JP3964662B2 - How to remove the board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of taking out substrate by which the abnormally placed state and strain of a carrier and the abnormally driven state of a detecting device can be detected and a substrate can be held normally by means of a take-out and housing arm. <P>SOLUTION: This method of taking out substrate includes a standard mapping step of detecting the position of each standard substrate housed in each standard slot made in a standard carrier by deciding or detecting the thickness and pitch of the standard substrate, and a substrate-to-be-treated mapping step of detecting the thickness, pitch, and position of a substrate to be treated housed in each slot made in a carrier. This method also includes a comparing and discriminating step of comparing the thickness and pitch of each standard substrate decided or detected in the standard mapping step with the thickness, pitch, and position of the substrate to be treated detected in the substrate-to-be- treated mapping step, and discriminating the taking-out of a substrate to be treated in accordance with the results of the comparison. <P>COPYRIGHT: (C)2003,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for removing a substrate such as a semiconductor wafer or glass for an LCD substrate from a carrier.
[0002]
[Prior art]
For example, in a semiconductor device manufacturing process, a processing system including a single wafer processing apparatus that supplies a processing liquid to a semiconductor wafer (hereinafter referred to as “wafer”) to perform a predetermined processing is used. When a wafer is loaded into such a single wafer processing apparatus, a wafer carrier case (hereinafter referred to as “carrier”) containing a plurality of, for example, 25 wafers is mounted on the loading / unloading section of the processing system. The wafers are placed on the table and taken out one by one from the carrier by the take-out and storage arm of the wafer transfer device provided in the loading / unloading unit, and transferred to the transfer mechanism for loading and unloading the wafers into the single wafer processing unit. I have to. An opening is provided in the carrier that accommodates the wafer in the mounting table so that the wafer is carried in and out through one side surface of the carrier. In addition, 25 slots for holding the wafer at predetermined intervals are provided on the inner wall. One wafer is accommodated in each slot with the surface on which the semiconductor device is formed as the upper surface, whereby a gap set at a constant pitch is formed between the wafers. The wafer transfer device can access the take-out and storage arm in a gap of any height provided in the carrier placed on the placement table. The slot on the inner wall of the carrier allows the peripheral edge of the wafer to be inserted with a margin (play) so that the wafer can be easily taken out and stored. In the back of the carrier, a space into which the tip member of the take-out storage arm is inserted is provided. This tip member is formed at such a height that the take-out and storage arm can be inserted into the gap between the wafers. Therefore, when the take-out and storage arm is inserted horizontally from the opening into the gap between the wafers, slightly lifted upward on the back side of the carrier, and retracted to the carrier opening side, the tip member comes into contact with the peripheral edge of the wafer on the back side of the carrier. The wafer can be pulled out. In this way, the wafer is taken out of the carrier by horizontally retracting the take-out storage arm together with the wafer.
[0003]
By the way, in this type of carrier in which the gap (pitch) between the wafers is very narrow, it is necessary to accurately insert the take-out and storage arm into the gap. Further, it is necessary to insert the take-out and storage arm after confirming that the wafer is stored in the slot. Furthermore, when a cross slot occurs, for example, when the wafer is held diagonally across two slots, if the take-out and storage arm enters the wafer, the wafer contacts the wafer and is damaged. Need to be detected. Therefore, before inserting the take-out storage arm, measure the thickness of the wafer and the pitch between the wafers to detect the lower entry / exit position, and confirm that the pitch and thickness are alternately detected at regular intervals. ing. As an apparatus for detecting the pitch and thickness, for example, an optical sensor in which a pair of light emitting units and light receiving units are opposed to each other is used. That is, a part of the wafer enters a horizontal state between the light emitting unit and the light receiving unit, and is moved in the vertical direction while irradiating the beam light between the light emitting unit and the light receiving unit, thereby reducing the pitch between the wafers. The thickness of the wafer can be measured optically. As a result of the measurement, if the pitch and thickness were acceptable, it was judged that there was no abnormality, and the lower entry / exit position of the take-out / storage arm was determined as the distance from the lower surface of the wafer to be taken out, and the take-out / storage arm was inserted.
[0004]
[Problems to be solved by the invention]
However, the conventional substrate taking-out method has a problem that it cannot be detected as abnormal when the carrier is inclined and placed on the mounting table. For example, there may be a foreign object on the mounting table, and the carrier may be tilted on the mounting table. As a result, even if all the wafers in the carrier are held tilted from the horizontal, the pitch and thickness are detected alternately at regular intervals, so it is determined that the wafers are normally accommodated. . As a result, there is a problem that the take-out / storage arm enters the obliquely held wafer, the wafer cannot be normally held by the take-out / storage arm, and the wafer cannot be normally taken out. In addition, since the carrier that accommodates the wafer is distorted during long-term use, almost all the wafers in the carrier are tilted from the horizontal, and it is possible to detect such deformation of the carrier. could not. Furthermore, if there is an abnormality in the driving means of the device that detects the pitch and thickness, for example, if the motor that moves the optical sensor in the vertical direction is defective, it is detected even if the wafer is stored normally. Since the pitch and the thickness are not constant, there is a problem that it is judged not as an abnormality of the driving means but as an abnormality of the wafer accommodation state.
[0005]
Accordingly, an object of the present invention is to detect an abnormality in the mounting state of the carrier, distortion of the carrier, and an abnormality in driving of the detection device, and take out the substrate that can be normally held by the take-out and storage arm. It is to provide a method.
[0006]
[Means for Solving the Problems]
In order to solve the above problems, the present invention Is A method of holding a plurality of substrates in multiple stages by a carrier having a plurality of slots for horizontally holding the substrate and taking out the substrates from the carrier, each reference substrate stored in each reference slot provided in the reference carrier A reference mapping step for determining or detecting the thickness and pitch of the substrate and detecting the position, and a substrate mapping step for detecting the thickness, pitch and position of each substrate to be processed housed in each slot provided in the carrier; The thickness, pitch and position determined or detected in the reference mapping step are compared with the thickness, pitch and position detected in the substrate mapping process, and a determination is made to take out the substrate in accordance with the comparison result. Has comparison judgment process To do. In this substrate removal method, even if the pitch and thickness are alternately detected at regular intervals in the substrate mapping process, the carrier is obtained by comparing with the reference mapping data in the comparison judgment process. It is possible to detect a state in which all the substrates are held tilted. In such a case, the removal of the substrate is stopped, so that an abnormal holding of the substrate by the take-out and storage arm can be prevented.
[0007]
In the comparison judgment step, an error between the thickness, pitch and position detected in the reference mapping step and the thickness, pitch and position detected in the substrate mapping step is detected, and the error is within an allowable error range. If eject is performed To do. As a result, The substrate can be taken out normally.
[0008]
In the present invention, When the position detected in the substrate mapping process is outside the allowable error range and is higher than the position detected in the reference mapping process, the removal is stopped and the carrier is tilted. Detect state To do. Since it is possible to detect the state in which the carrier is inclined and placed, it is possible to prevent an abnormal holding of the substrate by the take-out and storage arm by making this a normal state.
[0009]
Also, When the position detected in the substrate mapping process is outside the allowable error range and narrower than the position detected in the reference mapping process, the removal is stopped and the carrier containing the substrate to be processed is replaced. You may do it. Further, when the pitch and position detected in the target substrate mapping step are out of the range of each allowable error and are lower than the positions detected in the reference mapping step, the removal is stopped and the target substrate is stopped. You may make it replace | exchange the carrier which accommodated. In this case, it is possible to detect the replacement time of the deformed carrier.
