JP3451097B2 - Heat treatment equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a semiconductor wafer,
The present invention relates to a heat treatment apparatus for heat- treating a planar object such as an LCD (liquid crystal display).

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, for example, a semiconductor wafer is subjected to oxidation / diffusion processing, CVD processing and the like. In particular, recently, 0.4 μm to 0.2
As the design rules of semiconductor devices are becoming finer to μm, and the diameter of semiconductor wafers is increasing from 8 inches to 12 inches, a rapid thermal processing system is available to support such ultra-thin film forming technology of large area. Development has become an urgent task.

Specifically, in the process treatment of a semiconductor wafer, it is an essential condition to reduce the thermal budget (thermal history). For example, a doping treatment of 50 to 100 Å, a gate oxide film or a capacitor insulating film In forming a thin film, rapid thermal processing, that is, thermal processing in a short time is essential. Further, for example, in order to reduce the resistance by making the PN junction as shallow as 0.1 μm or less and enable the formation of the junction on the surface of an arbitrary shape, it is necessary to prevent the film deterioration and the generation of crystal defects at the time of the junction. However, since the active region of the PN junction is narrow, it is necessary to perform heat treatment rapidly and in a short time.

Further, for example, in the formation of a LOCOS oxide film, the compressive stress of the adjacent LOCOS oxide film expands due to the synergistic effect of the thermal cycle, and the reliability of surface potential fluctuation, leak current, breakdown voltage, etc. is likely to decrease. However, in order to prevent this, it is necessary to reduce the thermal cycle by rapid thermal processing. In addition, for example, when a capacitor insulating film is formed using a high dielectric material, a metal film and a composite film that can be doped to enable metal oxide (Ta ₂ O ₅ etc.) and polyimide (passivation film) film formation A system capable of process processing has been required.

In the present situation where the diameter of the semiconductor wafer is increasing from 8 inches to 12 inches, the temperature difference between the central portion and the peripheral portion of the semiconductor wafer can be made small and uniform rapid thermal processing can be performed. It is necessary to reduce slips, distortions, and warps that are likely to occur on a wafer so as to avoid inconvenience in manufacturing semiconductor devices.

[0006]

However, in a conventional vertical batch processing type heat treatment apparatus, a cylindrical heat source is arranged so as to surround semiconductor wafers stacked and accommodated in a quartz wafer boat, Since the semiconductor wafer is heated from the peripheral portion toward the central portion, when a semiconductor wafer is heated rapidly, a large temperature gradient is generated between the central portion and the peripheral portion of the semiconductor wafer, and the semiconductor wafer is uniformly heated. There was a problem that heat treatment could not be performed. Therefore, the purpose of the present invention is to
An object of the present invention is to provide a heat treatment apparatus capable of rapidly heat-treating the entire surface of a planar object at a uniform temperature.

[0007]

In order to achieve the above object, in the heat treatment apparatus of the present invention, a linear shape composed of a plurality of resistance heating elements is arranged so as to face the processing surface of a planar object. A planar heat source in which heating elements are arranged in parallel, and a temperature sensor composed of a thermocouple on the plurality of linear heating elements.
A heating control unit that controls heating based on a temperature detection signal from the temperature sensor, a moving mechanism that relatively brings the object to be processed and the planar heat source close to each other, and the object to be processed, a planar heating source in the opposing state, and a rotation mechanism for rotating the center as an axis, and the planar onset
The parallel pitch of the linear heating elements of the heat source is the center of the planar heating source.
Configured to become coarser to denser from the area toward the periphery
It is characterized by being. Further, the planar heat sources are arranged symmetrically with respect to the center. In addition, the heating control unit may independently and independently control the temperature of the plurality of linear heating elements. In addition, the heating control unit is characterized in that the plurality of linear heating elements are combined to form a plurality of groups, and the temperature is controlled for each group .

