JP3441218B2 - Semiconductor switch device and electric device using the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor switching device that performs switching operation by connecting a plurality of semiconductor switching devices such as thyristors in series, and an electric device such as a pulse laser device and a klystron modulator using the semiconductor switching device.

[0002]

2. Description of the Related Art Generally, in order to excite a copper vapor laser or an excimer laser, it is necessary to perform pulse discharge of several tens of kV and several tens of kA with a pulse width of several hundred ns. For this purpose, a high-voltage, large-current high-speed switch that discharges the electric charge stored in the capacitor at high speed is required, and a thyratron has been conventionally used.

However, thyratrons are
There was a problem that the service life was limited and frequent replacement was necessary. In order to remove this limitation of life, it is necessary to make the switch device semiconductor. However, the voltage rating of the semiconductor switch element alone is at most several kV, and
In order to perform the switching operation of 0 kV, it is necessary to connect ten or more semiconductor switching elements in series.

When a large number of semiconductor switching elements are connected in series as described above, the geometrical dimension becomes long and the inductance increases, which is not suitable for high speed switching operation. In order to eliminate this drawback, it is known that a method of arranging a conductor in a cylindrical shape around the semiconductor switching element and canceling the magnetic flux by causing a current to flow in the direction opposite to the semiconductor switching element is effective. .

In this case, in order to effectively cancel the magnetic flux, it is necessary to minimize the distance between the central semiconductor switch element and the surrounding conductors. The required minimum value of this distance increases as the voltage of the switch increases, so in order to reduce the inductance, the switch device must be composed of a switch of several tens of kV in one switch module, and the voltage rating must be halved. It is appropriate to use a modular structure.

FIG. 5 is a block diagram of such a conventional switch device. As shown in the figure, a plurality of semiconductor elements 1 and heat radiation fins 2 are alternately laminated, and a plurality of outer peripheral conductors 3 are arranged in a cylindrical shape around the semiconductor elements 1 to form one switch module 5. The switch device 7a is configured by using two such switch modules 5. That is, the cathode terminal K1 of the first switch module 5 and the anode terminal A2 of the second switch module 5 are connected by the crossover conductor 4a, and the anode terminal A1 of the first switch module 5 is connected to the anode terminal A0 of the entire switch device. 1 by connecting the cathode terminal A2 of the second switch module 5 to the cathode terminal K0 of the entire switch device.
One switch device 7a is configured.

[0007]

However, in the conventional switch device as described above, one switch module, that is, the switch device, is provided between the outer conductor of the first switch module and the outer conductor of the second switch module. Since there is a potential difference corresponding to 50% of the total voltage, it is necessary to arrange the switch modules at a distance in order to ensure insulation between them. Therefore, the length of the crossover conductor 4 is increased, the inductance is increased, and the overall inductance is increased, which makes it unsuitable for high-speed switching operation. Further, there is a drawback that the outer shape of the switch becomes large, so that an electric device such as a laser to which the switch device is applied also becomes large in size and the weight also increases.

The present invention has been made to solve the above-mentioned drawbacks, and an object thereof is to provide a semiconductor switch device suitable for high-voltage and high-speed switching operation.
Another object is to provide a small and light electric device such as an excimer laser, a copper vapor laser, a klystron modulator, etc., which uses this semiconductor switching device.

[0009]

In order to achieve the above object, a semiconductor switching device according to a first aspect of the present invention comprises a first series circuit in which semiconductor switching elements and heat radiation fins are alternately laminated, and a first series circuit thereof . Cylindrical multiple conductors around the circuit
A first switch module in which a plurality of conductors arranged in a cylindrical shape are connected in series at one end, and a semiconductor switch element and a radiation fin whose polarity is opposite to that of the first switch module are alternately laminated . 2 series circuits
And a plurality of conductors arranged in a cylinder around the second series circuit.
Placed at one end, and arranged multiple conductors in a cylindrical shape
A second switch module connected in series, the first Sui
Of the conductors arranged in the cylindrical shape of the switch module.
Both the switch modules are connected in series by connecting the node terminal and the cathode terminals of the plurality of conductor ends arranged in a cylindrical shape of the second switch module.
The cathode terminal of the first switch module
The second switch is used as the cathode terminal of the semiconductor switch device.
The anode terminal of the switch module to the semiconductor switch device.
It is characterized in that it is used as an anode terminal .

