JP4165142B2 - Tray for semiconductor integrated circuit device - Google Patents

Tray for semiconductor integrated circuit device Download PDF

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JP4165142B2
JP4165142B2 JP2002220870A JP2002220870A JP4165142B2 JP 4165142 B2 JP4165142 B2 JP 4165142B2 JP 2002220870 A JP2002220870 A JP 2002220870A JP 2002220870 A JP2002220870 A JP 2002220870A JP 4165142 B2 JP4165142 B2 JP 4165142B2
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Prior art keywords
tray
integrated circuit
circuit device
semiconductor integrated
outer frame
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JP2004063839A (en
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学 石川
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、JEDEC規格の導電性半導体集積回路装置用トレーに関するものである。さらに詳細には、突起部分が破損脱落し難いJEDEC規格の導電性半導体集積回路装置用トレーに関するものである。
【0002】
【従来の技術】
半導体集積回路装置を収納するトレーの材料には、収納した半導体集積回路装置の静電気による回路破壊を防止するために、導電性材料が使用されている。
トレー材料が、ポリスチレン系(以下、PS系と略す。)の導電性材料やポリプロピレン系(以下、PP系と略す)の導電性材料の場合、トレーのコストと要求特性は満たされているが、強度が低く破損し易いことがある。
【0003】
半導体集積回路装置が加熱処理される場合、トレーとしては、加熱処理および加熱処理後の使用に支障がなく、耐熱性を有するトレーが用いられ、材料としては、ポリフェニレンエーテル系(以下、PPE系と略す。)、ポリエーテルスルホン系(以下、PES系と略す。)およびポリスルホン系(以下、PSUと略す。)の熱可塑性樹脂に、カーボンブラックの粒子や繊維等を配合した耐熱導電性材料が使用されている。前記の耐熱導電性材料からなるトレーは、導電性、耐熱性および寸法安定性等には優れるが、耐衝撃性が低く破損し易いことがある、特に、PES系およびPSU系の熱可塑性樹脂にカーボンファイバーが配合された耐熱導電性材料を使用したトレーは、耐熱性や制電領域の導電性に優れ、カーボン脱落による汚染がないものであるが、脆く破損し易いことがある。
【0004】
JEDEC規格の導電性半導体集積回路装置用トレーに関しては、トレーの両端の突起部分が、衝突や落下等の衝撃によって、破損脱落することがある。さらに、最近では、トレーを使用する環境が変化して来ており、例えば、収納する半導体集積回路装置の重量が増えていること、運搬時の梱包形態が変更され、トレーに加わる衝突や落下時の衝撃が増えていること、また、トレーの回収装置が導入され、トレーを高い位置から落下させて、トレー集積所へ移送されるようになっていること等のために、新たな破損脱落が発生している。
【0005】
そして、突起部分の破損脱落片は、半導体集積回路装置に接触すると、半導体集積回路装置を破損したり、半導体集積回路装置を取扱う環境を汚染したりする。また、突起部分が破損脱落すると、トレーの再使用が難しくなる。
【0006】
また、JEDEC規格の導電性半導体集積回路装置用トレーには、通常、その両端部の突起部分に名称や耐熱性および材質等が刻印されている。よって、
この突起部分が破損脱落した場合、トレーを識別できなくなり、また、破損トレーを原料として再利用する場合にも、トレーの選別が難しくなる。
【0007】
突起部分の破損脱落を防止するためには、トレーに用いられる材料を変更することが考えられるが、トレーに求められる特性と材料の特性が異なることがあるため、材料の変更は難しい。
【0008】
また、既存のトレーは、通常、従来の材料の特性に合わせて造られた既存のトレー金型を用いて、射出成形加工により製造されている。材料を新たな材料に変更した場合、新たな材料の成形収縮率や流動性等の特性が、従来の材料と異なるために、新たな材料に合わせて新たなトレー金型を製作する必要が生じ、開発に時間やコストがかかり好ましくない。
【0009】
【発明が解決しようとする課題】
本発明の目的は、突起部分が破損脱落し難いJEDEC規格の導電性半導体集積回路装置用トレーおよびその製造方法を提供することにある。
【0010】
【課題を解決するための手段】
