JP3734784B2

JP3734784B2 - Temperature detection device and power conversion device provided with temperature detection means

Info

Publication number: JP3734784B2
Application number: JP2002268792A
Authority: JP
Inventors: 伸行多田
Original assignee: Mitsubishi Electric Corp
Current assignee: Mitsubishi Electric Corp
Priority date: 2002-09-13
Filing date: 2002-09-13
Publication date: 2006-01-11
Anticipated expiration: 2022-09-13
Also published as: JP2004108825A

Description

【０００１】
【発明の属する技術分野】
この発明は、外来電磁波による計測誤差の補正機能を備えた温度検出装置、並びに、この温度検出装置を用いたインバータ、あるいは、コンバータなどの電力変換装置に関するものである。
【０００２】
【従来の技術】
温度により電圧−電流特性が変化するような半導体温度検出素子を用いた温度計測回路により温度を計測するとき、温度計測回路に電磁波が照射される雰囲気においては計測温度に誤差を生ずることがある。図１１ないし図１５は、このような温度検出機構を用いた車両用電力変換装置の構成を説明するもので、図１１は、車両用電力変換装置のシステム構成図、図１２は、電力変換装置の概略構成図、図１３は、図１２を部分的に拡大した構成説明図、図１４は、温度検出手段の構成を示すブロック回路図、図１５は、半導体温度検出素子の特性図を示したものである。
【０００３】
図１１において車両用電力変換装置のシステムは、インバータおよびコンバータなど、電力変換素子群２を含む電力変換器１と、この電力変換器１に制御信号を与えるコントローラ３と、電動機または発電機として機能する三相の回転電機４と、直流電源５とから構成され、電力変換器１内にはコントローラ３からの信号や各種センサ類の信号に応じて電力変換素子群２を制御する信号処理基板６が内蔵されている。電力変換素子群２は三相ブリッジに接続されたパワートランジスタなどの電力変換素子７ａないし７ｆと、この電力変換素子７ａないし７ｆとに逆並列に接続されたダイオード８ａないし８ｆとから構成され、直流電源５の電力を三相交流に変換して回転電機４を三相交流電動機として駆動し、また、三相交流発電機として機能する回転電機４の出力を直流に変換して直流電源５を充電する。
【０００４】
また、電力変換器１は図１２のように構成される。すなわち、電力変換素子群２は樹脂成形などにより形成されたケース９に収納され、信号処理基板６はこのケース９に取り付けられるが、電力変換素子群２と信号処理基板６とは、電力変換素子群２側に設けられた接続ピン１０と信号処理基板６側に設けられたスルーホール１１とにより電気的に接続され、ケース９には電力変換素子群２を直流電源５に接続する端子１２Ｐおよび１２Ｎと電力変換素子群２を回転電機４に接続する端子１３Ｕ、１３Ｖ、１３Ｗとが設けられ、信号処理基板６にはコントローラ３と接続するためのコネクタ１４が設けられている。
【０００５】
図１３は、図１２の要所を拡大して示したものである。ケース９内の電力変換素子群２を収納する部分には半導体基板上に温度により電圧−電流特性が変化する温度検出用ダイオード１５が設けられており、接続ピン１０とスルーホール１１とを介して信号処理基板６側に接続される。信号処理基板６側には図示しない定電圧電源から電圧Ｖｃｃの供給を受ける抵抗素子１６とＡ／Ｄ変換器１７とＣＰＵ１８とが設けられており、これらは図１４に示すように接続されていて温度検出装置を形成している。
【０００６】
定電圧電源から電圧Ｖｃｃが抵抗素子１６に加えられると、温度検出用ダイオード１５には電流Ｉｆが流れ、温度検出用ダイオード１５の両端には電圧Ｖｆが発生する。温度検出用ダイオード１５は温度により図１５に示すように特性が変化し、抵抗素子１６が温度に対して安定した抵抗値を持ち、その抵抗値がＲであるとすると、温度検出用ダイオード１５の両端電圧Ｖｆは
Ｖｆ＝Ｖｃｃ−（Ｒ×Ｉｆ）
となってこの電圧ＶｆがＡ／Ｄ変換器１７に与えられ、Ａ／Ｄ変換されてＣＰＵ１８に与えられる結果、ＣＰＵ１８は電力変換素子群２の温度を検出し、この温度に応じた制御信号を出力して例えばインバータとしての電力変換素子群２をＰＷＭ制御して温度破壊などから保護する。
【０００７】
【発明が解決しようとする課題】
このようにして温度に対する保護がなされるが、定電圧電源に電力を供給する電源とＧＮＤとの間にはコンデンサが設けられるのが一般的であり、比較的高周波の交流に対してはインピーダンスがゼロに近いものとなる。従って、図１４に示した温度検出用ダイオード１５と抵抗素子１６とは比較的高周波の交流に対してはループ回路を構成することになり、このループ回路は温度検出用ダイオード１５を有するために検波回路を形成することになる。そのために、このループ回路に外来電磁波が照射された場合には回路に電流が誘起され、検波されて直流分の電流となってＩｆに加算される。
【０００８】
すなわち、外来電磁波による電流は温度検出用ダイオード１５の順方向にのみ流れることになり、電流Ｉｆが増加する結果、温度検出用ダイオード１５の両端電圧Ｖｆも増加することになってＡ／Ｄ変換器１７とＣＰＵ１８とには実際の温度とは異なる電圧が与えられ、誤った制御が行われることになる。また、温度検出用ダイオード１５の逆方向には外来電磁波による電流は流れないので外来電磁波の周期に対応してＶｆが変動し、Ａ／Ｄ変換器１７の出力が変動を続け、安定しないという問題をも有するものであった。
【０００９】
この発明は、このような課題を解決するためになされたもので、外来電磁波が照射されても正確に温度計測ができ、また、外来電磁波を検出して温度検出値の正誤の判定や補正が可能な温度検出装置と、この温度検出手段を備えた電力変換装置を得ることを目的とするものである。
【００１０】
【課題を解決するための手段】
この発明に係わる温度検出装置は、温度に対応した電圧を出力する温度検出素子と、検波手段と電圧降下手段とを含み、外部からの電磁波照射があったとき、電磁波照射により発生する誘起電流が検波手段により検波され、電圧降下手段の電圧降下値として出力されることにより電磁波照射を検知する外来電磁波検出手段と、温度検出素子の出力と外来電磁波検出手段の出力とを入力し、外来電磁波検出手段の出力により、温度検出素子が計測する計測温度の正誤判定を行う温度計測手段とを備えたものである。
【００１１】
また、上記の検波手段が、ダイオードを用いた検波回路から構成されるようにしたものである。
さらに、検波手段が、外部からの電磁波照射を検知するアンテナを構成するようにしたものである。
【００１２】
さらにまた、外来電磁波検出手段が外部からの電磁波照射を検知したとき、温度計測手段が温度検出素子の出力を無効にするようにしたものである。
また、外来電磁波検出手段が外部からの電磁波照射を検知したとき、温度計測手段が外来電磁波検出手段の出力値に応じて温度検出素子からの入力値を補正するようにしたものである。
【００１３】
さらに、第一の定電圧電源から第一の固定抵抗を介して電流供給を受けると共に、第一の定電圧電源と第一の固定抵抗とを含む第一のループ回路を形成する第一の温度検出素子と、第一の温度検出素子とは近接して設けられ、第二の定電圧電源から第二の固定抵抗を介して電流供給を受けると共に、第二の定電圧電源と第二の固定抵抗とを含む第二のループ回路を形成する第二の温度検出素子と、第一の温度検出素子の出力と第二の温度検出素子の出力とを入力して温度計測を行う温度計測手段とを備え、第一のループ回路と第二のループ回路とに鎖交する外来電磁波の照射があったとき、第一の温度検出素子に流れる外来電磁波による誘起電流と第二の温度検出素子に流れる外来電磁波による誘起電流とが、それぞれ逆極性となって温度検出素子の出力に重畳されるようにしたものである。
【００１４】
さらにまた、上記の第一の温度検出素子と第二の温度検出素子とがダイオードから構成されるようにしたものである。
また、上記の第一の温度検出素子と第二の温度検出素子とがサーミスタから構成されるようにしたものである。
さらに、温度計測手段が第一の温度検出素子の出力と第二の温度検出素子の出力とを比較し、両出力の差から外来電磁波照射の有無を判定するようにしたものである。
【００１５】
さらにまた、温度計測手段が外来電磁波の照射を検知したとき、第一の温度検出素子の出力と第二の温度検出素子の出力との中間値を検出温度として計測するようにしたものである。
また、温度計測手段が外来電磁波の照射を検知したとき、第一の温度検出素子の出力と第二の温度検出素子の出力との内、変動の少ない側の出力を検出温度として計測するようにしたものである。
【００１８】
さらにまた、この発明に係わる温度検出手段を備えた電力変換装置は、直流電力または交流電力を入力して交流電力または直流電力に変換する電力変換用半導体素子と、半導体素子の近傍に配設された温度検出素子と、検波手段と電圧降下手段とを含み、外部からの電磁波照射があったとき、電磁波照射による誘起電流が検波手段により検波されて電圧降下手段の電圧降下値として出力されることにより外来電磁波を検知する外来電磁波検出手段と、温度検出素子の出力と外来電磁波検出手段の出力とを入力して半導体素子の温度計測を行う温度計測手段とを備え、外来電磁波検出手段が外部からの電磁波照射を検出し、その検出値が所定値以上であったとき、温度計測手段の温度検出値が誤りであると判定するようにしたものである。
【００１９】
また、直流電力または交流電力を入力して交流電力または直流電力に変換する電力変換用半導体素子と、この半導体素子の近傍に配設され、第一の定電圧電源から第一の固定抵抗を介して電流供給を受けると共に、第一の定電圧電源と第一の固定抵抗とを含む第一のループ回路を形成する第一の温度検出素子と、第一の温度検出素子と近接して設けられ、第二の定電圧電源から第二の固定抵抗を介して電流供給を受けると共に、第二の定電圧電源と第二の固定抵抗とを含む第二のループ回路を形成する第二の温度検出素子と、第一の温度検出素子の出力と第二の温度検出素子の出力とを入力して温度計測を行う温度計測手段とを備え、第一のループ回路と第二のループ回路とに鎖交する外来電磁波の照射があったとき、第一の温度検出素子に流れる外来電磁波による誘起電流と第二の温度検出素子に流れる外来電磁波による誘起電流とが、それぞれ逆極性となって温度検出素子の出力に重畳され、第一の温度検出素子と第二の温度検出素子との出力差により検出温度の正誤を判定するようにしたものである。
【００２１】
さらにまた、温度計測手段の検出値が誤りであると判定したとき、電力変換用半導体素子の動作を停止させるようにしたものである。
また、温度計測手段の検出値が誤りであると判定したとき、温度計測手段が外来電磁波検出手段の出力値に対応して温度検出素子の出力を補正するようにしたものである。
【００２２】
さらに、第一の温度検出素子と第二の温度検出素子とがサーミスタにより構成され、両者の出力差が所定値以上であったとき、第一の温度検出素子の出力と第二の温度検出素子の出力との中間値を検出温度とするようにしたものである。
さらにまた、第一の温度検出素子と第二の温度検出素子とがダイオードにより構成され、両者の出力差が所定値以上であったとき、第一の温度検出素子の出力と第二の温度検出素子の出力との内、変動の少ない側の出力を検出温度として計測するようにしたものである。
【００２３】
【発明の実施の形態】
実施の形態１．
図１および図２は、この発明の実施の形態１による温度検出装置を説明するもので、上記の従来例と同様、車両用電力変換装置に温度検出装置を用いた場合を示し、図１は、電力変換装置に内蔵する温度検出装置の概略構成図、図２は、温度検出装置の回路構成を示すブロック図である。なお、上記の従来例と同一機能部分には同一符号が付与されており、電力変換装置のシステム構成は従来例の図１１に示したものと同様である。
【００２４】
図１において、電力変換装置はインバータやコンバータなどの電力変換素子群を収納する樹脂製のケース９と、このケース９に取り付けられる信号処理基板６とから構成され、ケース９内には半導体基板上に設けられ、温度により電圧−電流特性が変化する温度検出用ダイオード１５が収納されており、温度検出用ダイオード１５は接続ピン１０とスルーホール１１とを介して信号処理基板６側に接続されるように構成されている。なお、ケース９に収納された図示しないインバータやコンバータなどの半導体素子の制御極も同様に、他の接続ピンとスルーホールとを介して信号処理基板６側に接続される。
【００２５】
信号処理基板６側には図示しない定電圧電源から電圧Ｖｃｃの供給を受ける抵抗値Ｒの抵抗素子１６と、温度検出用ダイオード１５の端子間電圧が入力されるＡ／Ｄ変換器１７と、Ａ／Ｄ変換器１７からのデジタル電圧値が入力されるＣＰＵ１８とが設けられており、また、ループ回路をなす抵抗値Ｒａの抵抗素子１９およびダイオード２０と、抵抗素子１９の両端子間に接続されたコンデンサ２１と、抵抗素子１９の両端子間電圧に対応した電圧を出力する差動増幅器２２と、この差動増幅器２２の出力をＡ／Ｄ変換してデジタル電圧値をＣＰＵ１８に与えるＡ／Ｄ変換器２３とが設けられている。そして、これらの接続を示したのが図２のブロック図である。
【００２６】
このように構成されたこの発明の実施の形態１による温度検出装置において、ループ回路をなす抵抗素子１９とダイオード２０とは外来電磁波検出手段としてループアンテナを形成している。外部から電力変換器に電磁波が照射されていない状態においてはループ回路、すなわち、抵抗素子１９には電流が流れず、従って差動増幅器２２に入力される電圧値Ｖａはゼロであり、この情報が差動増幅器２２から出力されてＡ／Ｄ変換器２３によりＡ／Ｄ変換され、温度計測手段としてのＣＰＵ１８に与えられる。
【００２７】
電力変換器に外来電磁波が照射されている状態においては、抵抗素子１９とダイオード２０とからなるループ回路に鎖交する外来電磁波によりループ回路には電流が誘起され、この誘起電流はダイオード２０の順方向にのみ流れ、逆方向の電流は阻止されるため、抵抗素子１９には外来電磁波の周期と同期した一定方向半波の脈動電圧が発生する。この電圧は抵抗素子１９に並列接続されたコンデンサ２１を充電し、抵抗素子１９とコンデンサ２１とからなる充放電回路の時定数が充分な値であり、外来電磁波の周波数と電界強度とが一定であればコンデンサ２１の端子電圧はほぼ一定値に充電されることになる。
【００２８】
この電圧は差動増幅器２２に与えられ、さらにＡ／Ｄ変換器２３によりデジタル変換されてＣＰＵ１８に与えられ、ＣＰＵ１８は入力された電圧値の有無と大きさとから外来電磁波の有無と電界強度とを検知する。一方、上記の従来例にて説明したように、温度検出素子としての温度検出用ダイオード１５と抵抗素子１６とからなるループ回路にも外来電磁波が照射され、このために検出温度に誤差を生ずるが、Ａ／Ｄ変換器２３からＣＰＵ１８に入力される電圧値によりＣＰＵ１８が検出温度に誤差があることを察知でき、Ａ／Ｄ変換器２３からの出力電圧が所定値を越えたときには温度検出値を無効にしたり、また、Ａ／Ｄ変換器２３からの出力電圧の値により検出温度の誤差を補正して正確な温度を検知したりすることができる。
【００２９】
上記したようにこの温度検出装置を車両用電力変換装置に用いた場合、この電力変換装置は電気自動車やハイブリッド車の直流電源からの電力を三相交流電力に変換して回転電機に与え、車両を駆動したり、回転電機の発電する三相交流電力を直流電力に変換して直流電源を充電したりするものであるが、電力変換装置に外来電磁波が照射される状態においても正確な温度を計測することができ、電力変換装置に用いられるスイッチング素子などの誤動作や破壊を未然に防止するよう制御することが可能になるものである。
【００３０】
実施の形態２．
図３ないし図６は、この発明の実施の形態２による温度検出装置を説明するもので、実施の形態１の場合と同様、車両用電力変換装置に温度検出装置を用いた場合を示し、図３は、電力変換装置に内蔵する温度検出装置の概略構成図、図４は、温度検出装置の回路構成を示すブロック図、図５は、外来電磁波が照射されない状態における温度検出素子の出力値を示す特性図、図６は、外来電磁波が照射された状態における温度検出素子の出力値を示す特性図である。なお、ここでも上記の従来例と同一機能部分には同一符号が付与されており、電力変換装置のシステム構成は従来例の図１１に示したものと同様である。
【００３１】
図３において、電力変換装置はインバータやコンバータなどの電力変換素子群を収納する樹脂製のケース９と、このケース９に取り付けられる信号処理基板６とから構成され、ケース９内には半導体基板上に温度検出素子としてサーミスタ２４ａと２４ｂとが近接して設けられ、サーミスタ２４ａと２４ｂとは近接して設けられた接続ピン１０ａおよび１０ｂとスルーホール１１ａおよび１１ｂとを介して信号処理基板６側に接続されるように構成されている。なお、ケース９に収納された図示しないインバータやコンバータなどの半導体素子の制御極も同様に、他の接続ピンとスルーホールとを介して信号処理基板６側に接続される。
【００３２】
信号処理基板６側には定電圧電源Ｖｃｃ１から電圧供給を受ける抵抗値Ｒの抵抗素子２５ａおよび定電圧電源Ｖｃｃ２から電圧供給を受ける抵抗値Ｒの抵抗素子２５ｂと、各サーミスタ２４ａおよび２４ｂの出力電圧が入力されるＡ／Ｄ変換器２６ａおよび２６ｂと、Ａ／Ｄ変換器２６ａおよび２６ｂからのデジタル電圧値が入力される温度計測手段としてのＣＰＵ１８とが設けられている。また、図３と図４とに示すように、サーミスタ２４ａと２４ｂとは、それぞれ一方の端子が抵抗素子２５ａまたは２５ｂとＡ／Ｄ変換器２６ａまたは２６ｂのアナログ入力端子に接続され、他方の端子は接地（ＧＮＤに接続）されている。
【００３３】
Ａ／Ｄ変換器２６ａおよび２６ｂのアナログ入力端子も近接して配設され、接続ピン１０ａと１０ｂ、スルーホール１１ａと１１ｂ、および、これらとサーミスタ２４ａ、２４ｂや、抵抗素子２５ａ、２５ｂなどを接続する配線パターンも近接して配設されるように構成されている。また、定電圧電源Ｖｃｃ１から抵抗素子２５ａとサーミスタ２４ａを経てＧＮＤに電流が流れ、サーミスタ２４ａの電圧値により温度検出を行う回路と、定電圧電源Ｖｃｃ２から抵抗素子２５ｂとサーミスタ２４ｂを経てＧＮＤに電流が流れ、サーミスタ２４ｂの電圧値により温度検出を行う回路とはそれぞれの回路自体と回路定数とは同様であるが、後述する外来電磁波による誘起電流Ｉｓは相互に逆方向になるようにループ回路が形成されている。
【００３４】
このように構成されたこの発明の実施の形態２による温度検出装置において、外部から電力変換装置に電磁波が照射されていない状態においてはサーミスタ２４ａとサーミスタ２４ｂとが近接して配設されているためほぼ同一温度になり、図５に示すようにＡ／Ｄ変換器２６ａとＡ／Ｄ変換器２６ｂとには、各サーミスタ２４ａと２４ｂの抵抗値をＲｓとすると、それぞれ、
Ｖａ＝Ｖｃｃ×Ｒｓ／（Ｒ＋Ｒｓ）
の電圧が入力され、ほぼ同一の温度データを検知することになる。
【００３５】
電力変換器に外来電磁波が照射されると、定電圧電源Ｖｃｃ１とＶｃｃ２とは対ＧＮＤ間に上記の従来例にて説明したように図示しないコンデンサが接続されているため、抵抗素子２５ａとサーミスタ２４ａ、抵抗素子２５ｂとサーミスタ２４ｂのそれぞれの回路は比較的高周波の交流に対してはループ回路を形成することになり、外来電磁波の誘導による誘起電流Ｉｓが発生する。そして各サーミスタ２４ａと２４ｂに流れる誘起電流は、各サーミスタ２４ａと２４ｂとが近接して配設されているため同一方向でほぼ同一値の電流となる。
【００３６】
すなわち、誘起電流が流れているときのある時点において、サーミスタ２４ａに定電圧電源Ｖｃｃ１から抵抗素子２５ａとサーミスタ２４ａとを介してＧＮＤの方向に誘起電流Ｉｓが流れるとすると、サーミスタ２４ｂにはＧＮＤからサーミスタ２４ｂと抵抗素子２５ bとを介して定電圧電源Ｖｃｃ２の方向に誘起電流Ｉｓが流れることになる。従って、Ａ／Ｄ変換器２６ａ側には電圧
Ｖａ１＝（Ｖｃｃ×Ｒｓ／（Ｒ＋Ｒｓ））＋（Ｒｓ×Ｉｓ）
が入力され、また、Ａ／Ｄ変換器２６ｂ側には電圧
Ｖａ２＝（Ｖｃｃ×Ｒｓ／（Ｒ＋Ｒｓ））−（Ｒｓ×Ｉｓ）
が入力されることになる。
【００３７】
この電圧Ｖａ１とＶａ２とを示したのが図６であり、各温度の検出値に対して交流の誘起電流Ｉｓによる電圧（Ｒｓ×Ｉｓ）分の位相が正反対になった電圧が重畳してＡ／Ｄ変換器２６ａとＡ／Ｄ変換器２６ｂとに入力されることになる。従って、Ａ／Ｄ変換器２６ａとＡ／Ｄ変換器２６ｂとの出力をＣＰＵ１８が入力し、両者を比較して差が所定値以下であれば外来電磁波の影響がないと判断し、所定値以上であれば外来電磁波の影響を受けていると判定することができる。
【００３８】
