JP4118557B2 - Crucible for producing hollow columnar silicon ingot, method for producing hollow columnar silicon ingot, method for producing member for plasma etching apparatus, device for producing hollow columnar silicon ingot, and hollow columnar silicon ingot - Google Patents

Description

【００３５】
【表２】

【００３６】
表１及び表２に示されるように、実施例１〜４，１１，１２においては、中空部を形成するための切削加工を施すことがないので、クラック発生率が低く、製造されるプラズマエッチング装置用部材の歩留まりを大きく向上させることができたことが分かる。
しかも、溶融したシリコンを凝固させる際に、中空の柱状部材の内周面に形成された黒鉛層によって、十分な冷却効果をシリコンインゴットの中空部付近に与えることができたので、製造されたプラズマエッチング装置用部材の酸素濃度を非常に低く抑制することができた。
【００３７】
これに対して、従来例１，２，３では、柱状シリコンインゴットを製造した後に、中空部を形成する切削加工において、この切削加工に起因するクラックが多く発生したことにより、非常に多くの不良品が出て、歩留まりを低下させてしまった。
さらには、冷却効果が十分に与えられていなかったために、プラズマエッチング装置用部材の酸素濃度が上昇してしまった。
【００３８】
【発明の効果】
本発明による中空柱状シリコンインゴット製造用るつぼによれば、底部に中空の柱状部材が載置されていることから、るつぼ内に単結晶または多結晶シリコンを添加・溶融して、凝固させるだけで、容易に中空柱状のシリコンインゴットを製造することが可能となり、また、この中空柱状シリコンインゴットを切断加工すれば、中空部を有するプラズマエッチング装置用部材を容易に製造することが可能となるので、従来のように中空部を形成するためのくり抜き切削加工が必要とならず、この切削加工に起因するクラックの発生をなくすことができ、製品の歩留まりを高く保つことができる。
しかも、シリコンインゴットの中空部を形づくる柱状部材は、単にるつぼの底部に載置されているだけであるので、その自由度が高くなっており、これにより、凝固したシリコンが冷却される際の熱収縮を吸収することができて、るつぼに割れなどが発生してしまうことがない。
【００３９】
また、本発明による中空柱状シリコンインゴットの製造方法によれば、本発明のるつぼを用いたので、中空柱状シリコンインゴットを容易に製造することができる。
また、本発明によるプラズマエッチング装置用部材の製造方法によれば、本発明によって製造される中空柱状シリコンインゴットを、その横方向に切断することにより、中空部を有するプラズマエッチング装置用部材を容易に製造することができ、従来のように、中空部を形成するための切削加工に起因するクラックが生じることがない。
また、本発明による中空柱状シリコンインゴットの製造装置によれば、中空柱状シリコンインゴットを容易に製造することができる。
【図面の簡単な説明】
【図１】 本発明の実施形態による中空柱状シリコンインゴット製造用るつぼを示す断面図である。
【図２】 本発明の実施形態による中空柱状シリコンインゴットの製造装置を示す断面図である。
【図３】 本発明の実施形態による中空柱状シリコンインゴットの製造装置の変形例を示す断面図である。
【図４】 本発明の実施形態によって得られる中空柱状シリコンインゴットを示す斜視図である。
【図５】 本発明の実施形態による中空柱状シリコンインゴット製造用るつぼの変形例を示す断面図である。
【図６】 プラズマエッチング装置を示す断面図である。
【図７】 従来のシリコンインゴット製造用るつぼを示す断面図である。
【図８】 従来のシリコンインゴット製造用るつぼを用いて製造されるシリコンインゴットを示す斜視図である。
【図９】 従来のプラズマエッチング装置用部材を製造する工程を示す説明図である。
【図１０】 従来のプラズマエッチング装置用部材を製造する工程で生じる問題点を示す説明図である。
【符号の説明】
１ 円筒状シールド部材（プラズマエッチング装置用部材）
２ リング状部材（プラズマエッチング装置用部材）
２０ シリコン
３０ 中空柱状シリコンインゴット製造用るつぼ
３２ 底部
３３ 柱状部材
３６ 黒鉛層
４０ 中空柱状シリコンインゴットの製造装置
４２ 支持台
４６ ヒータ（加熱部）
５０ 中空柱状シリコンインゴット
５１ 中空部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for producing a hollow columnar silicon ingot as a material for producing various members made of silicon constituting a plasma etching apparatus for a silicon wafer, a crucible for producing the same, and a device for producing a hollow columnar silicon ingot , hollow pillar-shaped silicon ingot, as well as those concerning the manufacturing method for a plasma etching apparatus member.
