JP3624283B2 - Manufacturing method of semiconductor device and manufacturing method of minute protrusion - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is a fine cone having a high aspect ratio, and can be used for, for example, a field emission device (FED), a quantum effect device, a high-frequency device, a probe of a scanning microscope, and the like. About the body.
[0002]
[Prior art]
Conventionally, it has been proposed to form minute protrusions on the order of μm or less on a semiconductor substrate and use these protrusions for an electron emission source or the like. As a method for producing the minute protrusions, it has been conventionally known that a specific crystal plane of a silicon substrate is etched by wet etching to form a cone as shown in FIG. In addition, “Low Voltage Silicon Microstructure Electron Source” (Hori Kazuyoshi et al., Shingaku Technical Report; ED94-95, P1-6) describes a method for producing a tower-like protrusion as shown in FIG. It is shown. The tower-like projections shown in FIG. 2B form a mask on a silicon substrate by photolithography, and using this mask, the silicon substrate is first anisotropically dry etched to form a columnar structure. Next, anisotropic wet etching is performed on the obtained columnar structure to sharpen the tip portion of the columnar structure as a conical shape.
[0003]
In addition, “Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with the Poly Dual Gate. 97. Jp. In addition, it is described that a projection as shown in FIG. 2C is formed on a substrate by forming a mask on a silicon substrate by photolithography and using the mask to perform isotropic dry etching on the substrate.
[0004]
[Problems to be solved by the invention]
When the fine protrusions as described above are applied to, for example, an electron emission source of a device, in order to obtain good device characteristics, it is preferable that the radius of curvature of the protrusion tip is small and the aspect ratio is large. This is because when the radius of curvature at the tip is large, the electron emission resistance is high, and the parasitic capacitance between the driving electrode such as a gate is large and it is difficult to operate at a low voltage. Even if the radius of curvature of only the protrusion tip is small, if the aspect ratio of the protrusion is small, the protrusion bottom area becomes large, the degree of integration as a semiconductor device cannot be improved, and the parasitic capacitance as described above is increased. It also becomes. Therefore, a projection having a large aspect ratio is desired.
[0005]
However, for example, in the projection shown in FIGS. 2A and 2C, the tip diameter of the projection is 100 nm to 300 nm, the bottom angle of the projection is about 30 °, and only a projection having an aspect ratio of about 1 is produced. I couldn't. 2 (b) describes that the radius of curvature of the tip of the protrusion can be 5 nm or less in the above-mentioned document, the bottom angle of the protrusion is about 30 ° as shown in FIG. It occupies as much as the bottom area of the protrusion shown in a).
[0006]
As described above, in the conventional manufacturing method, a high aspect ratio protrusion having a sharp tip and a small bottom area cannot be formed.
[0007]
It is an object of the present invention to provide a sharply shaped cone and a manufacturing method suitable for such a cone.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, in a method of manufacturing a semiconductor device according to the present invention, an impurity precipitation region is formed by introducing an impurity into a predetermined position of a semiconductor material substrate or a semiconductor material layer, and the impurity precipitation region is used as a micromask. High-selectivity anisotropic etching is performed on the material substrate or the material layer, and a cone having a micromask portion as an apex is formed on the etching exposed surface of the material substrate or the material layer.In the high selectivity anisotropic etching, the mixture ratio of the mixed gas used is adjusted to adjust the aspect ratio of the cone.
Alternatively, in the method of manufacturing a microprojection according to the present invention, a highly selective anisotropic etching is performed using the impurity precipitation region as a micromask, and a microprojection having a micromask portion as a vertex is formed on the exposed surface of the semiconductor material substrate or semiconductor material layer. FormationIn the high selectivity anisotropic etching, the mixing ratio of the mixed gas used is adjusted to adjust the aspect ratio of the microprojections.To do.
[0009]
Another feature of the present invention is thatImpurity is introduced into a predetermined position of the semiconductor material substrate or semiconductor material layer to form an impurity precipitation region, and the material substrate or the material layer is subjected to high selective anisotropic etching using the impurity precipitation region as a micromask, A method of manufacturing a semiconductor device in which a cone having a micromask portion as an apex is formed on an exposed exposed surface of a material substrate or the material layer, and the impurity precipitation after oxygen is introduced into a predetermined position of the semiconductor material substrate or the semiconductor material layer Introduce boron into the semiconductor material substrate or semiconductor material layer before heat treatment for forming the regionIt is to be.
