JP3439750B2 - Surface acoustic wave device - Google Patents

Surface acoustic wave device

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Publication number
JP3439750B2
JP3439750B2 JP2001272408A JP2001272408A JP3439750B2 JP 3439750 B2 JP3439750 B2 JP 3439750B2 JP 2001272408 A JP2001272408 A JP 2001272408A JP 2001272408 A JP2001272408 A JP 2001272408A JP 3439750 B2 JP3439750 B2 JP 3439750B2
Authority
JP
Japan
Prior art keywords
resonator
surface acoustic
acoustic wave
series arm
arm resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001272408A
Other languages
Japanese (ja)
Other versions
JP2002124849A (en
Inventor
和志 橋本
秀樹 大森
良夫 佐藤
理 伊形
勉 宮下
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
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Priority to JP2001272408A priority Critical patent/JP3439750B2/en
Publication of JP2002124849A publication Critical patent/JP2002124849A/en
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Publication of JP3439750B2 publication Critical patent/JP3439750B2/en
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Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、弾性表面波共振器
により構成される弾性表面波フィルタ素子、詳しくは、
圧電基板上にインタディジタルな電極指を配設した弾性
表面波共振器を複数個組み合せてなる弾性表面波共振器
複合形フィルタに関する。近年、自動車電話や携帯電話
は小形・軽量化が進み、急速に普及してきている。これ
らの電話装置の無線信号処理部にはフィルタが用いられ
るが、機器の小形・軽量・高性能化のため最近、弾性表
面波素子を用いた上述の如きフィルタが開発使用されて
きている。 【0002】 【従来の技術】いわゆるトランスバーサル形の弾性表面
フィルタは、電気信号を弾性表面波に変換する入力イン
タディジタルトランスデューサと弾性表面波を再び電気
信号に逆変換する出力インタディジタルトランスデュー
サとを圧電基板上に配置したものである。 【0003】図9に弾性表面波共振器の基本構成を示
す。同図において、1は圧電単結晶基板、2は櫛形駆動
電極で例えばA1からなる櫛形電極指2a,2bが交互
に差し挟まれている(インタディジタル電極指)。3は
例えば同じA1からなる反射電極で電極指3aが多数並
んだ構造をしており、図ではショートストリップ型反射
電極として示されている。 【0004】図10に示す如く、弾性表面波共振器は共
振周波数frと反共振周波数faの二重共振特性を持
つ。共振器を用いてフィルタを形成する方法は以下の通
りである。図10(イ)に上記弾性表面波共振器1個が
直列接続された場合の通過特性、図10(ロ)に上記弾
性表面波共振器1個が並列接続された場合の通過特性を
夫々示す。これらを組み合わせた図10(ハ)より、直
列共振器の共振周波数frと並列共振器の反共振周波数
faがほぼ等しい時バンドバスフィルタが形成される事
がわかる。所望のフィルタ特性を得るには、各直列共振
器と並列腕共振器の共振特性と梯子の組み合わせ方を最
適化する必要がある。 【0005】これまで、表面弾性波共振器を梯子型に構
成したフィルタにおいて、そのチップ上の配置は、例え
ば特開平1−260911号に示されるように共振器の
表面弾性波の伝播路が共通化されたようなものであっ
た。即ち、同一伝播路上に共振器を配列し、その相互干
渉を利用した多重モードフィルタの構成が用いられてい
た。図11に、例えば1.5mm×2.25mm程度の圧電
基板1上に5個の共振器R1〜R5を配列したチップ配
置構造の具体例を示す。図の下部に示す等価回路からも
判るように、入出力端子間において共振器R2,R5が
並列となっている。換言すれば、同図の如き等価回路を
実現するためのチップ配置は例えば図11の如く形成さ
れる。 【0006】 【発明が解決しようとする課題】しかるに従来のチップ
配置はチップ面積をいかに小さくするかにのみ焦点が向
けられ、複数の直列腕と並列腕を梯子形に配列する場合
における信号線の引き回しによる伝送損失や、直列腕と
並列腕との間の弾性波の干渉には全くと言ってよい程、
関心が払われていなかった。その結果、図12に示すよ
うにフィルタの挿入損失や帯域内リップルが大きくなっ
ていた。 【0007】そこで本発明は、信号線の引き回しによる
伝送損失や直列腕と並列腕の弾性波の干渉等を抑え良好
なフィルタ特性を得ることを目的とする。 【0008】 【課題を解決するための手段】本発明を理解するために
まず図1〜図3の配置について説明する。図1では、直
列腕共振器11,12はその弾性波伝播路と略直交する
直線パターン上に配置され、かつこれら直列腕共振器1
1,12はコーナー部(曲げ部)を持たない直線状の接
続線(信号線)13により接続される。さらに並列腕共
振器21は直列腕共振器11,12の弾性波の伝播路5
0(図では左右方向)および直列腕共振器同士を接続す
る信号線13を避けた位置でかつその弾性波伝播路が直
列腕共振器の直線パターン部と交差するように配置す
る。 【0009】図2では、入出力部の少なくとも一方(例
えば出力部)が並列腕共振器22により構成される場
合、その少なくとも一方の入出力部に設けられた並列腕
共振器22と直列腕共振器12を直線上に配置し、これ
ら直列腕・並列腕共振器12,22もコーナー(曲げ
部)を設けない直線状の接続線(信号線13′)により
接続する。図3では、直列腕共振器11,12に挟まれ
た並列腕共振器21の弾性波伝播路が並列腕共振器を挟
む直列腕共振器11,12の弾性波伝播路の間になるよ
うに形成する。 【0010】これに対し、請求項に記載した本発明で
は、図4及び7に示すように、並列腕共振器を挟む直列
腕共振器の少なくとも一方が、フィルタ回路の入出力部
の直列腕共振器として構成される場合、少なくとも一方
の入出力部に設けられた該直列腕共振器の弾性波伝播路
より外側(チップ端側)に弾性波伝播路を設けるように
