JP3522774B2 - Equipment for processing electronic components - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for processing electronic parts, and more specifically, in the manufacture of electronic parts such as semiconductors and liquid crystal display elements, various kinds of distribution, transportation, development, etching, etc. of silicon wafers and glass substrates. An IC tray for arranging and supplying electronic parts when automatically mounting electronic parts such as carriers, pipes, tubes, and tanks used for processing chemicals, degreasing and washing with water, on printed wiring boards and hybrid ICs, The present invention relates to carrier tapes, separation films for protecting electronic parts held by them, and the like.

[0002]

2. Description of the Related Art For highly integrated semiconductors such as ICs and LSIs, electrical insulation layers, wiring material layers, interlayer insulation layers, etc. are laminated on a silicon wafer, unnecessary layers are peeled off, adhesion improving aids, photoresists, etc. Chemical application, chemical removal / cleaning, exposure,
A fine image is printed by development and etching, and it is manufactured through complicated steps such as diffusion of impurities. For each of these steps, treatments such as application of chemicals, immersion in chemicals, heating, etc., are performed according to the respective steps. Further, a glass mask or reticle, which is a source of a fine image, is also manufactured by processing a glass substrate by a photolithography method, but the same processing is performed.

Wafers and glass substrates are normally stored in a cassette called a carrier in a fixed number of sheets and circulated, and are moved as they are between processes and processes. In each process,
Wafers and glass substrates may be subjected to branch and leaf processing, that is, one by one, but usually, in order to improve efficiency, they are often batch processed, that is, collectively processed. For example, currently, resist coating / exposure processing cannot be performed in a batch process, so branch and leaf processing is performed, and development processing is performed by both branch and leaf processing, but cleaning processing must be performed in batch processing. There are many. When performing batch processing, the processing is carried out as it is stored in the carrier.

Therefore, the semiconductor manufacturing carrier has a shape conforming to the standard of the semiconductor manufacturing apparatus, and the wafer and the glass substrate can be freely taken in and out at the time of branching and foliage treatment, and foreign matter is attached and scratches are taken in and out. No occurrence,
It is required to withstand heat treatment and chemical treatment. Since the temperature of the heat treatment varies depending on each intended treatment, the higher the heat-resistant temperature of the material of the carrier is, the more treatments the carrier can be used in, which is preferable. For example, in the case of washing with acid or alkali, there is a step of heating to 50 to 70 ° C. or higher. Therefore, as a molded product, 18.6 kgf /
The deflection temperature under load of cm ² is preferably 70 ° C or higher.

In batch processing, concentrated sulfuric acid, diluted sulfuric acid,
Acids such as nitric acid, phosphoric acid, hydrofluoric nitric acid, buffered hydrofluoric acid, hydrochloric acid; hydrogen peroxide solution; tetramethylammonium hydroxide (TMAHO) aqueous solution, choline aqueous solution, sodium hydroxide aqueous solution, potassium hydroxide aqueous solution,
An aqueous alkaline solution such as ammonia water; an organic solvent such as hexamethyldisilazane, acetone, isopropyl alcohol, ethoxyethyl acetate, cellosolves, and trichloroethylene; purified and sterilized water called ultrapure water is used. The more resistant the carrier material is to these chemicals, the more usable the carrier is, and the more preferable.

When the carrier is used, contaminants such as resist dust, dust, and foreign matter adhere to it, and it is difficult to remove them. Therefore, the carrier is appropriately renewed before use. Therefore, those having good productivity and low production cost are preferable.
In addition, adhesion of contaminants, development processing, etching processing,
It is preferably transparent so that it is easy to confirm the completion of the cleaning process.

As a material for the carrier for manufacturing a semiconductor, a metal such as brass, a fluororesin such as polypropylene (PP), polytetrafluoroethylene (PTFE) or a perfluoroalkoxy fluororesin (PFA) has been conventionally used. Among them, the metal carrier is excellent in dimensional accuracy and heat resistance, but is heavy, does not have resistance to acid, generates minute scrapes and scraps due to rubbing when taking in and out a wafer or a glass substrate, and is opaque. There's a problem. In addition, metal carriers are now rarely used because they are expensive and expensive to assemble separately machined parts.

