JP3504472B2 - Semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a high frequency and high output transistor used for satellite communication, terrestrial microwave communication, mobile communication, etc., and more particularly to mounting on a stabilizing circuit of the high frequency and high output transistor. Concerning configuration improvements.

[0002]

2. Description of the Related Art Generally, when a semiconductor device such as a high-power amplifier is formed by using a source-grounded or emitter-grounded transistor element, if the frequency is low, the gain becomes large, so that the feedback component of the transistor or the circuit causes an error. Since a stable operation is achieved, that is, the stability coefficient K obtained from the S parameter of the transistor is 1 or less, a transistor including a stabilizing circuit has been conventionally proposed.

As a conventional semiconductor device having a built-in stabilizing circuit, there is a semiconductor device described in, for example, Japanese Patent Application Laid-Open No. 1-132171, and FIGS. 9 to 11 show the G shown in the above document.
It is a circuit diagram of a semiconductor device using aAsFET or a plan view of the semiconductor device.

In FIG. 9, 1 is a source electrode, 2 is a gate electrode, 3 is a drain electrode, 4 is an FET having these electrodes 1 to 5, 5 is a resistor inserted in parallel with FET 4, and 6 is a resistor.
Is a capacitor for cutting DC (direct current) component, 7
Is an input matching circuit, 8 is a gate electrode bias circuit, 9 is an output matching circuit, and 10 is a drain electrode bias circuit.
In this semiconductor device, the resistor 5 inserted in parallel to the input side of the FET 4 constitutes a stabilizing circuit. The degree of stabilization can be changed by the ratio of the input impedance of the FET 4 and the size of the parallel resistance 5. The smaller the value of the resistance 5 compared to the input impedance, the larger the current flowing through the resistance 5. , The component consumed by the resistor 5 increases, and the resistance can be further stabilized.

Next, in FIG. 10, reference numeral 11 is a resistor inserted in series with the input of the FET 4, and the others are the same as those in FIG. In this semiconductor device, the resistor 11 inserted in series on the input side of the FET 4 constitutes a stabilizing circuit to stabilize the FET 4. Specifically, the degree of stabilization can be changed by the ratio of the input impedance of the FET 4 and the size of the series resistor 11. The larger the value of the resistor 11 compared with the input impedance, the more the resistor 11 consumes the power. It can be more stabilized by increasing the amount of ingredients.

FIG. 11 shows the stabilizing circuit shown in FIG.
It is a figure explaining the example comprised on the AsFET substrate. FIG. 11A is a plan view of a stabilizing circuit formed on a GaAsFET substrate, and FIG. 11B is a sectional view taken along line AA of FIG. 11A. In FIG. 11, 1 is a source electrode, 2 is a gate electrode, 3 is a drain electrode, 4 is an FET having the source electrode 1, the gate electrode 2 and the drain electrode 3, 11 is a resistor, 13 is a GaAs substrate, and 14 is a bonding metal. The resistor 11 inserted between the gate electrode 2 and the bonding metal 14 is made of a barrier metal,
We are aiming for stabilization of 4.

Further, in a conventional power combining type transistor semiconductor device such as a high frequency and high output amplifier, a matching circuit for reactance and resistance components is provided at the input and output ends of each combined transistor. FIG. 12 is a circuit diagram showing a conventional high output amplifier. In the figure, 15
Is a gate input terminal, 16a and 16b are input lines, 4a,
4b is an FET, 17 is a resistor, 18a and 18b are output lines, 19 is a drain output terminal, 20a and 20b are output lines, 21 is a resistor, and 22a and 22b are input lines. In this figure, the input / output impedance of the FET 4 is the line 20.
After being converted into a resistance component only by a, 20b, 22a, and 22b, the line 16 of (1/4) λs (λs: propagation wavelength)
The respective outputs are combined by a distribution / combining circuit composed of a, 16b, 18a, 18b and resistors 17, 21.
The resistors 17 and 21 are Wilkinson type synthetic circuits of (1/4) λs, and are provided to maintain isolation characteristics between both lines.

[0008]

The conventional semiconductor device is
In a semiconductor device configured as described above and having a stabilizing circuit that acts as a parallel resistance or a series resistance with respect to a transistor, the resistance value of the parallel resistance or the series resistance is fixed and fixed, and therefore, depending on the characteristic difference of the transistor, However, there is a problem that the stabilization circuit needs to be mounted and connected as an external component separately.

In addition, in a semiconductor device having a stabilizing circuit that acts as a parallel resistance with respect to a transistor and a Wilkinson type power combining type semiconductor device having an isolation resistor, the parallel resistor and the isolation resistor forming the stabilizing circuit are Since the connections are asymmetrical with respect to the input line, there is a problem in that there is a difference in the path length from each cell forming the transistor to each of the resistors.

In a semiconductor device having power combining type transistors, since the matching circuit for the reactance components at the input / output ends of each combined transistor is constant, the reactance components may differ depending on the characteristic difference of the input / output impedance of the transistors. There was a problem that it could not be canceled.

