JP3819446B2 - Ultra high purity gas / pure water supply system and process equipment - Google Patents
Ultra high purity gas / pure water supply system and process equipment Download PDFInfo
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Description
【０００１】
【産業上の利用分野】
本発明は、超高純度ガス・純水供給システム並びにプロセス装置に係わり、特に、溶接部近傍にＭｎの付着が無く、このガス・純水供給配管を通してガスあるいは純水が導入される高清浄半導体装置等をＭｎの腐食により発生する金属汚染等から防ぐことが可能な超高純度ガス・純水供給システム並びにプロセス装置に関する。
【０００２】
【関連する技術】
溶接部を有するガス供給系配管並びにガス部品の接合としてタングステン・イナートガス溶接、アークガス溶接、電子ビーム溶接等が広く用いられている。
これら溶接技術においては、従来、溶融部から発生するＭｎヒュームについて考慮が払われていなかったが、本発明者らは、ＬＳＩの超高集積化・高性能化を目的としたウルトラクリーンテクノロジーの開発を進める上で、このＭｎヒュームが半導体デバイスの特性、歩留まりに大きく影響することを発見した。即ち、溶接によって発生したＭｎヒュームは溶接部近傍に再付着し、この付着したＭｎは、水分を含有した腐食性ガス（例えば塩化水素ガス）を流すと腐食し、ガス雰囲気を汚染してしまうことが分かった。また、一般ガスに対しても、短期間では特に問題はないが、長期的にはガス雰囲気を汚染し、多分に問題があることが判明した。
【０００３】
そこで本発明者等は溶接時に発生・再付着するＭｎヒューム量を極力低減するために、入熱量を低減した高速一周溶接技術を確立した。
この方法は、溶接部への入熱量を６００ジュール／ｃｍ以下とする溶接方法である。この方法により、溶接後における溶接放しの被溶接体を、１５Ｌ／ｈｒの流量で６時間超純水で洗浄したときのＦｅ，Ｎｉ，Ｃｒ及びＭｎ溶出量の総和が溶接長さ１ｃｍあたり０．１μｇ以下の溶接ステンレス材を実現している。なお、この技術は別途平成４年特許出願３０３６８１号（平成４年１１月１３日出願）により出願されている。
【０００４】
しかし、この方法により、溶接時に発生するＭｎヒューム量を低減させることができたものの、完全にガス雰囲気の汚染を防止するには至っておらず、このような状況の中、現在、Ｍｎフリーでより高清浄な半導体製造装置などのプロセス装置、ガス供給配管及び超純水供給配管、ガス供給システム及び超純水供給システムが強く望まれる。
【０００５】
【発明が解決しようとする課題】
以上の点に鑑み、本発明は、溶接部表面近傍並びにガス供給系内部にＭｎの付着がいっさい無く、これらガス供給系を通してガスが導入される半導体装置等の汚染を未然に防ぐことが可能な超高純度ガス・純水供給配管及びシステム並びにプロセス装置を提供することを目的とする。
【０００６】
【課題を解決するための手段】
本発明の超高純度ガス・純水供給システムは、少なくとも溶接される部分が、マンガン濃度０．０３重量％以下のオーステナイト系ステンレス材を溶接して構成し、溶接放しの状態で溶接部近傍におけるＭｎ付着量は１．０ｘｌ０ l0 ａｔоｍｓ／ｃｍ 2 以下であることを特徴とする。
【０００７】
本発明の、超高純度ガスプロセス装置は、少なくとも溶接される部分が、マンガン濃度０．０３重量％以下のオーステナイト系ステンレス材を溶接して構成し、溶接放しの状態で溶接部近傍におけるＭｎ付着量は１．０ｘｌ０l0ａｔоｍｓ／ｃｍ2以下であることを特徴とする。
前記ステンレス材としては、オーステナイト系のステンレスを用いることができる。Ｃｒ濃度は１７．０〜１８．０重量％が好ましく、Ｎｉ濃度は１４．０〜１５．０重量％が好ましい。また、前記ステンレス材は内面に酸化クロム不動態処理を施したものが望ましい。
【０００８】
本発明のプロセス装置は、少なくとも一部に溶接部を有し、該溶接部近傍にＭｎの付着が一切無く、耐食性の高いプロセス装置であって、少なくとも前記溶接部をマンガン濃度０．０３％以下のオーステナイト系ステンレス材で構成したことを特徴とする。
