JP3428974B2 - Projection exposure method and projection exposure apparatus having the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure method and a projection exposure apparatus using the same, and particularly in the manufacture of semiconductor elements, an electronic circuit pattern formed on a reticle surface is projected onto a wafer surface by a projection optical system. When reducing and projecting, surface position information (height information) of a plurality of points on the wafer surface can be detected, and the exposure area of the wafer can be easily positioned on the best imaging plane of the projection optical system. projection exposure method the projected image formed is obtained and to a projection exposure apparatus using the same.

[0002]

2. Description of the Related Art In recent years, projection exposure apparatuses for manufacturing semiconductor devices have been required to miniaturize electronic circuit patterns, for example, submicron to half-micron miniaturization and high integration. Accordingly, the projection optical system is required to have a higher resolution than ever before. Therefore, for example, in the projection optical system, the NA is increased and the exposure wavelength is shortened.

Generally, if the NA is increased to increase the resolution of the projection optical system, the allowable depth of focus for pattern projection becomes shallow. For this reason, many projection exposure apparatuses use a surface position detection device that detects the focal plane position of the projection optical system. The surface position detection device not only detects and adjusts the height position (surface position) information of the exposure area on the wafer surface for pattern transfer, but also tilts the exposure area on the wafer surface for pattern transfer. It is desired that the above can be detected and adjusted at the same time.

Conventionally, as a surface position detecting device of the focal plane, a plurality of air sensors are provided in the peripheral portion of the exposure area on the wafer surface, and the exposure area is obtained from the height information of the peripheral area of the exposure area obtained by the air sensors. There is known a method of calculating and adjusting the inclination and height position of the.

In Japanese Patent Publication No. 10361/1990, the height position of the central portion of the exposure area on the wafer surface is detected and adjusted by a height position detection optical system of an oblique incidence type, and another type of oblique incidence type is used. The tilt in the exposure area is calculated and adjusted using a tilt detection optical system (collimator).

The applicant of the present invention, in Japanese Patent Application No. 3-157822, forms a plurality of measurement points in an exposure area in a projection optical system of an oblique incidence type, and calculates and adjusts the tilt and height position of the exposure area. Has proposed a surface position detecting device.

Further, the applicant of the present invention has provided a height position detecting optical system for measuring a plurality of points in an exposure area on a wafer in Japanese Patent Laid-Open No. 102518/1990, and based on the height position information of the plurality of points, the inside of the exposure area is determined. We have proposed a surface position detection device that calculates and adjusts the inclination and height position of the.

[0008]

Generally, in an optical detection system, the influence of interference between the light reflected on the surface of the resist coated on the wafer and the light reflected on the wafer substrate surface. Is a problem. The effect of this interference is
In the above-mentioned conventional example, the pattern-specific offset is measured in advance at each of a plurality of measurement points, and the measurement values at a plurality of points are corrected during the exposure of each shot so that the wafer surface position is corrected. I am measuring.

However, in the peripheral portion of the wafer, a part of the plurality of measurement points may be located in the wafer region where the offset measurement is not performed. In such a case, it is necessary to measure the surface position of the wafer using a plurality of remaining measurement points excluding the measurement points located in the wafer area where there is no pattern. Therefore, in the peripheral portion of the wafer, the number of measurement points decreases, and the correction accuracy of the surface position tends to deteriorate.

An object of the present invention is to form a plurality of surface position detecting mechanisms in an exposure area on a wafer, to enable correction accuracy of surface position even at the peripheral portion of the wafer and at the central portion, and to obtain a pattern with high resolution. A projection exposure method that can be easily obtained and a projection exposure apparatus using the same.

[0011]

A projection dew according to the invention of claim 1
The optical device method includes a first pattern drawn on a reticle and
Simultaneously with the second pattern, which has a deeper depth of focus than the first pattern, through the projection optical system , a pattern having a step on the wafer is formed.
Before projecting onto the turn area , the pattern area of the wafer is
The surface positions of the projection optical system in the optical axis direction are measured at a plurality of positions in the area, and the pattern of the wafer is measured based on the measurement.
Projection exposure for aligning the light field with the image plane of the projection optical system
In the method , the plurality of locations in the pattern area are
It has 5 points corresponding to the four corners and the center of a fixed quadrangle.
In order to measure the surface position of multiple points, in the pattern area
Project each reflected light flux from the multiple points on the detection surface,
Based on surface position measurement at a plurality of points,
The first pattern of the reticle in the pattern area is projected.
The feature is that the surface position of the shadowed portion is matched with the image surface .

[0012] The projection exposure apparatus of a second invention,請Motomeko
It is characterized in that the projection exposure method described in 1 can be performed .

A projection exposure apparatus according to a third aspect of the present invention is a reticle.
Each pattern on the wafer by the projection optical system
In a projection exposure apparatus for sequentially projecting onto a region, a light beam is obliquely projected onto each measurement point at the center and four corners of the pattern region of the wafer, and a light beam reflected from each position within the pattern region is projected onto a detection surface. , each measurement of the pattern area
It has a position detection system of an oblique incidence method for measuring a position change of a position in the vertical direction as a position change of each of the reflected light beams on the detection surface . In front of the topography in the pattern area
Above and below each of the measurement points in the pattern area of the wafer
The measurement error due to the topography when measuring the position change of the direction is obtained in advance, the position of the oblique incidence method
Each measurement point of the pattern area on the wafer by the detection system
Measurement due to the topography from measurements on
Correct the error, and based on each measurement value that corrected the error,
Together, the reticle pattern in the pattern area of the wafer is
It is characterized in that the region of the turn where the finest pattern is to be projected is located at the center within the allowable depth of focus of the projection optical system.

According to a fourth aspect of the present invention, there is provided a device manufacturing method,
Using the projection exposure apparatus according to claim 2 or 3, a reticle pattern
Exposing the wafer by turns and exposing the exposed wafer
And a step of developing .

[0015]

[0016]

[0017]

[0018]

1 is a schematic view of a main part showing an embodiment of a projection exposure apparatus with a surface position detecting device, and FIG. 2 is an enlarged explanatory view of a part of FIG.

In FIG. 1, 1 is a reduction type projection optical system (projection lens system), and Ax is the optical axis of the projection optical system 1. 1a
Is a reticle, a circuit pattern is formed on the surface thereof, and the reticle is placed on the reticle stage 1b. 1
Reference numeral c is an illumination system, which uniformly illuminates the surface of the reticle 1a. The projection optical system 1 reduces and projects the circuit pattern on the surface of the reticle 1a onto the surface of the wafer 2. The wafer 2 is adsorbed and fixed on the surface of the wafer stage 3. The wafer stage 3 is movable in two directions (x, y directions) in a plane (in an xy plane) orthogonal to the optical axis Ax direction (z direction) of the projection optical system 1 and the optical axis Ax, and The tilt can be adjusted with respect to a plane (xy plane) orthogonal to Ax. Thus, the surface position of the wafer 2 placed on the surface of the wafer stage 3 can be adjusted arbitrarily. A stage control device 4 drives and controls the wafer stage 3 based on a signal from a focus control device 18, which will be described later.

SA is light irradiation means, SB is projection means, SC
Is photoelectric conversion means, and these constitute a part of a surface position detecting device for detecting surface position information of the surface of the wafer 2.
The projection means SB and the photoelectric conversion means SC are combined with the detection means SB.
It constitutes C.

In this embodiment, a circuit pattern on the surface of the reticle 1a is projected on the wafer 2 by the projection optical system 1 by using a surface position detecting device.
When projecting onto the surface, the wafer stage 3 is drive-controlled so that the exposure area on the surface of the wafer 2 is located within the allowable depth of focus of the projection optical system 1. Then, the wafer stage 3 is moved to X
The rectangular pattern regions (shots) 39 are sequentially formed on the surface of the wafer 2 by sequentially moving them on the -Y plane.

Next, each element of the surface position detecting device of this embodiment will be described. First, the light irradiation means SA for making a plurality of light beams incident on the surface of the wafer 2 will be described.

Reference numeral 5 denotes a light source, which is composed of a white lamp or an illumination unit configured to emit light having a plurality of different wavelengths. Reference numeral 6 denotes a collimator lens, which emits the light flux from the light source 5 as a parallel light flux whose cross-sectional intensity distribution is substantially uniform. Reference numeral 7 is a prism-shaped slit member, and a pair of prisms are attached so that their slopes face each other, and a plurality of openings (5 pinholes) 71 to 75 are shielded with chrome or the like on this attachment surface. It is provided using a film.

FIG. 3 is a schematic view of the slit member 7 as viewed from the collimator lens 6 side. As shown in FIG. 3, the pinhole 71 includes a plurality (four) of minute pinholes 711.
It consists of ~ 714. Other pinholes 72, 73,
Similarly, 74 has a plurality (four) of minute pinholes 721 to 7
24, 731 to 734, 741 to 744.

Reference numeral 8 denotes a lens system, which comprises both telecentric systems and has a plurality of pinholes 71 to 7 of the slit member 7.
Five independent light beams 71a to 75a that have passed through 5 are guided to five measurement points 19 to 23 on the surface of the wafer 2 via the mirror 9.

At this time, with respect to the lens system 8, the plane in which the pinholes 71 to 75 are formed and the plane including the surface of the wafer 2 are in the condition of Shine Fluke (Scheimpflug's
condition) is set to be satisfied. Here, if the image forming magnifications of the pinholes _{71 to 75} by the lens system 8 are β _{8 (71)} to β _{8 (75)} , β _{8 (71)} <β _{8 (72} ) <β _8
(73) <β8 ₍₇₄₎ <β8 ₍₇₅₎ , and the closer the pinhole is to the lens system 8, the larger the imaging magnification.

In the present embodiment, the minute pinhole 7
11-714, 721-724, 731-734, 74
Since 1 to 744 and 751 to 754 are very close to each other, they have substantially the same imaging magnifications β _{8 (71)} , β _{8 (72)} ,
It can be regarded as β _{8 (73)} , β _{8 (74)} , and β _{8 (75)} .

In this embodiment, fine pins are formed on the surface of the wafer 2.
Holes 711-714, 721-724, 731-73
4,741 to 744 and 751 to 754 are close to each other.
Small pinholes 711 so that they are projected in almost the same size
~ 714, 721 to 724, 731 to 734, 741
The diameter D of 744, 751 to 754 is D₇₁= D
₇₁₁~ D₇₁₄, D₇₂= D₇₂₁~ D₇₂₄, D₇₃= D₇₃₁~
D₇₃₄, D₇₄= D₇₄₁~ D₇₄₄, D₇₅= D₇₅₁~ D₇₅₄age
Diameter D to satisfy the following relation₇₁~ D₇₅Set
There is.

D ₇₁ : D ₇₂ : D ₇₃ : D ₇₄ : D ₇₅ =
β _{8 (75)} : β _{8 (74)} : β _{8 (73)} : β _{8 (72)} : β _{8 (71) Further} , this lens system 8 is internally provided with N of each luminous flux 71a to 75a.
It has an aperture stop 40 for aligning A.

The luminous fluxes 71a, 72a, 73a, 74
a, 75a are measuring points 19, 20,
21, 22, 23 are formed.

Each measurement point 19, 20, on the wafer 2 surface
Micro pinholes 711 to 714, 721 to 724, 731 to 734, 7 are formed in 21, 22 and 23 as shown in FIG.
Images 41 to 744 and 751 to 754 are projected.
In the present embodiment, the light irradiation means SA is composed of the above elements 5, 6, 7, 8, and 9.

In this embodiment, the angle of incidence φ of each light beam from the light irradiating means SA on the surface of the wafer 2 (the angle formed by the perpendicular to the wafer surface) is φ = 70 ° or more. As shown in FIG. 2, a plurality of pattern areas (exposure area shots) 39 are arranged on the wafer 2 surface. 5 that passed through the lens system 8
The two light beams 71a to 75a are incident on the measurement points 19 to 23 of the pattern region 39, which are independent of each other.

The five light beams 71a to 75a incident on the surface of the wafer 2 are perpendicular to the wafer 2 (direction of the optical axis Ax).
When observed from above, the wafer 2 was rotated by θ ° (for example, θ = 22.5 °) in the XY plane from the X direction (shot arrangement direction) so as to be observed independently from each other as shown in FIG. It is incident from the direction.

As a result, the applicant of the present invention has filed Japanese Patent Application No. 3-1578.
As proposed in No. 22, the spatial arrangement of each element is made appropriate to facilitate highly accurate detection of surface position information.

In this embodiment, each of the above elements 5, 6, 7,
A plurality of light fluxes (pinholes) are incident on the surface of the wafer 2 by the light irradiation means SA composed of 8 and 9. In the present embodiment, the number of measurement points on the surface of the wafer 2 is not limited to five, and any number may be used.

Next, a plurality of reflected light beams from the surface of the wafer 2 are converted into C
The projection means SB that guides light onto the detection surface 17 of the photoelectric conversion means SC as a position detection element made of a CD to form an image will be described.

Reference numeral 11 denotes a light receiving lens, which is composed of a bi-telecentric system and reflects five reflected light beams from the surface of the wafer 2 through the mirror 10. And the light receiving lens 11
Forms a pinhole image at each position 24-28 with respect to each measurement point 19-23.

Reference numeral 41 denotes a stopper diaphragm provided on the light-receiving lens 11, which is commonly provided for each of the measurement points 19 to 23, and the respective light fluxes on the wafer 2 are caused by the circuit pattern existing on the wafer 2. Higher-order diffracted light, which becomes noise light when reflected, is cut. Each position 24
The luminous fluxes from the pinhole images 28 to 28 are incident on five independently provided correction optical systems 12 to 16.

Since the light receiving lenses 11 of the correction optical systems 12 to 16 are both telecentric systems, their optical axes are parallel to each other and the pinhole images formed at the respective positions 24 to 28 are detected by the photoelectric conversion means SC. The images are re-imaged on the surface 17 so that the spot lights have the same size. The photoelectric conversion means SC is composed of a single two-dimensional CCD. In this embodiment, the above-mentioned elements 10, 11, 12 to 16 constitute a projection means SB.

The correction optical systems 12 to 16 each have a plane-parallel plate having a predetermined thickness and a lens system.
It is coaxial or eccentric with respect to the optical axis of 1. At this time, the plane parallel plate is used to correct the optical path length of each lens system. In addition, the lens system includes a detection surface 17 of each measurement point 19 to 23.
It is provided for correction so that the imaging magnification (projection magnification) above becomes substantially equal.

That is, in the oblique incidence imaging optical system in which a plurality of light beams are obliquely incident on the wafer surface as in the present embodiment, a plurality of measurement points 19 to 23 having different distances from the light receiving lens 11 are located in the photoelectric conversion means SC. When forming an image on the detection surface 17, the image forming magnifications differ from each other.

Therefore, in this embodiment, correction optical systems 12 to 16 are provided for the respective measurement points, and the respective measurement points 19 to 2 are provided.
The projection magnifications of No. 3 and No. 3 on the detection surface 17 are made substantially equal (this correction optical system is described in detail in Japanese Patent Application No. 2-44236 of the present applicant).

At this time, each measurement point 19 on the wafer 2 surface is measured.
The position of the pinhole image (spot light) incident on the detection surface 17 is changed depending on the surface positions (height direction, optical axis Ax direction) of 23. The photoelectric conversion means SC detects the position change of the pinhole image at this time. As a result, in this embodiment, the surface position information of the measurement points 19 to 23 on the wafer 2 surface can be detected with the same accuracy.

Further, the measurement points 19 to 23 on the surface of the wafer 2 and the detection surface 17 of the photoelectric conversion means SC are conjugated to each other via the projection means SB (for each measurement point 19 to 23). I am performing fall correction). As a result, the position of the pinhole image on the detection surface 17 does not change due to the local inclination of each of the measurement points 19 to 23, and the optical axis A on the surface of the wafer 2 does not change.
The position of the pinhole image on the detection surface 17 is changed in response to the local change of the height position of each measurement point in the x direction, that is, the height of the measurement points 19 to 23. The photoelectric conversion means SC detects the incident position information of the pinhole image incident on the detection surface 17. The incident position information of the pinhole image at each measurement point 19 to 23 obtained by the photoelectric conversion unit SC is input to the focus control unit 18.

The focus control means 18 is a photoelectric conversion means S.
Height information (surface position information) of each measurement point 19 to 23 from C
Then, the position information of the surface of the wafer 2, that is, the position in the optical axis Ax direction (z direction), the inclination with respect to the XY plane, and the like are obtained.