並列腕共振器21(図7では並列腕共振器22)を配置
し、さらに該並列腕共振器の少なくとも一部が直列腕共
振器を接続する直線状の信号線の延長線上に位置するよ
うに配置されることを特徴とする。 【0011】 【作用】図1,2,3に示すように直列腕共振器はコー
ナーを設けない、即ち、曲げ部を有さない接続(信号)
線により接続されるため、高周波線路のコーナー部に生
ずる容量を低減でき、従って、接続線部での伝送損失が
極めて小さい。従ってフィルタの挿入損失を小さくする
ことができる。また、並列腕共振器は直列腕共振器の弾
性波伝播路を避けるように配置するため、直列・並列腕
共振器の弾性波が互いに干渉することなく良好なフィル
タ特性が得られる。さらに、直列腕共振器のパターン部
と交差するように並列腕共振器を配置することにより素
子を小さくすることができる。 【0012】本発明によれば、図4及び7に示すよう
に、並列腕共振器21(図7では並列腕共振器22)の
伝播路は、素子を接続するパターンを避けて外側に設け
られる為、対数を多くすることが可能でかつ素子面積も
小さくできる。特に図7では、回路構成は図5と同じで
あるが、入力側直列腕共振器11より外側(チップ端
側)に並列腕共振器22の伝播路を配置することによ
り、図5よりさらにチップ面積を小さくすることができ
る。 【0013】 【実施例】図8に示す等価回路構成を実現するフィルタ
の実際のチップ上レイアウトを図5に示す。フィルタチ
ップは36°Y−X LiTaO3 基板1上にA1−C
u膜による櫛形電極および反射器により構成される弾性
表面波共振器11,12A,12B,21,22を回路
素子とし、これらをパターンで直列および並列に接続し
て、回路構成される。共振器の周期および対数、開口長
を適当に調整することにより、所望の特性を得ることが
でき、本実施例においては直列腕共振器11,12A,
12Bの周期を4.10μm、並列腕共振器21,22
の周期を4.30μmとし、開口長と対数をそれぞれ8
0μmと150対とした。その特性を図6に示す。同じ
条件で同一の回路構成を図11に示すようにコーナーを
持つ接続線13′で形成すると図6に破線で示す如くな
り、本発明によれば挿入損失が0.2dB改善されている
ことがわかる。 【0014】好ましくは、図5に示すように、位置検出
用パターン8を素子および配線を避け、かつチップの対
角線上の両コーナ部もしくはその近傍に設ける。その結
果、チップをパッケージに搭載し、ワイヤーボンディン
グする際、チップの位置がバラツイても位置検出用パタ
ーン8に対するボンディングパッド位置の相対位置が一
定となるため、自動ボンディングの信頼性を向上するこ
とができる。 【0015】上述の図5に、位置検出用パターン8を素
子と同一面上にパターン形成と同時に形成した例を示
す。検出用パターン8の大きさは100μm×150μ
mで、チップの端から200μm離した対角線上に図形
のセンターを設けた。本位置検出用パターンに対し、入
出力およびアースパッド5,6の位置関係は一定であ
る。しかもウエハ切断時にチッピング等が生じても影響
を受けない。このように、位置検出用パターン8の認識
を行うことで、自動ボンディング時におけるワイヤを電
極パッド部に正確に結線することができる。位置検出用
パターン8の形状は、読取装置が認識できるものであれ
ば特に制限はなく、素子の形状との差異がはっきりわか
る円形や星形等も好ましい。尚、図1〜図12において
対応する部品は同一番号で示し重複説明を省略する。ま
た、必要に応じてチップパターン図には等価回線を下部
に示してある。 【0016】 【発明の効果】以上の通り、本発明によれば、弾性表面
波共振器を梯子型に配置して、帯域通過フィルタを構成
する場合、挿入損失の低下と大きな帯域外抑圧度を実現
できる。また、良好なフィルタ特性を維持しながら、チ
ップの小型化がはかられる。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave filter device comprising a surface acoustic wave resonator,
The present invention relates to a surface acoustic wave resonator composite filter in which a plurality of surface acoustic wave resonators each having an interdigital electrode finger disposed on a piezoelectric substrate are combined. 2. Description of the Related Art In recent years, mobile phones and mobile phones have become smaller and lighter, and are rapidly spreading. Filters are used in the radio signal processing units of these telephone devices. Recently, the above-mentioned filters using surface acoustic wave elements have been developed and used in order to reduce the size, weight, and performance of devices. 2. Description of the Related Art A so-called transversal type surface acoustic filter is composed of an input interdigital transducer for converting an electric signal into a surface acoustic wave and an output interdigital transducer for converting the surface acoustic wave back into an electric signal again. It is arranged on a substrate. FIG. 9 shows a basic configuration of a surface acoustic wave resonator. In the figure, 1 is a piezoelectric single crystal substrate, 2 is a comb-shaped drive electrode, and interdigitated electrode fingers 2a and 2b made of, for example, A1 are interleaved (interdigital electrode fingers). Numeral 3 is a reflective electrode made of, for example, the same A1, and has a structure in