JP3831633B2 - Method for manufacturing light emitting device - Google Patents

Method for manufacturing light emitting device Download PDF

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Publication number
JP3831633B2
JP3831633B2 JP2001183712A JP2001183712A JP3831633B2 JP 3831633 B2 JP3831633 B2 JP 3831633B2 JP 2001183712 A JP2001183712 A JP 2001183712A JP 2001183712 A JP2001183712 A JP 2001183712A JP 3831633 B2 JP3831633 B2 JP 3831633B2
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electrode
frame
light emitting
emitting element
type layer
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JP2003008076A (en
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隆稔 薮内
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Sanyo Electric Co Ltd
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Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92147—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は発光装置の製造方法に関する。
【０００２】
【従来の技術】
従来、この種の装置に用いられる発光素子は例えば、特開平１１−１７７１３５号公報に示されている。この公報によると、絶縁性基板１０と、その上に積層された第１導電型層１１と、発光領域１２と、第２導電型層１３とが形成されている。
【０００３】
そして、第１導電型層１１は略凸状に形成され、第１電極１４は、この凸部の階段部分に形成されている。第２電極１５は、第２導電型層１３の表面に形成されている。そして、絶縁性基板１０は所定の基台に固定され、第１電極１４と第２電極１５との間に、所定の電圧が印加されている。
【０００４】
【発明が解決しようとする課題】
しかし、上記装置は発光効率が低い第１の欠点が有る。本発明者がその原因を究明したところ、この装置はジャンクションアップ型（基台から発光領域１２までが比較的遠い構造）であるためである事が分った。即ち、発光領域１２からの出射光は大部分が絶縁性基板１０に入射するが、この入射光は下向きであるので外側に向かう光（即ち、上向きの光）の量が少ないためである。
【０００５】
この欠点を解決するために、本発明者はジョンクションダウン型の構成を試みた。即ち、この発光素子を逆さにし、第１フレーム上に、第１サブマウントを介して第１電極１４を固定し、第２フレーム上に、第２サブマウントを介して第２電極１５を固定した。しかし、第１電極１４と第２電極１５の高さが異なるので高さが異なる第１サブマウントと第２サブマウントが必要となり、構成が複雑となり、組立しにくく、コストが高くなる第２の欠点が有る。そこで、本発明はこの様な従来の欠点を考慮して、発光効率が高く、サブマウントを必要としない発光装置を提供する。
【０００６】
【課題を解決するための手段】
上記課題を解決するために、請求項１の本発明では、一方の面の中央部に第１電極、その周囲を囲むように第２電極を有する発光素子と、板材で構成した第１のフレームと、前記第１の電極と対応する孔を有する板材で構成した第２のフレームと、それらを覆う透光性樹脂とを有した発光装置の製造方法であって、前記第２のフレームの孔の真上に前記発 光素子の第１の電極が位置するように位置合わせして前記第２のフレームに前記発光素子の第２の電極を固定する工程と、第２のフレームの孔を通して前記発光素子の第１の電極と前記第１のフレーム間に金属細線を配線する工程と、金属細線の配線後に前記第１、第２のフレームを折り曲げる工程と、フレーム折り曲げの後に前記発光素子と前記金属細線と前記第１、第２のフレームの一部を透光性樹脂で覆う工程とを有することを特徴とする。