本発明者等は、前述のとおりの状況において、検討の結果、本発明が、上記の課題を解決できることを見出し、本発明を完成させるに至った。
すなわち、本発明は、
半導体集積回路装置を収納するJEDEC規格の導電性半導体集積回路装置用トレーであって、前記トレーは長方形で段積み可能であり、半導体集積回路装置収納部分とそれを囲むトレー外枠部分とを有し、前記外枠トレー部分は4つのトレー周壁外側面を有し、相対するトレー周壁外側面に突起部分を備えており、前記突起部分が、下記落下テストにおいて、前記半導体集積回路装置収納部分および/または前記トレー外枠部分と同じ材料からなる突起部分が破損脱落する落下高さより、20cm以上高い落下高さを与える材料からなる導電性半導体集積回路装置用トレーおよびその製造方法に係るものである。
落下テスト:錘を入れたトレー19枚と上蓋用トレー1枚を重ねて約5kgとし、ポリプロピレン製樹脂バンドで締結したものを、相対するトレー周壁害側面の突起部分の片方を下向きにし、トレー底面と床面の角度が75°になるように落下させ、突起部分が破損脱落する高さを測定する。
【0011】
【発明の実施の形態】
本発明のJEDEC規格の導電性半導体集積回路装置用トレー(以下、JEDECトレーと称することがある。)の半導体集積回路装置収納部分とそれを囲むトレー外枠部分に用いられる材料としては、一般的に、導電性半導体集積回路装置用トレーに用いられている材料であって、導電性ICトレー材料や導電性耐熱ICトレー材料と称されている熱可塑性樹脂組成物である。例えば、熱可塑性樹脂と導電性材料と改質剤とからなる導電性熱可塑性樹脂組成物が挙げられる。
【0012】
熱可塑性樹脂としては、例えば、PES系樹脂、PSU系樹脂、PPE系樹脂、PS系樹脂、ポリカーボネイト系樹脂、PP系樹脂、ポリエチレン系樹脂、液晶ポリマー系樹脂等の熱可塑性樹脂が挙げられ、これらを単独で用いてもよく、少なくとも2種類を併用してもよい。導電性材料としては、例えば、導電性のカーボンブラック、金属の粒子、繊維等が挙げられる。改質剤としては、例えば、非導電性の無機フィラー等が挙げられる。
【0013】
本発明のJEDECトレーの外枠トレー部分の相対するトレー周壁外側面に備えられている突起部分に用いられる材料としては、下記落下テストにおいて、半導体集積回路装置収納部分および/またはトレー外枠部分と同じ材料からなる突起部分が破損脱落する落下高さより、20cm以上高い落下高さを与える材料である。
落下テスト:錘を入れたトレー19枚と上蓋用トレー1枚を重ねて約5kgとし、ポリプロピレン製樹脂バンドで締結したものを、相対するトレー周壁害側面の突起部分の片方を下向きにし、トレー底面と床面の角度が75°になるように落下させ、突起部分が破損脱落する高さを測定する。
【0014】
突起部分に用いられる材料としては、前述の半導体集積回路装置収納部分とそれを囲むトレー外枠部分に用いられる材料と同じであっても異なっていてもよい。また、導電性の材料であっても、非導電性の材料であってもよい。
【0015】
半導体集積回路装置収納部分とそれを囲むトレー外枠部分に用いられる材料と、突起部分に用いられる材料は、原料としてリサイクルするときに混合しても問題の無い組合せであることが好ましい。
【0016】
突起部分に非導電性の材料を用いると、非導電性の材料は、一般に、同種の導電性の材料よりも脆くないため、脱落破損する高さが高いので好ましく、また、原料としてリサイクルするときに混合しても問題が無いことが多いので好ましい。
【0017】
突起部分に非導電性の材料を用いて、その表面を公知の方法で導電化処理してもよく、導電化処理の方法としては、例えば、帯電防止剤を塗付するコーティング法やイオン注入法等が挙げられる。
【0018】
突起部分に非導電性の材料を用いる場合には、必要に応じて、導電性トレーに非導電性部分があることを示すために、突起部分の色調を、半導体集積回路装置収納部分とそれを囲むトレー外枠部分とは異なる色調とすることが好ましい。
【0019】
突起部分として、好ましくは、垂直方向および水平方向に伸びた接合部分を有する成形品であり、突起部分が前記接合部分を有するために、接合部分がトレー外枠部分に内包され、トレー外枠部分と一体化できるものである。
【0020】
本発明のJEDECトレーの製造方法としては、射出成形加工法が挙げられ、さらに、2色射出成形法やインサート成形法を挙げることができる。好ましくは、突起部分である成形品をトレー成形用金型内の対応箇所に設置した後に、トレー成形材料を射出成型して、トレー外枠部分と一体化させるインサート成形法である。特に、既存の設備と既存の金型を用いて、容易に実施できるインサート成形が好ましい。
【0021】
インサート成形法において用いられる突起部分として、好ましくは、突起部分の形状を有する成形品であり、より好ましくは突起部分の形状に加えてインサート成形に適した形状を有する成形品であり、さらに好ましくはトレー外枠部分に内包され、トレー外枠部分と一体化できる垂直方向および水平方向に伸びた接合部分を有する成形品である。
突起部分の加工方法としては、切削加工や射出成型加工が挙げられ、好ましくは射出成形加工である。
【0022】
