JP3733180B2 - Projection exposure apparatus and device manufacturing method using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a projection exposure apparatus and a device manufacturing method using the same, and in particular, is formed on a mask surface or a reticle surface (hereinafter referred to as “reticle surface”) as a first object in a projection exposure apparatus for semiconductor manufacturing. This is suitable for performing relative alignment (alignment) of a fine electronic circuit pattern such as an IC, LSI, or the like when projecting onto a wafer surface as a second object.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a projection exposure apparatus for manufacturing a semiconductor is required to be able to project and expose a circuit pattern on a reticle surface onto a wafer surface with a high resolving power as the density of integrated circuits increases. As a method of improving the projection resolution of the circuit pattern, for example, a method of increasing the NA of the projection optical system by fixing the wavelength of the exposure light, a light beam having a short wavelength from the g-line to the i-line, or an excimer There are many methods that use light having a short wavelength such as 248 nm or 193 nm emitted from a laser.
[0003]
On the other hand, with the miniaturization of circuit patterns, it has been required to align a reticle or mask on which an electronic circuit pattern is formed with a wafer with high precision. When aligning the reticle and the wafer, light (exposure light) that exposes the resist applied on the wafer surface and light that is not exposed (hereinafter referred to as “non-exposure light”), for example, a wavelength of 633 nm from a He—Ne laser. There is a method of using the light.
[0004]
The present applicant has proposed an alignment apparatus using non-exposure light, for example, in Japanese Patent Laid-Open Nos. 63-32303 and 2-130908.
[0005]
As an alignment method used in an exposure apparatus for manufacturing semiconductor elements, an optical image of an alignment mark on a wafer is formed on an image sensor such as a CCD camera by an observation system (alignment optical system), and the optical image is obtained. There is a method of detecting the position of the wafer by performing image processing on the electrical signal. The present applicant has proposed such an alignment mark detection method in, for example, Japanese Patent Application Laid-Open No. 8-115873.
[0006]
In this publication, high-precision alignment is possible for many semiconductor process wafers without being affected by variations in wafer flatness. In this publication, the detection of the image plane of the projection optical system, so-called focus detection, is performed using the wafer image of the alignment detection system (the focus detection system is also used as the alignment detection system). ) In other words, the detection system is different from the focus detection system for exposure.
[0007]
[Problems to be solved by the invention]
In general, the position information of the alignment mark provided on the wafer surface is observed by the observation means, the position information of the alignment mark is detected by the detection means, and the wafer is aligned with the reticle (or the reference point of the observation means) (alignment). ), If the shape of the wafer surface is locally changed, it is difficult to detect the position information of the alignment mark with high accuracy, and the alignment accuracy is lowered.
[0008]
Further, when using a TTL alignment method in which the wafer surface is aligned at a predetermined position, for example, via a projection optical system, if the wafer surface is not positioned on the best focus surface in the optical axis direction of the projection optical system, it is affected by defocus characteristics. There is a problem that the alignment accuracy is lowered.
[0009]
In particular, in semiconductor processes, offset generation and alignment accuracy are reduced. As a specific problem, even though the focus surface of the alignment mark is correctly aligned with the step surface of the alignment mark, the image contrast actually observed on the surface deviated from the step surface is the best, and this deviation has occurred. It may be necessary to perform alignment on the surface. When alignment detection is performed on a shifted surface, the detected focus is poor when the telesensitivity of the alignment detection system at that time (the degree of change in the measured value when defocused, hereinafter referred to as “defocus characteristics”) is poor. A deviation of measurement occurs by an amount obtained by multiplying the amount by a defocus characteristic coefficient. When this value is constant on the wafer surface, it becomes an offset such as a shift component, and when it changes on the wafer surface, alignment accuracy deterioration (3σ is reduced). It becomes a cause of).
[0010]
As another specific problem, the focus detection of the alignment mark varies from wafer to wafer, which causes an offset in the alignment. In such a process wafer, the evaluation amount (for example, contrast or pattern matching) for detecting the focus of the alignment mark has a double peak as shown in FIG. At this time, for example, it is assumed that offset confirmation is performed on the wafer at the peak position on the right side (+ focus direction) having a large peak value, and the subsequent wafers are aligned and exposed. Assuming that the focus detection of the alignment mark is performed for each wafer, the evaluation value for focus detection of the number of wafers becomes 2 when the peak value on the left side (−focus direction) increases as shown in FIG. An offset occurs in the position measurement, which is an amount obtained by multiplying the focus amount D of one peak by the defocus characteristic.
