JP3494904B2 - Semiconductor device manufacturing method and manufacturing apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention manufactures semiconductor devices.
When processing, the processed substrate is not exposed to the atmosphere
After being conveyed sense means, by being processed, the semiconductor device is a method of manufacturing a semiconductor device and its manufacturing apparatus to so that is manufactured in a state better.

[0002]

2. Description of the Related Art In a conventional semiconductor device manufacturing process, the presence of foreign matter on a wafer causes defects such as wiring insulation defects and short circuits. Further, as semiconductor elements are miniaturized, minute foreign matter remains in the wafer. When present, the foreign matter also causes damage to the insulating film and gate oxide film of the capacitor.

These foreign substances are of various types, such as those generated from the moving parts of the transfer device, those generated from the human body, those generated by reaction in the processing device with process gas, those mixed with chemicals and materials, etc. It is mixed in various states depending on the cause.

Therefore, one of the main operations for mass production of LSIs is the work of investigating the cause of the generation of these foreign matters and taking countermeasures, which involves detecting the generated foreign matters and determining their elemental species. Analyzing is a great clue in determining the cause.

By the way, a technique for detecting and analyzing minute foreign matters on a wafer has been already developed up to now, and is disclosed in Japanese Patent Laid-Open No. 63-135848. This technique detects the scattered light from the foreign matter generated when the foreign matter adheres to the wafer by irradiating a laser on the wafer, and detects the detected foreign matter by laser photoluminescence or secondary X-ray analysis (XMR). ) And other analytical techniques.

[0006]

However, the above-mentioned prior art is not suitable for devising countermeasures after detecting and analyzing foreign matter generated in a mass production start-up line of fine elements as semiconductor elements become finer. It is becoming sufficient, and the fact is that it is necessary to detect and analyze finer foreign matter.

Further, in order to carry out the detection / analysis of the above-mentioned minute foreign matter, the detection / analysis equipment becomes extremely large, which requires cost and space, which is an obstacle to the reduction of the mass production line. . In other words, in order to detect a minute foreign substance, it is necessary to more efficiently scatter light from the foreign substance and collect the scattered light, and for analysis of a smaller foreign substance, Auger electron spectroscopy or secondary It requires an expensive and large-scale device such as an ion mass spectrometer (SIMS). This tendency is expected to continue to grow in the future, but on the other hand, it takes a lot of time to detect and analyze such minute foreign matter, so the necessary equipment should be used as efficiently as possible for production. There is a problem that it is necessary to reduce the cost. Further, in order to reduce the mass production line, there is a problem that it is necessary to install necessary and sufficient monitors in necessary and sufficient places.

Further, among the above-mentioned analysis techniques, in the elemental analysis method using an electron beam (secondary X-ray analysis, etc.), a particle size of about 0.5 μm can be determined from the efficiency of electron beam focusing. Analysis is limited, and in order to respond to this, it is necessary to increase the beam collection efficiency, but to increase the beam collection efficiency, it is necessary to increase the energy of irradiation electrons. There was a problem that the foreign matter as the target was scattered. Further, it is difficult to obtain a resolution smaller than the dimension d calculated by the mathematical formula 1 from the wavelength λ of light by a method using light such as infrared emission spectroscopy or fluorescence spectroscopy.

[0009]

[Equation 1]

However, θ is a misalignment angle of the detection optical system.
Therefore, the above-mentioned foreign matter analysis method has a problem that it is necessary to improve the spatial resolution.

An object of the present invention, when manufacturing a semiconductor device, occurrence of foreign matters the substrate surface on the substrate
It is possible to detect it by distinguishing it from the minute flaws, and when the state of generation of foreign matter is detected, the state of the processing device is monitored based on this detection information, and therefore the subsequent generation of foreign matter is detected. The present invention provides a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus capable of easily manufacturing the semiconductor device.

[0012]

The above object is to produce a semiconductor device in a first vacuum atmosphere.
Substrate exposure, etching, cleaning, ion implantation
Of mixing process, sputtering process, or CVD process
Any of the above treatments is performed, and the treated substrate is treated as the second
On the surface of the substrate that has been subjected to the above treatment after being brought into a vacuum atmosphere
The adhered foreign matter can be detected by distinguishing it from the minute flaws on the substrate surface.
The substrate on which the foreign matter is detected is carried into the third vacuum atmosphere.
Enter and analyze the detected foreign matter, and analyze the analyzed data.
It is achieved by using the above to identify the element of the analyzed foreign substance .

