JP3830485B2 - Wire loop shape, semiconductor device having the wire loop shape, and wire bonding method - Google Patents
Wire loop shape, semiconductor device having the wire loop shape, and wire bonding method Download PDFInfo
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Description
本発明は、第1ボンディング点と第2ボンディング点との間をワイヤで接合するワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法に関するものである。 The present invention relates to a wire loop shape in which a wire is bonded between a first bonding point and a second bonding point, a semiconductor device having the wire loop shape, and a wire bonding method.
従来から行われていたワイヤボンディング方法として、図4に示すように、リードフレーム1にマウントされた半導体チップ2のパッド2a(第1ボンディング点A)とリードフレーム1のリード1a(第2ボンディング点Z)とをワイヤ3により接続する方法がある。この場合におけるワイヤ3のループ形状として、図4(a)に示す台形形状と図4(b)に示す三角形状とがある(例えば、特許文献1又は特許文献2参照)。
As a conventional wire bonding method, as shown in FIG. 4 , the
図4(a)に示す台形形状は、図5に示す工程により形成される。図5(a)に示すように、キャピラリ4が下降して第1ボンディング点Aに対しワイヤ先端に形成されたボール30をボンディングする。
次に図5(b)に示すように、キャピラリ4はB点まで上昇してワイヤ3を繰
り出す。次に図5(c)に示すように、キャピラリ4を第2ボンディング点Zと
反対方向にC点まで水平移動させる。
The trapezoidal shape shown in FIG. 4A is formed by the process shown in FIG. As shown in FIG. 5A , the
Next, as shown in FIG. 5B, the
一般に、キャピラリ4を第2ボンディング点Zと反対方向に移動させることをリバース動作という。これにより、ワイヤ3は、A点からC点まで傾斜した形状となり、ワイヤ3の部分に癖3aが付く。このA点からC点までの工程で繰り出されたワイヤ3は、図4(a)に示すネック高さ部H(2a〜3a間)となる。 続いて、図5(d)に示すように、キャピラリ4はD点まで上昇してワイヤ3を繰り出す。その後、図5(e)に示すように、キャピラリ4は再び第2ボンディング点Zと反対方向にE点まで水平移動、即ちリバース動作を行う。これにより、ワイヤ3は、C点からE点まで傾斜した形状となり、ワイヤ3の部分に癖3bが付く。
Generally, moving the
このC点からE点まで繰り出されたワイヤ3は、図4(a)に示す台形部長さ部分L(3a−3b間)となる。次に、図5(f)に示すように、キャピラリ4はF点まで上昇して図4(a)に示す傾斜部S(3b−1a)分だけワイヤ3を繰り出す。そして、図5(f)のf′、f″に示すように、キャピラリ4は下降して第2ボンディング点Zに位置し、第2ボンディング点Zにワイヤ3をボンディングする。
The
また、図4(b)に示す三角ループは、図6に示す工程により形成される。三角ループは、台形ループの台形部長さ部分L(3a−3b)を形成しないものであるので、図5(d)(e)に示す第2回目のリバース動作を行っていない。従って、図5(d)(e)(f(f′、f″を除く))の工程は、図6(d)の工程のみとなる。即ち、図5(b)(c)は図6(b)(c)と同じ工程であり、図6(c)に示す第1回目のリバース動作後、図6(d)に示すように、キャピラリ4はF点まで上昇してワイヤ3を繰り出す。その後、キャピラリ4は図5(f)のf′、f″と同様の図6(e(e′を含む))の動作を行って第2ボンディング点Zにワイヤ3をボンディングする。
Further, the triangular loop shown in FIG. 4 (b), is formed by the process shown in FIG. Since the triangular loop does not form the trapezoidal portion length portion L (3a-3b) of the trapezoidal loop, the second reverse operation shown in FIGS. 5D and 5E is not performed. Thus, the process of FIG. 5 (d) (e) ( f (f ', except f ")) is only the steps of FIG. 6 (d). That is, FIG. 5 (b) (c) Figure 6 (B) It is the same process as (c), and after the first reverse operation shown in FIG. 6 (c), the
