JP3455146B2 - Method of manufacturing temperature-sensitive material film and far-infrared sensor using temperature-sensitive material film manufactured by the manufacturing method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a far infrared sensor, and more particularly to a temperature sensitive material film as a sensor material used in a bolometer type far infrared sensor and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as far-infrared ray sensors, a bolometer-type far-infrared ray sensor, which operates without cooling, has high sensitivity, and is easily integrated, has been attracting attention and has been applied to a light-receiving portion of a far-infrared ray camera.

The bolometer type far infrared sensor is described in "Bolometer type uncooled infrared sensor" (Technical Report of the Institute of Image Information and Television Engineers, Vol. 21, No. 80, p1).
3-18).

In the bolometer type far infrared ray sensor, the sensor portion for sensing far infrared rays has a diaphragm structure. That is, as shown in FIG. 5, which is an explanatory view of the present invention, this sensor portion has a structure in which a diaphragm 1 separated from the substrate 4 with a predetermined space is supported by two legs 2. .

The diaphragm 1 is made of silicon dioxide (Si).
O ₂ ) or a lower insulating film made of trisilicon tetranitride (Si ₃ N ₄ ), a temperature sensitive material film made of vanadium dioxide (VO ₂ ), silicon dioxide (SiO ₂ ) or trisilicon tetranitride (Si ₃ N ₄ ). And an absorption film made of titanium nitride (TiN) for efficiently absorbing the incident far infrared rays 5.

An electrode 3 for detecting a resistance change of the diaphragm 1 is formed on the leg 2 so as to make electrical contact with a terminal (not shown) on the substrate 4. The electrode 3 has a structure covered with an upper insulating film and a lower insulating film similar to the diaphragm 1.

Further, in order to enhance the thermal insulation between the diaphragm 1 and the substrate 4, the width and thickness of the leg 2 are set to be as small as possible and the length is set to be as large as possible.

The sensitivity Res of the bolometer type far infrared sensor as described above is generally given by the following equation (1).

Res = η × α × V × ψ / G (1) Here, in the above formula (1), η is an absorption coefficient of far infrared rays of the diaphragm 1, and α is Temperature coefficient of resistance of temperature sensitive material film,
V is a drive voltage, ψ is a time constant, and G is a thermal conductance between the diaphragm 1 and the substrate 4.

From the above equation (1), it can be seen that the sensitivity of the bolometer type far infrared sensor is proportional to α, and the sensitivity increases as α increases. From this point of view, it is understood that it is desirable to use a temperature sensitive material film having a large α for the bolometer type far infrared sensor. The α of VO ₂ used as the temperature sensitive material film is about −2% / ° C.

[0011]

As described above, the VO ₂ has a considerably large α, but when this VO ₂ is used as the temperature-sensitive material film of the diaphragm, it is as follows. The problem arises.

Here, an equilibrium phase diagram of the V-O system is shown in FIG. It can be seen from this equilibrium diagram that VO ₂ has a transformation point at 68 ° C. and is divided into a low temperature phase and a high temperature phase at this transformation point. That is, it can be seen that VO ₂ undergoes a phase transition from a low temperature α phase to a high temperature β phase at 68 ° C. At this time, since the α phase and the β phase have different crystal structures, the VO ₂ film used as the temperature sensitive material film undergoes a volume change, and a large stress is generated in the diaphragm. Therefore, the structural reliability of the diaphragm is lowered, and the possibility that the diaphragm will be destroyed by repeated heating and cooling becomes very high.

Therefore, in the bolometer type far-infrared sensor using the VO ₂ film as the temperature-sensitive material film of the diaphragm, measures such as limiting the value of the electric current applied to the sensor so that the temperature of the diaphragm does not rise above 68 ° C. are taken. Is needed.

Therefore, for example, in Japanese Unexamined Patent Publication No. 9-257565, the phase transition temperature is raised by strictly setting the heat treatment conditions such as the atmosphere and the temperature when heat treating the formed V ₂ O ₅ film. The technology is disclosed.

In the VO _X film formed by the technique disclosed in the above publication, the phase transition temperature is 100 ° C. or higher, and it is not necessary to take measures such as limiting the value of the current passing through the sensor. . However, α, which is one of the factors showing the sensitivity of the sensor, is -1.6% / ° C,
It is much smaller than the conventional VO ₂ film.

