JP3837401B2 - Manufacturing method of thin film magnetic head - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a thin film magnetic head in which a recording head is laminated on a reproducing head, and in particular, heat generated from a coil layer or the like is efficiently released from a rear region to a slider from a magnetoresistive effect element. The present invention relates to a method for manufacturing a thin film magnetic head.
[0002]
[Prior art]
FIG. 10 is a longitudinal sectional view of a conventional composite thin film magnetic head in which a reproducing head and a recording head are stacked. The X direction in the figure indicates the track width direction, and the Y direction in the figure indicates the height direction. Here, reference numeral 1 denotes a lower shield layer, reference numeral 2 denotes a magnetoresistive element, reference numeral 3 denotes a gap layer, reference numeral 4 denotes an upper shield layer, reference numeral 5 denotes a separation layer, reference numeral 6 denotes a lower core layer, reference numeral Reference numeral 7 denotes a coil layer, reference numeral 8 denotes an insulating layer, and reference numeral 9 denotes an upper core layer.
[0003]
The composite thin film magnetic head in FIG. 10 comprises a reproducing head with each layer from the lower shield layer 1 to the upper shield layer 4, and a recording head with each layer from the lower core layer 6 to the upper core layer 9, This structure is called a piggyback type in which a separation layer 5 is interposed between the reproducing head and the recording head.
[0004]
Thin film magnetic heads have been increasingly reduced in size with the recent increase in recording density, and one of the problems that must be solved in such circumstances is the problem of heat dissipation. In the thin film magnetic head shown in FIG. 10, heat is generated by a recording current flowing through the coil layer 7. Therefore, it is necessary to efficiently release this heat to the outside. When heat is applied to the thin film magnetic head, the inside of the thin film magnetic head becomes high temperature, destroying the magnetoresistive effect element 2 and deteriorating the reproduction characteristics, or due to a difference in thermal expansion coefficient, the portion of the recording head is This is because it protrudes more than other parts, and this causes many problems such as the thin film magnetic head colliding on the recording medium.
[0005]
Therefore, conventionally, an attempt has been made to separate a predetermined layer constituting the thin film magnetic head at a position away from the surface facing the recording medium in the height direction, and to use the separated height side layer as a heat dissipation layer. Yes.
[0006]
For example, in FIG. 11, the lower core layer 6 is formed separately, and a heat dissipation layer 10 extending in the height direction from a position spaced a predetermined distance in the height direction from the height-side rear end surface 6 a of the lower core layer 6 is provided. .
[0007]
However, in the structure shown in FIG. 11, when the heat generated from the coil layer 7 is transmitted to the lower core layer 6, this heat temporarily passes through the insulating layer 11 interposed between the lower core layer 6 and the heat dissipation layer 10. Since heat is transmitted to the heat dissipation layer 10, heat cannot be directly released to the heat dissipation layer 10, and part of the heat is also guided to the upper shield layer 4 below the lower core layer 6. End up. When heat is transmitted to the upper shield layer 4, the magnetoresistive element 2 underneath is inevitably deteriorated in the reproduction characteristics due to the influence of the heat.
[0008]
In the structure shown in FIG. 12, the upper shield layer 4 is formed separately, and a heat radiating layer 12 extending in the height direction from a position away from the height side rear end face 4a of the upper shield layer 4 in the height direction is provided. It has been.
[0009]
A lower core layer 6 extending in the height direction from above the upper shield layer 4 is interposed between the upper shield layer 4 and the heat dissipation layer 12 and is further extended to the heat dissipation layer 12. Formed.
[0010]
In the structure of FIG. 12, since the lower core layer 6 is not formed separately as shown in FIG. 11, but extends to the heat dissipation layer 12, the heat transferred to the lower core layer 6 is transmitted to the lower core layer 6. It was expected that the inside of the layer 6 was directly transmitted to the rear in the height direction and efficiently transmitted from the lower core layer 6 to the heat dissipation layer 12.
[0011]
However, in the structure of FIG. 12, the lower core layer 6 is bent into the space between the upper shield layer 4 and the heat dissipation layer 12. The shield layer 4 becomes too close to the distance, and heat from the lower core layer 6 is easily transmitted to the upper shield layer 4. As a result, the magnetoresistive effect element 2 is inevitably lowered in reproduction characteristics due to the influence of the heat.
[0012]
The thin film magnetic head shown in FIG. 13 is a partial longitudinal sectional view showing a simplified structure of the thin film magnetic head described in FIG. 9 of Patent Document 1 shown below.
[0013]
In FIG. 13, a heat radiation layer 13 extending in the height direction from a position away from the height side rear end face 4 a of the upper shield layer 4 in the height direction is provided, and within the distance D between the upper shield layer 4 and the heat radiation layer 13. Are filled with the same insulating layer as the insulating layer (separation layer) 14 covering the upper surface 4 b of the upper shield layer 4.
[0014]
The upper surface 14a of the insulating layer 14 and the upper surface 13a of the heat dissipation layer 13 are formed with the same flat surface, and the insulating layer 14 is formed of alumina or the like.
[0015]
In the structure of the thin film magnetic head shown in FIG. 13, the lower core layer 6 is not bent into the space D between the upper shield layer 4 and the heat dissipation layer 13 as shown in FIG. It is formed from the upper surface 14 a of the layer 14 to the upper surface 13 a of the heat dissipation layer 13.
[0016]
For this reason, the heat conducted in the lower core layer 6 can easily escape to the heat radiation layer 13 on the height side of the upper shield layer 4 as compared with the structure of FIG. 12, and the heat is a region behind the shield layer in the height direction. It was expected that it could escape to the outside properly.
[0017]
[Patent Document 1]
JP 2002-216314 A
[0018]
[Problems to be solved by the invention]
However, the thin film magnetic head having the structure shown in FIG. 13 has the following problems in terms of manufacturing method.
[0019]
FIG. 14 is a process diagram (partial longitudinal sectional view) showing a state in the middle of manufacturing the thin film magnetic head shown in FIG.
[0020]
As shown in FIG. 14, the upper shield layer 4 and the heat dissipation layer 13 are separately formed on the gap layer 3 with a gap D, and then the upper shield layer 4 and the heat dissipation layer 13 and further the gap D. An insulating layer 14 is formed inside by sputtering. In this step, the space D is filled with the insulating layer 14.
[0021]
Next, the insulating layer 14 and the heat dissipation layer 13 are cut down to the CC line using, for example, a CMP technique. At this time, the upper surface of the upper shield layer 4 is not exposed, and the insulating layer 14 provided on the upper shield layer 4 needs to have a certain thickness even by the grinding process.
[0022]
By the grinding process, the upper surface 14a of the insulating layer 14 and the upper surface 13a of the heat dissipation layer 13 are made the same flat surface.