[0010]
In addition, the present inventionIn other embodiments, the aboveA cone formed by etching the material substrate or material layer with high selectivity anisotropic etching using the impurity precipitation region formed at a predetermined position of the semiconductor material substrate or semiconductor material layer as a micromask, and having the impurity precipitation region as a vertex. And the diameter near the tipIs 1It has a cone shape with an aspect ratio of 10 or more at 0 to 30 nm.
In another aspect of the present invention, it is possible to obtain a microprojection having a height substantially equal to the distance from the formation position of the micromask to the etching exposed surface.
In another aspect of the present invention, the plurality of microprotrusions obtained by using a plurality of impurity precipitation regions as micromasks are each a cone, and the plurality of cones are similar to each other with a base angle of 80 ° or more. It can be a shape.
[0011]
Such a small cone (for example, a cone) according to the present invention is formed based on the following principle. FIG. 1 shows the principle of cone formation. For example, oxygen is introduced as an impurity into a semiconductor material substrate (a silicon substrate is taken as an example in the following description). In the present invention, the impurity means an element different from the main component of the material substrate or the material layer. However, when the main component has a plurality of elements, only a part of the elements means an impurity in the present invention.
[0012]
When heat treatment is performed on such a silicon substrate into which oxygen is introduced, an oxygen precipitation region (in other words, an oxygen precipitation defect SiO 2) is formed as an impurity precipitation region in the region into which oxygen has been introduced.₂) Is formed (see FIGS. 1A to 1B). After heat treatment, this silicon substrate is SiO 2₂When anisotropic etching is performed under a condition with a high selection ratio, oxygen precipitates having an etching rate different from that of Si crystal (here, it is harder to etch than Si crystal) become a micromask. An etching exposed surface is formed (FIG. 1C).
[0013]
In the anisotropic etching, for example, when an oxygen precipitation region in a silicon substrate or a silicon film is used as a micromask, dry etching (for example, reactive ion etching) using a gas containing a halogen-based (Br, Cl, F) gas is used. Can be performed. When etching is performed under such conditions, a cone having an oxygen precipitation region as a vertex as shown in FIG. 1C is obtained.
[0014]
The cone according to the present invention obtained by such a principle is a very elongated needle-like cone having a radius of curvature near the tip of several nanometers to several tens of nanometers and an aspect ratio of about 10 as described above. . Further, the base angle of the cone can be made extremely large, for example, about 80 ° or more, and the height of the cone can be made about several μm.
[0015]
In the present invention, the aspect ratio of the cone can be set to 10 or more by controlling the mixing ratio of the mixed gas used for the anisotropic etching, for example. However, it can be smaller than 10 as required.
[0016]
In the present invention, if the etching conditions are the same, the base angles of the plurality of cones obtained by using the plurality of impurity precipitation regions as the micromasks are constant, and each cone has a similar shape. Therefore, for example, by forming the impurity deposition region so that the planar position and the depth position thereof are the desired position, a sharp and the same shape and size are formed at a predetermined position in the semiconductor material substrate or the semiconductor material layer. A plurality of cones can be formed.
[0017]
Further, in the present invention, for example, a method of introducing a predetermined amount of oxygen into a silicon material substrate or layer and introducing boron ions that are more easily bonded to oxygen than silicon can be applied, thereby making the micromask more reliable. It becomes possible to form.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention (hereinafter referred to as embodiments) will be described with reference to the drawings.
[0019]
[Embodiment 1]
In the cone of the present invention, an impurity precipitation region is formed in a specific region in a semiconductor material substrate or a predetermined semiconductor material layer, and this is used as a micromask to perform high-selectivity anisotropic etching. A mask can be formed as a vertex. This cone is created not only as a cone but also as an elliptical cone or a polygonal cone.