[0010]
When the number of substrates to be processed detected in the substrate mapping process is larger than the number of reference substrates detected in the reference mapping step, it is preferable to stop taking out and detect a defect in the substrate detection means.
[0011]
Further, when the error is outside the allowable error range, the substrate to be processed mapping step may be performed again. In this case, the data reliability can be improved by reconfirming the data of the substrate to be processed.
[0012]
It is preferable that the tolerance of the position is set to be the narrowest for the lowermost substrate. Furthermore, the tolerance of the position may be set wider gradually from the lowermost substrate toward the uppermost substrate.
[0013]
In the substrate take-out method of the present invention, it is preferable to detect the thickness, pitch and position by moving an optical sensor along a direction in which the plurality of substrates are arranged.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a preferred embodiment of the present invention will be described based on a loading / unloading section configured to place a carrier containing a wafer as an example of a substrate and take out the wafer from the carrier. FIG. 1 is a plan view of a cleaning processing system 1 incorporating a carry-in / out unit for performing a substrate take-out method according to the present invention. FIG. 2 is a side view thereof. The cleaning processing system 1 includes a cleaning processing unit 2 that performs a cleaning process on the wafer W and a thermal process after the cleaning process, and a loading / unloading unit 3 that loads the wafer W into and out of the cleaning processing unit 2. .
[0015]
The loading / unloading unit 3 includes an in / out port 4 for loading / unloading a carrier C storing a plurality of, for example, 25 wafers W1 to W25, and a carrier C mounted on the in / out port 4 and a cleaning processing unit. 2 includes a wafer transfer unit 5 that transfers the wafer W to and from the wafer 2.
[0016]
The in / out port 4 is provided with a mounting table 10 on which the carrier C is mounted. On the upper surface 11 of the mounting table 10, for example, three carriers C can be placed in a predetermined position in the Y direction on the horizontal plane. The carrier C is placed with the wafer take-out storage port 15 provided with a lid facing the boundary wall 17 between the in / out port 4 and the wafer transfer unit 5.
[0017]
FIG. 3 is a perspective view of the carrier C that accommodates the wafers W1 to W25 having a predetermined thickness (actual thickness RB). Each of the wafers W1 to W25 is taken out and stored through a wafer takeout / storing port 15 formed on the front surface of the carrier C. The wafer take-out storage port 15 is provided with an openable / closable lid (not shown). Wafers W1 to W25 are accommodated one by one in slots S1 to S25 provided at regular intervals on the inner walls of both sides of the carrier C. Each of the slots S1 to S25 has a substantially V-shaped cross section as shown in FIG. 9, and accommodates the peripheral portions of the wafers W1 to W25 with a margin (play). In the state where the carrier C is mounted on the mounting table 10, as shown in FIG. 9, the slots S1 to S25 hold the wafers W1 to W25 at regular intervals in the vertical direction. At this time, the wafers W <b> 1 to W <b> 25 are held in a state where the surface (the surface on which the semiconductor device is formed) is the upper surface (the surface that is the upper side when the wafer W is held horizontally). In addition, each of the slots S1 to S25 is in a state in which the peripheral edge of each of the wafers W1 to W25 is held by a substantially V-shaped lower slope, and the wafers W1 to W25 having a predetermined thickness (actual thickness RB) are determined. Can be held substantially horizontally at an interval of (actual pitch RP). Here, the actual thicknesses RB1 to RB25 are actual thicknesses of the wafers W1 to W25, and the actual pitches RP2 to RP25 are the lower surfaces of the wafers W2 to W25 and the wafers W1 to W24 held below the wafers W1 to W24. The distance between the top surface. Since there is no wafer below the wafer W1 held at the lowermost stage, there is no actual pitch RP1.
[0018]
A window 20 is formed in the boundary wall 17 at a position corresponding to the place where the carrier C is placed. The window 20 is opened and closed by a shutter or the like on the wafer transfer unit 5 side of the window 20. A mechanism 21 is provided. The window opening / closing mechanism 21 can also open and close the lid provided on the carrier C, and simultaneously opens and closes the lid of the carrier C. When the window 20 is opened to allow the wafer take-out / storing port 15 of the carrier C to communicate with the wafer transfer unit 5, the wafer C can be accessed by the wafer transfer device 25 disposed in the wafer transfer unit 5 and the wafer C can be accessed. W can be taken out and stored. The window opening / closing mechanism 21 is preferably provided with an interlock so that it does not operate when the carrier C is not placed at a predetermined position on the placement table 10.
[0019]
4 is a plan view of the wafer transfer device 25, and FIG. 5 is a front view thereof. The base 30 of the wafer transfer device 25 disposed in the wafer transfer unit 5 is fixed to the upper end of a rod 32 that moves up and down by rotational drive of a servo mechanism (not shown). Therefore, the base 30 can be moved in the Z direction by moving the rod 32 up and down. The wafer transfer device 25 is configured to be movable in the Y direction and to be rotatable in the XY plane (θ direction). In addition, the wafer transfer device 25 has a take-out and storage arm 35 (described later) for taking out the wafer W from the carrier C, and the take-out and storage arm 35 is slidable in the X direction. In this way, the wafer transfer device 25 can access all the carriers C mounted on the mounting table 10, access any slot S <b> 1 to slot S <b> 25 provided on the carrier C, and , The upper and lower two wafer transfer units 67 and 68 provided in the cleaning processing unit 2 are accessed, and the in / out port 4 side is moved to the cleaning processing unit 2 side, and conversely, the cleaning processing unit 2 side is moved in / out. The wafer W can be transferred to the port 4 side.
[0020]
The base 30 of the wafer transfer device 25 includes a take-out and storage arm 35 that takes out the wafer W from the carrier C, a pair of wafer holding members 36a and 36b, and a pair of sensor arms 37a and 37b. Further, as shown in FIG. 6, a guide groove 38b for guiding the sensor arm 37b is provided on the side surface of the base 30, and the sensor arm 37a is guided on the opposite side surface of the base 30. A similar guide groove 38a is provided.
[0021]
The take-out storage arm 35 is a plate formed on the upper surface so as to have a width and a length on which the wafer W can be placed. It is configured to be possible. Further, since the take-out storage arm 35 is provided on the base 30 that can be moved up and down in the Z direction by the rotational drive of the servo motor of the servo mechanism (not shown) described above, it can move in the Z direction shown in FIG. . Further, a distal end member 41 having a stepped portion 40 is provided at the distal end of the take-out and storage arm 35, and a stepped portion 42 is provided on the proximal end side of the take-out and storage arm 35. As shown in FIG. 9, the tip member 41 and the stepped portion 42 are formed at such a height that the take-out and storage arm 35 can be inserted into the gaps between the wafers W1 to W25. When the take-out and storage arm 35 advances horizontally from the gap between the wafers W to the lower back position on the back side in the carrier C and rises slightly at the lower back position, as shown in FIG. The step portion 40 and the step portion 42 are in contact with the lower surface of the plate. That is, the stepped portion 40 abuts on the lower surface peripheral portion on the wafer take-out and storage port 15 side, and the stepped portion 42 contacts the lower surface peripheral portion on the back side in the carrier C, whereby the wafer W can be placed on the take-out and storage arm 35. it can. When the take-out and storage arm 35 is horizontally retracted from the gap with the wafer W placed thereon, the tip member 41 abuts on the side edge of the inner side of the carrier C, so that the wafer W is supported on the take-out and storage arm 35 and taken out. be able to.
