JP4245495B2 - Rear light source for display device and display device - Google Patents

Rear light source for display device and display device Download PDF

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JP4245495B2
JP4245495B2 JP2004046217A JP2004046217A JP4245495B2 JP 4245495 B2 JP4245495 B2 JP 4245495B2 JP 2004046217 A JP2004046217 A JP 2004046217A JP 2004046217 A JP2004046217 A JP 2004046217A JP 4245495 B2 JP4245495 B2 JP 4245495B2
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light emitting
semiconductor light
emitting element
temperature
light source
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JP2005236190A (en
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昌彦 小澤
英之 金子
博明 杉浦
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Mitsubishi Electric Corp
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本発明は、透過型液晶表示装置等の透過構造を有する表示装置の背面光源、及びこのような背面光源を備えた表示装置に関する。   The present invention relates to a back light source of a display device having a transmission structure such as a transmissive liquid crystal display device, and a display device including such a back light source.

LCD(液晶表示装置)等の透過型ディスプレイモニタのバックライト(背面光源)としてLED(発光ダイオード)等の半導体発光素子が広く用いられている。輝度の調整は、半導体発光素子に流す順電流を調整するか、あるいは半導体発光素子をパルス駆動し、パルス幅やパルス間隔を調整することにより可能である。例えば、赤、緑、青の光をそれぞれ発する半導体発光素子を用い、各半導体発光素子の発する光を混合すれば照明光として白色光を得ることができる。
半導体発光素子の発する光の色調には素子毎にばらつきがあるが、このばらつきを補償するため、各半導体素子に流す電流値を個別に設定し、所望の色調を得るようにすることも知られている(例えば特許文献1参照)。
2. Description of the Related Art Semiconductor light emitting devices such as LEDs (light emitting diodes) are widely used as backlights (back light sources) for transmissive display monitors such as LCDs (liquid crystal display devices). The brightness can be adjusted by adjusting the forward current flowing through the semiconductor light emitting element or by driving the semiconductor light emitting element in pulses and adjusting the pulse width and pulse interval. For example, white light can be obtained as illumination light by using semiconductor light emitting elements that emit red, green, and blue light, respectively, and mixing the light emitted by the semiconductor light emitting elements.
The color tone of light emitted from a semiconductor light-emitting element varies from element to element, and in order to compensate for this variation, it is also known to set a current value flowing through each semiconductor element to obtain a desired color tone. (See, for example, Patent Document 1).

特開2001−272938号JP 2001-272938

しかしながら、半導体発光素子の発光特性はその発光原理から温度依存性を有する。そのため各半導体発光素子の温度特性のばらつきにより、環境温度の変化や通電による内部温度の変化に伴い、背面光源の色調が変化するという問題があった。即ち、白色光が得られるように各半導体素子の電流値をそれぞれ設定しても、環境温度や内部温度が設定時から変化すると、各素子の温度特性の相違により背面光源からの照明光が色みがかってしまうという問題があった。   However, the light emission characteristics of the semiconductor light emitting element are temperature dependent due to the light emission principle. For this reason, there has been a problem that the color tone of the back light source changes due to variations in the temperature characteristics of each semiconductor light emitting element, along with changes in environmental temperature and changes in internal temperature due to energization. In other words, even if the current value of each semiconductor element is set so that white light can be obtained, if the ambient temperature or internal temperature changes from the time of setting, the illumination light from the back light source changes color due to the difference in temperature characteristics of each element. There was a problem that it would be hard.

本発明はこのような問題に鑑みなされたものであり、その目的は半導体発光素子を使用する背面光源であって、環境温度変化や通電による内部温度の変化に拘わらず一定の色相の照明光を安定して発することができる背面光源を提供することである。   The present invention has been made in view of such problems, and an object of the present invention is a back light source using a semiconductor light emitting device, which can emit illumination light having a constant hue regardless of environmental temperature change or internal temperature change due to energization. It is to provide a back light source that can emit light stably.