At present, thermoplastic resin carriers are mainly used, and PP, PTFE and PFA are mainly used, but all of these resins are resistant to many of the above-mentioned chemicals for semiconductor production and absorb water. It is used for reasons such as low water resistance of about 0.02% or less and good drainage because it repels water.

PP can be mass-produced by injection molding,
It can be used as a disposable item and has a low specific gravity of about 0.9. However, in addition to being opaque, the shrinkage during injection molding is slightly large at 1.2 to 2%, and the dimensional accuracy is poor.
50-65 ° C. approximately in gf / cm ² load deflection temperature and poor heat resistance, the linear expansion coefficient is as large as 10 to 18 × 10 ^{over 5} / ° C., there is a drawback that the dimensional change due to temperature change is large. For this reason, there has been a problem that when the wafers and glass substrates are collectively transferred from the carrier, the wafers and the glass substrates may not be in their respective predetermined positions and may overlap each other.

PTFE has a high heat resistance of 200 ° C. or higher,
It is a suitable material with low sliding friction. However, since injection molding cannot be performed, a rough molded product by compression molding is machined by cutting out. Therefore, mass production is difficult and there is a price problem. Also, the specific gravity is as high as 2 or more,
The carrier is rather heavy as it needs to have a certain thickness to withstand the carving process. Further, the coefficient of linear expansion is as large as 11 to 13 × 10 ⁻⁵ / ° C., and the dimensional change due to temperature change is large. It is also opaque.

PFA can be injection-molded and has a high heat resistance of 200 ° C. or higher. However, the transparency is insufficient,
The shrinkage at the time of molding is extremely large at 4 to 5%, and the linear expansion coefficient is also large at about 12 × 10 ⁻⁵ / ° C., which makes it difficult to obtain a precise molded product with high dimensional accuracy. It was difficult to synthesize the material, was not suitable for mass production, and had a price problem.

Further, during the above-mentioned steps, treatments, movements, etc.,
If a small amount of organic matter or the like is eluted from the carrier, a highly accurate product cannot be manufactured. Therefore, it is necessary to select a resin or the like that hardly elutes such organic matter or the like as the material of the carrier.

These are not only problems of the carrier,
The pipes, valves, tubes, tanks, etc. used to perform the processes, treatments, and movements described above also have chemical resistance, heat resistance, and low organic substance elution (when using chemicals or ultrapure water, minute dust or It is necessary that the trace amount of organic matter is difficult to elute).

Polyvinylidene fluoride or polyether ether ketone, which has a relatively small amount of organic substance elution, is used as a pipe material for IC production, but the low organic substance extraction property is insufficient and the organic substance low elution property is lower. Was required.

Further, the IC tray and the carrier tape for arranging and supplying the electronic parts when the electronic parts are mounted on the printed wiring board or the hybrid IC, have a high dimensional accuracy in molding, low hygroscopicity, low electrostatic property, and electronic parts. It is required to have heat resistance and the like for heating and drying in the state of holding.

For such applications, polystyrene is mainly used.
Although hard vinyl chloride or the like is used, there is a problem that it is deformed by heating. Also, crystalline polymers such as polyethylene terephthalate and polybutylene terephthalate have been studied, but there was a problem that warpage occurs due to heating.

On the other hand, the thermoplastic norbornene light resin has been attracting attention as a resin capable of injection molding, suitable for mass production, and excellent in heat resistance, moisture resistance, chemical resistance, transparency and the like.
However, it was known that it has excellent chemical resistance to organic solvents, etc., but how much resistance it has to chemicals such as strong acids and strong alkalis for semiconductor manufacturing, and to compare it with other resins Therefore, it was not known how much the amount of organic substances was eluted.

[0018]

As a result of earnest research, the present inventors have found that the thermoplastic norbornene-based resin is resistant to various strong acids, strong alkalis, etc., and the organic matter in the resin is difficult to be extracted. Furthermore, they have found that they are excellent as materials for electronic component processing equipment, and have completed the present invention.

[0019]

Thus, according to the present invention, there is provided a device that comes into contact with an electronic component, a production intermediate thereof, or a treatment liquid in the production process, the contact surface of which is formed of a thermoplastic saturated norbornene resin. A device for processing electronic parts is provided.

