JP4119604B2 - Recording method of phase change recording medium - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is a phase change type suitable for use in a phase change type medium having a high transmissivity, such as an optical disc capable of high density recording using a rewritable phase change type medium. The present invention relates to a recording method of a recording medium.
[0002]
[Prior art]
In recent years, with an increase in the amount of information, there has been a demand for a recording medium capable of recording and reproducing a large amount of data at high density and at high speed, and an optical disc is expected to meet such a demand. There are two types of optical discs: a write-once type that can be recorded only once and a rewritable type that can be recorded and erased many times. The types of rewritable optical disks include magneto-optical recording media using the magneto-optical effect and phase-change media (also referred to as phase-change media) using reflectivity changes accompanying reversible crystal state changes. Can be mentioned.
[0003]
This phase change medium does not require an external magnetic field, and can be recorded / erased only by modulating the power (output) of the laser beam, and has the advantage that the recording / reproducing apparatus can be miniaturized. Furthermore, when a phase change medium is used, it is possible to increase the density by using a short wavelength light source without changing the material such as the recording layer from the medium that can record and erase at a wavelength of about 800 nm, which is currently mainstream. Has the advantage of being possible.
[0004]
As a material for the recording layer using this phase change medium, a chalcogen alloy thin film is often used. For example, GeSbTe-based, InSbTe-based, GeSnTe-based, and AgInSbTe-based alloys can be used. At present, a recording method in a rewritable phase change recording medium that has been put into practical use is performed by forming an amorphous bit in a non-recorded / erased state with the recording layer in a crystalline state. Here, the amorphous bit is formed by heating the recording layer to a temperature higher than the melting point and quenching it.
[0005]
In order to prevent evaporation and deformation caused by such heat treatment of the recording layer, usually, the upper and lower sides of the recording layer are sandwiched between heat-resistant and chemically stable dielectric protective layers. Generated. In general, a metal reflection layer is provided on the upper part of the sandwich structure, and a four-layer structure promotes thermal diffusion so that an amorphous mark is stably formed.
[0006]
The metal reflective layer has a function of releasing heat generated when the recording layer is irradiated with a light beam of a recording laser beam (hereinafter, sometimes referred to as a light beam). That is, when amorphous is used in the phase change medium, the recording layer is locally melted by the light beam, and the recording layer is rapidly cooled to form an amorphous mark. . Therefore, if the heat radiation is insufficient, this amorphous mark is not formed well, so a metal reflection layer is required.
[0007]
In order to stably form an amorphous mark, a pulse division method for dividing a laser pulse for forming a mark is generally performed. When a reference clock cycle is T, a pulse train having a cycle T is marked. A method of irradiating depending on the length is often used. At this time, in order to make the temperature distribution in the mark uniform, the width of the first pulse (first pulse) is made longer than the width of the second and subsequent pulses.
[0008]
In this pulse division method, an amorphous film having a length of nT is obtained by alternately irradiating a phase change recording medium with a recording power Pw having a relatively high power value and a bias power Pb having a relatively low power value. A method of forming quality marks. Here, n is a natural number of 4 or more.
In other words, the output pattern (pulse pattern) of the light beam is divided into a plurality of pulses (recording pulses) output at a high power and pulses (off pulses) output at a low power, and these high and low powers alternate. Repeated. Regarding the pulse width in the conventional pulse division method, in any pulse, the pulse width output at high power and the pulse width output at low power are each about 0.5T.
[0009]
The pulse pattern for forming the amorphous mark is disclosed in the following publicly known documents 1-3. Known document 1 ("The Feasibility of High Data Rate 4.7 GB Media with Ag-In-Sb-Te Phase Change Material", "Proceedings of the 10th Symposium of the 10th Phase Change Recording Society") The technology is described.
[0010]
Also, in publicly known document 2 ("Rewritable Dual-Layer Phase-Change Optical Disk", Jpn.J.Appl.Phys.Vol.38 (1999) pp.1679-1686), a rewritable phase change having a multilayer structure is described. A technique relating to an optical disk using a mold medium is described, and this known document 2 discloses a write pulse pattern.
Furthermore, the known document 3 (Japanese Patent Laid-Open No. 3-185628 [US Pat. No. 5,109,373]) focuses on an optical disk that records and reproduces optical information at high speed and high density using a laser beam or the like. A technique for recording a signal on an optical information recording member and a technique relating to a recording apparatus are described, and a satisfactory value of the repetition period τ in the intermediate pulse train is described.
[0011]
On the other hand, erasure (crystallization) is performed by heating the recording layer to a temperature higher than the crystallization temperature of the recording layer and lower than the melting point. In this case, the dielectric protective layer functions as a heat storage layer, and keeps the recording layer at a high temperature sufficient for solid phase crystallization.
In addition, in a so-called 1-beam overwritable phase change medium, it is known that the above erasing and re-recording processes can be performed only by intensity modulation of one focused light beam (Jpn. J. Appl. Phys. 26 (1987), suppl. 26-4, pp. 61-66). Further, by using a phase change medium capable of overwriting one beam, the layer structure of the recording medium and the circuit configuration of the recording drive device are simplified. For this reason, a system using a phase change medium capable of overwriting one beam has been attracting attention as being capable of low-cost, high-density and large-capacity recording.
[0012]
In recent years, with the aim of further increasing the density, multilayer recording media have been studied. That is, it is an attempt to increase the recording density by superposing two or more recording medium portions separated by a distance larger than the focal depth of the optical system used. In this case, when viewed from the incident direction of the laser beam, the recording medium unit other than the farthest recording medium unit transmits the laser beam, and thus requires a high transmittance of 30% or more.
