JP3651923B2 - Polishing apparatus and method - Google Patents

Polishing apparatus and method Download PDF

Info

Publication number
JP3651923B2
JP3651923B2 JP7146094A JP7146094A JP3651923B2 JP 3651923 B2 JP3651923 B2 JP 3651923B2 JP 7146094 A JP7146094 A JP 7146094A JP 7146094 A JP7146094 A JP 7146094A JP 3651923 B2 JP3651923 B2 JP 3651923B2
Authority
JP
Japan
Prior art keywords
pad
workpiece
radius
work piece
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7146094A
Other languages
Japanese (ja)
Other versions
JPH07251370A (en
Inventor
守仁 神沢
憲雄 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP7146094A priority Critical patent/JP3651923B2/en
Publication of JPH07251370A publication Critical patent/JPH07251370A/en
Application granted granted Critical
Publication of JP3651923B2 publication Critical patent/JP3651923B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

【0001】
【産業上の利用分野】
本発明はポリッシング装置及び方法に係り、特に半導体ウエハ等のポリッシング対象物を平坦かつ鏡面状に研磨するポリッシング装置及び方法に関する。
【0002】
【従来の技術】
近年、半導体デバイスの高集積化が進むにつれて回路の配線が微細化し、配線間距離もより狭くなりつつある。特に0.5μm以下の光リソグラフィの場合、焦点深度が浅くなるためステッパーの結像面の平坦度を必要とする。
そこで、半導体ウエハの表面を平坦化することが必要となるが、この平坦化法の1手段としてポリッシング装置により研磨することが行われている。
【0003】
従来、この種のポリッシング装置では、図1(a)に示すように、回転テーブル1上に接着または治具によって固定したパッド2を回転させながら、被加工物3を収めたトップリング4を回転させながらパッド2に押し当て、被加工物3とパッド2との相対すべりと、パッド面に散布または含浸した研磨剤及びまたは研磨液の作用により被加工物を研磨加工する。その際、パッドの特定半径位置に摩耗や目づまりが集中しないように、トップリング4を支えるアーム5を揺動する(本図は往復円弧運動をするように揺動する場合)こともある。
【0004】
ポリッシング対象物の平坦度を向上させるためには、加工中の押し当て圧力を均一にし、パッド材と被加工物とのすべり速度を被加工面全域で均一にすることが重要で、前者の手段としてトップリングに球面座を介して押し当て力を付加する装置(例えば、特開平2−278822号、特開平4−19065号)、真空吸引によって被加工物をトップリングに固定する装置(例えば、特願平5−256522号)等が考案されている。パッド材と被加工物とのすべり速度を被加工面全域で均一にするための手段としては、パッドの回転と被加工物の回転を同一方向でほぼ同一回転数にし、揺動させる場合には、揺動速度を被加工物の回転速度より十分小さくすべきことがよく知られている。
【0005】
【発明が解決しようとする課題】
研磨加工量(加工により除去する厚さ)は、ほぼ被加工物とパッドとの相対速度と、加工時間の積、つまり被加工物の相対すべり距離S(一般にパッドと被加工物の回転数をほぼ同一にするので、相対すべり距離も被加工面内は均一)に比例するが、被加工物における単位すべり距離(例えば、1000mまたは1個の被加工物を研磨する時間中のパッドのすべり距離)当たりのパッドの各半径位置における相対すべり距離Lは、図1(b)のように不均一となる。これは、パッドの中心Oからの半径位置rにおける被加工物の円弧長が半径位置rによって異なるためである。つまり、パッドの半径rp のうち、内周側O−Oi (r≦ri )の部分及び外周側Oo−B(r≧rp −ro )の部分は被加工物と接することがなく、Oi−Oo (Δr=ro −ri )の間に相対すべり距離Lが最大Lmax となる部分(r=rm )が生ずる。
【0006】
パッドの摩耗、目づまり等の劣化はほぼパッドの相対すべり距離に比例するので、パッドの半径r=rm の付近でパッドの加工能力が低下または増加し、被加工物は凸または凹または凸を2個組み合わせた形の仕上りになり易い。これを防ぐために、パッドのドレッシングが必要になるが、少なくともパッドのOi−Oo(Δr=ro−ri )の範囲を均一な性状にするために、劣化の進行していないr=ro 及びri 付近もドレッシングすることになり、パッドの寿命を短縮することになる。
【0007】
一方、パッドの半径を著しく大きくし、被加工物の中心位置Oc またはOw を十分大きくするか、揺動振幅を十分大きくすれば、パッドの相対すべり距離は小さくなり、かつパッドの半径位置による差も小さくなる。しかし、著しく大きなパッドを必要とし、ポリッシング装置全体も極端に大きなものとなってしまう。
【0008】
従って、極度に大きな装置でなくても、被加工物の平坦度が優れた研磨加工ができ、かつパッドの寿命を伸ばすためには、パッドの大きさを極端に大きくすることなく、パッドの相対すべり距離を小さく、かつパッドの半径位置によるその差を小さくすることが望まれる。
【0009】
本発明は上述の事情に鑑みなされているもので、パッドの相対すべり距離を小さくかつパッドの半径位置によるその差を小さくすることができるポリッシング装置及び方法を提供することを目的とする。
【0010】
【課題を解決するための手段】
本発明は、研磨剤及びまたは研磨液を散布または含浸した円形パッドを回転させ、該パッドの中心から所定距離偏心した位置を中心として被加工物を回転させながら該パッドに押しつけて被加工物を研磨加工するポリッシング装置及び方法において、加工中に被加工物を往復円弧運動をするように揺動し、該揺動半径r s と被加工物の半径r w の比R s =r s /r w 、揺動角振幅φ(度)、被加工物の揺動角振幅内の中央における前記パッドの中心からの被加工物の偏心距離r c と被加工物の半径r w の比Rc=r c /r w が、R c −R s −φ直交3次元座標系に表示したとき、被加工物の相対すべり距離をS、前記パッド側の相対すべり距離の最大値をL max 、前記パッドの必要最小径r o と被加工物の半径r w の比R o =r o /r w として(L max /S)×R o の最小値の10%増とする包絡線で囲まれ、さらに0.5r w +r o −r c 以上、r o 以下となるようにr s に制限を加えた空間であって、下記15点:
(1.10,1.50,0)(1.60,1.50,0)
(2.60,1.50,0)(1.10,2.10,0)
(1.60,2.60,0)(2.60,3.60,0)
(1.10,1.56,20)(1.60,1.54,20)
(2.45,1.53,20)(1.15,2.16,20)
(1.60,2.71,34)(2.35,3.44,20)
(1.20,1.69,40)(1.60,1.80,52)
(2.25,1.66,40)
を通る曲面で囲まれた空間の内部となるようにしたことを特徴とする。
【0012】
【作用】
