JP3983070B2 - Metal oxide film, capacitive element, and manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a metal oxide film, a method for manufacturing a capacitor element using the metal oxide film as a dielectric film, and a method for manufacturing a semiconductor device provided with the metal oxide film.
[0002]
[Prior art]
Conventionally, a silicon nitride film (Si ₃ N ₄ ) or silicon oxide (SiO ₂ ) has been used as a dielectric film for capacitive elements of various LSIs including DRAM (Dynamic Random Access Memory). In recent years, with the high integration of semiconductor devices, the area occupied by capacitive elements in the semiconductor devices is also decreasing.
[0003]
On the other hand, in order to maintain insulation resistance and reliability as a memory, the capacitance value is required to increase rather. In order to secure a capacitance value while limiting the area occupied by the capacitive element, it is effective to use a material having higher dielectric characteristics as the dielectric film forming the capacitive element. In recent years, a tantalum oxide (Ta ₂ O ₅ ) thin film has been developed as such a high dielectric film.
[0004]
The relative dielectric constant of each material is shown below.
SiO ₂ : 3.9
Si ₃ N ₄ : 7
Ta ₂ O ₅ : 25
[0005]
Sputtering, CVD (Chemical Vapor Deposition), sol-gel, etc. have been developed as methods for producing such a tantalum oxide thin film having a high relative dielectric constant. Chemical vapor deposition) is used.
[0006]
The CVD apparatus for performing this MOCVD method uses an organometallic compound or a liquid obtained by dissolving it in a solvent as a film forming material. Such an organometallic compound material and a liquid obtained by dissolving this in a solvent are collectively referred to as a liquid material hereinafter. An example of the liquid material is, for example, pentaethoxy tantalum (PET; Ta (OC ₂ H ₅ ) ₅ ) which is most commonly used.
[0007]
When forming a tantalum oxide thin film by the MOCVD method, pentaethoxytantalum and a gas such as oxygen as an oxygen supply source are simultaneously introduced into the reaction chamber into which the substrate to be processed is inserted, and the thin film is formed with the mixed gas. ing.
[0008]
[Problems to be solved by the invention]
A capacitive element using a tantalum oxide thin film with a high relative dielectric constant as a dielectric film can achieve a high capacity, but has a problem that electrical characteristics such as leakage current characteristics and dielectric strength characteristics are not sufficient. .
[0009]
One of the reasons why leakage current characteristics and dielectric strength characteristics are not sufficient is pointed out that when an organic metal compound is used as a film forming material, an organic component such as carbon remains in the thin film.
[0010]
Another factor is that the composition ratio of oxygen (0) and tantalum (Ta) in the tantalum oxide thin film is generally difficult to form in a stoichiometric state, and oxygen is insufficient. Are listed.
[0011]
Furthermore, the organic components remaining in the tantalum oxide thin film deprive oxygen in the tantalum oxide thin film when it is subjected to various heat treatments in the subsequent LSI manufacturing process, for example, in the form of CO or CO ₂ from the film. Resulting in. As a result, oxygen in the tantalum oxide thin film further depletes, and there is a disadvantage that the leakage current characteristics and the withstand voltage characteristics further deteriorate.
[0012]
Therefore, for the purpose of improving leakage current characteristics and dielectric strength characteristics, generally, after forming a tantalum oxide thin film, an oxidation treatment for improving the film quality is performed. For example, techniques such as high-temperature annealing treatment in an oxygen atmosphere, oxygen plasma treatment, or annealing treatment in an atmosphere containing ozone (O ₃ ) gas irradiated with ultraviolet rays are known.
[0013]
However, these oxidation treatments usually exert an effect of improving the film quality of the tantalum oxide thin film under conditions of 500 ° C. or higher. Therefore, it becomes impossible to form the capacitive element after the wiring forming process using the Al material.
[0014]
As described above, since the maximum temperature for forming the capacitor element is defined by this oxidation treatment, the electrical characteristics are improved, but there is a problem that the capacitor element forming stage in the semiconductor manufacturing process is restricted. In addition, there is a risk that the cost is increased due to the burden of deteriorating productivity due to an increase in LSI manufacturing processes and the necessity of dedicated equipment.
[0015]
In order to solve the above problems, in order to obtain good leakage current characteristics as a capacitive element, it is possible to effectively release organic components in the liquid material in the process of forming a tantalum oxide thin film that is a dielectric film. Desired.