Then, a signal relating to the drive amount of the wafer stage 3 is input to the stage control device 4 so that the surface of the wafer 2 substantially coincides with the projection surface of the reticle 1a by the projection optical system 1. The stage controller 4 drives and controls the wafer stage 3 according to an input signal from the focus controller 18 to adjust the position and orientation of the wafer 2.

In this embodiment, regarding the light receiving lens system 11,
The measurement points 19 to 23 and the positions 24 to 28 on the surface of the wafer 2 are
Included surface means Shine Fluke's condition (Scheimpflug's
condition) is set to be satisfied. here,
Each of the points on the measurement points 19 to 23 by the light receiving lens system 11 is
Imaging magnification of hole image β_{11 (19)}~ Β_{11 (23)}Then β
_{11 (19)}<Β_{11 (20)}<Β_{11 (21)}<Β_{11 (22)}<Β_{11 (23)}And
The closer the pinhole is to the light-receiving lens system 11, the greater its imaging magnification.
Is getting bigger.

On the other hand, each correction optical system 12, 1
Positions 24, 25, 26, 2 according to 3, 14, 15, 16
Incident position of each pinhole image formed on 7, 28
The imaging magnification for 29, 30, 31, 32, 33 is β
_{12 (24)}, Β_{13 (25)}, Β_{14 (26)}, Β _{15 (27)}, Β_{16 (28)}Tosu
Then, each of the measurement points 19, 20, 21, 22, 23
Incident position of pinhole image 29, 30, 31, 32, 33
Between the combined imaging magnifications for
Image magnification β_{12 (24)}, Β_{13 (25)}, Β_{14 (26)}, Β_{15 (27)}, Β
_{16 (28)}Has been set.

Β _{11 (19)} × β _{12 (24)} = β _{11 (20)} × β _{13 (25)}
= Β _{11 (21)} × β _{14 (26)} = β _{11 (22)} × β _{15 (27)} = β _{11 (23)}
× β _{16 (28) In} this embodiment, as disclosed in the above-mentioned Japanese Patent Application No. 3-157822, the correction optical systems 12 to 16 are used to select a plurality of measurement points in the oblique projection type projection optical system. However, the resolution and accuracy regarding the height detection of each measurement point are made substantially equal.

Before describing the features of this embodiment, the case of measuring the topography in the test area on the wafer surface in the conventional surface position detecting apparatus will be described.

In FIG. 20, the applicant of the present invention discloses Japanese Patent Laid-Open No. 2-19813.
In the surface position detecting device proposed in Japanese Patent No. 0, the wafer having the pattern 52 formed by the resist 53 applied in the previous step on the substrate 51 has a constant beam diameter and a uniform intensity distribution within the beam diameter. A schematic diagram showing a state in which a luminous flux 54 having the same enters and is reflected by the surface of the resist 53, the pattern 52 and the surface of the substrate 51 to form a reflected luminous flux 540 having different intensity distributions within the beam diameter. Is.

At this time, the step difference of the pattern 52 is small and the surface of the resist 53 is flat because the resist 53 is applied sufficiently thickly.

Further, FIG. 21 shows a resist 53 and a pattern 52.
And a reflected light flux 540 formed by being reflected on the surface of the substrate 51.
, But the intensity distribution 5 when it is focused on the light receiving element (not shown)
It is a figure which shows 7.

In FIG. 20, a light beam 54 having a constant beam diameter and a uniform intensity distribution within the beam diameter is a resist 53.
Is obliquely incident on the coated wafer. At this time, the light flux 54 is a component 55 reflected on the surface of the resist 53.
0 and 560, a component 55 that passes through the resist 53, is reflected on the surface of the substrate 51, and then goes out of the resist 53 again.
1 and a component 561 that passes through the resist 53, is reflected on the surface of the pattern 52, and then goes out of the resist 53 again.

In this way, the reflected light flux 54 reflected by the wafer
0 is a combination of the component 550 reflected on the surface of the resist 53 and the component 551 reflected on the surface of the substrate 51, and the component 560 reflected on the surface of the resist 53 and the component reflected on the surface of the pattern 52. 561 and 561 are combined.

Therefore, in FIG. 20, the component 560 and the pattern 5 reflected on the surface of the resist 53 due to the interference of the thin film.
The reflectance of the light flux obtained by combining the component 561 reflected on the surface of No. 2 is the component 5 reflected on the surface of the resist 53.
Assuming that the reflectance of 50 and the component 551 reflected on the surface of the substrate 51 are higher than the reflectance of the combined light flux (there may also be the opposite depending on the interference condition of the thin film), as shown in FIG. The reflected light flux 540 showing the intensity distribution 57 is formed.

In this way, the intensity distribution within the beam diameter of the reflected light flux changes depending on the position of the pattern arranged within the beam diameter of the incident light flux. Further, even if the position of the pattern arranged within the beam diameter of the incident light beam is the same, if the thickness of the resist changes and the interference condition of the thin film changes, the intensity distribution within the beam diameter of the reflected light beam changes.

Then, when the center of gravity of the intensity distribution within the beam diameter of the reflected light beam imaged on the light receiving element is detected and measured as the incident position of the reflected light beam on the light receiving element, the pattern 52 and the incident light beam are relative to each other. Due to the change in the position and the thickness of the resist, the center of gravity 58 of the intensity of the reflected light flux changes while the wafer is at the same position in the optical axis direction AX of the projection lens, and the measured value is the relative position between the pattern 52 and the incident light flux and the thickness of the resist. It comes to have the detection error according to.

That is, as shown in FIG. 20, pattern 5 is used.
When the step difference of 2 is small and the resist 53 is applied sufficiently thickly, the surface of the resist 53 is flat, and the center of gravity 58 of the intensity of the reflected light flux is detected even in the topographically equal area. If this method is used, a detection error may occur when measuring the topography of the wafer surface.

Therefore, in this embodiment, C is used as the position detecting means.
By using a CD sensor and performing image processing on the image of the reflected light beam incident on the detection surface 17, a measurement error due to distortion of the reflected light beam image caused by an optical factor (such as thin film interference due to a resist) on the wafer is removed. Accurately measure the topography in the area to be examined.

Next, the structural features of this embodiment will be described.

FIG. 5 is a schematic sectional view showing an optical path when a light beam is incident on the wafer 2 shown in FIG. In FIG. 5, the resist 53
And the pattern 52 formed in the previous process is applied to the substrate 51.
A plurality of (four) minute light fluxes 611, 612, 613, 6 having substantially the same intensity, which are formed by a plurality (four) of minute pinholes having one pinhole in the wafer 2 above.
14 is incident, and the plurality (four) of minute light beams 611 to 611 are incident.
614 is the surface of the resist 53, the pattern 52 and the substrate 5.
A plurality of minute reflected light beams 615, 616, 617, 6 having different intensities by being reflected by the surface of No. 1
18 shows a state in which 18 is formed.

At this time, the step difference of the pattern 52 is small and the surface of the resist 53 is flat because the resist 53 is applied sufficiently thickly.

FIG. 6 shows the state of the intensity distribution when a plurality of minute reflected light beams 615 to 618 reflected and formed on the surfaces of the resist 53, the pattern 52 and the substrate 51 are imaged on the detection surface 17. It is a figure.

In FIG. 5, a plurality of minute light beams 611, 61 formed by these minute pinholes and having substantially the same intensity.
2, 613 and 614 are obliquely incident on the wafer on which the resist 53 is applied. At this time, the minute light flux 61
1 and 612 are components 6 reflected on the surface of the resist 53.
50 and 660, and the component 6 that passes through the resist 53, is reflected on the surface of the substrate 51, and then goes out of the resist 53 again.
51 and 661. In addition, minute luminous fluxes 613 and 6
14 are components 670 and 680 which are reflected on the surface of the resist 53, and a component 67 which passes through the resist 53 and is reflected on the surface of the pattern 52 and then goes out of the resist 53 again.
1,681.

As described above, the minute reflected light beams 615 and 616 reflected by the wafer 2 are composed of the components 650 and 660 reflected on the surface of the resist 53 and the components 651 and 661 reflected on the surface of the substrate 51, respectively. To be done. The minute reflected light beams 617 and 618 reflected by the wafer 2 are reflected by the resist 53.
Components 670, 680 and pattern 52 reflected on the surface of the
And the components 671 and 681 reflected on the surface of each are combined.

Therefore, in FIG. 5, the reflectance of the minute reflected light beams 617 and 618 reflected by the wafer 2 due to the interference of the thin film is
Assuming that the reflectance is higher than that of the minute reflected light beams 615 and 616 reflected by the wafer (there may be the opposite depending on the thin film interference condition), a plurality of minute reflected light beams 615 to 61 as shown in FIG.
Within 8, there is a deviation between the intensities of the light beams.

At this time, considering the center of gravity 601 of the intensities of the plurality of minute reflected light beams 615 to 618 in which the intensities of the respective light beams are deviated on the detection surface 17 in FIG.
Similarly to the center of gravity 58 of the intensity distribution 57 of the reflected light flux 540 described above, the intensity of each of the plurality of minute reflected light fluxes 615 to 618 depends on the positions of the patterns arranged at the reflection points of the plurality of minute light fluxes 611 to 614. Change. Further, even if the positions of the patterns arranged at the reflection points of the plurality of light beams 611 to 614 are the same, when the thickness of the resist changes and the interference condition of the thin film changes, the intensities of the plurality of minute reflected light beams 615 to 618 change. (The light fluxes 615 and 616, and the light fluxes 617 and 618 have different intensities).

Therefore, in this embodiment, a plurality of minute reflected light beams 615, 6 are formed by using CCD sensors as position detecting elements.
16, 617, 618 individual centers 605, 606, 6
07,608 is required. Individual centers 605,60
6,607,608, the average value of these centers is set as the center 600 of the whole. The center 600 of the entire body always shows a constant value even if there is a deviation between the intensities of the plurality of minute reflected light beams 615 to 618.

Next, in FIG. 5, one minute light beam 614 of the plurality of minute light beams 611 to 614 is reflected at the boundary between the substrate 51 and the pattern 52, and the intensity distribution is distorted in the minute reflected light beam 618. Will be described.

FIG. 7 shows a plurality of minute reflected light beams 615 to 617 formed by being reflected on the surfaces of the resist 53 and the substrate 51.
FIG. 6 is an explanatory diagram showing a state in which an image is formed on a detection surface 17 of a minute reflected light flux 618 that is formed by being reflected at the boundary between the resist 53 and the substrate 51 and the pattern 52.

In this case, a plurality of minute light beams 615 to 618
Since the center of is calculated individually, the measurement error due to the distortion of the intensity distribution of the light flux 618 is reduced to 1/4 due to the averaging effect.

Furthermore, a plurality of minute reflected light beams 615 to 618
When obtaining the individual centers 605 to 608 of the above, the method described in Japanese Patent Application No. 4-108634 previously proposed by the present applicant can be used to perform measurement with significantly less error even if the intensity distribution of the reflected light flux is distorted. I am trying.

That is, each minute reflected light beam 615-6
18, a method of determining the center from the intersection of the slice level and the edges on both sides of the reflected light beam image by setting a constant slice level, and a method of similarly obtaining the center from the intersection of the slice level and one side edge of the reflected light beam image, A method of determining the center from the area surrounded by each level and the reflected light flux image by setting the slice level of a fixed ratio to two points, the upper limit and the lower limit, and storing the reflected light flux image when the test surface is an ideal mirror surface. For example, a method of obtaining the center by matching with a reflected light flux image having a distortion of the intensity distribution is used.

As described above, in this embodiment, the CCD sensor is used as the position detecting element, and the image of the reflected light flux on the detection surface 17 is detected by the image processing, and an appropriate number of a plurality of minute light fluxes used for the detected light flux are used. By selecting, the topography in the inspection area on the wafer is accurately measured.

Next, a method of measuring a plurality of points in the wafer 2 and measuring the topography in the region to be inspected on the wafer 2 and reflecting the measured topographic values at the respective measurement points will be described.

FIG. 8 is an explanatory view showing the positional relationship between a predetermined pattern region 39 on the wafer 2 shown in FIG. 2, a plurality of measurement points 19 to 23, and a grid 80 for topography measurement in the region to be inspected. Is.

In the state shown in FIG. 8, the predetermined pattern area 39 of the wafer 2 is different from the pattern on the reticle 1a.
Aligned with respect to the XY plane. In this embodiment, the grating 80 in the drawing includes (may not include) a plurality of measurement points 19 to 23, and the height position is fixed in the direction of the optical axis Ax of the projection lens system 1 of the wafer 2. In this state, the wafer stage 3 is moved in the XY plane, and the surface positions are sequentially measured using the measurement points 21. At this time, the number of grid points for measuring the surface position of the pattern area 39 and the interval between the grid points are appropriately selected to accurately measure the topography in the pattern area 39.

FIG. 9 (A) is a schematic view showing the topography of the pattern area 39, and FIG. 9 (B) is shown in FIG. 9 (A).
It is a figure which shows the topography cross section in the position of the dashed-dotted line shown in FIG.

In this embodiment, the offset value (correction amount) for detecting the surface position of each pattern area 39 on the wafer 2 is calculated using the plurality of surface position data.

FIG. 10 is a flow chart showing the method of calculating the offset value (correction amount). The method of calculating the offset value will be described below with reference to the flowchart of FIG. 10 and FIGS.

First, the wafer stage 3 is driven by the stage controller 4 to move the wafer 2 in the XY plane, so that a predetermined pattern area 39 (for example, the wafer 3) on the wafer 2 with respect to the pattern on the reticle 1a is moved. Align the first shot above).

Next, at this position, the surface position in the pattern area 39 on the wafer 2 is measured at a plurality of measurement points 19, 20, 21 ,.
22 and 23, and these measured values are f ₁₉ , f ₂₀ , f
₂₁ , f ₂₂ , and f ₂₃ . Next, the projection lens 1 of the wafer 2
With the optical axis AX direction, that is, the height direction fixed,
The wafer 2 is sequentially moved in the XY plane so that each grid point (n pieces) of the grid 80 in FIG. 8 coincides with the pinhole image formation position (incident of a plurality of minute light fluxes) at the measurement point 21.

The surface of the wafer 2 is measured at the measurement points 21 for each of these n grid points to obtain n measurement values (plane position data). These n measured values Aj (j = 1 to n)
And

At this time, a plurality of measurement points 19, 20, 21,
The measured values of 22 and 23 are calibrated with respect to the xy plane on which the stage 3 is driven so that the measured values show the same measured value.

That is, a plurality of measurements out of n grid points
There are grid points that match points 19, 20, 21, 22, 23
If present, the measured values of the corresponding grid points
A_o, A_p, A_q, A_r, A_sThen calibration
Is not done, f₁₉≠ A_o, F₂₀≠ A_p, F_{twenty one}= A_q, F_{twenty two}≠ A_r, F_{twenty three}≠
A_s There is a relationship of (when calibrated, f
₁₉= A_o, F₂₀= A_p, F _{twenty one}= A_q, F_{twenty two}= A_r, F_{twenty three}= A
_sBecomes ).

Here, C ₁₉ = f ₁₉ −A _o , C ₂₀ = f ₂₀ −A _p , C ₂₁ = f ₂₁ −A
_{q = 0 C 22 = f 22} -A r, as C ₂₃ = f ₂₃ -A _s, a new measure that corrects the measurement values of the plurality of measurement points 19,20,21,22,23 as follows Value F ₁₉ , F
₂₀ , F ₂₁ , F ₂₂ , and F ₂₃ .

That is, F ₁₉ = f ₁₉ −C ₁₉ F ₂₀ = f ₂₀ −C ₂₀ F ₂₁ = f ₂₁ F ₂₂ = f ₂₂ −C ₂₂ F ₂₃ = f ₂₃ −C ₂₃ Calculate.

In addition, a plurality of measurement points 1 out of the n grid points
When there is no grid point that matches 9, 20, 21, 22, 23, the plurality of measurement points 19, 20, 21, 22, 22
23. Measured values A _{o (inter.)} , A at a plurality of measured point positions obtained by interpolation from measured values of grid points in the vicinity of each
_{p (inter.), A q} (inter.), A r (inter.), with A s _(inter.), in the same manner as described above, the new measured values F ₁₉ performs correction, F _20, F ₂₁ , F ₂₂ , F ₂₃ are obtained.

This calibration is adjusted in advance so that the plurality of measurement points 19, 20, 21, 22, 23 of this embodiment show the same measurement values with respect to the xy plane driven by the stage 3. If so, there is no need to do it.

