JP4003285B2 - Film adhesive excellent in reflow resistance, lead frame and semiconductor device using the same - Google Patents

Film adhesive excellent in reflow resistance, lead frame and semiconductor device using the same Download PDF

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Publication number
JP4003285B2
JP4003285B2 JP08596998A JP8596998A JP4003285B2 JP 4003285 B2 JP4003285 B2 JP 4003285B2 JP 08596998 A JP08596998 A JP 08596998A JP 8596998 A JP8596998 A JP 8596998A JP 4003285 B2 JP4003285 B2 JP 4003285B2
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Japan
Prior art keywords
adhesive
film
lead frame
reflow resistance
solvent
Prior art date
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Expired - Fee Related
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JP08596998A
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Japanese (ja)
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JPH11284001A (en
Inventor
秀一 松浦
スダルサナム クリシュナマチャリ
明子 五十嵐
則之 斉藤
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Priority to JP08596998A priority Critical patent/JP4003285B2/en
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Description

【0001】
【発明の属する技術分野】
本発明は、半導体パッケージにおいて接着部材として用いられるフィルム状接着剤及びそれを用いたリードフレーム及び半導体装置に関する。特に耐リフロー性に優れたフィルム状接着剤に関する。
【0002】
【従来の技術】
半導体パッケージではLOC(lead on chip)やCOL(chip on lead)構造、あるいは枠タブ構造等においてリードフレームとチップの接続に、また放熱板付き、複合リードフレームにおいてインナーリードとヒートスプレッダの接続にベースフィルムの片側または両側に接着剤を塗布した複合フィルムからなる接合部材が用いられている。
従来、半導体用リードフレームと半導体素子との接合にはエポキシ系やゴム変成エポキシ系などの熱硬化性接着剤、あるいポリイミドやポリアミドイミド等の耐熱性ホットメルト接着剤が使用されている。これらの接着剤を用いてパッケージを組んだ場合、吸湿後にはんだリフロー等の加熱を行なう接着剤中の水分が気化膨張してパッケージが膨れ、はなはだしい場合にはクラックが生じるという問題がある。
この問題に対処するため吸湿後の加熱によって膨れない耐リフロー性の優れた接着剤が望まれている。
従来、接着温度低下あるいは加工性向上の観点から溶剤を残存させることが試みられている。例えば、意識的に溶剤を残留させ樹脂を柔らかくしたり(特開平3−64386)、ポリイミドの溶融加工に際し、溶剤を加工助剤として用いたり(特開昭60−118741)、(特開昭55−16026)しているが、加工性は向上するが半導体パッケージに用いた場合、耐リフロー性が向上することについてはなんら示唆していない。
【0003】
【発明が解決しようとする課題】