The present invention has been made to solve the above problems, and provides a path from a plurality of input pads or a plurality of cells of a high-frequency high-power transistor to a resistor constituting a stabilizing circuit. It is an object of the present invention to obtain a semiconductor device having equal lengths so that a plurality of cells forming a transistor are uniformly stabilized. Furthermore, by appropriately selecting the wire wiring that connects the resistor and the capacitor that form the stabilization circuit, the stabilization characteristics can be easily adjusted by using the same substrate in accordance with the transistor characteristic difference in stabilization and matching. It is an object to obtain a semiconductor device to be obtained.

[0012]

To achieve the above object, according to the Invention The semiconductor device of the invention according to claim 1 includes a stabilization circuit between the input pad and the input matching circuit of the high-frequency high-power transistor In a semiconductor device, the above stabilizing circuit
Is a microstrip line path of input lines constituting the input matching circuit, parallel to and above fill and the transistor
Parallel resistance to the above transistor provided in the same width as the force line
Thin film resistor acting as the above and the above microstrip line
Stabilization circuit thin film provided as one side ground on both sides along
Set up a resistor and a capacitor that works as a series capacitor.
The input pad of the transistor and the input matching circuit
Pass the wire wiring to connect directly above the thin film resistor,
They are provided in parallel, and the capacitor and thin film resistor are
It is characterized in that a wire wiring for connecting with an antibody is provided to form a stabilizing circuit in which a series circuit of the thin film resistor and the capacitor is connected in parallel to the transistor.

Further, the semiconductor device of the invention according to claim 2, in a semiconductor device having a stabilization circuit between the input pad and the input matching circuit of the high-frequency high-power transistor,
The stabilizing circuit includes the transistor and the transistor on the microstrip line of the input line forming the input matching circuit.
The transistor provided in parallel and in the same width as the input line
Thin film resistor with multiple steps acting as parallel resistors for
And one-sided contact on both sides along the above microstrip line
Stabilization circuit thin film resistor and series capacitor
And, and input matching with the input pad of the above transistor
The wire wiring connecting the circuit by passing directly above the thin film resistor having a plurality of stages, provided in parallel, respectively, the calibration
Depending on which stage of the capacitor and thin film resistor is connected, the transistor
Adjust the resistance value of the thin film resistor that acts as a parallel resistor to the resistor.
It is characterized in that a stabilizing circuit that can be adjusted is configured.

[0014]

[0015]

[Means for Solving the Problems] Further, according to claim 3,
Ming semiconductor device is a semiconductor device having a stabilization circuit between the input pad and the input matching circuit of the high-frequency high-power transistor, the stabilization circuit includes a microstrip line of input lines constituting the input matching circuit Above, above
Above the input line and parallel to the transistor
A thin film resistor that acts as a parallel resistor to the transistor
Resistance value of the thin film resistor acting as series resistance and the above series resistance
The thin film resistor that functions to adjust the
Stabilization circuit with one side grounded on both sides along the track
A thin film resistor and a capacitor that works as a series capacitor,
The input pad of the above transistor and the input matching circuit
Wires for connecting to and are provided in parallel, directly above the thin film resistor, and the capacitor and the thin film resistor are connected.
Provide a wire wiring to connect with the membrane resistor, and
The series circuit of the antibody and the capacitor is connected to the transistor.
On the other hand, a stabilizing circuit connected in parallel to the transistor and a stabilizing circuit connected in series to the transistor are configured.

A semiconductor device according to a fourth aspect of the present invention is a semiconductor device having a stabilizing circuit between a plurality of N cells forming a high frequency and high output transistor and an input matching circuit, wherein the stabilizing circuit is: On the transistor side on the microstrip line pattern of the input line that constitutes the input matching circuit, a pair of a thin film resistor that acts as a series resistor and a thin film resistor that acts as a parallel resistor for each cell are arranged in the input line direction. The input line patterns at both ends are used as electrodes, and N pairs of thin-film resistor patterns corresponding to one cell on the input line pattern are provided in the input line pattern width direction, and are adjacent in the pattern width direction on the input line pattern. The N thin film resistors acting as the series resistors and the thin film resistors acting as the parallel resistors are insulated from each other. A thin film resistor that acts as an isolation resistor is provided between the electrode parts that connect the thin film resistors corresponding to cells, and the transistor side end of the thin film resistor that acts as a parallel resistor for each cell is the input line. A common electrode is formed by a pattern, one-side grounded capacitors are arranged near both sides on the transistor side of the microstrip line pattern of the input line, each cell forming the transistor, and the thin film resistor corresponding to each cell. Wire wires are respectively provided between the electrodes and between the electrodes, and wire wires are provided between the common electrode on the transistor side end on the input line pattern and the anti-ground side electrode of the capacitor, and parallel to each cell. The thin film resistor acting as a resistor, the thin film resistor acting as a series resistor, and an isolation resistor between the input lines of adjacent cells. Integrating a thin film resistor acting Te, characterized by comprising a stabilizing circuit for each cell.

