JP3491373B2 - Light emitting element, light emitting diode and laser diode - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a short wavelength light emitting device such as a light emitting diode or a laser diode using III-V nitride, which is used in, for example, a reader for a high density optical disk.

[0002]

2. Description of the Related Art A III-V group nitride having a wurtzite crystal structure is a direct transition type semiconductor having a wide forbidden band, and thus has been attracting attention as a light emitting device material having a short wavelength. In particular, gallium nitride (GaN) and its mixed crystals have been actively studied for a long time. Recently, blue and blue-green LEDs (light emitting diodes) using gallium nitride compound semiconductors
Is expected to be put into practical use, and the next step is expected to be the practical application of short-wavelength LDs (laser diodes) used in readers for high-density optical discs. III-V group nitrides having a wurtzite crystal structure include GaN, AlN (aluminum nitride), InN (indium nitride) BN (boron nitride)
Etc., and mixed crystals of these, and the band gap can be changed by changing the difference in the substance or the composition ratio of the mixed crystals.

When used in a light emitting device such as an LED or LD, it is necessary to grow a single crystal film of these substances on a substrate. The above-mentioned III-V group nitride is a large single crystal used as a substrate. Therefore, heteroepitaxial growth in which a single crystal film is grown on a heterogeneous substrate is used. Conventionally, as a substrate for heteroepitaxial growth of these materials, the C-plane ((00
(01) plane), (111) plane of Si single crystal, (0001) plane of 6H—SiC single crystal, etc. have been used. Among these, sapphire single crystal is the most commonly used because it can grow a single crystal film of a gallium nitride-based compound semiconductor having good crystallinity and is relatively inexpensive.

A red light emitting diode using a GaAs compound semiconductor or an InP compound semiconductor has been put into practical use as an LD, and a blue light emitting diode using a ZnSe compound semiconductor is in the research stage. There are no reports on LDs using group nitrides. Since a light emitting element, especially an LD, generates a large amount of heat when emitting light, it is desirable to use a substrate having a large thermal conductivity in order to improve heat dissipation. However, a substrate on which a single crystal film of a semiconductor material for a light emitting device can be crystal-grown does not have sufficiently high thermal conductivity. ing.

As an example of growing a semiconductor material on a substrate having a large thermal conductivity, a semiconductor single crystal film is formed on a diamond single crystal substrate as shown in Japanese Patent Laid-Open No. 64-42813. There is something. This is a thin film single crystal substrate characterized in that at least one single crystal layer made of at least one kind of substance selected from gallium nitride, indium nitride, aluminum nitride and the like is formed on a diamond single crystal substrate. It is an object of the present invention to provide a substrate having a high thermal conductivity, a low thermal expansion coefficient, and excellent heat resistance and environmental resistance.

[0006]

Problems to be Solved by the Invention Sapphire, Si, Si, which has been conventionally used for growing a single crystal film of III-V group nitride,
Since substrate materials such as SiC do not have sufficiently high thermal conductivity,
For use in a light emitting device, it is necessary to bond it to a diamond single crystal heat sink. In particular, the most commonly used sapphire substrate has extremely low thermal conductivity and has no conductivity, so that it is difficult to arrange the electrodes when bonding to a heat sink. JP-A-64
The technology of the -42813 publication does not particularly limit the substrate plane orientation of the diamond single crystal for growing the single crystal film,
The (100) plane, which is easy to polish, is preferred. Further, there is no description about the crystal orientation of the single crystal film to be grown.

[0007]

In order to realize a short-wavelength light emitting device using a III-V group nitride, the inventors of the present invention have III-V group nitride with good crystallinity on a substrate having a large thermal conductivity. As a result of repeated experiments for growing a crystalline single crystal film, I having good crystallinity on the (111) plane of the diamond single crystal substrate.
It has been found that it is possible to grow II-V nitride single crystal films. Further, in order to grow a III-V nitride single crystal film excellent in crystallinity and film surface smoothness, a III-V nitride buffer layer was grown at low temperature on the (111) plane of a diamond single crystal substrate. Later, a structure in which a III-V nitride semiconductor single crystal film is further grown on this is proposed.