【０００９】
【作用】
本発明者等は、溶接時に発生・再付着して、ガス、超純水等の汚染源となるＭｎヒュームの発生を防止する目的で、高速一周ナロービード溶接法を用い、種々のステンレス材について、Ｍｎ濃度とＭｎヒューム発生量の関係を調べた。
Ｍｎ含有量を従来の０．６５％から０．２３％に低減することによりＭｎヒューム発生量を低減することができ、溶接速度及び入熱量を調整して、溶接ビード幅を一層細くすることで、Ｍｎヒューム量が大幅に低減することが分かった。しかし、低Ｍｎ材（Ｍｎ０．２３％）を用い、高速ｌ周ナロービード溶接を施しても完全にＭｎヒュームを消失させることはできなかった。
【００１０】
そこで、更に、実験を進めて、ステンレスをオーステナイト系とし、Ｍｎ濃度０．０３％以下とすると、溶接によるＭｎの再付着を完全に防止することが可能となることを見いだした。
この結果、これまで水分を含有したハロゲン系ガスによりガス供給系を腐食、汚染したＭｎを一掃することが可能になり、ガスの純度を劣化させること無くプロセス装置まで安定かつ確実にガス供給することが可能となる。
【００１１】
また、Ｍｎ濃度０．０３％以下のステンレス材料を用いることにより、Ｍｎヒュームを低減するために確立し、前述した高速１周ナロービード溶接法に限らず、従来の低速２周溶接法においてもＭｎの付着を防止することができる。
さらに、Ｍｎ濃度を０．０３％以下とし，Ｎｉ濃度を増加させることにより、入熱量を低減することができると共に、Ｍｎ以外の他の金属の発生・再付着を抑制することが可能となる。例えば、従来のオーステナイト系ステンレス材（Ｍｎ０．６５％、Ｎｉ１２．０〜１６．０％）に対し、Ｍｎ濃度を０．０３％以下、Ｎｉ濃度１４．０〜１５．０％とすることにより、例えば、溶接速度３０ｒｐｍ（１．０ｃｍ／ｓｅｃ）で一周行い、ビード幅を２ｍｍとする場合、Ｍｎ０．６５％材の入熱量が４５０Ｊ／ｃｍであるのに対し，０．０３Ｍｎ材では４２８〜４５０Ｊ／ｃｍとなる。
【００１２】
また、Ｃｒ濃度を１７．０〜１８．０％とすることにより、耐腐食性が一層向上する。また、脱ガス特性、耐食性のより一層の向上の観点から、ステンレス材の内面を酸化クロム不動態膜を形成するのが好ましい。
本発明の溶接手段としては、例えば放電、レーザーを用いたものが用いられる。放電を用いたものとして、例えばタングステンイナートガス溶接、アークガス溶接等が例示される。
【００１３】
溶接方法としては、溶接部への入熱量を６００ジュール／ｃｍ以下とする溶接方法が好ましい。溶接速度を２０ｃｍ／ｍｉｎ以上とすることが好ましく、また、溶接部の表面に対し垂直成分を有する磁場を印加しながら溶接することが好ましい。また、その磁場は５０ガウス以上とすることが好ましい。溶接ビード幅を１ｍｍ以下とすることが好ましい。また、前述した平成４年特許出願３０３６８１号（平成４年１１月１３日出願）に開示されている溶接方法を適宜本発明で適用できる。
【００１４】
本発明におけるプロセス装置とは、半導体製造装置、超電導薄膜製造装置、磁性薄膜製造装置、金属薄膜製造装置、誘電体薄膜製造装置等であり、例えばスパッタ、真空蒸着，ＣＶＤ、ＰＣＶＤ、ＭＯＣＶＤ、ＭＢＥ、ドライエッチング、イオン注入、拡散・酸化炉等の成膜装置及び処理装置、また、例えばオージェ電子分光、ＸＰＳ、ＳＩＭＳ、ＲＨＥＥＤ，ＴＲＸＲＦ等の評価装置である。また、超純水製造供給装置及びその供給配管系も本発明のプロセス装置に含まれる。
【００１５】
【実施例】
以下本発明実施例を挙げて詳細に説明する。
（実施例１）
電解研磨処理されたｌ／４インチ径のステンレス（Ｍｎ以外はＳＵＳ３１６Ｌを主要成分）配管を用いて、突き合わせ溶接を行った。溶接条件はバックシールドガスにＨ2とＡｒの混合ガスを用い、溶接速度７．５ｒｐｍ（０．２５ｃｍ／ｓｅｃ）で２周溶接を行いビード幅を２ｍｍに調整して行った。溶接後、溶接配管を長手方向に切断しＥＳＣＡを用いて内表面の金属組成を測定した。測定は、バックシールガスの流れに対して溶接ビード部を基準に上流側１０ｍｍから下流側３５ｍｍの範囲において、最表面のＭｎ組成率を調べた。その結果を図１に示す。
【００１６】
