JP4007068B2 - Micro thermal expansion temperature sensor using thermal expansion material - Google Patents
Micro thermal expansion temperature sensor using thermal expansion material Download PDFInfo
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Description
【０００１】
【発明の属する技術分野】
本発明は熱膨張材料を用いたマイクロ熱膨張温度センサに関し、特に、光熱変換分光法によって、光の回析限界以下の極微小部位の温度計測のために用いるのに適切な熱膨張材料を用いたマイクロ熱膨張温度センサに関する。
【０００２】
【従来の技術】
従来の顕微（紫外・可視・近赤外・赤外）分光法では、光の回折限界よりも小さな領域、または物質を測定観測することは原理的に非常に困難である。しかしながら回折限界の影響を回避する方法を適用することにより、この限界よりも小さな領域を測定することは可能である。
【０００３】
近年、このように光の回折限界よりも小さな領域を測定することを可能とする新しい分光測定法が注目されるようになっている。１つは近接場光を利用した方法であり、もう１つは光熱変換分光法である。これらの方法ではいずれも光の回折限界の影響を受けず（あるいは無視できる条件下で）測定を行うものである。後者の光熱変換分光法を利用した方法では、光の照射に伴う熱膨張変化を捕らえて、分光測定を行う試みがすでに検討されている（Ｍ．Ｓ．Ａｎｄｅｒｓｏｎ、Ａｐｐｌｉｅｄ Ｓｐｅｃｔｒｏｓｃｏｐｙ，５４，３４９，２０００）。
【０００４】
この方法では、光の照射に伴う発熱による熱膨張をＡＦＭ（Ａｔｏｍｉｃ Ｆｏｒｃｅ Ｍｉｃｒｏｓｃｏｐｙ）におけるカンチレバーの変位量の変化をとらえて計測する方法である。しかしながら、通常観測する有機・高分子材料の熱膨張係数（線膨張率又は体膨張率。本明細書において同じ。）は大きいとはいえず、当然ながら測定感度が極めて不足している。
【０００５】
【発明が解決しようとする課題】
そこで、本発明は、高感度な熱膨張温度センサとなりうる抵抗温度係数の大きな素材である熱膨張材料を用いたマイクロ熱膨張温度センサを提供することを課題とする。
【０００６】
【課題を解決するための手段】
上記課題を解決する本発明は、下記構成を有する。
１．［特許請求の範囲］
［請求項１］支持基体の先端部に、熱膨張係数の大きな材料から成る熱膨張温度センサ層を設けたマイクロ熱膨張温度センサを用い、微小部位の温度計測を行うマイクロ熱膨張温度センサであって、前記支持基体と前記熱膨張温度センサ層との間には、熱伝導制御層が設けてあり、かつ該熱膨張温度センサ層の試料接触側は、高熱伝導絶縁層によって被覆されているマイクロ熱膨張温度センサにおいて、前記熱伝導制御層が、支持基体側に位置する高熱伝導絶縁層と、熱膨張温度センサ側に位置する低熱伝導絶縁層とを有しており、且つ前記高熱伝導絶縁層が、熱伝導率１００Ｗ／ｍＫ以上で熱膨張係数１０×１０ −６ ／Ｋ以下の絶縁材料から成り、前記低熱伝導絶縁層が熱伝導率１０Ｗ／ｍＫ未満で熱膨張係数１０×１０ −６ ／Ｋ以下の絶縁材料から成ることを特徴とする熱膨張材料を用いたマイクロ熱膨張温度センサ。
【０００９】
２．熱膨張温度センサ層が、熱膨張係数２５×１０−６／Ｋ以上であることを特徴とする前記１に記載の熱膨張材料を用いたマイクロ熱膨張温度センサ。
【００１１】
３．支持基体がＡＦＭカンチレバーなどのマイクロ変位センサ基体であり、光の照射に伴う熱膨張変化を捕らえて分光測定を行う光熱変換分光法によって、光の回析限界以下の極微小部位の温度計測が可能であることを特徴とする前記１又は２に記載の熱膨張材料を用いたマイクロ熱膨張温度センサ。
【００１２】
４．分光測定以外の目的で微小部位の温度計測が可能であることを特徴とする前記１〜３のいずれかに記載の熱膨張材料を用いたマイクロ熱膨張温度センサ。
【００１３】
【発明の実施の形態】
以下、本発明について詳述する。
