JP3555558B2 - Etching method and apparatus - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a dry etching method and apparatus used for manufacturing electronic devices such as semiconductors and micromachines, and more particularly to a method and apparatus for etching a noble metal or a substance containing a noble metal.
[0002]
[Prior art]
Conventionally, in semiconductor memories (storage devices), the capacity of memory capacitors has been increased by changing the structure of the memory capacitor, but in recent years, the required capacity has been secured only by changing the structure in miniaturization. It became difficult to do. For this reason, ceramic oxides having a high dielectric constant, such as barium strontium titanate, lead zirconium titanate, and bismuth strontium tantalate, have been used as capacitor capacitance materials. If oxygen is desorbed from these ceramic oxides, their properties will be greatly deteriorated. Therefore, as a capacitor electrode material, a material having a low reaction with oxygen, for example, a noble metal such as ruthenium, platinum, iridium, rhodium, or gold. And compounds or alloys containing these noble metals are used. In order to form a fine pattern using these materials, an etching technique for these materials is required.
[0003]
Hereinafter, dry etching of iridium using an inductively coupled plasma source will be described with reference to FIG. 6 as an example of a conventional etching method. In FIG. 6, while introducing a predetermined gas from a gas supply device 2 into a vacuum container 1, the pump 3 as an exhaust device is evacuated, and a high-frequency power supply for a coil is maintained while maintaining a predetermined pressure in the vacuum container 1. By supplying a high frequency power of 13.56 MHz to the coil 19 by the method 4, a plasma is generated in the vacuum vessel 1 and the substrate 7 placed on the substrate electrode 6 can be etched. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided so that ion energy reaching the substrate 7 can be controlled. The coil 19 is arranged on the dielectric window 20. Typical etching conditions for etching iridium are argon / chlorine = 260/20 sccm, pressure = 0.3 Pa, coil power = 1500 W, electrode power = 400 W.
[0004]
[Problems to be solved by the invention]
However, in the etching of iridium using the inductively coupled plasma, the reaction between chlorine and the iridium thin film is not sufficiently performed, and the iridium on the substrate 7 or the substrate 7 is sputtered and adheres again on the dielectric window 20 as a conductive thin film. . The conductive thin film makes it difficult for the electromagnetic wave from the coil 19 to propagate into the vacuum vessel 1, and the plasma density decreases and the iridium etching rate decreases as processing is repeated. In our experiments, it was found that the etching rate was reduced by about 15% when eight substrates with a 200 nm-thick iridium film were etched.
[0005]
An object of the present invention is to provide a method and an apparatus for stably etching a noble metal or a substance containing a noble metal by suppressing adhesion of a conductive thin film in view of the above conventional problems.
[0006]
[Means for Solving the Problems]
The etching method of the first invention of the present application comprises:Evacuation is performed while supplying gas into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Thereby generating plasma in the vacuum vessel and processing the substrate on the substrate electrode, wherein the surface of the antenna on the substrate electrode side and side surfaces thereof are covered with silicon nitride or aluminum nitride. Etching the noble metal or a substance containing a noble metal while the nitride is further covered with resin or quartz glassFeatures.
[0007]
Also,The etching method of the second invention of the present application comprises:Evacuation is performed while supplying gas into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Thereby generating a plasma in the vacuum vessel and processing the substrate on the substrate electrode, wherein the antenna has a surface on the substrate electrode side and a side surface thereof covered with ceramic, Etching precious metals or substances containing precious metals while still covered with polyimide resin or quartz glassIt is characterized by.
[0008]
Further, the etching method of the third invention of the present application is provided so as to face a substrate electrode in the vacuum vessel while exhausting while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure. Applying an RF power having a frequency of 50 MHz to 3 GHz to the antenna to generate plasma in the vacuum vessel and process the substrate on the substrate electrode, wherein the etching is performed between the antenna and the vacuum vessel. A dielectric plate is sandwiched between the antenna and the antenna. The dielectric plate has a structure protruding into the vacuum vessel, and the surface and the side surface of the antenna on the substrate electrode side are covered with ceramic, and the ceramic contains a noble metal or a noble metal in a state covered with resin or quartz glass. The method is characterized by etching a substance.