[0016]
[Means for Solving the Problems]
In order to solve the above-described problem, in the present invention, in the process of forming a metal oxide film on the film formation surface, H ₂ O is actively generated during the formation of the metal oxide film. . Then, after the formation of the above-described metal oxide film, a moisture detachment process for detaching moisture in the metal oxide film is performed. Further, in forming the metal oxide film, the process of forming a film with an effective film thickness for removing moisture and the process of performing the water removing process are repeated to form the metal oxide film with the desired film thickness. .
[0017]
The present invention, in the process of forming the aforementioned metal oxide film, by using an organometallic compound material, a compound gas containing oxygen or oxygen, a mixed gas containing a compound gas containing hydrogen or hydrogen, H ₂ O is generated.
[0018]
Furthermore, in the present invention, the above-described metal oxide film is formed by chemical vapor deposition.
In the present invention, the metal oxide film is formed by a plasma chemical vapor deposition method.
[0019]
Further, in the present invention, a tantalum oxide film is formed as a metal oxide film using a material containing tantalum as an organometallic compound material.
Furthermore, the present invention uses pentaethoxytantalum as the organometallic compound material.
[0020]
Further, according to the present invention, the flow rate ratio of oxygen O ₂ as a material and pentaethoxy tantalum as an organometallic compound material in the formation of a metal oxide film is 10 to 50 in terms of molar flow rate.
[0021]
Further, the present invention, as the water withdrawal process, after the metal oxide film forming, heat treatment is performed at a deposition temperature or higher.
In the present invention, plasma irradiation is performed as the moisture detachment process.
[0022]
Furthermore, according to the present invention, the metal oxide film is formed and the moisture detachment process is performed in the same apparatus .
[0023]
As described above, in the present invention, when forming the metal oxide film, which generates a positively H ₂ O, by doing so, H ₂ O generated during the film formation is decomposed Thus, the metal oxide film can be formed with good quality.
[0024]
In particular, the film was formed by generating H ₂ O using a mixed gas containing an organometallic compound material, oxygen or a compound gas containing oxygen, and hydrogen or a compound gas containing hydrogen. The organic component in the metal oxide film can be efficiently separated, and the lack of oxygen in the metal oxide film can be avoided, so that the metal oxide film can be formed with good characteristics.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following examples, and it is needless to say that various other material configurations can be adopted.
[0026]
In this embodiment mode, the present invention is applied to a case where a metal oxide film, particularly a tantalum oxide film, is formed as a capacitor insulating film of a semiconductor device including a capacitor element. An example in which a film is formed by the method shown in FIG.
[0027]
In this example, a case where a metal oxide film is formed as a capacitor insulating film of a semiconductor device is shown. In particular, a tantalum oxide film is provided, and each layer including the tantalum oxide film is formed by a plasma CVD method.
[0028]
FIG. 1 shows a configuration of an example of a plasma CVD apparatus 1, and in this case, an example using a helicon wave plasma source.
The plasma CVD apparatus 1 includes a helicon wave plasma generation source 2 and a reaction vessel 4 communicating with a bell jar 3 made of quartz or the like for generating the plasma.
[0029]
A substrate 5 having a film formation surface, such as a semiconductor wafer, is placed in the reaction vessel 4, and a susceptor 6 provided with a heater for heating the substrate 5 to a required temperature is disposed.
The reaction vessel 4 is provided with a gas introduction port 7 for introducing a process gas, exhausted from the exhaust port 8 by an exhaust means (not shown), and the inside of the reaction vessel 4 is made by a pressure regulator (not shown). The degree of vacuum is adjusted to a desired level.
[0030]
In the process generation source 2, a helicon antenna 9 is disposed on the outer periphery of the bell jar 3, and RF power of 18.56 MHz is applied to the helicon antenna 9 via an impedance matching means 11 from a high frequency (RF) oscillator 10.
[0031]
Further, an inner coil 12A and an outer coil 12B are wound in the vicinity of the bell jar 3. The coils 12A and 12B are supplied with direct current (DC) having different directions from the DC power sources 13A and 13B through current control means 14A and 14B, respectively, to form magnetic fields, and adjust the current values and the ratios thereof. The plasma generated in the bell jar 3 is extracted by helicon wave propagation, and the plasma uniformity in the vicinity of the substrate 5 is obtained by the interaction with the magnetic field generated by the magnetic field generating means 15 by the permanent magnet or electromagnet installed on the side surface of the reaction vessel 4. Has been made to adjust.