Further, as a semiconductor device manufacturing apparatus , an exposure processing is performed on a substrate to be processed in a first vacuum atmosphere.
Process, etching process, cleaning process, ion implantation process,
Either sputtering process or CVD process
Processing device for performing processing and substrate processed by the processing device
The substrate that has been subjected to the above treatment by being loaded into a second vacuum atmosphere
Foreign matter adhering to the surface of the
The position of the detected foreign matter is detected separately and the position of the substrate to be processed is detected.
Position information based on the alignment mark formed above
Foreign matter detection means to be stored as a report and the foreign matter detection means
The above process is performed based on the stored foreign matter position information.
Observe foreign matter detected from the printed substrate in the third vacuum atmosphere
An analyzer for locating the foreign matter in a field of view,
Using the data analyzed by the analyzer,
And a processing device for identifying an element .

[0014]

[ Operation ] Processed substrate in manufacturing semiconductor device
Was transported to the next processing means without being exposed to the atmosphere,
If processed, make sure the semiconductor device is in good condition
It can be manufactured. Further, with the semiconductor device during actual is manufactured, in which generation state of the foreign matter on the substrate is a detection allowed. When the generation state of the foreign matter is detected, the semiconductor device can be manufactured while monitoring the state of the processing device based on the detection information and thus easily responding to the subsequent generation of the foreign matter. .

[0015]

Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 is a block diagram showing the configuration of an embodiment of a method and apparatus for mass production startup and mass production line foreign matter inspection according to the present invention. In FIG. 1, the foreign matter inspection apparatus for mass production startup and mass production line in this semiconductor device manufacturing process includes an exposure apparatus 101, an etching apparatus 102, a cleaning apparatus 103, and an ion implantation apparatus 10.
4, a semiconductor device manufacturing apparatus group 100 configured to include a sputtering apparatus 105 and a CVD apparatus 106.
A sensing unit 200 including a temperature sensor 201, a dust monitor 202, a pressure sensor 203, a vacuum dust monitor 204, and the like, and a sensing unit control system 205 thereof, and a utility group 300 including a gas supply unit 301 and a water supply unit 302. And water quality sampling wafer 4
01, gas sampling wafer 402, in-apparatus sampling wafer 403, device wafer 404, and atmosphere sampling wafer 405.
And a wafer foreign matter detection unit 501 and a pattern defect detection unit 50.
2 and a scanning electron microscope (SE
M) 601 and secondary ion mass spectrometer (SIMS) 60
2 and scanning tunneling microscope / spectroscopic device (STM / ST
S) 603, an analysis unit 60 including an infrared spectroscope 604, etc.
0, a foreign matter fatality determination system 701, a minute foreign matter cause investigation system 702, and a pollution source countermeasure system 703. Further, these components are divided into an online foreign matter inspection system 1001 for mass production line and an offline foreign matter inspection system 1002 for mass production startup line, which are combined to mass production startup and mass production line foreign matter inspection in the semiconductor device manufacturing process. The system 1000 is formed.

2 (a) to 2 (d) are perspective views showing an embodiment of the sampling section 400 in FIG. 2 (a) to (d), FIG.
The water quality sampling wafer 401 shown in (a) is a pure water pipe 406, a sampling faucet 407, and a buffer chamber 408.
And buffer chamber 4 in the unit consisting of drainage means 409
The foreign matter in the pure water in the water supply unit 302 of FIG. 1 is sampled. Similarly, the gas sampling wafer 402 of FIG. 2B is placed in the buffer chamber 412 in the unit including the gas pipe 410, the sampling valve 411, the buffer chamber 412, the rotary pump 413, and the exhaust means 414. Foreign matter in the gas of the first gas supply unit 301 is sampled. The in-apparatus sampling wafer 403 in the cross-sectional view of FIG.
Loader chamber 40 inside (such as the etching device 102 in FIG. 1)
3 and the processing chamber 417 and the unloader chamber 418, and the foreign matter generated in the processing device 415 is sampled. In this sampling, both the case of actually processing in the processing chamber 417 and the case of not processing can be considered. Further, the device wafer 404 is processed by the processing apparatus 415 (etching apparatus 1
02 etc.) is the wafer actually processed. Figure 2 (d)
The atmosphere sampling wafer 405 is placed on the sampling table 420 in the processing environment 419.
Foreign matter is sampled.