[0022]
Here, the process of taking out the wafer W (i) stored in the slot S (i) positioned i-th from the slot S1 side among the slots S1 to S25 of the carrier C from the slot S (i) will be described. . First, the take-out and storage arm 35 that has not received the wafer W is moved from above the base 30 to below the wafer W (i), and the take-out and storage arm 35 is made to face the lower surface of the wafer W (i). At this time, if the wafer is accommodated in the slot located under the slot S (i), the wafer W (i) and the position below the wafer W (i) are arranged so as not to interfere with the wafer located below. To move between the wafers. That is, for example, when the wafer W (i-1) is stored in the i-1th slot S (i-1) counted from the slot S1 side, the take-out storage arm 35 stands by on the base 30. Moving from the standby position to the lower entry / exit position located between the wafer W (i) and the wafer W (i-1), and further moving horizontally from the lower entry / exit position toward the back side in the carrier C, The take-out and storage arm 35 is horizontally moved (slid) to the lower back position facing the lower surface of the wafer W (i). Next, the take-out storage arm 35 is raised and brought into contact with the lower surface of the wafer W (i). Then, the supported wafer W (i) is raised to the upper back position where it does not contact the upper part of the slot S (i). In this way, the wafer W (i) whose peripheral portion is held by the lower portion of the slot S (i) is supported by the take-out and storage arm 35 between the lower portion and the upper portion of the slot S (i). Become. Subsequently, the wafer W (i) is removed from the slot S (i) by withdrawing the take-out storage arm 35 supporting the wafer W (i) from the upper back position. At this time, the supported wafer W (i) is prevented from contacting the lower and upper portions of the slot S (i). That is, for example, the take-out and storage arm 35 supporting the wafer W (i) is horizontally moved (slid) from the upper back position, and is horizontally moved to the upper entry / exit position where the wafer W (i) is completely unloaded from the slot S (i). Let In this way, the wafer W (i) can be taken out from the carrier C by the take-out storage arm 35 and moved onto the base 30.
[0023]
Next, a process of storing the wafer W (i) in the slot S (i) of the carrier C will be described. The take-out storage arm 35 supporting the wafer W is moved from the standby position on the base 30 to the upper entry / exit position where the peripheral edge of the wafer W (i) can be inserted into the slot S (i). Move horizontally (slide). Thus, the supported wafer W (i) is inserted between the lower portion and the upper portion of the slot S (i) without contacting the lower portion and the upper portion of the slot S (i). Then, the take-out storage arm 35 is inserted to the upper back position and lowered from the upper back position. At this time, the wafer W is held by the lower portion of the slot S, the lower surface of the wafer W is separated from the take-out storage arm 35, and the wafer W (i) is inserted into the slot S (i). Thereafter, the take-out storage arm 35 is moved out of the carrier C from below the wafer W (i). At this time, if the wafer is accommodated in the slot located under the slot S (i), the wafer W (i) and the position below the wafer W (i) are arranged so as not to interfere with the wafer located below. To move between the wafers. That is, for example, when the wafer W (i-1) is stored in the i-1th slot S (i-1) counted from the slot S1 side, the take-out storage arm 35 is moved from the lower back position to the lower input / output position. It is made to move horizontally (slide) to the standby position on the base 30. In this way, the wafer W (i) can be stored in the slot S (i) of the carrier C.
[0024]
The wafer holding members 36a and 36b are supported substantially horizontally by mounting brackets 45a and 45b on both sides of the base end portion of the take-out and storage arm 35, respectively. Further, the wafer holding members 36a and 36b form arcuate inner side surfaces 46a and 46b, respectively, toward the distal end side of the take-out and storage arm 35. When the take-out and storage arm 35 moves forward to the lower entry / exit position in the carrier C shown in FIG. 7 to load the wafer W in the carrier C and retracts to the standby position on the base 30 shown in FIG. The wafer W is held by the wafer W being sandwiched between the tip member 41 provided at the tip of 35 and the arc-shaped inner surface 46 of the wafer holding members 36a and 36b.
[0025]
A light emitting element (for example, a light emitting diode such as an LED or a laser diode) 50 and a light receiving element (for example, a phototransistor or a photodiode) 51 are attached to the tips of the sensor arms 37a and 37b so as to face each other. The light emitting element 50 and the light receiving element 51 are operated by a light emitting / light receiving element driving circuit (not shown). When no object exists between the light emitting element 50 and the light receiving element 51, the light LA emitted from the light emitting element 50 enters the light receiving element 51, and an output signal of “H” level, for example, is output from the light receiving element 51. However, when an object exists between the light emitting element 50 and the light receiving element 51, the light emitted from the light emitting element 50 is shielded by the object, so that it does not enter the light receiving element 51 and is output from the light receiving element 51. The output signal is, for example, “L” level. An output signal obtained from the light receiving element 51 is transmitted to the control unit 55 as a sensor detection signal.
[0026]
Since the sensor arms 37a and 37b are provided on the base 30 that can be moved up and down in the Z direction by the rotational drive of the servo mechanism (not shown) described above, the sensor arms 37a and 37b are movable in the Z direction. Furthermore, the sensor arms 37a and 37b are configured to be movable in the front-rear direction (X-axis direction in FIG. 1) with respect to the base 30 independently of the take-out and storage arm 35 by a drive mechanism (not shown). As shown in FIG. 8, the distance between the sensor arms 37a and 37b is such that both arms can enter inside the both side walls of the carrier C, and a part of the wafer W can enter horizontally between both arms. The size is chosen. Therefore, the sensor arms 37a and 37b can detect information on the actual thicknesses RB1 to RB25 and the actual pitches RP2 to RP25 of the wafers W1 to W25 accommodated in the carrier C.
[0027]
The servo mechanism has a servo motor that rotates based on, for example, a pulse signal transmitted from a rotary encoder, and the rod 32 and the wafer transfer device 25 are moved at a predetermined amount corresponding to the rotation amount of a predetermined angle of the servo motor. Move up and down in the Z direction. That is, one pulse of the pulse signal corresponds to the rotation amount of the servo motor at a predetermined angle, and thus corresponds to the predetermined movement amount of the rod 32. The controller 55 can detect the movement position of the wafer transfer device 25 by measuring the number of pulses of the pulse signal. The pulse signal transmitted from the rotary encoder is also used as a feedback signal for the servo mechanism.
[0028]
In the wafer transfer device 25, the substrate detection means according to the present embodiment includes a base 30, a rod 32, sensor arms 37a and 37b, drive mechanisms (not shown) of the sensor arms 37a and 37b, a light emitting element 50, a light receiving element 51, and It comprises a light emitting / light receiving element driving circuit (not shown).
[0029]
In mapping for detecting the processing wafer mapping data D including information on the thickness, pitch, and center position of the wafers W1 to W25 accommodated in the carrier C, the sensor arms 37a and 37b are moved from the bottom to the top. While the two sensor arms 37a and 37b are raised, the light LA from the light emitting element 50 is blocked each time the wafers W1 to W25 pass between the light emitting element 50 and the light receiving element 51. Then, an “L” level “wafer present signal” is output from the light receiving element 51, and this signal is input to the control unit 55. Further, while the sensor arms 37a and 37b are raised, a pulse signal is transmitted by a rotary encoder (not shown) and used as a feedback signal for a servo mechanism that is a Z-direction drive device. A position signal indicating the position is transmitted to the control unit 55. The controller 55 can detect the movement positions of the sensor arms 37a and 37b when receiving the L level signal based on the number of pulse signals from the initial position.
[0030]
14 (a), 14 (b), 14 (c) and 15 (a), 15 (b) show output signals obtained from the light receiving element 51 when the sensor arms 37a, 37b are moved from bottom to top. (Processed wafer mapping data D). In these figures, the level of the signal obtained from the light receiving element 51 is taken as the vertical axis, and the movement position of both sensor arms 37a, 37b detected by the number of pulse signals from the rotary encoder from the initial position is taken as the horizontal axis.