このようなボンディング方法でワイヤループを形成した場合、第2ボンディング点1a(Z点)でのワイヤ接続形状は、キャピラリの端部で押しつぶされるため三日月状になるので、剥離(PULL)強度を適正に保つことができない恐れがある。
そこで、セキュリティボンディング方法が提案されている。この方法は、特許文献3に記載されているように、第2ボンディング点にワイヤをボンディングした後、一旦ワイヤを切断してワイヤの先端にボールを形成した後、再度第2ボンディング点に上からボールボンディングする方法である。ボールボンディングした後は、そのままワイヤを切断するか、あるいはさらにボールボンディングした位置に重ならない点にエンドボンディングするようにしている。
When a wire loop is formed by such a bonding method, the wire connection shape at the
Therefore, a security bonding method has been proposed. In this method, as described in
しかしながら、上記セキュリティボンディング方法では、一旦第2ボンディング点にワイヤボンディングした後ワイヤを切断し、新たにワイヤ先端にボールを形成して第2ボンディング点にボールボンディングをするために、時間が掛かるという問題がある。 However, in the above-described security bonding method, it takes a long time to perform wire bonding at the second bonding point after the wire bonding is performed once to the second bonding point, and then the ball is newly formed at the tip of the wire and then bonded to the second bonding point. There is.
本発明の課題は、第2ボンディング点でワイヤ接合強度を高め、かつワイヤリング時間が少なくて済む、ワイヤループ形状、その形状を備えた半導体装置及びワイヤボンディング方法の提供をすることにある。 An object of the present invention is to provide a wire loop shape, a semiconductor device having the shape, and a wire bonding method that increase the wire bonding strength at the second bonding point and reduce the wiring time.
上記課題を解決するために請求項1記載のワイヤループ形状は、第1ボンディング点と第2ボンディング点との間をワイヤで接続するワイヤループ形状において、第1ボンディング点にワイヤを接続する第1の工程と、次にキャピラリを設定されたn点(nは予めキャピラリの移動通過点として座標軸X,Y,Zに設定した点で、1,2,3・・・の何れかを示す。)を通過する上昇下降移動・水平移動によるループコントロールを行う第2の工程と、続いて第2ボンディング点へボンディングを行う第3の工程と、次にワイヤを繰り出しながらキャピラリを所定距離垂直に上昇させ、更に第1ボンディング点方向に所定距離水平移動し、続いて所定距離上昇、更に第2ボンディング点上方付近まで水平移動して第1ボンディング点方向にワイヤループを形成する第4の工程と、続いて第2ボンディング点付近でワイヤの一部を含めて潰した状態にボンディングする第5の工程とにより形成したことを特徴としている。
上記の工程において、設定されたn点、とは予めキャピラリの移動通過点として座標軸(X,Y,Z)に設定したn(nは1,2,3・・・の何れかを示す。)個の点をいう(以下、同じ)。
In order to solve the above problem, the wire loop shape according to
In the above process, the set n point is n previously set on the coordinate axis (X, Y, Z) as the moving passage point of the capillary (n indicates any one of 1, 2, 3,...). Points (hereinafter the same).
なお、上記工程中において、第4の工程と第5の工程をn回(nは1,2,3・・・)繰り返してワイヤループ形状を形成したことを特徴としている。 In the above process, the fourth process and the fifth process are repeated n times (n is 1, 2, 3,...) To form a wire loop shape.