FIG. 3 is a block diagram showing the construction of an embodiment of the detecting section 500 shown in FIG. In FIG. 3, this detection unit 5
00 is a vacuum chamber 511 and an ion pump, or a high vacuum pump 512 such as a turbo molecular pump and a valve 513.
And rough pump 514 such as rotary pump and window 51
5, 516, 517, a gate valve 518, a gate valve 520, a vacuum pump 521, a valve 522, a vacuum chamber system 510 including a gas spray nozzle 523, semiconductor lasers 531 and 532, condenser lenses 540 and 541, and a mirror 533. 534, a condenser objective lens 535, 536, a detection objective lens 537, a detection optical system 530 including a detector 538 and a cooler 539, a stage unit 560 including an XYZ stage 561, a binarization circuit 571, and a stage controller 572. A signal processing system 570 including a signal processing unit 573 and a coordinate data creating unit 574, an interface chamber 581, a load lock 582, a wafer mounting unit 583, a wafer transfer unit 584, a gas spray nozzle 585, a valve 586, a vacuum pump 587, and a carriage 588. Interface part 58 consisting of Composed of a.

FIG. 4 is a block diagram showing the construction of an embodiment of the analysis unit 600 shown in FIG. In FIG. 4, this analysis unit 6
00 is a vacuum chamber 611 and an ion pump, or a high vacuum pump 612 such as a turbo molecular pump, a roughing pump 614 such as a rotary pump, a gate valve 618, a preliminary vacuum chamber 619, a gate valve 620, and a vacuum pump 62.
A vacuum chamber 610 consisting of 1 and valves 622 and gas spray nozzle 623, an atomic force microscope (AFM: Atomic Force
Microscope) tip (AFM tip) 631, weak force reaction lever 632, lever fixing part 634, STM tip 633, STMXYZ fine movement unit 635, and AFM
Bias power source 638, STM bias power source 637, current measuring means 639, 640, sample mounting table 641, STM unit arm 636, and sample STM rough drive unit 642.
An STM unit 630 including an STMXYZ fine movement unit controller 671, a sample STM rough drive unit controller 672, an analysis data creation unit 674, an analysis data storage unit 675, an analysis data determination unit 676, and a signal processing unit 670. , The detection unit 5 of FIG.
No. 00 and the same interface unit 580.

Next, the functions and operations of the sampling unit 400, the detection unit 500, and the analysis unit 600 of FIGS. 2, 3, and 4 which are the core of the offline foreign matter inspection system 1002 of FIG. 1 will be described. In the sampling unit 400 of FIGS. 2A and 2B, pure water to be used is evaluated as pure water used in various manufacturing steps of the water supply unit 302 of FIG. 1 in the unit of FIG. While pouring water onto the sampling wafer 401, foreign matter in pure water is attached to the sampling wafer 401. Alternatively, the processing apparatus 415 (for example, the etching apparatus 102) having the vacuum processing chamber of FIG.
The sampling wafer 403 is passed through the inside, and foreign matter generated in the processing device 415 is attached. Also, FIG.
The sampling wafer 405 is left at an arbitrary position in the clean room of the processing environment 419 of FIG.
Foreign matter in the atmosphere is adhered onto the surface of the metal 5. Details of the sampling wafers 401 to 405 used here are shown in FIG.
The following is a description with reference to FIG.

That is, FIG. 5 shows FIG. 1 and FIG.
It is a perspective view which shows the mirror surface wafer of the sampling wafers 401-405 of (d). The mirror-finished wafer of FIG. 5 has a mirror-polished wafer surface, and has the advantage that it is most unlikely to be affected by the wafer surface when detecting and analyzing foreign matter.

FIGS. 6A, 6B and 6C show the sampling wafers 401 to 40 of FIGS. 1 and 2A to 2D.
5 is a perspective view showing a wafer on which Si ₃ N ₄ , Poly-Si, and Al films of No. 5 are formed, respectively. FIG. 6 (a),
The wafers of (b) and (c) are, for example, in a cleaning tank (cleaning device 1
03) and the like, since the material to be cleaned is the same as that of the wafer to be cleaned, the adhered state of the foreign matter at the time of cleaning is the same, so that the septic tank can be evaluated with higher accuracy. Further, these wafers can be passed through a film forming apparatus or the like in the next step of forming the respective formed films, and the state of foreign matter generation in the film forming apparatus or the like can be evaluated.

