JP3461420B2 - Dielectric filter - Google Patents
Dielectric filterInfo
- Publication number
- JP3461420B2 JP3461420B2 JP12025296A JP12025296A JP3461420B2 JP 3461420 B2 JP3461420 B2 JP 3461420B2 JP 12025296 A JP12025296 A JP 12025296A JP 12025296 A JP12025296 A JP 12025296A JP 3461420 B2 JP3461420 B2 JP 3461420B2
- Authority
- JP
- Japan
- Prior art keywords
- short
- conductors
- frequency
- circuit
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
- H01P1/2135—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies using strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、1/4波長共振回
路の誘電体フィルタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a 1/4 wavelength resonant circuit dielectric filter.
【0002】[0002]
【従来の技術】図9は従来の誘電体フィルタの構造を示
す斜視図、図10はその横断面図、図11はその等価回
路図、図12はその電界分布及び磁界分布を示す説明
図、図13はその周波数特性を示す説明図である。図9
及び図10に示すように、略直方体形状の誘電体ブロッ
ク1には、その前面で開口して後方の面に向かって2本
の平行な直方体の有底穴が形成され、その有底穴の内面
にそれぞれ内導体2−1、2−2が形成されている。し
たがって、図10に示すように、誘電体ブロック1の水
平断面は略Eの字形に形成されている。また、誘電体ブ
ロック1の外周面には外導体6が形成され、更に、誘電
体ブロック1の前面の全体には内導体2−1、2−2と
外導体6とを短絡するための短絡導体5が形成されてい
る。また、誘電体ブロック1の両側面には内導体2−
1、2−2に接続するためにそれぞれ入出力電極4−
1、4−2が設けられていると共に、穴が形成されてそ
の穴の内面に接続導体3−1、3−2が形成されてい
る。なお、他の従来例として内導体2−1、2−2と入
出力電極4−1、4−2を直接接続する代わりに、容量
接続したものも知られている。このような誘電体ブロッ
ク1は、マイクロ波用の誘電体材料をプレス加工や射出
成形等する方法で製造され、導体や電極は導電性ペース
トを焼付けたり、無電解メッキ等の方法で形成される。2. Description of the Related Art FIG. 9 is a perspective view showing the structure of a conventional dielectric filter, FIG. 10 is a cross sectional view thereof, FIG. 11 is an equivalent circuit diagram thereof, and FIG. 12 is an explanatory view showing its electric field distribution and magnetic field distribution. FIG. 13 is an explanatory diagram showing the frequency characteristic. Figure 9
As shown in FIG. 10, the substantially rectangular parallelepiped-shaped dielectric block 1 is formed with two parallelepiped bottomed holes that open at the front surface and face toward the rear surface. Inner conductors 2-1 and 2-2 are formed on the inner surfaces, respectively. Therefore, as shown in FIG. 10, the horizontal cross section of the dielectric block 1 is formed in a substantially E shape. Further, the outer conductor 6 is formed on the outer peripheral surface of the dielectric block 1, and further, the entire front surface of the dielectric block 1 is short-circuited to short-circuit the inner conductors 2-1 and 2-2 and the outer conductor 6. The conductor 5 is formed. In addition, the inner conductor 2- is provided on both side surfaces of the dielectric block 1.
Input / output electrodes 4-to connect to 1 and 2-2, respectively.
1, 4-2 are provided, a hole is formed, and connection conductors 3-1 and 3-2 are formed on the inner surface of the hole. As another conventional example, there is also known one in which the inner conductors 2-1 and 2-2 and the input / output electrodes 4-1 and 4-2 are capacitively connected instead of being directly connected. Such a dielectric block 1 is manufactured by a method such as pressing or injection molding a dielectric material for microwaves, and the conductors and electrodes are formed by baking a conductive paste or electroless plating. .
【0003】この誘電体ブロック1は2個の内導体2−
1、2−2の一端が外導体6に短絡され、他端が容量素
子で終端されているので1/4波長型の並列共振回路を
構成し、その等価回路は図11に示すように共振線路8
−1、8−2と終端容量7−1、7−2で表すことがで
きる。ここで、共振線路8−1、8−2はそれぞれ内導
体2−1、2−2に相当し、また、終端容量7−1、7
−2はそれぞれ内導体2−1、2−2の開放端側(穴の
底面)と外導体6の間に形成される容量である。This dielectric block 1 has two inner conductors 2-
Since one end of each of 1 and 2-2 is short-circuited to the outer conductor 6 and the other end is terminated by a capacitive element, a quarter-wave type parallel resonant circuit is formed, and its equivalent circuit is resonant as shown in FIG. Track 8
-1, 8-2 and termination capacitors 7-1, 7-2. Here, the resonance lines 8-1 and 8-2 correspond to the inner conductors 2-1 and 2-2, respectively, and the terminating capacitors 7-1 and 7-2.
-2 is a capacitance formed between the open ends of the inner conductors 2-1 and 2-2 (bottom surface of the hole) and the outer conductor 6, respectively.
【0004】[0004]
【発明が解決しようとする課題】図12(a)は共振周
波数f0における磁界、電界の分布曲線を示し、図12
(b)は図13に示す減衰極の周波数ftにおける磁
界、電界の分布曲線を示している。図12(a),
(b)において符号7は終端容量、符号8は共振線路を
示し、また、横軸は電界、磁界の強度を示し、縦軸は線
路8における位置を示している。そして、磁界分布曲線
は短絡端8aを原点とする余弦波曲線で表すことがで
き、電界分布曲線は短絡端8aを原点とする正弦波曲線
で表すことができる。FIG. 12A shows distribution curves of magnetic field and electric field at the resonance frequency f 0 .