【０００７】
請求項２の本発明では、発光素子は、透光性の絶縁性基板に積層された第１導電型層と発光領域と第２導電型層とを具備した構造であることを特徴とする。
【０００８】
【発明の実施の形態】
以下、図１ないし図５に従い、本発明の実施の形態に係る発光装置１の製造方法を示す。図１ないし図４は、各製造工程を示す図面である。
【０００９】
まず、製造者は発光素子２を製造する。図１に於て、絶縁性基板３は例えばサファイア基板であり、絶縁性を有する。
【００１０】
絶縁性基板３の表面上に、第１導電型層４と、発光領域５と、第２導電型層６が積層されている。第１導電型層４は例えば、ｎ型ＧａＮ層から成り、第２導電型層６は例えば、ｐ型ＧａＮ層から成る。発光領域５は、第１導電型層４と第２導電型層６との接合によって形成されたｐｎ接合である。
【００１１】
凹部７は、第２導電型層６の略中央に部分的に貫通し、かつ第１導電型層４を露出させる部分である。
【００１２】
この様に、絶縁性基板３の大きさは例えば５００μｍ角であり、厚さは３００μｍである。第１導電型層４の厚さは約３μｍであり、第２導電型層６の厚さは約１μｍである。この様に、絶縁性基板３上に、第１導電型層４と第２導電型層６がＭＯＶＰＥ法により成長される。
【００１３】
第２導電型層４の略中央に於て、フォトリソグラフィにより、第２導電型層６が除去され、凹部７が形成される。
【００１４】
第１電極８は例えば、金（Ａｕ）等から成り、例えば、直径が１００μｍの円柱状に形成されている。
【００１５】
第２電極９は例えば、金（Ａｕ）等から成り、例えば、外形が正方形であり、一辺が４５０μｍであり、略中央に直径が約１５０μｍの孔が形成されている。この様に、第２電極９は凹部７を囲む様に形成されている。以上の部品により、この発光素子２が構成されている。
【００１６】
次に、図２に示す様に、第２フレーム基台１０は例えば銅等の電気伝導率の高い材質から成り、平面から見れば、縦が約６００μｍであり、横が６００μｍよりも長い略長方形状のものである。第２フレーム基台１０の略中央部には、直径が１５０〜２００μｍの透孔１１が形成されている。
【００１７】
導電性接着材１２は例えば、ＡｕとＳｎから成る半田であり、蒸着法等により第２フレーム基台１０の表面上に形成されている。導電性接着材１２は平面から見れば、外形は一辺が約５５０μｍの正方形であり、略中央部には、が透孔１１の直径よりも少し大きい直径を持つ孔１３が形成されている。この様に、孔１３と透孔１１は同心円になる様に形成されている。
【００１８】
次に、図３に示す様に、製造者は、平坦な作業台（図示せず）上に、第２フレーム基台１０を載置する。そして、製造者は、図１に示した発光素子２を逆さにした状態で、第２フレーム基台１０の上方から下方へ移動させる。この時、製造者は、第２フレーム基台１０上に形成された導電性接着材１２上に、発光素子２に設けられた第２電極９を載置させる。必要に応じて、この作業は自動機械により行われても良い。
【００１９】
その後、第２フレーム基台１０の導電性接着材１２上に載置された発光素子２のセット品１４は、高温槽（図示せず）内に収納される。
【００２０】
この様にして、セット品１４は高温槽内で約４００℃の雰囲気中に所定時間だけ、静止される。その結果、第２フレーム基台１０は、導電性接着材１２を介して、第２電極９の略全面にわたって固着される。
【００２１】
その後、製造者は、第２フレーム基台１０に固着された発光素子２を逆さにする（図４参照）。この時、第２フレーム基台１０に形成された透孔１１は、発光素子２の第１電極８の略真上に位置している。また、導電性接着材１２に形成された孔１３も、第１電極８の略真上に位置している。
【００２２】
第１フレーム基台１５は、銅等の電気伝導率の高い材質から成り、板材により構成されている。第１フレーム基台１５は、第２フレーム基台１０と同一の高さになり、かつ第２フレーム基台１０と所定の距離だけ離れる様に、治具（図示せず）等により固定されている。
【００２３】
金属細線１６は、第１電極８と、第１フレーム基台１５との間に配線されている。これらの部品により、セット品１７が構成され、組立てられている。
【００２４】
次に、図５に示す様に、このセット品１７は逆さに配置される。そして、製造者は、第１曲げ治具（図示せず）にて、第１フレーム基台１５を折曲げ加工し、第１フレーム１５ａを製造する。同様にして、製造者は、第２曲げ治具（図示せず）にて、第２フレーム基台１０を折曲げ加工して、第２フレーム１０を製造する。
