JP4222991B2 - Photovoltaic device - Google Patents

Description

  The present invention relates to a photovoltaic device, and more particularly to a photovoltaic device provided with a collector electrode.

  Conventionally, a photovoltaic device is known that includes a light-transmitting conductive film formed on the surface of a semiconductor layer and a collector electrode formed on the surface of the light-transmitting conductive film (for example, a patent Reference 1).

  FIG. 23 is an enlarged perspective view partially showing a structure of a conventional photovoltaic device having the same configuration as that of the photovoltaic device disclosed in Patent Document 1. FIG. 24 is a top view showing an overall configuration of the photovoltaic device according to the conventional example shown in FIG. FIG. 23 shows the structure of a region 601a surrounded by a broken line in FIG. Referring to FIGS. 23 and 24, in a photovoltaic device 601 according to a conventional example, a substantially intrinsic i-type amorphous silicon layer 603 and a p-type are formed on the upper surface of an n-type single crystal silicon substrate 602. An amorphous silicon layer 604 is sequentially formed. A translucent conductive film 605 is formed on a predetermined region of the p-type amorphous silicon layer 604. In addition, a surface-side collector electrode 606 is formed in a predetermined region on the upper surface of the translucent conductive film 605. The surface-side collector electrode 606 is formed so as to contact only the upper surface of the translucent conductive film 605. The front-side collector electrode 606 includes a plurality of comb-shaped electrode portions 606a formed so as to extend in parallel with each other at a predetermined interval, and a bus bar electrode portion 606b that collects currents collected by the comb-shaped electrode portions 606a. It is configured. A substantially intrinsic i-type amorphous silicon layer 607 and an n-type amorphous silicon layer 608 are sequentially formed on the lower surface of the n-type single crystal silicon substrate 602. A translucent conductive film 609 is formed on the lower surface of the n-type amorphous silicon layer 608. Further, on the lower surface of the translucent conductive film 609, a back surface side collector electrode 610 including a plurality of comb-shaped electrode portions 610a and a bus bar electrode portion (not shown) is formed. The back-side collector electrode 610 is formed so as to contact only the lower surface of the translucent conductive film 609.

JP 2003-197943 A

  However, in the photovoltaic device according to the conventional example shown in FIG. 23, the surface-side collector electrode 606 is formed so as to be in contact with only the light-transmitting conductive film 605. When the adhesion to the conductive film 605 is small, the surface-side collector electrode 606 peels off due to stress applied when a tab (electrical wiring) is attached to the surface-side collector electrode 606 or external force applied through the attached tab. There is an inconvenience that there is. Further, since the back-side collector electrode 610 is also in contact with only the translucent conductive film 609, there is a problem in that the back-side collector electrode 610 may be peeled off like the front-side collector electrode 606. For this reason, there has been a problem that the yield when modularizing a plurality of photovoltaic devices by connecting them with tabs is lowered.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to provide a photovoltaic device capable of suppressing a decrease in yield when modularized. That is.

Means for Solving the Problems and Effects of the Invention

  In order to achieve the above object, a photovoltaic device according to a first aspect of the present invention is formed on a surface of a translucent conductive film and the translucent conductive film, and a part thereof is formed on a semiconductor layer. And a collector electrode formed so as to be in contact with each other.

  In the photovoltaic device according to the first aspect, as described above, the collector electrode and the semiconductor are configured such that a part of the collector electrode formed on the surface of the translucent conductive film is in contact with the semiconductor layer. Since the adhesion to the layer is greater than the adhesion between the collector electrode and the translucent conductive film, the collector electrode is peeled off compared to the case where the collector electrode is configured to contact only the translucent conductive film. Can be difficult. That is, since the natural oxide film formed on the surface of the semiconductor layer has higher hydrophilicity than the translucent conductive film, it is considered that the adhesion between the semiconductor layer and the collector electrode is increased. It is thought that it can be made difficult to peel. As a result, it is possible to suppress the separation of the collecting electrode when modularizing by connecting a plurality of photovoltaic devices by means of tabs, thereby suppressing a decrease in yield when the photovoltaic device is modularized. can do.

  In the photovoltaic device according to the first aspect, preferably, the semiconductor layer includes a first semiconductor layer formed under the light-transmitting conductive film, the first semiconductor layer includes a non-single-crystal semiconductor layer, A part of the collector electrode is in contact with the non-single-crystal semiconductor layer. According to this configuration, when the first semiconductor layer includes a crystalline semiconductor layer serving as a power generation layer, the non-single unit is compared with a case where a part of the collector electrode is brought into contact with the crystalline semiconductor layer serving as the power generation layer. In the case where a part of the collector electrode is brought into contact with the crystalline semiconductor layer, carrier recombination is less likely to occur at the interface between the collector electrode and the first semiconductor layer, so that the output characteristics of the photovoltaic device are prevented from deteriorating. be able to. Thereby, it can suppress that the output characteristic of a photovoltaic device falls, suppressing that a collector electrode peels. Non-single crystal is a broad concept including not only amorphous but also microcrystal.

  In the photovoltaic device including the first semiconductor layer, preferably, the first semiconductor layer includes a first conductive type crystalline semiconductor layer and a substantially intrinsic first layer formed on the surface of the crystalline semiconductor layer. A first non-single crystal semiconductor layer and a second non-single crystal semiconductor layer of the second conductivity type formed on the surface of the first non-single crystal semiconductor layer. It is in contact with the semiconductor layer. With this configuration, a substantially intrinsic first non-single crystal semiconductor layer and a second conductivity type second non-single crystal semiconductor layer are sequentially formed on the surface of the first conductivity type crystalline semiconductor layer. In the photovoltaic device thus formed, the collector electrode can be prevented from peeling off. Further, by bringing a part of the collector electrode into contact with the second non-single-crystal semiconductor layer, a part of the collector electrode can be made to contact the second non-single crystal semiconductor layer as compared with the case where a part of the collector electrode is brought into contact with the crystalline semiconductor layer serving as the power generation layer. 2 When contact is made with the non-single-crystal semiconductor layer, carrier recombination is less likely to occur at the interface between the collector electrode and the first semiconductor layer, so that it is possible to suppress degradation of the output characteristics of the photovoltaic device. .

  In the photovoltaic device including the first semiconductor layer, preferably, the collector electrode includes a first electrode part for collecting current and a second electrode part for collecting the current collected by the first electrode part. A part of the second electrode portion is in contact with the first semiconductor layer. According to this configuration, even when an external force is easily applied to the second electrode part through the tab by attaching the tab to the second electrode part, the peeling of the second electrode part can be suppressed. It can suppress that an electrode peels from a photovoltaic apparatus.

  In this case, preferably, a portion in the vicinity of the end portion in the longitudinal direction of the second electrode portion is in contact with the first semiconductor layer. If comprised in this way, since the adhesiveness of the part near the edge part of the 2nd electrode part which is often the starting point of peeling can be improved, a collector electrode peels easily from a photovoltaic apparatus. Can be suppressed.

  In the configuration in which the portion in the vicinity of the end portion in the longitudinal direction of the second electrode portion is in contact with the first semiconductor layer, the portion in the vicinity of the end portions on both sides in the longitudinal direction of the second electrode portion is preferably the first semiconductor layer. Touching. If comprised in this way, since the adhesiveness of the vicinity of the edge part of the both sides of the 2nd electrode part at the longitudinal direction can be improved, it can suppress that a collector electrode peels from a photovoltaic apparatus more. it can.

  In the photovoltaic device including the first semiconductor layer, preferably, the light-transmitting conductive film includes a concave opening as viewed in plan in a part of the outer surface of the light-transmitting conductive film, and the collector electrode is The first semiconductor layer is in contact with the transparent conductive film through the opening. If comprised in this way, it is because the area | region which is not covered with the translucent conductive film of the outer peripheral part vicinity of a 1st semiconductor layer is small, it is a collector electrode in the area | region which is not covered with the translucent conductive film Even when it is difficult to contact the collector, the collector electrode can be easily brought into contact with the first semiconductor layer through the opening of the translucent conductive film.

  In this case, preferably, at least a part of the opening is formed in a region shielded by the collector electrode. If comprised in this way, at least one part of an opening part can be formed in the area | region which does not contribute to the current collection of a translucent conductive film. Thereby, since it can suppress reducing the area | region which contributes to the current collection of a translucent electrically conductive film in order to make a current collection electrode contact a 1st semiconductor layer, it suppresses that current collection efficiency falls. be able to. For this reason, it can suppress that the output characteristic of a photovoltaic apparatus falls.

  In the photovoltaic device including the first semiconductor layer, preferably, the light-transmitting conductive film includes a groove, and a part of the collector electrode is exposed in the groove along the groove of the light-transmitting conductive film. It is in contact with the first semiconductor layer. If comprised in this way, it is because the area | region which is not covered with the translucent conductive film of the outer peripheral part vicinity of a 1st semiconductor layer is small, it is a collector electrode in the area | region which is not covered with the translucent conductive film Even when it is difficult to contact the collector electrode, the collector electrode can be easily brought into contact with the first semiconductor layer through the groove of the translucent conductive film.

  In this case, preferably, at least a part of the groove is formed in a region shielded by the collector electrode. If comprised in this way, at least one part of a groove part can be formed in the area | region which does not contribute to the current collection of a translucent electrically conductive film. Thereby, since it can suppress reducing the area | region which contributes to the current collection of a translucent electrically conductive film in order to make a current collection electrode contact a 1st semiconductor layer, it suppresses that current collection efficiency falls. be able to. For this reason, it can suppress that the output characteristic of a photovoltaic apparatus falls.

  In the photovoltaic device according to the first aspect, preferably, the semiconductor layer includes a first conductive type crystalline semiconductor layer and a substantially intrinsic first non-single layer formed on the surface of the crystalline semiconductor layer. Including a crystalline semiconductor layer and a second non-single crystalline semiconductor layer of the second conductivity type formed on the surface of the first non-single crystalline semiconductor layer, and a part of the collector electrode is in contact with the crystalline semiconductor layer Is formed. If comprised in this way, compared with the case where a part of collector electrode contacts only a translucent conductive film, a collector electrode can be made hard to peel.