(Thermoplastic norbornene-based resin) The thermoplastic norbornene-based resin is a resin known in JP-A-3-14882 and JP-A-3-122137, and specifically, a norbornene-based monomer is developed. Ring polymer hydrogenated product,
Examples thereof include addition-type polymers of norbornene-based monomers, addition-type polymers of norbornene-based monomers and olefins, and modified products of these polymers and hydrogenated polymers.

The norbornene-based monomer is also a monomer known in the above-mentioned publications, JP-A-2-227424 and JP-A-2-276842, and examples thereof include norbornene, its alkyl, alkylidene and aromatic substituted derivatives. And halogens, hydroxyl groups of these substituted or unsubstituted olefins,
Polar group substituents such as ester group, alkoxy group, cyano group, amide group, imide group and silyl group, for example, 2-norbornene, 5-methyl-2-norbornene, 5,5-dimethyl-2-norbornene, 5- Ethyl-2-norbornene, 5-butyl-2-norbornene, 5-ethylidene-
2-norbornene, 5-methoxycarbonyl-2-norbornene, 5-cyano-2-norbornene, 5-methyl-5-methoxycarbonyl-2-norbornene, 5-phenyl-2-norbornene, 5-phenyl-5-methyl- 2-norbornene and the like; a monomer in which one or more cyclopentadiene is added to norbornene, a derivative or a substitution product similar to the above, for example, 1,4: 5,8-dimethano-
1,2,3,4,4a, 5,8,8a-2,3-cyclopentadienonaphthalene, 6-methyl-1,4: 5,8
-Dimethano-1,4,4a, 5,6,7,8,8a-octahydronaphthalene, 1,4: 5,10: 6,9-trimethano-1,2,3,4,4a, 5,5a , 6, 9,
9a, 10,10a-dodecahydro-2,3-cyclopentadienoanthracene, etc .; a polycyclic monomer that is a multimer of cyclopentadiene, a derivative or substituent similar to the above, for example, dicyclopentadiene, 2,3-dihydrodicyclopentadiene and the like; adducts of cyclopentadiene and tetrahydroindene and the like, derivatives and substitution products similar to the above, for example, 1,4-methano-1,4,4
a, 4b, 5,8,8a, 9a-octahydrofluorene, 5,8-methano-1,2,3,4,4a, 5,8,
8a-octahydro-2,3-cyclopentadienonaphthalene and the like; and the like.

The norbornene-based monomer may be polymerized by a known method, and if necessary, it is a thermoplastic saturated norbornene-based resin by copolymerizing with another copolymerizable monomer or by hydrogenation. It can be a thermoplastic norbornene-based polymer hydrogenated product. Further, a polymer or a polymer hydrogenated product is subjected to a method known in JP-A-3-95235 or the like to obtain an α, β-unsaturated carboxylic acid and / or a derivative thereof, a styrene-based hydrocarbon, an olefin-based unsaturated bond and a hydrolyzed product. It may be modified by using an organosilicon compound having a decomposable group or an unsaturated epoxy monomer.

The number average molecular weight D measured by GPC (gel permeation chromatography) analysis with a toluene solvent is preferably from 1 to 200,000, and the weight average molecular weight is from 2 to 600,000, and preferably the number average molecular weight. Two
100,000, and a weight average molecular weight of 30,000 to 300,000. If the molecular weight is smaller than this range, sufficient strength cannot be obtained and cracking easily occurs. If the molecular weight is larger than this range, There are inconveniences that the fluidity at the time of molding deteriorates and it is difficult to mold, and that it is difficult to synthesize resins with good reproducibility and productivity.

Further, from the viewpoint of resistance to light deterioration and weather resistance, and resistance to deterioration such as decomposition and coloring from various chemicals, it is preferable that the olefinic unsaturated bond is not contained in large amount, and therefore the structural unit after polymerization is not contained. In the case where one or more carbon-carbon unsaturated bonds are present, hydrogenation is preferable, and in that case, the hydrogenation rate is usually 90% or more, preferably 95% or more, more preferably 99%. That is all.