A semiconductor device according to a fifth aspect of the present invention is a semiconductor device having a plurality of single-ended high-frequency high-output transistor circuits, which has a plurality of high-frequency high-output transistors and a plurality of input pads for each transistor. In a semiconductor device having an isolation circuit between the input matching circuit and the input matching circuit, a thin film resistor is provided on the transistor side on the microstrip line pattern of the input line forming the input matching circuit as the isolation circuit. The same width as the pattern is provided, and the microstrip line patterns at both ends of the thin film resistor in the input line direction are used as electrode parts. The plurality of input pads of the transistor and the anti-transistor of the thin film resistor on the input line pattern are provided. Above multiple wire wiring between the side electrode part Wire wires that connect the electrode parts at the transistor side end of the thin film resistor provided on the transistor side on the input line pattern of the above-mentioned transistor of the same structure adjacent to each other across the thin film resistor. It is characterized by being provided.

Further, the semiconductor device according to the invention of claim 6, in a semiconductor device having a plurality of high-frequency high-power transistor circuit, adjacent transistors data circuits is at the connection position of the transistor and the input matching circuit, one end of the resistor A series circuit of the resistor and the capacitor for connecting the electrodes of the capacitor, and the electrodes of the other end of the capacitor are connected to each other on the microstrip line pattern of the input line constituting the input matching circuit of the transistor. On the transistor side, a thin film resistor is provided with the same width as the above microstrip line pattern, and the microstrip line patterns at both ends of this thin film resistor in the input line direction are used as electrodes, and an input that constitutes an input matching circuit of the above transistor Between the pattern on the transistor side of the microstrip line pattern of the line, Of the input line pattern, a capacitor having substantially the same width as that of the input line pattern is connected to the input line pattern, and a plurality of input pads of the transistor and electrodes of the thin film resistor on the side opposite to the transistor of the thin film resistor are provided. Characterized in that a plurality of wire wirings are provided in parallel with each other so as to extend directly above the thin film resistor, and wire wirings are provided between electrode portions on the transistor side of the capacitors of adjacent transistors. And

[0019]

[0020]

DETAILED DESCRIPTION OF THE INVENTION

Embodiment 1. 1 is a diagram for explaining a first embodiment of a semiconductor device of the present invention. 1 (a) is an equivalent circuit diagram showing the first embodiment, and FIG. 1 (b) is a plan view of relevant parts showing the first embodiment. The same parts as those in the prior art are designated by the same reference numerals.

In FIG. 1A, 4 is an equivalent circuit of a field effect transistor (hereinafter referred to as FET) composed of a plurality of cells, 1 is a source electrode, 2 is a gate electrode, and 3 is a drain electrode. Is. Reference numeral 5 is a parallel resistor forming a stabilizing circuit for stabilizing the operation of the FET 4, and 6 is connected in series with the parallel resistor in order to cut a direct current component, and one-sided contact is made.
It is a ground capacitor.

In FIG. 1 (b), 4 is a schematic plane of an FET (chip) composed of a plurality of cells, and 5 is a parallel resistor forming a stabilizing circuit, which is provided on a microstrip line pattern which is an input line. It is a thin film resistor. 7,
Reference numeral 9 is an input line and an output line of the FET 4, and here, a part of the microstrip line pattern is shown.
Reference numeral 23 is a bonding wire that connects a plurality of input pads of the FET 4 and the input line 7 forming the input matching circuit. Reference numeral 24 is a bonding wire for connecting the parallel resistor 5 and the capacitor 6 in series.

Operation of the first embodiment is shown in FIG.
This will be described with reference to (a) and (b). The input impedance of a transistor having a large gate electrode width (emitter size) is low in a desired frequency band and high in a low frequency outside the band. For this reason, a parallel resistor is suitable for stabilization at low frequencies outside the band.

In the first embodiment, the thin film resistor 5 that functions as a parallel resistor is provided between the plurality of input pads of the FET 4 and the input line 7 that constitutes the input matching circuit, and the resistance value of the parallel resistor is desired. The effect is small in the frequency band, the gain is not reduced, and by selecting a value that can stabilize the operation of the FET at a low frequency outside the band, an amplifier that is stable by a parallel resistor at a low frequency outside the band is selected. Therefore, it is possible to obtain characteristics that do not deteriorate the characteristics of the desired frequency band.

The thin film resistor 5 acting as the parallel resistor is
It is provided with the same width as the microstrip line pattern of the input line that constitutes the input matching circuit. Therefore, the input and output electrodes of the thin film resistor 5 are also formed in the same width as the thin film resistor 5. Then, a plurality of bonding wire wirings 23 connecting between the plurality of input pads of the FET 4 and the input line 7 are passed from the plurality of input pads of the FET 4 right above the thin film resistor to be parallel to each other, and the bonding wire wiring F
By connecting to the electrode portion on the ET side, the thin film resistor 5 is arranged symmetrically with respect to the center lines of the FET 4 and the input line 7, and the path length from each input pad of the FET 4 to the thin film resistor is uniform. Therefore, the cells constituting the FET 4 can perform the stabilizing operation evenly.