[0008]

According to the present invention, since the planar heat generating source is arranged so as to face the processing surface of the planar object, the radiant heat from the planar heat source is made to enter the entire surface of the object vertically. Become. In addition, since the planar heat source is formed by arranging a plurality of linear heating elements in parallel, and the heating control unit for heating and controlling the plurality of linear heating elements is provided, the entire surface of the object to be processed can be uniformly made with high accuracy. It can be heat-treated. Further, rapid heating can be performed by rapidly bringing the planar object to be processed and the planar heat source close to each other by the moving mechanism. Further, by disposing the heat equalizing member on the side of the planar heat source facing the planar object, it is possible to perform heat treatment at a more uniform temperature. Further, by configuring each linear heating element that constitutes the planar heat source with a material with less contamination, it is possible to perform heat treatment without contamination.

[0009]

EXAMPLES Examples of the present invention will be described below. The following examples are examples in which a semiconductor wafer is used as a planar object, but the present invention is not limited to semiconductor wafers, and other planar objects such as LCD can be used. An object to be processed can also be used.

Example 1 In this example, a heat treatment apparatus which is particularly suitable for performing oxidation / diffusion processing on a semiconductor wafer will be described. FIG. 1 is a schematic diagram of a heat treatment apparatus according to this embodiment, and FIGS. 2 and 3 are schematic diagrams of a linear heating element of a planar heating source. 1 is a semiconductor wafer which is a planar object to be processed, 2 is a planar heat source,
25 is a heating controller, 3 is a wafer holder, 4 is a heat insulating material, 5
Is a moving mechanism. For example, 3 to 4 holding projections 31 formed integrally on the peripheral portion of the wafer holder 3 are brought into contact with the back surface of the semiconductor wafer 1 opposite to the processing surface 11, whereby the semiconductor wafer 1 is held. Holds on 3. The wafer holder 3 is preferably made of a material such as high-purity silicon carbide (SiC) that has excellent heat resistance and little pollution . In particular, high-purity silicon carbide (SiC) has better heat resistance than quartz (SiO ₂ ), and can withstand a high temperature of about 1200 ° C. sufficiently, so it is suitable as a material for oxidation / diffusion treatment. Is.

The planar heat source 2 is fixedly disposed on the inner wall of the upper portion of the heat insulating material 4 so as to face the processing surface of the semiconductor wafer 1, for example, immediately above. The planar heat source 2 is
It may be arranged directly above the semiconductor wafer 1 as shown in FIG. 1, or may be arranged just below the semiconductor wafer 1 with the processing surface 11 facing downward. Then, as shown in FIGS. 2 and 3, a plurality of linear heating elements 21 are arranged in parallel. A holding member 22 is made of, for example, high-purity silicon carbide (SiC) or the like. For two adjacent linear heating elements that extend in the same direction,
From the viewpoint of preventing the adverse effect of the electromagnetic force, it is preferable that the currents flow in the directions in which the magnetic fluxes cancel each other out.
In addition, the pitch of the linear heating elements 21 arranged in parallel is from coarse to dense from the central portion of the planar heat source 2 toward the peripheral portion, from the viewpoint of suppressing the heat radiation in the peripheral portion of the semiconductor wafer 1 and heating it uniformly. It is preferable that From the same viewpoint, it is preferable that the planar heat sources 2 are arranged symmetrically with respect to the center.

Each linear heating element 21 is provided with a temperature sensor 26 such as a thermocouple, and these temperature sensors 26 are connected to a heating controller 25. The heating controller 25 can independently control the temperature of each linear heating element 21 based on a signal from the temperature sensor 26. It should be noted that all of the linear heating elements 21 may be temperature-controlled completely independently of each other, or a combination of appropriate elements may be combined to form a plurality of groups, and the temperature may be controlled for each group. Further, instead of detecting the temperature of each linear heating element 21 of the planar heating source 2 by the temperature sensor 26, the temperature of each linear heating element 21 of the semiconductor wafer 1 is directly measured using a radiation thermometer. The heating controller 25 may control the temperature based on the detection signal.

The linear heating element 21 is, as shown in FIG.
It may be arranged not only in one direction but also in a state where it intersects vertically and horizontally. The intersections of the linear heating elements 21 are electrically insulated from each other.

