JP3951171B2 - Electron movable body forming material, electron movable body forming method, and electron movable body - Google Patents
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Description
【０００１】
【発明の属する技術分野】
本発明は、例えば半導体や導体と言った電子移動が可能な電子移動可能体に関する。
【０００２】
【発明が解決しようとする課題】
今日、電子材料分野における進歩は著しく、高速電子デバイス、発光デバイスからレーザーに至るまで多岐に応用されている。そして、近年、電子デバイスの分野では、ＥｒＰに代表されるランタノイド元素（Ｌｎ）とＶ族元素とからなる化合物を量子井戸とする二重障壁共鳴トンネルダイオードが期待されている。
【０００３】
すなわち、Ｇａ（１−ｘ）ＩｎｘＰ／ＬｎＰ／Ｇａ（１−ｘ）ＩｎｘＰの如きのヘテロ構造を作成し、ＬｎＰ層の厚さを厳密に制御してエピタキシャル成長することが出来たならば、半金属と半導体のコントロ−ルが可能となり、種々の超高速電子デバイスを展望することが出来ると考えられる。
【０００４】
又、光の分野でも、ＬｎのＧａＡｓやＧａ（１−ｘ）ＩｎｘＰへの添加は通信システムにおける発光デバイスとしての応用が期待されており、特に、発光効率の安定化と発光効率の向上が待たれている。
【０００５】
現在、ＧａＡｓに代表される化合物半導体の製造法は、有機金属化学気相成長法（ＭＯＣＶＤ）が主流である。
【０００６】
ところで、ランタノイド元素−Ｖ族元素のエピタキシャル成長やランタノイド元素の添加においても、良好なランタノイド有機金属原料が求められる。気化性が有るランタノイド有機金属は、β−ジケトネイトランタノイドが知られているが、このものは、固体であり、安定した蒸気が得られ難く、しかも分解性が悪いことから使用できない。そして、発光効率が良いランタノイド元素を添加した化合物半導体は得られていない。
【０００７】
従って、本発明が解決しようとする課題は、高性能な電子移動可能体が得られる技術を提供することである。特に、波長安定性や発光効率が良く、発光波長の環境温度依存性が極めて小さなランタノイド元素を添加した電子移動可能体を提供することである。
【０００８】
【課題を解決するための手段】
前記の課題を解決する為の研究を鋭意押し進めて行った結果、トリス−エチルシクロペンタジエニル−Ｌｎを用いて構成された電子移動可能体が極めて高性能なものであることを見出すに至った。
【０００９】
上記知見に基づいて本願発明が達成されたものであり、前記の課題は、
Ｇａ，Ｉｎ，Ｐを含む層とＧａ，Ｉｎ，Ｐを含む層との間に電子移動可能体膜を有する電子移動可能体における前記電子移動可能体膜を形成する為の材料であって、
前記材料はトリス−エチルシクロペンタジエニル−Ｌｎからなる
ことを特徴とする電子移動可能体形成材料によって解決される。
又、Ｇａ，Ｉｎ，Ｐを含む層及びＧａ，Ａｓを含む層と、Ｇａ，Ａｓを含む層及びＧａ，Ｉｎ，Ｐを含む層との間に、電子移動可能体膜を有する電子移動可能体における前記電子移動可能体膜を形成する為の材料であって、
前記材料はトリス−エチルシクロペンタジエニル−Ｌｎからなる
ことを特徴とする電子移動可能体形成材料によって解決される。
又、電子移動可能体膜と電子移動可能体膜との間にＧａ，Ｉｎ，Ｐを含む層及び／又はＧａ，Ａｓを含む層を有する電子移動可能体における前記電子移動可能体膜を形成する為の材料であって、
前記材料はトリス−エチルシクロペンタジエニル−Ｌｎからなる
ことを特徴とする電子移動可能体形成材料によって解決される。
【００１０】
又、Ｇａ，Ｉｎ，Ｐを含む層とＧａ，Ｉｎ，Ｐを含む層との間に電子移動可能体膜を有する電子移動可能体を形成する方法であって、
トリス−エチルシクロペンタジエニル−Ｌｎを分解・堆積させて電子移動可能体膜を形成する工程を具備する
ことを特徴とする電子移動可能体形成方法によって解決される。
又、Ｇａ，Ｉｎ，Ｐを含む層及びＧａ，Ａｓを含む層と、Ｇａ，Ａｓを含む層及びＧａ，Ｉｎ，Ｐを含む層との間に、電子移動可能体膜を有する電子移動可能体を形成する方法であって、
トリス−エチルシクロペンタジエニル−Ｌｎを分解・堆積させて電子移動可能体膜を形成する工程を具備する
ことを特徴とする電子移動可能体形成方法によって解決される。
又、電子移動可能体膜と電子移動可能体膜との間にＧａ，Ｉｎ，Ｐを含む層及び／又はＧａ，Ａｓを含む層を有する電子移動可能体における前記電子移動可能体膜を形成する方法であって、
トリス−エチルシクロペンタジエニル−Ｌｎを分解・堆積させて電子移動可能体膜を形成する工程を具備する
ことを特徴とする電子移動可能体形成方法によって解決される。
【００１１】
尚、分解は、熱、プラズマ、光、レ−ザ−の群の中から選ばれる手法、特に熱分解、光分解、反応分解、プラズマ分解、マイクロ波分解の群の中から選ばれる手法を用いて行われる。
【００１２】
又、上記電子移動可能体形成方法により基体上に形成されてなる電子移動可能体によって解決される。
【００１３】
この電子移動可能体は、例えばＬｎ，ＬｎＮ，ＬｎＰ，ＬｎＡｓ，ＬｎＳｂの群の中から選ばれる少なくとも一つからなる。或いは、Ｌｎ及び／又は酸素と結合したＬｎを含むＧａＡｓ又はＧａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）である。
【００１４】
又、Ｇａ，Ｉｎ，Ｐを含む層とＧａ，Ｉｎ，Ｐを含む層との間に、上記電子移動可能体形成方法により形成されてなる電子移動可能体膜を有することを特徴とする電子移動可能体によって解決される。
【００１５】
又、Ｇａ，Ｉｎ，Ｐを含む層及びＧａ，Ａｓを含む層と、Ｇａ，Ａｓを含む層及びＧａ，Ｉｎ，Ｐを含む層との間に、上記電子移動可能体形成方法により形成されてなる電子移動可能体膜を有することを特徴とする電子移動可能体によって解決される。
【００１６】
又、上記電子移動可能体形成方法により形成されてなる電子移動可能体膜と上記電子移動可能体形成方法により形成されてなる電子移動可能体膜との間に、Ｇａ，Ｉｎ，Ｐを含む層及び／又はＧａ，Ａｓを含む層を有することを特徴とする電子移動可能体によって解決される。
【００１７】