前述のように、被加工物の相対すべり距離S当りの、パッド側の相対すべり距離Lの最大値Lmax /S(パッドの劣化はパッドの相対すべり距離が最大となる半径rw の位置で最も激しくなる)を小さくしようとすると、パッドの大きさを大きくする必要があり、パッドの寿命を伸ばしかつ平坦度の優れた研磨加工をしたいという要求と、パッドを小さいもので済ませたいという要求は相反する。故に、最適なパッド径、被加工物の偏心量、揺動角振幅、揺動半径の組み合わせを選択することが望まれる。
【0013】
本発明のポリッシング装置は既に説明した図1(a)と同様の構成であるため、以下の説明においては、図1(a)を参照して説明する。
パッドを劣化させる度合と対応するLmax /Sとパッド面積に相当するro2との積を最小とするように、パッドの必要最小径ro 、被加工物の偏心量rc 、揺動角振幅φ、揺動半径rs を選定することがその手段の一つとなる。
【0014】
単位時間当りの揺動回数を被加工物の回転数(パッドの回転数に等しい)の1/5とし、被加工物の半径rw で無次元化した偏心量Rc (=rc /rw )、揺動半径Rs (=rs /rw )、パッドの必要最小径Ro (=ro /rw )及び揺動角振幅φ、Lmax /Sとの関係を求めると図2に示すようになる。ここで、揺動は1サイクル中の1/3を定速、1/6を定加減速とした。
【0015】
(Lmax /S)×Ro2は、揺動しない場合(φ=O)、Rc を変数とした平面曲線となり(図2の太実線)、揺動する場合Rc 、Rs 、φを変数とした曲面となり(φ=30°のとき図2の点線、φ=60°のとき図2の一点鎖線)、いずれも最小値が存在する。この(Lmax /S)×Ro2が最小となるRc 及び/またはRs 、φが、パッドを劣化させる度合いと対応するLmax /Sと、パッド面積の両方を低く押さえる最適条件となる。また、被加工物の取付け、取りはずしの便、市場性の高い構成材料を使うためにRc 、Rs 、φの選定に若干の自由度を持たせ、(Lmax /S)×Ro2を(Lmax /S)×Ro2の最小値の10%増まで許容することとし、Rc 、Rs 、φの範囲を求めると、図3の包絡線(一点鎖線で示す)Y1 ,Y2 ,Y3 ,Y4 ,Y5 で囲まれた空間の内部になる。
【0016】
ところで、Rc 、Rs 、φの選定においては、被加工物を支えるまたは揺動のためのアーム5の軸(図示していない)及び被加工物を保持するトップリング4の外周縁厚さも考慮に入れる必要があるので、パッドの必要半径ro とアーム軸回転中心との間隔を0.5rw 以上として、rs の下限を制限する。また、アームの長さをいたずらに大きくするとポリッシャ装置が大きくなり、本発明の目的を損うので、rs の上限をパッドの必要半径(ro )以下と制限する。
【0017】
前記の、包絡線(一点鎖線)で示したRc 、Rs 、φの範囲に、上記rs の制限を加えた結果が図3の太線で示した空間の内部となる。図3において、太線で示した空間境界面上の点ア〜ソの座標は、Rs −Rs −φ座標系で、下記となる。
ア:(1.10,1.50,0)、イ:(1.60,1.50,0)、
ウ:(2.60,1.50,0)、エ:(1.10,2.10,0)、
オ:(1.60,2.60,0)、カ:(2.60,3.60,0)、
キ:(1.10,1.56,20)、ク:(1.60,1.54,20)、
ケ:(2.45,1.53,20)、コ:(1.15,2.16,20)、
サ:(1.60,2.71,34)、シ:(2.35,3.44,20)、
ス:(1.20,1.69,40)、セ:(1.60,1.80,52)、
ソ:(2.25,1.66,40)
【0018】
Rc , Rs , φを、ア〜ソの座標で囲まれた空間内になるように選定すれば、パッドを劣化させる度合と対応するところのパッドの相対すべり距離と、パッド面積の積を小さくできるので、パッドの大きさとパッドの劣化を同時に小さくできるポリッシング装置が実現する。
【0019】
具体的には、揺動させない場合には、Rc を図3の直線ア〜ウの範囲、つまり1.1≦Rc ≦2.6にし、揺動する場合には、Rc , Rs , φを図3の空間ア〜ソの内部になるように選定する。
【0020】
【実施例】
被加工物として、直径200mm(r w =100 mm の二酸化ケイ素(SiO)を被覆したシリコンウエハの鏡面研磨加工を想定し、図1(a)において、rc =150mm, rs =270mm, φ=22度としてポリッシング装置を試作した。これらrc /rw =Rc 、rs /rw =Rs 、φの組み合わせは、図3の空間ア〜ソの内部になるように選定した。回転テーブル1上のパッド2に硬度73のポリウレタン含浸ポリエステル不織布を用い、砥液に酸化セレンの微粒を0.5%含む水濁液を用い、トップリング4の回転数とパッド2の回転数をともに100rpm 、アーム5の揺動周期を5秒、ウエハのパッド2への押し当圧力を300g/cm としてSiO 層の鏡面研磨加工を行った。
【0021】
その結果、加工(SiO2 層厚さ方向の除去)速度が3500〜4000オングストローム/分、加工終了後の残存SiO2 厚さのバラツキが、ウエハ面内18点の平均で10〜15%となり優れた平坦性と加工性を得た。
【0022】
なお、加工中はパッド面のウエハ接触部後方を清水噴射によって、パッド面の洗浄及びパッドを形成する繊維の整形を行ったが、3分のタクトタイムで1200分余りの供用後も、被加工物の平坦度、加工速度ともに有意な差は起きず、目視上も及び電子顕微鏡観察上もパッドの特定半径位置の劣化が特に進行した徴候は認められなかった。
【0023】
【発明の効果】
以上説明したように、本発明によれば、被加工物の相対すべり距離S当りの、パッド側の相対すべり距離の最大値Lmax 、すなわち、パッドを劣化させる度合い(パッド内の特定半径位置の劣化が進むと、被加工物の平坦度が損なわれる)と対応するパラメータLmax /Sと、パッド面積に対応するところの必要パッド半径ro と被加工物の半径rw の比Ro (=ro /rw )の2乗(Ro2)との積をその最小値の1.1倍以内とするように、被加工物の回転中心のパッド上の偏心距離rc 、及び/または揺動半径rs 、揺動角振幅φを設定したので、適度のパッドの大きさでパッドの相対すべり距離を小さく、かつパッドの半径位置によるその差を小さくできる。したがって、被加工物の平坦度が長時間安定しかつ優れた研磨加工が実現できる。また、パッドの寿命も長く保てる。
【図面の簡単な説明】
【図1】図1(a)は本発明及び従来例に係るポリッシング装置の基本構成を示す平面図、図1(b)は半径位置におけるパッドの相対すべり距離Lを表すグラフである。
【図2】本発明に係るポリッシング装置のディメンジョン及び揺動方法と(Lmas /S)×Ro2の関係を示す図である。
【図3】本発明に係るポリッシング装置のディメンジョンの適正範囲を示す図である。
【符号の説明】
1 回転テーブル
2 パッド
3 被加工物
4 トップリング
5 アーム
φ 揺動角振幅
rc φ=oのときの被加工物の偏心距離
rw 被加工物の半径
rs 揺動半径
ro パッドの必要最小半径
Lmax パッドの相対すべり距離の最大値
S 被加工物の相対すべり距離
Rc =rc /rw
Rs =rs /rw
Ro =ro /rw
[0001]
[Industrial application fields]
The present invention relates to a polishing apparatus and method , and more particularly to a polishing apparatus and method for polishing a polishing object such as a semiconductor wafer in a flat and mirror-like shape.
[0002]
[Prior art]
In recent years, as semiconductor devices are highly integrated, circuit wiring is becoming finer and the distance between wirings is becoming narrower. In particular, in the case of optical lithography of 0.5 μm or less, the depth of focus becomes shallow, so that the flatness of the imaging surface of the stepper is required.