上記課題を解決すべく本発明によれば、異なる色の光をそれぞれ発する複数の半導体発光素子と、前記複数の半導体発光素子のアノード−カソード間に流れる電流の値を個別に調整する電流調整手段と、前記複数の半導体発光素子のアノード−カソード間に流れる電流と前記アノード−カソード間の電圧とに基づき、前記複数の半導体発光素子の温度を決定する温度検出手段と、前記複数の半導体発光素子のアノード−カソード間に個別に逆電圧を印加して逆電流を流す逆電圧印加手段と、前記複数の半導体発光素子のそれぞれについて、当該半導体発光素子のアノード−カソード間に前記順電流が流れていない間に、前記温度検出手段によって決定された前記温度に基づいて当該半導体発光素子の温度を略一定に維持すべく、前記逆電圧印加手段により当該半導体発光素子に対し印加される前記逆電圧を制御する温度制御手段とを有することを特徴とする表示装置用の背面光源が提供される。 In order to solve the above problems, according to the present invention, a plurality of semiconductor light emitting devices that emit light of different colors, and a current adjustment that individually adjusts the value of the forward current flowing between the anode and the cathode of the plurality of semiconductor light emitting devices. Means for determining the temperature of the plurality of semiconductor light emitting elements based on the current flowing between the anode and cathode of the plurality of semiconductor light emitting elements and the voltage between the anode and cathode, and the plurality of semiconductor light emitting elements For each of the plurality of semiconductor light emitting elements, the forward current flows between the anode and the cathode of the semiconductor light emitting element for each of the plurality of semiconductor light emitting elements, and reverse voltage applying means for individually applying a reverse voltage between the anode and cathode of the element. during not, to maintain the temperature of the semiconductor light-emitting element substantially constant on the basis of the temperature determined by said temperature detecting means, the reverse voltage Backlight source for a display device characterized by having a temperature control means for controlling the reverse voltage applied to the semiconductor light-emitting device is provided by the pressure means.

本発明によれば、環境温度の変化や通電による内部温度の変化に係らず、常に画像を所望の正しい色調で表示することができる。   According to the present invention, it is possible to always display an image with a desired correct color tone regardless of a change in environmental temperature or a change in internal temperature due to energization.

実施の形態1.
図1は本発明の実施の形態1の背面光源の回路構成を示すブロック図である。この背面光源は赤、緑、青の光をそれぞれ発する半導体発光素子(例えば発光ダイオード)2a、2b、2c、可変型定電流駆動回路3a,3b,3c、電流値制御回路5a,5b,5cを有する。半導体発光素子2aの近傍には、発熱抵抗(抵抗素子)27が配置されている。発熱抵抗27は、温度制御回路25に制御される発熱抵抗駆動回路26により駆動される。
Embodiment 1 FIG.
FIG. 1 is a block diagram showing a circuit configuration of a back light source according to Embodiment 1 of the present invention. The rear light source includes semiconductor light emitting elements (for example, light emitting diodes) 2a, 2b, and 2c that emit red, green, and blue light, variable constant current drive circuits 3a, 3b, and 3c, and current value control circuits 5a, 5b, and 5c. Have. A heating resistor (resistive element) 27 is disposed in the vicinity of the semiconductor light emitting element 2a. The heating resistor 27 is driven by a heating resistor driving circuit 26 controlled by the temperature control circuit 25.

半導体発光素子2aのアノードは給電端子1aに接続され、カソードは可変型定電流駆動回路3aに接続されている。給電端子1aから半導体発光素子2aに供給される電流は可変型定電流駆動回路3aを通り、共通の接地端子11に流れる。電流値制御回路5aは、共通電流増減割合入力端子7から入力される信号及び個別電流調整入力端子6aから入力される信号に基づき半導体発光素子2aに流すべき電流値を決定し、半導体発光素子2aに流れる電流値がこの決定した電流値に等しくなるように可変型定電流駆動回路3aを制御する。   The anode of the semiconductor light emitting element 2a is connected to the power supply terminal 1a, and the cathode is connected to the variable constant current drive circuit 3a. The current supplied from the power supply terminal 1 a to the semiconductor light emitting element 2 a flows through the variable constant current drive circuit 3 a to the common ground terminal 11. The current value control circuit 5a determines a current value to be passed through the semiconductor light emitting element 2a based on a signal input from the common current increase / decrease ratio input terminal 7 and a signal input from the individual current adjustment input terminal 6a, and the semiconductor light emitting element 2a. The variable constant current drive circuit 3a is controlled so that the value of the current flowing in the current becomes equal to the determined current value.

