JP4079066B2 - Semiconductor device, circuit board, and electro-optical device - Google Patents

Description

  The present invention relates to a semiconductor device, a circuit board, and an electro-optical device.

  In recent years, various electronic devices such as computers and portable information devices have been remarkably developed. With the development of these electronic devices, there has been an increase in liquid crystal display devices, especially electronic devices equipped with color liquid crystal display devices with high display capabilities. is doing. A color liquid crystal display device requires a signal line for controlling each of a red pixel, a green pixel, and a blue pixel to be in an on state (for example, a light transmission state) or an off state (for example, a light blocking state). The signal lines are usually arranged on the substrate at a constant pitch. For example, a 120 × 160 dot liquid crystal display device requires 120 signal lines (for example, gate lines) and 160 signal lines (for example, source lines) for each color pixel. Therefore, in the color liquid crystal display device, the number of signal lines formed on the substrate increases, and the pitch is inevitably reduced.

  In recent years, in order to mainly realize high-density mounting, a semiconductor device in which a driver circuit for driving a liquid crystal display device is formed is often mounted on the substrate. For example, portable devices, notebook personal computers, and electronic devices such as PDA (Personal Data Assistance) are placed in a situation where size and weight are reduced because portability is important. Under such circumstances, since the outer shape is limited, the semiconductor device mounted on the substrate is made into a long chip. Further, in recent years, the function of the driver circuit has been added, so that the further long chip of the semiconductor device has been added. It is planned.

  Many so-called Au bumps are used for mounting such semiconductor devices. When this Au bump is formed, a seed layer such as TiW / Au is sputtered on the semiconductor element, the resist is patterned, and then an electric field Au plating having a height of about 20 μm is applied. However, as the pitch of the electrodes of the semiconductor device is reduced, it is predicted that stable bump formation such as high aspect resist formation or seed layer etching becomes difficult.

Therefore, Patent Document 1 discloses a technique for forming a protruding electrode by providing a resin-made protruding portion at a position away from the electrode and providing a connection pattern that covers and connects the surface of the protruding portion as a conductive layer. ing. According to this technique, it is easy to form a small-diameter protruding electrode and contribute to the reduction in the size of the semiconductor chip, and the elasticity of the resin protrusion can absorb the stress at the time of mounting and contribute to the stabilization of the mounting quality.
Japanese Unexamined Patent Publication No. Hei 8-1959797

However, the following problems exist in the conventional technology as described above.
Since the linear expansion coefficient of the semiconductor device and the linear expansion coefficient of the substrate are different, if the temperature cycle is applied while the semiconductor and the substrate are bonded, the change in the bump pitch of the semiconductor device and the change in the wiring pitch of the substrate are equal. I will not do it. For this reason, there is a possibility that stress is applied to the junction between the semiconductor and the substrate, and the conduction between the bump and the wiring cannot be obtained.

Further, when the pitch of the bump and the wiring is reduced, there is a problem that an allowable range of deviation at the time of bonding the bump and the wiring is narrowed, and it is difficult to ensure conduction between the desired bump and the wiring.
Further, even when the semiconductor device and the substrate are bonded, if the temperature cycle is applied, the bump pitch change and the wiring pitch change do not coincide with each other, so that it is difficult to align the bump and the wiring with a desired accuracy. There was a problem.

  The present invention has been made in consideration of the above points, and it is possible to ensure the placement position accuracy at the time of mounting and to improve the quality by improving the strength of the joint portion against the temperature cycle applied after mounting. An object of the present invention is to provide a semiconductor device that can be improved, a circuit board including the semiconductor device, and an electro-optical device.

In order to achieve the above object, the present invention employs the following configuration.
The semiconductor device of the present invention, an electrode for connecting the terminal and electrically provided on the convex portion of the mounting object, the structure than the electrode protrudes, is formed into a predetermined pattern by the resin, said to be mounted A semiconductor device comprising: a first conductive layer that contacts a target terminal and extends in one direction; and a second conductive layer that contacts the first conductive layer and the electrode and extends in the one direction. The structure is provided with a protruding portion formed extending in the one direction, and a concave portion extending in the one direction between the protruding portions and corresponding to the protruding portion to be mounted. The first conductive layer is provided below the concave portion in a vertical direction away from the structure, and the first conductive layer is provided with one end side in the one direction on the bottom surface of the concave portion using a fluid material. The other end of the direction is provided at a position spaced apart from the recess in the plane direction. The second conductive layer is provided so that one end side in the one direction is in contact with the electrode below the concave portion of the structure body, and the other end side in the one direction is spaced apart from the structure body in a planar direction. A dam that is provided in contact with the first conductive layer and dams the flowable material on one end side in the one direction and the other end side in the one direction on the outside of the first conductive layer. It has the part .

Therefore, in the present invention, since the concave portion corresponding to the convex portion of the mounting target is provided, the relative position between the semiconductor device and the mounting target is determined by using the concave portion of the structure and the convex portion of the mounting target. I can decide. That is, it is possible to ensure the arrangement position accuracy between the semiconductor device and the mounting target.
Further, the relative movement distance between the semiconductor device and the mounting target can be limited by using the concave portion of the structure and the convex portion of the mounting target. Therefore, the shear direction stress acting between the semiconductor device and the mounting target can be limited, and the strength in the shear direction can be improved.
For example, even if a semiconductor device having a different linear expansion coefficient and a mounting target are pasted and a temperature cycle is applied, the shear direction stress acting between the semiconductor device and the mounting target can be limited. The quality can be improved by improving the strength against the cycle.
In the present invention, when the first conductive layer is formed using the fluid material, the flow of the fluid material can be dammed at a predetermined position by the damming portion, so that a short circuit may occur on the active surface. Further, it is possible to prevent the conductive layer from being formed up to unnecessary portions, to form a predetermined conductive layer, and to reduce the unnecessary portion removing process step.