Therefore, it is necessary to flatten the surface of the semiconductor wafer, but polishing is performed by a polishing apparatus as one means of this flattening method.
[0003]
Conventionally, in this type of polishing apparatus, as shown in FIG. 1A, a top ring 4 containing a workpiece 3 is rotated while a pad 2 fixed on a rotary table 1 by adhesion or a jig is rotated. While pressing, the workpiece is polished by the relative sliding between the workpiece 3 and the pad 2 and the action of the abrasive and / or polishing liquid sprayed or impregnated on the pad surface. At that time, the arm 5 supporting the top ring 4 may be swung so that wear and clogging are not concentrated on a specific radial position of the pad (in this figure, the arm 5 is swung so as to perform a reciprocating arc motion).
[0004]
In order to improve the flatness of the object to be polished, it is important to make the pressing pressure uniform during machining and to make the sliding speed between the pad material and the work piece uniform over the whole work surface. As a device for applying a pressing force to the top ring via a spherical seat (for example, Japanese Patent Laid-Open No. 2-278822, Japanese Patent Laid-Open No. 4-19065), a device for fixing a workpiece to the top ring by vacuum suction (for example, Japanese Patent Application No. 5-256522) has been devised. As a means to make the sliding speed between the pad material and the work piece uniform over the whole work surface, when rotating the pad and the work piece at the same rotational speed in the same direction and swinging, It is well known that the rocking speed should be sufficiently lower than the rotational speed of the workpiece.
[0005]
[Problems to be solved by the invention]
The amount of polishing processing (thickness to be removed by processing) is approximately the product of the relative speed between the workpiece and the pad and the processing time, that is, the relative slip distance S of the workpiece (generally the number of rotations of the pad and the workpiece). Since the relative slip distance is substantially the same, the relative slip distance is also proportional to the work surface, but the unit slip distance (for example, 1000 m or the pad slip distance during polishing of one work piece) ) The relative slip distance L at each radial position of the pad is non-uniform as shown in FIG. This is because the arc length of the workpiece at the radial position r from the center O of the pad differs depending on the radial position r. That is, of the pad radius rp, the inner peripheral O-Oi (r≤ri) part and the outer peripheral Oo-B (r≥rp -ro) part do not contact the workpiece, and Oi-Oo. A portion (r = rm) where the relative slip distance L becomes the maximum Lmax occurs during (.DELTA.r = ro-ri).
[0006]
Deterioration of pad wear, clogging, etc. is almost proportional to the relative sliding distance of the pad, so that the processing capability of the pad decreases or increases near the pad radius r = rm, and the workpiece is convex, concave or convex. It is easy to finish in the form of a combination of two. In order to prevent this, pad dressing is required, but at least r = ro where deterioration has not progressed in order to make the pad Oi−Oo (Δr = ro−ri) uniform. And ri The vicinity is also dressed, and the life of the pad is shortened.
[0007]