【００２５】
その後、製造者は、樹脂モールド法により、第１フレーム１５ａの下端およびその近傍と、第２フレーム１０ａの下端およびその近傍を除いて、発光素子２と導電性接着材１２と、金属細線１６と、第１フレーム１５ａの上部と、第２フレーム１０ａの上部等を覆う透光性樹脂１８を形成する。
【００２６】
この時、透光性樹脂１８に設けられたドーム形状１９は、絶縁性基板３の表面側に設けられる。これらの部品により、本発光装置１は完成される。
【００２７】
次に、主に図５に従い、発光装置１の構成の特徴を述べる。第１フレーム１５ａと第２フレーム１０ａは共に板材により構成され、ブロック状（比較的厚く、不均一な厚さを持つもの）のものではない。
【００２８】
図５に示した発光素子２は図１に示した発光素子２を逆さにした状態である。図５に示した発光素子２において、絶縁性基板３と、該基板３の裏面に積層された第１導電型層４と、発光領域（ｐｎ接合）と、第２導電型層６が設けられている。
【００２９】
第２導電型層６を部分的に貫通し、第１導電型層４を露出させた凹部７が形成されている。この凹部７の底面に第１電極８が形成されている。
【００３０】
第２導電型層６の裏面に、第２電極９が形成されている。第２フレーム１０ａは第２電極９に電気的接続され、第１フレーム１５ａは第１電極８に電気的接続されている。
【００３１】
更に、上記凹部７は、第２導電型層６の略中央に形成され、第２電極９は凹部７を囲む様に形成されている（図１（ａ）参照）。
【００３２】
また、第２フレーム１０ａは、第１電極８の略真下に位置する透孔１１が形成されている。第２フレーム１０ａは、第２電極９の略全面にわたって固着されている。第２フレーム１０ａに離れて位置する第１フレーム１５ａと、第１電極８との間には、凹部７内の孔１３と透孔１１を貫通して、配線（金属配線）１６が設けられている。
【００３３】
更に、第２フレーム１０ａは、導電性接着材１２を介して、第２電極９の略全面にわたって固着され、導電性接着材１２は、第１電極８の略真下に位置する孔１３が形成されている。
【００３４】
また、第１電極８の裏面の高さは、第２電極の裏面の高さよりも高くなる様に、構成されている。以上の部品により、本発光装置１は構成されている。
【００３５】
なお、上記説明と異なり、透光性樹脂１８を用いないで、発光装置１ａを構成しても良い。例えば、透光性樹脂１８を用いない発光装置１ａを１６×１６ドットの基盤ボードに取付けて、ドットマトリックス表示器等を製造しても良い。また、発光素子２を構成する発光領域５としてｐｎ接合を例示したが、本発明はこれに限定されず、発光領域５として活性層等を用いても良い。
【００３６】
上記の実施例に記載の発明では、絶縁性基板と、該基板の裏面に積層された第１導電型層と発光領域と第２導電型層と、前記第２導電型層を部分的に貫通し、前記第１導電型層を露出させた凹部の底面に形成された第１電極と、前記第２導電型層の裏面に形成された第２電極と、前記第２電極に電気的接続された第２フレームと前記第１電極に電気的接続された第１フレームとを具備した構成とする。この様に、第２導電型層の裏面に設けた第２電極と第２フレームを電気的接続し、凹部の底面に設けられた第１電極と第１フレームを電気的接続する。その結果、ジョンクションダウン型の構成となり、発光領域からの出射光は絶縁性基板を通り、上方に放出されるので、発光効率が高くなる。また、上記構成により、従来の様に、第１電極と第２電極に対し各サブマウントを設ける必要がないので、構成が簡素化し、組立し易くなる。
【００３７】
上記の実施例に記載の発明では、前記凹部は前記第２導電型層の略中央に形成され、前記第２電極は前記凹部を囲む様に形成された構成とする。上記構成により、第２電極の面積をより大きくとることができ、発光素子が第２フレーム上に、安定して載置され易くなる。また、第２導電型層の略中央に形成された凹部内に第１電極を設けるので、等方的な発光が可能となる。
【００３８】
上記の実施例に記載の発明では、前記第２フレームは、前記第１電極の略真下に位置する透孔が形成され、前記第２電極の略全面にわたって固着され、前記第２フレームに離れて位置する前記第１フレームと、前記第１電極との間に前記透孔を貫通して配線が設けられた構成とする。この様に、凹部内の第１電極と、第１フレームとの間に、透孔を貫通して配線を設けるので、第１電極の高さと第２電極の高さを同一にする必要がない。その結果、前記両電極の高さを同一するために、第１電極の厚さを、正確に制御する必要がなく、製造し易い。また、この様に配線構造する事により、第１電極と第２電極が短絡する事を防止できる。