[0023]
Here, the upper shield layer 4 and the heat dissipation layer 13 are plated and formed with relatively thick layers. For this reason, it takes a long film formation time to appropriately embed the insulating layer 14 in the gap D by the sputtering method or the like, and the film formation time becomes longer, so that the upper surfaces of the upper shield layer 4 and the heat radiation layer 13 are increased. The thickness of the insulating layer 14 formed on 4b and 13a is also increased.
[0024]
As a result, a considerable amount of the insulating layer 14 needs to be scraped off even when the planarization process is performed by the CMP technique, and the grinding process takes time.
[0025]
In addition, if the upper shield layer 4 and the heat dissipation layer 13 formed by plating are formed with a uniform film thickness in all regions, the thickness varies. Further, the upper surface of the insulating layer 14 formed on the upper surface 4b of the upper shield layer 4 before the CMP process, the upper surface of the insulating layer 14 formed on the upper surface 13a of the heat radiation layer 13, and the insulating layer 14 filling the gap D. The top surface of is wavy, not the same height.
[0026]
Moreover, as described above, the surface of the upper shield layer 4 must not be exposed by the grinding process, and the insulating layer 14 needs to be left on the upper shield layer 4 with a certain thickness. There is. This is because the upper shield layer 4 and the lower core layer 6 are magnetically connected, and heat absorbed by the lower core layer 6 is easily transmitted to the upper shield layer 4.
[0027]
In this way, the thickness of each layer is not uniform, and it is necessary to perform the grinding process under various constraints, so a highly accurate grinding process is required, and defective products are easily produced, resulting in a decrease in yield. It leads to.
[0028]
For this reason, it is desirable that grinding is not necessary when the space between the upper shield layer 4 and the heat dissipation layer 13 is filled with an insulating layer.
[0029]
Therefore, the present invention is to solve the above-described conventional problems, and in particular, the shield layer and the metal layer can be filled with a simpler and more appropriate method than before, and the heat dissipation effect can be improved as compared with the prior art. It is an object of the present invention to provide a method for manufacturing a thin film magnetic head capable of performing the above.
[0030]
[Means for Solving the Problems]
  In the present invention, a reproducing head having a lower shield layer, an upper shield layer, and a magnetoresistive effect element sandwiched between both shield layers is provided on a substrate, and the lower core layer and the upper core are provided on the reproducing head. In a method of manufacturing a thin film magnetic head in which recording heads having a layer and a coil layer are laminated,
(A)Al ₂ O ₃ Or SiO ₂ Forming the upper shield layer on the upper gap layer comprising:The upper shield layerofFrom the position away from the height side rear end face by a predetermined distance in the height direction toward the height directionFirstForming a metal layer;
(B) saidUpper partShield layer and the aboveFirstWithin an interval between metal layers1st made of resist materialForming an organic insulating layer;
(C) saidFirstBefore or after forming the organic insulating layer,Upper partOn the shield layer andFirstOn the metal layerAl ₂ O ₃ Or SiO ₂ Separation consisting ofForming a layerAnd forming the lower core layer on the separation layerAnd a process of
  It is characterized by having.
[0031]
  In the present invention, as described aboveUpper partBehind the shield layer, in the height direction,Upper partFrom a position spaced a predetermined distance from the shield layerFirstForming a metal layer, saidUpper partShield layerFirstBetween the metal layersFirstFill with organic insulating layer.
[0032]
  And saidFirstBefore or after forming the organic insulating layer,Upper partThe top surface of the shield layer andThe firstThe top surface of the metal layerAl ₂ O ₃ Or SiO ₂ Consist ofInorganic insulation layer(Separation layer)Cover with.
[0033]
  According to the above manufacturing method, the above-described manufacturing method can be appropriately performed without the need for grinding by CMP technology or the like as in the prior art.Upper partShield layerFirstInsulation layer (in the space between metal layers)FirstThe upper surface of the shield layer and the upper surface of the metal layer can be filled with an insulating layer (organic insulating layer).SeparationLayer).
[0034]
  SaidFirstFor organic insulation layerHaGist material is used.SaidIf a resist material is used, the resist can be appropriately embedded in the interval by a resist coating process and an exposure development process.
[0035]
For this reason, it is only necessary to form an inorganic insulating layer having a required thickness on the upper surface of the shield layer and the upper surface of the metal layer.
[0036]
Conventionally, since the same inorganic insulating material is used for the insulating layer that covers the upper surfaces of the shield layer and the metal layer and the insulating layer that fills the gap between the shield layer and the metal layer, it must be within a deep gap. Prioritizing filling, it was necessary to form an inorganic insulating layer until the gap was filled. For this reason, an insulating layer having a thickness greater than that required on the upper surfaces of the shield layer and the metal layer is formed. Conventionally, the insulating layer formed on the upper surface of the shield layer and the metal layer is shaved by grinding to adjust to a predetermined film thickness. In the present invention, the shield layer and the metal layer are spaced from each other. When the inorganic insulating layer covering the upper surface of the shield layer and the upper surface of the metal layer is formed, the space between the shield layer and the metal layer is filled. The inorganic insulating layer may be formed considering only the film thickness necessary for the above.
[0037]
Therefore, the present invention does not require grinding as in the prior art.
Therefore, in the present invention, it is possible to easily perform the process of filling the space formed between the shield layer and the metal layer with the insulating layer as compared with the conventional case, and to appropriately fill the space with the insulating layer.
[0038]
Also, if the space between the shield layer and the metal layer is filled with an organic insulating layer, heat is guided from the metal layer to the shield layer as compared with the case where the space is filled with an inorganic insulating layer. It can be suppressed appropriately. This is because the organic insulating layer generally has a lower thermal conductivity than the inorganic insulating layer.
[0040]
In the present invention, even if the lower core layer is formed to extend from above the upper shield layer to above the first organic insulating layer and above the first metal layer in the next step, Since the space between the metal layers is appropriately filled with the first organic insulating layer, a part of the lower core layer is spaced between the upper shield layer and the first metal layer as in the prior art (FIG. 12). It does not bend and enter within the specified interval.
[0041]
As described above, in the present invention, the lower core layer is extended above the first metal layer by embedding and forming the first organic insulating layer in the space between the upper shield layer and the first metal layer. Even if formed, the heat absorbed by the lower core layer in the vicinity of the gap can be appropriately suppressed from being transferred to the upper shield layer, and the lower core layer can be extended above the first metal layer. As a result, heat can be appropriately guided from the lower core layer to the first metal layer, and a thin film magnetic head excellent in heat dissipation can be manufactured.