On the other hand, if the pad radius is remarkably increased and the center position Oc or Ow of the workpiece is sufficiently increased or the oscillation amplitude is sufficiently increased, the relative sliding distance of the pad is reduced and the difference depending on the radial position of the pad is also achieved. Becomes smaller. However, a remarkably large pad is required, and the entire polishing apparatus becomes extremely large.
[0008]
Therefore, even if it is not an extremely large apparatus, in order to perform polishing with excellent flatness of the workpiece and to extend the life of the pad, the relative size of the pad is not increased without extremely increasing the size of the pad. It is desirable to reduce the sliding distance and the difference due to the radial position of the pad.
[0009]
The present invention has been made in view of the above circumstances, and an object thereof is to provide a polishing apparatus and method capable of reducing the relative sliding distance of the pad and reducing the difference due to the radial position of the pad.
[0010]
[Means for Solving the Problems]
The present invention rotates a circular pad sprayed or impregnated with an abrasive and / or polishing liquid, and presses the work piece against the pad while rotating the work piece around a position deviated by a predetermined distance from the center of the pad. In the polishing apparatus and method for polishing a workpiece, the workpiece is oscillated so as to make a reciprocating arc motion during processing, and the ratio of the oscillation radius r s to the radius r w of the workpiece R s = r s / r w, swing angle amplitude phi (degrees), the ratio of the radius r w of eccentricity r c and the workpiece of the workpiece from the center of the pad at the center of the swing angle amplitude of workpiece Rc = When r c / r w is displayed in the R c -R s -φ orthogonal three-dimensional coordinate system, the relative slip distance of the workpiece is S, the maximum relative slip distance on the pad side is L max , and the pad The ratio R o = r o / r w between the required minimum diameter r o and the work piece radius r w (L max / S) × surrounded by the envelope to 10% increase of the minimum value of R o 2, the space further 0.5r w + r o -r c above, was added restrictions on r s to be equal to or less than r o And the following 15 points:
(1.10, 1.50, 0) (1.60, 1.50, 0)
(2.60, 1.50, 0) (1.10, 2.10, 0)
(1.60, 2.60, 0) (2.60, 3.60, 0)
(1.10, 1.56, 20) (1.60, 1.54, 20)
(2.45, 1.53, 20) (1.15, 2.16, 20)
(1.60, 2.71, 34) (2.35, 3.44, 20)
(1.20, 1.69, 40) (1.60, 1.80, 52)
(2.25, 1.66, 40)
It is characterized by being inside a space surrounded by a curved surface passing through .
[0012]
[Action]
As described above, the maximum value Lmax / S of the relative slip distance L on the pad side per relative slip distance S of the work piece (the deterioration of the pad is most severe at the position of the radius rw at which the relative slip distance of the pad is maximum). The size of the pad needs to be increased, there is a conflict between the desire to increase the life of the pad and to perform polishing with excellent flatness, and the requirement to reduce the pad size. . Therefore, it is desirable to select a combination of the optimum pad diameter, workpiece eccentricity, swing angle amplitude, and swing radius.
[0013]
Since the polishing apparatus according to the present invention has the same configuration as that of FIG. 1A already described, the following description will be given with reference to FIG.