[0002]
[Prior art]
As shown in FIG. 6, for example, a silicon wafer plasma etching apparatus has a cylindrical shield member 1 for preventing contamination of elements from the outside, and a ring shape for holding a silicon wafer W placed on a pedestal. The member 2 and the etching electrode E are mainly configured.
The plasma etching apparatus members 1 and 2 constituting the plasma etching apparatus are made of the same material as the silicon wafer W, that is, high-purity silicon, for the purpose of preventing impurities from being mixed into the silicon wafer W. These are formed in common and have a substantially ring shape or a substantially cylindrical shape having a hollow portion.
[0003]
In order to manufacture these various plasma etching apparatus members 1 and 2, first, as shown in FIG. 7, as shown in FIG. 7, quartz made of a cylindrical outer wall 11 and a disk-shaped bottom portion 12 that closes the cylindrical outer wall 11 is used. A cylindrical silicon ingot 21 as shown in FIG. 8 is manufactured by adding single crystal or polycrystalline silicon 20 to the crucible 10, melting the silicon 20 by heating with a heater, and then solidifying the silicon 20.
Next, the cylindrical silicon ingot 21 is cut along, for example, a cutting line indicated by a two-dot chain line in FIG. 8 to form a substantially disk-like or substantially cylindrical member, and then the center A member for a plasma etching apparatus having a substantially ring shape or a substantially cylindrical shape having a hollow portion 22 as shown in FIGS. 9 (a) and 9 (b) is formed by cutting so as to penetrate through. It will be.
[0004]
[Problems to be solved by the invention]
However, in such a manufacturing method, a hollow columnar silicon ingot in which a hollow portion is formed from the beginning cannot be manufactured. Therefore, the manufacturing process takes time, and in addition, a cutting process for forming the hollow portion 22 is performed. As a result, as shown in FIG. 10, cracks are likely to be generated from the hollow portion 22 toward the outer side, which has been a serious problem in reducing the yield of products.
[0005]
This invention is made | formed in view of the said subject, and it aims at providing the crucible which can manufacture a hollow columnar silicon ingot easily, and the hollow columnar silicon ingot manufactured using this.
Moreover, an object of this invention is to provide the manufacturing method and manufacturing apparatus of a hollow columnar silicon ingot which can manufacture a hollow columnar silicon ingot easily.
It is another object of the present invention to provide a method for manufacturing a member for a plasma etching apparatus that can maintain a high yield.
[0006]
[Means for Solving the Problems]
In order to solve the above-described problems and achieve such an object, a crucible for producing a hollow columnar silicon ingot according to the present invention is a crucible used for producing a silicon ingot. Alternatively, a plurality of columnar members are erected, and the specific gravity of the columnar members is set larger than that of silicon .
With such a configuration, it is possible to easily produce a hollow columnar silicon ingot simply by adding and melting single crystal or polycrystalline silicon in a crucible and solidifying it. Can be easily manufactured, the plasma etching apparatus member having a hollow portion can be easily manufactured. Therefore, the conventional cutting process for forming the hollow portion is not required. It is possible to eliminate the occurrence of cracks due to the above.
Moreover, since the columnar member that forms the hollow portion of the silicon ingot is merely erected at the bottom of the crucible, the degree of freedom is high, and this causes the heat when the solidified silicon is cooled. The shrinkage can be absorbed and the occurrence of defects such as cracks in the crucible can be prevented.