[0009]
Furthermore,Of the present applicationFourth inventionThe etching equipment ofA vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, a substrate electrode in the vacuum container and on which a substrate is mounted, and provided facing the substrate electrode. An etching apparatus provided with a specified antenna and a high-frequency power supply for supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, wherein a dielectric is provided between the antenna and the vacuum vessel, and The surface and side surfaces on the substrate electrode side are covered with silicon nitride or aluminum nitride, and the silicon nitride or aluminum nitride is further covered with polyimide resin or quartz glass, and any one of iridium, ruthenium, platinum, rhodium and gold is applied. Etching material containingIt is characterized by.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
[0011]
FIG. 1 shows a sectional view of an etching apparatus used in the first embodiment of the present invention. In FIG. 1, while introducing a predetermined gas from a gas supply device 2 into a vacuum container 1, the pump 3 as an exhaust device is evacuated, and while maintaining the inside of the vacuum container 1 at a predetermined pressure, a high frequency power supply for an antenna is used. By supplying high-frequency power of 100 MHz to the antenna 5 protruding into the vacuum vessel 1 by means of 4, plasma is generated in the vacuum vessel 1 and the substrate 7 mounted on the substrate electrode 6 is etched. Processing can be performed. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided so that ion energy reaching the substrate 7 can be controlled. The high-frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of portions different from the center and the periphery of the antenna 5 and the surface 1 ′ of the vacuum vessel 1 facing the substrate 7 are short-circuited by the short pins 10. A dielectric plate 11 is sandwiched between the antenna 5 and the vacuum vessel 1, and the feeder rod 9 and the short pin 10 are respectively connected to the antenna 5, the antenna high-frequency power supply 4, and the antenna 5 through through holes provided in the dielectric plate 11. And the vacuum vessel 1 '. The surface of the antenna 5 is covered with a polyimide resin cover 12. Further, a groove-shaped space between the dielectric plate 11 and a dielectric ring 13 provided around the dielectric plate 11 and a groove between the antenna 5 and a conductor ring 14 provided around the antenna 5 are provided. There is provided a plasma trap 15 composed of a space in the shape of a circle.
[0012]
FIG. 2 shows a plan view of the antenna 5. In FIG. 2, the short pins 10 are provided at three places, and the short pins 10 are equally arranged with respect to the center of the antenna 5.
[0013]
In the etching apparatus shown in FIGS. 1 and 2, 56 substrates with a 200 nm-thick iridium film were etched. As a result, the etch rate hardly decreased, and the uniformity of the etch rates between the surfaces was as good as ± 1.45%. there were. The etching conditions are as follows: argon / chlorine = 260/20 sccm, pressure = 0.3 Pa, antenna power = 1750 W, electrode power = 400 W.
[0014]
As described above, it is considered that the reason why the decrease in the etch rate was suppressed as compared with the conventional example is that the formation of the conductive thin film near the antenna was suppressed. When the sheet resistance of the thin film adhered to the polyimide resin cover 12 was actually measured after completion of the etching, an infinite resistance value was obtained, and it was confirmed that the insulating thin film was adhered. There are two possible causes.
[0015]
One is that in the present embodiment, a VHF band excited plasma source is used, which can obtain a plasma having a lower electron temperature than an inductively coupled plasma source. Is suppressed, and iridium is separated from the substrate 7 as a reaction product such as chloride. This phenomenon is due to the fact that negative ions have higher reactivity than positive ions.
[0016]
As a second cause, it is conceivable that by covering the surface of the antenna with the polyimide resin cover 12, the probability of adsorption of reaction products on the surface of the resin cover 12 could be reduced. For comparison, a similar experiment was performed using a silicon nitride cover instead of the resin cover 12, and a conductive thin film adhered to the silicon nitride cover, and the change over time (decrease in rate) of the etch rate was observed. Was seen. Although the detailed mechanism is not clear yet, in our experiments, when resin or glass was used as the cover material, insulating deposits were observed, and when silicon nitride, aluminum nitride, aluminum oxide, or metal was used as the cover material. Showed conductive deposits.
[0017]
In the conventional inductively coupled plasma source, when the surface of the dielectric window 15 was covered with a resin cover, conductive deposits were observed. Therefore, the first factor, that is, the low electron temperature plasma source was used. Utilization of negative ions of chlorine is considered to be indispensable for suppressing conductive deposits.
[0018]
In the above-described first embodiment of the present invention, only a part of various variations regarding the shape of the vacuum vessel, the shape and the arrangement of the antenna, etc. in the applicable range of the present invention are exemplified. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.