In order to minimize the product of Lmax / S corresponding to the degree of deterioration of the pad and ro 2 corresponding to the pad area, the required minimum diameter ro of the pad, the eccentric amount rc of the workpiece, the swing angle amplitude φ, One of the means is to select the swing radius rs.
[0014]
The number of swings per unit time is set to 1/5 of the number of rotations of the workpiece (equal to the number of rotations of the pad), and the eccentricity Rc (= rc / rw) made dimensionless by the radius rw of the workpiece. FIG. 2 shows the relationship between the dynamic radius Rs (= rs / rw), the required minimum pad diameter Ro (= ro / rw), the swing angle amplitude φ, and Lmax / S. Here, 1/3 of one cycle was a constant speed and 1/6 was a constant acceleration / deceleration.
[0015]
(Lmax / S) × Ro 2 is a plane curve with Rc as a variable when not rocking (φ = O) (thick solid line in FIG. 2), and a curved surface with Rc, Rs and φ as variables when rocking. (The dotted line in FIG. 2 when φ = 30 °, and the alternate long and short dash line in FIG. 2 when φ = 60 °), both of which have a minimum value. The (Lmax / S) × Ro 2 becomes minimum Rc and / or Rs, phi is a Lmax / S corresponding to the degree of deterioration of the pad, the optimum condition for pressing both of the pad area low. The mounting of the workpiece, flights removed, Rc to use the high construction material marketable, Rs, to have a slight degree of freedom in the selection of phi, the (Lmax / S) × Ro 2 (Lmax / and allowing up to 10% increase of the minimum value of S) × Ro 2, Rc, Rs, when determining the range of phi, indicated by a chain line envelope (one point in FIG. 3) Y 1, Y 2, Y 3, Y 4, the interior of the space surrounded by Y 5.
[0016]
By the way, in selecting Rc, Rs and φ, the axis of the arm 5 (not shown) for supporting or swinging the workpiece and the outer peripheral thickness of the top ring 4 holding the workpiece are also taken into consideration. Since the distance between the required radius ro of the pad and the arm shaft rotation center is 0.5 rw or more, the lower limit of rs is limited. Further, if the length of the arm is increased unnecessarily, the polisher device becomes larger and the object of the present invention is impaired. Therefore, the upper limit of rs is limited to the required radius (ro) of the pad or less.
[0017]
The result of adding the above-mentioned restriction of rs to the range of Rc, Rs, and φ indicated by the envelope (the chain line) is the inside of the space indicated by the thick line in FIG. In FIG. 3, the coordinates of points A to S on the spatial boundary surface indicated by the bold lines are as follows in the Rs-Rs-φ coordinate system.
A: (1.10, 1.50, 0), A: (1.60, 1.50, 0),
C: (2.60, 1.50, 0), D: (1.10, 2.10, 0),
E: (1.60, 2.60, 0), F: (2.60, 3.60, 0),
G: (1.10, 1.56, 20), K: (1.60, 1.54, 20),
K: (2.45, 1.53, 20), K: (1.15, 2.16, 20),
S: (1.60, 2.71, 34), S: (2.35, 3.44, 20),
S: (1.20, 1.69, 40), C: (1.60, 1.80, 52),
Seo: (2.25, 1.66, 40)
[0018]
If Rc, Rs, and φ are selected so as to be within the space surrounded by the coordinates of A to S, the product of the pad's relative sliding distance and the pad area corresponding to the degree of deterioration of the pad can be reduced. Therefore, a polishing apparatus that can simultaneously reduce the size of the pad and the deterioration of the pad is realized.
[0019]
Specifically, when the rocking is not performed, Rc is set within the range of straight lines a to c in FIG. 3, that is, 1.1 ≦ Rc ≦ 2.6, and when rocking, Rc, Rs, φ are shown in FIG. Select so that it is inside space 3 of the space.
[0020]
【Example】