[0007]
Further, the specific gravity of the columnar member, because it is larger than silicon pillars placed on the bottom of the crucible, without thereby lifted in the molten silicon in a crucible, a hollow pillar-shaped silicon ingot Can be stably produced.
[0008]
Moreover, it is preferable that the columnar member is hollow and a graphite layer is formed at least on the inner peripheral surface thereof.
With such a configuration, when the silicon melted in the crucible is solidified, the vicinity of the hollow portion of the hollow columnar silicon ingot is sufficiently cooled by the graphite layer formed on at least the inner peripheral surface of the hollow columnar member. Thus, it is possible to prevent crystal defects from being generated near the hollow portion and easily cracking, or the columnar member from melting and lowering the purity.
[0009]
The method for producing a hollow columnar silicon ingot according to the present invention is characterized in that single crystal or polycrystalline silicon is added to the crucible of the present invention, and is melted and then solidified.
In particular, at this time, if the single crystal or polycrystalline silicon melted in the crucible is solidified in one direction, the crystal components of the hollow columnar silicon ingot to be produced are arranged in one direction, and the good properties A hollow columnar silicon ingot having the following can be obtained.
[0010]
The method for manufacturing a member for a plasma etching apparatus according to the present invention is for a plasma etching apparatus having a hollow portion by cutting the hollow columnar silicon ingot manufactured by the method for manufacturing a hollow columnar silicon ingot of the present invention in the lateral direction. A member is manufactured.
As described above, when the hollow columnar silicon ingot is cut in the lateral direction so as to intersect the hollow portion, a member for a plasma etching apparatus in which no crack is generated in the hollow portion can be easily formed.
[0011]
The hollow columnar silicon ingot producing apparatus according to the present invention is characterized in that the crucible for producing the hollow columnar silicon ingot of the present invention is placed on a support base made of a heat insulating material.
Here, when the heating units are arranged above and below the crucible, when the silicon melted in the crucible is solidified, the heating unit is stopped by stopping any one of the heating by the upper and lower heating units. It is possible to solidify in one direction from the direction of the arrangement.
In addition, when a heating unit is arranged beside the crucible and the heating unit can set a temperature gradient in the vertical direction of the crucible, when the silicon melted in the crucible is solidified, the temperature in the heating unit is increased. It can be solidified in one direction from the lower one.
[0012]
The hollow columnar silicon ingot according to the present invention is characterized by using the crucible for producing the hollow columnar silicon ingot according to the present invention, adding single crystal or polycrystalline silicon into the crucible, melting and then solidifying. And
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view of a crucible for producing a hollow columnar silicon ingot according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of an apparatus for producing a hollow columnar silicon ingot having the crucible.
[0014]
The crucible 30 for producing a hollow columnar silicon ingot according to the present embodiment is made of quartz, and includes a substantially cylindrical outer wall 31 and a substantially disc-shaped bottom 32 as shown in FIG. A columnar member 33 having a cross-sectional area smaller than the area of the bottom portion 32 is placed and erected in a substantially central portion so as to protrude upward from the bottom portion 32.
[0015]
The columnar member 33 has a hollow shape composed of a substantially cylindrical outer wall 34 and a substantially disc-shaped bottom portion 35, and has a shape in which the upper side of the hollow portion is open, that is, a crucible shape. Yes.
Therefore, the hollow columnar silicon ingot producing crucible 30 of the present embodiment is configured such that an inner crucible having a smaller diameter than the outer crucible is placed on the bottom of the outer crucible.
[0016]
Further, a graphite layer 36 having a thermal expansion coefficient equivalent to that of silicon is formed on the inner peripheral surface of the hollow portion of the columnar member 33 over the entire surface of the outer wall 34 and the bottom portion 35.
Further, a substantially disc-shaped lid 37 made of quartz is attached to the upper side of the columnar member 33 so as to close the opening of the hollow portion.
[0017]
The crucible 30 having the above configuration is used in a hollow columnar silicon ingot manufacturing apparatus 40 as shown in FIG.
