JP4247383B2 - Fine ablation processing method of transparent material - Google Patents
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- 239000012780 transparent material Substances 0.000 title claims description 39
- 238000003672 processing method Methods 0.000 title claims description 12
- 238000002679 ablation Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 47
- 239000011521 glass Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 26
- 230000003287 optical effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012567 medical material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Description
本発明は、透明材料の微細加工方法に関する。更に詳しくは、シングルモードビームのパルスレーザーを用いた透明材料のアブレーション加工による、表面にパターン化構造を有する透明材料の微細表面加工方法に関する。 The present invention relates to a transparent material microfabrication method. More specifically, the present invention relates to a fine surface processing method of a transparent material having a patterned structure on the surface by ablation processing of the transparent material using a single mode beam pulse laser.
従来より、光の吸収が少ない透明物質は、通常のレーザーアブレーションやレーザー溶融法などの直接的なレーザーエッチング法を利用する加工は困難であることが知られている。 Conventionally, it has been known that a transparent material with low light absorption is difficult to process using a direct laser etching method such as a normal laser ablation method or a laser melting method.
例えば、石英ガラスの微細表面加工方法としては、次のような方法が知られている。
（１）多段階リソグラフィ法
この方法では、まず、適切なレジストを基板表面に製膜した後、リソグラフィによってパターニングし、イオン・ビームやプラズマ、または、フッ酸を用いてエッチングを行ない、その後、更にレジストを剥離する方法（例えば、非特許文献１および特許文献１参照）。
（２）イオンエッチング法
イオン注入法により生じたエッチング速度の差を利用して、マスクレスの化学エッチングを行う方法（例えば、非特許文献２参照）。
（３）短波長レーザー法
透明材料が吸収できる短波長光を発振するレーザーを利用してドライエッチングを行う方法（例えば、特許文献２参照）。
（４）極短パルスレーザー法
パルス幅がピコ秒以下の極短パルスレーザーを使用したドライエッチング法（例えば、非特許文献３参照）。
（５）レーザー誘起プラズマ法
金属基板をガラスの後方に置いて、レーザーを照射し、金属から発生したプラズマを利用して行う方法（例えば、特許文献３参照）。
（６）レーザー吸収率の高い成分を生成させる方法
レーザー吸収率の高い成分をあらかじめ生成させたガラス表面層からなる被加工物に向けてレーザーを照射する方法（例えば、特許文献４参照）。
（７）ガラス基板表面に顔料などの光吸収層を形成後、レーザー加工を行う方法
ガラス基板表面に顔料等の光吸収層を形成・付着させ、該表面に向けてレーザーを照射する。光吸収層がレーザーエネルギーを吸収して、ガラス基板表面に高温・高圧のプラズマ状態が発生し、表面層のガラスを溶融・除去する方法（例えば、特許文献５、特許文献６および特許文献７参照）。
（８）流動性物質を透明材料の裏面に接触させた後、レーザー加工を行う方法
流動性物質を透明材料の裏面に接触させ、透明材料の表面からレーザーを照射することを特徴とする透明材料の微細加工法（例えば、特許文献８参照）。
For example, the following method is known as a fine surface processing method of quartz glass.
(1) Multi-stage lithography method In this method, first, after forming a suitable resist on the substrate surface, patterning is performed by lithography, and etching is performed using an ion beam, plasma, or hydrofluoric acid. A method of removing the resist (for example, see Non-Patent Document 1 and Patent Document 1).
(2) Ion etching method A method of performing maskless chemical etching using a difference in etching rate caused by an ion implantation method (see, for example, Non-Patent Document 2).
(3) Short wavelength laser method A method of performing dry etching using a laser that oscillates short wavelength light that can be absorbed by a transparent material (for example, see Patent Document 2).
(4) Ultra-short pulse laser method A dry etching method using an ultra-short pulse laser having a pulse width of picosecond or less (see, for example, Non-Patent Document 3).
(5) Laser induced plasma method A method in which a metal substrate is placed behind a glass, irradiated with a laser, and plasma generated from the metal is used (for example, see Patent Document 3).