According to a second aspect of the present invention, in the semiconductor switch device according to the first aspect , the first and second switch modules are provided.
It is characterized in that the conductor ends of the tool are connected by a wide conductor. The excimer laser device according to claim 3 of the present invention is the anode of the semiconductor switch device according to claim 1 ,
Connect to the discharge circuit in the excimer laser discharge chamber through the saturable reactor for magnetic assist and the main capacitor.
Then, excitation is performed by performing pulse discharge in the discharge circuit .

According to a fourth aspect of the present invention, there is provided a copper vapor laser device,
The anode of the semiconductor switch device according to claim 1 is the first
Magnetic assistable saturable reactor and first main coil
Capacitor, the second main capacitor, and the second magnetic reed
Copper vapor laser discharge tube through saturable reactor for strike
Connected to discharge charge stored in the capacitor, and performs excitation by causing discharge in the <br/> copper vapor laser discharge tube.

A klystron modulator device according to a fifth aspect of the present invention is the semiconductor switch device according to the first aspect.
The node is routed through a saturable reactor for magnetic assist.
Connected to the high voltage terminal of the loose waveform shaping network,
The cathode of the conductor switch device is the primary winding of the pulse transformer
The secondary winding of the pulse transformer
It is connected to the klystron, to discharge the charge stored in the pulse waveform shaping circuitry boosts by the pulse transformer, characterized in that exciting the klystron.

[0013]

According to claim 1 of the present invention, since the polarities of the first switch module and the second switch module are opposite, the potential of the outer conductor of the second switch module is approximately the same as that of the outer conductor of the first switch module. Since the potentials are the same, the distance between the modules can be reduced, and the inductance of the transition conductor can be reduced.

According to the second aspect of the present invention, since the crossover conductor is composed of a wide conductor, the inductance of the crossover conductor can be made so small that it can be ignored. According to claim 3 to claim 4 of the present invention, a high voltage short pulse discharge can be obtained by combining such a switch device with a magnetic assist circuit and a magnetic pulse compression circuit, and copper vapor laser oscillation and excimer laser oscillation can be obtained. To perform.

According to the fifth aspect of the present invention, a rectangular current is obtained by discharging the electric charge of the pulse waveform shaping network by the switch device, and the rectangular current is boosted by the pulse transformer to generate a high voltage suitable for the operation of the klystron. The klystron is operated with a rectangular pulse.

[0016]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a configuration diagram of a first embodiment (corresponding to claim 1 and claim 2) of the present invention. In the figure, the same parts as those of the conventional example shown in FIG.

As shown in the figure, in this embodiment, the polarity of the second switch module 6 is opposite to that of the first switch module 5. Therefore, the anode terminal A2 of the second switch module 6 is provided on the outer peripheral conductor, and the cathode terminal K2 is provided on the semiconductor element 1 and the radiation fin 2 which are stacked. Therefore, it becomes possible to connect the outer peripheral conductor of the first switch module 5 and the outer peripheral conductor of the second switch module 6 on the same surface, and the outer peripheral conductors 3 of both of them have substantially the same potential, and the distance between the modules is reduced. be able to.

Further, in this embodiment, two modules 5,
The wide conductor 4 can be used as the crossover conductor between the two conductors. Therefore, the first switch module 5 and the second switch module 6 are connected by the wide and short transition conductor 4A, and the inductance hardly increases due to the connection. Therefore, even if a large number of semiconductor elements are connected in series, a small switch device having a small inductance can be obtained.

FIG. 2 is a block diagram of an excimer laser device according to a second embodiment (corresponding to claim 3) of the present invention. In the figure, the anode of the switch device 7 is connected to a discharge circuit in the excimer laser discharge chamber 11 through a magnetically assistable saturable reactor 8 and a main capacitor 9.
This discharge circuit accommodates a preionization electrode 13, a main discharge electrode 12, a peaking capacitor 14, and the like. Also,
The magnetically assistable saturable reactor 8 and the main capacitor 9 are surrounded by a cylindrical conductor 10, one end of which is connected to the cathode of the switch device 7 and the other end of which is connected to the ground side E of the discharge circuit. , Part of the current path.