[0032]
In this example, the plasma CVD apparatus 1 having this configuration uses an organic metal compound material as the gas species to be supplied, forms a metal oxide film by MOCVD, and particularly uses MOCVD using pentaethoxytantalum (hereinafter referred to as PET). A tantalum oxide thin film was formed by the method as a capacitive insulating film of the capacitive element in the DRAM described above.
[0033]
Although omitted in FIG. 1, PET is compressed and compressed with a pressurizing gas inside a liquid material container, and then controlled to a desired flow rate with a liquid flow meter, and further sent to a vaporizer heated to a desired temperature. Then, a liquid material, in this case, PET is vaporized and introduced into the reaction vessel 4 from the gas inlet 7 together with a gas for further improving the transport efficiency. An inert gas is generally used for the pressurization gas and the transport gas, but the conditions are that the gas does not react with the liquid material PET or does not dissolve in the liquid material, in other words, does not deteriorate the liquid material. Is selected. Further, the transport piping path from the vaporizer to the reaction vessel 4 is all heated by a heating means such as a tape heater so that the liquid material vaporized at this time does not re-liquefy.
[0034]
Here, the hydrolyzability of PET will be described. FIG. 2 shows the molecular structure of PET. Usually, the reaction of removing an organic component with a material that is an oxidation source such as oxygen, as shown in FIG. 3, oxygen and carbon, or oxygen and hydrogen react to form CO, HO, etc. Go.
[0035]
On the other hand, as shown in FIG. 4, the reaction with H ₂ O breaks the bond between oxygen and carbon of the alkoxyl group constituting PET, the oxygen of PET is terminated with hydrogen, and the ethyl group is terminated with a hydroxyl group. To do. By this reaction, it can be seen that organic components of PET can be efficiently separated by using H ₂ O, that is, by actively generating H ₂ O and forming a tantalum oxide thin film from PET. .
[0036]
On the other hand, to explain the properties of other liquid materials used as CVD film forming materials, in general, liquid materials are in a liquid state even at room temperature and normal pressure, and often cause hydrolysis when exposed to air. The reactivity varies with each material.
[0037]
For example, when a silicon oxide thin film is formed by CVD, tetraethoxysilane (TEOS; Si (OC ₂ H ₅ ) ₄ ), which is widely used as a film forming material, is a typical compound that is slowly hydrolyzed.
[0038]
However, as described above, PET is known as a representative of a highly reactive compound, and in the present invention, a high-quality tantalum oxide thin film can be formed by utilizing such properties. It is. In other words, the present invention pays attention to the fact that PET is a material having high hydrolyzability, so that a higher-quality tantalum oxide thin film can be formed.
[0039]
Prior to the formation of the metal oxide film, the present inventors changed the gas flow rate ratio when forming the tantalum oxide thin film with a mixed gas of PET and oxygen using the above-mentioned plasma CVD apparatus, The current leakage characteristics of the deposited tantalum oxide thin film, in this case, the dependence of the breakdown voltage, were investigated.
[0040]
In this example, a tantalum oxide thin film was formed as a capacitive insulating film of the capacitive element, a DC component voltage (V) was applied to the electrode layer, and a leakage current density (I) was measured.
[0041]
The leakage current density has a region that does not increase to a certain value with respect to a change in applied voltage, and then enters a so-called Pool-Frenkel current region. Since the voltage immediately before this is a region where the LSI can be used stably, the withstand voltage of this measurement was defined as the voltage before the Pool-Frenkel current flows. The result is shown in FIG.
[0042]
As can be seen from FIG. 5, when the flow ratio of oxygen O ₂ gas and PET gas is decreased, the breakdown voltage of the leakage current tends to be improved, and expressed as a molar ratio [O ₂ / Ta (OC ₂ H ₅ ) ₅ ]. ,
[O ₂ / Ta (OC ₂ H ₅ ) ₅ ] ≦ 50
It can be seen that superiority appears.
[0043]
Further, the relationship between the particles generated during film formation and the molar ratio [O ₂ / Ta (OC ₂ H ₅ ) ₅ ] was measured. The result is shown in FIG. As can be seen from FIG. 6, when the molar flow rate ratio [O ₂ / Ta (OC ₂ H ₅ ) ₅ ] is less than 10, the amount of generated particles increases and it is difficult to perform good film formation. Recognize. For this reason, the molar ratio is
10 ≦ [O ₂ / Ta (OC ₂ H ₅ ) ₅ ]
It can be seen that favorable film formation can be performed.