本発明は、このような問題点を解決するものであり、半導体パッケージにおいて接着部材として用いられる耐リフロー性に優れたフィルム状接着剤、それを用いたリードフレーム及び半導体装置を提供するものである。
【0004】
【課題を解決するための手段】
本発明者らは、鋭意検討した結果、特定の溶剤を特定量耐熱性樹脂ワニス中に混合した接着剤組成物から形成した接着剤層が耐リフロー性に優れることを見い出し、本発明を完成するに至った。
本発明の接着剤組成物は、ガラス転移温度250℃以下の耐熱性樹脂と沸点が250℃以上である溶剤が前記樹脂に対して3〜30重量%、カップリング剤が前記樹脂に対して10重量%以下、フィラーが前記樹脂に対して100重量%以下、沸点が250℃より低い溶剤からなることを特徴とする。
接着剤組成物は耐リフロー性に優れたフィルム状接着剤であることができ、接着剤組成物が基材の少なくとも一面に形成されてなる耐リフロー性に優れたフィルム状接着剤であることができる。
前記の接着剤層はリードフレーム上で使用され、リードフレームに半導体素子を搭載し半導体装置とすることができる。
【0005】
すなわち、本発明はガラス転移温度250℃以下の耐熱性樹脂と沸点が250℃以上である溶剤が該樹脂に対して3〜30重量%、カップリング剤が該樹脂に対して10重量%以下、フィラーが該樹脂に対して100重量%以下、沸点が250℃より低い溶剤からなることを特徴とする耐リフロー性に優れた接着剤組成物、及びそれを用いたリードフレーム、及び半導体装置を提供する。
【0006】
【発明の実施の形態】
本発明において用いられる接着剤はガラス転移温度250℃以下、好ましくは150〜250℃の耐熱性熱可塑性樹脂を主成分とする耐熱性接着剤であることが望ましく、そのためにはポリイミド接着剤およびポリアミド接着剤が好ましい。
ここでポリイミドとはポリアミドイミド、ポリエステルイミド、ポリエーテルイミド等のイミド基を有する樹脂を含む。
【0007】
本発明において接着剤層中に残存される溶剤は沸点が250℃以上で、好ましくは50℃以上で固体である溶剤である。該溶剤としてはスルホラン、グリセリン等が挙げられる。接着剤を溶解する溶剤として沸点が250℃より低い溶剤を用い、接着剤溶液中に沸点が250℃以上の溶剤を添加してフィルム状接着剤を作製するのが好ましい。
本発明において残存溶剤量はフィルムを300℃、30分乾燥して、乾燥前後の重量変化から算出した。
残存溶剤量が0.5%より少ないと耐リフロー性向上の効果が少なく、10wt%より多いと接着時の発泡が著しくなり、好ましくない。
【0008】
本発明において耐リフロー性の評価はフィルム状接着剤を銅板に貼り付けた後、水中に温室で24時間浸潰した後、所定の温度の熱盤上に20秒間放置した際、フィルム状接着剤の周辺部に発泡が初めて生じる温度を発泡温度として耐リフロー性の指標とした。
本発明の接着部材に使用される耐熱性接着剤は単独で用いてもよいし、ベースフィルム又はシート等の基材上に塗布または含浸して用いてもよい。また、耐熱性接着剤を単独で用いる場合は半導体チップやリードフレームなどの被着体に直接塗布して用いてもよいし、予めシート状にして被着体に適用し、熱圧着して用いてもよい。
【0009】
本発明において用いられる基材はフィルム、ガラス布、炭素繊維布、ポリアラミド布等のクロス、銅箔、アルミ箔、ステンレス箔等の金属箔等である。
ベースフィルムとして用いられる耐熱性フィルムは、ポリイミド、ポリアミドやポリサルフォン、ポリフェニレンサルファイド、ポリエーテルエーテルケトン、ポリアリレートなどのエンジニアリングプラスチック等のフィルムが挙げられる。 耐熱性フィルムのガラス転移温度(Tg)は、本発明で用いられる耐熱性接着剤のTgより高いものが使用され、好ましくは200℃以上、より好ましくは250℃以上のものが使用される。耐熱性フィルムの吸水率は3重量%以下、好ましくは2重量%以下のものが使用される。
従って、本発明に用いられる耐熱性フィルムとしては、Tg、吸水率、熱膨張係数の点からポリイミドフィルムが好ましい。Tgが250℃以上、吸水率が2重量%以下、熱膨張係数が3x10−5/℃以下の物性を備えたフィルムが特に好ましい。
耐熱性フィルムは接着剤との接着力を増すために表面処理を施すことが望ましい。表面処理の方法としては、アルカリ処理、シランカップリング処理等の化学処理、サンドブラスト等の物理的処理、プラズマ処理、コロナ処理等のいずれの処理も使用可能であるが、接着剤の種類に応じて最も適した処理を用いればよい。本発明において耐熱性接着剤を適用するに際して、耐熱性フィルムに施す表面処理としては、化学処理またはプラズマ処理が特に適している。