Therefore, in the bolometer type far-infrared sensor using the VO _X film as a temperature sensitive material film based on Japanese Patent Application Laid-Open No. 9-257565, the influence of temperature change in the usage environment of the sensor can be reduced, but the sensitivity of the sensor is reduced. There is a problem that the VO ₂ film becomes lower than that when it is used as a temperature sensitive material film.

As another example of the temperature-sensitive material film of the bolometer, US Pat. No. 5,286,976 discloses an example of using titanium oxide, but titanium oxide is used as the resistance material (temperature-sensitive material). Is only described, and no technique is considered for increasing the temperature coefficient of resistance associated with the sensitivity of the bolometer.

The present invention has been made in order to solve the above problems, and its purpose is to increase the temperature coefficient of resistance to improve the sensitivity of the sensor and also to influence the temperature change in the environment in which the sensor is used. Provided is a temperature-sensitive material film which is not subjected to heat and a method for manufacturing the same.

[0019]

SUMMARY OF THE INVENTION The inventors of the present application have attempted to improve the sensitivity of a sensor by increasing the temperature coefficient of resistance and
As a result of diligent examination of a temperature-sensitive material film that is not affected by temperature changes in the sensor usage environment, "El
electrical Properties of Some Titanium Oxides "(Ph
ysical Review Vol. 187 No.3 p.828-833 1969),
At room temperature, the temperature coefficient of resistance α of Ti ₃ O ₅ single crystal was about −
Since it is disclosed that it is 2.64% / ° C,
Titanium oxide (TiO 2) has a large temperature coefficient of resistance.
_{We have found that x} ) can be used as a temperature-sensitive material film for a bolometer type far infrared sensor by making it thin.

That is, in the method for producing a temperature-sensitive material film of the present invention, titanium (Ti) is used as a target, and a titanium oxide film is produced by sputtering film formation in a mixed gas atmosphere of argon and oxygen. In the above process, the oxygen partial pressure in the mixed gas atmosphere is set to 1.7 × 10 ⁻³ Pa or more.

As described above, titanium (T
In the step of producing a titanium oxide film by sputtering using i) in a mixed gas atmosphere of argon and oxygen, the oxygen partial pressure in the mixed gas atmosphere is 1.7 × 10 ⁻³ Pa.
With the above settings, the titanium oxide film has a semiconductor-like temperature characteristic of resistance, and the oxygen concentration in the film is 66.
A temperature-sensitive material film of at% or more can be manufactured.

The temperature-sensitive material film having the above-mentioned structure is used as a bolometer type far-infrared ray.
When used as a resistance material for an external line sensor,
The degree can be greatly improved.

The titanium oxide film has a phase transition temperature of 1
It is as high as 80 ° C or higher and stable at room temperature.
Therefore, a large volume change may occur due to the heat generated by the current.
Bolometer type, which is structurally stable and highly reliable
It becomes possible to manufacture an infrared sensor.

Moreover, the titanium oxide film has the above-mentioned structure.
Has a high temperature coefficient of resistance in the formed film,
_{2 In a} reducing atmosphere to raise the phase transition temperature like a film
No need for heat treatment, which simplifies the manufacturing process,
As a result, the cost for manufacturing the temperature-sensitive material film is significantly reduced.
can do.

As a method for forming a film by sputtering,
The ion beam sputtering method may be used, or another sputtering method may be used.

When the above ion beam sputtering method is used, there is an advantage that the degree of freedom in controlling the method of introducing O ₂ gas and the method of exciting oxygen atoms is increased as compared with the ordinary RF sputtering method.

Further, the far infrared sensor of the present invention is characterized in that it has a temperature sensitive material film produced by the above method for producing a temperature sensitive material film in order to solve the above problems.

With the above arrangement, the sensitivity of the sensor can be greatly improved.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION A temperature-sensitive material film according to an embodiment of the present invention will be described below. In this embodiment, the case where the temperature-sensitive material film is used in a bolometer type far infrared sensor will be described.

The bolometer type far infrared sensor is shown in FIG.
As shown in FIG. 5, the sensor unit has a diaphragm structure in which the diaphragm 1 is arranged on the substrate 4. That is,
The sensor portion has a structure in which a diaphragm 1 separated from the substrate 4 with a predetermined space is supported by two legs 2.