[0044]
Further, as a result of analyzing this tantalum oxide thin film, a large amount of H ₂ O remains in the film under the condition that the molar flow rate ratio [O ₂ / Ta (OC ₂ H ₅ ) ₅ ] between O ₂ gas and PET gas is small. It was found that it was included. As a result, oxygen introduced at the same time as hydrogen contained in the PET reacts during the reaction to form H ₂ O, which promotes hydrolysis, so that the organic components in the tantalum oxide thin film are efficiently separated. Conceivable.
[0045]
As described above, when the molar flow rate ratio [O ₂ / Ta (OC ₂ H ₅ ) ₅ ] between oxygen and PET is 10 or more and 50 or less as a condition for forming a tantalum oxide thin film in the plasma CVD method, good results are obtained. can get.
[0046]
The reaction of positively generating H ₂ O during the formation of the tantalum oxide thin film includes, for example, H ₂ + O ₂ or H ₂ O ₂ in addition to reacting hydrogen in PET with the introduced oxygen gas. It can be promoted by using.
[0047]
A case where the metal oxide film thus formed is used as a capacitor insulating film of a capacitor element of a semiconductor device will be described with reference to a schematic enlarged sectional view of FIG. This example shows a case where the present invention is applied to a capacitor element of a DRAM.
[0048]
In FIG. 7, reference numeral 31 denotes, for example, a p-type substrate made of silicon or the like, on which a thick element isolation region 32 is formed in addition to the transistor region by selective oxidation or the like, and the above-described tantalum oxide thin film is formed thereon. For example, an electrode layer 34 on the fixed potential side that constitutes the capacitive element is formed via the capacitive insulating film 33.
[0049]
Reference numeral 35 denotes an insulating layer made of silicon oxide or the like, and 36 denotes a gate insulating film. The gate electrode 37 and impurity regions 39 on both sides thereof constitute a switching MOS transistor. Reference numeral 38 denotes an electrode layer for a word line made of, for example, polysilicon. Reference numeral 40 denotes an insulating layer made of thick silicon oxide or the like, and an electrode layer 41 on the bit line side made of Al or the like is formed in a predetermined pattern. Reference numeral 42 denotes a protective film.
[0050]
In such a configuration, the above-described tantalum oxide thin film is formed as the capacitive insulating film of the capacitive element while actively generating H ₂ O by the plasma CVD method, thereby providing excellent leakage current characteristics and withstand voltage characteristics. A membrane could be obtained.
[0051]
As described above, in the present invention, as a method of efficiently removing organic components from an organometallic material to form a metal oxide film, it is effective to actively generate H ₂ O and form the metal oxide film. I explained that. However, on the other hand, the formation of H ₂ O during the film formation reaction may cause the moisture to remain in the film and possibly deteriorate the leakage current characteristics. As a countermeasure against this, in the present invention, after forming the metal oxide film by the above-described method, the film quality can be further improved by releasing the moisture taken into the film.
[0052]
As the method, by maintaining the substrate temperature at 100 ° C. or higher, the ratio of residual moisture can be considerably reduced. The higher the substrate temperature, the lower the residual ratio of moisture, but the upper limit temperature is naturally limited due to the influence on the lower electrode material and other elements. For example, if the substrate is already formed with Al for applications such as the lower electrode and other wiring, the upper limit temperature is set to 450 ° C., more preferably 400 ° C. Etc. can be avoided. By such moisture desorption treatment by heating, it is possible to avoid deterioration of leakage current characteristics due to moisture remaining in the tantalum oxide thin film.
[0053]
Furthermore, even in the case of plasma irradiation as a moisture detachment process, moisture can be activated or the substrate temperature can be raised to effectively reduce the proportion of moisture remaining in the film.
[0054]
Further, in order to efficiently perform the above-described moisture desorption process, by alternately forming the metal oxide film and the above-described moisture desorption process, the film is formed to the target metal oxide film thickness. Without depending on the thickness of the metal oxide film, it is possible to reliably form a metal oxide film having a good film quality with a low residual moisture ratio.
[0055]
In the above embodiment, an example has been shown in which a good film quality can be obtained when a tantalum oxide thin film is formed using PET as a film forming material. However, the present invention is a liquid rich in hydrolysis. Needless to say, the present invention can be applied to various cases in which a metal oxide film is formed using a material. For example, in addition to PET as an organic metal material, Ta (OCH ₃ ) ₅ , Ta (OC ₃ H ₇ ) ₅ , Ta (OC ₄ H ₉ ) ₅ , Ta (OC ₂ H ₅ ) ₄ (OCHCH ₂ N (CH _{3 2} ) etc. can be used to form a metal oxide film with good characteristics.