上記Ｇａ，Ｉｎ，Ｐを含む層は、例えばＧａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の間の数）である。
【００１８】
尚、本願出願人は、先に、Ｒ１Ｒ２Ｒ３Ｌｎ〔Ｒ１，Ｒ２，Ｒ３はがエチルシクロペンタジエニル基（（Ｃ２Ｈ５）Ｃ５Ｈ４−）、イソプロピルシクロペンタジエニル基（（ｉ−Ｃ３Ｈ７）Ｃ５Ｈ４−）、ノルマルブタンシクロペンタジエニル基（（ｎ−Ｃ４Ｈ９）Ｃ５Ｈ４−）などのアルキル基、シリコン系化合物の基、及びアミノ基の群の中から選ばれる基〕で表される化合物からなるランタニド系膜形成材料、及びこのランタニド系膜形成材料で構成された膜をゲート酸化膜として用いた半導体素子を提案（特願２０００−２８００６２）している。
【００１９】
しかし、この提案（特願２０００−２８００６２）は、電子移動可能体に関するものではない。そればかりか、特願２０００−２８００６２の具体的実施例で挙げられている［（ｉ−Ｃ３Ｈ７）Ｃ５Ｈ４］３Ｌｎを用いて電子移動可能体膜を形成した半導体素子は、［（Ｃ２Ｈ５）Ｃ５Ｈ４］３Ｌｎを用いて電子移動可能体膜を形成した半導体素子に比べて劣るものであった。
【００２０】
【発明の実施の形態】
本発明になる電子移動可能体形成材料は、トリス−エチルシクロペンタジエニル−Ｌｎからなる。
【００２１】
本発明になる電子移動可能体形成方法は、トリス−エチルシクロペンタジエニル−Ｌｎを分解させ、基体上に電子移動可能体を設ける方法である。トリス−エチルシクロペンタジエニル−Ｌｎの分解は、熱、プラズマ、光、レ−ザ−の群の中から選ばれる手法、特に熱分解、光分解、反応分解、プラズマ分解、マイクロ波分解の群の中から選ばれる手法を用いて行われる。
【００２２】
本発明になる電子移動可能体は、上記電子移動可能体形成方法により基体上に形成されてなる電子移動可能体である。電子移動可能体は、例えばＬｎ，ＬｎＮ，ＬｎＰ，ＬｎＡｓ，ＬｎＳｂの群の中から選ばれる少なくとも一つからなる。或いは、Ｌｎ及び／又は酸素と結合したＬｎを含むＧａＡｓ又はＧａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）である。Ｌｎ及び／又は酸素と結合したＬｎの含有割合は、特に、薄膜１ｃｍ３当たり１０１５〜１０２２個である。
【００２３】
又、本発明になる電子移動可能体は、Ｇａ，Ｉｎ，Ｐを含む層とＧａ，Ｉｎ，Ｐを含む層との間に、上記電子移動可能体形成方法により形成されてなる電子移動可能体膜を有するものである。或いは、Ｇａ，Ｉｎ，Ｐを含む層及びＧａ，Ａｓを含む層と、Ｇａ，Ａｓを含む層及びＧａ，Ｉｎ，Ｐを含む層との間に、上記電子移動可能体形成方法により形成されてなる電子移動可能体膜を有するものである。特に、Ｇａ，Ｉｎ，Ｐを含む層及びＧａ，Ａｓを含む層と、Ｇａ，Ａｓを含む層及びＧａ，Ｉｎ，Ｐを含む層との間に、前記Ｇａ，Ａｓを含む層に隣接して上記電子移動可能体形成方法により形成されてなる電子移動可能体膜を有するものである。若しくは、上記電子移動可能体形成方法により形成されてなる電子移動可能体膜と上記電子移動可能体形成方法により形成されてなる電子移動可能体膜との間に、Ｇａ，Ｉｎ，Ｐを含む層及び／又はＧａ，Ａｓを含む層を有するものである。Ｇａ，Ｉｎ，Ｐを含む層は、例えばＧａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）である。
【００２４】
以下、更に具体的な実施例を挙げて説明する。
【００２５】
【実施例１〜１３】
［トリス−エチルシクロペンタジエニル−Ｌｎの合成］
トリス−エチルシクロペンタジエニル−エルビウム（ＥｔＣｐ３Ｅｒ）が次のようにして合成された。。
【００２６】
先ず、市販のエチルシクロペンタジエンと粉末状の金属ナトリウムとを溶媒中で反応させ、エチルシクロペンタジエニルナトリウムを合成した。この時の溶媒は、テトラヒドロフラン、ヘキサンなどであって、有機金属に不活性なものなら用いられる。又、粉末状の金属ナトリウムの代わりにＮａＨ，ＮａＮＨ２でも可能である。アルキルリチウム等を用いてエチルシクロペンタジエニルリチウムを合成しても良い。
【００２７】
合成されたエチルシクロペンタジエニルナトリウムと無水塩化エルビウムとを溶媒中で反応させ、ＥｔＣｐ３Ｅｒを合成した。この時の溶媒はテトラヒドロフラン、ヘキサンなどであって、有機金属に不活性なものなら用いられる。
【００２８】
溶媒を濃縮後、残渣からＥｔＣｐ３Ｅｒを溶媒抽出または蒸留抽出によって回収し、得られた粗生物を精密蒸留によって精製し、ＥｔＣｐ３Ｅｒを得た。
【００２９】
このようにして得られたＥｔＣｐ３Ｅｒは、ＴＧ−ＤＴＡ分析によれば、気化特性が良好であることが判明した。又、融点は７０℃以下であり、気化させる温度において液体であることも判った。
【００３０】
又、化学組成も理論式と一致していた。更に、ＩＣＰ−ＭＡＳＳによれば、金属不純物は検出限界以下の高純度品であることが確認された。
【００３１】
尚、上記の合成が数回試みられた。その際の収率は３５〜７５％であった。これに対して、トリス−シクロペンタジエニル−エルビウム（Ｃｐ３Ｅｒ）の収率は３５％より低く、ＥｔＣｐ３Ｅｒの製造コストはＣｐ３Ｅｒの製造コストよりも低いことが判った。
又、Ｅｒの代わりにＣｅ，Ｐｒ，Ｎｄ，Ｐｍ，Ｓｍ，Ｅｕ，Ｇｄ，Ｔｂ，Ｄｙ，Ｈｏ，Ｔｍ，Ｙｂが用いられて同様に行われ、トリス−エチルシクロペンタジエニル−Ｌｎが合成された。
【００３２】
【実施例１４】
図１は成膜装置（ＭＯＣＶＤ）の概略図である。同図中、１ａ，１ｂ，１ｃ，１ｄ，１ｅは原料容器、３は加熱器、４は分解反応炉、５は基板である。
【００３３】
容器１ａ，１ｂ，１ｃ，１ｄ，１ｅには、各々、トリエチルガリウム（ＴＥＧ）、トリメチルインジウム（ＴＭＩ）、ＥｔＣｐ３Ｅｒ、ターシャリ−ブチルアルシン（ＴＢＡｓ）、ターシャリ−ブチルフォスフィン（ＴＢＰ）が入れられており、室温〜１５０℃の範囲の温度で保持されている。そして、キャリアガスとして水素が１〜２０００ｍｌ／ｍｉｎの割合で吹き込まれた。分解反応炉４内は０．１ａｔｍにされ、基板温度は流す原料種によって４５０℃〜７００℃に変化させた。初めにＴＢＡｓとＴＥＧとが、次にＴＢＰとＴＥＧとＴＭＩとが、その次にＴＢＰとＥｔＣｐ３Ｅｒとが、最後にＴＢＰとＴＥＧとＴＭＩとが流された。このようにして、基板５上に薄膜が形成された。
【００３４】