In the excimer laser device configured as described above, when the switch device 7 operates after the main capacitor 9 is charged to several tens of kV by the charging power source (not shown), the same state as when the terminals of the switch device 7 are short-circuited is generated. After the voltage is held by the magnetically assistable saturable reactor 8 for a certain period of time, the saturable reactor 8 is saturated, the main capacitor 9 is discharged, and a high-voltage pulse current is generated. This pulse current is applied to the preionization electrode 13
The peaking capacitor 14 is charged while causing the discharge to generate ultraviolet rays. At this time, since the switch device 7 and the cylindrical conductor 10 in the middle are both coaxial cylindrical low inductance circuits, a strong ultraviolet ray is generated between the preionization electrodes 13 at a high pulse width of several hundred ns of the pulse current. , The laser gas between the main discharge electrodes 12 is ionized. After the peaking capacitor 14 has been charged, glow discharge occurs between the main discharge electrodes 12 and excimer laser emission occurs.

As described above, according to this embodiment, since the switch device having a small size and a low inductance and the current path having a low inductance are provided, a small size and light weight excimer laser device can be obtained.

FIG. 3 is a block diagram of a copper vapor laser device according to a third embodiment (corresponding to claim 4) of the present invention. In the figure, the anode of the switch device 7 is a saturable reactor 15A for magnetic assist and a first main capacitor 16A.
Is connected to the high-voltage electrode 20H of the copper vapor laser discharge tube 20 through the second main capacitor 16B and the pulse compression saturable reactor 15B. A peaking capacitor 19 is connected between the high voltage electrode 20H and the low voltage electrode 20L of the copper vapor laser discharge tube 20.

The saturable reactor 1 for magnetic assist is also available.
5A and the 1st main capacitor 16A, the saturable reactor 15B for pulse compression, and the 2nd main capacitor 1
6B is surrounded by cylindrical conductors 17 and 18, respectively. The cylindrical conductors 17 and 18 are connected to each other, one end of which is connected to the cathode of the switch device 7 and the other end of which is connected to the low voltage electrode 20L of the copper vapor laser discharge tube 20 to form a part of a current path. ing. Further, the saturable reactor 15A for magnetic assist and the first main capacitor 1
The second main capacitor 16B is connected to the connection point of 6A, and the other end of the second main capacitor 16B is connected to the cylindrical conductor 18. Since the structure of the copper vapor laser device itself is known, its description is omitted.

In the copper vapor laser device configured as described above, the first main capacitor 16A and the second main capacitor 16B are several tens of k apart by a charging power source (not shown).
When the switch device 7 operates after being charged to V, the same state as when the terminals of the switch device 7 are short-circuited,
After the voltage is held for a certain time by the magnetic assistable saturable reactor 15A, the saturable reactor 15A is saturated, the electric charge of the second main capacitor 16B is discharged through the switch device 7, and the voltage of the first main capacitor 16A is changed. Invert. Therefore, the first main capacitor 16
The combined voltage of A and the second main capacitor 16B rises to twice the initial charging voltage. When this voltage becomes almost maximum, the saturable reactor 15B for magnetic pulse compression is saturated, and the electric charges of the two main capacitors 16A and 16B are discharged through the saturable reactor 15B, so that a high-voltage pulse current is generated. At this time, the switch device 7 and the conductors 17 and 18 in the middle are all coaxial cylindrical low-inductance circuits, so that a high-speed pulse voltage with a pulse width of about 100 ns is applied to the electrodes 20H and 20 of the copper vapor laser device 20.
It occurs between L and discharge occurs. This discharge excites the copper contained in the discharge tube to evaporate, so that laser oscillation occurs.

FIG. 4 is a block diagram of a klystron modulator according to a fourth embodiment (corresponding to claim 5) of the present invention. In the figure, the anode of the switch device 7 is a pulse shaping network 22 through a saturable reactor 21 for magnetic assist.
Of the pulse transformer 23 is connected to the ground terminal E on the primary side of the pulse transformer 23. The high voltage terminal on the primary side of the pulse transformer 23 is connected to the low voltage terminal of the pulse shaping network 22, and the secondary side of the pulse transformer 23 is connected to the klystron 24.

In this embodiment, when the switching device 7 is operated after the pulse shaping network 22 is charged by the charging power source (not shown), the same state as when the terminals of the switching device 7 are short-circuited is generated, Assist reactor 21
After the voltage is held by the switch device 7 and the pulse transformer 23 for a certain period of time,
Discharges through the primary winding. The current waveform at this time is a rectangular wave current having a fast rise and a constant current value, which is a characteristic of the pulse shaping network 22. This current is several hundred k on the secondary side due to the action of the pulse transformer 23.
A voltage of V is generated and the klystron 24 is pulse-excited. This causes the klystron 24 to perform strong microwave oscillation.