13B shows a distribution curve of the magnetic field and the electric field at the frequency f t of the attenuation pole shown in FIG. FIG. 12 (a),
In (b), reference numeral 7 indicates a terminating capacitance, reference numeral 8 indicates a resonance line, the horizontal axis indicates the strength of the electric field and the magnetic field, and the vertical axis indicates the position on the line 8. The magnetic field distribution curve can be represented by a cosine wave curve whose origin is the short-circuit end 8a, and the electric field distribution curve can be represented by a sine wave curve whose origin is the short-circuit end 8a.
【0005】この場合、斜線部a,bの各面積はそれぞ
れ共振線路8の磁界の強さ、電界の強さを表している。
また、点cは終端容量7で短縮した分も含む共振周波数
f0における位相が90度になる位置である。即ち、図
12(a)は短絡端8aと点cの間をλ/4とする共振
周波数f0における電磁界分布を示している。図から明
らかなように、共振周波数f0においては斜線部aの面
積が斜線部bより大きい。これは、共振線路8内では磁
界結合の方が支配的であることを示している。In this case, the areas of the shaded portions a and b represent the magnetic field strength and the electric field strength of the resonance line 8, respectively.
Further, the point c is a position where the phase at the resonance frequency f 0 including the amount shortened by the terminal capacitance 7 becomes 90 degrees. That is, FIG. 12A shows the electromagnetic field distribution at the resonance frequency f 0 where λ / 4 is between the short-circuited end 8a and the point c. As is clear from the figure, the shaded area a is larger than the shaded area b at the resonance frequency f 0 . This indicates that the magnetic field coupling is dominant in the resonance line 8.
【0006】これに対し、図12(b)に示すように斜
線部aの面積(磁界の強さ)と斜線部bの面積(電界の
強さ)が等しくなる磁界分布曲線、電界分布曲線を描く
ことができる周波数において損失が無限大(減衰極)と
なる。図12(b)から明らかなように、短絡端8aと
共振線路8の長さに相当する点d間をλ/4とする周波
数ftにおいて斜線部a、bの面積が等しくなる。そし
て、この点dは基本周波数f0における90度位置より
短い位置に存在する。即ち、通過周波数帯の上側に減衰
極の周波数ftが存在する。On the other hand, as shown in FIG. 12 (b), a magnetic field distribution curve and an electric field distribution curve in which the area of the shaded portion a (strength of magnetic field) and the area of the shaded portion b (strength of electric field) are equal are shown. The loss becomes infinite (attenuation pole) at the frequency that can be drawn. As is apparent from FIG. 12B, the areas of the shaded portions a and b are equal at the frequency f t where λ / 4 is between the short-circuit end 8a and the point d corresponding to the length of the resonance line 8. The point d exists at a position shorter than the 90 degree position at the fundamental frequency f 0 . That is, the attenuation pole frequency f t exists above the pass frequency band.
【0007】図13は上記従来例のバンドパスフィルタ
(BPF)特性を示し、横軸は周波数(0〜6GH
z)、縦軸は減衰量ATT(−80〜0dB)である。
図中、、はそれぞれ基本周波数f0と2次高調波
2f0、3次高調波3f0を示し、また、は前述した減
衰極であってf0<ft<2f0<3f0である。しかしな
がら、このような特性の1/4波長共振器による誘電体
BPFでは、基本周波数f0の3倍、5倍等の奇数倍の
周波数においてスプリアス共振を生じて通過帯となり、
2f0、3f0の周波数に対する減衰が不十分であるとい
う問題点がある(図13ではそれぞれ2f0:−17d
B,3f0:−8dB)。したがって、実際には例えば
2f0、3f0の周波数を阻止するLPFを併用して使用
する必要がある。FIG. 13 shows the bandpass filter (BPF) characteristic of the above conventional example, and the horizontal axis represents frequency (0 to 6 GH).
z), and the vertical axis is the attenuation amount ATT (-80 to 0 dB).
In the figure, indicates the fundamental frequency f 0 , the second harmonic wave 2f 0 , and the third harmonic wave 3f 0 , respectively, and the above-mentioned attenuation poles are f 0 <f t <2f 0 <3f 0 . . However, in the dielectric BPF using the quarter-wave resonator having such a characteristic, spurious resonance occurs at a frequency that is an odd multiple of three times, five times, or the like of the fundamental frequency f 0 and becomes a pass band.
There is a problem that the attenuation for frequencies of 2f 0 and 3f 0 is insufficient (in FIG. 13, 2f 0 : -17d, respectively).
B, 3f 0 : −8 dB). Therefore, it is necessary to actually a combination of the LPF blocks the frequency of, for example, 2f 0, 3f 0 used.
【0008】また、近年の無線通信システムの高周波化
に伴い、局部発振器の発振周波数やイメージ(影像)周
波数が通信周波数より低い場合が多く、これらを排除す
るために通信周波数f0より低い周波数に減衰極を有す
る誘電体フィルタが望まれている。しかしながら、上記
従来例では基本周波数f0の下側に減衰極がないのでこ
れを実現することができない。したがって、局部発振周
波数やイメージ周波数を排除するために別のトラップ回
路が必要となる。With the recent increase in the frequency of wireless communication systems, the oscillation frequency and image (image) frequency of the local oscillator are often lower than the communication frequency, and in order to eliminate them, the frequency is lower than the communication frequency f 0. A dielectric filter having an attenuation pole is desired. However, in the above-mentioned conventional example, since there is no attenuation pole below the fundamental frequency f 0 , this cannot be realized. Therefore, another trap circuit is required to eliminate the local oscillation frequency and the image frequency.