  In the photovoltaic device according to the first aspect, preferably, the semiconductor layer includes a second semiconductor layer formed on the translucent conductive film, and the collector electrode is formed so as to contact the second semiconductor layer. Has been. If comprised in this way, it can make it difficult to peel a collector electrode easily by the 2nd semiconductor layer formed on the translucent conductive film.

  A photovoltaic device according to a second aspect of the present invention is formed on a semiconductor layer, a translucent conductive film formed on the surface of the semiconductor layer, a surface of the translucent conductive film, and one of them. And a collector electrode formed so that the portion is in contact with the semiconductor layer.

  In the photovoltaic device according to the second aspect, as described above, the collector electrode and the semiconductor are configured such that a part of the collector electrode formed on the surface of the translucent conductive film is in contact with the semiconductor layer. Since the adhesion to the layer is greater than the adhesion between the collector electrode and the translucent conductive film, the collector electrode is peeled off compared to the case where the collector electrode is configured to contact only the translucent conductive film. Can be difficult. That is, since the natural oxide film formed on the surface of the semiconductor layer has higher hydrophilicity than the translucent conductive film, it is considered that the adhesion between the semiconductor layer and the collector electrode is increased. It is thought that it can be made difficult to peel. As a result, it is possible to suppress the separation of the collecting electrode when modularizing by connecting a plurality of photovoltaic devices by means of tabs, thereby suppressing a decrease in yield when the photovoltaic device is modularized. can do.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is an enlarged perspective view partially showing the structure of the photovoltaic device according to the first embodiment of the present invention. FIG. 2 is a top view showing the overall configuration of the photovoltaic device according to the first embodiment shown in FIG. FIG. 3 is a cross-sectional view taken along the line 100-100 of the photovoltaic device according to the first embodiment shown in FIG. FIG. 4 is a cross-sectional view taken along line 150-150 of the photovoltaic device according to the first embodiment shown in FIG. FIG. 1 shows the structure of a region 1a surrounded by a broken line in FIG. First, the structure of the photovoltaic device according to the first embodiment will be described with reference to FIGS.

  In the photovoltaic device 1 according to the first embodiment, as shown in FIG. 1, an n-type single crystal silicon substrate 2 having a resistivity of about 1 Ω · cm and a thickness of about 300 μm and having a (100) plane is provided. A substantially intrinsic i-type amorphous silicon layer 3 having a thickness of about 5 nm is formed on the upper surface. The n-type single crystal silicon substrate 2 is an example of the “semiconductor layer”, “first semiconductor layer”, and “crystalline semiconductor layer” of the present invention, and the i-type amorphous silicon layer 3 is the present invention. The “semiconductor layer”, “first semiconductor layer”, and “first non-single-crystal semiconductor layer” of FIG. Further, the n-type single crystal silicon substrate 2 has a function as a power generation layer. A p-type amorphous silicon layer 4 having a thickness of about 5 nm is formed on the i-type amorphous silicon layer 3. The p-type amorphous silicon layer 4 is an example of the “semiconductor layer”, “first semiconductor layer”, and “second non-single-crystal semiconductor layer” in the present invention.

A translucent conductive film 5 having a thickness of about 80 nm to about 100 nm is formed on the p-type amorphous silicon layer 4. As shown in FIG. 2, the translucent conductive film 5 is formed slightly smaller than the p-type amorphous silicon layer 4 in plan view. That is, a region that is not covered with the translucent conductive film 5 is provided in the vicinity of the outer peripheral portion of the upper surface of the p-type amorphous silicon layer 4. Further, the light-transmitting conductive film 5 is composed of ITO (Indium Tin Oxide) film made of InO ₂ containing SnO ₂ to about 5 wt%. In addition, a surface-side collector electrode 6 made of silver (Ag) is formed in a predetermined region on the upper surface of the translucent conductive film 5. The surface-side collector electrode 6 is an example of the “collector electrode” in the present invention. As shown in FIGS. 1 and 2, the collector electrode 6 includes a plurality of comb-shaped electrode portions 6a formed so as to extend in parallel with each other at a predetermined interval, and the current collected by the comb-shaped electrode portions 6a. It is comprised by the bus-bar electrode part 6b to gather. The comb-shaped electrode portion 6a is an example of the “first electrode portion” in the present invention, and the bus bar electrode portion 6b is an example of the “second electrode portion” in the present invention. The comb-shaped electrode portion 6a has a thickness of about 10 μm to about 50 μm and a width of about 100 μm to about 500 μm. The bus bar electrode portion 6b has a thickness of about 10 μm to about 100 μm and a width of about 1.3 mm to about 3 mm.

  Here, in the first embodiment, the portion in the vicinity of both ends in the longitudinal direction of the bus bar electrode portion 6b is the upper surface in the vicinity of the outer peripheral portion of the p-type amorphous silicon layer 4, as shown in FIGS. It is in contact with the region not covered with the translucent conductive film 5. Note that a natural oxide film having a hydrophilic property higher than that of the translucent conductive film 5 is formed in a region not covered with the translucent conductive film 5 on the upper surface in the vicinity of the outer peripheral portion of the p-type amorphous silicon layer 4. Therefore, it is considered that the adhesiveness of the portion in the vicinity of the end of the bus bar electrode portion 6b that is in contact with this region is larger than the adhesiveness when it is in contact with the translucent conductive film 5.

  On the lower surface of the n-type single crystal silicon substrate 2, a substantially intrinsic i-type amorphous silicon layer 7 having a thickness of about 5 nm and an n-type amorphous silicon layer 8 having a thickness of about 5 nm are provided. Are sequentially formed. The i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 are examples of the “semiconductor layer” and “first semiconductor layer” of the present invention. On the lower surface of the n-type amorphous silicon layer 8, a translucent conductive film 9 made of an ITO film having a thickness of about 80 nm to about 100 nm is formed. Further, on the lower surface of the translucent conductive film 9, as shown in FIGS. 1 and 4, a plurality of comb-shaped electrode portions 10a formed to extend in parallel with each other at a predetermined interval, and a comb-shaped electrode portion A back-side collector electrode 10 is formed that includes a bus bar electrode portion 10b that collects the current collected by 10a. The comb electrode portion 10a and the bus bar electrode portion 10b are examples of the “first electrode portion” and the “second electrode portion” in the present invention, respectively. The back-side collector electrode 10 is an example of the “collector electrode” in the present invention.

  In the first embodiment, as shown in FIG. 3, the portion in the vicinity of both ends in the longitudinal direction of the bus bar electrode portion 10 b of the back surface side collector electrode 10 is in the vicinity of the outer peripheral portion of the n-type amorphous silicon layer 8. Is in contact with a region not covered by the translucent conductive film 9 on the lower surface of the substrate. Note that a natural oxide film having a hydrophilic property higher than that of the light-transmitting conductive film 9 is formed in a region not covered with the light-transmitting conductive film 9 on the lower surface near the outer peripheral portion of the n-type amorphous silicon layer 8. Therefore, it is considered that the adhesion of the portion in the vicinity of the end of the bus bar electrode portion 10b that is in contact with this region is larger than the adhesion when it is in contact with the translucent conductive film 9. Further, the i-type amorphous silicon layer 7, the n-type amorphous silicon layer 8, the translucent conductive film 9, and the back-side collector electrode 10 other than those described above have the i-type amorphous silicon layer described above, respectively. 3. The configuration is the same as that of the p-type amorphous silicon layer 4, the translucent conductive film 5, and the front-side collector electrode 6.

  In the first embodiment, as described above, by configuring the portions in the vicinity of both ends in the longitudinal direction of the bus bar electrode portion 6b of the surface side collector electrode 6 to be in contact with the p-type amorphous silicon layer 4. Since the adhesion between the surface-side collector electrode 6 and the p-type amorphous silicon layer 4 is greater than the adhesion between the surface-side collector electrode 6 and the translucent conductive film 5, the surface-side collector electrode 6 is transparent. Compared with the case where the photoconductive film 5 is contacted only, the surface-side collector electrode 6 can be made difficult to peel off. That is, since the natural oxide film formed on the surface of the p-type amorphous silicon layer 4 has higher hydrophilicity than the translucent conductive film 5, the p-type amorphous silicon layer 4 and the surface-side collector electrode 6. It is considered that the surface-side collector electrode 6 can be made difficult to peel off. In the case of the front surface side collector electrode 6, the back surface side collector electrode 10 is configured such that portions near both ends in the longitudinal direction of the bus bar electrode portion 10 b are in contact with the n-type amorphous silicon layer 8. Similarly to the above, it is possible to make it difficult to peel off the back side collector electrode 10. Thereby, since it can suppress that the surface side collector electrode 6 and the back surface side collector electrode 10 peel when modularizing by connecting the some photovoltaic device 1 with a tab, the photovoltaic device 1 Yield drop when modularizing can be suppressed.

  Further, in the first embodiment, the surface side collector electrode 6 serves as a power generation layer by bringing a portion near the end of the bus bar electrode portion 6b of the surface side collector electrode 6 into contact with the p-type amorphous silicon layer 4. Compared with the case where the surface-side collector electrode 6 is brought into contact with the p-type amorphous silicon layer 4, the carrier is regenerated at the interface between the surface-side collector electrode 6 and the semiconductor layer. Since the coupling is difficult to occur, it is possible to suppress the output characteristics of the photovoltaic device 1 from being deteriorated.

  In the first embodiment, the portions near the ends on both sides in the longitudinal direction of the bus bar electrode portions 6b and 10b of the front-side collector electrode 6 and the back-side collector electrode 10 are respectively formed as the p-type amorphous silicon layer 4 and the n-type. By making contact with the amorphous silicon layer 8, it is possible to improve the adhesion of portions in the vicinity of both ends in the longitudinal direction of the bus bar electrode portions 6 b and 10 b, which are often the starting points of peeling, and thus easily Further, peeling of the front side collector electrode 6 and the back side collector electrode 10 can be suppressed.

  FIG. 5 is a top view for explaining the manufacturing process for the photovoltaic device according to the first embodiment of the present invention. Next, with reference to FIGS. 1-5, the manufacturing process of the photovoltaic apparatus by 1st Embodiment is demonstrated.