Assuming a mirror polishing of a silicon wafer coated with silicon dioxide (SiO 2 ) having a diameter of 200 mm (r w = 100 mm ) as a workpiece, in FIG. 1 (a), rc = 150 mm, rs = 270 mm, A polishing apparatus was prototyped with φ = 22 degrees. The combination of rc / rw = Rc, rs / rw = Rs, and φ was selected so as to be in the space as shown in FIG. The pad 2 on the turntable 1 is made of a polyurethane-impregnated polyester nonwoven fabric having a hardness of 73, and an abrasive liquid containing 0.5% selenium oxide fine particles is used as the abrasive liquid. In both cases, the mirror polishing process of the SiO 2 layer was performed with 100 rpm, the swing period of the arm 5 being 5 seconds, and the pressing pressure of the wafer against the pad 2 being 300 g / cm 2 .
[0021]
As a result, the processing (removal in the thickness direction of the SiO 2 layer) speed is 3500 to 4000 angstroms / minute, and the variation in the remaining SiO 2 thickness after processing is 10 to 15% on average at 18 points in the wafer surface. Flatness and workability were obtained.
[0022]
During the processing, the back of the wafer contact portion of the pad surface was cleaned with clean water jet to clean the pad surface and shape the fibers forming the pad, but after being used for more than 1200 minutes with a takt time of 3 minutes, There was no significant difference between the flatness of the object and the processing speed, and no sign of deterioration of the specific radial position of the pad was observed, either visually or with an electron microscope.
[0023]
【The invention's effect】
As described above, according to the present invention, the maximum value Lmax of the relative slip distance on the pad side per the relative slip distance S of the workpiece, that is, the degree of deterioration of the pad (deterioration of a specific radial position in the pad). As the process progresses, the flatness of the workpiece is impaired, and the ratio L0 (= ro / rw) of the parameter Lmax / S corresponding to the required pad radius ro corresponding to the pad area and the radius rw of the workpiece. The eccentric distance rc on the pad at the center of rotation of the workpiece and / or the rocking radius rs and the rocking angle so that the product of the squared value (Ro 2 ) is within 1.1 times its minimum value Since the amplitude φ is set, the relative sliding distance of the pad can be reduced with an appropriate pad size, and the difference depending on the radial position of the pad can be reduced. Therefore, the flatness of the workpiece can be stabilized for a long time and excellent polishing can be realized. In addition, the life of the pad can be kept long.
[Brief description of the drawings]
FIG. 1 (a) is a plan view showing a basic configuration of a polishing apparatus according to the present invention and a conventional example, and FIG. 1 (b) is a graph showing a relative sliding distance L of a pad at a radial position.
FIG. 2 is a diagram showing a relationship of (Lmas / S) × Ro 2 with dimensions and swinging methods of the polishing apparatus according to the present invention.
FIG. 3 is a view showing an appropriate dimension range of the polishing apparatus according to the present invention.
[Explanation of symbols]
1 Rotary table 2 Pad 3 Work piece 4 Top ring 5 Arm φ Oscillation angle amplitude rc Eccentric distance rw of work piece when φ = o Workpiece radius rs Oscillation radius ro Minimum required pad radius Lmax Pad Relative slip distance S of the workpiece R relative slip distance Rc = rc / rw
Rs = rs / rw
Ro = ro / rw