[0008]

According to the present invention, a diamond having an extremely high thermal conductivity is used as a substrate, and a group III-V nitride is grown on the (111) plane of a diamond single crystal to grow a single crystal film having excellent crystallinity. It has been realized and realized a structure with good heat dissipation suitable for a light emitting device of short wavelength. The light emitting device of the present invention includes a light emitting diode (LED) and a laser diode (LD). In the present invention, a diamond single crystal is used as a substrate for growing a group III-V nitride single crystal film. Since it is expected that the driving power of the light emitting device using the III-V group nitride, especially the LED and the LD, will be large, a structure having particularly good heat dissipation is required.
Diamond has a much higher thermal conductivity than sapphire, Si, and SiC that have been used as conventional substrates, so it has a very good heat dissipation when a light emitting element is formed, and it is not necessary to use a heat sink, so the cost is small. can do.

In particular, since the LD using the III-V compound is expected to have a large oscillation threshold current and a large driving voltage and a very large amount of heat generation, the structure of the present invention is extremely effective. As the diamond single crystal used for the substrate, either natural or high-pressure artificial synthesis can be used.
The high-pressure artificial synthesis is preferable because it can be used by adding conductivity during the synthesis.
As the high-pressure artificial synthetic diamond having conductivity, one having boron or aluminum or both of them as impurities and having p-type conductivity can be used. By using such a conductive diamond single crystal for the substrate, the electrodes can be directly attached to the substrate, so that the electrodes can be easily arranged and the element can be easily formed.

Since the (111) plane of the diamond single crystal has an atomic arrangement of three times, the C-plane of the III-V group single crystal film of the wurtzite crystal structure having the same atomic arrangement of three times (((0001 The () plane) can be epitaxially grown so as to be parallel to the (111) plane of the diamond single crystal, and a single crystal thin film having good crystallinity can be obtained. At this time, the crystal orientation of the III-V group nitride is
<11-20> Crystal axis is <110 of diamond single crystal
> Align in one direction so that it is parallel to the crystal axis. I of the present invention
II-V group nitride single crystal films are diamond single crystal and I
It is shown that the above crystal orientation relationship is established between the II-V group nitride films, and the case where crystal grain boundaries or domains are present is also included in the scope of the invention.

The diamond used in the present invention has a surface roughness of the surface on which the group III-V nitride film is formed in order to grow a group III-V nitride film excellent in crystallinity and film surface smoothness. Since it is preferably 0.1 μm or less,
Use those that have been mechanically polished. Oxygen is adsorbed on the diamond surface processed in this way, and the unique structure of the diamond crystal is often not exposed on the surface. Therefore, it is more preferable to perform surface hydrogen termination treatment. As a method of terminating surface hydrogen, there is a method of using hydrogen plasma using microwaves, but as long as it is a method of exciting hydrogen atoms and producing active hydrogen radicals, known methods such as a plasma method and a hot filament method can be used. Can be used.

It is also possible to have a structure in which a diamond single crystal film having conductivity is vapor-deposited on a diamond single crystal substrate, and a III-V group nitride single crystal film is further formed thereon. With such a structure, the electrode can be taken from the conductive diamond single crystal film. The diamond single crystal film having conductivity has a p-type conductivity and contains at least one element selected from boron, aluminum and gallium as impurities, or phosphorus, arsenic, sulfur, antimony, selenium, It is possible to use a material that contains at least one element selected from chlorine and lithium as an impurity and exhibits n-type conductivity.

Also in this case, the (111) plane is used as the substrate surface on which the diamond single crystal film is grown, and the (111) plane of the diamond single crystal substrate and the (111) plane of the diamond single crystal film are parallel to each other. Grow a single crystal film. As a method of growing a diamond single crystal film,
Known methods such as a hot filament method and a microwave plasma CVD method can be used. As a method for adding an impurity to the diamond single crystal, a known method such as a method for adding a raw material for high-pressure synthesis, a method for introducing a gas containing an impurity element during vapor phase synthesis, or an ion implantation method may be used.

