JP3935175B2 - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
- Publication number
- JP3935175B2 JP3935175B2 JP2004352338A JP2004352338A JP3935175B2 JP 3935175 B2 JP3935175 B2 JP 3935175B2 JP 2004352338 A JP2004352338 A JP 2004352338A JP 2004352338 A JP2004352338 A JP 2004352338A JP 3935175 B2 JP3935175 B2 JP 3935175B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- light emitting
- electrical characteristic
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 106
- 238000002161 passivation Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000010931 gold Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
- B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
- B32B5/26—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/022—Non-woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/024—Woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/028—Net structure, e.g. spaced apart filaments bonded at the crossing points
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/02—Coating on the layer surface on fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/26—Polymeric coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
- B32B2262/0276—Polyester fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/10—Inorganic fibres
- B32B2262/101—Glass fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/10—Properties of the layers or laminate having particular acoustical properties
- B32B2307/102—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/306—Resistant to heat
- B32B2307/3065—Flame resistant or retardant, fire resistant or retardant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Textile Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Description
本発明の第2の目的は、金属−絶縁体半導体(metal-insulator-semiconductor:MIS)構造を有して静電放電から保護するガードリングを形成し、ガードリングは静電放電パルスの導電性パスを提供する発光素子及びその製造方法を提供することにある。
本発明の第3の目的は、製造工程ステップおよび工程の複雑度を増やすことなく、静電放電保護の設計を従来チップの工程ステップへ加える発光素子及びその製造方法を提供することにある。
Claims (15)
- 基板、第1電気特性の半導体層、活性層、第2電気特性の半導体層、透明コンタクト層、パシベーション層、第2電気特性の電極およびガードリングを備える発光素子であって、前記第1電気特性の半導体層は、前記基板上に位置するとともにメサを有し、
前記活性層は、前記第1電気特性の半導体層の前記メサ上に位置し、
前記第2電気特性の半導体層は、前記活性層上に位置し、
前記透明コンタクト層は、前記第2電気特性の半導体層上に位置し、前記第1電気特性の半導体層の前記メサ、前記活性層、前記第2電気特性の半導体層および前記透明コンタクト層は積層構造を形成し、
前記パシベーション層は、積層構造と、該積層構造に隣接する前記第1電気特性の半導体層の第1部分とを覆って、前記透明コンタクト層の一部を露出する第1開口を有し、
前記第2電気特性の電極は、前記第1開口に位置するとともに、前記透明コンタクト層の一部を覆い、
前記ガードリングは、前記第2電気特性の電極から前記第1電気特性の半導体層の前記第1部分上に位置する前記パシベーション層まで延伸されるとともに開口を有し、
前記ガードリング、前記パシベーション層および前記第1電気特性の半導体層が金属−絶縁体半導体(MIS)構造を形成することを特徴とする発光素子。 - 前記パシベーション層は、第2開口を備えて、前記第1電気特性の半導体層の第2部分を露出することを特徴とする請求項1記載の発光素子。
- 前記第2開口に位置する第1電気特性の電極を備えて、前記第1電気特性の半導体層の前記第2部分を覆うことを特徴とする請求項2記載の発光素子。
- ガードリングの前記開口は、前記第1電気特性の電極近くに位置することを特徴とする請求項3記載の発光素子。
- 前記ガードリングは、前記積層構造を囲むことを特徴とする請求項1記載の発光素子。
- 前記第1電気特性の半導体層の材料はn型窒化ガリウムであり、前記第2電気特性の半導体層の材料はp型窒化ガリウムであることを特徴とする請求項1記載の発光素子。
- 前記発光素子は、pin発光ダイオードであることを特徴とする請求項1記載の発光素子。
- 基板上に第1電気特性の半導体層を形成するステップと、
前記第1電気特性の半導体層上へ活性層を形成するステップと、
前記活性層上へ第2電気特性の半導体層を形成するステップと、
前記第1電気特性の半導体層の一部、前記活性層の一部および前記第2電気特性の半導体層の一部を除去してメサを形成するステップと、
前記メサ上に透明コンタクト層を形成して、前記メサ上にある前記第1電気特性の半導体層、前記活性層、前記第2電気特性の半導体層および前記透明コンタクト層により積層構造を形成するステップと、
パシベーション層を形成して、前記積層構造と、該積層構造に隣接する前記第1電気特性の半導体層の第1部分とを覆うステップと、
前記パシベーション層の一部を除去して前記透明コンタクト層の一部を露出するステップと、
前記透明コンタクト層の一部および前記パシベーション層のその他の部分上に、第2電気特性の電極を形成するステップと、
前記第2電気特性の電極から前記第1電気特性の半導体層の前記第1部分上に位置する前記パシベーション層まで延伸して、開口を有するガードリングを形成し、前記ガードリング、前記パシベーション層および前記半導体層からなる金属−絶縁体半導体(MIS)構造を形成するステップとを含むことを特徴とする発光素子の製造方法。 - 前記第1電気特性の半導体層の一部、前記活性層の一部および前記第2電気特性の半導体層の一部を除去するステップにおいて、誘導結合プラズマエッチングが使用されることを特徴とする請求項8記載の発光素子の製造方法。
- 前記積層構造と、該積層構造に隣接する前記第1電気特性の半導体層の前記第1部分とを覆う前記パシベーション層を形成するステップの後に、前記パシベーション層の一部を除去して、前記第1電気特性の半導体層の第2部分を露出するステップを含むことを特徴とする請求項8記載の発光素子の製造方法。
- 前記第1電気特性の半導体層の前記第2部分上に前記第1電気特性の電極が形成されることを特徴とする請求項10記載の発光素子の製造方法。
- ガードリングの前記開口は、前記第1電気特性の電極近くに位置することを特徴とする請求項8記載の発光素子の製造方法。
- 前記ガードリングは、前記積層構造を囲むことを特徴とする請求項8記載の発光素子の製造方法。
- 前記第1電気特性の半導体層の材料はn型窒化ガリウムであり、前記第2電気特性の半導体層の材料はp型窒化ガリウムであることを特徴とする請求項8記載の発光素子の製造方法。
- 前記発光素子は、窒化ガリウム発光ダイオードまたはpin発光ダイオードであることを特徴とする請求項8記載の発光素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093121797A TWI234299B (en) | 2004-07-21 | 2004-07-21 | Lightening device and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006032889A JP2006032889A (ja) | 2006-02-02 |