When the damming portion is provided on one end side in the one direction, when the first conductive layer is formed on the bottom surface of the recess , a short circuit occurs in the first conductive layer, or the conductive layer is formed up to an unnecessary portion. Can be prevented. Further, a configuration in which the damming portion provided on the other end side in the one direction surrounds the periphery of the first conductive layer and is connected to the protruding portion may be employed.

The damming portion provided on the other end side in the one direction is preferably formed lower than the bottom surface of the recess .
Thereby, when the mounting target comes into contact with the concave portion of the structure, it is possible to prevent the damming portion from coming into contact with the mounting target and hindering the electrical connection with the mounting target.
Moreover, it is preferable that a damming part is formed with the same resin as a structure.
Thereby, it becomes possible to form a structure and a damming part in the same process, and a manufacturing process can be reduced.
The conductive layer is preferably formed by any one of droplet discharge, printing, and material spraying of a fluid material containing a conductive material (for example, metal fine particles).

Then, as the alignment between the mounted object, the a convex portion of the mounting object, when made by the mating of the recess of the structure, and the conductive layer and the terminal of the target mounting object contacts By doing so, it is preferable that the electrode and the terminal to be mounted are electrically connected .
According to this arrangement, since the gap between the recess of the convex portion and the structure of the mounting object is reduced, it is possible to determine the semiconductor device and the relative position between the mounting object more accurately.
Further, since the relative movement distance between the semiconductor device and the mounting target can be limited to be shorter, the shear direction stress acting between the semiconductor device and the mounting target can be limited to be smaller, and the strength in the shear direction can be reduced. Can be improved.

Moreover, it is desirable that the side surface portion of the concave portion of the structure is a tapered portion having an inclination angle.
According to this configuration, since the tapered portion is provided, when the semiconductor device and the mounting target are attached, the tapered portion serves as a guide to fit the concave portion of the structure and the convex portion of the mounting target. It becomes easy to match.

A circuit board of the present invention is a circuit board having a substrate, wiring formed in a predetermined pattern on the substrate, a convex portion formed on the substrate, and a semiconductor substrate electrically connected to the wiring. The semiconductor substrate is the semiconductor device of the present invention, and the alignment of the substrate and the semiconductor device is performed by fitting the convex portion formed on the substrate and the concave portion of the structure. When performed, the first conductive layer formed in the recess and the wiring formed in the substrate are connected in contact with each other.

That is, in the circuit board of the present invention, since the alignment between the substrate and the semiconductor device is performed by fitting the convex portion formed on the substrate and the concave portion of the structure, the convex portion formed on the substrate The relative position between the semiconductor device and the substrate can be determined using the concave portion of the structure. That is, it is possible to ensure the placement position accuracy between the semiconductor device and the substrate. Also, in the present invention, when the first conductive layer is formed using the fluid material, the flow of the fluid material can be blocked at a predetermined position by the blocking portion, so that a short circuit occurs on the active surface. In addition, the conductive layer can be prevented from being formed up to unnecessary portions, a predetermined conductive layer can be formed, and the unnecessary portion removal process can be reduced.

In order to realize the above configuration, more specifically, the substrate may have flexibility.
According to this configuration, since the substrate is flexible, the substrate can be deformed to match the semiconductor device when determining the relative position between the semiconductor device and the substrate. Therefore, the relative position between the semiconductor device and the mounting target can be determined more accurately.
In addition, since the substrate can follow the deformation of the semiconductor device, the shear direction stress acting between the semiconductor device and the substrate can be further reduced, and the strength in the shear direction can be improved.

More specifically, in order to realize the above configuration, it is desirable that the convex portion formed on the substrate is formed by wiring.
According to this configuration, since the convex portion formed on the substrate is formed by the wiring, the wiring can easily come into contact with the semiconductor device, and conduction with the electrode of the semiconductor device can be more reliably ensured. .

In order to realize the above-described configuration, more specifically, it is desirable that the side surface portion of the convex portion formed on the substrate is a tapered portion having an inclination angle.
According to this configuration, since the tapered portion is provided, when the semiconductor device and the substrate are pasted, the tapered portion serves as a guide to easily fit the concave portion of the structure and the convex portion of the substrate. .

An electro-optical device according to the present invention includes an electro-optical panel and the circuit board according to the present invention electrically connected to the electro-optical panel.
That is, since the electro-optical device of the present invention includes the circuit board of the present invention, the strength against the temperature cycle is improved, and the quality of the electro-optical device can be improved. Further, it is possible to prevent a short circuit from occurring on the active surface or to form a conductive layer up to an unnecessary portion, a predetermined conductive layer can be formed, and the unnecessary portion removing process can be reduced.

Hereinafter, embodiments of a semiconductor device, a circuit board, and an electro-optical device according to the present invention will be described with reference to FIGS.
FIG. 1 is an exploded perspective view of a liquid crystal display device as an electro-optical device according to the present invention.
As shown in FIG. 1, a liquid crystal display device (electro-optical device) 1 according to the present invention includes a color liquid crystal panel (electro-optical panel) 2 and a circuit board 3 connected to the liquid crystal panel 2. Yes. Further, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 2 as necessary.