The present invention is not limited to the embodiments described above. Further, in the second and third embodiments, when the insulating material lid is provided at both ends of the cylindrical conductor to fill the inside with the insulating liquid, the insulating strength inside increases, so that the diameter of the cylinder is reduced and the insulating distance is increased. The size can be reduced, and the inductance can be further reduced.

[0028]

As described above, according to the present invention,
Since the element polarities of the first switch module and the second switch module are connected in reverse polarities, it is possible to provide a small switch device suitable for high-voltage and high-speed switching operation. Further, electric devices such as an excimer laser device, a copper vapor laser device, and a klystron modulator to which this switch device is applied can be made compact and lightweight, and are very useful in practice.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a first embodiment of the present invention.

FIG. 2 is a configuration diagram of a second embodiment of the present invention.

FIG. 3 is a configuration diagram of a third embodiment of the present invention.

FIG. 4 is a configuration diagram of a fourth embodiment of the present invention.

FIG. 5 is a configuration diagram of a conventional semiconductor switch device.

[Explanation of symbols]

1 ... Semiconductor element, 2 ... Radiating fin, 3 ... Peripheral conductor, 4 ...
Crossover conductor, 4A ... Wide crossover conductor, 5, 6 ... Switch module, 7 ... Switch device, 8, 15A, 15B, 2
1 ... Saturable reactor, 9 ... Capacitor 10, 17,
18 ... Cylindrical conductor, 11 ... Excimer discharge chamber,
12 ... Main discharge electrode, 13 ... Preliminary ionization electrode, 14, 19 ...
Peaking capacitor, 16A, 16B ... Main capacitor, 20 ... Copper vapor laser discharge tube, 20H ... High-voltage electrode,
20L ... Low-voltage electrode, 22 ... Pulse shaping circuit network, 23 ... Pulse transformer.

Claims (5)

(57) [Claims] 1. A first series circuit in which semiconductor switching elements and heat radiation fins are alternately laminated, and a plurality of conductors are arranged in a cylindrical shape around the first series circuit, and a plurality of conductors are arranged in the cylindrical shape.
A first switch module in which a number of conductors are connected in series at one end, a second series circuit in which semiconductor switch elements having the polarities opposite to those of the first switch module and heat radiation fins are alternately stacked, and a second series thereof Duplicated around the circuit
Number of conductors arranged in a cylinder, and a plurality of conductors arranged in a cylinder
A second switch module in which the conductors of the above are connected in series at one end, and a cylindrical shape of the first switch module.
Anode terminals at a plurality of conductor ends and cathodes at a plurality of conductor ends arranged in a cylindrical shape of the second switch module
Both of the switch modules by connecting the terminals
Together with connected in series, the first switch module
The cathode terminal is the cathode terminal of the semiconductor switching device.
The anode terminal of the second switch module
A semiconductor switch device, which is used as an anode terminal of the semiconductor switch device. 2. The semiconductor switch device according to claim 1, wherein the conductor end portions of the first and second switch modules are connected by a wide conductor. 3. A semiconductor switching device according to claim 1, wherein
The node discharges inside the excimer laser discharge chamber through the saturable reactor for magnetic assist and the main capacitor.
An excimer laser device which is connected to an electric circuit and is excited by performing pulse discharge in the discharge circuit . 4. A semiconductor switch device according to claim 1, wherein
The node is a first magnetic assist saturable reactor and
A first main capacitor, a second main capacitor, and
Copper vapor through the second saturable reactor for magnetic assist
Connected to the laser discharge tube, and discharges the charge stored in the capacitor, a copper vapor laser apparatus which is characterized in that the excitation by causing discharge in the copper vapor laser discharge tube. 5. A semiconductor switch device according to claim 1, wherein
The node is routed through a saturable reactor for magnetic assist.
Connected to the high voltage terminal of the loose waveform shaping network,
The cathode of the conductor switch device is the primary winding of the pulse transformer
The secondary winding of the pulse transformer
It is connected to the klystron, to discharge the charge stored in the pulse waveform shaping circuitry boosts by the pulse transformer, klystron modulator and wherein the exciting the klystron.