JP3579078B2 - Semiconductors for photoelectric conversion materials - Google Patents
Semiconductors for photoelectric conversion materials Download PDFInfo
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- JP3579078B2 JP3579078B2 JP06806494A JP6806494A JP3579078B2 JP 3579078 B2 JP3579078 B2 JP 3579078B2 JP 06806494 A JP06806494 A JP 06806494A JP 6806494 A JP6806494 A JP 6806494A JP 3579078 B2 JP3579078 B2 JP 3579078B2
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- sensitizing dye
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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Description
【０００１】
【産業上の利用分野】
本発明は、光電変換材料に用いる半導体に関する。また、その半導体を用いた太陽電池に関する。
【０００２】
【従来の技術】
光電変換材料とは、電極間の電気化学反応を利用して光エネルギーを電気エネルギーに変換する材料である。光電変換材料に光を照射すると、一方の電極側で電子が発生し、対電極に移動する。対電極に移動した電子は、電解質中をイオンとして移動して一方の電極にもどる。すなわち、光電変換材料は光エネルギーを電気エネルギーとして連続して取り出せる材料であり、たとえば、太陽電池などに利用されている。この光電変換材料は、半導体表面に可視光領域に吸収を持つ分光増感色素を吸着させたものが用いられている。たとえば、特開平１−２２０３８０号には、金属酸化物半導体の表面に、遷移金属錯体などの分光増感色素層を有する太陽電池を記載している。また、特許出願公表平５−５０４０２３号には、金属イオンでドープした酸化チタン半導体層の表面に、遷移金属錯体などの分光増感色素層を有する太陽電池を記載している。
【０００３】
【発明が解決しようとする課題】
前記の特開平１−２２０３８０号や特許出願公表平５−５０４０２３号には、半導体の表面に分光増感色素を吸着する方法として、半導体を分光増感色素の水溶液に室温下で浸漬する方法を記載している。しかしながら、この方法では、必要な量の分光増感色素を吸着し難く、また、強固に吸着することができない。このため、吸着処理に長い時間が必要になったり、また、半導体の光電変換効率が低下するなどの問題がある。
【０００４】
【課題を解決するための手段】
本発明者らは、前記の問題を解決するために、種々の開発研究を行った結果、（１）半導体と分光増感色素とを含有した液体を加熱還流して、該半導体表面に該分光増感色素を吸着させると、優れた光電変換効率を有する光電変換材料用半導体が効率よく得られること、（２）本発明の光電変換材料用半導体は、太陽電池などの光電変換材料に有用であることなどを見出し、本発明を完成した。
すなわち、本発明の目的は、優れた光電変換効率を有する光電変換材料用半導体を提供することにある。さらに、この光電変換材料用半導体を用いた太陽電池などの光電変換材料を提供することにある。
【０００５】
本発明は、液体に分光増感色素を溶解するとともに半導体を入れて、半導体と分光増感色素とを含有した液体を調製し、次いで、該液体の（沸点−１０℃）〜沸点の温度範囲に加熱し、還流下、該温度を保持して、半導体表面に分光増感色素を吸着させることを特徴とする光電変換材料用半導体の製造方法である。本発明において、半導体としては、酸化チタン、酸化亜鉛、酸化タングステン、チタン酸バリウム、チタン酸ストロンチウム、硫化カドミウムなどの公知の半導体の一種または二種以上を用いることができる。特に、安定性、安全性の点から酸化チタンが好ましい。本発明において、酸化チタンとはアナタース型酸化チタン、ルチル型酸化チタン、無定形酸化チタン、メタチタン酸、オルソチタン酸などの各種の酸化チタンあるいは水酸化チタン、含水酸化チタンを意味する。前記の半導体は、粒子状または膜状の半導体を用いることができる。膜状の半導体、特に、酸化チタン膜を用いるのが好ましく、導電性支持体上に形成した膜状の半導体を用いるのが好ましい。