  The liquid crystal panel 2 has a pair of substrates 5a and 5b bonded by a sealing material 4, and liquid crystal is sealed in a gap formed between these substrates 5b and 5b, so-called cell gap. . These substrates 5a and 5b are generally formed of a light-transmitting material such as glass or synthetic resin. A polarizing plate 6a and a polarizing plate 6b are attached to the outer surfaces of the substrate 5a and the substrate 5b. In FIG. 1, the polarizing plate 6b is not shown.

An electrode 7a is formed on the inner surface of the substrate 5a, and an electrode 7b is formed on the inner surface of the substrate 5b. These electrodes 7a and 7b are formed in stripes or letters, numbers, or other appropriate patterns. The electrodes 7a and 7b are made of a light-transmitting material such as ITO (Indium Tin Oxide).
The substrate 5a has a projecting portion that projects from the substrate 5b, and a plurality of terminals 8 are formed on the projecting portion. These terminals 8 are formed simultaneously with the electrodes 7a when the electrodes 7a are formed on the substrate 5a. Accordingly, these terminals 8 are made of, for example, ITO. These terminals 8 include one that extends integrally from the electrode 7a and one that is connected to the electrode 7b via a conductive material (not shown).

  The actual electrodes 7a and 7b and the terminals 8 are formed on the substrate 5a and the substrate 5b with a very narrow interval, respectively. In FIG. 1, the structure of the liquid crystal panel 2 is easily understood. For this reason, the intervals are schematically shown in an enlarged manner, and only a few of them are illustrated, and other portions are omitted. Also, the connection state between the terminal 8 and the electrode 7a and the connection state between the terminal 8 and the electrode 7b are not shown in FIG.

Further, a semiconductor element (semiconductor device) 100 as a liquid crystal driving IC is mounted on the circuit board 3 at a predetermined position on the wiring board (wiring) 9. The wiring substrate 9 is manufactured by forming a wiring pattern 12 by patterning a metal film such as Cu formed on a flexible base substrate (substrate) 11 such as polyimide.
Note that a large number of actual wiring patterns 12 are formed on the base substrate 11 with an extremely narrow interval. In FIG. 1, in order to facilitate understanding of the structure, the interval is enlarged and schematically illustrated. In addition, the structure is simplified and illustrated. Although not shown, a resistor, a capacitor, and other chip components may be mounted at predetermined positions other than the portion where the semiconductor element 100 is mounted.

FIG. 2 is a cross-sectional view of the base substrate 11.
A mounting structure of a COF (Chip On Film) system is formed by using a flexible substrate as the base substrate 11 and mounting a mounting component thereon. In FIG. 1, the wiring pattern 12 includes an output terminal 12 a formed on one side of the circuit board 3 and an input terminal 12 b formed on the side opposite to the output terminal 12 a. In addition, a portion of the wiring pattern 12 that faces the region for mounting the semiconductor element 100 constitutes a semiconductor terminal (convex portion) 13.
As shown in FIG. 2, the semiconductor terminals 13 are provided on the base substrate 11 so as to protrude by a height a, and the side surfaces thereof are terminal inclined surfaces having inclinations that approach each other in the direction away from the base substrate 11. (Tapered portion) 13a.

3 is a partial plan view of the semiconductor element of the present invention, FIG. 4 is a cross-sectional view taken along line AA in FIG. 3, and FIG. 5 is a cross-sectional view taken along line BB in FIG.
The semiconductor element in the present embodiment may be a semiconductor substrate such as a silicon wafer in which a large number of semiconductor chips are formed, or individual semiconductor chips. In the case of a semiconductor chip, it is generally a rectangular parallelepiped (including a cube), but its shape is not limited and may be spherical.
In the vicinity of the edge of the active surface of the semiconductor element 100, as shown in FIGS. 3 to 5, an Al electrode (electrode) 101 for inputting and outputting an electric signal and a resin formed on the Al electrode 101 are disposed. Conductive layers 103 a and 103 b electrically connected to the structure 102 and the Al electrode 101 are formed. Further, a passivation film 104 that protects the active surface of the semiconductor element 100 is formed on the entire surface.

As shown in FIGS. 3 to 5, each of the Al electrodes 101 has a substantially rectangular shape, and a plurality of Al electrodes 101 are formed in the vicinity of the edge of the semiconductor element 100 at a predetermined pitch. A passivation film 104 is formed on the periphery of the Al electrode 101 so as to cover the semiconductor element 100.
The Al electrode 101 is formed by sputtering, for example, and is formed by patterning into a predetermined shape (for example, rectangular shape) using a resist or the like. In the present embodiment, the case where the electrode is formed of an Al electrode will be described as an example. For example, a Ti (titanium) layer, a TiN (titanium nitride) layer, an AlCu (aluminum / copper) layer, and TiN are used. A structure in which layers (cap layers) are sequentially laminated may be used. Furthermore, the electrode is not limited to the above-described configuration, and may be appropriately changed according to required electrical characteristics, physical characteristics, and chemical characteristics.
Further, the passivation film 104 can be formed of SiO ₂ (silicon oxide), SiN (silicon nitride), polyimide resin, or the like. As the thickness of the passivation film 104, a thickness of about 1 μm can be exemplified.