[0011]
Of course, by adjusting the defocus characteristic to zero, this problem will not occur.
(A) Detection system coma (b) Uniformity of illumination system requires very strict specifications,
(C) A complicated configuration (d) High costs arise.
[0012]
The present invention appropriately detects an alignment mark without being adversely affected by a local shape change or / and a defocus characteristic of a process wafer surface, and can align a reticle and a wafer with high accuracy. It is an object of the present invention to provide an apparatus and a device manufacturing method using the same.
[0013]
[Means for Solving the Problems]
The projection exposure apparatus of the invention of claim 1 is a projection exposure apparatus comprising a projection optical system that projects an image of a pattern of a first object onto a second object coated with a resist.
An alignment detection system that detects a position of an alignment mark formed on the second object in a direction perpendicular to the optical axis of the projection optical system;
The positional relationship between the focus position of the alignment detection system and the image plane position of the first object with respect to the projection optical system is known,
Obtained in the first focus detection system, position information F1 in the direction of the optical axis with respect to the focus origin of the first object of the resist surface which is disposed on the image plane position of with respect to the projection optical system,
Position information F2 in the direction of the optical axis with respect to the focus origin of the alignment mark arranged at the focus position of the alignment detection system , obtained by the alignment detection system ,
Distance information F3 to the resist surface that is input from the input means and based on the distance between the alignment mark,
Then, from the changing rate K of the said direction perpendicular to the direction of position information of the optical axis obtained by the alignment detection system when the alignment mark is moved in the direction of the optical axis,
The offset amount with respect to the detection result of the position of the alignment mark of the detected direction perpendicular to the direction of the optical axis by an alignment detection system (F2-F1-F3) × seeking K, the detection result by using the offset amount It is characterized by correcting.
[0014]
The invention according to claim 2 characterized in that in the invention of claim 1, wherein the rate of change becomes a different value when the moving in the direction away a direction closer to the alignment mark with respect to the projection optical system in the direction of the optical axis It is characterized by having.
The invention of claim 3 is the invention of claim 1 or 2, wherein the distance information F3 is the alignment mark from the recess of the distance in air up to the recess of the resist opposite to the alignment mark from the surface of the resist resist it is characterized in that the distance to which is the sum of the values divided by the refractive index of the resist.
The invention of claim 4 is the invention of claim 1, reflected from the first focus detection system on the surface of the light projecting system and the resist for projecting a light beam from an oblique direction to the surface of the resist It is characterized that you have a light-receiving system for receiving the light.
[0015]
Method of manufacturing a device of the invention of claim 5, after exposing the wafer with the pattern of the reticle by using the projection exposure apparatus according Izu Re one of claims 1 to 4, a device is developed the wafer It is characterized that you manufacture.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a schematic view of the essential portions of Embodiment 1 of the present invention. The figure shows a projection lens (projection optical system) using light that does not sensitize a resist coated on a wafer (second object) (hereinafter referred to as “non-exposure light”), for example, light having a wavelength of 633 nm from a He—Ne laser. ) (TTL method), a schematic view of a main part of a projection exposure apparatus using a method of detecting an alignment target (alignment mark) on a wafer is shown.
[0017]
In the figure, reference numeral 4 denotes an illumination system, which illuminates a reticle (first object) 3 on which a circuit pattern is formed with exposure light. The projection lens 2 projects the circuit pattern on the surface of the reticle 3 on the surface of the wafer 1 to 1/10 or 1/5. 1a is an alignment mark on the wafer 1 surface.
[0018]
Next, a method for detecting positional information of the alignment mark 1a and performing relative alignment (alignment) with the reticle 3 or the observation means will be described.
[0019]
Reference numeral 40 denotes an alignment microscope (microscope) as an alignment detection system. The alignment mark 1a on the wafer 1 surface is in the optical axis direction of the projection optical system 2 and in the plane perpendicular to the optical axis (in the x and y planes). Position information is detected. That is, it has a function as a second focus detection system for detecting the position of the alignment mark in the optical axis direction.