[0013]
For this reason, in order to transmit laser light, the above-mentioned metal reflection layer is basically not used, or even when a metal reflection layer is used, it is necessary to make it thin enough to obtain sufficient light transmission. Become.
[0014]
[Problems to be solved by the invention]
However, when the metal reflective layer is not provided, or when the metal reflective layer is thin, the heat dissipation effect is insufficient, so that recrystallization is likely to occur when forming the amorphous mark, and it is clean. There is a problem that it is difficult to form an amorphous mark.
[0015]
There is a measure to prevent recrystallization by changing the composition of the recording layer to slow the crystallization rate and the like. However, this time, since the crystallization speed is slow, crystallization of the amorphous mark in the portion irradiated with the erasing power (hereinafter referred to as the erasing power irradiation portion) after the amorphous mark is formed is not possible. There is a problem that the amorphous mark cannot be erased.
[0016]
That is, when recording on a phase change type medium having no metal reflection layer or thin, it becomes difficult to prevent recrystallization of the mark during recording while maintaining a sufficient erasure rate of the erasing power irradiation part, There is a problem that a range of crystallization speeds usable as a rewritable recording medium is narrowed.
The present invention was devised in view of such problems, and in a rewritable phase change recording medium, amorphous marks can be easily formed and erased even if the reflective layer is thin or not. Another object of the present invention is to provide a recording method for a phase change recording medium that can be performed without narrowing the range of crystallization speed that can be used.
[0017]
[Means for Solving the Problems]
  Therefore, the gist of the present invention is that at least a phase change recording medium having a phase change recording layer is provided.,A high power energy beam with a relatively high power value and50% or less of the erasing power that can sufficiently crystallize an amorphous mark at the time of overwritingThe recording medium is alternately irradiated with a low power energy beam having a relatively low power value.,The phase change recording layer has a length nT (T is a reference clock period, n is a natural number of 4 or more).TheA recording method of a phase change recording medium for forming an amorphous mark, which is provided immediately before a leading pulse, which is a section in which the high power energy beam is first irradiated, and the low power energy beam is first set. A low power pulse irradiation step before irradiation for time yT (y is a number greater than or equal to 0), and irradiation of the low power energy beam for a second set time xT (x is a number greater than 0) provided immediately after the head pulse. And a subsequent low power pulse irradiation step, and there is a relationship of 0.95 ≦ x + 0.7 * y ≦ 2.5 between the x and the y,The time for irradiating the leading pulse is shorter than the second set time xT,In addition, the irradiation period of each subsequent pulse, which is a subsequent period of irradiation with a high power energy beam, lies in the range of 0.5T to 1.5T.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
The present inventor found that, in a phase change recording medium having a structure with a small heat dissipation effect, mark recrystallization during recording tends to proceed from the front end of the mark toward the rear end of the mark. I found out. Then, the inventors have found that the recrystallization of the mark can be prevented by devising the rapid cooling of the front end portion of the mark, that is, the portion where the mark starts to be formed, and the present invention has been achieved.
[0019]
According to the present invention, when recording is performed using the pulse division method, in a series of pulse patterns for forming an amorphous mark, a long off pulse is inserted adjacent to the recording pulse for forming the front end portion of the mark. Therefore, the mark front end portion can be particularly rapidly cooled, and recrystallization can be prevented.
That is, in the series of pulse patterns, recrystallization can be prevented by changing only the recording pulse and the off pulse forming the front end portion of the mark from the conventional method. According to the present invention, other pulse patterns can use pulse division using conventional techniques, so that there are few technical changes and circuit design is facilitated.
[0020]
The present invention can be applied to, for example, an optical disc having a phase change recording layer. In general, an optical disk is formed with a spiral or concentric groove, and recording / reproduction is performed using a land portion between the grooves or between the grooves as a recording track. For example, in a CD-RW, DVD-RW, or the like, which is a kind of phase change optical disc, an amorphous mark is formed in a crystalline recording layer with the inside of the groove as a recording track.
[0021]
In addition, these optical discs usually have a protective layer / phase change recording layer / protective layer / reflective layer on a substrate. Alternatively, in a medium having two or more recording layers for increasing the capacity, etc., a protective layer / phase change type recording layer / protective layer / resin layer / protective layer / phase change type recording layer / protective layer are formed on the substrate. / May have a reflective layer. Or two such optical disks may be bonded together. In either case, recording / reproduction is performed by entering an energy beam from the substrate side. In some cases, the layer configuration on the substrate is completely reversed, and recording / reproduction is performed with an energy beam incident from the opposite side of the substrate.
[0022]
The present invention is a medium that does not have a reflective layer adjacent to the recording layer or a reflective layer via a protective layer, or a very thin reflective film having a thickness of 30 nm or less via the reflective layer or protective layer adjacent to the recording layer. The effect is remarkable in a medium having a layer.
In other words, when a medium having a conventional reflective layer having a normal thickness is easily recrystallized, the effect of preventing recrystallization by rapidly cooling the mark front end is relatively small.
[0023]
There are several recrystallization processes, but typical ones are considered as follows. When forming an amorphous mark, the formed amorphous region is recrystallized from the edge between the amorphous region and the surrounding crystal region.
According to the study of the present inventors, in the case of a medium with a small heat dissipation effect, recrystallization is likely to occur from the vicinity of the center of the mark front end, particularly in the width direction of the mark (direction perpendicular to the track direction) From there, it is presumed to proceed toward the rear end of the mark. On the other hand, in the case of a medium having a large heat dissipation effect, it is presumed that recrystallization proceeds easily from the end in the width direction of the mark toward the center.