At this time, F₁₉= F₁₉ F₂₀= F₂₀ F_{twenty one}= F_{twenty one} F_{twenty two}= F_{twenty two} F_{twenty three}= F_{twenty three} As below the calculation of offset correction of topography
To do. (In FIGS. 10, 11, 14, 15, 16
Floater in this calibrated state
Indicated. ) Next measured n data A_jLeast-squares plane approximation to
The linear component of the pattern area 39 on the wafer 2
Using n data A_JAnd 5 data F_{1 9}~ F_{twenty three}
Is corrected to obtain new n data A ′._jAnd 5 de
Data F '₁₉~ F ' _{twenty three}To calculate.

The area 9 in the pattern area 39 of FIG.
Reference numeral 1 is a topographically convex portion in which a memory portion and the like are formed, and region 92 is a topographically concave portion in which scribe lines, bonding pads and the like are formed.

[0093] At this time, seek direction shown in topography section 93 in FIG. 9 (B), the other words in the height direction, 'maximum value A of the _{j' max} n pieces of data A, the minimum value A _'min, these average a _'center (data a' becomes the median value of _j) 9
5 is calculated, and slice levels 94 and 96 are set at regular intervals centered on this value.

Slice levels 94, 9 at regular intervals
Let S _upper and S _lower be the range sandwiched between 5, 96
Within the newly calculated n data A ′ _j , the range S _upper
Let A ′ _k be the data contained in A, and let A ′ ₁ be the data contained in the range S _lower (where k = 1 to h, 1 = 1 to i,
h + i = n), respectively to calculate the h pieces of data A 'average value A _{k' upper,} i pieces of data A _'1 of the average value A' _lower.

For example, when the wiring pattern is transferred onto the convex area 91 in which the memory portion is formed, the depth of focus of the wiring pattern is smaller than that of the pattern transferred to the concave area. Multiple measurement points for each 1
The offset value (correction amount) is F ₁₉ ′ −A ′ _upper F ₂₀ ′ −A ′ _upper F ₂₁ ′ −A ′ _upper F ₂₂ ′ −A ′ _upper for the measured values of 9, _{20, 21, 22, 23.} set to F ₂₃ '-A' _upper, subtracting the measured value.

[0096] That _{is, F 19 - (F 19 '} -A' upper) F 20 - (F 20 '-A' upper) F 21 - (F 21 '-A' upper) F 22 - (F 22 '-A performs control of the surface position of the pattern region 39 with a value of _{- 'upper) F 23 (F} 23' -A 'upper), to the pattern region 91 and the pattern area 92, performing pattern transfer simultaneously.

As the offset amount (correction amount) when the wafer surface position of the remaining pattern area on the wafer 2 is detected, a plurality of measurement points 19 to 23 of each pattern area are used.
The measured values of (F ₁₉ ′ −A ′ _upper ) to (F ₂₃ ′ −
_A'upper ) is subtracted to enable topographical detection of the surface position of the convex region 91.

Similarly, when the bonding pad is transferred onto the recessed area 92, in this case, of course, the depth of focus of the bonding pad pattern is larger than that of the pattern transferred onto the protruding area 91. Since it is small, the offset value (correction amount) is F ₁₉ ′ -A ′ _lower F ₂₀ ′ −A ′ _lower F ₂₁ ′ −A ′ for the measured values at each of the plurality of measuring points 19, 20, 21, 22, _{23. lower} F ₂₂ ′ -A ′ _lower F ₂₃ ′ -A ′ _lower .

The procedure described above is pre-programmed in the focus control device 18 of FIG. 1, and the value of the offset amount (correction amount) is of course the focus control device 1.
8 memory.

The value of the offset amount (correction amount) is (F ₁₉ ′ -A ′ _upper ) to (F ₂₃ ′ -A ′ _upper ) or (F ₁₉ ′ -A ′ _lower ) to (F ₂₃ ′ -A ′ _lower ). Whether to use _lower ) is pre-specified in the program by each step.

Then, based on the surface position data of a plurality of measurement points in the pattern area on the wafer 2 obtained by the apparatus shown in FIG. 1 and the above-described offset amount (correction amount), the pattern area (inspected surface position) The surface position is detected, and the wafer 2 is moved in the optical axis AX direction and the plane orthogonal to the optical axis AX (xy) so that the difference between the surface position and the known image surface position of the projection lens 1 becomes zero. Tilt to reticle 1
The pattern image on a is focused on the pattern area of the wafer 2.

At this time, the surface position of the pattern area (inspection surface position) is defined as the least square plane calculated from the surface position data of a plurality of measurement points in the pattern area.

Then, such an operation is sequentially performed for each pattern area on the wafer 2, and the reticle 1 is moved to each area.
The pattern on a is projected and transferred.

The above-described measurement for calculating the offset amount (correction amount) does not have to be performed for each wafer, and may be performed using at least one of a plurality of wafers processed in the same process. Therefore, the correction amount is calculated using the predetermined pattern area of the first wafer of one lot and stored in the memory, and the offset stored in the memory is detected when the second and subsequent wafer surface positions of the same lot are detected. The amount (correction amount) may be used.

Alternatively, it is sufficient to perform the measurement for calculating the offset amount (correction amount) on the first wafer every time the reticle type is exchanged. In any case,
The impact on overall throughput is minimal.

FIG. 11 is a flow chart showing the exposure operation when the offset amount (correction amount) is calculated for each lot. The offset amount (correction amount) calculation step 110 in the drawing is shown in FIG. It is executed in the sequence shown.

Further, in this embodiment, each range S _upper ,
Of the offset amounts (correction amounts) for S _lower , which value to use in the process is selected and instructed in advance in the program for performing pattern exposure. Alternatively, it may be automatically selected and determined.

The first is to simply range S _upper and range S _lower.
Among them, the offset amount (correction amount) having the larger data number is automatically selected.

[0109] Second, determine the least square plane of the data measured in response to the lattice point, the data after correcting the linear components A _'j and (j = 1 to n), these range S
What is included in _upper is A ′ _k , and what is included in range S _lower is A ′ ₁ (where k = 1 to h, 1 = 1 to i,
h + i = n), 'the average value A _{k' u pper} h pieces of data A, respectively, to calculate the _lower 'average value A _1' i pieces of data A.

At this time, each of the plurality of measuring points 19, 20,
The offset value (correction amount) is F ₁₉ ′ − (k × A ′ _upper + 1 × A ′ _lower ) / n F ₂₀ ′ − (k × A ′ _upper + 1 × A ′) with respect to the measured values of 21, 22, 23. _lower ) / n F ₂₁ ′ − (k × A ′ _upper + 1 × A ′ _lower ) / n F ₂₂ ′ − (k × A ′ _upper + 1 × A ′ _lower ) / n F ₂₃ ′ − (k × A ′ _upper + 1 × A ′ _lower ) / n is automatically determined.

As a result, the surface position is set to the barycentric position of the occupied area ratio, placing importance on the portion that occupies a larger area in the pattern area 39.

Thirdly, the two-dimensional CCD sensor 120 is arranged on the stage 3 as shown in FIG. In this case, the stage 3 is moved in the XY plane, and the two-dimensional CCD sensor 120 is located directly below the projection lens 1. Next, the stage 3 is moved to the optical axis A of the projection lens 1.
In the plane orthogonal to the optical axis AX while moving in the X direction (xy
The reticle 1a is proved by the illumination system 1c by tilting with respect to the plane), and the pattern image on the reticle 1a is imaged on the two-dimensional CCD sensor 120 attached to the stage 3.
From the two-dimensional light intensity distribution of the pattern image on the two-dimensional CCD sensor 120, the two-dimensional information of the position distribution of the pattern on the reticle 1a projected and transferred onto the pattern area 39 is obtained.

The two-dimensional information of the pattern image is stored in the memory, and it is determined in which part of the pattern area 39 the pattern image is transferred. Then, it is determined which one of the grid points A ′ _j has the pattern image, and the topography (height of the optical axis AX) of the grid point having the pattern image is either the range S _upper or the range S _lower . , The offset amount (correction amount) is automatically selected (F ₁₉ ′ −A ′ _{upper to} F ₂₃ ′ −A ′ _upper or F ₁₉ ′).
-A are _{'lower ~F 23' -A 'lower} ) is allowed.

When the two-dimensional distribution of the pattern image is located substantially in both the range S _upper and the range S _lower , the offset value (correction amount) is F ₁₉ ′ − (A ′ _upper + A ′). _lower ) / 2 F ₂₀ ′ − (A ′ _upper + A ′ _lower ) / 2 F ₂₁ ′ − (A ′ _upper + A ′ _lower ) / 2 F ₂₂ ′ − (A ′ _upper + A ′ _lower ) / 2 F ₂₃ ′ − (A ' _upper + A' _lower ) / 2 and the average of both offset values (correction amount) are used.

14 and 15 show flowcharts for automatically setting the offset amount (correction amount) in this case.

In the third case, as shown in FIG. 13, a light receiving element 131 with a pinhole 132 may be provided on the stage 3 instead of the two-dimensional CCD sensor 120.

In this case, in the area where the pattern image on the reticle 1a is projected by the projection lens 1, the grating 1
The stage 3 is moved in the XY plane so that each lattice point of 30 coincides with the position of the light receiving element 131 with a pinhole,
The amount of light that has passed through the pinhole 132 at each lattice point position is measured by the light receiving element 131.

At this time, the light receiving element 131 with the pinhole 132 is kept at the height of the image plane of the projection lens 1 in the optical axis AX direction.

The diameter of the pinhole 132 is the pinhole 1
It is assumed that the size is sufficiently larger than the pattern image of the reticle 1a projected on 32 (about φ100 μm = diameter about the same as the scribe line), and the grating 130 has the same spacing and number as the grating 80 for the topography measurement. Or lattice 8
It is preferable to include 0.

In this case, from the light intensity distribution of each lattice point,
It is possible to obtain two-dimensional information of the position distribution of the pattern on the reticle 1a projected and transferred onto the pattern area 39.
Information on the light intensity distribution of each lattice point is stored in the memory, and it is determined to which part of the pattern area 39 the pattern image is transferred. The setting of the offset amount (correction amount) is the same as above.

FIG. 16 shows a flowchart for automatically setting the offset amount (correction amount) in this case.

In the examples shown in FIGS. 13, 14 and 15,
The two-dimensional information of the pattern image may be stored in the memory, and after determining which part of the pattern area 39 the pattern image is transferred to, the grid points for the topography measurement may be set.

FIG. 17 shows a flowchart for automatically setting the offset amount (correction amount) in this case.

Further, in the above-mentioned embodiment, the method of obtaining the offset amount (correction amount) of the topography of the wafer surface with respect to the relatively simple memory chip has been described, but the topography of the wafer surface is more complicated. For such chips, the offset amount (correction amount) may be determined as described below.

FIG. 18A is a schematic diagram showing the topography of the pattern area 390 of a chip such as an ASIC, and FIG. 18B is the chain double-dashed line shown in FIG.
Further, FIG. 18C is a diagram showing a topographic cross section at the position of the alternate long and short dash line shown in FIG.

In the pattern area 390 of FIG. 18A, the areas 910, 911, 912 and 913 are topographically convex portions but have different heights, and the area 920 is provided with scribe lines, bonding pads and the like. It is a topographically recessed area. Again, the inclination of the corrected n data A _'j and five data F' _{1 9}
Far to calculate the to F _'23 is as defined above.

[0127] At this time, FIG. 18 (B), (C) direction shown in topography section 930 and 931, i.e. in the height direction, 'maximum position A of the _j' n pieces of data A _max, the minimum value A ' seeking _{mi n,} '(the median of _j these average a data a) _center' 950 is calculated and set the slice level 940 and 960 at constant intervals around this value.

Also, the slice levels 94 at the constant intervals are
The range between 0, 950 and 960 is S _upper , S _lower
And

FIG. 19A shows a predetermined pattern area 39 on the wafer 2 shown in FIG. 2 and a plurality of measurement points 19-23.
Topography measurement grid 80 and areas 190, 20 for dividing grid points of the topography measurement grid 80
It is a figure which shows the positional relationship of 0,210,220,230.

FIG. 19B shows an area 19 for dividing the grid points.
It is a figure which shows only 0,200,210,220,230, and is divided | segmented into 5 area | regions corresponding to the number of the some measurement points 19-23.

In the case of this embodiment, each of the plurality of measurement points 19 to 19 is measured.
A different offset amount (correction amount) is set for each 23.

That is, n pieces of data A ′ _190j , A ′
_{200j, A '210j, A'} 220j, and A _{'230 j} (data at the boundary of the region is assumed to be included I dub in both areas.).

Of the data A ′ _190j included in the area 190, the average value A ′ _{190upper of} the data included in the range S _upper defined by the slice levels 940 and 950,
The average value of the data included in the range S _lower defined by the slice levels 950 and 960 is A ′ _190lower .

Similarly to this, the areas 200, 210, 22
Data A _'200j, A' contained in 0,230 _210j, A '
_{Also for 220j} and A ′ _230j , average values A ′ _200upper , A ′ _210upper and A ′ of the data included in the range S _{upper
220upper,} A _'230upper and scope S _lo average value of the data contained in _{wer A' 200lower, A '210lower} , A'
_220lower , A ′ _230lower is _calculated (at this time, in general, A ′
_{190upper ≠ A '200upper ≠ A'} 210upp er ≠ A '220upper
≠ A ′ _230upper , A ′ _190lower ≠ A ′ _200lower ≠
A ′ _{21 0lower} ≠ A ′ _220lower ≠ A ′ _230lower . ).

The offset value (correction amount) is reflected, for example, when a pattern having a smaller depth than the pattern transferred to the concave region 920 is transferred onto the convex regions 910, 911, 912 and 913. Multiple measurement points 19,2
The offset value (correction amount) is F ₁₉ ′ -A ′ _190upper F ₂₀ ′ -A ′ _200upper F ₂₁ ′ -A ′ _210upper F ₂₂ ′ -A ′ _220upper F ₂₃ for the measured values of 0, _{21, 22, 23.} Set _as'- A ' _230upper and subtract from the measured value.

[0136] That _{is, F 19 - (F 19 '} -A' 190upper) F 20 - (F 20 '-A' 200upper) F 21 - (F 21 '-A' 210upper) F 22 - (F 22 '-A and controls the surface position of the pattern region 39 with a value of _{- '220upper) F 23 (F} 23' -A '230upper),
Transfer the pattern.

Similarly, when a pattern having a depth of focus smaller than that of a pattern transferred to another area is transferred onto the recessed area 920, each of the plurality of measurement points 19, 20, 2 is measured.
Offset values (correction amounts) are F ₁₉ ′ -A ′ _190lower F ₂₀ ′ -A ′ _200lower F ₂₁ ′ -A ′ _210lower F ₂₂ ′ -A ′ _220lower F ₂₃ ′ − for the measured values 1, _{22, 23.} You can set it as _A'230lower .

The procedure described above is pre-programmed in the focus control device 18 of FIG. 1, and the value of the offset amount (correction amount) is, of course, the focus control device 1.
That is stored in the 8 memory, as the value of the offset amount (correction _{amount), (F 19 '-A'} 190upper) ~ (F 23 '-A' 230upper) or _{(F 19 '-A' 190lower)} ~ ( The use of F ₂₃ ′ -A ′ _230lower ) is also instructed in the program in advance by each step, which is also similar to the above-mentioned example. or,
Also in the case of this example, the offset amount (correction amount) may be automatically selected and determined as in the above-described example.

When the pattern area to be measured has a distortion such as a local warp, the obtained offset amount (correction amount) includes an error caused by the distortion.

In order to reduce such an error and improve the accuracy of the offset amount (correction amount), the above-described measurement and calculation are performed on a plurality of pattern areas on the wafer to obtain a plurality of correction amounts. Alternatively, the average value of these values may be determined as the offset amount (correction amount) to be actually used. Of course, a plurality of different wafers (provided that they have the same pattern structure processed in the same process) are used. If the actual offset amount (correction amount) is obtained from the average value of the offset amount (correction amount), the accuracy of the offset amount (correction amount) will be further increased.

In the above embodiment, the central measurement point 21 of the plurality of measurement points is used to measure the n measurement values A _j (j = 1 to n) of each lattice point on the pattern area. But
Instead of the central measuring point 21, the peripheral measuring points 19, 20,
Any one of 21, 22, 23 may be used.

Further, the wafer is moved so that the central measurement point 21 of the plurality of measurement points coincides with each lattice point on the pattern area of the above embodiment, and all the plurality of measurement points (or The average value A ′ _upper and the average value A ′ _lower may be calculated using 5 × n data (or up to 4 × n data) of some measurement points). In this case, the operation of moving to each grid point on the pattern area is performed once, and the data increases by 5 times (or ~ 4 times), so that the measurement accuracy of the offset amount (correction amount) can be improved without lowering the throughput. There is an advantage to improve.

