JP3962448B2 - Double-sided simultaneous film formation method and apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for simultaneously forming a thin film by applying a CVD method (chemical vapor deposition method) on both surfaces of a spectacle lens.
[0002]
[Prior art]
A protective film, an antireflection film, a water repellent film, and the like are formed on the surface of the plastic spectacle lens.
For example, the protective film is a film having a relatively large film thickness (for example, about 2 to 3 μm) rich in hardness for protecting the softness (easy to be damaged) of the plastic that is a material of the spectacle lens. In general, it has been formed by applying and curing a thermosetting resin or an ultraviolet curable resin by a dipping method. However, such a wet method has a problem in terms of workability.
Further, the antireflection film has been formed by forming a single layer or a multilayer antireflection film by a vacuum deposition method. However, in the vacuum deposition method, a thin film is first formed on one side, and then a thin film is formed again on the back side. As a general method, after a thin film is formed on one side, it is once taken out from the vacuum chamber, and the spectacle lens (substrate) is turned over and set again so that the film is formed on the back side, and film formation is performed again in the vacuum chamber. There are methods, but operations are complicated and productivity is poor. There is also known an apparatus in which a thin film is formed on one side of a spectacle lens, and then the spectacle lens is inverted in a vacuum chamber to vacuum deposit on both sides without breaking the vacuum atmosphere. However, this inversion deposition apparatus has a complicated inversion mechanism, leading to an increase in apparatus cost and a decrease in productivity.
[0003]
[Problems to be solved by the invention]
An object of the present invention is to efficiently form a thin film simultaneously on both surfaces of a spectacle lens. Further, the physical properties such as film thickness, refractive index, and hardness of the thin film formed on both surfaces of the spectacle lens are individually determined. The purpose is to control.
[0004]
[Means for Solving the Problems]
The double-sided simultaneous film-forming method of the present invention is a double-sided simultaneous film-forming method of simultaneously forming films on both sides of a spectacle lens, wherein the spectacle lens is mounted on a flat substrate holder and introduced into a vacuum processing chamber, and the substrate The holder is rotated in the horizontal direction, and on both sides of the spectacle lens, it is horizontal with respect to the substrate holder from a position that is symmetrical about the intersection of the rotation axis of the substrate holder and the horizontal plane of the substrate holder. The monomer gas and the reactive gas plasma are respectively supplied, and the monomer gas and the reactive gas in the plasma state are selected while individually forming thin film forming conditions on one surface side and the other surface side of the spectacle lens. A thin film made of this reaction product is formed simultaneously on both surfaces of the spectacle lens.
[0005]
The double-sided simultaneous film-forming apparatus of the present invention is a double-sided simultaneous film-forming apparatus that forms films on both sides of a spectacle lens simultaneously, and is a disc that is disposed in a vacuum processing chamber and that rotates in the horizontal direction with the spectacle lens mounted thereon. Substrate holder, a monomer gas supply member that supplies a monomer gas to the upper surface side of the substrate holder, an upper plasma source that supplies plasma of a reactive gas to the upper surface side of the substrate holder, and a lower surface side of the substrate holder A monomer gas supply member that supplies monomer gas, a lower plasma source that supplies plasma of a reactive gas to the lower surface side of the substrate holder, and means for individually selecting thin film formation conditions on the upper surface side and the lower surface side of the spectacle lens comprising the door, the upper plasma source and the lower plasma source was at the intersection to be symmetrical about the position of the horizontal plane of the rotary shaft and the substrate holder of the substrate holder And both are installed in the horizontal direction with respect to the substrate holder, and wherein a thin film made of the reaction product of the monomer gas and the plasma form of the reaction gas can be simultaneously formed on both surfaces of the spectacle lenses.
[0006]
In addition, it is preferable to use a plasma source having a radio frequency (RF) inductively coupled electrode as the plasma source, thereby reducing variations in the thickness of the thin film to be formed and the distribution of physical properties of the thin film. .
