JP3578777B2 - Method of manufacturing magnetoresistive head - Google Patents
Method of manufacturing magnetoresistive head Download PDFInfo
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- JP3578777B2 JP3578777B2 JP33694792A JP33694792A JP3578777B2 JP 3578777 B2 JP3578777 B2 JP 3578777B2 JP 33694792 A JP33694792 A JP 33694792A JP 33694792 A JP33694792 A JP 33694792A JP 3578777 B2 JP3578777 B2 JP 3578777B2
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- protective layer
- layer
- ion milling
- magnetic
- lead conductor
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Description
【０００１】
【産業上の利用分野】
本発明は、各種コンピュータの外部記憶装置の磁気ディスク装置あるいは磁気テープ装置に広く使用される再生専用の磁気抵抗効果型ヘッドに関する。
【０００２】
磁気抵抗効果型ヘッドは再生出力が記録媒体の移動速度に依存せずに高出力がえられ、一般に用いられているインダクティブ型の記録・再生用磁気ヘッドに比べて狭トラックの情報再生に有利であることから、高密度記録化における再生専用ヘッドとして使用され、その磁気抵抗効果型ヘッドの性能および信頼性をより向上することが必要とされている。
【０００３】
【従来の技術】
従来広く使用されている磁気ディスク装置等の磁気抵抗効果型ヘッドは、図３に示すように例えばＮｉ−Ｚｎフェライト等からなる磁性体の一方のシールド１内部に、Ａｌ２ Ｏ３ よりなる非磁性のギヤップ層２を形成して、この上にＮｉ−Ｆｅ等の薄膜からなる磁気抵抗効果素子（以下ＭＲ素子と略称する）３を配設し、このＭＲ素子３の中央部でそれぞれの端面が微小間隔で対向するようにＡｕ，ＣｕあるいはＡｌからなる引出し導体層４−１，４−２ が施されている。
【０００４】
この引出し導体層４−１，４−２ の上部に配する非磁性のギヤップ層５との密着性を向上させるために、導体層４−１，４− ２の上面をイオンミーリング等によって面を清掃し、上記ギヤップ層２と同一材質のギヤップ層５を形成して、上記一方のシールド１と同一材質の他方のシールド６によりシールドされて磁気抵抗効果型のヘッドが構成されている。
【０００５】
そして、移動する磁気記録媒体上に所定間隔をもって磁気抵抗効果型ヘッドを浮上配置し、上記引出し導体層４−１，４−２ からＭＲ素子３にセンス電流を供給することによって発生する磁界により一方の前記シールド１が磁化され、この磁化によりＭＲ素子３にバイアス磁界が印加される。
【０００６】
このような状態のＭＲ素子３の前記一対の引出し導体層４−１，４−２ によって画定された長方形の信号検出領域において、検出された前記磁気記録媒体からの信号磁界の変化に応じて生じる抵抗値の変化を、前記一対の引出し導体層４−１，４−２ より電圧の変化として取り出すことにより再生が行われている。
【０００７】
【発明が解決しようとする課題】
以上説明した従来のヘッドアッセンブリで問題となるのは、引出し導体層４−１，４−２ の上部に施されるギヤップ層５との密着性を向上させるために、当該引出し導体層４−１，４−２ の上面をイオンミーリング等によって面を清浄化しているが、この引出し導体層４−１，４−２ は、図４に示すように端面がＭＲ素子３の中央部において微小間隔で対向しているから、当該ＭＲ素子３のコア部分が前記微小間隔だけ露出して、イオンミーリング等により溝状に削り取られ、この段差により磁壁ができやすくなってバルクハウゼンノイズを誘発し易くなるという問題が生じている。
【０００８】
本発明は上記のような問題点に鑑み、ＭＲ素子３のコア部分に段差が発生しない構成にしてバルクハウゼンノイズの発生を防止することができる磁気抵抗効果型ヘッドの提供を目的とする。