【0009】本発明は上記従来の問題点に鑑み、基本周
波数の上側及び下側の周波数を確実に阻止し、基本周波
数を通過させるバンドパス特性を実現することができる
誘電体フィルタを提供することを目的とする。In view of the above-mentioned conventional problems, the present invention provides a dielectric filter capable of surely blocking frequencies above and below the fundamental frequency and realizing a bandpass characteristic of allowing the fundamental frequency to pass. With the goal.
【0010】[0010]
【課題を解決するための手段】本発明は、誘電体ブロッ
クの内部にあって互いに電磁気的に結合した複数の共振
線路と、複数の共振線路の一端と外導体とをそれぞれ短
絡接続する複数の短絡部接続導体とを有し、かつ、複数
の短絡部接続導体を相互の電磁気的な結合を少なくする
減結合状態に配置して、複数の共振線路とそれに接続さ
れた短絡部接続導体とにより1/4波長共振回路を構成
している。このような構成にすると、それぞれの共振線
路の長さ即ちそのインピーダンスと、それぞれの短絡部
接続導体の長さ即ちそのインピーダンスとを適宜設定す
ることにより、通過周波数の下側周波数領域と上側周波
数領域の双方に減衰極を生じさせることができ、それに
より所望の減衰量を生じさせることができる。According to the present invention, a plurality of resonant lines that are electromagnetically coupled to each other inside a dielectric block, and one end of each of the plurality of resonant lines and an outer conductor are short. A plurality of short-circuit connection conductors that are connected in a short circuit, and a plurality of
The short-circuit connection conductors of the two reduce the electromagnetic coupling with each other
Place in decoupling state and connect multiple resonant lines and
1/4 wavelength resonant circuit with short-circuit connecting conductor
I am doing . With such a configuration , by appropriately setting the length of each resonance line, that is, its impedance, and the length of each short-circuit connecting conductor, that is, its impedance, the lower frequency region of the pass frequency and the upper frequency region
It can give rise to attenuation poles on both the number area, it
A more desired amount of attenuation can be produced.
【0011】[0011]
【発明の実施の形態】本発明の誘電体フィルタは、一つ
の外面を除いた他の外面に外導体を形成した誘電体ブロ
ックと、前記誘電体ブロックの内部にあって互いに電磁
気的に結合した状態に配置された複数の内導体と、前記
一つの外面上にあって前記複数の内導体の一端のそれぞ
れと外導体とをそれぞれ短絡接続する複数の短絡部接続
導体とを備え、前記複数の内導体とそれらに接続された
短絡部接続導体とによりそれぞれ1/4波長共振回路を
構成しており、前記一つの外面上にある前記複数の短絡
部接続導体は、短絡部接続導体相互の電磁気的な結合を
少なくする減結合状態に配置されている構成を有してい
る。このような構成により、基本周波数の上側周波数と
下側周波数を確実に阻止し、基本周波数を通過させるバ
ンドパス特性を実現することができる。BEST MODE FOR CARRYING OUT THE INVENTION One dielectric filter of the present invention is provided .
The outer surface of the dielectric block except the outer surface of the
And inside the dielectric block,
A plurality of inner conductors arranged in an electrically coupled state,
Each of the one ends of the plurality of inner conductors on one outer surface
Multiple short-circuit connections that connect each of these with the outer conductor
A conductor and connected to the inner conductors and the inner conductors
1/4 wavelength resonant circuit with short-circuit connection conductor
Comprising a plurality of said shorts on said one outer surface
Part connection conductors should be electromagnetically coupled to each other.
Has a configuration that is arranged in a decoupled state to reduce
It With such a configuration, it is possible to reliably block the upper frequency and the lower frequency of the fundamental frequency and realize the bandpass characteristic of allowing the fundamental frequency to pass.
【0012】また、本発明の誘電体フィルタは、一つの
外面に開口部が設けられ、前記開口部から前記一つの外
面に対向する外面方向に向かって拡がる複数の平行な有
底穴を有する誘電体ブロックと、前記複数の平行な有底
穴の内側面に沿って形成配置された複数の内導体と、前
記一つの外面上にあって前記複数の内導体の一端のそれ
ぞれと外導体とをそれぞれ短絡接続する複数の短絡部接
続導体とを備え、前記複数の内導体とそれらに接続され
た短絡部接続導体とによりそれぞれ1/4波長共振回路
を構成しており、前記一つの外面上にある前記複数の短
絡部接続導体は、短絡部接続導体相互の電磁気的な結合
を少なくする減結合状態に配置されている構成を有して
いる。このような構成により、基本周波数の上側周波数
と下側周波数を確実に阻止し、基本周波数を通過させる
バンドパス特性を実現することができる。Further, the dielectric filter of the present invention has a single
An opening is provided on the outer surface, and the one outside
Faces parallel to each other and spread in the direction of the outer surface.
A dielectric block having a bottom hole and the plurality of parallel bottomed
A plurality of inner conductors formed and arranged along the inner surface of the hole,
That of one of said plurality of inner conductors on one outer surface
Multiple short-circuit connections that connect each one to the outer conductor
A plurality of inner conductors and are connected to them.