A group III-V nitride single crystal film is grown on the (111) plane of the diamond single crystal substrate or on the (111) plane of the diamond single crystal film formed on the diamond single crystal substrate. In the present invention, a group III-V nitride having a wurtzite crystal structure, for example, GaN, AlN, B
N, InN and Al _x Ga _(1-x) N, In _x Ga _(1-x) N, B _x Ga _(1-x) N,
A mixed crystal of B _x Al _(1-x) N, In _x Al _(1-x) N, B _x In _(1-x) N, or the like is used. As the mixed crystal, in addition to the ternary mixed crystal given as an example, it is also possible to use a quaternary or a multi-element mixed crystal.

These III-on diamond single crystals
As a method for growing a group V nitride single crystal film, MBE is used.
Known methods used for forming these single crystal films on a substrate which has been conventionally used, such as a sputtering method, a MOCVD method, a sputtering method, and a vacuum deposition method can be used. In order to grow a single crystal film, it is necessary to heat the substrate to a high temperature. The substrate temperature at which a single crystal film can be grown depends on the type of film to be grown and the film formation method, but is generally 500 ° C to 130 ° C.
It is between 0 ° C. In order to grow a group III-V nitride single crystal film excellent in crystallinity and smoothness of the film surface, a low temperature growth buffer layer of group III-V nitride is formed on a substrate, and a single crystal is formed on the buffer layer. It is further desirable to form a film. As the low-temperature growth buffer layer, any III-V group nitride having a wurtzite type crystal structure can be used, and it is not always necessary to use the same material as the single crystal film grown thereon.

As the method for forming the low temperature growth buffer layer, the same method as the method for forming the group III-V nitride single crystal film described above may be used, but the substrate temperature is higher than that for growing the single crystal film. Therefore, it is necessary to lower the thickness and grow an amorphous or polycrystalline film. The substrate temperature for forming the low temperature growth buffer layer varies depending on the type of film to be grown and the film forming method, but is generally between 20 ° C and 900 ° C. The low-temperature growth buffer layer is amorphous or polycrystal when the buffer layer is formed, but usually changes to a single crystal when the substrate temperature is raised to form a single crystal film thereon.

In the present invention, the III-V nitride single crystal film is usually used by controlling the conductivity by adding impurities. The nitride single crystal film of the present invention exhibits n-type conductivity by adding at least one selected from the group consisting of silicon, tin, oxygen, sulfur, selenium, tellurium, etc. as impurities, and zinc, beryllium, magnesium, potassium, etc. It is possible to impart p-type conductivity by adding at least one selected from the above. The low-temperature growth buffer layer can also be used by controlling the conductivity by adding impurities, like the III-V nitride single crystal film. By forming a structure in which a group III-V nitride single crystal film is formed on a diamond single crystal substrate as described above, the band gap is changed by further changing the composition ratio of the material and the mixed crystal. A light emitting element such as a light emitting diode or a laser diode can be formed by forming a structure in which a group-V nitride is stacked and forming an electrode.

[0018]

【Example】

(Example 1) Using a high-pressure artificial synthetic diamond single crystal (111) surface, which has boron as an impurity and has a p-type conductivity of 25 Ω · cm at room temperature, as a substrate, the surface of which has been polished flat and washed with an organic solvent. And subsequent washing with a 10% aqueous solution of hydrogen chloride. Using this substrate, a light emitting diode having an In _x Ga _(1-x) N active layer having the structure shown in FIG. 3 was formed. The MOCVD method was used to grow the III-V nitride film under atmospheric pressure. First, p-type G on a (111) plane of a diamond single crystal at a substrate temperature of 1000 ° C.
An aN film was grown. H ₂ as a carrier gas at a flow rate of 10 l / min, NH ₃ as a raw material, TMG (trimethylgallium),
Cp ₂ Mg (biscyclopentadiethyl magnesium) was introduced into the reaction chamber at a flow rate of 4.0 l / min, 30 μmol / min, and 3.6 μmol / min, respectively, and grown to 4 μm for 60 minutes.

Next, the substrate temperature is set to 800 ° C. and n is formed on the p-type GaN film.
A type In _x Ga _(1-x) N film was grown. N ₂ as carrier gas
Gas at a flow rate of _{10l / min, NH 3, TMI} ( trimethyl indium) as the raw material, TMG, SiH ₄ (H ₂ dilution, concentration 10 ppm), respectively 4.0l / min, 24μmol / min, 2μmol / min, 1nmol / m
It was introduced into the reaction chamber at a flow rate of in, and was grown to 20 nm for 7 minutes.