The shortest distance L between the planar heat source 2 and the semiconductor wafer 1 is preferably short from the viewpoint of downsizing the apparatus, but from the viewpoint of heating the entire surface of the large area semiconductor wafer 1 at a uniform temperature. It is better to be long. Specifically, the distance is set to satisfy both conditions to some extent, for example, about 50 to 150 mm. Here, the “shortest separation distance” means the semiconductor wafer 1
Is the distance from the predetermined position to the planar heat generating source 2 when the process is stopped and the process is performed in a stationary state.

Each linear heating element 21 of the planar heating source 2 is, for example, molybdenum disilicide (MoSi ₂ ), silicon carbide (SiC), graphite (C), iron (Fe), chromium (Cr) and aluminum ( It can be configured using a resistance heating element such as a Kanthal (trade name) wire which is an alloy wire of Al). For example, molybdenum disilicide (MoSi ₂ ) is
It can be used as a single wire and Kanthal wire can be used as a coil. In particular, molybdenum disilicide (MoSi ₂ ) can sufficiently withstand a high temperature of about 1800 ° C., and is therefore suitable as a material for oxidation / diffusion treatment. In particular, examples of the material with less pollution include high-purity silicon carbide (SiC) and graphite (C) whose surface is coated with silicon carbide (SiC).

The outer diameter of the heating surface formed by the linear heating element 21 of the planar heating source 2 is 2 times the outer diameter of the semiconductor wafer 1.
It is preferably double or more. According to the planar heating source 2 that satisfies such conditions, the temperature difference between the central portion and the peripheral portion of the semiconductor wafer 1 can be sufficiently reduced, and the entire processing surface 11 of the semiconductor wafer 1 can be further improved. The heat treatment can be performed at a uniform temperature.

The heat generating surface of the planar heat source 2 is the semiconductor wafer 1
It is preferably arranged in parallel with. The heat generating surface of the planar heat generating source 2 may be a flat surface as a whole, or the peripheral portion may be curved in a direction approaching the semiconductor wafer 1. The temperature of the planar heat source 2 is preferably 100 to 300 ° C. higher than the maximum operating temperature of the semiconductor wafer 1.

Further, as shown in FIG. 5, a planar heat equalizing member 23 may be arranged between the planar heat source 2 and the semiconductor wafer 1. The heat equalizing member 23 is used for the planar heat source 2
When the heat generation unevenness is present, the heat generation unevenness is eliminated to sufficiently control the radiant heat toward the semiconductor wafer 1 in the vertical direction. Further, the heat equalizing member 23 is made of a material with less pollution such as high-purity silicon carbide (SiC), and the heat equalizing member 23 completely isolates the planar heat source 2 from the processing space. Even when the planar heat source 2 is made of a material containing a heavy metal that causes contamination, it is possible to effectively prevent the contamination by the heavy metal.

The heat equalizing member 23 is arranged so as to face the processing surface 11 of the semiconductor wafer 1, and its outer diameter is at least twice the outer diameter of the semiconductor wafer 1 as in the case of the planar heat source 2. Is preferred. Further, it is preferable that the thickness of the soaking member 23 in the central portion thereof is thicker than that of the peripheral portion thereof. With such a thickness, it is possible to reduce heat dissipation in the peripheral portion of the semiconductor wafer 1 and further improve the temperature uniformity between the central portion and the peripheral portion. Further, the heat equalizing member 23 may have a shape in which its peripheral portion is curved in a direction approaching the semiconductor wafer 1. By having such a curved peripheral portion, it is possible to reduce heat dissipation in the peripheral portion of the semiconductor wafer 1 and reduce the temperature difference between the central portion and the peripheral portion.

The moving mechanism 5 shown in FIG. 1 moves the wafer holder 3 rapidly toward and away from the planar heat source 2, and then moves backward rapidly, and has a motor 51 and a drive shaft 52.
And a drive arm 53. Motor 5
Reference numeral 1 is connected to a drive shaft 52, and the rotation of the drive shaft 52 is controlled by a motor 51. The drive shaft 52 is provided with a screw, and is screwed to one end of the drive arm 53 via the screw. The other end of the drive arm 53 is connected to the wafer holder 3 via a motor 61 described later. When the motor 51 rotates the drive shaft 52, the drive arm 53 moves up or down by the action of the screw provided on the drive shaft 52, and the wafer holder 3 moves up or down as the drive arm 53 moves. Moving. Therefore, by controlling the rotation of the motor 51 by the control circuit, the rising speed or the falling speed of the wafer holder 3 can be appropriately adjusted. The movement distance of the wafer holder 3 is, for example, 300
~ 600 mm, moving speed 50 ~ 200 mm
/ Sec or more is preferable.