【０００９】
【課題を解決するための手段】
本発明は、図１に示すように磁性体の一方のシールド１と薄膜のＭＲ素子３の間に非磁性のギヤップ層２を形成して、当該ＭＲ素子３の引出し導体層４−１，４−２ 側の面に、非磁性で且つ優れた導電性を有する保護層１１をイオンミーリング量以上１００Å以下の厚みに形成し、中央部に微小間隔で端面が対向するように引出し導体層４−１，４−２ を施した後に、この引出し導体層４−１，４−２ の上面をイオンミーリングにより面を清浄化し、当該イオンミーリング側と磁性体の他方のシールド６の間に非磁性のギヤップ層５を形成する。
【００１０】
【作用】
本発明では、図１に示すようにＭＲ素子３の引出し導体層４−１，４−２ 側の面に、非磁性で且つ優れた導電性を有する保護層１１をイオンミーリング量以上１００Å以下の厚みに形成して、その保護層１１の上に上記ＭＲ素子３の中央部で端面が微小間隔で対向するよう引出し導体層４−１，４−２ を施しているから、当該引出し導体層４−１，４−２ の上面をイオンミーリング等によって面を清浄化しても、図２に示すように該導体層４−１，４−２ の端面間より露出した保護層１１が削られて溝ができるが、上記ＭＲ素子３のコア部分には溝による段差が発生しないので、当該ＭＲ素子３の段差による磁壁がなくなってバルクハウゼンノイズの発生を防止することが可能となる。
【００１１】
【実施例】
以下図１および図２について本発明の実施例を詳細に説明する。
図１は一実施例による磁気抵抗効果型ヘッドを示す要部斜視図、図２は作用の要部断面図を示し、図中において、図３と同一部材には同一記号が付してある。
【００１２】
本発明の磁気抵抗効果型ヘッドは、図１に示すように例えばＮｉ−Ｚｎフェライト等からなる磁性体の一方のシールド１の上部に、Ａｌ２ Ｏ２ よりなる非磁性のギヤップ層２を形成して、この上にＮｉ−Ｆｅ等の薄膜からなるＭＲ素子３を従来と同様に配設する。
【００１３】
このＭＲ素子３の引出し導体層４−１，４−２ を形成する面にスパッタまたは蒸着等により、例えば非磁性且つ優れた導電性を有する， 例えばＴｉあるいはＴａからなる保護層１１、または前記ＭＲ素子３よりも小さなＭＲ効果を有する導電性磁性膜， 例えばＮｉＦｅＣｒからなる保護層１１を、後工程のイオンミーリングで削り取られて生じる段差より厚く， 且つ１００Å以下の膜厚に施して、その保護層１１上面にＡｕ，ＣｕあるいはＡｌからなる引出し導体層４−１，４−２ を、当該保護層１１の中央部でそれぞれの端面が微小間隔で対向するように形成する。
【００１４】
そして、従来と同様に、この引出し導体層４−１，４−２ の上面をイオンミーリング等によって面を清浄化し、上記ギヤップ層２と同一材質のギヤップ層５を形成するとともに、一方の上記シールド１と同一材質の他方のシールド６により磁気抵抗効果型のヘッドを構成する。
【００１５】
その結果、ＭＲ素子３のコア部分には溝による段差が発生しないので、当該ＭＲ素子３の段差による磁壁がなくなってバルクハウゼンノイズの発生を防止することができ、磁気抵抗効果型ヘッドの信頼性を向上させることができる。
【００１６】
【発明の効果】
以上の説明から明らかなように本発明によれば極めて簡単な構成で、磁気抵抗効果型素子のコア部分には溝による段差がないのでバルクハウゼンノイズの発生を防止できて、磁気抵抗効果型ヘッドの信頼性を向上させることができる等の利点があり、著しい経済的及び、信頼性向上の効果が期待できる磁気抵抗効果型ヘッドの製造方法を提供することができる。
【図面の簡単な説明】
【図１】本発明の一実施例による磁気抵抗効果型ヘッドを示す要部斜視図である。
【図２】作用を示す要部断面図である。
【図３】従来の磁気抵抗効果型ヘッドを示す要部概略斜視図である。
【図４】従来の問題点を説明するための断面図である。
【符号の説明】
１，６はシールド、
２，５はギヤップ層、
３はＭＲ素子、
４−１，４−２ は引出し導体層、
１１は保護層、[0001]
[Industrial applications]
The present invention relates to a read-only magnetoresistive head widely used for a magnetic disk device or a magnetic tape device of an external storage device of various computers.