(6) Method of generating a component having a high laser absorptance A method of irradiating a workpiece made of a glass surface layer in which a component having a high laser absorptivity is generated in advance (see Patent Document 4, for example).
(7) Method of performing laser processing after forming a light absorption layer such as a pigment on the glass substrate surface. Forming and attaching a light absorption layer such as a pigment on the glass substrate surface, and irradiating the surface with the laser. A method in which a light absorption layer absorbs laser energy to generate a high-temperature and high-pressure plasma state on the glass substrate surface, and the glass on the surface layer is melted and removed (see, for example, Patent Document 5, Patent Document 6, and Patent Document 7). ).
(8) A method of performing laser processing after bringing a fluid substance into contact with the back surface of the transparent material. (See, for example, Patent Document 8).
しかしながら、上記（１）の方法は、フォトリソグラフィ技術に基づいているので、レジストの塗膜、乾燥、露光、現像、エッチング、剥離などの多数の複雑な工程が必要であり、微細加工するための時間効率が低いという問題がある。（２）の方法は集光できるイオン注入装置が必要であり、加工できる範囲が小さく時間効率が低いために量産に向いてないという問題がある。（３）および（４）の方法では高真空環境が必要であり、エネルギー効率も悪く、量産に向いていないという問題がある。（５）、（７）および（８）の方法では、金属基板表面や顔料などの光吸収層を別途準備し、最適条件化でレーザー照射を行う必要がある。（６）ではレーザー吸収率の高い成分を生成させることが必須となるので、加工素材を自由に選ぶことができないなどの問題点がある。 However, since the method (1) is based on the photolithography technique, a number of complicated steps such as resist coating, drying, exposure, development, etching, and stripping are required, and the fine processing is required. There is a problem that time efficiency is low. The method (2) requires an ion implantation apparatus that can collect light, and has a problem that it is not suitable for mass production because the processable range is small and the time efficiency is low. The methods (3) and (4) require a high vacuum environment, have low energy efficiency, and are not suitable for mass production. In the methods (5), (7), and (8), it is necessary to separately prepare a light absorption layer such as a metal substrate surface and a pigment, and perform laser irradiation under optimum conditions. In (6), since it is essential to generate a component having a high laser absorption rate, there is a problem that a processing material cannot be freely selected.
上記のような問題点に鑑み、本発明は、レーザー照射で透明材料を加工する前にその面に特別の処理を施すことなく、比較的低パワー・小型のレーザー装置で、真空雰囲気が不要で、かつ、一段階で簡便にかつ精密に透明材料を微細アブレーション加工できる方法を提供することを目的とする。 In view of the above problems, the present invention is a relatively low-power, small-sized laser device that does not require a vacuum atmosphere without performing special treatment on the surface before processing the transparent material by laser irradiation. And it aims at providing the method of carrying out the fine ablation process of a transparent material simply and precisely in one step.
本発明者らは、レーザー光化学などの基礎研究において、とくに、集光レーザー光を石英ガラスなどの透明材料に照射したときのアブレーション現象などの動的な挙動を詳細に検討した結果、レーザービームのモードが加工品位に大きな影響を与えていることを見出した。本発明は、この知見を応用してなされたものである。 In basic research such as laser photochemistry, the present inventors have studied in detail the dynamic behavior such as ablation phenomenon when a condensing laser beam is irradiated onto a transparent material such as quartz glass. We found that the mode has a great influence on the processing quality. The present invention has been made by applying this finding.