図１において、横軸は測定位置を、縦軸はＦｅ、Ｃｒ、Ｎｉ及びＭｎの全検出量に対するＭｎの検出量の比率を示す。ここで、○印は従来のＭｎ含有量０．６５％のステンレス材、●印はＭｎ含有量０．０３％のステンレス材である。
図１から明らかなように、０．０３％Ｍｎ材は溶接ビード部の上流側１０ｍｍから下流側３５ｍｍの全範囲においてＭｎはＥＳＣＡの検出限界以下であり付着はみられなかった。
【００１７】
次に、溶接速度を３０ｒｐｍ（１．０ｃｍ／ｓｅｃ）で、ビード幅を２ｍｍに調整して一周溶接を行った。ステンレス（ＳＵＳ３１６Ｌ）配管には、Ｍｎ濃度が１．７２％、０．６５％、０．２３％、０．０３％及び０．０１％のものを用いた。図１との場合と同様にして測定した結果を図２に示す。
図２が示すように、この溶接条件においても、０．０３％Ｍｎ材においては溶接部近傍においてＭｎ付着が見られなかった。なお、０．０１％Ｍｎ材は図には示さなかったが、Ｍｎ０．０３％材と同様、Ｍｎの付着は観測されず、Ｍｎ濃度０．０３％以下でＭｎ付着は起こらないことが分かった。
【００１８】
なお、Ｃｒ１７．０〜１８．０重量％、Ｎｉ１４．０〜１５．０重量％の範囲としたところ、優れた耐食性とともに、安定したオーステナイト相が得られた。
（実施例２）
電解研磨処理された１／４インチ径のステンレス（ＳＵＳ３１６Ｌ）配管を用いて、溶接時に発生する金属ヒュームの汚染をＴＲＸＲＦを用いて評価を行った。実験装置を図３に示す。実験方法は、図３に示すように、長さ１２０ｃｍのステンレス管をアーク溶接しながら、管末端に取り付けた５インチシリコンウエハ中央にバックシールドガスを吹き付けた。ウエハは予め希フッ酸＋過酸化水素水で自然酸化膜を除去したものを用いた。また、ウエハヘの外部からの汚染を防止するために実験装置はクリーンルーム内のファンフィルターユニット直下で行った。溶接ステンレス管にはＭｎ濃度０．６５％、０．２３％及び０．０３％の計３種類を用いた。溶接条件は３０ｒｐｍで１周、ビード幅を２ｍｍに調節し、またバックシールドガスはＨ2とＡｒの混合ガスを規定流量流して条件をすべて統一した。
【００１９】
ガスを一定時間吹き付けた各ウエハは、実験終了後すぐにＴＲＸＲＦで表面の不純物を測定した。その結果を図４にまとめた。
図４から明らかなように、０．０３％Ｍｎ材では、Ｍｎ付着量はＴＲＸＲＦの検出限界（１．０ｘｌ０l0ａｔоｍｓ／ｃｍ2）以下となり、検出されなかった。また、Ｍｎだけに限らず、他の金属等（Ｆｅ，Ｃｒ，Ｎｉ，Ｓ）の付着量も低いことが分かった。
【００２０】
【発明の効果】
以上述ベたように、本発明により、超高純度ガス供給配管系にＭｎ含有量のきわめて少ない材料を用いることで溶接部近傍にＭｎ付着の無いガス配管を供給することが可能となり、超高清浄なプロセス装置及び超高純度ガス供給配管系を提供することが可能となる。
【図面の簡単な説明】
【図１】溶接ビード近辺の最表面のＭｎ組成率を示すグラフである。
【図２】種々の配管材の溶接ビード近辺の最表面のＭｎ組成率を示すグラフである。
【図３】溶接時に発生する金属ヒュームの汚染をＴＲＸＲＦを用いて測定する実験装置を示す概念図である。
【図４】種々の配管材から発生する金属ヒューム量を示すグラフである。[0001]
[Industrial application fields]
The present invention relates to ultra-high purity gas Junmizukyo feeding system and process equipment, in particular, weld without deposition of Mn in the vicinity of the high gas or pure water is introduced through the gas-pure water supply pipe clean semiconductor device concerning corrosion by ultra high purity gas Junmizukyo feeding system and process equipment which can prevent metal contamination generated in the Mn.