First, the n-type single crystal silicon substrate 2 (see FIG. 1) having a resistivity of about 1 Ω · cm and a thickness of about 300 μm and having a (100) plane is cleaned to remove impurities. And using RF plasma CVD method, frequency: about 13.56 MHz, formation temperature: about 100 ° C. to about 300 ° C., reaction pressure: about 5 Pa to about 100 Pa, RF power: about 1 mW / cm ² to about 500 mW / cm ² conditions, on the n-type single crystal silicon substrate 2, are sequentially deposited i-type amorphous silicon layer 3 and the p-type amorphous silicon layer 4 having a thickness of respectively about 5 nm. Thereby, a pin junction is formed. Note that p-type dopants for forming the p-type amorphous silicon layer 4 include group III elements B, Al, Ga, and In. When the p-type amorphous silicon layer 4 is formed, a compound gas containing at least one of the above-described p-type dopants is mixed with a source gas such as SiH ₄ (silane) gas to thereby form a p-type amorphous silicon layer. 4 can be formed.

  Next, as shown in FIGS. 3 and 4, an i-type amorphous silicon layer 7 having a thickness of about 5 nm and an n-type amorphous film having a thickness of about 5 nm are formed on the lower surface of the n-type single crystal silicon substrate 2. The quality silicon layer 8 is formed in this order. The n-type dopant used when forming the n-type amorphous silicon layer 8 includes P, N, As, and Sb, which are Group 5 elements. When the n-type amorphous silicon layer 8 is formed, the n-type amorphous silicon layer 8 can be formed by mixing a compound gas containing at least one of the above-described n-type dopants into the source gas. Other processes for forming the n-type amorphous silicon layer 8 and the i-type amorphous silicon layer 7 are the same as the processes for forming the p-type amorphous silicon layer 4 and the i-type amorphous silicon layer 3 described above, respectively. It is the same.

Next, translucent conductive films 5 and 9 made of an ITO film are formed on each of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 by sputtering. At this time, the translucent conductive films 5 and 9 are formed in regions that are slightly smaller than the regions where the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 are formed, respectively. When forming the translucent conductive films 5 and 9, a target made of a sintered body of In ₂ O ₃ powder containing about 5% by mass of SnO ₂ powder is used as a chamber (not shown) of a sputtering apparatus (not shown). Installed in the cathode (not shown). In this case, it is possible to change the amount of Sn in the ITO film by changing the amount of SnO ₂ powder. The amount of Sn relative to In is preferably about 1% by mass to about 10% by mass. The sintered density of the target is preferably about 90% or more. The translucent conductive films 5 and 9 are formed using a sputtering apparatus capable of applying a strong magnetic field of about 1000 Gauss with a magnet.

Then, after covering a predetermined region of the surface near the outer periphery of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 with a metal mask, the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer The n-type single crystal silicon substrate 2 on which the silicon layer 8 is formed is disposed in parallel with the cathode. Then, after evacuating the chamber (not shown), the substrate is heated using a heater (not shown) until the substrate temperature reaches about 200 ° C. Then, in a state where the substrate temperature is about 200 ° C., a mixed gas of Ar gas and O ₂ gas is flowed to maintain the pressure at about 0.4 Pa to about 1.3 Pa, and at the cathode, about 0.5 kW to about Discharging is started by applying DC power of 2 kW. In this case, the deposition rate is about 10 nm / min to about 80 nm / min with the n-type single crystal silicon substrate 2 being stationary with respect to the cathode. In this way, as shown in FIGS. 3 to 5, the translucent conductive films 5 and 9 are placed more than the respective formation regions of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8, respectively. It is formed in a small area until the thickness is about 80 nm to about 100 nm.

  Next, the surface-side collector electrode 6 is formed by applying an Ag paste in which silver (Ag) fine powder is kneaded into an epoxy resin to a predetermined region on the upper surface of the translucent conductive film 5 using a screen printing method. To do. At this time, the comb-shaped electrode portion 6a of the surface-side collector electrode 6 has a thickness of about 10 μm to about 50 μm and a width of about 100 μm to about 500 μm, and the bus bar electrode portion 6b has a thickness of about 10 μm to about 100 μm, It is formed to have a width of 1.3 mm to about 3 mm.

  In the first embodiment, the region in the vicinity of both ends in the longitudinal direction of the bus bar electrode portion 6b is not covered with the translucent conductive film 5 on the upper surface in the vicinity of the outer peripheral portion of the p-type amorphous silicon layer 4. It forms so that it may touch. Thereafter, the Ag paste is cured by baking at about 200 ° C. for about 80 minutes. Accordingly, as shown in FIG. 2, a plurality of comb-shaped electrode portions 6a formed so as to extend in parallel with each other at a predetermined interval, and a bus bar electrode portion 6b for collecting currents collected by the comb-shaped electrode portions 6a A surface side collector electrode 6 is formed.

  Finally, using a screen printing method, a plurality of comb-shaped electrode portions 10a formed on the lower surface of the translucent conductive film 9 so as to extend in parallel with each other at a predetermined interval are collected by the comb-shaped electrode portions 10a. A back-side collector electrode 10 comprising the bus bar electrode portion 10b for collecting the currents is formed. The back side collector electrode 10 is formed in the same manner as the front side collector electrode 6 described above. Thus, the photovoltaic device 1 according to the present embodiment shown in FIG. 1 is formed.

(Second Embodiment)
FIG. 6 is a top view showing the overall configuration of the photovoltaic device according to the second embodiment of the present invention. FIG. 7 is a sectional view taken along line 200-200 of the photovoltaic device according to the second embodiment shown in FIG. FIG. 8 is a sectional view taken along the line 250-250 of the photovoltaic device according to the second embodiment shown in FIG. Next, the structure of the photovoltaic device according to the second embodiment will be described with reference to FIGS.

  In the photovoltaic device 11 according to the second embodiment, as shown in FIGS. 6 and 7, unlike the photovoltaic device 1 according to the first embodiment (see FIG. 1), the front-side collector electrode 16 and the back-side collector. The portions in the vicinity of both ends in the longitudinal direction of each of the bus bar electrode portions 16b and 20b of the electrode 20 are concave openings as viewed in plan formed on the outer surfaces of the translucent conductive films 15 and 19, respectively. The p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 are in contact with each other through 15a and 19a. Note that the surfaces of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 exposed in the openings 15a and 19a are more hydrophilic than the translucent conductive films 15 and 19. Since the natural oxide film is formed, the adhesion of the portions in the vicinity of the ends of the bus bar electrode portions 16b and 20b in contact with these surfaces is the adhesion in the case of contacting with the translucent conductive films 15 and 19, respectively. It is thought that it is getting bigger.

  Further, the openings 15a and 19a of the light-transmitting conductive films 15 and 19 are formed in regions shielded by the bus bar electrode portions 16b and 20b and tabs (not shown) attached on the bus bar electrode portions 16b and 20b. Is formed. In the second embodiment, as shown in FIGS. 6 to 8, the translucent conductive films 15 and 19 on the upper surfaces near the outer peripheral portions of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8. The area of the region not covered with is configured to be smaller than that of the photovoltaic device 1 according to the first embodiment (see FIGS. 2 to 4). That is, the photovoltaic device 11 according to the second embodiment is configured to have a larger area contributing to the current collection of the transparent conductive films 15 and 19 than the photovoltaic device 1 according to the first embodiment. Has been. Thereby, in the photovoltaic apparatus 11 by 2nd Embodiment, current collection efficiency improves compared with the photovoltaic apparatus 1 by above-described 1st Embodiment. The other structure of the photovoltaic device according to the second embodiment is the same as the structure of the photovoltaic device according to the first embodiment described above.

  FIG. 9 is a top view for explaining the manufacturing process for the photovoltaic device according to the second embodiment of the present invention. Next, with reference to FIGS. 6-9, the manufacturing process of the photovoltaic apparatus by 2nd Embodiment is demonstrated.

  First, as shown in FIGS. 7 and 8, after sequentially laminating an i-type amorphous silicon layer 3 and a p-type amorphous silicon layer 4 on the upper surface of an n-type single crystal silicon substrate 2, an n-type single crystal An i-type amorphous silicon layer 7 and an n-type amorphous silicon layer 8 are sequentially stacked on the lower surface of the silicon substrate 2.

  Thereafter, in the second embodiment, as shown in FIGS. 7 to 9, an outer surface is formed on each surface of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 using a metal mask. The translucent conductive films 15 and 19 having concave openings 15a and 19a as viewed in plan are respectively formed.

  Next, as shown in FIGS. 6 to 8, the surface-side collector electrode 16 composed of the comb-shaped electrode portion 16 a and the bus bar electrode portion 16 b is formed in a predetermined region on the upper surface of the translucent conductive film 15 by screen printing. After the formation, a back-side collector electrode 20 including a comb-shaped electrode portion (not shown) and a bus bar electrode portion 20b is formed in a predetermined region on the lower surface of the translucent conductive film 19.

  At this time, in the second embodiment, the portions in the vicinity of both ends in the longitudinal direction of the bus bar electrode portion 16b are in contact with the p-type amorphous silicon layer 4 through the openings 15a of the translucent conductive film 15. In addition, the bus bar electrode portion 20b is formed so that the portions in the vicinity of both ends in the longitudinal direction are in contact with the n-type amorphous silicon layer 8 through the openings 19a of the translucent conductive film 19. The manufacturing process of the photovoltaic device 11 according to the second embodiment other than the above is the same as the manufacturing process of the photovoltaic device 1 according to the first embodiment described above.

  In the second embodiment, as described above, the portions near the ends on both sides in the longitudinal direction of the bus bar electrode portion 16b of the surface-side collector electrode 16 are p-type amorphous through the openings 15a of the translucent conductive film 15. When the p-type amorphous silicon layer 4 is brought into contact with the porous silicon layer 4, the area of the upper surface in the vicinity of the outer periphery of the p-type amorphous silicon layer 4 that is not covered with the translucent conductive film 15 is small. Even when it is difficult to bring the surface side collector electrode 16 into contact with the region not covered with the conductive film 15, the surface side collector electrode 16 can be easily brought into contact with the p-type amorphous silicon layer 4 through the opening 15a. Can do.

