加工を施して貫通導体となる貫通孔を形成した後、スクリーン印刷法によりCu等の導体ペーストを貫通孔に充填するとともに、所定の伝送線路パターンおよびその他の導体層のパターンを印刷塗布する。次に、850〜1000℃で焼成を行ない、最後に外表面に露出している導体層上にNiメッキおよびAuメッキを施す。   In forming the first to third dielectric layers 21 to 23 used in the filter device of the present invention, for example, if the dielectric layer is made of glass ceramics, first, a glass ceramic green sheet to be a dielectric layer is used. After preparing a predetermined punching process to form a through hole to be a through conductor, the through hole is filled with a conductive paste such as Cu by a screen printing method, and a predetermined transmission line pattern and other conductor layers The pattern is printed and applied. Next, baking is performed at 850 to 1000 ° C., and finally Ni plating and Au plating are performed on the conductor layer exposed on the outer surface.

図1〜図3に示す構成の本発明のフィルタ装置ならびに図6および図7に示す従来のフィルタ装置は、同一のフィルタ特性を実現でき、図4はその代表的なフィルタ特性を示したものである。図4において、横軸は周波数(単位:GHz)を、縦軸は挿入損失(単位:dB)を、frは減衰極を表す。   The filter device of the present invention having the configuration shown in FIGS. 1 to 3 and the conventional filter device shown in FIGS. 6 and 7 can realize the same filter characteristics, and FIG. 4 shows typical filter characteristics thereof. is there. In FIG. 4, the horizontal axis represents frequency (unit: GHz), the vertical axis represents insertion loss (unit: dB), and fr represents the attenuation pole.

図5は、図1〜図3に示す構成の本発明のフィルタ装置ならびに図6および図7に示す従来のフィルタ装置の構造モデルを3次元電磁界解析シミュレータで作成し、幅方向の積層ずれ量として±100μmを考慮した場合のシミュレーション結果における減衰極frの変化量を示す各線図(グラフ)である。   FIG. 5 shows a structural model of the filter device of the present invention having the configuration shown in FIGS. 1 to 3 and the conventional filter device shown in FIGS. Are graphs (graphs) showing the amount of change of the attenuation pole fr in the simulation result when ± 100 μm is taken into account.

例えば、図1〜図3に示す構成の本発明のフィルタ装置におけるシミュレーションの場合、第1〜第3の誘電体層21〜22の厚みをそれぞれ0.1〜0.2mm、第1〜第4の片端開放矩形状共振電極31〜34の各共振電極の幅W1と長さL1をそれぞれW1=0.7〜1.4mm、L1=4〜6mm、第1および第3の片端開放矩形状共振電極31,33ならびに第2および第4の片端開放矩形状共振電極32,34が平面視で重なる部分の幅W2をW2=0.4〜0.8mm、第1〜第4の片端短絡矩形状共振電極41〜44の各共振電極の幅W3と長さL2をそれぞれW3=0.7〜1.4mm、L2=4〜6mm、第1および第3の片端短絡矩形状共振電極41,43ならびに第2および第4の片端短絡矩形状共振電極42,44が平面視で重なる部分の幅W4をW4=0.2〜0.4mmとしている。そして、第1および第2の共振器11,12がある面と第3および第4の共振器13,14がある面とが幅方向に積層ずれした量として±100μmを考慮した場合についてシミュレーションを実施した。また、図6および図7に示す従来の平衡型積層ストリップラインフィルタにおいても、同様の構造モデルを3次元電磁界解析シミュレータで作成し、幅方向の積層ずれ量として±100μmを考慮した場合についてシミュレーションを実施した。   For example, in the case of simulation in the filter device of the present invention having the configuration shown in FIGS. 1 to 3, the thicknesses of the first to third dielectric layers 21 to 22 are 0.1 to 0.2 mm and the first to fourth, respectively. The width W1 and the length L1 of each resonance electrode of the one end open rectangular resonance electrodes 31 to 34 are respectively W1 = 0.7 to 1.4 mm, L1 = 4 to 6 mm, and the first and third one end open rectangular resonances. The width W2 of the portion where the electrodes 31 and 33 and the second and fourth one-end open rectangular resonance electrodes 32 and 34 overlap in plan view is W2 = 0.4 to 0.8 mm, and the first to fourth one-end short-circuited rectangular shapes. The width W3 and length L2 of each resonance electrode of the resonance electrodes 41 to 44 are respectively W3 = 0.7 to 1.4 mm, L2 = 4 to 6 mm, the first and third one-end short-circuited rectangular resonance electrodes 41 and 43, and The second and fourth one-end short-circuited rectangular resonance electrodes 42 and 44 are seen in a plan view. The width W4 of the portion that overlaps are the W4 = 0.2~0.4mm. Then, a simulation is performed for a case where ± 100 μm is taken into account as an amount of stacking deviation in the width direction between the surface where the first and second resonators 11 and 12 are present and the surface where the third and fourth resonators 13 and 14 are present. Carried out. Also, in the conventional balanced multilayer stripline filter shown in FIGS. 6 and 7, a similar structural model is created by a three-dimensional electromagnetic field analysis simulator, and simulation is performed in the case where ± 100 μm is taken into account as the stacking misalignment in the width direction. Carried out.