同様に、半導体発光素子2bのアノードは給電端子1bに接続され、カソードは可変型定電流駆動回路3bに接続され、給電端子1bから半導体発光素子2bに供給される電流は可変型定電流駆動回路3bを通り、共通の接地端子11に流れる。電流値制御回路5bは、共通電流増減割合入力端子7から入力される信号及び個別電流調整入力端子6bから入力される信号に基づき半導体発光素子2bに流すべき電流値を決定し、半導体発光素子2bに流れる電流値がこの決定した電流値に等しくなるように可変型定電流駆動回路3bを制御する。   Similarly, the anode of the semiconductor light emitting element 2b is connected to the power supply terminal 1b, the cathode is connected to the variable type constant current drive circuit 3b, and the current supplied from the power supply terminal 1b to the semiconductor light emitting element 2b is variable type constant current drive circuit. It flows through the common grounding terminal 11 through 3b. The current value control circuit 5b determines a current value to be passed through the semiconductor light emitting element 2b based on the signal input from the common current increase / decrease ratio input terminal 7 and the signal input from the individual current adjustment input terminal 6b, and the semiconductor light emitting element 2b. The variable constant current drive circuit 3b is controlled so that the value of the current flowing through becomes equal to the determined current value.

同様に、半導体発光素子2cのアノードは給電端子1cに接続され、カソードは可変型定電流駆動回路3cに接続され、給電端子1cから半導体発光素子2cに供給される電流は可変型定電流駆動回路3cを通り、共通の接地端子11に流れる。電流地制御回路5cは、共通電流増減割合入力端子7から入力される信号及び個別電流調整入力端子6cから入力される信号に基づき半導体発光素子2cに流すべき電流値を決定し、半導体発光素子2cに流れる電流値がこの決定した電流値に等しくなるように可変型定電流駆動回路3cを制御する。   Similarly, the anode of the semiconductor light emitting element 2c is connected to the power supply terminal 1c, the cathode is connected to the variable constant current drive circuit 3c, and the current supplied from the power supply terminal 1c to the semiconductor light emitting element 2c is variable variable constant current drive circuit. It flows through the common ground terminal 11 through 3c. The current ground control circuit 5c determines a current value to be supplied to the semiconductor light emitting element 2c based on a signal input from the common current increase / decrease ratio input terminal 7 and a signal input from the individual current adjustment input terminal 6c, and the semiconductor light emitting element 2c. The variable constant current drive circuit 3c is controlled so that the value of the current flowing through is equal to the determined current value.

給電端子1aには、不図示の電源の出力電圧Vcc1が電流検出抵抗22を介して印加される。温度制御回路25は、信号線31及び32を介して検出した電流検出抵抗22の端子間電圧から半導体発光素子2aに流れる電流値を検出することができる。また、温度制御回路25は、信号線32及び信号線33を介し、半導体発光素子2aのアノード−カソード間の電圧を検出することができる。
電流値制御回路5a〜5c及び可変型定電流駆動回路3a〜3cで電流値調整手段が構成されている。また、温度制御回路25、発熱抵抗駆動回路26、及び発熱抵抗27で温度制御手段が構成されている。
An output voltage Vcc1 of a power supply (not shown) is applied to the power supply terminal 1a via the current detection resistor 22. The temperature control circuit 25 can detect the value of the current flowing through the semiconductor light emitting element 2 a from the voltage between the terminals of the current detection resistor 22 detected via the signal lines 31 and 32. Further, the temperature control circuit 25 can detect the voltage between the anode and the cathode of the semiconductor light emitting element 2 a via the signal line 32 and the signal line 33.
The current value control circuits 5a to 5c and the variable constant current drive circuits 3a to 3c constitute current value adjusting means. The temperature control circuit 25, the heating resistor driving circuit 26, and the heating resistor 27 constitute temperature control means.