[0020]
The light beam emitted from the illumination optical system 11 including the light source is reflected by the beam splitter 7, and sequentially illuminates the alignment mark 1 a on the wafer 1 through the correction optical system 6, the mirror 5, and the reduction type projection lens 2. The signal light reflected by the alignment mark 1 a on the wafer 1 is incident on the beam splitter 7 through the projection lens 2, the mirror 5, and the correction optical system 6 again in order.
[0021]
The signal light incident on the beam splitter 7 passes through the beam splitter 7, passes through the mirror 8 and the relay optical system 9, enters the image pickup device, for example, the image pickup surface 10 a of the CCD camera 10, and an alignment mark on the wafer 1 is formed on the surface. The image of 1a is formed. An image signal based on the alignment mark image from the CCD camera 10 is input to a computer (calculation means) 51 through a line. The computer 51 measures the position information of the alignment mark image. At this time, the position of the alignment mark 1a is measured as a relative deviation from a reference mark (not shown) in the microscope 40.
[0022]
The wafer 1 is placed on the wafer chuck 21. The wafer chuck 21 is placed on a θ-Z stage (driving means) 22 and adsorbs the wafer 1 to the chuck surface so that the position of the wafer 1 does not shift due to various vibrations. The θ-Z stage 22 is placed on the tilt stage 23 and moves the wafer 1 up and down in the focus direction (the optical axis direction of the projection lens 2).
[0023]
The tilt stage 23 is placed on the XY stage 24 and corrects the warpage of the wafer 1 so as to be minimized with respect to the image plane of the projection lens 2. Further, the tilt stage 23 can be driven in the focus direction by itself. The driving amount of the XY stage 24 is monitored by a bar mirror 25 and a laser interferometer 26 placed on the tilt stage 23. The laser interferometer 26 transmits measurement values relating to the driving amount to the computer 51 through a line.
[0024]
The fiducial mark 27 is placed on the θ-Z stage 22, and the θ-Z stage 22 or the tilt stage 23 is driven to focus the pattern surface of the fiducial mark 27 on the wafer 1 side of the projection optical system 2. It is adjusted to match the surface. A measurement system for the position in the optical axis direction of the surface of the wafer 1 relative to the projection lens 2, that is, a focus measurement system (first focus detection system) for alignment focus with respect to the projection lens 2, includes a light projection system 31 that emits a light beam and a wafer 1. It is comprised from the detection system 32 which detects the positional information on reflected light. The light projecting system 31 and the detection system 32 are mounted as a whole by five. These five light projecting systems and detection systems (not shown) detect positions in the focus direction in five areas 110 to 114 in the shot, for example, as shown in FIG.
[0025]
Thus, in addition to the focus of the projection lens 2, the tilt of the shot surface with respect to the image plane of the projection lens 2 is detected, and the amount is corrected by the tilt stage 23 using the detection result. After the focus measurement on the surface of the wafer 1, the measurement value is transferred from the detection system 32 to the computer 51 through a line. The focus measurement point is a shot center region 110 (a point on the optical axis of the projection lens 2) shown in FIG.
[0026]
In this embodiment, global alignment is used as a method for aligning the reticle 3 and the wafer 1 in terms of accuracy and throughput. That is, several shot alignment marks in the wafer 1 are measured, the magnification and orthogonality of the shot arrangement grid are obtained, the XY stage 24 is driven based on the calculated arrangement grid, and the reticle pattern 3a is exposed on the wafer 1. Is used.
[0027]
FIG. 3 is an explanatory diagram of an array lattice of shots formed on the wafer 1. Shots 101, 102, 103, and 104 shown in black in the figure are examples of alignment measurement shots. In a general projection exposure apparatus, global alignment is performed as follows.
[0028]
After the pre-alignment, the wafer 1 fed under the projection lens 2 detects the best focus surface with respect to the alignment microscope 40 with several shots in the measurement shot before entering the alignment measurement for calculating the shot array lattice. Do. At this time, the best focus plane is obtained by measuring the contrast of the appearance of the alignment mark 1a in the alignment microscope 40 while focusing, and is obtained from the highest point, the center of gravity of the contrast curve, the slice, or the like. The Z position of the θ-Z stage 22 on the best focus surface is monitored by the focus measurement system (31, 32). The focus measurement system used at this time measures the area 110 of FIG. 2 in which the center of the shots in the five focus measurement systems is measured.