which a number of electrode fingers 3a are arranged, and is shown as a short strip type reflective electrode in the figure. As shown in FIG. 10, a surface acoustic wave resonator has a double resonance characteristic of a resonance frequency fr and an anti-resonance frequency fa. The method of forming a filter using a resonator is as follows. FIG. 10A shows the pass characteristics when one surface acoustic wave resonator is connected in series, and FIG. 10B shows the pass characteristics when one surface acoustic wave resonator is connected in parallel. . From FIG. 10C combining these, it can be seen that a bandpass filter is formed when the resonance frequency fr of the series resonator is substantially equal to the anti-resonance frequency fa of the parallel resonator. To obtain desired filter characteristics, it is necessary to optimize the combination of the resonance characteristics of each series resonator and the parallel arm resonator and the ladder. Heretofore, in a filter in which a surface acoustic wave resonator is formed in a ladder shape, the arrangement on the chip is such that the propagation path of the surface acoustic wave of the resonator is common as shown in Japanese Patent Application Laid-Open No. 1-260911. It was something like that. That is, a configuration of a multi-mode filter in which resonators are arranged on the same propagation path and mutual interference is used has been used. FIG. 11 shows a specific example of a chip arrangement structure in which five resonators R1 to R5 are arranged on a piezoelectric substrate 1 of, for example, about 1.5 mm × 2.25 mm. As can be seen from the equivalent circuit shown at the bottom of the figure, the resonators R2 and R5 are in parallel between the input and output terminals. In other words, a chip arrangement for realizing an equivalent circuit as shown in FIG. 11 is formed, for example, as shown in FIG. [0006] However, the conventional chip arrangement focuses only on how to reduce the chip area, and the signal lines in a case where a plurality of serial arms and parallel arms are arranged in a ladder form. The transmission loss due to routing and the interference of elastic waves between the serial arm and the parallel arm can be said at all,
Interest was not paid. As a result, as shown in FIG. 12, the insertion loss and the in-band ripple of the filter were increased. SUMMARY OF THE INVENTION It is an object of the present invention to obtain a good filter characteristic by suppressing transmission loss due to signal line routing and interference between elastic waves of a serial arm and a parallel arm. [0008] In order to understand the present invention, the arrangement of FIGS. 1 to 3 will be described first. In FIG. 1, the serial arm resonators 11 and 12 are arranged on a linear pattern substantially orthogonal to the elastic wave propagation path.
1 and 12 are connected by a straight connection line (signal line) 13 having no corner portion (bent portion). Further, the parallel arm resonator 21 is connected to the propagation path 5 of the elastic wave of the series arm resonators 11 and 12.