尚、他の半導体発光素子2b、2cも半導体発光素子2aと同様、温度制御回路、発熱抵抗駆動回路等を備えるが、図面が過度に複雑にならないよう、図1では記載を省略している。
以下に、上記構成の背面光源の動作を説明する。
The other semiconductor light emitting elements 2b and 2c are also provided with a temperature control circuit, a heating resistor driving circuit, and the like, similar to the semiconductor light emitting element 2a, but are not shown in FIG. 1 so that the drawing is not excessively complicated.
Below, operation | movement of the back light source of the said structure is demonstrated.

先ず、表示される画面を見ながら、個別電流調整入力端子6a、6b、6cに入力する信号を個別に調整することにより、半導体発光素子2a、2b、2cに流れる電流を個別に調整し、白バランスの調整を行う。続いて、共通電流増減割合入力端子7に入力する信号を調整し、半導体発光素子2a、2b、2cに流れる電流を同じ割合で増加または減少させることにより光量、即ち輝度の調整を行う。   First, the currents flowing through the semiconductor light emitting devices 2a, 2b, and 2c are individually adjusted by individually adjusting the signals input to the individual current adjustment input terminals 6a, 6b, and 6c while viewing the displayed screen. Adjust the balance. Subsequently, the signal input to the common current increase / decrease rate input terminal 7 is adjusted, and the amount of light, that is, the luminance is adjusted by increasing or decreasing the current flowing through the semiconductor light emitting elements 2a, 2b, and 2c at the same rate.

この状態から、例えば環境温度の変化や、通電による内部発熱の影響により半導体発光素子の温度が変化した場合、従来の背面光源では、各半導体発光素子の温度特性のばらつきにより、白バランスが崩れる場合があった。それに対し、本実施形態の背面光源では、半導体発光素子内部の半導体接合部における電圧降下は負の温度特性を有すること、即ち、半導体発光素子の抵抗値は負の温度係数を有することを利用し、半導体発光素子の温度を上記検出した電圧値及び電流値から求めた抵抗値に基づき決定する。そして、半導体発光素子の温度が上昇したときには温度制御回路25は信号線34を介して発熱抵抗駆動回路26に指示を送り、発熱抵抗27に流す電流を減少させ、半導体発光素子の温度を低下させる。逆に、半導体発光素子の温度が低下したときには、温度制御回路25は信号線34を介して発熱抵抗駆動回路26に指示を送り、発熱抵抗27に流す電流を増加させ、半導体発光素子の温度を上昇させる。   From this state, for example, when the temperature of the semiconductor light emitting device changes due to environmental temperature changes or the influence of internal heat generation due to energization, in the conventional back light source, the white balance is lost due to variations in the temperature characteristics of each semiconductor light emitting device was there. On the other hand, in the back light source of the present embodiment, the voltage drop at the semiconductor junction inside the semiconductor light emitting element has a negative temperature characteristic, that is, the resistance value of the semiconductor light emitting element has a negative temperature coefficient. The temperature of the semiconductor light emitting element is determined based on the resistance value obtained from the detected voltage value and current value. When the temperature of the semiconductor light emitting element rises, the temperature control circuit 25 sends an instruction to the heating resistor driving circuit 26 via the signal line 34 to reduce the current flowing through the heating resistor 27 and lower the temperature of the semiconductor light emitting element. . On the contrary, when the temperature of the semiconductor light emitting element is lowered, the temperature control circuit 25 sends an instruction to the heating resistor driving circuit 26 via the signal line 34 to increase the current flowing through the heating resistor 27, so that the temperature of the semiconductor light emitting element is increased. Raise.