図5において、横軸は幅方向の積層ずれ量(単位:μm)を、縦軸は減衰極frの変化量(単位:GHz)を表し、各特性曲線は、Aが図1〜図3に示す本発明のフィルタ装置における結果を、Bが図6および図7に示す従来のフィルタ装置における結果を示している。   In FIG. 5, the horizontal axis represents the stacking misalignment in the width direction (unit: μm), the vertical axis represents the amount of change in the attenuation pole fr (unit: GHz), and each characteristic curve is shown in FIG. B shows the result in the filter device of the present invention shown, and B shows the result in the conventional filter device shown in FIGS.

図5に示す結果から明らかなように、本発明のフィルタ装置によれば、複数の誘電体層を積層する工程において発生する積層ずれによる、フィルタ特性の減衰極の変動を低減することができる。   As is apparent from the results shown in FIG. 5, according to the filter device of the present invention, it is possible to reduce the fluctuation of the attenuation pole of the filter characteristics due to the stacking deviation that occurs in the step of stacking the plurality of dielectric layers.

例えば、積層ずれ量−100μm,+100μmにおける減衰極frの変化量についてみると、図5のAは衰極frの変化量が0.01GHz、Bは減衰極frの変化量が0.17GHzであり、従来のフィルタ装置における結果Bに比べて、本発明のフィルタ装置における結果Aは、減衰極frの変化量を低減することができることが分かる。   For example, regarding the amount of change in the attenuation pole fr when the stacking shift amount is −100 μm and +100 μm, A in FIG. 5 is 0.01 GHz, and B is 0.17 GHz in the attenuation pole fr. It can be seen that the result A in the filter device of the present invention can reduce the amount of change in the attenuation pole fr compared to the result B in the conventional filter device.

また、本発明のフィルタ装置は、上記構成において好ましくは、第1および第2の接地電極15,16を積層方向に電気的に接続する接地接続導体および第1〜第4の片端短絡矩形状共振電極41〜44の短絡端51を積層方向に電気的に接続する接続導体が誘電体層の内部に形成された貫通導体および側面に形成された側面導体の少なくとも一方であることを特徴とするものであり、これにより、積層された複数の誘電体層の内部に形成するフィルタ装置の設計自由度が向上するとともに、小型で高性能なフィルタ装置となる。   In the filter device according to the present invention, preferably, the first and second ground electrodes 15 and 16 are electrically connected in the stacking direction and the first to fourth one-end short-circuited rectangular resonances in the above configuration. The connection conductor that electrically connects the short-circuit ends 51 of the electrodes 41 to 44 in the stacking direction is at least one of a through conductor formed inside the dielectric layer and a side conductor formed on the side surface. As a result, the degree of freedom in designing a filter device formed inside a plurality of stacked dielectric layers is improved, and a small and high-performance filter device is obtained.

なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更,改良を加えることは何ら差し支えない。   It should be noted that the present invention is not limited to the above embodiments, and various modifications and improvements can be made without departing from the scope of the present invention.