[0031]
As shown in FIG. 9, a state in which the wafers W1 to W25 are normally accommodated in the carrier C, that is, each of the wafers W1 to W25 has an actual thickness (actual thickness) RB, and is between the wafers W1 to W25. An output signal (processed wafer mapping data D) obtained from the light receiving element 51 when the sensor arms 37a and 37b are moved from the bottom to the top with the gap having an actual pitch (actual pitch) RP is shown in FIG. As shown in FIG. 14 (a), the L level and the H level are regularly output alternately. That is, the length at which the H level is continuously output is detected as the reference pitch MP0, and the length at which the L level is continuously output is detected as the reference thickness MB0. Further, the reference measurement center position MT0 in the height direction (Z direction) of the wafer W is detected from the center position of the length in which the L level is continuously output. Further, the output signal (reference mapping data D0) serving as the reference of the output signal is such that the reference thickness MB0, the reference pitch MP0, and the reference measurement center position MT0 are detected.
[0032]
As shown in FIG. 10, the sensor arms 37a and 37b are lowered in a state where a cross slot wafer WX that is held diagonally across two slots is formed in the wafers W1 to W25 in the carrier C. As shown in FIG. 14B, the output signal (processed wafer mapping data D) obtained from the light receiving element 51 when moving from the top to the bottom is continuous at the place where the cross slot wafer WX is generated. The output L level is longer than the normal state and is detected as a measured thickness MBX longer than the reference thickness MB0.
[0033]
As shown in FIG. 11, the sensor arms 37a and 37b are moved from the bottom to the top in a state where the slot SN that does not hold the wafer W exists in the slots S1 to S25 of the carrier C. Sometimes, the output signal (processed wafer mapping data D) obtained from the light receiving element 51 is in a normal state where the H level continuously output is normal at the location where the slot SN exists, as shown in FIG. It becomes longer and is detected as a measurement pitch MPN longer than the reference pitch MP0.
[0034]
As shown in FIG. 12, for example, there is a foreign matter M such as fine particles on the upper surface 11 of the mounting table 10, and the carrier C is placed on the foreign matter M so that the wafers W1 to W25 are inclined from the horizontal. When held, the output signal (processed wafer mapping data D) obtained from the light receiving element 51 when the sensor arms 37a and 37b are moved from the bottom to the top, as shown in FIG. The L level and the H level are regularly output alternately. However, the measurement center position MTM is detected as being shifted to a higher position than the reference measurement center position MT0 detected from the continuously output L level in the reference mapping data D0. The deviation between the reference measurement center position MT0 and the measurement center position MTM increases as the measurement center position MT becomes higher. The L level and the H level that are continuously output are slightly longer than the normal state, and are detected as a measurement thickness MBM longer than the reference thickness MB0 and a measurement pitch MPM slightly longer than the reference pitch MP0, respectively. The control unit 55 stores in advance a reference output signal (reference mapping data D0). By comparing the reference output signal with the transmitted output signal (processed wafer mapping data D), the carrier C is It is possible to detect the state of being placed tilted.
[0035]
As shown in FIG. 13, for example, the carrier C is deformed by being used for a long period of time, and the carrier C is distorted. Therefore, the wafer WF is tilted from the horizontal and is in a drooping state, and the wafers WF to W25 are also horizontal. When the sensor arms 37a and 37b are held while being tilted and tilted forward, the output signal (processed wafer mapping data D) obtained from the light receiving element 51 when the sensor arms 37a and 37b are moved from the bottom to the top is obtained from the wafer W1. As shown in FIG. 15B, the L level and the H level are regularly output alternately at the wafer WF ′ immediately below the wafer WF and at the place where the wafer WF moves along the wafer W25. However, the measurement center position MTF of the wafer WF is detected as being shifted to a lower position from the L level reference measurement center position MT0 output continuously in the reference mapping data D0. Further, the continuously output L level and H level are more varied than in the normal state, and a distorted portion is detected as a measurement pitch MPF shorter than the reference pitch MP0. Note that the entire carrier C may be distorted, and the wafers W1 to W25 may be held in a forward-hanging state inclined from the horizontal. In this case, the deviation between the reference measurement center position MT0 and the measurement center position MTM is detected so as to increase as the measurement center position MT becomes higher. The control unit 55 stores in advance a reference output signal (reference mapping data D0). By comparing the reference output signal with the transmitted output signal (processed wafer mapping data D), the carrier C is A deformed state can be detected. That is, when it is detected that the measurement center positions MTF to MT25 of the wafers WF to W25 are shifted to a low position with respect to the reference measurement center position MT0, it is recognized that the carrier C is deformed. Further, it is detected that the measurement center positions MTF to MT25 of the wafers WF to W25 are shifted to a low position with respect to the reference measurement center position MT0 and that the measurement pitch MPF shorter than the reference pitch MP0 exists, and the carrier It can also be recognized that C is deformed.
[0036]
As described above, the sensor arms 37a and 37b can be moved up and down in the Z direction by the rotational drive of a servo motor of a servo mechanism (not shown). If the Z direction drive mechanism is defective, an output signal (processing wafer) In the mapping data D), the L level and the H level are not regularly output alternately and may become irregular. For example, when an element that transmits a pulse signal in the servo mechanism is a defective product, the L level in the processed wafer mapping data D may be detected more than the normal state. When the measured thickness MB is detected more than the normal state in this way, it can be seen as if many wafers are accommodated. Further, for example, when vibration occurs during movement in the Z direction, the position of the wafer W may be erroneously recognized. However, even in such a case, it can be detected that there is a defect in the Z-direction drive mechanism of the sensor arms 37a and 37b by comparing with the reference mapping data D0.
[0037]
As shown in FIGS. 1 and 2, the cleaning processing unit 2 includes a main wafer transfer device 65, two wafer transfer units 67, 68, four substrate cleaning units 70, 71, 72, 73, and a wafer. Three heating units for heating and drying W and a heating / cooling unit 75 including a cooling unit for cooling the heated wafer W are provided. The main wafer transfer device 65 is disposed so as to be accessible to all of the wafer transfer units 67 and 68, the substrate cleaning units 70, 71, 72, and 73, the heating unit of the heating / cooling unit 75, and the cooling unit. The wafer delivery units 67 and 68 temporarily place the wafer W in order to deliver the wafer W to and from the wafer transfer unit 5.
[0038]
The main wafer transfer device 65 includes a cylindrical support 76 that can be rotated by a rotational driving force of a motor (not shown), and a wafer transfer body 77 that can be moved up and down in the Z direction along the inside of the cylindrical support 30. Have. The wafer transfer body 77 is integrally rotated with the rotation of the cylindrical support 76, and is provided with three transfer arms 78a arranged in multiple stages that can move forward and backward independently. , 78b, 78c.
[0039]
The wafer delivery units 67 and 68 are stacked in two upper and lower stages. For example, the lower wafer delivery unit 67 places a wafer W to be transferred from the in / out port 4 side to the cleaning processing unit 3 side. Therefore, the upper wafer transfer unit 68 can be used to place the wafer W to be transferred from the cleaning processing unit 3 side to the in / out port 4 side.
