JP4274313B2 - Film forming substrate for large pellicle and method for producing large pellicle film - Google Patents

Film forming substrate for large pellicle and method for producing large pellicle film Download PDF

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Publication number
JP4274313B2
JP4274313B2 JP2003160475A JP2003160475A JP4274313B2 JP 4274313 B2 JP4274313 B2 JP 4274313B2 JP 2003160475 A JP2003160475 A JP 2003160475A JP 2003160475 A JP2003160475 A JP 2003160475A JP 4274313 B2 JP4274313 B2 JP 4274313B2
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Prior art keywords
film
pellicle
substrate
pellicle film
forming substrate
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JP2004361704A (en
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芳真 栗山
泰之 阿部
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Asahi Kasei EMD Corp
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Asahi Kasei EMD Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、ペリクルの面積が1,000cm以上の大型ペリクル膜を製造する際に用いられる1,600cm以上の面積を持った成膜基板及びこの成膜基板を用いて大型ペリクルを製造する方法に係り、特に大型ペリクル膜を製造する際に、該成膜基板に静電気が発生して塵埃が付着することを防止可能とした大型ペリクル用成膜基板及び大型ペリクル膜の製造方法に関するものである。
【0002】
【従来の技術】
従来のペリクル膜を製造する方法或はペリクル膜の製造に使用される成膜基板に関する技術としては、例えば後述の特許文献1、特許文献2、特許文献3、特許文献4等が知られている。
【0003】
後述の特許文献1には、回転塗布方法を用いて表面が平滑なガラス、プラスチック等の基材上に水溶性のゾル−ゲル変換が可能な材料をゾル状態で塗布しゲル化させてなる分離膜上に、さらに回転塗布方法を用いてフォトマスク用保護膜材料を所望の膜厚となるように塗布した後、該分離膜材料のゲル化温度以上の温水中に浸漬することにより該分離膜のゾル−ゲル変換を促し、最上部のフォトマスク用保護膜を温水中に浮上させ、次いで所望の形状及び厚みを有するフレームにより該フォトマスク用保護膜を温水中からすくい上げ、加熱、乾燥することにより良好な被膜を形成することを特徴とする高精度パターン板用保護膜の製造方法が詳細に記載されている。
【0004】
また、後記特許文献2には、溶液キャスト法によりニトロセルロース薄膜を平滑板上に形成せしめ、該薄膜にフレームを接着せしめた後、水中に浸して薄膜を剥離し、次いで乾燥することを特徴とするフォトマスク用防塵カバーの製造方法が記載されている。
【0005】
かつ、後記特許文献3には、ベースポリマー層に異種のポリマー薄膜にを固着させ、該ポリマー薄膜に枠を接着した後、該薄膜を溶解せず、ベースポリマーを溶解する溶剤を用いて、ベースポリマー層を溶解、除去することを特徴とする枠に接着固定されたポリマー薄膜の製造方法が記載されている。
【0006】
後記特許文献4には、ペリクル膜を製造するに当っては、ペリクル膜の製膜する基板の表側成膜面にクロム又はクロム合金をコーティングすることによって、基板の表面に極めて平滑な面を形成し、その平滑面に成膜したペリクルの薄膜を抵抗を少なくスムーズに剥離することが出来るようにし、ペリクル膜にのび、しわ、きず、破れ等が発生することを防止するようにした技術が記載されている。
【0007】
さらに、後記特許文献5には、特にペリクル膜の成膜用基板に、シリコンまたはSiC−Siを使用し、体積抵抗率が10Ω・cm以上のような体積抵抗率の高いペリクル膜を成膜する際に用いる成膜用基板を、体積抵抗率が10Ω・cm以下のものとし、これによって基板上に成膜された膜を剥離する際に基板と膜との間で発生する静電気を低く抑えることができ、膜が基板に引きつけられる力を弱くし、したがって膜を剥離するときの膜のしわ、破れが発生することを防止するようにした技術である。
【0008】
【特許文献1】