Embodiment 2. FIG. 2 is a diagram for explaining the second embodiment of the semiconductor device of the present invention. 2 (a) is an equivalent circuit diagram showing the second embodiment, and FIG. 2 (b) is a plan view of relevant parts showing the second embodiment. The same parts as those shown in the related art and the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 2 (a), a plurality of resistors 5, 5 a, 5 b that serve as parallel resistors forming a stabilizing circuit that stabilizes the operation of the FET 4 are provided, and the parallel resistors can be selected by selecting taps as necessary. The resistance value of No. 1 is adjustable , and the other points are the same as those in the first embodiment.

In FIG. 2B, the plurality of resistors 5, 5a, 5b are thin film resistors provided on the microstrip line pattern which is the input line. 23 is a FET
4 is a bonding wire for connecting the plurality of input pads 4 and the electrodes of the thin film resistors, which are provided on the microstrip line pattern of the input line forming the input matching circuit, on the most anti-transistor side end.

The operation of the second embodiment will be described with reference to FIG.
This will be described with reference to (a) and (b). First Embodiment
Gate electrode width (emitter size)
The input impedance of a large transistor is high in the desired frequency band and high in low frequencies outside the band. For this reason, a parallel resistor is suitable for stabilization at low frequencies outside the band. In the second embodiment, the tap of any one of the thin film resistors 5, 5a and 5b is selected in accordance with the difference in the input impedance value due to the difference in the characteristics of the FET 4, specifically, the thin film resistor. Adjusting the resistance value of the parallel resistor 5 forming the stabilizing circuit without changing the substrate by connecting the electrode portion of the body 5, 5a, 5b on the FET side to the capacitor 6 with the bonding wire 24. Is possible.

As the resistance value of the parallel resistance, a value is selected so that the influence is small in the desired frequency band, the gain is not reduced, and the operation of the FET is stabilized at a low frequency outside the band. In this way, at low frequencies outside the band, it is possible to realize a stable amplifier with parallel resistors without degrading the characteristics of the desired frequency band.

As described above, the thin film resistors 5, 5a and 5b selected and acting as parallel resistors are provided on the microstrip line pattern as the input line in the same width as the pattern. Therefore, the input and output electrode portions of this thin film resistor are also configured to have the same width as the above thin film resistor. Then, a plurality of bonding wire wirings 23 that connect between a plurality of input pads of the FET 4 and the input matching circuit 7 are provided directly above the thin film resistor and connected in parallel. As a result, the thin film resistor, which acts as a parallel resistance to the FET 4 regardless of the connection between the electrode of the thin film resistor and the capacitor 6, becomes FE.
The bonding wires are arranged symmetrically with respect to the center line of T4 and the input line 7, and the bonding wire path lengths from the respective input pads of the FET4 to the above-mentioned thin film resistor are made uniform, so that the cells constituting the FET4 are evenly stabilized. It is possible to activate.

Embodiment 3. FIG. 3 is a diagram for explaining the third embodiment of the present invention. FIG. 3 (a) is an equivalent circuit diagram showing the third embodiment, and FIG. 3 (b) is a main-portion plan view showing the third embodiment. The same parts as those shown in the related art and the first and second embodiments are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 3A, reference numeral 26 is an adjustment resistor 5.
This is a short-circuit bonding wire used when a and 5b are not used.

In FIG. 3B, reference numerals 5, 5a and 5b denote thin film resistors provided on the strip conductors of the microstrip line which constitutes the input line. Reference numeral 6 is a capacitor that cuts a DC (direct current) component.

Next, the operation will be described. As described in the first embodiment, in the FET having a large gate electrode width (emitter size), the parallel resistance is suitable for stabilization at a low frequency outside the band. On the other hand, when designing an input matching circuit, the wire length is designed as an inductor of the wire 23 that connects the input pad of the FET and the input matching circuit, and as an inductor of an amount that cancels the reactance component of the input impedance of the FET. .

Therefore, in the third embodiment, as in the second embodiment, a plurality of stages of thin film resistors that act as parallel resistors with respect to the FET are provided between the FET 4 and the input matching circuit 7. By changing the length of the wire wiring 23 between the input pad of the FET 4 and the input matching circuit 7 and changing the wire wiring 24 and the bonding wire 26 for short circuit, the parallel resistance can be maintained while using the same substrate. While keeping the resistance value of 5 constant, the value of the inductor 23 between the input pad of the FET 4 and the input matching circuit can be adjusted.

Fourth Embodiment FIG. 4 is a diagram for explaining the fourth embodiment of the present invention. FIG. 4A is an equivalent circuit diagram showing the fourth embodiment.
(B) is a plan view of a principal portion showing the fourth embodiment.
The same parts as those of the conventional and first, second, and third embodiments are designated by the same reference numerals, and the description thereof will be omitted. Embodiment 4 is shown
4A and 4B are diagrams showing the first embodiment.
New configuration elements added to the configurations of (a) and (b)
Is. Therefore, the basic configuration described in the first embodiment
And the operation, paragraphs 0021 to 00 of the first embodiment
25.