[0040]
The cleaning processing unit 2 includes an electrical unit 80 that is a power source for operating the entire cleaning processing system 1, various devices provided in the cleaning processing system 1, and a machine that controls the operation of the entire cleaning processing system 1. A control unit 81 and a chemical solution storage unit 82 for storing a predetermined cleaning solution to be sent to the substrate cleaning units 70, 71, 72, 73 are disposed. The electrical unit 80 is connected to a main power source (not shown). A fan filter unit (FFU) 83 for downflowing clean air is disposed on each unit and the main wafer transfer device 65 on the ceiling portion of the cleaning processing unit 2.
[0041]
By installing the electrical unit 80, the machine control unit 81, and the chemical storage unit 82 outside the cleaning processing unit 2 or by pulling them out, the wafer transfer units 67 and 68, main wafer transfer from this surface (Y direction) Maintenance of the device 65 and the heating / cooling unit 75 can be easily performed.
[0042]
As shown in FIG. 2, the substrate cleaning units 70, 71, 72, 73 are arranged in two stages, two at the top and two at each stage. As shown in FIG. 1, the substrate cleaning units 70 and 71 and the substrate cleaning units 72 and 73 have a symmetric structure with respect to the wall surface 85 forming the boundary, except that they are symmetric. For example, the substrate cleaning units 70, 71, 72, 73 have substantially the same configuration.
[0043]
Next, a setting process of the carry-in / out section 3 in the cleaning processing system 1 will be described. This setting process includes an adjustment process for various members provided in the carry-in / out unit 3 and a calibration process for the wafer transfer device 25.
[0044]
In the adjustment process of various members, for example, an extraction storage arm parallelism adjustment process for adjusting the parallelism of the extraction storage arm 35 to a predetermined state, and a mounting table adjustment process for adjusting the upper surface 11 of the mounting table 10 to be a horizontal plane. Then, the reference carrier C0 is placed on a surface plate, the dimensions of each part are measured, and a reference carrier reliability confirmation step for confirming the reliability as the reference carrier is performed. Here, the reference carrier C0 is a carrier having a standard shape of the carrier C used in the cleaning system 1, and has the same shape as the carrier C shown in FIG. Further, a reference wafer W whose reliability as a reference wafer is confirmed can be accommodated in the reference carrier C0 and can be used as a reference for adjusting the operation of the wafer transfer device 25. When the specifications of the carrier used in the cleaning processing system 1 are changed, for example, when the pitch of the reference wafer W is changed by using a carrier having a shape different from the carrier C shown in FIG. Whenever the thickness is changed, a reference carrier reliability confirmation step and a calibration step of the wafer transfer device 25 are performed each time.
[0045]
In the calibration process of the wafer transfer device 25 after the adjustment process of various members, a mapping start position setting process and a reference mapping process for detecting mapping data for the reference wafers W01 to W025 stored in the reference carrier C0. Is done.
[0046]
In the calibration step, first, the mapping start position by the sensor arms 37a and 37b is set and stored in a controller (not shown) that controls the wafer transfer device 25. The mapping start position is set to a predetermined position lower than the lowermost slot S1 by a predetermined distance. In mapping, the sensor arms 37a and 37b are moved upward from the mapping start position.
[0047]
Next, a reference mapping process is performed. In this reference mapping step, a reference mapping data detection step for detecting the reference mapping data D0, and a reference data calculation step for calculating reference data such as the reference thickness MB0, the reference pitch MP0, and the reference measurement center position MT0 from the reference mapping data D0. Then, a storing step for storing the reference data in the control unit 55 is performed. The controller 55 stores preset tolerances for the measurement thickness MB, the measurement pitch MP, and the measurement center position MT. The allowable error of the measurement center position MT is set for the difference between each reference measurement center position MT01 to MT025 and each measurement center position MT1 to MT25.
[0048]
First, the reference wafers W01 to W025 are stored in the reference slots S01 to S025 of the reference carrier C0 whose reliability has been confirmed. Then, the reference carrier C0 is placed at a predetermined position on the upper surface 11 of the placing table 10.
[0049]
In the reference mapping data detection step, the reference mapping data D0 of the reference wafers W01 to W025 accommodated in the reference slots S01 to S025 of the reference carrier C0 are detected by both sensor arms 37a and 37b of the wafer transfer device 25. First, the wafer transfer device 25 moves to the front of the reference carrier C0 and adjusts the position of both sensor arms 37a and 37b to the mapping start position. Then, as shown in FIG. Thus, both sensor arms 37a and 37b are advanced into the carrier C until a part of each of the wafers W01 to W025 can pass. Next, while causing the light emitting element 50 to emit light, a servo mechanism (not shown) is operated to move both sensor arms 37a and 37b upward to a predetermined height position above the uppermost slot S025. In this way, the reference wafers W01 to W025 accommodated in the carrier C0 are mapped, and the reference mapping data D0 having thickness and pitch information is detected. The reference mapping data D0 is stored by the control unit 55.
[0050]
Thereafter, a reference data calculation process for the reference wafers W01 to W025 accommodated in the reference carrier C0 is performed. In this step, reference data is detected based on the reference mapping data D0. That is, the reference thickness MB01 to MB025 of each reference wafer W01 to W025 and the reference measurement center positions MT01 to MT025 in the height direction are calculated from the position information when the L level in the reference mapping data D0 is detected. Further, reference pitches MP02 to MP025 between the reference wafers W01 to W025 are calculated from position information when the H level in the reference mapping data D0 is detected. Here, the reference thicknesses MB01 to MB025 are obtained by measuring the thicknesses of the wafers W01 to W025, respectively. The reference pitches MP02 to MP025 are the lower surfaces of the wafers W02 to W025 and the wafers W01 held below the respective wafers. The distance between the upper surface of ˜W024 is measured. Since there is no wafer below the wafer W01 held at the lowermost stage, there is no reference pitch MP01. The reference measurement center positions MT01 to MT025 are obtained by measuring the center positions in the height direction of the wafers W01 to W025, respectively. Further, from the calculated reference thicknesses MB01 to MB025 of the reference wafers W01 to W025, the reference pitches MP02 to MP025, and the reference measurement center positions MT01 to MT025, various positions with respect to the take-out storage arm 35 are changed to the reference wafers W01 to W025. Is calculated. That is, a standby position where the take-out and storage arm 35 stands by on the base 30, a lower entry / exit position where it moves horizontally with respect to the lower back position, a lower back position facing the lower surface of the wafer W on the back side in the carrier C, An upper back position that rises from the lower back position and supports the wafer W, and an upper entry / exit position that moves horizontally with respect to the upper back position are calculated for each of the reference wafers W01 to W025. Further, an allowable error of the measurement center position MT with reference to the mapping start position is calculated from each of the reference measurement center positions MT01 to MT025 and a preset allowable error of the measurement center position MT. Note that all the calculated values in the reference data calculation step are calculated based on the mapping start position.
[0051]
Next, a storage step of storing the reference data detected by calculating from the reference mapping data D0 in the reference data calculation step in the control unit 55 is performed. That is, the reference thicknesses MB01 to MB025, the reference pitches MP02 to MP025, the reference measurement center positions MT01 to MT025, the standby position calculated for each of the reference wafers W01 to W025, the lower entry / exit position, the lower back position, the upper The back position and the upper entry / exit position are stored in the control unit 55.
[0052]
Note that the reference thicknesses MB01 to MB025 and the reference pitches MP02 to MP025 are not calculated from the reference mapping data D0, and the reference thicknesses MB01 to MB025 are determined from the thickness and pitch determined by the shape of the carrier C used in the processing system 1. , And may be detected by determining each reference pitch MP02 to MP025. In this case, the reference data calculated from the reference mapping data D0 in the reference data calculation step are the reference measurement center positions MT01 to MT025, the standby position calculated for each reference wafer W01 to W025, the lower entry / exit position, the lower back position, and the upper The back position and the upper entry / exit position. The reference data stored in the storing step is the reference data detected by calculating from the reference thicknesses MB01 to MB025, the reference pitches MP02 to MP025 and the reference mapping data D0, which are reference data determined by the shape of the carrier C. The reference measurement center positions MT01 to MT025 are the standby position, the lower entry / exit position, the lower back position, the upper back position, and the upper entry / exit position.