[0143] The average value A _'upper, average A' in the above embodiment as a measurement value for calculating a _lower, n pieces of measurement A _j of the grid points on the pattern region (j = 1 to n )
Only the average value A ′ _upper and the average value A ′ were used.
_As measurement values for calculating _lower , n measurement values A _j (j = 1 to n) of each lattice point on the pattern area and a plurality of measurement points 19, 20, 21, 22, 22 in the pattern area. Two
Both measured values F ₁₉ , F ₂₀ , F ₂₁ , F ₂₂ , F ₂₃ of 3 may be used.

Further, in the above-mentioned embodiment, the topography of the wafer surface is set at slice levels 94, 95, 96 at regular intervals.
The offset amount (correction amount) is determined by binarizing the range sandwiched between S _upper and S _lower , but the number of slice levels is further increased, for example, the range for _obtaining the offset amount (correction amount) is S _upper , Subdivided into S _middle and S _lower ,
The offset amount (correction amount) for measuring the surface position may be determined from the data included in each range.

Further, in the above embodiment, only the example in which the surface position of each lattice point is measured by temporarily stopping the wafer stage with respect to the surface position measuring device has been shown, but the wafer stage is continuously operated without being stopped. The measurement of the surface position of each lattice point may be performed by repeating the measurement at a certain sampling interval while sending the data. At this time, the light source 5 and the position detecting element 17 are controlled such that the light source is periodically issued and surface position data is synchronously fetched.

The grid points for measurement in the above embodiment are
The grid is not limited to rectangular grids at regular intervals, and may be a set of measurement points having different coordinates distributed in a two-dimensional plane.

Further, in the above-described embodiment, among the measured values of the respective lattice points on the pattern area, those showing a value (abnormal value due to dust etc.) far apart from the topography of the wafer surface with respect to the other measured values. If it occurs, it is advantageous not to use this measured value (abnormal value due to dust etc.) for calculating the offset amount (correction amount). Therefore, in such a case, the offset amount (correction amount) is calculated from the remaining measurement value excluding this measurement value (abnormal value due to dust or the like).

FIG. 22 is a schematic view of the essential portions of Embodiment 1 of the present invention.
FIG. 23 is an enlarged explanatory diagram of a part of FIG. 22,
23, the same elements as those shown in FIGS. 1 and 2 are designated by the same reference numerals. Next, the configuration of the present embodiment will be sequentially described.

In FIG. 22, 1 is a reduction type projection optical system (projection lens system), and Ax is the optical axis of the projection optical system 1.
A reticle 1a has a circuit pattern formed on its surface and is mounted on the reticle stage 1b. An illumination system 1c uniformly illuminates the surface of the reticle 1a. The projection optical system 1 reduces and projects the circuit pattern on the surface of the reticle 1a onto the surface of the wafer 2. The wafer 2 is adsorbed and fixed on the surface of the wafer stage 3. The wafer stage 3 has an optical axis Ax direction (z direction) and an optical axis A of the projection optical system 1.
A plane that is movable in two directions (x and y directions) in a plane (x-y plane) orthogonal to x and that is orthogonal to the optical axis Ax (x-
The tilt can be adjusted with respect to the (y plane). Thus, the surface position of the wafer 2 placed on the surface of the wafer stage 3 can be adjusted arbitrarily. A stage control device 4 drives and controls the wafer stage 3 based on a signal from a focus control device 18, which will be described later.

SA is light irradiation means, SB is projection means, SC
Is photoelectric conversion means, and these constitute a part of a surface position detecting device for detecting surface position information of the surface of the wafer 2.
The projection means SB and the photoelectric conversion means SC are combined with the detection means SB.
It constitutes C.

In the present embodiment, the circuit pattern on the surface of the reticle 1a is projected by the projection optical system 1 using the surface position detecting device to the wafer 2
When projecting onto the surface, the wafer stage 3 is drive-controlled so that the exposure area on the surface of the wafer 2 is located within the allowable depth of focus of the projection optical system 1. Then, the wafer stage 3 is moved to X
The rectangular pattern regions (shots) 39 are sequentially formed on the surface of the wafer 2 by sequentially moving them on the -Y plane.

Next, each element of the surface position detecting device of this embodiment will be described. First, the light irradiation means SA for making a plurality of light beams incident on the surface of the wafer 2 will be described.

Reference numeral 5 denotes a light source, which is composed of a white lamp or an illumination unit configured to emit light of a plurality of different wavelengths. Reference numeral 6 denotes a collimator lens, which emits the light flux from the light source 5 as a parallel light flux whose cross-sectional intensity distribution is substantially uniform.

Reference numeral 7 is a prism-shaped slit member,
A pair of prisms are attached to each other such that their slopes face each other, and a plurality of openings (five pinholes) 71 to 75 are formed on the attachment surface. Reference numeral 8 denotes a lens system, which is composed of both telecentric systems, and has five independent light fluxes 71a to 75a which have passed through the plurality of pinholes 71 to 75 of the slit member 7 and five measuring points 19 on the surface of the wafer 2 via the mirror 9. The light is guided at an incident angle approximately equal to -23.
At this time, the projected images are pinhole images having substantially the same size. In addition, this lens system 8 is internally provided with each luminous flux 7
It has an aperture stop 40 for aligning NAs of 1a to 75a. In the present embodiment, each of the above elements 5, 6, 7, 8,
The light irradiation means SA is constituted by 9.

In the present embodiment, the incident angle φ of each light beam from the light irradiation means SA on the surface of the wafer 2 (the angle formed by the perpendicular to the wafer surface) is φ = 70 ° or more. As shown in FIG. 23, a plurality of pattern areas (exposure area shots) 39 are arranged on the wafer 2 surface. The five light beams 71a to 75a that have passed through the lens system 8 are incident on the measurement points 19 to 23, which are independent of each other, of the pattern region 39.

The five light beams 71a to 75a incident on the surface of the wafer 2 are perpendicular to the wafer 2 (optical axis Ax direction).
As shown in FIG. 23 when observed from above, the direction rotated by θ ° (θ = 22.5 °) in the XY plane from the X direction (shot arrangement direction) on the wafer 2 surface so as to be observed independently of each other. More incident. As a result, the same effect as that of the first embodiment is obtained.

It should be noted that the five pinholes 7 of the slit member 7
1 to 75 are provided on the same plane conjugate with the wafer 2 so as to satisfy the Scheimpflug condition with the surface of the wafer 2.
The size and shape of the pinholes 71 to 75 of the slit member 7 and the distance from the lens system 8 are set so that pinhole images of substantially the same size are formed on the surface of the wafer 2.

In this embodiment, each of the above elements 5, 6, 7,
A plurality of light fluxes (pinholes) are incident on the surface of the wafer 2 by the light irradiation means SA composed of 8 and 9. In the present embodiment, the number of measurement points on the surface of the wafer 2 is not limited to five, and any number may be used.

Next, a plurality of reflected light beams from the surface of the wafer 2 are converted into C
The projection means SB that guides light onto the detection surface 17 of the photoelectric conversion means SC as a position detection element made of a CD to form an image will be described.

Reference numeral 11 denotes a light receiving lens, which is composed of a bi-telecentric system and reflects five reflected light beams from the surface of the wafer 2 via the mirror 10. And the light receiving lens 11
Forms a pinhole image at each position 24-28 with respect to each measurement point 19-23. A stopper 41 is provided on the light receiving lens 11, and has the same effect as that of the first embodiment. The light fluxes from the pinhole images at the positions 24 to 28 are incident on the five correction optical systems 12 to 16 provided independently.

Since the light receiving lenses 11 of the correction optical systems 12 to 16 are both telecentric systems, their optical axes are parallel to each other, and the pinhole images formed at the respective positions 24 to 28 are detected by the photoelectric conversion means SC. The images are re-imaged on the surface 17 so that the spot lights have the same size. The photoelectric conversion means SC is composed of a single two-dimensional CCD. In this embodiment, the above-mentioned elements 10, 11, 12 to 16 constitute a projection means SB.

The correction optical systems 12 to 16 each have a plane-parallel plate having a predetermined thickness and a lens system.
It is coaxial or eccentric with respect to the optical axis of 1. At this time, the plane parallel plate is used to correct the optical path length of each lens system. In addition, the lens system includes a detection surface 17 of each measurement point 19 to 23.
It is provided for correction so that the imaging magnification (projection magnification) above becomes substantially equal.

That is, in the oblique incidence imaging optical system in which a plurality of light beams are obliquely incident on the wafer surface as in the present embodiment, a plurality of measurement points 19 to 23 having different distances from the light receiving lens 11 are provided by the photoelectric conversion means SC. When forming an image on the detection surface 17, the image forming magnifications differ from each other.

Therefore, in this embodiment, correction optical systems 12 to 16 are provided for the respective measurement points, and the respective measurement points 19 to 2 are provided.
The projection magnifications of No. 3 and No. 3 on the detection surface 17 are made substantially equal (this correction optical system is described in detail in Japanese Patent Application No. 2-44236 of the present applicant).

At this time, each measurement point 19 on the wafer 2 surface is measured.
The position of the pinhole image (spot light) incident on the detection surface 17 is changed depending on the surface positions (height direction, optical axis Ax direction) of 23. The photoelectric conversion means SC detects the position change of the pinhole image at this time. As a result, in this embodiment, the surface position information of the measurement points 19 to 23 on the wafer 2 surface can be detected with the same accuracy.

Further, the measurement points 19 to 23 on the wafer 2 surface and the detection surface 17 of the photoelectric conversion means SC are conjugated with each other via the projection means SB (for each measurement point 19 to 23). I am performing fall correction). As a result, the position of the pinhole image on the detection surface 17 does not change due to the local inclination of each of the measurement points 19 to 23, and the optical axis A on the surface of the wafer 2 does not change.
The position of the pinhole image on the detection surface 17 is changed in response to the local change of the height position of each measurement point in the x direction, that is, the height of the measurement points 19 to 23.

The photoelectric conversion means SC detects the incident position information of the pinhole image incident on the detection surface 17 surface. The incident position information of the pinhole image at each measurement point 19 to 23 obtained by the photoelectric conversion unit SC is input to the focus control unit 18.

The focus control means 18 is a photoelectric conversion means S.
Height information (surface position information) of each measurement point 19 to 23 from C
Then, the position information of the surface of the wafer 2, that is, the position in the optical axis Ax direction (z direction), the inclination with respect to the XY plane, and the like are obtained. Then, a signal relating to the drive amount of the wafer stage 3 is input to the stage control device 4 so that the surface of the wafer 2 substantially coincides with the projection surface of the reticle 1a by the projection optical system 1.

The stage control device 4 drives and controls the wafer stage 3 according to an input signal from the focus control means 18 to adjust the position and orientation of the wafer 2.

The displacement of the wafer stage 3 in the xy directions is measured by a known method using a laser interferometer (not shown), and a signal indicating the amount of displacement of the wafer stage 3 is transmitted from the laser interferometer via a signal line. Is input to the stage control device 4.

The stage controller 4 controls the position of the wafer stage 3 in the xy directions, and moves the wafer stage 3 in the z direction based on a signal input from the focus controller 18 via a signal line. Control and tilt control are performed. This also applies to the first embodiment.

Next, a method of detecting the surface position of the pattern area 39 on the wafer 2 in this embodiment will be described.

As described above, the main cause of the detection error that occurs when the surface position of the wafer 2 is detected by the optical surface position detection device of FIG. 22 is the light reflected by the resist surface of the wafer 2 and the substrate surface of the wafer 2. This is interference with the reflected light. Since the influence of this interference varies depending on the pattern formed on the wafer substrate surface, the measurement error due to the interference has a different value for each of the plurality of measurement points 19 to 23.

In the reduction projection exposure apparatus as shown in FIG. 22, the pattern on the reticle 1a is sequentially transferred to each exposure area on the wafer 2 by the step & repeat method.
At this time, before performing surface position detection and pattern transfer, the IC pattern and the reticle pattern already formed in the exposure area of the wafer 2 are aligned.

The optical surface position detecting device is the projection lens system 1.
The reticle 1a is also fixed to the projection lens system 1 at a fixed position. Therefore, if the surface position is detected after the alignment between the reticle pattern and the exposure area of the wafer 2, the measurement points 19 to 23 are
The height positions of substantially the same position in each exposure area arranged on the wafer 2 are detected.

This corresponds to the fact that the measurement points 19 to 23 detect the height position of the portion having the same substrate (pattern) structure in each exposure area.

Therefore, the influence on the detection result due to the interference between the light reflected on the resist surface of the wafer 2 and the light reflected on the substrate surface of the wafer 2 may be a value unique to each measurement point in the exposure area. As expected, the present inventor confirmed by experiments that a substantially constant detection error occurs in each measurement.

By applying this phenomenon to surface position detection, the detection error at each measurement point is measured in advance, and the detection error at each measurement point is calculated from the surface position data relating to each measurement point in the exposure area. How to correct and obtain accurate surface position information,
The applicant has proposed in Japanese Patent Laid-Open No. 102518/1990.

In the publication, the positional relationship between the exposure area 39 and the measuring points 19 to 23 of the surface position detecting device is rectangular as compared with the rectangle connecting the measuring points 19, 20, 22, and 23 as shown in FIG. When the exposure area 39 is smaller, a part of the plurality of measurement points may be located in the unpatterned wafer area in the peripheral portion of the wafer.

In this case, in the exposure area of the wafer peripheral portion including the measurement points located in the wafer area having no pattern, the above detection error at each measurement point is corrected from the surface position data relating to each measurement point. If so, accurate surface position information may not be obtained.

Therefore, in the exposure area around the wafer,
It is necessary to measure the surface position of the wafer by using the remaining plurality of measurement points excluding the measurement points located in the wafer region having no pattern. As a result, the number of measurement points may decrease in the peripheral portion of the wafer, and the correction accuracy of the surface position may deteriorate.

In this embodiment, the deterioration of the correction accuracy of the surface position in the exposure area of the peripheral portion of the wafer at this time is improved by the method described below.

FIG. 25 shows a layout of the exposure area 39 which is regularly formed on the wafer 2 along the x-axis and the y-axis.

At this time, the positional relationship between the exposure area 39 and the measuring points 19 to 23 of the surface position detecting device is a rectangular exposure with respect to a rectangle connecting the measuring points 19, 20, 22, and 23 as shown in FIG. It is assumed that the area 39 is smaller. Then, whether or not each of the measurement points 19 to 23 is on the pattern,
As shown in FIG. 25, the exposure area is divided into nine areas A to I. Exposure areas 39 (plurality) in each of areas A to I
The positional relationship between the measurement points 19 to 23 is shown in a to i of FIG. In FIG. 26, black circles indicate cases where there are measurement points on the pattern, and white circles indicate cases where there are no measurement points on the pattern.

That is, considering the areas above and below the pattern for each of the measurement points 19 to 23, the following table is obtained.

[0186]

[Table 1]

Here, for each of the measurement points 19 to 23,
The detection error (offset correction amount) in the area above the pattern and the area not above the pattern is obtained.

First, how to obtain the detection error in the area where the measurement points 19 to 23 are on the pattern will be described.

As shown in FIG. 24, the measurement points 19 to 23 are set for the exposure area 39, the measurement point 21 is located at substantially the center of the exposure area 39, and the optical axis AX is used for measuring the surface position.
The mounting position of the surface position detecting device is adjusted in advance so as to intersect with.

The remaining measurement points 19, 20, 22, 23 are
It is on the periphery (outside) of the exposure area 39, and the measurement point 19
The origins of the height measurements of ˜23 are adjusted so as to be on the same plane, and this plane is made to substantially coincide with the best image plane of the reduction projection lens system 1.

Here, assuming that the measurement point 21 is at the point (x, y) on the xy coordinates, the measurement points 19, 20, 22,
On the 23 xy coordinates, (x + δx, y + δy), (x +
δx, y−δy), (x−δx, y + δy), (x−δx,
y−δy). At this time, the origin of the xy coordinate system is the intersection of the xy plane and the optical axis AX.

Next, the exposure area 39 for the offset measurement specific to each measurement point caused by the wafer structure.
Are determined in advance from the area A in which all the measurement points 19 to 23 are on the pattern.