FIG. 6 shows an example of the heat treatment mode in the oxidation / diffusion treatment, and the temperature of the sheet heating source 2 is, for example, 130.
With the nitrogen gas (N ₂ ) flowing under a constant temperature of 0 ° C., the wafer holder 11 is moved at a rising speed of, for example, 200 mm / sec so that the temperature of the semiconductor wafer 1 reaches about 500 ° C. from room temperature. Move up. Semiconductor wafer 1
If the temperature of the semiconductor wafer 1 reaches about 500 ° C., the temperature of the semiconductor wafer 1 further reaches about 1200 ° C., for example, 10
The wafer holder 3 is further moved upward at an ascending speed of 0 mm / sec. When the temperature of the semiconductor wafer 1 reaches about 1200 ° C., the supply of nitrogen gas is stopped while the wafer holder 3 is fixed at that position, and then the oxygen gas (O ₂ )
While performing the oxidation / diffusion treatment. After the oxidation / diffusion process is completed, the temperature of the semiconductor wafer 1 is cooled to room temperature by repeating the above steps in the reverse order.

During the oxidation / diffusion process of the semiconductor wafer 1, the rotation mechanism 6 rotates the semiconductor wafer 1 about its center. In the rotation mechanism 6, the motor 61 rotates the semiconductor wafer 1 together with the wafer holder 3.

The heat insulating material 4 shown in FIG. 1 is made of, for example, alumina ceramics, and its thickness becomes smaller toward the lower part in order to have an appropriate temperature gradient along the moving direction of the semiconductor wafer 1. That is, the heat retaining effect is reduced toward the bottom. At the lower end of the heat insulating material 4, it is preferable to provide cooling means (not shown) for rapidly cooling the semiconductor wafer 1 after the heat treatment is completed. As the cooling means, a refrigerant such as ammonia, sulfur disulfide, water or the like can be used. Using the latent heat of the refrigerant, for example, 300-
Cool to a temperature of 400 ° C. The inner diameter of the heat insulating material 4 is preferably determined in consideration of the temperature of the semiconductor wafer. For example, when the semiconductor wafer is 8 inches, it is twice as large as 40.
About 0 to 500 mmφ is preferable.

Reference numeral 7 in FIG. 1 denotes a processing container, which can be formed of, for example, quartz (SiO ₂ ). This processing container 7 has a cylindrical shape having an opening at the lower end,
The wafer holder 3 and the semiconductor wafer 1 are separated from the planar heat source 2 and the heat insulating material 4 to separate the atmosphere of the semiconductor wafer 1 from the outside.

Reference numeral 8 in FIG. 1 denotes a gas introduction pipe, one end of which is projected from the lower portion of the processing container 7 to the outside, and the other end of which is extended upward inside the processing container 7 and is positioned diagonally above the semiconductor wafer 1. ing. The gas introduction pipe 8 is airtightly fixed to the processing container 7 by tightening an O-ring with a screw, for example.

Reference numeral 9 in FIG. 1 denotes a gas discharge pipe, which is a processing container 7.
Is provided so as to penetrate the inside and outside of the processing container 7 at the lower part of the. The wafer holder 3 is lifted by the moving mechanism 5 so that the processing container 7 is completely sealed while the semiconductor wafer 1 is completely stored in the processing container 7. A process gas is introduced into the processing container 7 from the gas introduction pipe 8 and the temperature inside the processing container 7 is brought to a predetermined temperature necessary for the oxidation / diffusion processing by the radiant heat from the planar heat source 2. Since the temperature inside the processing container 7 is constant if the distance from the planar heat source 2 is constant, the semiconductor wafer 1
By setting in advance the maximum position (rest position) of, the predetermined temperature (for example, 12
00 ° C.). The semiconductor wafer 1 is oxidized / diffused by the reaction of the process gas under heating.