[0024]
Since the present invention rapidly cools the front end of the mark and suppresses recrystallization, when applied to a medium having a small heat dissipation effect, the progress of recrystallization from the front end of the mark to the rear end can also be suppressed, and the effect is particularly high. . Therefore, in the case of a medium that does not have a reflective layer adjacent to the recording layer or a protective layer, or a very thin reflective layer having a thickness of 30 nm or less via the reflective layer or protective layer adjacent to the recording layer. The effect is remarkable in the medium which has.
[0025]
For example, when the phase change recording medium is a medium having two or more phase change recording layers with another layer interposed therebetween, as described above, the phase farther from the recording / reproducing energy beam is used. Since it is necessary to allow the energy beam to reach the changeable recording layer, a thick reflective layer cannot be provided in the optical path up to that time. Therefore, the phase change recording layer closer to the beam does not have a reflective layer adjacent to the recording layer or a reflective layer via a protective layer, or has a very thin reflective layer having a film thickness of 30 nm or less. It will be limited to. The present invention is highly effective when used for recording on a phase change recording layer closer to the recording / reproducing energy beam of such a medium.
In the present invention, it is necessary to rapidly cool this portion in order to prevent recrystallization of the mark front end. First, the pulse pattern will be described with reference to FIGS.
[0026]
FIG. 1 is a laser pulse waveform diagram showing an example of a pulse pattern used in the recording method of the present invention. The horizontal axis represents time, and the vertical axis represents laser power. Pw is the recording power, Pe is the erasing power, Pb is the bias power, and Pr is the reproducing power. Basically, recording power Pw and bias power Pb are used for mark formation, and erasing power Pe is used for erasing. The reproduction power Pr is used for reproducing the recorded information.
In the following description, a pulse output at high power (recording power Pw) may be referred to as a recording pulse, and a section irradiated with the recording pulse may be referred to as a recording pulse section or a recording power irradiation section. This corresponds to a high power laser irradiation unit.
[0027]
In addition, a pulse output at a low power (bias power Pb) may be referred to as an off pulse, and a section in which the off pulse is irradiated may be referred to as an off pulse section or a bias power irradiation section. This corresponds to a low power laser irradiation unit.
FIG. 1 shows an example in which a mark having a length of 10T (T represents a reference clock period) is formed. The pulse pattern shown in FIG. 1 is divided into, for example, nine recording pulses labeled 1 to 9. In general, when forming a mark of length nT, the number m of recording pulses is any one of n, n-1, and n-2. In the case of FIG. 1, m = n-1.
[0028]
The power values of these nine recording pulses 1 to 9 are equal to the recording power Pw, and the power values of the off pulses before and after each recording pulse are equal to the bias power Pb. Further, the irradiation power value in the section other than the recording pulse and off-pulse irradiation is equal to the erasing power Pe.
Usually, the recording power Pw is preferably 20 mW or less, and more preferably 14 mW or less. In general, a phase change optical recording medium is more preferable as a medium capable of recording with a low laser power. This is because the output of the laser used is small. However, the recording power Pw is preferably 8 mW or more. The fact that recording is possible with too low power means that the recording is likely to deteriorate during reproduction.
[0029]
The erasing power Pe may be selected so as to sufficiently crystallize the old amorphous mark to be erased during overwriting (overwriting). Usually, it is about 30% to 70% of the recording power Pw.
The reproduction power Pr is the power of the beam irradiated when reproducing the recorded information, and a low value is selected so that the recorded information is not erased. Usually, it is 0.5 to 1.0 mW.
[0030]
The bias power Pb is selected so that the recording layer heated by the recording power Pw is rapidly cooled to form an amorphous mark. In order to increase the cooling rate of the recording layer, the bias power Pb is preferably small. Speaking of the ratio of the bias power Pb and the erasing power Pe, usually Pb / Pe ≦ 0.5, and preferably Pb / Pe ≦ 0.3. In consideration of tracking performance and the like, the bias power Pb is preferably close to or the same value as the reproduction power Pr.
[0031]
According to the recording method of the present invention, a phase change type recording medium having a phase change type recording layer includes at least a high power energy beam having a relatively high power value and a low power energy beam having a relatively low power value. Recording on a phase change recording medium in which the recording medium is alternately irradiated to form an amorphous mark having a length nT (T is a reference clock period, n is a natural number of 4 or more) on the phase change recording layer. A low-power pre-stage which is provided immediately before the first pulse, which is a section in which the high power energy beam is first irradiated, and which irradiates the low power energy beam for a first set time yT (y is a number of 0 or more). A pulse irradiation step, and a post-stage low power pulse irradiation step that is provided immediately after the head pulse and irradiates the low power energy beam with a second set time xT (x is a number greater than 0). The provided, between the x and the y, a relationship of 0.95 ≦ x + 0.7 * y ≦ 2.5.
[0032]
That is, in this recording method, the width of the off-pulse section before and after the head pulse (recording pulse 1) shown in FIG. 1 is made longer than in the case of using the conventional pulse division method.
In the pulse pattern of FIG. 1, a low power of width xT is provided between the first pulse (recording pulse 1) and the second pulse (recording pulse 2) of the mark forming division pulse for rapid cooling of the mark front end. An off pulse is provided. Here, x represents a number larger than 0.
[0033]
According to the study by the present inventors, when at least the conditions such as the laser power are in a normal range, the mark front end portion can be obtained when the time width of the low power laser irradiation portion (off pulse) xT is remarkably longer than the conventional one. As a result, it was clarified that excellent recording characteristics can be obtained. Hereinafter, an off pulse having a width xT after the recording pulse 1 may be referred to as an xT pulse.
[0034]
It is also effective to provide an off pulse having a width yT immediately before the head pulse. Here, y represents a number of 0 or more. Hereinafter, an off pulse having a width yT before the recording pulse 1 may be referred to as a yT pulse.