また、上記課題を解決するために請求項3記載のワイヤボンディング方法は、第1ボンディング点と第2ボンディング点との間をワイヤボンディングする方法において、第1ボンディング点にワイヤを接続する第1の工程と、次にキャピラリを設定されたn点(nは予めキャピラリの移動通過点として座標軸X,Y,Zに設定した点で、1,2,3・・・の何れかを示す。)を通過する上昇下降移動・水平移動及びこれらを合成した移動等のループコントロールを行う第2の工程と、続いて第2ボンディング点にボンディングを行う第3の工程と、次にワイヤを繰り出しながらキャピラリを所定距離垂直に上昇させ、更に第1ボンディング点方向に所定距離水平移動し、続いて所定距離上昇、更に第2ボンディング点上方付近まで水平移動して第1ボンディング点方向にワイヤループを形成する第4の工程と、続いて第2ボンディング点付近でボンディングする第5の工程とを備えたことを特徴としている。 According to a third aspect of the present invention, there is provided a wire bonding method in which a wire is bonded to a first bonding point in the method of wire bonding between a first bonding point and a second bonding point. Step and n point where the capillary is set next (n is a point set in advance on the coordinate axes X, Y, Z as a moving passage point of the capillary and indicates any of 1, 2, 3...). The second step of performing loop control such as upward / downward movement / horizontal movement passing through and the movement combining these , followed by the third step of bonding to the second bonding point, and then moving the capillary while feeding the wire Move vertically by a predetermined distance, further move horizontally by a predetermined distance in the direction of the first bonding point, then move upward by a predetermined distance, and then move horizontally to the vicinity above the second bonding point. It is a fourth step of forming a first bonding point direction wire loop, followed by a fifth step of bonding the second near bonding points and comprising the.
上記方法の場合、第4の工程と第5の工程を交互にn回(nは1,2,3・・・)繰り返すことを特徴としている。 In the case of the above method, the fourth step and the fifth step are alternately repeated n times (n is 1, 2, 3,...).
また、請求項5記載の半導体装置は、第1ボンディング点と第2ボンディング点との間をワイヤで接続したワイヤループ形状を有する半導体装置において、前記ワイヤループ形状が、第1ボンディング点にワイヤを接続する第1の工程と、次にキャピラリを設定されたn点(nは予めキャピラリの移動通過点として座標軸X,Y,Zに設定した点で、1,2,3・・・の何れかを示す。)を通過する上昇下降移動・水平移動によるループコントロールを行う第2の工程と、続いて第2ボンディング点にボンディングを行う第3の工程と、次にワイヤを繰り出しながらキャピラリを所定距離垂直に上昇させ、更に第1ボンディング点方向に所定距離水平移動し、続いて所定距離上昇、更に第2ボンディング点上方付近まで水平移動して第1ボンディング点方向にワイヤループを形成する第4の工程と、続いて第2ボンディング点付近でワイヤの一部を含めて潰した状態にボンディングする第5の工程とにより形成されたことを特徴としている。 The semiconductor device according to claim 5 is a semiconductor device having a wire loop shape in which a wire is connected between a first bonding point and a second bonding point, and the wire loop shape has a wire at the first bonding point. The first step of connection and the n point where the capillary is set next (n is a point set in advance on the coordinate axes X, Y, Z as the moving passage point of the capillary, and is any one of 1, 2, 3... The second step of performing loop control by ascending / descending movement / horizontal movement passing through 3 ) , subsequently, the third step of bonding to the second bonding point, and then moving the capillary a predetermined distance while feeding the wire The first bonding point is moved up vertically, further moved horizontally by a predetermined distance in the direction of the first bonding point, then moved upward by a predetermined distance, and further moved horizontally to the vicinity of the second bonding point. A fourth step of forming a Ingu point direction to the wire loop, and the subsequently fifth feature that it is formed by the steps of bonding in a state of collapsed, including a portion of the wire at a second vicinity of bonding points .
なお、前記半導体装置におけるワイヤループの形状は、前記第4の工程と第5の工程を交互にn回(nは1,2,3・・・)繰り返して形成したことを特徴としている。 The shape of the wire loop in the semiconductor device is characterized in that the fourth step and the fifth step are alternately formed n times (n is 1, 2, 3,...).