【００３９】
上記の実施例に記載の発明では、前記第２フレームは、導電性接着材を介して、前記第２電極の略全面にわたって固着され、前記導電性接着材は、前記第１電極の略真下に位置する孔が形成された構成とする。この様に、第２フレームは導電性接着材を介して、第２電極の略全面にわたって固着されるので、発光素子は第２フレーム上に、安定して載置、固着できる。また、第１電極の略真下に位置する様に導電性接着材に孔が形成されているので、第１電極に配線する時に、導電性接着材が邪魔にならない。
【００４０】
上記の実施例に記載の発明では、前記第１フレームの下端およびその近傍と、前記第２フレームの下端およびその近傍を除いて、請求項４に記載した各部品を覆い、かつ、前記絶縁基板の表面側にドーム形状を有する透光性樹脂を具備した構成とする。この様に、絶縁基板の表面側にドーム形状が位置する様に、ジョンクションダウン型の発光素子を透光性樹脂にて覆うので、発光効率が更に高くなる。
【００４１】
上記の実施例に記載の発明では、前記第１電極の裏面の高さを、前記第２電極の裏面の高さよりも高くした構成とする。この様に構成する事により、凹部の深さにより第１電極の表面の高さは、第２電極の表面の高さよりも高いので、第１電極と第２電極の厚さを略同じに設定できる。その結果、第１電極の厚さを正確に制御する必要がないので、製造し易くなる。
【００４２】
上記の実施例に記載の発明では、前記第１フレームと前記第２フレームは板材により構成されるものとする。この様に、第１フレームと第２フレームは板材にて構成されているので、ブロック材（比較的厚く、不均一な厚さを持つもの）を用いる必要がなく、部品代が安く、かつ加工し易い。
【００４３】
【発明の効果】
以上のように本発明によれば、第１フレームと第２フレームは板材にて構成されているので、ブロック材（比較的厚く、不均一な厚さを持つもの）を用いる必要がなく、部品代が安く、かつ加工し易い。
【図面の簡単な説明】
【図１】 図１（ａ）は、本発明の実施の形態１に係る発光装置１に用いられる発光素子２の平面図であり、図１（ｂ）は発光素子２の断面図である。
【図２】 図２（ａ）は上記発光装置１に用いられる第２フレーム基台１０および導電性接着材１２の平面図であり、図２（ｂ）はそれらの断面図である。
【図３】 上記発光装置１に用いられるセット品１４の断面図である。
【図４】 上記発光装置１に用いられるセット品１７の断面図である。
【図５】 上記発光装置１の断面図である。
【符号の説明】
３ 絶縁性基板
４ 第１導電型層
５ 発光領域
６ 第２導電型層
７ 凹部
８ 第１電極
９ 第２電極
１０ａ 第２フレーム
１５ａ 第１フレーム[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a light emitting device.
[0002]
[Prior art]
Conventionally, a light emitting element used in this type of apparatus is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-177135. According to this publication, an insulating substrate 10, a first conductive type layer 11, a light emitting region 12, and a second conductive type layer 13 stacked thereon are formed.
[0003]
And the 1st conductivity type layer 11 is formed in the substantially convex shape, and the 1st electrode 14 is formed in the step part of this convex part. The second electrode 15 is formed on the surface of the second conductivity type layer 13. The insulating substrate 10 is fixed to a predetermined base, and a predetermined voltage is applied between the first electrode 14 and the second electrode 15.