According to such a heat treatment apparatus, the radiant heat from the planar heat source 2 is as shown by the arrow in FIG.
The outer diameter of the semiconductor wafer 1 is, for example, 12 because the semiconductor wafer 1 faces substantially perpendicular to the processing surface (upper surface) 11 of the semiconductor wafer 1.
Even if the area is as large as an inch, the entire processing surface 11 can be heated at a uniform temperature, and since the semiconductor wafer 1 and the planar heating source 2 are brought relatively close to each other, rapid heating is possible. Becomes As a result, the semiconductor wafer 1
In addition, slip, strain, warp, etc. do not occur, and highly reliable heat treatment is possible. Further, rapid heat treatment is possible in response to recent miniaturization of design rules of semiconductor devices and increase in diameter of semiconductor wafers. Therefore, for example, doping treatment of 50 to 100 Å, formation of a very thin film of gate oxide film and capacitor insulating film, formation of shallow PN junction of 0.1 μm or less, L
It exhibits remarkably excellent effects in various heat treatments such as formation of an OCOS oxide film and formation of a capacitor insulating film using a high dielectric material.

When the semiconductor wafer 1 and the planar heating source 2 are brought relatively close to each other, the planar heating source 2 may be fixed to raise the semiconductor wafer 1, or the semiconductor wafer 1 may be fixedly arranged. The planar heat generating source 2 may be lowered. The relative approach speed is determined by the processing surface 11 of the semiconductor wafer 1.
The temperature rising speed is, for example, 20 ° C / sec or more,
The speed is preferably 100 ° C./sec or more. As a specific approach speed, for example, 50 to 20
It is preferably 0 mm / sec or more.

When the semiconductor wafer 1 and the planar heating source 2 are brought relatively close to each other to heat the semiconductor wafer 1, the shortest distance L between the semiconductor wafer 1 and the planar heating source 2 is set. By changing the value, a plurality of heat treatments with different temperatures can be performed. That is, the maximum value of the heating temperature of the semiconductor wafer 1 can be set to a desired value by changing the shortest separation distance L between the semiconductor wafer 1 and the planar heat source 2, so that, for example, a high temperature of about 1200 ° C. A treatment or a low temperature treatment at a temperature of about 500 ° C. can be appropriately selected and performed, and a composite process treatment can be performed.

[Embodiment 2] In this embodiment, a heat treatment apparatus particularly suitable for performing a CVD process on a semiconductor wafer will be described. FIG. 8 shows an outline of the heat treatment apparatus,
The wafer holder 3, the moving mechanism 5, and the rotating mechanism 6 have the same configurations as those of the first embodiment shown in FIG. The planar heat source 2 has a shape in which its peripheral portion is curved in a direction approaching the semiconductor wafer 1. Generally, the peripheral portion of the semiconductor wafer 1 has a larger heat radiation effect than the central portion thereof, but by thus bending the peripheral portion of the planar heat source 2 in the direction of approaching the semiconductor wafer 1, the peripheral portion of the semiconductor wafer 1 is radiated. Can be suppressed, and the temperature of the entire surface of the semiconductor wafer 1 can be made more uniform. The inner wall of the upper portion of the heat insulating material 4 is the planar heat source 2
The shape is such that it can receive the curved peripheral portion of the.

The processing container 7 has a double tube structure including an outer tube 71 and an inner tube 72, and the outer tube 71 is made of quartz (Si).
It is made of a heat resistant material such as O ₂ ) and has a cylindrical shape having an upper end closed and an opening at the lower end. The inner pipe 72 has a cylindrical shape having openings at both upper and lower ends,
They are arranged concentrically in the outer tube 71 at intervals.
The gas that has risen from the upper opening of the inner pipe 72 is discharged to the outside of the system through the gap between the inner pipe 72 and the outer pipe 71. A manifold 73 made of, for example, stainless steel is engaged with the lower end openings of the outer pipe 71 and the inner pipe 72, and the outer pipe 71 and the inner pipe 72 are held by the manifold 73. The manifold 73 is fixed to a base (not shown).