さらに、ＣＰＵ１８がＡ／Ｄ変換器２６ａとＡ／Ｄ変換器２６ｂとの出力を入力し、外来電磁波の影響を受けていると判定した場合にはＣＰＵ１８がＡ／Ｄ変換器２６ａの出力電圧とＡ／Ｄ変換器２６ｂの出力電圧との中間値を演算し、この演算値を温度に対応した電圧とすることにより、外来電磁波の影響を受けない温度検出が可能となり、電力変換装置に外来電磁波が照射される状態になっても正確な温度を計測することができ、電力変換装置に用いられるスイッチング素子などの誤動作や破壊を未然に防止することが可能となる。
【００３９】
実施の形態３．
図７ないし図９は、この発明の実施の形態３による温度検出装置を説明するもので、実施の形態１および２の場合と同様、車両用電力変換装置に温度検出装置を用いた場合を示し、図７は、温度検出装置の回路構成を示すブロック図、図８は、外来電磁波が照射されていない状態における温度検出素子の出力値を示す特性図、図９は、外来電磁波が照射された状態における温度検出素子の出力値を示す特性図であり、この実施の形態における温度検出装置は、実施の形態２による温度検出装置のサーミスタを温度検出用ダイオードに置き換えたものである。なお、ここでも上記の従来例と同一機能部分には同一符号が付与されており、電力変換装置のシステム構成は図１１に示したものと同様である。
【００４０】
図７において、実施の形態１にて説明した電力変換素子群を収納する樹脂製ケース９の半導体基板上には温度検出素子として温度検出用ダイオード２７ａと２７ｂとが設けられ、温度検出用ダイオード２７ａは抵抗素子２５ａを介して定電圧電源Ｖｃｃ１から電力供給を受け、温度検出用ダイオード２７ｂは抵抗素子２５ｂを介して定電圧電源Ｖｃｃ２から電力供給を受けると共に、それぞれの温度検出用ダイオード２７ａと２７ｂとのカソード側はＧＮＤに接続されている。そして、温度検出用ダイオード２７ａの電圧はＡ／Ｄ変換器２６ａを介して、温度検出用ダイオード２７ｂの電圧はＡ／Ｄ変換器２６ｂを介して温度計測手段としてのＣＰＵ１８に入力される。
【００４１】
温度検出用ダイオード２７ａと２７ｂとは実施の形態２におけるサーミスタ２５ａおよび２５ｂと同様に近接して設けられ、温度検出用ダイオード２７ａと２７ｂとからＡ／Ｄ変換器２６ａと２６ｂまでの配線も近接して設けられる。そのために、温度検出用ダイオード２７ａと２７ｂとにはほぼ同一の温度対応の電圧が発生し、温度検出用ダイオード２７ａと抵抗素子２５ａとからなるループ回路と、温度検出用ダイオード２７ｂと抵抗素子２５ｂとからなるループ回路とにはほぼ同一の外来電磁波による誘起電流が発生する。
【００４２】
このように構成されたこの発明の実施の形態３による温度検出装置において、外来電磁波のない状態においては温度検出用ダイオード２７ａと２７ｂとの電圧は図８に示すように各温度に対応したほぼ等しい値となってＡ／Ｄ変換器２６ａと２６ｂとに与えられ、ＣＰＵ１８はほぼ同一の温度データを検知する。
【００４３】
外来電磁波が印加された状態においては、誘起電流は温度検出用ダイオード２７ａまたは２７ｂの順方向にのみ流れるので、誘起電流によるリップル電圧は図９に示すように交互に発生することになり、リップル電圧の発生していない方の値が正確な温度を表示していることになる。従って、Ａ／Ｄ変換器２６ａと２６ｂとから電圧を入力するＣＰＵ１８は両者を比較し、両者の差が所定値以下であれば外来電磁波の影響がなく、所定値以上であれば外来電磁波の影響を受けていると判定して処理を行うことができ、また、リップル電圧の発生していない安定した方の値を正しい温度と判定することができる。
【００４４】
このようにして外来電磁波の有無を判定すると共に、正確な温度を検出することにより、電力変換装置に外来電磁波が照射される状態においても正確な温度を計測して、電力変換装置に用いられるスイッチング素子などの誤動作や破壊を未然に防止することが可能になるものである。
【００４５】
実施の形態４．
図１０は、この発明の実施の形態４による温度検出装置を電力変換装置に使用した状態の概略構成図である。図において、実施の形態１にて説明した電力変換素子群を収納する樹脂製ケース９の半導体基板上には実施の形態１と同様に温度検出用ダイオード１５が設けられており、温度検出用ダイオード１５は接続ピン１０とスルーホール１１とを介して信号処理基板６側に接続されるように構成され、信号処理基板６側には図示しない定電圧電源から電圧Ｖｃｃの供給を受ける抵抗値Ｒの抵抗素子１６と、温度検出用ダイオード１５の端子間電圧が入力されるＡ／Ｄ変換器１７と、Ａ／Ｄ変換器１７からのデジタル電圧値が入力される温度計測手段としてのＣＰＵ１８とが設けられている。
【００４６】
半導体基板上に形成された温度検出用ダイオード１５と接続ピン１０とは例えば半導体基板上に形成された配線パターン２８と２９とにより接続されるが、配線パターン２８と配線パターン２９とは互いに交差してツイストペア状に構成される。また、スルーホール１１とＡ／Ｄ変換器１７や抵抗素子１６および信号処理基板６上に設けられたアースパターンＧＮＤとの間も配線パターン３０と３１とにより接続されるが、配線パターン３０と配線パターン３１も同様に互いに交差してツイストペアを構成するように設けられる。
【００４７】
このように構成されたこの発明の実施の形態４による温度検出装置において、電力変換装置の図示しないスイッチング素子の近傍に設けられた温度検出用ダイオード１５は上記の実施の形態１や従来例にて述べたように電力変換素子群の温度を計測し、電力変換装置に外来電磁波が照射された場合には温度検出用ダイオード１５と抵抗素子１６とから形成されるループ回路に外来電磁波が鎖交して誘起電流が発生するが、温度検出用ダイオード１５と抵抗素子１６とからなる回路が配線パターン２８と配線パターン２９、および、配線パターン３０と配線パターン３１がツイストペアとして捩られた構成となっているため、誘起電流が相殺されてＡ／Ｄ変換器１７に与えられる誘起電流に起因する電圧は極めて小さなものになる。
【００４８】
このように、この発明の実施の形態４による温度検出装置の構成によれば外来電磁波による誘起電流が極めて小さなものになるので、正確な温度を検出することが可能になり、電力変換装置に外来電磁波が照射される状態においても正確な温度を計測して、電力変換装置に用いられるスイッチング素子などの誤動作や破壊を未然に防止することが可能になるものである。なお、この構成は温度検出素子が温度検出用ダイオードでなく、実施の形態２のようなサーミスタであっても同様の結果を得ることができるものである。
【００４９】
【発明の効果】
以上に説明したように、この発明による温度検出装置において、請求項１に記載の発明によれば、温度に対応した電圧を出力する温度検出素子と、検波手段と電圧降下手段とを含み、外部からの電波照射があったとき誘起電流が検波手段により検波されて電圧降下手段の両端子間に電圧降下値を発生させる外来電磁波検出手段と、温度検出素子と外来電磁波検出手段との出力を入力し、外来電磁波検出手段との出力により温度検出素子の計測する計測温度の正誤を判定する温度計測手段とを備えたので、従来の温度計測部の構成を変更することなく、外来電磁波検出手段としての検波手段と電圧降下手段とを付加するだけで外来電磁波照射の有無を検知することが可能になり、外来電磁波の照射強度を検知する機能を有した温度検出装置を得ることができるものである。
【００５０】
また、請求項２に記載の発明によれば、請求項１の発明において、検波手段が、ダイオードを用いた検波回路から構成されるようにしたので、さらに、請求項３に記載の発明によれば、請求項１と２の発明において、検波手段が、外部からの電磁波照射を検知するアンテナを構成するようにしたので、小型で安価であり、設置自由度の高い外来電磁波検出手段を得ることができるものである。
【００５１】
さらにまた、請求項４に記載の発明によれば、請求項１〜３の発明において、外来電磁波検出手段が外部からの電磁波照射を検出したとき、温度計測手段が温度検出素子の出力を無効にするようにしたので、電磁波の照射により温度検出に誤差が生じている場合、これを判定して誤認識によるトラブルを未然に防止することができるものである。
【００５２】
また、請求項５に記載の発明によれば、請求項１〜３の発明において、外来電磁波検出手段が外部からの電磁波照射を検出したとき、温度計測手段が外来電磁波検出手段の検出値に応じて温度検出素子の出力を補正するようにしたので、電磁波の照射があっても電界強度に応じた補正を行い、常に正確な温度情報を得ることができるものである。
【００５３】
さらに、請求項６に記載の発明によれば、温度検出素子が定電圧電源から固定抵抗を介して電流供給を受けると共に、この温度検出素子と定電圧電源と固定抵抗とで形成されるループ回路を近接して二組形成し、二組のそれぞれの温度検出素子の出力を入力して温度計測手段が温度計測を行うようにし、二組のループ回路に鎖交する外来電磁波の照射があったとき、第一の温度検出素子に流れる誘起電流と第二の温度検出素子に流れる誘起電流とが、それぞれ逆極性となって温度検出素子の出力に重畳されるようにしたので、二つの温度検出素子の出力差から外来電磁波照射の有無や電界強度を容易に検出することができるものである。
【００５４】
さらにまた、請求項７に記載の発明によれば、請求項６に記載の発明による二つの温度検出素子をダイオードで構成するようにしたので、また、請求項８に記載の発明によれば、請求項６に記載の発明による二つの温度検出素子をサーミスタで構成するようにしたので、小型で安価であり、設置自由度の高い外来電磁波検出手段を得ることができるものである。
【００５５】
さらに、請求項９に記載の発明によれば、請求項６〜８の発明において、温度計測手段が第一の温度検出素子の出力と第二の温度検出素子の出力とを比較して両出力の差から外来電磁波照射の有無を判定するように構成したので、二つの温度検出素子の出力差から容易に外来電磁波照射による検出温度誤差の有無が判定できるものである。
【００５６】
さらにまた、請求項１０に記載の発明によれば、請求項８の発明において、温度計測手段が外来電磁波の照射を検出したとき、第一の温度検出素子の出力と第二の温度検出素子の出力との中間値を検出温度として計測するようにしたので、外来電磁波照射による検出温度誤差を容易に補正することができ、外来電磁波の照射があっても正確な温度を計測することが可能になるものである。
【００５７】
また、請求項１１に記載の発明によれば、請求項７の発明において、温度計測手段が外来電磁波の照射を検出したとき、第一の温度検出素子の出力と第二の温度検出素子の出力との内、変動の少ない側の出力を検出温度として計測するようにしたので、外来電磁波の照射があっても正確な温度を計測することが可能になるものである。
【００６０】
さらにまた、この発明による温度検出手段を備えた電力変換装置において、請求項１２に記載の発明によれば、電力変換用半導体素子と、この半導体素子の近傍に配設された温度検出素子と、検波手段と電圧降下手段とを含む外来電磁波検出手段と、温度検出素子の出力と外来電磁波検出手段の出力とを入力して半導体素子の温度計測を行う温度計測手段とを備え、外来電磁波検出手段が外部からの電波照射を検出し、その検出値が所定値以上であったとき、温度計測手段の検出値が誤りであると判定するようにしたので、外来電磁波の照射に起因した温度の誤検出による電力変換用半導体素子などの破損を未然に防止することが可能な温度検出手段を備えた電力変換装置を得ることができるものである。
【００６１】
また、請求項１３に記載の発明によれば、電力変換用半導体素子と、この半導体素子の近傍に配設され、温度検出素子と定電圧電源と固定抵抗とから構成される二組の近接配置されたループ回路と、二組のそれぞれの温度検出素子の出力を入力して温度計測を行う温度計測手段とを備え、二組のループ回路に鎖交する外来電磁波が照射されたとき、第一の温度検出素子に流れる誘起電流と第二の温度検出素子に流れる誘起電流とが、それぞれ逆極性となって温度検出素子の出力に重畳され、第一の温度検出素子と第二の温度検出素子との出力差により検出温度の正誤を判定するようにしたので、外来電磁波の照射に起因した温度の誤検出による電力変換用半導体素子などの破損を未然に防止することが可能な温度検出手段を備えた電力変換装置を得ることができるものである。
【００６３】
さらにまた、請求項１４に記載の発明によれば、請求項１２と１３の発明において、温度計測手段の検出値が誤りであると判定したとき、電力変換用半導体素子の動作を停止させるように構成したので、温度の誤検出による誤動作や素子の破壊を未然に防止することが可能な温度検出手段を備えた電力変換装置を得ることができるものである。
【００６４】
また、請求項１６に記載の発明によれば、請求項１２の発明において、温度計測手段の検出値が誤りであると判定したとき、温度計測手段が外来電磁波検出手段の出力値に対応して温度検出素子の出力を補正するようにしたので、温度の誤検出による誤動作や素子の破壊を未然に防止することが可能な温度検出手段を備えた電力変換装置を得ることができるものである。
【００６５】
さらに、請求項１６に記載の発明によれば、請求項１３の発明において、第一の温度検出素子と第二の温度検出素子とがサーミスタにより構成され、両者の出力差が所定値以上であったとき、第一の温度検出素子の出力と第二の温度検出素子の出力との中間値を検出温度とするようにしたので、外来電磁波照射による検出温度誤差を容易に補正することができ、外来電磁波の照射があっても正確な温度を計測して電力変換用半導体素子を保護し、正常な動作を維持することが可能な温度検出手段を備えた電力変換装置を得ることができるものである。
【００６６】
さらにまた、請求項１７に記載の発明によれば、請求項１３の発明において、第一の温度検出素子と第二の温度検出素子とがダイオードにより構成され、両者の出力差が所定値以上であったとき、第一の温度検出素子の出力と第二の温度検出素子の出力との内、変動の少ない側の出力を検出温度として計測するようにしたので、外来電磁波の照射があっても正確な温度を計測して電力変換用半導体素子を保護し、正常な動作を維持することが可能な温度検出手段を備えた電力変換装置を得ることができるものである。
【図面の簡単な説明】
【図１】この発明の実施の形態１による温度検出装置および温度検出手段を備えた電力変換装置の概略構成図である。
【図２】この発明の実施の形態１による温度検出装置および温度検出手段を備えた電力変換装置の温度検出装置の回路図である。
【図３】この発明の実施の形態２による温度検出装置および温度検出手段を備えた電力変換装置の概略構成図である。
【図４】この発明の実施の形態２による温度検出装置および温度検出手段を備えた電力変換装置の温度検出装置の回路図である。
【図５】この発明の実施の形態２による温度検出装置および温度検出手段を備えた電力変換装置の温度検出素子の出力特性図である。
【図６】この発明の実施の形態２による温度検出装置および温度検出手段を備えた電力変換装置の温度検出素子の出力特性図である。
【図７】この発明の実施の形態３による温度検出装置および温度検出手段を備えた電力変換装置の温度検出装置の回路図である。
【図８】この発明の実施の形態３による温度検出装置および温度検出手段を備えた電力変換装置の温度検出素子の出力特性図である。
【図９】この発明の実施の形態３による温度検出装置および温度検出手段を備えた電力変換装置の温度検出素子の出力特性図である。
【図１０】この発明の実施の形態４による温度検出装置および温度検出手段を備えた電力変換装置の概略構成図である。
【図１１】車両用電力変換装置のシステム構成図である。
【図１２】従来の電力変換装置の概略構成図である。
【図１３】従来の電力変換装置の概略構成の拡大図である。
【図１４】従来の温度検出手段の構成を示すブロック回路図である。
【図１５】従来の半導体温度検出素子の出力特性図である。
【符号の説明】
６信号処置基板、９ケース、１０、１０ａ、１０ｂ接続ピン、
１１、１１ａ、１１ｂスルーホール、
１５、２７ａ、２７ｂ温度検出用ダイオード（温度検出素子）、
１６、２５ａ、２５ｂ抵抗素子、
１７、２３、２６ａ、２６ｂＡ／Ｄ変換器、
１８ＣＰＵ（温度計測手段）、１９、抵抗素子（電圧降下手段）、
２０ダイオード（検波手段）、２１コンデンサ、
２２差動増幅器、２４ａ、２４ｂサーミスタ（温度検出素子）、
２８、２９、３０、３１配線パターン。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a temperature detection device having a function of correcting a measurement error due to an external electromagnetic wave, and an electric power conversion device such as an inverter or a converter using the temperature detection device.
[0002]
[Prior art]
When the temperature is measured by a temperature measurement circuit using a semiconductor temperature detection element whose voltage-current characteristics change depending on the temperature, an error may occur in the measured temperature in an atmosphere where the temperature measurement circuit is irradiated with electromagnetic waves. 11 to 15 illustrate the configuration of a vehicle power converter using such a temperature detection mechanism, FIG. 11 is a system configuration diagram of the vehicle power converter, and FIG. 12 is a power converter. FIG. 13 is a partially explanatory view of FIG. 12 partially enlarged, FIG. 14 is a block circuit diagram showing the structure of the temperature detecting means, and FIG. 15 is a characteristic diagram of the semiconductor temperature detecting element. Is.
[0003]
In FIG. 11, a system for a vehicle power conversion device functions as a power converter 1 including a power conversion element group 2 such as an inverter and a converter, a controller 3 that gives a control signal to the power converter 1, and a motor or a generator. The signal processing board 6 is composed of a three-phase rotating electrical machine 4 and a DC power source 5 and controls the power conversion element group 2 in the power converter 1 in accordance with signals from the controller 3 and signals from various sensors. Is built-in. The power conversion element group 2 includes power conversion elements 7a to 7f such as power transistors connected to a three-phase bridge, and diodes 8a to 8f connected in reverse parallel to the power conversion elements 7a to 7f. The power of the power source 5 is converted into three-phase AC to drive the rotating electrical machine 4 as a three-phase AC motor, and the output of the rotating electrical machine 4 functioning as a three-phase AC generator is converted to DC to charge the DC power source 5 To do.
[0004]