[0007]
【Example】
FIG. 1 is a longitudinal sectional view showing an embodiment of an apparatus used in the present invention, and FIG. 2 is a sectional view (plan view) taken along line AA in FIG. In the vacuum processing chamber 11, a substrate holder 21 on which a large number of spectacle lenses 23 are mounted is rotatably held by an upper support member 13 and a lower support member 15, and is driven by a motor built in the lower support member 15. The substrate holder 21 is rotated in the horizontal direction. Further, a shield plate 25 is provided near the lower portion of the substrate holder 21 so as not to hinder the rotation of the substrate holder 21 and to prevent the formation of a thin film on the spectacle lens 23 (substrate). The vacuum processing chamber 11 is vertically divided by the substrate holder 21 and the shield plate 25, and thin film formation conditions can be individually controlled in the upper and lower portions.
[0008]
An upper exhaust port 17 is opened on the upper surface side of the substrate holder 21, and the pressure atmosphere can be adjusted by a vacuum pump. On the other hand, the monomer gas is supplied from the upper reaction gas supply source 33 to the front surface of the upper plasma source 31 through the upper reaction gas supply pipe 35 and is exposed to plasma-like reaction gas (for example, oxygen O 2) from the plasma source 31. . Then, this reaction product is deposited on the spectacle lens 23 (substrate) mounted on the rotating substrate holder 21, and a thin film is formed on the spectacle lens 23. As the monomer gas, an organometallic compound such as a silicon compound, a tantalum compound, a zirconium compound, a titanium compound, or the like is used. For example, when tetraethoxysilane which is a silicon compound is used as the monomer gas and oxygen is used as the plasma-like reaction gas, silicon oxide is deposited on the spectacle lens 23. The reaction gas such as oxygen gas may be introduced from the same location as the monomer gas, or may be introduced from a separate location as in this embodiment.
[0009]
As the monomer gas, in addition to tetraethoxysilane, tetrachlorosilane, chloromethyltrichlorosilane, methyltrichlorosilane, methyldichlorosilane, vinyltrichlorosilane, 1,2-dichloroethyltrichlorosilane, 1-chloroethyltrichlorosilane, 2- Chloroethyltrichlorosilane, chloromethylmethyldichlorosilane, ethyltrichlorosilane, dimethyldichlorosilane, ethyldichlorosilane, dimethylchlorosilane, allyltrichlorosilane, methylvinyldichlorosilane, 3-chloropropyltrichlorosilane, dichloromethyldimethylchlorosilane, n-propyl Trichlorosilane, chloromethyldimethylchlorosilane, ethylmethyldichlorosilane, ethoxymethyldichlorosilane, trimethylchloro Run, dimethoxymethylchlorosilane, dimethoxymethylsilane, trimethoxysilane, divinyldichlorosilane, allylmethyldichlorosilane, dimethylvinylchlorosilane, n-butyltrichlorosilane, 3-chloropropylmethyldichlorosilane, isobutyltrichlorosilane, diethyldichlorosilane, dichloro Methyltrimethylsilane, methylpropyldichlorosilane, diethoxydichlorosilane, chloromethyltrimethylsilane, chloromethylmethoxydimethylsilane, chloromethyltrimethoxysilane, tetramethylsilane, diethylsilane, dimethylethoxysilane, hydroxymethyltrimethylsilane, methoxytrimethylsilane , Dimethoxydimethylsilane, methyltrimethoxysilane, tetramethoxysilane, Nyltrimethylsilane, diacetoxymethylsilane, chloromethyldimethylvinylsilane, allyldimethylchlorosilane, pentyltrichlorosilane, 1,1-dimethyl-1-silaneclobutane, allyldimethylsilane, trimethylvinylsilane, 3-chloropropyldimethylchlorosilane, butylmethyl Dichlorosilane, 2-chloroethoxychloromethyldimethylsilane, bis (2-chloroethoxy) methylsilane, trimethylvinyloxysilane, methoxydimethylvinylsilane, acetoxytrimethylsilane, trimethoxyvinylsilane, dimethylpropylchlorosilane, 1-chloroethyltrimethylsilane, dimethyl Isopropylchlorosilane, 2-chloroethoxytrimethylsilane, chloromethyldimethylethoxysilane, diethyl