本発明によれば、第2ボンディング点でワイヤ接合強度を高め、かつワイヤリング時間が少なくて済む、ワイヤループ形状、その形状を備えた半導体装置及びワイヤボンディング方法の提供ができる。 According to the present invention, it is possible to provide a wire loop shape, a semiconductor device having the shape, and a wire bonding method that increase the wire bonding strength at the second bonding point and reduce the wiring time.
以下、本発明の半導体装置10の一実施形態を図1に基づき説明する。なお、図4(a)と同じ又は相当部材若しくは相当部分には同一符号を付して説明する。
第1ボンディング点Aと第2ボンディング点Zとに接続したワイヤループ形状は、ネック高さ部H(2a−3a)、台形部長さ部分L(3a−3b)及び傾斜部S(3b−1a)とからなっており、台形部長さ部分Lの両端には癖3a、3bが付けられている。
Hereinafter, an embodiment of a
The wire loop shape connected to the first bonding point A and the second bonding point Z includes a neck height H (2a-3a), a trapezoidal length L (3a-3b), and an inclined part S (3b-1a). Both ends of the trapezoidal length portion L are provided with
以上は従来の半導体装置と同じである。本実施の形態ににおいては、第2ボンディング点付近に特徴がある。
すなわち、第2ボンディング点において、ワイヤボンディングが行われた後、ワイヤを切断することなく再度ワイヤループを形成してその位置にワイヤの一部を含めて潰した状態のボンディングが行われる。これにより、半導体装置10は、第2ボンディング点での接合面積が拡大されたワイヤループ形状を備えるものとなる。
The above is the same as the conventional semiconductor device. This embodiment is characterized in the vicinity of the second bonding point.
That is, after wire bonding is performed at the second bonding point, bonding is performed in a state in which a wire loop is formed again without cutting the wire and a part of the wire is crushed at that position. Thereby, the
次に、図1に示すような半導体装置10を得るための本発明によるワイヤボンディング方法及びこの方法によって形成されたワイヤループ形状の実施の形態を図2により説明する。なお、図4(a)及び図5と同一又は相当する部材若しくは相当する部分には同一符号を付して説明する。
Next, an embodiment of a wire bonding method according to the present invention for obtaining a
図2(a)に示すように、キャピラリ4が下降して第1ボンディング点Aに対しワイヤ先端に形成されたボール30をボンディングする。
次に図2(b)に示すように、キャピラリ4はB点まで上昇してワイヤ3を繰り出す。次に図2(c)に示すように、キャピラリ4を第2ボンディング点Zと反対方向にC点まで水平移動させる。
As shown in FIG. 2A, the
Next, as shown in FIG. 2 (b), the
これにより、ワイヤ3は、A点からC点まで傾斜した形状となり、ワイヤ3の部分に癖3aが付く。このA点からC点までの工程で繰り出されたワイヤ3は、図1に示すネック高さ部H(2a〜3a間)となる。
続いて、図2(d)に示すように、キャピラリ4はD点まで上昇してワイヤ3を繰り出す。続いて、図2(e)に示すように、キャピラリ4は再び第2ボンディング点Zと反対方向にE点まで水平移動、即ちリバース動作を行う。これにより、ワイヤ3は、C点からE点まで傾斜した形状となり、ワイヤ3の部分に癖3bが付く。
Thereby, the
Subsequently, as shown in FIG. 2 (d), the
このC点からE点まで繰り出されたワイヤ3は、図1に示す台形部長さ部分L(3a−3b間)となる。次に、図2(f)に示すように、キャピラリ4はF点まで上昇して図1に示す傾斜部S(3b−1a)分だけワイヤ3を繰り出す。そして、図2(f)のf′、f″に示すように、キャピラリ4は下降して第2ボンディング点Zに位置し、第2ボンディング点Zにワイヤ3をボンディングする。
The