[0043]
  In the present invention,Prior to the step (a),
(A) forming a second metal layer in a height direction from a position away from the height side rear end surface of the lower shield layer by a predetermined distance in the height direction;
(B) forming a second organic insulating layer made of a resist material in an interval spaced between the lower shield layer and the second metal layer;
(C) Before or after forming the second organic insulating layer, Al is formed on the lower shield layer and the second metal layer. ₂ O ₃ Or SiO ₂ Forming a lower gap layer comprising:
(D) forming the magnetoresistive element on the lower gap layer;
(E) Al on the magnetoresistive element and the lower gap layer ₂ O ₃ Or SiO ₂ Forming an upper gap layer comprising:
It is preferable to carry out.
In the present invention, in the step (a), the first metal layer is located at a position away from the upper shield layer by a predetermined distance in the height direction.When forming the lower shield layer andSaidAn interval between the second metal layers and the upper shield layer;SaidBetween the first metal layersRuIt is preferable that the distance is opposed in the film thickness direction.
[0044]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a partial vertical view showing the structure of the thin film magnetic head according to the first embodiment of the present invention.
[0045]
In the following, the X direction shown in the figure is called the track width direction, and the Y direction shown in the figure is called the height direction. The Z direction shown in the figure is the traveling direction of the recording medium (magnetic disk). Further, the front end surface (the leftmost surface shown in FIG. 1) of the thin film magnetic head is referred to as “a surface facing the recording medium”. Further, in each layer, “front end surface (front end portion)” refers to the left surface in FIG. 1 and “rear end surface (rear end portion)” refers to the right surface in FIG.
[0046]
A thin film magnetic head described with reference to the drawings is a thin film magnetic head in which a recording head portion (also referred to as an inductive head) and a reproducing head portion (also referred to as an MR head) are combined.
[0047]
Reference numeral 20 denotes alumina titanium carbide (Al₂O_Three-TiC) or the like, and an underlayer 21 is formed on the slider 20. The underlayer 21 is made of Al.₂O_ThreeFormed of an insulating material.
[0048]
As shown in FIG. 1, a lower shield layer 22 made of NiFe alloy or sendust is formed on the underlayer 21 from the surface facing the recording medium in the height direction (Y direction in the figure). Yes.
[0049]
As shown in FIG. 1, a second metal layer 23 formed on the under layer 21 is formed extending in the height direction at a predetermined interval T1 from the rear end face 22a of the lower shield layer 22 in the height direction. .
[0050]
The second metal layer 23 may be formed of a magnetic material as in the case of the lower shield layer 22, or may be formed of a nonmagnetic conductive material. Since the second metal layer 23 functions as a heat dissipation layer that conducts heat to the slider 20, it is preferable that the second metal layer 23 be formed of a nonmagnetic conductive material having good thermal conductivity.
[0051]
The lower shield layer 22 and the second metal layer 23 are both plated.
[0052]
As shown in FIG. 1, the space between the rear end surface 22a of the lower shield layer 22 and the front end surface 23a of the second metal layer 23 is Al.₂O_ThreeThe upper surface of the lower shield layer 22, the upper surface of the second metal layer 23, and the upper surface of the embedded layer 24 are substantially the same planarized surface.
[0053]
As shown in FIG. 1, Al is formed on the lower shield layer 22, the buried layer 24, and the second metal layer 23.₂O_ThreeA gap layer 25 made of a lower gap layer or an upper gap layer made of an insulating material such as is formed.
[0054]
A magnetoresistive element 26 typified by a GMR element such as a spin valve thin film element is formed in the gap layer 25, and the front end surface of the magnetoresistive element 26 is exposed from the surface facing the recording medium. ing.
[0055]
An upper shield layer 27 made of NiFe alloy or the like is formed on the gap layer 25.
[0056]
The upper shield layer 27 is formed to extend in the height direction from the surface facing the recording medium, and is separated from the upper shield layer 27 behind the rear end surface 27a of the upper shield layer 27 in the height direction. A metal layer 28 is formed.
[0057]
A predetermined interval T <b> 2 is provided between the rear end surface 27 a of the upper shield layer 27 and the front end surface 28 a of the first metal layer 28. The surface of the gap layer 25 is exposed from the interval T2.
[0058]
The first metal layer 28 may be formed of a magnetic material as with the upper shield layer 27, or may be formed of a nonmagnetic conductive material. Since the first metal layer 28 functions as a heat dissipation layer that guides heat toward the slider 20, the first metal layer 28 is preferably formed of a nonmagnetic conductive material having good thermal conductivity.
[0059]
Both the upper shield layer 27 and the first metal layer 28 are plated.
[0060]
Note that the above-described height position from the lower shield layer 22 to the upper shield layer 27 is called a reproducing head (also referred to as an MR head).
[0061]
As shown in FIG. 1, a separation layer 29 is formed on the upper shield layer 27, the gap layer 25 exposed in the interval T2, and the first metal layer 28. The separation layer 29 is made of Al.₂O_ThreeAnd SiO₂It is made of an inorganic insulating material.
[0062]
The separation layer 29 is provided in order to magnetically separate the reproducing head formed under the separation layer 29 and the recording head formed over the separation layer 29.
[0063]
As shown in FIG. 1, a first organic insulating layer 30 is formed in the interval T2. The first organic insulating layer 30 will be described in detail later.
[0064]
As shown in FIG. 1, the separation layer 29 made of an inorganic insulation material formed on the upper shield layer 27, the first organic insulation layer 30, and further the first metal layer 28. A lower core layer 31 is formed on the separation layer 29. The lower core layer 31 is made of a magnetic material such as a NiFe alloy.
[0065]
As shown in FIG. 1, the upper surface 31a of the lower core layer 31 is a planarized surface. In the embodiment shown in FIG. 1, since the upper surface of the first organic insulating layer 30 slightly protrudes from the upper surfaces of the upper shield layer 27 and the first metal layer 28, the lower portion located on the first organic insulating layer 30 is used. The thickness of the core layer 31 is slightly smaller than the thickness of the lower core layer 31 located on the upper shield layer 27 and the first metal layer 28.
[0066]
As shown in FIG. 1, a raised layer 34 having a predetermined length dimension is formed on the lower core layer 31 from the surface facing the recording medium in the height direction (Y direction in the drawing). Further, a back gap layer 35 is formed on the lower core layer 31 at a position away from the rear end face in the height direction of the raised layer 34 in the height direction (Y direction in the drawing).
[0067]
The raised layer 34 and the back gap layer 35 are made of a magnetic material, and may be made of the same material as the lower core layer 31 or may be made of a different material. Further, the raised layer 34 and the back gap layer 35 may be a single layer or may be formed of a multilayer structure. The raised layer 34 and the back gap layer 35 are magnetically connected to the lower core layer 31.
[0068]
As shown in FIG. 1, a coil insulating base layer 36 is formed on the lower core layer 31 between the raised layer 34 and the back gap layer 35 and on the lower core layer 31 located behind the back gap layer 35 in the height direction. A coil layer 37 is formed on the coil insulating base layer 36. The coil layer 37 is formed by spirally winding the coil insulating base layer 36 around the back gap layer 35. The coil layer 37 is made of a nonmagnetic conductive material such as Cu.