[0020]
FIG. 3 shows an example of a method for manufacturing such a cone. In the following, a case where a silicon substrate is used as the semiconductor material substrate and oxygen is introduced as an impurity in the silicon substrate to form an oxygen precipitation region (precipitation defect) will be described as an example.
[0021]
If the silicon substrate 10 to be used contains oxygen in a high concentration, the oxygen itself is deposited and becomes a micromask. Therefore, in this embodiment, a low oxygen concentration substrate (for example, an oxygen concentration of 10¹⁰/ Cm³) Is used.
[0022]
After cleaning the silicon substrate 10 having such a low oxygen concentration (FIG. 3A), a resist pattern is formed on the surface of the silicon substrate 10 by photolithography, and an impurity is formed in the opening of the resist 12 by, for example, ion implantation. Oxygen ions are implanted into the substrate 10 at a predetermined depth (FIG. 3B).
[0023]
After the introduction of oxygen ions, the resist 12 is removed, and the substrate 10 is subjected to heat treatment under predetermined conditions (for example, a temperature of 600 ° C. to 1100 ° C., an oxidizing or non-oxidizing atmosphere). As a result, oxygen precipitation defects (SiO 2) are formed at a predetermined depth in the opening region of the resist 12.₂), That is, the oxygen precipitation region 14 is formed (FIG. 3C).
[0024]
The substrate 10 that has been subjected to the heat treatment is SiO 2 when the heat treatment is performed in an oxidizing atmosphere.₂Even when a film is formed and heat treatment is performed in a non-oxidizing atmosphere, an oxide film is formed on the surface, and if there is an oxide film, this serves as a mask to prevent anisotropic etching. Therefore, first, this oxide film is removed. Then, anisotropic etching with a high selection ratio, for example, RIE (reactive ion etching) is performed. By performing this anisotropic etching to a predetermined depth, a cone 16 having a height corresponding to the etching amount apexes the oxygen precipitation region 14 on the exposed surface of the silicon substrate 10 as shown in FIG. Formed as. In addition, depending on conditions such as the shape of the micromask, not only a cone but also an elliptical cone and other polygonal pyramids can be formed in the same manner as a cone.
[0025]
Here, in the anisotropic etching, etching is performed by separately supplying an etching gas from a gas supply device into the etching apparatus. As the etching gas, for example, oxygen etching in a silicon substrate is generally used. When etching is performed using a magnetron RIE apparatus, a halogen-based mixed gas (for example, HBr / NF)₃/ He + O₂It is preferable to use a mixed gas). This halogen-based etching gas has a higher etching selectivity ratio in the order of F, Cl, and Br with respect to an oxygen precipitation region (precipitation defect) in silicon. Therefore, in order to surely form a cone by this anisotropic etching, a Br-based gas is most preferable, and Cl and F are in this order. In addition, it is thought that a protective film made of a reaction product or the like adheres to the side wall of the cone by performing RIE, and this contributes to maintaining the conical shape. For example, it can be removed by soaking in dilute hydrofluoric acid. However, this side wall protective film removing step is not necessarily required and may be omitted.
[0026]
The cone formed on the silicon substrate as described above has, for example, an aspect ratio of about 10 or more, a tip diameter of 10 nm to 30 nm (curvature radius of several nm to tens of nm), and a cone base angle of about 10 nm or more. A sharp cone having a high aspect ratio with a value of 80 ° or more, such as 85 °, and a height of several μm can be obtained. The diameter near the bottom of the cone is as small as about 0.5 μm, for example.
[0027]
FIG. 4 is a SEM photograph of a cone obtained by anisotropic etching using an oxygen precipitation region formed on a silicon substrate as a micromask. In addition, the cone of FIG. 4 is specifically formed on the following conditions. First, the silicon substrate has an oxygen concentration of 1.6 × 10¹⁸cm^-3This CZ substrate was heat-treated at 1000 ° C. for 220 minutes in an oxygen atmosphere, and an oxygen precipitation region (SiO 2) serving as a micromask in the CZ substrate.₂) Is formed. Furthermore, a general magnetron RIE apparatus is used for this substrate, and HBr / NF is used.₃/ He + O₂The silicon substrate was subjected to high selectivity anisotropic etching using a mixed gas. A plurality of cones are formed on the substrate with the micromask as the apex, one of which is the cone shown in FIG. 4A. From the figure, the cone base angle is about 85 °, the aspect ratio of the cone (the bottom of the cone) It can be seen that the ratio of the diameter to the cone height is 10 or more. FIG. 4B is an enlarged photograph of the tip of the cone of FIG. 4A, and it can be seen from this photograph that the radius of curvature of the tip of the cone is about several tens of nanometers.