成膜後に基板を取り出し、膜の断面のＳＥＭ像を観測すると共に、ＳＩＭＳプロファイルの結果とを合わせることによって、基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＥｒＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成されていることが確認された。
【００３５】
【実施例１５〜１９】
実施例１４において、ＴＢＰの代わりに水素、希釈酸素、アルキルヒドラジン、ＴＢＡｓ、トリメチルアンチモンをＥｔＣｐ３Ｅｒと共に流した以外は同様に行った。
【００３６】
そして、基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／Ｅｒ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用ヘテロ構造化合物（化合物半導体）の膜が基板上に作成された素子（実施例１５）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／Ｅｒ２Ｏ３／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例１６）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＥｒＮ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例１７）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＥｒＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例１８）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＥｒＳｂ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例１９）を得た。
【００３７】
【実施例２０〜２４】
実施例１５〜１９において、熱分解の代わりにプラズマ、光、レーザー、マイクロ波による分解手段を用いて同様に行い、同様な結果を得た。
【００３８】
【実施例２５〜３６】
実施例１４において、ＥｔＣｐ３Ｅｒの代わりにＥｔＣｐ３Ｃｅ，ＥｔＣｐ３Ｐｒ，ＥｔＣｐ３Ｎｄ，ＥｔＣｐ３Ｐｍ，ＥｔＣｐ３Ｓｍ，ＥｔＣｐ３Ｅｕ，ＥｔＣｐ３Ｇｄ，ＥｔＣｐ３Ｔｂ，ＥｔＣｐ３Ｄｙ，ＥｔＣｐ３Ｈｏ，ＥｔＣｐ３Ｔｍ，ＥｔＣｐ３Ｙｂが用いられて同様に行われた。
【００３９】
そして、基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＣｅＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例２５）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＰｒＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例２６）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＮｄＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例２７）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＰｍＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例２８）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＳｍＰ／Ｇａ（ １−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例２９）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＥｕＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３０）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＧｄＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３１）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＴｂＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３２）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＤｙＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３３）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＨｏＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３４）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＴｍＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３５）、
基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＹｂＰ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成された素子（実施例３６）が得られた。
【００４０】
【実施例３７】
図１の成膜装置を用いた。容器１ａ，１ｂ，１ｃ，１ｄ，１ｅには、各々、ＴＥＧ，ＴＭＩ，ＥｔＣｐ３Ｅｒ，ＴＢＡｓ，ＴＢＰが入れられており、室温〜１５０℃の範囲の温度で保持されている。そして、キャリアガスとして水素が１〜２０００ｍｌ／ｍｉｎの割合で吹き込まれた。分解反応炉４内は０．１ａｔｍにされ、基板温度は流す原料種によって４５０℃〜７００℃に変化させた。初めにＴＢＡｓとＴＥＧとが、次にＴＢＰとＴＥＧとＴＭＩとが、その次にＴＢＡｓとＴＥＧとＥｔＣｐ３Ｅｒとが、最後にＴＢＰとＴＥＧとＴＭＩとが流された。尚、ＥｔＣｐ３Ｅｒを流す際、Ａｒ希釈酸素（酸素濃度３８ｐｐｍ）を１〜５０ｍｌ／ｍｉｎの割合で同時に供給した。
【００４１】
このようにして、基板５上に薄膜が形成された。
【００４２】