Methylsilane, ethyltrimethylsilane, ethoxytrimethylsilane, diethoxymethylsilane, ethyltrimethoxysilane, 4-chlorophenyltrichlorosilane, phenyltrichlorosilane, phenoxytrichlorosilane, phenyldichlorosilane, phenylsilane, diallyldichlorosilane, cyclohexyltrichlorosilane, dimethyl Vinylsilane, 3-hydroxy-1-propynyltrimethylsilane, 2-propynyloxytrimethylsilane, dimethylethoxyethynylsilane, diacetoxydimethylsilane, allyloxychloromethyldimethylsilane, hexyltrichlorosilane, tris (2-chloroethoxy) silane, allyl Tolumethylsilane, methylpentyldichlorosilane, 1-chloromethyl-2-chloroethoxytrime Silane, allyloxytrimethylsilane, ethoxydimethylvinylsilane, isopropenoxytrimethylsilane, acetoxymethyltrimethylsilane, 3-chloropropyltrimethylsilane, tertiary butyldimethylchlorosilane, triethylchlorosilane, 1-chloromethylethoxyethoxytrimethylsilane, 3-chloro Propoxytrimethylsilane, 3-chloropropyldimethoxymethylsilane, chloromethyldiethoxymethylsilane, triethoxychlorosilane, 3-chloropropyltrimethoxysilane, trimethylpropylsilane, trimethylisopropylsilane, triethylsilane, diethyldimethylsilane, butyldimethylsilane, Trimethylpropoxysilane, trimethylisopropoxysilane, triethylsilano , Diethoxydimethylsilane, triethoxysilane, benzyltrichlorosilane, p-tolyltrichlorosilane, methylphenyldichlorosilane, methylphenylchlorosilane, methylphenylsilane, methyltrivinylsilane, diacetoxymethylvinylsilane, methyltriacetoxysilane, allyloxydimethyl Vinylsilane, heptyltrichlorosilane, diethylmethylvinylsilane, hexylmethyldichlorosilane, butylchloromethyldimethylsilane, chloromethyltriethoxysilane, tertiary butoxytrimethylsilane, butyldimethylhydroxymethylsilane, 1-methylpropoxytrimethylsilane, isobutoxytrimethylsilane , Butoxytrimethylsilane, butyltrimethoxysilane, methyltriethoxy Silane, phenylvinyldichlorosilane, dimethylphenylchlorosilane, dimethylphenylsilane, tetravinylsilane, triacetoxyvinylsilane, tetraacetoxysilane, ethyltriacetoxysilane, 3-chloropropylmethyldivinylsilane, diallyldimethylsilane, 1,1-dimethylpropynyloxy Trimethylsilane, diethoxydivinylsilane, octyltrichlorosilane, butyldimethylvinylsilane, heptylmethyldichlorosilane, dibutyldichlorosilane, dimethylisobutoxyvinylsilane, acetoxytriethylsilane, triethoxyvinylsilane, tetraethylsilane, dimethyldipropylsilane, octylsilane, di Ethoxydiethylsilane, dimethyldipropoxysilane, ethyltriethoxysila , Tetraethoxysilane, methylphenylvinylsilane, phenyltrimethylsilane, dimethylhydroxymethylphenylsilane, phenoxytrimethylsilane, dimethoxymethylphenylsilane, phenyltrimethoxysilane, methyloctyldichlorosilane, dimethylisopentyloxyvinylsilane, allyltriethoxysilane, tolu Propylchlorosilane, butyl-3-chloropropyldimethylsilane, 3-chloropropyltriethoxysilane, tripropylsilane, propyltriethoxysilane, hexyltrimethoxysilane, dimethylphenylvinylsilane, benzyltrimethylsilane, dimethylethoxyphenylsilane, methoxytripropyl Silane, dibutoxydimethylsilane, methyltripropoxysilane, methylto It can be used tetraisopropoxysilane like.
As the reaction gas, hydrogen, nitrogen, or the like can be used in addition to oxygen.
[0010]
In the present invention, the type of the reaction gas and the monomer gas is selected, and the flow rate or supply amount of each is adjusted, whereby the film thickness, refractive index, It is possible to control thin film physical properties such as hardness.
As the plasma source 31, a plasma source having a radio frequency (RF) inductive coupling type electrode can be preferably used, and variations in film thickness and thin film physical property distribution can be reduced. Further, as shown in FIG. 1, by disposing the plasma source 31 in the horizontal direction of the substrate holder 21 (side surface of the vacuum processing chamber 11), foreign matters such as dust fall on the spectacle lens 23 (substrate) surface. -Prevents adhesion and reduces variations in film thickness and thin film physical property values.