すなわち、本発明は
（１）照射する波長３５５ｎｍのレーザー波長に対する吸収係数が１ｃｍ―１以下である透明材料に、強度範囲が１Ｊ・ｃｍ−２・ｐｕｌｓｅ−１から１０ｋＪ・ｃｍ−２・ｐｕｌｓｅ−１までのシングルモードビームのパルスレーザーを照射することによりアブレーション加工を行うことを特徴とする透明材料の微細加工方法、
（２）前記透明材料表面にパルスレーザーを単一（シングル）パルス照射することを特徴とする（１）に記載の透明材料の微細加工方法、
（３）形成される加工穴の直径が５０ｎｍ〜１ｍｍ、または加工溝の幅が５０ｎｍ〜１ｍｍであることを特徴とする（１）又は（２）に記載の透明材料の微細加工方法、
（４）前記透明材料の表面に使用レーザー波長を吸収しない粘着テープを付着させた状態で、その上からレーザー照射を行うことを特徴とする（１）〜（３）のいずれかに記載の透明材料の微細加工方法、
（５）前記透明材料が、石英ガラス、一般ガラス、フッ化カルシウム、フッ化バリウム、フッ化物材料、シリコンカーバイド、サファイヤ、アルミナ、水晶又はダイヤモンド、フッ素樹脂、ポリイミド樹脂であることを特徴とする（１）〜（４）のいずれかに記載の透明材料の微細加工方法、
（６）前記パルスレーザーとして、そのパルス半値幅が５ｐｓ〜１ｍｓまでのパルスレーザーを用いることを特徴とする（１）〜（５）のいずれかに記載の透明材料の微細加工方法、
を提供するものである。
That is, the present invention provides (1) a transparent material having an absorption coefficient of 1 cm −1 or less for a laser wavelength of 355 nm to be irradiated, and an intensity range of 1 J · cm −2 · pulse −1 to 10 kJ · cm −2 · pulse − A fine processing method of a transparent material, characterized by performing ablation processing by irradiating a pulse laser of a single mode beam up to 1 ;
(2) The transparent material microfabrication method according to (1), wherein the surface of the transparent material is irradiated with a single pulsed pulse laser.
(3) The fine processing method for a transparent material according to (1) or (2), wherein the diameter of the processed hole to be formed is 50 nm to 1 mm, or the width of the processed groove is 50 nm to 1 mm,
(4) The transparent material according to any one of (1) to (3), wherein the surface of the transparent material is irradiated with a laser from a pressure-sensitive adhesive tape that does not absorb the used laser wavelength. Fine processing method of material,
(5) The transparent material is quartz glass, general glass, calcium fluoride, barium fluoride, fluoride material, silicon carbide, sapphire, alumina, crystal or diamond, fluorine resin, polyimide resin ( 1)-the fine processing method of the transparent material according to any one of (4),
(6) The transparent material fine processing method according to any one of (1) to (5), wherein a pulse laser having a pulse half-value width of 5 ps to 1 ms is used as the pulse laser.
Is to provide.
本発明によれば、表面に任意のパターン構造を有する透明材料のナノメートルサイズ〜ミリメートルサイズの微細かつ精密な加工が短時間で可能である。そして、小型の装置により簡便な方法で透明材料の加工ができる。具体的な応用例としては、マイクロレンズアレー、回折格子、光導波路、発光素子、回折素子（ＤＯＥ）、フェーズマスク、フォトニック素子、液晶配向基板などの光学素子の加工やＤＮＡチップ基板、マイクロリアクター反応容器、マイクロ分析セル、センサー基板などの化学・環境・バイオ・医療用材料の調製、極微小マーキング、微小電気回路素子などの産業応用材料のように様々な応用が可能となる。 According to the present invention, fine and precise processing of a nanometer to millimeter size transparent material having an arbitrary pattern structure on the surface is possible in a short time. And a transparent material can be processed by a simple method with a small apparatus. Specific application examples include processing of optical elements such as microlens arrays, diffraction gratings, optical waveguides, light emitting elements, diffraction elements (DOE), phase masks, photonic elements, liquid crystal alignment substrates, DNA chip substrates, and microreactors. Various applications such as preparation of chemical / environmental / bio / medical materials such as reaction vessels, microanalytical cells, sensor substrates, and other industrial application materials such as micro-marking and micro-electric circuit elements are possible.