If the sum of x and 0.7 * y is too small, the effect of rapid cooling of the mark front end cannot be obtained. Therefore, it is set to 0.95 or more. Preferably it is 1.3 or more. Also, if the sum of x and 0.7 * y is too large, the old amorphous mark is not erased, or the amorphous part due to the first pulse and the amorphous part after the recording pulse are optically separated. There is a possibility of being. Therefore, it is set to 2.5 or less. Preferably it is 2.0 or less.
[0035]
Further, the value of y may be small or zero. When y is 0, the head pulse, which is the first section for irradiating the recording power Pw, is irradiated for a predetermined time (head pulse irradiation step), and is provided immediately after the head pulse irradiation step. It is also possible to irradiate xT for two set times (the latter low power pulse irradiation step), and this x can be in a relationship of 0.95 ≦ x ≦ 2.5. That is, it is effective to simply lengthen the xT pulse without providing the yT pulse.
[0036]
However, in order to obtain the same cooling effect without providing yT, it is necessary to lengthen the xT pulse, so that the recording pulse 1 comes out earlier, and the length of the mark formed as a whole can be lengthened. There is sex. Therefore, it is preferable and effective to combine both xT pulse and yT pulse.
If the value of x is too small, recrystallization at the front end portion of the mark is difficult to be suppressed. Therefore, it is usually set to 0.1 or more, and preferably 0.3 or more. However, if the value of x is too large, the old amorphous mark may not be erased, or the amorphous part due to the first pulse and the amorphous part after the recording pulse may be optically separated. Therefore, it is usually set to 2.0 or less.
[0037]
If the value of y is too large, crystallization of the old mark may still be insufficient at the time of overwriting.
The present invention is preferably used when the mark is formed in a pulse pattern having two or more recording pulses. A short mark such as a 3T mark (n = 3 in an nT mark) may be formed with a pulse pattern having only one recording pulse. When there is only one recording pulse, only the bias power Pb or the erasing power Pe is irradiated after the recording pulse 1, and therefore it is relatively easy to cool down. On the other hand, when there are two or more recording pulses, even if there is an off-pulse after the recording pulse 1, the recording pulse 2 with high power is irradiated next, so that it is difficult to be rapidly cooled. Therefore, as in the present invention, the effect of lengthening the xT pulse and the yT pulse is great. Therefore, the present application is preferably applied to the formation of a mark having a length of 4T mark (n = 4 in the nT mark) or more.
Next, the pulse widths of the recording pulses 1 to 9 shown in FIG. 1 will be described with reference to FIG.
[0038]
FIG. 2 is an explanatory diagram of a pulse width in an example of a pulse pattern used in the recording method of the present invention. The total number of recording pulses shown in FIG. 2 is m (m represents a natural number), and a case where m = 6 is shown as an example. Further, each recording pulse 1 to 6 has a pulse width α.₁T ~ α₆T and each recording pulse is followed by β₁T ~ β₆There is an off pulse with a pulse width of T. The total time width of the m recording pulses and the m off pulses substantially corresponds to the mark length nT. Therefore, the following expression (3) is established.
[0039]
Σ^m _{i = 1}(Α_i+ Β_i) ≒ n (3)
i is a natural number, and α_iIs a coefficient for determining the i-th recording pulse width, β_iIs a coefficient for determining the i-th off-pulse width. Σ^m _{i = 1}(Α_i+ Β_i) For (α between 1 and m)_i+ Β_i). Where Σ^m _{i = 1}(Α_i+ Β_i) Need not be exactly equal to n, and is usually on the order of n-2 to n + 2.
[0040]
Here, the pulse width α of the leading pulse (recording pulse 1) shown in FIG.₁If T is too long, the mark is easily recrystallized without being able to suppress recrystallization even if it is heated too much and the front and back off pulses are lengthened. Therefore, 1.5T or less is preferable, 1.0T or less is more preferable, and 0.8T or less is more preferable. However, if it is too short, the temperature of the recording layer will not rise sufficiently, so that it is preferably 0.2 T or more, more preferably 0.3 T or more.
[0041]
The pulse width α₁It is preferable that T is shorter than the second set time xT because the rapid cooling effect of the mark front end is increased.
Furthermore, the pulse width α of the second and subsequent recording pulses_iIf T (i is a natural number satisfying i ≧ 2) is too long, it is difficult to suppress recrystallization, so 0.8T or less is preferable, and 0.6T or less is more preferable. However, if it is too short, the temperature of the recording layer will not rise sufficiently, so that it is preferably 0.2 T or more, more preferably 0.3 T or more.
[0042]
In addition, the last β_m(For example, β₆) Is normally 0T to 1.5T, and the length of the amorphous mark can be controlled by changing the width. This is because if it is too long, crystallization of the old mark may be insufficient during overwriting.
In the present invention, the irradiation period of each subsequent pulse (after recording pulse 2), which is a section in which the high power energy beam is irradiated following the first pulse (recording pulse 1), is set to a value close to 1T. Specifically, it is 0.5T or more and 1.5T or less. Here, the period is the time width from the rise of the recording pulse to the rise of the next recording pulse.
[0043]
That is, α_i+ Β_iThe value of (i is a natural number i = 2 to m−1) is a value close to 1. Specifically, it is 0.5 or more and 1.5 or less. α_i+ Β_iWhen the value of (i is a natural number where i = 2 to m−1) is greatly different from 1, the following problem arises.
To form an amorphous mark, β_iIt is necessary to increase the cooling rate to some extent. But α_i+ Β_iIs much less than 1, β_iCan not be sufficiently increased, the cooling rate is reduced and the mark is easily recrystallized. Conversely, β_iIf α is increased, α_iAnd the temperature of the recording layer does not rise sufficiently.