  In the second embodiment, the transparent conductive film 15 is formed by forming the opening 15a in a region shielded by the bus bar electrode part 16b of the transparent conductive film 15 and the tab attached to the bus bar electrode part 16b. The opening 15a can be formed in a region that does not contribute to current collection. Thereby, in order to make the surface side collector electrode 16 contact the p-type amorphous silicon layer 4, it is not necessary to reduce the region contributing to the current collection of the translucent conductive film 15, so that the current collection efficiency is lowered. Can be suppressed. For this reason, it can suppress that the output characteristic of a photovoltaic apparatus falls.

  The effects of the second embodiment other than those described above are the same as the effects of the first embodiment described above.

(Third embodiment)
FIG. 10 is a top view showing the overall configuration of the photovoltaic device according to the third embodiment of the present invention. FIG. 11 is a cross-sectional view taken along the line 300-300 of the photovoltaic device according to the third embodiment shown in FIG. FIG. 12 is a cross-sectional view taken along line 350-350 of the photovoltaic device according to the third embodiment shown in FIG. Next, the structure of the photovoltaic device according to the third embodiment will be described with reference to FIGS.

  In the photovoltaic device 21 according to the third embodiment, as shown in FIGS. 10 to 12, unlike the photovoltaic device 1 according to the first embodiment (see FIG. 1), the transparent conductive films 25 and 29 are provided in the transparent conductive films 25 and 29. The two linear groove portions 25a and 29a are formed along the longitudinal direction of the bus bar electrode portions 26b and 30b, respectively. Then, along the groove portions 25a and 29a, part of the bus bar electrode portions 26b and 30b of the front-side collector electrode 26 and the rear-side collector electrode 30 are respectively the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8. Touching. Note that the surface of each of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 exposed in the groove portions 25a and 29a is naturally more hydrophilic than the translucent conductive films 25 and 29. Since the oxide film is formed, the adhesiveness of a part of the bus bar electrode portions 26b and 30b that are in contact with these surfaces is larger than the adhesiveness when they are in contact with the translucent conductive films 25 and 29, respectively. It is thought that.

  Further, the groove portions 25a and 29a of the translucent conductive films 25 and 29 are formed in a region shielded by the bus bar electrode portions 26b and 30b and tabs (not shown) attached to the bus bar electrode portions 26b and 30b. Yes. In the third embodiment, as shown in FIGS. 10 to 12, the translucent conductive films 25 and 29 on the upper surfaces near the outer peripheral portions of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8. The area of the region not covered with is configured to be smaller than that of the photovoltaic device 1 according to the first embodiment (see FIGS. 2 to 4). That is, the photovoltaic device 21 according to the third embodiment is configured to have a larger area that contributes to the current collection of the transparent conductive films 25 and 29 than the photovoltaic device 1 according to the first embodiment. Has been. Thereby, in the photovoltaic apparatus 21 by 3rd Embodiment, current collection efficiency improves compared with the photovoltaic apparatus 1 by above-described 1st Embodiment. The remaining structure of the photovoltaic device 21 according to the third embodiment is the same as that of the photovoltaic device 1 according to the first embodiment described above.

  FIG. 13 is a top view for explaining the manufacturing process for the photovoltaic device according to the third embodiment of the present invention. Next, with reference to FIGS. 10-13, the manufacturing process of the photovoltaic apparatus by 3rd Embodiment is demonstrated.

  First, as shown in FIGS. 11 and 12, an i-type amorphous silicon layer 3 and a p-type amorphous silicon layer 4 are sequentially stacked on the upper surface of an n-type single crystal silicon substrate 2, and then an n-type single crystal. An i-type amorphous silicon layer 7 and an n-type amorphous silicon layer 8 are sequentially stacked on the lower surface of the silicon substrate 2. Thereafter, as shown in FIGS. 11 to 13, the p-type amorphous silicon layer 4 on the surfaces of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 and the metal mask are used. Translucent conductive films 25 and 29 are formed in regions slightly smaller than the region where n-type amorphous silicon layer 8 is formed.

  Thereafter, in the third embodiment, as shown in FIGS. 12 and 13, the two linear grooves 25 a and 29 a are respectively formed by removing a part of the translucent conductive films 25 and 29 using an excimer laser. Form.

  Next, after forming the surface side collector electrode 26 which consists of the comb-shaped electrode part 26a and the bus-bar electrode part 26b in the predetermined area | region on the upper surface of the translucent conductive film 25 using the screen printing method, the translucent conductive film 29 A back-side collector electrode 30 comprising a comb-shaped electrode portion (not shown) and a bus bar electrode portion 30b is formed in a predetermined region on the lower surface of the substrate. At this time, the bus bar electrode portion 26 b is formed so as to extend along each of the two groove portions 25 a of the translucent conductive film 25, and the bus bar electrode portion 30 b is formed in each of the two groove portions 29 a of the translucent conductive film 29. It forms so that it may extend along. As a result, the bus bar electrode portions 26b and 30b correspond to the p-type amorphous silicon layer 4 and the n-type non-contact exposed in the groove portions 25a and 29a along the groove portions 25a and 29a of the translucent conductive films 25 and 29, respectively. Contact the crystalline silicon layer 8. Other manufacturing processes of the photovoltaic device 21 according to the third embodiment are the same as the manufacturing process of the photovoltaic device 1 according to the first embodiment described above.

  In the third embodiment, as described above, a part of the bus bar electrode portion 26b of the surface side collector electrode 26 is brought into contact with the p-type amorphous silicon layer 4 along the groove portion 25a of the translucent conductive film 25. The p-type amorphous silicon layer 4 is not covered with the translucent conductive film 25 due to the small area of the region not covered with the translucent conductive film 25 on the upper surface in the vicinity of the outer peripheral portion. Even when it is difficult to bring the surface side collector electrode 26 into contact with the region, the surface side collector electrode 26 can be easily brought into contact with the p-type amorphous silicon layer 4 through the groove 25a.

  In the third embodiment, the groove portion 25a is formed in a region shielded by the bus bar electrode portion 26b of the translucent conductive film 25 and the tab attached to the bus bar electrode portion 26b, thereby forming the translucent conductive film 25. The groove 25a can be formed in a region that does not contribute to current collection. Thereby, in order to make the surface side collector electrode 26 contact the p-type amorphous silicon layer 4, it is not necessary to reduce the region contributing to the current collection of the translucent conductive film 25. Can be suppressed. For this reason, it can suppress that the output characteristic of a photovoltaic apparatus falls.

  The effects of the third embodiment other than those described above are the same as the effects of the first embodiment described above.

(Fourth embodiment)
FIG. 14 is an enlarged perspective view partially showing the structure of the photovoltaic device according to the fourth embodiment of the present invention. FIG. 15 is a top view showing the overall configuration of the photovoltaic device according to the fourth embodiment shown in FIG. FIG. 16 is a cross-sectional view taken along the line 400-400 of the photovoltaic device according to the fourth embodiment shown in FIG. FIG. 17 is a cross-sectional view taken along the line 450-450 of the photovoltaic device according to the fourth embodiment shown in FIG. FIG. 18 is an enlarged cross-sectional view showing the structure of the bus bar electrode portion of the photovoltaic device according to the fourth embodiment shown in FIG. FIG. 14 shows the structure of a region 31a surrounded by a broken line in FIG. Next, the structure of the photovoltaic device according to the fourth embodiment will be described with reference to FIGS.

  In the photovoltaic device 31 according to the fourth embodiment, as shown in FIG. 14 and FIGS. 16 to 18, unlike the photovoltaic device 1 according to the first embodiment (see FIG. 1), the transparent conductive film 5. Two amorphous silicon layers 32 are formed at a predetermined interval in the predetermined region above. The amorphous silicon layer 32 is an example of the “semiconductor layer” and “second semiconductor layer” in the present invention. Further, the amorphous silicon layer 32 is formed in a substantially intrinsic i-type, and has a width of about 0.5 mm and a thickness of about 1.5 nm. The bus bar electrode portions 36 b of the surface side collector electrode 36 are formed on the two amorphous silicon layers 32, respectively. As shown in FIG. 16, the bus bar electrode portion 36 b is formed so as to be in contact with the entire surface in the longitudinal direction of the surface of the amorphous silicon layer 32. As shown in FIG. 18, the bus bar electrode portion 36b is formed so as to cover the upper surface and side surfaces of the amorphous silicon layer 32, and the amorphous silicon layer 32 on the upper surface of the translucent conductive film 5 is formed. It forms so that the area | region of the both sides of the formed area | region may also be contacted. That is, the bus bar electrode portion 36b is formed to cover the amorphous silicon layer 32 with a width (about 1.5 mm) and a thickness (about 40 μm) larger than the amorphous silicon layer 32. Further, on the lower surface of the transparent conductive film 9 on the lower surface side of the photovoltaic device 31, as shown in FIGS. 16 and 17, an amorphous material having a structure similar to that of the amorphous silicon layer 32 is used. A silicon layer 33 is formed. A bus bar electrode portion 40b having the same structure as the bus bar electrode portion 36b is formed so as to be in contact with the entire surface in the longitudinal direction of the surface of the amorphous silicon layer 33. The bus bar electrode portion 40b is formed so as to cover the lower surface and the side surface of the amorphous silicon layer 33, and on both sides of the region where the amorphous silicon layer 33 is formed on the lower surface of the translucent conductive film 9. It is formed so that it may also contact. That is, the bus bar electrode portion 40 b is formed to cover the amorphous silicon layer 33 with a width (about 1.5 mm) and thickness (about 40 μm) larger than the amorphous silicon layer 33.

  Note that a natural oxide film having a higher hydrophilicity than the translucent conductive films 5 and 9 is formed on the surfaces of the amorphous silicon layers 32 and 33. Therefore, the surfaces of the amorphous silicon layers 32 and 33 are formed. It is considered that the adhesiveness of the bus bar electrode portions 36b and 40b that are in contact with each other is larger than the adhesiveness when they are in contact with the translucent conductive films 5 and 9, respectively. The remaining structure of the photovoltaic device 31 according to the fourth embodiment is similar to the structure of the photovoltaic device 1 according to the first embodiment described above.

  Next, with reference to FIGS. 14-18, the manufacturing process of the photovoltaic apparatus by 4th Embodiment is demonstrated.