[0069]
As shown in FIG. 1, the coil layer 37 is made of Al.₂O_ThreeThe coil insulating layer 38 is made of an inorganic insulating material such as. As shown in FIG. 1, the upper surface of the raised layer 34, the upper surface of the coil insulating layer 38, and the upper surface of the back gap layer 35 are the same flat surface.
[0070]
As shown in FIG. 1, on the flattened surfaces of the raised layer 34 and the coil insulating layer 38, a predetermined distance away from the surface facing the recording medium in the height direction (Y direction in the drawing) is directed in the height direction. Thus, a Gd determining layer 39 is formed.
[0071]
Further, as shown in FIG. 1, on the raised layer 34 from the surface facing the recording medium to the front end surface of the Gd determining layer 39, on the coil insulating layer 38 in the height direction from the rear end surface of the Gd determining layer 39, and A lower magnetic pole layer 40 and a gap layer 41 are formed on the back gap layer 35 from below. The lower magnetic pole layer 40 and the gap layer 41 are formed by plating. The dimension of the gap layer 41 in the height direction is determined by the Gd determining layer 39.
[0072]
Further, as shown in FIG. 1, an upper magnetic pole layer 42 is formed on the gap layer 41 and the Gd determining layer 39 by plating, and an upper core layer 43 is formed on the upper magnetic pole layer 42 by plating.
[0073]
In this embodiment, a magnetic pole layer 44 is constituted by four layers of the lower magnetic pole layer 40, the gap layer 41, the upper magnetic pole layer 42 and the upper core layer 43.
[0074]
As shown in FIG. 1, on the upper core layer 43, for example, Al₂O_ThreeA protective layer 45 made of an insulating material such as is formed. The protective layer 45 is also formed on the coil insulating layer 38 extending in the height direction from the rear end face of the upper core layer 43. The protective layer 45 is made of Al.₂O_ThreeAnd SiO₂It is preferable to be formed of an inorganic insulating material such as.
[0075]
A recording head (inductive head) is constituted by the layers including the lower core layer 31, the coil layer 37, the raised layer 34, the back gap layer 35, and the pole layer 44 described above.
[0076]
FIG. 3 is an enlarged partial longitudinal sectional view of the thin film magnetic head shown in FIG. In FIG. 3, layers above the lower core layer 31 are omitted in the drawing. As shown in FIG. 3, a gap T <b> 2 is provided between the rear end surface 27 a of the upper shield layer 27 and the front end surface 28 a of the first metal layer 28. Specifically, the interval T2 is preferably formed within a range of 2 μm to 6 μm. With the interval T2 of this degree, the heat absorbed by the lower core layer 31 is appropriately transferred to the first metal layer 28, and the heat is transferred from the first metal layer 28 through the interval T2 to the upper shield layer 27. It is hard to be transmitted to.
[0077]
In FIG. 3, the upper shield layer 27 and the first metal layer 28 are formed at the same height in the drawing, but need not be formed at the same height. The upper shield layer 27 and the first metal layer 28 are formed to a thickness of about 0.8 to 2.0 μm.
[0078]
As shown in FIG. 3, a separation layer 29 made of an inorganic insulating material extends from the upper surface 27b of the upper shield layer 27 to the upper surface 25a of the gap layer 25 exposed within the interval T2 and the upper surface 28b of the first metal layer 28. A film is formed by sputtering or the like.
[0079]
The isolation layer 29 is formed with a predetermined film thickness on the upper surface 27b of the upper shield layer 27 and the upper surface 28b of the first metal layer 28. Compared to this, the rear end surface 27a of the upper shield layer 27 in the interval T2 is formed. In addition, the thickness of the separation layer 29 adhering to the front end surface 28a of the first metal layer 28 becomes thin due to the shadow effect, or some portions do not adhere.
[0080]
The thickness of the separation layer 29 is in the range of 0.2 μm to 0.4 μm at the portions formed on the upper surfaces 27 b and 28 b of the upper shield layer 27 and the first metal layer 28. Since the separation layer 29 is provided to suppress magnetic interference between the reproducing head and the recording head, if the thickness of the separation layer 29 is too thin than the above range. Problems such as magnetic interference occur, and if the separation layer 29 is too thick than the above range, it is difficult for heat to be guided from the lower core layer 31 to the first metal layer 28, and heat is likely to flow inside the recording head. Therefore, the separation layer 29 is preferably formed with a film thickness in the above range.
[0081]
As shown in FIG. 3, a first organic insulating layer 30 is embedded in the interval T2. Examples of the first organic insulating layer 30 include a resist material (photosensitive resin) and photosensitive polyimide.
[0082]
The first organic insulating layer 30 is formed on the separation layer 29 in the interval T2. However, in the portion where the separation layer 29 does not adhere in the interval T2, as described above, the first organic insulating layer 30 is formed. 30 is formed in direct contact with the rear end surface 27 a of the upper shield layer 27 and the front end surface 28 a of the first metal layer 28.
[0083]
In FIG. 3, the upper surface 30 a of the first organic insulating layer 30 is formed at a position higher than the upper surface 29 a of the separation layer 29 formed on the upper surface 27 b of the upper shield layer 27 and the upper surface 28 b of the first metal layer 28. However, the upper surface 30b of the first organic insulating layer 30 may be lower than the upper surface 29a of the separation layer 29, for example, as indicated by the dotted line in FIG. The protrusion amount and the recess amount of the upper surfaces 30a and 30b of the first organic insulating layer 30 as viewed from the upper surface 29a of the separation layer 29 are preferably in the range of +1.5 μm to −1.0 μm.
[0084]
In the embodiment shown in FIG. 3, the heat absorbed by the first metal layer 28 is easily transferred to the second metal layer 23 under the first metal layer 28, while the first metal layer 28 Heat is less likely to be transmitted from 28 to the upper shield layer 27. This is because the space T 2 between the upper shield layer 27 and the first metal layer 28 is filled with the first organic insulating layer 30. The first organic insulating layer 30 generally has a lower thermal conductivity than an inorganic insulating material. Therefore, the heat from the first metal layer 28 is not transferred to the upper shield layer 27 via the first organic insulating layer 30 but rather to the second via the gap layer 25 of the inorganic insulating material below the first metal layer 28. The heat easily transmitted to the metal layer 23 and transferred to the second metal layer 23 follows a heat transfer path for escaping to the slider 20 through the underlayer 21 of the inorganic insulating material.