  The structure 102 is disposed on the conductive layer 103a and the passivation film 104 described later so as to cover a region where the Al electrode 101 is provided. In the structure 102, convex protrusions 105 and concave conductive parts (recesses) 106 are alternately formed at substantially the same pitch as the Al electrodes 101. In addition, a taper portion 107 is formed between the protrusion portion 105 and the conducting portion 106 so as to connect the two with a surface, and a conductive layer 103b (to be described later) is provided at the end of the conducting portion 106 on the edge side of the semiconductor element 100. A surface 108 is formed.

The structure body 102 is formed by etching a resin such as polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or the like. be able to. Photoetching or wet etching is preferable as this etching method, and the tapered portion 107 and the inclined surface 108 can be easily formed. Further, the step amount b between the protruding portion 105 and the conducting portion 106 is managed such that the step amount b is smaller than the height a of the semiconductor terminal 13 by managing the etching time.
Note that etching of the structure body 102 is not limited to photo etching or wet etching, and may be performed by plasma etching. When plasma etching is used, the inclination angle of the taper part 107 becomes substantially vertical, and the pitch between the protrusion part 105 and the conduction part 106 can be further shortened.

  As shown in FIGS. 3 to 5, the conductive layer 103 a is formed on the upper surface of each Al electrode 101 so as to be electrically connected to the Al electrode 101. The shape of the conductive layer 103 a is a substantially rectangular shape that covers the Al electrode 101, and one end on the long axis side (the edge side of the semiconductor element 1 in the present embodiment) extends to the passivation film 104. Is formed. Note that the direction in which the conductive layer 103a extends to the top of the passivation film 104 may extend not only in the direction of this embodiment but also in the opposite direction (the center side of the semiconductor element 100).

Further, the conductive layer 103b is formed from the surface of the conductive portion 106 to the surface of the conductive layer 103a through the inclined surface 108. The shape of the conductive layer 103b is formed in a substantially rectangular shape like the conductive layer 103a. The conductive layer 103b may be formed not only on the surface of the conductive portion 106 but also on the tapered portions 107 on both sides thereof. At this time, the contact area between the conductive layer 103b and the semiconductor terminal 13 is increased, and the conductivity can be more reliably ensured.
These conductive layers 103a, 103b, the liquid containing Au, TiW, Cu, Cr, Ni, Ti, W, NiV, metal such as Al, or a conductive fine particles such as the above Symbol metal particles some of these metals A body material (fluid material) can be applied and formed by a droplet discharge method, printing, a material spraying method, or the like.
In this embodiment mode, the conductive layer 103b is formed by a droplet discharge method.
The conductive layers 103a and 103b are preferably formed of a material having higher corrosion resistance than the Al electrode 2, such as Cu, TiW, or Cr. Thereby, it becomes possible to prevent corrosion of the Al electrode 101 and to prevent the occurrence of electrical failure.
In addition, in any case, it is preferable from the viewpoint of global environmental protection that the material for forming the conductive layers 103a and 103b is lead (Pb) free.

When the conductive layer 103b is formed by a droplet discharge method, particularly when the conductive layer is formed on an inclined surface or in the vicinity thereof, the applied liquid material may not stay in a predetermined position due to its fluidity. For this reason, in the present embodiment, a damming portion is provided in order to dam the flow of the liquid material and keep it in a predetermined position.
Specifically, as shown in FIG. 4, a damming portion 111 protruding from the conducting portion 106 of the structure 102 is formed on one end side in the length direction of the conductive layer 103b (left and right direction in FIG. 4). A damming portion 112 protrudes from the other end side of the semiconductor element 100 that is separated from the structure 102. The damming portion 111 is set at a height lower than that of the protruding portion 105 and is formed at a position where it does not interfere with the semiconductor terminal 13 of the base substrate 11. The height of the blocking portion 112 is set to less than or equal to the height of the conduction portion 106, it does not interfere with the semiconductor terminal 13 even when the semiconductor terminal 13 of the base substrate 11 is connected to the conductive layer 103b of the conductive portion 106 It has a configuration. Further, as shown in FIG. 3, the damming portion 112 surrounds the periphery of the conductive layer 103b and is connected to the protruding portion 105 (the inclined surface) of the structure 102, and also in the width direction of the conductive layer 103b. It is configured to block the flow of the water.
These damming portions 111 and 112 are formed of the same resin material as that of the structure body 102 in the same manufacturing process (etching process) as that of the structure body 102.

Next, a liquid material (wiring pattern ink) used when forming the conductive layer 103b by a droplet discharge method will be described.
The liquid material discharged in the form of droplets by the droplet discharge method is generally composed of a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium (medium) as a film forming component.
In the present embodiment, as the conductive fine particles, in addition to the metal fine particles described above, these oxides, fine particles of conductive polymers and superconductors, and the like are used.
These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility.
The particle diameter of the conductive fine particles is preferably 1 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, there is a possibility that clogging may occur in the nozzle of the liquid discharge head described later. On the other hand, if it is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility and dispersion stability, and ease of application to the droplet discharge method (inkjet method). More preferred dispersion media include water and hydrocarbon compounds.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When the liquid is discharged by the droplet discharge method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition with respect to the nozzle surface increases, and thus flight bending easily occurs, resulting in 0.07 N / m. If it exceeds the upper limit, the shape of the meniscus at the nozzle tip is unstable, and it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities in the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When the liquid material is ejected as droplets using the droplet ejection method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of ink, and if the viscosity is greater than 50 mPa · s, The frequency of clogging in the nozzle holes increases, and it becomes difficult to smoothly discharge droplets.