FIGS. 7A, 7B, 7C and 7D show the sampling wafer 40 of FIGS. 1 and 2A to 2D.
FIG. 7A is a perspective view showing a wafer on which patterns 1 to 405 are formed, and the wafers of FIGS.
The patterns shown in the partially enlarged views of (c) and (d) are formed, and the pattern shapes of these wafers are models of patterns of actual devices. Figure 7
The wafers of (a) to (d) take into consideration that the attachment of foreign matter depends on the pattern shape, and these wafers can accurately reproduce the state of foreign matter attachment on an actual device. . Further, in detecting foreign matters, in the case of regularly formed patterns such as these wafers, the diffracted light from the patterns can be blocked with high precision by a spatial filter or the like, so that highly precise foreign matter can be detected. Specifically, in the case of the wafer patterns shown in FIGS. 7A and 7C, the longitudinal direction of the pattern is set to XYZ of the detection unit 500 shown in FIG.
Wafer 401 toward the y direction of stage 561 shown
If is mounted, the diffracted light from the pattern does not enter the detection objective lens 537 of the detection optical system. In addition, FIG.
In the case of the wafer pattern of (d), the pattern may be placed in a direction rotated by 45 ° with respect to the y direction of the XYZ stage 561 of the detection unit 500 of FIG. 7D contains scattered light from the intersection 406 of the pattern of FIG. 7D, the foreign object cannot be detected with higher accuracy than the pattern of FIG. 7C, but a real device is more suitable than the pattern of FIG. 7C. Since it is faithfully modeled, a higher sampling accuracy can be achieved when evaluating a cleaning tank or the like.

FIGS. 8A, 8B, 8C and 8D show the sampling wafer 40 shown in FIGS. 1 and 2A to 2D.
It is a perspective view which shows the lapping direction at the time of manufacture of 1-405, and the scanning direction at the time of inspection. Normally, when a wafer is manufactured, the mirror surface of the wafer surface is polished as a final finish. The polishing direction at this time is, as shown by the arrow in FIG. In case of rotation direction,
As shown by the arrow in FIG. 8B, the case of the wafer in the y direction and the combination of these FIGS. 8A and 8B are considered. Therefore, a large number of minute flaws parallel to the polishing direction of the wafers of FIGS. 8A and 8B are formed on the wafer surface, and the combined wafers of the polishing directions of FIGS. 8A and 8B are also formed. Although there are flaws in the direction mainly formed by the synthesis of these, these flaws become an obstacle when detecting fine particles of foreign matter on the wafer. Therefore, as shown in FIG.
As indicated by the arrows in (d), the directions r, θ, x,
By scanning in the y direction and inspecting the foreign matter on the wafer surface, the light irradiation direction 801 and the detection direction 802 at the time of inspection
On the other hand, the direction of the flaw can be kept constant, and the light mainly diffracted can be cut by this flaw direction.

The sampling wafers 401 to 405 to which the foreign matters are attached by the sampling unit 400 shown in FIGS. 1 and 2A to 2D are sent to the detection unit 500. At this time, if it is not desired to expose the wafer to the atmosphere by a vacuum processing apparatus or the like, the sampling wafers 401 to 405 can be loaded into the vacuum chamber 511 by using the interface unit 580 of FIG. Further, the sampling wafers 401 to 405 will be provided with a detection unit 500 and an analysis unit 600 later.
An alignment mark is provided as a coordinate reference when connecting the two. However, this alignment mark may be a cross mark, a # mark, or the like, and x, y, and θ are required for coordinate alignment. Therefore, it is necessary to attach it to at least two places.

In the detection unit 500 shown in FIG. 3, the sampling wafer 401 carried in by the wafer foreign matter detection unit 501 is moved to XY.
The semiconductor lasers 531 and 5 are mounted on the Z stage 561.
The light from 32 is collected by the condenser objective lens of the illumination optical system 535,
At 536, the measurement point 803 on the wafer 401 is illuminated.
The scattered light from the foreign matter on the measurement point 803 is imaged on the detector 538 by the detection objective lens 537 of the detection optical system.
The signal photoelectrically converted by the detector 538 is a binarization circuit 571.
Is binarized by and sent to the signal processing unit 573. One X
The YZ stage 561 drives the Z stage during the inspection to move the measurement point 8 to the focus position of the detection objective lens 537 of the detection optical system.
It is controlled so that 03 will come, and at the same time XY on the XY stage
The entire surface of the wafer 401 is inspected by scanning in the direction. If a foreign substance is present, the signal processing unit 573 takes in the coordinates of the XY stage from the stage controller 572, creates coordinate data in the coordinate data creation unit 574, and sends it to the analysis unit 600.