In FIG. 4, 11 is a series resistor which constitutes a stabilizing circuit, 11a and 11b are resistors provided for adjusting the resistance value of the series resistor, and 26 is a resistor for preventing the adjusting resistors 11a and 11b from functioning. It is a bonding wire for short circuit used.

Next, the operation will be described. The input impedance of an FET having a large gate electrode width (emitter size) is low in a desired frequency band and high in a low frequency outside the band. Therefore, as described in the first embodiment,
Parallel resistors are suitable for stabilization at low frequencies outside the band. On the other hand, in the desired frequency band and higher frequencies, a series resistor is effective for stabilization.

Therefore, in the fourth embodiment, as already described in the first embodiment, the resistor 5 and the capacitor 6 are provided in parallel, and the resistor 11 is provided in series with the FET 4. Further, the wire wiring 23 connecting the input pad of the FET 4 and the input matching circuit is connected in parallel over the thin film resistor 5. As the resistance value of the parallel resistor 5,
In the desired frequency band, a value is selected that has little effect and does not reduce the gain, and that stabilizes the operation of the FET at low frequencies outside the band.
As the size of the series resistance, a value that stabilizes at a frequency higher than the desired frequency band is selected.

In the fourth embodiment, the input line is provided with a plurality of stages of series resistors 11a and 11b in advance on the input line pattern and short-circuited by the wire wiring 26 when unnecessary. The resistance value of the resistor 11 can be adjusted. That is, by changing the mounting wire wiring 26 without changing the substrate for adjusting the stabilizing circuit, it becomes possible to cope with the change in the stabilizing characteristic due to the characteristic difference of the FET 4.

Embodiment 5. FIG. 5 is a diagram for explaining the fifth embodiment of the present invention. FIG. 5 (a) is an equivalent circuit diagram showing the fifth embodiment, and FIG. 5 (b) is a main part plan view showing the fifth embodiment. Incidentally, in the past, Embodiments 1, 2,
The same parts as those shown in 3 and 4 are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 5, 1a, 2a and 3a are FETs.
Source, gate and drain electrodes of cells constituting 4
Is a FET having a plurality of cells, 4a is a cell that constitutes the FET, 5 is a thin film resistor that acts as a parallel resistance to the cell, and 27 is an isolation resistance between cells.

Next, the operation will be described. The input impedance of an FET having a large gate electrode width (emitter size) is low in a desired frequency band and high in a low frequency outside the band. Therefore, a parallel resistor is suitable for stabilization at low frequencies outside the band. On the other hand, for stabilizing in a desired frequency band and higher frequencies, a stabilizing resistor by a series resistor is effective.

Therefore, in the fifth embodiment, the thin film resistor 5 and the capacitor 6 acting as a parallel resistor for each cell.
Is provided and a thin film resistor 11 serving as a series resistor is provided for each cell. Then, the plurality of wire wirings 23 that connect the plurality of input pads of the FET 4 and the input matching circuit 7 are connected directly in parallel with each other, just above the thin film resistor 5. The magnitude of the resistance value of the parallel resistor 5 does not significantly affect the desired frequency band, does not decrease the gain, and selects a value that can stabilize the operation of the FET at a low frequency outside the band. To do so. Further, the magnitude of the resistance value of the series resistor 11 is selected such that it is stabilized at frequencies above the desired frequency band.

Further, in the fifth embodiment, a metal electrode portion connecting a plurality of series resistors 5 and parallel resistors 11 provided on a microstrip line pattern of an input line forming an input matching circuit is connected to each FET cell. The isolation resistance 27 is used to separate the cells from each other to maintain isolation between the cells. Thus, in addition to the configuration capable of coping with the change in the stabilization characteristic due to the characteristic difference of the FET 4, it is possible to have the configuration capable of coping with the characteristic difference between the cells.

Sixth Embodiment 6 is a diagram for explaining a sixth embodiment of the present invention. FIG. 6 (a) is an equivalent circuit diagram showing the sixth embodiment, and FIG. 6 (b) is a main-portion plan view showing the sixth embodiment. Incidentally, in the past, Embodiments 1, 2,
The same parts as those shown in 3, 4, and 5 are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 6, 28 is a thin film resistor inserted between FETs (chips), and 29 is a bonding wire for connecting the thin film resistors of adjacent FETs.

Next, the operation will be described. In the sixth embodiment, the thin film resistor 28 acts as an isolation resistor between the FETs, and the isolation resistor 28 is provided between the FET 4 and the input matching circuit 7. The isolation resistor 28 is provided for each input line connected to each FET, and the adjacent electrodes are connected by the wire wiring 29. The isolation resistor 28 has a resistance value which is about 1/2 of the input impedance, and when the electrodes between the FETs are connected, the resistance value between the FETs is about the same as the input impedance. select.

