JP3752534B2 - Multi-component compound production equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The invention of this application relates to a multi-component compound production apparatus. More specifically, the invention of this application relates to an apparatus for preparing a multi-component compound capable of realizing high-speed material development and capable of continuously changing the composition ratio.
[0002]
[Prior art and its problems]
At present, electronic devices are composed of semiconductor materials, metals, and insulator materials. However, due to the recent improvement in integration, the physical limits of these materials are becoming apparent, and multi-element compounds are being used as materials for next-generation new devices. Has attracted attention.
[0003]
So far, multi-component compounds have been produced by various methods, but the conventional method is to produce a composition whose composition ratio is changed discontinuously little by little. For example, in the molecular beam epitaxy method, The composition of InGaAs is In0.1Ga0.9As, In0.2Ga0.8As, and In0.3Ga0.7As, and the composition ratio is discontinuously changed. Therefore, many composition ratios and synthesis conditions have to be changed, and there is a problem that it takes a long time to prepare a sample, and the material development has a huge time. The time taken for sample preparation is not only a problem that requires a lot of time, but for example, if it took 50 days to perform 100 experiments, the first and last synthesis There is also a problem that the atmosphere, temperature, and the like change, resulting in variations in data. Conventional methods other than the molecular beam epitaxy method have the same problems as the molecular beam epitaxy method.
[0004]
Under these circumstances, the inventors of the present application have been researching the synthesis of multi-component compounds using combinatorial techniques, and have developed a method for synthesizing ternary compounds using moving masks and fixed masks. However, even in the synthesis of ternary or more compounds using this moving mask and fixed mask, it can be formed only with a composition ratio changed discontinuously. There was a possibility that a function expressed in a delicate composition ratio could not be found in a multi-component compound.
[0005]
Therefore, the invention of this application has been made in view of the circumstances as described above, which solves the problems of the prior art, can realize high-speed material development, and can continuously change the composition ratio. An object of the present invention is to provide an apparatus for producing a multi-element compound.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the invention of this application is firstly a multi-component compound by vapor-phase film formation by continuously changing the composition ratio of each of three or more materials on a substrate. The material evaporation mechanism, the mask moving mechanism, and the substrate rotation mechanism provided with the substrate heating device are arranged in this order from the bottom, and the material evaporation mechanism is divided into a plurality of types of materials that rotate in the horizontal direction. On the other hand, it is a mechanism that irradiates each material with a laser to evaporate the material, and the mask moving mechanism is a flat plate arranged horizontally in the middle of the substrate rotating mechanism and the material evaporating mechanism. A moving mask having an opening formed in the substrate, and a mechanism for reciprocating the moving mask in a one-dimensional direction in the horizontal direction. The substrate rotating mechanism includes a substrate heating device, and has a disk-like shape arranged horizontally. Heating the substrate While providing a multiple compound manufacturing apparatus characterized in that it is a mechanism for rotating the horizontal direction.
[0007]
Second, the invention of this application provides a multi-component compound manufacturing apparatus characterized in that, in the first invention, the material evaporation mechanism, the mask moving mechanism, the substrate heating device, and the substrate rotating mechanism are automatically controlled. .
[0008]
Furthermore, thirdly, in the second invention, there is provided a multi-component compound production apparatus characterized in that automatic control is performed by a computer.
[0009]
According to a fourth aspect of the present invention, there is provided the multi-component compound manufacturing apparatus according to any one of the first to third aspects, wherein the substrate is heated uniformly or with a temperature gradient.
[0010]
Fifth, in any one of the first to fourth inventions, three or more multi-component composition regions, two-component composition regions, and regions in which the film thickness is continuously changed with one element are simultaneously formed on one sample. Also provided is a multi-component compound manufacturing apparatus characterized by forming.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The multi-component compound production apparatus of the invention of this application is a device for producing a multi-component compound by continuously changing the composition ratio of each of three or more materials on a substrate to form a multi-phase compound by vapor deposition. These are arranged in the order of a material evaporation mechanism, a mask moving mechanism, and a substrate rotating mechanism provided with a substrate heating device.
[0012]
Here, the material evaporation mechanism heats and evaporates a material such as an excimer laser for each type of material that rotates in the horizontal direction, and the mask movement mechanism rotates the substrate. It has a moving mask that is horizontally arranged in the middle part of the mechanism and the material evaporation mechanism and has an opening for passing the evaporated material in the middle part of the horizontal plane in the horizontal direction. It is intended to reciprocate in a one-dimensional direction. Further, the substrate rotation mechanism includes a substrate heating device, and rotates the disk-shaped substrate disposed horizontally while being heated.
[0013]
By using the multi-component compound production apparatus of the invention of this application, the multi-component compound can be produced in a state where the composition ratio is continuously changed at high speed. For example, when three kinds of materials are used, a ternary composition region, a binary composition region, and a region in which the film thickness, that is, the composition ratio is continuously changed by one element can be simultaneously formed on the substrate. Therefore, it is possible to automatically synthesize ternary compounds that have been prepared for each composition so far, and it is also possible to apply them to the creation of ternary phase diagrams and the like.