First, the wafer stage 3 is moved so that the measurement point 21 is located in the pattern-free area on the wafer 2 outside the exposure area 39, and the height position measurement value of the measurement point 21 (optical axis A
The wafer 2 is fixed at a height position where it becomes substantially zero (X direction) (the position in the optical axis AX direction is a predetermined exposure region 39).
Shall be kept constant during the measurement. ).

This operation is necessary in order to set the origin of the height position measurement value (direction of the optical axis AX) of the measurement point 21 in the area which is not affected by the pattern.

Then, by moving the wafer stage 3 stepwise, one of a plurality of predetermined exposure regions 39 on the wafer 2 is sequentially sent directly under the projection lens system 1 to perform alignment with the reticle pattern. . At this time, the movement control of the wafer stage 3 is performed using the output signal from the laser interferometer.

Then, the optical axis AX direction at the measurement points 19 to 23 of the exposure area 39 on the wafer 2, that is, the height positions z ^pattern ₁₉ to z ^pattern ₂₃ are detected by the surface position detecting device. Signal corresponding to the height position z ^pattern ₁₉ ~z ^pattern ₂₃ is input from the position detection element 17 to the focus controller 18.

This measurement is sequentially performed on all of a plurality of predetermined exposure areas 39.

[0198] Here, the surface position at the measuring points 19 to 23 of each exposure area 39 on the wafer ² z ^pa ttern ₁₉ ~z ^pattern
₂₃ is z ^pattern ₁₉ = f ₁₉ (x + δx, y + δy) + c ^pattern ₁₉ z ^pattern ₂₀ = f ₂₀ (x + δx, y−δy) + c ^pattern ₂₀ z ^pattern ₂₁ = f ₂₁ (x, y) + c ^pattern ₂₁ z ^pattern ₂₂ = F ₂₂ (x−δx, y + δy) + c ^pattern ₂₂ z ^pattern ₂₃ = f ₂₃ (x−δx, y−δy) + c ^pattern ₂₃ .

The method of taking the x and y coordinates of this function is shown in FIG.
As shown in 4,25. Since the actual surface position detection is performed for each specific exposure area to be detected, z
The values of ^{patter n} _{19 to} z ^pattern ₂₃ (surface position data) are x,
It is a discrete value for y. Further, δx and δy are shown in FIG.
It is the distance between the measurement points described using.

[0200] In this way, than the value of ^z patter ⁿ ₁₉ ~z ^pattern ₂₃ obtained for each measuring point 19 to 23 of the plurality of exposure regions 39, each set (measurement point z ^pattern ₁₉ ~z ^pattern ₂₃ The surface shape of the wafer 2 can be estimated for each set. The above f _{19 to} f ₂₃ represent, for each of the measurement points 19 to 23, only functions x and y that do not include a constant term of the surface shape function obtained by polynomial approximation, and c ^pattern _{19 to} c ^pattern ₂₃
Indicates the constant term of this surface shape function.

The measured values at the respective measurement points 19 to 23 are the wafer 2
Even if the measurement points 19 to 23 are affected by the interference between the light reflected on the resist surface and the light reflected on the substrate surface of the wafer 2, the position of the wafer surface having the substrate surface with the same surface shape is detected. What you are doing is no different.

Z ^pattern _{19 to} z at each measurement point in each exposure region
The surface shape of the wafer 2 inferred from the value of the ^pattern ₂₃ should be exactly the same from the viewpoint of measuring the physically same surface, that is, the same wafer surface. However, since the surface position detection of each measurement point is affected by the interference in the substrate structure peculiar to each measurement point for each measurement of each exposure region as described above, there is a constant amount of constant shift.

Therefore, if a true function indicating the surface shape of the wafer 2 is f (x, y), then z ^{patt ern} _{19 to} z ^pattern ₂₃
Can be rewritten as:

Z ^pattern ₁₉ = f (x + δx, y + δy) + c ^pattern ₁₉ z ^pattern ₂₀ = f (x + δx, y−δy) + c ^pattern ₂₀ z ^pattern ₂₁ = f (x, y) + c ^pattern ₂₁ z ^pattern ₂₂ = f ( x−δx, y + δy) + c ^pattern ₂₂ z ^pattern ₂₃ = f (x−δx, y−δy) + c ^pattern ₂₃ where the order and expansion formula of the curved surface of the surface shape function f (x, y) are predetermined polynomials. since the predetermined form of the measured values z ^pattern ₁₉ ~z ^pattern ₂₃ a surface position de - used as data, minimum 2 surface shape at each measurement point by multiplicative function f (x,
The coefficient of y) and the constant terms c ^pattern _{19 to} c ^pattern ₂₃ are calculated.

According to this method, for example, ∬ [{f ₂₁ (x, y) + c ^pattern ₂₁ } -z ^pattern _{21 with} respect to the measurement point 21.
(X, y)] ² dxdy = 0 is executed so as to solve the least squares method, and the surface shape function f
The coefficient of ₂₁ (x, y) and the constant term c ^pattern ₂₁ are determined.

Next, the surface shape function is f (x, y) =
As f21 (x, y), other measurement points 19, 20, 2
2 and 23: ∬ [{f ₂₁ (x + δx, y + δy) + c ^pattern ₁₉ } -z ^pattern ₁₉ (x + δx, y + δy)] ² dxdy = 0 ∬ [{f ₂₁ (x + δx, y-δy) + c ^pattern ₂₀ }- z ^pattern ₂₀ (x + δx, y−δy)] ² dxdy = 0 ∬ [{f ₂₁ (x−δx, y + δy) + c ^pattern ₂₂ } −z ^pattern ₂₂ (x−δx, y + δy)] ² dxdy = 0 ∬ [{ f ₂₁ (x−δx, y−δy) + c ^pattern ₂₃ } −z ^pattern ₂₃ (x−δx, y−δy)] ² dxdy = 0 is executed to solve the least squares method.

However, for the measurement points 19, 20, 22, 23, the coefficient of the surface shape function f ₂₁ (x, y) is the measurement point 21.
Determined value against, i.e. a fixed value shall be determined only constant term ^{_{c pa ttern 19, c pattern 23}} , c pattern 23, c pattern 23 with the least squares method.

The constant terms c ^pattern ₁₉ to c obtained here
^{The pattern} ₂₃ is used to determine the offset correction amount to be reflected when measuring the surface position, as described later.

Here, the accuracy of calculation of the coefficient of the surface shape function f (x, y) improves as the measured value (surface position data) increases, so that the exposure to be detected is adjusted in accordance with the required correction accuracy. The number of areas may be determined.

Incidentally, the method of obtaining the detection error from the constant term of the surface shape function f (x, y) is described in Japanese Patent Application Laid-open No.
This is proposed in Japanese Patent No. 102518. Note that this method will be hereinafter referred to as the “surface shape function constant method”.

Next, a method for obtaining the detection error in the area where the measurement points 19, 20, 22, 23 are not on the pattern will be described.

As described above, in the surface position detecting apparatus of this embodiment, the pinhole images on the measurement points 19 to 23 are formed almost equally, and the correction optical system is provided for each measurement point. Thus, the magnification, resolution, and precision for detecting the height position of each of the plurality of measurement points are made substantially equal to each other. Further, the aperture stop 40 provided in the lens system 8 causes the NA
Are made substantially the same, and the exit side is made telecentric by the lens system 8 and the measurement points 19 to 19 of the respective luminous fluxes 71a to 75a are
The light beams are made incident on 23 at substantially the same angle.

That is, the surface position detecting device of this embodiment is
The optical characteristics of the plurality of measurement points 19 to 23 are all the same.

Therefore, the measurement points 19, 20, 22, 23
Since the detection error of the area not on the pattern shows the same value if the substrate structure under the measurement point is the same, the result is the same regardless of which measurement point is used. It shows a thing.

By using this fact, the detection error in the area not on the pattern is obtained.

First, each exposure area 3 for measuring the detection error
9, B, C, D, E where the measurement point 19 is not on the pattern
A plurality of areas should be determined in advance from each area. The above-mentioned "surface shape function constant method" is performed on the predetermined exposure area 39. At this time, all the measurement points 19 to 23 are used for the measurement.

Wafer 2 at measurement points 19, 20, 22, 23
The measured value in the optical axis AX direction of the upper exposure region 39 is z ^outside ,
The surface shape function is f (X, Y), and the wafer 2 at the measurement point 21
Let z ′ ^pattern _{21 be} the measurement value in the optical axis AX direction of the upper exposure region 39, and f (x, y) be the surface shape function.

Then, the surface positions z ^outside and ^z'pattern ₂₁
Becomes z ^outside = f (X, Y) + c ^{outside z'pattern} ₂₁ = f (x, y) + c ' ^pattern ₂₁ .

At this time, z ^outside , f (X, Y) has the following values depending on the area. That is, the values at the measurement points 19 and 22 in the B area are as follows: z ^outside (X, Y) = z ^outside ₁₉ (x + δx, y + δy) f (X, Y) = f (x + δx, y + δy) and z ^outside (X, Y) = z ^outside ₂₂ (x−δx, y + δy) f (X, Y) = f (x−δx, y + δy) In the C area, the values of the measurement points 19 and 20 are obtained, and z ^outside (X, Y) = z ^outside ₁₉ (x + δx, y + δy) f (X, Y) = f (x + δx, y + δy) and z ^outside (X, Y) = z ^outside ₂₀ (x + δx, y−δy) f (X, Y) = f (x + δx, y−δy) The values at the measurement points 20 and 23 in the D area are as follows: z ^outside (X, Y) = z ^outside ₂₀ (x + δx, y−δy) f (X, Y) = f (x + δx, y−δy) and z ^outside (X, Y) = z ^outside ₂₃ (x−δx, y−δy) f (X, Y) = f (x−δx, y− δy) The values at the measurement points 22 and 23 in the E area are as follows: z ^outside (X, Y) = z ^outside ₂₂ (x−δx, y + δy) f (X, Y) = f (x−δx, y + δy) and z ^outside (X, Y) = z ^outside ₂₃ (x−δx, y−δy) f (X, Y) = f (x−δx, y−δy).

The coefficient and constant term c ^outside _{19 of} this surface shape function f (X, Y) and the coefficient and constant term c of f (x, y)
^{The pattern} ₂₁ is calculated by the least squares method using the measured value z ^pattern and z ′ ^pattern ₂₁ as the surface position data.

In this method, as in the above, for the measurement point 21, ∬ [{f ₂₁ (x, y) + c ′ ^pattern ₂₁ } −z ′ ^pattern
₂₁ (x, y)] ² dxdy = 0 is performed to solve the least squares method, and the surface shape function f
The coefficient of ₂₁ (x, y) and the constant term ^c'pattern ₂₁ are determined.

Next, the surface shape function is f (X, Y) =
As f ₂₁ (X, Y), ∬ [{f ₂₁ (X, Y) + c ^outside } -z ^outside (X,
Y)] ² dXdY = 0 is executed so as to solve the least squares method.

However, the coefficient of the shape function f ₂₁ (x, y) is a value determined for the measurement point 21, that is, a fixed value, and only the constant term c ^outside is determined by the method of least squares.

In this way, the measurement points 19, 20, 22,
When the detection error in the peripheral area 23 is not on the pattern is calculated, the number of shots that can be selected for detection error measurement in the layout of the exposure area 39 shown in FIG. The number of shots that can be selected from the area A in 12 is larger than 12, and it is possible to obtain the detection error in the peripheral area with the same or higher accuracy as in the area A.

The constant terms c ^outside and c'obtained here.
^{The pattern} ₂₁ is used to determine the offset correction amount to be reflected when measuring the surface position, as described later.

As described above, the detection errors in the area where the measurement points 19 to 23 are on the pattern and the area where the measurement points 19, 20, 22, and 23 are not on the pattern were obtained. next,
A method of calculating the offset reflected when measuring the surface position will be described.

Obtained constant term c ^pattern _{19 to} c
^{The pattern} ₂₃ , c ^outside , and c ′ ^pattern ₂₁ may be used as the offset as they are.

That is, when the respective offsets when the measurement points 19 to 23 are on the pattern are PT ₁₉ to PT ₂₃ , PT ₁₉ = c ^pattern ₁₉ PT ₂₀ = c ^pattern ₂₀ PT ₂₁ = c ^pattern ₂₁ PT ₂₂ = c ^pattern ₂₂ PT ₂₃ = c ^pattern ₂₃ .

When the measurement points 19, 20, 22, and 23 are not on the pattern, the offset of each measurement point is the common OS, and OS = c ^outside .

(Here, since c ^pattern ₂₁ = c ' ^pattern ₂₁ , there is a relation of c ^pattern ₂₁ was used as the offset PT ₂₁ of the measurement point 21.) Further, the offset of the measurement point 21 is set on the wafer by It is exposed and determined by an experiment, or the applicant of the present invention discloses in JP-A-2
It may be a value automatically measured by another method proposed in Japanese Patent Laid-Open No. 198130. It is assumed that this value is CT and is previously stored in the memory.

That is, PT ₂₁ = CT.

At this time, the respective offsets when the measurement points 19, 20, 22, 23 are on the pattern are: PT ₁₉ = c ^pattern ₁₉ -c ^pattern ₂₁ + CT PT ₂₀ = c ^pattern ₂₀ -c ^pattern ₂₁ + CT PT ₂₂ = c ^pattern _22- c ^pattern ₂₁ + CT PT ₂₃ = c ^pattern _23- c ^pattern ₂₁ + CT.

When the measurement points 19, 20, 22, and 23 are not on the pattern, the offset of each measurement point is OS = c ^outside- c ' ^pattern ₂₁ + CT.

In this way, the offset of the measurement point 21 is obtained by experiments and the other offsets PT _{19 to} PT ₂₃ are obtained as the difference of the constant term c ^pattern ₂₁ of the measurement point 21, or O
By obtaining S as the difference of the constant term c ′ ^pattern ₂₁ of the measurement point 21, the offsets PT _{19 to} P of the measurement points are obtained.
The reliability of T ₂₃ and OS can be improved.

Offsets PT _{19 to} P found here
T ₂₃ and OS are stored in memory.

Now that the offset to be reflected at each measurement point has been set, the method of reflecting the offset at the time of exposure will be described next.

After the offset setting is completed, the first
The wafer stage 3 is moved so that the exposure area is directly below the projection lens system 1, and the first exposure area is aligned with the reticle pattern. After the alignment is completed, the surface position detection device detects the surface positions of the five measurement points 19 to 23 in the first exposure area, and the focus control device 18 detects the surface positions of the five measurement points 19 to 23 based on the output signal from the photoelectric conversion means SC. Form surface position data.

[0238] The focus control unit 18, a memory - and designed to read the offset OFS ₁₉ ~OFS ₂₃ of each measuring point 19-23 from. At this time, depending on which area (A to I) in FIG. 25 the first exposure area belongs to, the offsets OFS _{19 to} OFS _{23 to be} read take values according to the following table.

[0239]

[Table 2]

Read offsets OFS _{19 to} OFS
_23, the surface position data of the first exposure area - calculating the value Z ₁₉ to Z ₂₃ with the corrected data z ₁₉ to z _23.

That is, Z ₁₉ = z ₁₉ -OFS ₁₉ Z ₂₀ = z ₂₀ -OFS ₂₀ Z ₂₁ = z ₂₁ -OFS ₂₁ Z ₂₂ = z ₂₂ -OFS ₂₂ Z ₂₃ = z ₂₃ -OFS ₂₃ . The focus control device 18 obtains the least-squares plane of the first exposure area based on the new surface position data Z _{19 to} Z ₂₃ .

Further, the focus control device 18 inputs a command signal according to the calculated result of the least squares plane to the stage control device 4, and the position and the inclination of the wafer 2 on the wafer stage 3 in the optical axis AX direction are determined. It is adjusted (corrected). This positions the first exposure area on the wafer 2 at the best image plane of the projection lens system 1. After the adjustment of the surface position, the first exposure area is exposed to transfer the reticle pattern.

When the exposure of the first exposure area is completed,
The wafer stage 3 is driven so that the second exposure area on the wafer 2 is directly below the projection lens system 1, and the same surface position detection, surface position adjustment, and exposure operations as described above are executed. After performing this series of operations until the exposure of the final exposure area is completed,
The wafer 2 is unloaded from the wafer stage 3.

The above-described determination of the detection error (offset correction amount) at each measurement point on the wafer surface needs to be performed for each process in which the formed pattern is different.

However, it suffices to perform the frequency once for each step. If the detection error (offset correction amount) is determined at the beginning of each step and the value is stored in the memory in the control device, The production can be performed with almost no decrease in the throughput of semiconductor chip production.

Since the offset correction amount caused by the detection is a value unique to each measurement point, the number of exposure regions (the number of shots) used to determine the surface shape function (including the constant term).
Is appropriately determined from the focus accuracy required for the device.