In the detector 600 of FIG. 4, the STM / STS is used.
The analysis using 603 will be described below. Analysis using STM (STS: Scanning Tonneling Spectroscop
y) is “Surface” Vol. 26 No. 6 (1988) pp. 384-391 "Application of scanning tunneling microscope / spectroscopy (STM / STS) to catalyst surface research" and the like. This document describes that STM / STS can measure with high spatial resolution, but has a drawback that element species cannot be identified. According to this document, the information that can be collected by the STM is only the bias voltage V, the tunnel current i, and the change ΔZ in the distance between the tip and the sample.
The work function φ of the sample surface can be calculated by calculating / dz. In the above literature, the reason why the element species cannot be identified is not clarified, but the reason why the element species cannot be identified is considered to be due to the following reasons. That is, since the work function φ is a function of the bond state between the element species and the element,
There are many conceivable elemental species and bonding states of elements having one work function φ. Therefore, even if the work function φ can be determined, the bonding state of elemental species and elements cannot be determined. However, the present inventors have noticed that the elements that may be mixed in the semiconductor device manufacturing line are limited, and S
It was noted that it is possible to select which element is to be measured from the limited elements based on the work function φ obtained by TM / STS as follows.

The tunnel current i _T that can be detected by the ammeter 640 of the analysis unit 600 shown in FIG.
Volume 9 pp. According to 1126-1137 "scanning tunneling microscope", it is calculated by the following mathematical formula 2.

[0028]

[Equation 2]

Where J _T is the tunnel current density, e is the electron charge, h is the Planck's constant, m is the electron mass, and φ is the work function. In this equation, V _T is the bias voltage of the bias power supply 638 and the tunnel current i _T can be measured, so only Z and φ are unknowns, and therefore
Distance Z between needle tip and sample and Z + ΔZ and tunnel current i
By measuring _T , the work function φ can be calculated.

FIG. 9 is an xy distribution diagram of the work function of the sample 401 of the analysis unit 600 of FIG. The tunneling current i _T of the sample 401 is measured by the analysis unit 600 of FIG. 4, the work function φ is calculated from Equation 2, and the work function φ is distributed on the xy plane as shown in FIG. The distribution of the materials in is known in atomic order.

FIG. 10 shows a sample 401 of the analysis unit 600 of FIG.
FIG. The value of the work function φ of the sample 401 of the analysis unit 600 of FIG. 4 is the work function of the whole system formed by the thin film 821 and the foreign matter 822 in the structure of the thin film 821 and the foreign matter 822 of the sample 401 as shown in FIG. Therefore, since the database of the xy distribution of the work function φ of the sample 401 shown in FIG. 9 differs depending on the material of the base, it is necessary to measure various base samples. On the contrary, in the case of various bases, the data of the sample 401 can be estimated by collecting these data.

FIG. 11 shows a sample 401 of the analysis unit 600 of FIG.
6 is a function diagram of a distance Z between the AFM tip 631 and the AFM tip 631 and an atomic force f. When the Z direction of the STM chip 633 is controlled while keeping the current i _A constant in the analysis unit 600 of FIG.
Sample 401 and AFM tip 63 by FM tip 631
1, the distribution of the force f between 1 can be measured, and the atomic force f between the sample 401 and the AFM tip 631 as shown in FIG.
The relationship with the distance Z between the sample 401 and the AFM tip 631 is obtained. This fz waveform can be obtained, for example, by Kittel, "4th
Edition "Introduction to Solid State Physics, Vol. 1" (published by Maruzen Co., pp. 11
4-122), it is the sum of clonal force and repulsive force energy, and thus has two parameters, and these two parameters determine the fz waveform of FIG. 11. If these two parameters are α and β, the sample 401 and the AF
The following Expression 3 is established between the force f between the M tip 631 and the distance Z between the sample 401 and the AFM tip 631.

[0033]

[Equation 3]

Further, according to Equation 3, the parameters α and β can be calculated by measuring the force f at the distance Z at two places, that is, the Z coordinate of the AFM chip drive unit 635.