[0044]
Meanwhile, α_i+ Β_iAn example in which the value of (i is a natural number of i = 2 to m−1) much larger than 1 is described in Japanese Patent Laid-Open No. 9-134525 (US Pat. No. 5,732,062). However, for example, α_i+ Β_iWhen the value of is fixed at a certain value of 2 or more, if the recording pulse (and the accompanying off pulse) is increased by one, the mark length increases by 2T. Therefore, in this recording method, an nT mark and an (n + 1) T mark are used. In addition, two types of marks having a difference of 1T cannot be recorded and separated.
[0045]
So, for example, α_i+ Β_iBy adding a recording pulse (and an associated off pulse) with a value of 1 to somewhere in the nT mark pulse pattern to form a (n + 1) T mark pulse pattern, the nT mark length and (n + 1) The difference in T mark length is set to 1T.
That is, α_i+ Β_iThe value of (i is a natural number of i = 2 to m−1) is not uniform, and different values such as 1 and 2 are mixed.
[0046]
However, α_iAnd β_iValue greatly affects the temperature distribution and temperature change process in the recording layer._iAnd β_iIn the portions having different values, the temperature distribution and the temperature change process are greatly different, and it becomes difficult to control the mark shape including the mark length. Since the size of the recrystallized region after melting, which is related not only to the ultimate temperature but also to the cooling rate, has a significant effect on the temperature distribution of the recording layer, the mark shape changes in a complex manner depending on the temperature distribution of the recording layer, etc. .
[0047]
Α is set so that the difference between the nT mark length and the (n + 1) T mark length is 1T under a specific recording condition._iAnd β_iIt may be possible to determine the value of. However, this is a value that can be applied only to very narrow recording conditions, and there is a high possibility that the mark length difference will deviate greatly from 1T just by slightly changing the recording conditions such as recording power. For example, such a problem occurs when the recording power is changed or the recording apparatus is changed to change the light intensity distribution in the laser beam spot.
[0048]
It is α_i+ Β_iThis is because the method of changing the temperature distribution or the like of the recording layer with respect to the change of the recording condition is different if the value of is different. For example α_i+ Β_iWhen the value of 1 and 2 are different, the method of changing the mark shape is different with respect to the change of the recording condition.
On the other hand, as in the present invention, α_i+ Β_iWhen the value of (natural number i = 2 to m−1) is close to 1, by adding one pulse to the pulse train at the center of the mark forming pulse, the mark is only 1T without greatly changing the temperature distribution. Such a problem is unlikely to occur because it can be lengthened. α_i+ Β_iThis is because since the value of (i = 2 to m−1) is constant, the change in temperature distribution caused by changing the recording power is the same for any mark length.
[0049]
According to the present invention, since recrystallization during recording is suppressed by rapid cooling of only the front end portion of the mark, it is not necessary to further change the irradiation period of each of the second and subsequent recording pulses. Accordingly, the irradiation period of each subsequent pulse (recording pulse 2 and later), which is a section in which the high power energy beam is irradiated following the head pulse (recording pulse 1), is set to a value close to 1T.
[0050]
However, especially when the mark is short, the temperature distribution at the front end and the rear end of the mark changes somewhat by adding a pulse._i+ Β_iIn some cases, the value of (natural number i = 2 to m−1) should be slightly shifted from 1. Therefore, the irradiation period of each pulse of the high power energy beam is 0.5 T or more, preferably 0.8 T or more. Further, it is 1.5T or less, preferably 1.2T or less.
[0051]
In addition, the last α_m+ Β_mMay be greater than 1.5. For example, the pulse width β of the off pulse at the end_mThis is because changing the T has the purpose of controlling the length of the amorphous mark.
In this way, even when recording is performed on a thin medium that does not have a reflective layer adjacent to the phase change recording layer or a protective layer, or is recorded on a thin medium, a sufficient erasure rate is maintained when erasing power is irradiated. Further, recrystallization of marks during recording can be prevented, and recording can be performed without narrowing the range of usable crystallization speeds. Further, since the influence of recrystallization is more remarkable in mark length modulation recording, the effect of the present invention is more remarkable in mark length modulation recording.
Next, the configuration of a phase change recording medium suitable for applying the present invention will be described. First, materials used for the recording layer will be described.
[0052]
The present invention is particularly effective when applied to a medium in which a material that is easily recrystallized is used for the recording layer. Examples of such a material that is easily recrystallized include a material having a composition in which Sb is contained in excess of the SbTe eutectic point composition.
As a specific example of such a recording layer, (Sb_1-aTe_1-a)_bM_1-b(0.6 <a <0.9, 0.7 <b <1, M is Ge, Ag, In, Ga, Zn, Sn, Si, Cu, Au, Pd, Pt, Pb, Cr, Co, O , S, Se, V, Nb, Ta).
[0053]
A recording layer having a composition containing Sb in excess of the SbTe eutectic point composition is a so-called Ge layer that is usually used as a recording layer of a phase change recording medium.₂Sb₂Te_FiveIt tends to be recrystallized more easily than the recording layer having the composition. The reason why the amorphous mark tends to recrystallize is not necessarily clear in the recording layer of this composition, but in this recording layer, no crystal nuclei are formed in the amorphous mark, While recrystallization proceeds from the edge of the crystalline region of Ge, Ge₂Sb₂Te_FiveSince the formation of crystal nuclei is observed in the recording layer having the composition, it is considered that one of the reasons is that the recrystallization mechanism is different.
[0054]
In a recording layer having such a composition and having a small heat dissipation effect, recrystallization tends to occur from the vicinity of the center of the mark front end, particularly in the width direction of the mark (direction perpendicular to the track direction). It is presumed that the vehicle proceeds from the mark toward the rear end of the mark.