Next, the substrate temperature was set to 1000 ° C. again, and n-type In _x Ga
_An n-type GaN film was grown on the _(1-x) N film. The gas used for growth was Cp ₂ Mg instead of SiH ₄ (H ₂ diluted, concentration 10 ppm) at 4 nmo.
The procedure is the same as that for growing the p-type GaN single crystal film except that l / min is applied. It was grown for 15 minutes to a film thickness of 0.8 μm. After the above growth, annealing treatment was performed at 700 ° C. in an N ₂ atmosphere.

Next, an Al electrode is formed on the uppermost n-type GaN film and on the back surface of the p-type diamond substrate by a sputtering method.
Formed D. Prepare samples during each process R
When evaluated using HEED, p-type GaN film, n-type In _x Ga
_{Both the (1-x)} N film and the n-type GaN film are single crystal films having a wurtzite crystal structure, and the (0001) plane is grown parallel to the (111) plane of the diamond single crystal substrate. It has been found. When the LED characteristics were evaluated at room temperature, it was 440
Blue emission having a peak wavelength in nm was confirmed. The device was made to emit light continuously for one hour, but the temperature of the device did not rise enough to affect the device performance, and performance deterioration such as decrease in brightness did not occur.

Example 2 A high-pressure artificial synthetic diamond single crystal (111) containing boron as an impurity whose surface is flatly polished and having p-type conductivity with a specific resistance of 25 Ω · cm at room temperature.
Using the surface as a substrate, cleaning was performed in the same manner as in Example 1.
In _0.06 Ga _0.94 having the structure shown in FIG. 4 using this substrate
A laser diode having N as an active layer was formed. III-
The MOCVD method was used to grow the group V nitride film under atmospheric pressure. First, a low temperature growth buffer layer of p-type GaN was grown on a (111) plane of a diamond single crystal substrate at a substrate temperature of 500 ° C. H ₂ as carrier gas at a flow rate of 10 l / min, NH ₃ as raw materials, TMG (trimethylgallium), Cp ₂ M
g (biscyclopentadiethylmagnesium) was introduced into the reaction chamber at a flow rate of 4.0 l / min, 30 μmol / min and 3.6 μmol / min, respectively, and grown to 25 nm.

Next, with the introduced gas as it is, the substrate temperature is adjusted to 10
The temperature is raised to 00 ℃ and the p-type GaN film is deposited on the buffer layer for 60 minutes.
μm was grown.

Next, a p-type Al _0.15 Ga _0.85 N film was grown on the p-type GaN film. With the substrate temperature at 1000 ℃, NH ₃ and T as raw materials
MA (trimethylaluminum), TMG, Cp ₂ Mg respectively
It was introduced into the reaction chamber at a flow rate of 4.0 l / min, 6 μmol / min, 24 μmol / min, 3.6 μmol / min, and grown for 0.15 μm in 3 minutes.

Next, the substrate temperature is set to 800 ° C. and p-type Al _0.15 Ga
An In _0.06 Ga _0.94 N film doped with Zn was grown on the _0.85 N film. N ₂ gas as a carrier gas at a flow rate of 10 l / min, NH ₃ as a raw material, TMI (trimethylindium), TMG, DEZ
(Diethyl zinc) 4.0l / min, 17μmol / mi
It was introduced into the reaction chamber at a flow rate of n, 1.0 μmol / min and 10 nmol / min, and grown to 50 nm for 15 minutes.

Next, the substrate temperature is set to 1000 ° C. again, and Zn doping is performed.
An n-type Al _0.15 Ga _0.85 N film was grown to 0.15 μm on the In _0.06 Ga _0.94 N film. The film forming conditions were p-type Al _0.15 G except that the raw material was changed to Cp ₂ Mg and SiH ₄ (H ₂ dilution, concentration 10 ppm) was 4 nmol / min.
a _0.85 N _Same as when growing film.

Next, n-type GaN was grown on the n-type Al _0.15 Ga _0.85 N film. The gas used for the growth was replaced with Cp ₂ Mg instead of SiH ₄ (H
₂ dilution, except that the concentration 10 ppm) was supplied 4 nmol / min is the same as when p-type GaN film growth. It was grown for 7.5 minutes to obtain a film thickness of 0.5 μm. After the above growth, 700 ℃ in N2 atmosphere
Was annealed.