The power converter 1 is configured as shown in FIG. That is, the power conversion element group 2 is housed in a case 9 formed by resin molding or the like, and the signal processing board 6 is attached to the case 9. The power conversion element group 2 and the signal processing board 6 are The connection pins 10 provided on the group 2 side and the through holes 11 provided on the signal processing board 6 side are electrically connected. The case 9 has terminals 12P for connecting the power conversion element group 2 to the DC power source 5 and Terminals 13U, 13V, and 13W for connecting 12N and the power conversion element group 2 to the rotating electrical machine 4 are provided, and a connector 14 for connecting to the controller 3 is provided on the signal processing board 6.
[0005]
FIG. 13 is an enlarged view of the main points of FIG. A portion for housing the power conversion element group 2 in the case 9 is provided with a temperature detection diode 15 whose voltage-current characteristics change depending on the temperature on the semiconductor substrate, via the connection pin 10 and the through hole 11. It is connected to the signal processing board 6 side. On the signal processing board 6 side, there are provided a resistance element 16, an A / D converter 17 and a CPU 18 which are supplied with a voltage Vcc from a constant voltage power supply (not shown), which are connected as shown in FIG. A temperature detection device is formed.
[0006]
When the voltage Vcc is applied from the constant voltage power source to the resistance element 16, the current If flows through the temperature detection diode 15, and the voltage Vf is generated at both ends of the temperature detection diode 15. As shown in FIG. 15, the characteristics of the temperature detection diode 15 change depending on the temperature. If the resistance element 16 has a stable resistance value with respect to the temperature and the resistance value is R, the temperature detection diode 15 The voltage Vf at both ends is
Vf = Vcc− (R × If)
As a result, the voltage Vf is supplied to the A / D converter 17, A / D converted and supplied to the CPU 18. As a result, the CPU 18 detects the temperature of the power conversion element group 2 and outputs a control signal corresponding to this temperature. For example, the power conversion element group 2 as an inverter is PWM controlled to protect it from temperature destruction.
[0007]
[Problems to be solved by the invention]
In this way, the temperature is protected, but a capacitor is generally provided between the power supply for supplying power to the constant voltage power supply and GND, and impedance is relatively high for a relatively high frequency alternating current. It will be close to zero. Therefore, the temperature detection diode 15 and the resistance element 16 shown in FIG. 14 constitute a loop circuit for a relatively high frequency alternating current, and the loop circuit has the temperature detection diode 15 and thus detects the wave. A circuit will be formed. Therefore, when an external electromagnetic wave is irradiated to this loop circuit, a current is induced in the circuit, detected, and converted into a direct current component, which is added to If.
[0008]
That is, the current due to the external electromagnetic wave flows only in the forward direction of the temperature detecting diode 15, and as a result of the increase in the current If, the voltage Vf across the temperature detecting diode 15 also increases, and the A / D converter. A voltage different from the actual temperature is applied to the CPU 17 and the CPU 18, and erroneous control is performed. Further, since the current due to the external electromagnetic wave does not flow in the reverse direction of the temperature detection diode 15, Vf fluctuates corresponding to the period of the external electromagnetic wave, and the output of the A / D converter 17 continues to fluctuate and is not stable. It also had.
[0009]
The present invention has been made to solve such a problem, and can accurately measure the temperature even when the external electromagnetic wave is irradiated, and can detect and correct the temperature detection value by detecting the external electromagnetic wave. An object of the present invention is to obtain a possible temperature detection device and a power conversion device including the temperature detection means.
[0010]
[Means for Solving the Problems]
The temperature detection device according to the present invention includes a temperature detection element that outputs a voltage corresponding to the temperature, a detection means, and a voltage drop means, and when an external electromagnetic wave is irradiated, an induced current generated by the electromagnetic wave irradiation is generated. The external electromagnetic wave detection means for detecting the electromagnetic wave irradiation by being detected by the detection means and outputted as the voltage drop value of the voltage drop means, and the output of the temperature detection element and the output of the external electromagnetic wave detection means are inputted to detect the external electromagnetic wave. Temperature measuring means for determining whether the measured temperature measured by the temperature detecting element is correct or not based on the output of the means.
[0011]
Further, the detection means is configured by a detection circuit using a diode.
Furthermore, the detection means constitutes an antenna for detecting electromagnetic wave irradiation from the outside.
[0012]
Furthermore, when the external electromagnetic wave detection means detects external electromagnetic wave irradiation, the temperature measurement means invalidates the output of the temperature detection element.
Further, when the external electromagnetic wave detection means detects external electromagnetic wave irradiation, the temperature measurement means corrects the input value from the temperature detection element in accordance with the output value of the external electromagnetic wave detection means.
[0013]
Further, a first temperature that receives a current supply from the first constant voltage power source via the first fixed resistor and forms a first loop circuit including the first constant voltage power source and the first fixed resistor The detection element and the first temperature detection element are provided close to each other and receive a current supply from the second constant voltage power source through the second fixed resistor, and the second constant voltage power source and the second fixed voltage source. A second temperature detecting element forming a second loop circuit including a resistor, and a temperature measuring means for measuring the temperature by inputting the output of the first temperature detecting element and the output of the second temperature detecting element. When an external electromagnetic wave linking to the first loop circuit and the second loop circuit is irradiated, an induced current due to the external electromagnetic wave flowing to the first temperature detection element and a current flowing to the second temperature detection element The induced current due to the external electromagnetic wave becomes the opposite polarity and the temperature is detected. It is obtained so as to be superimposed on the output of the device.
[0014]
Furthermore, the first temperature detection element and the second temperature detection element are configured by diodes.
Further, the first temperature detection element and the second temperature detection element are configured by a thermistor.
Further, the temperature measuring means compares the output of the first temperature detection element with the output of the second temperature detection element, and determines the presence or absence of external electromagnetic wave irradiation from the difference between both outputs.
[0015]
Furthermore, when the temperature measuring means detects the irradiation of the external electromagnetic wave, an intermediate value between the output of the first temperature detecting element and the output of the second temperature detecting element is measured as the detected temperature.
In addition, when the temperature measuring means detects the irradiation of the external electromagnetic wave, the output on the side with less fluctuation among the output of the first temperature detecting element and the output of the second temperature detecting element is measured as the detected temperature. It is a thing.
[0018]
Furthermore, a power conversion device provided with a temperature detecting means according to the present invention is provided in the vicinity of a semiconductor element for power conversion that inputs DC power or AC power and converts it into AC power or DC power, and the semiconductor element. Temperature detection element, detection means and voltage drop means, and when there is external electromagnetic wave irradiation, the induced current due to electromagnetic wave irradiation is detected by the detection means and output as the voltage drop value of the voltage drop means The external electromagnetic wave detection means for detecting the external electromagnetic wave and the temperature measurement means for measuring the temperature of the semiconductor element by inputting the output of the temperature detection element and the output of the external electromagnetic wave detection means. When the detected value is equal to or greater than a predetermined value, it is determined that the temperature detection value of the temperature measuring means is incorrect.