従来の台形ループのワイヤループ形状は、ここでワイヤ3を切断するのであるが、本発明の実施形態では、続いて、図2(g)に示すように、キャピラリ4を上昇させてワイヤ3を繰り出し、図2(h)に示すように、キャピラリ4を第2ボンディング点Zと反対方向(第1ボンディング点方向)に水平移動させる。これにより、ワイヤ3は傾斜した形状となる。続いて、図2(i)に示すように、キャピラリ4を上昇させワイヤ3を繰り出す。その後、図2(j)に示すように、キャピラリ4を第2ボンディング点Z方向に水平移動させる。次に、図2(k)に示すように、キャピラリ4を下降させて第2ボンディング点(付近を含む)にワイヤボンディングする。
The wire loop shape of the conventional trapezoidal loop is that the
なお、図2(g)〜(k)の工程が、本発明に示す第4の工程と第5の工程に該当する。この工程を行うことで、ワイヤ3が潰されて、第2ボンディング点の接合面積が広がり、第2ボンディング強度を向上させることになる。なお、この工程は複数回繰り返しても良い。
上記の各工程を行うに当たり、予めキャピラリ4の移動通過点を座標軸(X,Y,Z)上に複数個所(n点)設定しておいて行う。
2G to 2K correspond to the fourth and fifth steps shown in the present invention. By performing this step, the
In performing each of the above steps, a plurality of (n points) moving passage points of the
この方法によれば、従来提案されている、第2ボンディング点でワイヤボンディングした後に、一旦ワイヤを切断して、新たにワイヤ先端にボールを形成して第2ボンディング点に上からボールボンディングするセキュリティボンディングに比べ、同様な接合強度を持つが、ワイヤループ形状の形成時間は短縮する。 According to this method, after wire bonding at the second bonding point, which has been conventionally proposed, the wire is once cut, a ball is newly formed at the tip of the wire, and the ball bonding is performed from above on the second bonding point. Compared to bonding, it has similar bonding strength, but shortens the time for forming the wire loop shape.
これらの工程によって、ワイヤループ形状は、図3(a)に示すように、ワイヤの一部が第2ボンディング点に接触する滑走路ループ形状Gが得られ、接合強度が向上する。 By these steps, as shown in FIG. 3A , the wire loop shape is a runway loop shape G in which a part of the wire is in contact with the second bonding point, and the bonding strength is improved.
ワイヤループ形状が、図4(b)に示す三角形状の場合でも、同様に行えば図3(b)に示すような滑走路ループ形状Gが得られる。 Wire loop shape, even in the case of a triangular shape shown in FIG. 4 (b), be carried out in the same manner runway loop-shaped G as shown in FIG. 3 (b) is obtained.
なお、図2(g)〜(k)の工程は、キャピラリ4の動きが第2ボンディング点を基準として、第1ボンディング点方向に移動させたり、或いは反対方向に移動させたりしているが、360°の範囲で自在に方向を決めて行うことができ、潰されたワイヤの向きが異なる形状のものを得ることができる。そして、それで得られる接合強度も同様である。
2 (g) to 2 (k), the movement of the
半導体装置の製造において、ボンディング点に対するワイヤの接合強度が高く、かつワイヤリング時間が少なくて済む、ワイヤボンディング方法として利用可能である。 In the manufacture of semiconductor devices, the present invention can be used as a wire bonding method in which the bonding strength of a wire to a bonding point is high and the wiring time is short.
1 リードフレーム
1a リード
2 チップ
2a パッド
3 ワイヤ
4 キャピラリ
30 ボール
H(2a-3a) ネック高さ部
L(3a-3b) フラット部
S(3b-1a) 傾斜部
A 第1ボンディング点
Z 第2ボンディング点
G 滑走路ループ形状
1 Lead
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