JP3935175B2 true JP3935175B2 (ja) | 2007-06-20 |
Family
ID=35656409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004352338A Expired - Fee Related JP3935175B2 (ja) | 2004-07-21 | 2004-12-06 | 発光素子及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7301272B2 (ja) |
JP (1) | JP3935175B2 (ja) |
KR (1) | KR100678380B1 (ja) |
TW (1) | TWI234299B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547572B2 (en) * | 2005-11-16 | 2009-06-16 | Emcore Corporation | Method of protecting semiconductor chips from mechanical and ESD damage during handling |
JP2007287757A (ja) * | 2006-04-12 | 2007-11-01 | Rohm Co Ltd | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
US9318472B1 (en) * | 2014-10-30 | 2016-04-19 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode lighting device |
US9343633B1 (en) * | 2014-10-31 | 2016-05-17 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode lighting device |
US9680077B1 (en) | 2016-07-20 | 2017-06-13 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode lighting device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
GB9914801D0 (en) * | 1999-06-25 | 1999-08-25 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
-
2004
- 2004-07-21 TW TW093121797A patent/TWI234299B/zh not_active IP Right Cessation
- 2004-12-06 JP JP2004352338A patent/JP3935175B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-07 KR KR1020050011502A patent/KR100678380B1/ko not_active IP Right Cessation
- 2005-04-14 US US11/105,402 patent/US7301272B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20060041859A (ko) | 2006-05-12 |
KR100678380B1 (ko) | 2007-02-02 |
JP2006032889A (ja) | 2006-02-02 |
US20060017372A1 (en) | 2006-01-26 |
TW200605382A (en) | 2006-02-01 |
TWI234299B (en) | 2005-06-11 |
US7301272B2 (en) | 2007-11-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100631898B1 (ko) | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 | |
US8217417B2 (en) | Antistatic gallium nitride based light emitting device and method for fabricating the same | |
US6593597B2 (en) | Group III-V element-based LED having ESD protection capacity | |
US8283188B2 (en) | Method for fabricating light emitting diode chip | |
JP2006210879A (ja) | Esd保護用ledを具備した窒化ガリウム系発光素子及びその製造方法 | |
US8237192B2 (en) | Light emitting diode chip with overvoltage protection | |
US20230361248A1 (en) | Light-emitting device | |
EP2219235B1 (en) | Light emitting device package | |
US8482034B2 (en) | Light emitting device | |
CN112382711A (zh) | 发光二极管器件及其制备方法 | |
KR100649642B1 (ko) | Esd 보호 소자를 구비한 화합물 반도체 발광 소자 및 그제조 방법 | |
KR100678380B1 (ko) | 발광소자 및 그 제조방법 | |
CN212750919U (zh) | 倒装led芯片 | |
JP2000315819A (ja) | 半導体発光素子の製法 | |
CN212750918U (zh) | 倒装led芯片 | |
US10263093B2 (en) | Optoelectronic semiconductor device and fabrication method thereof | |
KR20060018988A (ko) | Ⅲ-질화물 반도체 발광소자 | |
TW202345419A (zh) | 發光元件 | |
TW201421729A (zh) | 發光二極體結構及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20060525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060912 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20061019 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061205 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070227 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070316 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 3935175 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20081117 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100330 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A072 Effective date: 20090519 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100330 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100330 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110330 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120330 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130330 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130330 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140330 Year of fee payment: 7 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |