JP4165143B2 - Manufacturing method of stem for semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a stem for a semiconductor device and a manufacturing method thereof.
[0002]
[Prior art]
FIG. 4C shows a completed view of a conventional stem for a semiconductor device. In FIG. 4C, 21 is a concave base formed by bending a disk-shaped metal plate by drawing, 22 is a semiconductor element mounting portion integrally formed with the base 21, and 23 is a through-hole provided in the base 21. , 24 is a ground lead wire that is conductively connected to the base 21, 25 is an insulating lead wire inserted through the through hole 23, 26 is a cured resin filling portion that fills the base 21 and the insulating lead wire 25, and 27 is an insulating lead wire. 25 is an uneven portion formed in 25, 28a and 28b are unfilled portions in the vicinity of the uneven portion when subjected to low-temperature and low compression as a countermeasure against burrs, 29 is an inner surface of an annular wall portion formed inside the base 21, The base includes a base processed into a concave shape, an insulating lead wire, and an uncured resin-filled component 30, and a through-hole through which the insulating lead wire is inserted is formed in the base. A cured resin filling portion of a semiconductor device stem to adopt a configuration in which the convex portion is formed. 4A shows a tablet-shaped uncured resin-filled component 30, and FIG. 4B shows the base 21, the insulating lead wire 25, and the uncured resin-filled component 30 as a jig (not shown). It is an assembly drawing which shows the combined state.
[0003]
The above configuration has been proposed as a method for solving the shortage of adhesion between the insulating lead wire 25 and the cured resin filling portion 26. As shown in the assembly sectional view of FIG. And forming a concavo-convex portion 27 at a portion where the cured resin filling portion 26 comes into contact, and heat-pressing the resin into the lead wire inserted through the base 21, thereby forming a machine with the concavo-convex portion 27 of the lead wire and the cured resin filling portion 26. This is an anchor effect (mechanical coupling) that shows the effect of a general catch, and is intended to increase the fracture strength from external stresses such as indentation and tension.
[0004]
[Problems to be solved by the invention]
However, in the above configuration, when the synthetic resin is filled, an unfilled portion of the resin is formed in the vicinity of the concave portion of the insulating lead wire, so that the fracture resistance between the lead wire and the synthetic resin is weakened.
[0005]
The base 21 and the insulating lead wire 25 are made of, for example, a metal such as Fe or Fe—Ni alloy, and the synthetic resin filler is made of, for example, melamine, phenol, epoxy, etc. These resin fillers are made of metal. At present, the wettability (compatibility) of the cured resin filling portion 26 is poor, and therefore, the adhesive strength is very weak at the interface between the base 21 and the insulating lead wire 25 and the cured resin filling portion 26. is there.
[0006]
Therefore, when an external stress such as pushing or pulling force is applied to the insulating lead wire 25 in a mounting process such as when the semiconductor element is attached to the semiconductor element attaching portion 22 or attached to the housing after assembly is completed, the insulating lead wire 25 There is a problem that a peeling phenomenon occurs at the interface between the resin filled portion 26 and the cured resin filling portion 26, and the insulation lead wire 25 comes out of the cured resin filled portion 26 and is not inclined.
[0007]
On the other hand, as a method for solving the shortage of adhesion between the insulating lead wire 25 and the cured resin filling portion 26, as shown in FIG. 4B, the portion of the insulating lead wire 25 that contacts the cured resin filling portion 26 It is widely known to use an insulating lead wire 25 in which a concavo-convex portion 27 is formed on the surface and an anti-disengagement treatment by an anchor effect (mechanical coupling) is provided.
[0008]
The conventional technique in which l <h <s in the relationship between s in FIG. 4 (a) and l and h in FIG. 4 (b) is assembled in the configuration as shown in FIG. 4 (b). That is, l is the lead wire diameter, s is the hole diameter provided for the lead wires of the insulating lead wire hole 32 and the ground lead wire hole 31, and h is the outer diameter of the convex portion of the concave and convex portion 27. When this is hot-pressed, molded and cured, unfilled portions 28a and 28b in the vicinity of the concavo-convex portion shown in FIG. 4C are generated in the cured resin and the lead wire wall surface in the vicinity of the concavo-convex portion 27 of the insulating lead wire 25. Problems arise.