【０００６】
また、本発明において、分光増感色素は、可視光領域および／または赤外光領域に吸収を持つものであり、種々の金属錯体や有機色素の一種または二種以上を用いることができる。本発明においては、分光増感色素の分子中にカルボキシル基、ヒドロキシアルキル基、ヒドロキシル基、スルホン基、カルボキシアルキル基の官能基を有するものが半導体への吸着が早いため、好ましい。また、分光増感の効果や耐久性に優れているため、金属錯体が好ましい。金属錯体としては、銅フタロシアニン、チタニルフタロシアニンなどの金属フタロシアニン、クロロフィル、ヘミン、特開平１−２２０３８０号や特許出願公表平５−５０４０２３号に記載のルテニウム、オスミウム、鉄、亜鉛の錯体を用いることができる。有機色素としては、メタルフリーフタロシアニン、シアニン系色素、メロシアニン系色素、キサンテン系色素、トリフェニルメタン色素を用いることができる。シアニン系色素としては、具体的には、ＮＫ１１９４、ＮＫ３４２２（いずれも日本感光色素研究所製）が挙げられる。メロシアニン系色素としては、具体的には、ＮＫ２４２６、ＮＫ２５０１（いずれも日本感光色素研究所製）が挙げられる。キサンテン系色素としては、具体的には、ウラニン、エオシン、ローズベンガル、ローダミンＢ、ジブロムフルオレセインが挙げられる。トリフェニルメタン色素としては、具体的には、マラカイトグリーン、クリスタルバイオレットが挙げられる。
【０００７】
前記の半導体と前記の分光増感色素とを含有した液体を加熱還流して、該半導体表面に該分光増感色素を吸着させる。前記の液体としては、使用する分光増感色素を溶解するものであればよく、具体的には、水、アルコール、トルエン、ジメチルホルムアミドを用いることができる。前記の液体に半導体と分光増感色素とを含有させ、次いで、該液体の（沸点−１０℃）〜沸点、好ましくは（沸点−５℃）〜沸点の温度範囲に加熱し、還流下、該温度を保持する。加熱還流の時間は適宜設定することができるが、５分〜４８時間程度が適当である。半導体と分光増感色素の含有量は、用途に応じて適宜設定できる。このようにして、本発明の光電変換材料用半導体を得る。必要に応じて、本発明の光電変換材料用半導体を加熱還流した液体から分離したり、乾燥したり、あるいは焼成したりしてもよい。
【０００８】
本発明の光電変換材料用半導体が粒子状の場合には、光電変換材料用半導体を導電性支持体に塗布あるいは吹き付けて、該導電性支持体上に該光電変換材料用半導体の膜を形成して、光電変換材料に用いるのがよい。また、本発明の光電変換材料用半導体が膜状であって、導電性支持体上に保持していない場合には、光電変換材料用半導体を導電性支持体上に付けて、光電変換材料に用いるのがよい。
【０００９】
本発明の光電変換材料用半導体は太陽電池に用いることができる。すなわち、透明性導電膜をコートしたガラス板などの支持体上に光電変換材料用半導体の膜を形成して電極とし、次に、対電極として別の透明性導電膜をコートしたガラス板などの支持体を備え、これらの電極間に電解質を封入して太陽電池とすることができる。本発明の光電変換材料用半導体に吸着した分光増感色素に太陽光を照射すると、分光増感色素は可視領域の光を吸収して励起する。この励起によって発生する電子は半導体に移動し、次いで、透明導電性ガラス電極を通って対電極に移動する。対電極に移動した電子は、電解質中の酸化還元系を還元する。一方、半導体に電子を移動させた分光増感色素は、酸化体の状態になっているが、この酸化体は電解質中の酸化還元系によって還元され、元の状態に戻る。このようにして、電子が流れ、本発明の光電変換材料用半導体を用いた太陽電池を構成することができる。
【００１０】
【実施例】
本発明を以下の実施例により説明するが、本発明はこれに限定されるものではない。
【００１１】
実施例１
１．半導体の調製
８０ｇ／ｌの硫酸チタニル溶液１リットルを８５℃に加熱し、この温度で３時間保持し、硫酸チタニルを加水分解して酸化チタン微粒子を得た。このようにして得られた酸化チタン微粒子を濾過し、洗浄した後、水に分散させて、ＴｉＯ２ 基準で２００ｇ／ｌの懸濁液とした。次いで、この懸濁液に硝酸水溶液を添加し、該懸濁液のｐＨを１．０にした後、オートクレーブに入れ、１８０℃の温度で１３時間、飽和蒸気圧下で水熱処理を行った。次に、この懸濁液に、懸濁液中のＴｉＯ２ 基準に対してポリエチレングリコール（平均分子量２００００）４０重量％を添加し、６０℃の温度に加熱した後、フッ素をドープした酸化スズをコートした透明導電性ガラス板に塗布し、自然乾燥し、引き続き、６００℃の温度で３０分間焼成して、支持体上に膜状の酸化チタンを形成した。