[0002]
[Related technologies]
Tungsten inert gas welding, arc gas welding, electron beam welding, and the like are widely used for joining gas supply pipes having welds and gas components.
Conventionally, in these welding technologies, consideration has not been given to Mn fume generated from the melted part, but the present inventors have developed ultra-clean technology for the purpose of ultra-high integration and high performance of LSI. As a result, it was discovered that this Mn fume greatly affects the characteristics and yield of semiconductor devices. In other words, Mn fume generated by welding reattaches in the vicinity of the weld, and this adhering Mn corrodes when a corrosive gas containing moisture (for example, hydrogen chloride gas) is flowed to contaminate the gas atmosphere. I understood. In addition, although there is no particular problem with general gases in a short period, it has been found that the gas atmosphere is contaminated in the long term and there are many problems.
[0003]
Accordingly, the present inventors have established a high-speed round welding technique in which the amount of heat input is reduced in order to reduce as much as possible the amount of Mn fume generated and reattached during welding.
This method is a welding method in which the heat input to the weld is 600 joules / cm or less. By this method, the total amount of elution of Fe, Ni, Cr and Mn when the welded body to be welded after welding is washed with ultrapure water at a flow rate of 15 L / hr for 6 hours is 0. A welded stainless material of 1 μg or less is realized. This technology has been filed separately by 1992 patent application 303681 (filed on November 13, 1992).
[0004]
However, although this method has reduced the amount of Mn fume generated during welding, it has not yet completely prevented contamination of the gas atmosphere. Process devices such as highly clean semiconductor manufacturing equipment, gas supply pipes and ultrapure water supply pipes, gas supply systems and ultrapure water supply systems are strongly desired.
[0005]
[Problems to be solved by the invention]
In view of the above points, the present invention can prevent contamination of a semiconductor device or the like in which gas is introduced through these gas supply systems without any adhesion of Mn in the vicinity of the weld surface and inside the gas supply system. An object of the present invention is to provide an ultra-high purity gas / pure water supply pipe and system, and a process apparatus.
[0006]
[Means for Solving the Problems]
In the ultra high purity gas / pure water supply system of the present invention, at least a welded portion is formed by welding an austenitic stainless material having a manganese concentration of 0.03% by weight or less, and is in the vicinity of the welded portion in a state of being left unwelded. The amount of deposited Mn is 1.0 × 10 10 atoms / cm 2 or less .
[0007]
Of the present invention, ultra-high purity gas processing device, the portion being at least welded, constituted by welding a manganese concentration of 0.03 wt% or less of austenitic stainless steel, Mn of definitive near the weld state of the release welding The adhesion amount is 1.0 × 10 10 atoms / cm 2 or less.
As the stainless material, austenitic stainless steel can be used. The Cr concentration is preferably 17.0 to 18.0% by weight, and the Ni concentration is preferably 14.0 to 15.0% by weight. Further, the stainless steel preferably has a chromium oxide passivation treatment on the inner surface.
[0008]
The process apparatus of the present invention is a process apparatus having at least a weld part, no adhesion of Mn near the weld part, and high corrosion resistance, and at least the weld part has a manganese concentration of 0.03% or less. The austenitic stainless steel material is used.
[0009]
[Action]
In order to prevent the generation of Mn fumes that are generated and reattached during welding and become sources of contamination such as gas and ultrapure water, the present inventors have used a high-speed round narrow bead welding method, The relationship between the concentration and the amount of generated Mn fume was examined.
By reducing the Mn content from the conventional 0.65% to 0.23%, the amount of Mn fume generated can be reduced, and by adjusting the welding speed and heat input, the weld bead width is further reduced. It was found that the amount of Mn fume was greatly reduced. However, even if a low Mn material (Mn 0.23%) was used and high-speed l-round narrow bead welding was performed, Mn fume could not be completely eliminated.
[0010]
Therefore, further experiments were carried out, and it was found that if the stainless steel is made of austenite and the Mn concentration is 0.03% or less, the re-deposition of Mn by welding can be completely prevented.
As a result, it has become possible to wipe out Mn that has corroded and contaminated the gas supply system with a halogen-based gas containing moisture, and stably and reliably supplies gas to the process equipment without deteriorating the purity of the gas. Is possible.