[0029]
Thereafter, the positions of the alignment marks arranged in the angular shots 101, 102, 103, 104 for alignment measurement are measured in the X and Y directions by the alignment microscope 40. Then, for example, (F1-F2-F3) × Ka, which will be described later, is used as an offset for the measurement value in each shot, and the alignment measurement value is used.
[0030]
After the end of the alignment measurement, the offset measurement values are transferred to the computer 51 through a line. There, the wafer magnification, orthogonality, etc. of the array lattice of shots on the wafer to be measured are calculated. When the electronic circuit pattern on the surface of the reticle 3 is transferred to the wafer 1, the wafer stage 21 or the reticle stage is driven in accordance with the calculated wafer magnification, orthogonality, and shift component, and sequential exposure is performed.
[0031]
Although the above-described alignment sequence has been described for global alignment, the present invention need not be limited thereto. For example, even in die-by-die alignment, the present invention can be achieved by aligning each shot with a value that is offset-corrected to the measured value. The effect of can be applied.
[0032]
Further, although the TTL off-axis alignment method has been described in the above description of the alignment method, the present invention is not limited to this, and for example, the same applies to the TTL on-axis alignment method and the NON-TTL off-axis alignment method. So that the effect can be applied.
[0033]
Next, a specific example of the alignment method in the present embodiment will be described. In the present embodiment, the relative alignment between the wafer 1 and the reticle 3 is performed by detecting the position of the wafer. At this time, as shown in FIG. 6, the defocus characteristic of the alignment detection system 40 and geometrical optical distance information F3 from the photoresist surface 42 to the position of the alignment mark 45 are inputted in advance. Here, the distance information F3 is the distance L1 in the air from the photoresist surface 42 to the recess 42a of the photoresist 47 facing the alignment mark 45, the distance L2 from the recess 42a of the photoresist 47 to the alignment mark 45, and the refraction of the photoresist. When the rate is N,
F3 = L1 + L2 / N
It is more demanded.
[0034]
At the time of wafer alignment, position information F1 in the direction of the optical axis with respect to the focus origin 46 on the photoresist surface is obtained by the first focus detection system (31, 32), and the direction of the optical axis with respect to the focus origin 46 of the alignment mark 45 is obtained. The position information F2 is measured by the second focus detection system 40, and the value (F2-F1-F3) × K obtained by multiplying the (F2-F1-F3) value by the defocus characteristic K is used as an alignment offset. .
[0035]
First, the defocus characteristic will be described. Here, the defocus characteristic is a change amount of the alignment measurement value obtained when the alignment detection system 40 changes the wafer 1 by a predetermined amount in the focus direction with respect to the alignment detection system. In order to quantify the defocus characteristic, two coefficients are used to simultaneously represent the residual coma aberration of the alignment detection system 40. Now, the change rate of measurement per micron in the plus direction in the focus direction is defined as Ka, and the change rate of measurement per micron in the minus direction is defined as Kb.
[0036]
FIG. 4 shows the focus in the vertical direction and the measurement value of the change amount in the horizontal direction. When the D + defocus in the + direction of the alignment detection system, the measured value changes by Δ1, and when the D- defocus in the minus direction, the measured value changes by Δ2. The change rates Ka and Kb at this time can be expressed by the following equations from the above definition.
[0037]
Ka = Δ1 / D +
Kb = Δ2 / D−
Here, it can be said that the telecentric alignment detection system is that the measurement value does not change even when defocusing is performed. At that time, the change rates Ka and Kb are zero. These two coefficients ( rates of change) Ka and Kb are configured in a computer that controls the driving of the apparatus, and are used during alignment. Since these coefficients can change according to the coordinates in the shot, specifically, the image height with respect to the projection lens, it is preferable to make a table. If the alignment detection system 40 has no coma, the coefficients Ka and Kb are equal.