Since the present invention rapidly cools the front end of the mark and suppresses recrystallization, when applied to a medium having a small heat dissipation effect, the progress of recrystallization from the front end of the mark to the rear end can also be suppressed, and the effect is particularly high. . Therefore, the effect is remarkable when the medium does not have a reflective layer adjacent to the recording layer or a protective layer via a protective layer or has a very thin reflective layer with a film thickness of 30 nm or less.
[0055]
For example, when the phase change recording medium is a medium having two or more phase change recording layers with another layer interposed therebetween, as described above, the phase farther from the recording / reproducing energy beam is used. Since it is necessary to allow the energy beam to reach the changeable recording layer, a thick reflective layer cannot be provided in the optical path up to that time. Therefore, the phase change recording layer closer to the beam does not have a reflective layer adjacent to the recording layer or a reflective layer via a protective layer, or has a very thin reflective layer having a film thickness of 30 nm or less. It will be limited to. The present invention is highly effective when used for recording on a phase change recording layer closer to the recording / reproducing energy beam of such a medium.
[0056]
Next, the layer structure of the phase change recording medium of the present invention will be described with reference to FIG. FIG. 3 is a schematic diagram showing an example of the layer structure of the phase change recording medium. The phase change recording medium 10 shown in FIG. 3 includes a reflective layer 10a, a recording medium part 1, a resin layer 10e, a recording medium part 2, and a substrate 10i. Further, the incident direction of the light beam is a direction from the lower side to the upper side in FIG.
[0057]
Here, the reflective layer 10a has a function of reflecting the light beam and diffusing heat from the recording layer 10c flowing in through the protective layer 10b. The recording medium unit 1 includes protective layers 10b and 10d and a recording layer 10c. Further, the protective layers 10b and 10d respectively adjust the reflectance by controlling the amount of light beam absorbed in the recording layer 10c, and also control the heat radiation from the recording layer 10c to suppress thermal deformation of the recording layer 10c. It is.
[0058]
Further, the recording layer 10c is made of a phase change material, the crystal state is reversibly changed, and the optical characteristics thereof are changed. Further, the resin layer 10e exhibits a spacer function for adjusting the position of the recording layer 10c to the focal length of the light beam.
Similarly, the recording medium unit 2 includes protective layers 10f and 10h and a recording layer 10g, and these protective layers 10f and 10h and the recording layer 10g are the protective layers 10b and 10d, respectively. Further, since it has the same function as the recording layer 10c, further description is omitted.
[0059]
Moreover, the board | substrate 10i forms a recessed part in the surface. As the substrate material, resins such as polycarbonate, polyacrylate, polyolefin, or glass can be used. In this embodiment, since the light beam is incident through the substrate, the substrate 10i needs to be transparent. For the resin layer 10e, the same material as that of the substrate 10i can be used.
[0060]
The material of the reflective layer 10a will be described. The reflective layer material preferably has a high reflectivity and thermal conductivity. Examples of the reflective layer material having a high reflectance and thermal conductivity include metals containing Ag, Au, Al, Cu and the like as main components. Among these, Ag has the highest reflectance and thermal conductivity.
Since Au, Cu, and Al absorb light more easily than Ag at short wavelengths, it is particularly preferable to use Ag when using a short wavelength laser of 650 nm or less. Further, Ag is preferable because it is relatively inexpensive as a sputtering target, has a stable discharge, has a high deposition rate, and is stable in the air.
[0061]
Ag, Al, Au, Cu, etc. are not preferable in this respect because impurities are mixed with them, and the thermal conductivity and reflectivity are lowered. However, stability and film surface flatness may be improved, and 5 atomic% or less. About Cr, Mo, Mg, Zr, V, Ag, In, Ga, Zn, Sn, Si, Cu, Au, Al, Pd, Pt, Pb, Ta, Ni, Co, O, Se, Nb, Ti, An impurity element such as N may be included. The thickness of the reflective layer is usually 50 to 200 nm. If it is too thin, sufficient reflectivity and heat dissipation effect cannot be obtained. If it is too thick, it is not preferable in terms of film stress, production time and cost.
[0062]
In this embodiment, no reflective layer is provided between the protective layer 10f and the resin layer 10e. Since it is necessary to allow the light beam to reach the recording layer 10c, it is not possible to provide a thick reflective layer in the optical path up to that time. However, it may be provided if it is a very thin reflective layer having a film thickness of 30 nm or less. More preferably, it is 20 nm or less.
[0063]
In the above layer structure, the recording method of the present invention is particularly effective for recording on the recording medium unit 2. This is because the recording medium unit 2 requires a high transmittance, and therefore has only a very thin reflective layer that does not have a reflective layer, and therefore has a small heat dissipation effect.
Next, materials and the like of the protective layers 10b, 10d, 10f, and 10h will be described. The materials of these protective layers 10b, 10d, 10f, and 10h are determined in consideration of the refractive index, thermal conductivity, chemical stability, mechanical strength, adhesion, and the like. In general, a metal having high transparency and a high melting point, a semiconductor oxide, a sulfide, a nitride, or a fluoride such as Ca, Mg, or Li can be used. Note that these oxides, sulfides, nitrides, and fluorides do not necessarily have a stoichiometric composition, and it is also effective to change the composition or use a mixture for controlling the refractive index and the like. is there.
[0064]
In consideration of repeated recording characteristics, the material of the protective layers 10b, 10d, 10f, and 10h is preferably a dielectric mixture. More specifically, a mixture of ZnS or rare earth sulfide and a heat-resistant compound such as oxide, nitride or carbide can be used. For example, ZnS and SiO₂Are often used in the protective layer of phase change optical disks. The film density of these protective layers 10b, 10d, 10f, and 10h is desirably 80% or more of the bulk state from the viewpoint of mechanical strength.