[0011]
In addition, by using a stainless steel material having a Mn concentration of 0.03% or less, it has been established to reduce Mn fume, and is not limited to the high-speed one-round narrow bead welding method described above, but also in the conventional low-speed two-round welding method. Adhesion can be prevented.
Furthermore, by setting the Mn concentration to 0.03% or less and increasing the Ni concentration, it is possible to reduce the amount of heat input and to suppress generation / reattachment of metals other than Mn. For example, with respect to the conventional austenitic stainless steel material (Mn 0.65%, Ni 12.0 to 16.0%), the Mn concentration is 0.03% or less and the Ni concentration is 14.0 to 15.0%. For example, when the welding speed is 30 rpm (1.0 cm / sec) and the bead width is 2 mm, the heat input of the Mn 0.65% material is 450 J / cm, whereas the 0.03 Mn material is 428 to 450 J. / Cm.
[0012]
Moreover, by setting the Cr concentration to 17.0 to 18.0%, the corrosion resistance is further improved. Moreover, it is preferable to form a chromium oxide passivation film on the inner surface of the stainless steel from the viewpoint of further improving the degassing characteristics and corrosion resistance.
As the welding means of the present invention, for example, those using electric discharge or laser are used. Examples of using discharge include tungsten inert gas welding and arc gas welding.
[0013]
As the welding method, a welding method in which the heat input to the welded portion is 600 joules / cm or less is preferable. The welding speed is preferably 20 cm / min or more, and it is preferable to perform welding while applying a magnetic field having a vertical component to the surface of the weld. The magnetic field is preferably 50 gauss or more. The weld bead width is preferably 1 mm or less. Further, the welding method disclosed in the above-mentioned 1992 Patent Application 303681 (filed on November 13, 1992) can be appropriately applied in the present invention.
[0014]
The process apparatus in the present invention is a semiconductor manufacturing apparatus, a superconducting thin film manufacturing apparatus, a magnetic thin film manufacturing apparatus, a metal thin film manufacturing apparatus, a dielectric thin film manufacturing apparatus, etc., for example, sputtering, vacuum deposition, CVD, PCVD, MOCVD, MBE, It is a film forming apparatus and a processing apparatus such as dry etching, ion implantation, diffusion / oxidation furnace, and an evaluation apparatus such as Auger electron spectroscopy, XPS, SIMS, RHEED, TRXRF. Further, the ultrapure water production and supply apparatus and its supply piping system are also included in the process apparatus of the present invention.
[0015]
【Example】
Examples of the present invention will be described in detail below.
Example 1
Butt welding was performed using an electrolytically polished l / 4 inch diameter stainless steel pipe (SUS316L is the main component except for Mn). Welding conditions were performed by using a mixed gas of H 2 and Ar as the back shield gas, welding twice at a welding speed of 7.5 rpm (0.25 cm / sec), and adjusting the bead width to 2 mm. After welding, the welded pipe was cut in the longitudinal direction and the metal composition on the inner surface was measured using ESCA. In the measurement, the Mn composition ratio on the outermost surface was examined in the range of 10 mm upstream to 35 mm downstream with respect to the flow of the back seal gas with reference to the weld bead. The result is shown in FIG.
[0016]
In FIG. 1, the horizontal axis represents the measurement position, and the vertical axis represents the ratio of the detected amount of Mn to the total detected amounts of Fe, Cr, Ni, and Mn. Here, a circle indicates a conventional stainless steel material having a Mn content of 0.65%, and a mark ● indicates a stainless steel material having a Mn content of 0.03%.
As is clear from FIG. 1, in the 0.03% Mn material, Mn was below the detection limit of ESCA and no adhesion was observed in the entire range from 10 mm upstream to 35 mm downstream of the weld bead.
[0017]
Next, the welding speed was 30 rpm (1.0 cm / sec), the bead width was adjusted to 2 mm, and one-round welding was performed. Stainless steel (SUS316L) pipes having Mn concentrations of 1.72%, 0.65%, 0.23%, 0.03% and 0.01% were used. The results measured in the same manner as in FIG. 1 are shown in FIG.
As shown in FIG. 2, even under this welding condition, no adhesion of Mn was observed in the vicinity of the weld in the 0.03% Mn material. Although the 0.01% Mn material was not shown in the figure, as with the Mn 0.03% material, no Mn adhesion was observed, and it was found that no Mn adhesion occurred when the Mn concentration was 0.03% or less. .