本実施形態によれば、上記したように環境温度の変化や、通電による内部発熱の影響を受けることなく、半導体発光素子の温度は略一定に保たれるので、安定した色調の照明光が得られる。 According to the present embodiment, as described above, the temperature of the semiconductor light-emitting element is kept substantially constant without being affected by changes in the environmental temperature and internal heat generation due to energization, so that illumination light with a stable color tone can be obtained. It is done.

実施の形態2.
図2は本発明の実施の形態2の背面光源の回路構成を示すブロック図である。同図において図1に示した回路要素と同じ要素には同じ符号を付し、説明は省略する。
Embodiment 2. FIG.
FIG. 2 is a block diagram showing a circuit configuration of a rear light source according to the second embodiment of the present invention. In the figure, the same elements as those shown in FIG.

実施の形態1においては、発熱抵抗27に流れる電流を制御することにより半導体発光素子の温度を制御するのに対し、本実施形態においては、逆電圧印加手段としての逆電圧印加素子(トランジスタ)40を用いて半導体発光素子に逆電圧を印加するタイミングを制御することにより、半導体発光素子の温度を制御する点で実施の形態1と異なる。以下に本実施形態の動作を説明する。   In the first embodiment, the temperature of the semiconductor light emitting element is controlled by controlling the current flowing through the heating resistor 27, whereas in the present embodiment, a reverse voltage applying element (transistor) 40 serving as a reverse voltage applying means is used. The first embodiment is different from the first embodiment in that the temperature of the semiconductor light emitting element is controlled by controlling the timing of applying the reverse voltage to the semiconductor light emitting element using the. The operation of this embodiment will be described below.

温度制御回路25は端子45を介し、半導体発光素子が導通しているか否か(即ち、順電流が流れているか否か)の情報を外部から得る。そして、半導体発光素子に順電流が流れている間は、不図示の電源の電圧Vcc2(Vcc2>Vcc1)がバイアス抵抗41を介して印加されているトランジスタ40のベースに接続された制御線35の電圧レベルを上げ、それによりトランジスタ40をオフとする。一方、半導体発光素子に順電流が流れていない間は、制御線35の電圧レベルを下げ、トランジスタ40をオンとする。これによりトランジスタ40のエミッタに印加されている電圧Vcc2がコレクタから半導体発光素子のカソードに印加される。電圧Vcc2は電圧Vcc1より大きいので、この間、半導体発光素子に逆電流が流れる。   The temperature control circuit 25 obtains information about whether or not the semiconductor light emitting element is conductive (ie, whether or not forward current is flowing) from the outside via the terminal 45. While a forward current flows through the semiconductor light emitting element, a voltage Vcc2 (Vcc2> Vcc1) of a power source (not shown) is applied to the control line 35 connected to the base of the transistor 40 to which the bias voltage is applied. The voltage level is raised, thereby turning off transistor 40. On the other hand, while no forward current flows through the semiconductor light emitting device, the voltage level of the control line 35 is lowered to turn on the transistor 40. As a result, the voltage Vcc2 applied to the emitter of the transistor 40 is applied from the collector to the cathode of the semiconductor light emitting device. Since the voltage Vcc2 is larger than the voltage Vcc1, a reverse current flows through the semiconductor light emitting element during this period.

本実施の形態2においては、例えば流通角(パルス幅制御時におけるパルス幅)が狭く、半導体発光素子に流れる順電流が少なく、通電による内部発熱が少なくなるときには、逆電流が増加して逆電流による発熱が増加する。逆に流通角が広く、半導体発光素子に流れる順電流が多く、通電による内部発熱が多くなるときには、逆電流が減少して逆電流による発熱が減少する。従って、流通角の広狭による、半導体発光素子の温度変化を少なくすることができる。   In the second embodiment, for example, when the flow angle (pulse width at the time of pulse width control) is narrow, the forward current flowing through the semiconductor light emitting element is small, and the internal heat generation due to energization decreases, the reverse current increases and the reverse current increases. Increases heat generation due to. Conversely, when the flow angle is wide, the forward current flowing through the semiconductor light emitting element is large, and the internal heat generation due to energization increases, the reverse current decreases and the heat generation due to the reverse current decreases. Therefore, the temperature change of the semiconductor light emitting element due to the wide and narrow distribution angle can be reduced.