That is, a small number is required for a process in which the focus accuracy is loose, and a large number is required for a strict process. However, even if the total number of measurement shots in the area A and the surrounding area is 24, the time required for step movement between each shot is 0.4 seconds, and the measurement time is 0.2 seconds, the offset caused by the detection The time required to obtain the correction amount is only about 15 seconds. As described above, the detection offset correction amount is determined only for the first wafer of the lots of lots, and the value obtained for the first wafer is used for the subsequent wafers. The decline is almost negligible.

[0248] Also, after the measurement of the A zone and B~E areas simultaneously, collectively detection error ^{c pa} ttern ₁₉ ~c ^pattern
₂₃ and c ^outside may be calculated.

The measuring procedure in this case is shown in FIG. 27, FIG.
This is briefly shown in the flowchart of FIG.

In the above embodiment, the measurement point 2 in the area A is 2
For 1 ∬ [{f_{twenty one}(X, y) + c^pattern _{twenty one}} -Z
^pattern _{twenty one}(X, y)]²dxdy = 0 Then, the surface shape function f21
Coefficient of (x, y) and constant term cpattern21
And the constant term c at another measurement point^pattern ₁₉，₂₀， _{twenty two}，
_{twenty three}To obtain the surface shape function f (x, y) = f_{twenty one}(X,
y).

Here, the least squares method may be solved for the other measurement points in the area A, and the constant term of the remaining measurement points may be determined using the surface shape function obtained for this measurement point. .

Furthermore, the least squares method is solved for each of the measurement points 19 to 23 in the area A, and the surface shape function f ₁₉ (x, y)
Up to f ₂₃ (x, y), f ₁₉ (x, y) to f ₂₃ (x,
The function obtained by averaging the coefficients of each order in
Let _average (x, y).

Then, the surface shape function f (x, y) = f
_{As the average} (x, y), the least squares method is solved again for all the measurement points 19 to 23, and the constant terms c ^pattern _{19 to} c
^{When pattern} ₂₃ is determined, the precision of calculation of the surface shape function f (x, y) is improved due to the large number of samples.
The calculation accuracy of ^patterns _{19 to} c ^pattern ₂₃ is also improved.

FIG. 30 shows a wafer 2 according to the second embodiment of the present invention.
It is explanatory drawing of an upper pattern area. In the present embodiment, the positional relationship between the exposure area 39 and the measurement points 19 to 23 of the surface position detection apparatus is such that the rectangle connecting the measurement points 19, 20, 22, 23 and the rectangle of the exposure area 39 are almost as shown in FIG. This is an example of the case of equality.

The exposure area is divided into 17 areas A to Q as shown in FIG. 31, depending on whether each of the measurement points 19 to 23 is on the pattern or on the boundary.

When each of the measurement points is on the boundary of the pattern, there are 12 possible positional relationships as shown in case-1 to case-12 of FIG. In FIG. 32, circles represent measurement points,
The shaded area shows a part of the measurement points on the pattern. The fact that there are 12 positional relationships between the measurement points and the boundaries of the patterns means that there are 12 types of detection errors (offset correction amounts) in the areas where the measurement points are in the boundary regions.

Here, considering the area above the pattern and the area at the boundary area for each of the measurement points 19 to 23, the following table is obtained.

[0258]

[Table 3]

Furthermore, in the area in the boundary area, measurement point 1
As shown in the table below, 9, 20, 22, and 23 have different positional relationships between the measurement points and the patterns.

[0260]

[Table 4]

Then, it is necessary to obtain a total of 17 types of detection errors, 5 types of detection errors in the region on the pattern and 12 types of detection error in the region in the boundary area with the pattern.

A method for simultaneously obtaining the detection error in the area where the measurement point is on the pattern and the detection error in the area where the measurement point is in the boundary area with the pattern will be described below.

First, the exposure area 3 for measuring the detection error
It is assumed that a plurality of 9 is determined in advance from at least one shot B to Q areas (in this case, 16 shots or more. The area A may be included).

First, the wafer stage 3 is moved so that the measurement point 21 is located in the pattern-free area on the wafer 2 outside the exposure area 39, and the height position measurement value of the measurement point 21 (optical axis A
The wafer 2 is fixed at a height position where it becomes substantially zero (in the X direction) (the position in the optical axis AX direction is to be kept constant during the measurement of the exposure area 39 in the remaining B to Q areas thereafter). .).

This operation is necessary for setting the origin of the height position measurement value (direction of the optical axis AX) of the measurement point 21 in the area where the pattern does not affect.

Then, by moving the wafer stage 3 in steps, a predetermined exposure area 39 in the B area is obtained.
Are sent directly under the projection lens system 1 to be aligned with the reticle pattern. At this time, the movement control of the wafer stage 3 is performed using the output signal from the laser interferometer.

Then, the measurement point 1 of the exposure area 39 in the B area
The optical axis AX direction in 9 to ₂₃ , that is, the height positions z ₁₉ , z ₂₀ , z ₂₁ , z ₂₂ , and z ₂₃ are detected by the surface position detection device. A signal corresponding to each height position is input from the photoelectric conversion means SC to the focus control device 18. This measurement is sequentially performed on all the predetermined exposure areas 39 in the B to Q areas.

Next, calculation is performed using the measurement points 21 existing on the pattern in the exposure areas 39 in all the B to Q areas.

That is, the surface position z21 of the measuring point 21 in each of the exposure areas 39 in the B to Q areas is represented by a surface shape function of z ^pattern ₂₁ = f ₂₁ (x, y) + c ^pattern ₂₁ as described above. And

The above f ₂₁ (x, y) represents a function of only x and y that does not include a constant term of the surface shape function obtained by polynomial approximation or the like for each measurement point 21, and c ^pattern ₂₁ is the surface shape. It shows the constant term of the function.

Here, since the order of the curved surface of the surface shape function f ₂₁ (x, y) and the expansion formula are predetermined in the form of a predetermined polynomial, the measured value z _{21 in the B} to Q area is set to the surface position. The surface shape function f ₂₁ (x,
The coefficient of y) and the constant term c ^{patter n} ₂₁ are calculated.

This method is as follows: ∬ [{f ₂₁ (x, y) + c ^pattern ₂₁ } -z ₂₁ (x,
y)] ² dxdy = 0 may be executed so as to be solved.

The obtained constant term c ^pattern ₂₁ is used for determining the offset correction amount to be reflected at the time of measuring the surface position, as described later, and the surface shape function f ₂₁ (x, y) obtained here is the measurement point 19 , 20, 22, 23 are used to find the offset associated with the detection.

First, the method of obtaining the detection error in the area where the measurement points 19, 20, 22, and 23 are on the pattern will be described.

Regarding the measuring point 19, in the D, E, G, H, I, O and P areas where the measuring point 19 is on the pattern,
The measured value of the surface position is z ^pattern ₁₉ . Then, the surface shape function of the measurement point 19 in this area is represented by f (X, Y) + c ^pattern
₁₉ In this ^case, c patter ⁿ ₁₉ is the constant term of the surface shape function.

Here, it is assumed that z ^pattern ₁₉ and the surface shape function f (X, Y) that does not include a constant term take the following values in each of the above areas.

Z ^pattern ₁₉ (X, Y) = z ^pattern ₁₉ (x
+ Δx, y + δy) f (X, Y) = f ₂₁ (x + δx, y + δy) f ₂₁ (x + δx, y + δy) is the surface shape function f ₂₁ (x) obtained by executing the least squares method on the measurement point 21. x,
y) is the coordinate value (x + δx, y + δ) corresponding to the measurement point 19.
y) is substituted.

Then, similarly to the above, z ^pattern ₁₉ (x + δx, y + δy) = f ₂₁ (x + δ
It can be expressed as x, y + δy) + c ^pattern ₁₉ .

Then, the coefficient of the surface shape function f ₂₁ (x, y) is fixed to the value obtained by executing the least squares method on the above-mentioned measurement point 21, and D, E, G, H, I , The O, P measured values z ^pattern ₁₉ are used as the surface position data, and only the constant term c ^pattern ₁₉ is newly calculated using the least squares method.

[0280] This method, coefficient of f ₂₁ (x, y) is not fixed to the minimum square method of the subject, with respect to the constant term _{^{c pattern 19, ∬ [{f}} 21 (x + δx, y + δy) + c pattern 19} −
z ^pattern ₁₉ (x + δx, y + δy)] ² dxdy = 0 may be executed so as to be solved.

Similar to the above, regarding the measuring point 20, the measuring point 20 is located on the pattern B, E, F, H, I, J,
Measurements z ^pattern ₂₀ in the Q area surface position de - used as data, the coefficient of f ₂₁ (x, y) is not fixed to the minimum square method of the subject, with respect to the constant term c ^pattern _20, ∬ [{ f ₂₁ (x + δx, y−δy) + c ^pattern ₂₀ } −
z ^pattern ₂₀ (x + δx, y−δy)] ² dxdy = 0 may be executed so as to be solved.

Regarding the measuring point 22, the measured value z ^pattern ₂₂ in the C, D, F, G, H, M and N areas where the measuring point 22 is on the pattern is used as the surface position data and f ₂₁ ( x,
The coefficient of y) is fixed and is not the object of the least squares method, and ∬ [{f ₂₁ (x−δx, y + δy) + c ^pattern ₂₂ } − for the constant term c ^pattern ₂₂ .
z ^pattern ₂₂ (x−δx, y + δy)] ² dxdy = 0 may be executed so as to be solved.

Regarding the measuring point 23, the measured value z ^pattern ₂₃ in the B, C, F, G, I, K and L areas where the measuring point 23 is on the pattern is used as the surface position data and f ₂₁ ( x,
The coefficient of y) is fixed and is not the object of the least squares method, and ∬ [{f ₂₁ (x−δx, y−δy) + c ^pattern ₂₃ } − for the constant term c ^pattern ₂₃ .
z ^pattern ₂₃ (x−δx, y−δy)] ² dxdy = 0 may be executed so as to be solved.

The constant terms c ^pattern ₁₉ , c obtained here
^{The pattern} ₂₀ , c ^pattern ₂₁ , and c ^{patt ern} ₂₃ are used to determine the offset correction amount to be reflected when measuring the surface position, as described later.

Next, how to obtain the detection offset in the area where the measurement points 19, 20, 22, and 23 are on the boundary of the pattern will be described below.

The positional relationship between the measurement points and the pattern is shown in FIG.
The case of the arrangement shown in case-1 will be described.

The measurement points in the arrangement shown in case-1 in FIG. 32 are the measurement points 19 in the B and J areas and the measurement points 2 in the B and K areas.
It is 2. Then, the measurement value of the surface position of the measurement points 19 and 22 in this area is 1z ^border ₁ , and the surface shape function is f (X, Y).
+ C ^border ₁ At this time, c ^border ₁ is a constant term of the surface shape function.

Then, the surface position z ^border ₁ becomes z ^border ₁ = f (X, Y) + c ^border ₁ .

Here, z ^border ₁ and the surface shape function f (X, Y) not including a constant term take the following values in the B area. That is, z ^border ₁ (X, Y) = z ^pattern ₁₉ (x + δx, y + δy) f (X, Y) = f ₂₁ (x + δx, y + δy) and z ^border ₁ (X, Y) = z ^pattern ₂₂ (x−δx) , Y + δy) f (X, Y) = f ₂₁ (x−δx, y + δy), and f ₂₁ (x + δx, y + δy) is assigned to the surface shape function f ₂₁ (x, y) at the measurement points 19 and ₂₂ as described above. Corresponding coordinate values (x + δx, y + δy) and (x−δx, y + δ)
y) is substituted.

Similarly, in the J area, z ^border ₁ (X, Y) = z ^pattern ₁₉ (x + δx, y + δy) f (X, Y) = f ₂₁ (x + δx, y + δy), and in the K area, z ^border ₁ (X, Y) = z ^pattern ₂₂ (x−δx, y + δy) f (X, Y) = f ₂₁ (x−δx, y + δy).

Then, the measured values of the B, J, and K areas z ^border
₁ is used as the surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least square method is not applied, and the least square method is executed for the constant term c ^border ₁ .

That is, ∬ [{f (X, Y) + c ^border ₁ } -z ^border ₁ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-2 in FIG. 32 are the measurement points 20 in the D and O areas and the measurement points 2 in the D and N areas.
It is 3. Then, the measurement value of the surface position of the measurement points 20 and 23 in this area is z ^border ₂ , and the surface shape function is f (X, Y) +
c ^border ₂

Then, the measured values of the D, N, O areas z ^border
₂ is used as surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₂ .

That is, ∬ [{f (X, Y) + c ^border ₂ } -z ^border ₂ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-3 in FIG. 32 are the measurement points 19 in the C and M areas and the measurement points 2 in the C and L areas.
It is 0. Then, the measurement value of the surface position of the measurement points 19 and 20 in this area is z ^border ₃ , and the surface shape function is f (X, Y) +
c ^border ₃

Then, the measured values of the C, M, and L areas z ^border
₃ is used as surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₃ .

That is, ∬ [{f (X, Y) + c ^border ₃ } -z ^border ₃ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-4 of FIG. 32 are the measurement points 22 in the E and P areas and the measurement points 2 in the E and Q areas.
It is 3. Then, the measurement value of the surface position of the measurement points 22 and 23 in this area is z ^border ₄ , and the surface shape function is f (X, Y) +
c ^border ₄

Then, the measured values of the E, P, and Q areas z ^border
₄ is used as the surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₄ .

That is, ∬ [{f (X, Y) + c ^border ₄ } -z ^border ₄ (X,
Y)] ² dXdY = 0 may be solved.

In case-2 to 4, the measured value z
^border ₂ , z ^border ₃ , z ^border ₄ and face shape function f
(X, Y) is defined in the same way as in case-1 depending on each area, but the values are different. The detailed description is the same as that described above, and will be omitted.

The positional relationship between the measurement points and the pattern is shown in FIG.
The case where the arrangement is shown in case-5 is explained. Of FIG. 32
The measurement point in the arrangement shown in case-5 is the measurement point 1 in the F area.
9, measurement points 20 in the K area and measurement points 22 in the L area. Then, the measurement value of the surface position of the measurement points 19, 20, and 22 in this area is z ^border ₅ , and the surface shape function is f (X, Y) +
c ^border ₅ At this time, c ^border ₅ is a constant term of the surface shape function.

Then, the surface position z ^border ₅ becomes z ^border ₅ = f (X, Y) + c ^border ₅ .

Here, it is assumed that z ^border ₅ and the surface shape function f (X, Y) that does not include a constant term take the following values in the F area.

That is, z ^border ₅ (X, Y) = z ^pattern ₁₉ (x + δx, y + δy) f (X, Y) = f ₂₁ (x + δx, y + δy), and f ₂₁ (x + δx, y + δy) is the same as above. The coordinate value (x + δx, y + δy) corresponding to the measurement point 19 is substituted into the surface shape function f ₂₁ (x, y).

Similarly, in the K area, the value of z ^border ₅ (X, Y) = z ^pattern ₂₀ (x + δx, y−δy) f (X, Y) = f ₂₁ (x + δx, y−δy) becomes the L area. Then, z ^border ₅ (X, Y) = z ^pattern ₂₂ (x−δx, y + δy) f (X, Y) = f ₂₁ (x−δx, y + δy).

Then, the measured values of the F, K, and L areas z ^border
₅ is used as surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is not applied, and the least squares method is executed on the constant term c ^border ₅ .

That is, ∬ [{f (X, Y) + c ^border ₅ } -z ^border ₅ (X,
Y)] ² dXdY = 0 may be solved.

Measurement points in the arrangement shown in case-6 of FIG.
Is the measurement point 19 in the Q area, the measurement point 22 in the I area, and J
It is the measurement point 23 of the area. And the measurement points in this area
The measured values of the surface positions of 19, 22, 23 are z^border ₆, Surface shape
Form function f (X, Y) + c^border ₆And

Then, the measured values of the Q, I, and J areas z ^border
₆ is used as the surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₆ .

That is, ∬ [{f (X, Y) + c ^border ₆ } -z ^border ₆ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-7 of FIG. 32 are the measurement points 20 in the P area, the measurement points 22 in the O area, and H.
It is the measurement point 23 of the area. Then, the measured value of the surface position of the measurement points 20, 22, 23 in this area is z ^border ₇ , and the surface shape function is f (X, Y) + c ^{borde r} ₇ .

Then, the measured values of the P, O, and H areas z ^border
₇ is used as surface position data, the coefficient of the surface shape function f21 is fixed, and the least squares method is performed on the constant term c ^border ₇ .