[0085]
As described above, by forming the first organic insulating layer 30 between the rear end surface 27a of the upper shield layer 27 and the front end surface 28a of the first metal layer 28, the heat transferred to the first metal layer 28 is It is possible to suppress the lead from the first metal layer 28 to the upper shield layer 27, and as a result, it is possible to suppress the influence of heat on the magnetoresistive effect element 26 below the upper shield layer 27. It is possible to maintain good reproduction characteristics. In addition, the amount of protrusion of the head from the surface facing the recording medium can be suppressed.
[0086]
In the embodiment shown in FIG. 3, the lower shield layer 22 and the second metal layer 23 are separately formed, and a gap T <b> 1 is formed between the rear end surface 22 a of the lower shield layer 22 and the front end surface 23 a of the second metal layer 23. It is vacant. This interval T1 is provided at a position opposite to the interval T2 between the upper shield layer 27 and the first metal layer 28 in the film thickness direction (Z direction in the drawing).
[0087]
In the embodiment shown in FIG. 3, the length dimension of the interval T1 in the height direction is smaller than the length dimension of the interval T2 in the height direction, but the same dimension may be used. The length dimension in the height direction may be larger than the length dimension in the height direction of the interval T2.
[0088]
The length of the interval T1 in the height direction is in the range of 1.5 μm to 6 μm. As described above, since the length dimension in the height direction of the interval T2 is in the range of 1.5 μm to 8 μm, the difference in length between the intervals T1 and T2 is small. As a result, the height direction of the lower shield layer 22 is reduced. The length dimension in the height direction of the upper shield layer 27 is substantially the same.
[0089]
FIG. 2 is a partial perspective view schematically showing the lower shield layer 22, the magnetoresistive effect element 26 and the upper shield layer 27. As shown in FIG. 2, the length dimension of the lower shield layer 22 in the height direction is L3, specifically 10 μm to 30 μm, and the length dimension of the upper shield layer 27 in the height direction is specifically L4. The width of the lower shield layer 22 in the track width direction is T3, specifically 50 μm to 100 μm, and the width of the upper shield layer 27 in the track width direction is T3. T4 is specifically 49 μm to 99 μm, the thickness of the lower shield layer 22 is H1, specifically 0.8 μm to 2.0 μm, and the thickness of the upper shield layer 27 is H2 specifically. Is in the range of 0.8 μm to 2.0 μm.
[0090]
Thus, the lower shield layer 22 and the upper shield layer 27 are formed with substantially the same size. As a result, a QST (Quasi Static Test) curve, which is one of the evaluations of the output characteristics of the thin film magnetic head, can be obtained with a clean waveform.
[0091]
The QST curve is obtained by applying a constant current to the lead terminal of the magnetoresistive element 26 and applying an external magnetic field to the thin film magnetic head to measure the output characteristics of the thin film magnetic head. 15 is expressed as an RH characteristic graph shown in FIG.
[0092]
The QST curve shown in FIG. 15 is schematically shown and draws a clean and smooth curve. The present invention aims to obtain such a clean QST curve, and in order to obtain a clean QST curve, it is necessary that the lower shield layer 22 and the upper shield layer 27 be formed with substantially the same size. is there.
[0093]
If a clean QST curve as shown in FIG. 15 can be obtained, it becomes easy to appropriately evaluate the output characteristics of the thin film magnetic head, and the yield can be improved.
[0094]
FIG. 4 is a partially enlarged longitudinal sectional view of a thin film magnetic head according to another embodiment of the present invention. In FIG. 4, each layer formed above the lower core layer 31 is not shown, but is omitted because it has the same configuration as FIG. 1.
[0095]
In the thin film magnetic head shown in FIG. 4, the first organic insulating layer 30 is embedded between the rear end face 27a of the upper shield layer 27 and the front end face 28a of the first metal layer 28, as in the thin film magnetic head shown in FIG. The same in this respect.
[0096]
In the thin film magnetic head shown in FIG. 4, the second organic insulating layer 52 is embedded in a space T <b> 1 spaced between the rear end surface 22 a of the lower shield layer 22 and the front end surface 23 a of the second metal layer 23.
[0097]
As shown in FIG. 4, a lower gap layer 50 is formed by sputtering or the like from the upper surface 22b of the lower shield layer 22 to the under layer 21 exposed within the interval T1 and the upper surface 23b of the second metal layer 23. . Similar to the separation layer 29 described with reference to FIG. 3, the lower gap layer 50 has a thin film thickness due to a shadow effect on the rear end surface 22 a of the lower shield layer 22 and the front end surface 23 a of the second metal layer 23, or There are some places where no film is formed.
[0098]
The second organic insulating layer 52 is formed through the lower gap layer 50 within the interval T1. The second organic insulating layer 52 is formed of a resist material (photosensitive resin) or the like, similar to the first organic insulating layer 30, and Al₂O_ThreeAnd SiO₂It is a material with low thermal conductivity compared to inorganic insulating materials such as.
[0099]
As shown in FIG. 4, the upper gap layer 51 formed on the lower gap layer 50 is formed on the second organic insulating layer 52 in the second organic insulating layer 52. This is because the lower gap layer 50, the second organic insulating layer 52, and the upper gap layer 51 are formed in this order. For example, the layers in the order of the lower gap layer 50, the upper gap layer 51, and the second organic insulating layer 52 are formed. When the film is formed, the upper gap layer 51 is formed under the second organic insulating layer 52.
[0100]
In the embodiment shown in FIG. 4, the heat that has reached the first metal layer 28 is less likely to be transmitted in the direction of the upper shield layer 27 due to the presence of the first organic insulating layer 30, whereas from the first organic insulating layer 30. However, it is easy to be transmitted to the second metal layer 23 through the gap layer 25 made of an inorganic material having high thermal conductivity. In addition, the heat that has reached the second metal layer 23 is less likely to be transmitted from the second metal layer 23 toward the lower shield layer 22 due to the presence of the second organic insulating layer 52, while it is more thermally conductive than the second organic insulating layer 52. It is easy to be guided to the slider 20 through the underlayer 21 of the inorganic insulating material having a high rate.
[0101]
As a result, in the form of the thin film magnetic head shown in FIG. 4, heat can be more effectively released to the slider 20 from the metal layers 23 and 28 in the area in the rearward direction of the shield layers 22 and 27. It is possible to manufacture a thin film magnetic head that can reduce the influence of heat on the resistance effect element 26 and has excellent reproduction characteristics. In addition, the amount of protrusion of the head from the surface facing the recording medium can be suppressed.
[0102]
Next, a method for manufacturing the thin film magnetic head shown in FIG. 1 will be described. 5 to 9 are partially enlarged longitudinal sectional views showing manufacturing steps of the thin film magnetic head shown in FIG. In addition, a process drawing is a manufacturing method from an under layer to a lower core layer, and the manufacturing method of each layer above it is abbreviate | omitted.