The diaphragm 1 is made of silicon dioxide (Si).
O ₂ ) or a lower insulating film made of trisilicon tetranitride (Si ₃ N ₄ ), a temperature sensitive material film made of a titanium oxide (TiO _x ) film, silicon dioxide (SiO ₂ ) or trisilicon tetranitride (Si ₃ N 4). ₄ ) and an absorption film made of titanium nitride (TiN) for efficiently absorbing the incident far infrared rays 5.

On the other hand, on the leg 2, an electrode 3 for detecting a resistance change of the diaphragm 1 is formed so as to make electrical contact with a terminal (not shown) on the substrate 4. The electrode 3 has a structure covered with an upper insulating film and a lower insulating film similar to the diaphragm 1.

The substrate 4 has a function as resistance detecting means for detecting the resistance value of the diaphragm 1 by a resistance detecting current supplied from a driving device (not shown). Therefore, although the diaphragm 1 and the substrate 4 are electrically connected, they need to be thermally insulated.

Further, in order to enhance the thermal insulation between the diaphragm 1 and the substrate 4, the width and the thickness of the leg 2 are set to be as small as possible and the length is set to be as long as possible.

The sensitivity Res of the bolometer type far-infrared sensor as described above is generally given by the following equation (1) as shown in the section of the prior art.

Res = η × α × V × ψ / G (1) Here, in the above formula (1), η is the far infrared absorption coefficient of the diaphragm 1, α is the temperature coefficient of resistance of the temperature-sensitive material film,
V is a drive voltage, ψ is a time constant, and G is a thermal conductance between the diaphragm 1 and the substrate 4.

From the above equation (1), it can be seen that the sensitivity of the bolometer type far infrared sensor is proportional to the resistance temperature coefficient α, and the sensitivity increases as the resistance temperature coefficient α increases. From this viewpoint, it can be seen that it is desirable to use a temperature sensitive material film having a large temperature coefficient of resistance α.

The titanium oxide film forming the temperature-sensitive material film of the diaphragm 1 has temperature characteristics of semiconductor resistance, and the oxygen concentration in the film is set to 66 at% or more. As a result, the temperature coefficient of resistance α of this titanium oxide film is larger than the temperature coefficient of resistance α of the vanadium dioxide (VO ₂ ) film. For this reason,
It will be described later.

A method of manufacturing the temperature sensitive material film of the diaphragm 1 will be described below. Here, a method of forming a titanium oxide film as the temperature sensitive material film will be described, and an ion beam sputtering method is used for this film formation. The use of this ion beam sputtering method has an advantage that the degree of freedom in controlling the method of introducing O ₂ gas and the method of exciting oxygen atoms is increased, as compared with the ordinary RF sputtering method.

First, after evacuating the vacuum chamber to 1.3 × 10 ^-4 Pa or less, a mixed gas of argon and oxygen is introduced,
By ion beam sputtering a titanium (Ti) target, a glass substrate (Corning # 705
9) Titanium oxide (Ti) with a thickness of about 3000Å
An _Ox ) film is formed. The pressure of the mixed gas is about 1.7.
It is set to × 10 ^-2 Pa.

At this time, the oxygen partial pressure is controlled by keeping the total flow rate of argon and oxygen constant at 10 sccm and changing the flow rate ratio of argon and oxygen therein. By controlling the oxygen partial pressure in this way, the proportion of oxygen concentration in the titanium oxide film to be formed can be controlled.

Next, the resistance temperature coefficient α of the formed titanium oxide film is measured by the following method.

After forming an electrode on the surface of the titanium oxide film formed by the above-mentioned film forming method using a material having good conductivity such as Al, heating and cooling are performed at a rate of about 5 ° C./min, and at each temperature. The specific resistance is measured by the four-terminal method, and the temperature coefficient of resistance α is obtained. The resistance temperature coefficient α is obtained from the measurement result of the temperature change of the specific resistance.

FIG. 2 shows the temperature characteristic of the specific resistance of the titanium oxide film when the oxygen partial pressure is 2.1 × 10 ⁻³ Pa in the above-mentioned film forming method. In the figure,
● indicates the resistivity during the heating process, and △ indicates the resistivity during the cooling process.

From the graph shown in FIG. 2, it can be seen that the specific resistance of the titanium oxide film shows a so-called negative resistance-temperature characteristic that monotonously decreases with temperature, and that it has semiconductor-like electrical characteristics.