[0002]
The magneto-resistive head has a high reproduction output without depending on the moving speed of the recording medium, and is advantageous for reproducing information on a narrow track as compared with a commonly used inductive type recording / reproducing magnetic head. For this reason, it is used as a read-only head in high-density recording, and it is necessary to further improve the performance and reliability of the magnetoresistive head.
[0003]
[Prior art]
As shown in FIG. 3, a magnetoresistive head of a magnetic disk device or the like which has been widely used in the past has a magnetic material made of, for example, Ni—Zn ferrite and a nonmagnetic material made of Al 2 O 3 inside one shield 1. Is formed, and a magnetoresistive effect element (hereinafter abbreviated as MR element) 3 made of a thin film of Ni—Fe or the like is provided thereon, and each end face is formed at the center of the MR element 3. Leading conductor layers 4-1 and 4-2 made of Au, Cu or Al are provided so as to face each other at a minute interval.
[0004]
In order to improve the adhesion between the Giyappu layer 5 of non-magnetic disposed on top of the conductive lead layers 4-1 and 4-2, the conductive layer 4-1, the surface of the upper surface of the 4-2 by ion milling or the like After cleaning, a gap layer 5 of the same material as the gap layer 2 is formed and shielded by the other shield 6 of the same material as the one shield 1 to form a magnetoresistive head.
[0005]
Then, a magnetoresistive head is levitated at a predetermined interval on the moving magnetic recording medium, and a magnetic field generated by supplying a sense current to the MR element 3 from the lead conductor layers 4-1 and 4-2 is used. The shield 1 is magnetized, and a bias magnetic field is applied to the MR element 3 by the magnetization.
[0006]
In the rectangular signal detection area defined by the pair of extraction conductor layers 4-1 and 4-2 of the MR element 3 in such a state, the signal is generated in accordance with the detected change in the signal magnetic field from the magnetic recording medium. Reproduction is performed by extracting a change in resistance value as a change in voltage from the pair of lead conductor layers 4-1 and 4-2.
[0007]
[Problems to be solved by the invention]
The problem with the conventional head assembly described above is that, in order to improve the adhesion with the gap layer 5 provided on the lead conductor layers 4-1 and 4-2, the lead conductor layer 4-1 has a problem. , 4-2 are cleaned by ion milling or the like. However, the end surfaces of the lead conductor layers 4-1 and 4-2 are arranged at minute intervals at the center of the MR element 3 as shown in FIG. Since they are opposed to each other, the core portion of the MR element 3 is exposed only at the minute interval and is cut into a groove shape by ion milling or the like. This step makes it easy to form a magnetic domain wall and easily induce Barkhausen noise. There is a problem.
[0008]
The present invention has been made in view of the above-described problems, and has as its object to provide a magnetoresistive head capable of preventing occurrence of Barkhausen noise by using a configuration in which a step does not occur in a core portion of an MR element 3.
[0009]
[Means for Solving the Problems]
In the present invention, as shown in FIG. 1, a non-magnetic gap layer 2 is formed between one shield 1 of a magnetic material and a thin-film MR element 3, and the lead conductor layers 4-1 and 4 of the MR element 3 are formed. A protective layer 11 having a non-magnetic and excellent conductivity is formed on the surface on the -2 side in a thickness of not less than the amount of ion milling and not more than 100 °, and the lead conductor layer 4 is formed so that the end faces thereof are opposed to each other at a minute interval at the center. After applying 1,4-2, the upper surfaces of the lead conductor layers 4-1 and 4-2 are cleaned by ion milling, and a non-magnetic material is provided between the ion milling side and the other shield 6 of the magnetic material. A gap layer 5 is formed.