[0103]
In the step shown in FIG. 5, an underlayer 21 is formed on a slider (substrate) 20 made of alumina-titanium carbide or the like. For example, the underlayer 21 is made of Al.₂O_ThreeHowever, other inorganic insulating materials may be used, and a multilayer structure of inorganic insulating materials may be used.
[0104]
Next, a plating underlayer (not shown) made of NiFe alloy or the like is formed on the underlayer 21 by sputtering or vapor deposition, and a lower shield layer 22 and a second metal layer 23 are formed on the plating underlayer. A resist layer (not shown) having a space at a position to be formed is formed by exposure and development, and the lower shield layer 22 is formed by plating in the space where the lower shield layer 22 is to be formed. Similarly, the second metal layer 23 is plated at a position where the second metal layer 23 is to be formed. When the resist layer is formed with a space where the lower shield layer 22 and the second metal layer 23 are to be formed, the lower shield layer 22 and the second metal layer 23 are formed in the same process. Since the same material can be used for plating, the process is simplified. In such a case, the second metal layer 23 is also formed of a magnetic material. Therefore, when the second metal layer 23 is formed of a nonmagnetic conductive material, After the resist for forming the lower shield layer 22 and the resist for forming the second metal layer 23 are used separately, for example, the lower shield layer 22 is first plated using the resist for forming the lower shield layer 22. The lower shield layer forming resist is removed, the second metal layer 23 is plated using the second metal layer 23 forming resist, and the second metal layer forming resist is removed.
[0105]
After the lower shield layer 22 and the second metal layer 23 are formed on the underlayer 21 as shown in FIG. 5, the lower shield layer 22 and the first metal layer 23 remain on the underlayer 21 where the lower shield layer 22 and the first metal layer 23 are not formed. The plating base layer is removed by etching or the like.
[0106]
As shown in FIG. 5, a space T <b> 1 is provided between the rear end surface 22 a of the lower shield layer 22 and the front end surface 23 a of the second metal layer 23.
[0107]
Next, as shown in FIG. 5, Al extends from the upper surface 22b of the lower shield layer 22 to the upper surface of the underlayer 21 exposed within the interval T1 and the upper surface 23b of the second metal layer 23.₂O_ThreeAnd SiO₂An inorganic insulating material layer 60 is formed by sputtering or vapor deposition.
[0108]
As shown in FIG. 5, after the inorganic insulating material layer 60 is embedded in the interval T1, the inorganic insulating material layer 60, the lower shield layer 22 and the second metal layer 23 are CMPed to the AA line shown in FIG. By using a technique or the like, the upper surfaces 22b and 23b of the lower shield layer 22 and the second metal layer 23 are exposed, and the inorganic insulating material layer 60 is left only in the interval T1. By this cutting process, the upper surface 22b of the lower shield layer 22, the upper surface 23b of the second metal layer 23, and the upper surface of the inorganic insulating material layer 60 left in the interval T1 become the same flat surface. The inorganic insulating material layer 60 left in the interval T1 is the same as the buried layer 24 shown in FIGS.
[0109]
Next, in the process shown in FIG. 6, the lower gap layer 50 formed of an inorganic insulating material is formed on the upper surface 22b of the lower shield layer 22, the upper surface 24b of the buried layer 24, and the upper surface 23b of the second metal layer 23 by sputtering or the like. A film is formed by vapor deposition.
[0110]
Next, a magnetoresistive effect element 26 is formed in a predetermined region in the height direction from the surface facing the recording medium on the lower gap layer 50, and further, an inorganic insulation is formed from the magnetoresistive effect element 26 to the lower gap layer 50. The upper gap layer 51 made of a material is formed by sputtering or vapor deposition.
[0111]
Next, the upper shield layer 27 and the first metal layer 28 are formed on the upper gap layer 51 by plating. The formation method of these two plating layers is the same as the plating formation method of the lower shield layer 22 and the second metal layer 23.
[0112]
As shown in FIG. 6, the upper shield layer 27 is plated with a predetermined length in the height direction from the surface facing the recording medium. The first metal layer 28 is formed in the height direction with a predetermined interval T2 in the height direction from the rear end surface 27a of the upper shield layer 27.
[0113]
The first metal layer 28 may be formed of the same magnetic material as the upper shield layer 27. However, in order to improve the heat transfer efficiency of the first metal layer 28, the first metal layer 28 is preferably formed of a nonmagnetic metal material. . A method of forming the first metal layer 28 with a material different from that of the upper shield layer 27 has already been described in the plating method of the lower shield layer 22 and the second metal layer 23, and therefore will be omitted.
[0114]
As described above, the interval T1 is provided between the rear end surface 22a of the lower shield layer 22 and the front end surface 23a of the second metal layer 23. The interval T1 is determined by the upper shield layer 27 and the first metal layer. It is preferable that the gap T2 be formed at a position facing the gap T2 between the gaps 28 in the film thickness direction (Z direction in the drawing). Thereby, the length dimension in the height direction from the surface facing the recording medium of the lower shield layer 22 is made substantially equal to the length dimension in the height direction from the surface facing the recording medium of the upper shield layer 27. Thus, the size of the planar shape of the upper shield layer 27 and the lower shield layer 22 can be made substantially equal. As a result, a clean QST curve can be obtained, the output characteristics of the thin film magnetic head can be easily and appropriately evaluated, and the yield can be improved.
[0115]
Next, in the step shown in FIG. 7, from the upper surface 27b of the upper shield layer 27, on the rear end surface 27a of the upper shield layer 27, the upper surface of the upper gap layer 51 exposed in the interval T2, the first metal layer 28. Al on the front end face 28a and the upper face 28b of the first metal layer 28.₂O_ThreeAnd SiO₂A separation layer 29 formed of an inorganic insulating material such as a film is formed by sputtering or vapor deposition.
[0116]
The separation layer 29 is formed with a thickness of 0.2 μm to 0.4 μm on the upper surface 27 b of the upper shield layer 27 and the upper surface 28 b of the first metal layer 28. On the other hand, the separation layer 29 is thinned by the shadow effect on the rear end surface 27a of the upper shield layer 27 and the front end surface 28a of the first metal layer 28, or some portions are not formed.
[0117]
After the separation layer 29 is formed, a resist layer 70 is applied over the entire separation layer 29. The resist layer 70 appropriately fills the recessed space T2.
[0118]
In the process shown in FIG. 8, the resist layer 70 just filling the space T <b> 2 remains in the resist layer 70 by exposure and development, and the other resist layers 70 a are removed. The remaining resist layer 70b becomes the first organic insulating layer 30 in FIG.