本発明の支持基体は、ＡＦＭカンチレバー等のマイクロ変位センサ基体であり、これを形成する材料としては、セラミック、圧電材料、シリコンなどの半導体材料または絶縁材料が挙げられ、支持基体の先端部の形状は台形型、針状、半球状などのいずれであってもよい。
【００１４】
本発明の熱膨張温度センサ層を形成する熱膨張係数の大きな感熱抵抗材料としては、Ｇａ，Ｐ，Ｔｌ，Ｚｎ，Ｒｂ，銀塩化合物（ＡｇＣｌ，ＡｇＢｒ，ＡｇＮＯ３など）、ハロゲン系化合物（ＢｅＣｌ２，ＣｄＣｌ２，ＣｕＣｌ２，Ｈｇ２Ｃｌ２，ＫＣｌ，ＭｇＣｌ２，ＮａＣｌ，ＲｂＣｌ，ＳｎＣｌ２，ＺｎＣｌ２）、ＫＮＯ３，ＫＣｌＯ３，ＫＭｎＯ４、Ａｌ合金、Ｍｇ合金など熱膨張係数が２５×１０−６／Ｋ以上の化合物群であるが、２５×１０−６／Ｋ以上の熱膨張係数を有するその他の熱膨張材料でもよい。カーボンナノチューブ材料等に上記熱膨張材料を封じ込めたものでもよい。
【００１５】
熱膨張温度センサとしての時定数を向上させるには、上記材料をｎｍオーダーに薄膜化して熱膨張温度センサ層とすることに加え、該支持基体と該熱膨張温度センサ層との間に、適度な熱伝導度を有すると共に熱膨張の小さい熱伝導制御層を設けることで達成できる。
【００１６】
微小領域の温度を計測する場合、光の照射により発生した熱を効率よく熱膨張温度センサに伝達できることが肝要である。しかしながら熱膨張する物質によるセンサでは、熱伝導率を単純に高くとれば良いわけではなく、たとえば熱伝導率の高い銅などの金属を基体などに利用すると、熱の伝導度は高くなるが、逆に熱膨張温度センサ層が十分熱膨張しないうちに素早く熱が拡散してしまい温度変化の検出感度が逆に低下してしまう。したがって試料に接する部分、および／または熱膨張温度センサを設ける支持基体には目的（温度、時定数、試料の種類）に応じた最適な熱伝導度を有する材料を複数層配することが好ましい。
【００１７】
本発明において、熱伝導制御層は、支持基体側に位置する高熱伝導絶縁層と、熱膨張温度センサ側に位置する低熱伝導絶縁層とから成る。また、上記試料に接する部分には高熱伝導絶縁層を設ける。
【００１８】
本発明の高熱伝導絶縁層に用いる熱伝導度の高い（且つ熱膨張の小さい絶縁または導電性）材料としては、絶縁材料−ベリリヤ磁器（ＢｅＯ〉、Ａ１Ｎ、ＳｉＣ、アルミナ単結晶、多結晶（サファイア、ルビー）、ＭｇＯ、ＴｉＯ２（ルチル）、ＴｈＯ２（熱伝導率：１０Ｗ／ｍＫ以上）等が挙げられ、これらの材料のなかでは熱伝導率が１００Ｗ／ｍＫ以上で、熱膨張係数が５×１０−６／Ｋ以下であるＡｌＮ（商品名デンカＡＮプレート），ＳｉＣなどがさらに好ましい。これらを用いて、熱伝導制御層を構成する高熱伝導絶縁層と、熱膨張温度センサ層を被覆する高熱伝導絶縁層とを形成する。この２つの高熱伝導絶縁層には、同一の材料を用いてもよいし、異なる材料を用いてもよい。
【００１９】
本発明の低熱伝導絶縁層に用いる熱伝導度の低い且つ熱膨張の小さい絶縁材料としては、石英ガラス、ガラ［商品名：パイレックス（登録商標）］、ホウ素ガラス、雲母など（熱伝導率０．５〜５Ｗ／ｍＫ）等が挙げられる。
【００２０】
本発明は、高熱伝導絶縁層が、熱伝導率１００Ｗ／ｍＫ以上で熱膨張係数１０×１０−６／Ｋ以下、さらに好ましくは５×１０−６／Ｋ以下の絶縁材料から成り、低熱伝導絶縁層が熱伝導率１０Ｗ／ｍＫ未満で熱膨張係数１０×１０−６／Ｋ以下、さらに好ましくは５×１０−６／Ｋ以下の絶縁材料から成る。そして、この範囲を逸脱すると本発明の効果が得られなくなる。
【００２１】
請求項２に示す本発明は、熱膨張温度センサ層が、熱膨張係数２５×１０−６／Ｋ以上である。そして、熱膨張係数が上記範囲未満であると、温度変化に伴う体積膨張率が低下し、温度変化を高感度に検出することが困難となる不都合がある。
【００２３】
本発明に係る熱膨張温度センサによれば、高感度に光の照射に伴う温度変化を高感度に検出可能である。
【００２４】
本発明に係るマイクロ熱膨張温度センサは、分光測定以外の目的で微小部位の温度計測に利用することもできる。
【００２５】
【実施例】