本発明の実施形態について図を参照して説明する。
図1は、本発明のJEDEC規格の導電性半導体集積回路装置収納用トレーの一実施形態を示した斜図である。前記トレーが、半導体集積回路装置を収納する部分とそれを囲むトレー外枠部分とを有し、前記外枠トレー部分は4つのトレー周壁外側面を有し、相対するトレー周壁外側面に突起部分を備えていることを示す。
【0023】
図2は、図1のA−A線に沿った断面図である。突起部分が垂直方向および水平方向に伸びた接合部分を有する成形品であって、前記接合部分がトレー外枠部分に内包され、トレー外枠部分と一体化していることを示す。
【0024】
図3は、図2に示した突起部分の一実施形態の4面図(正面図、側面図、上面図および底面図)である。トレー外枠部分に内包され、トレー外枠部分と一体化できる垂直方向および水平方向に伸びた接合部分を有することを示す。
【0025】
図2および図3に示すとおり、突起部分が垂直方向および水平方向に伸びた接合部分を有する成形品であって、前記接合部分がトレー外枠部分に内包され、トレー外枠部分と一体化できるため、突起部分が容易に破損脱落し難いという効果を発揮できる。
【0026】
【実施例】
以下に、本発明を実施例および比較例により詳しく述べる。
トレーの材料および突起部分の材料としては、材料A:住友化学工業株式会社製PPE系導電性耐熱ICトレー用材料であるアステム(商品名)EL160、材料B:住友化学工業株式会社製PPE系導電性耐熱ICトレー用材料であるアステム(商品名)EL160T、材料C:住友化学工業株式会社製PPE系非導電性耐熱材料のアートレックス(商品名)1160PCXTAの3種の材料を用い、表1に示したとおり、突起部分を置換したトレーと置換しなかったトレーを加工した。
【0027】
トレーの加工は、各材料のペレットを120℃で3時間の熱風乾燥し、熱風乾燥した材料を東芝機械製IS220E型射出成形機によって、材料AおよびCはシリンダー温度330℃の条件で、材料Bは340℃の条件で、オイル温度155℃で循環温調を行ったJEDEC規格トレー金型内に射出成形を行いトレー成形品を得た。
【0028】
突起部分を置換したトレーを成形する場合には、JEDEC規格トレー金型内の突起部分の設置箇所に、あらかじめ用意した突起部分を取り付けた後、上記のトレー成形方法によってインサート成形して、一体化を行った。
【0029】
突起部分が材料AおよびCのときは、各材料のペレットを120℃で3時間の熱風乾燥し、熱風乾燥した材料を、住友重機械工業製サイキャップ(商品名)0.5oz射出成形機を用いて、シリンダー温度330℃の条件で、80℃の熱水循環温調を行った図3の形状が得られる射出成形用金型内に射出成形を行い突起部分の成形品を得た。
【0030】
突起部分が材料Bのときは、トレー成形品の突起部分を切削加工して、図3の形状に加工したものを用いた。
【0031】
上記の方法で成形したトレーについて、以下の落下テストを行い、突起部分の破損脱落が発生する落下高さを測定した。
(落下テスト)
半導体集積回路装置の換わりに錘を入れたトレー19枚と上蓋用トレー1枚を重ねて約5kgとし、ポリプロピレン製樹脂バンドによって締結したものをトレー両端の突起部分の片側を下向きとし、トレー底面とコンクリート床面の角度が75°となる様に落下させ、突起部分の破損脱落が発生する高さを10cm刻みで測定した。
【0032】
トレーとしての使用に支障がないことを判定するために、半導体集積回路装置の静電気破壊からの防止に必要な導電性を評価した。半導体集積回路装置を搭載する収納部分とトレー外枠底面部分の間の導電性を、MΩ計(横河電気製,DIGITAL INSULATION TESTER 2426A)を用いて、印加電圧を500Vとして測定した。導通が10の9乗Ω以下である場合を合格(○)とし、10の9乗Ωを超えた場合を不合格(×)として判定した。
【0033】
本発明のJEDECトレーとしては、トレーの使用に支障がない程度の導電性を備え、上記の落下テストにおいて、突起部分が破損脱落する落下高さが、半導体集積回路装置収納部分および/またはトレー外枠部分と同じ材料からなる突起部分が破損脱落する落下高さより、20cm以上高い落下高さである場合を合格とした。表1に評価結果を示した。
【0034】
【表1】

Figure 0004165142
【0035】
実施例1は、本発明のトレーであり、材料Bのみからなるトレーである比較例1の突起部分を、比較例3の破損脱落高さを有するがトレーとしての使用には支障がある非導電性の材料Cからなる突起部分に置換したものであり、トレーとして使用するのに支障がない導電性を備え、突起部分が破損脱落する高さが高くなっていることが分かる。
【0036】
実施例2は、本発明のトレーであり、材料Aのみからなるトレーである比較例2の突起部分を、比較例1の破損脱落高さを有する材料Bからなる突起部分に置換したものであり、トレーとして使用するのに支障がない導電性を備え、突起部分が破損脱落する高さが高くなっていることが分かる。
【0037】
比較例1〜3は、本発明ではないトレーであり、突起部分の材料を置換しなかったトレーである。