本発明の透明材料の微細加工方法の好ましい実施の態様について詳細に説明する。
本発明では、シングルモード（ＴＥＭ００）のパルスレーザー光を用い、レンズなどで所定の強度に集光された状態で、透明材料に照射する。このとき、透明材料は当該レーザー波長に対して吸収帯を持たないので元来吸収されないのであるが、シングルモード光は容易に高パワー密度が得られるために、非線形吸収現象が誘起され、入射レーザー光が当該透明材料の表面層に吸収されることになる。集光レンズには単レンズを用いても構わないし、アクロマートレンズなどの複合レンズを用いることもできる。さらに、微小なレーザー径を得たい場合には、レーザー光を凹レンズやビームエキスパンダーで一端拡大し、その後焦点距離の短い（開口数ＮＡ（Numerical Aperture）の大きな）レンズで集光して、当該透明材料に照射することで達成できる。また、レーザービームの走査方法は、必要とする加工精度が保証される試料移動ステージ（自動ステージ）を用いて、固定レーザービームに対して試料を移動させるか、ガルバノミラーとｆθレンズを組み合わせてレーザービームを走査する方法が有効である。
A preferred embodiment of the transparent material microfabrication method of the present invention will be described in detail.
In the present invention, single mode (TEM 00 ) pulsed laser light is used, and the transparent material is irradiated in a state of being focused to a predetermined intensity by a lens or the like. At this time, since the transparent material does not have an absorption band for the laser wavelength, it is not absorbed originally. However, since single mode light can easily obtain a high power density, a nonlinear absorption phenomenon is induced, and the incident laser Light is absorbed by the surface layer of the transparent material. A single lens may be used as the condenser lens, or a composite lens such as an achromatic lens may be used. Furthermore, to obtain a very small laser diameter, the laser light is enlarged once with a concave lens or a beam expander, and then condensed with a lens with a short focal length (a large numerical aperture (NA)). This can be achieved by irradiating the material. The laser beam scanning method uses a sample moving stage (automatic stage) that guarantees the required processing accuracy, moves the sample with respect to the fixed laser beam, or combines the laser with a galvanometer mirror and an fθ lens. A method of scanning the beam is effective.
本発明で重要なポイントはシングルモードのパルスレーザー光を用いることである。ビームのＭ２値は５以下である必要があるが、より好ましくは３以下である。一方、マルチモードのパルスレーザー光を用いると適切な集光状態が得られなかったり、レーザー照射部位の周囲に照射損傷が現れるので、マルチモードのパルスレーザー光は本発明のような微細な表面加工には適さない。しかし、光学素子を使用して、マルチモードのレーザービームのＭ２値を５以下に変換したレーザービームは微細加工に用いることができる。光レーザー強度は、加工サイズによって異なるが、レーザー強度が１Ｊ・ｃｍ−２・ｐｕｌｓｅ−１から１０ｋＪ・ｃｍ−２・ｐｕｌｓｅ−１までが好ましい。更に好ましいのは１０Ｊ・ｃｍ−２・ｐｕｌｓｅ−１から１ｋＪ・ｃｍ−２・ｐｕｌｓｅ−１までの範囲である。レーザー強度が弱すぎる場合には、エッチングが起こらず、強すぎるときは材料に損傷を与えることになる。 An important point in the present invention is to use a single mode pulse laser beam. The M 2 value of the beam needs to be 5 or less, more preferably 3 or less. On the other hand, if a multimode pulse laser beam is used, an appropriate condensing state cannot be obtained, or irradiation damage appears around the laser irradiation site. Not suitable for. However, a laser beam obtained by converting the M 2 value of a multimode laser beam to 5 or less using an optical element can be used for fine processing. The optical laser intensity varies depending on the processing size, but the laser intensity is preferably from 1 J · cm −2 · pulse −1 to 10 kJ · cm −2 · pulse −1 . More preferred is a range from 10 J · cm −2 · pulse −1 to 1 kJ · cm −2 · pulse −1 . If the laser intensity is too weak, etching will not occur, and if it is too strong, the material will be damaged.