[0056]
【The invention's effect】
As described above, in the present invention, when forming the metal oxide film, which generates a positively H ₂ O, by doing so, H ₂ O generated during the film formation is decomposed Thus, the metal oxide film can be formed with good quality.
[0057]
In particular, in forming the film, H ₂ O is actively generated using a mixed gas containing an organometallic compound material, oxygen or a compound gas containing oxygen, and hydrogen or a compound gas containing hydrogen, thereby forming a film. The organic component in the formed metal oxide film can be efficiently separated, and the lack of oxygen in the metal oxide film can be avoided, so that the metal oxide film can be formed with good characteristics.
[0058]
In addition, when the tantalum oxide thin film is formed, the present invention is applied when the film is formed by plasma CVD using PET, thereby reducing oxygen deficiency in the film and ensuring the concentration of impurities such as residual carbon. By applying to the case of forming a tantalum oxide thin film as a capacitive insulating film of the capacitive element, the leakage current characteristics can be remarkably improved, and the characteristics of the capacitive element are improved. As a result, a semiconductor device having a capacitor can be manufactured with good characteristics.
[0059]
Furthermore, by forming a metal oxide film and then performing a moisture detachment process, the proportion of moisture remaining in the film can be reliably reduced, and a metal oxide film with better leakage current characteristics can be formed. .
[Brief description of the drawings]
FIG. 1 is a configuration diagram of an example of a plasma processing apparatus.
FIG. 2 is a diagram showing the molecular structure of pentaethoxytantalum (PET).
FIG. 3 is an explanatory diagram of a reaction between pentaethoxytantalum (PET) and oxygen gas.
FIG. 4 is an explanatory diagram of the reaction between pentaethoxytantalum (PET) and H ₂ O.
FIG. 5 is a graph showing the relationship of the breakdown voltage characteristics of leakage current with respect to the molar flow rate ratio of O ₂ gas and pentaethoxytantalum gas.
FIG. 6 is a graph showing the relationship between the amount of particles generated and the molar flow rate ratio of O ₂ gas and pentaethoxytantalum gas.
FIG. 7 is a schematic enlarged cross-sectional view of an example of a semiconductor device.
[Explanation of symbols]
1 plasma processing apparatus, 2 plasma generation source, 3 bell jar, 4 reaction vessel, 5 substrate, 6 susceptor, 7 gas inlet, 8 exhaust port, 9 helicon antenna, 10 high frequency transmitter, 11 impedance matching means, 12A inner coil, 12B outer coil, 13A DC power source, 13B DC power source, 14A current control unit, 14B current control unit, 15 magnetic field generation unit, 31 substrate, 32 element isolation region, 33 capacitive insulating film, 34 electrode layer, 35 insulating layer, 36 gate Insulating film, 37 gate electrode, 38 electrode layer, 39 impurity region, 40 insulating layer, 41 electrode layer, 42 protective film

Claims (30)

In the process of forming a metal oxide film on the deposition surface, H ₂ O is actively generated ,
After the formation of the metal oxide film, a moisture detachment process for detaching moisture in the metal oxide film is performed,
In forming the metal oxide film, the process of forming the film with an effective film thickness for the moisture desorption process and the process of performing the water desorption process are repeated to form the metal oxide film with the desired film thickness. I do
Method of forming a metal oxide film, wherein the this. In the process of forming the metal oxide film, H ₂ O is generated using a mixed gas containing an organometallic compound material, oxygen or a compound gas containing oxygen, and hydrogen or a compound gas containing hydrogen. The metal oxide film forming method according to claim 1, wherein the metal oxide film is formed.   3. The method for forming a metal oxide film according to claim 1, wherein the metal oxide film is formed by chemical vapor deposition.   4. The method for forming a metal oxide film according to claim 1, wherein the metal oxide film is formed by a plasma chemical vapor deposition method.   5. The method for forming a metal oxide film according to claim 2, wherein a tantalum oxide film is formed as the metal oxide film using a material containing tantalum as the organometallic compound material. .   6. The method for forming a metal oxide film according to claim 2, wherein pentaethoxy tantalum is used as the organometallic compound material. 7. The flow rate ratio between oxygen O _{2 as a} material in the formation of the metal oxide film and pentaethoxy tantalum as the organometallic compound material is 10 to 50 in terms of molar flow rate ratio. 2. A method for forming a metal oxide film according to 1. 2. The metal oxide film deposition method according to claim 1 , wherein, as the moisture desorption process, a heat treatment is performed at a temperature equal to or higher than a film deposition temperature after the metal oxide film is deposited. As the water leaving the treatment method of forming the metal oxide film according to the claim 1, wherein the plasma irradiation. 10. The method for forming a metal oxide film according to claim 1, wherein the metal oxide film is formed and the moisture desorption process is performed in the same apparatus. In a method for manufacturing a capacitive element using a metal oxide film as a capacitive insulating film,