比較例4は、本発明ではないトレーであり、突起部分の材料は置換されているが、突起部分が破損脱落する高さが高くなっていないことが分かる。
【0038】
【発明の効果】
以上、詳述したとおり、本発明によれば、突起部分が破損脱落し難いJEDEC規格の導電性半導体集積回路装置用トレーを得ることができる。
【図面の簡単な説明】
【図1】本発明のJEDEC規格の導電性半導体集積回路装置用トレーの一実施形態を示す斜図である。
【符号の説明】
1.半導体集積回路装置収納部分
2.トレー外枠部分
3.突起部分
【図2】図1のA−A線に沿った断面図である。
【符号の説明】
1.突起部分
2.トレー外枠部分
3.水平方向突起部分
4.垂直方向突起部分
【図3】本発明の突起部分の一実施形態を示す4面図である。
【符号の説明】
1.JEDECトレー突起部分
2.トレー名称等刻印部分
3.水平方向突起部分
4.垂直方向突起部分[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a tray for a conductive semiconductor integrated circuit device of JEDEC standards. More specifically, the present invention relates to a tray for a conductive semiconductor integrated circuit device conforming to JEDEC standards in which a protruding portion is difficult to break and fall off.
[0002]
[Prior art]
A conductive material is used as a material for the tray that houses the semiconductor integrated circuit device in order to prevent circuit destruction due to static electricity of the housed semiconductor integrated circuit device.
When the tray material is a polystyrene-based (hereinafter abbreviated as PS-based) conductive material or a polypropylene-based (hereinafter abbreviated as PP-based) conductive material, the cost and required characteristics of the tray are satisfied. It is low in strength and may be easily damaged.
[0003]
When a semiconductor integrated circuit device is subjected to heat treatment, a tray having no problem in heat treatment and use after heat treatment and having heat resistance is used as a tray. As a material, a polyphenylene ether type (hereinafter referred to as PPE type) is used. Abbreviated), polyethersulfone-based (hereinafter abbreviated as PES-based) and polysulfone-based (hereinafter abbreviated as PSU) thermoplastic resin containing carbon black particles and fibers are used. Has been. The tray made of the above heat-resistant conductive material is excellent in conductivity, heat resistance, dimensional stability, etc., but has a low impact resistance and may be easily damaged, particularly for PES and PSU thermoplastic resins. A tray using a heat-resistant conductive material blended with carbon fiber is excellent in heat resistance and conductivity in the antistatic region, and is not contaminated by carbon falling off, but may be brittle and easily damaged.