特開昭59−182730号公報
【特許文献2】
特開昭60−35733号公報
【特許文献3】
特開昭60−38130号公報
【特許文献4】
特開平2−134634号公報
【特許文献5】
特許第2938709号公報
【0009】
【発明が解決しようとする課題】
前述の特許文献1乃至特許文献5の中で、比較的本発明に類似する技術としては、前述の特許文献4及び特許文献5の技術が知られている。即ち、特許文献4の技術に於ては、ペリクル膜を製膜する際に使用される成膜用基板の表面にクロム又はクロム合金をコーティングする点で、本発明にある程度類似している。
【0010】
また、特許文献5に於ては、シリコン等の特定の成膜用基板を用いて、その成膜用基板の表面の体積抵抗率を一定の範囲以下にし、これによって、成膜用基板上に成形されたペリクル膜を剥離するときに両者間に発生する静電気を小さくし、前記成膜用基板にペリクル膜が引きつけられることを防止しているが、前述のように発生する静電気を小さくする点では、本発明にある程度類似している。
【0011】
しかし、前述の特許文献4に於ては、成膜用基板の表面にクロム又はクロム合金のコーティングを施す点で本発明と類似する点はあるが、本発明は成膜用基板の裏面にクロム等をコーティングするのに対し、特許文献4の技術では、成膜用基板の表面にクロム等をコーティングしており、この点で両者は全く異なっている。また、この技術には本発明のように成膜用基板に導電性を与え、かつ、成膜用基板にイオン化エアーを吹き付けて、成膜用基板の静電気を除去して、成膜用基板に塵埃が付着することを防止しようとする技術思想は全く存在乃至開示されていない。さらに、特許文献4に於ては、成膜用基板の表面側にクロム又はクロム合金がコーティングされているので、ペリクル膜を製造した後処理として、この表面を研磨すると、コーティングされたクロム又はクロム合金の表面が徐々に研削されるので、成膜用基板の表面側に再度クロム又はクロム合金のコーティングを施さなければならず、コスト高になる問題があった。
【0012】
また、前述の特許文献5に於ては、成膜用基板上に成形されたペリクル膜を剥離する際に発生する静電気を小さくする点で本発明と類似する点はあるが、この技術に於ては、本発明のように成膜用基板に導電性を与え、イオン化エアーを吹き付けることによって成膜用基板の静電気を除電して、成膜用基板に塵埃が付着することを防止しようとする技術思想は全く存在乃至開示されていない。さらに、特許文献5の技術では、本発明のように成膜用基板の静電気をほぼ完全に除去することは出来ない等の問題があった。
【0013】
大型ペリクルは、半導体用ペリクルに比較して膜厚が厚いため、剥離中にシワが入ったり、破れたりすることは無い。また、膜強度が強いため剥離時に付着した異物も半導体用ペリクルより強いエアーブローを行うことで除去できる。むしろ大型ペリクルで均一な膜をつくる点で問題になるのは、剥離時に発生した静電気によって異物が成膜用基板に付着することである。この成膜用基板に異物が付着した状態で成幕を行うと膜中に異物が埋め込まれ、剥離後のエアーブローではこれ等の異物を大型のペリクル膜から除去できなくなる問題があった。
【0014】
従来の半導体用ペリクル成膜用基板では、サイズが小さいため成膜投入前に基板検査を充分に行うことが出来るが、大型ペリクルの成膜用基板では実質的に無理である。また、この問題を解決するために、大型ペリクル膜の成膜前に成膜用基板を充分に時間を掛けて洗浄することも考えられるが、実際には使用する純水量、洗浄液量、硫酸量等が非常に多くなること、設備がとても大きくなることから現実的ではない問題があった。従って、大型ペリクルでは剥離時に静電気によって成膜用基板上に異物が付着しないことが一番に重要であることが判明した。
【0015】
本発明者等は、前述の従来の多くの問題に鑑み、長年に亘って種々の実験を重ねた結果、大型ペリクルの成膜用基板の剥離帯電を早期に緩和するためには、少なくとも成膜用基板に導電性処理を施すことに効果があることを発見した。かつ、大型ペリクル膜を製造する際に、成膜用基板の表面に剥離環境中のイオン化エアーを吹き付けることによって、該成膜用基板の帯電を緩和しようとしても、成膜用基板の裏面が帯電していると、その成膜用基板の表面側の帯電の緩和速度が遅いことも明らかになった。
【0016】
そして、成膜用基板の裏面にのみ導電性処理を行うことによって、該成膜用基板の表面の帯電が著しく緩和されることも判明した。大型ペリクル膜を製造する際に使用される成膜用基板は、前述のように、連続して大型ペリクル膜を製造するためには、その表面を時々研磨することによって微細な傷を完全に除去する必要があった。
【0017】
しかし、成膜用基板の表面は研磨処理を終了した都度に、導電性の処理を施すことは、作業上実用的でないので、成膜用基板の裏面のみに導電性処理を施すことによって、前述のような効果が得られることは、実務上に於て極めて効果的であることも明らかとなった。また、成膜用基板の材料としては、大型ガラス板を使用することが比較的表面に傷が付きにくく、かつ表面の研磨処理が容易であり、大型ペリクル膜の成膜性に優れていることも判明した。
【0018】