Claims (2)

研磨剤及び/または研磨液を散布または含浸した円形パッドを回転させ、該パッドの中心から所定距離偏心した位置を中心として被加工物を回転させながら該パッドに押しつけて被加工物を研磨加工するポリッシング装置において、加工中に被加工物を往復円弧運動をするように揺動し、該揺動半径rsと被加工物の半径rwの比Rs=rs/rw、揺動角振幅φ(度)、被加工物の揺動角振幅内の中央における前記パッドの中心からの被加工物の偏心距離rcと被加工物の半径rwの比Rc=rc/rwが、Rc−Rs−φ直交3次元座標系に表示したとき、被加工物の相対すべり距離をS、前記パッド側の相対すべり距離の最大値をLmax、前記パッドの必要最小径roと被加工物の半径rwの比Ro=ro/rwとして(Lmax/S)×Roの最小値の10%増とする包絡線で囲まれ、さらに0.5rw+ro−rc以上、ro以下となるようにrsに制限を加えた空間であって、下記15点:
(1.10,1.50,0)(1.60,1.50,0)
(2.60,1.50,0)(1.10,2.10,0)
(1.60,2.60,0)(2.60,3.60,0)
(1.10,1.56,20)(1.60,1.54,20)
(2.45,1.53,20)(1.15,2.16,20)
(1.60,2.71,34)(2.35,3.44,20)
(1.20,1.69,40)(1.60,1.80,52)
(2.25,1.66,40)
を通る曲面で囲まれた空間の内部となるようにしたことを特徴とするポリッシング装置。
A circular pad sprayed or impregnated with an abrasive and / or polishing liquid is rotated, and the workpiece is polished by pressing against the pad while rotating the workpiece about a position decentered by a predetermined distance from the center of the pad. In the polishing apparatus, the workpiece is swung in a reciprocating arc motion during machining, the ratio Rs = rs / rw of the rocking radius rs to the workpiece radius rw, and the swing angle amplitude φ (degrees). The ratio Rc = rc / rw of the work piece eccentric distance rc and the work piece radius rw from the center of the pad at the center within the swing angle amplitude of the work piece is Rc-Rs-φ orthogonal three-dimensional. When displayed in the coordinate system, the relative sliding distance of the workpiece is S, the maximum value of the relative sliding distance on the pad side is Lmax, and the ratio of the required minimum diameter ro of the pad to the radius rw of the workpiece Ro = ro / as rw and (Lmax / S) 10% increase of the minimum value of × Ro 2 That is surrounded by the envelope, further 0.5rw + ro-rc above, a space obtained by adding a restriction to rs such that ro less, the following 15 points:
(1.10, 1.50, 0) (1.60, 1.50, 0)
(2.60, 1.50, 0) (1.10, 2.10, 0)
(1.60, 2.60, 0) (2.60, 3.60, 0)
(1.10, 1.56, 20) (1.60, 1.54, 20)
(2.45, 1.53, 20) (1.15, 2.16, 20)
(1.60, 2.71, 34) (2.35, 3.44, 20)
(1.20, 1.69, 40) (1.60, 1.80, 52)
(2.25, 1.66, 40)
A polishing apparatus characterized by being inside a space surrounded by a curved surface passing through.
研磨剤及びまたは研磨液を散布または含浸した円形パッドを回転させ、該パッドの中心から所定距離偏心した位置を中心として被加工物を回転させながら該パッドに押しつけて被加工物を研磨加工するポリッシング方法において、加工中に被加工物を往復円弧運動をするように揺動し、該揺動半径rsと被加工物の半径rwの比Rs=rs/rw、揺動角振幅φ(度)、被加工物の揺動角振幅内の中央における前記パッドの中心からの被加工物の偏心距離rcと被加工物の半径rwの比Rc=rc/rwが、Rc−Rs−φ直交3次元座標系で表示したとき、被加工物の相対すべり距離をS、前記パッド側の相対すべり距離の最大値をLmax、前記パッドの必要最小径roと被加工物の半径rwの比Ro=ro/rwとして(Lmax/S)×Roの最小値の10%増とする包絡線で囲まれ、さらに0.5rw+ro−rc以上、ro以下となるようにrsに制限を加えた空間であって、下記15点:
(1.10,1.50,0)(1.60,1.50,0)
(2.60,1.50,0)(1.10,2.10,0)
(1.60,2.60,0)(2.60,3.60,0)
(1.10,1.56,20)(1.60,1.54,20)
(2.45,1.53,20)(1.15,2.16,20)
(1.60,2.71,34)(2.35,3.44,20)
(1.20,1.69,40)(1.60,1.80,52)
(2.25,1.66,40)
を通る曲面で囲まれた空間の内部となるようにしたことを特徴とするポリッシング方法。
A circular pad sprayed or impregnated with an abrasive and / or polishing liquid is rotated, and the workpiece is polished by pressing against the pad while rotating the workpiece about a position decentered by a predetermined distance from the center of the pad. In the polishing method, the workpiece is swung in a reciprocating arc motion during machining, the ratio Rs = rs / rw between the rocking radius rs and the workpiece radius rw, and the swing angle amplitude φ (degrees). The ratio Rc = rc / rw of the work piece eccentric distance rc and the work piece radius rw from the center of the pad at the center within the swing angle amplitude of the work piece is Rc-Rs-φ orthogonal three-dimensional. When displayed in the coordinate system, the relative sliding distance of the workpiece is S, the maximum relative sliding distance on the pad side is Lmax, and the ratio of the required minimum diameter ro of the pad to the radius rw of the workpiece Ro = ro / as rw and (Lmax / S) 10% increase of the minimum value of × Ro 2 That is surrounded by the envelope, further 0.5rw + ro-rc above, a space obtained by adding a restriction to rs such that ro less, the following 15 points:
(1.10, 1.50, 0) (1.60, 1.50, 0)
(2.60, 1.50, 0) (1.10, 2.10, 0)
(1.60, 2.60, 0) (2.60, 3.60, 0)
(1.10, 1.56, 20) (1.60, 1.54, 20)
(2.45, 1.53, 20) (1.15, 2.16, 20)
(1.60, 2.71, 34) (2.35, 3.44, 20)
(1.20, 1.69, 40) (1.60, 1.80, 52)
(2.25, 1.66, 40)
A polishing method characterized by being inside a space surrounded by a curved surface passing through.
JP7146094A 1994-03-16 1994-03-16 Polishing apparatus and method Expired - Lifetime JP3651923B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7146094A JP3651923B2 (en) 1994-03-16 1994-03-16 Polishing apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7146094A JP3651923B2 (en) 1994-03-16 1994-03-16 Polishing apparatus and method