[0119]
The remaining upper surface 70b1 of the resist layer 70b is slightly higher or lower than the upper surface 29b of the separation layer 29 formed on the upper surface 27b of the upper shield layer 27 and the upper surface 28b of the first metal layer 28. Yes. The upper surface 70b1 of the resist layer 70b is preferably adjusted so that the height difference is within the range of +1.5 μm to −1.0 μm as compared with the upper surface 29a of the separation layer 29. This adjustment is performed by adjusting the coating amount of the resist layer 70 in the step of FIG. 7 or performing exposure and development processing so that the resist layer 70b remains in the interval T2 as shown in FIG. The heat treatment is performed. When the heat treatment is performed, the surface of the resist layer 70b becomes smooth, and the height dimension can be made slightly lower than that of the resist layer 70b shown in FIG.
[0120]
In the present invention, a resist layer 70b is embedded in a space T2 between the rear end surface 27a of the upper shield layer 27 and the front end surface 28a of the first metal layer 28, and the space T2 is closed by the resist layer 70b. There is a feature point.
[0121]
In this way, by embedding the resist layer 70b in the gap T2 between the rear end surface 27a of the upper shield layer 27 and the front end surface 28a of the first metal layer 28, grinding by CMP technique or the like is performed as in the prior art. Even without processing, the upper surface 27b of the upper shield layer 27, the upper surface 28b of the first metal layer 28 and the interval T1 can be appropriately and easily covered with an insulating layer, thereby simplifying the manufacturing process. It is possible to plan.
[0122]
In the prior art shown in FIG. 13, as shown in FIG. 14, first, an insulating layer 14 made of an inorganic insulating material is formed on the upper shield layer 4, the heat dissipation layer 13, and in the interval D by sputtering or the like. To do.
[0123]
However, at this time, the distance D is relatively deep because the upper shield layer 4 and the heat dissipation layer 13 are formed by plating, and in order to appropriately fill the distance D with the insulating layer 14, A considerably long film formation time was required.
[0124]
As a result, the film thickness of the insulating layer 13 formed on the upper shield layer 4 and the heat dissipation layer 13 is unnecessarily thick. For this reason, conventionally, it is necessary to grind the insulating layer 14 formed on the upper surfaces of the upper shield layer 4 and the heat dissipation layer 13 by grinding until a predetermined film thickness is obtained.
[0125]
On the other hand, in the present invention, the space T2 formed between the upper shield layer 27 and the first metal layer 28 in the step of FIG. 7 is filled with the resist layer 70 instead of the inorganic insulating material. When forming the separation layer (inorganic insulating layer) 29 covering the upper surface 27b of the first metal layer 28 and the upper surface 28b of the first metal layer 28, only a necessary film thickness is considered on the upper shield layer 27 and the first metal layer 28. Then, the separation layer 29 may be formed. Therefore, in the present invention, grinding is not necessary as in the prior art.
[0126]
As described above, in the present invention, it is possible to easily and appropriately perform the embedding process in the interval T2 provided between the upper shield layer 27 and the first metal layer 28 as compared with the conventional case.
[0127]
Further, if the space T2 formed between the upper shield layer 27 and the first metal layer 28 is filled with a resist layer 70b, the first metal layer 28 is compared with the case where the space T2 is filled with an inorganic insulating layer. It is possible to more effectively suppress heat from being led to the upper shield layer 27. Therefore, in the present invention, it is possible to manufacture a thin film magnetic head that is less affected by heat than the conventional magnetoresistive effect element 26 and has excellent heat dissipation.
[0128]
In the present invention, the step of FIG. 9 is performed after the step of FIG. In the step of FIG. 9, after forming a plating base layer (not shown) on the upper surface 29a of the separation layer 29 and the upper surface 70b1 of the resist layer 70b, the lower core layer 31 is patterned by plating.
[0129]
As shown in FIG. 9, since the upper surface 70b1 of the resist layer 70b is slightly higher than the upper surface 29a of the separation layer 29 formed of an inorganic insulating material, it faces the resist layer 70b in the film thickness direction (Z direction in the drawing). The upper surface 31a of the lower core layer 31 at a position where the upper core layer 31 is located is slightly higher than the upper surface 31b of the lower core layer 31 at a position facing the upper shield layer 27 and the first metal layer 28 in the film thickness direction.
[0130]
Next, an insulating layer 80 for filling the periphery of the lower core layer 31 to the same height as the upper surface of the lower core layer 31 is formed on the upper surface of the separation layer 29 at the position where the lower core layer 31 is not formed and After the sputter film is formed on the upper surface of the lower core layer 31, the insulating layer 80 and the lower core layer 31 are ground to the BB line by a CMP technique or the like to obtain the upper surface of the lower core layer 31 and the lower core layer 31. The upper surface of the insulating layer 80 that fills the periphery is made the same flat surface.
[0131]
In the step of FIG. 9, since the resist layer 70 b is embedded in the space T <b> 2 spaced between the upper shield layer 27 and the first metal layer 28, the first metal layer 28 is formed from above the upper shield layer 27. When the lower core layer 31 is formed above the lower core layer 31, the lower core layer 31 is not bent into the interval T2, so that the upper shield layer 27 and the lower core layer 31 are formed near the interval T2. Without approaching the distance, the heat absorbed by the lower core layer 31 can be appropriately suppressed from being transmitted to the upper shield layer 27 in the vicinity of the interval T2. In particular, since the inside of the space T2 is filled with the resist layer 70b, the thermal conductivity in the space T2 is lower than the conventional one, and heat is transferred from the lower core layer 31 to the upper shield layer 27 in the vicinity of the space T2. This can be suppressed more effectively.
[0132]
Further, the upper surface 70b1 of the resist layer 70 and the upper surface 29a of the separation layer 29 are not formed on the same plane, for example, the upper surface 70b1 of the resist layer 70 is slightly higher than the upper surface 29a of the separation layer 29, for example. The difference in height between the upper surfaces is small, and the formation of the lower core layer 31 is not hindered. Also, as shown in FIG. 9, even when the lower core layer 31 is formed, even if there is a undulation on the surface of the lower core layer 31, the upper surface of the lower core layer 31 is processed into a flattened surface by grinding. There is no adverse effect on the film forming accuracy of each layer formed on the lower core layer 31.
[0133]
After the step of FIG. 9, the raised layer 34, the back gap layer 35, the coil layer 37, the pole layer 44, etc. shown in FIG. 1 are formed using an existing manufacturing method.
[0134]
In the method of manufacturing the thin film magnetic head shown in FIG. 4, after the lower shield layer 22 and the second metal layer 23 are formed by plating in the step of FIG. 5, the second metal layer and the second metal layer are separated from the upper surface 22b of the lower shield layer 22 within the interval T1. After forming the lower gap layer 50 of the inorganic insulating material over the upper surface 23b of the film 23 by sputtering, the inside of the space T1 is filled with the resist layer 70b using the same process as the process shown in FIGS. The element 26 is formed, and an upper gap layer 51 made of an inorganic insulating material is formed by sputtering from the magnetoresistive effect element 26 to the lower gap layer 50 and the resist layer 70b.