本発明は、以上の多くの解明した新しい技術を総合することによって発明したものであって、特に、大型のペリクル膜を製膜し得る成膜用基板となる大型のガラス板の裏面に導電性処理を施し、これによって成膜用基板に製膜された大型ペリクル膜を剥離する際に発生する静電気を除去するようにした全く新規な技術を提供するものである。
【0019】
【課題を解決するための手段】
本発明に係る大型ペリクル用成膜基板及び大型ペリクル膜の製造方法は、前述の従来の問題点を根本的に改善した発明であって、その大型ペリクル用成膜基板の第1発明の要旨は、大型ペリクル膜を製造する際に使用される成膜基板に於て、大型のガラス板の裏面に導電性処理を施して成膜基板を構成することを特徴とした大型ペリクル用成膜基板である。
【0020】
前述の第1発明に於ては、大型のガラス板の裏面に導電性処理をして大型ペリクル用成膜基板を構成したので、この大型ペリクルを製造する際に、成膜基板の表面に発生する帯電を著しく緩和することが出来、これによって大型ペリクル用成膜基板の表面に塵埃が付着することを防止出来る。
【0021】
また、大型ペリクル用成膜基板の材質を大型ガラス板としたので、表面に傷が簡単に付くことを防止し、かつ研磨作業も容易で、しかも大型ペリクル膜の成膜性能が良い。さらに、大型ペリクル用成膜基板の裏面のみに導電性処理が施されているので、導電性処理を行った面は、研磨する必要がなく、そのまま長く使用することが出来る。
【0022】
本発明に係る大型ペリクル用成膜基板の第2発明の要旨は、前記大型ガラス板の裏面全面に、クロム、クロム酸化物、或はクロム合金による導電性処理を施して構成することを特徴とした請求項1の大型ペリクル用成膜基板である。
【0023】
前述の第2発明に於ては、大型ガラス板の裏面全面に、クロム、クロム酸化物或はクロム合金により導電性処理を施すようにしたので、クロム、クロム酸化物或はクロム合金をコーティング方式でガラス板に塗着することによって簡単に導電性処理をすることが出来る。また、クロム、クロム酸化物或はクロム合金で導電性処理することによって導電性の性能を効率良く高めることが出来る。
【0024】
本発明に係る大型ペリクル膜の製造方法の発明の要旨は、裏面にクロム、クロム酸化物或はクロム合金によって導電性処理が施された大型ガラス板よりなる大型ペリクル用成膜基板の表面の塵埃を除去した後、ペリクル膜成形材料を所望の膜厚となるように塗布してペリクル膜を成形し、かつ前記大型ペリクル用成膜基板の表面より該ペリクル膜を剥離して製造することを特徴とした大型ペリクル膜の製造方法である。
【0025】
前述の大型ペリクル膜の製造方法の発明に於ては、裏面にクロム、クロム酸化物、或はクロム合金によって導電性処理が施された大型ガラス板を大型ペリクル用成膜基板として、この表面のペリクル膜の剥離の際に付着した塵埃を除去した後で、ペリクル膜成形材料を所望の膜厚となるように塗布してペリクル膜を成形すると共に、大型ペリクル用成膜基板よりペリクル膜を剥離して製造するので、ペリクル膜を効率良く製造することが出来る。特に、本発明の方法を実施することによって、ペリクル膜を剥離する際に大型ペリクル用成膜基板の表面に静電気が発生して付着した塵埃を効果的に除去することが出来る。
【0026】
【発明の実施の形態】
本発明に係る大型ペリクル用成膜基板及び大型ペリクル膜の製造方法の一実施例を具体的に説明すると、図1は本発明に係る大型ペリクル用成膜基板の縦断面説明図、図2は図1の大型ペリクル用成膜基板の表面にペリクル膜を成形する状態の縦断面説明図、図3は図2のペリクル膜を大型ペリクル用成膜基板より剥離する状態の縦断面説明図である。
【0027】
図1乃至図3に於て、1は本発明に係る大型ペリクル用成膜基板であって、大型のガラス板2の裏面にクロムを所定の厚さにコーティングして導電層3を積層することによって構成されている。
【0028】
前記大型ペリクル用成膜基板1には、1,600cm以上の面積を有し、かつ肉厚が2〜15mm厚の大型のガラス板2が基材として使用されている。また、このガラス板2にはクロムをコーティングして形成された0.01μm〜1μmミクロン厚の導電層3が積層されている。前記実施例に於ては、導電層3の形成に当って、クロムを使用したが、クロムの他に、クロム酸化物或はクロム合金を使用することが出来る。
【0029】
上記ガラス板2にクロム又はクロム合金等をコーティングする方法としては、真空蒸着、スパッタリング、イオンプレーティング、メッキ等の支持体の裏面をクロム又はクロム合金で均一に覆う方法を用いることが出来る。
【0030】
本発明に係る大型ペリクル用成膜基板1は、前述のようにガラス板2の裏面に導電層3が積層されているので、大型ペリクル用成膜基板1の表面に帯電している静電気を著しく緩和することが出来、これによって静電気の作用によって大型ペリクル用成膜基板1の表面に付着した塵埃を効果的に除去することが出来る。
【0031】
従って、図3に示すように大型ペリクル用成膜基板1の表面にセルロースエステル等の膜材料を塗布して大型のペリクル膜4を成膜し、さらにこのペリクル膜4を大型ペリクル用成膜基板1の表面より剥離した際に、大型ペリクル用成膜基板1の表面に発生する静電気及びこの静電気の影響によって付着する塵埃を容易に除去することが出来る。