【0010】
本発明においてフィルム状接着剤は基材の片側または両側に耐熱性接着剤を塗布乾燥することによっても得られる。両側に塗布される耐熱性接着剤は同一でも異なっていても良い。
耐熱性接着剤(ワニス)を耐熱性フィルムに塗布する方法は特に制限はない。ドクターブレードやナイフコーター、ダイコーター等いずれの方法で塗布してもよい。またワニス中にフィルムを通して塗工してもよいが、厚みの制御が難しいので好ましくない。
【0011】
本発明において耐熱性接着剤を塗布したフィルムを溶剤の除去やイミド化のために熱処理する場合に、熱処理温度はポリアミド酸ワニスであるかポリイミドワニスであるかで異なる。
ポリアミド酸ワニスの場合には、イミド化されるためにTg以上の温度が必要であるがポリイミドワニスの場合には溶剤が除去できる温度であればよい。
本発明の接着剤にはセラミック粉、ガラス粉、銀粉、銅粉、ゴム粒子、樹脂粒子などのフィラーやカップリング剤を添加して用いてもよい。
ゴム粒子としては耐熱性の点からシリコーンゴム粒子が好ましく、特に接着剤樹脂との接着性、相溶性の点からコアシェル構造あるいは表面処理した粒子が好ましい。
【0012】
カップリング剤としては、ビニルシラン、エポキシシラン、アミノシラン、メルカプトシラン、チタネート、アルミキレート、ジルコアルミネート等のカップリング剤が使用されるが、シランカップリング剤が好ましく、エポキシシラン系カップリング剤が特に好ましい。
【0013】
【実施例】
以下、実地例により本発明を詳細に説明するが、本発明はこれらの範囲に限定されるものではない。
実施例
撹拌機、温度計、窒素ガス導入管及び留出管を備えた1000m1四つ口フラスコにアジピン酸とヘキサンジオールからなる分子量1500のカルボキシ末端ポリエステル 15g、ビスフェノールAビストリメリテート二無水物 5.25g、スルホラン 110g、3−メチル−1−フェニル−3−ホスホレン−1−オキシド 0.09gを加え、窒素雰囲気化、撹拌しながら200℃に昇温した。ジフェニルメタンジイソシアネート(MDI)4.7gを加えた後、200℃で1時間反応させた後、室温まで冷却した。得られたコポリマー反応液をメタノールに注ぎ、得られる沈殿を分離し、これをミキサーで粉砕し、水洗した後、乾燥してポリエステル含量60wt%のポリエステルイミド粉末を得た。得られたポリエステルイミド粉末をゲル浸透クロマトグラフィー(以下、GPCと略す;溶離液はMDF、液速度は1ml/分、検出はUV検出器)を用いて測定したところ、重量平均分子量はポリスチレン換算で 230000であった。
このポリエステルイミド粉末の30gとγ−グリシドキシプロピルトリメトキシシラン〔以下、CPLと略す〕の0.9g(CPLの量:3重量%)をとり、シクロヘキサノン86.4g、スルホラン 3.6gを加えて溶かし、ワニスを調整した。
上記ワニスを50μm厚のポリイミドフィルム(宇部興産(株)製、ユーピレックスS)の片面に厚さが25μmとなるように塗布し、100℃で15分、さらに250℃で15分加熱処理して耐熱性接着剤付きフィルムを得た。
接着剤層のペネトレーション法によるガラス転移温度は155℃であった。
得られた耐熱性接着剤層付き耐熱フィルムを10mm×20mmの大きさに切断し、これをリードフレーム材である銅合金に、温度:180℃、圧力:3MPa及び時間:3秒の条件で圧着させたのち、水中に温室で24時間浸漬した。吸水させたフィルム付き銅板を所定の温度の熱盤上に20秒間置き、発泡温度を測定したところ200℃であった。
【0014】
【発明の効果】
本発明のフィルム状接着剤は、吸湿後の耐リフロー性が優れている。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film adhesive used as an adhesive member in a semiconductor package, a lead frame using the same, and a semiconductor device. In particular, the present invention relates to a film adhesive excellent in reflow resistance.