[0038]
The defocus amounts D + and D− for measurement in order to calculate the coefficients Ka and Kb are preferably set to a first-order linear change region in which the change in the measurement value with respect to the defocus change can be accurately tolerated. It is necessary for accuracy. If it is detected outside the linear change region, it is preferable to measure at a plurality of three or more points instead of calculating the coefficients Ka and Kb at the above three points and convert them to a coefficient using a spline function or the like. .
[0039]
Next, the focus for exposure, the focus for alignment, and the geometric optical distance F3 from the photoresist surface to the alignment mark will be described with reference to FIGS.
[0040]
As shown in FIG. 5, in order to transfer the pattern on the reticle 3 to the wafer 1, it is necessary to match with the reticle image surface 41 on the wafer 1 side of the projection optical system 2. The focus distance F1 from the focus origin 46 of the projection optical system 2 to the reticle image plane 41 is a first focus detection system (31, 32) using a photoresist coated on a Si wafer having no pattern. Seeking in advance. That is, the focus of the wafer 1 is detected by the first focus detection systems 31 and 32 also during this measurement.
[0041]
FIG. 6 shows a cross-sectional view of the alignment mark 45 and the photoresist 47 provided for alignment on the wafer. In the case of the currently used photoresist 47, the best focus surface for exposure is when the photoresist surface 42 coincides with the reticle image surface 41 on the wafer 1 side of the projection optical system 2 in FIG. This focus value is defined as focus F1. For exposure, the focus position of the wafer upper surface (= the vicinity of the photoresist surface 42) is detected, and the wafer 1 is driven in the optical axis direction during exposure so that the distance from the focus origin 46 to the wafer upper surface becomes the focus F1.
[0042]
When performing alignment, the best focus surface 43 of the alignment mark 1a is used as a second focus detection system (for example, the alignment detection system 40, and the detection system using the image contrast value and the pattern matching ratio as an evaluation amount. ) To detect. If no photoresist is applied and the alignment mark has a small step difference as in the case of a Si-etched wafer, the distance F2 to the best focus surface of the alignment mark is equal to the focus F1. Adjust the focus. If there is an error in this driving (if it cannot be driven), the amount is measured, input to the computer, and used as an offset.
[0043]
Next, geometric optical distance information F3 between the focus position (mark step surface) of the alignment mark to be actually aligned and the photoresist surface is input for each process wafer and used for alignment. This geometric optical distance information F3 is a value obtained by dividing the distance L2 from the alignment mark 45 in the scribe to the photoresist surface 42a by the refractive index N at the alignment (center) wavelength of the photoresist as shown in FIG. And the distance L1 in the air from the photoresist surface 42 to the recess 42a of the photoresist 47 facing the alignment mark 45.
[0044]
Whether the alignment mark is positioned at the upper side or the lower side may be determined by using the one that is desired to be aligned (in the middle in FIG. 6). For example, when F2-F1 is positive, the alignment measurement result is
(F2-F3-F1) × Ka
By correcting the amount as an offset and aligning, it is possible to perform highly accurate alignment.
[0045]
It is assumed that the focus of the alignment detection system and the focus of exposure are adjusted in advance or the difference between them is known, but as a wafer to be used for obtaining this, about λ / 8 of Si wafer (use of alignment If a wafer with a low step (having a wavelength of λ) is used, an offset greater than the step does not occur. On the other hand, the exposure focus is measured with a wafer coated with a thin photoresist of about 0.2 μm, so that even if the actual focus surface is the surface of the photoresist, the value can be ignored within the error range.
[0046]
In the present embodiment, as described above, after the alignment is completed, the computer 51 calculates the wafer magnification, the orthogonality, and the like of the array lattice of shots on the wafer to be measured based on the measurement values subjected to the offset processing. When the electronic circuit pattern on the surface of the reticle 3 is transferred to the wafer 1, the wafer stage 21 or the reticle stage is driven in consideration of the calculated wafer magnification, orthogonality, and shift component to perform sequential exposure.
[0047]
Next, an embodiment of a semiconductor device manufacturing method using the above-described projection exposure apparatus will be described.
[0048]
FIG. 7 shows a flow of manufacturing a semiconductor device (a semiconductor chip such as an IC or LSI, or a liquid crystal panel or a CCD).
[0049]
In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.
[0050]
The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).
[0051]
FIG. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface.
[0052]
In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed on the wafer by exposure using the exposure apparatus described above.