本発明のフィルタ装置の実施の形態の一例を示す透視斜視図である。It is a see-through | perspective perspective view which shows an example of embodiment of the filter apparatus of this invention. 本発明のフィルタ装置の実施の形態の一例を示す透視平面図である。It is a see-through plan view showing an example of an embodiment of a filter device of the present invention. 本発明のフィルタ装置の実施の形態の一例を示す、図2におけるa−a’線断面図である。FIG. 3 is a cross-sectional view taken along the line a-a ′ in FIG. 2, showing an example of the embodiment of the filter device of the present invention. 本発明のフィルタ装置および従来のフィルタ装置における挿入損失の例を示す線図である。It is a diagram which shows the example of the insertion loss in the filter apparatus of this invention, and the conventional filter apparatus. 本発明のフィルタ装置および従来のフィルタ装置における幅方向の積層ずれ量に対する減衰極の変化量の例を示す線図である。It is a diagram which shows the example of the variation | change_quantity of the attenuation pole with respect to the lamination | stacking deviation | shift amount of the width direction in the filter apparatus of this invention, and the conventional filter apparatus. 従来のフィルタ装置の例を示す透視斜視図である。It is a see-through | perspective perspective view which shows the example of the conventional filter apparatus. 従来のフィルタ装置の例を示す断面図である。It is sectional drawing which shows the example of the conventional filter apparatus.

符号の説明Explanation of symbols

11・・・第1の共振器
12・・・第2の共振器
13・・・第3の共振器
14・・・第4の共振器
21・・・第1の誘電体層
22・・・第2の誘電体層
23・・・第3の誘電体層
15・・・第1の接地電極
16・・・第2の接地電極
31・・・第1の片端開放矩形状共振電極
32・・・第2の片端開放矩形状共振電極
33・・・第3の片端開放矩形状共振電極
34・・・第4の片端開放矩形状共振電極
41・・・第1の片端短絡矩形状共振電極
42・・・第2の片端短絡矩形状共振電極
43・・・第3の片端短絡矩形状共振電極
44・・・第4の片端短絡矩形状共振電極
50・・・開放端
51・・・短絡端
61a・・・第1の入出力端子
61b・・・第2の入出力端子
62a・・・第3の入出力端子
62b・・・第4の入出力端子
DESCRIPTION OF SYMBOLS 11 ... 1st resonator 12 ... 2nd resonator 13 ... 3rd resonator 14 ... 4th resonator 21 ... 1st dielectric material layer 22 ... 2nd dielectric layer 23 ... 3rd dielectric layer 15 ... 1st ground electrode 16 ... 2nd ground electrode 31 ... 1st one end open rectangular resonance electrode 32 ... Second open-end rectangular resonance electrode 33 ... Third open-end rectangular resonance electrode 34 ... Fourth open-end rectangular resonance electrode 41 ... First short-cut rectangular resonance electrode 42 2nd single-ended short-circuited rectangular resonant electrode 43 3rd single-ended short-circuited rectangular resonant electrode 44 4th single-ended short-circuited rectangular resonant electrode 50 Open end 51 Short-circuited end 61a ... first input / output terminal 61b ... second input / output terminal 62a ... third input / output terminal 62b ... fourth input / output terminal

Claims (2)