[0065]
Further, regarding the thickness, if the thickness of the dielectric layer (protective layer) is less than 10 nm, the effect of preventing deformation of the substrate 10i and the recording layers (recording layers 10c, 10g) is insufficient, and the protective layers 10b, 10d, There is a tendency not to serve as 10f and 10h. On the other hand, when the thickness exceeds 500 nm, when the dielectric layer is placed on the substrate 10i, the warping is proportional to the thickness of the film, so that cracks are likely to occur.
In particular, the lower protective layers 10d and 10h each need to suppress substrate deformation due to heat, and preferably have a thickness of 70 nm or more. This is because when the thickness is less than 70 nm, microscopic substrate deformation is accumulated during repeated overwriting, and reproduction light is scattered, resulting in a significant increase in noise.
[0066]
Further, the upper limit of the thickness of the protective layers 10b, 10d, 10f, and 10h is substantially about 200 nm depending on the film formation time. However, when the thickness is larger than 200 nm, the groove shape as viewed on the recording layer surface is obtained. Is not preferable because it will change. That is, it is not preferable because the groove depth becomes shallower than the intended shape on the surface of the substrate 10i, and the groove width becomes narrower than the intended shape on the surface of the substrate 10i. More preferably, it is 150 nm or less.
[0067]
The thickness of the recording layers 10c and 10g is preferably in the range of 3 nm to 20 nm. More preferably, it is 5-10 nm. This is because if the recording layers 10c and 10g are thin, it is difficult to obtain a sufficient contrast between the reflectance in the crystalline state and the reflectance in the amorphous state, and initial crystallization becomes difficult. . On the other hand, if it is too thick, the amount of transmitted light tends to be small.
The thicknesses of the recording layers 10c and 10g and the protective layers 10b, 10d, 10f, and 10h are determined by absorption of laser light in consideration of interference effects in addition to the limitations on the mechanical strength and reliability. A signal that is efficient and has a large amplitude of the recording signal, that is, a contrast between the recorded state and the unrecorded state is selected.
[0068]
The protective layers 10b, 10d, 10f, and 10h, the recording layers 10c and 10g, and the reflective layer 10a are usually formed using a sputtering method. Further, the target for the recording layer, the target for the protective layer, and, if necessary, the target for the reflective layer material may be formed on a sputtering apparatus (in-line apparatus) installed in the same vacuum chamber to oxidize each layer. This is desirable in terms of preventing contamination. It is also excellent in terms of productivity.
[0069]
The present invention is not limited to the above-described embodiments and modifications thereof, and various modifications can be made without departing from the spirit of the present invention.
The energy beam used for recording is not limited to laser light, and other devices can also be used.
[0070]
【Example】
ZnS-SiO on a 0.6 mm thick polycarbonate substrate with guide grooves₂Lower protective layer (thickness 100 nm), Ge₈Sb₆₅Te₂₇Recording layer (thickness 7 nm), ZnS-SiO₂An upper protective layer (thickness: 160 nm) was formed by a sputtering method, and a protective coating made of an ultraviolet curable resin was further formed on the upper protective layer. Here, the depth of the guide groove of the substrate is 33 nm, the width of the guide groove is 348 nm, and the groove pitch is 0.74 μm.
[0071]
This optical disk is irradiated with DC (direct current) light having a linear velocity of 1.8 m / s and an output power of 3 mW using an optical disk evaluation apparatus having an optical system with a laser wavelength of 635 nm and a numerical aperture NA of 0.6. As a result, initial crystallization occurred.
Thereafter, the following measurements were performed. All signals were recorded in the guide groove.
[0072]
First, the erasure rate indicating the ratio of returning from amorphous to crystal was measured. The conditions at this time are shown below. A single pattern signal having a mark length of about 10T and a length of about 10T between the marks is recorded with a linear velocity of 3.8 m / s and a reference clock period T of 38.2 ns (1 / 26.16 MHz). Recording was performed in the guide groove at each output of power Pw = 11 mW, erasing power Pe = 1 mW, bias power Pb = reproduction power Pr = 1 mW. Here, using the pulse pattern shown in FIG._i(I ≧ 1) = 0.3, β_i(I ≧ 2) = 0.7, x = 0.7, and y = 0.
[0073]
The inventor measured the erase rate by irradiating the signal thus recorded with DC light having a predetermined erase power Pe at a linear velocity of 3.8 m / s. The result is as shown in FIG.
FIG. 4 is a diagram showing the transition of the erasure rate with respect to the erasing power Pe. As shown in FIG. 4, an erasing rate of about 25 dB was obtained at an erasing power Pe = 3.5 mW. The C / N ratio of the signal before erasure was 52 dB.
[0074]
Next, recording was performed on the disk, and the jitter was measured by reproduction. Under the same recording conditions as in the above recording, the erasing power Pe is set to 3.5 mW at which the best erasing rate is obtained, the recording power Pw = 11 mW, and the pulse pattern shown in FIG._i(I ≧ 1) = 0.3, β_i(I ≧ 2) = 0.7, y = 0, and the value of x was changed to record a similar single pattern. The thus recorded signal was reproduced at a linear velocity of 3.8 m / s and a reproduction power Pr = 0.8 mW, and jitter was measured. The result is shown in FIG.
[0075]
FIG. 5 is a diagram showing the relationship between x and jitter in the latter-stage low-power pulse irradiation unit. It can be seen that the jitter is large when the value of x is small, whereas the jitter is small when x is large. Here, from the reproduced waveform when x was small, it was observed that the front end of the mark was crystallized.
Subsequently, the same measurement was performed while changing the value of y with x = 0.7. The result is shown in FIG.
[0076]
FIG. 6 is a diagram showing the relationship between y and jitter of the former low power pulse irradiation unit. As the value of y increases, the jitter also decreases. That is, it can be seen that both x and y are effective in reducing jitter.