[0009]
This method is effective in preventing the insulating lead wire 25 from coming off from the cured resin filling portion 26. However, with this method alone, low pressure compression and the entire process are performed at 200 ° C. or less to prevent burrs, so that unfilled portions 28a and 28b near the concavo-convex portions remain in the vicinity of the concavo-convex portions 27 provided on the insulating lead wire 25. In the mounting process such as when the semiconductor element is attached to the semiconductor element attaching portion 22 or after the assembly is completed and attached to the housing, the insulating lead wire 25 is hardened by external stress such as pushing or pulling force applied to the insulating lead wire 25. The problem of occurrence of defects such as peeling or tilting from the resin filling portion 26 still remains unsolved.
[0010]
And the method shown in FIG. 3 can be considered for the improvement. 101 is a concave base formed by bending a disk-shaped metal plate material, 102 is a semiconductor element mounting portion formed integrally with the base 101, 103 is a through hole provided in the base 101, and 104 is electrically connected to the base 101. The connected ground lead wire, 105 is an insulated lead wire inserted through the through-hole 103, 106 is a cured resin-filled portion filling the base 101 and the insulated lead wire 105, and 107 is an uneven portion formed on the insulated lead wire 105. , 108 is an unfilled portion in the vicinity of the concavo-convex portion when applied at low temperature and low compression as a countermeasure against burrs, and 109 is an inner surface of the annular wall portion formed inside the base 101, which is a base formed by processing a metal plate into a concave shape And an insulating lead wire and an uncured resin-filled part 110, and the individual uncured resin-filled parts 110 are filled from above and below the concavo-convex portion 107. It is conceivable.
[0011]
However, melt-filling and solidifying the uncured resin-filled part 110 by the method described above generates a large amount of bubbles at the resin interface, and the upper and lower uncured resin-filled parts 110 are filled with each other by filling by heating and press-fitting. There is concern that an unfamiliar interface will occur.
[0012]
The present invention is for solving the above-mentioned problems, and external force such as pushing and pulling force on an insulating lead wire applied in a mounting process such as when a semiconductor element is attached to a semiconductor element attachment portion or when it is attached to a housing after assembly is completed. To provide a stem for a semiconductor device in which the interface between the insulating lead wire and the cured resin filling portion does not peel due to stress, and the insulating lead wire does not tilt or peel off, and a method for manufacturing the same. Objective.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a method for manufacturing a stem for a semiconductor device including a mounting portion of a semiconductor laser element integrally formed on a base, an insulating lead wire, and a stem filled with a synthetic resin filler. Filling the powdered synthetic resin with a particle size as a particle size, and adding and mixing the filler selected from the classification set for each predetermined particle size, and setting the powdered synthetic resin mixed with the filler to the inner diameter of the base opening Placed in a mold with the same inner diameter of the mold , pressed by press molding , and has a hole for an insulation lead wire having a hole diameter smaller than the outer diameter of the convex portion formed on the insulation lead wire and larger than the wire diameter of the insulation lead wire forming an uncured resin filler pieces, a step of assembling the uncured resin filling member from the base opening portion side is inserted to the convex portion is subjected to the insulated lead wire, based interior uncured resin filler pieces Is a manufacturing method comprising a step of cold low compression when curing-molding. According to such a manufacturing method, it is possible to prevent a cured resin-unfilled portion from being formed near the concave portion of the lead wire.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[0016]
FIG. 1A shows a stem for a semiconductor device according to the present invention, and FIG. 1B is a cross-sectional view taken along line XX of FIG. 1 (a) and 1 (b), 1 is a concave base formed by bending a disk-shaped metal plate by drawing, 2 is a semiconductor element mounting part integrally formed with the base 1, and 3 is a base 1 4 is a ground lead wire electrically connected to the base 1, 5 is an insulated lead wire inserted into the through hole 3, and 6 is a cured resin filling portion that fills the base 1 and the insulated lead wire 5. , 7 is an uneven portion formed on the insulated lead wire 5, 8 is an unfilled portion near the uneven portion when heat compression molding is performed at a relatively low pressure as a countermeasure against burrs, and 9 is an annular formed inside the base 1. This is a stem for a semiconductor device, which has a configuration of an inner wall surface, and an unfilled portion in the vicinity of the concavo-convex portion is formed on the closed side of the metal base of the concavo-convex portion 7 of the insulating lead wire 5.
[0017]
Here, the uncured resin-filled part 10 is composed of a liquid A stage or a semi-solid B stage, and is formed with a hole whose inner shape is matched to the outer diameter of the insulating lead wire protrusion. .