【0032】
前述の実施例に於ては、ペリクル膜4の膜材料としてセルロースエステルを使用したが、その他にポリビニルプロビオナール、ポリビニルブチラール、酢酸セルロース、ポリエチレンテレフタレート、ポリプロピレン、バリレン、ポリメチルメタクリレー等が夫々使用することが出来る。これ等の膜材料は、スピンコータ等を用いて回転塗布することによって、ガラス板2の表面に所望の肉厚に成膜することが出来る。
【0033】
前述の構造を有する大型ペリクル用成膜基板1を用いて、大型のペリクル膜4を製造する方法の一例を説明すると、前記図1乃至図3に示す如く、大型ペリクル用成膜基板1の表面にセルロースエステルよりなる膜材料4aを溶液吐出ノズル5より滴下すると共に、大型ペリクル用成膜基板1をスピンコータ等を用いて回転軸6を中心に回転させながら、大型ペリクル用成膜基板1の表面にペリクル膜4を成膜する。
【0034】
大型ペリクル用成膜基板1の表面にペリクル膜4が完全に成膜された後で、大型ペリクル用成膜基板1を移動して剥離ステージ7の上に載置する。続いて、該ペリクル膜4の表面にペリクル膜4を剥離するために使用される仮枠(図示せず)を粘着固定し、この状態で仮枠と共にペリクル膜4の片側面を徐々に上昇させ、ペリクル膜4を大型ペリクル用成膜基板1の表面より剥離する。ペリクル膜4の剥離が完了した後で、ペリクル膜4を剥離する際に発生する静電気を緩和すると共に、静電気の影響によって付着した塵埃を除去することが出来る。
【0035】
【発明の効果】
本発明に係る大型ペリクル用成膜基板に於ては、大型のガラス板の裏面に導電性処理をして大型ペリクル用成膜基板を構成したので、この大型ペリクル用成膜基板を製造する際に、成膜基板の表面に発生する帯電を著しく緩和することが出来る効果があり、これによって大型ペリクル用成膜基板の表面に塵埃が付着することを防止出来る効果を有している。
【0036】
また、大型ペリクル用成膜基板の材質を大型ガラス板としたので、表面に傷が簡単に付くことを防止し、かつ研磨作業も容易で、しかも大型ペリクル膜の成膜性能が良い。さらに、大型ペリクル用成膜基板の裏面のみに導電性処理が施されているので、導電性処理を行った面は、研磨する必要がなく、そのまま長く使用することが出来る効果も有している。
【0037】
また本発明に於いて、大型ガラス板の裏面全面に、クロム、クロム酸化物或はクロム合金により導電性処理を施すようにした場合には、クロム、クロム酸化物或はクロム合金をコーティング方式でガラス板に塗着することによって簡単に導電性処理をすることが出来る効果を有している。また、クロム、クロム酸化物或はクロム合金で導電性処理することによって導電性の性能を効率良く高めることが出来る効果もある。
【0038】
本発明に係る大型ペリクル膜の製造方法に於ては、裏面にクロム、クロム酸化物、或はクロム合金によって導電性処理が施された大型ガラス板を大型ペリクル用成膜基板として、前工程のペリクル膜の剥離の際に付着した塵埃を除去した後で、ペリクル膜成形材料を所望の膜厚となるように塗布してペリクル膜を成形すると共に、大型ペリクル用成膜基板の表面よりペリクル膜を剥離して製造するので、ペリクル膜を効率良く製造することが出来る効果がある。特に、本発明の方法を実施することによって、ペリクル膜を剥離する際に大型ペリクル用成膜基板の表面に静電気が発生して付着した塵埃を効果的に除去することが出来る効果を有している。
【図面の簡単な説明】
【図1】本発明に係る大型ペリクル用成膜基板の縦断面説明図である。
【図2】図1の大型ペリクル用成膜基板の表面にペリクル膜を成形する状態の縦断面説明図である。
【図3】図2のペリクル膜を大型ペリクル用成膜基板より剥離する状態の縦断面説明図である。
【符号の説明】
1 …大型ペリクル用成膜基板
2 …ガラス板
3 …導電層
4 …ペリクル膜
4a …膜材料
5 …溶液吐出ノズル
6 …回転軸
7 …剥離ステージ
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film formation substrate having an area of 1,600 cm 2 or more used for manufacturing a large pellicle film having a pellicle area of 1,000 cm 2 or more, and a large pellicle using the film formation substrate. In particular, the present invention relates to a film forming substrate for a large pellicle and a method for manufacturing a large pellicle film that can prevent static electricity from being generated and dust adhering to the film forming substrate when manufacturing a large pellicle film. is there.