[0004]
[Problems to be solved by the invention]
However, the above device has a first drawback that the luminous efficiency is low. As a result of investigation of the cause by the present inventor, it was found that this apparatus is a junction-up type (a structure in which the base to the light emitting region 12 is relatively far away). That is, most of the emitted light from the light emitting region 12 is incident on the insulating substrate 10, but since this incident light is downward, the amount of light directed outward (that is, upward light) is small.
[0005]
In order to solve this drawback, the present inventor tried a junction-down type configuration. That is, the light emitting element is turned upside down, the first electrode 14 is fixed on the first frame via the first submount, and the second electrode 15 is fixed on the second frame via the second submount. . However, since the heights of the first electrode 14 and the second electrode 15 are different from each other, the first submount and the second submount having different heights are necessary, the configuration is complicated, the assembly is difficult, and the cost is increased. There are drawbacks. Accordingly, the present invention provides a light-emitting device that has high luminous efficiency and does not require a submount in consideration of such conventional drawbacks.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, in the present invention of claim 1, a first frame comprising a light emitting element having a first electrode at the center of one surface and a second electrode surrounding the periphery of the first electrode, and a plate material. And a second frame constituted by a plate material having a hole corresponding to the first electrode, and a translucent resin covering the second frame, the method comprising: manufacturing a light emitting device having a hole in the second frame and fixing the second electrode of the light emitting elements aligned to the second frame such that the first electrode is positioned in the light - emitting element directly above the through hole of the second frame A step of wiring a thin metal wire between the first electrode of the light emitting element and the first frame; a step of bending the first and second frames after the wiring of the thin metal wire; and Metal thin wire and the first and second frames Characterized by a step of covering a translucent resin parts.
[0007]
According to a second aspect of the present invention, the light-emitting element has a structure including a first conductive type layer, a light emitting region, and a second conductive type layer stacked on a light-transmitting insulating substrate .
[0008]
DETAILED DESCRIPTION OF THE INVENTION
A method for manufacturing the light emitting device 1 according to the embodiment of the present invention will be described below with reference to FIGS. 1 to 4 are drawings showing each manufacturing process.
[0009]
First, the manufacturer manufactures the light emitting element 2. In FIG. 1, an insulating substrate 3 is a sapphire substrate, for example, and has an insulating property.
[0010]
On the surface of the insulating substrate 3, a first conductivity type layer 4, a light emitting region 5, and a second conductivity type layer 6 are laminated. The first conductivity type layer 4 is made of, for example, an n-type GaN layer, and the second conductivity type layer 6 is made of, for example, a p-type GaN layer. The light emitting region 5 is a pn junction formed by joining the first conductivity type layer 4 and the second conductivity type layer 6.
[0011]
The recess 7 is a portion that partially penetrates substantially the center of the second conductivity type layer 6 and exposes the first conductivity type layer 4.
[0012]
Thus, the size of the insulating substrate 3 is, for example, 500 μm square and the thickness is 300 μm. The thickness of the first conductivity type layer 4 is about 3 μm, and the thickness of the second conductivity type layer 6 is about 1 μm. Thus, the first conductive type layer 4 and the second conductive type layer 6 are grown on the insulating substrate 3 by the MOVPE method.
[0013]
At substantially the center of the second conductivity type layer 4, the second conductivity type layer 6 is removed by photolithography to form a recess 7.
[0014]
The first electrode 8 is made of, for example, gold (Au) or the like, and is formed in a cylindrical shape having a diameter of 100 μm, for example.
[0015]
The second electrode 9 is made of, for example, gold (Au) or the like. For example, the outer shape is a square, one side is 450 μm, and a hole having a diameter of about 150 μm is formed in the approximate center. Thus, the second electrode 9 is formed so as to surround the recess 7. The light emitting element 2 is constituted by the above components.
[0016]
Next, as shown in FIG. 2, the second frame base 10 is made of a material having high electrical conductivity such as copper, and when viewed from the plane, the length is about 600 μm and the width is a substantially rectangular shape longer than 600 μm. It is a shape. A through hole 11 having a diameter of 150 to 200 μm is formed in a substantially central portion of the second frame base 10.