Thin film resistor 2 as an isolation resistor
Reference numeral 8 is provided with the same width as the input line of the FET, and electrodes associated with the thin film resistor are provided with the same width as the thin film resistor 28.
Further, a plurality of wire wirings 23 connecting the input pad of the FET 4 and the input matching circuit 7 are provided directly above the thin film resistor 28 and are connected in parallel. As a result, each F
For each ET4, the thin-film resistor 28 is placed symmetrically with respect to the FET 4 and the input line 7, and the path length from each input pad of the FET 4 to the resistor 28 becomes uniform.
It is possible to obtain a semiconductor device that uniformly stabilizes each cell forming the ET4. Further, the configuration can cope with a change in the stabilization characteristic due to the FET 4.

Embodiment 7. FIG. 7 is a diagram for explaining the seventh embodiment of the present invention. FIG. 7A is an equivalent circuit diagram showing the seventh embodiment, and FIG. 7B is a main part plan view showing the seventh embodiment. Incidentally, in the past, Embodiments 1, 2,
The same parts as those shown in 3, 4, 5 and 6 are designated by the same reference numerals and the description thereof will be omitted.

In FIG. 7, 5 is a thin film resistor inserted as a parallel resistor, 6 is a capacitor , and 30 is a bonding wire for connecting FET chips.

Next, the operation will be described. In the seventh embodiment, when a plurality of FETs are operated as a single-ended type, a thin film resistor and a capacitor are provided on the microstrip line pattern of the input matching circuit in the same width as the pattern, and adjacent FETs are connected by wires. By doing so, a series resonance circuit composed of a wire and a capacitor is formed, and FE
The configuration is such that the operating frequency of T and the frequency of the series resonant circuit match. The basic operation of this FET is the sixth embodiment.
The operation is similar to that described in.

In the seventh embodiment, a plurality of FEs are used.
When T4 is operated as a push-pull type, the thin film resistor 5 acts as a parallel resistor with respect to the FET, and this parallel resistor is provided between the FET 4 and the input matching circuit 7. The operation of each FET is the same as that described in the first embodiment.

Embodiment 8. FIG. 8 is a diagram for explaining the eighth embodiment of the present invention. FIG. 8 (a) is an equivalent circuit diagram showing the eighth embodiment, and FIG. 8 (b) is a main-portion plan view showing the eighth embodiment. Incidentally, in the past, Embodiments 1, 2,
The same parts as those shown in 3, 4, 5, 6, 7 are designated by the same reference numerals, and the description thereof will be omitted.

In FIG. 8, 29 is a bonding wire for connecting the FET chips, and 31 is a parallel capacitor for matching.

Next, the operation will be described. In the eighth embodiment, when the two FETs 4 are operated as the push-pull type, the capacitor 31 is provided on the substrate between the FET 4 and the input matching circuit 7. Since a point at which the potential is zero occurs between the two FETs, the series wire 23 and the parallel capacitor 31 form a low-pass filter type input / output matching circuit including a constant-constant inductor and a capacitor.

[0058]

As described above, according to the invention of claim 1,
A thin film resistor that forms a stabilizing circuit that functions as a parallel resistance with respect to the transistor is provided on the input line pattern that forms the input matching circuit in the same width as the input line pattern, and from the multiple input pads of the transistor on the input line pattern. Since a plurality of wire wirings connecting between the thin film resistor and the electrode on the side opposite to the transistor are provided in parallel with each other directly above the thin film resistor, a plurality of cells forming a transistor are provided with a stabilizing circuit. It is possible to make the path lengths to the thin-film resistors that make up the transistor to be equal, and it is possible to obtain a semiconductor device in which a plurality of cells that form a transistor are uniformly stabilized.

According to the invention of claim 2, claim 1
In addition to the same effect as above, a plurality of thin-film resistors that form a stabilizing circuit that acts as a parallel resistance with respect to the transistor are provided in the same width as the input line pattern on the input line pattern that forms the input matching circuit. It is possible to adjust the resistance value of the parallel resistance that constitutes the stabilization circuit by adjusting the wire wiring from the capacitor that is connected in series with the thin film resistor that acts as a resistor to the electrode on the transistor side end of which of the above thin film resistors. As a result, it is possible to obtain a semiconductor device in which stabilization characteristics can be easily obtained by using the same substrate in accordance with the difference in transistor characteristics.

[0060]

According to the invention of claim 3 , in addition to the effect of claim 1, a plurality of thin film resistors forming a stabilizing circuit that functions as a parallel resistance and a series resistance for a transistor are input-matched. provided to an input line pattern and equal width on the input line pattern constituting the circuit, mounting connection of the thin-film resistor acting as a parallel resistance to the transistor is similar to the configuration of claim 1, further series resistance to the transistor Adjusting thin film resistor among thin film resistors
Wire the wires from one end of the adjustment thin film resistor individually
By connecting to one of the membrane resistance connection points and short-circuiting
Adjust the resistance value of the thin film resistor that works as the series resistance.
As a result, it is possible to obtain a semiconductor device in which stabilization characteristics corresponding to transistor characteristic differences can be easily obtained using the same substrate.