[0002]
[Prior art]
As a conventional method for manufacturing a pellicle film or a technique related to a film formation substrate used for manufacturing a pellicle film, for example, Patent Document 1, Patent Document 2, Patent Document 3, and Patent Document 4 described below are known. .
[0003]
In Patent Document 1 to be described later, separation is performed by applying a water-soluble sol-gel-convertable material in a sol state on a substrate such as glass or plastic having a smooth surface using a spin coating method and gelling. The separation membrane is further coated on the membrane using a spin coating method so that the protective film material for the photomask has a desired thickness, and then immersed in warm water at a temperature equal to or higher than the gelation temperature of the separation membrane material. Sol-gel conversion is promoted, the uppermost photomask protective film is floated in warm water, and then the photomask protective film is scooped up from the warm water by a frame having a desired shape and thickness, and heated and dried. Describes a method for producing a protective film for a high-precision pattern board, which is characterized by forming a better film.
[0004]
Further, Patent Document 2 described below is characterized in that a nitrocellulose thin film is formed on a smooth plate by a solution casting method, a frame is adhered to the thin film, then immersed in water to peel the thin film, and then dried. A method for manufacturing a dustproof cover for a photomask is described.
[0005]
In Patent Document 3 described later, a base material layer is fixed to a different polymer thin film, a frame is bonded to the polymer thin film, and then the base polymer layer is dissolved without dissolving the thin film. A method for producing a polymer thin film adhered and fixed to a frame, characterized by dissolving and removing the polymer layer is described.
[0006]
In Patent Document 4 to be described later, when manufacturing a pellicle film, a very smooth surface is formed on the surface of the substrate by coating the front side film-forming surface of the substrate on which the pellicle film is formed with chromium or a chromium alloy. In addition, it describes a technology that enables the thin film of the pellicle formed on the smooth surface to be peeled off with less resistance and prevents the pellicle film from spreading, wrinkling, scratching, tearing, etc. Has been.
[0007]
Further, in Patent Document 5 described later, a pellicle film having a high volume resistivity such as a volume resistivity of 10 5 Ω · cm or more is formed using silicon or SiC-Si for the substrate for forming the pellicle film. The film formation substrate used for film formation has a volume resistivity of 10 3 Ω · cm or less, and static electricity generated between the substrate and the film when the film formed on the substrate is peeled off. Is a technique in which the force that the film is attracted to the substrate is weakened, and therefore wrinkling and tearing of the film when peeling the film are prevented.
[0008]
[Patent Document 1]
JP 59-182730 A [Patent Document 2]
JP-A-60-35733 [Patent Document 3]
Japanese Patent Laid-Open No. 60-38130 [Patent Document 4]
JP-A-2-134634 [Patent Document 5]
Japanese Patent No. 2938709 [0009]
[Problems to be solved by the invention]
Among the aforementioned Patent Documents 1 to 5, as the techniques that are relatively similar to the present invention, the techniques of the aforementioned Patent Document 4 and Patent Document 5 are known. That is, the technique of Patent Document 4 is somewhat similar to the present invention in that chromium or a chromium alloy is coated on the surface of a film formation substrate used when forming a pellicle film.
[0010]
Further, in Patent Document 5, a specific film-forming substrate such as silicon is used, and the volume resistivity of the surface of the film-forming substrate is set within a certain range. Static electricity generated between the two when the molded pellicle film is peeled is reduced to prevent the pellicle film from being attracted to the film formation substrate, but the generated static electricity is reduced as described above. Now it is somewhat similar to the present invention.
[0011]
However, in the above-mentioned Patent Document 4, there is a similar point to the present invention in that the surface of the film-forming substrate is coated with chromium or a chromium alloy. In contrast, in the technique of Patent Document 4, the surface of the film-forming substrate is coated with chromium or the like, and the two are completely different in this respect. In addition, in this technique, as in the present invention, conductivity is imparted to the film formation substrate, and ionized air is blown onto the film formation substrate to remove static electricity from the film formation substrate. There is no disclosure or disclosure of a technical idea for preventing dust from adhering. Further, in Patent Document 4, chromium or a chromium alloy is coated on the surface side of the film formation substrate. Therefore, when this surface is polished as a post-treatment after manufacturing the pellicle film, the coated chromium or chromium is coated. Since the surface of the alloy is gradually ground, the surface of the film-forming substrate must be coated again with chromium or a chromium alloy, resulting in a problem of high costs.