[0017]
The conductive adhesive 12 is, for example, solder made of Au and Sn, and is formed on the surface of the second frame base 10 by vapor deposition or the like. When viewed from the top, the conductive adhesive 12 has a square shape with a side of about 550 μm, and a hole 13 having a diameter slightly larger than the diameter of the through hole 11 is formed in a substantially central portion. Thus, the hole 13 and the through hole 11 are formed to be concentric circles.
[0018]
Next, as shown in FIG. 3, the manufacturer places the second frame base 10 on a flat work table (not shown). Then, the manufacturer moves the light emitting element 2 shown in FIG. 1 from the upper side to the lower side of the second frame base 10 in an inverted state. At this time, the manufacturer places the second electrode 9 provided on the light emitting element 2 on the conductive adhesive 12 formed on the second frame base 10. If necessary, this operation may be performed by an automatic machine.
[0019]
Thereafter, the set product 14 of the light emitting element 2 placed on the conductive adhesive 12 of the second frame base 10 is accommodated in a high temperature bath (not shown).
[0020]
In this way, the set product 14 is kept stationary for a predetermined time in an atmosphere of about 400 ° C. in a high temperature bath. As a result, the second frame base 10 is fixed over substantially the entire surface of the second electrode 9 via the conductive adhesive 12.
[0021]
Thereafter, the manufacturer turns the light emitting element 2 fixed to the second frame base 10 upside down (see FIG. 4). At this time, the through hole 11 formed in the second frame base 10 is positioned substantially directly above the first electrode 8 of the light emitting element 2. Further, the hole 13 formed in the conductive adhesive material 12 is also located almost directly above the first electrode 8.
[0022]
The first frame base 15 is made of a material having high electrical conductivity such as copper and is made of a plate material. The first frame base 15 is fixed by a jig (not shown) or the like so as to have the same height as the second frame base 10 and to be separated from the second frame base 10 by a predetermined distance. Yes.
[0023]
The fine metal wire 16 is wired between the first electrode 8 and the first frame base 15. A set product 17 is constituted by these parts and assembled.
[0024]
Next, as shown in FIG. 5, the set product 17 is placed upside down. Then, the manufacturer bends the first frame base 15 with a first bending jig (not shown) to manufacture the first frame 15a. Similarly, the manufacturer bends the second frame base 10 with a second bending jig (not shown) to manufacture the second frame 10.
[0025]
Thereafter, the manufacturer uses a resin molding method to remove the light emitting element 2, the conductive adhesive 12, the metal thin wire 16, and the vicinity of the lower end of the first frame 15a and the vicinity thereof, and the lower end of the second frame 10a and the vicinity thereof. A translucent resin 18 is formed to cover the upper part of the first frame 15a, the upper part of the second frame 10a, and the like.
[0026]
At this time, the dome shape 19 provided in the translucent resin 18 is provided on the surface side of the insulating substrate 3. With these components, the light emitting device 1 is completed.
[0027]
Next, the characteristics of the structure of the light emitting device 1 will be described mainly according to FIG. The first frame 15a and the second frame 10a are both made of a plate material and are not in a block shape (thickness having a relatively thick and non-uniform thickness).
[0028]
The light-emitting element 2 illustrated in FIG. 5 is in a state where the light-emitting element 2 illustrated in FIG. 1 is inverted. In the light emitting element 2 shown in FIG. 5, an insulating substrate 3, a first conductivity type layer 4 laminated on the back surface of the substrate 3, a light emitting region (pn junction), and a second conductivity type layer 6 are provided. ing.
[0029]
A recess 7 that partially penetrates the second conductivity type layer 6 and exposes the first conductivity type layer 4 is formed. A first electrode 8 is formed on the bottom surface of the recess 7.
[0030]
A second electrode 9 is formed on the back surface of the second conductivity type layer 6. The second frame 10 a is electrically connected to the second electrode 9, and the first frame 15 a is electrically connected to the first electrode 8.