【００１２】
２．分光増感色素の吸着
シス−（ＳＣＮ− ）２ −ビス（２，２’−ビピリジル−４，４’−ジカルボキシレート）ルテニウム（ＩＩ）で表される分光増感色素をエタノール液に溶解した。この分光増感色素の濃度は３×１０−４モル／ｌであった。次に、このエタノールの液体に、膜状の酸化チタンを形成した前記の支持体を入れ、加熱し、沸点の温度で加熱還流を１５分間して、本発明の光電変換材料用半導体（試料Ａ）を得た。この試料Ａの分光増感色素の吸着量は、酸化チタン膜の比表面積１ｃｍ２ あたり６１μｇであった。
【００１３】
３．光電変換材料の作成
前記の試料Ａを一方の電極として備え、対電極として、フッ素をドープした酸化スズをコートし、さらにその上に白金を担持した透明導電性ガラス板を用いた。２つの電極の間に電解質を入れ、この側面を樹脂で封入した後、リード線を取付けて、本発明の光電変換材料（試料Ｂ）を作成した。なお、前記の電解質は、体積比が１：４であるアセトニトリル／炭酸エチレンの混合溶媒に、テトラプロピルアンモニウムアイオダイドとヨウ素とを、それぞれの濃度が０．４６モル／ｌ、０．０６モル／ｌとなるように溶解したものを用いた。
前記の試料Ｂに、ソーラーシュミレーターで１００Ｗ／ｍ２ の強度の光を照射したところ、Ｖｏｃ（開回路状態の電圧）は０．６２Ｖであり、Ｊｏｃ（回路を短絡したとき流れる電流の密度）は１．２２ｍＡ／ｃｍ２ であり、ＦＦ（曲線因子）は０．７０であり、η（変換効率）は５．３％であり、太陽電池として有用であることがわかった。
【００１４】
比較例１
前記実施例１の２．において、シス−（ＳＣＮ− ）２ −ビス（２，２’−ビピリジル−４，４’−ジカルボキシレート）ルテニウム（ＩＩ）で表される分光増感色素を溶解したエタノール液に、室温下、膜状の酸化チタンを形成した前記の支持体を入れ、１５分間保持すること以外は実施例１の２．と同様に処理して、光電変換材料用半導体（試料Ｃ）を得た。この試料Ｃの分光増感色素の吸着量は、酸化チタン膜の比表面積１ｃｍ２ あたり１０μｇであった。
【００１５】
比較例２
前記実施例１の２．において、シス−（ＳＣＮ− ）２ −ビス（２，２’−ビピリジル−４，４’−ジカルボキシレート）ルテニウム（ＩＩ）で表される分光増感色素を溶解したエタノール液に、室温下、膜状の酸化チタンを形成した前記の支持体を入れ、１６時間保持すること以外は実施例１の２．と同様に処理して、光電変換材料用半導体（試料Ｄ）を得た。この試料Ｄの分光増感色素の吸着量は、酸化チタン膜の比表面積１ｃｍ２ あたり６５μｇであった。
前記実施例１の３．において、前記の試料Ｄを用いること以外は実施例１の３．と同様に処理して、光電変換材料（試料Ｅ）を得た。前記の試料Ｅに、ソーラーシュミレーターで１００Ｗ／ｍ２ の強度の光を照射したところ、Ｖｏｃ（開回路状態の電圧）は０．５７Ｖであり、Ｊｏｃ（回路を短絡したとき流れる電流の密度）は１．０９ｍＡ／ｃｍ２ であり、ＦＦ（曲線因子）は０．６８であり、η（変換効率）は４．３％であった。
【００１６】
前記の実施例および比較例から明らかなように、半導体と分光増感色素とを含有した液体を加熱還流して、該半導体表面に該分光増感色素を吸着させると、分光増感色素が強固に吸着するため、優れた光電変換効率を有する光電変換材料用半導体が得られた。
【００１７】
【発明の効果】
本発明は、半導体と分光増感色素とを含有した液体を加熱還流して、該半導体表面に該分光増感色素を吸着させてなる光電変換材料用半導体であって、優れた光電変換効率を有するため、種々の光電変換材料に有用である。
また、本発明は、前記の光電変換材料用半導体を用いた太陽電池であって、廉価であって、しかも、優れた光電変換効率を有する。[0001]
[Industrial applications]
The present invention relates to a semiconductor used for a photoelectric conversion material. Further, the present invention relates to a solar cell using the semiconductor.