0 (horizontal direction in the figure) and a position avoiding the signal line 13 connecting the serial arm resonators, and the acoustic wave propagation path is arranged so as to intersect with the linear pattern portion of the serial arm resonator. In FIG. 2, when at least one of the input / output units (for example, the output unit) is constituted by the parallel arm resonator 22, the parallel arm resonator 22 provided in at least one of the input / output units and the series arm resonance The resonator 12 is arranged on a straight line, and the series arm / parallel arm resonators 12 and 22 are also connected by a straight connection line (signal line 13 ') having no corner (bent portion). In FIG. 3, the elastic wave propagation path of the parallel arm resonator 21 sandwiched between the series arm resonators 11 and 12 is set between the elastic wave propagation paths of the series arm resonators 11 and 12 sandwiching the parallel arm resonator. Form. On the other hand, according to the present invention, as shown in FIGS. 4 and 7, at least one of the series arm resonators sandwiching the parallel arm resonator is connected to the series arm resonance of the input / output section of the filter circuit. When configured as a resonator, the parallel arm resonator 21 (FIG. 10) is provided so that the elastic wave propagation path is provided outside (the chip end side) of the elastic wave propagation path of the series arm resonator provided in at least one input / output unit. 7, a parallel arm resonator 22) is arranged, and at least a part of the parallel arm resonator is arranged so as to be located on an extension of a linear signal line connecting the series arm resonators. I do. As shown in FIGS. 1, 2 and 3, the series arm resonator has no corner, that is, a connection (signal) having no bent portion.
Since the connection is made by the wire, the capacitance generated at the corner of the high-frequency line can be reduced, and therefore, the transmission loss at the connection line is extremely small. Therefore, the insertion loss of the filter can be reduced. Further, since the parallel arm resonators are arranged so as to avoid the elastic wave propagation path of the series arm resonator, good filter characteristics can be obtained without the elastic waves of the series and parallel arm resonators interfering with each other. Further, by arranging the parallel arm resonator so as to intersect with the pattern portion of the series arm resonator, the size of the element can be reduced. According to the present invention, as shown in FIGS. 4 and 7, the propagation path of the parallel arm resonator 21 (the parallel arm resonator 22 in FIG. 7) is provided outside the pattern connecting the elements. Therefore, the logarithm can be increased and the element area can be reduced. In particular, in FIG. 7, the circuit configuration is the same as that of FIG. 5, but by disposing the propagation path of the parallel arm resonator 22 outside the input side series arm resonator 11 (chip end side), The area can be reduced. FIG. 5 shows an actual on-chip layout of a filter for realizing the equivalent circuit configuration shown in FIG. The filter chip is A1-C on a 36 ° YX LiTaO 3 substrate 1.