The characteristics of the thermoplastic saturated norbornene resin change depending on the selection of the monomer, the molecular weight, the modification reaction and the like. For example, as a molding material for a carrier for semiconductor manufacturing, 70 ° C. at a load deflection temperature of 18.6 kgf / cm ^2.
The above is preferable, 90 ° C or more is more preferable, and 110 ° C or more is preferable. In order to satisfy this preferable condition, the glass transition temperature (hereinafter, T
g) is 90 ° C. or higher, more preferably 110 ° C. or higher, and particularly preferably 130 ° C. or higher. In order to have Tg of 90 ° C. or higher within the above-mentioned molecular weight range, in the case of a homopolymer hydrogenated product, a cyclopentadiene multimer, its derivative or substituted product, cyclopentadiene and tetrahydroindene, etc. In the case of a copolymer or a hydrogenated product of a copolymer, using a tricyclic or higher monomer such as an adduct, a derivative or a substitution product thereof, a structural unit derived from a tetracyclic or higher monomer is generally used. % Or more, more preferably 70% or more, and particularly preferably 90% or more, or polymerization may be carried out after the polymerization to give a structure similar thereto. However, for the thermal efficiency of injection molding, Tg
Is preferably 200 ° C. or less.

When heat resistance is also required for electronic component processing equipment other than the semiconductor manufacturing carrier, it is preferable to provide the necessary heat resistance as described above.

The specific gravity of the thermoplastic norbornene-based resin varies slightly depending on the type of the monomer, but is generally 0.95 to 1.
It is 1.

The water absorption of the thermoplastic norbornene-based resin varies depending on the type of the monomer, but is 0.3 in the case of a homopolymer hydrogenated norbornene-based monomer having a polar group having relatively poor water absorption. % Or less, 0.1% or less with a homopolymer of norbornene-based monomer containing no polar group,
More preferably, it is possible to synthesize a resin having a water absorption of 0.01% or less. A resin obtained by polymerizing a monomer not containing a polar group has a high hydrophobicity, and a contact angle of water of 50 ° or more, preferably 80 ° or more is possible, and water is well repelled, so that the water is sharp.
Suitable for semiconductor manufacturing carriers and trays.

The molding shrinkage of the thermoplastic norbornene resin is usually 0.7 to 0.9%, and the linear expansion coefficient is 6 to 8 ×.
When it is in the range of 10 ⁻⁵ / ° C. and transparency is not required, a filler, a fiber and the like are added as described below to obtain a molding shrinkage ratio of about 0.2% and a linear expansion coefficient of 2
It can be lowered to about 10 ⁻⁵ / ° C., and is suitable as a molding material for electronic component processing equipment used in processes involving temperature changes.

Further, the thermoplastic norbornene resin is
Even if it contains organic impurities derived from its polymerization, hydrogenation, etc., if the surface organic matter is removed by washing with an organic solvent such as water or alcohol after molding, the organic matter will be kept at 80 ° C. The amount of organic matter extracted per day in warm water is an amount of organic carbon (TOC) of 500 μg / m ² or less, and the amount eluted is practically no problem. Substantially no trace amount of organic matter is eluted into the contacted liquid.

If desired, the thermoplastic norbornene-based resin may include a phenol-based or phosphorus-based antioxidant, a phenol-based heat deterioration inhibitor, a benzophenone-based or hindered amine-based UV stabilizer, and an aliphatic alcohol ester. Various additives such as auxiliary agents such as partial ester and partial ether of polyhydric alcohol;
Further, within a range not impairing the object of the present invention, rubber such as polybutadiene, polyisoprene, SBS, SIS, SEBS, polystyrene, poly (meth) acrylate, polycarbonate, polyester, polyether, polyamide, polyimide, polysulfone and other resins It is also possible to use a mixture of the above. Furthermore, when used in electronic component processing equipment that does not require transparency, various minerals such as talc and titanium white and other fillers for the purpose of improving identification and heat resistance and strength by color coding,
Fibers, organic or inorganic pigments, etc. can also be used.

In general, it is preferable that the electronic component processing equipment is not easily charged, and it is preferable to add an additive having an antistatic effect. Examples of such additives include long-chain alkyl alcohols such as stearyl alcohol and behenyl alcohol, antistatic agents such as fatty acid esters of polyhydric alcohols such as glycerin monostearate and pentaerythritol monostearate, carbon fiber, graphite, and amorphous. Examples include antistatic fillers and fibers such as carbon, tin oxide powder, antimony-containing tin oxide powder, and metal powder. The addition amount varies depending on what is added, but the antistatic agent is usually added in an amount of about 0.01 to 10% by weight, the antistatic filler is added in an amount of about 1.0 to 20% by weight, and the surface resistance value of the resin is 10 ¹² Ω or less. , Preferably 10 ¹⁰ Ω or less, more preferably 10 ⁸ Ω or less.