FIG. 12 shows a sample 401 of the analysis unit 600 of FIG.
6 is a relationship diagram of parameters α and β of Formula 3 and a work function φ of a sample 401, which shows a relationship between the distance Z between the AFM chip 631 and the atomic force f. The result of calculating α and β from the measured values of f at the two Z positions according to Formula 3 and the value of the work function φ calculated from the measured value of i _{T according to} Formula 2 are shown in FIG.
As shown in (3), when plotted in three dimensions, the plotted position 811 or position 812 in three dimensions is determined depending on the material of the sample 401 and the type of foreign matter. That is, this α,
If the data of β and φ are measured for known foreign matter,
The type of foreign matter can be identified from the three-dimensional plot position of α, β, and φ of the measurement target.

FIG. 13 shows a sample 401 of the analysis unit 600 of FIG.
In the relationship diagram between the tunnel current i and the atomic force f, the tunnel current i _T and the atomic force f of Formula 3 are measured while the bias voltage V of FIG. 4 is kept constant and the change amount ΔZ of the distance Z is changed. And can be a database. At the current STM-related research level, although the exact correlation between the tunnel current i and the atomic force f and the relationship between the elemental species are not fully understood, the tunnel current i-atomic force f spectrum of the sample 401 is obtained. It can be used to identify the object to be measured by measuring many substances related to materials and foreign substances. Further, the spatial distribution of the work function φ is also a powerful clue for element identification.

The sampling unit 400, the detection unit 500, and the analysis unit 600 of the off-line inspection system 1002 for mass production finishing in the semiconductor device manufacturing process shown in FIG. By accumulating, it becomes possible to classify the element species of the foreign matter by comparing with the measurement result of the measurement target. This concept disregards the precise meaning of the work function and the reason for the occurrence of other phenomena, and although it lacks accuracy, it is sufficient for the purpose of "estimating" the source by identifying the element of the foreign substance. Be useful.

The sampling unit 40 of the inspection system
0 and so the units by connecting the units in the coordinate management of the detector 500 and the analyzer 600 can be normally Toki稼 kinematic mechanism the units disclosed in the prior JP 60-218845 JP The operating rate of each unit can be increased compared to the technology used by connecting as.
Furthermore, the performance of each unit alone can be easily improved. However, this is because the mechanical balance of the conventional units causes the vibration to be unbalanced and the vibration of the entire system to increase, or the electromagnetic waves of the entire system to increase. This is because it is possible to eliminate a situation where the field is out of balance and electrical noise increases.

In the corresponding system 700 of the off-line inspection system 1002 for mass production finishing in the semiconductor device manufacturing process of FIG. 1, the sampling unit 400 and the detection unit 50 are used.
0 and the source of the foreign matter is estimated based on the information of the foreign matter on the sample detected and analyzed by the analysis unit 600, and one of the measures is to eliminate dust generation on the object of the mass production line which is considered to be the source. This measure is evaluated by comparing the number of foreign particles generated before and after the measure is taken. In addition, the other is a sensing unit 200 that can easily manage real-time processes, devices and materials of an online foreign matter inspection system 1001 corresponding to a mass production line, which has been found to be a dust source for foreign matter generation, and atmosphere. By installing a monitor, this work is performed at the time of mass production of LSIs. The sensing unit 200 also corresponds to a sampling wafer, but normally monitors the product wafer 406. Further, during mass production, the device, the process, and the like are constantly monitored by the monitor of the sensing unit 200 installed in the online foreign matter inspection system 1001, and the cause is investigated by the offline inspection system 1002 when an abnormality occurs.

As an example of the sensor of the sensing section 200 of the off-line inspection system 1001 for mass production finishing in the semiconductor device manufacturing process of FIG.
4 will be described next. The air dust monitor cannot be used because there is no medium to convey dust in the vacuum.
In the embodiment of the present invention, the fact that there is no medium for carrying dust in this vacuum is used conversely. That is, if there is no medium to carry the dust Ai in the vacuum, or dust Ai falls by gravity, or either pulled by an electrostatic force, although it works randomly by Brownian motion,
Since it is in a vacuum, the former two forces dominate. Therefore, we have devised a technique for counting the number of dust particles in a vacuum by utilizing these two forces.