Further, the temperature change of the specific resistance of the titanium oxide film is continuous, and the values of the specific resistance are well matched in the heating process and the cooling process, and the phase as seen in the VO ₂ film is obtained. There is no discontinuous change in resistivity due to transition. Therefore, it is understood that it is preferable to use the titanium oxide film as the temperature sensitive material film of the bolometer type far infrared sensor. T in FIG.
The equilibrium phase diagram of i-O system is shown.

Here, a method for obtaining the temperature coefficient of resistance α of the titanium oxide film from the measurement result of the temperature change of the specific resistance of the titanium oxide film (graph shown in FIG. 2) will be described below.

First, the specific resistance ρ1 at a certain temperature T1
Then, the thermistor constant B is obtained from the specific resistance ρ2 at the temperature T2 different from the temperature T1 by the following equation (2).

B = 2.303 × (log ρ1-log ρ2) / (T1-T2) ... (2) Next, α at −room temperature T = 298K is calculated from α = −B / T ² .

The oxygen partial pressure dependency of α obtained by the above method during the formation of the titanium oxide film is as shown in the graph of FIG. Here, the temperature coefficient of resistance α for each oxygen partial pressure is as shown in Table 1 below. That is, Table 1
The temperature coefficient of resistance corresponding to each oxygen partial pressure of
Indicated by.

[0051]

[Table 1]

From the graphs shown in Table 1 and FIG. 1, it can be seen that the temperature coefficient of resistance α increases significantly when the oxygen partial pressure exceeds 1.7 × 10 ⁻³ Pa. Therefore, in order to obtain high α, the oxygen partial pressure should be 1.7 × 10 ⁻³ Pa.
It is desirable to form the titanium oxide film in the above oxygen atmosphere. The titanium oxide film thus formed is
The value of α is larger than that of a Ti ₃ O ₅ single crystal or a VO ₂ film.

The oxygen partial pressure dependence of the specific resistance of the titanium oxide film formed by the above film forming method is as shown in the graph of FIG. Here, the specific resistance ρ for each oxygen partial pressure is as shown in Table 2 below. That is, the specific resistance corresponding to each oxygen partial pressure in Table 2 is indicated by ● in FIG.

[0054]

[Table 2]

From the graphs shown in Table 2 and FIG. 3, when the oxygen partial pressure is less than 1.7 × 10 ⁻³ Pa, the specific resistance is several hundred μΩcm.
Although it is very low, it can be seen that the specific resistance sharply increases when the oxygen partial pressure exceeds 2.1 × 10 ⁻³ Pa.

The sensitivity of the bolometer is proportional to the temperature coefficient of resistance α as described above. Therefore, the larger α is, the higher the sensitivity is. From this point of view, it is preferable that the oxygen partial pressure at the time of forming the titanium oxide film is higher, but it can be seen from the graph shown in FIG. 3 that the specific resistance increases significantly when the oxygen partial pressure is increased.

Therefore, since the input impedance of an amplifier for amplifying a signal from a bolometer type far infrared sensor (hereinafter, simply referred to as a sensor) is usually about 100 MΩ, it is desirable to set the resistance of the sensor to 1 MΩ or less. Thus, it is necessary to set the relationship between the oxygen partial pressure and the specific resistance so that the resistance of the sensor is 1 MΩ or less.

Here, when a current for detecting the resistance value of the sensor (hereinafter referred to as a detection current) is passed in the in-plane direction of the titanium oxide film, the titanium oxide film (resistance The resistance value R of the body depends on the width W of the resistor, the length (distance between electrodes) L of the resistor, the film thickness t of the resistor, and the specific resistance ρ of the resistor. expressed.

R = ρ × L / (W × t) (3) Therefore, if the titanium oxide film and the diaphragm 1 have the same size. In consideration, assuming that the diaphragm 1 is a square pattern, L = W, and the above equation (3) becomes R = ρ / t, which is independent of the side length.

Therefore, the resistance value R of the resistor does not depend on the side length of the square pattern of the diaphragm 1, but is determined by the film thickness t of the titanium oxide film and the specific resistance ρ. For example, if the thickness of the titanium oxide film is 1000Å and the specific resistance is 10 Ωcm, the resistance value R of the sensor is 1 MΩ. Therefore, when the detection current is passed in the in-plane direction of the titanium oxide film, the oxygen partial pressure is preferably 2.1 × 10 ⁻³ Pa or less.