The lower end of the outer pipe 71 and the manifold 73
Annular flanges 71A and 73A are provided at the upper open end of each, and an O-ring 74 made of an elastic member is arranged between the flanges 71A and 73A to hermetically seal between them. The lower end portion of the inner pipe 72 is held by a holding portion 75 formed by projecting inward from the middle stage of the inner wall of the manifold 73.

On one side of the lower stage of the manifold 73, there is formed a first bent portion made of, for example, quartz toward the upper heat treatment portion.
The gas introduction pipe 76 of FIG. 1 penetrates through a sealing member (not shown), and a film forming gas, for example, dichlorosilane (SiH ₂ Cl ₂ ) gas is supplied into the processing container 7. The first gas introduction pipe 76 is connected to a gas supply source (not shown). A second gas introduction pipe 77 made of, for example, quartz, which is bent toward the upper heat treatment section, penetrates through the other side of the lower part of the manifold 73 through a seal member (not shown). A film forming gas, for example, ammonia (NH ₃ ) gas is supplied. The second gas introduction pipe 77 is connected to the gas supply source.

An exhaust pipe 78, which is connected to an exhaust system such as a vacuum pump (not shown), is connected to the upper stage of the manifold 73, and has been treated to flow down a gap between the inner pipe 72 and the outer pipe 71. The gas can be discharged to the outside of the system and the inside of the processing container 7 can be set to a depressurized atmosphere of a predetermined pressure. A disc-shaped cap portion 79 made of, for example, stainless steel or the like is removably attached to the lower end opening of the manifold 73 so as to be hermetically sealed via an O-ring 80 made of an elastic member.

A rotary shaft 6 which is rotatable in an airtight state by, for example, a magnetic seal is provided at a substantially central portion of the cap portion 79.
2 penetrates. The rotation shaft 62 is the rotation shaft of the wafer holder 3, and a motor 61 for rotating the wafer holder 3 at a predetermined speed is connected to the lower end portion thereof.
The motor 61 is fixed to the drive arm 53 of the moving mechanism 5, and as the drive arm 53 moves up and down, the cap portion 79 and the rotary shaft 62 move up and down integrally to load and unload the wafer holder 3. It is supposed to do.

An example of the CVD process using the heat treatment apparatus of FIG. 8 will be described. First, the moving mechanism 5 lowers the wafer holder 3 to unload it. Wafer holder 3 to 1
A single semiconductor wafer 1 is held. Next, the planar heat source 2
Is driven to generate heat, and the atmosphere at the highest position of the wafer holder 3 is brought into a uniform temperature state of, for example, 700 ° C. The wafer holder 3 is raised by the moving mechanism 5 and loaded into the processing container 7, and the internal temperature of the processing container 7 is maintained at 700 ° C., for example. After evacuating the inside of the processing container 7 to a predetermined vacuum state, the rotation mechanism 6 rotates the wafer holder 3 to integrally rotate the semiconductor wafer 1 held thereon.

At the same time, a film forming gas such as dichlorosilane (SiH ₂ Cl ₂ ) gas is supplied from the first gas introducing pipe 76, and a film forming gas such as ammonia (NH ₃ ) gas is supplied from the second gas introducing pipe 77. Supply. The supplied film forming gas rises in the processing container 7 and is evenly supplied to the semiconductor wafer 1 from above the semiconductor wafer 1. The inside of the processing container 7 is evacuated through the exhaust pipe 78, and is 0.1 to 0.5.
The pressure is controlled to be within a range of Torr, for example, 0.5 Torr, and the film forming process is performed for a predetermined time.