(Electronic Component Processing Equipment) The electronic component processing equipment referred to in the present invention means (A) equipment that comes into contact with electronic components such as semiconductors such as IC and LSI, hybrid ICs, liquid crystal display elements, light emitting diodes, and the like. (B) a wafer, a liquid crystal substrate, a device that comes into contact with a manufacturing intermediate such as a laminate of a transparent electrode layer or a protective layer, and (C) a chemical solution used for treating the manufacturing intermediate in the process of manufacturing an electronic component, Equipment that comes into contact with processing solutions such as ultrapure water.

Examples of (A) the equipment that comes into contact with the electronic component and (B) the equipment that comes into contact with the manufacturing intermediate of the electronic component include, for example:
Examples include processing and transfer containers for tanks, trays, carriers, cases , shippers and the like; protective materials such as carrier tapes and separation films. (C) Examples of equipment that comes into contact with the treatment liquid include pipes, tubes, valves, flow meters, filters, pumps, and other pipes; sampling containers, bottles, ampoules, bags, and other liquid containers; and the like. To be

The electronic component processing equipment of the present invention is in contact with an electronic component, a manufacturing intermediate, and a treatment liquid, and the contact surface is made of a thermoplastic norbornene resin. If the contact surface is made of a thermoplastic norbornene-based resin, it may be a thermoplastic norbornene-based resin molded product or a thermoplastic norbornene-based resin whose surface is coated by a method such as solution coating or powder coating. . For example, in the case of a pipe or the like, if the inner surface of a metal pipe is coated with a thermoplastic norbornene-based resin, the strength is excellent, and if a thermoplastic norbornene-based resin is extruded, a lightweight pipe is obtained.

A semiconductor manufacturing carrier will be described below as an example of the electronic component processing equipment.

(Shape of Carrier for Semiconductor Manufacturing) A wafer generally used for semiconductor manufacturing at present is a single crystal of silicon, having a thickness of about 500 to 1000 μm and a diameter of 1.
It is a circular, very hard plate such as 5, 2, 2.5, 3, 3.5, 4, 5, 6, 8 inches. Further, the glass substrate for semiconductor production which is generally used at present is a glass or synthetic colts plate having a thickness of 1/8 inch or 2 to 8 inches.
This is a very hard rectangular plate having a side of about 4, 5, 6, 6 or 7 mm, and an image made of chrome or the like corresponding to a fine electronic circuit is formed on the surface of the plate. A plate called a reticle or photomask for imagewise exposure is formed on the surface.

The semiconductor manufacturing carrier, which is an electronic component processing equipment of the present invention, can be held and taken in and out without contact between wafers and glass substrates. It must be able to be immersed in chemicals. In general, the surfaces are parallel to each other and can be stored without contacting each other, and can be taken in and out without contacting one by one in a direction parallel to the surfaces. As such a structure,
Generally, a structure in which a wafer or glass substrate and a space are alternately stacked in layers in a housed state is structured so that the wafer or glass substrate does not move in any direction other than the take-out direction. By providing a groove or a protrusion, a space is provided between the wafer and the glass substrate. Furthermore, in order to make the heat treatment and the immersion treatment in chemicals etc. efficient and as uniform as possible, generally, liquids etc. Has opened the inflow port. As specific examples, JP-A-2-63112, JP-A-2-143545, JP-A-2-161745,
Examples thereof include those known in JP-A-3-95954, those shown in FIG. 1 and carriers defined in the SEMI standard.

(Method of molding carrier for semiconductor manufacture) In order to obtain a carrier having a complicated shape such as a carrier for semiconductor manufacture,
For example, there is a method in which a thermoplastic norbornene-based resin is coated on a product manufactured by assembling metal parts. As a method for producing a resin composed only of a thermoplastic norbornene-based resin, generally, only a carving process or an injection molding method is available, and either method may be used. From the viewpoint of mass productivity, a method of injection molding a material consisting of only a thermoplastic norbornene resin is preferable.