Further, according to the invention of claim 4 , a thin film resistor forming a stabilizing circuit that functions as a parallel resistance and a series resistance for each of a plurality of cells forming a transistor is input to an input matching circuit. A semiconductor that is provided on a line pattern and is configured so that the path lengths from the plurality of cells to the thin film resistor are equal to each other so that the plurality of cells forming a high-frequency high-power transistor can be uniformly stabilized. A device can be obtained, and a thin film resistor that acts as an isolation resistance between the input lines of adjacent cells is provided on the input line pattern that constitutes the input matching circuit to handle variations between cells and to improve high frequency It is possible to obtain a semiconductor device in which a plurality of cells forming the output transistor are uniformly stabilized.

According to a fifth aspect of the invention, in a semiconductor device having a plurality of single-ended high-frequency high-output transistors, an input that constitutes an input matching circuit of the transistors is used as an isolation circuit between adjacent transistors. A thin film resistor is provided on the microstrip line pattern of the line in the same width as the input line pattern, and between the plurality of input pads of the transistor and the electrode part of the thin film resistor on the input line pattern on the side opposite to the transistor. A plurality of wire wirings are provided right above the thin film resistor and provided in parallel with each other, and wire wirings are provided between adjacent electrode portions on the transistor side of the thin film resistor on the input line pattern of the same configuration. Therefore, the path length from the multiple input pads of the transistor to the isolation resistance is It is possible to obtain a semiconductor device in which the cells are made uniform and the cells forming the transistors are uniformly stabilized.

Further, according to the invention of claim 6 , in a semiconductor device having a plurality of high frequency and high output transistors, a thin film resistor is provided on the input line pattern constituting the input matching circuit of the transistors and the input line pattern. A capacitor having a width substantially equal to that of the input line pattern is provided on the substrate between the patterns near the transistor side end of the input line pattern, and the electrode portions at both ends of the capacitor are connected to the input line pattern, Between the plurality of input pads of the transistor and the electrode portion of the thin film resistor on the input line pattern on the side opposite to the transistor, a plurality of wire wirings are provided right above the thin film resistor and provided in parallel with each other. Wire wiring is provided between the electrode portions on the transistor side of the adjacent capacitor having the same configuration,
When operating the adjacent transistors as a single-ended type, the thin-film resistors, the capacitors, and the wire wiring are connected in series to form a resonance circuit whose resonance frequency matches the operating frequency of the transistors, thereby short-circuiting the thin-film resistors. Since it is equivalent to the above, the same effect as the invention of claim 5 can be obtained.

[0065]

[Brief description of drawings]

FIG. 1 is a diagram showing a first embodiment of a semiconductor device of the present invention.

FIG. 2 is a diagram showing a second embodiment of a semiconductor device of the present invention.

FIG. 3 is a diagram showing a third embodiment of the semiconductor device of the present invention.

FIG. 4 is a diagram showing a fourth embodiment of the semiconductor device of the present invention.

FIG. 5 is a diagram showing a fifth embodiment of the semiconductor device of the present invention.

FIG. 6 is a diagram showing a sixth embodiment of the semiconductor device of the present invention.

FIG. 7 is a diagram showing a semiconductor device according to a seventh embodiment of the present invention.

FIG. 8 is a circuit diagram showing an eighth embodiment of the semiconductor device of the present invention.

FIG. 9 is a diagram showing a conventional semiconductor device.

FIG. 10 is a diagram showing a conventional semiconductor device.

FIG. 11 is a diagram showing a conventional semiconductor device.

FIG. 12 is a diagram showing a conventional power combining transistor semiconductor device.

[Explanation of symbols]

1,1a source electrode, 2,2a gate electrode, 3,3
a drain electrode, 4 FET (field effect transistor), 4a cell, 5, 5a, 5b resistor (thin film resistor), 6 capacitor, 7 input matching circuit, 9 output matching circuit, 11, 11a, 11b resistor (thin film resistor) ,
23, 24, 25, 26 bonding wire (wire wiring), 27 resistor (thin film resistor), 28 resistor (thin film resistor), 29, 30 bonding wire (wire wiring), 31 capacitor.

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nao Takagi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation (56) References JP-A-4-317206 (JP, A) −61528 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) H03F 3/60 H03F 3/68 H01P 5/08

Claims (6)