[0014]
In addition, the multi-component compound manufacturing apparatus of the invention of this application can be configured to automatically control the material evaporation mechanism, the mask moving mechanism, the substrate heating device, and the substrate rotating mechanism, and controls the film growth temperature, the sample angle by rotating the substrate, The mask moving mechanism can be automatically controlled. Further, these automatic controls can be performed by a computer.
[0015]
When four kinds of materials are used, a quaternary compound can be prepared by mixing another material with the ternary compound.
[0016]
For example, if the ternary compound is represented by A _x B _y C _z , the quaternary compound adds another material D to it, so that (A _x B _y C _z ) /D0.1, (A _x B _y C _z) /D0.2, a composition such _{··· (a x B y C z} ) /D0.9. Therefore, although it becomes a discontinuous composition ratio about D, it becomes a continuous composition about A, B, and C. Further, as a whole by comparing followed by _{(B x C y D z)} /A0.1, to produce things like _{··· (B x C y D z} ) /A0.9, with those prepared prior to A quaternary compound having a continuous composition can be produced.
[0017]
Also, when five or more kinds of materials are used, a multi-component compound having five or more ternary compounds can be prepared by the same method.
[0018]
Furthermore, the multi-element compound manufacturing apparatus of the invention of this application can be applied to automatic search for dielectric oxides for electronic devices.
[0019]
The multi-component compound producing apparatus of the invention of this application includes, for example, as shown in FIG. 1, a material evaporation mechanism (1), a mask moving mechanism (2), a substrate heating device (3), and a substrate rotating mechanism (4). , They can all be automatically controlled by the PC (5). Taking a ternary compound as an example of a method for producing a multi-element compound, first, in the material evaporation mechanism (1), one kind of material (6A) of the material (6) is evaporated by a KrF excimer laser (7). Then, the moving mask (9) of the mask moving mechanism (2) is caused to reciprocate, the evaporated material (6) is passed through the opening (10) provided in the moving mask (9), and the substrate heating device (3 ) To form a film on the silicon substrate (8) heated.
[0020]
FIG. 2 shows the procedure for forming the film. However, although two types of materials are shown in FIG. 2, this is because the side surface of the substrate is viewed from one direction, and in reality, film formation is performed using three types of materials. First, as shown in FIGS. 2A and 2B, a film of a material (6A) having a different thickness depending on the position is formed on the substrate (8). At this time, the maximum film thickness corresponds to one molecular layer. Next, the silicon substrate (8) is rotated 120 degrees by the substrate rotating mechanism (4) to evaporate another kind of material (6B), and the film is the maximum film as shown in FIGS. 2 (c) and (d). Grow to a thickness of one molecular layer. Next, the substrate rotation mechanism (4) rotates the silicon substrate (8) by 120 degrees to evaporate another type of material (6C), thereby forming ternary compounds having different compositions in one molecular layer. The By repeating this cycle an appropriate number of times, a thin film having a constant film thickness can be synthesized automatically.
[0021]
FIG. 3 is a conceptual diagram illustrating the formation region of a ternary compound, a binary compound, and a single element film having a continuous composition produced by the above method. In practice, a film as shown in FIG. 4 is formed. .
[0022]
In addition, about the heating of a board | substrate, a board | substrate heating apparatus can heat a board | substrate uniformly or with a temperature gradient. As a specific configuration of the substrate heating apparatus, for example, as shown in FIG. 5, when the substrate is heated uniformly, as shown in FIG. 6, when the substrate is heated with a temperature gradient, In the heater box (11), the opening (14) of the heat shielding plate (13) formed between the heater (12) and the substrate (8) and formed of Inconel or the like as a high-temperature heat-resistant material is expanded. It can be adjusted to heat the whole or part of the substrate (8) by narrowing. When a temperature gradient is applied by this substrate heating device (3), as shown in FIG. 7B, a temperature difference of 150 degrees or more can be provided depending on the position of a substrate having a diameter of about 3 cm. It is also possible to change the composition ratio by the inclination.
[0023]
By forming a thin film as described above, it can be expected to greatly speed up the search for materials and optimize growth conditions, dramatically increase the material development speed, and develop new device materials such as industry and economy. Can be expected to be effective.
[0024]
Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Of course, the present invention is not limited to the following examples, and it goes without saying that various aspects are possible in detail.
[0025]
【Example】
<Example 1>
There are a plurality of elements having a material evaporation mechanism (1), a mask moving mechanism (2), a substrate heating device (3), and a substrate rotating mechanism (4), all of which are automatically controlled by a PC as shown in FIG. A ternary compound was produced as an example of a multi-element compound using a compound production apparatus. In this example, the substrate was uniformly heated.
[0026]
In this example, HfO ₂ , Y ₂ O ₃ , and Al ₂ O ₃ were used as the three types of materials (6), and a ternary compound was prepared by mixing these materials in a continuous composition.