成膜後に基板を取り出し、膜の断面のＳＥＭ像を観測すると共に、ＳＩＭＳプロファイルの結果とを合わせることによって、基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＧａＡｓ：Ｅｒ，Ｏ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成されていることが確認された。尚、Ｅｒの濃度は約５×１０１７個／ｃｍ３であった。
【００４３】
この素子（発光デバイス）の発光スペクトルを観察した処、室温で波長１．５μｍ帯に高輝度でシャープな発光が観察された。又、その発光波長は環境温度に対して極めて安定であった。
【００４４】
【実施例３８】
実施例３７において、ＧａＩｎＰ膜とＧａＡｓ：Ｅｒ，Ｏ膜との界面にＥｒを添加していないＧａＡｓ膜を持つ、すなわち基板／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）／ＧａＡｓ／ＧａＡｓ：Ｅｒ，Ｏ／ＧａＡｓ／Ｇａ（１−ｘ）ＩｎｘＰ（ｘは０〜１の数）の構造の電子デバイス用ヘテロ構造化合物（化合物半導体）の膜が基板上に作成されている素子を作成した。尚、ＧａＡｓ膜はＴＢＡｓとＴＥＧとを流すことによって成膜された。
【００４５】
この素子（発光デバイス）は、実施例３７の素子のものよりも発光効率に優れていた。
【００４６】
【実施例３９】
図１の成膜装置を用いた。容器１ａ，１ｂ，１ｃ，１ｄ，１ｅには、各々、ＴＥＧ，ＴＭＩ，ＥｔＣｐ３Ｅｒ，ＴＢＡｓ，ＴＢＰが入れられており、室温〜１５０℃の範囲の温度で保持されている。そして、キャリアガスとして水素が１〜２０００ｍｌ／ｍｉｎの割合で吹き込まれた。分解反応炉４内は０．１ａｔｍにされ、基板温度は流す原料種によって４５０℃〜７００℃に変化させた。初めにＴＢＰとＥｔＣｐ３Ｅｒとが、次にＴＢＰとＴＭＩとが、最後にＴＢＰとＥｔＣｐ３Ｅｒとが流された。
【００４７】
このようにして、基板５上に薄膜が形成された。
【００４８】
成膜後に基板を取り出し、膜の断面のＳＥＭ像を観測すると共に、ＳＩＭＳプロファイルの結果とを合わせることによって、基板／ＥｒＰ／ＩｎＰ／ＥｒＰの構造の電子デバイス用（導電性）ヘテロ構造化合物の膜が基板上に作成されていることが確認された。
【００４９】
【発明の効果】
高性能な電子デバイスが得られる。特に、波長安定性や発光効率が良く、発光波長の環境温度依存性が極めて小さなランタノイド元素を添加した電子デバイスが得られる。
【図面の簡単な説明】
【図１】成膜装置（ＭＯＣＶＤ）の概略図
【符号の説明】
１ａ，１ｂ，１ｃ，１ｄ，１ｅ 原料容器
３ 加熱器
４ 分解反応炉
５ 基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron-movable body that can move electrons, such as a semiconductor or a conductor.
[0002]
[Problems to be solved by the invention]
Today, advances in the field of electronic materials are remarkable, and they are applied in a wide range from high-speed electronic devices and light-emitting devices to lasers. In recent years, in the field of electronic devices, double barrier resonant tunneling diodes having a quantum well of a compound composed of a lanthanoid element (Ln) typified by ErP and a group V element are expected.
[0003]
That is, if a heterostructure such as Ga (1-x) In x P / LnP / Ga (1-x) In x P can be created and the thickness of the LnP layer can be controlled strictly and epitaxially grown For example, it becomes possible to control semimetals and semiconductors, and it is considered that various ultrafast electronic devices can be prospected.
[0004]
In addition, in the field of light, addition of Ln to GaAs or Ga (1-x) In x P is expected to be applied as a light emitting device in a communication system, in particular, stabilization of light emission efficiency and improvement of light emission efficiency. Is waiting.
[0005]
At present, metal-organic chemical vapor deposition (MOCVD) is the mainstream method for producing compound semiconductors represented by GaAs.
[0006]
By the way, a good lanthanoid organometallic raw material is also demanded in the epitaxial growth of a lanthanoid element-group V element and the addition of a lanthanoid element. A lanthanoid organometal having a vaporization property is known to be a β-diketonate lanthanoid, but this is a solid, it is difficult to obtain a stable vapor, and it cannot be used because it has a poor decomposability. Further, a compound semiconductor to which a lanthanoid element with good luminous efficiency is added has not been obtained.