本発明方法の高品位微細加工が明解なプロセスとして発揮されるのは、単一（シングル）パルス照射を行ったときである。これは、集光されたシングルモード光の高パワー密度特性によって、非線形吸収現象が誘起されることによる。また、これらのレーザー照射によって、加工パターンとして穴形状や溝形状のものを作成することができるが、光学素子の選択および配置を最適化することで、穴直径は５０ｎｍ〜１ｍｍ、また、溝幅は５０ｎｍ〜１ｍｍの間に設定することができる。 The high-quality microfabrication of the method of the present invention is exhibited as a clear process when single (single) pulse irradiation is performed. This is because the nonlinear absorption phenomenon is induced by the high power density characteristic of the condensed single mode light. In addition, with these laser irradiations, holes and grooves can be created as processing patterns, but by optimizing the selection and arrangement of optical elements, the hole diameter is 50 nm to 1 mm, and the groove width Can be set between 50 nm and 1 mm.
使用するレーザーのパルス幅は、半値幅が５ｐｓ〜１ｍｓまでの範囲にあることが好ましく、より好ましくは０．１ｎｓ〜１００ｎｓである。ナノ秒パルスのレーザー装置は価格も安価で、超短パルスレーザー装置と比べて取扱が容易であるという特長がある。 The pulse width of the laser to be used is preferably in the range of half-width of 5 ps to 1 ms, more preferably 0.1 ns to 100 ns. The nanosecond pulse laser device is inexpensive and easy to handle compared to the ultrashort pulse laser device.
透明材料の表面に対して、加工残渣の付着や亀裂等の加工損傷を防止したい場合には、粘着テープ（マスキングテープ）を加工部位に接着・付着させた状態で、その上からレーザー照射を行うと効果がある。このとき、使用する粘着テープは、レーザー波長に吸収があると加工効率が低下するので、その選択には注意を要する。 To prevent processing damage such as adhesion of processing residues and cracks on the surface of transparent material, perform laser irradiation from the top with adhesive tape (masking tape) adhered and adhered to the processing site. And effective. At this time, since the processing efficiency of the adhesive tape to be used decreases when the laser wavelength is absorbed, care must be taken in selecting it.
本発明では、レーザー照射雰囲気は、大気中で問題なく加工を行うことができる。この他に、真空雰囲気や各種のガス雰囲気や液体中でも可能である。しかし、ガス雰囲気や液体の場合には当該ガス・液体でレーザー波長に吸収がないことが重要である。 In the present invention, the laser irradiation atmosphere can be processed without problems in the air. In addition, it is possible in a vacuum atmosphere or various gas atmospheres or liquids. However, in the case of a gas atmosphere or liquid, it is important that the gas / liquid does not absorb the laser wavelength.
本発明に用いられる透明材料としては、使用するレーザー波長に対して吸収係数が１ｃｍ―１以下の透明性があれば良い。例えば、石英ガラス、一般ガラス、フッ化カルシウム、フッ化マグネシウム、フッ化リチウム、フッ化バリウム、シリコンカーバイド、アルミナ、サファイヤ、水晶、ダイヤモンドのような無機材料、フッ素樹脂、ポリイミド樹脂などのプラスチック材料、およびそれらの混合物などが挙げられる。透明材料の形態は基板状、容器状、管状など任意の形状で良い。 The transparent material used in the present invention only needs to have transparency with an absorption coefficient of 1 cm −1 or less with respect to the laser wavelength used. For example, quartz glass, general glass, calcium fluoride, magnesium fluoride, lithium fluoride, barium fluoride, silicon carbide, alumina, sapphire, crystal, diamond and other inorganic materials, fluorine resin, polyimide resin and other plastic materials, And mixtures thereof. The form of the transparent material may be any shape such as a substrate shape, a container shape, or a tubular shape.