[0027]
Here, as shown in FIG. 1, an excimer laser (KrF laser) (7) having an output of 0.06 J and a wavelength of 248 nm is used as a laser to irradiate the materials (6) to evaporate them. As the moving mask (9) to be slid by the mask moving mechanism (2), a mask having a mask moving distance of 5.0 mm and a mask moving speed of 0.3 m / sec was used. As the substrate rotation mechanism (4), a substrate rotation mechanism having a rotation mechanism speed of 5 seconds required to rotate 120 degrees was used.
[0028]
Under the above conditions, one material (6A) of the three materials (6) of HfO ₂ , Y ₂ O ₃ , and Al ₂ O ₃ is evaporated by the excimer laser (7) and shown in FIG. In this way, by causing the moving mask (9) of the mask moving mechanism (2) to perform continuous reciprocating motion, films having different thicknesses are formed on the uniformly heated disc-shaped silicon substrate (8). Next, the silicon substrate (8) was rotated 120 degrees by the substrate rotation mechanism (4), another type of material (6B) was evaporated, and the film was grown to have a maximum thickness of one molecular layer. Next, the substrate rotation mechanism (4) rotates the silicon substrate (8) by 120 degrees to evaporate another kind of material (6C), and grows the film to a maximum thickness of one molecular layer. A ternary compound having continuously different compositions was formed in the molecular layer. By repeating this cycle, a ternary compound (15) as shown in FIG. 8 was synthesized on a silicon substrate (8).
[0029]
As a result of measuring the dielectric constant of the produced ternary compound (15) with a microwave microscope, it was found that there was a region having a high dielectric constant in the vicinity of HfO ₂ .
[0030]
【The invention's effect】
As described above in detail, the invention of this application provides a multi-component compound production apparatus capable of realizing high-speed material development and capable of continuously changing the composition ratio, and the multi-element compound production apparatus of the invention of this application. Can synthesize unknown multi-component compounds at a high speed, and thus compounds with unprecedented functions can be discovered. Furthermore, it has the possibility of producing new devices that make use of these characteristics, and a high economic effect can be expected.
[Brief description of the drawings]
BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a conceptual diagram illustrating a ternary compound production apparatus and production method using a material evaporation mechanism, a mask moving mechanism, a substrate heating device, and a substrate rotation mechanism according to the present invention.
FIG. 2 is a conceptual diagram illustrating a state in which a thin film of a ternary compound is formed on a substrate by a reciprocating motion of a moving mask of a mask moving mechanism.
FIG. 3 is a conceptual diagram illustrating the formation region of a ternary compound, a binary compound, and a single element film having a continuous composition formed by the method of FIG.
4 is an optical photograph illustrating a film of a ternary compound actually produced by the method of FIG.
FIG. 5 is a conceptual diagram showing how a substrate is uniformly heated by a substrate heating device.
FIG. 6 is a conceptual diagram showing a state in which a substrate is heated with a temperature gradient by a substrate heating device.
7 is a conceptual diagram and a graph showing a temperature difference depending on the position of a substrate heated by the method of FIG. 6;
FIG. 8 is an optical photograph of an actual sample manufactured by the method of FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Material evaporation mechanism 2 Mask moving mechanism 3 Substrate heating apparatus 4 Substrate rotation mechanism 5 PC
6 Material 7 Excimer laser (KrF laser)
8 Silicon substrate 9 Moving mask 10 Opening 11 Heater box 12 Heater 13 Heat shield 14 Opening 15 Ternary compound

Claims (5)

  An apparatus for producing a multi-component compound by continuously changing the composition ratio of each of three or more materials on a substrate to form a vapor phase film, comprising a material evaporation mechanism, a mask moving mechanism, and a substrate heating device from below These are arranged in the order of the substrate rotation mechanism provided with the material evaporation mechanism, which is a mechanism that irradiates each type of material with a laser and evaporates the material for a plurality of types of materials that rotate in the horizontal direction. The mask moving mechanism has a moving mask having a flat plate shape horizontally disposed in the middle part of the substrate rotating mechanism and the material evaporation mechanism, and having an opening formed in the middle part of the horizontal plane. A multi-component compound characterized in that it is a mechanism that reciprocates in the original direction, and the substrate rotation mechanism is a mechanism that is equipped with a substrate heating device and rotates in a horizontal direction while heating a horizontally disposed disk-shaped substrate Manufacturing equipment.   The multi-component compound manufacturing apparatus according to claim 1, wherein the material evaporation mechanism, the mask moving mechanism, the substrate heating device, and the substrate rotating mechanism are automatically controlled.   The multi-component compound production apparatus according to claim 2, wherein automatic control is performed by a computer.   4. The multi-component compound manufacturing apparatus according to claim 1, wherein the substrate is heated uniformly or with a temperature gradient.   5. The method according to claim 1, wherein three or more kinds of multi-component composition regions, two-component composition regions, and regions in which the film thickness is continuously changed by one element are simultaneously formed on one sample. Multi-component compound production equipment.

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