The hollow columnar silicon ingot manufacturing apparatus 40 is attached to a support base 42 for supporting the crucible 30 and a lower part of the support base 42 in a case 41 to be maintained in an inert gas atmosphere. A shaft portion 45 that rotates the crucible 30 together with the base 42 and heaters 46 and 46 (heating portions) that are respectively disposed above and below the crucible 30 and melt the silicon 20 added to the crucible 30 were accommodated. Is.
[0018]
The support base 42 is made of a heat insulating material, and includes an outer wall 43 formed in a shape surrounding the outer wall 31 of the crucible 30 and a mounting surface 44 on which the bottom 32 of the crucible 30 is mounted.
When the crucible 30 is placed on the support base 42, the outer periphery of the crucible 30 is surrounded by the support base 42.
[0019]
In order to manufacture a hollow columnar silicon ingot using such a manufacturing apparatus 40, the crucible 30 is rotated by the shaft portion 45 in a case 41 maintained in an inert gas atmosphere such as argon, for example. The single crystal or polycrystalline silicon 20 is added to the inside 30, and the silicon 20 is melted by heating by the heaters 46, 46 disposed above and below the crucible 30.
For example, by stopping the heating by the heater 46 disposed below the crucible 30, the silicon 20 that has been melted in the crucible 30 is moved upward from its lower side, that is, from the bottom 32 side. It solidifies in one direction towards the side.
[0020]
As a modification of the hollow columnar silicon ingot manufacturing apparatus 40, as shown in FIG. 3, the heater 46 is disposed so as to go around the crucible 30, and the temperature in the vertical direction of the crucible 30 is set. It may be a gradient that can be set. In such a manufacturing apparatus 40, first, the silicon 20 is added into the crucible 30, heated and melted by the heater 46, and the temperature of the heater 46 increases from the lower side to the upper side of the crucible 30. By setting the temperature gradient to be higher, the molten silicon 20 is solidified in one direction from the bottom 32 side to the upper side.
[0021]
When the silicon 20 melted in the crucible 30 is completely solidified, the solidified silicon 20 is taken out from the crucible 30 to obtain a hollow cylindrical silicon ingot 50 having a hollow section 51 having a circular cross section as shown in FIG. be able to.
[0022]
The hollow columnar silicon ingot 50 manufactured as described above is cut along the cutting line indicated by the two-dot chain line in FIG. 4 in the lateral direction, that is, in the direction orthogonal to the direction in which the hollow part 51 extends, A member for a plasma etching apparatus having a substantially ring shape or a substantially cylindrical shape as described above is manufactured by performing various processes as necessary.
At this time, the size and shape of the plasma etching apparatus member to be manufactured may be measured in advance, and the size and shape of the outer wall 31 of the crucible 30 and the columnar member 33 may be set based on this.
[0023]
According to the present embodiment, since the columnar member 33 is placed and erected on the bottom 32 of the crucible 30 so as to protrude upward, a silicon ingot can be manufactured using the crucible 30. The hollow columnar silicon ingot 50 having the hollow portion 51 can be manufactured naturally. Further, if the hollow columnar silicon ingot 50 is cut, the member for the plasma etching apparatus having the hollow portion as described above can be easily obtained. Obtainable.
Thus, in order to form a member for a plasma etching apparatus, it is necessary to cut a cylindrical silicon ingot that is not formed with a hollow portion and then perform a hollow cutting process for forming the hollow portion as in the prior art. Therefore, it is possible to eliminate cracks resulting from this cutting process, and it is possible to significantly improve the yield of the manufactured plasma etching apparatus member.
[0024]
Further, the columnar member 33 that forms the hollow portion 51 of the hollow columnar silicon ingot 50 is merely placed and erected on the bottom 32 of the crucible 30, so that the degree of freedom is high (in some cases). The molten silicon 20 slightly enters between the columnar member 33 and the bottom 32 of the crucible 30 and the columnar member 33 and the bottom 32 of the crucible 30 are not in contact with each other). It is possible to absorb the heat shrinkage when the steel is cooled, and to prevent the crucible 30 from being cracked during the solidification.