[0004]
With regard to the JEDEC standard conductive semiconductor integrated circuit device tray, the protruding portions at both ends of the tray may be damaged and dropped due to impact such as collision or dropping. Furthermore, recently, the environment in which the tray is used has changed. For example, the weight of the semiconductor integrated circuit device to be stored has increased, the packaging form has been changed during transportation, and the tray has been impacted or dropped. As a result of the increased impact of the tray and the fact that a tray recovery device has been introduced and the tray has been dropped from a high position and transferred to the tray collection site, new breakage and dropout have occurred. It has occurred.
[0005]
Further, when the protrusions are damaged and fallen into contact with the semiconductor integrated circuit device, the semiconductor integrated circuit device is damaged or the environment in which the semiconductor integrated circuit device is handled is contaminated. Further, if the protruding portion is damaged or dropped, it becomes difficult to reuse the tray.
[0006]
Further, in a tray for a conductive semiconductor integrated circuit device of JEDEC standard, a name, heat resistance, material, and the like are usually engraved on the protruding portions at both ends. Therefore,
When the protruding portion is damaged and dropped, the tray cannot be identified, and when the damaged tray is reused as a raw material, it becomes difficult to select the tray.
[0007]
In order to prevent breakage and dropping of the protruding portion, it is conceivable to change the material used for the tray. However, since the characteristics required for the tray and the characteristics of the material may be different, it is difficult to change the material.
[0008]
Also, existing trays are usually manufactured by injection molding using existing tray molds that are made in accordance with the characteristics of conventional materials. When the material is changed to a new material, the new material has different properties such as molding shrinkage and fluidity, so it is necessary to manufacture a new tray mold according to the new material. This is not preferable because it takes time and cost for development.
[0009]
[Problems to be solved by the invention]
An object of the present invention is to provide a tray for a conductive semiconductor integrated circuit device conforming to JEDEC standard, in which a protruding portion is difficult to break and fall off, and a method for manufacturing the same.
[0010]
[Means for Solving the Problems]
As a result of investigations, the present inventors have found that the present invention can solve the above problems, and have completed the present invention.
That is, the present invention
A tray for a conductive semiconductor integrated circuit device of JEDEC standard for storing a semiconductor integrated circuit device, the tray being rectangular and stackable, having a semiconductor integrated circuit device storage portion and a tray outer frame portion surrounding it. The outer frame tray portion has four outer surfaces of the peripheral wall of the tray, and is provided with a protruding portion on the outer surface of the peripheral wall of the tray. The present invention relates to a tray for a conductive semiconductor integrated circuit device made of a material that gives a drop height that is 20 cm or more higher than a drop height at which a protruding portion made of the same material as the tray outer frame portion breaks and drops, and a method for manufacturing the same. .
Drop test: 19 trays with weights and 1 top cover tray are stacked to make approximately 5 kg, and fastened with a polypropylene resin band. And drop so that the angle of the floor surface is 75 °, and measure the height at which the protruding portion breaks and falls off.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
As a material used for a semiconductor integrated circuit device storage portion of a tray for a conductive semiconductor integrated circuit device (hereinafter, also referred to as a JEDEC tray) of the JEDEC standard of the present invention and a tray outer frame portion surrounding the same, In addition, it is a thermoplastic resin composition that is used for a conductive semiconductor integrated circuit device tray and is called a conductive IC tray material or a conductive heat-resistant IC tray material. For example, a conductive thermoplastic resin composition composed of a thermoplastic resin, a conductive material, and a modifier can be used.
[0012]
Examples of the thermoplastic resin include thermoplastic resins such as PES resin, PSU resin, PPE resin, PS resin, polycarbonate resin, PP resin, polyethylene resin, and liquid crystal polymer resin. May be used alone, or at least two of them may be used in combination. Examples of the conductive material include conductive carbon black, metal particles, fibers, and the like. As a modifier, a nonelectroconductive inorganic filler etc. are mentioned, for example.