[0002]
[Prior art]
For semiconductor packages, a base film is used to connect the lead frame and the chip in a LOC (lead on chip) structure, a COL (chip on lead) structure, or a frame tab structure, and to connect the inner lead and the heat spreader in a composite lead frame with a heat sink. The joining member which consists of a composite film which apply | coated the adhesive agent to the one side or both sides of this is used.
Conventionally, a thermosetting adhesive such as an epoxy type or a rubber-modified epoxy type, or a heat resistant hot melt adhesive such as polyimide or polyamideimide has been used for joining a semiconductor lead frame and a semiconductor element. When a package is assembled using these adhesives, there is a problem in that moisture in the adhesive that performs heating such as solder reflow after moisture absorption evaporates and expands and the package expands.
In order to cope with this problem, an adhesive having excellent reflow resistance that does not swell due to heating after moisture absorption is desired.
Conventionally, attempts have been made to leave a solvent from the viewpoint of lowering the bonding temperature or improving workability. For example, the solvent is consciously left to soften the resin (Japanese Patent Laid-Open No. 3-64386), the solvent is used as a processing aid in the melt processing of polyimide (Japanese Patent Laid-Open No. 60-118741), However, there is no suggestion that the reflow resistance is improved when used in a semiconductor package.
[0003]
[Problems to be solved by the invention]
The present invention solves such problems, and provides a film-like adhesive having excellent reflow resistance used as an adhesive member in a semiconductor package, a lead frame using the same, and a semiconductor device. .
[0004]
[Means for Solving the Problems]
As a result of intensive studies, the present inventors have found that an adhesive layer formed from an adhesive composition obtained by mixing a specific solvent in a specific amount of a heat-resistant resin varnish has excellent reflow resistance, and completes the present invention. It came to.
In the adhesive composition of the present invention, a heat-resistant resin having a glass transition temperature of 250 ° C. or lower and a solvent having a boiling point of 250 ° C. or higher are 3 to 30% by weight with respect to the resin, and a coupling agent is 10 with respect to the resin. It is characterized by comprising a solvent having a weight% of not more than 100% by weight and a filler having a boiling point lower than 250 ° C.
The adhesive composition can be a film adhesive excellent in reflow resistance, and the adhesive composition can be a film adhesive excellent in reflow resistance formed on at least one surface of a substrate. it can.
The adhesive layer is used on a lead frame, and a semiconductor element can be mounted on the lead frame to form a semiconductor device.
[0005]
That is, in the present invention, a heat-resistant resin having a glass transition temperature of 250 ° C. or lower and a solvent having a boiling point of 250 ° C. or higher are 3 to 30% by weight with respect to the resin, and a coupling agent is 10% by weight or less with respect to the resin. Provided is an adhesive composition excellent in reflow resistance, characterized in that the filler comprises a solvent of 100% by weight or less with respect to the resin and has a boiling point lower than 250 ° C., and a lead frame and a semiconductor device using the adhesive composition To do.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
The adhesive used in the present invention is desirably a heat-resistant adhesive mainly composed of a heat-resistant thermoplastic resin having a glass transition temperature of 250 ° C. or lower, preferably 150 to 250 ° C. For that purpose, a polyimide adhesive and a polyamide are used. An adhesive is preferred.
Here, the polyimide includes a resin having an imide group such as polyamide imide, polyester imide, and polyether imide.
[0007]
In the present invention, the solvent remaining in the adhesive layer is a solvent having a boiling point of 250 ° C. or higher, preferably 50 ° C. or higher. Examples of the solvent include sulfolane and glycerin. A solvent having a boiling point lower than 250 ° C. is preferably used as a solvent for dissolving the adhesive, and a solvent having a boiling point of 250 ° C. or higher is added to the adhesive solution to produce a film adhesive.
In the present invention, the amount of residual solvent was calculated from the weight change before and after drying after the film was dried at 300 ° C. for 30 minutes.
If the residual solvent amount is less than 0.5%, the effect of improving the reflow resistance is small, and if it exceeds 10 wt%, foaming at the time of adhesion becomes remarkable, which is not preferable.