FIG. 14 is a configuration block diagram showing an embodiment of the in-vacuum dust generation monitor 204 of the sensing section 200 of FIG. In FIG. 14, the in-vacuum dust generation monitor 204 is a place 10 that can be a foreign matter generation source in the vacuum processing apparatus 107.
8, the port 221, the negative grid electrode 222, the positive grid electrode 223, and the positive plate electrode 2 are installed.
25, a negative plate electrode 224, an application power source 229, ammeters 226 and 227, and a current counter 228, and a voltage is applied between the negative grid electrode 222 and the positive plate electrode 225 and between the positive grid electrode 223 and the negative plate electrode 224, respectively. A direct current voltage is applied from the power source 229, and the ammeters 226 and 227 are each configured with high sensitivity so that even one electric charge can be measured.

With the above structure, the foreign matter 811 or the foreign matter 8
The operation will be described by taking as an example the case where 12 occurs and jumps to the positive grid electrode 223 or the negative grid electrode 222. Now, when the foreign matter 811 passes through the positive grid electrode 223 and there are electrons excited in the foreign matter 811, the positive grid electrode 223 receives electrons, and at this time, the foreign matter 811 is positively charged and the negative plate Reach the electrode 224. As a result, the power source 229 is applied to the negative plate electrode 2
A current flows between 24 and the positive grid electrode 223, and this current can be detected by the ammeter 226. By counting the number of times this current has flown by the current counter 228, the number of foreign particles 811 that have come in can be counted. Also,
When the foreign matter 812 is in a state of easily emitting electrons when passing through the negative grid electrode 222, the foreign matter 812 receives electrons from the negative grid electrode 222 and is negatively charged and reaches the positive plate electrode 225. At this time, a current flows and is detected by the ammeter 227. By counting the number of times this current has flown by the current counter 228, the number of foreign particles 812 that have come in can be counted.

The in-vacuum dust generation monitor 204 shown in FIG. 14 has both the negative grid electrode type and the positive grid electrode type, but depending on the application, the one having only one of them is sufficiently useful. . In addition, the foreign matter 81
For convenience of description, 1 and 812 are examples of those that easily receive electrons and those that easily release electrons, but this embodiment is not limited to this, and a voltage is forcibly applied. Even the particles of can be counted. However, since the foreign matter described above does not get disturbed by each voltage when flying, it is considered that the foreign matter can be reliably counted.

FIG. 15 is a structural perspective view showing another embodiment of the in-vacuum dust generation monitor 204 of the sensing section 200 of FIG. FIG. 15 shows an example in which the in-vacuum dust generation monitor 204 is installed in the piping system of the vacuum processing apparatus instead of in the vacuum processing apparatus 107 of FIG. This vacuum dust monitor 2
In 04, the negative grid electrode 222 arranged in the pipe 107
The current flowing between the positive grid electrode 225 and the positive electrode 227
The number of foreign matters moving along with the gas flowing in the pipe 109 can be counted by the current counter by detecting with.

[0045]

As described above, according to the first to third aspects of the present invention , when a semiconductor device is manufactured, the generation state of foreign matter on the substrate is different from the minute flaws on the surface of the substrate.
If the generation state of foreign matter is detected separately, while monitoring the state of the processing device based on this detection information, it is possible to easily respond to the subsequent generation of foreign matter. A semiconductor device manufacturing method capable of manufacturing a semiconductor device, and according to claims 4 and 5, a semiconductor device manufacturing apparatus suitable for carrying out the manufacturing method can be obtained. .

[Brief description of drawings]

FIG. 1 is a configuration block diagram showing an embodiment of a method for initiating mass production in a semiconductor device manufacturing process and a foreign matter inspection method for a mass production line and an apparatus therefor according to the present invention.

2 (a) to 2 (d) are configuration perspective views showing an embodiment of the sampling unit of FIG.

3 is a configuration block diagram showing an embodiment of the detection unit in FIG.

FIG. 4 is a block diagram showing the configuration of an embodiment of the analysis unit shown in FIG.

5 is a perspective view showing a mirror surface wafer of the sampling wafer of FIG. 1;

6A, 6B, and 6C are perspective views showing a Si ₃ N ₄ , Poly-Si, and Al film forming wafer of the sampling wafer of FIG. 1.

7 (a) to (d) are perspective views showing a patterned wafer of the sampling wafer of FIG.

8A to 8D are perspective views showing a lapping direction and a scanning direction of the sampling wafer of FIG.

9 is an xy distribution diagram of the work function of the sample of FIG.

10 is a cross-sectional view of the sample of FIG.

11 is a diagram showing the relationship between the AFM tip sample distance and the atomic force of FIG.