That is, ∬ [{f (X, Y) + c ^border ₇ } -z ^border ₇ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-8 in FIG. 32 are the measurement points 19 in the N area, the measurement points 20 in the G area, and M.
It is the measurement point 23 of the area. Then, the measured value of the surface position of the measurement points 19, 20, and 23 in this area is z ^border ₈ , and the surface shape function is f (X, Y) + c ^border ₈ . And N,
The measured value z ^border ₈ in the G and M areas is used as the surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the constant term c ^{border is used.}
Least squares is applied to ₈ .

That is, ∬ [{f (X, Y) + c ^border ₈ } -z ^border ₈ (X,
Y)] ² dXdY = 0 may be solved.

In case-6 to 8, the measured value z
^border ₆ , z ^border ₇ , z ^border ₈ and face shape function f (X,
Y) is defined by each area as in case-5, but the values are different. The detailed description is the same as that described above, and will be omitted.

The positional relationship between the measurement points and the pattern is shown in FIG.
The case of the arrangement shown in case-9 will be explained. Of FIG. 32
The measurement points in the arrangement shown in case-9 are the measurement points 23 in the O and P areas. Then, the measured value of the surface position of the measurement point 23 in this area is z ^border ₉ , and the surface shape function is f (X, Y) + c.
^border ₉ At this time, c ^border ₉ is a constant term of the surface shape function.

Then, the surface position z ^border ₉ becomes z ^border ₉ = f (X, Y) + c ^border ₉ .

Here, z ^border ₉ and the surface shape function f (X, Y) that does not include a constant term take the following values in the O and P areas.

That is, z ^border ₉ (X, Y) = z ^pattern ₂₃ (x-δx, y-δ
y) f (X, Y) = f ₂₁ (x−δx, y−δy), and f ₂₁ (x−δx, y−δy) is measured by the surface shape function f ₂₁ (x, y) as described above. The coordinate values (x-δx, y-δy) corresponding to the point 23 are substituted.

Then, the measured values z ^border ₉ of the O and P areas are used as the surface position data, the coefficient of the surface shape function f21 is fixed, and the least squares method is not used, and the minimum for the constant term c ^border ₉ Performs the square method.

That is, ∬ [{f (X, Y) + c ^border ₉ } -zb ^border ₉ X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-10 in FIG. 32 are the measurement points 20 in the M and N areas. The measured value of the surface position of the measurement point 20 in this area is z ^border ₁₀ , and the surface shape function is f
(X, Y) + c ^border ₁₀ Then, the measured values z ^border ₁₀ in the M and N areas are used as surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₁₀ .

That is, ∬ [{f (X, Y) + c ^border ₁₀ } -z ^border ₁₀ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-11 in FIG. 32 are the measurement points 19 in the K and L areas. The measured value of the surface position of the measurement point 19 in this area is z ^border ₁₁ , and the surface shape function is f.
(X, Y) + c ^border ₁₁ Then, the measured values z ^border ₁₁ in the K and L areas are used as the surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₁₁ .

That is, ∬ [{f (X, Y) + c ^border ₁₁ } -z ^border ₁₁ (X,
Y)] ² dXdY = 0 may be solved.

The measurement points in the arrangement shown in case-12 of FIG. 32 are the measurement points 22 in the J and O areas. The measurement value of the surface position of the measurement point 22 in this area is z ^border ₁₂ , and the surface shape function is f.
(X, Y) + c ^border ₁₂ Then, the measured values z ^border ₁₂ in the J and O areas are used as surface position data, the coefficient of the surface shape function f ₂₁ is fixed, and the least squares method is performed on the constant term c ^border ₁₂ .

That is, ∬ [{f (X, Y) + c ^border ₁₂ } -z
^border ₁₂ (X, Y)] ² dXdY = 0 can be solved.

In case-10 to 12, the measured value z
^border ₁₀ , z ^border ₁₁ , z ^border ₁₂ and face shape function f
(X, Y) is defined in the same manner as in case-9, depending on each area, but the values are different. The detailed description is the same as that described above, and will be omitted.

As described above, the detection offsets in the area where the measurement points 19 to 23 are on the pattern and the area where the measurement points 19, 20, 22, and 23 are on the boundary of the pattern are obtained.

The constant term c ^pattern ₁₉ to c obtained next
^pattern ₂₃ and, using a c ^border ₁ ~c ^border _{1 2} of each value to calculate the offset to be reflected upon Similarly surface position measurement and the above-described embodiments.

That is, assuming that the respective offsets when the measurement points 19 to 23 are on the pattern are PT ₁₉ to PT ₂₃ , PT ₁₉ = c ^pattern ₁₉ PT ₂₀ = c ^pattern ₂₀ PT ₂₁ = c ^pattern ₂₁ PT ₂₂ = c ^pattern ₂₂ PT ₂₃ = c ^pattern ₂₃ .

The offset of each measurement point when the measurement points 19, 20, 22, and 23 are on the boundary of the pattern is BD ₁ to.
When ^{_{BD 12, BD 1 = c border}} 1 BD 2 = c border 2 BD 3 = c border 3 BD 4 = c border 4 BD 5 = c border 5 BD 6 = c border 6 BD 7 = c border 7 BD 8 = c ^border ₈ BD ₉ = c ^border ₉ BD ₁₀ = c ^border ₁₀ BD ₁₁ = c ^border ₁₁ BD ₁₂ = c ^border ₁₂ .

When the offset with respect to the measuring point 21 is CT obtained in advance by experiments as in the above-mentioned embodiment, each of the measuring points 19, 20, 22, 23 is on the pattern. Offset is PT ₁₉ , PT ₂₀ , P
If T ₂₂ and PT ₂₃ , then PT ₁₉ = c ^pattern ₁₉ −c ^pattern ₂₁ + CT PT ₂₀ = c ^pattern ₂₀ −c ^pattern ₂₁ + CT PT ₂₂ = c ^pattern ₂₂ −c ^pattern ₂₁ + CT PT ₂₃ = c ^pattern ₂₃ −c ^pattern It becomes ₂₁ + CT.

The offset of each measurement point when the measurement points 19, 20, 22, 23 are on the boundary of the pattern is BD ₁ to.
Let BD ₁₂ be BD ₁ = c ^border ₁ -c ^pattern ₂₁ + CT BD ₂ = c ^border ₂ -c ^pattern ₂₁ + CT BD ₃ = c ^border ₃ -c ^pattern ₂₁ + CT BD ₄ = c ^border ₄ -c ^pattern ₂₁ + CT BD ^{_{5 = c border 5 -c pattern 21}} + CT BD 6 = c border 6 -c pattern 21 + CT BD 7 = c border 7 -c pattern 21 + CT BD 8 = c border 8 -c pattern 21 + CT BD 9 = c border 9 - c ^pattern ₂₁ + CT BD ₁₀ = c ^border ₁₀ −c ^pattern ₂₁ + CT BD ₁₁ = c ^border ₁₁ −c ^pattern ₂₁ + CT BD ₁₂ = c ^border ₁₂ −c ^pattern ₂₁ + CT.

Offsets PT _{19 to} PT obtained here
Stores ₂₃ and 12 offset BD ₁ ~BD ₁₂ into memory.

Now, the offset to be reflected on each measurement point can be set. The method of reflecting the offset at the time of exposure is also the same as that of the above-described embodiment, and the offset OF of each measurement point 19 to 23 read from the memory by the focus control device 18
In S _{19 to} OFS ₂₃ , the exposure area is in any area (A to
Depending on Q), the value according to the table below shall be taken.

[0340]

[Table 5]

Read offsets OFS _{19 to} OFS
₂₃ by using the surface position data of the exposure area - calculating the value Z ₁₉ to Z ₂₃ with the corrected data z ₁₉ to z _23.

That is, Z ₁₉ = z ₁₉ -OFS ₁₉ Z ₂₀ = z ₂₀ -OFS ₂₀ Z ₂₁ = z ₂₁ -OFS ₂₁ Z ₂₂ = z ₂₂ -OFS ₂₂ Z ₂₃ = z ₂₃ as in the second embodiment. -OFS _{23 Based on} these new surface position data Z _{19 to} Z ₂₃ , the least square plane of the exposure area is obtained. Since a series of operations for transferring the reticle pattern is the same as that in the above-described second embodiment, description thereof is omitted.

By using the method of this embodiment, even if the measurement point is in the boundary area of the pattern and there are 17 types of detection errors to be corrected, the amount of detection error can be calculated by using the “surface shape function constant method”. It becomes possible to decide. Moreover, compared with the second embodiment, the detection error (offset correction amount) can be determined with the same number of measurement shots, and the detection error (offset correction amount) is determined for one lot of a large number of lots. It is similar to the above-described embodiment that if the value is obtained only for the first wafer and the values obtained for the first and subsequent wafers are used, the decrease in throughput can be almost ignored.

The procedure for determining the above detection error (offset correction amount) is briefly shown in the flowchart of FIG.

FIG. 34 is a schematic view of the essential portions of Embodiment 3 of the present invention.
FIG. 35 is an enlarged explanatory diagram of a part of FIG. 34.

34 and 35, the same elements as those shown in FIGS. 1 and 2 are designated by the same reference numerals.

Next, part of the configuration of this embodiment is shown in FIG.
Although it overlaps with the first embodiment of FIG. 2, it will be described.

In FIG. 34, 1 is a reduction type projection optical system (projection lens system), and Ax is the optical axis of the projection optical system 1.
A reticle 1a has a circuit pattern formed on its surface and is mounted on the reticle stage 1b. An illumination system 1c uniformly illuminates the surface of the reticle 1a. The projection optical system 1 reduces and projects the circuit pattern on the surface of the reticle 1a onto the surface of the wafer 2. The wafer 2 is adsorbed and fixed on the surface of the wafer stage 3.

The wafer stage 3 is the optical axis A of the projection optical system 1.
A plane (x-y plane) that is movable in two directions (x, y directions) in a plane (x-y plane) orthogonal to the x direction (z direction) and the optical axis Ax. The tilt can be adjusted with respect to.

Thus, the surface position of the wafer 2 placed on the surface of the wafer stage 3 can be adjusted arbitrarily. A stage control device 4 drives and controls the wafer stage 3 based on a signal from a focus control device 18, which will be described later.

SA is light irradiation means, SB is projection means, SC
Is photoelectric conversion means, and these constitute a part of a surface position detecting device for detecting surface position information of the surface of the wafer 2.
The projection means SB and the photoelectric conversion means SC are combined with the detection means SB.
It constitutes C.

In this embodiment, a circuit pattern on the surface of the reticle 1a is projected on the wafer 2 by the projection optical system 1 by using the surface position detecting device.
When projecting onto the surface, the wafer stage 3 is drive-controlled so that the exposure area on the surface of the wafer 2 is located within the allowable depth of focus of the projection optical system 1. Then, the wafer stage 3 is moved to X
The rectangular pattern regions (shots) 39 are sequentially formed on the surface of the wafer 2 by sequentially moving them on the -Y plane.

Next, each element of the surface position detecting device of this embodiment will be described. First, the light irradiation means SA for making a plurality of light beams incident on the surface of the wafer 2 will be described.

Reference numeral 5 denotes a light source, which is composed of a white lamp or an illumination unit configured to emit light of a plurality of different wavelengths. Reference numeral 6 denotes a collimator lens, which emits the light flux from the light source 5 as a parallel light flux whose cross-sectional intensity distribution is substantially uniform.

Reference numeral 7 is a prism-shaped slit member,
A pair of prisms are attached to each other such that their slopes face each other, and a plurality of openings (five pinholes) 71 to 75 are formed on the attachment surface. Reference numeral 8 denotes a lens system, which is composed of both telecentric systems, and has five independent light fluxes 71a to 75a which have passed through the plurality of pinholes 71 to 75 of the slit member 7 and five measuring points 19 on the surface of the wafer 2 via the mirror 9. The light is guided at an incident angle approximately equal to -23.

At this time, the projected images are made to be pinhole images having substantially the same size. Further, the lens system 8 has an aperture stop 40 therein for aligning the NAs of the light beams 71a to 75a. In this embodiment, each of the above elements 5,
The light irradiation means SA is composed of 6, 7, 8, and 9.

In this embodiment, the angle of incidence φ of each light beam from the light irradiation means SA on the surface of the wafer 2 (the angle formed by the perpendicular to the wafer surface) is φ = 70 ° or more. As shown in FIG. 23, a plurality of pattern areas (exposure area shots) 39 are arranged on the wafer 2 surface. The five light beams 71a to 75a that have passed through the lens system 8 are incident on the measurement points 19 to 23, which are independent of each other, of the pattern region 39.

The five luminous fluxes 71a to 75a incident on the surface of the wafer 2 are in the vertical direction of the wafer 2 (optical axis Ax direction).
The direction rotated by θ ° (θ = 22.5 °) in the XY plane from the X direction (shot arrangement direction) on the surface of the wafer 2 so as to be observed independently from each other as shown in FIG. More incident. As a result, the same effect as that of the first embodiment is obtained.

The five pinholes 7 of the slit member 7
1 to 75 are provided on the same plane conjugate with the wafer 2 so as to satisfy the Scheimpflug condition with the surface of the wafer 2.
The size and shape of the pinholes 71 to 75 of the slit member 7 and the distance from the lens system 8 are set so that pinhole images of substantially the same size are formed on the surface of the wafer 2.

In this embodiment, each of the above elements 5, 6, 7,
A plurality of light fluxes (pinholes) are incident on the surface of the wafer 2 by the light irradiation means SA composed of 8 and 9. In the present embodiment, the number of measurement points on the surface of the wafer 2 is not limited to five, and any number may be used.

Next, a plurality of reflected light beams from the wafer 2 surface are converted into C
The projection means SB that guides light onto the detection surface 17 of the photoelectric conversion means SC as a position detection element made of a CD to form an image will be described.

Reference numeral 11 denotes a light receiving lens, which is composed of both telecentric systems. Five reflected light beams from the surface of the wafer 2 are incident on the light receiving lens 11 via the mirror 10. The light-receiving lens 11 forms pinhole images at the positions 24-28 with respect to the measurement points 19-23. Four
Reference numeral 1 denotes a stopper provided on the light receiving lens 11, which has the same effect as that of the first embodiment. The light fluxes from the pinhole images at the positions 24 to 28 are five correction optical systems 1 provided independently.
The light is entering from 2 to 16.

Since the light receiving lens 11 of the correction optical systems 12 to 16 is a bi-telecentric system, the optical axes thereof are parallel to each other, and the pinhole images formed at the positions 24 to 28 are detected by the photoelectric conversion means SC. The images are re-imaged on the surface 17 so that the spot lights have the same size. The photoelectric conversion means SC is composed of a single two-dimensional CCD. In this embodiment, the above-mentioned elements 10, 11, 12 to 16 constitute a projection means SB.

The correction optical systems 12 to 16 each have a plane-parallel plate having a predetermined thickness and a lens system.
It is coaxial or eccentric with respect to the optical axis of 1. At this time, the plane parallel plate is used to correct the optical path length of each lens system. In addition, the lens system includes a detection surface 17 of each measurement point 19 to 23.
It is provided for correction so that the imaging magnification (projection magnification) above becomes substantially equal.

That is, in the oblique incidence imaging optical system in which a plurality of light beams are obliquely incident on the wafer surface as in the present embodiment, a plurality of measurement points 19 to 23 having different distances from the light receiving lens 11 are provided by the photoelectric conversion means SC. When forming an image on the detection surface 17, the image forming magnifications differ from each other.

Therefore, in this embodiment, correction optical systems 12 to 16 are provided for the respective measurement points, and the respective measurement points 19 to 2 are provided.
The projection magnifications of No. 3 and No. 3 on the detection surface 17 are made substantially equal (this correction optical system is described in detail in Japanese Patent Application No. 2-44236 of the present applicant).

At this time, each measurement point 19 on the wafer 2 surface is measured.
The position of the pinhole image (spot light) incident on the detection surface 17 is changed depending on the surface positions (height direction, optical axis Ax direction) of 23. The photoelectric conversion means SC detects the position change of the pinhole image at this time. As a result, in this embodiment, the surface position information of the measurement points 19 to 23 on the wafer 2 surface can be detected with the same accuracy.

Further, the measurement points 19 to 23 on the wafer 2 surface and the detection surface 17 of the photoelectric conversion means SC are conjugated with each other via the projection means SB (for each measurement point 19 to 23). I am performing fall correction). As a result, the position of the pinhole image on the detection surface 17 does not change due to the local inclination of each of the measurement points 19 to 23, and the optical axis A on the surface of the wafer 2 does not change.
The position of the pinhole image on the detection surface 17 is changed in response to the local change of the height position of each measurement point in the x direction, that is, the height of the measurement points 19 to 23.