1/4 wavelength resonant circuit with short-circuit connecting conductor
And the plurality of shorts on the one outer surface.
The connection conductors of the junction are electromagnetically coupled to each other.
Has a configuration that is arranged in a decoupled state to reduce
There is. With such a configuration, it is possible to reliably block the upper frequency and the lower frequency of the fundamental frequency and realize the bandpass characteristic of allowing the fundamental frequency to pass.
【0013】この場合、複数の短絡部接続導体における
減結合状態の配置は、誘電体ブロックの一つの端面にお
いて、複数の内導体の一端のそれぞれから放射状に離間
するような方向に延びた状態の配置にしたり、複数の内
導体の一端のそれぞれから放射状に離間するような方向
に延びた窪み内に設けた状態の配置にしたり、複数の内
導体の一端のそれぞれから互いに交差しないような方向
に延び、かつ、周辺に電磁シールド部を形成した状態の
配置にすることが効果的である。In this case, in a plurality of short-circuit connecting conductors
The decoupling arrangement is on one end of the dielectric block.
And radially separate from one end of each of the inner conductors.
To extend in the direction that
Direction that radially separates from each end of the conductor
It can be placed in a recess that extends into
Direction that does not cross each other from one end of the conductor
In the state where the electromagnetic shield is formed around the
It is effective to arrange them.
【0014】[0014]
【実施例】実施例について図面を参照して説明すると、
図1は本発明の第1の実施例に係る誘電体フィルタを示
す斜視図、図2は図1の誘電体フィルタを示す横断面
図、図3は図1の誘電体フィルタの等価回路図、図4は
図1の誘電体フィルタの電界分布及び磁界分布の一例を
示す説明図、図5は図1の誘電体フィルタの周波数特性
の一例を示す説明図である。EXAMPLES Examples will be described with reference to the drawings.
1 is a perspective view showing a dielectric filter according to a first embodiment of the present invention, FIG. 2 is a cross sectional view showing the dielectric filter of FIG. 1, FIG. 3 is an equivalent circuit diagram of the dielectric filter of FIG. 4 is an explanatory diagram showing an example of an electric field distribution and a magnetic field distribution of the dielectric filter of FIG. 1, and FIG. 5 is an explanatory diagram showing an example of frequency characteristics of the dielectric filter of FIG.
【0015】図1及び図2に示すように、本実施例に係
る誘電体ブロック1の前面1−aには短絡部接続導体1
1−1、11−2(マイクロストリップ線路)が形成さ
れており、この点が、誘電体ブロック1の前面の全体に
内導体2−1、2−2と外導体6を短絡するための短絡
導体5を形成した従来例と相違している。詳細に説明す
ると、略直方体の誘電体ブロック1の前面1−aで開口
して後方の面に向かって2本の平行な直方体の有底穴が
前後方向に沿って形成され、この2本の平行な直方体の
有底穴の内面にそれぞれ内導体10−1、10−2が形
成されている。したがって、図2に示すように、誘電体
ブロック1の水平断面は略Eの字形に形成されている。As shown in FIGS. 1 and 2, the short-circuit connecting conductor 1 is formed on the front surface 1-a of the dielectric block 1 according to this embodiment.
1-1 and 11-2 (microstrip lines) are formed, and this point is a short circuit for short-circuiting the inner conductors 2-1 and 2-2 and the outer conductor 6 over the entire front surface of the dielectric block 1. This is different from the conventional example in which the conductor 5 is formed. More specifically, two parallelepiped bottomed holes that are open at the front surface 1-a of the substantially rectangular parallelepiped dielectric block 1 and extend toward the rear surface are formed along the front-rear direction. Inner conductors 10-1 and 10-2 are formed on the inner surfaces of the parallelepiped bottomed holes, respectively. Therefore, as shown in FIG. 2, the horizontal cross section of the dielectric block 1 is formed in a substantially E shape.
【0016】また、誘電体ブロック1の外面のうち、前
面1−aを除く上、下、左、右、後の各面には外導体6
が形成され、したがって、内導体10−1、10−2の
うち、底に相当する領域(開放端)と、相対向する後ろ
の外面の外導体6の間に静電容量が形成される。更に、
誘電体ブロック1の両側面にはそれぞれ内導体10−
1、10−2に接続するための入出力電極4−1、4−
2が設けられていると共に、穴が形成されてその穴の内
面に接続導体3−1、3−2が形成されている。Outer conductors 6 are provided on the upper, lower, left, right and rear surfaces of the outer surface of the dielectric block 1 excluding the front surface 1-a.
Therefore, a capacitance is formed between the region (open end) corresponding to the bottom of the inner conductors 10-1 and 10-2 and the outer conductor 6 on the rear outer surface facing each other. Furthermore,
Inner conductors 10-are formed on both sides of the dielectric block 1.
Input / output electrodes 4-1 and 4-for connecting to 1, 10-2
2 is provided, a hole is formed, and connection conductors 3-1 and 3-2 are formed on the inner surface of the hole.