本発明の一実施態様では、図１に示すように、光の回折限界以下に先細りさせた（＜１．０μｍφ）半導体材料または絶縁体材料から成る支持基体１の先端部に、熱膨張が小さく熱伝導度を制御する熱伝導制御層２を設ける。この熱伝導制御層は、高熱伝導絶縁層２Ａと低熱伝導絶縁層２Ｂとの２層以上から成る。この上に、熱膨張温度センサ層３を設け、この上の試料が直接接触する部分には、熱膨張が小さく熱伝導度の高い高熱伝導絶縁層４を設ける。
【００２６】
具体的には、熱膨張温度センサ層３を挟んで支持基体１側には適度な熱伝導度を有し、熱を適切に保持する高熱伝導絶縁層２Ａを１層以上を設ける。本発明の一実施態様では、熱膨張が小さく熱伝導度の高い絶縁材料であるベリリヤ磁器（酸化ベリリウム）、アルミナ単結晶などによって高熱伝導絶縁層２Ａを設ける。そして、この層２Ａの上に、熱膨張が小さく熱伝導度の低いガラス材料等から成る低熱伝導絶縁層２Ｂを設ける。
【００２７】
一方、熱膨張温度センサ層３の上部（試料と直接接する部分）には熱膨張温度センサ層３を保護することと、効率よく試料からの熱を伝えることを目的とする熱膨張が小さく熱伝導度の高い絶縁材料（本発明の一実施態様では、ベリリヤ磁器（酸化ベリリウム）、アルミナ単結晶などによる。）から成る高熱伝導絶縁層４を設ける。
【００２８】
本発明において、高熱伝導絶縁層２Ａ、低熱伝導絶縁層２Ｂ、熱膨張温度センサ層３、高熱伝導絶縁層４の各薄膜層の作製は、抵抗加熱蒸着法、電子ビーム蒸着法、化学的気相堆積法、大気圧プラズマ法など公知の技術および装置を利用することができる。
【００２９】
上記各薄膜層（被膜）２Ａ，２Ｂ、３、４の製造には材料をそのまま蒸発源とする製膜法と、蒸着用材料を蒸発源として真空中に酸素ガスを導入しながら製膜する反応蒸着法があり、いずれの方法でも製膜可能である。
【００３０】
製膜装置としては、一般的に知られている抵抗加熱蒸着法、電子ビーム蒸着法、化学的気相堆積法、スパッタリング法などに用いられるものであれば、公知のものを特別の制限なく用いることができる。
【００３１】
尚、上記化学的気相堆積法（ＣＶＤ＝Ｃｈｅｍｉｃａｌ Ｖａｐｅｒ Ｄｅｐｉｓｉｔｉｏｎ）とは、真空槽内に気体（酸素、窒素、弗素、塩素、反応性特殊ガスなど）を導入し、この気体に高圧電場をかけプラズマ化して、加熱ボートから蒸発した材料蒸気と反応させて製膜する方法である。一般的には、製膜した化合物が高融点のため、抵抗加熱ではそのまま蒸着できないものを、金属状態で蒸発させてから導入ガスと反応させて製膜する方法として用いる。
【００３２】
本発明の熱膨張温度センサ層は、上記のような熱膨張係数が０．３×１０−４Ｋ−１以上の熱膨張材料であるハロゲン化銀、ハロゲン系化合物、ガリウム含有カーボンナノ材料などで形成する。
【００３３】
高熱伝導絶縁層２Ａ、低熱伝導絶縁層２Ｂ、熱膨張温度センサ層３、高熱伝導絶縁層４の各薄膜層の膜厚は、１ｎｍから１０００ｎｍであり、好ましくは５ｎｍから５００ｎｍである。ただし、熱膨張温度センサ層３を被覆する高熱伝導絶縁層４については、１〜５ｎｍであることがより好ましい。
【００３４】
図１の具体的実施例をあげれば、シリコン単結晶などを異方性エッチングやフォトリソグラフィーの手法を利用して先端部を０．５μｍになるように台形状に形成させた支持基体上に、ＣＶＤ，電子ビーム蒸着法などを利用して高熱伝導絶縁層、例えばＡｌＮを５００ｎｍ積層させる。さらに同様な方法で低熱伝導絶縁層例えばガラス材を２００ｎｍ積層させる。この上に熱膨張温度センサ層３、例えばＧａを同様な方法で３００ｎｍ積層させる。さらに熱膨張温度センサ層３の保護を目的とした高熱伝導絶縁層、例えばＡｌＮを同様な方法で１０ｎｍ形成させることにより得る。
【００３５】
図２（Ａ）、（Ｂ）及び（Ｃ）には、図１に示す本発明に係る熱膨張材料を用いたマイクロ熱膨張温度センサをＡＦＭ用カンチレバーに設置した３つの実施例が示されている。
【００３６】
高熱伝導絶縁層２Ａ、低熱伝導絶縁層２Ｂ、熱膨張温度センサ層３、高熱伝導絶縁層４の各薄膜層の温度変化による熱膨張変化の時定数が０．５ｍｓから５０ｍｓが好ましい。
【００３７】
熱膨張による変位量の検出には、レーザーを用いた変位センサ［図２（Ａ）］、ピエゾ抵抗体を利用したもの［図２（Ｂ）］、ひずみゲージを利用する方法［図２（Ｃ）］など公知の方法が利用できる。
【００３８】