本発明における微細加工方法に用いることができるレーザーは、ＡｒＦエキシマレーザー（波長：１９３ｎｍ）、ＫｒＣｌエキシマレーザー（２２２ｎｍ）、ＫｒＦエキシマレーザー（２４８ｎｍ）、ＸｅＣｌエキシマレーザー（３０８ｎｍ）、ＸｅＦエキシマレーザー（３５１ｎｍ）、Ｆ２レーザー（１５７ｎｍ）、ＹＡＧレーザー、ＹＬＦレーザー、ＹＶＯレーザー、ファイバレーザー、ディスクレーザー、半導体ダイオード励起固体レーザー、色素レーザー、炭酸ガスレーザー、Ｋｒイオンレーザー、Ａｒイオンレーザー、銅蒸気レーザー、チタンサファイヤレーザー等の基本発振波長光、およびその基本発振波長光を非線形光学素子などにより高調波に変換したものを用いることもできる。例えば、ＹＶＯレーザーの二倍高調波（５３２ｎｍ）、三倍高調波（３５５ｎｍ）、四倍高調波（２６６ｎｍ）なども挙げられる。Ｍ２値が５以下のシングルモードビームを用いるか、マルチモードビームをＭ２値５以下に変換したものを使用する。 Lasers that can be used in the microfabrication method of the present invention are ArF excimer laser (wavelength: 193 nm), KrCl excimer laser (222 nm), KrF excimer laser (248 nm), XeCl excimer laser (308 nm), and XeF excimer laser (351 nm). , F 2 laser (157 nm), YAG laser, YLF laser, YVO laser, fiber laser, disk laser, semiconductor diode pumped solid state laser, dye laser, carbon dioxide gas laser, Kr ion laser, Ar ion laser, copper vapor laser, titanium sapphire It is also possible to use a fundamental oscillation wavelength light such as a laser and the fundamental oscillation wavelength light converted into a harmonic by a nonlinear optical element or the like. For example, the second harmonic (532 nm), the third harmonic (355 nm), the fourth harmonic (266 nm), and the like of the YVO laser are also included. A single mode beam having an M 2 value of 5 or less is used, or a multimode beam converted to an M 2 value of 5 or less is used.
本発明方法では、リソグラフィ法では多段階の工程が必要であることに比べて、現像工程が不要な一段階のレーザー処理で加工することができる。さらに、パターンの精度は１マイクロメーター以下でも可能である。加えて、エッチング速度もコントロールできることから、本発明は微細化、精密化、高品質化できる方法であると共に、本発明は非常に低コストであり、量産性に富む方法を提供する。
なお、本発明によって提供可能な精密成型品としては、例えば、マイクロレンズアレー、回折格子、光導波路、発光素子、回折素子（ＤＯＥ）、フェーズマスク、フォトニック素子、液晶配向基板などの光学素子、ならびに、ＤＮＡチップ基板、マイクロリアクター反応容器、マイクロ分析セル、センサー基板などの化学・環境・バイオ・医用材料、極微小マーキング、微小電気回路素子などの産業応用材料などが挙げられる。
In the method of the present invention, the lithography method can be processed by a single-stage laser treatment that does not require a development process, as compared to the case where a multi-step process is required in the lithography method. Furthermore, the pattern accuracy can be less than 1 micrometer. In addition, since the etching rate can also be controlled, the present invention is a method that can be miniaturized, refined, and improved in quality, and the present invention provides a method that is extremely low cost and rich in mass productivity.
Examples of precision molded products that can be provided by the present invention include, for example, microlens arrays, diffraction gratings, optical waveguides, light emitting elements, diffraction elements (DOE), phase masks, photonic elements, optical elements such as liquid crystal alignment substrates, In addition, chemical / environment / bio / medical materials such as DNA chip substrates, microreactor reaction vessels, microanalysis cells and sensor substrates, industrially applied materials such as ultra-fine markings, micro-electric circuit elements, and the like.
なお、本発明は、上述の実施形態に制限されるものではなく、本発明の趣旨を逸脱しない範囲で種々変更可能である。 In addition, this invention is not restrict | limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the meaning of this invention.