[0019]
Further, in the first embodiment of the present invention described above, the case where the material of the resin cover is a polyimide resin has been described, but it is expected that the same effect can be obtained even if another resin is used. However, the polyimide resin is characterized in that it has few impurities among resins and has excellent heat resistance.
[0020]
Further, in the first embodiment of the present invention described above, a high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and provided at a part different from the center and the periphery of the dielectric plate, In addition, the case has been described where the antenna and the vacuum vessel are short-circuited by the short pin through the through-hole that is disposed substantially equally to the center of the antenna. Can be further enhanced. Needless to say, when the substrate is small, sufficiently high in-plane uniformity can be obtained without using short pins.
[0021]
Further, in the first embodiment of the present invention described above, a case where etching is performed in a state where plasma distribution on a substrate is controlled by an annular and groove-shaped plasma trap provided between an antenna and a vacuum vessel. As described above, such a configuration can further improve the uniformity of plasma. Needless to say, when the substrate is small, a sufficiently high in-plane uniformity can be obtained without using a plasma trap.
[0022]
Further, in the first embodiment of the present invention described above, the case where the high-frequency power of 100 MHz is supplied to the antenna has been described. However, the frequency is not limited to this, and the etching method using the frequency of 50 MHz to 3 GHz and In the device, the present invention is effective.
[0023]
Next, a second embodiment of the present invention will be described with reference to FIG.
[0024]
FIG. 3 shows a sectional view of an etching apparatus used in the second embodiment of the present invention. In FIG. 3, while introducing a predetermined gas from a gas supply device 2 into a vacuum vessel 1, the pump 3 serving as an exhaust device is evacuated, and while maintaining a predetermined pressure inside the vacuum vessel 1, a high frequency power supply for an antenna is used. By supplying high-frequency power of 100 MHz to the antenna 5 protruding into the vacuum vessel 1 by means of 4, plasma is generated in the vacuum vessel 1 and the substrate 7 mounted on the substrate electrode 6 is etched. Processing can be performed. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided so that ion energy reaching the substrate 7 can be controlled. The high-frequency voltage supplied to the antenna 5 is supplied to the vicinity of the center of the antenna 5 by the power supply rod 9. Further, a plurality of portions different from the center and the periphery of the antenna 5 and the surface 1 ′ of the vacuum vessel 1 facing the substrate 7 are short-circuited by the short pins 10. A dielectric plate 11 is sandwiched between the antenna 5 and the vacuum vessel 1, and the feeder rod 9 and the short pin 10 are respectively connected to the antenna 5, the antenna high-frequency power supply 4, and the antenna 5 through through holes provided in the dielectric plate 11. And the vacuum vessel 1 '. The surface of the antenna 5 is covered with a silicon nitride cover 16, and the silicon nitride cover 16 is further covered with a plate-shaped first quartz glass cover 17 and a cylindrical second quartz glass cover 18. Has been done. Further, a groove-shaped space between the dielectric plate 11 and a dielectric ring 13 provided around the dielectric plate 11 and a groove between the antenna 5 and a conductor ring 14 provided around the antenna 5 are provided. There is provided a plasma trap 15 composed of a space in the shape of a circle. Since the plan view of the antenna 5 is the same as that of FIG. 2, the description is omitted here.
[0025]
In the etching apparatus shown in FIG. 3, when 40 substrates with a 200 nm-thick iridium film were etched, the etch rate hardly decreased, and the uniformity of the etch rates between the surfaces was as good as ± 1.21%. The etching conditions are as follows: argon / chlorine = 260/20 sccm, pressure = 0.3 Pa, antenna power = 1750 W, electrode power = 400 W.
[0026]
The reason why the decrease in the etch rate was able to be suppressed as compared with the conventional example is considered to be the same as that described in the first embodiment of the present invention. However, in the second embodiment of the present invention, the cover for covering the antenna 5 is further devised. That is, simply covering the antenna 5 with a quartz glass cover to prevent conductive deposits may cause the quartz glass cover to break due to thermal shock or the like due to insufficient strength of the quartz glass. For this reason, the cover is divided into a plate-shaped first quartz glass cover 17 and a cylindrical second quartz glass cover 18. On the other hand, if the cover is simply divided, the substrate of the harmful contaminant contained in the antenna 5 and the dielectric plate 11 is formed from the seam between the plate-shaped first quartz glass cover 17 and the cylindrical second quartz glass cover 18. 7 is inevitable. To prevent this, the antenna 5 is covered with a silicon nitride cover 16. By providing a double cover in this manner, an etching method and an apparatus capable of preventing the cover from cracking easily, free from contamination, and preventing conductive deposits have been made possible.