[0002]
[Prior art]
A photoelectric conversion material is a material that converts light energy into electric energy using an electrochemical reaction between electrodes. When light is irradiated to the photoelectric conversion material, electrons are generated on one electrode side and move to the counter electrode. The electrons that have moved to the counter electrode move as ions in the electrolyte and return to one electrode. That is, the photoelectric conversion material is a material that can continuously take out light energy as electric energy, and is used for, for example, a solar cell. As this photoelectric conversion material, a material in which a spectral sensitizing dye having absorption in a visible light region is adsorbed on a semiconductor surface is used. For example, JP-A-1-220380 describes a solar cell having a spectral sensitizing dye layer such as a transition metal complex on the surface of a metal oxide semiconductor. Further, Japanese Patent Application Laid-Open No. Hei 5-504033 discloses a solar cell having a titanium oxide semiconductor layer doped with metal ions and having a spectral sensitizing dye layer such as a transition metal complex on the surface.
[0003]
[Problems to be solved by the invention]
Japanese Patent Application Laid-Open No. Hei 1-220380 and Japanese Patent Application Laid-Open No. 5-504023 disclose a method of immersing a semiconductor in an aqueous solution of a spectral sensitizing dye at room temperature as a method of adsorbing the spectral sensitizing dye on the surface of the semiconductor. It has been described. However, in this method, a required amount of the spectral sensitizing dye is hardly adsorbed, and cannot be firmly adsorbed. For this reason, there are problems that a long time is required for the adsorption process and that the photoelectric conversion efficiency of the semiconductor is reduced.
[0004]
[Means for Solving the Problems]
The present inventors have conducted various development studies in order to solve the above-mentioned problems. As a result, (1) a liquid containing a semiconductor and a spectral sensitizing dye was heated and refluxed, and the spectral By adsorbing the sensitizing dye, a semiconductor for a photoelectric conversion material having excellent photoelectric conversion efficiency can be efficiently obtained. (2) The semiconductor for a photoelectric conversion material of the present invention is useful for a photoelectric conversion material such as a solar cell. The present inventors have found that there is something, and completed the present invention.
That is, an object of the present invention is to provide a semiconductor for a photoelectric conversion material having excellent photoelectric conversion efficiency. Another object is to provide a photoelectric conversion material such as a solar cell using the semiconductor for a photoelectric conversion material.
[0005]
The present invention dissolves a spectral sensitizing dye in a liquid and adds a semiconductor to prepare a liquid containing a semiconductor and a spectral sensitizing dye, and then prepares the liquid in a temperature range of (boiling point −10 ° C.) to boiling point. It was heated to under reflux, to hold the temperature, which is a photoelectric conversion material for semiconductor manufacturing method characterized by adsorbing spectral sensitizing dye on the semiconductor surface. In the present invention, as the semiconductor, one or more known semiconductors such as titanium oxide, zinc oxide, tungsten oxide, barium titanate, strontium titanate, and cadmium sulfide can be used. Particularly, titanium oxide is preferable from the viewpoint of stability and safety. In the present invention, the titanium oxide means various titanium oxides such as anatase-type titanium oxide, rutile-type titanium oxide, amorphous titanium oxide, metatitanic acid, orthotitanic acid, titanium hydroxide, and hydrous titanium oxide. As the semiconductor, a particulate or film semiconductor can be used. It is preferable to use a film-shaped semiconductor, particularly a titanium oxide film, and it is preferable to use a film-shaped semiconductor formed on a conductive support.
[0006]
In the present invention, the spectral sensitizing dye has an absorption in a visible light region and / or an infrared light region, and one or more kinds of various metal complexes and organic dyes can be used. In the present invention, those having a functional group of a carboxyl group, a hydroxyalkyl group, a hydroxyl group, a sulfone group, or a carboxyalkyl group in the molecule of the spectral sensitizing dye are preferable because of quick adsorption to a semiconductor. Further, a metal complex is preferred because of its excellent spectral sensitizing effect and durability. As the metal complex, copper phthalocyanine, metal phthalocyanine such as titanyl phthalocyanine, chlorophyll, hemin, and ruthenium, osmium, iron, and zinc complexes described in JP-A-1-220380 and JP-A-5-504033 may be used. it can. As the organic dye, metal free phthalocyanine, cyanine dye, merocyanine dye, xanthene dye, and triphenylmethane dye can be used. Specific examples of the cyanine-based dye include NK1194 and NK3422 (both manufactured by Japan Photographic Dye Laboratories). Specific examples of the merocyanine dye include NK2426 and NK2501 (both manufactured by Japan Photographic Dye Laboratories). Specific examples of xanthene dyes include uranine, eosin, rose bengal, rhodamine B, and dibromofluorescein. Specific examples of the triphenylmethane dye include malachite green and crystal violet.