Next, the resonator is formed by processing the nitride film layer by reactive dry etching.
An LD was formed by forming an Al electrode on the p-type GaN film and on the back surface of the p-type diamond substrate by a sputtering method.

Prepare a sample during each process and RH
When evaluated using EED, p-type GaN film, p-type Al _0.15 Ga
_0.85 N film, Zn-doped In _0.06 Ga _0.94 N film, n-type Al _0.15 Ga _0.85 N
It was found that both the film and the n-type GaN film were single crystal films having a wurtzite crystal structure, and the (0001) plane was grown parallel to the (111) plane of the diamond single crystal substrate. When LD characteristics were evaluated at room temperature, laser emission of blue light emission having a peak wavelength at 450 nm was confirmed.
The device was made to emit light continuously for one hour, but the temperature of the device did not rise enough to affect the device performance, and performance deterioration such as decrease in brightness did not occur.

Example 3 Using the insulating high-pressure artificial synthetic diamond single crystal (111) surface whose surface was flatly polished as a substrate, cleaning was performed in the same manner as in Example 1. Using this substrate, a light emitting diode having an active layer of In _0.06 Ga _0.94 N having the structure shown in FIG. 5 was formed. The MOCVD method was used to grow the III-V nitride film under atmospheric pressure. First, a 1 μm-thick p-type diamond single crystal film was grown on the (111) plane of a diamond single crystal by the microwave plasma CVD method. CH ₄ , B ₂ H ₆ , and H ₂ in a quartz tube 1
The growth was performed at a microwave output of 400 W under a pressure ratio of 50 Torr with a flow ratio of 0 ³ : 1: 10 ⁵ . From the evaluation by RHEED, it was found that the diamond film was a single crystal and the (111) plane was epitaxially grown parallel to the (111) plane of the diamond single crystal substrate.

Next, a substrate temperature of 50 is applied on the diamond single crystal film.
A low-temperature growth buffer layer of p-type GaN was grown to 25 nm at 0 ° C. The film forming conditions are the same as in Example 2. Then change the substrate temperature
The temperature was raised to 1000 ° C., and a p-type Al _0.15 Ga _0.85 N film was grown to 0.15 μm on the buffer layer. The film forming conditions are the same as in Example 2. Next, the substrate temperature was set to 800 ° C., and a Zn-doped In _0.06 Ga _0.94 N film was grown to a thickness of 50 nm on the p-type Al _0.15 Ga _0.85 N film.
The film forming conditions are the same as in Example 2. Then the substrate temperature again
1000 ° C, n-type Al _0.15 Ga on Zn-doped In _0.06 Ga _0.94 N film
_{A 0.85} N film was grown to 0.15 μm. The film forming conditions are the same as in Example 2. Next, 0.5 μm of n-type GaN was deposited on the n-type Al _0.15 Ga _0.85 N film.
I grew it. The film forming conditions are the same as in Example 2. After the above growth, annealing treatment was performed at 700 ° C. in an N ₂ atmosphere.

Next, after the nitride film layer is processed by reactive dry etching to attach an electrode to the p-type diamond single crystal film, the uppermost n-type GaN film and the p-type diamond single crystal film are sputtered. An LED was formed by forming an Al electrode. Prepare samples during each process RHEE
When evaluated using D, the p-type Al _0.15 Ga _0.85 N film, the Zn-doped In _0.06 Ga _0.94 N film, the n-type Al _0.15 Ga _0.85 N film, and the n-type GaN film are all single crystals having a wurtzite crystal structure. It became a film, and it was found that the (0001) plane grew parallel to the (111) plane of the diamond single crystal substrate. When the LED characteristics were evaluated at room temperature, blue light emission having a peak wavelength at 450 nm was confirmed. The device was made to emit light continuously for one hour, but the temperature of the device did not rise enough to affect the device performance, and performance deterioration such as decrease in brightness did not occur.