[0019]
In addition, a power conversion semiconductor element that inputs DC power or AC power and converts it into AC power or DC power, and a semiconductor element that is disposed in the vicinity of the semiconductor element, is connected to the first constant voltage power source via a first fixed resistor. And a first temperature detecting element forming a first loop circuit including a first constant voltage power source and a first fixed resistor, and provided in proximity to the first temperature detecting element. A second temperature detection unit that receives a current supply from the second constant voltage power source through the second fixed resistor and forms a second loop circuit including the second constant voltage power source and the second fixed resistor. And temperature measuring means for measuring the temperature by inputting the output of the first temperature detecting element and the output of the second temperature detecting element, and the first loop circuit and the second loop circuit are connected to each other. When the external electromagnetic wave is exchanged, the first temperature detection element The induced current caused by the external electromagnetic wave and the induced current caused by the external electromagnetic wave flowing through the second temperature detection element are reversed in polarity and superimposed on the output of the temperature detection element, so that the first temperature detection element and the second temperature detection Whether the detected temperature is correct or not is determined based on the output difference from the element.
[0021]
Furthermore, the operation of the power conversion semiconductor element is stopped when it is determined that the detected value of the temperature measuring means is incorrect.
In addition, when it is determined that the detected value of the temperature measuring means is incorrect, the temperature measuring means corrects the output of the temperature detecting element corresponding to the output value of the external electromagnetic wave detecting means.
[0022]
Furthermore, when the first temperature detection element and the second temperature detection element are constituted by a thermistor and the output difference between the two is equal to or greater than a predetermined value, the output of the first temperature detection element and the second temperature detection element The detected temperature is an intermediate value with the output of.
Furthermore, when the first temperature detection element and the second temperature detection element are constituted by diodes and the output difference between the two is greater than or equal to a predetermined value, the output of the first temperature detection element and the second temperature detection element Among the outputs of the elements, the output on the side with less fluctuation is measured as the detected temperature.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1 FIG.
1 and 2 illustrate a temperature detection device according to Embodiment 1 of the present invention. Like the conventional example, FIG. 1 and FIG. 2 show a case where a temperature detection device is used for a vehicle power conversion device. FIG. 2 is a schematic configuration diagram of a temperature detection device built in the power converter, and FIG. 2 is a block diagram showing a circuit configuration of the temperature detection device. In addition, the same code | symbol is provided to the same functional part as said conventional example, and the system configuration | structure of a power converter device is the same as that of what was shown in FIG. 11 of the prior art example.
[0024]
In FIG. 1, the power converter includes a resin case 9 that houses a group of power conversion elements such as an inverter and a converter, and a signal processing board 6 attached to the case 9. And a temperature detection diode 15 whose voltage-current characteristics change according to temperature is housed. The temperature detection diode 15 is connected to the signal processing board 6 side through the connection pin 10 and the through hole 11. It is configured as follows. Similarly, control poles of semiconductor elements such as inverters and converters (not shown) housed in the case 9 are also connected to the signal processing board 6 side through other connection pins and through holes.
[0025]
On the signal processing board 6 side, a resistance element 16 having a resistance value R that receives supply of a voltage Vcc from a constant voltage power source (not shown), an A / D converter 17 to which a voltage between terminals of the temperature detection diode 15 is input, CPU 18 to which a digital voltage value from / D converter 17 is input is provided, and is connected between both terminals of resistance element 19 and diode 20 having resistance value Ra forming a loop circuit and resistance element 19. A capacitor 21, a differential amplifier 22 that outputs a voltage corresponding to the voltage between both terminals of the resistance element 19, and an A / D that converts the output of the differential amplifier 22 to A / D and supplies a digital voltage value to the CPU 18. A converter 23 is provided. FIG. 2 is a block diagram showing these connections.
[0026]
In the temperature detection device according to the first embodiment of the present invention configured as described above, the resistance element 19 and the diode 20 forming the loop circuit form a loop antenna as an external electromagnetic wave detection means. In the state where electromagnetic waves are not applied to the power converter from the outside, no current flows through the loop circuit, that is, the resistance element 19, and therefore the voltage value Va input to the differential amplifier 22 is zero. The signal is output from the differential amplifier 22 and A / D converted by the A / D converter 23 and supplied to the CPU 18 as a temperature measuring means.
[0027]
In the state where the power converter is irradiated with the external electromagnetic wave, a current is induced in the loop circuit by the external electromagnetic wave interlinked with the loop circuit composed of the resistance element 19 and the diode 20. Since the current flows only in the direction and the reverse current is blocked, the resistance element 19 generates a pulsating voltage of a half wave in a certain direction synchronized with the period of the external electromagnetic wave. This voltage charges the capacitor 21 connected in parallel to the resistance element 19, the time constant of the charge / discharge circuit comprising the resistance element 19 and the capacitor 21 is a sufficient value, and the frequency and electric field strength of the external electromagnetic wave are constant. If so, the terminal voltage of the capacitor 21 is charged to a substantially constant value.
[0028]
This voltage is supplied to the differential amplifier 22 and further digitally converted by the A / D converter 23 and supplied to the CPU 18. The CPU 18 determines the presence / absence of an external electromagnetic wave and the electric field strength from the presence / absence and magnitude of the input voltage value. Detect. On the other hand, as described in the above-described conventional example, the external electromagnetic wave is also applied to the loop circuit including the temperature detection diode 15 as the temperature detection element and the resistance element 16, and this causes an error in the detection temperature. The CPU 18 can detect that there is an error in the detected temperature based on the voltage value input from the A / D converter 23 to the CPU 18. When the output voltage from the A / D converter 23 exceeds a predetermined value, the detected temperature value is obtained. It can be invalidated, or an error in the detected temperature can be corrected by the value of the output voltage from the A / D converter 23 to detect an accurate temperature.
[0029]
As described above, when this temperature detection device is used in a vehicle power conversion device, the power conversion device converts power from a DC power source of an electric vehicle or a hybrid vehicle into three-phase AC power and applies it to a rotating electrical machine. Or the three-phase AC power generated by the rotating electrical machine is converted to DC power to charge the DC power supply. It can be measured and can be controlled to prevent malfunction and destruction of a switching element used in the power converter.
[0030]
Embodiment 2. FIG.