[0031]
Further, the concave portion 7 is formed at substantially the center of the second conductivity type layer 6, and the second electrode 9 is formed so as to surround the concave portion 7 (see FIG. 1A).
[0032]
In addition, the second frame 10 a is formed with a through hole 11 positioned substantially directly below the first electrode 8. The second frame 10 a is fixed over substantially the entire surface of the second electrode 9. Between the first frame 15a located away from the second frame 10a and the first electrode 8, a wiring (metal wiring) 16 is provided through the hole 13 and the through hole 11 in the recess 7. Yes.
[0033]
Furthermore, the second frame 10 a is fixed over substantially the entire surface of the second electrode 9 via the conductive adhesive 12, and the conductive adhesive 12 is formed with a hole 13 positioned almost directly below the first electrode 8. ing.
[0034]
Further, the height of the back surface of the first electrode 8 is configured to be higher than the height of the back surface of the second electrode. The light emitting device 1 is configured by the above components.
[0035]
Unlike the above description, the light emitting device 1a may be configured without using the translucent resin 18. For example, a dot matrix display or the like may be manufactured by attaching the light emitting device 1a not using the translucent resin 18 to a 16 × 16 dot base board. Further, although the pn junction is exemplified as the light emitting region 5 constituting the light emitting element 2, the present invention is not limited thereto, and an active layer or the like may be used as the light emitting region 5.
[0036]
In the invention described in the above embodiments , the insulating substrate, the first conductivity type layer, the light emitting region, the second conductivity type layer, and the second conductivity type layer laminated on the back surface of the substrate are partially penetrated. The first electrode formed on the bottom surface of the recess exposing the first conductivity type layer, the second electrode formed on the back surface of the second conductivity type layer, and the second electrode are electrically connected. A second frame and a first frame electrically connected to the first electrode. In this way, the second electrode provided on the back surface of the second conductivity type layer is electrically connected to the second frame, and the first electrode provided on the bottom surface of the recess is electrically connected to the first frame. As a result, the structure is a junction down type, and light emitted from the light emitting region passes through the insulating substrate and is emitted upward, so that the light emission efficiency is increased. Further, according to the above configuration, it is not necessary to provide each submount with respect to the first electrode and the second electrode as in the prior art, so that the configuration is simplified and the assembly is facilitated.
[0037]
In the invention described in the above-described embodiment, the recess is formed in the approximate center of the second conductivity type layer, and the second electrode is formed so as to surround the recess. With the above configuration, the area of the second electrode can be increased, and the light emitting element can be easily placed stably on the second frame. In addition, since the first electrode is provided in the recess formed substantially at the center of the second conductivity type layer, isotropic light emission is possible.
[0038]
In the invention described in the above embodiment , the second frame is formed with a through hole located almost directly below the first electrode, and is fixed over substantially the entire surface of the second electrode, and is separated from the second frame. It is set as the structure by which the said through-hole was penetrated between the said 1st flame | frame and the said 1st electrode located. As described above, since the wiring is provided through the through hole between the first electrode in the recess and the first frame, it is not necessary to make the height of the first electrode the same as the height of the second electrode. . As a result, since the heights of both the electrodes are the same, it is not necessary to accurately control the thickness of the first electrode, and it is easy to manufacture. In addition, such a wiring structure can prevent the first electrode and the second electrode from being short-circuited.
[0039]
In the invention described in the above embodiment , the second frame is fixed over substantially the entire surface of the second electrode via a conductive adhesive, and the conductive adhesive is directly below the first electrode. The hole is located. In this manner, the second frame is fixed over substantially the entire surface of the second electrode via the conductive adhesive, and thus the light emitting element can be stably placed and fixed on the second frame. In addition, since the hole is formed in the conductive adhesive so as to be positioned almost directly below the first electrode, the conductive adhesive does not get in the way when wiring to the first electrode.
[0040]
In the invention described in the above-described embodiment, except for the lower end of the first frame and the vicinity thereof, and the lower end of the second frame and the vicinity thereof, each component described in claim 4 is covered, and the insulating substrate It is set as the structure which comprised the translucent resin which has a dome shape on the surface side. Thus, since the junction down type light emitting element is covered with the translucent resin so that the dome shape is located on the surface side of the insulating substrate, the light emission efficiency is further increased.