(57) [Claims] 1. A semiconductor device having a stabilization circuit between the input pad and the input matching circuit of the high-frequency high-power transistor, the stabilization circuit includes a microstrip line path of input lines constituting the input matching circuit Parallel to the transistor and the input line
A parallel resistor is used for the above-mentioned transistor provided in the same width as the path.
And a single-sided ground on both sides along the above microstrip line.
And set it as a thin film resistor and a series capacitor of the stabilization circuit.
And a capacitor that works by connecting the input pad of the transistor and the input matching circuit.
Wai wire wiring that passes directly over the thin film resistors provided in parallel, respectively, also for connecting the capacitor and the thin film resistor
A semiconductor device comprising a stabilizing circuit in which a series circuit of the thin film resistor and the capacitor is connected in parallel to the transistor by providing a wire . 2. A semiconductor device having a stabilization circuit between the input pad and the input matching circuit of the high-frequency high-power transistor, the stabilization circuit includes a microstrip line path of input lines constituting the input matching circuit Parallel to the transistor and the input line
A parallel resistor is used for the above-mentioned transistor provided in the same width as the path.
And a single-sided ground on both sides along the microstrip line.
And set it as a thin film resistor and a series capacitor of the stabilization circuit.
And a capacitor that works by connecting the input pad of the transistor and the input matching circuit.
Or a wire line to pass directly over the thin film resistor having a plurality of stages, provided in parallel, respectively, to connect any stage of the capacitor and the thin film resistor
Allows a thin film resistor that acts as a parallel resistance to the transistor.
A semiconductor device comprising a stabilizing circuit capable of adjusting a resistance value of resistance . 3. A semiconductor device having a stabilization circuit between the input pad and the input matching circuit of the high-frequency and high output transistors, the stabilization circuit includes a microstrip line of input lines constituting the input matching circuit On the road, parallel to the transistor and the input line
A parallel resistor is used for the above-mentioned transistor provided in the same width as the path.
And thin film resistors that act as series resistors
A thin film resistor that works to adjust the resistance value of the series resistor, and one side grounded on both sides along the microstrip line.
And set it as a thin film resistor and a series capacitor of the stabilization circuit.
And a capacitor that works by connecting the input pad of the transistor and the input matching circuit.
Wai wire wiring that passes directly over the thin film resistors provided in parallel, respectively, also for connecting the capacitor and the thin film resistor
A wire is provided so that the series circuit of the thin-film resistor and
A stabilization circuit connected in parallel with the transistor,
And a stabilization circuit connected in series with the transistor
A semiconductor device characterized by forming a path . 4. A semiconductor device having a stabilizing circuit between a plurality of N cells forming a high frequency high output transistor and an input matching circuit, wherein a microcircuit of an input line constituting the input matching circuit is used as the stabilizing circuit. On the transistor side on the strip line pattern, a thin film resistor that acts as a series resistance for each cell, and a pair of thin film resistors that act as a parallel resistance are arranged in the input line direction, and the input line patterns at both ends thereof are used as electrode parts. The thin film resistor pattern corresponding to one cell on the input line pattern is provided in N pairs in the input line pattern width direction, and is adjacent in the pattern width direction on the input line pattern.
The N thin film resistors acting as the series resistors and the thin film resistors acting as the parallel resistors are insulated from each other,
A thin film resistor that acts as an isolation resistor is provided between the electrode portions that connect the thin film resistors corresponding to the cells, and the transistor side end of the thin film resistor that acts as a parallel resistor for each cell is the above. A common electrode is formed by the input line pattern, one-side grounded capacitors are arranged near both sides of the input line microstrip line pattern on the transistor side, and each cell forming the transistor and the thin film corresponding to each cell Wire wiring is provided between the electrodes between the resistors, and wire wiring is provided between the common electrode at the transistor side end on the input line pattern and the anti-ground side electrode of the capacitor. Between the input lines of adjacent cells and the thin film resistor that acts as a parallel resistor, the thin film resistor that acts as a series resistor, and Integrating a thin film resistor acting as down resistor, a semiconductor device characterized by comprising a stabilizing circuit for each cell. 5. A semiconductor device having a plurality of single-ended high-frequency high-output transistor circuits, wherein a plurality of high-frequency high-output transistors are provided, and an isolation circuit is provided between a plurality of input pads of each transistor and an input matching circuit. In the semiconductor device having the thin film resistor as the isolation circuit, the thin film resistor is provided on the transistor side on the microstrip line pattern of the input line forming the input matching circuit, in the same width as the microstrip line pattern. The microstrip line patterns at both ends in the input line direction are used as electrodes, and a plurality of wires are provided between the plurality of input pads of the transistor and the electrode of the thin film resistor on the side opposite to the transistor of the thin film resistor. Pass the wires directly above the thin film resistor and A semiconductor device, wherein wire wiring is provided to connect electrode portions of transistor side ends of a thin film resistor provided on a transistor side on an input line pattern of the above-mentioned adjacent transistor having the same configuration. 6. A semiconductor device having a plurality of high-frequency, high-output transistor circuits, wherein adjacent transistors have a circuit in which a resistor and a capacitor are connected in series at a connection position between the transistor and an input matching circuit. A thin film resistor is provided on the transistor side of the microstrip line pattern of the input line that constitutes the input matching circuit of the transistor, and a thin film resistor is connected to the microstrip line. Provide the same width as the pattern, and use the microstrip line pattern at both ends in the input line direction of this thin film resistor as the electrode part. Capacitance between patterns is almost the same width as the input line pattern. A plurality of wire wirings are provided between the plurality of input pads of the transistor and the electrode portion of the thin film resistor on the side opposite to the transistor of the thin film resistor on the input line pattern. Is provided in parallel over the thin film resistor, and wire wiring is provided between electrode portions on the transistor side of the capacitors of adjacent transistors .