[0007]
Therefore, the problem to be solved by the present invention is to provide a technique for obtaining a high-performance electron movable body. In particular, an object of the present invention is to provide an electron transferable body to which a lanthanoid element is added, which has good wavelength stability and luminous efficiency and has extremely small dependence of the emission wavelength on the environmental temperature.
[0008]
[Means for Solving the Problems]
As a result of eagerly pursuing research for solving the above-mentioned problems, it has been found that an electron-movable body composed of tris-ethylcyclopentadienyl-Ln has extremely high performance. .
[0009]
The present invention has been achieved based on the above findings,
A material for forming the electron movable body film in an electron movable body having an electron movable body film between a layer containing Ga, In, and P and a layer containing Ga, In, and P,
The material is solved by an electron transferable body forming material characterized in that it comprises tris-ethylcyclopentadienyl-Ln.
An electron-movable body having an electron-movable body film between a layer containing Ga, In, P and a layer containing Ga, As and a layer containing Ga, As and a layer containing Ga, In, P A material for forming the electron transferable body film in
Said material consists of tris-ethylcyclopentadienyl-Ln
This is solved by an electron movable body forming material characterized in that.
Further, the electron-movable body film in the electron-movable body having a layer containing Ga, In, P and / or a layer containing Ga, As is formed between the electron-movable body film and the electron-movable body film. Material for
Said material consists of tris-ethylcyclopentadienyl-Ln
This is solved by an electron movable body forming material characterized in that.
[0010]
And a method of forming an electron transferable body having an electron transferable body film between a layer containing Ga, In, P and a layer containing Ga, In, P,
The object is solved by a method for forming an electron transferable body comprising the step of decomposing and depositing tris-ethylcyclopentadienyl-Ln to form an electron transferable body film .
An electron-movable body having an electron-movable body film between a layer containing Ga, In, P and a layer containing Ga, As and a layer containing Ga, As and a layer containing Ga, In, P A method of forming
Comprising the step of decomposing and depositing tris-ethylcyclopentadienyl-Ln to form an electron transferable body film.