[0010]
[Action]
In the present invention, as shown in FIG. 1, a protective layer 11 which is nonmagnetic and has excellent conductivity is provided on the surface of the MR element 3 on the side of the lead conductor layers 4-1 and 4-2 with an ion milling amount of not more than 100 °. Since the lead conductor layers 4-1 and 4-2 are formed on the protective layer 11 so that the end faces thereof face each other at a small interval at the center of the MR element 3, the lead conductor layers 4 and 4 are provided. Even if the upper surfaces of the first and second 4-2 are cleaned by ion milling or the like, as shown in FIG. 2, the protection layer 11 exposed from between the end surfaces of the conductor layers 4-1 and 4-2 is cut off to form grooves. However, since a step due to the groove does not occur in the core portion of the MR element 3, the domain wall due to the step of the MR element 3 disappears, and it is possible to prevent the occurrence of Barkhausen noise.
[0011]
【Example】
Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS.
FIG. 1 is a perspective view of a principal part showing a magnetoresistive head according to an embodiment, and FIG. 2 is a sectional view of a principal part of the operation. In the drawing, the same members as those in FIG.
[0012]
Magnetoresistive head of the present invention, one of the top shield 1 of the magnetic body so made of, for example, Ni-Zn ferrite or the like as shown in FIG. 1, to form a non-magnetic Giyappu layer 2 made of Al 2 O 2 Then, an MR element 3 made of a thin film of Ni-Fe or the like is disposed thereon in the same manner as in the prior art.
[0013]
The protective layer 11 made of, for example, Ti or Ta, which is nonmagnetic and has excellent conductivity, is formed on the surface of the MR element 3 on which the lead conductor layers 4-1 and 4-2 are formed by sputtering or vapor deposition. A conductive magnetic film having an MR effect smaller than that of the element 3, for example, a protective layer 11 made of NiFeCr is applied to a thickness greater than a step formed by ion milling in a later step and less than 100 ° to form the protective layer. Leading conductor layers 4-1 and 4-2 made of Au, Cu or Al are formed on the upper surface of the protective layer 11 such that their end faces face each other at a small interval at the center of the protective layer 11.
[0014]
Then, as in the prior art, the upper surfaces of the lead conductor layers 4-1 and 4-2 are cleaned by ion milling or the like to form a gap layer 5 of the same material as the gap layer 2 and one of the shield layers. The other shield 6 made of the same material as 1 forms a magnetoresistive head.
[0015]
As a result, a step due to the groove does not occur in the core portion of the MR element 3, so that a domain wall due to the step of the MR element 3 is eliminated, and Barkhausen noise can be prevented from occurring. Can be improved.
[0016]
【The invention's effect】
As is apparent from the above description, according to the present invention, since the core portion of the magnetoresistive element has no step due to the groove, the occurrence of Barkhausen noise can be prevented, and the magnetoresistive effect head can be prevented. It is possible to provide a method of manufacturing a magnetoresistive head in which the reliability can be improved.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a main part of a magnetoresistive head according to an embodiment of the present invention.
FIG. 2 is a sectional view of a main part showing an operation.
FIG. 3 is a schematic perspective view showing a main part of a conventional magnetoresistive head.
FIG. 4 is a cross-sectional view for explaining a conventional problem.
[Explanation of symbols]
1, 6 are shields,
2 and 5 are gear layers,
3 is an MR element,
4-1 and 4-2 are lead conductor layers,
11 is a protective layer,
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33694792A JP3578777B2 (en) | 1992-12-17 | 1992-12-17 | Method of manufacturing magnetoresistive head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33694792A JP3578777B2 (en) | 1992-12-17 | 1992-12-17 | Method of manufacturing magnetoresistive head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06187618A JPH06187618A (en) | 1994-07-08 |
| JP3578777B2 true JP3578777B2 (en) | 2004-10-20 |
Family
ID=18304095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33694792A Expired - Fee Related JP3578777B2 (en) | 1992-12-17 | 1992-12-17 | Method of manufacturing magnetoresistive head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3578777B2 (en) |
-
1992
- 1992-12-17 JP JP33694792A patent/JP3578777B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06187618A (en) | 1994-07-08 |
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