Here, examples of the discharge technique of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material by a charging electrode, and the flight direction of the material is controlled by a deflection electrode and discharged from a nozzle.
In addition, the pressurized vibration method is a method in which an ultra-high pressure of about 30 kg / cm ² is applied to the material and the material is discharged to the nozzle tip side. When no control voltage is applied, the material goes straight and is discharged from the nozzle. When a control voltage is applied, electrostatic repulsion occurs between the materials, and the materials are scattered and are not discharged from the nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the nozzle.

  In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied in a space in which the material is stored, a meniscus of the material is formed on the nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable. The droplet discharge method has an advantage that the use of the material is less wasteful and a desired amount of the material can be accurately disposed at a desired position. The amount of one drop of the liquid material (fluid) discharged by the droplet discharge method is, for example, 1 to 300 nanograms.

Next, a device manufacturing apparatus used when manufacturing the conductive layer 103b will be described.
As this device manufacturing apparatus, a droplet discharge apparatus (inkjet apparatus) that manufactures a device by discharging droplets from a droplet discharge head onto a substrate is used.
FIG. 6 is a perspective view showing a schematic configuration of the droplet discharge device IJ.
The droplet discharge device IJ includes a droplet discharge head H, an X-axis direction drive shaft 204, a Y-axis direction guide shaft 205, a control device CONT, a stage 207, a cleaning mechanism 208, a base 209, and a heater. 215.
The stage 207 supports the substrate P on which ink (liquid material) is provided by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P at a reference position.

  The droplet discharge head H is a multi-nozzle type droplet discharge head having a plurality of discharge nozzles, and the longitudinal direction and the Y-axis direction are matched. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head H at regular intervals along the Y-axis direction. From the discharge nozzle of the droplet discharge head H, the ink containing the conductive fine particles described above is discharged onto the substrate P supported by the stage 207.

An X-axis direction drive motor 202 is connected to the X-axis direction drive shaft 204. The X-axis direction drive motor 202 is a stepping motor or the like, and rotates the X-axis direction drive shaft 204 when an X-axis direction drive signal is supplied from the control device CONT. When the X-axis direction drive shaft 204 rotates, the droplet discharge head H moves in the X-axis direction.
The Y-axis direction guide shaft 205 is fixed so as not to move with respect to the base 209. The stage 207 includes a Y-axis direction drive motor 203. The Y-axis direction drive motor 203 is a stepping motor or the like, and moves the stage 207 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

The control device CONT supplies a droplet discharge control voltage to the droplet discharge head H. Further, a drive pulse signal for controlling movement of the droplet discharge head H in the X-axis direction is supplied to the X-axis direction drive motor 202, and a drive pulse signal for controlling movement of the stage 207 in the Y-axis direction is supplied to the Y-axis direction drive motor 203. Supply.
The cleaning mechanism 208 cleans the droplet discharge head H. The cleaning mechanism 208 is provided with a Y-axis direction drive motor (not shown). By driving the Y-axis direction drive motor, the cleaning mechanism 208 moves along the Y-axis direction guide shaft 205. The movement of the cleaning mechanism 208 is also controlled by the control device CONT.
Here, the heater 215 is a means for heat-treating the substrate P by lamp annealing, and performs evaporation and drying of the solvent contained in the liquid material applied on the substrate P. The heater 215 is also turned on and off by the control device CONT.

  The droplet discharge device IJ discharges droplets onto the substrate P while relatively scanning the droplet discharge head H and the stage 207 that supports the substrate P. Here, in the following description, the X-axis direction is a scanning direction, and the Y-axis direction orthogonal to the X-axis direction is a non-scanning direction. Accordingly, the discharge nozzles of the droplet discharge head H are provided side by side at regular intervals in the Y-axis direction, which is the non-scanning direction. In FIG. 6, the droplet discharge head H is disposed at right angles to the traveling direction of the substrate P, but the angle of the droplet discharging head H is adjusted so as to intersect the traveling direction of the substrate P. It may be. In this way, by adjusting the angle of the droplet discharge head H, the pitch between the nozzles can be adjusted. Further, the distance between the substrate P and the nozzle surface may be arbitrarily adjusted.

FIG. 7 is a view for explaining the discharge principle of the liquid material by the piezo method.
In FIG. 7, a piezo element 22 is installed adjacent to a liquid chamber 21 that stores a liquid material (wiring pattern ink, functional liquid). The liquid material is supplied to the liquid chamber 21 via a liquid material supply system 23 including a material tank that stores the liquid material. The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 through the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and the liquid material is discharged from the nozzle 25. Material is dispensed. In this case, the amount of distortion of the piezo element 22 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

When the conductive layer 103b is formed using the droplet discharge method by the droplet discharge apparatus IJ, as shown in FIG. 7, the semiconductor element 100 (substrate P) on which the structure body 102 is formed and A liquid material containing a conductive layer forming material is discharged as a droplet 32 from the liquid discharge head H while moving relative to the droplet discharge head H, and the droplet 32 is disposed at a predetermined position on the substrate P. Specifically, a plurality of droplets 32 are discharged at a predetermined pitch while relatively moving the droplet discharge head 1 and the substrate P along the direction in which the conductive layer 103b is formed (the left-right direction in FIG. 7). Thus, the linear conductive layer 103b is formed.
At this time, since the damming portions 111 and 112 are formed at the end portion of the region where the conductive layer 103b is to be formed, the liquid material flows to cause a short circuit on the active surface or to conduct to the unnecessary portion. Formation of a layer can be prevented. The same applies to the width direction of the conductive layer 103b.