Publications (2)

Publication Number Publication Date
JPH07251370A JPH07251370A (en) 1995-10-03
JP3651923B2 true JP3651923B2 (en) 2005-05-25

Family

ID=13461226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7146094A Expired - Lifetime JP3651923B2 (en) 1994-03-16 1994-03-16 Polishing apparatus and method

Country Status (1)

Country Link
JP (1) JP3651923B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103223638B (en) * 2013-04-28 2016-04-13 上海华力微电子有限公司 Chemical-mechanical grinding device
CN105856060B (en) * 2015-01-20 2019-07-12 中芯国际集成电路制造(上海)有限公司 The method of adjustment of grinding component shape

Also Published As

Publication number Publication date
JPH07251370A (en) 1995-10-03

Similar Documents

Publication Publication Date Title
US5674109A (en) Apparatus and method for polishing workpiece
KR100363039B1 (en) Polishing apparatus and method with constant polishing pressure
US5769699A (en) Polishing pad for chemical-mechanical polishing of a semiconductor substrate
KR100398957B1 (en) Polishing device and polishing method
US6184139B1 (en) Oscillating orbital polisher and method
JPH0621029A (en) Apparatus and method for chemical- mechanical polishing of semiconductor wafer
JPH0724714A (en) Notch part polishing device for wafer
US6656818B1 (en) Manufacturing process for semiconductor wafer comprising surface grinding and planarization or polishing
JP3663348B2 (en) Polishing apparatus and polishing method
JPH10180624A (en) Device and method for lapping
KR19990013530A (en) Polishing method of wafer and dressing method of polishing pad
JP3651923B2 (en) Polishing apparatus and method
KR20030040212A (en) Cmp device and production method for semiconductor device
JP2007059949A (en) Method for manufacturing semiconductor wafer
JP2002252189A (en) Polishing liquid for semiconductor wafer
JP3788035B2 (en) Polishing cloth dressing method
JP2001150320A (en) Grinding wheel for creating spherical surface
JPH1034528A (en) Polishing device and polishing method
KR20010049611A (en) Method for grinding the surface of workpiece
JPH11238714A (en) Method of cleaning
JP4122800B2 (en) Semiconductor wafer polishing method
JP3912296B2 (en) Polishing apparatus and polishing method
JPH03121773A (en) Polishing method for high flatness of silicon wafer
JP3427670B2 (en) Polishing apparatus and polishing method
JP2688584B2 (en) Thin plate polishing method

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040316

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040430

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20041207

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050105

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050112

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20050126

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050222

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050222

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100304

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110304

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110304

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120304

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120304

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130304

Year of fee payment: 8