[0013]
In the drop test described below, the material used for the protruding portion provided on the outer surface of the outer peripheral tray wall of the outer frame tray portion of the JEDEC tray of the present invention includes a semiconductor integrated circuit device housing portion and / or a tray outer frame portion. It is a material that gives a drop height that is 20 cm or more higher than the drop height at which the protruding portion made of the same material breaks and drops.
Drop test: 19 trays with weights and 1 top cover tray are stacked to make approximately 5 kg, and fastened with a polypropylene resin band. And drop so that the angle of the floor surface is 75 °, and measure the height at which the protruding portion breaks and falls off.
[0014]
The material used for the protruding portion may be the same as or different from the material used for the aforementioned semiconductor integrated circuit device housing portion and the tray outer frame portion surrounding it. Further, it may be a conductive material or a non-conductive material.
[0015]
It is preferable that the material used for the semiconductor integrated circuit device housing portion and the tray outer frame portion surrounding the housing portion and the material used for the protruding portion be a combination that does not cause a problem even when mixed as a raw material.
[0016]
When a non-conductive material is used for the protruding portion, the non-conductive material is generally less brittle than the same type of conductive material, and hence is preferred because it has a high drop-off damage height, and when recycled as a raw material. Even if they are mixed, it is preferable because there are often no problems.
[0017]
A non-conductive material may be used for the protruding portion, and the surface may be subjected to a conductive treatment by a known method. Examples of the conductive treatment method include a coating method in which an antistatic agent is applied and an ion implantation method. Etc.
[0018]
If a non-conductive material is used for the protruding portion, if necessary, the color of the protruding portion is changed between the semiconductor integrated circuit device housing portion and that to indicate that the conductive tray has a non-conductive portion. It is preferable to have a color tone different from that of the surrounding tray outer frame portion.
[0019]
Preferably, the projecting portion is a molded article having joint portions extending in the vertical direction and the horizontal direction. Since the projecting portion has the joint portion, the joint portion is included in the tray outer frame portion, and the tray outer frame portion. And can be integrated.
[0020]
Examples of the method for producing the JEDEC tray of the present invention include an injection molding method, and further include a two-color injection molding method and an insert molding method. The insert molding method is preferably an insert molding method in which a molded product that is a protruding portion is placed at a corresponding location in a tray molding die, and then a tray molding material is injection molded to be integrated with a tray outer frame portion. In particular, insert molding that can be easily performed using existing equipment and existing molds is preferable.
[0021]
The projection part used in the insert molding method is preferably a molded article having the shape of the projection part, more preferably a molded article having a shape suitable for insert molding in addition to the shape of the projection part, more preferably It is a molded article having a joining portion that is included in the tray outer frame portion and extends in the vertical direction and the horizontal direction so as to be integrated with the tray outer frame portion.
Examples of the method for processing the protruding portion include cutting and injection molding, preferably injection molding.
[0022]
Embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a perspective view showing an embodiment of a tray for housing a conductive semiconductor integrated circuit device of JEDEC standard according to the present invention. The tray has a portion for housing a semiconductor integrated circuit device and a tray outer frame portion surrounding the portion, and the outer frame tray portion has four outer peripheral wall surfaces, and a protruding portion on the outer peripheral wall surface of the tray. It shows that it is equipped.
[0023]
FIG. 2 is a cross-sectional view taken along line AA in FIG. It is a molded product having a joint portion in which the protruding portion extends in the vertical direction and the horizontal direction, and the joint portion is included in the tray outer frame portion and integrated with the tray outer frame portion.
[0024]
FIG. 3 is a four-side view (a front view, a side view, a top view, and a bottom view) of one embodiment of the protruding portion shown in FIG. 2. It shows that it has the junction part extended in the vertical direction and the horizontal direction which are included in a tray outer frame part and can be integrated with a tray outer frame part.
[0025]
As shown in FIGS. 2 and 3, the molded part has a joint part in which the protruding part extends in the vertical direction and the horizontal direction, and the joint part is included in the tray outer frame part and can be integrated with the tray outer frame part. Therefore, it is possible to exhibit an effect that the protruding portion is not easily damaged and dropped off.
[0026]
【Example】
Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples.