Thereafter, a heat treatment / light treatment step is performed to remove the dispersion medium or coating agent contained in the droplets disposed on the substrate P. That is, in the liquid material for forming the conductive layer disposed on the substrate P, it is necessary to completely remove the dispersion medium in order to improve electrical contact between the fine particles. Further, when a coating agent such as an organic substance is coated on the surface of the conductive fine particles in order to improve dispersibility, it is also necessary to remove this coating agent. The heat treatment and / or light treatment is usually performed in the air, but may be performed in an inert gas atmosphere such as nitrogen, argon, or helium as necessary. The treatment temperature of the heat treatment and / or the light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as the dispersibility and oxidation of the fine particles, the presence and amount of the coating agent, It is determined appropriately in consideration of the heat resistant temperature.
For example, in order to remove the coating agent made of organic matter, it is necessary to bake at about 300 ° C.

The heat treatment and / or light treatment may be performed using lamp annealing in addition to general heat treatment using a heating means such as a hot plate or an electric furnace. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used. These light sources generally have a power output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.
By the heat treatment and / or light treatment, electrical contact between the fine particles is ensured and converted into a conductive film as shown in FIG. 4, and the conductive layer 103a passes from the surface of the conductive portion 106 of the structure 102 through the inclined surface 108. A conductive layer 103b is formed over the surface.

Next, the joining of the semiconductor element 100 having the above configuration and the circuit board 3 will be described.
FIGS. 8A and 8B are diagrams showing a bonding process between a semiconductor element and a wiring board.
First, as shown in FIG. 8A, the wiring substrate 9 is placed on the stage 150, the semiconductor element 100 is placed at the mounting position, and the tool 151 is placed above the semiconductor element 100. Here, the temperature of the stage 150 can be set in the range of about several tens to one hundred and several tens of degrees Celsius, and the tool 151 can set the temperature to several hundred degrees Celsius.

FIG. 9 is a cross-sectional view of the junction between the semiconductor element and the wiring board.
The stage 150, the wiring substrate 9, the semiconductor element 100, and the tool 151 are arranged as shown in FIG. 8A, and the tool 151 is moved in the direction of the stage 150 with the temperature of the stage 150 and the tool 151 set. The semiconductor element 100 is heated and pressurized.
Then, as shown in FIG. 9, the taper portion 107 of the semiconductor element 100 and the terminal inclined surface 13 a of the wiring substrate 9 come into contact with each other while being guided by the inclined surfaces, and the conductive layer 103 b and the semiconductor terminal 13 are connected. Abut.
When the semiconductor element 100 and the wiring pattern 12 come into contact with each other, as shown in FIG. 8B, a sealing resin 152 is poured between the semiconductor element 100 and the base substrate 11 by using a capillary phenomenon to solidify. Let
The semiconductor element 100 is mounted on the wiring board 9 by the above process. Alternatively, the semiconductor element 100 may be mounted by applying ACP (Anisotropic Conductive Paste) or NCP (Non Conductive Paste) as the sealing resin and applying them to the wiring substrate 9 in advance. Further, ultrasonic bonding that bonds the semiconductor element 100 or the wiring substrate 9 while vibrating may be used.
In this example, the semiconductor element 100 is arranged on the upper side and the circuit board 3 is arranged on the lower side to be bonded. However, the semiconductor element 100 is arranged on the lower side and the circuit board 3 is arranged on the upper side. It can also be joined.

According to the above configuration, the alignment between the wiring substrate 9 and the semiconductor element 100 is performed by fitting the semiconductor terminal 13 formed on the wiring substrate 9 with the protruding portion 105 and the conducting portion 106 of the structure 102. It has been broken. Therefore, the relative position between the semiconductor element 100 and the wiring board 9 can be easily determined, and the arrangement position accuracy between the semiconductor element 100 and the wiring board 9 can be easily ensured.
In addition, the relative movement distance between the semiconductor element 100 and the wiring substrate 9 can be limited by using the semiconductor terminal 13, the protrusion 105 and the conduction portion 106 of the structure 102. Therefore, even if a temperature cycle is applied after connecting the semiconductor element 100 and the wiring board 9 having different linear expansion coefficients, it is possible to limit the shear direction stress acting on the connection portion between the semiconductor element 100 and the wiring board 9. . As a result, the conduction between the semiconductor element 100 and the wiring substrate 9 can be prevented from being cut off, and the quality of the liquid crystal display device 1 can be improved.

Further, since the tapered portion 107 of the structure 102 and the terminal inclined surface 13a of the semiconductor terminal 13 are provided, the tapered portion 107 and the terminal inclined surface 13a are joined when the semiconductor element 100 and the wiring substrate 9 are joined. As a guide, the semiconductor terminal 13 can be easily fitted into the protruding portion 105 and the conducting portion 106 of the structure 102.
Further, the base substrate 11 is stretched by the tapered portion 107 and the terminal inclined surface 13a, and the pitch between the conductive layer 103b and the semiconductor terminal 13 can be matched. Therefore, the upper limit of the temperature applied from the stage 150 to the base substrate 11 can be lowered as compared with the case where the pitch is adjusted only by the thermal expansion of the base substrate 11.
In addition, since the step size dimension b between the protrusion 105 and the conducting part 106 is smaller than the height dimension a of the semiconductor terminal 13, the tip of the semiconductor terminal 13 is securely attached to the conductive layer 103 b formed in the conducting part 106. It can be made to contact, and conductivity can be secured more reliably.