次に、本発明を実施例に基づいて、さらに詳細に説明する。
実施例１
Ｎｄ：ＹＶＯレーザーの第３高調波（波長３５５ｎｍ、パルス幅２０ｎｓ）のシングルモードビーム（Ｍ２値：１．３以下）を用い、照射径約１０μｍ、強度０．０６ｍＪ・ｐｕｌｓｅ−１で合成石英ガラス基板にシングルパルスを照射したところ、周囲に全く損傷のない高品位の約１０μｍ径の円錐形状微細加工ができた。このとき、最深部の加工深さは約１．５μｍであった。図１は、ガラス基板を毎秒３ｃｍの速度で移動させながら、パルスレーザー照射を２．５ｋＨｚの繰り返し速度で連続的にアブレーション加工を行ったものの顕微鏡像である。円錐形状微細加工がアレー状にできることがわかった。さらに、照射光学系を改良することでレーザービーム径の縮小を検討したところ、合成石英ガラス基板上に周囲に全く損傷のない高品位の約３μｍ径の円錐形状微細加工ができた。
Next, the present invention will be described in more detail based on examples.
Example 1
Synthetic quartz using an Nd: YVO third harmonic (wavelength 355 nm, pulse width 20 ns) single mode beam (M 2 value: 1.3 or less) with an irradiation diameter of about 10 μm and an intensity of 0.06 mJ · pulse −1 When the glass substrate was irradiated with a single pulse, a high-quality conical microfabrication with a diameter of about 10 μm was obtained without any damage around the glass substrate. At this time, the processing depth of the deepest part was about 1.5 μm. FIG. 1 is a microscopic image of ablation processed continuously with pulse laser irradiation at a repetition rate of 2.5 kHz while moving a glass substrate at a speed of 3 cm per second. It was found that conical microfabrication can be made into an array. Further, when the reduction of the laser beam diameter was studied by improving the irradiation optical system, a high-quality cone-shaped microfabrication with a diameter of about 3 μm was obtained on the synthetic quartz glass substrate without any damage at all.
実施例２
Ｎｄ：ＹＶＯレーザーの第３高調波（波長３５５ｎｍ、パルス幅２０ｎｓ）のシングルモードビームを用い、照射径４０μｍ、強度０．３ｍＪ・ｐｕｌｓｅ−１で硼珪酸ガラス基板にシングルパルスを照射したところ、周囲に全く損傷のない高品位の約４０μｍ径の円錐形状微細加工ができた。このとき、最深部の加工深さは約０．６μｍであった。
Example 2
Using a single mode beam of the third harmonic (wavelength 355 nm, pulse width 20 ns) of an Nd: YVO laser and irradiating a borosilicate glass substrate with an irradiation diameter of 40 μm and an intensity of 0.3 mJ · pulse −1 , Thus, a high-quality conical microfabrication with a diameter of about 40 μm was obtained. At this time, the processing depth of the deepest part was about 0.6 μm.
実施例３
Ｎｄ：ＹＶＯレーザーの第３高調波（波長３５５ｎｍ、パルス幅２０ｎｓ）のシングルモードビームを用い、照射径４０μｍ、強度０．３ｍＪ・ｐｕｌｓｅ−１、パルス繰り返し速度１ｋＨｚの照射条件で、毎秒１ｃｍの速度で移動する硼珪酸ガラス基板に連続的にパルスを照射したところ、周囲に全く損傷のない高品位の約４０μｍ幅の溝形状微細加工ができた。このとき、最深部の加工深さは約１．３μｍであった。
Example 3
Using a Nd: YVO laser third harmonic (wavelength 355 nm, pulse width 20 ns) single mode beam, irradiation speed of 1 cm per second under irradiation conditions of irradiation diameter 40 μm, intensity 0.3 mJ · pulse −1 , pulse repetition rate 1 kHz When the pulse was continuously applied to the borosilicate glass substrate moving at, a high-quality groove-shaped microfabrication of about 40 μm width without any damage was obtained. At this time, the processing depth of the deepest part was about 1.3 μm.
実施例４
Ｎｄ：ＹＶＯレーザーの第３高調波（波長３５５ｎｍ、パルス幅２０ｎｓ）のシングルモードビームを用い、照射径１０μｍ、強度０．２ｍＪ・ｐｕｌｓｅ−１でフッ素樹脂基板にシングルパルスを照射したところ、周囲に全く損傷のない高品位の約１０μｍ径の円錐形状微細加工ができた。このとき、最深部の加工深さは約１．０μｍであった。
Example 4
Using a single mode beam of the third harmonic (wavelength 355 nm, pulse width 20 ns) of an Nd: YVO laser and irradiating a fluororesin substrate with an irradiation diameter of 10 μm and an intensity of 0.2 mJ · pulse −1 , A high-quality conical microfabrication with a diameter of about 10 μm was obtained without any damage. At this time, the processing depth of the deepest part was about 1.0 μm.