また、本実施形態においては、実施の形態1と同様、温度制御回路25は、信号線31,32,33を介して検出した半導体発光素子に流れる電流の値及び半導体発光素子のアノード−カソード間の電圧から半導体発光素子の温度を決定し、半導体発光素子の温度が一定に保たれるように、例えば逆電圧印加時間を調整することにより半導体発光素子に流れる逆電流の値を制御する。
本実施の形態2では半導体発光素子の温度制御に素子自身の逆電流を利用しているので温度変化に対する応答が高速であり、温度制御の精度が高い。
In the present embodiment, as in the first embodiment, the temperature control circuit 25 detects the value of the current flowing through the semiconductor light emitting element detected via the signal lines 31, 32, and 33 and between the anode and cathode of the semiconductor light emitting element. The temperature of the semiconductor light emitting element is determined from the voltage of the current, and the value of the reverse current flowing through the semiconductor light emitting element is controlled by adjusting the reverse voltage application time, for example, so that the temperature of the semiconductor light emitting element is kept constant.
In the second embodiment, since the reverse current of the element itself is used for temperature control of the semiconductor light emitting element, the response to the temperature change is fast and the temperature control accuracy is high.

実施の形態3.
図3は本発明の実施の形態3の背面光源の回路構成を示すブロック図である。同図において図1、図2に示した回路要素と同じ要素には同じ符号を付し、説明は省略する。
Embodiment 3 FIG.
FIG. 3 is a block diagram showing a circuit configuration of a back light source according to Embodiment 3 of the present invention. In the figure, the same reference numerals are given to the same elements as those shown in FIGS. 1 and 2, and the description thereof is omitted.

本実施の形態3においては、発熱抵抗27とダイオード50の直列回路を半導体発光素子に並列に接続し、半導体発光素子に順電流が流れていない間に発熱抵抗27に電流を流して発熱させる点で、上記の実施の形態2と異なる。   In the third embodiment, a series circuit of a heating resistor 27 and a diode 50 is connected in parallel to the semiconductor light emitting element, and a current is passed through the heating resistor 27 to generate heat while no forward current flows through the semiconductor light emitting element. Thus, the second embodiment is different from the second embodiment.

本実施の形態3においては、流通角が狭く、半導体発光素子に流れる順電流が少なく、通電による内部発熱が少ないときには、温度制御回路25は発熱抵抗27に流れる電流を増加させ、発熱抵抗27の発熱量を増加させる。逆に流通角が広く、半導体発光素子に流れる順電流が多く、通電による内部発熱が多いときには、発熱抵抗27に流れる電流を減少させ、発熱抵抗27の発熱量を減少させる。従って、実施の形態2と同様、本実施形態においても流通角の広狭にかかわらず、半導体発光素子の温度が略一定に安定化され、安定した色調の照明光が得られる。
本実施の形態3では、発熱抵抗27の発熱を利用するので、逆電流特性のばらつきの大きい半導体発光素子を使用しても照明光の色調を安定化することができる。
In the third embodiment, when the flow angle is narrow, the forward current flowing through the semiconductor light emitting element is small, and the internal heat generation due to energization is small, the temperature control circuit 25 increases the current flowing through the heating resistor 27 and Increase calorific value. Conversely, when the flow angle is wide, the forward current flowing through the semiconductor light emitting element is large, and the internal heat generation due to energization is large, the current flowing through the heating resistor 27 is decreased and the amount of heat generated by the heating resistor 27 is decreased. Therefore, as in the second embodiment, in this embodiment, the temperature of the semiconductor light emitting element is stabilized to be substantially constant regardless of the distribution angle, and illumination light having a stable color tone can be obtained.
In the third embodiment, since the heat generated by the heat generating resistor 27 is used, the color tone of the illumination light can be stabilized even if a semiconductor light emitting element having a large variation in reverse current characteristics is used.