When the film forming process is completed in this way, the process gas in the process container 7 is replaced with an inert gas such as N ₂ and the internal pressure is kept constant in order to proceed to the film forming process for the next semiconductor wafer. The pressure is increased to the pressure, and then the wafer holder 3 is lowered by the moving mechanism 5 to take out the wafer holder 3 and the processed semiconductor wafer 1 from the processing container 7. The processed semiconductor wafer 1 on the wafer holder 3 that has been unloaded from the processing container 7 is replaced with an unprocessed semiconductor wafer, and is loaded into the processing container 7 again in the same manner as described above to perform the film forming process. It

[Third Embodiment] In the heat treatment apparatus shown in FIG. 8, the wafer holder 3 may be fixed and the planar heat source 2 may be moved up and down. Further, when taking out the processed semiconductor wafer 1, it is preferable to first raise the planar heat source 2, the heat insulating material 4, and the outer pipe 71, and then raise the inner pipe 72. In this way, the wafer holder 3
Since the mechanical impact force applied to the semiconductor wafer 1 is reduced when fixing the above, it is possible to prevent the thin film on the semiconductor wafer 1 from being damaged, and it is not necessary to move the manifold 73. Therefore, the configuration of the device can be simplified.

Although the present invention has been described based on the embodiments, the heat treatment apparatus of the present invention can be applied to any of a normal pressure process, a reduced pressure process and a vacuum process. Further, the planar object to be processed is not limited to a circular semiconductor wafer, and may be an LCD equiangular planar object to be processed. Also, the planar heat source is placed below,
A semiconductor wafer may be arranged above it.

[0041]

As described above, according to the present invention,
The entire surface of the planar object can be rapidly heat-treated at a uniform temperature.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a heat treatment apparatus according to a first embodiment.

FIG. 2 is a cross-sectional plan view showing an example of a specific form of a planar heat source.

FIG. 3 is a vertical sectional front view showing an example of a specific form of a planar heat source.

FIG. 4 is a cross-sectional plan view showing another example of the specific form of the planar heat source.

FIG. 5 is an explanatory diagram of a main part of a heat treatment apparatus according to a modified example of the first embodiment.

FIG. 6 is an explanatory diagram showing an example of a heat treatment mode in a semiconductor wafer oxidation / diffusion process.

FIG. 7 is an explanatory diagram of a function and effect of the planar heat source.

FIG. 8 is an explanatory diagram of a heat treatment apparatus according to a second embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 semiconductor wafer 2 planar heating source 21 linear heating element 22 holding member 23 uniform heating member 25 heating controller 26 temperature sensor 3 wafer holder 31 holding protrusion 4 heat retaining material 5 moving mechanism 51 motor 52 drive shaft 53 drive arm 6 rotation Mechanism 61 Motor 62 Rotating shaft 7 Processing container 71 Outer pipe 72 Inner pipe 73 Manifold 71A Flange 73A Flange 74 O-ring 75 Holding portion 76 First gas introduction pipe 77 Second gas introduction pipe 78 Exhaust pipe 79 Cap portion 8 Gas introduction Pipe 80 O-ring 9 Gas exhaust pipe

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI H01L 21/285 H01L 21/285 C 21/31 21/31 BE 21/324 21/324 G

Claims (4)

(57) [Claims] 1. A planar heating source comprising a plurality of linear heating elements arranged in parallel and arranged so as to face a processing surface of a planar object, and the linear heating elements. Temperature sensor consisting of a thermocouple on the heating element
And a heating control unit that controls heating based on a temperature detection signal from the temperature sensor, a moving mechanism that relatively moves the object to be processed and the planar heat source, and the object to be processed. In a state of facing the planar heat source, a rotating mechanism that rotates about its center as an axis , and the parallel pitch of the linear heating elements of the planar heat source,
From the central part of the planar heat source to the peripheral part
A heat treatment apparatus characterized by being configured to be dense . 2. The planar heat generating source is a pair of left and right with respect to the center.
The heat treatment apparatus according to claim 1, wherein the heat treatment apparatuses are arranged in a line . 3. The heating control unit is configured to generate a plurality of straight lines.
The temperature of each heating element is controlled separately and independently.
The heat treatment apparatus according to 1 or 2 . 4. The heating control unit is configured to generate the plurality of straight lines.
Combine the heating elements to form multiple groups and
The temperature control is performed for each group.
The heat treatment apparatus according to any one of 1 .