図３は、本発明における光熱変換分光法に用いるための、ＦＴ−ＩＲ（Ｆｏｕｒｉｅｒ Ｔｒａｎｓｆｏｒｍ Ｉｎｆｒａｒｅｄ Ｓｐｅｃｔｒｏｃｏｐｙ）又はチョッパーを利用する光学系を示している。かかる光学系の構成は公知のものを特別の制限なく利用できる。
【００３９】
【発明の効果】
本発明によれば、高感度な熱膨張温度センサとなりうる抵抗温度係数の大きな素材である熱膨張材料を用いたマイクロ熱膨張温度センサを提供できる。
【図面の簡単な説明】
【図１】本発明に係るマイクロ熱膨張温度センサの一実施例を示す概略構成図
【図２】本発明に係るマイクロ熱膨張温度センサをカンチレバーに設置した３例を示す概略構成図
【図３】本発明の光熱変換分光法に用いる光学系の例を示す概略構成図
【符号の説明】
１ 支持基体
２Ａ 高熱伝導絶縁層
２Ｂ 低熱伝導絶縁層
３ 熱膨張温度センサ層
４ 高熱伝導絶縁層[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a micro thermal expansion temperature sensor using a thermal expansion material, and in particular, a thermal expansion material suitable for use in temperature measurement of a very small portion below the diffraction limit of light by photothermal conversion spectroscopy. The present invention relates to a micro thermal expansion temperature sensor.
[0002]
[Prior art]
In conventional microscopic (ultraviolet / visible / near infrared / infrared) spectroscopy, it is very difficult in principle to measure and observe a region or material smaller than the diffraction limit of light. However, by applying a method that avoids the influence of the diffraction limit, it is possible to measure regions smaller than this limit.
[0003]
In recent years, a new spectroscopic method capable of measuring a region smaller than the diffraction limit of light has been attracting attention in recent years. One is a method using near-field light, and the other is photothermal conversion spectroscopy. In any of these methods, measurement is performed without being influenced by the diffraction limit of light (or under negligible conditions). In the latter method using photothermal conversion spectroscopy, an attempt to perform spectroscopic measurement by capturing a change in thermal expansion accompanying light irradiation has already been studied (MS Anderson, Applied Spectroscopy, 54, 349, 2000). ).