[0025]
Furthermore, since the columnar member 33 is made of quartz and has a specific gravity greater than that of silicon, the columnar member 33 placed on the bottom 32 is lifted by the silicon 20 melted in the crucible 30. In this way, the hollow columnar silicon ingot 50 can be manufactured stably.
In order to prevent such lifting, the columnar member 33 may be placed on the bottom 32 of the crucible 30 and bonded.
[0026]
Further, since the columnar member 33 is hollow and a graphite layer 36 having a thermal expansion coefficient equivalent to that of silicon is formed on the inner peripheral surface thereof, the solidified silicon 20 melted in the crucible 30 is solidified. Can provide a sufficient cooling effect by the graphite layer 36 in the vicinity of the hollow portion 51 of the silicon ingot 50 formed by the columnar member 33. As a result, the crystal lattice defects in the vicinity of the hollow portion 51 are reduced, the strength is improved, and the oxygen of the columnar member 33 is not dissolved into the silicon 20 by heat, and the oxygen concentration is low and the purity is high. A columnar silicon ingot 50 can be obtained.
At this time, the lid 37 is attached to the upper opening in the hollow portion of the columnar member 33 to close the opening of the hollow portion, thereby preventing heat diffusion and higher. A cooling effect can be obtained.
Note that the graphite layer 36 is not formed only on the inner peripheral surface of the hollow portion of the columnar member 33 but may be formed so as to fill the entire hollow portion.
[0027]
Further, since the produced hollow columnar silicon ingot 50 is solidified in one direction from the lower side to the upper side, the crystal components are aligned in one direction, and the obtained hollow columnar silicon ingot 50 In particular, excellent properties can be imparted.
[0028]
Further, the shape of the columnar member 33 is not limited to that shown in FIG. 1. For example, as shown in FIG. 5, the columnar member 33 in FIG. 1 is turned upside down, that is, The opening of the hollow part of the columnar member 33 may be directed downward and the opening may be placed on the bottom 32 of the crucible 30. In this case, the upper side of the hollow portion is closed by the bottom portion 35. Further, the columnar member 33 may be hollow and may have a substantially cylindrical shape in which both the upper side and the lower side of the hollow part are open.
As described above, even if the opening of the hollow portion of the columnar member 33 is placed on the bottom portion 32, the silicon 20 melted in the crucible 30 does not enter the hollow portion of the columnar member 33. The above-described effects can be achieved without any inferiority.
Further, the columnar member 33 may be solid rather than hollow.
[0029]
Furthermore, in this embodiment, the cross-sectional shape of the columnar member 33 is constant in the vertical direction, but it is also possible to form the columnar member 33 such that the cross-sectional shape changes in the vertical direction.
For example, the size of the cross-sectional shape of the columnar member 33 may gradually decrease as it goes from the lower side to the upper side, and conversely increases as it goes from the upper end side to the lower end side. You may do it.
With such a configuration, the cross-sectional shape of the hollow portion 51 in the manufactured hollow columnar silicon ingot 50 is continuously changed in the vertical direction, and is formed by cutting one hollow columnar silicon ingot 50. A plurality of members for a plasma etching apparatus can be mixed with a member having a substantially ring shape or a substantially disk shape having hollow portions having different diameters.
[0030]
Further, for example, if a projecting portion projecting in the lateral direction is locally formed on the columnar member 33 to form a stepped shape, the hollow formed by the columnar member 33 in the portion where the projecting portion is formed. The columnar silicon ingot 50 can be formed in the hollow portion 51 with a portion where the inner diameter is locally increased. Similarly, from one hollow columnar silicon ingot 50, a substantially ring shape or a substantially cylindrical shape having different shapes. A plurality of members for a plasma etching apparatus can be obtained.