In the above description, in order to convert the resistance value R of the bolometer-type far-infrared sensor having a structure in which the detection current flows in the in-plane direction of the titanium oxide film, the diaphragm 1 is expediently formed into a square shape. Although it is assumed that the pattern is a pattern, the pattern is not limited to this, and it is obvious that the diaphragm 1 may be another pattern such as a rectangle.

However, when the diaphragm 1 is formed in a rectangular pattern, L ≠ W, and therefore the resistance value R depends on the side length (L, W) from the above equation (3).

On the other hand, in the case of the structure in which the detection current is passed in the direction perpendicular to the film surface of the temperature sensitive material film (for example, Japanese Patent Laid-Open No. 5-206
In the case of the structure described in Japanese Patent No. 526), it is desirable that the specific resistance of the temperature sensitive material film is rather large to some extent. The temperature-sensitive material used in the above publication has a specific resistance ρ = 8 × 10 ⁴
An amorphous silicon (Si) film having a resistance temperature coefficient α of 3 to 3.5% / ° C. is used.

On the other hand, in the present embodiment, as shown in FIG. 1, at a partial oxygen pressure of 2.3 × 10 ⁻³ Pa or higher, a temperature coefficient of resistance α higher than that of the above amorphous silicon can be obtained. In addition, the specific resistance ρ can be increased to such an extent that the detection current can flow in the direction perpendicular to the film surface of the temperature sensitive material film.

Next, three kinds of oxygen partial pressures 1.7 × 10 ⁻³ P
a, the oxygen concentration in the titanium oxide film formed at 2.1 × 10 ⁻³ Pa and 2.4 × 10 ⁻³ Pa is measured by XPS (X-ray Ph).
The results evaluated by the otoelectron spectroscopy method will be described.

For this evaluation, MICROLAB 300
A (V. G. Scientific) was used. Specifically, the above-mentioned apparatus irradiates each of the three types of titanium oxide films with X-rays (Al Kα rays),
2p of Ti escaped from the surface of the excited titanium oxide film
The composition of the titanium oxide film was identified from the amount of 3 electrons and 1s electron of O. At this time, a single crystal sample of titanium dioxide (TiO ₂ ) was simultaneously measured as a standard sample. The measurement results are shown in Table 3 below.

[0067]

[Table 3]

Based on Table 3, the evaluation results are shown in the graph of FIG. That is, the oxygen concentration corresponding to the oxygen partial pressure shown in Table 3 is shown by ● in FIG. In the figure, the broken line indicates the oxygen concentration of Ti ₃ O ₅ at which the large temperature coefficient of resistance α was 62.5 at in the single crystal sample.
%, And the oxygen concentration of TiO ₂ which is an insulator in the bulk and cannot be used as a temperature sensitive material is 66.7 at%.

From the graph of FIG. 4, in the case of the titanium oxide film manufactured in the present embodiment, the oxygen concentration in the film that gives a large temperature coefficient of resistance α is shifted to the high oxygen concentration side as compared with the case of the bulk. I understand. Moreover, it can be seen that the titanium oxide film manufactured in the present embodiment can obtain a large α in a wider range than in the case of the bulk.

Therefore, when the above-mentioned titanium oxide film is used as the temperature-sensitive material film used in the bolometer type far infrared sensor, it has a temperature characteristic of semiconductor resistance,
It is necessary to set the oxygen concentration in the film to be 66 at% or more.

When the oxygen concentration in the titanium oxide film is lower than 66 at%, the value of the temperature coefficient of resistance α is drastically decreased, and the titanium oxide film is used as a temperature sensitive material for the bolometer type far infrared sensor. If used for the above, there arises a problem that desired sensitivity cannot be obtained.

The upper limit of the oxygen concentration in the titanium oxide film will be described below.

As can be seen from FIGS. 1 and 3, as the resistance temperature coefficient α increases, the specific resistance ρ also increases. Therefore, in the element structure in which a current is passed in the in-plane direction of the titanium oxide film, the upper limit of the oxygen concentration in the film is when ρ is several Ωcm.

On the other hand, in the element structure in which a current is passed in the thickness direction of the titanium oxide film, there is no limitation due to the specific resistance ρ. Therefore, the upper limit is the oxygen concentration that can be formed as a solid film.

In this embodiment, the ion beam sputtering apparatus is used for forming the titanium oxide film,
The present invention is not limited to this, and another sputtering device may be used. Although Ti was used as the target at this time, titanium oxide may be used. However, it is necessary to adjust the film forming conditions so that the obtained titanium oxide film has a temperature characteristic of semiconductor resistance and the oxygen concentration in the film is 66 at% or more.