This is solved by the method of forming an electron movable body.
Further, the electron-movable body film in the electron-movable body having a layer containing Ga, In, P and / or a layer containing Ga, As is formed between the electron-movable body film and the electron-movable body film. A method,
Comprising the step of decomposing and depositing tris-ethylcyclopentadienyl-Ln to form an electron transferable body film.
This is solved by the method of forming an electron movable body.
[0011]
Decomposition is performed using a method selected from the group of heat, plasma, light, and laser, particularly a method selected from the group of thermal decomposition, photolysis, reaction decomposition, plasma decomposition, and microwave decomposition. Done.
[0012]
In addition, the problem can be solved by an electron movable body formed on a substrate by the above-described method of forming an electron movable body.
[0013]
This electron transferable body consists of at least one selected from the group of Ln, LnN, LnP, LnAs, LnSb, for example. Alternatively, GaAs or Ga (1-x) In x P (x is a number from 0 to 1) containing Ln and / or Ln bonded to oxygen.
[0014]
An electron transfer comprising an electron transferable body film formed by the above-described electron transferable body forming method between a layer containing Ga, In, and P and a layer containing Ga, In, and P. Solved by possible body.
[0015]
In addition, a layer containing Ga, In, P and a layer containing Ga, As, and a layer containing Ga, As and a layer containing Ga, In, P are formed by the above-described method of forming an electron movable body. This is solved by an electron transportable body characterized by having an electron transportable body film.
[0016]
Further, a layer containing Ga, In, and P between the electron movable body film formed by the electron movable body forming method and the electron movable body film formed by the electron movable body forming method. And / or solved by an electron-movable body characterized by having a layer containing Ga, As.
[0017]
The layer containing Ga, In, and P is, for example, Ga (1-x) In x P (x is a number between 0 and 1 ).
[0018]
Incidentally, the present applicant has previously, R 1 R 2 R 3 Ln [R 1, R 2, R 3 Haga ethyl cyclopentadienyl group ((C 2 H 5) C 5 H 4 -), isopropyl cyclo pentadienyl ((i-C 3 H 7 ) C 5 H 4 -), normal butane cyclopentadienyl group ((n-C 4 H 9 ) C 5 H 4 -) alkyl radicals, such as, silicon compound A lanthanide-based film-forming material comprising a compound represented by the following formula: a group selected from the group of amino groups], and a semiconductor device using a film composed of the lanthanide-based film-forming material as a gate oxide film Proposed (Japanese Patent Application 2000-280062).
[0019]
However, this proposal (Japanese Patent Application No. 2000-280062) does not relate to an electronically movable body. In addition, a semiconductor element in which an electron transferable body film is formed using [(i-C 3 H 7 ) C 5 H 4 ] 3 Ln, which is mentioned in a specific example of Japanese Patent Application No. 2000-280062, [(C 2 H 5 ) C 5 H 4 ] 3 Ln was inferior to a semiconductor element in which an electron transferable body film was formed.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
The electron transferable body forming material according to the present invention is composed of tris-ethylcyclopentadienyl-Ln.
[0021]
The method for forming an electron transferable body according to the present invention is a method for disposing tris-ethylcyclopentadienyl-Ln to provide an electron transferable body on a substrate. Tris-ethylcyclopentadienyl-Ln is decomposed by a method selected from the group consisting of heat, plasma, light, and laser, particularly thermal decomposition, photolysis, reaction decomposition, plasma decomposition, and microwave decomposition. It is performed using a method selected from
[0022]
The electron movable body according to the present invention is an electron movable body formed on a substrate by the electron movable body forming method. The electron movable body is made of at least one selected from the group of, for example, Ln, LnN, LnP, LnAs, and LnSb. Alternatively, GaAs or Ga (1-x) In x P (x is a number from 0 to 1) containing Ln and / or Ln bonded to oxygen. The content ratio of Ln combined with Ln and / or oxygen is particularly 10 15 to 10 22 per 1 cm 3 of the thin film.
[0023]
Further, the electron movable body according to the present invention is an electron movable body formed by the above-described method for forming an electron movable body between a layer containing Ga, In, and P and a layer containing Ga, In, and P. It has a film. Alternatively, it is formed between the layer containing Ga, In, P and the layer containing Ga, As and the layer containing Ga, As and the layer containing Ga, In, P by the above-described method of forming an electron movable body. It has an electron-transferable body film. In particular, a layer containing Ga, In, P and a layer containing Ga, As, and a layer containing Ga, As and a layer containing Ga, In, P are adjacent to the layer containing Ga, As, P. It has an electron transferable body film formed by the above-mentioned electron transferable body forming method. Alternatively, a layer containing Ga, In, and P between the electron movable body film formed by the electron movable body forming method and the electron movable body film formed by the electron movable body forming method. And / or a layer containing Ga and As. The layer containing Ga, In, and P is, for example, Ga (1-x) In x P (x is a number from 0 to 1).