[0012]
In the above-mentioned Patent Document 5, there is a point similar to the present invention in that static electricity generated when the pellicle film formed on the film formation substrate is peeled is reduced. Thus, as in the present invention, the film-forming substrate is made conductive, and ionized air is blown to remove static electricity from the film-forming substrate, thereby preventing dust from adhering to the film-forming substrate. No technical idea exists or is disclosed. Further, the technique of Patent Document 5 has a problem that the static electricity of the film formation substrate cannot be removed almost completely as in the present invention.
[0013]
Large pellicles are thicker than semiconductor pellicles, so that they do not wrinkle or tear during peeling. In addition, since the film strength is strong, foreign matter adhering at the time of peeling can be removed by air blowing stronger than the pellicle for semiconductor. Rather, a problem in that a uniform film is formed with a large pellicle is that foreign matter adheres to the film formation substrate due to static electricity generated during peeling. When the curtain is formed with foreign matter adhering to the film forming substrate, the foreign matter is embedded in the film, and there is a problem that the air blow after peeling cannot remove the foreign matter from the large pellicle film.
[0014]
A conventional pellicle film formation substrate for semiconductors is small in size, so that the substrate can be sufficiently inspected before film formation, but this is substantially impossible with a large pellicle film formation substrate. In order to solve this problem, it may be possible to clean the film-forming substrate by taking a sufficient amount of time before forming the large pellicle film. In practice, however, the amount of pure water, the amount of cleaning liquid, the amount of sulfuric acid used There was a problem that was not realistic because of the large number of devices and the equipment. Accordingly, it has been found that it is most important for a large pellicle that no foreign matter adheres to the film formation substrate due to static electricity during peeling.
[0015]
The present inventors have conducted various experiments over many years in view of the above-described conventional problems. As a result, in order to alleviate the peeling charge of the large pellicle film formation substrate at an early stage, at least the film formation is performed. It has been found that there is an effect in applying a conductive treatment to a substrate for use. In addition, when manufacturing a large pellicle film, the back surface of the film-forming substrate is charged even if an attempt is made to mitigate the charge of the film-forming substrate by blowing ionized air in the peeling environment onto the surface of the film-forming substrate. As a result, it became clear that the charge relaxation rate on the surface side of the film-forming substrate was slow.
[0016]
It has also been found that by conducting the conductive treatment only on the back surface of the film formation substrate, the charging of the surface of the film formation substrate is remarkably relieved. As described above, the substrate for film formation used when manufacturing large pellicle films is used to continuously remove large scratches by polishing the surface occasionally in order to manufacture large pellicle films. There was a need to do.
[0017]
However, it is impractical to perform the conductive treatment on the surface of the film formation substrate every time the polishing process is finished. It has also been clarified that such an effect is extremely effective in practice. In addition, the use of a large glass plate as a material for the substrate for film formation is relatively easy to scratch the surface, and the surface can be easily polished. Also turned out.
[0018]
The present invention has been invented by integrating many of the above-described new technologies, and in particular, it is conductive on the back surface of a large glass plate that serves as a film-forming substrate capable of forming a large pellicle film. The present invention provides a completely new technique for removing static electricity generated when a large pellicle film formed on a film-forming substrate is peeled off.
[0019]
[Means for Solving the Problems]
The film forming substrate for a large pellicle and the method for producing the large pellicle film according to the present invention are inventions that fundamentally improve the above-mentioned conventional problems, and the gist of the first invention of the film forming substrate for the large pellicle is as follows. A film forming substrate for use in manufacturing a large pellicle film, wherein the film forming substrate is formed by conducting a conductive treatment on the back surface of a large glass plate. is there.
[0020]
In the first invention described above, a conductive substrate is formed on the back surface of a large glass plate to form a large pellicle film formation substrate. Therefore, when this large pellicle is manufactured, it is generated on the surface of the film formation substrate. Therefore, it is possible to remarkably reduce the electrification, thereby preventing dust from adhering to the surface of the large-sized pellicle deposition substrate.
[0021]
In addition, since the material for the large-sized pellicle film formation substrate is a large glass plate, it is possible to prevent the surface from being easily scratched, and the polishing operation is easy, and the film formation performance of the large-scale pellicle film is good. Furthermore, since the conductive treatment is performed only on the back surface of the large-sized pellicle film formation substrate, the surface subjected to the conductive treatment does not need to be polished and can be used for a long time.