The surface acoustic wave resonators 11, 12A, 12B, 21, and 22 constituted by a comb-shaped electrode and a reflector made of a u film are used as circuit elements, and these are connected in series and parallel in a pattern to form a circuit. By appropriately adjusting the period, logarithm, and aperture length of the resonator, desired characteristics can be obtained. In this embodiment, the series arm resonators 11, 12A,
The period of 12B is 4.10 μm, and the parallel arm resonators 21 and 22 are used.
Is 4.30 μm, and the aperture length and logarithm are 8
0 μm and 150 pairs. FIG. 6 shows the characteristics. When the same circuit configuration is formed by the connection line 13 'having a corner as shown in FIG. 11 under the same conditions, the result becomes as shown by the broken line in FIG. 6, and it can be seen that according to the present invention, the insertion loss is improved by 0.2 dB. Understand. Preferably, as shown in FIG. 5, the position detecting pattern 8 is provided at two corner portions on the diagonal line of the chip or in the vicinity thereof, avoiding the elements and wiring. As a result, when the chip is mounted on the package and wire-bonded, the relative position of the bonding pad position with respect to the position detection pattern 8 is constant even if the position of the chip varies, thereby improving the reliability of automatic bonding. it can. FIG. 5 shows an example in which the position detecting pattern 8 is formed on the same plane as the element simultaneously with the pattern formation. The size of the detection pattern 8 is 100 μm × 150 μ
m, the center of the figure was provided on a diagonal line 200 μm away from the edge of the chip. With respect to this position detection pattern, the input / output and the positional relationship between the ground pads 5 and 6 are constant. In addition, even if chipping or the like occurs during wafer cutting, it is not affected. As described above, by recognizing the position detection pattern 8, the wire at the time of automatic bonding can be accurately connected to the electrode pad portion. The shape of the position detection pattern 8 is not particularly limited as long as it can be recognized by the reading device, and is preferably a circle, a star, or the like in which a difference from the shape of the element can be clearly seen. In FIGS. 1 to 12, corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, in the chip pattern diagram, the equivalent lines are shown at the bottom as necessary. As described above, according to the present invention, when a surface acoustic wave resonator is arranged in a ladder form to form a band-pass filter, a reduction in insertion loss and a large out-of-band suppression degree can be achieved. realizable. In addition, the size of the chip can be reduced while maintaining good filter characteristics.

【図面の簡単な説明】 【図1】弾性表面波素子の基本的なパターン形状を示す
構造図である。 【図2】図1の別のパターン形状を示す構造図である。 【図3】図1の更に別のパターン形状を示す構造図であ
る。 【図4】図1の更に別のパターン形状を示す本発明の配
置を表わした構造図である。 【図5】図1の更に別のパターン形状を示す構造図であ
る。 【図6】弾性表面波素子の挿入損失特性を示すグラフで
ある。 【図7】図5の更に別のパターン形状を示す本発明の配
置を表わした構造図である。 【図8】図5に示すパターン形状の等価回路図である。 【図9】弾性表面波共振子の基本構造を示す図解図であ
る。 【図10】共振子によりフィルタを構成するための説明
図である。 【図11】従来のフィルタチップの電極レイアウトの一
例を示す構造図である。 【図12】従来のフィルタの帯域内リップルを示す特性
図である。 【符号の説明】 11,12…直列腕共振子 21,22…並列腕共振子 13,13′…信号線