[0024]
Hereinafter, more specific examples will be described.
[0025]
Examples 1 to 13
[Synthesis of Tris-ethylcyclopentadienyl-Ln]
Tris-ethylcyclopentadienyl-erbium (EtCp 3 Er) was synthesized as follows. .
[0026]
First, commercially available ethylcyclopentadiene and powdered metallic sodium were reacted in a solvent to synthesize ethylcyclopentadienyl sodium. The solvent at this time is tetrahydrofuran, hexane, or the like, and any one that is inert to the organic metal is used. Further, NaH and NaNH 2 can be used instead of powdered metal sodium. Ethylcyclopentadienyl lithium may be synthesized using alkyl lithium or the like.
[0027]
The synthesized ethylcyclopentadienyl sodium and anhydrous erbium chloride were reacted in a solvent to synthesize EtCp 3 Er. The solvent at this time is tetrahydrofuran, hexane or the like, and any one which is inert to the organic metal is used.
[0028]
After concentrating the solvent, the EtCp 3 Er from the residue recovered by solvent extraction or distillation extraction, the resulting crude product was purified by precision distillation to obtain EtCp 3 Er.
[0029]
EtCp 3 Er thus obtained was found to have good vaporization characteristics according to TG-DTA analysis. It was also found that the melting point was 70 ° C. or lower, and it was a liquid at the vaporizing temperature.
[0030]
The chemical composition also agreed with the theoretical formula. Furthermore, according to ICP-MASS, it was confirmed that the metal impurities are high-purity products having a detection limit or less.
[0031]
The above synthesis was tried several times. The yield at that time was 35 to 75%. In contrast, the yield of tris-cyclopentadienyl-erbium (Cp 3 Er) was found to be lower than 35%, and the production cost of EtCp 3 Er was lower than the production cost of Cp 3 Er.
Further, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Tm, and Yb are used in the same manner instead of Er, and tris-ethylcyclopentadienyl-Ln is synthesized. It was.
[0032]
Example 14
FIG. 1 is a schematic view of a film forming apparatus (MOCVD). In the figure, 1a, 1b, 1c, 1d, and 1e are raw material containers, 3 is a heater, 4 is a decomposition reaction furnace, and 5 is a substrate.
[0033]
The containers 1a, 1b, 1c, 1d, and 1e are filled with triethylgallium (TEG), trimethylindium (TMI), EtCp 3 Er, tertiary-butylarsine (TBAs), and tertiary-butylphosphine (TBP), respectively. It is held at a temperature in the range of room temperature to 150 ° C. Then, hydrogen was blown in as a carrier gas at a rate of 1 to 2000 ml / min. The inside of the decomposition reaction furnace 4 was set to 0.1 atm, and the substrate temperature was changed from 450 ° C. to 700 ° C. depending on the raw material species to be flowed. First, TBAs and TEG, then TBP, TEG, and TMI, then TBP, EtCp 3 Er, and finally TBP, TEG, and TMI were flowed. In this way, a thin film was formed on the substrate 5.
[0034]
The substrate is taken out after film formation, and the SEM image of the cross section of the film is observed, and by combining with the result of the SIMS profile, the substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1). It was confirmed that a film of a (conductive) heterostructure compound for electronic devices having a structure of / ErP / Ga (1-x) In x P (x is a number from 0 to 1) was formed on the substrate.
[0035]
Examples 15 to 19
In Example 14, the same procedure was performed except that hydrogen, diluted oxygen, alkylhydrazine, TBAs, and trimethylantimony were flowed together with EtCp 3 Er instead of TBP.
[0036]
An electronic device having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / Er / Ga (1-x) In x P (x is a number from 0 to 1). A device in which a film of a heterostructure compound (compound semiconductor) for use is formed on a substrate (Example 15),
Electrons having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1) / Er 2 O 3 / Ga (1-x) In x P (x is a number from 0 to 1) An element in which a film of a (conductive) heterostructure compound for a device was formed on a substrate (Example 16),
Substrate / GaAs / Ga (1-x ) In x P (x number of 0~1) / ErN / Ga (1 -x) In x P (x is a number from 0 to 1) for an electronic device structure ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 17),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / ErAs / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 18),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / ErSb / Ga (1-x) In x P (x is a number from 0 to 1) ( An element (Example 19) in which a film of a conductive) heterostructure compound was formed on a substrate was obtained.
[0037]
Examples 20 to 24
In Examples 15-19, it carried out similarly using the decomposition means by a plasma, light, a laser, and a microwave instead of thermal decomposition, and obtained the same result.