[0004]
In this method, thermal expansion due to heat generated by light irradiation is measured by measuring changes in the amount of cantilever displacement in an AFM (Atomic Force Microscopy). However, it cannot be said that the thermal expansion coefficient (linear expansion coefficient or body expansion coefficient; the same applies in this specification) of organic / polymeric materials that are usually observed is high, and of course, measurement sensitivity is extremely insufficient.
[0005]
[Problems to be solved by the invention]
Therefore, an object of the present invention is to provide a micro thermal expansion temperature sensor using a thermal expansion material that is a material having a large resistance temperature coefficient that can be a highly sensitive thermal expansion temperature sensor.
[0006]
[Means for Solving the Problems]
The present invention for solving the above problems has the following configuration.
1. [Claims]
The tip of the claims 1 supporting substrate, using a micro heat expansion temperature sensor having a thermal expansion temperature sensor layer made of a material having a high thermal expansion coefficient, met micro thermal expansion temperature sensor for temperature measurement of the small region In addition , a heat conduction control layer is provided between the support base and the thermal expansion temperature sensor layer, and a sample contact side of the thermal expansion temperature sensor layer is a micro- coat covered with a high thermal conductivity insulating layer. In the thermal expansion temperature sensor, the thermal conduction control layer includes a high thermal conductive insulating layer located on the support base side and a low thermal conductive insulating layer located on the thermal expansion temperature sensor side, and the high thermal conductive insulating layer Is made of an insulating material having a thermal conductivity of 100 W / mK or more and a thermal expansion coefficient of 10 × 10 −6 / K or less, and the low thermal conductivity insulating layer has a thermal conductivity of less than 10 W / mK and a thermal expansion coefficient of 10 × 10 −6 / Below K Micro thermal expansion temperature sensor using a thermal expansion material, characterized in that it consists of an edge material.
[0009]
2. 2. The micro thermal expansion temperature sensor using the thermal expansion material as described in 1 above, wherein the thermal expansion temperature sensor layer has a thermal expansion coefficient of 25 × 10 −6 / K or more.
[0011]
3. The support substrate is a micro displacement sensor substrate such as an AFM cantilever, and it is possible to measure the temperature of extremely minute parts below the diffraction limit of light by photothermal conversion spectroscopy that performs spectroscopic measurement by capturing changes in thermal expansion caused by light irradiation. 3. A micro thermal expansion temperature sensor using the thermal expansion material as described in 1 or 2 above.
[0012]
4). 4. The micro thermal expansion temperature sensor using the thermal expansion material as described in any one of 1 to 3 above, wherein the temperature of a minute part can be measured for purposes other than spectroscopic measurement.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail.
The support substrate of the present invention is a micro displacement sensor substrate such as an AFM cantilever, and examples of the material forming the support substrate include semiconductor materials such as ceramics, piezoelectric materials, and silicon, or insulating materials, and the shape of the tip of the support substrate. May be trapezoidal, acicular, hemispherical or the like.
[0014]
Examples of the heat-sensitive resistance material having a large thermal expansion coefficient for forming the thermal expansion temperature sensor layer of the present invention include Ga, P, Tl, Zn, Rb, silver salt compounds (AgCl, AgBr, AgNO 3 etc.), halogen compounds (BeCl). 2 , CdCl 2 , CuCl 2 , Hg 2 Cl 2 , KCl, MgCl 2 , NaCl, RbCl, SnCl 2 , ZnCl 2 ), KNO 3 , KClO 3 , KMnO 4 , Al alloy, Mg alloy, etc. it is a 10 -6 / K or more compounds, or any other thermal expansion material having a thermal expansion coefficient of more than 25 × 10 -6 / K. A carbon nanotube material or the like encapsulating the thermal expansion material may be used.
[0015]
In order to improve the time constant as a thermal expansion temperature sensor, in addition to forming the thermal expansion temperature sensor layer by thinning the above material to the order of nm, an appropriate amount is provided between the support substrate and the thermal expansion temperature sensor layer. This can be achieved by providing a heat conduction control layer having a low thermal expansion and a low thermal conductivity.
[0016]
When measuring the temperature of a minute region, it is important that heat generated by light irradiation can be efficiently transmitted to the thermal expansion temperature sensor. However, in a sensor using a material that expands thermally, it is not necessary to simply increase the thermal conductivity. For example, if a metal such as copper having a high thermal conductivity is used for the substrate, the thermal conductivity increases, but conversely However, the thermal expansion temperature sensor layer does not sufficiently expand, so that heat is quickly diffused and the temperature change detection sensitivity is decreased. Therefore, it is preferable to arrange a plurality of layers of materials having the optimum thermal conductivity in accordance with the purpose (temperature, time constant, type of sample) on the supporting substrate provided with the portion in contact with the sample and / or the thermal expansion temperature sensor.