[0022]
The gist of the second invention of the film forming substrate for a large pellicle according to the present invention is characterized in that the entire back surface of the large glass plate is subjected to a conductive treatment with chromium, chromium oxide or chromium alloy. The film forming substrate for a large pellicle according to claim 1.
[0023]
In the above-mentioned second invention, the entire back surface of the large glass plate is subjected to the conductive treatment with chromium, chromium oxide or chromium alloy, so that the coating system is made of chromium, chromium oxide or chromium alloy. The conductive treatment can be easily performed by coating on a glass plate. Further, the conductive performance can be efficiently improved by conducting the conductive treatment with chromium, chromium oxide or chromium alloy.
[0024]
The gist of the method for producing a large pellicle film according to the present invention is that dust on the surface of a film forming substrate for a large pellicle comprising a large glass plate whose back surface is subjected to a conductive treatment with chromium, chromium oxide or chromium alloy After removing the pellicle film, a pellicle film molding material is applied so as to have a desired film thickness to form a pellicle film, and the pellicle film is peeled off from the surface of the large-sized pellicle film formation substrate. This is a method for producing a large pellicle film.
[0025]
In the invention of the method for producing a large pellicle film described above, a large glass plate whose back surface is subjected to conductive treatment with chromium, chromium oxide, or chromium alloy is used as a film substrate for large pellicle. After removing dust adhering during peeling of the pellicle film, the pellicle film molding material is applied to the desired film thickness to form the pellicle film, and the pellicle film is peeled off from the large pellicle film formation substrate. Therefore, the pellicle film can be efficiently manufactured. In particular, by carrying out the method of the present invention, when the pellicle film is peeled off, dust generated due to static electricity generated on the surface of the large pellicle film formation substrate can be effectively removed.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of a method for producing a large pellicle film forming substrate and a large pellicle film according to the present invention will be described in detail. FIG. 1 is a longitudinal sectional view of the large pellicle film forming substrate according to the present invention, and FIG. FIG. 3 is a longitudinal cross-sectional explanatory view in a state where a pellicle film is formed on the surface of the large-sized pellicle film forming substrate in FIG. 1, and FIG. 3 is a vertical cross-sectional explanatory view in a state in which the pellicle film in FIG. .
[0027]
1 to 3, reference numeral 1 denotes a film forming substrate for a large pellicle according to the present invention, in which chromium is coated on a back surface of a large glass plate 2 to a predetermined thickness, and a conductive layer 3 is laminated. It is constituted by.
[0028]
A large glass plate 2 having an area of 1,600 cm 2 or more and a thickness of 2 to 15 mm is used as a base material for the large-sized pellicle film formation substrate 1. The glass plate 2 is laminated with a conductive layer 3 having a thickness of 0.01 μm to 1 μm and formed by coating chromium. In the above embodiment, chromium is used in forming the conductive layer 3, but chromium oxide or chromium alloy can be used in addition to chromium.
[0029]
As a method of coating the glass plate 2 with chromium or a chromium alloy, a method of uniformly covering the back surface of the support with chromium or a chromium alloy, such as vacuum deposition, sputtering, ion plating, plating, or the like can be used.
[0030]
Since the conductive substrate 3 is laminated on the back surface of the glass plate 2 as described above, the large-sized pellicle film-forming substrate 1 according to the present invention significantly reduces static electricity charged on the surface of the large-sized pellicle film-forming substrate 1. Thus, dust adhering to the surface of the large-sized pellicle deposition substrate 1 due to the action of static electricity can be effectively removed.
[0031]
Therefore, as shown in FIG. 3, a large pellicle film 4 is formed by applying a film material such as cellulose ester on the surface of the large pellicle film forming substrate 1, and this pellicle film 4 is further formed on the large pellicle film forming substrate. When peeled from the surface of 1, static electricity generated on the surface of the large-sized pellicle film formation substrate 1 and dust attached due to the influence of the static electricity can be easily removed.
[0032]
In the above-described embodiments, cellulose ester is used as the film material of the pellicle film 4, but other materials such as polyvinyl propional, polyvinyl butyral, cellulose acetate, polyethylene terephthalate, polypropylene, valylene, and polymethyl methacrylate are used. I can do it. These film materials can be formed into a desired thickness on the surface of the glass plate 2 by spin coating using a spin coater or the like.
[0033]
An example of a method for manufacturing a large pellicle film 4 using the large pellicle film formation substrate 1 having the above-described structure will be described. As shown in FIGS. The film material 4a made of cellulose ester is dropped from the solution discharge nozzle 5, and the surface of the large pellicle film forming substrate 1 is rotated while the large pellicle film forming substrate 1 is rotated around the rotation axis 6 using a spin coater or the like. Then, a pellicle film 4 is formed.