[0018]
2 (a), 2 (b), 2 (c) and 2 (d) show a method for manufacturing a stem for a semiconductor device according to the present invention in the order of process processing. FIG. 2B is an assembled cross-sectional view through which the wire is inserted, and after the positions of the ground lead wire hole 11 and the insulated lead wire hole 12 of the uncured resin-filled component 10 are aligned with the lead wire of FIG. FIG. 2C is a sectional view of the finished product in which the uncured resin-filled component 10 is completely heated and compressed by the base 1.
[0019]
The uncured resin-filled component 10 is made of, for example, a thermosetting resin, and a filler is mixed in the thermosetting resin.
[0020]
The lead tensile strength is increased by appropriately increasing the filler content.
[0021]
The particle size of the filler was selected from among three types having different particle sizes, 0.25 mm to 1.27 mm, 0.25 mm to 0.85 mm, and 0.25 mm to 0.60 mm.
[0022]
At this time, the necessary tablet weight of the uncured resin-filled component 10 and the variation were set to 21 ± 1 mg, and the particle size satisfying the specifications was selected. For example, the specific gravity is 2, the glass transition point is 190 ° C., the linear expansion coefficient is 1 × 10 ⁻⁵ / ° C., the moisture absorption is 0.3 wt%, and it has the characteristics of polyfunctional epoxy, high T _g and low thermal expansion In particular, the expansion coefficient approaches that of metal.
[0023]
Next, an uncured resin-filled part that is press-molded is formed with a hole diameter that is smaller than the outer diameter of the convex portion formed on the insulating lead wire, and placed in a mold in which the inner diameter of the mold is matched with the inner diameter of the base.
[0024]
In particular, a powder having a particle size of 0.25 mm to 0.60 mm, which was excellent in adhesiveness and tensile strength of the insulating lead wire 5, was obtained, and pressed as shown in FIG. From c), l <s <h, for example, the hole diameter s was about 0.5 mm, and an uncured resin-filled part 10 was obtained.
[0025]
Here, the relationship between the insulating lead wire 5 and the uncured resin-filled component 10 is l <s <h as shown in FIG. The diameter of the insulating lead wire 5 can be appropriately selected. For example, the insulating lead wire 5 is made of a metal such as Fe or Fe—Ni alloy having a diameter of about 0.45 mm, and the shape of the uneven portion 7 can be appropriately selected. The outer diameter of the protrusions is about 0.78 mm, and a synthetic resin filler can be selected as appropriate. Here, a thermosetting resin was used.
[0026]
The insulating lead wire 5 and the uncured resin-filled component 10 are assembled by inserting the uncured resin-filled component 10 from the base opening side to the convex portion formed on the insulating lead wire 5.
[0027]
Next, when the uncured resin-filled part 10 is cured and molded inside the base, it is subjected to low temperature and low compression.
[0028]
Then, the uncured resin-filled component 10 is heated and pressed in the vicinity of the concavo-convex portion of the insulating lead 5 to fill the unfilled portion near the concavo-convex portion on the base opening side.
[0029]
The above method is a method for manufacturing a stem for a semiconductor device for eliminating the unfilled portion 8 in the vicinity of the concavo-convex portion on the base opening side and protecting the insulating lead wire and the stem from external stress such as pulling and pushing. According to this, the interface between the stem and the insulating lead wire and the cured resin filling portion 6 due to an external stress applied when mounting the semiconductor element to the semiconductor element mounting portion 2 or mounting to the housing after assembly is completed. This is a method for manufacturing a stem for a semiconductor device in only one process in which no peeling phenomenon occurs.
[0030]
In addition, since the said manufacturing method does not exceed 200 degreeC at all processes, metal plating can be given before an assembly. Accordingly, after the semiconductor device stem is manufactured, a post-treatment plating step is not required, and since it is manufactured by low-temperature and low-pressure compression, generation of burrs on the through-hole side is suppressed.
[0031]
Moreover, although thermosetting resin was mentioned as a synthetic resin type filler in embodiment, it is also possible to use a pressure sensitive adhesive, a low melting glass, a thermoplastic resin having a relatively high melt viscosity, or the like.
[0032]
Furthermore, since the uncured resin-filled component 10 is compressed and filled in the same shape as the inside of the base, the resin usage rate is almost 100% and there is almost no generation of resin waste.
[0033]
As mentioned above, although one Embodiment of the semiconductor device by this invention and its manufacturing method was described, unless it deviates from the thought of this invention, it can change suitably.