Since the base substrate 11 is flexible, the base substrate 11 can be deformed to match the semiconductor element 100 when determining the relative position between the semiconductor element 100 and the wiring substrate 9. Therefore, the relative position between the semiconductor element 100 and the wiring board 9 can be determined more accurately.
In addition, since the base substrate 11 can follow the deformation of the semiconductor element 100, the stress in the shear direction acting between the semiconductor element 100 and the wiring board 9 can be further reduced, and the strength of the joint in the shear direction can be increased. Can be improved.

  Further, in this embodiment, since the flow of the liquid material for forming the conductive layer is blocked by the damming portions 111 and 112, the liquid material flows to cause a short circuit on the active surface, or an unnecessary portion. It is possible to prevent the conductive layer from being formed. As a result, a conductive layer having a predetermined shape and length can be formed to improve the formation accuracy of the conductive layer, and the unnecessary portion removal process can be reduced, thereby contributing to improvement in productivity. Further, in the present embodiment, the height of the damming portion 112 is made lower than that of the conducting portion 106, thereby preventing the bonding between the wiring board 9 and the semiconductor element 100 from being hindered.

FIG. 10 is an exploded perspective view showing an example of a COG type liquid crystal display device according to the present invention.
In addition to the COF mounting, the present invention also includes a COG (Chip On Glass) type electro-optical device in which a driver IC or the like is directly mounted on a display panel (liquid crystal panel), and a COB (Chip On Board) type electric optical device. It can also be applied to an optical device.
As shown in FIG. 10, a liquid crystal display device (electro-optical device) 50 as an electro-optical device includes a frame-shaped shield case 68 made of a metal plate, a liquid crystal panel (electro-optical panel) 52 as an electro-optical panel, An ACF (not shown) for electrically connecting the liquid crystal driving LSI 58 and the liquid crystal panel 52 and a structure (not shown) formed on the active surface of the liquid crystal driving LSI (semiconductor device) 58 to each other by the COG mounting method. (Anisotropic Conductive Film: anisotropic conductive film) and a holding member 172 for maintaining the overall strength.

  The liquid crystal panel 52 includes a first substrate 53 made of soda glass having a thickness of 0.7 mm provided with a first transparent electrode layer on one surface, and a thickness of 0.7 mm provided with a second transparent electrode layer on one surface. The second substrate 54 made of soda glass is bonded so that the first transparent electrode layer and the second transparent electrode layer are opposed to each other, and a liquid crystal composition is sealed between these substrates. . Then, the liquid crystal driving LSI 58 is directly electrically connected to the one substrate 54 using the COG ACF. Thus, the COG type liquid crystal panel 52 is formed. The liquid crystal driving LSI 58 is manufactured by the method for manufacturing a semiconductor device.

FIG. 11 is a cross-sectional view of an organic EL panel provided in an organic EL display device as an electro-optical device according to the present invention.
In addition to the liquid crystal display device, an organic EL display device can be used as the electro-optical device. As shown in FIG. 11, the organic EL panel (electro-optical panel) 30 is formed by forming TFTs (Thin Film Transistors) 32 in a matrix on a substrate 31 and further forming a plurality of stacked bodies 33 thereon. It is configured. The TFT 32 is formed with a source electrode, a gate electrode, and a drain electrode, and the gate electrode and the source electrode are electrically connected to, for example, one of the conductive layers 103b shown in FIG. The laminate 33 includes an anode layer 34, a hole injection layer 35, a light emitting layer 36, and a cathode layer 37. The anode layer 34 is connected to the drain electrode of the TFT 32, and current is supplied to the anode layer 34 via the source electrode and the drain electrode of the TFT 32 when the TFT 32 is in the ON state.

  In the organic EL panel 30 configured as described above, holes injected from the anode layer 34 into the light emitting layer 36 through the hole injection layer 35 and electrons injected from the cathode layer 37 into the light emitting layer 36 are generated. Light generated by recombination in the light emitting layer 36 is emitted from the substrate 31 side.

  Although the semiconductor device manufacturing method, the circuit board, and the electro-optical device according to the embodiment of the present invention have been described above, an electronic apparatus in which the electro-optical device of the present embodiment is mounted will be described. By incorporating electronic components such as a liquid crystal display device as an electro-optical device described above, a motherboard including a CPU (Central Processing Unit), a keyboard, and a hard disk into the housing, for example, a notebook personal computer 60 shown in FIG. Is manufactured.

FIG. 12 is an external view showing a notebook computer as an electronic apparatus according to an embodiment of the present invention. FIG. 13 is a perspective view showing a liquid crystal display device (electro-optical device) as another electronic apparatus.
In FIG. 12, 61 is a housing, 62 is a liquid crystal display device (electro-optical device), and 63 is a keyboard. Note that FIG. 12 shows a notebook computer provided with a liquid crystal display device, but an organic EL display device may be provided instead of the liquid crystal display device.
A cellular phone 70 shown in FIG. 13 includes an antenna 71, a receiver 72, a transmitter 73, a liquid crystal display device 74, an operation button unit 75, and the like. Further, the mobile phone shown in FIG. 13 may have a configuration including an organic EL display device instead of the liquid crystal display device 74.

  In the above-described embodiment, a notebook computer and a mobile phone have been described as examples of electronic devices. However, the present invention is not limited to these, and a liquid crystal projector, a multimedia-compatible personal computer (PC), and an engineering workstation (EWS). It can be applied to electronic devices such as pagers, word processors, televisions, viewfinder type or monitor direct-view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation devices, POS terminals, and devices equipped with touch panels. .