As the material of the tray and the material of the protruding portion, Material A: Astem (trade name) EL160, which is a material for PPE conductive heat resistant IC tray manufactured by Sumitomo Chemical Co., Ltd., Material B: PPE system conductive manufactured by Sumitomo Chemical Co., Ltd. Astem (trade name) EL160T, which is a material for heat resistant IC trays, Material C: Three types of materials, Artrex (trade name) 1160PCXTA, a PPE non-conductive heat resistant material manufactured by Sumitomo Chemical Co., Ltd. are used in Table 1. As shown, the tray with the replaced projections and the tray without replacement were processed.
[0027]
The processing of the tray was performed by drying pellets of each material with hot air at 120 ° C. for 3 hours, and using the hot air dried material with IS220E type injection molding machine manufactured by TOSHIBA MACHINE. Was injection molded into a JEDEC standard tray mold that was circulated at a temperature of 340 ° C. and an oil temperature of 155 ° C. to obtain a tray molded product.
[0028]
When molding a tray with a replacement of the protruding part, attach the protruding part prepared in advance to the place where the protruding part is installed in the JEDEC standard tray mold, then insert-mold by the above-mentioned tray molding method and integrate Went.
[0029]
When the protrusions are materials A and C, the pellets of each material were dried with hot air at 120 ° C. for 3 hours, and the hot air dried material was added to a CYCAP (trade name) 0.5 oz injection molding machine manufactured by Sumitomo Heavy Industries, Ltd. Using this, injection molding was performed in an injection molding die that could obtain the shape shown in FIG.
[0030]
When the protruding portion was the material B, the protruding portion of the tray molded product was cut and processed into the shape shown in FIG.
[0031]
The tray formed by the above method was subjected to the following drop test, and the drop height at which the protruding portion was damaged and dropped was measured.
(Drop test)
Instead of a semiconductor integrated circuit device, 19 trays with weights and 1 top cover tray are stacked to make about 5 kg, and fastened with a polypropylene resin band, with one side of the protruding part at both ends of the tray facing downward, The concrete floor was dropped so that the angle of the concrete floor was 75 °, and the height at which the protrusions were broken and dropped was measured in increments of 10 cm.
[0032]
In order to determine that there is no hindrance to the use as a tray, the conductivity necessary for preventing the semiconductor integrated circuit device from electrostatic breakdown was evaluated. The conductivity between the housing portion where the semiconductor integrated circuit device is mounted and the bottom surface portion of the outer frame of the tray was measured using an MΩ meter (manufactured by Yokogawa Electric, DIGITAL INSULATION TESTER 2426A) at an applied voltage of 500V. The case where the continuity was 10 9 Ω or less was determined as pass (◯), and the case where the continuity exceeded 10 9 Ω was determined as reject (x).
[0033]
The JEDEC tray of the present invention has a conductivity that does not hinder the use of the tray, and in the above drop test, the drop height at which the protruding portion breaks and falls is the semiconductor integrated circuit device storage portion and / or the outside of the tray. The case where it was a drop height 20 cm or more higher than the drop height at which the protruding portion made of the same material as the frame portion was damaged and dropped was regarded as acceptable. Table 1 shows the evaluation results.
[0034]
[Table 1]
Figure 0004165142
[0035]
Example 1 is a tray of the present invention, and the protruding portion of Comparative Example 1, which is a tray made of only material B, has a break-off height of Comparative Example 3, but is a non-conductive material that hinders its use as a tray. It can be seen that the projection portion made of the material C is replaced with a conductive portion that does not hinder the use as a tray, and the height at which the projection portion is broken and dropped is high.
[0036]
Example 2 is a tray of the present invention, in which the protruding part of Comparative Example 2 which is a tray made of only material A is replaced with the protruding part made of material B having the break-off height of Comparative Example 1. It can be seen that it has conductivity that does not hinder the use as a tray, and the height at which the protruding portion is damaged and dropped is high.
[0037]
Comparative Examples 1 to 3 are trays that are not the present invention, and are trays that did not replace the material of the protruding portions.
Comparative Example 4 is a tray that is not the present invention, and although the material of the protruding portion is replaced, it can be seen that the height at which the protruding portion is damaged and dropped is not high.
[0038]
【The invention's effect】
As described above in detail, according to the present invention, it is possible to obtain a tray for a conductive semiconductor integrated circuit device conforming to the JEDEC standard in which the protruding portion is difficult to break and drop off.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an embodiment of a tray for a conductive semiconductor integrated circuit device of JEDEC standard according to the present invention.