As a method of injection molding, a general injection molding machine can be used, and the temperature of the resin at the time of molding is generally about 200 to 350 ° C., and other conditions are general polystyrene and the like. Can be molded with the same settings as. Predrying or hopper dryer required for polycarbonate resin or the like may be used, but is not particularly required.

(Method of Using Carrier for Semiconductor Production) The carrier for semiconductor production of the present invention has an environment of a heat distortion temperature or lower, usually lower than Tg, preferably lower than Tg-10 ° C., more preferably lower than Tg-20 ° C. Used in. In particular, when a load is applied by housing a wafer, a glass substrate, or the like, it is preferable to use the load at a temperature lower than the bending temperature.

The general chemicals used in the batch treatment are as described above. Among them, the surface is carbonized with sulfuric acid having strong oxidizing property, and trichlororetylene, which is a chlorine-based solvent among organic solvents, is used. , Dissolved in trichlene, etc.,
Since it has resistance to other chemicals, the carrier for semiconductor production of the present invention can be used in a wide range of treatments.

[0043]

EXAMPLES The present invention will be described in more detail below with reference to Reference Examples, Examples and Comparative Examples.

Reference Example 1 6-Methyl-1,4: 5,8-dimethano-1,4,4
Resin obtained by hydrogenation reaction of a ring-opening polymer of a, 5,6,7,8,8a-octahydronaphthalene (number average molecular weight 28,000, hydrogenation rate of about 100%, Tg140
0.2 parts by weight per 100 parts by weight of the phenolic anti-aging agent pentaerythrityl-tetrakis (3-
0.2 parts by weight of (3,5-di-tertiarybutyl-4-hydroxyphenyl) propionate) was added, and 240 using a twin-screw kneading machine (Toshiba Kikai TEM-35).
Pellets were formed by melt extrusion at ℃.

Reference Example 2 The pellets obtained in Reference Example 1 were injection molded under the following conditions,
A 50 mm × 50 mm test piece having a thickness of 3 mm was obtained. Molding machine: Mold clamping pressure 350 tons (Toshiba Machine Co., Ltd. I
S-350FB-19A) Resin temperature: 280 ° C Mold temperature: 100 ° C (fixed side), 100 ° C (movable side)

Specific gravity of this test piece 1.01, 18.6 kg
f / cm ² load deflection temperature 120 ° C, molding shrinkage 0.7
%, Linear expansion coefficient 7.0 × 10 ⁻⁵ / ° C., water absorption 0.007
%, The water contact angle was 89 °, and the light transmittance was 90% or more in the wavelength range of 400 to 700 nm.

This test piece was treated with concentrated sulfuric acid, 30% diluted sulfuric acid, 7
0% nitric acid, phosphoric acid, hydrofluoric acid (hydrofluoric acid 7% by weight, nitric acid 4
2% by weight, 51% by weight of water), 37% hydrochloric acid, 30% hydrogen peroxide solution, saturated potassium hydroxide aqueous solution, 29% ammonia water, acetone, isopropyl alcohol, trichloroethylene, 2.38% by weight TMAHO aqueous solution, etching for aluminum It was immersed in a liquid (80% by weight of concentrated phosphoric acid, 5% by weight of nitric acid, 5% by weight of glacial acetic acid, 10% by weight of water) for 5 minutes.

Although dissolved in trichlorethylene and carbonized on the surface with concentrated sulfuric acid, no influence of other chemicals was observed and good chemical resistance was shown.

Reference Example 3 Pellets were obtained by repeating the same procedure as in Reference Example 1 except that 9 parts of carbon black, which was an antistatic filler, was added, and the treatment with a biaxial kneader was repeated 4 times.

Example 1 The pellets obtained in Reference Example 1 were injection-molded under the same conditions as in Reference Example 2 to obtain a 3-inch wafer carrier shown in FIG.

A 3-inch wafer was placed in this carrier and left at 70 ° C. for 30 minutes, but there was no abnormality.

Example 2 The pellet obtained in Reference Example 3 was injection-molded under the same molding conditions as in Reference Example 2 to obtain a test piece having a thickness of 1 mm and a diameter of 100 mm.

The surface resistance value of this test piece was 3 × 10 ⁶ Ω.

Further, this test piece was subjected to 110 in an oven.
The drying treatment at 24 ° C. for 24 hours was repeated 5 times, but no change in appearance such as warpage or twisting was observed.