FIGS. 3 to 6 illustrate a temperature detection device according to Embodiment 2 of the present invention. Like the case of Embodiment 1, FIGS. 3 to 6 show a case where the temperature detection device is used in a vehicle power conversion device. 3 is a schematic configuration diagram of a temperature detection device built in the power conversion device, FIG. 4 is a block diagram showing a circuit configuration of the temperature detection device, and FIG. 5 shows an output value of the temperature detection element in a state where no external electromagnetic wave is irradiated. FIG. 6 is a characteristic diagram showing an output value of the temperature detection element in a state where an external electromagnetic wave is irradiated. Here, the same reference numerals are given to the same functional parts as in the above-described conventional example, and the system configuration of the power conversion device is the same as that shown in FIG. 11 of the conventional example.
[0031]
In FIG. 3, the power converter includes a resin case 9 that houses a group of power conversion elements such as an inverter and a converter, and a signal processing board 6 attached to the case 9. Thermistors 24a and 24b are provided close to each other as temperature detecting elements, and the thermistors 24a and 24b are provided close to the signal processing board 6 via connection pins 10a and 10b and through holes 11a and 11b. Configured to be connected. Similarly, control poles of semiconductor elements such as inverters and converters (not shown) housed in the case 9 are also connected to the signal processing board 6 side through other connection pins and through holes.
[0032]
On the signal processing board 6 side, a resistance element 25a having a resistance value R receiving a voltage supply from the constant voltage power supply Vcc1, a resistance element 25b having a resistance value R receiving a voltage supply from the constant voltage power supply Vcc2, and output voltages of the thermistors 24a and 24b. Are input to the A / D converters 26a and 26b, and a CPU 18 as temperature measuring means to which the digital voltage values from the A / D converters 26a and 26b are input. As shown in FIGS. 3 and 4, the thermistors 24a and 24b have one terminal connected to the resistor 25a or 25b and the analog input terminal of the A / D converter 26a or 26b, respectively, and the other terminal. Is grounded (connected to GND).
[0033]
Analog input terminals of the A / D converters 26a and 26b are also arranged close to each other and connect the connection pins 10a and 10b, the through holes 11a and 11b, and the thermistors 24a and 24b, the resistance elements 25a and 25b, and the like. The wiring patterns to be arranged are also arranged close to each other. Further, a current flows from the constant voltage power supply Vcc1 to the GND through the resistance element 25a and the thermistor 24a, and a circuit for detecting temperature based on the voltage value of the thermistor 24a and a current from the constant voltage power supply Vcc2 to the GND through the resistance element 25b and the thermistor 24b The circuits that detect the temperature based on the voltage value of the thermistor 24b are the same as the circuits themselves and the circuit constants. However, the loop circuit is arranged so that induced currents Is caused by external electromagnetic waves, which will be described later, are opposite to each other. Is formed.
[0034]
In the temperature detection device according to the second embodiment of the present invention configured as described above, the thermistor 24a and the thermistor 24b are disposed close to each other when no electromagnetic wave is applied to the power conversion device from the outside. As shown in FIG. 5, when the resistance values of the thermistors 24a and 24b are Rs, the A / D converter 26a and the A / D converter 26b respectively have the same temperature as shown in FIG.
Va = Vcc × Rs / (R + Rs)
Thus, almost the same temperature data is detected.
[0035]
When an external electromagnetic wave is irradiated to the power converter, the constant voltage power supplies Vcc1 and Vcc2 are connected to GND with a capacitor (not shown) as described in the above conventional example, so that the resistance element 25a and the thermistor 24a are connected. Each circuit of the resistance element 25b and the thermistor 24b forms a loop circuit for a relatively high frequency alternating current, and an induced current Is is generated by induction of an external electromagnetic wave. The induced currents flowing through the thermistors 24a and 24b are substantially the same value in the same direction because the thermistors 24a and 24b are arranged close to each other.
[0036]
  That is, when the induced current Is flows in the direction of GND from the constant voltage power supply Vcc1 to the thermistor 24a through the resistance element 25a and the thermistor 24a at a certain point in time when the induced current is flowing, Thermistor 24b and resistance element25 bThe induced current Is flows in the direction of the constant voltage power supply Vcc2. Therefore, there is no voltage on the A / D converter 26a side.
    Va1 = (Vcc × Rs / (R + Rs)) + (Rs × Is)
Is input to the A / D converter 26b side.
    Va2 = (Vcc × Rs / (R + Rs)) − (Rs × Is)
Will be entered.
[0037]
FIG. 6 shows the voltages Va1 and Va2. A voltage in which the phase of the voltage (Rs × Is) by the AC induced current Is is opposite to the detected value of each temperature is superimposed on / D converter 26a and A / D converter 26b. Therefore, the CPU 18 inputs the outputs of the A / D converter 26a and the A / D converter 26b, and compares them to determine that there is no influence of external electromagnetic waves if the difference is less than a predetermined value. If so, it can be determined that it is affected by external electromagnetic waves.
[0038]
Further, when the CPU 18 inputs the outputs of the A / D converter 26a and the A / D converter 26b and determines that the CPU 18 is affected by the external electromagnetic wave, the CPU 18 determines the output voltage of the A / D converter 26a. By calculating an intermediate value with respect to the output voltage of the A / D converter 26b and making this calculated value a voltage corresponding to the temperature, temperature detection that is not affected by external electromagnetic waves becomes possible, and the external electromagnetic waves are transmitted to the power converter. Even in the state of being irradiated, an accurate temperature can be measured, and it is possible to prevent malfunction and destruction of a switching element used in the power converter.
[0039]
Embodiment 3 FIG.
FIGS. 7 to 9 illustrate a temperature detection device according to a third embodiment of the present invention, and show a case where a temperature detection device is used for a vehicle power converter as in the first and second embodiments. FIG. 7 is a block diagram showing a circuit configuration of the temperature detection device, FIG. 8 is a characteristic diagram showing an output value of the temperature detection element in a state where no external electromagnetic wave is irradiated, and FIG. 9 is irradiated with the external electromagnetic wave. It is a characteristic view which shows the output value of the temperature detection element in a state, The temperature detection device in this embodiment replaces the thermistor of the temperature detection device by Embodiment 2 with the diode for temperature detection. Here, the same reference numerals are given to the same functional portions as those in the conventional example, and the system configuration of the power converter is the same as that shown in FIG.
[0040]
In FIG. 7, temperature detection diodes 27a and 27b are provided as temperature detection elements on the semiconductor substrate of the resin case 9 that houses the power conversion element group described in the first embodiment, and the temperature detection diode 27a. Is supplied with power from the constant voltage power supply Vcc1 through the resistance element 25a, and the temperature detection diode 27b is supplied with power from the constant voltage power supply Vcc2 through the resistance element 25b, and each of the temperature detection diodes 27a and 27b The cathode side of is connected to GND. The voltage of the temperature detection diode 27a is input to the CPU 18 as the temperature measurement means via the A / D converter 26a, and the voltage of the temperature detection diode 27b is input via the A / D converter 26b.
[0041]
Temperature detection diodes 27a and 27b are provided close to each other in the same manner as thermistors 25a and 25b in the second embodiment, and wirings from temperature detection diodes 27a and 27b to A / D converters 26a and 26b are also close. Provided. Therefore, substantially the same temperature-corresponding voltage is generated in the temperature detection diodes 27a and 27b, a loop circuit composed of the temperature detection diode 27a and the resistance element 25a, the temperature detection diode 27b and the resistance element 25b, The induced current caused by almost the same external electromagnetic wave is generated in the loop circuit consisting of
[0042]
In the temperature detection device according to the third embodiment of the present invention configured as described above, the voltages of the temperature detection diodes 27a and 27b are substantially equal to each temperature as shown in FIG. A value is given to the A / D converters 26a and 26b, and the CPU 18 detects substantially the same temperature data.
[0043]