FIG. 7 is a diagram showing the relationship between x + 0.7 * y and jitter. As shown in FIG. 7, from the experiment, the value of (x + 0.7 * y) and the jitter correspond well, and when (x + 0.7 * y) ≧ 0.95, the jitter is 10 ns or less, , (X + 0.7 * y) ≧ 1.3, the jitter was 6.5 ns or less.
The transmittance was about 55% when the recording layer was in an amorphous state, and about 47% when the recording layer was in a crystalline state.
[0077]
The transmittance was determined as follows. A laser having a wavelength of 635 nm is passed through a polycarbonate substrate having a thickness of 0.6 mm and Al having a thickness of 200 nm._99.5Ta_0.5Reflected light quantity I when film is regenerated₁In addition, a 200 nm-thick Al film is passed through the optical disk of this example._99.5Ta_0.5Reflected light quantity I when film is regenerated₂Was measured. The transmittance is (I₂/ I₁)^1/2* Calculated by the formula of 100 (%).
[0078]
In addition, there were some characteristic distributions in the disk that were thought to be caused by the thin substrate and the tendency to warp, the transmitted light and the non-uniform protective coat.
As described above, it can be seen that by setting x and y within a specific range, an amorphous mark can be easily formed and erased without a reflective layer.
[0079]
【The invention's effect】
Therefore, as described in detail above, according to the recording method of the present invention, there is an advantage that it is possible to prevent recrystallization of recording marks peculiar to a thin phase change medium even without a metal reflective layer in the phase change medium. In addition, since conventional pulses can be used except for the front end portion of the divided pulse, there are advantages in that there are few technical changes and circuit design can be facilitated.
[0080]
Even if the mark length is recorded on a thin phase change recording medium that does not have a metal reflective layer, it can prevent recrystallization of the mark during recording while maintaining a sufficient erasure rate of the erasing power irradiation section, and can be used. There is an advantage that the narrowing of the range of the conversion speed can be solved.
[Brief description of the drawings]
FIG. 1 is a laser pulse waveform diagram showing an example of a pulse pattern used in a recording method of the present invention.
FIG. 2 is an explanatory diagram of a pulse width in an example of a pulse pattern used in the recording method of the present invention.
FIG. 3 is a schematic diagram of a layer structure of a phase change recording medium.
FIG. 4 is a diagram showing a transition of an erasing rate with respect to an erasing power in an example.
FIG. 5 is a diagram illustrating a relationship between x and jitter of a subsequent low power pulse irradiation unit in an example.
FIG. 6 is a diagram illustrating a relationship between y and jitter of a preceding-stage low power pulse irradiation unit in an example.
FIG. 7 is a diagram illustrating a relationship between x + 0.7 * y and jitter in an example.
[Explanation of symbols]
1, 2 Recording medium part
10 Phase change recording media
10a Reflective layer
10b, 10d, 10f, 10h Protective layer
10c, 10g recording layer
10e Resin layer
10i board

Claims (8)

A phase change type recording medium having a phase change type recording layer has at least a high power energy beam having a relatively high power value and 50% of erasing power capable of sufficiently crystallizing an amorphous mark upon overwriting. and irradiating the recording medium are alternately two types of low-power energy beam having the relatively low power values, the length nT (T is a reference clock period in the phase change type recording layer, n represents 4 or more forming the amorphous mark natural number), a recording method for a phase change type recording medium,
A pre-stage low power pulse irradiation step that is provided immediately before the first pulse, which is a section in which the high power energy beam is first irradiated, and that irradiates the low power energy beam for a first set time yT (y is a number of 0 or more);
A post-stage low power pulse irradiation step that is provided immediately after the leading pulse and irradiates the low power energy beam with a second set time xT (x is a number greater than 0);
There is a relationship of the following formula (1) between the x and the y (* represents multiplication),
0.95 ≦ x + 0.7 * y ≦ 2.5 (1)
The time for irradiating the leading pulse is shorter than the second set time xT,
A recording method for a phase-change recording medium, wherein an irradiation period of each subsequent pulse, which is a subsequent period of irradiation with a high power energy beam, is 0.5T or more and 1.5T or less.   The recording method for a phase change recording medium according to claim 1, wherein y is a number greater than zero.   The recording method of a phase change recording medium according to claim 1, wherein 1.3 ≦ x + 0.7 * y ≦ 2.0.   The recording method for a phase change recording medium according to claim 1, wherein the phase change recording layer is composed of a composition containing Sb in excess of the SbTe eutectic point composition. 5. The recording method for a phase change recording medium according to claim 4, wherein the phase change recording layer comprises a component represented by the following general formula (2) as a main component.
(Sb _1-a Te _1-a ) _b M _1-b (2)
(Where a is a real number in the range of 0.6 <a <0.9, b is a real number in the range of 0.7 <b <1, and M is Ge, Ag, In, Ga, Zn, Sn. , Si, Cu, Au, Pd, Pt, Pb, Cr, Co, O, S, Se, V, Nb, represents at least one element selected from Ta, and Ta ) Phase change type recording medium is a medium having no reflective layer over the reflective layer or a protective layer adjacent to the phase change type recording layer, a phase change type according to any one of claims 1 to 5 records Media recording method. Phase change type recording medium, the film thickness over the reflective layer or a protective layer adjacent to the phase change type recording layer is a medium having the following reflection layer 30 nm, according to any one of claims 1 to 5 Recording method for phase change type recording medium. The phase change recording medium is a medium having two or more phase change recording layers with other layers interposed therebetween, and recording is performed on the phase change recording layer closer to the energy beam. there, the recording method of the phase-change recording medium according to any one of claims 1 to 7.

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