  In the fourth embodiment, as shown in FIGS. 15 to 17, the i-type amorphous silicon layer 3 and the p-type amorphous material are formed on the upper surface of the n-type single crystal silicon substrate 2 in the same manner as the first embodiment. After sequentially stacking the porous silicon layer 4, the i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 are sequentially stacked on the lower surface of the n-type single crystal silicon substrate 2. Thereafter, formation of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 on the surface of each of the p-type amorphous silicon layer 4 and the n-type amorphous silicon layer 8 using a metal mask. Translucent conductive films 5 and 9 are formed in regions that are slightly smaller than the regions, respectively.

  Next, in the fourth embodiment, two amorphous silicon layers 32 are formed in a predetermined region on the upper surface of the translucent conductive film 5 at a predetermined interval using a metal mask or the like. At this time, the amorphous silicon layer 32 is i-type and has a width of about 0.5 mm and a thickness of about 1.5 nm. Then, in the same manner as the amorphous silicon layer 32, two amorphous silicon layers 33 are formed in a predetermined region on the lower surface of the translucent conductive film 9 with a predetermined interval.

  Next, the surface-side collector electrode 36 composed of the comb-shaped electrode portion 36a and the bus bar electrode portion 36b is formed on the translucent conductive film 5 and the two amorphous silicon layers 32 by screen printing. At this time, the bus bar electrode portion 36b has a larger width (about 1.5 mm) and thickness (about 40 μm) than the amorphous silicon layer 32, and is in contact with the entire surface in the longitudinal direction of the surface of the amorphous silicon layer 32. At the same time, the amorphous silicon layer 32 is formed so as to cover the upper surface and side surfaces thereof. In addition, the bus bar electrode portion 36b is formed so as to be in contact with the regions on both sides of the region where the amorphous silicon layer 32 is formed on the upper surface of the translucent conductive film 5. Thereafter, the back-side collector electrode 40 composed of the comb-shaped electrode portion 40a and the bus bar electrode portion 40b is formed on the translucent conductive film 9 and the two amorphous silicon layers 33 by screen printing. At this time, the bus bar electrode portion 40b has a larger width (about 1.5 mm) and thickness (about 40 μm) than the amorphous silicon layer 33 and is in contact with the entire surface of the amorphous silicon layer 33 in the longitudinal direction. At the same time, the amorphous silicon layer 33 is formed so as to cover the lower surface and side surfaces thereof. Further, the bus bar electrode portion 40b is formed so as to be in contact with the regions on both sides of the region where the amorphous silicon layer 33 is formed on the lower surface of the translucent conductive film 9. The manufacturing process other than the above of the photovoltaic device 31 according to the fourth embodiment is the same as the manufacturing process of the photovoltaic device 1 according to the first embodiment described above.

  In the fourth embodiment, as described above, the bus bar electrode portions 36b and 40b of the front surface side collector electrode 36 and the rear surface side collector electrode 40 are spread over the entire area in the longitudinal direction of the surfaces of the amorphous silicon layers 32 and 33, respectively. By making contact with each other and forming the amorphous silicon layer 32 so as to cover the upper surface and side surfaces of the amorphous silicon layer 32 and the lower surface and side surfaces of the amorphous silicon layer 33, the surface side collector electrode 36 and the back side collector electrode 40 are amorphous. Since the adhesion to the porous silicon layers 32 and 33 is greater than the adhesion to the translucent conductive films 5 and 9, the front-side collector electrode 36 and the back-side collector electrode 40 are attached only to the translucent conductive films 5 and 9, respectively. Compared with the case where it is configured to contact, the front-side collector electrode 36 and the back-side collector electrode 40 can be made difficult to peel off. That is, the natural oxide film formed on the surfaces of the amorphous silicon layers 32 and 33 has a higher hydrophilicity than the light-transmitting conductive films 5 and 9, and therefore, the amorphous silicon layers 32 and 33 and the surface-side collections. It is considered that the adhesion between the electrode 36 and the back side collector electrode 40 is enhanced, and as a result, the front side collector electrode 36 and the back side collector electrode 40 can be made difficult to peel off. Thereby, since it can suppress that the surface side collector electrode 36 and the back surface side collector electrode 40 peel when modularizing by connecting the some photovoltaic device 31 with a tab, the photovoltaic device 31 is. Yield drop when modularizing can be suppressed.

(Fifth embodiment)
FIG. 19 is a top view showing the overall configuration of the photovoltaic device according to the fifth embodiment of the present invention. 20 is a cross-sectional view of the photovoltaic device according to the fifth embodiment shown in FIG. 19 taken along the line 500-500. FIG. 21 is a sectional view taken along line 550-550 of the photovoltaic device according to the fifth embodiment shown in FIG. Next, the structure of the photovoltaic device according to the fifth embodiment will be described with reference to FIGS.

  In the photovoltaic device 41 according to the fifth embodiment, as shown in FIGS. 19 and 20, unlike the photovoltaic device 1 according to the first embodiment (see FIG. 1), the front-side collector electrode 46 and the back-side collector. Portions in the vicinity of both ends in the longitudinal direction of each of the bus bar electrode portions 46b and 50b of the electrode 50 are in contact with the upper surface and the lower surface of the n-type single crystal silicon substrate 2, respectively. In the fifth embodiment, as shown in FIGS. 20 and 21, i-type amorphous silicon layers 43 and 47, p-type amorphous silicon layer 44, n-type amorphous silicon layer 48, translucency The conductive films 45 and 49 are all formed in a region that is slightly smaller than the n-type single crystal silicon substrate 2. That is, a region not covered with the i-type amorphous silicon layer 43, the p-type amorphous silicon layer 44, and the translucent conductive film 45 is formed in the vicinity of the outer peripheral portion of the upper surface of the n-type single crystal silicon substrate 2. In addition, a region not covered with the i-type amorphous silicon layer 47, the n-type amorphous silicon layer 48, and the translucent conductive film 49 in the vicinity of the outer peripheral portion of the lower surface of the n-type single crystal silicon substrate 2. Is formed. The i-type amorphous silicon layer 43 is an example of the “semiconductor layer”, “first semiconductor layer”, and “first non-single-crystal semiconductor layer” in the present invention. 1 is an example of a “semiconductor layer”, “first semiconductor layer”, and “second non-single-crystal semiconductor layer” of the present invention. The i-type amorphous silicon layer 47 is an example of the “semiconductor layer” and “first semiconductor layer” of the present invention, and the n-type amorphous silicon layer 48 is the “semiconductor layer” and “ It is an example of a “first semiconductor layer”.

  Further, the portion of the front side collector electrode 46 in the vicinity of the end of the bus bar electrode portion 46b is composed of the i-type amorphous silicon layer 43, the p-type amorphous silicon layer 44 on the upper surface of the n-type single crystal silicon substrate 2, and the translucent light. In contact with the region not covered by the conductive film 45. On the other hand, the portion in the vicinity of the end portion of the bus bar electrode portion 50b of the back side collector electrode 50 has an i-type amorphous silicon layer 47, an n-type amorphous silicon layer 48 on the lower surface of the n-type single crystal silicon substrate 2, and a light transmitting portion. In contact with the region not covered by the conductive film 49. The i-type amorphous silicon layers 43 and 47, the p-type amorphous silicon layer 44, the n-type amorphous silicon layer 48, and the translucent conductive films 45 and 49 of the n-type single crystal silicon substrate 2 are covered. Since a natural oxide film having a hydrophilic property higher than that of the translucent conductive films 45 and 49 is formed on the surface of the non-transparent region, the vicinity of the end portions of the bus bar electrode portions 46b and 50b in contact with the surface of the region is formed. The adhesiveness of the part is considered to be larger than the adhesiveness when contacting the translucent conductive films 45 and 49. The remaining structure of the photovoltaic device 41 according to the fifth embodiment is similar to the structure of the photovoltaic device 1 according to the first embodiment described above.

  Next, with reference to FIGS. 19-21, the manufacturing process of the photovoltaic apparatus by 5th Embodiment is demonstrated.

  In the fifth embodiment, as shown in FIGS. 20 and 21, an i-type non-crystalline region is used in a region slightly smaller than the n-type single crystal silicon substrate 2 on the upper surface of the n-type single crystal silicon substrate 2 using a metal mask. After sequentially depositing the crystalline silicon layer 43 and the p-type amorphous silicon layer 44, the i-type amorphous is formed in a region slightly smaller than the n-type single crystal silicon substrate 2 on the lower surface of the n-type single crystal silicon substrate 2. A silicon layer 47 and an n-type amorphous silicon layer 48 are sequentially stacked. Thereafter, translucent conductive films 45 and 49 are formed on the surfaces of the p-type amorphous silicon layer 44 and the n-type amorphous silicon layer 48 using a metal mask, respectively.

  Next, as shown in FIGS. 19 to 21, the surface-side collector electrode 46 composed of the comb-shaped electrode portion 46 a and the bus bar electrode portion 46 b is formed in a predetermined region on the upper surface of the translucent conductive film 45 using screen printing. After the formation, a back-side collector electrode 50 including a comb-shaped electrode portion (not shown) and a bus bar electrode portion 50b is formed in a predetermined region on the lower surface of the translucent conductive film 49.

  At this time, in the fifth embodiment, the bus bar electrode portion 46b is formed so that the portions near both ends in the longitudinal direction are in contact with the vicinity of the outer peripheral portion of the upper surface of the n-type single crystal silicon substrate 2, and the bus bar electrode portion. 50b is formed so that the portions in the vicinity of both ends in the longitudinal direction are in contact with the vicinity of the outer peripheral portion of the lower surface of n-type single crystal silicon substrate 2. The manufacturing process of the photovoltaic device 41 according to the fifth embodiment other than the above is the same as the manufacturing process of the photovoltaic device 1 according to the first embodiment described above.