[0007]
The liquid containing the semiconductor and the spectral sensitizing dye is heated under reflux to adsorb the spectral sensitizing dye on the semiconductor surface. Any liquid may be used as long as it dissolves the spectral sensitizing dye to be used, and specifically, water, alcohol, toluene, and dimethylformamide can be used. The liquid is made to contain a semiconductor and a spectral sensitizing dye, and then heated to a temperature range of (boiling point −10 ° C.) to boiling point, preferably (boiling point −5 ° C.) to boiling point of the liquid. Hold the temperature. The heating and refluxing time can be appropriately set, but is suitably about 5 minutes to 48 hours. The contents of the semiconductor and the spectral sensitizing dye can be appropriately set according to the application. Thus, the semiconductor for a photoelectric conversion material of the present invention is obtained. If necessary, the semiconductor for a photoelectric conversion material of the present invention may be separated from the heated and refluxed liquid, dried, or fired.
[0008]
When the semiconductor for a photoelectric conversion material of the present invention is in the form of particles, the semiconductor for a photoelectric conversion material is applied or sprayed on a conductive support to form a film of the semiconductor for a photoelectric conversion material on the conductive support. Therefore, it is preferable to use it as a photoelectric conversion material. Further, when the semiconductor for a photoelectric conversion material of the present invention is in the form of a film and is not held on a conductive support, the semiconductor for a photoelectric conversion material is attached to the conductive support to form a photoelectric conversion material. Good to use.
[0009]
The semiconductor for a photoelectric conversion material of the present invention can be used for a solar cell. That is, a film of a semiconductor for a photoelectric conversion material is formed on a support such as a glass plate coated with a transparent conductive film and used as an electrode, and then a glass plate or the like coated with another transparent conductive film is used as a counter electrode. A solar cell can be obtained by providing a support and filling an electrolyte between these electrodes. When the spectral sensitizing dye adsorbed on the semiconductor for a photoelectric conversion material of the present invention is irradiated with sunlight, the spectral sensitizing dye absorbs and excites light in the visible region. The electrons generated by this excitation move to the semiconductor and then to the counter electrode through the transparent conductive glass electrode. The electrons transferred to the counter electrode reduce the redox system in the electrolyte. On the other hand, the spectral sensitizing dye that has transferred electrons to the semiconductor is in an oxidized state, which is reduced by a redox system in the electrolyte and returns to the original state. In this way, electrons flow and a solar cell using the semiconductor for a photoelectric conversion material of the present invention can be formed.
[0010]
【Example】
The present invention will be described with reference to the following examples, but the present invention is not limited to these examples.
[0011]
Example 1
1. Preparation of Semiconductor One liter of an 80 g / l titanyl sulfate solution was heated to 85 ° C., kept at this temperature for 3 hours, and hydrolyzed titanyl sulfate to obtain titanium oxide fine particles. Thus filtered titanium oxide fine particles obtained by, after washing, were dispersed in water to obtain a suspension of 200 g / l with TiO 2 basis. Next, an aqueous nitric acid solution was added to the suspension to adjust the pH of the suspension to 1.0, and the suspension was placed in an autoclave and subjected to hydrothermal treatment at a temperature of 180 ° C. for 13 hours under a saturated vapor pressure. Next, to this suspension was added 40% by weight of polyethylene glycol (average molecular weight: 20,000) based on TiO 2 in the suspension, and after heating to a temperature of 60 ° C., tin oxide doped with fluorine was added. The film was applied to the coated transparent conductive glass plate, dried naturally, and subsequently baked at a temperature of 600 ° C. for 30 minutes to form a film-like titanium oxide on the support.