[0027]
In the above-described second embodiment of the present invention, only a part of various variations regarding the shape of the vacuum vessel, the shape and arrangement of the antenna, etc. in the applicable range of the present invention are illustrated. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.
[0028]
Further, in the above-described second embodiment of the present invention, the case where the material of the ceramic cover is silicon nitride has been described, but the material of the ceramic cover may be aluminum nitride. These materials are characterized by high mechanical strength and excellent corrosion resistance.
[0029]
Further, in the above-described second embodiment of the present invention, the case where the quartz glass cover is used has been described, but a resin cover may be used instead of the quartz glass cover. As the resin cover, a polyimide resin or the like can be used. Polyimide resin is characterized by having few impurities among resins and excellent heat resistance.
[0030]
Further, in the above-described second embodiment of the present invention, a high-frequency voltage is supplied to the antenna through a through hole provided near the center of the dielectric plate, and provided at a position different from the center and the periphery of the dielectric plate, In addition, the case has been described where the antenna and the vacuum vessel are short-circuited by the short pin through the through-hole that is disposed substantially equally to the center of the antenna. Can be further enhanced. Needless to say, when the substrate is small, sufficiently high in-plane uniformity can be obtained without using short pins.
[0031]
Further, in the above-described second embodiment of the present invention, a case where etching is performed in a state where the plasma distribution on the substrate is controlled by an annular and groove-shaped plasma trap provided between the antenna and the vacuum vessel. As described above, such a configuration can further improve the uniformity of plasma. Needless to say, when the substrate is small, a sufficiently high in-plane uniformity can be obtained without using a plasma trap.
[0032]
Further, in the above-described second embodiment of the present invention, a case where high-frequency power of 100 MHz is supplied to the antenna has been described. However, the frequency is not limited to this, and an etching method using a frequency of 50 MHz to 3 GHz and In the device, the present invention is effective.
[0033]
Next, a third embodiment of the present invention will be described with reference to FIG.
[0034]
FIG. 4 shows a sectional view of an etching apparatus used in the third embodiment of the present invention. In FIG. 4, while introducing a predetermined gas from a gas supply device 2 into a vacuum vessel 1, exhaust is performed by a pump 3 as an exhaust device, and a high-frequency power supply for a coil is maintained while maintaining a predetermined pressure inside the vacuum vessel 1. By supplying a high frequency power of 13.56 MHz to the coil 19 by the method 4, a plasma is generated in the vacuum vessel 1 and the substrate 7 placed on the substrate electrode 6 can be etched. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided so that ion energy reaching the substrate 7 can be controlled. The coil 19 is arranged on the dielectric window 20. The dielectric window 20 is covered with a polyimide resin cover 12. The coil high-frequency power supply 4 is configured to be capable of pulse modulation.
[0035]
In the etching apparatus shown in FIG. 4, 50 substrates with a 200 nm-thick iridium film were etched. As a result, the etch rate hardly decreased, and the uniformity of the etch rates between the surfaces was as good as ± 2.30%. The etching conditions are as follows: argon / chlorine = 260/20 sccm, pressure = 0.3 Pa, coil power = 2500 W, electrode power = 400 W. However, the coil power was pulse-modulated with a peak value of 2500 W and an ON time / OFF time = 50 μsec / 50 μsec.
[0036]
The reason why the decrease in the etch rate was able to be suppressed as compared with the conventional example is considered to be the same as that described in the first embodiment of the present invention. That is, the power supplied to the coil 19 is pulse-modulated to reduce the electron temperature of the plasma, and the surface of the dielectric window 20 is covered with the polyimide resin cover 12 so that the polyimide resin cover 12 This is because conductive deposits could be prevented.
[0037]
In the third embodiment of the present invention described above, only a part of various variations regarding the shape of the vacuum vessel, the shape and the arrangement of the coil, etc. in the applicable range of the present invention are exemplified. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.