[0053]
In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0054]
By using the manufacturing method of the present embodiment, a highly integrated semiconductor device that has been difficult to manufacture can be easily manufactured.
[0055]
【The invention's effect】
According to the present invention, by setting each element as described above, an alignment mark is appropriately detected without being adversely affected by local shape change or / and defocusing characteristics of the process wafer surface, Can be achieved, and a device manufacturing method using the same can be achieved.
[0056]
In particular, according to the present invention, the alignment detection system configuration can be realized without the coma aberration of the alignment detection system or the complicated configuration and high cost to improve the uniformity of the illumination system. Wafer alignment can be performed with high accuracy without generating an offset that is generated by the amount of defocus characteristics multiplied by the amount measured by deviating from the height of the alignment mark.
[Brief description of the drawings]
FIG. 1 is a schematic diagram of the main part of Embodiment 1 of the present invention. FIG. 2 is an explanatory diagram of a part of FIG. 1. FIG. 3 is an explanatory diagram of a part of FIG. [Explanation of exposure focus surface and alignment focus surface] [Fig. 6] Explanatory diagram of distance between photoresist and alignment mark [Fig. 7] Flow chart of device manufacturing method of the present invention [Fig. 8] Flow chart of device manufacturing method of the present invention FIG. 9 is an explanatory diagram when the alignment focus evaluation value is a double peak. FIG. 10 is an explanatory diagram when the alignment focus evaluation value is a double peak.
DESCRIPTION OF SYMBOLS 1 Wafer 2 Reduction projection optical system 3 Reticle 4 Illumination optical system 5, 8 Mirror 6 Correction optical system 7 Beam splitter 9 Relay lens 10 CCD camera 11 Light source and illumination optical system 21 Wafer chuck 22 θ-Z stage 23 Tilt stage 24 XY Stage 25 Bar mirror 26 Laser interferometer 31 Focus measurement system (projection system)
32 Focus measurement system (detection system)
40 Positioning microscope (alignment detection system)
41 Exposure focus surface 42 Photoresist surface 43 Alignment focus surface 51 on real device wafer 51 Computer

Claims (5)

In a projection exposure apparatus comprising a projection optical system that projects a pattern image of a first object onto a second object coated with a resist,
An alignment detection system that detects a position of an alignment mark formed on the second object in a direction perpendicular to the optical axis of the projection optical system;
The positional relationship between the focus position of the alignment detection system and the image plane position of the first object with respect to the projection optical system is known,
Obtained in the first focus detection system, position information F1 in the direction of the optical axis with respect to the focus origin of the first object of the resist surface which is disposed on the image plane position of with respect to the projection optical system,
Position information F2 in the direction of the optical axis with respect to the focus origin of the alignment mark arranged at the focus position of the alignment detection system , obtained by the alignment detection system ,
Distance information F3 to the resist surface that is input from the input means and based on the distance between the alignment mark,
Then, from the changing rate K of the said direction perpendicular to the direction of position information of the optical axis obtained by the alignment detection system when the alignment mark is moved in the direction of the optical axis,
The offset amount with respect to the detection result of the position of the alignment mark of the detected direction perpendicular to the direction of the optical axis by an alignment detection system (F2-F1-F3) × seeking K, the detection result by using the offset amount A projection exposure apparatus characterized by correcting the above. The rate of change projection exposure according to claim 1, characterized in that has a different value in when moving in a direction away and approaching direction with respect to the projection optical system the alignment marks in the direction of the optical axis apparatus. The distance information F3 is the value obtained by dividing the refractive index of the distance of the resist from the recess of the distance between the resist in the air until the recesses of the resist opposite to the alignment mark from the surface of the resist to the alignment mark 3. The projection exposure apparatus according to claim 1, wherein the projection exposure apparatus is a sum. The first focus detection system according to claim 1, characterized that you have a light-receiving system for receiving reflected light from the surface of the light projecting system and the resist for projecting a light beam from an oblique direction to the surface of the resist the projection exposure apparatus according to any one claim of 3. After exposing the wafer with the pattern of the reticle by using the projection exposure apparatus according to claim 1 to 4 Izu Re or one claim, device manufacturing method, characterized that you manufacture devices by developing the wafer .