In the state where the external electromagnetic wave is applied, the induced current flows only in the forward direction of the temperature detecting diode 27a or 27b. Therefore, the ripple voltage due to the induced current is alternately generated as shown in FIG. The value where the value does not occur indicates the correct temperature. Therefore, the CPU 18 that inputs the voltage from the A / D converters 26a and 26b compares both, and if the difference between the two is less than or equal to a predetermined value, there is no influence from the external electromagnetic wave, and if the difference between the two is greater than the predetermined value, Therefore, it is possible to perform the processing by determining that the voltage has been received, and it is possible to determine that the stable value in which the ripple voltage is not generated is the correct temperature.
[0044]
In this way, the presence or absence of an external electromagnetic wave is determined, and the accurate temperature is detected, thereby measuring the accurate temperature even in a state where the external electromagnetic wave is irradiated to the power converter, and switching used in the power converter. It is possible to prevent malfunctions and destruction of elements and the like.
[0045]
Embodiment 4 FIG.
FIG. 10 is a schematic configuration diagram of a state in which a temperature detection device according to Embodiment 4 of the present invention is used in a power conversion device. In the figure, a temperature detection diode 15 is provided on the semiconductor substrate of the resin case 9 that houses the power conversion element group described in the first embodiment, as in the first embodiment. 15 is configured to be connected to the signal processing board 6 side through the connection pin 10 and the through hole 11, and the signal processing board 6 side has a resistance value R that is supplied with a voltage Vcc from a constant voltage power supply (not shown). A resistance element 16, an A / D converter 17 to which a voltage between terminals of the temperature detection diode 15 is input, and a CPU 18 as a temperature measuring unit to which a digital voltage value from the A / D converter 17 is input are provided. It has been.
[0046]
The temperature detection diode 15 formed on the semiconductor substrate and the connection pin 10 are connected by, for example, wiring patterns 28 and 29 formed on the semiconductor substrate. The wiring pattern 28 and the wiring pattern 29 intersect each other. It is configured as a twisted pair. Further, the wiring patterns 30 and 31 are also connected between the through hole 11 and the ground pattern GND provided on the A / D converter 17, the resistance element 16, and the signal processing board 6. Similarly, the patterns 31 are provided so as to intersect with each other to form a twisted pair.
[0047]
In the temperature detection device according to the fourth embodiment of the present invention configured as described above, the temperature detection diode 15 provided in the vicinity of the switching element (not shown) of the power conversion device is the same as in the first embodiment and the conventional example. As described above, the temperature of the power conversion element group is measured, and when the power conversion device is irradiated with the external electromagnetic wave, the external electromagnetic wave is linked to the loop circuit formed by the temperature detecting diode 15 and the resistance element 16. Inductive current is generated, but the circuit composed of the temperature detection diode 15 and the resistance element 16 has a configuration in which the wiring pattern 28 and the wiring pattern 29 and the wiring pattern 30 and the wiring pattern 31 are twisted as a twisted pair. For this reason, the induced current is canceled and the voltage caused by the induced current applied to the A / D converter 17 becomes extremely small.
[0048]
As described above, according to the configuration of the temperature detection device according to the fourth embodiment of the present invention, the induced current due to the external electromagnetic wave becomes extremely small, so that an accurate temperature can be detected, and the power conversion device has an external Even in the state of being irradiated with electromagnetic waves, it is possible to measure an accurate temperature and prevent malfunction or destruction of a switching element or the like used in the power converter. In this configuration, even if the temperature detection element is not a temperature detection diode but a thermistor as in the second embodiment, the same result can be obtained.
[0049]
【The invention's effect】
As described above, according to the temperature detection device of the present invention, the temperature detection device according to the first aspect of the present invention includes the temperature detection element that outputs a voltage corresponding to the temperature, the detection unit, and the voltage drop unit. When an electromagnetic wave is radiated from the sensor, the induced current is detected by the detection means, and the external electromagnetic wave detection means for generating a voltage drop value between both terminals of the voltage drop means, and the outputs of the temperature detection element and the external electromagnetic wave detection means are input. In addition, since the temperature measuring means for determining the correctness of the measured temperature measured by the temperature detecting element based on the output from the external electromagnetic wave detecting means is provided, the external temperature detecting means can be used without changing the configuration of the conventional temperature measuring unit. It becomes possible to detect the presence or absence of external electromagnetic wave irradiation simply by adding the detection means and voltage drop means, and a temperature detection device having a function of detecting the irradiation intensity of the external electromagnetic wave is obtained. It is what it is.
[0050]
According to the invention described in claim 2, in the invention of claim 1, the detection means is constituted by a detection circuit using a diode. For example, in the first and second aspects of the invention, since the detection means constitutes an antenna for detecting external electromagnetic wave irradiation, it is possible to obtain an external electromagnetic wave detection means that is small and inexpensive and has a high degree of freedom in installation. It is something that can be done.
[0051]
Furthermore, according to the invention of claim 4, in the inventions of claims 1 to 3, when the external electromagnetic wave detection means detects external electromagnetic wave irradiation, the temperature measurement means invalidates the output of the temperature detection element. As a result, when there is an error in temperature detection due to the irradiation of electromagnetic waves, it is possible to determine this and prevent troubles caused by misrecognition.
[0052]
According to the fifth aspect of the present invention, in the first to third aspects of the invention, when the external electromagnetic wave detection means detects external electromagnetic wave irradiation, the temperature measurement means responds to the detection value of the external electromagnetic wave detection means. Thus, the output of the temperature detecting element is corrected, so that correction according to the electric field strength can be performed even when electromagnetic waves are irradiated, and accurate temperature information can always be obtained.
[0053]
Furthermore, according to the invention described in claim 6, the temperature detection element receives a current supply from the constant voltage power supply via the fixed resistor, and the loop circuit formed by the temperature detection element, the constant voltage power supply, and the fixed resistance. Two sets were formed close to each other, and the temperature measurement means measured the temperature by inputting the outputs of the two sets of temperature detection elements, and there was irradiation of external electromagnetic waves linked to the two sets of loop circuits. Since the induced current flowing in the first temperature detecting element and the induced current flowing in the second temperature detecting element have opposite polarities and are superimposed on the output of the temperature detecting element, two temperature detection The presence / absence of external electromagnetic wave irradiation and the electric field intensity can be easily detected from the output difference of the element.
[0054]
Furthermore, according to the invention described in claim 7, since the two temperature detecting elements according to the invention described in claim 6 are configured by diodes, and according to the invention described in claim 8, Since the two temperature detecting elements according to the invention of the sixth aspect are composed of the thermistor, it is possible to obtain an external electromagnetic wave detecting means which is small and inexpensive and has a high degree of freedom in installation.
[0055]