【0017】そして、短絡部接続導体11−1、11−
2は互いに電磁的に結合しないように(又は粗結合する
ように)、誘電体ブロック1の前面1−aにおいて短絡
部接続導体11−1は内導体10−1の開口から左側に
延びるように、また、短絡部接続導体11−2は内導体
10−2の開口から右側に延びるように形成されてい
る。この短絡部接続導体11−1、11−2の製造方法
は、前面1−aに凹部を形成して前面1−a全面に導体
を形成し、研削加工などにより形成することができ、ま
た、凹部を形成する代わりに前面1−aをパターニング
等して形成するようにしてもよい。なお、図1に示すハ
ッチングは、導体が形成されてない部分を示している。The short-circuit connecting conductors 11-1, 11-
2 so that the short-circuit connection conductor 11-1 extends from the opening of the inner conductor 10-1 to the left side on the front surface 1-a of the dielectric block 1 so as not to be electromagnetically coupled (or coarsely coupled) to each other. Also, the short-circuit connection conductor 11-2 is formed to extend rightward from the opening of the inner conductor 10-2. The method for manufacturing the short-circuit connecting conductors 11-1 and 11-2 can be formed by forming a recess on the front surface 1-a to form a conductor on the entire front surface 1-a and then performing grinding or the like. Instead of forming the concave portion, the front surface 1-a may be formed by patterning or the like. The hatching shown in FIG. 1 indicates a portion where the conductor is not formed.
【0018】図3に示すように、この誘電体フィルタの
等価回路は、短絡部接続線路15−1、15−2と、共
振線路13−1、13−2と終端容量12−1、12−
2を有する1/4波長共振回路であり、短絡部接続線路
15−1、15−2と共振線路13−1、13−2はそ
れぞれ図2に示す短絡部接続導体11−1、11−2と
内導体10−1、10−2に相当する。そして、短絡部
接続線路15−1、15−2の各線路インピーダンスZ
1は共振線路13−1、13−2の各線路インピーダン
スZ2より大きく設定されており(Z1>>Z2)、共振線
路13−1、13−2が電磁気的に結合してBPFとし
て動作する。As shown in FIG. 3, the equivalent circuit of this dielectric filter has short-circuit connection lines 15-1 and 15-2, resonance lines 13-1 and 13-2, and termination capacitors 12-1 and 12-.
2 is a quarter-wavelength resonance circuit having short circuit connecting lines 15-1 and 15-2 and resonance lines 13-1 and 13-2, respectively, which are short circuit connecting conductors 11-1 and 11-2 shown in FIG. And the inner conductors 10-1 and 10-2. Then, each line impedance Z of the short-circuit connection lines 15-1 and 15-2
1 is set to be larger than each line impedance Z 2 of the resonance lines 13-1 and 13-2 (Z 1 >> Z 2 ), and the resonance lines 13-1 and 13-2 are electromagnetically coupled to each other as a BPF. Operate.
【0019】図4及び図5を参照してその動作を説明す
ると、図4に示す縦軸、横軸は前述した図12と同一で
あり、図4(a)は共振周波数f0における分布曲線を
示し、図4(b)は第1の減衰極(図5参照)の周波
数ft1における分布曲線を示し、図4(c)は第2の減
衰極の周波数ft2における分布曲線を示している。ま
た、図中の符号12は終端容量、符号13は共振線路、
符号15は短絡部接続線路を示している。The operation will be described with reference to FIGS. 4 and 5. The vertical axis and the horizontal axis shown in FIG. 4 are the same as those in FIG. 12 described above, and FIG. 4A shows a distribution curve at the resonance frequency f 0 . 4 (b) shows the distribution curve of the first attenuation pole (see FIG. 5) at the frequency ft 1 , and FIG. 4 (c) shows the distribution curve of the second attenuation pole at the frequency ft 2 . There is. Further, in the figure, reference numeral 12 is a terminating capacitance, reference numeral 13 is a resonance line,
Reference numeral 15 indicates a short-circuit connection line.
【0020】本実施例に係る誘電体フィルタの構造も従
来例と同様に1/4波長共振回路であるので、磁界分布
曲線は短絡端15aを原点とする余弦波曲線で表すこと
ができ、電界分布曲線は短絡端15aを原点とする正弦
波曲線で表すことができる。また、図中の点c’は、線
路13及び15と終端容量12で短縮した分も含む共振
周波数f0における位相が90度になる位置である。即
ち、短絡端15aと点c’間をλ/4とする基本周波数
f0における電磁界分布を示すと、図4(a)に示すよ
うになる。ただし、上記構成の場合には、線路13及び
15を有するが、結合しているのは共振線路13のみ
(図示の結合部13a、非結合部15b)であるので、
共振線路13内における磁界及び電界の強さは各曲線の
共振線路13内での強さとなる。なお、図中の斜線部a
の面積が磁界の強さを示し、斜線部bの面積が電界の強
さを示し、図4(a)は一例として磁界結合<電界結合
の場合を示している。Since the structure of the dielectric filter according to this embodiment is also a quarter-wavelength resonance circuit as in the conventional example, the magnetic field distribution curve can be represented by a cosine wave curve having the short-circuit end 15a as the origin, and the electric field The distribution curve can be represented by a sine wave curve whose origin is the short-circuit end 15a. Further, a point c ′ in the figure is a position where the phase at the resonance frequency f 0 including the portions shortened by the lines 13 and 15 and the terminating capacitance 12 becomes 90 degrees. That is, the electromagnetic field distribution at the fundamental frequency f 0 where the distance between the short-circuit end 15a and the point c ′ is λ / 4 is shown in FIG. 4 (a). However, in the case of the above configuration, although the lines 13 and 15 are provided, only the resonance line 13 (the illustrated coupling portion 13a and non-coupling portion 15b) is coupled,
The strength of the magnetic field and the electric field in the resonance line 13 is the strength of each curve in the resonance line 13. The shaded area a in the figure
Indicates the strength of the magnetic field, the area of the shaded portion b indicates the strength of the electric field, and FIG. 4A shows the case of magnetic field coupling <electric field coupling as an example.