[0038]
Further, in the above-described third embodiment of the present invention, the case where the material of the resin cover is a polyimide resin has been described, but it is expected that the same effect can be obtained by using another resin. However, the polyimide resin is characterized in that it has few impurities among resins and has excellent heat resistance.
[0039]
Further, in the third embodiment of the present invention described above, the case where the high-frequency power of 13.56 MHz is supplied to the coil has been described, but the frequency is not limited to this, and the etching using the frequency of 100 kHz to 50 MHz is performed. The present invention is effective in a method and an apparatus.
[0040]
Further, in the above-described third embodiment of the present invention, a case has been described in which the coil power is subjected to pulse modulation of ON time / OFF time = 50 μsec / 50 μsec. However, the pulse modulation time is not limited to this. Instead, it can be selected freely within a range where the electron temperature of the plasma can be lowered.
[0041]
Next, a fourth embodiment of the present invention will be described with reference to FIG.
[0042]
FIG. 5 shows a sectional view of an etching apparatus used in the fourth embodiment of the present invention. In FIG. 5, while introducing a predetermined gas from a gas supply device 2 into a vacuum vessel 1, the pump 3 as an exhaust device is evacuated, and while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, the high frequency for cavity resonator is used. By supplying a high-frequency power of 2.45 GHz to the cavity resonator 21 from a power supply (not shown), plasma is generated in the vacuum vessel 1 and the substrate 7 placed on the substrate electrode 6 is subjected to etching. It can be carried out. Further, a high-frequency power supply 8 for the substrate electrode for supplying high-frequency power to the substrate electrode 6 is provided so that ion energy reaching the substrate 7 can be controlled. Note that the cavity resonator 21 is disposed on the dielectric window 20. The dielectric window 20 is covered with a polyimide resin cover 12.
[0043]
In the etching apparatus shown in FIG. 5, when 50 substrates with a 200 nm-thick iridium film were etched, the etch rate was hardly reduced, and the uniformity of the etch rates between the surfaces was as good as ± 1.54%. The etching conditions were as follows: argon / chlorine = 260/20 sccm, pressure = 0.3 Pa, cavity resonator power = 2000 W, electrode power = 400 W.
[0044]
The reason why the decrease in the etch rate was able to be suppressed as compared with the conventional example is considered to be the same as that described in the first embodiment of the present invention. That is, since the electron temperature of the plasma was lowered and the surface of the dielectric window 20 was covered with the cover 12 made of polyimide resin, conductive deposits on the cover 12 made of polyimide resin could be prevented.
[0045]
In the above-described fourth embodiment of the present invention, only a part of various variations regarding the shape of the vacuum vessel, the shape and the arrangement of the cavity resonator, etc. in the applicable range of the present invention are exemplified. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.
[0046]
Further, in the above-described fourth embodiment of the present invention, the case where the material of the resin cover is a polyimide resin has been described. However, it is expected that the same effect can be obtained by using another resin. However, the polyimide resin is characterized in that it has few impurities among resins and has excellent heat resistance.
[0047]
Further, in the above-described fourth embodiment of the present invention, a case has been described in which high-frequency power of 2.45 GHz is supplied to the cavity resonator. However, the frequency is not limited to this, and a frequency of 50 MHz to 3 GHz is used. The present invention is effective in the etching method and apparatus used.
[0048]
In the embodiment of the present invention described above, the case where iridium is etched has been described.However, the present invention is effective in etching noble metals such as ruthenium, platinum, iridium, rhodium, and gold, and compounds or alloys containing these noble metals. is there.
[0049]
【The invention's effect】
As is apparent from the above description, according to the etching method of the first invention of the present application,Evacuation is performed while gas is supplied into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Thereby generating a plasma in the vacuum chamber and processing the substrate on the substrate electrode, wherein the surface of the antenna on the substrate electrode side and the side surface thereof are covered with silicon nitride or aluminum nitride. Etching the noble metal or a substance containing the noble metal with the nitride further covered with resin or quartz glassTherefore, by suppressing the adhesion of the conductive thin film, the noble metal or the substance containing the noble metal can be etched stably.
[0050]
According to the etching method of the second invention of the present application,Evacuation is performed while supplying gas into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Thereby generating a plasma in the vacuum vessel and processing the substrate on the substrate electrode, wherein the antenna has a surface on the substrate electrode side and a side surface thereof covered with ceramic, Etch precious metal or a substance containing precious metal while covered with polyimide resin or quartz glassTherefore, by suppressing the adhesion of the conductive thin film, the noble metal or the substance containing the noble metal can be etched stably.