[0011]
The upper trigger 37 is an electron beam source accelerated to several hundred eV so that plasma generation is performed quickly and stably when the plasma of the plasma source is activated. On the lower surface of the substrate holder 21, a member that performs the same operation as that of the upper surface side is provided. Specifically, a lower exhaust port 19 , a lower plasma source 41, a lower reaction gas supply source 43, a lower reaction gas supply pipe 45, and a lower trigger 47 are installed, and the upper surface side of the substrate holder 21 is installed. The same effect can be obtained. In addition, in the present invention, thin film forming conditions such as the degree of vacuum, gas flow rate, and type of gas used can be individually selected on the upper surface side and the lower surface side of the substrate holder. Thin film physical properties such as rate and hardness can be controlled independently.
[0012]
【The invention's effect】
According to the present invention, thin films such as a hard coat layer (protective film) and an antireflection film can be efficiently formed on both surfaces of a spectacle lens simultaneously by a dry method. It is also possible to individually control the physical property values of the thin film formed on both surfaces of the spectacle lens.
Furthermore, by arranging the plasma source in the horizontal direction of the substrate holder and supplying the plasma in the horizontal direction with respect to the substrate holder, foreign matter such as dust is prevented from falling and adhering to the spectacle lens, and the film thickness, Variations in the distribution of thin film property values can be reduced.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing an embodiment of an apparatus used in the present invention.
FIG. 2 is a cross-sectional view (plan view) along line AA in FIG. 1;
[Explanation of symbols]
11 Vacuum processing chamber 13 Upper support member 15 Lower support member 17 Upper exhaust port 19 Lower exhaust port 21 Substrate holder 23 Eyeglass lens 25 Shield plate 31 Upper plasma source 33 Upper reaction gas supply source 35 Upper reaction gas supply pipe 37 Upper trigger 41 Lower plasma source 43 Lower reaction gas supply source 45 Lower reaction gas supply pipe 47 Lower trigger

Claims (4)

A method for simultaneous film formation on both sides of a spectacle lens,
The spectacle lens is mounted on a flat substrate holder and introduced into a vacuum processing chamber, the substrate holder is rotated in a horizontal direction,
The monomer gas and the reactive gas are placed on both sides of the eyeglass lens so as to be horizontal with respect to the substrate holder from a position symmetrical about the intersection of the rotation axis of the substrate holder and the horizontal plane of the substrate holder. Supply plasma and
While the thin film forming conditions are individually selected on one surface side and the other surface side of the spectacle lens, the monomer gas and the reaction gas in a plasma form are reacted, and the thin film made of this reaction product is converted into the spectacle lens. A simultaneous double-sided film forming method characterized in that the film is simultaneously formed on both sides. A double-sided simultaneous film-forming device that forms films on both sides of a spectacle lens simultaneously,
A disc-shaped substrate holder that is disposed in a vacuum processing chamber and that is mounted with the spectacle lens and rotates in the horizontal direction, a monomer gas supply member that supplies monomer gas to the upper surface side of the substrate holder, and the substrate holder An upper plasma source for supplying reactive gas plasma to the upper surface side, a monomer gas supply member for supplying monomer gas to the lower surface side of the substrate holder, and a lower plasma for supplying reactive gas plasma to the lower surface side of the substrate holder A source and means for individually selecting thin film formation conditions on the upper surface side and the lower surface side of the spectacle lens ,
The upper plasma source and the lower plasma source are symmetric with respect to an intersection of a rotation axis of the substrate holder and a horizontal plane of the substrate holder, and both are horizontal with respect to the substrate holder. Installed,
A double-sided simultaneous film forming apparatus, wherein a thin film made of a reaction product of the monomer gas and the plasma-like reaction gas is simultaneously formed on both surfaces of the spectacle lens.   The double-sided simultaneous film forming apparatus according to claim 2, wherein a plasma source having a high frequency inductively coupled electrode is used as the upper plasma source and the lower plasma source.   The double-sided simultaneous film forming apparatus according to claim 2, wherein a shield plate is provided in the vacuum processing chamber to partition the upper surface side and the lower surface side of the substrate holder.

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