[0028]
Therefore, as is apparent from FIG. 4, by performing anisotropic etching using the oxygen precipitation region as a micromask, it is possible to actually form a cone having a small tip curvature and a large aspect ratio that cannot be realized by a conventionally proposed method. I understand.
[0029]
(Conditions for cone formation)
Hereinafter, conditions for forming the cone 16 as described above will be described.
[0030]
(I) Micromask formation density control and size control
FIG. 5 shows the relationship between the oxygen concentration in the silicon substrate and the Si cone density formed. FIG. 5 shows the density of Si cones obtained when high selectivity anisotropic etching is performed on the CZ silicon substrates having different oxygen concentrations under the same conditions as those described in FIG. It is a measurement result. From this measurement result, if the amount of oxygen used as a raw material for the micromask is large, the density of the Si cone formed in the substrate increases, and the amount of oxygen introduced into the substrate is controlled to control the micro that is the source of the Si cone. Mask (oxygen precipitate: SiO₂) Can be controlled.
[0031]
FIG. 6 shows the oxygen concentration of 1.1 × 10¹⁸cm^-35 is an optical micrograph showing the dependency of Si cone density on the B ion implantation obtained when B ion implantation is performed on the CZ substrate before the heat treatment for oxygen precipitation.
[0032]
The photograph shown in FIG. 6A shows the B ion implantation concentration of 7 × 10.¹³cm^-2The surface of the CZ substrate after anisotropic etching obtained in this case is shown. After etching, the presence of Si cones is not observed on the obtained substrate surface. The same result was obtained when B ions were not implanted. Therefore, the implantation concentration of B ions is 7 × 10.¹³cm^-2In the following cases, the oxygen-containing concentration is 1.1 × 10¹⁸cm^-3It can be seen that no Si cone is formed even with the CZ substrate.
[0033]
In contrast, the implantation concentration of B ions is 1 × 10.¹⁴cm^-2In this case, as can be seen from the surface of the CZ substrate after anisotropic etching shown in FIG. 6B, the presence of Si cones as black dots is recognized on the surface. This not only introduces oxygen into the substrate, but also at least 7 × 10 6 before the heat treatment.¹³cm^-2It can be seen that it is preferable to perform heat treatment by implanting more B ions. In addition, the measurement result of the above-mentioned FIG.¹⁴cm^-2It is a result at the time of injecting.
[0034]
At present, micro masks are more likely to be generated by B ion implantation. B is more easily bonded to O than Si. When this B ion is supplied into a silicon crystal, a B—O bond is formed in the silicon crystal. It is considered that this is because the small clusters of B—O bonds serve as nuclei and Si—O bonds are formed.
[0035]
The size of the micromask, that is, the size of the impurity precipitation region can be controlled by adjusting the heat treatment conditions and the above-described introduced oxygen amount (including B ion implantation amount) conditions. Here, the heat treatment conditions are, for example, a temperature of about 600 ° C. to 1100 ° C., about 10 minutes to 5 hours, and it is preferable to perform the treatment in an oxidizing or non-oxidizing atmosphere. In this case, the micromask area, that is, the oxygen precipitation region area increases, and conversely, if the processing time is further increased at the same processing temperature, the oxygen precipitation region area increases.
[0036]
As described above, the impurity precipitation region serving as a micromask used for forming the cone of the present invention can be controlled by the impurity concentration introduced into the semiconductor material and the introduction of B ions. It can also be seen that the size of the impurity precipitation region can be controlled by a combination of control of the impurity concentration and B ion concentration and the heat treatment conditions.