[0051]
Further, according to the etching method of the third invention of the present application,Evacuation is performed while gas is supplied into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. By generating plasma in the vacuum vessel, the etching method for processing the substrate on the substrate electrode, wherein a dielectric plate is sandwiched between the antenna and the vacuum vessel, the antenna and the The dielectric plate has a structure protruding into the vacuum vessel, and the antenna and the surface on the substrate electrode side and the side surface of the antenna are covered with ceramic, and the ceramic contains a noble metal or a noble metal in a state covered with resin or quartz glass. Etch materialTherefore, by suppressing the adhesion of the conductive thin film, the noble metal or the substance containing the noble metal can be etched stably.
[0052]
Furthermore, the present applicationFourth inventionAccording to the etching apparatus ofA vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, a substrate electrode in the vacuum container and on which a substrate is mounted, and provided facing the substrate electrode. An etching apparatus provided with a high-frequency power supply for supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, wherein there is a dielectric between the antenna and the vacuum vessel, and The surface and side surfaces on the substrate electrode side are covered with silicon nitride or aluminum nitride, and any of iridium, ruthenium, platinum, rhodium and gold is covered with the silicon nitride or aluminum nitride covered with polyimide resin or quartz glass. Etch material containingTherefore, by suppressing the adhesion of the conductive thin film, the noble metal or the substance containing the noble metal can be stably etched.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a configuration of an etching apparatus used in a first embodiment of the present invention.
FIG. 2 is a plan view of the antenna used in the first embodiment of the present invention.
FIG. 3 is a sectional view showing a configuration of an etching apparatus used in a second embodiment of the present invention.
FIG. 4 is a sectional view showing a configuration of an etching apparatus used in a third embodiment of the present invention.
FIG. 5 is a sectional view showing a configuration of an etching apparatus used in a fourth embodiment of the present invention.
FIG. 6 is a sectional view showing a configuration of an etching apparatus used in a conventional example.
[Explanation of symbols]
1 vacuum container
2 Gas supply device
3 pump
4 High frequency power supply for antenna
5 Antenna
6 Substrate electrode
7 Substrate
8 High frequency power supply for substrate electrode
9 Power supply rod
10 Short pins
11 Dielectric plate
12 Resin cover
13 Dielectric ring
14 Conductor ring
15 Plasma trap

Claims (4)

Evacuation is performed while supplying gas into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Thereby generating plasma in the vacuum vessel and processing the substrate on the substrate electrode, wherein the surface of the antenna on the substrate electrode side and side surfaces thereof are covered with silicon nitride or aluminum nitride. And etching the noble metal or a substance containing the noble metal while the nitride is further covered with a resin or quartz glass. Evacuation is performed while supplying gas into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Thereby generating a plasma in the vacuum vessel and processing the substrate on the substrate electrode, wherein the antenna has a surface on the substrate electrode side and a side surface thereof covered with ceramic, Furthermore , an etching method characterized by etching a noble metal or a substance containing a noble metal while covering with a polyimide resin or quartz glass. Evacuation is performed while supplying gas into the vacuum vessel, and high-frequency power having a frequency of 50 MHz to 3 GHz is applied to an antenna provided opposite to the substrate electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. By generating a plasma in the vacuum vessel, an etching method for processing a substrate on the substrate electrode, wherein a dielectric plate is sandwiched between the antenna and the vacuum vessel, the antenna and the The dielectric plate has a structure protruding into the vacuum vessel, and the antenna and the surface on the substrate electrode side and the side surface of the antenna are covered with ceramic, and the ceramic contains a noble metal or a noble metal in a state covered with resin or quartz glass. An etching method characterized by etching a substance. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, a substrate electrode in the vacuum container and on which a substrate is mounted, and provided facing the substrate electrode. An etching apparatus provided with a specified antenna and a high-frequency power supply for supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, wherein a dielectric is provided between the antenna and the vacuum vessel, and The surface and side surfaces on the substrate electrode side are covered with silicon nitride or aluminum nitride, and any of iridium, ruthenium, platinum, rhodium and gold is covered with the silicon nitride or aluminum nitride covered with polyimide resin or quartz glass. An etching apparatus characterized by etching a substance containing the same.

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