In particular, after cutting the hollow columnar silicon ingot 50 obtained by the crucible 30 in which the shape of the projecting portion of the columnar member 33 is appropriately designed, if necessary, the member is processed to have a complicated shape. It is also possible to obtain
[0031]
Further, by changing the shape of the columnar member 33 of the crucible 30 in the vertical direction, the shape of the outer wall 31 of the crucible 30 is not only changed, but also the cross-sectional shape of the hollow portion 51 of the obtained hollow columnar silicon ingot 50 is changed. The cross-sectional shape of the obtained hollow columnar silicon ingot 50 may be changed by changing the vertical direction.
[0032]
In the present embodiment, the number of the columnar members 33 placed on the bottom 32 of the crucible 30 is one, but the present invention is not limited to this, and a plurality of columnar members 33 are placed on the placement 33. A hollow columnar silicon ingot 50 having a plurality of hollow portions 51 may be manufactured. If such a hollow columnar silicon ingot 50 is cut in the lateral direction, for example, an etching electrode of a plasma etching apparatus having a plurality of hollow portions It is also possible to manufacture (a member for a plasma etching apparatus).
Furthermore, in the present embodiment, the substantially columnar (substantially cylindrical) hollow columnar silicon ingot 50 having the hollow portion 51 having a circular cross section is manufactured. The shapes of the outer wall 31 and the columnar member 33 of the crucible 30 may be set so that a substantially prismatic hollow columnar silicon ingot 50 having a hollow portion 51 can be manufactured.
[0033]
【Example】
Hereinafter, an example in which a member for a plasma etching apparatus is formed by manufacturing and cutting a hollow columnar silicon ingot using an example of the present invention is used as an example, and a conventional ordinary crucible (single crucible) is used. Then, after the columnar silicon ingot was manufactured and cut, an evaluation test was conducted using a member for a plasma etching apparatus formed by cutting the hollow portion as a comparative example.
Here, the results of evaluation tests using the crucible made of quartz as Examples 1 to 4 and Comparative Examples 1 and 2 are shown in Table 1, and the crucible made of graphite is used in Examples 11 and 12. Table 2 shows the results of the evaluation test used as Comparative Example 11.
Further, the thickness of the columnar member indicates the thickness of the outer wall of the columnar member that is hollow, and the shape of the columnar member is any one of FIGS. 1 and 5 described in the above embodiment. The crack generation rate is the ratio at which cracks occurred during the manufacture of the plasma etching apparatus member, resulting in defective products.
[0034]
[Table 1]

[0035]
[Table 2]

[0036]
As shown in Table 1 and Table 2, in Examples 1 to 4, 11, and 12, since the cutting process for forming the hollow portion is not performed, the rate of occurrence of cracks is low, and plasma etching is manufactured. It can be seen that the yield of the device member can be greatly improved.
Moreover, when the molten silicon is solidified, the graphite layer formed on the inner peripheral surface of the hollow columnar member can provide a sufficient cooling effect near the hollow portion of the silicon ingot. The oxygen concentration of the etching apparatus member could be suppressed to a very low level.
[0037]
On the other hand, in the conventional examples 1, 2, and 3, after manufacturing the columnar silicon ingot, in the cutting process for forming the hollow portion, a large number of cracks resulting from this cutting process occurred, so that a large number of defects occurred. A good product came out and lowered the yield.
Furthermore, since the cooling effect has not been sufficiently provided, the oxygen concentration of the member for the plasma etching apparatus has increased.
[0038]
【The invention's effect】
According to the crucible for producing a hollow columnar silicon ingot according to the present invention, since a hollow columnar member is placed at the bottom, simply adding and melting single crystal or polycrystalline silicon in the crucible, solidifying, A hollow columnar silicon ingot can be easily manufactured, and if this hollow columnar silicon ingot is cut and processed, a member for a plasma etching apparatus having a hollow portion can be easily manufactured. Thus, it is not necessary to perform a hollow cutting process for forming the hollow portion, and it is possible to eliminate the occurrence of cracks due to the cutting process, and to maintain a high product yield.