[0034]
After the pellicle film 4 is completely formed on the surface of the large pellicle film formation substrate 1, the large pellicle film formation substrate 1 is moved and placed on the peeling stage 7. Subsequently, a temporary frame (not shown) used for peeling the pellicle film 4 is adhered and fixed to the surface of the pellicle film 4, and in this state, one side surface of the pellicle film 4 is gradually raised together with the temporary frame. Then, the pellicle film 4 is peeled off from the surface of the large-sized pellicle film formation substrate 1. After the peeling of the pellicle film 4 is completed, static electricity generated when the pellicle film 4 is peeled can be reduced and dust attached due to the influence of static electricity can be removed.
[0035]
【The invention's effect】
In the large-sized pellicle film-forming substrate according to the present invention, the large-size pellicle film-forming substrate is formed by conducting the conductive treatment on the back surface of the large-sized glass plate. In addition, there is an effect that the charge generated on the surface of the film formation substrate can be remarkably relieved, thereby preventing dust from adhering to the surface of the film formation substrate for a large pellicle.
[0036]
Further, since the material of the large-sized pellicle film forming substrate is a large glass plate, it is possible to prevent the surface from being easily scratched, the polishing operation is easy, and the film forming performance of the large pellicle film is good. Furthermore, since the conductive treatment is performed only on the back surface of the large-sized pellicle film formation substrate, the surface subjected to the conductive treatment does not need to be polished and has the effect that it can be used for a long time. .
[0037]
In the present invention, when the entire back surface of the large glass plate is subjected to a conductive treatment with chromium, chromium oxide or chromium alloy, chromium, chromium oxide or chromium alloy is coated by a coating method. By applying to a glass plate, the conductive treatment can be easily performed. In addition, there is an effect that the conductive performance can be efficiently improved by conducting the conductive treatment with chromium, chromium oxide or chromium alloy.
[0038]
In the method for producing a large pellicle film according to the present invention, a large glass plate whose back surface is subjected to conductive treatment with chromium, chromium oxide, or a chromium alloy is used as a film forming substrate for a large pellicle. After removing dust adhering at the time of peeling of the pellicle film, the pellicle film molding material is applied so as to have a desired film thickness to form a pellicle film, and the pellicle film is formed from the surface of the large pellicle film formation substrate. Therefore, there is an effect that the pellicle film can be efficiently manufactured. In particular, by carrying out the method of the present invention, when peeling off the pellicle film, the surface of the large pellicle film formation substrate has an effect of effectively removing dust attached due to static electricity. Yes.
[Brief description of the drawings]
FIG. 1 is a longitudinal cross-sectional explanatory view of a film forming substrate for a large pellicle according to the present invention.
2 is an explanatory view of a vertical cross section in a state where a pellicle film is formed on the surface of a film forming substrate for a large pellicle in FIG. 1. FIG.
3 is a longitudinal cross-sectional explanatory view showing a state in which the pellicle film of FIG. 2 is peeled off from a large-sized pellicle film formation substrate.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Film forming substrate 2 for large pellicles ... Glass plate 3 ... Conductive layer 4 ... Pellicle film 4a ... Film material 5 ... Solution discharge nozzle 6 ... Rotating shaft 7 ... Peeling stage

Claims (3)

大型ペリクル膜を製造する際に使用される成膜基板に於て、大型のガラス板の裏面に導電性処理を施して成膜基板を構成することを特徴とした大型ペリクル用成膜基板。A film forming substrate for a large pellicle, wherein a film forming substrate is formed by subjecting a back surface of a large glass plate to a conductive treatment in a film forming substrate used for manufacturing a large pellicle film. 前記大型ガラス板の裏面全面に、クロム、クロム酸化物、或はクロム合金による導電性処理を施して構成することを特徴とした請求項1の大型ペリクル用成膜基板。2. The film forming substrate for a large pellicle according to claim 1, wherein the entire back surface of the large glass plate is subjected to a conductive treatment with chromium, chromium oxide, or chromium alloy. 裏面にクロム、クロム酸化物或はクロム合金によって導電性処理が施された大型ガラス板よりなる大型ペリクル用成膜基板の表面に、ペリクル膜成形材料を所望の膜厚となるように塗布してペリクル膜を成形し、かつ前記大型ペリクル用成膜基板より該ペリクル膜を剥離して製造することを特徴とした大型ペリクル膜の製造方法。A pellicle film molding material is applied to the surface of a large-sized pellicle film-forming substrate made of a large glass plate that has been subjected to a conductive treatment with chromium, chromium oxide, or a chromium alloy on the back surface. A method for producing a large pellicle film, characterized by forming a pellicle film and peeling the pellicle film from the film substrate for large pellicle.
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