[0008]
In the present invention, the evaluation of reflow resistance is carried out by sticking a film adhesive on a copper plate, immersing it in water in a greenhouse for 24 hours, and then leaving it on a hot plate at a predetermined temperature for 20 seconds. The temperature at which foaming occurs for the first time in the periphery of the film was taken as the foaming temperature and used as an index of reflow resistance.
The heat-resistant adhesive used in the adhesive member of the present invention may be used alone, or may be applied or impregnated on a base material such as a base film or a sheet. In addition, when the heat-resistant adhesive is used alone, it may be directly applied to an adherend such as a semiconductor chip or a lead frame, or may be applied to the adherend in the form of a sheet in advance and used after thermocompression bonding. May be.
[0009]
The substrate used in the present invention is a film, glass cloth, carbon fiber cloth, cloth such as polyaramid cloth, metal foil such as copper foil, aluminum foil, and stainless steel foil.
Examples of the heat resistant film used as the base film include films of engineering plastics such as polyimide, polyamide, polysulfone, polyphenylene sulfide, polyether ether ketone, and polyarylate. The glass transition temperature (Tg) of the heat resistant film is higher than that of the heat resistant adhesive used in the present invention, preferably 200 ° C. or higher, more preferably 250 ° C. or higher. A heat-resistant film having a water absorption of 3% by weight or less, preferably 2% by weight or less is used.
Therefore, the heat resistant film used in the present invention is preferably a polyimide film from the viewpoint of Tg, water absorption, and thermal expansion coefficient. A film having physical properties of Tg of 250 ° C. or higher, water absorption of 2% by weight or less, and thermal expansion coefficient of 3 × 10 −5 / ° C. or less is particularly preferable.
The heat resistant film is desirably subjected to a surface treatment in order to increase the adhesive force with the adhesive. As the surface treatment method, any chemical treatment such as alkali treatment, silane coupling treatment, physical treatment such as sandblasting, plasma treatment, corona treatment, etc. can be used, depending on the type of adhesive. The most suitable process may be used. In applying the heat resistant adhesive in the present invention, chemical treatment or plasma treatment is particularly suitable as the surface treatment applied to the heat resistant film.
[0010]
In the present invention, the film adhesive can also be obtained by applying and drying a heat resistant adhesive on one side or both sides of the substrate. The heat resistant adhesive applied to both sides may be the same or different.
The method for applying the heat resistant adhesive (varnish) to the heat resistant film is not particularly limited. You may apply by any method, such as a doctor blade, a knife coater, and a die coater. Moreover, although it may coat through a film in a varnish, since control of thickness is difficult, it is unpreferable.
[0011]
In the present invention, when a film coated with a heat-resistant adhesive is heat-treated for solvent removal or imidization, the heat treatment temperature differs depending on whether it is a polyamic acid varnish or a polyimide varnish.
In the case of a polyamic acid varnish, a temperature equal to or higher than Tg is required for imidization, but in the case of a polyimide varnish, any temperature may be used as long as the solvent can be removed.
You may add and use fillers and coupling agents, such as ceramic powder, glass powder, silver powder, copper powder, rubber particles, and resin particles, to the adhesive of this invention.
As the rubber particles, silicone rubber particles are preferable from the viewpoint of heat resistance, and in particular, core-shell structure or surface-treated particles are preferable from the viewpoint of adhesiveness and compatibility with the adhesive resin.
[0012]
As the coupling agent, coupling agents such as vinyl silane, epoxy silane, amino silane, mercapto silane, titanate, aluminum chelate, zirco aluminate are used, but silane coupling agents are preferable, and epoxy silane coupling agents are particularly preferable. preferable.
[0013]
【Example】
Hereinafter, the present invention will be described in detail by way of practical examples, but the present invention is not limited to these ranges.