  In the fifth embodiment, as described above, the portions near the ends on both sides in the longitudinal direction of the bus bar electrode portions 46b and 50b of the front surface side collector electrode 46 and the back surface side collector electrode 50 are respectively formed on the n-type single crystal silicon substrate 2. By contacting the upper surface and the lower surface, the adhesion of the front-side collector electrode 46 and the rear-side collector electrode 50 to the n-type single crystal silicon substrate 2 is greater than the adhesion to the translucent conductive films 45 and 49. Compared to the case where the side collector electrode 46 and the back side collector electrode 50 are configured to contact only the translucent conductive films 45 and 49, respectively, the front side collector electrode 46 and the back side collector electrode 50 are made difficult to peel off. Can do. That is, since the natural oxide film formed on the surface of the n-type single crystal silicon substrate 2 has higher hydrophilicity than the light-transmitting conductive films 45 and 49, the n-type single crystal silicon substrate 2 and the surface-side collector electrode 46. In addition, it is considered that the adhesion to the back side collector electrode 50 is increased, and as a result, it is considered that the front side collector electrode 46 and the back side collector electrode 50 can be made difficult to peel off. Thereby, since it can suppress that the surface side collector electrode 46 and the back surface side collector electrode 50 peel when modularizing by connecting the some photovoltaic device 41 with a tab, the photovoltaic device 41 Yield drop when modularizing can be suppressed.

  Next, an experiment relating to the adhesion of the collector electrode performed to confirm the effects of the first to fifth embodiments will be described.

  First, three samples were prepared in which collector electrodes were formed on the upper surfaces of an n-type single crystal silicon substrate, a p-type amorphous silicon layer, and a light-transmitting conductive film. Then, the adhesion strength of the collector electrode was measured for each of these three samples. In the measurement of the adhesion strength, as shown in FIG. 22, a tab 61 having a width of 1.5 mm and a thickness of 150 μm was attached on the bus bar electrode portion 60 a of the collector electrode 60. The tab 61 is an electric wiring made of Cu foil used when a plurality of photovoltaic devices are connected to form a module, and is coated with solder. The tab 61 was attached by applying flux to the bus bar electrode portion 60a of the collector electrode 60 and then heating the tab 61 and soldering it to the bus bar electrode portion 60a. The sample was fixed and one end of the tab 61 was bent in a direction perpendicular to the upper surface of the sample, and the bent end was sandwiched between the clips 63 of the measuring device 62. Thereafter, the handle 64 of the measuring device 62 was turned and the tab 61 was pulled to measure the peeling strength when the tab 61 and the collector electrode 60 were peeled off from the sample. The adhesion strength of the collector electrode was measured as described above.

  In the measurement of the adhesion strength of the collector electrode performed for the above three samples, the normalized adhesion strength when the adhesion strength of the sample in which the collector electrode is formed on the upper surface of the light-transmitting conductive film is 1 is p-type non- The sample having the collector electrode formed on the upper surface of the crystalline silicon layer has a value of 5.2 to 6.3, and the sample having the collector electrode formed on the upper surface of the n-type single crystal silicon substrate has a value of 4.9 to 6.0. It was. From this result, when the collector electrode is formed on the upper surface of the p-type amorphous silicon layer or the n-type single crystal silicon substrate, compared to the case where the collector electrode is formed on the upper surface of the translucent conductive film, It has been found that very high adhesion strength can be obtained. This is because a p-type amorphous silicon layer and an n-type single crystal silicon substrate are formed by forming a natural oxide film having high hydrophilicity on the surfaces of the p-type amorphous silicon layer and the n-type single crystal silicon substrate. This is thought to be due to the improved adhesion of the collector electrode to the p-type amorphous silicon layer and the n-type single crystal silicon substrate.

  Next, after producing photovoltaic devices according to Examples 1 to 6 and Comparative Example 1 below, the adhesion strength of the collector electrode was measured for each of the produced photovoltaic devices.

(Example 1)
The photovoltaic device according to Example 1 was configured in the same manner as the upper surface side of the photovoltaic device according to the first embodiment described above. Specifically, an i-type amorphous silicon layer is formed so as to cover the entire top surface of a 10 cm square n-type single crystal silicon substrate, and a p-type non-crystalline layer is formed so as to cover the entire top surface of the i-type amorphous silicon layer. A crystalline silicon layer was formed. Then, a 9 cm square translucent conductive film was formed on the upper surface of the p-type amorphous silicon layer. As a result, a region not covered with the translucent conductive film having a width of 5 mm was formed in the vicinity of the outer peripheral portion of the upper surface of the p-type amorphous silicon layer. And the collector electrode which has a bus-bar electrode part longer than one side of a translucent conductive film is formed on the upper surface of a translucent conductive film, and 2 mm from both ends of a bus-bar electrode part is respectively p-type amorphous silicon It was configured to contact the layer. The bus bar electrode portion was formed to have a width of 1.5 mm and a thickness of 40 μm.

(Example 2)
The photovoltaic device according to Example 2 was configured in the same manner as the upper surface side of the photovoltaic device according to the second embodiment described above. Specifically, an i-type amorphous silicon layer is formed so as to cover the entire top surface of a 10 cm square n-type single crystal silicon substrate, and a p-type non-crystalline layer is formed so as to cover the entire top surface of the i-type amorphous silicon layer. A crystalline silicon layer was formed. Then, on the upper surface of the p-type amorphous silicon layer, a translucent conductive film having a rectangular opening as viewed in plan on the outer surface was formed. At this time, a region not covered with the light-transmitting conductive film having a width of 5 mm was formed in the vicinity of the outer peripheral portion of the upper surface of the p-type amorphous silicon layer. Then, the collector electrode is formed on the upper surface of the translucent conductive film, and 2 mm from both ends of the bus bar electrode portion of the collector electrode is respectively formed on the p-type amorphous silicon layer through the openings of the translucent conductive film. Configured to contact. The bus bar electrode portion was formed to have a width of 1.5 mm and a thickness of 40 μm.

(Example 3)
The photovoltaic device according to Example 3 was configured in the same manner as the upper surface side of the photovoltaic device according to the third embodiment. Specifically, an i-type amorphous silicon layer is formed so as to cover the entire top surface of a 10 cm square n-type single crystal silicon substrate, and a p-type non-crystalline layer is formed so as to cover the entire top surface of the i-type amorphous silicon layer. A crystalline silicon layer was formed. Then, a 9 cm square translucent conductive film was formed on the upper surface of the p-type amorphous silicon layer. As a result, a region not covered with the translucent conductive film having a width of 5 mm was formed in the vicinity of the outer peripheral portion of the upper surface of the p-type amorphous silicon layer. Then, two linear grooves having a width of 0.5 μm were formed by removing a part of the light-transmitting conductive film using an excimer laser. Then, the collector electrode was formed on the upper surface of the translucent conductive film, and the bus bar electrode portion of the collector electrode was configured to contact the p-type amorphous silicon layer along the two groove portions. The bus bar electrode portion was formed to have a width of 1.5 mm and a thickness of 40 μm.

(Example 4)
The photovoltaic device according to Example 4 was configured in the same manner as the upper surface side of the photovoltaic device according to the fourth embodiment described above. Specifically, an i-type amorphous silicon layer is formed so as to cover the entire top surface of a 10 cm square n-type single crystal silicon substrate, and a p-type non-crystalline layer is formed so as to cover the entire top surface of the i-type amorphous silicon layer. A crystalline silicon layer was formed. Then, a 9 cm square translucent conductive film was formed on the upper surface of the p-type amorphous silicon layer. Then, two amorphous silicon layers were formed at a predetermined interval in a predetermined region on the upper surface of the translucent conductive film. The two amorphous silicon layers were formed to have a width of 0.5 mm and a thickness of 1.5 nm. Then, a collector electrode was formed so as to cover a predetermined region on the upper surface of the translucent conductive film and the two amorphous silicon layers. At this time, the bus bar electrode portion of the collector electrode is in contact with the entire surface in the longitudinal direction of each surface of the two amorphous silicon layers and covers the upper surface and side surfaces of each of the two amorphous silicon layers. Formed. Further, the bus bar electrode portion was formed so as to be in contact with the regions on both sides of the region where the amorphous silicon layer was formed on the upper surface of the translucent conductive film. In addition, in a state where the bus bar electrode portion was formed on the amorphous silicon layer, the portion composed of the amorphous silicon layer and the bus bar electrode portion was configured to have a width of 1.5 mm and a thickness of 40 μm.

(Example 5)
The photovoltaic device according to Example 5 was configured in the same manner as the upper surface side of the photovoltaic device according to the fifth embodiment described above. Specifically, a 9 cm square i-type amorphous silicon layer, a p-type amorphous silicon layer, and a light-transmitting conductive film were sequentially deposited on the top surface of a 10 cm square n-type single crystal silicon substrate. As a result, a region not covered by the translucent conductive film having a width of 5 mm, the p-type amorphous silicon layer, and the i-type amorphous silicon layer is formed in the vicinity of the outer peripheral portion of the upper surface of the n-type single crystal silicon substrate. did. And the collector electrode which has a bus-bar electrode part longer than one side of a translucent conductive film is formed on the upper surface of a translucent conductive film, and 2 mm from both ends of a bus-bar electrode part is an n-type single crystal silicon substrate, respectively It was comprised so that it might contact. The bus bar electrode portion was formed to have a width of 1.5 mm and a thickness of 40 μm.

(Example 6)
In the photovoltaic device according to Example 6, a translucent conductive film was formed using ZnO doped with ₃ % by mass of Al ₂ O ₃ . Except for this, a photovoltaic device according to Example 6 was produced in the same manner as in Example 1 described above.

(Comparative Example 1)
The photovoltaic device according to Comparative Example 1 was configured in the same manner as the upper surface side of the above-described conventional photovoltaic device (see FIG. 24). Specifically, an i-type amorphous silicon layer is formed so as to cover the entire top surface of a 10 cm square n-type single crystal silicon substrate, and a p-type non-crystalline layer is formed so as to cover the entire top surface of the i-type amorphous silicon layer. A crystalline silicon layer was formed. Then, a 9 cm square translucent conductive film was formed on the upper surface of the p-type amorphous silicon layer. As a result, a region not covered with the translucent conductive film having a width of 5 mm was formed in the vicinity of the outer peripheral portion of the upper surface of the p-type amorphous silicon layer. And the collector electrode was formed on the upper surface of a translucent conductive film. At this time, the collector electrode was formed so as to contact only the upper surface of the translucent conductive film. The bus bar electrode portion of the collector electrode was formed to have a width of 1.5 mm, a thickness of 40 μm, and a length of 8.8 mm.