第1の誘電体層と、該第1の誘電体層の上に積層された第2の誘電体層と、該第2の誘電体層の上に積層された第3の誘電体層と、前記第1の誘電体層の下面に配された第1の接地電極と、前記第1および第2の誘電体層の間に配された第1および第2の片端開放矩形状共振電極ならびに第1および第2の片端短絡矩形状共振電極と、前記第2および第3の誘電体層の間に配された第3および第4の片端開放矩形状共振電極ならびに第3および第4の片端短絡矩形状共振電極と、前記第3の誘電体層の上面に配された第2の接地電極とから成り、
前記第1および第3の片端開放矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、前記第2および第4の片端開放矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、
前記第1および第3の片端短絡矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、前記第2および第4の片端短絡矩形状共振電極は前記第2の誘電体層を挟んでそれぞれの少なくとも一部が平面視で重なるように、前記第1乃至第3の誘電体層の積層方向において平行に配され、
前記第1および第2の接地電極は平面視で前記第1〜第4の片端開放矩形状共振電極ならびに前記第1〜第4の片端短絡矩形状共振電極を覆うように配され、
前記第1の片端開放矩形状共振電極の開放端と反対側の端部と、前記第1の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第1の共振器を形成し、
前記第2の片端開放矩形状共振電極の開放端と反対側の端部と、前記第2の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第2の共振器を形成し、
前記第3の片端開放矩形状共振電極の開放端と反対側の端部と、前記第3の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第3の共振器を形成し、
前記第4の片端開放矩形状共振電極の開放端と反対側の端部と、前記第4の片端短絡矩形状共振電極の短絡端と反対側の端部とを電気的に接続して第4の共振器を形成し、
前記第1乃至第4の共振器は、その長さ方向が平行であり、
前記第1および第2の共振器ならびに前記第3および第4の共振器が、前記第1乃至第4の共振器の長さ方向に平行で前記各誘電体層の主面に直交する平面に関して面対称に配置されているとともに、前記第1乃至第4の共振器に夫々第1乃至第4の入出力端子が電気的に接続され、前記第1の入出力端子と前記第2の入出力端子が電気的に接続され、前記第3の入出力端子と前記第4の入出力端子が電気的に接続されていることを特徴とするフィルタ装置。
A first dielectric layer; a second dielectric layer stacked on the first dielectric layer; a third dielectric layer stacked on the second dielectric layer; A first ground electrode disposed on a lower surface of the first dielectric layer; first and second one-end open rectangular resonant electrodes disposed between the first and second dielectric layers; First and second one-end short-circuited rectangular resonant electrodes; third and fourth one-end open rectangular resonant electrodes disposed between the second and third dielectric layers; and third and fourth single-ended short-circuits A rectangular resonance electrode and a second ground electrode disposed on the upper surface of the third dielectric layer;
Wherein the first and third one-end open rectangular resonant electrodes, the so second dielectric layer each of the at least a portion sandwiching overlap in plan view, the lamination of the first to third dielectric layers disposed in parallel in the direction, the second and fourth one-end open rectangular resonant electrodes, as across the second dielectric layer each of at least some overlap in plan view, the first, second 3 dielectric layers are arranged in parallel in the stacking direction ,
Wherein the first and third one end shorted rectangular resonant electrodes, the so second dielectric layer each of the at least a portion sandwiching overlap in plan view, the lamination of the first to third dielectric layers disposed in parallel in the direction, the second and fourth one end shorted rectangular resonant electrodes, as across the second dielectric layer each of at least some overlap in plan view, the first, second 3 dielectric layers are arranged in parallel in the stacking direction ,
It said first and second ground electrodes are disposed so as to cover the first to fourth one-end open rectangular resonant electrode and the first to fourth one end shorted rectangular resonator electrode in plan view,
An end portion of the first one-end open rectangular resonance electrode opposite to the open end and an end portion of the first one-end short-circuit rectangular resonance electrode opposite to the short-circuit end are electrically connected to each other. Form a resonator of
An end of the second one-end open rectangular resonance electrode opposite to the open end and an end opposite to the short-circuit end of the second one-end short-circuited rectangular resonance electrode are electrically connected to each other. Form a resonator of
An end of the third one-end open rectangular resonance electrode opposite to the open end and an end opposite to the short-circuit end of the third one-end short-circuited rectangular resonance electrode are electrically connected to form a third. Form a resonator of
An end of the fourth one-end open rectangular resonant electrode opposite to the open end and an end opposite to the short-circuited end of the fourth single-ended short-circuited rectangular resonant electrode are electrically connected to form a fourth. Form a resonator of
The first to fourth resonators have parallel length directions.
With respect to the plane of said first and second resonators and the third and fourth resonator, perpendicular to the main surface of said each dielectric layer in parallel to the first to the length direction of the fourth resonator together are arranged in plane symmetry, the first to fourth respective first to fourth in the resonator of the input and output terminals are electrically connected, said second input and said first output terminal A filter device, wherein a terminal is electrically connected, and the third input / output terminal and the fourth input / output terminal are electrically connected.
前記各接地電極、または前記各片端短絡矩形状共振電極の前記短絡端および前記各接地電極が、前記誘電体層の内部に形成された貫通導体および側面の少なくとも一方に形成された側面導体により電気的に接続されていることを特徴とする請求項1記載のフィルタ装置。   Each ground electrode or each short-circuited end of each one-sided short-circuited rectangular resonance electrode and each ground electrode are electrically connected by a through conductor formed inside the dielectric layer and a side conductor formed on at least one of the side surfaces. The filter device according to claim 1, wherein the filter device is connected in a mechanical manner.
JP2003364552A 2003-10-24 2003-10-24 Filter device Expired - Fee Related JP4284151B2 (en)

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