[0135]
The magnetoresistive effect element 26 may be formed before the resist layer 70b is formed, or after the lower gap layer 50, the magnetoresistive effect element 26, and the upper gap layer 51 are formed, the resist layer 70b is embedded in the interval T1. May be. Thereafter, the same steps as those shown in FIG.
[0136]
As described above, the resist layer 70b is buried and formed not only in the interval T2 between the upper shield layer 27 and the first metal layer 28 but also in the interval T1 between the lower shield layer 22 and the second metal layer 23. Thus, the grinding process described in the process of FIG. 5 is not necessary, and the manufacturing process is further simplified.
[0137]
In FIG. 7, the resist layer 70 is formed after the separation layer 29 made of an inorganic insulating material is formed from the upper shield layer 27 to the interval T2 and the first metal layer 28. On the contrary, after forming the resist layer 70 and filling the space T2 with the resist layer 70b, the upper surface 27b of the upper shield layer 27 extends from the upper surface 70b1 of the resist layer 70b and the upper surface 28b of the first metal layer 28. The separation layer 29 may be formed.
[0138]
Further, although the resist layer 70 is used in FIG. 7, the filling in the interval T2 may be performed using another organic insulating material.
[0139]
In the thin film magnetic head shown in FIGS. 1 and 3, only in the interval T2 formed between the upper shield layer 27 and the first metal layer 28, and in the thin film magnetic head shown in FIG. An organic insulating layer is embedded in both the space T1 formed between the shield layer 22 and the second metal layer 23, but is formed between the lower shield layer 22 and the second metal layer 23. A thin film magnetic head in which an organic insulating layer is embedded only in the interval T1 may be used.
[0140]
As described above, the thin film magnetic head according to the present invention described above is built in a magnetic head device mounted on, for example, a hard disk device. The thin film magnetic head may be incorporated in either a floating magnetic head or a contact magnetic head. The thin film magnetic head can be used for a magnetic sensor or the like in addition to a hard disk device.
[0141]
【The invention's effect】
In the method of manufacturing a thin film magnetic head according to the present invention, a metal layer is formed from a position spaced apart from the shield layer at a predetermined distance behind the shield layer in the height direction, and the shield layer and the metal layer are formed with an organic insulating layer. fill in. Then, before or after forming the organic insulating layer, the upper surface of the shield layer and the upper surface of the metal layer are covered with an inorganic insulating layer.
[0142]
According to the manufacturing method described above, the gap between the shield layer and the metal layer can be appropriately filled with the insulating layer (organic insulating layer) without requiring the grinding process by the CMP technique or the like as in the prior art. The upper surface of the shield layer and the upper surface of the metal layer can be covered with an insulating layer (inorganic insulating layer).
[0143]
Therefore, according to the present invention, it is possible to easily and appropriately perform the filling process in the space formed between the shield layer and the metal layer as compared with the conventional case.
[Brief description of the drawings]
FIG. 1 is a partial longitudinal sectional view showing the structure of a thin film magnetic head according to a first embodiment of the invention,
FIG. 2 is a partial perspective view schematically showing only the upper shield layer, the magnetoresistive effect element, and the lower shield layer shown in FIG.
3 is a partially enlarged longitudinal sectional view of the thin film magnetic head shown in FIG.
FIG. 4 is a partially enlarged longitudinal sectional view showing the structure of a thin film magnetic head according to a second embodiment of the invention,
FIG. 5 is a process diagram showing a manufacturing process of the thin film magnetic head shown in FIG.
FIG. 6 is a process diagram performed next to FIG.
FIG. 7 is a process diagram performed next to FIG.
FIG. 8 is a process diagram performed after FIG. 7;
FIG. 9 is a process diagram performed next to FIG.
FIG. 10 is a partial longitudinal sectional view of a conventional thin film magnetic head;
11 is a partial longitudinal sectional view of a thin film magnetic head having a configuration different from that of FIG.
FIG. 12 is a partial longitudinal sectional view of a thin film magnetic head having a configuration different from those shown in FIGS.
FIG. 13 is a partial longitudinal sectional view of a thin film magnetic head having a configuration different from that shown in FIGS.
14 is a process diagram showing a method of manufacturing the thin film magnetic head shown in FIG.
FIG. 15 is an RH characteristic graph for explaining a QST curve;
[Explanation of symbols]
20 slider
21 Underlayer
22 Lower shield layer
23 Second metal layer
25 Gap layer
26 Magnetoresistive effect element
27 Upper shield layer
28 1st metal layer
29 Separation layer
30 First organic insulating layer
31 Lower core layer
34 Raised layer
35 Back gap layer
37 Coil layer
44 pole layer
52 Second organic insulating layer
70, 70a, 70b resist layer

Claims (3)

A reproducing head having a lower shield layer, an upper shield layer, and a magnetoresistive effect element sandwiched between the shield layers is provided on a substrate, and the lower core layer, the upper core layer, and the coil layer are provided on the reproducing head. In a method of manufacturing a thin film magnetic head in which recording heads having
(A) The upper shield layer is formed on the upper gap layer made of Al ₂ O ₃ or SiO ₂ , and further in the height direction from a position separated by a predetermined distance in the height direction from the height side rear end surface of the upper shield layer. Forming a first metal layer toward the surface;
(B) forming a first organic insulating layer made of a resist material in an interval spaced between the upper shield layer and the first metal layer;
(C) Before or after forming the first organic insulating layer, a separation layer made of Al ₂ O ₃ or SiO ₂ is formed on the upper shield layer and the first metal layer, and the lower portion is formed on the separation layer. Forming a core layer ;
A method of manufacturing a thin film magnetic head, comprising:   Prior to the step (a),
  (A) forming a second metal layer in a height direction from a position away from the height side rear end surface of the lower shield layer by a predetermined distance in the height direction;
  (B) forming a second organic insulating layer made of a resist material in an interval spaced between the lower shield layer and the second metal layer;
  (C) Before or after forming the second organic insulating layer, Al is formed on the lower shield layer and the second metal layer. ₂ O ₃ Or SiO ₂ Forming a lower gap layer comprising:
  (D) forming the magnetoresistive element on the lower gap layer;
  (E) Al on the magnetoresistive element and the lower gap layer ₂ O ₃ Or SiO ₂ Forming an upper gap layer comprising:
  The method of manufacturing a thin film magnetic head according to claim 1. Wherein (a) when forming the first metal layer at a predetermined distance in the height direction from the upper shield layer in step, the interval drilled in the second metal layers and the lower shield layer, the upper the process according to claim 2 thin film magnetic head according to oppose the distance between the shield layer that is drilled in the first metal layers in a thickness direction.

Images