(Example 4) Using the insulating high-pressure artificial synthetic diamond single crystal (111) surface whose surface was polished flat as a substrate, cleaning was performed in the same manner as in Example 1. Using this substrate, a laser diode having an In _0.06 Ga _0.94 N active layer having the structure shown in FIG. 6 was formed. In the same manner as in Example 3, after forming a diamond single crystal film on the (111) plane of the diamond single crystal and further growing each layer of III-V group nitride, annealing treatment was performed at 700 ° C. in N 2 atmosphere. went.

Next, a resonator is formed by processing the nitride film layer by reactive dry etching.
An LD was formed by forming an Al electrode on the p-type GaN film and the p-type diamond single crystal film by the sputtering method. Samples in the middle of each step were prepared and evaluated using RHEED, p-type Al _0.15 Ga _0.85 N film, Zn-doped In _0.06 Ga _0.94 N film, n
Type Al _0.15 Ga _0.85 N film and n-type GaN film are all single crystal films having a wurtzite crystal structure, and the (0001) plane is grown parallel to the (111) plane of the diamond single crystal substrate. It has been found. When LD characteristics were evaluated at room temperature, laser emission of blue light emission having a peak wavelength at 450 nm was confirmed. The device was made to emit light continuously for one hour, but the temperature of the device did not rise enough to affect the device performance, and performance deterioration such as decrease in brightness did not occur.

[0035]

As described above, according to the present invention, it is possible to realize a light emitting device such as a light emitting diode for short wavelength or a laser diode using a group III-V nitride having good heat dissipation. .

[Brief description of drawings]

FIG. 1 is a diagram showing a structure according to claim 1, claim 2 and claim 3 of the present invention.

FIG. 2 is a diagram showing a structure according to claims 4, 5, and 6 of the present invention.

FIG. 3 is a diagram showing a structure of a light emitting diode according to a first embodiment of the present invention.

FIG. 4 is a diagram showing a structure of a laser diode according to a second embodiment of the present invention.

FIG. 5 is a diagram showing a structure of a light emitting diode according to a third embodiment of the present invention.

FIG. 6 is a diagram showing a structure of a laser diode according to a fourth embodiment of the present invention.

[Explanation of symbols]

1: Diamond single crystal substrate 2: III-V group nitride single crystal film 3: Diamond single crystal substrate 4: Diamond single crystal film 5: III-V group nitride single crystal film 6: Electrode 7: p-type diamond single crystal Substrate 8: p-type GaN single crystal film 9: n-type In _x Ga _(1-x) N single crystal film 10: n-type GaN single crystal film 11: electrode 12: electrode 13: p-type diamond single crystal substrate 14: p -Type GaN buffer layer 15: p-type GaN single crystal film 16: p-type Al _0.15 Ga _0.85 N single crystal film 17: Zn-doped In _0.06 Ga _0.94 N single crystal film 18: n-type Al _0.15 Ga _0.85 N single crystal film 19: n-type GaN single crystal film 20: electrode 21: diamond single crystal substrate 22: p-type diamond single crystal film 23: p-type GaN buffer layer 24: p-type Al _0.15 Ga _0.85 N single-crystal film 25: Zn-doped In _0.06 Ga _0.94 n single crystal film 26: n-type Al _0.15 Ga _0.85 n single crystal film 27: n-type GaN single crystal film 28: electrode 29: electrode 30: diamond single Crystal substrate 31: p-type diamond single crystal film 32: electrode 33: p-type Al _0.15 Ga _0.85 N single crystal film 34: Zn-doped In _0.06 Ga _0.94 N single crystal film 35: n-type Al _0.15 Ga _0.85 N single crystal film 36 : N-type GaN single crystal film 37: electrode 38: electrode 39: p-type GaN buffer layer

─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-64-42813 (JP, A) JP-A-6-216051 (JP, A) JP-A-6-326416 (JP, A) JP-A-5- 152204 (JP, A) JP-A-3-77384 (JP, A) JP-A-4-240784 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 33/00 H01S 5 / 00-5/50

Claims (7)