図4に、以上説明した各実施の形態の背面光源を有する表示装置の概略構成を示す。図4において、各半導体発光素子の発した赤色光、緑色光、青色光は、例えば、反射板と拡散板に挟まれた導光体に入射し、該導光体内で多重反射して混合され、それにより得られた白色の照明光が拡散板に対向配置された液晶パネル等の画像形成面を照明する。尚、導光体、拡散板、及び反射板が背面光源の混合手段を構成する。   FIG. 4 shows a schematic configuration of a display device having the back light source of each embodiment described above. In FIG. 4, red light, green light, and blue light emitted from each semiconductor light emitting element enter, for example, a light guide sandwiched between a reflector and a diffuser, and are multiple-reflected and mixed in the light guide. The white illumination light obtained thereby illuminates an image forming surface such as a liquid crystal panel disposed opposite to the diffusion plate. The light guide, the diffusion plate, and the reflection plate constitute a mixing unit for the back light source.

本発明の実施の形態1に係る背面光源の回路構成図である。It is a circuit block diagram of the back surface light source which concerns on Embodiment 1 of this invention. 本発明の実施の形態2に係る背面光源の回路構成図である。It is a circuit block diagram of the back surface light source which concerns on Embodiment 2 of this invention. 本発明の実施の形態3に係る背面光源の回路構成図である。It is a circuit block diagram of the back surface light source which concerns on Embodiment 3 of this invention. 背面光源を備えた表示装置の概略構成を示す図である。It is a figure which shows schematic structure of the display apparatus provided with the back light source.

符号の説明Explanation of symbols

1a,1b,1c 給電端子、 2a,2b,2c 半導体発光素子、 3a,3b,3c 可変型定電流駆動回路、 5a,5b,5c 電流値制御回路、 6a,6b,6c 個別調整入力端子、 7 共通電流増減割合入力端子、 11 接地端子、 22 電流検出抵抗、 25 温度制御回路、 26 発熱抵抗駆動回路、 27 発熱抵抗、 40 トランジスタ(逆電圧印加素子)、 41 バイアス抵抗、 45 導通非導通情報入力端子、 50 ダイオード。   1a, 1b, 1c Power supply terminal, 2a, 2b, 2c Semiconductor light emitting element, 3a, 3b, 3c Variable constant current drive circuit, 5a, 5b, 5c Current value control circuit, 6a, 6b, 6c Individual adjustment input terminal, 7 Common current increase / decrease ratio input terminal, 11 ground terminal, 22 current detection resistor, 25 temperature control circuit, 26 heating resistor drive circuit, 27 heating resistor, 40 transistor (reverse voltage applying element), 41 bias resistor, 45 conduction non-conduction information input Terminal, 50 diodes.

Claims (9)