【0021】ここで、前述した従来例と同様に、斜線部
aの面積(磁界の強さ)と斜線部bの面積(電界の強
さ)が等しくなる周波数において減衰極が生じる。図4
(b)は両者が等しくなる周波数において位相が90度
になる点eが点c’の近傍に生じることを示している。
この例では、点eは点c’より長い位置に存在し、減衰
極の周波数ft1は通過周波数帯f0の下側にある。そ
の減衰極の周波数ft1は、主に非結合部15bの位置、
即ち短絡部接続線路15−1、15−2の長さ(Z1の
大きさ)で決まり、短絡部接続線路15−1、15−2
を短くすれば、従来例と同じく、減衰極の周波数ft1
を通過周波数帯f0の上側に移動させることができる。Here, similarly to the above-mentioned conventional example, an attenuation pole occurs at a frequency at which the area of the shaded portion a (strength of the magnetic field) and the area of the shaded portion b (strength of the electric field) are equal. Figure 4
(B) shows that the point e where the phase becomes 90 degrees occurs near the point c'at the frequency where both are equal.
In this example, the point e is located longer than the point c ′, and the attenuation pole frequency ft 1 is below the pass frequency band f 0 . The frequency ft 1 of the attenuation pole is mainly the position of the non-coupling portion 15b,
That is, it is determined by the length of the short-circuit connection lines 15-1 and 15-2 (the size of Z 1 ), and the short-circuit connection lines 15-1 and 15-2
If is shortened, the attenuation pole frequency ft 1
Can be moved to the upper side of the pass frequency band f 0 .
【0022】図4(c)は斜線部aの面積と斜線部bの
面積が等しくなる周波数が、2f0近傍にもあり、その
位相が90度になる位置が点fにあることを示してい
る。この点fは点c’の1/2近傍に位置するので、減
衰極の周波数ft2は2f0近傍に生じ、その周波数ft
2は主に結合部13aの位置、即ち、共振線路13−
1、13−2の長さ(Z2の大きさ)で決まる。したが
って、上記構造は、短絡部接続線路15−1と15−2
が結合していないことが条件となる。FIG. 4C shows that the frequency at which the area of the shaded area a and the area of the shaded area b are equal is also in the vicinity of 2f 0 , and the position where the phase becomes 90 degrees is at the point f. There is. Since this point f is located in the vicinity of 1/2 of the point c ′, the frequency ft 2 of the attenuation pole occurs in the vicinity of 2f 0 , and its frequency ft
2 is mainly the position of the coupling portion 13a, that is, the resonance line 13-
It is determined by the length of 1 and 13-2 (size of Z 2 ). Therefore, the above structure has the short-circuit connecting lines 15-1 and 15-2.
The condition is that is not bound.
【0023】次に、図6を参照して第2の実施例を説明
する。この実施例では、短絡部接続線路15−1と15
−2を短くするために短絡部接続線路17−1、17−
2の長さを第1の実施例の短絡部接続線路11−1、1
1−2より短くしたものであり、このために前面1−b
の左右の両端を切り欠いて外導体6−1、6−2を形成
している。Next, a second embodiment will be described with reference to FIG. In this embodiment, the short-circuit connection lines 15-1 and 15
-2 in order to shorten the connection line 17-1, 17-
The length of 2 is set to the short-circuit connection lines 11-1 and 1 of the first embodiment.
It is shorter than 1-2, and for this reason front 1-b
Outer conductors 6-1 and 6-2 are formed by cutting out both left and right ends of the.
【0024】図7に示す第3の実施例では、短絡部接続
線路15−1と15−2の結合度を小さくするために、
短絡部接続導体19−1は内導体18−1の開口から下
方向に、短絡部接続導体19−2は内導体18−2の開
口から上方向に形成されている。In the third embodiment shown in FIG. 7, in order to reduce the degree of coupling between the short circuit connecting lines 15-1 and 15-2,
The short-circuit connection conductor 19-1 is formed downward from the opening of the inner conductor 18-1, and the short-circuit connection conductor 19-2 is formed upward from the opening of the inner conductor 18-2.
【0025】また、図8に示す第4の実施例では、短絡
部接続導体21−1、21−2は共にそれぞれ内導体2
0−1、20−2の開口から下方向に平行に形成されて
いるが、短絡部接続導体21−1と21−2の結合度を
小さくするために、外導体6を短絡部接続導体21−1
と21−2の間(前面部分6−3)まで回り込むように
形成し、また、この前面部分6−3と短絡部接続導体2
1−1と21−2の間には外導体6を形成していない
(図示1−d、1−e)。Further, in the fourth embodiment shown in FIG. 8, the short-circuit connecting conductors 21-1 and 21-2 are both inner conductors 2 respectively.
The outer conductor 6 is formed in parallel downward from the openings 0-1 and 20-2, but in order to reduce the degree of coupling between the short-circuit connecting conductors 21-1 and 21-2, the outer conductor 6 is connected to the short-circuit connecting conductor 21. -1
And 21-2 (front surface portion 6-3) are formed so as to wrap around, and the front surface portion 6-3 and the short-circuit connecting conductor 2 are formed.
The outer conductor 6 is not formed between 1-1 and 21-2 (illustrated 1-d and 1-e).