[0012]
2. Adsorption cis spectral sensitizing dyes - (SCN -) 2 - bis (2,2'-bipyridyl-4,4'-dicarboxylate) ruthenium (II) spectral sensitizing dye represented by dissolved in ethanol solution . The concentration of this spectral sensitizing dye was 3 × 10 −4 mol / l. Next, the above-mentioned support on which the film-like titanium oxide was formed was put into this ethanol liquid, heated, and heated and refluxed at the boiling point for 15 minutes to obtain the semiconductor for a photoelectric conversion material of the present invention (sample A). ) Got. The adsorption amount of the spectral sensitizing dye of Sample A was 61 μg per 1 cm 2 of the specific surface area of the titanium oxide film.
[0013]
3. Preparation of Photoelectric Conversion Material The above sample A was provided as one electrode, and a transparent conductive glass plate coated with fluorine-doped tin oxide and further supporting platinum thereon was used as a counter electrode. An electrolyte was placed between the two electrodes, and the side face was sealed with a resin. Then, a lead wire was attached to the photoelectric conversion material of the present invention (sample B). The electrolyte was prepared by mixing tetrapropylammonium iodide and iodine in a mixed solvent of acetonitrile / ethylene carbonate having a volume ratio of 1: 4 at a concentration of 0.46 mol / l and 0.06 mol / l, respectively. 1 was used.
When the sample B was irradiated with light having an intensity of 100 W / m 2 using a solar simulator, Voc (voltage in an open circuit state) was 0.62 V, and Joc (the density of current flowing when the circuit was short-circuited) was 1.22 mA / cm 2 , FF (fill factor) was 0.70, and η (conversion efficiency) was 5.3%, which proved to be useful as a solar cell.
[0014]
Comparative Example 1
2. of the first embodiment. In cis - (SCN -) 2 - bis (2,2'-bipyridyl-4,4'-dicarboxylate) ethanol solution prepared by dissolving the spectral sensitizing dye represented by ruthenium (II), at room temperature, 2. The procedure of Example 1 was repeated except that the above-mentioned support having the film-like titanium oxide formed thereon was put therein and held for 15 minutes. In the same manner as described above, a semiconductor for a photoelectric conversion material (sample C) was obtained. The adsorption amount of the spectral sensitizing dye of Sample C was 10 μg per 1 cm 2 of the specific surface area of the titanium oxide film.
[0015]
Comparative Example 2
2. of the first embodiment. In cis - (SCN -) 2 - bis (2,2'-bipyridyl-4,4'-dicarboxylate) ethanol solution prepared by dissolving the spectral sensitizing dye represented by ruthenium (II), at room temperature, 2. The procedure of Example 1 was repeated except that the above-mentioned support on which the film-like titanium oxide was formed was put in and held for 16 hours. In the same manner as described above, a semiconductor for a photoelectric conversion material (sample D) was obtained. The adsorption amount of the spectral sensitizing dye of Sample D was 65 μg per 1 cm 2 of the specific surface area of the titanium oxide film.
2. of Embodiment 1 In Example 1, except that the above-mentioned sample D was used. And a photoelectric conversion material (sample E) was obtained. When the sample E was irradiated with light having an intensity of 100 W / m 2 by a solar simulator, Voc (voltage in an open circuit state) was 0.57 V, and Joc (the density of current flowing when the circuit was short-circuited) was 1.09 mA / cm 2 , FF (fill factor) was 0.68, and η (conversion efficiency) was 4.3%.
[0016]
As is clear from the above Examples and Comparative Examples, when a liquid containing a semiconductor and a spectral sensitizing dye is heated and refluxed to adsorb the spectral sensitizing dye on the semiconductor surface, the spectral sensitizing dye becomes strongly Thus, a semiconductor for a photoelectric conversion material having excellent photoelectric conversion efficiency was obtained.
[0017]
【The invention's effect】
The present invention is a semiconductor for a photoelectric conversion material obtained by heating and refluxing a liquid containing a semiconductor and a spectral sensitizing dye, and adsorbing the spectral sensitizing dye on the semiconductor surface, and has excellent photoelectric conversion efficiency. Therefore, it is useful for various photoelectric conversion materials.
Further, the present invention is a solar cell using the semiconductor for a photoelectric conversion material, which is inexpensive and has excellent photoelectric conversion efficiency.
Claims (5)
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| JP06806494A JP3579078B2 (en) | 1994-03-11 | 1994-03-11 | Semiconductors for photoelectric conversion materials |
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| JP06806494A JP3579078B2 (en) | 1994-03-11 | 1994-03-11 | Semiconductors for photoelectric conversion materials |
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| JP3579078B2 true JP3579078B2 (en) | 2004-10-20 |
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