  For the photovoltaic devices according to Examples 1 to 4 and Comparative Example 1 described above, the adhesion strength of the collector electrode was measured. This adhesion strength was measured twice before and after the moisture resistance test (humidity: 85%, temperature: 85 ° C., 2 hours). In this measurement, the adhesion strength was measured for each of the 100 samples according to Examples 1 to 4 and Comparative Example 1, and the average value of the measured adhesion strength of each 100 sheets was calculated, and then Comparative Example 1 was used. Normalization was performed based on the calculated adhesion strength. The results are shown in Table 1 below.

上記表１の結果から、耐湿試験前および耐湿試験後のどちらにおいても、実施例１〜３では、比較例１に比べて密着強度が大きく向上していることがわかる。これは、実施例１〜３では、集電極のバスバー電極部の一部が、集電極に対する密着性が透光性導電膜に比べて高いｐ型非晶質シリコン層に接触していることによると考えられる。この結果から、集電極のバスバー電極部の一部をｐ型非晶質シリコン層に接触させることが集電極の剥離を抑制するために好ましいことが判明した。また、上記表１から、実施例３の規格化密着強度（耐湿試験前：２．１、耐湿試験後：６．３）は、実施例１の規格化密着強度（耐湿試験前：５．３、耐湿試験後：１８．３）、および、実施例２の規格化密着強度（耐湿試験前：５．１、耐湿試験後：１８．７）に比べて小さいことがわかる。すなわち、実施例３では、実施例１および２に比べて、集電極の剥離を抑制する効果が小さいことがわかる。これは、溝部を介してｐ型非晶質シリコン層とバスバー電極部とが接触する実施例３では、集電極の剥離の起点となるバスバー電極部の端部近傍の部分のｐ型非晶質シリコン層に対する接触面積が実施例１および２に比べて小さいため、実施例１および２に比べて集電極の剥離を抑制する効果が小さくなったと考えられる。

From the results of Table 1 above, it can be seen that the adhesion strength is greatly improved in Examples 1 to 3 as compared with Comparative Example 1 both before and after the moisture resistance test. This is because in Examples 1 to 3, a part of the bus bar electrode portion of the collector electrode is in contact with the p-type amorphous silicon layer that has higher adhesion to the collector electrode than the translucent conductive film. it is conceivable that. From this result, it was found that it is preferable to bring a part of the bus bar electrode portion of the collector electrode into contact with the p-type amorphous silicon layer in order to suppress the peeling of the collector electrode. Also, from Table 1 above, the normalized adhesion strength of Example 3 (before the moisture resistance test: 2.1, after the moisture resistance test: 6.3) is the normalized adhesion strength of Example 1 (before the moisture resistance test: 5.3). And after the moisture resistance test: 18.3) and the normalized adhesion strength of Example 2 (before the moisture resistance test: 5.1, after the moisture resistance test: 18.7). That is, it can be seen that the effect of suppressing the peeling of the collector electrode is smaller in Example 3 than in Examples 1 and 2. In Example 3 where the p-type amorphous silicon layer and the bus bar electrode portion are in contact with each other via the groove portion, the p-type amorphous portion in the vicinity of the end portion of the bus bar electrode portion, which is the starting point of the separation of the collector electrode, is used. Since the contact area with respect to the silicon layer is smaller than those in Examples 1 and 2, it is considered that the effect of suppressing peeling of the collector electrode is smaller than in Examples 1 and 2.

  In addition, from the results of Table 1 above, it can be seen that the adhesion strength is significantly improved in Example 4 as compared with Comparative Example 1 both before and after the moisture resistance test. This is considered to be due to the fact that in Example 4, the bus bar electrode portion of the collector electrode is formed so as to cover the amorphous silicon layer having higher adhesion to the collector electrode than the translucent conductive film. . From this result, it is possible to form an amorphous silicon layer in a predetermined region on the translucent conductive film and to form a bus bar electrode portion of the collector electrode so as to cover the amorphous silicon. It has been found preferable to suppress. Further, from Table 1 above, the normalized adhesion strength of Example 4 (before the moisture resistance test: 2.7, after the moisture resistance test: 9.3) is the normalized adhesion strength of Example 1 (before the moisture resistance test: 5.3). And after the moisture resistance test: 18.3) and the normalized adhesion strength of Example 2 (before the moisture resistance test: 5.1, after the moisture resistance test: 18.7). That is, it can be seen that the effect of suppressing the peeling of the collector electrode is smaller in Example 4 than in Examples 1 and 2. In Example 4, the contact area with the p-type amorphous silicon layer in the vicinity of the end of the bus bar electrode part, which is the starting point of peeling of the collector electrode, is the end of the bus bar electrode part according to Examples 1 and 2. Since the contact area with the p-type amorphous silicon layer in the vicinity is small, it is considered that the effect of suppressing the peeling-off of the collector electrode is smaller than in Examples 1 and 2.

  Next, using the photovoltaic devices according to Examples 1 to 4 and Comparative Example 1 above, the yield in a tab attaching step in which 12 photovoltaic devices were connected in series by tabs was measured. The yield was measured using 12,000 (1000 sets) photovoltaic devices for each of Examples 1 to 4 and Comparative Example 1. The results are shown in Table 2 below.

上記表２の結果から、実施例１〜４による歩留まり（実施例１：９９．９％、実施例２：９９．７％、実施例３：９９．８％、実施例４：９９．８％）は、それぞれ、比較例１による歩留まり（９８．７％）に比べて高いことがわかる。これは、実施例１〜４による光起電力装置では、比較例１による光起電力装置に比べて集電極の密着強度が大きくなったため集電極の剥離が抑制されたことによると考えられる。この結果から、集電極のバスバー電極部の一部を非晶質シリコン層に接触させることにより、複数の光起電力装置をタブにより接続してモジュール化する際の歩留まりを向上することが可能であることが判明した。

From the results of Table 2 above, the yields according to Examples 1 to 4 (Example 1: 99.9%, Example 2: 99.7%, Example 3: 99.8%, Example 4: 99.8% ) Are higher than the yield (98.7%) according to Comparative Example 1, respectively. This is considered to be because in the photovoltaic devices according to Examples 1 to 4, since the adhesion strength of the collector electrode was increased as compared with the photovoltaic device according to Comparative Example 1, peeling of the collector electrode was suppressed. From this result, it is possible to improve the yield when modularizing a plurality of photovoltaic devices connected by tabs by bringing a part of the bus bar electrode portion of the collector electrode into contact with the amorphous silicon layer. It turned out to be.

  Next, for the photovoltaic devices according to Examples 5 and 6 and Comparative Example 1, the adhesion strength of the collector electrode before and after the moisture resistance test was measured in the same manner as in Examples 1 to 4 above. The results are shown in Table 3 below.

上記表３の結果から、耐湿試験前および耐湿試験後のどちらにおいても、実施例５では、比較例１に比べて集電極の密着強度が大きく向上していることがわかる。これは、実施例５では、集電極のバスバー電極部の端部近傍の部分が、透光性導電膜よりも集電極に対する密着性の高いｎ型単結晶シリコン基板に接触していることによると考えられる。これにより、実施例５のように集電極のバスバー電極部の端部近傍の部分をｎ型単結晶シリコン基板に接触させることが集電極の密着性の向上のために好ましいことが判明した。なお、上記のように、集電極のバスバー電極部の端部近傍の部分をｎ型単結晶シリコン基板に接触させた場合には、集電極の密着性を向上させることが可能である一方、集電極と発電層であるｎ型単結晶シリコン基板との界面において多くのキャリアの再結合が生じるため光起電力装置の出力特性が低下される。

From the results of Table 3 above, it can be seen that the adhesion strength of the collector electrode is greatly improved in Example 5 as compared with Comparative Example 1 both before and after the moisture resistance test. This is because, in Example 5, the portion in the vicinity of the end portion of the bus bar electrode portion of the collector electrode is in contact with the n-type single crystal silicon substrate having higher adhesion to the collector electrode than the translucent conductive film. Conceivable. As a result, it was found that it is preferable to bring the portion near the end of the bus bar electrode portion of the collector electrode into contact with the n-type single crystal silicon substrate as in Example 5 in order to improve the adhesion of the collector electrode. As described above, when the portion near the end of the bus bar electrode portion of the collector electrode is brought into contact with the n-type single crystal silicon substrate, the adhesion of the collector electrode can be improved. Since many carriers are recombined at the interface between the electrode and the n-type single crystal silicon substrate that is the power generation layer, the output characteristics of the photovoltaic device are deteriorated.

Further, from the results of Table 1 and Table 3, in the photovoltaic device according to Example 6, the adhesion strength of the photovoltaic device according to Example 1 (before the moisture resistance test: 5.3, after the moisture resistance test: 18.3) It can be seen that a high adhesion strength equivalent to (before the moisture resistance test: 6.1, after the moisture resistance test: 18.8) can be obtained. From this result, even when the translucent conductive film is made of a material other than ITO, such as ZnO doped with Al ₂ O ₃ , the portion near the end portion of the bus bar electrode portion of the collector electrode is a p-type amorphous silicon layer. It has been found that peeling of the collector electrode can be suppressed by contacting the electrode. In addition, since the photovoltaic device according to Examples 5 and 6 can suppress peeling of the collector electrode, the yield in the tab attachment process when the photovoltaic device is modularized is the same as in Examples 1 to 3 above. It can be easily improved.

  The embodiments and examples disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments and examples but by the scope of claims for patent, and includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above embodiment, a photovoltaic device having a structure in which an i-type amorphous silicon layer and a p-type amorphous silicon layer are formed on an n-type single crystal silicon substrate has been described as an example. The present invention is not limited to this, and can be widely applied to photovoltaic devices having other structures.

  Further, in the experiment conducted for confirming the effect of the above embodiment, the measurement of the adhesion strength of the collector electrode when a part of the collector electrode is brought into contact with the p-type amorphous silicon layer is shown. However, the present invention is not limited to this, and the same result can be obtained when a part of the collector electrode is brought into contact with the n-type amorphous silicon layer. This has been confirmed by experiments of the present inventors.