According to the ninth aspect of the present invention, in the sixth to eighth aspects of the present invention, the temperature measuring means compares the output of the first temperature detecting element with the output of the second temperature detecting element and outputs both of them. Therefore, it is possible to easily determine the presence or absence of a detection temperature error due to the irradiation of the external electromagnetic wave from the output difference between the two temperature detection elements.
[0056]
Furthermore, according to the invention of claim 10, in the invention of claim 8, when the temperature measuring means detects the irradiation of the external electromagnetic wave, the output of the first temperature detection element and the second temperature detection element Since the detection temperature is measured as an intermediate value with the output, the detection temperature error due to external electromagnetic wave irradiation can be easily corrected, and accurate temperature can be measured even when external electromagnetic wave irradiation occurs. It will be.
[0057]
According to the eleventh aspect of the invention, in the seventh aspect of the invention, when the temperature measuring means detects the irradiation of the external electromagnetic wave, the output of the first temperature detecting element and the output of the second temperature detecting element. Since the output on the side with less fluctuation is measured as the detected temperature, it is possible to measure the accurate temperature even when there is irradiation with an external electromagnetic wave.
[0060]
  Furthermore, in the power conversion device provided with the temperature detection means according to the present invention,Claim 12According to the invention, the semiconductor element for power conversion, the temperature detection element disposed in the vicinity of the semiconductor element, the external electromagnetic wave detection means including the detection means and the voltage drop means, and the output of the temperature detection element And a temperature measuring means for measuring the temperature of the semiconductor element by inputting the output of the external electromagnetic wave detecting means, the external electromagnetic wave detecting means detects external radio wave irradiation, and the detected value is equal to or greater than a predetermined value. At this time, since the detection value of the temperature measuring means is determined to be incorrect, the temperature at which damage to the power conversion semiconductor element due to erroneous detection of temperature due to irradiation of external electromagnetic waves can be prevented in advance. A power converter provided with a detecting means can be obtained.
[0061]
  Also,Claim 13According to the invention described in (2), two sets of loop circuits arranged in the vicinity of the power conversion semiconductor element, and disposed in the vicinity of the semiconductor element, the temperature detection element, the constant voltage power source, and the fixed resistor, The temperature measurement means for measuring the temperature by inputting the outputs of the two sets of temperature detection elements, and when the external electromagnetic waves linked to the two sets of loop circuits are irradiated, the first temperature detection element The induced current that flows and the induced current that flows to the second temperature detection element are superimposed on the output of the temperature detection element with opposite polarities, and due to the output difference between the first temperature detection element and the second temperature detection element. Since the correctness of the detected temperature is determined, a power conversion device having a temperature detection means capable of preventing damage to a power conversion semiconductor element or the like due to erroneous detection of temperature due to irradiation of an external electromagnetic wave Can get in Is shall.
[0063]
  Furthermore,Claim 14According to the invention described inClaims 12 and 13In the present invention, the operation of the power conversion semiconductor element is stopped when it is determined that the detected value of the temperature measuring means is incorrect, so that malfunction and element destruction due to erroneous temperature detection are prevented in advance. Therefore, it is possible to obtain a power conversion device including temperature detection means that can perform the above operation.
[0064]
  Also,Claim 16According to the invention described inClaim 12In this invention, when it is determined that the detection value of the temperature measurement means is incorrect, the temperature measurement means corrects the output of the temperature detection element in accordance with the output value of the external electromagnetic wave detection means. Accordingly, it is possible to obtain a power conversion device including a temperature detection unit that can prevent malfunction due to detection and element destruction.
[0065]
  further,Claim 16According to the invention described inClaim 13In the invention, when the first temperature detection element and the second temperature detection element are constituted by a thermistor and the output difference between the two is equal to or greater than a predetermined value, the output of the first temperature detection element and the second temperature Since the detection temperature is set to the intermediate value with the output of the detection element, the detection temperature error due to external electromagnetic wave irradiation can be easily corrected. Accordingly, it is possible to obtain a power conversion device including a temperature detecting unit that protects the conversion semiconductor element and can maintain a normal operation.
[0066]
  Furthermore,Claim 17According to the invention described inClaim 13In the invention, when the first temperature detection element and the second temperature detection element are constituted by a diode and the output difference between the two is equal to or greater than a predetermined value, the output of the first temperature detection element and the second temperature Since the output on the side with less fluctuation of the output of the detection element is measured as the detection temperature, even if there is an external electromagnetic wave irradiation, the accurate temperature is measured to protect the semiconductor element for power conversion and normal It is possible to obtain a power conversion device including a temperature detection means capable of maintaining a stable operation.
[Brief description of the drawings]
1 is a schematic configuration diagram of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 1 of the present invention;
FIG. 2 is a circuit diagram of a temperature detection device of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 1 of the present invention.
FIG. 3 is a schematic configuration diagram of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 2 of the present invention.
FIG. 4 is a circuit diagram of a temperature detection device of a power conversion device provided with a temperature detection device and temperature detection means according to Embodiment 2 of the present invention.
FIG. 5 is an output characteristic diagram of a temperature detection element of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 2 of the present invention.
FIG. 6 is an output characteristic diagram of a temperature detection element of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 2 of the present invention.
FIG. 7 is a circuit diagram of a temperature detection device of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 3 of the present invention.
FIG. 8 is an output characteristic diagram of a temperature detection element of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 3 of the present invention.
FIG. 9 is an output characteristic diagram of a temperature detection element of a power conversion device including a temperature detection device and temperature detection means according to a third embodiment of the present invention.
FIG. 10 is a schematic configuration diagram of a power conversion device including a temperature detection device and temperature detection means according to Embodiment 4 of the present invention.
FIG. 11 is a system configuration diagram of a vehicle power conversion device.
FIG. 12 is a schematic configuration diagram of a conventional power converter.
FIG. 13 is an enlarged view of a schematic configuration of a conventional power converter.
FIG. 14 is a block circuit diagram showing a configuration of a conventional temperature detecting means.
FIG. 15 is an output characteristic diagram of a conventional semiconductor temperature detecting element.
[Explanation of symbols]
6 signal treatment board, 9 case, 10, 10a, 10b connection pin,
11, 11a, 11b Through hole,
15, 27a, 27b Temperature detection diode (temperature detection element),
16, 25a, 25b resistance elements,
17, 23, 26a, 26b A / D converter,
18 CPU (temperature measuring means), 19, resistance element (voltage drop means),
20 diode (detection means), 21 capacitor,
22 differential amplifier, 24a, 24b thermistor (temperature detection element),
28, 29, 30, 31 Wiring pattern.