[0076]

As a method for producing the temperature-sensitive material film of the present invention , for example, Ti is used as a target, and an oxygen partial pressure is 1.7 × 10 ⁻³ Pa or more, and a mixed gas atmosphere of argon and oxygen is used. Among them, a method of forming a film by sputtering can be considered.

According to the above manufacturing method, the titanium oxide film
Has a temperature characteristic of semiconductor resistance, and the oxygen concentration in the film is
If a temperature-sensitive material film of 66 at% or more can be manufactured
Has the effect.

When the oxygen concentration in the film is 66 at% or more,
Bolometer type far-infrared using tan oxide film as temperature sensitive material film
When used as a sensor, the VO ₂ film is used as a temperature-sensitive material film.
Compared to the bolometer type far infrared sensor used for
It has the effect of significantly improving the sensitivity.
It

The titanium oxide film has a phase transition temperature of 1
It is as high as 80 ° C or higher and stable at room temperature.
Therefore, the heat generated by the drive current causes a large volume change.
Bolometer that is structurally stable and reliable
Type far infrared sensor can be manufactured
Play.

Moreover, the titanium oxide film is in a state of being formed.
Shows a high temperature coefficient of resistance , so it is reduced like a VO ₂ film.
No need for heat treatment in the atmosphere, which simplifies the manufacturing process.
Simply resulting in a significant reduction in manufacturing costs
There is an effect that can be.

In the above manufacturing method, the ion beam sputtering method may be used for the sputtering film formation. In this case, the degree of freedom in controlling the method of introducing O ₂ gas and the method of exciting oxygen atoms is increased as compared with the ordinary RF sputtering method.

The far-infrared sensor of the present invention has the temperature-sensitive material film manufactured by the above-described method for manufacturing a temperature-sensitive material film as described above.

Therefore, there is an effect that the sensitivity of the sensor can be greatly improved.

[Brief description of drawings]

FIG. 1 is a graph showing the oxygen partial pressure dependence of a resistance temperature coefficient of a titanium oxide film according to an embodiment of the present invention in a film forming atmosphere.

FIG. 2 is a graph showing a temperature characteristic of specific resistance of a titanium oxide film according to one embodiment of the present invention.

FIG. 3 is a graph showing the oxygen partial pressure dependency of a specific resistance of a titanium oxide film according to an embodiment of the present invention in a film forming atmosphere.

FIG. 4 is a graph showing the oxygen concentration dependence in the film formation atmosphere of the oxygen concentration in the titanium oxide film formed by changing the oxygen partial pressure according to the embodiment of the present invention.

FIG. 5 is a schematic perspective view of a bolometer-type far infrared sensor according to an embodiment of the present invention.

FIG. 6 is an equilibrium diagram of the Ti—O system.

FIG. 7 is an equilibrium diagram of the V—O system.

[Explanation of symbols]

1 diaphragm Two legs 3 electrodes 4 substrates 5 Incident far infrared

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI G01J 5/02 G01J 5/02 C G01K 7/22 G01K 7/22 A (56) Reference JP-A-9-257565 (JP, 257565) A) JP 11-326039 (JP, A) JP 10-259024 (JP, A) JP 2000-143243 (JP, A) JP 7-509057 (JP, A) J. Mater. Sci. , 1987, Vol. 22, No. 6, p. 2083-2086 (58) Fields surveyed (Int.Cl. ⁷ , DB name) G01J 5/00-5/62 G01J 1/00-1/60 JISST file (JOIS) Web of Science IEEE Xplore

Claims (3)

(57) [Claims] 1. A method for manufacturing a temperature-sensitive material film comprising a titanium oxide film, the method comprising the step of using titanium as a target and forming the titanium oxide film by sputtering in a mixed gas atmosphere of argon and oxygen. In the above process, the oxygen partial pressure in the mixed gas atmosphere is 1.
A method for producing a temperature-sensitive material film, which is set to 7 × 10 ⁻³ Pa or more. 2. A process according to claim 1, wherein the temperature-sensitive material film, which comprises using an ion beam sputtering on the sputtering. 3. A far infrared sensor comprising a temperature sensitive material film produced by the method for producing a temperature sensitive material film according to claim 1 or 2 .