  Moreover, in the said embodiment, although silicon (Si) was used as a semiconductor material, this invention is not limited to this, SiGe, SiGeC, SiC, SiN, SiGeN, SiSn, SiSnN, SiSnO, SiO, Ge, GeC, Any semiconductor of GeN may be used. In this case, these semiconductors may be crystalline or amorphous or microcrystalline containing at least one of hydrogen and fluorine.

In the above embodiment, Sn-doped indium oxide (ITO) is used as the material constituting the translucent conductive film. However, the present invention is not limited to this, and the translucent material made of a material other than the ITO film is used. A conductive film may be used. For example, it was prepared by mixing an appropriate amount of at least one of Zn, As, Ca, Cu, F, Ge, Mg, S, Si and Te as a compound powder with indium oxide powder (In ₂ O ₃ ) and sintering. A light-transmitting conductive film formed using a target may be used.

  Moreover, in the said embodiment, although the amorphous silicon layer was formed using RF plasma CVD method, this invention is not limited to this, Vapor deposition method, sputtering method, microwave plasma CVD method, ECR method, thermal CVD method The amorphous silicon layer may be formed using other methods such as LPCVD (low pressure CVD).

  Moreover, in the said embodiment, Ar gas was used at the time of sputtering of the ITO film | membrane which comprises a transparent conductive film, However, this invention is not restricted to this, He, Ne, Kr, other inert gas of Xe, or these It is also possible to use a mixed gas.

  Moreover, in the said embodiment, although the discharge operation | movement at the time of sputtering was performed using DC electric power, this invention is not limited to this, Pulse modulation DC discharge, RF discharge, VHF discharge, microwave discharge etc. are used. Also good.

  Moreover, in the said 2nd Embodiment, although comprised so that the width | variety of the opening part of a translucent conductive film might become larger than the width | variety of a bus-bar electrode part, this invention is not limited to this, The opening of a translucent conductive film You may comprise so that the width | variety of a part may become a magnitude | size below the width | variety of a bus-bar electrode part.

  Moreover, in the said 2nd Embodiment, although the rectangular-shaped opening part was formed in the translucent conductive film, this invention is not limited to this, The shape of the opening part formed in a translucent conductive film is a triangle or circular Other shapes may be used. As long as it is possible to bring the bus bar electrode portion of the collector electrode into contact with the semiconductor layer formed on the lower side of the translucent conductive film, the same shape as in the second embodiment can be used regardless of the shape of the opening. An effect can be obtained.

  Moreover, in the said 3rd Embodiment, although the groove part was formed in the translucent conductive film so that it might extend linearly, this invention is not restricted to this, The groove part of other shapes, such as a broken line shape, in this translucent conductive film May be formed. Also in this case, the same effect as the third embodiment can be obtained.

  In the fourth embodiment, the amorphous silicon layer formed on the translucent conductive film is configured as i-type. However, the present invention is not limited to this, and the amorphous silicon layer is configured as n-type. May be. If the amorphous silicon layer is made n-type in this way, the resistance of the amorphous silicon layer can be reduced, so that the output characteristics are greatly reduced due to the resistance of the amorphous silicon layer. Can be suppressed. In addition, when the light-transmitting conductive film is n-type, the amorphous silicon layer and the light-transmitting material can be obtained by making the amorphous silicon layer n-type by introducing n-type impurities into the amorphous silicon layer. Since the contact resistance between the conductive films can be reduced, it is possible to further suppress the deterioration of the output characteristics.

  In the fourth embodiment, the amorphous silicon layer is formed so as to extend linearly and is configured by one continuous layer. However, the present invention is not limited to this, and the amorphous silicon layer is formed on the translucent conductive film. The amorphous silicon layer to be formed may be formed in various shapes other than the above. For example, it may be formed in a discontinuous shape such as a dot shape or a broken line shape.

It is the expansion perspective view which showed partially the structure of the photovoltaic apparatus by 1st Embodiment of this invention. It is the top view which showed the whole structure of the photovoltaic apparatus by 1st Embodiment shown in FIG. It is sectional drawing along the 100-100 line of the photovoltaic apparatus by 1st Embodiment shown in FIG. It is sectional drawing along the 150-150 line | wire of the photovoltaic apparatus by 1st Embodiment shown in FIG. It is a top view for demonstrating the manufacturing process of the photovoltaic apparatus by 1st Embodiment of this invention. It is the top view which showed the whole structure of the photovoltaic apparatus by 2nd Embodiment of this invention. It is sectional drawing along the 200-200 line | wire of the photovoltaic apparatus by 2nd Embodiment shown in FIG. It is sectional drawing along the 250-250 line | wire of the photovoltaic apparatus by 2nd Embodiment shown in FIG. It is a top view for demonstrating the manufacturing process of the photovoltaic apparatus by 2nd Embodiment of this invention. It is the top view which showed the whole structure of the photovoltaic apparatus by 3rd Embodiment of this invention. It is sectional drawing along the 300-300 line | wire of the photovoltaic apparatus by 3rd Embodiment shown in FIG. It is sectional drawing along the 350-350 line | wire of the photovoltaic apparatus by 3rd Embodiment shown in FIG. It is a top view for demonstrating the manufacturing process of the photovoltaic apparatus by 3rd Embodiment of this invention. It is the expansion perspective view which showed partially the structure of the photovoltaic apparatus by 4th Embodiment of this invention. It is the top view which showed the whole structure of the photovoltaic apparatus by 4th Embodiment shown in FIG. It is sectional drawing along the 400-400 line of the photovoltaic apparatus by 4th Embodiment shown in FIG. It is sectional drawing along the 450-450 line | wire of the photovoltaic apparatus by 4th Embodiment shown in FIG. It is the expanded sectional view which showed the structure of the bus-bar electrode part of the photovoltaic apparatus by 4th Embodiment shown in FIG. It is the top view which showed the whole structure of the photovoltaic apparatus by 5th Embodiment of this invention. It is sectional drawing along the 500-500 line | wire of the photovoltaic apparatus by 5th Embodiment shown in FIG. It is sectional drawing along the 550-550 line | wire of the photovoltaic apparatus by 5th Embodiment shown in FIG. It is a schematic diagram for demonstrating the test method which measures the adhesive strength of a collector electrode. It is the expansion perspective view which partially showed the structure of the photovoltaic apparatus by an example of the past. It is the top view which showed the whole structure of the photovoltaic apparatus by an example of the prior art shown in FIG.

Explanation of symbols

1, 11, 21, 31, 41 Photovoltaic device 2 n-type single crystal silicon substrate (crystalline semiconductor layer, first semiconductor layer, semiconductor layer)
3, 43 i-type amorphous silicon layer (first non-single crystal semiconductor layer, first semiconductor layer, semiconductor layer)
4, 44 p-type amorphous silicon layer (second non-single crystal semiconductor layer, first semiconductor layer, semiconductor layer)
5, 15, 25, 45 Translucent conductive film 6, 16, 26, 36, 46 Surface side collector (collector)
6a, 16a, 26a, 36a, 46a Comb electrode part (first electrode part)
6b, 16b, 26b, 36b, 46b Bus bar electrode part (second electrode part)
7, 47 i-type amorphous silicon layer (semiconductor layer, first semiconductor layer)
8, 48 n-type amorphous silicon layer (semiconductor layer, first semiconductor layer)
9, 19, 29, 49 Translucent conductive film 10, 20, 30, 40, 50 Back side collector (collector)
10a, 40a Comb electrode part (first electrode part)
10b, 20b, 30b, 40b, 50b Bus bar electrode part (second electrode part)
32, 33 Amorphous silicon layer (semiconductor layer, second semiconductor layer)

Claims (8)

A translucent conductive film;
A photovoltaic device comprising a collector electrode formed on the surface of the light-transmitting conductive film and partly formed so as to contact the semiconductor layer ,
The semiconductor layer includes a first semiconductor layer formed under the translucent conductive film,
The first semiconductor layer includes a non-single crystal semiconductor layer,
The collector electrode includes a first electrode part for collecting current and a second electrode part for collecting the current collected by the first electrode part,
The photovoltaic device , wherein a portion of the second electrode portion in the vicinity of an end in the longitudinal direction is in contact with the first semiconductor layer . The first semiconductor layer includes a first conductive type crystalline semiconductor layer, a substantially intrinsic first non-single crystal semiconductor layer formed on a surface of the crystalline semiconductor layer, and the first non-single crystal. A second non-single crystal semiconductor layer of the second conductivity type formed on the surface of the semiconductor layer,
2. The photovoltaic device according to claim 1, wherein a portion in the vicinity of an end portion in the longitudinal direction of the second electrode portion is in contact with the second non-single crystal semiconductor layer.   3. The photovoltaic device according to claim 1, wherein portions in the vicinity of both ends in the longitudinal direction of the second electrode portion are in contact with the first semiconductor layer. The translucent conductive film includes a concave opening as viewed in plan on a part of the outer surface of the translucent conductive film,
4. The device according to claim 1, wherein a portion in the vicinity of an end portion in the longitudinal direction of the second electrode portion is in contact with the first semiconductor layer through an opening of the translucent conductive film. The photovoltaic device described. The photovoltaic device according to claim 4, wherein at least a part of the opening is formed in a region shielded from light by the second electrode portion . The translucent conductive film includes a groove portion,
The portion in the vicinity of the end portion in the longitudinal direction of the second electrode portion is in contact with the first semiconductor layer exposed in the groove portion along the groove portion of the translucent conductive film. The photovoltaic device of any one of these. The photovoltaic device according to claim 6, wherein at least a part of the groove is formed in a region shielded from light by the second electrode portion . A translucent conductive film;
A photovoltaic device comprising a collector electrode formed on the surface of the light-transmitting conductive film and partly formed so as to contact the semiconductor layer,
The semiconductor layer includes a first conductivity type crystalline semiconductor layer, a substantially intrinsic first non-single-crystal semiconductor layer formed on a surface of the crystalline semiconductor layer, and the first non-single-crystal semiconductor layer. A second non-single crystal semiconductor layer of the second conductivity type formed on the surface of
The collector electrode includes a first electrode part for collecting current and a second electrode part for collecting the current collected by the first electrode part,
The photovoltaic device, wherein a portion of the second electrode portion in the vicinity of an end portion in the longitudinal direction is formed so as to be in contact with the crystalline semiconductor layer.

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