Example 15 g of carboxy-terminated polyester having a molecular weight of 1500 consisting of adipic acid and hexanediol in a 1000 m1 four-necked flask equipped with a stirrer, thermometer, nitrogen gas inlet tube and distillation tube, bisphenol A bistrimellitic dianhydride 25 g, 110 g of sulfolane, 0.09 g of 3-methyl-1-phenyl-3-phospholene-1-oxide were added, and the temperature was raised to 200 ° C. while stirring in a nitrogen atmosphere. After adding 4.7 g of diphenylmethane diisocyanate (MDI), the mixture was reacted at 200 ° C. for 1 hour, and then cooled to room temperature. The obtained copolymer reaction liquid was poured into methanol, and the resulting precipitate was separated, pulverized with a mixer, washed with water, and dried to obtain a polyesterimide powder having a polyester content of 60 wt%. The obtained polyesterimide powder was measured using gel permeation chromatography (hereinafter abbreviated as GPC; the eluent is MDF, the liquid speed is 1 ml / min, and the detection is a UV detector). The weight average molecular weight is in terms of polystyrene. 230,000.
30 g of this polyesterimide powder and 0.9 g of γ-glycidoxypropyltrimethoxysilane (hereinafter abbreviated as CPL) (the amount of CPL: 3% by weight) were added, and 86.4 g of cyclohexanone and 3.6 g of sulfolane were added. The varnish was adjusted.
The above varnish is applied to one side of a 50 μm-thick polyimide film (UPILEX S, manufactured by Ube Industries, Ltd.) to a thickness of 25 μm, and heat-treated at 100 ° C. for 15 minutes and further at 250 ° C. for 15 minutes. A film with an adhesive was obtained.
The glass transition temperature by the penetration method of the adhesive layer was 155 ° C.
The obtained heat-resistant film with a heat-resistant adhesive layer is cut into a size of 10 mm × 20 mm, and this is pressure-bonded to a copper alloy as a lead frame material under conditions of temperature: 180 ° C., pressure: 3 MPa, and time: 3 seconds. Then, it was immersed in water in a greenhouse for 24 hours. When the water-absorbed copper plate with a film was placed on a hot plate at a predetermined temperature for 20 seconds and the foaming temperature was measured, it was 200 ° C.
[0014]
【The invention's effect】
The film adhesive of the present invention has excellent reflow resistance after moisture absorption.

Claims (4)

ガラス転移温度250℃以下の耐熱性樹脂と前記樹脂に対して10重量%以下のカップリング剤とを含み、前記樹脂に対して3〜30重量%の沸点が250℃以上である溶剤と沸点が250℃より低い溶剤とにより調製したワニスから形成したフィルム状接着剤であって、フィルム状接着剤の残存溶剤量が0.5〜10重量%である耐リフロー性に優れたフィルム状接着剤。A solvent having a glass transition temperature of 250 ° C. or less and a coupling agent of 10% by weight or less with respect to the resin, and a boiling point of 3 to 30% by weight with respect to the resin of 250 ° C. or more. A film-like adhesive formed from a varnish prepared with a solvent lower than 250 ° C. , wherein the residual solvent amount of the film-like adhesive is 0.5 to 10% by weight and excellent in reflow resistance. 前記ワニスから形成した接着剤層が基材の少なくとも一面に形成されてなる請求項1に記載の耐リフロー性に優れたフィルム状接着剤。The film adhesive excellent in reflow resistance according to claim 1, wherein an adhesive layer formed from the varnish is formed on at least one surface of the substrate. 請求項1または請求項2に記載のフィルム状接着剤を備えるリードフレーム。  A lead frame comprising the film adhesive according to claim 1. 請求項3に記載のリードフレームに半導体素子を搭載した半導体装置。  A semiconductor device having a semiconductor element mounted on the lead frame according to claim 3.
JP08596998A 1998-03-31 1998-03-31 Film adhesive excellent in reflow resistance, lead frame and semiconductor device using the same Expired - Fee Related JP4003285B2 (en)

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JP08596998A JP4003285B2 (en) 1998-03-31 1998-03-31 Film adhesive excellent in reflow resistance, lead frame and semiconductor device using the same

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JP4003285B2 true JP4003285B2 (en) 2007-11-07

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