Claims

A temperature detecting element that outputs a voltage corresponding to temperature, a detecting means and a voltage dropping means, and when there is electromagnetic wave irradiation from the outside, an induced current generated by the electromagnetic wave irradiation is detected by the detecting means, and the voltage drop The external electromagnetic wave detection means for detecting the electromagnetic wave irradiation by being output as a voltage drop value of the means, the output of the temperature detection element and the output of the external electromagnetic wave detection means are input, the output of the external electromagnetic wave detection means, A temperature detection apparatus comprising temperature measurement means for performing correctness / incorrectness determination of a measured temperature measured by a temperature detection element.

2. The temperature detection apparatus according to claim 1, wherein the detection means includes a detection circuit using a diode.

The temperature detection device according to claim 1 or 2, wherein the detection means constitutes an antenna that detects electromagnetic wave irradiation from the outside.

4. The temperature measuring unit invalidates the output of the temperature detecting element when the external electromagnetic wave detecting unit detects external electromagnetic wave irradiation. Temperature detection device.

The temperature measurement unit corrects an input value from the temperature detection element according to an output value of the external electromagnetic wave detection unit when the external electromagnetic wave detection unit detects external electromagnetic wave irradiation. The temperature detection apparatus as described in any one of Claims 1-3.

A first temperature that receives a current supply from a first constant voltage power source via a first fixed resistor and forms a first loop circuit including the first constant voltage power source and the first fixed resistor The detection element and the first temperature detection element are provided close to each other, receive current from the second constant voltage power source via the second fixed resistor, and receive the second constant voltage power source and the second temperature detection element. A second temperature detection element that forms a second loop circuit including a fixed resistor, and a temperature at which temperature measurement is performed by inputting the output of the first temperature detection element and the output of the second temperature detection element Measuring means, and when an external electromagnetic wave linking to the first loop circuit and the second loop circuit is irradiated, an induced current caused by the external electromagnetic wave flowing in the first temperature detecting element and the second Induced current due to external electromagnetic waves flowing in the temperature sensing element Temperature detecting apparatus characterized by being superimposed on the output of the temperature detecting element respectively is reverse polarity.

The temperature detection apparatus according to claim 6, wherein the first temperature detection element and the second temperature detection element are diodes.

The temperature detection device according to claim 6, wherein the first temperature detection element and the second temperature detection element are thermistors.

7. The temperature measuring means compares the output of the first temperature detection element with the output of the second temperature detection element, and determines the presence or absence of external electromagnetic wave irradiation from the difference between both outputs. The temperature detection device according to claim 8.

The intermediate temperature between the output of the first temperature detecting element and the output of the second temperature detecting element is measured as a detected temperature when the temperature measuring means detects the irradiation of the external electromagnetic wave. 8. The temperature detection device according to 8.

When the temperature measuring means detects the irradiation of the external electromagnetic wave, the output on the side with less fluctuation is measured as the detected temperature among the output of the first temperature detecting element and the output of the second temperature detecting element. The temperature detection device according to claim 7.

A power conversion semiconductor element that inputs DC power or AC power and converts it into AC power or DC power, a temperature detection element disposed in the vicinity of the semiconductor element, a detection means, and a voltage drop means. External electromagnetic wave detection means for detecting an external electromagnetic wave by detecting an induced current due to electromagnetic wave irradiation by the detection means and outputting it as a voltage drop value of the voltage drop means when there is electromagnetic wave irradiation, output of the temperature detection element And a temperature measuring means for measuring the temperature of the semiconductor element by inputting the output of the external electromagnetic wave detecting means, the external electromagnetic wave detecting means detects external electromagnetic wave irradiation, and the detected value is a predetermined value or more. If there is, a power conversion apparatus comprising temperature detection means, wherein the temperature detection value of the temperature measurement means is determined to be incorrect.

A power conversion semiconductor element that receives DC power or AC power and converts it into AC power or DC power, disposed near the semiconductor element, and supplied with current from a first constant voltage power source via a first fixed resistor And a first temperature detection element forming a first loop circuit including the first constant voltage power source and the first fixed resistor, provided in proximity to the first temperature detection element, A second temperature that receives a current supply from the second constant voltage power source through the second fixed resistor and forms a second loop circuit including the second constant voltage power source and the second fixed resistor. A temperature measuring means for measuring a temperature by inputting a detection element, an output of the first temperature detection element and an output of the second temperature detection element; and the first loop circuit and the second loop circuit When there is irradiation of external electromagnetic waves interlinked with An induced current caused by an external electromagnetic wave flowing in the first temperature detection element and an induced current caused by an external electromagnetic wave flowing in the second temperature detection element are respectively reversed in polarity and superimposed on the output of the temperature detection element. A power conversion apparatus comprising temperature detection means, wherein the correctness of the detected temperature is determined based on an output difference between one temperature detection element and the second temperature detection element.

The temperature detection unit according to claim 12 or 13 , wherein when the detection value of the temperature measurement unit is determined to be incorrect, the operation of the power conversion semiconductor element is stopped. Power conversion device provided.

When the detected value of the temperature measuring means is determined to be erroneous, claim wherein the temperature measuring means and corrects the output of the temperature detecting element in response to the output value of the external electromagnetic waves detecting means 12 The power converter device provided with the temperature detection means of description.

When the first temperature detection element and the second temperature detection element are constituted by a thermistor and the output difference between the two is a predetermined value or more, the output of the first temperature detection element and the second temperature The power conversion device provided with the temperature detecting means according to claim 13 , wherein an intermediate value with respect to the output of the detecting element is set as a detected temperature.

When the first temperature detection element and the second temperature detection element are constituted by a diode and the difference between the outputs is equal to or greater than a predetermined value, the output of the first temperature detection element and the second temperature 14. The power conversion apparatus with temperature detection means according to claim 13 , wherein an output on a side with less fluctuation among outputs of the detection element is measured as a detection temperature.