[0053]
Reference thicknesses MB01 to MB025 and reference pitches MP02 to MP025 determined or detected in the reference mapping step are compared with measurement thicknesses MB1 to MB25 and measurement pitches MP2 to MP25 calculated in the processing wafer mapping step described later. The tolerances of the measurement thickness MB and the measurement pitch MP, which are calculation data from the processing wafer mapping data D for each of the wafers W1 to W25 in the carrier C, are, for example, the measurement thickness MB is 1 mm or less and the measurement pitch MP is 5 mm or more. It is preset as an allowable value and stored in the control unit 55.
[0054]
On the other hand, the reference measurement center positions MT01 to MT025 detected in the reference mapping process are compared with the measurement center positions MT1 to MT25 calculated in the processing wafer mapping process. The tolerance of the measurement center position MT, which is calculation data from the processing wafer mapping data D for each of the wafers W1 to W25 in the carrier C, is the reference measurement center position MT0, which is calculation data from the measurement center position MT and the reference mapping data D0. Is set for the difference between Further, as described above, the deviation between the reference measurement center position MT0 and the measurement center position MTM increases as the measurement center position MT becomes higher. Therefore, the allowable error of the measurement center position MT is the lowest level in the carrier C. The measurement center position MT1 of the wafer W1 held by the slot S1 is set to be the narrowest, and the wafers W2 to W25 held by the slots S2 to S25 are set wider than the measurement center position MT1 set for the wafer W1. To do. For example, for the measurement center position MT1 of the lowermost wafer W1, the difference between the wafer W1 and the reference wafer W01 is ± 0.5 mm or less, and for the measurement center positions MT2 to MT25 of the wafers W2 to W25, The difference from each of the reference wafers W02 to W025 is ± 1 mm or less. For example, if the wafer W1 is not held in the lowermost slot S1, an allowable error is set from the wafer W2 held in the slot S2. For example, the tolerance is set the narrowest for the measurement center position MT2 of the wafer W2, and the wafers W3 to W25 held by the slots S3 to S25 are set wider than the measurement center position MT2. It should be noted that the allowable error may be set in order from the lowermost wafer W1 to the uppermost wafer W25. For example, the difference between the measurement center position MT1 of the wafer W1 and the reference measurement center position MT01 of the reference wafer W01 is ± 0.5 mm or less, and the measurement center positions MT2 to MT24 of the wafers W2 to W24 and the reference wafers W02 to W024 The allowable error between the reference measurement center positions MT02 to MT024 is set so as to increase sequentially between ± 0.5 to ± 0.94 mm, and the measurement center position MT25 of the wafer W25 and the reference measurement center position MT025 of the reference wafer W025 are set. Is set to be ± 0.95 mm or less.
[0055]
The standby position, lower entry / exit position, lower back position, upper back position, and upper entry / exit position detected for each of the reference wafers W01 to W025 in the reference mapping step stores the processed wafer W in the carrier C. Used when.
[0056]
Next, a process of cleaning the wafer W by the cleaning processing system 1 will be described. First, a carrier C storing, for example, 25 wafers W that have not yet been processed is transported to the cleaning processing system 1 that has completed the setting process by a transport robot (not shown), and provided in the in / out port 4. It is mounted on the mounting table 10.
[0057]
In a state where the carrier C is placed at a predetermined position on the placing table 10, the wafer take-out / accommodating port 15 of the carrier C faces the window 20 formed in the boundary wall 17. The wafers W1 to W25 in the carrier C are held substantially horizontally at a predetermined actual pitch RP as shown in FIG. 9 by the slots S1 to S25. Further, the wafers W1 to W25 are held in a state where the surface is the upper surface.
[0058]
Then, the window opening / closing mechanism 21 opens the lid provided on the carrier C so that the wafer take-out / storing port 15 of the carrier C communicates with the wafer transfer unit 5. First, a processing wafer mapping process for detecting the processing wafer mapping data D for the wafers W1 to W25 in the carrier C is performed. A process wafer mapping data detection process for detecting the process wafer mapping data D and a process wafer data calculation process for calculating data such as the measurement thickness MB, the measurement pitch MP, and the measurement center position MT from the process wafer mapping data D are performed.
[0059]
In the process wafer mapping data detection step, first, the wafer transfer device 25 moves to the front of the carrier C, and after adjusting both sensor arms 37a and 37b to the mapping start position, as shown in FIG. Both sensor arms 37a and 37b are advanced into the carrier C until a part of each of the wafers W1 to W25 can pass between the arms 37a and 37b. Next, while causing the light emitting element 50 to emit light, a servo mechanism (not shown) is operated to move both sensor arms 37a and 37b upward to a predetermined height position above the uppermost slot S25. In this way, the wafers W1 to W25 accommodated in the carrier C are mapped, and the processing wafer mapping data D having thickness and pitch information is detected. The processed wafer mapping data D is transmitted to the control unit 55.
[0060]
Next, a process wafer data calculation step is performed. In the control unit 55, the measured thickness MB1 to MB25 of each wafer W1 to W25, the measurement pitch MP2 to MP25, and the measurement center position MT1 to MT25 in the height direction are determined from the processing wafer mapping data D related to each wafer W1 to W25 in the carrier C. Is calculated. Here, the measured thicknesses MB1 to MB25 are obtained by measuring the thicknesses of the wafers W1 to W25, respectively. The measured pitches MP2 to MP25 are the lower surfaces of the wafers W2 to W25 and the wafers W1 held below the respective wafers. The distance between the upper surface of ˜W24 is measured. Note that there is no wafer below the wafer W1 held at the lowermost stage, so there is no measurement pitch MP2. The measurement center positions MT1 to MT25 are center positions in the height direction of the wafers W2 to W25.
[0061]
Subsequently, the controller 55 compares the processing wafer mapping calculation data with the reference mapping calculation data stored in the calibration step, and a comparison determination step for determining whether to take out the wafers W1 to W25 according to the comparison result. Done. First, an error between the measured thickness MB1 to MB25 and the reference thickness MB01 to MB025 is obtained from the calculated data of the processed wafer mapping and the calculated data of the reference mapping, and this error is an allowable error of the thickness set in advance for each of the wafers W1 to W25. Confirm that it is within the range. On the other hand, an error between the measured pitches MP2 to MP25 and the reference pitches MP02 to MP025 is obtained from the calculation data of the processing wafer mapping and the calculation data of the reference mapping, and this error is an allowable error of a preset pitch for each of the wafers W1 to W25. Confirm that it is within the range.
[0062]
Here, for example, when a measured thickness MB that is not within the allowable error range, such as the measured thickness MBX shown in FIG. 14B, is detected, the wafers W1 to W25 in the carrier C as shown in FIG. In which a cross-slot wafer WX that is held obliquely across two slots is formed, or in which two or more wafers W are contained in one slot, or a wafer that is thicker than the standard It is recognized that W is erroneously accommodated. Then, an alarm is given to the operator. Further, for example, when a measurement pitch MP that is not within the allowable error range is detected, such as the measurement pitch MPN shown in FIG. 14C, as shown in FIG. In addition, it is recognized that there is a slot SN that does not hold the wafer W.