In the process of forming a metal oxide film on the deposition surface, H ₂ O is actively generated ,
After the formation of the metal oxide film, a moisture detachment process for detaching moisture in the metal oxide film is performed,
In forming the metal oxide film, the process of forming the film with an effective film thickness for the moisture desorption process and the process of performing the water desorption process are repeated to form the metal oxide film with the desired film thickness. A method for manufacturing a capacitor element, characterized in that: In the process of forming the metal oxide film, H ₂ O is generated using a mixed gas containing an organometallic compound material, oxygen or a compound gas containing oxygen, and hydrogen or a compound gas containing hydrogen. The method of manufacturing a capacitive element according to claim 11 , wherein the capacitive element is manufactured. 13. The method for manufacturing a capacitive element according to claim 11 , wherein the metal oxide film is formed by chemical vapor deposition. 14. The method for manufacturing a capacitive element according to claim 11 , wherein the metal oxide film is formed by a plasma chemical vapor deposition method. 15. The method for manufacturing a capacitor element according to claim 12 , wherein a tantalum oxide film is formed as the metal oxide film using a material containing tantalum as the organometallic compound material. 16. The method of manufacturing a capacitive element according to claim 12, 13, 14 or 15 , wherein pentaethoxytantalum is used as the organometallic compound material. The claim 16, wherein the oxygen O ₂ of the material in the deposition of the metal oxide film, the flow ratio of pentaethoxytantalum as the organic metal compound material, that is 10 or more and 50 or less in molar flow ratio The manufacturing method of the capacitive element as described in 2. 12. The method for manufacturing a capacitor element according to claim 11 , wherein, as the moisture desorption process, a heat treatment is performed at a temperature equal to or higher than a film formation temperature after the metal oxide film is formed. The method for manufacturing a capacitor element according to claim 11 , wherein plasma irradiation is performed as the moisture desorption process. 20. The method for manufacturing a capacitive element according to claim 11 , wherein the formation of the metal oxide film and the moisture desorption process are performed in the same apparatus. In a method for manufacturing a semiconductor device having a metal oxide film,
In the process of forming a metal oxide film on the deposition surface, H ₂ O is actively generated ,
After the formation of the metal oxide film, a moisture detachment process for detaching moisture in the metal oxide film is performed,
In forming the metal oxide film, the process of forming the film with an effective film thickness for the moisture desorption process and the process of performing the water desorption process are repeated to form the metal oxide film with the desired film thickness. A method of manufacturing a semiconductor device. In the process of forming the metal oxide film, H ₂ O is generated using a mixed gas containing an organometallic compound material, oxygen or a compound gas containing oxygen, and hydrogen or a compound gas containing hydrogen. The method of manufacturing a semiconductor device according to claim 21 , wherein the method is characterized in that: 23. The method of manufacturing a semiconductor device according to claim 21 , wherein the metal oxide film is formed by chemical vapor deposition. 24. The method of manufacturing a semiconductor device according to claim 21 , wherein the metal oxide film is formed by a plasma chemical vapor deposition method. 25. The method of manufacturing a semiconductor device according to claim 22 , wherein a tantalum oxide film is formed as the metal oxide film using a material containing tantalum as the organometallic compound material. 26. The method of manufacturing a semiconductor device according to claim 22 , wherein the organic metal compound material is pentaethoxytantalum . The claim 26, wherein the oxygen O ₂ of the material in the deposition of the metal oxide film, the flow ratio of pentaethoxytantalum as the organic metal compound material, that is 10 or more and 50 or less in molar flow ratio The manufacturing method of the semiconductor device as described in any one of Claims 1-3. The method of manufacturing a semiconductor device according to claim 21 , wherein, as the moisture desorption process, after the metal oxide film is formed, a heat treatment is performed at a temperature equal to or higher than a film formation temperature. The method of manufacturing a semiconductor device according to claim 21 , wherein plasma irradiation is performed as the moisture desorption process. 30. The method of manufacturing a semiconductor device according to claim 21 , wherein the formation of the metal oxide film and the moisture desorption process are performed in the same apparatus.

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