[0037]
(Ii) Micromask position control
Next, the position control of the impurity precipitation region serving as a micromask will be described. In the cone according to the present invention, when the anisotropic etching conditions are set to be the same, when a plurality of cones (for example, cones) are formed with a plurality of micromasks as vertices, each cone is a similar shape and the height of the cone Substantially coincides with the distance from the formation position of the micromask to the etching exposed surface. Therefore, in order to form a plurality of cones having the same shape and the same shape in the same semiconductor substrate or layer, it is necessary to control the depth of the micromask formed in these substrates or layers.
[0038]
Regarding the control of the depth direction of the micromask, the following two methods are conceivable. The first method is a method of introducing impurities by, for example, an ion implantation method as exemplified in the Si cone forming step of FIG. This is because in the ion implantation method, the depth of the introduced impurity can be controlled by controlling the implantation energy and the like. The second method is to epitaxially grow a silicon crystal region in a portion forming a cone (for example, a cone) to form a micromask.₂In this method, epitaxial growth is performed while introducing an impurity gas (for example, oxygen gas) or the like into the atmospheric gas at a position where it is desired to form the film.
[0039]
For controlling the planar direction of the micromask, a mask (for example, a resist mask) having an opening only in the cone formation region is formed on the semiconductor substrate or semiconductor layer by photolithography, for example, and impurities are introduced into the mask opening by ion implantation or the like. Then, a micromask can be formed at a predetermined plane position. Even when impurities are introduced during epitaxial growth, a semiconductor material layer formed by epitaxial growth may be selectively formed only in the cone formation region. This can be realized by, for example, a method of previously covering a region other than the cone forming region with a mask. In addition, after the epitaxial growth layer (with impurity gas introduction step) is formed on the entire surface of the substrate, the region other than the cone forming region is etched away before the heat treatment, or after the heat treatment, the region other than the cone forming region is removed. This can be realized by a method such as removing the region by an etching method other than anisotropic etching.
[0040]
(Iii) Control of cone aspect ratio
When a semiconductor substrate or a semiconductor material is anisotropically etched by RIE as described above using a micromask, reaction products adhere to the side surfaces of the formed cone. During anisotropic etching, the reaction product adhering to the side surface of the cone serves as a protective film and contributes to maintaining the shape of the cone (for example, a cone). Is controlled (the aspect ratio of the cone). The amount of the sidewall protective film is determined by the etching gas (for example, NF) of the etching mixed gas.₃) And the deposition gas (for example, HBr gas) can be controlled by changing the mixing ratio. Specifically, if the etching gas ratio is increased, the cone has a higher aspect ratio that is finer and sharper. Conversely, if the deposition gas ratio is increased, the aspect ratio of the cone is decreased.
[0041]
Therefore, the aspect ratio of the cone can be controlled by adjusting the ratio of the mixed gas used for anisotropic etching to control the amount of reaction product and the amount of adsorption of the reaction product to the cone. Can do.
[0042]
In the first embodiment, the case where a silicon substrate is used as the semiconductor material substrate has been described as an example. The semiconductor material layer may be a single crystal silicon layer or other material layer formed on a semiconductor or insulator substrate. In addition, the micromask is composed of oxygen precipitates (SiO₂However, the material may be nitrogen precipitates (SiN) or carbon precipitates (SiC) in the Si material by making the etching gas and the etching conditions appropriate according to the material. In this case, as the etching material for the precipitates SiN and SiC, the above-mentioned SiO₂As in the case of, a fluorine-based gas can be used as an etching gas for anisotropic etching. Then, these SiN and SiC are anisotropically etched using, for example, a fluorine-based gas material, so that cones (for example, cones) having these apexes can be formed. In addition, SiO₂Si in the material is the main component SiO₂It can be considered that the impurity has a different etching rate, and a cone can be formed using this as a micromask. Furthermore, it is also possible to form cones using Si in the SiN material or Si in the SiC material as a micromask.
[0043]
[Embodiment 2]
Next, a manufacturing process when the cone (for example, cone) according to the present invention obtained by the above-described method is used for a semiconductor device, for example, a field electron emission element or an electron gun will be described with reference to FIG. The step shown in FIG. 7 is performed subsequent to the step shown in FIG.