【0026】このような構造によれば、短絡部接続線路
15−1、15−2等の長さ(即ちZ1の大きさ)と共
振線路13−1、13−2等の長さ(即ちZ2の大き
さ)を任意に組み合わせることにより、通過周波数f0
を変えることなく、減衰極、の周波数ft1、ft2を
変えることができる。したがって、例えば図5に示すよ
うに、ft1<f0<2f0<ft2<3f0のように減衰極
の周波数ft2が2f0と3f0の間にあるBPFを構成
することができ、図5に示す例では2f0においては−
30dB、3f0においては−28dBの減衰量を実現
することができる。また、f0より下側に減衰極を生
じさせることができるので、局部発振周波数やイメージ
周波数がf0より低い場合にも局部発振周波数やイメー
ジ周波数をカットすることができる。According to such a structure, the lengths of the short-circuit connection lines 15-1, 15-2, etc. (that is, the size of Z 1 ) and the lengths of the resonance lines 13-1, 13-2, etc. (that is, Z 1 ). Z 2 ) can be arbitrarily combined to obtain the pass frequency f 0
It is possible to change the frequencies ft 1 and ft 2 of the attenuation pole without changing. Therefore, for example, as shown in FIG. 5, it is possible to construct a BPF in which the frequency ft 2 of the attenuation pole is between 2f 0 and 3f 0 such that ft 1 <f 0 <2f 0 <ft 2 <3f 0. in the 2f 0 the example shown in FIG. 5 -
At 30 dB and 3f 0 , an attenuation amount of −28 dB can be realized. Further, since the attenuation pole can be generated below f 0 , the local oscillation frequency or image frequency can be cut even when the local oscillation frequency or image frequency is lower than f 0 .
【0027】[0027]
【発明の効果】以上説明したように本発明によれば、共
振線路の長さ即ちそのインピーダンスと、短絡部接続線
路の長さ即ちそのインピーダンスを適宜設定することに
より、通過周波数の下側と上側の両側に減衰極を生じさ
せることができ、また、所望の減衰量を生じさせること
ができるので、基本周波数の上側及び下側の周波数を確
実に阻止し、基本周波数を通過させるバンドパス特性を
実現することができる。As described above, according to the present invention, by appropriately setting the length of the resonance line, that is, its impedance, and the length of the short-circuit connecting line, that is, its impedance, the lower and upper sides of the pass frequency can be obtained. Since it is possible to generate attenuation poles on both sides of and the desired amount of attenuation, it is possible to reliably block frequencies above and below the fundamental frequency, and to provide a bandpass characteristic that allows the fundamental frequency to pass. Can be realized.
【図1】本発明の第1の実施例に係る誘電体フィルタを
示す斜視図である。FIG. 1 is a perspective view showing a dielectric filter according to a first embodiment of the present invention.
【図2】図1の誘電体フィルタを示す横断面図である。FIG. 2 is a cross-sectional view showing the dielectric filter of FIG.
【図3】図1の誘電体フィルタの等価回路図である。FIG. 3 is an equivalent circuit diagram of the dielectric filter of FIG.
【図4】図1の誘電体フィルタの電界分布及び磁界分布
の一例を示す説明図である。4 is an explanatory diagram showing an example of an electric field distribution and a magnetic field distribution of the dielectric filter of FIG.
【図5】図1の誘電体フィルタの周波数特性の一例を示
す説明図である。5 is an explanatory diagram showing an example of frequency characteristics of the dielectric filter of FIG.
【図6】本発明の第2の実施例に係る誘電体フィルタを
示す斜視図である。FIG. 6 is a perspective view showing a dielectric filter according to a second embodiment of the present invention.
【図7】本発明の第3の実施例に係る誘電体フィルタを
示す斜視図である。FIG. 7 is a perspective view showing a dielectric filter according to a third embodiment of the present invention.
【図8】本発明の第4の実施例に係る誘電体フィルタを
示す斜視図である。FIG. 8 is a perspective view showing a dielectric filter according to a fourth embodiment of the present invention.
【図9】従来の誘電体フィルタの構造を示す斜視図であ
る。FIG. 9 is a perspective view showing a structure of a conventional dielectric filter.
【図10】図9の誘電体フィルタを示す横断面図であ
る。10 is a cross-sectional view showing the dielectric filter of FIG.
【図11】図9の誘電体フィルタの等価回路図である。11 is an equivalent circuit diagram of the dielectric filter of FIG.
【図12】図9の誘電体フィルタの電界分布及び磁界分
布を示す説明図である。12 is an explanatory diagram showing an electric field distribution and a magnetic field distribution of the dielectric filter of FIG.
【図13】図9の誘電体フィルタの周波数特性を示す説
明図である。FIG. 13 is an explanatory diagram showing frequency characteristics of the dielectric filter of FIG.
1 誘電体ブロック
6 外導体
10−1,10−2,16−1,16−2,18−1,
18−2,20−1,20−1 内導体
11−1,11−2,17−1,17−2,19−1.
19−2,21−1,21−2 短絡部接続導体
12−1,12−2 終端容量
13−1,13−2 共振線路
15−1,15−2 短絡部接続線路1 Dielectric block 6 Outer conductors 10-1, 10-2, 16-1, 16-2, 18-1,
18-2, 20-1, 20-1 Inner conductors 11-1, 11-2, 17-1, 17-2, 19-1.