Comparative Example 1 The carrier for 3-inch wafer shown in FIG. 1 was molded from polypropylene, and the 3-inch wafer was stored at a temperature of 70 ° C.
When it was left for 30 minutes, it was deformed and could not hold the wafer. When the carrier was lifted, the wafer dropped.

Reference Example 4 Pure water 5 obtained by holding 20 test pieces obtained in Reference Example 2 at 80 ° C.
When immersed in 00 g for 24 hours, the amount of organic carbon extracted was 1 × 10 ² μg / m ² per day.

Thereafter, the same test piece was again subjected to pure water 5 at 80.degree.
When immersed in 00 g for 144 hours, the amount of extracted organic carbon was 7 μg / m ² or less, which is the measurement limit per day.

Comparative Example 2 The procedure of Reference Example 4 was repeated except that a test piece made of polyvinylidene fluoride of the same shape was used instead of the test piece of Reference Example 2, and organic carbon was extracted by extraction at 80 ° C. for 24 hours. The amount of 6.5 × 10 ³ μg / m ² of organic matter extracted per day was 7.2 × per day when extracted at 80 ° C. for 144 hours.
It was 10 ² μg / m ² .

Example 3 The pellets obtained in Reference Example 1 were heated at a resin temperature of 240 ° C. using a single screw extruder (VS40 manufactured by Tanabe Plastic Machinery Co., Ltd.).
Then, a tubular material having an outer diameter of 22 mm and an inner diameter of 16 mm was continuously extruded and cut into pieces each having a length of 2 m to obtain a tubular material. This pipe material is cut to have an outer diameter of 22 mm, an inner diameter of 16 mm, and a length of 2
I got m pipes.

The amount of organic matter extracted was measured in the same manner as in Reference Example 4 except that 4 pipes were used instead of 20 test pieces. Extraction at 80 ° C for 24 hours is 1 x 1 per day
Organic matter was extracted in an amount of 0 ² μg / m ² , and the extraction limit at 80 ° C. for 144 hours was 7 μg / m ² or less, which is the measurement limit per day.

[0061]

EFFECTS OF THE INVENTION It is possible to obtain a member for manufacturing an electric component, which has good dimensional accuracy, is less susceptible to the influence of temperature, is lighter, has excellent chemical resistance, and is less likely to elute organic substances and the like.

[Brief description of drawings]

FIG. 1 is an example of a semiconductor manufacturing carrier of the present invention, and is an explanatory view of a semiconductor manufacturing carrier used in an example of the present invention.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shinichi Takahashi               1-2-1 Yokou, Kawasaki-ku, Kawasaki-shi, Kanagawa               Zeon Corporation R & D Center               Within (72) Inventor Sadaji Ohara               1-2-1 Yokou, Kawasaki-ku, Kawasaki-shi, Kanagawa               Zeon Corporation R & D Center               Within (72) Inventor Izu Natsume               1-2-1 Yokou, Kawasaki-ku, Kawasaki-shi, Kanagawa               Zeon Corporation R & D Center               Within                (56) Reference JP-A-3-95954 (JP, A)                 JP-A-3-223328 (JP, A)                 JP 62-297590 (JP, A)                 Japanese Patent Laid-Open No. 2-143095 (JP, A)                 JP 62-97686 (JP, A)                 JP-A 1-224090 (JP, A)                 JP-A-63-137820 (JP, A)                 Actual Kaihei 3-41291 (JP, U)

Claims (4)

(57) [Claims] 1. A electronic component, a equipment in contact with the processing solution for the production intermediate, or a manufacturing process that has contact surfaces is formed of a thermoplastic saturated norbornene resin, 80 after molding of the resin The amount of organic matter extracted per day in warm water at ℃ is 500μg / in terms of organic carbon (TOC)
A device for processing electronic parts, characterized in that it is m ² or less. 2. The device for treating electronic parts according to claim 1, wherein the thermoplastic norbornene-based resin has a number average molecular weight of 10,000 to 200,000. 3. The device for processing electronic parts according to claim 1, wherein the thermoplastic norbornene-based resin has an antistatic agent added thereto. 4. A carrier for semiconductor manufacturing,
The electronic component processing equipment according to 2 or 3.