実施例５
Ｎｄ：ＹＶＯレーザーの第３高調波（波長３５５ｎｍ、パルス幅２０ｎｓ）のシングルモードビームを用い、照射径１５μｍ、強度０．３ｍＪ・ｐｕｌｓｅ−１でフッ化カルシウム基板にシングルパルスを照射したところ、周囲に全く損傷のない高品位の約１５μｍ径の円錐形状微細加工ができた。このとき、最深部の加工深さは約０．５μｍであった。
Example 5
Using a single mode beam of the third harmonic (wavelength 355 nm, pulse width 20 ns) of an Nd: YVO laser and irradiating a calcium fluoride substrate with a single pulse at an irradiation diameter of 15 μm and an intensity of 0.3 mJ · pulse −1 , High-quality conical microfabrication with a diameter of about 15 μm was obtained. At this time, the processing depth of the deepest part was about 0.5 μm.
実施例６
Ｎｄ：ＹＶＯレーザーの第３高調波（波長３５５ｎｍ、パルス幅２０ｎｓ）のシングルモードビームを用い、照射径１０μｍ、強度０．１ｍＪ・ｐｕｌｓｅ−１でサファイヤ基板にシングルパルスを照射したところ、周囲に全く損傷のない高品位の約１０μｍ径の円錐形状微細加工ができた。このとき、最深部の加工深さは約０．６μｍであった。
Example 6
Using a single mode beam of the third harmonic (wavelength 355 nm, pulse width 20 ns) of an Nd: YVO laser, a single pulse was irradiated to the sapphire substrate with an irradiation diameter of 10 μm and an intensity of 0.1 mJ · pulse −1. A high-quality conical microfabrication with a diameter of about 10 μm without damage was achieved. At this time, the processing depth of the deepest part was about 0.6 μm.
比較例１
Ｎｄ：ＹＡＧレーザーの第３高調波（波長３５５ｎｍ、パルス幅１０ｎｓ）のマルチモードビームを用い、強度３ｍＪ・ｐｕｌｓｅ−１で合成石英ガラス基板または硼珪酸ガラス基板に焦点距離１０ｃｍの凸レンズを通して照射した。レンズの焦点位置の集光点に置いても両ガラス基板は全く表面加工されなかった。実施例１と比べて強度を５０倍大きくしているにも係わらず、このレーザーではM2値が１０を越えるので、マルチモードビームの照射では集光点でのパワー密度が不足しているためにアブレーション加工を行うことができなかった。
Comparative Example 1
Using a multi-mode beam of the third harmonic (wavelength 355 nm, pulse width 10 ns) of an Nd: YAG laser, the synthetic quartz glass substrate or borosilicate glass substrate was irradiated through a convex lens with a focal length of 10 cm at an intensity of 3 mJ · pulse −1 . Even when placed at the focal point of the focal point of the lens, both glass substrates were not surface-treated at all. Despite the fact that the intensity is increased 50 times compared to Example 1, this laser has an M 2 value exceeding 10, so that the power density at the focal point is insufficient for multimode beam irradiation. The ablation process could not be performed.
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| JP3615691B2 (en) * | 2000-06-20 | 2005-02-02 | 新日鐵化学株式会社 | Laser processing method of resin film |
| JP2003010990A (en) * | 2000-09-13 | 2003-01-15 | Hamamatsu Photonics Kk | Laser beam machining device |
-
2003
- 2003-08-28 JP JP2003303897A patent/JP4247383B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102741012A (en) * | 2010-02-05 | 2012-10-17 | 株式会社藤仓 | Formation method for microstructure, and substrate having microstructure |
| CN102741012B (en) * | 2010-02-05 | 2014-12-24 | 株式会社藤仓 | Formation method for microstructure, and substrate having microstructure |
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