[Explanation of symbols]
1. 1. Semiconductor integrated circuit device housing part 2. Tray outer frame part Projection Part FIG. 2 is a cross-sectional view taken along line AA in FIG.
[Explanation of symbols]
1. Projection part 2. 2. Tray outer frame part 3. Horizontal projection part Vertical Projection Portion FIG. 3 is a four-side view showing an embodiment of the projection portion of the present invention.
[Explanation of symbols]
1. JEDEC tray protrusion 2. 2. Tray name, etc. 3. Horizontal projection part Vertical protrusion

Claims (3)

半導体集積回路装置を収納するJEDEC規格の導電性半導体集積回路装置用トレーであって、
前記トレーは長方形で段積み可能であり、半導体集積回路装置収納部分とそれを囲むトレー外枠部分とを有し、
前記トレー外枠部分は4つのトレー周壁外側面を有し、相対するトレー周壁外側面に突起部分を備えており、
この突起部分が、前記トレー周壁外側面に対し直行する断面における方向に対して垂直方向および水平方向に伸びる接合部分を有し、この接合部分がトレー外枠部分に内包され、トレー外枠部分と一体化されているものであり、
前記突起部分が、下記落下テストにおいて、前記半導体集積回路装置収納部分および前記トレー外枠部分の少なくともどちらか一方と同じ材料からなる突起部分が破損脱落する落下高さより、20cm以上高い落下高さを与える非導電性の材料からなることを特徴とする導電性半導体集積回路装置用トレー。
落下テスト:錘を入れたトレー19枚と上蓋用トレー1枚を重ねて5kgとし、ポリプロピレン製樹脂バンドで締結したものを、相対するトレー周壁外側面の突起部分の片方を下向きにし、トレー底面と床面の角度が75°になるように落下させ、突起部分が破損脱落する高さを測定する。
A tray for a conductive semiconductor integrated circuit device of JEDEC standard for storing a semiconductor integrated circuit device,
The tray is rectangular and can be stacked, and has a semiconductor integrated circuit device housing portion and a tray outer frame portion surrounding it.
The tray outer frame portion has four tray peripheral wall outer surfaces, and has a protruding portion on the opposite tray peripheral wall outer surface,
The projecting portion has a joint portion extending in a vertical direction and a horizontal direction with respect to a direction in a cross-section perpendicular to the outer peripheral surface of the tray, and the joint portion is included in the tray outer frame portion, Are integrated,
In the following drop test, the protrusion portion has a drop height that is 20 cm or more higher than the drop height at which the protrusion portion made of the same material as at least one of the semiconductor integrated circuit device housing portion and the tray outer frame portion breaks and drops. A tray for a conductive semiconductor integrated circuit device comprising a non-conductive material to be applied.
Drop test: Nineteen trays with weights and one top cover tray are piled up to 5 kg, and fastened with a polypropylene resin band, with one of the protrusions on the outer surface of the opposing tray facing down, It is dropped so that the angle of the floor surface is 75 °, and the height at which the protruding portion breaks and falls off is measured.
前記突起部分の色調は、前記半導体集積回路装置収納部分とそれを囲むトレー外枠部分とは異なる色調であることを特徴とする請求項1記載の導電性半導体集積回路装置用トレー。  2. The tray for a conductive semiconductor integrated circuit device according to claim 1, wherein the color tone of the protruding portion is different from that of the semiconductor integrated circuit device housing portion and the tray outer frame portion surrounding it. 請求項1又は2に記載の導電性半導体集積回路装置用トレーの製造方法であって、前記トレーを射出成形するときに、インサート成形を行い、突起部分の接合部分をトレー外枠部分に内包させ、一体化することを特徴とする導電性半導体集積回路装置用トレーの製造方法。The method for manufacturing a tray for a conductive semiconductor integrated circuit device according to claim 1 or 2, wherein when the tray is injection-molded, insert molding is performed so that a joint portion of the protruding portion is included in the outer frame portion of the tray. A method for manufacturing a tray for a conductive semiconductor integrated circuit device, characterized in that the tray is integrated.
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Publication number Priority date Publication date Assignee Title
JP7290301B2 (en) 2018-09-19 2023-06-13 株式会社共進 Connection structure and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7290301B2 (en) 2018-09-19 2023-06-13 株式会社共進 Connection structure and its manufacturing method

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