[0018]
In addition, when it was set as the range of Cr17.0-18.0 weight% and Ni14.0-15.0 weight%, the stable austenite phase was obtained with the outstanding corrosion resistance.
(Example 2)
Using a 1/4 inch diameter stainless steel (SUS316L) pipe subjected to electrolytic polishing, the contamination of metal fume generated during welding was evaluated using TRXRF. The experimental apparatus is shown in FIG. In the experimental method, as shown in FIG. 3, a back shield gas was sprayed on the center of a 5-inch silicon wafer attached to the end of the tube while arc welding a stainless steel tube having a length of 120 cm. The wafer was obtained by removing the natural oxide film with dilute hydrofluoric acid + hydrogen peroxide solution in advance. Further, in order to prevent contamination from the outside of the wafer, the experimental apparatus was directly under the fan filter unit in the clean room. Three types of Mn concentrations of 0.65%, 0.23% and 0.03% were used for the welded stainless steel pipe. Welding conditions were adjusted to 1 round at 30 rpm, the bead width to 2 mm, and the back shield gas was a mixed flow of H 2 and Ar, and the conditions were all unified.
[0019]
Each wafer sprayed with gas for a certain period of time was measured for surface impurities by TRXRF immediately after the experiment was completed. The results are summarized in FIG.
As apparent from FIG. 4, in the 0.03% Mn material, the Mn adhesion amount was not detected because it was below the TRXRF detection limit (1.0 × 10 10 atoms / cm 2 ). Moreover, it turned out that the adhesion amount of not only Mn but other metals etc. (Fe, Cr, Ni, S) is also low.
[0020]
【The invention's effect】
As described above, according to the present invention, it is possible to supply a gas pipe without Mn adhesion in the vicinity of the welded portion by using a material having an extremely low Mn content in the ultra high purity gas supply pipe system. It becomes possible to provide a clean process device and an ultra-high purity gas supply piping system.
[Brief description of the drawings]
FIG. 1 is a graph showing the Mn composition ratio on the outermost surface in the vicinity of a weld bead.
FIG. 2 is a graph showing Mn composition ratios on the outermost surface in the vicinity of weld beads of various piping materials.
FIG. 3 is a conceptual diagram showing an experimental apparatus for measuring the contamination of metal fume generated during welding using TRXRF.
FIG. 4 is a graph showing the amount of metal fume generated from various piping materials.
Claims (6)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30066993A JP3819446B2 (en) | 1993-11-30 | 1993-11-30 | Ultra high purity gas / pure water supply system and process equipment |
| PCT/JP1994/002002 WO1995015406A1 (en) | 1993-11-30 | 1994-11-29 | Ultrapure gas and pure water feed duct, system and process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30066993A JP3819446B2 (en) | 1993-11-30 | 1993-11-30 | Ultra high purity gas / pure water supply system and process equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07151272A JPH07151272A (en) | 1995-06-13 |
| JP3819446B2 true JP3819446B2 (en) | 2006-09-06 |
Family
ID=17887650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30066993A Expired - Fee Related JP3819446B2 (en) | 1993-11-30 | 1993-11-30 | Ultra high purity gas / pure water supply system and process equipment |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3819446B2 (en) |
| WO (1) | WO1995015406A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6436353B1 (en) | 1997-06-13 | 2002-08-20 | Tadahiro Ohmi | Gas recovering apparatus |
| JP4125406B2 (en) | 1997-08-08 | 2008-07-30 | 忠弘 大見 | Welding method, refluorination passivation treatment method and welded part of welding member subjected to fluorination passivation treatment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826571B1 (en) * | 1968-12-28 | 1973-08-13 | ||
| JPS4855118A (en) * | 1971-11-15 | 1973-08-02 | ||
| JPS57140896A (en) * | 1981-02-21 | 1982-08-31 | Kobayashi Sachiko | Metallic material having chromium coated layer |
| JPS63161145A (en) * | 1986-12-25 | 1988-07-04 | Nkk Corp | Steel pipe for clean room |
| JPS63274741A (en) * | 1987-05-01 | 1988-11-11 | Kawasaki Steel Corp | Austenitic stainless steel for seamless steel tube |
-
1993
- 1993-11-30 JP JP30066993A patent/JP3819446B2/en not_active Expired - Fee Related
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1994
- 1994-11-29 WO PCT/JP1994/002002 patent/WO1995015406A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO1995015406A1 (en) | 1995-06-08 |
| JPH07151272A (en) | 1995-06-13 |
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