[0034]
【The invention's effect】
As described above, since the stem for a semiconductor device of the present invention has a configuration in which a filler is added to and mixed with a powdered synthetic resin, the adhesive strength between the metal and the synthetic resin filler increases. It is also possible to control the adhesive strength by controlling the content of the inorganic filler.
[0035]
In addition, the cured resin-filled portion plays a role in increasing the contact area with the insulated lead wire due to the uneven portions formed on the insulated lead wire, and the insulated lead wire has a specific shape portion for locking purposes. Therefore, the tensile strength between the cured resin filling portion and the insulating lead wire due to the anchor effect (mechanical coupling) is increased.
[0036]
The relationship between the insulation lead wire and the uncured resin-filled part is such that l <s <h, where l is the lead wire diameter, s is the hole diameter for the lead wire of the insulation lead wire and the ground lead wire, and h is the unevenness. It is the outer diameter of the convex part of a part. When s is smaller than h, an effect of filling the base opening side in the vicinity of the concavo-convex portion of the insulating lead wire by hot-pressing the uncured resin-filled part is shown.
[0037]
Furthermore, according to the method for manufacturing a stem for a semiconductor device of the present invention, the synthetic resin filler can be filled in one step molding, and the stem can be efficiently processed by low temperature and low compression performed at 200 ° C. or less in all steps. The effect which can be provided can be acquired.
[0038]
Furthermore, since it can be manufactured at a low temperature, there is an effect that the range of types of resin materials is wide.
[0039]
Further, the present invention further improves the fracture resistance of the insulation lead wire and the cured resin-filled portion due to external stress when mounting, such as when the semiconductor element is attached to the semiconductor element attachment portion or when the assembly is attached to the housing. Thus, it is possible to obtain a great effect that the defect rate such as a peeling phenomenon or tilting can be reduced.
[Brief description of the drawings]
FIG. 1 shows a stem for a semiconductor device in an embodiment of the present invention.
(A) is a perspective view (b) is a cross-sectional view taken along the line XX of FIG. 1 (a). FIG. 2 is a detailed cross-sectional view of a manufacturing process of a stem for a semiconductor device according to an embodiment of the present invention. To show
(A) is an assembly cross-sectional view of the base and the insulation lead (b) is an assembly cross-sectional view (c) in which the resin is inserted through the insulation lead wire, and is a completed stem product in which the uncured resin filler is melted and cured. Sectional view (d) is a view showing an uncured resin-filled member obtained by press-molding a synthetic resin-based filler. FIG. 3 is a sectional view showing an assembly of an insulating lead wire and a resin proposed in overcoming the problems of the present invention. 4 shows a manufacturing process of a stem according to a conventional embodiment.
(A) is a diagram showing an uncured resin-filled member obtained by press-molding a synthetic resin-based filler. (B) is an assembly cross-sectional view of an insulating lead wire and a resin. Cross section of the cured stem finished product 【Explanation of symbols】
1, 21, 101 Base 2, 22, 102 Semiconductor element mounting portion 3, 23, 103 Through hole 4, 24, 104 Ground lead wire 5, 25, 105 Insulated lead wire 6, 26, 106 Cured resin filling portion 7, 27, 107 Uneven portion 8, 28a, 28b Unfilled portion 9, 29, 109 near uneven portion Inner wall surface 10, 30, 110 Uncured resin-filled parts 11, 31 Holes for ground lead wire 12, 32 Insulated lead wire Hole

Claims (1)

In a manufacturing method of a semiconductor device stem having a mounting portion of a semiconductor laser element formed integrally with a base, an insulating lead wire, and a stem filled with a synthetic resin filler , the particle size of the powdered synthetic resin is reduced. A step in which a filler selected from among the classification set for each predetermined particle size is added and mixed, and the powdered synthetic resin mixed with the filler is combined with the inner diameter of the base opening to match the inner diameter of the mold An uncured resin-filled part having a hole for an insulation lead wire having a hole diameter smaller than the outer diameter of the convex portion formed on the insulation lead wire and larger than the wire diameter of the insulation lead wire , which is put into a mold and compressed by press molding. forming, a step of assembling by inserting the base opening side to the convex portion subjected to the uncured resin filler pieces to insulated lead wire, cure the uncured resin filled parts inside base The method of manufacturing a semiconductor device for stem characterized by comprising the step of low temperature low compression when-molding.

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