[0041]
In the invention described in the above embodiment, the height of the back surface of the first electrode is set higher than the height of the back surface of the second electrode. By configuring in this way, the height of the surface of the first electrode is higher than the height of the surface of the second electrode due to the depth of the recess, so the thicknesses of the first electrode and the second electrode are set to be substantially the same. it can. As a result, it is not necessary to accurately control the thickness of the first electrode, which facilitates manufacture.
[0042]
In the invention described in the above embodiment , the first frame and the second frame are made of a plate material. In this way, since the first frame and the second frame are made of plate materials, it is not necessary to use block materials (thickness having a relatively thick and non-uniform thickness), the parts cost is low, and processing is performed. Easy to do.
[0043]
【The invention's effect】
As described above, according to the present invention, since the first frame and the second frame are made of plate materials, it is not necessary to use block materials (thicknesses that are relatively thick and non-uniform), and parts The cost is cheap and easy to process.
[Brief description of the drawings]
FIG. 1A is a plan view of a light-emitting element 2 used in the light-emitting device 1 according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view of the light-emitting element 2. FIG.
2A is a plan view of a second frame base 10 and a conductive adhesive material 12 used in the light emitting device 1, and FIG. 2B is a cross-sectional view thereof.
3 is a cross-sectional view of a set product 14 used in the light emitting device 1. FIG.
4 is a cross-sectional view of a set 17 used in the light emitting device 1. FIG.
5 is a cross-sectional view of the light emitting device 1. FIG.
[Explanation of symbols]
3 Insulating Substrate 4 First Conductive Type Layer 5 Light-Emitting Area 6 Second Conductive Type Layer 7 Recessed Part 8 First Electrode 9 Second Electrode 10a Second Frame 15a First Frame

Claims (2)

一方の面の中央部に第１電極、その周囲を囲むように第２電極を有する発光素子と、板材で構成した第１のフレームと、前記第１の電極と対応する孔を有する板材で構成した第２のフレームと、それらを覆う透光性樹脂とを有した発光装置の製造方法であって、前記第２のフレームの孔の真上に前記発光素子の第１の電極が位置するように位置合わせして前記第２のフレームに前記発光素子の第２の電極を固定する工程と、第２のフレームの孔を通して前記発光素子の第１の電極と前記第１のフレーム間に金属細線を配線する工程と、金属細線の配線後に前記第１、第２のフレームを折り曲げる工程と、フレーム折り曲げの後に前記発光素子と前記金属細線と前記第１、第２のフレームの一部を透光性樹脂で覆う工程とを有することを特徴とする発光装置の製造方法。 A light emitting element having a first electrode at the center of one surface and a second electrode surrounding the periphery of the first electrode, a first frame made of a plate material, and a plate material having a hole corresponding to the first electrode A method of manufacturing a light emitting device having a second frame and a translucent resin covering the second frame, wherein the first electrode of the light emitting element is positioned directly above the hole of the second frame. And fixing the second electrode of the light emitting element to the second frame by aligning with the first frame, and a thin metal wire between the first electrode of the light emitting element and the first frame through the hole of the second frame , A step of bending the first and second frames after wiring of the metal thin wire, and a light transmission of the light emitting element, the metal thin wire, and part of the first and second frames after the frame is bent. And a step of covering with a functional resin Method of manufacturing that the light emitting device. 発光素子は、透光性の絶縁性基板に積層された第１導電型層と発光領域と第２導電型層とを具備した構造であることを特徴とする請求項１に記載の発光装置の製造方法。 2. The light emitting device according to claim 1, wherein the light emitting element has a structure including a first conductive type layer, a light emitting region, and a second conductive type layer laminated on a light transmitting insulating substrate. Manufacturing method .
JP2001183712A 2001-06-18 2001-06-18 Method for manufacturing light emitting device Expired - Fee Related JP3831633B2 (en)

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