異なる色の光をそれぞれ発する複数の半導体発光素子と、
前記複数の半導体発光素子のアノード−カソード間に流れる電流の値を個別に調整する電流調整手段と、
前記複数の半導体発光素子のアノード−カソード間に流れる電流と前記アノード−カソード間の電圧とに基づき、前記複数の半導体発光素子の温度を決定する温度検出手段と、
前記複数の半導体発光素子のアノード−カソード間に個別に逆電圧を印加して逆電流を流す逆電圧印加手段と、
前記複数の半導体発光素子のそれぞれについて、当該半導体発光素子のアノード−カソード間に前記順電流が流れていない間に、前記温度検出手段によって決定された前記温度に基づいて当該半導体発光素子の温度を略一定に維持すべく、前記逆電圧印加手段により当該半導体発光素子に対し印加される前記逆電圧を制御する温度制御手段と
を有することを特徴とする表示装置用の背面光源。
A plurality of semiconductor light emitting elements each emitting light of different colors;
Current adjusting means for individually adjusting the value of forward current flowing between the anode and cathode of the plurality of semiconductor light emitting devices;
Temperature detecting means for determining the temperatures of the plurality of semiconductor light emitting elements based on the current flowing between the anode and cathode of the plurality of semiconductor light emitting elements and the voltage between the anode and cathode;
Reverse voltage applying means for individually applying a reverse voltage between the anodes and cathodes of the plurality of semiconductor light emitting elements to flow a reverse current;
For each of the plurality of semiconductor light emitting elements, the temperature of the semiconductor light emitting element is set based on the temperature determined by the temperature detecting means while the forward current does not flow between the anode and the cathode of the semiconductor light emitting element. A back light source for a display device, comprising: temperature control means for controlling the reverse voltage applied to the semiconductor light emitting element by the reverse voltage application means so as to be maintained substantially constant.
前記温度制御手段は、半導体発光素子の近傍に配置された発熱手段を有し、
前記温度制御手段は、前記温度検出手段によって決定された前記温度に基づいて前記発熱手段の発熱量を制御する
ことを特徴とする請求項1に記載の背面光源。
The temperature control means has heat generation means arranged in the vicinity of the semiconductor light emitting element,
The back light source according to claim 1, wherein the temperature control unit controls a heat generation amount of the heat generation unit based on the temperature determined by the temperature detection unit .
前記発熱手段は、抵抗素子からなることを特徴とする請求項2に記載の背面光源。   The back light source according to claim 2, wherein the heat generating unit is formed of a resistance element. 前記温度制御手段は、半導体発光素子の近傍に配置された発熱手段を有し、
前記温度制御手段は、当該半導体発光素子に順電流が流れていない間に、前記発熱手段を駆動して発熱させ、前記温度検出手段によって決定された前記温度に基づいて前記発熱手段の発熱量を制御する
ことを特徴とする請求項1に記載の背面光源。
The temperature control means has heat generation means arranged in the vicinity of the semiconductor light emitting element,
The temperature control means drives the heat generating means to generate heat while no forward current flows through the semiconductor light emitting element, and generates a heat generation amount of the heat generating means based on the temperature determined by the temperature detecting means. back light source according to claim 1, characterized in that control.
前記発熱手段は、前記少なくとも1つの半導体発光素子に並列に接続された抵抗素子とダイオードとの直列回路からなることを特徴とする請求項に記載の背面光源。 5. The back light source according to claim 4 , wherein the heat generating unit includes a series circuit of a resistance element and a diode connected in parallel to the at least one semiconductor light emitting element. 前記複数の半導体発光素子は、赤色、緑色、青色の光をそれぞれ発する3種類の半導体発光素子からなることを特徴とする請求項1からのいずれか一項に記載の背面光源。 Wherein the plurality of semiconductor light emitting devices, red, green, blue backlight source according to claim 1, any one of 5, characterized by comprising the three kinds of semiconductor light emitting elements that emit each light. 前記複数の半導体発光素子が発光ダイオードであることを特徴とする請求項1からのいずれか一項に記載の背面光源。 Back light source according to any one of claims 1 6, wherein the plurality of semiconductor light emitting element is a light emitting diode. 前記複数の半導体発光素子から発する光を混合して白色の照明光を出力する混合手段を更に備えることを特徴とする請求項1からのいずれか一項に記載の背面光源。 Backlight source according to any one of claims 1 to 7, characterized by further comprising a mixing means for outputting a white illumination light by mixing the light emitted from the plurality of semiconductor light emitting elements. 請求項に記載の背面光源と、該背面光源の混合手段から出力される照明光で照明される画像形成パネルとを有することを特徴とする表示装置。 9. A display device comprising: the back light source according to claim 8 ; and an image forming panel illuminated with illumination light output from mixing means of the back light source.
JP2004046217A 2004-02-23 2004-02-23 Rear light source for display device and display device Expired - Fee Related JP4245495B2 (en)

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