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural diagram showing a basic pattern shape of a surface acoustic wave device. FIG. 2 is a structural diagram showing another pattern shape of FIG. 1; FIG. 3 is a structural view showing still another pattern shape of FIG. 1; FIG. 4 is a structural diagram showing an arrangement of the present invention showing still another pattern shape of FIG. 1; FIG. 5 is a structural diagram showing still another pattern shape of FIG. 1; FIG. 6 is a graph showing the insertion loss characteristics of a surface acoustic wave device. FIG. 7 is a structural diagram showing an arrangement of the present invention showing still another pattern shape of FIG. 5; 8 is an equivalent circuit diagram of the pattern shape shown in FIG. FIG. 9 is an illustrative view showing a basic structure of a surface acoustic wave resonator; FIG. 10 is an explanatory diagram for configuring a filter using a resonator. FIG. 11 is a structural diagram showing an example of an electrode layout of a conventional filter chip. FIG. 12 is a characteristic diagram showing an in-band ripple of a conventional filter. [Description of Signs] 11, 12 ... series arm resonators 21, 22 ... parallel arm resonators 13, 13 '... signal lines

───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊形 理 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 宮下 勉 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 平4−95208(JP,A) 特開 平4−54011(JP,A) 実開 昭61−151430(JP,U) 特公 昭58−1850(JP,B1) 結城 佑,奥野和雄,小林洋一,狭帯 域高安定弾性表面波フィルタ,エレクト ロニク・セラミクス,1977年 1月 1 日,第8巻冬号(通巻46号),p.65− 70 塩崎 忠 監修,圧電材料の製造と応 用,株式会社シーエムシー,1984年 2 月24日,p.153−154 (58)調査した分野(Int.Cl.7,DB名) H03H 9/64 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Osamu Igata 1015 Uedanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Tsutomu Miyashita 1015, Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Limited (56) References JP-A-4-95208 (JP, A) JP-A-4-54011 (JP, A) JP-A-61-151430 (JP, U) JP-B-58-1850 (JP, B1) Yuki Yu, Kazuo Okuno, Yoichi Kobayashi, High Bandwidth Stable Surface Acoustic Wave Filter, Electronic Ceramics, January 1, 1977, Vol. 8, Winter No. 46, p. 65-70 Supervised by Tadashi Shiozaki, Manufacture and Application of Piezoelectric Materials, CMC Corporation, February 24, 1984, p. 153-154 (58) Field surveyed (Int. Cl. 7 , DB name) H03H 9/64

Claims (1)

(57)【特許請求の範囲】 【請求項1】 弾性表面波共振器を梯子型回路の直列腕
と並列腕とに設けることにより構成した帯域通過フィル
タ回路をチップ上に所定パターンで形成してなる弾性表
面波素子において、 並列腕共振器を挟む直列腕共振器の少なくとも一方がフ
ィルタ回路の入出力部の少なくとも一方の直列腕共振器
として構成される場合、該直列腕共振器はその弾性波伝
播路と略直交する直線パターン上に配置されると共に、
直線状の信号線により接続され、該並列腕共振器は該少
なくとも一方の入出力部に設けられた直列腕共振器の伝
播路より外側に配置され、さらに該並列腕共振器の少な
くとも一部が直列腕共振器を接続する該直線状の信号線
の延長線上に位置するように配置されることを特徴とす
る弾性表面波素子。
(57) [Claim 1] A band-pass filter circuit configured by providing a surface acoustic wave resonator in a series arm and a parallel arm of a ladder type circuit is formed on a chip in a predetermined pattern. When at least one of the series arm resonators sandwiching the parallel arm resonator is configured as at least one series arm resonator of the input / output part of the filter circuit, the series arm resonator Along with being arranged on a linear pattern that is substantially orthogonal to the propagation path,
The parallel arm resonators are connected by a linear signal line, and the parallel arm resonator is disposed outside the propagation path of the series arm resonator provided in the at least one input / output unit. A surface acoustic wave element which is arranged so as to be located on an extension of the linear signal line connecting a series arm resonator.
JP2001272408A 2001-09-07 2001-09-07 Surface acoustic wave device Expired - Lifetime JP3439750B2 (en)

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Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
塩崎 忠 監修,圧電材料の製造と応用,株式会社シーエムシー,1984年 2月24日,p.153−154
結城 佑,奥野和雄,小林洋一,狭帯域高安定弾性表面波フィルタ,エレクトロニク・セラミクス,1977年 1月 1日,第8巻冬号(通巻46号),p.65−70

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