[0063]
Further, errors between the measurement center positions MT1 to MT25 in the height direction and the reference measurement center positions MT01 to MT025 are obtained from the calculation data of the processing wafer mapping and the reference mapping, and this error is the center of each wafer W1 to W25. Confirm that it is within the tolerance range calculated for the position. Here, for example, as in the processing wafer mapping data D shown in FIG. 15A, the measurement center position MT is shifted to a higher position than the reference mapping data D0, and the measurement center position MT not within the allowable error range is detected. In such a case, as shown in FIG. 12, it is recognized that the carrier C is inclined and placed in the slots S1 to S25 of the carrier C. Then, an alarm is given to the operator.
[0064]
When the measurement center position MT is shifted to a lower position than the reference mapping data D0 as in the processing wafer mapping data D shown in FIG. 15B, the carrier C is distorted as shown in FIG. Is recognized as the cause. When the measurement center position MT is outside the allowable error range, an alarm is given to the operator. Thus, when the measurement center position MT is shifted to a lower position than the reference mapping data D0, it is recognized that the carrier C is distorted. Alternatively, as shown in FIG. 15B, when the measurement center position MT is shifted to a lower position than the reference mapping data D0 and the measurement pitch MPF shorter than the reference mapping data D0 exists, the carrier C is distorted. It may be recognized that this has occurred.
[0065]
As a result of the comparison as described above, when an abnormality in the accommodation state of the wafer W is recognized, an instruction to stop the operation or an instruction to perform the processing wafer mapping process again is waited. Can not receive. That is, the removal of the wafer W cannot be continued and the removal is stopped. Therefore, the operator who has received the warning checks the accommodation state of the carrier C and the wafer W in the slots S1 to S25, for example, visually, and if there is an abnormality, performs an action according to the cause. Further, the processing wafer mapping step may be performed again. In this case, the reliability of the data can be improved by reconfirming the processed wafer mapping data.
[0066]
In a state where the cross slot wafer WX is generated, the unprocessed wafer W is taken out from the other normal slots S except for the two-stage slots S over which the cross slot wafer WX extends. Like that. In addition, even in a state where there is a slot SN that does not hold the wafer W, it may be instructed to take out an unprocessed wafer W from another normal slot S that is similarly housed.
[0067]
Further, in the state where the carrier C is placed at an inclination, there is a possibility that foreign matter is attached on the placement table 10, so it is necessary to check the state of the placement table 10. Then, the carrier C is normally placed. Alternatively, the wafer W is taken out from another carrier C that is normally placed.
[0068]
When the carrier C is distorted, it is necessary to stop using the carrier C and replace it with a new carrier C. Therefore, the carrier C is excluded to the outside, and the unprocessed wafer W in the new carrier C is taken out.
[0069]
If the number of wafers W is larger than the number of reference wafers W0 recognized in the reference mapping step, there is a high possibility that the cause is a malfunction or failure of the Z-direction drive mechanism of the sensor arms 37a and 37b. After visually confirming the state of each of the wafers W1 to W25, the state of the Z-direction drive mechanism is confirmed to detect a defect.
[0070]
When it is confirmed that the error is within the allowable error ranges of the measurement thickness MB, the measurement pitch MP, and the measurement center position MT set in advance for each of the wafers W1 to W25, the control unit 55 determines each error in the carrier C. From the processing wafer mapping data D relating to the wafers W1 to W25, the standby position, the lower entry / exit position, the lower back position, the upper back position, the upper entrance / exit position, and the upper standby position of the take-out storage arm 35 with respect to the wafer W are calculated. Thereafter, the wafer W is taken out. When taking out the wafer W from the carrier C, the take-out and storage arm 35 is operated in the order of the standby position, the lower entry / exit position, the lower back position, the upper back position, the upper entry / exit position, and the upper standby position. Thus, the wafers W are taken out one by one by the take-out storage arm 35 of the wafer transfer device 25.
[0071]
As described above, even if the measurement thicknesses MB1 to MB25 and the measurement pitches MP2 to MP25 are alternately detected at regular intervals in the process wafer mapping process, the process wafer mapping data D and the reference mapping data are compared in the comparison determination process. Comparing D0, it is possible to detect a state in which each of the wafers W1 to W25 is tilted and held. As a result, for example, it is possible to detect a state where the carrier C itself is tilted and a state where the carrier C is distorted. In such a case, the removal of the wafers W1 to W25 is stopped, so that it is possible to prevent abnormal holding of the wafers W1 to W25 by the takeout / accommodating arm 35.
[0072]
When the take-out storage arm 35 supports the wafer W taken out at the standby position of the base 30, the wafer W is carried out to the wafer transfer unit 5. Thereafter, the base 30 of the wafer transfer device 25 is rotated 180 degrees (°) in FIG. 1, and the entire wafer transfer device 25 is slid in the Y direction. By the movement of the wafer transfer device 25, the wafer W is transferred to the wafer transfer units 67 and 68 side of the cleaning processing unit 3. Then, the base 30 of the wafer transfer device 25 is slid in the Z direction in FIG. 1 to adjust the take-out storage arm 35 and the wafer W to a height that can be inserted into, for example, the lower wafer transfer unit 67. Thereafter, the wafer W is placed on the wafer delivery unit 67 by the movement (slide) of the take-out storage arm 35.
[0073]
Next, the main wafer transfer device 65 receives, for example, the wafer W placed on the wafer transfer unit 67 by the transfer arm 78a, and appropriately transfers it to each substrate cleaning unit 70, 71, 72, 73. Thus, the wafer W is cleaned in each of the substrate cleaning units 70, 71, 72, 73. When the predetermined cleaning process is completed, the wafer W is appropriately unloaded from the substrate cleaning units 70, 71, 72, 73 by the transfer arm 78 b of the main wafer transfer device 65 and placed on the upper wafer transfer unit 68. Subsequently, the take-out storage arm 35 of the wafer transfer device 25 slides to receive the wafer W placed on the wafer delivery unit 68.
[0074]
When the wafer W is stored in the carrier C, the extraction / storage arm 35 is operated in the order of the upper standby position, the upper input / output position, the upper back position, the lower back position, and the lower input / output position standby position, and the wafer W is held by the slot S. Is done. In the case where the wafer W is stored, the carrier C in which the wafer W before the cleaning process is stored and the carrier C in which the wafer W after the cleaning process is stored are the same. The take-out and storage arm 35 is operated according to various pieces of position information calculated based on the processing wafer mapping data D. When the carrier C in which the wafer W before the cleaning process is accommodated is different from the carrier C in which the wafer W after the cleaning process is accommodated, based on the reference mapping data D0. The take-out and storage arm 35 is operated according to the calculated various position information. In this case, throughput can be improved. Further, mapping may be performed again in the wafer W storing step to detect the upper standby position, the upper entry / exit position, the upper rear position, the lower rear position, and the lower entry / exit position standby position. In this case, for example, when the wafer W is accommodated above and below the slot S that accommodates the wafer W, it is possible to reliably prevent an abnormality in holding the wafer by the take-out / accommodating arm 35. In this way, the wafer W that has been subjected to the cleaning process is stored in the carrier C again.
[0075]
In this method of taking out the wafer W, it is possible to detect a state in which the cross slot wafer WX is generated and a state in which there is a slot SN that does not hold the wafer W. Furthermore, by having a comparison judgment step between the reference mapping data D0 and the processed wafer mapping data D, it is possible to detect the state where the carrier C is placed at an inclination. Further, it is possible to detect a defect in the Z-direction drive mechanism of the sensor arms 37a and 37b, such as a servo mechanism. Furthermore, it is possible to detect the replacement time of the deformed carrier C. Accordingly, it is possible to prevent abnormal holding of the wafers W1 to W25 by the take-out and storage arm 35.