[0017]
In the present invention, the thermally conductive control layer, and the high thermal conductive insulating layer positioned on the support base side, Ru consists a low thermal conductive insulating layer located on the thermal expansion temperature sensor side. Also, the portion in contact with the sample Ru provided high heat conductive insulating layer.
[0018]
As a material having a high thermal conductivity (and an insulating or conductive material having a small thermal expansion) used for the high thermal conductive insulating layer of the present invention, an insulating material-beryllia porcelain (BeO), A1N, SiC, alumina single crystal, polycrystalline (sapphire) Ruby), MgO, TiO 2 (rutile), ThO 2 (thermal conductivity: 10 W / mK or more), etc. Among these materials, the thermal conductivity is 100 W / mK or more, and the thermal expansion coefficient is 5 More preferably, AlN (trade name Denka AN plate), SiC, etc. of 10 −6 / K or less is used to coat the high thermal conductive insulating layer constituting the thermal conduction control layer and the thermal expansion temperature sensor layer. The two high thermal conductive insulating layers may be made of the same material or different materials.
[0019]
Examples of the insulating material having low thermal conductivity and low thermal expansion used for the low thermal conductive insulating layer of the present invention include quartz glass, glass [trade name: Pyrex (registered trademark)], boron glass, mica, and the like (thermal conductivity of 0. 0). 5-5 W / mK).
[0020]
In the present invention, the high thermal conductivity insulating layer is made of an insulating material having a thermal conductivity of 100 W / mK or more and a thermal expansion coefficient of 10 × 10 −6 / K or less, more preferably 5 × 10 −6 / K or less. The layer is made of an insulating material having a thermal conductivity of less than 10 W / mK and a thermal expansion coefficient of 10 × 10 −6 / K or less, more preferably 5 × 10 −6 / K or less. And if it deviates from this range, the effect of the present invention cannot be obtained.
[0021]
According to the second aspect of the present invention, the thermal expansion temperature sensor layer has a thermal expansion coefficient of 25 × 10 −6 / K or more. When the thermal expansion coefficient is less than the above range, the volume expansion coefficient associated with the temperature change is lowered, and it is difficult to detect the temperature change with high sensitivity.
[0023]
The thermal expansion temperature sensor according to the present invention can detect a temperature change accompanying light irradiation with high sensitivity.
[0024]
The micro thermal expansion temperature sensor according to the present invention can also be used for temperature measurement of a minute part for purposes other than spectroscopic measurement.
[0025]
【Example】
In one embodiment of the present invention, as shown in FIG. 1, the thermal expansion is small at the tip of the support base 1 made of a semiconductor material or an insulator material that is tapered below the light diffraction limit (<1.0 μmφ). A heat
[0026]
Specifically, one or more high thermal conductive insulating layers 2A having appropriate thermal conductivity and appropriately holding heat are provided on the support base 1 side with the thermal expansion temperature sensor layer 3 interposed therebetween. In one embodiment of the present invention, the high thermal conductive insulating layer 2A is provided by beryllia porcelain (beryllium oxide), alumina single crystal, or the like, which is an insulating material having a small thermal expansion and high thermal conductivity. Then, on this layer 2A, a low thermal conductive insulating layer 2B made of a glass material having a low thermal expansion and a low thermal conductivity is provided.
[0027]
On the other hand, the thermal expansion temperature sensor layer 3 is protected on the upper part of the thermal expansion temperature sensor layer 3 (the part that is in direct contact with the sample), and the thermal expansion for the purpose of efficiently transferring the heat from the sample is small and heat conduction. A highly thermally conductive insulating layer 4 made of a highly insulating material (in one embodiment of the present invention, made of beryllia porcelain (beryllium oxide), alumina single crystal, etc.) is provided.
[0028]
In the present invention, the thin film layers of the high thermal conductive insulating layer 2A, the low thermal conductive insulating layer 2B, the thermal expansion temperature sensor layer 3 and the high thermal conductive insulating layer 4 are produced by resistance heating vapor deposition, electron beam vapor deposition, chemical vapor phase. Known techniques and apparatuses such as a deposition method and an atmospheric pressure plasma method can be used.