[0038]
Examples 25-36
In Example 14, instead EtCp 3 Ce of EtCp 3 Er, EtCp 3 Pr,
[0039]
An electronic device having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / CeP / Ga (1-x) In x P (x is a number from 0 to 1). A device in which a film of a (conductive) heterostructure compound is prepared on a substrate (Example 25),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / PrP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 26),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / NdP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 27),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / PmP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 28),
For an electronic device having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / SmP / Ga ( 1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 29),
Substrate / GaAs / Ga (1-x ) In x P (x number of 0~1) / EuP / Ga (1 -x) In x P (x is a number from 0 to 1) for an electronic device structure ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 30),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / GdP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 31),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / TbP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 32),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / DyP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound is formed on a substrate (Example 33);
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / HoP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 34),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / TmP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device in which a film of a conductive) heterostructure compound was formed on a substrate (Example 35),
For electronic devices having a structure of substrate / GaAs / Ga (1-x) In x P (x is a number from 0 to 1 ) / YbP / Ga (1-x) In x P (x is a number from 0 to 1) ( A device (Example 36) in which a film of a conductive) heterostructure compound was formed on a substrate was obtained.
[0040]
Example 37
The film forming apparatus of FIG. 1 was used. The containers 1a, 1b, 1c, 1d, and 1e contain TEG, TMI, EtCp 3 Er, TBAs, and TBP, respectively, and are held at a temperature in the range of room temperature to 150 ° C. Then, hydrogen was blown in as a carrier gas at a rate of 1 to 2000 ml / min. The inside of the decomposition reactor 4 was set to 0.1 atm, and the substrate temperature was changed from 450 ° C. to 700 ° C. depending on the raw material species to be flowed. First, TBAs and TEG, then TBP, TEG, and TMI, then TBAs, TEG, EtCp 3 Er, and finally TBP, TEG, and TMI were flowed. In addition, when EtCp 3 Er was flowed, Ar diluted oxygen (oxygen concentration 38 ppm) was simultaneously supplied at a rate of 1 to 50 ml / min.
[0041]
In this way, a thin film was formed on the substrate 5.
[0042]
The substrate is taken out after the film formation, while observing the SEM image of a cross-section of the film, by combining the results of the SIMS profile, substrate / GaAs / Ga (1-x ) In x P (x is a number from 0 to 1) / GaAs: Er, O / Ga (1-x) In x P (x is a number from 0 to 1) structure for electronic device (conductive) heterostructure compound film is formed on the substrate confirmed. The Er concentration was about 5 × 10 17 pieces / cm 3 .
[0043]
When the emission spectrum of this element (light-emitting device) was observed, high-intensity and sharp light emission was observed in the wavelength band of 1.5 μm at room temperature. The emission wavelength was extremely stable with respect to the environmental temperature.
[0044]
Example 38
In Example 37, there is a GaAs film to which Er is not added at the interface between the GaInP film and the GaAs: Er, O film, that is, the substrate / GaAs / Ga (1-x) In x P (x is 0 to 1) . Number) / GaAs / GaAs: Er, O / GaAs / Ga (1-x) In x P (x is a number from 0 to 1) heterostructure compound (compound semiconductor) film for electronic devices is formed on the substrate. The element that has been created was created. The GaAs film was formed by flowing TBAs and TEG.
[0045]
This element (light-emitting device) was superior in luminous efficiency to that of the element of Example 37.
[0046]
Example 39
The film forming apparatus of FIG. 1 was used. The containers 1a, 1b, 1c, 1d, and 1e contain TEG, TMI, EtCp 3 Er, TBAs, and TBP, respectively, and are held at a temperature in the range of room temperature to 150 ° C. Then, hydrogen was blown in as a carrier gas at a rate of 1 to 2000 ml / min. The inside of the decomposition reaction furnace 4 was set to 0.1 atm, and the substrate temperature was changed from 450 ° C. to 700 ° C. depending on the raw material species to be flowed. TBP and EtCp 3 Er were flowed first, then TBP and TMI, and finally TBP and EtCp 3 Er.
[0047]
In this way, a thin film was formed on the substrate 5.
[0048]
The substrate is taken out after the film formation, and the SEM image of the cross section of the film is observed, and by combining with the result of the SIMS profile, the film of the substrate / ErP / InP / ErP structure (conductive) heterostructure compound for electronic devices It was confirmed that was produced on the substrate.
[0049]
【The invention's effect】
A high-performance electronic device can be obtained. In particular, it is possible to obtain an electronic device to which a lanthanoid element is added that has good wavelength stability and luminous efficiency and has extremely small dependence of the emission wavelength on the environmental temperature.
[Brief description of the drawings]
FIG. 1 is a schematic diagram of a film forming apparatus (MOCVD).
1a, 1b, 1c, 1d, 1e
Claims (1)
前記材料はトリス−エチルシクロペンタジエニル−Ｌｎからなる
ことを特徴とする電子移動可能体形成材料。A material for forming the electron movable body film in an electron movable body having an electron movable body film between a layer containing Ga, In, and P and a layer containing Ga, In, and P,
The material for forming an electron transferable body is characterized in that the material is made of tris-ethylcyclopentadienyl-Ln.
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