FIG. 12 is a relationship diagram of α, β and φ of FIG.

13 is a diagram showing the relationship between the tunnel current and the atomic force in FIG.

14 is a configuration block diagram showing an embodiment of a dust in-vacuum monitor of the sensing unit of FIG.

15 is a configuration perspective view showing another embodiment of the in-vacuum dust generation monitor of the sensing unit of FIG.

[Explanation of symbols]

100 ... Semiconductor device manufacturing apparatus group, 200 ... Sensing section, 204 ... Vacuum dust generation monitor, 300 ... Utility group, 400 ... Sampling section, 401-405 ... Sampling wafer, 500 ... Detection section, 600 ... Analysis section,
603 ... STM / STS, 700 ... Compatible system, 10
00 ... Mass production start-up and mass production line particle inspection system for semiconductor device manufacturing process, 1001 ... Online particle inspection system, 1002 ... Offline particle inspection system,
531, 532 ... Semiconductor laser, 535, 536 ... Condensing objective lens, 537 ... Inspection object lens, 538 ... Detector, 571 ... Binarization circuit, 572 ... Stage controller, 581 ... Interface chamber, 631 ... AFM chip , 633 ... STM chip, 635 ... STMXYZ fine movement unit, 642 ... Sample STM rough drive unit

Continued front page    (72) Inventor Yukio Mibo               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd. Production Technology Laboratory               Within (72) Inventor Hiroshi Morioka               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd. Production Technology Laboratory               Within (72) Inventor Hiroshi Yamaguchi               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd. Production Technology Laboratory               Within (72) Inventor Makiko Kono               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd. Production Technology Laboratory               Within (72) Inventor Yoshimasa Oshima               292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa               Hitachi, Ltd. Production Technology Laboratory               Within                (56) References JP-A-60-218845 (JP, A)                 JP-A-63-179242 (JP, A)                 Japanese Patent Laid-Open No. 2-16438 (JP, A)                 JP 62-124448 (JP, A)                 JP 62-89336 (JP, A)

Claims (5)

(57) [Claims] 1. A method of manufacturing a semiconductor device, wherein the substrate to be processed is exposed, etched, cleaned, ion-implanted, sputtered or CVD in a first vacuum atmosphere. After the treatment, the treated substrate is carried into a second vacuum atmosphere, and the foreign matter adhering to the surface of the treated substrate is detected separately from the minute flaws on the surface of the substrate, and the foreign matter is detected. A method of manufacturing a semiconductor device, comprising: loading the detected substrate into a third vacuum atmosphere, analyzing the detected foreign matter, and using the analyzed data to identify the element of the analyzed foreign matter. 2. The detection of the foreign matter is performed by irradiating the substrate with light, and reflecting light from the substrate by the irradiation,
2. The manufacturing of a semiconductor device according to claim 1, wherein detection is performed excluding diffracted light from a pattern formed on the substrate, and the detection is performed based on information of the reflected light from the substrate obtained by the detection. Method. 3. The analysis of the foreign matter is performed using any one of a scanning electron microscope, a secondary ion mass spectrometer, a scanning tunneling microscope / spectroscopic device, and an infrared spectroscopic device. A method of manufacturing a semiconductor device according to claim 1. 4. A semiconductor device manufacturing apparatus, which is one of an exposure process, an etching process, a cleaning process, an ion implantation process, a sputtering process, and a CVD process for a substrate to be processed in a first vacuum atmosphere. And a processing apparatus that performs the above processing, and a substrate that has been processed by the processing apparatus is carried into a second vacuum atmosphere to remove foreign matter adhering to the surface of the processed substrate as fine scratches on the surface of the substrate. A foreign matter detecting unit that detects the foreign matter separately and stores the detected foreign matter position as position information based on an alignment mark formed on the substrate to be processed; and a foreign matter position detected and stored by the foreign matter detecting unit. An analysis device for analyzing the foreign matter by locating the foreign matter detected from the processed substrate based on the information in the observation field of view in the third vacuum atmosphere and the data analyzed by the analysis device There are semiconductor devices of a manufacturing apparatus is characterized in that and a processing unit for identifying the elements of the foreign substance said analysis. Wherein said analyzer is a scanning electron microscope, 2
5. The semiconductor device manufacturing apparatus according to claim 4, which is one of a secondary ion mass spectrometer, a scanning tunneling microscope / spectroscope, and an infrared spectrometer.