[0044]
After forming the cone 16 on the silicon substrate 10 and removing the side wall protective film as in the first embodiment (FIG. 3D), the Si cone 16 is buried as an insulating layer as shown in FIG. 7A. And SiO₂Layer 18 is formed. In the second embodiment, this SiO is used in the next step.₂For example, in order to form a polycrystalline silicon (poly-Si) film as a gate electrode on the layer 18, the layered SiO is laminated so that the tip of the Si cone 16 is not etched when patterning the poly-Si.₂The thickness of the layer 18 is greater than the height of the Si cone 16, for example, a thickness of about 10 nm + the thickness of the Si cone 16.
[0045]
SiO₂After the layer 18 is formed to a predetermined thickness on the silicon substrate 10, SiO 2 is formed.₂A poly-Si film is formed on the layer 18. Further, a resist is formed on the entire surface of the poly-Si film, and a resist pattern having an opening on the formation region of the Si cone 16 is formed by photolithography. By performing RIE using this resist pattern as a mask, the poly-Si film on the resist opening, that is, the Si cone formation region is removed, and the gate electrode 20 is obtained (FIG. 7B).
[0046]
Next, the resist used to form the gate electrode 20 is removed, and the SiO exposed in the opening of the gate electrode 20 is removed.₂Layer 18 is etched by RIE. As a result, the Si cone 16 made of Si single crystal of the same material as the substrate is exposed in the opening of the gate electrode 20.
[0047]
Here, in the oxygen precipitation region forming step of Embodiment 1 (see FIG. 3B), by forming a plurality of oxygen precipitation regions at a certain depth in a plurality of locations in the substrate 10, Are formed with cones 16 having the same shape at a plurality of locations. Then, the substrate on which such a plurality of cones 16 are formed is subjected to the process as shown in FIG. 7, so that a plurality of gate electrode opening regions as shown in FIG. Thus, the structure 30 in which the Si cone 16 is exposed is obtained.
[0048]
Further, if a substrate 42 made of glass or the like on which an RGB fluorescent material layer 40 is formed is disposed so as to face such a structure 30, the structure 30 can be used as a field electron-emitting device or a fine electron gun. Conventional devices such as a color flat display (FED) can be constructed. In such a configuration, a predetermined driving voltage is applied to the gate electrode 20 at a predetermined position, and electrons (e⁻) Can be emitted, the fluorescent material layer 40 in the corresponding region can emit light, and a desired display is performed.
[0049]
Furthermore, the structure 30 is not limited to the structure as shown in FIG. 8A, and a plurality of Si cones 16 may be formed in one gate electrode opening region as shown in FIG. 8B. . The structure 30 as shown in FIG. 8B is realized by controlling the number of micromasks formed per unit area by adjusting the impurity concentration introduced when forming the precipitation region, the heat treatment conditions, and the like. The number of cones formed in each gate electrode opening region can be made equal.
[0050]
The cone of the present invention is not limited to the field emitter as exemplified in the second embodiment, but may be used as a high-frequency switching device, a quantum effect device, a probe of a scanning microscope, or the like. Is possible.
[0051]
【The invention's effect】
As described above, the semiconductor device of the present invention, MicroprotrusionsOr according to the manufacturing method, it becomes possible to form a very sharp thin cone. Since this cone is formed with this micromask as the apex by forming a deposition region that becomes a micromask in the substrate and performing anisotropic etching, the size is smaller than the limit of exposure resolution such as photolithography, for example. It is also possible to easily produce a cone such as this cone.
[0052]
Moreover, if the cone as in the present invention is used in various semiconductor devices, for example, the parasitic capacitance between the tip of the cone and a predetermined drive electrode can be reduced, and when used in a high-frequency switching device or the like, Switching speed can be increased. In addition, the cone of the present invention has not only a thin tip but also a large aspect ratio and a very small bottom surface of the cone, so that more cones can be formed in a unit area, resulting in higher device integration Is also very advantageous. Furthermore, when electrons are emitted from the tip of the cone, the tip of the cone is very thin, so that electrons are likely to be emitted, and the drive voltage can be lowered when used as an electron-emitting device. .