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment, recess is formed (conductive portion 106) in the semiconductor device 100, has been described to adapt to the configuration in which the convex portions (the semiconductor terminal 13) is formed on the wiring substrate 9 side The present invention is not limited to this configuration, and can be applied to various other configurations such as a configuration in which a convex portion is formed on the semiconductor element 100 side and a concave portion is formed on the wiring substrate 9 side.

  In the above embodiment, the conductive layer 103b is described as being formed by a droplet discharge method. However, the present invention is not limited to this, and the conductive layer 103b may be formed by a printing method or a material spraying method. Further, not only the conductive layer 103b but also the conductive layer 103a may be formed by a droplet discharge method, a printing method, or a material spraying method.

1 is an exploded perspective view of a liquid crystal display device according to the present invention. It is sectional drawing of a base substrate. It is a fragmentary top view of the semiconductor element of this invention. FIG. 4 is a cross-sectional view taken along line AA in FIG. 3. FIG. 4 is a cross-sectional view taken along line BB in FIG. 3. It is a schematic perspective view of a droplet discharge device. It is a figure for demonstrating the discharge principle of the liquid material by a piezo method. It is a joining process figure of a semiconductor element and a wiring board. It is a junction sectional view of a semiconductor element and a wiring board. It is a disassembled perspective view which shows an example of the COG type liquid crystal display device by this invention. It is sectional drawing of the organic electroluminescent panel of the organic electroluminescent display apparatus by this invention. 1 is an external view showing a notebook computer according to an embodiment of the present invention. It is a perspective view which shows the liquid crystal display device as another electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 50, 62 ... Liquid crystal display device (electro-optical device), 2, 52 ... Liquid crystal panel (electro-optical panel), 3 ... Circuit board, 9 ... Wiring board (wiring), 11 ... Base board (board | substrate), 13 ... Semiconductor terminal (convex part), 13a ... Terminal inclined surface (tapered part), 30 ... Organic EL panel (electro-optical panel), 58 ... Liquid crystal driving LSI (semiconductor device), 100 ... Semiconductor element (semiconductor device), 101 ... Al electrode (electrode), 102 ... Structure, 103a, 103b ... Conductive layer, 106 ... Conducting part (concave part), 107 ... Tapered part, 111,112 ... Dampening part

Claims (12)

An electrode electrically connected to a terminal provided on the convex portion to be mounted;
A structure that protrudes from the electrode and is formed into a predetermined pattern with a resin;
A first conductive layer extending in one direction in contact with the of the mounting object terminal,
A second conductive layer in contact with the first conductive layer and the electrode and extending in the one direction;
A semiconductor device comprising:
The structure is provided with a protrusion formed to extend in the one direction, and a recess corresponding to the protrusion to be mounted that extends in the one direction between the protrusions.
The electrode is provided below the recess and spaced apart from the structure in the vertical direction,
The first conductive layer is made of a flowable material, and one end side in the one direction is provided on the bottom surface of the recess, and the other end side in the one direction is provided at a position spaced apart from the recess in the plane direction.
The second conductive layer is provided so that one end side in the one direction is in contact with the electrode below the concave portion of the structure body, and the other end side in the one direction is spaced apart from the structure body in a planar direction. And provided in contact with the first conductive layer,
A semiconductor device comprising a blocking portion for blocking the flowable material on one end side in the one direction and the other end side in the one direction outside the first conductive layer . The semiconductor device according to claim 1,
The damming portion provided on the other end side in the one direction surrounds the periphery of the first conductive layer and is connected to the protruding portion . The semiconductor device according to claim 2 ,
The damming portion provided on the other end in the one direction is formed lower than the bottom surface of the recess. The semiconductor device according to any one of claims 1 to 3,
The damming portion is formed of the resin. The semiconductor device according to any one of claims 1 to 4,
The semiconductor device according to claim 1, wherein the first conductive layer is formed by one of droplet discharge, printing, and material spraying of the fluid material. The semiconductor device according to any one of claims 1 to 5,
When the alignment with the mounting target is performed by fitting the convex portion of the mounting target with the concave portion of the structure, the first conductive layer and the terminal of the mounting target are The semiconductor device is characterized in that the electrode and the terminal to be mounted are electrically connected by contact. The semiconductor device according to any one of claims 1 to 6,
The semiconductor device according to claim 1, wherein a side surface portion of the concave portion of the structure is a tapered portion having an inclination angle. A circuit board having a substrate, wiring formed in a predetermined pattern on the substrate, a convex portion formed on the substrate, and a semiconductor substrate electrically connected to the wiring;
The semiconductor substrate is a semiconductor device according to any one of claims 1 to 7 ,
The first conductive layer formed in the recess when the alignment between the substrate and the semiconductor device is performed by fitting the protrusion formed on the substrate and the recess of the structure. And a wiring formed on the substrate in contact with each other and connected. The circuit board according to claim 8 ,
A circuit board, wherein the board has flexibility. The circuit board according to claim 8 or 9 ,
The circuit board, wherein the wiring formed on the substrate forms a projection to be mounted. The circuit board according to any one of claims 8 to 10 ,
The circuit board according to claim 1, wherein a side surface portion of the convex portion formed on the substrate is a tapered portion having an inclination angle. An electro-optical device comprising: an electro-optical panel; and the circuit board according to claim 8 electrically connected to the electro-optical panel.

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