19-2, 21-1, 21-2 Short-circuit connection conductors 12-1, 12-2 Termination capacitance 13-1, 13-2 Resonance line 15-1, 15-2 Short-circuit connection line
Claims (5)
形成した誘電体ブロックと、前記誘電体ブロックの内部
にあって互いに電磁気的に結合した状態に配置された複
数の内導体と、前記一つの外面上にあって前記複数の内
導体の一端のそれぞれと外導体とをそれぞれ短絡接続す
る複数の短絡部接続導体とを備え、前記複数の内導体と
それらに接続された短絡部接続導体とによりそれぞれ1
/4波長共振回路を構成しており、前記一つの外面上に
ある前記複数の短絡部接続導体は、短絡部接続導体相互
の電磁気的な結合を少なくする減結合状態に配置されて
いることを特徴とする誘電体フィルタ。1. An outer conductor is provided on an outer surface other than one outer surface.
The formed dielectric block and the inside of the dielectric block
Are placed in a state of being electromagnetically coupled to each other.
A number of inner conductors and the plurality of inner conductors on the one outer surface
Short-circuit each one end of the conductor and the outer conductor
A plurality of short-circuit connection conductors, and the plurality of inner conductors
1 for each of the short-circuit connecting conductors connected to them
A quarter-wavelength resonance circuit is formed on the one outer surface.
The plurality of short-circuit connecting conductors are
Placed in a decoupling state that reduces the electromagnetic coupling of
A dielectric filter characterized in that
に開口部が設けられ、前記開口部から前記一つの外面に
対向する外面方向に向かって拡がる複数の平行な有底穴
を有するものであり、前記複数の内導体は、前記複数の
平行な有底穴の内側面に沿って形成配置されたものであ
ることを特徴とする請求項1に記載の誘電体フィルタ。2. The dielectric block is the one outer surface.
An opening is provided on the one outer surface from the opening.
Multiple parallel bottomed holes that widen toward opposite outer surfaces
And the plurality of inner conductors are the plurality of inner conductors.
It is formed and arranged along the inner surface of parallel bottomed holes.
The dielectric filter according to claim 1, wherein:
合状態の配置は、前記誘電体ブロックの前記一つの端面
において、前記複数の内導体の一端のそれぞれから放射
状に離間するような方向に延びた状態の配置であること
を特徴とする請求項1に記載の誘電体フィルタ。3. Reduction in the plurality of short-circuit connecting conductors
The combined state is determined by the one end face of the dielectric block.
At each of the one ends of the plurality of inner conductors
The dielectric filter according to claim 1 , wherein the dielectric filters are arranged so as to extend in a direction in which they are spaced apart from each other .
合状態の配置は、前記誘電体ブロックの前記一つの端面
において、前記複数の内導体の一端のそれぞれから放射
状に離間するような方向に延びた窪み内に設けた状態の
配置であることを特徴とする請求項3に記載の誘電体フ
ィルタ。 4. Reduction in the plurality of short-circuit connecting conductors
The combined state is determined by the one end face of the dielectric block.
At each of the one ends of the plurality of inner conductors
In a recess that extends in the direction of
The dielectric filter according to claim 3, wherein the dielectric filter is arranged .
合状態の配置は、前記誘電体ブロックの前記一つの端面The combined state is determined by the one end face of the dielectric block.
において、前記複数の内導体の一端のそれぞれから互いAt one end of each of the plurality of inner conductors
に交差しないような方向に延び、かつ、周辺に電磁シーExtend in a direction that does not intersect the
ルド部を形成した状態の配置であることを特徴とする請The contract is characterized in that the arrangement is such that
求項1に記載の誘電体フィルタ。The dielectric filter according to claim 1.
Priority Applications (3)
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JP12025296A JP3461420B2 (en) | 1996-05-15 | 1996-05-15 | Dielectric filter |
KR1019970018370A KR100267457B1 (en) | 1996-05-15 | 1997-05-13 | Dielectric filter |
CN97104277A CN1096718C (en) | 1996-05-15 | 1997-05-15 | Medium wave filter |
Applications Claiming Priority (1)
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JP12025296A JP3461420B2 (en) | 1996-05-15 | 1996-05-15 | Dielectric filter |
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JP3461420B2 true JP3461420B2 (en) | 2003-10-27 |
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JP12025296A Expired - Fee Related JP3461420B2 (en) | 1996-05-15 | 1996-05-15 | Dielectric filter |
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JP (1) | JP3461420B2 (en) |
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US5162760A (en) * | 1991-12-19 | 1992-11-10 | Motorola, Inc. | Dielectric block filter with isolated input/output contacts |
JP3160150B2 (en) * | 1994-05-16 | 2001-04-23 | アルプス電気株式会社 | Dielectric filter |
FI98870C (en) * | 1994-05-26 | 1997-08-25 | Lk Products Oy | Dielectric filter |
JP3160157B2 (en) * | 1994-07-21 | 2001-04-23 | アルプス電気株式会社 | Dielectric filter |
EP0704924B1 (en) * | 1994-09-27 | 2000-01-26 | Murata Manufacturing Co. Ltd. | Dielectric filter |
-
1996
- 1996-05-15 JP JP12025296A patent/JP3461420B2/en not_active Expired - Fee Related
-
1997
- 1997-05-13 KR KR1019970018370A patent/KR100267457B1/en not_active IP Right Cessation
- 1997-05-15 CN CN97104277A patent/CN1096718C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1096718C (en) | 2002-12-18 |
KR100267457B1 (en) | 2000-10-16 |
JPH09307308A (en) | 1997-11-28 |
CN1167346A (en) | 1997-12-10 |
KR970077810A (en) | 1997-12-12 |
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