[Brief description of the drawings]
FIG. 1 is a diagram schematically showing the cone formation principle of the present invention.
FIG. 2 is a diagram showing a cone and a conventional protrusion obtained in the present invention.
FIG. 3 is a diagram for explaining a method for producing, for example, a cone as a cone according to the present invention.
FIG. 4 shows a photomicrograph of a cone obtained by highly selective anisotropic etching according to the present invention.
FIG. 5 is a diagram showing the relationship between the formation density of Si cones and the substrate oxygen concentration according to an embodiment of the present invention.
FIG. 6 is a view showing a photomicrograph for explaining the relationship between the B ion implantation concentration and the density of the Si cone obtained by high selective anisotropic etching according to the embodiment of the present invention.
FIGS. 7A to 7C are diagrams illustrating a method for manufacturing a semiconductor device using a cone according to the present invention. FIGS.
FIG. 8 is a diagram for explaining a configuration of a semiconductor device according to an embodiment of the present invention.
[Explanation of symbols]
10 substrate (Si substrate), 12 resist, 14 oxygen precipitate, 16 cone, 18 SiO₂Layer, 20 gate electrode, 30 structure, 40 fluorescent material layer, 42
Substrate (glass substrate).

Claims (9)

Impurity precipitation region is formed by introducing impurities into a predetermined position of the semiconductor material substrate or semiconductor material layer,
Highly selective anisotropic etching is performed on the material substrate or the material layer using the impurity precipitation region as a micromask,
A method for manufacturing a semiconductor device, wherein a cone having a micromask portion as a vertex is formed on an etching exposed surface of the material substrate or the material layer,
In the high-selectivity anisotropic etching, a method for manufacturing a semiconductor device, wherein a mixture ratio of a mixed gas to be used is adjusted to adjust an aspect ratio of the cone. Impurity precipitation region is formed by introducing impurities into a predetermined position of the semiconductor material substrate or semiconductor material layer,
Highly selective anisotropic etching is performed on the material substrate or the material layer using the impurity precipitation region as a micromask,
A method for manufacturing a semiconductor device, wherein a cone having a micromask portion as a vertex is formed on an etching exposed surface of the material substrate or the material layer,
A semiconductor device characterized by introducing boron into the semiconductor material substrate or semiconductor material layer after introducing oxygen into a predetermined position of the semiconductor material substrate or semiconductor material layer and before heat treatment for forming the impurity precipitation region. Manufacturing method. In the manufacturing method of the semiconductor material substrate of Claim 1 or Claim 2,
The cones, the vertices of the impurity deposition region, and a diameter near the tip is 10 nm to 30 nm, a method of manufacturing a semiconductor device having an aspect ratio, characterized in that it is formed into 10 or more cone-shaped . High selectivity anisotropic etching using the impurity precipitation region as a micromask,
A method of forming a microprotrusion having a micromask portion as an apex on an exposed exposed surface of a semiconductor material substrate or a semiconductor material layer,
In the high-selectivity anisotropic etching, a method of manufacturing a microprojection, comprising adjusting a mixture ratio of a mixed gas to be used and adjusting an aspect ratio of the microprojection. The diameter near the tip of the front Symbol microprojections method of microprojections of claim 4, characterized in that a 10 nm to 30 nm. In the manufacturing method of the microprotrusion according to claim 4 or claim 5,
A method of manufacturing a microprojection, wherein the aspect ratio of the microprojection is 10 or more. In the manufacturing method of the microprotrusion as described in any one of Claims 4-6,
A method of manufacturing a microprojection, wherein the height of the microprojection is equal to a distance from a formation position of the micromask to an etching exposed surface. In the manufacturing method of the microprotrusion as described in any one of Claims 4-7,
The method of manufacturing a microprojection, wherein the microprojection is a cone and is any one of a cone, an elliptical cone, and a polygonal pyramid. In the manufacturing method of the microprotrusion as described in any one of Claims 4-8,
The plurality of microprotrusions obtained using the plurality of impurity precipitation regions as micromasks, respectively, are cones, and the plurality of cones have a similar shape with a base angle of 80 ° or more. Manufacturing method of microprotrusions.

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