[0029]
The thin film layers (films) 2A, 2B, 3 and 4 are produced by using a film forming method using the material as it is as an evaporation source, and a reaction for forming a film while introducing oxygen gas into the vacuum using the evaporation material as an evaporation source. There is a vapor deposition method, and any method can form a film.
[0030]
As a film forming apparatus, any known apparatus can be used without particular limitation as long as it is used for a generally known resistance heating vapor deposition method, electron beam vapor deposition method, chemical vapor deposition method, sputtering method or the like. be able to.
[0031]
The chemical vapor deposition method (CVD = Chemical Vapor Deposition) introduces a gas (oxygen, nitrogen, fluorine, chlorine, reactive special gas, etc.) into a vacuum chamber and applies a high piezoelectric field to this gas. This is a method of forming a film by reacting with material vapor evaporated from a heated boat after being turned into plasma. In general, since a compound formed into a film has a high melting point, a compound that cannot be deposited as it is by resistance heating is used as a method for forming a film by evaporating in a metal state and reacting with an introduced gas.
[0032]
The thermal expansion temperature sensor layer of the present invention is composed of silver halide, a halogen-based compound, a gallium-containing carbon nanomaterial which is a thermal expansion material having a thermal expansion coefficient of 0.3 × 10 −4 K −1 or more as described above. Form.
[0033]
The film thickness of each thin film layer of the high thermal conductive insulating layer 2A, the low thermal conductive insulating layer 2B, the thermal expansion temperature sensor layer 3, and the high thermal conductive insulating layer 4 is 1 nm to 1000 nm, preferably 5 nm to 500 nm. However, the high thermal conductive insulating layer 4 covering the thermal expansion temperature sensor layer 3 is more preferably 1 to 5 nm.
[0034]
To give a specific example of FIG. 1, on a support substrate in which a silicon single crystal or the like is formed in a trapezoidal shape with a tip portion of 0.5 μm by using an anisotropic etching or photolithography technique, A high thermal conductive insulating layer, for example, AlN is deposited to a thickness of 500 nm by using CVD, electron beam evaporation or the like. Further, a low thermal conductive insulating layer such as a glass material is laminated by 200 nm by the same method. On this, a thermal expansion temperature sensor layer 3, for example, Ga, is laminated by 300 nm in the same manner. Further, it is obtained by forming a 10 nm high thermal conductive insulating layer, for example, AlN, for the purpose of protecting the thermal expansion temperature sensor layer 3 by the same method.
[0035]
FIGS. 2A, 2B, and 2C show three examples in which the micro thermal expansion temperature sensor using the thermal expansion material according to the present invention shown in FIG. 1 is installed in an AFM cantilever. Yes.
[0036]
The time constant of the thermal expansion change due to the temperature change of each thin film layer of the high thermal conductive insulating layer 2A, the low thermal conductive insulating layer 2B, the thermal expansion temperature sensor layer 3, and the high thermal conductive insulating layer 4 is preferably 0.5 ms to 50 ms.
[0037]
For detection of displacement due to thermal expansion, a displacement sensor using a laser [FIG. 2A], a sensor using a piezoresistor [FIG. 2B], and a method using a strain gauge [FIG. 2C )] Etc. can be used.
[0038]
FIG. 3 shows an optical system using FT-IR (Fourier Transform Infrared Spectroscopy) or a chopper for use in photothermal conversion spectroscopy in the present invention. A known optical system can be used without any particular limitation.
[0039]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the micro thermal expansion temperature sensor using the thermal expansion material which is a raw material with a large resistance temperature coefficient which can become a highly sensitive thermal expansion temperature sensor can be provided.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing one embodiment of a micro thermal expansion temperature sensor according to the present invention. FIG. 2 is a schematic configuration diagram showing three examples in which the micro thermal expansion temperature sensor according to the present invention is installed on a cantilever. Schematic configuration diagram showing an example of an optical system used in the photothermal conversion spectroscopy of the present invention.
DESCRIPTION OF SYMBOLS 1 Support base body 2A High heat conductive insulating layer 2B Low heat conductive insulating layer 3 Thermal expansion temperature sensor layer 4 High heat conductive insulating layer
Claims (4)
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