(57) [Claims] 1. A diamond single crystal substrate (1) comprising (11)
1) Group III-V nitride single crystal film having one type of wurtzite crystal structure selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and mixed crystals of these substances on the surface 1) (2) Low-temperature growth of III-V group nitride having a wurtzite crystal structure of one kind selected directly or from gallium nitride, aluminum nitride, boron nitride, indium nitride and mixed crystals of these substances. A structure formed via a buffer layer, wherein the C-plane of the III-V nitride single crystal film is formed parallel to the (111) plane of the diamond single crystal substrate. Light emitting element. 2. A diamond single crystal substrate (1) (11
1) Group III-V nitride single crystal film having one type of wurtzite crystal structure selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and mixed crystals of these substances on the surface 1) (2) Low-temperature growth of III-V group nitride having a wurtzite crystal structure of one kind selected directly or from gallium nitride, aluminum nitride, boron nitride, indium nitride and mixed crystals of these substances. A structure formed via a buffer layer, wherein the C-plane of the III-V nitride single crystal film is formed parallel to the (111) plane of the diamond single crystal substrate. Light emitting diode. 3. A diamond single crystal substrate (1) having (11
1) Group III-V nitride single crystal film having one type of wurtzite crystal structure selected from the group consisting of gallium nitride, aluminum nitride, boron nitride, indium nitride, and mixed crystals of these substances on the surface 1) (2) Low-temperature growth of III-V group nitride having a wurtzite crystal structure of one kind selected directly or from gallium nitride, aluminum nitride, boron nitride, indium nitride and mixed crystals of these substances. A structure formed via a buffer layer, wherein the C-plane of the III-V nitride single crystal film is formed parallel to the (111) plane of the diamond single crystal substrate. Laser diode. 4. (11) of a diamond single crystal substrate (3)
The diamond single crystal film (4) is formed on the (1) plane so that the (111) plane of the diamond single crystal film is parallel to the (111) plane of the diamond single crystal substrate, and gallium nitride or aluminum nitride is formed on the diamond single crystal film. Having one kind of wurtzite type crystal structure selected from the group consisting of bismuth, boron nitride, indium nitride and mixed crystals of these substances I
The II-V nitride single crystal film (5) was selected directly or from gallium nitride, aluminum nitride, boron nitride, indium nitride and a mixed crystal composed of these substances.
Having a structure formed through a low-temperature growth buffer layer of III-V nitride having three kinds of wurtzite type crystal structure, wherein the C-plane of the III-V nitride single crystal film is the diamond single crystal film A light emitting device, which is formed parallel to the (111) plane of. 5. A diamond single crystal substrate (3) having (11
The diamond single crystal film (4) is formed on the (1) plane so that the (111) plane of the diamond single crystal film is parallel to the (111) plane of the diamond single crystal substrate, and gallium nitride or aluminum nitride is formed on the diamond single crystal film. Having one kind of wurtzite type crystal structure selected from the group consisting of bismuth, boron nitride, indium nitride and mixed crystals of these substances I
The II-V nitride single crystal film (5) was selected directly or from gallium nitride, aluminum nitride, boron nitride, indium nitride and a mixed crystal composed of these substances.
Having a structure formed through a low-temperature growth buffer layer of III-V nitride having three kinds of wurtzite type crystal structure, wherein the C-plane of the III-V nitride single crystal film is the diamond single crystal film A light emitting diode characterized by being formed parallel to the (111) plane of. 6. (11) of a diamond single crystal substrate (3)
The diamond single crystal film (4) is formed on the (1) plane so that the (111) plane of the diamond single crystal film is parallel to the (111) plane of the diamond single crystal substrate, and gallium nitride or aluminum nitride is formed on the diamond single crystal film. Having one kind of wurtzite type crystal structure selected from the group consisting of bismuth, boron nitride, indium nitride and mixed crystals of these substances I
The II-V nitride single crystal film (5) was selected directly or from gallium nitride, aluminum nitride, boron nitride, indium nitride and a mixed crystal composed of these substances.
Having a structure formed through a low-temperature growth buffer layer of III-V nitride having three kinds of wurtzite type crystal structure, wherein the C-plane of the III-V nitride single crystal film is the diamond single crystal film A laser diode formed in parallel with the (111) plane of. 7. The diamond single crystal film contains at least one substance selected from boron, aluminum and gallium as impurities and has p-type conductivity, or phosphorus, arsenic, sulfur, antimony, selenium, 7. The light emitting device according to claim 4, wherein the light emitting device contains at least one substance selected from chlorine and lithium as an impurity and has n-type conductivity.