Moreover, since the columnar member that forms the hollow portion of the silicon ingot is merely placed on the bottom of the crucible, the degree of freedom is high, and this causes the heat when the solidified silicon is cooled. The shrinkage can be absorbed, and the crucible is not cracked.
[0039]
Moreover, according to the method for producing a hollow columnar silicon ingot according to the present invention, since the crucible of the present invention is used, the hollow columnar silicon ingot can be easily produced.
In addition, according to the method for manufacturing a member for a plasma etching apparatus according to the present invention, a member for a plasma etching apparatus having a hollow portion can be easily obtained by cutting the hollow columnar silicon ingot manufactured according to the present invention in the lateral direction. It can be manufactured, and there is no occurrence of cracks due to the cutting process for forming the hollow portion as in the prior art.
Moreover, according to the manufacturing apparatus of the hollow columnar silicon ingot by this invention, a hollow columnar silicon ingot can be manufactured easily.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a crucible for producing a hollow columnar silicon ingot according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a hollow columnar silicon ingot manufacturing apparatus according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view showing a modification of the hollow columnar silicon ingot manufacturing apparatus according to the embodiment of the present invention.
FIG. 4 is a perspective view showing a hollow columnar silicon ingot obtained by an embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a modified example of a crucible for producing a hollow columnar silicon ingot according to an embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a plasma etching apparatus.
FIG. 7 is a cross-sectional view showing a conventional crucible for producing a silicon ingot.
FIG. 8 is a perspective view showing a silicon ingot manufactured using a conventional crucible for manufacturing a silicon ingot.
FIG. 9 is an explanatory view showing a process for manufacturing a conventional member for a plasma etching apparatus.
FIG. 10 is an explanatory view showing a problem that occurs in a process of manufacturing a conventional member for a plasma etching apparatus.
[Explanation of symbols]
1 Cylindrical shield member (Plasma etching equipment member)
2 Ring-shaped member (member for plasma etching equipment)
20 Silicon 30 Crucible for producing hollow columnar silicon ingot 32 Bottom 33 Columnar member 36 Graphite layer 40 Hollow columnar silicon ingot production device 42 Support base 46 Heater (heating unit)
50 Hollow columnar silicon ingot 51 Hollow part

Claims (9)

A crucible used for manufacturing a silicon ingot, wherein one or a plurality of columnar members are erected on the bottom, and the specific gravity of the columnar members is set larger than that of silicon. A crucible for producing a hollow columnar silicon ingot. The crucible for producing a hollow columnar silicon ingot according to claim 1 , wherein the columnar member is hollow and a graphite layer is formed on at least an inner peripheral surface thereof. Crucible. A method for producing a hollow columnar silicon ingot using the crucible for producing a hollow columnar silicon ingot according to claim 1 , wherein single crystal or polycrystalline silicon is added and melted in the crucible. Then, a method for producing a hollow columnar silicon ingot characterized by solidifying. The method for producing a hollow columnar silicon ingot according to claim 3 , wherein the single crystal or polycrystalline silicon melted in the crucible is solidified in one direction. A member for a plasma etching apparatus having a hollow part is manufactured by cutting a hollow columnar silicon ingot manufactured by the method for manufacturing a hollow columnar silicon ingot according to claim 3 or 4 in the lateral direction. A method for producing a member for a plasma etching apparatus. A hollow columnar silicon ingot producing apparatus, wherein the crucible for producing a hollow columnar silicon ingot according to claim 1 or 2 is placed on a support base made of a heat insulating material. The apparatus for manufacturing a hollow columnar silicon ingot according to claim 6 , wherein heating units are arranged above and below the crucible. 7. The silicon ingot manufacturing apparatus according to claim 6 , wherein a heating part is disposed beside the crucible, and the heating part is capable of setting a temperature gradient in a vertical direction of the crucible. Ingot manufacturing equipment. A crucible for producing a hollow columnar silicon int according to claim 1 or 2 , wherein single crystal or polycrystalline silicon is added to the crucible and melted and then solidified. Hollow columnar silicon ingot.

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