[0076]
Although an example of a preferred embodiment of the present invention has been described above, the present invention is not limited to the embodiment described above, and can be appropriately modified. For example, the present invention can be applied to the case where the take-out storage arm 35 is fixed and the carrier C side is moved. The substrate of the present invention is not limited to a semiconductor wafer, but may be other LCD substrate glass, a CD substrate, a printed substrate, a ceramic substrate, or the like. Further, the present invention can be applied to all processing systems having a carrier for housing a substrate, and can be applied to a processing system incorporating a resist coating apparatus such as a semiconductor wafer, a CVD apparatus, a sputtering apparatus, and the like.
[0077]
【The invention's effect】
According to the present invention, it is possible to detect a state where the carrier is tilted. It is possible to detect a defect in the substrate detection means. In addition, it is possible to detect the replacement time of the deformed carrier. Accordingly, it is possible to prevent abnormal holding of the substrate by the take-out storage arm.
[Brief description of the drawings]
FIG. 1 is a plan view of a cleaning processing system.
FIG. 2 is a side view of a cleaning processing system.
FIG. 3 is a perspective view of a carrier containing a wafer.
FIG. 4 is a plan view showing a configuration of a take-out storage arm.
FIG. 5 is a front view showing a configuration of a take-out storage arm.
FIG. 6 is a side view showing the configuration and operation of the take-out storage arm.
FIG. 7 is an explanatory diagram showing the position of a wafer and a take-out storage arm in a carrier.
FIG. 8 is a schematic cross-sectional view for explaining a mapping operation.
FIG. 9 is a schematic longitudinal sectional view showing a state where the wafer is normally held in the slot.
FIG. 10 is a schematic longitudinal sectional view showing a state in which a cross slot is generated.
FIG. 11 is a schematic longitudinal sectional view showing a state in which there is a slot not holding a wafer.
FIG. 12 is a schematic longitudinal sectional view showing a state where the carrier is inclined and placed.
FIG. 13 is a schematic longitudinal sectional view showing a state in which a wafer is held by a deformed carrier.
FIG. 14 is an explanatory diagram showing mapping data.
FIG. 15 is an explanatory diagram for explaining a difference between reference mapping data and abnormal mapping data caused by a carrier state;
[Explanation of symbols]
C career
C0 standard carrier
D Processed wafer mapping data
D0 reference mapping data
MB measurement thickness
MB0 standard thickness
MP measurement pitch
MP0 standard pitch
MT measurement center position
MT0 reference measurement center position
RB actual thickness
RP actual pitch
S, S1-S25 slots
S01-S025 reference slot
W, W1-W25 wafer
W01-W025 Reference wafer
1 Cleaning system
3 carry-in / out section
4 in / out port
5 Wafer transfer part
10 Mounting table
11 Upper surface
15 Wafer take-out storage port
17 Boundary wall
25 Wafer transfer device
35 Take-out storage arm
37a, 37b Sensor arm
50 Light emitting elements
51 Light receiving element
55 Control unit
65 Main wafer transfer device
67, 68 Wafer delivery unit
70, 71, 72, 73 Substrate cleaning unit

Claims (5)

A method of holding a plurality of substrates in a multi-stage by a carrier having a plurality of slots for horizontally holding the substrate and taking out the substrate from the carrier,
A reference mapping step for determining or detecting the thickness and pitch of each reference board housed in each reference slot provided in the reference carrier and detecting the position;
A target substrate mapping step for detecting the thickness, pitch and position of each target substrate stored in each slot provided in the carrier;
The thickness, pitch and position determined or detected in the reference mapping step are compared with the thickness, pitch and position detected in the substrate mapping process, and a determination is made to take out the substrate in accordance with the comparison result. have a comparison and determination step of performing,
In the comparison and determination step, an error between the thickness, pitch and position detected or detected in the reference mapping step and the thickness, pitch and position detected in the substrate mapping process is detected.
If the error is within the allowable error range, perform retrieval;
When the position detected in the substrate mapping process is outside the allowable error range and is higher than the position detected in the reference mapping process, the removal is stopped and the carrier is tilted. A method for removing a substrate, characterized by detecting a state. A method of holding a plurality of substrates in a multi-stage by a carrier having a plurality of slots for horizontally holding the substrate and taking out the substrate from the carrier,
  A reference mapping step for determining or detecting the thickness and pitch of each reference board housed in each reference slot provided in the reference carrier and detecting the position;
  A target substrate mapping step for detecting the thickness, pitch and position of each target substrate stored in each slot provided in the carrier;
  The thickness, pitch and position determined or detected in the reference mapping step are compared with the thickness, pitch and position detected in the substrate mapping process, and a determination is made to take out the substrate in accordance with the comparison result. A comparison judgment process to be performed,
  In the comparison and determination step, an error between the thickness, pitch and position detected or detected in the reference mapping step and the thickness, pitch and position detected in the substrate mapping process is detected.
  If the error is within the allowable error range, perform retrieval;
  When the position detected in the substrate mapping process is outside the allowable error range and is lower than the position detected in the reference mapping process, the removal is stopped and the carrier containing the substrate to be processed is removed. A method for removing a substrate, characterized in that the substrate is replaced. A method of holding a plurality of substrates in a multi-stage by a carrier having a plurality of slots for horizontally holding the substrate and taking out the substrate from the carrier,
  A reference mapping step for determining or detecting the thickness and pitch of each reference board housed in each reference slot provided in the reference carrier and detecting the position;
  A target substrate mapping step for detecting the thickness, pitch and position of each target substrate stored in each slot provided in the carrier;
  The thickness, pitch and position determined or detected in the reference mapping step are compared with the thickness, pitch and position detected in the substrate mapping process, and a determination is made to take out the substrate in accordance with the comparison result. A comparison judgment process to be performed,
  In the comparison and determination step, an error between the thickness, pitch and position detected or detected in the reference mapping step and the thickness, pitch and position detected in the substrate mapping process is detected.
  If the error is within the allowable error range, perform retrieval;
  If the pitch and position detected in the substrate mapping process are outside the range of each allowable error and are lower than the positions detected in the reference mapping process, A method for removing a substrate, characterized in that the removal is stopped and the carrier containing the substrate to be processed is replaced. When the number of target substrates detected in the target substrate mapping step is larger than the number of reference substrates detected in the reference mapping step, the removal is stopped and a defect of the substrate detecting means is detected. The method for removing a substrate according to any one of claims 1 to 3. A method of holding a plurality of substrates in a multi-stage by a carrier having a plurality of slots for horizontally holding the substrate and taking out the substrate from the carrier,
  A reference mapping step for determining or detecting the thickness and pitch of each reference board housed in each reference slot provided in the reference carrier and detecting the position;
  A target substrate mapping step for detecting the thickness, pitch and position of each target substrate stored in each slot provided in the carrier;
  The thickness, pitch and position determined or detected in the reference mapping step are compared with the thickness, pitch and position detected in the substrate mapping process, and a determination is made to take out the substrate in accordance with the comparison result. A comparison judgment process to be performed,
  In the comparison and determination step, an error between the thickness, pitch and position detected or detected in the reference mapping step and the thickness, pitch and position detected in the substrate mapping process is detected.
  If the error is within the allowable error range, perform retrieval;
  When the number of target substrates detected in the target substrate mapping step is larger than the number of reference substrates detected in the reference mapping step, the removal is stopped and a defect of the substrate detecting means is detected. How to take out the board.

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