The photoelectric conversion means SC detects the incident position information of the pinhole image incident on the detection surface 17 surface. The incident position information of the pinhole image at each measurement point 19 to 23 obtained by the photoelectric conversion unit SC is input to the focus control unit 18.

The focus control means 18 is a photoelectric conversion means S.
Height information (surface position information) of each measurement point 19 to 23 from C
Then, the position information of the surface of the wafer 2, that is, the position in the optical axis Ax direction (z direction), the inclination with respect to the XY plane, and the like are obtained. Then, a signal relating to the drive amount of the wafer stage 3 is input to the stage control device 4 so that the surface of the wafer 2 substantially coincides with the projection surface of the reticle 1a by the projection optical system 1.

The stage control device 4 drives and controls the wafer stage 3 according to an input signal from the focus control means 18 to adjust the position and orientation of the wafer 2.

The displacement of the wafer stage 3 in the xy directions is measured by a known method using a laser interferometer (not shown), and a signal indicating the amount of displacement of the wafer stage 3 is transmitted from the laser interferometer via a signal line. Is input to the stage control device 4.

The stage control device 4 controls the position of the wafer stage 3 in the xy directions, and moves the wafer stage 3 in the z direction based on a signal input from the focus control device 18 via a signal line. Control and tilt control are performed. This also applies to the first embodiment.

Next, a method of detecting the surface position of the pattern area 39 on the wafer 2 in this embodiment will be described.

As described above, the main cause of the detection error that occurs when the surface position of the wafer 2 is detected by the optical surface position detecting device of FIG. 34 is the light reflected on the resist surface of the wafer 2 and the substrate surface of the wafer 2. This is interference with the reflected light. Since the influence of this interference varies depending on the pattern formed on the wafer substrate surface, the measurement error due to the interference has a different value for each of the plurality of measurement points 19 to 23.

In the reduction projection exposure apparatus as shown in FIG. 34, the pattern on the reticle 1a is sequentially transferred to each exposure area on the wafer 2 by the step & repeat method.
At this time, before performing surface position detection and pattern transfer, the IC pattern and the reticle pattern already formed in the exposure area of the wafer 2 are aligned.

The optical surface position detecting device is the projection lens system 1
The reticle 1a is also fixed to the projection lens system 1 at a fixed position. Therefore, if the surface position is detected after the alignment between the reticle pattern and the exposure area of the wafer 2, the measurement points 19 to 23 are
The height positions of substantially the same position in each exposure area arranged on the wafer 2 are detected.

This corresponds to the fact that the measurement points 19 to 23 detect the height position of the portion having the same substrate (pattern) structure in each exposure area.

Therefore, the influence on the detection result due to the interference between the light reflected on the resist surface of the wafer 2 and the light reflected on the substrate surface of the wafer 2 may be a value unique to each measurement point in the exposure area. As expected, the present inventor confirmed by experiments that a substantially constant detection error occurs in each measurement.

By applying this phenomenon to surface position detection, the detection error at each measurement point is measured in advance, and the detection error at each measurement point is calculated from the surface position data relating to each measurement point in the exposure area. How to correct and obtain accurate surface position information,
The applicant has proposed in Japanese Patent Laid-Open No. 102518/1990.

In this embodiment, the positional relationship between the exposure area 39 and the measurement points 19 to 23 of the surface position detecting device is such that the exposure area 39 and the rectangle connecting the measurement points 19, 20, 22, and 23 are connected as shown in FIG. It is assumed that the rectangles are almost equal.

At this time, the measurement point 21 is located in the substantially central portion of the exposure area 39, and intersects the optical axis AX at the time of measuring the surface position.
The surface position detection device adjusts the mounting position in advance. The remaining measurement points 19, 20, 22, and 23 are located in the peripheral portion of the exposure area 39, and the origins of the height measurement of the measurement points 19 to 23 are adjusted in advance so that they are on the same plane. The projection lens system 1 is made to substantially coincide with the best image plane.

At this time, the exposure area is divided into 17 areas A to Q as shown in FIG. 37, depending on whether each of the measurement points 19 to 23 is on the pattern or on the boundary.

When each of the measurement points is on the boundary of the pattern, there are 12 possible positional relationships as shown in case-1 to case-12 of FIG. In FIG. 38, the circles represent the measurement points, and the shaded areas represent a part of the measurement points on the pattern. The positional relationship between the measurement point and the pattern boundary is 12
That is, the fact that there are 12 types of detection errors (offset correction amounts) exists in the area where the measurement points are in the boundary region.

Considering the area above the pattern and the area at the boundary area for each of the measurement points 19 to 23, the following table is obtained.

[0386]

[Table 6]

Further, in the area in the boundary area, the measurement point 1
As shown in the table below, 9, 20, 22, and 23 have different positional relationships between the measurement points and the patterns.

[0388]

[Table 7]

Then, it is necessary to obtain a total of 17 types of detection errors, with 5 types of detection errors in the regions on the pattern and 12 types of detection errors in the regions in the boundary area with the pattern.

In the third embodiment of the present invention, when the positional relationship between the measurement points and the pattern is, for example, the arrangement shown in case-9 of FIG. 38, that is, the offset of the measurement points 23 in the O and P areas is as follows. Is decided.

The measurement points 21 for a plurality of exposure areas are set in advance.
The surface shape function that does not include the constant term determined from the measured value of is defined as f (X, Y), and the measured value of the surface position of the measurement point 23 in the O and P areas is defined as z ^border ₉ X, Y). When, the surface shape function f
The coefficient of 21 is fixed and is not the object of the least squares method, and the least squares method is executed for the constant term c ^border ₉ .

That is, ∬ [{f (X, Y) + c ^border ₉ } -z ^border ₉ (X,
Y)] ² dXdY = 0 is solved, and the value of this constant term c ^border ₉ is used as the offset of the measurement points 23 in the O and P areas.

However, in this method, the xy coordinates of the measurement point 21 are (x, y) and the xy coordinates of the measurement point 23 are (x-δx,
y−δy), the surface position of the measurement point 23 is (δx, δ).
y) Extrapolation is performed using a surface shape function that represents measurement points 21 that are apart from each other, and the offset value is determined by assuming that the difference from the extrapolated value is a measurement error amount caused by the influence of interference.
Change in topography (unevenness) between measurement points 21 and 23
If so, a measurement error may occur in the obtained offset value.

This topography change is reduced to a substantially negligible amount by the averaging effect when the number of predetermined exposure areas for determining the offset value is large. In case of obtaining the offset of the measurement points 23 in the O and P areas shown in case-9, only two exposure areas can be selected for determining the offset value, and the influence of the change in topography is There may be an error amount.

Therefore, in the present embodiment, even if there are irregularities in the exposure area such as the peripheral portion of the wafer, the effect of this local topography is improved by using the method described below.

First, the exposure area 3 for measuring the detection error
It is assumed that 9 is determined in advance in four areas K, M, O, and Q.

The reason for choosing the four areas K, M, O and Q is as shown in the table below.

[0398]

[Table 8]

The detection error in the area above the pattern is 5
This is because the detection error in the area in the boundary area between the type and the pattern can include all 12 types, that is, 17 types in total.

Further, the surface position detecting apparatus of this embodiment forms a plurality of pinhole images on the measurement points 19 to 23 almost at the same time, and a correction optical system is provided for each measurement point to make a plurality of measurements. The magnification, resolution, and accuracy for detecting the height position of each measurement point are set to be approximately equal to each other.

Further, the aperture diaphragm 40 provided in the lens system 8 makes the NAs substantially the same, and the lens system 8 makes the exit side telecentric so that the respective luminous fluxes 71a-75.
The light is incident on the measurement points 19 to 23 of a at substantially equal angles.

That is, the surface position detecting device of this embodiment is
The optical characteristics of the plurality of measurement points 19 to 23 are all the same. Therefore, the detection error of the measurement points 19, 20, 22, 23 can be obtained using the measurement point 21.

First, the wafer stage 3 is moved so that the exposure area 39 in the K area on the wafer 2 is sent directly under the projection lens system 1 to align it with the reticle pattern.
At this time, the movement control of the wafer stage 3 is performed using the output signal from the laser interferometer. Then, the wafer 2 is fixed at a height position where the height position measurement value (direction of the optical axis AX) of the measurement point 21 becomes substantially zero.

Next, in the upper right diagonal direction of the exposure area 39 in the K area (indicated by a one-dot chain line), the lines are arranged linearly (n + 1).
Provide individual measurement points. This measurement point necessarily includes the positions of the measurement points 19, 21, 23 shown in FIG. or,
(N + 1) measurement points arranged in a straight line are provided in the diagonally leftward diagonal direction (indicated by a chain line). This measurement point is shown in FIG.
The positions of the measurement points 20, 21, and 22 shown in are always included.

Then, with the position in the optical axis AX direction kept at the above-mentioned height position, the wafer stage 3 is sequentially stepwise moved diagonally to the upper right to be arranged linearly (n + 1).
At each position, the height position is measured using only the measuring point 21. The height position measurement value at this time is defined as F ^K _r (m) (m = 1 to n + 1).

Further, with the position in the optical axis AX direction kept at the above-mentioned height position, the wafer stage 3 is sequentially stepwise moved in the diagonal direction to the upper left, and at the (n + 1) positions aligned in a straight line. The height position is measured using only the measurement point 21.
The height position measurement value at this time is set to F ^K _l (m) (m = 1 to n + 1). The signals at the measurement points 21 corresponding to the height positions F ^K _r (m) and F ^K _l (m) are input from the position detection element 17 to the focus control device 18 and stored in the memory.

Similarly, each of the exposure regions 39 in the M, O, and Q areas on the wafer 2 is moved directly under the projection lens system 1 by moving the wafer stage 3, and after alignment with the reticle pattern, the same as above. Shall be sequentially measured.
These height position measurement values are F ^K _r (m) (m = 1 to n + 1) F ^M _l (m) (m = 1 to n + 1) F ^O _r (m) (m = 1 to n + 1) F ^O _l (m) (m = 1 to n + 1) F ^Q _r (m) (m = 1 to n + 1) F ^Q _l (m) (m = 1 to n + 1).

This height position F ^M _r (m), F ^M _l (m), F
The signals of the measurement points 21 corresponding to ^O _r (m), F ^O _l (m), F ^Q _r (m), and F ^Q _l (m) are input from the position detection element 17 to the focus control device 18 and stored in the memory. -Remembered.

Next, how to obtain the correction value of the measurement error will be described. I shall. Reference numeral 91 is an area where a memory and the like are formed, and 92 is a scribe line area where a bonding pad and the like are formed. It is assumed that the exposure region 39 is adjacent to the left, the lower left, and the lower part of the exposure region 39 existing in the K area, but the wafer region 93 in which a pattern is not formed is adjacent to the peripheral region in other directions. .

The cross-sectional structure of the exposure region 39 existing in the K area in the upper right diagonal direction is assumed to have the structure shown in FIG. 39 (B). Area 9 where memory etc. are formed
Reference numeral 1 indicates a convex topography, a scribe line region 92 in which a bonding pad or the like is formed indicates a concave topography, and a wafer region 93 on which no pattern is formed indicates a further concave topography. . However, the surface of the exposed region 39 shows almost flat topography when the resist layer 50 is applied to the entire surface.

Further, FIG. 39B shows the case where there is no inclination with respect to the xy plane on which the wafer stage 3 moves.

FIG. 39C shows a case where the exposure area 39 in the K area located in the peripheral portion of the wafer has a warp on one side.

FIG. 40 (A) shows the exposure area 3 of this K area.
9 shows the height position measurement value of the measurement point 21 when the wafer stage 3 is moved diagonally to the upper right while the position in the optical axis AX direction is maintained at the height position described above. Solid line 60
Indicates a continuous height position measurement value of the measurement point 21 obtained when the wafer stage 3 is continuously moved.
The white circles are the height position measurement values of the measurement points 21 at the (n + 1) positions linearly arranged by sequentially moving the wafer stage 3.

In this structural example, the reflectance on the surface of the resist layer 50 is increased by setting the incident angle φ of the measurement light in FIG. However, the component that passes through the resist layer and is reflected by the wafer substrate is not zero as described above, but the component that is reflected by the surface of the resist layer 50 and the component that is reflected by the wafer substrate are not. The interference causes a measurement error in the measurement value at the height position.

This measurement error is caused by the fact that the measurement point 21 is located at the boundary between the areas 91 and 92 or the areas 92 and 93 having different interference conditions, as can be seen from the measured values 61 to 65 in FIG. It becomes most noticeable when you do. In addition, the measurement point 21
If they are located in the same region, the topography of the surface of the resist layer 50 will be measured almost faithfully. Therefore, this measurement error starts to occur when the measurement point 21 starts over a region where the interference condition is different, and the range where the measurement error occurs is the range where the measurement point 21 passes through the boundary, that is, on the wafer. It is within the size of the measurement point 21.

FIG. 40B shows a measurement point 2 when the exposure area 39 in the K area shown in FIG. 39C has a warp on one side.
It is a height position measurement value of 1. It is considered that warpage or the like is generally generated in the peripheral portion of the wafer, and the influence of warpage or the like is removed from the measured value of FIG.
The correction amount of the detection error must be determined after correcting the measured value in the state shown in FIG.

As a result of many experiments, in FIG. 40 (B), the half cycle of the measurement error (one peak or valley of the measurement value) due to the influence of interference seen in the measurement values 61 to 65 is at most a wafer. The length of the exposure area 39 in the diagonal direction (up to 30 m) is equal to or smaller than the size of the upper measurement point 21 (up to 3 mm).
Since it is shorter than m), it is a "high frequency component" of the height measurement value obtained by moving the wafer stage, whereas the influence of wafer warp is "low frequency component". It was confirmed that it was possible to approximate the curve with a cubic curve.

In this measurement, if the sampling interval of the (n + 1) measurement points is set to be equal to or smaller than the size of the measurement points 21 on the wafer, components such as warp can be detected with sufficient accuracy. It was confirmed that it can be approximated by a cubic curve.

The influence of the warp of the wafer in FIG. 40 (B) is obtained as follows.

That is, the cubic curve is set as f _bend ^K _r (m) = a · m ³ + b · m ² + c · m + d. However, a, b, c and d are constants.

The least squares method is performed on the constants a to d of the cubic curve f _bend (m) by using the discrete measurement values F ^K _r (m).

That is, ∫ {f _bend ^K _rm } -F ^K _r (m)) ² dm = 0 (m = 1 to 1)
n + 1) is calculated to determine f _bend ^K _r (m).

The component f of the sled or the like determined in this way
_{The bend} ^K _r (m) is shown in FIG. 40 (C).

Next, the measured value F in FIG. 40 (B)
A value obtained by removing components such as warp from ^K _r (m), that is, F _pattern ^K _r (m) = F ^k _r (m) −f _bend ^K _r (m) (m = 1
~ N + 1) is calculated. Here, F _pattern ^K _r (m) is as shown in FIG.
It is corrected to the state of (A).

Similarly, ∫ {f _bend ^K _l (m) −F ^K _l (m)} ² dm = 0 ∫ {f _bend ^M _r (m) −F ^M _r (m)} ² dm = 0 ∫ ^{_{{f ben d M l (m}} ) -F M l (m)} 2 dm = 0 ∫ {f bend O r (m) -F O r (m)} 2 dm = 0 ∫ {f bend O l (m ) -F ^O _l (m)} ² dm = 0 ∫ {f _bend ^Q _r (m) -F ^Q _r (m)} ² dm = 0 ∫ {f _bend ^Q _l (m) -F ^Q _l (m) ) ² dm = 0 (m = 1 to n + 1) is calculated, and after determining the coefficient of each cubic curve, F _pattern ^K _l (m) = F ^k _l (m) −f _bend ^K _l (m) F _pattern ^M _r (m) = F ^M _r (m) −f _bend ^M _r (m) F _pattern ^M _l (m) = F ^M _l (m) −f _ben d ^M _l (m) F _pattern ^O _r ( m) = F ^O _r (m) -f _bend ^O _r (m) F _pattern ^O _l (m) = F ^O _l (m) -f _bend ^O _l (m) F _pattern ^Q _r (m) = F ^Q _r (m) -f _bend ^Q _r (m) F _pattern ^Q _l (m) = F ^Q _l (m) -f _{be nd} ^Q _l (m) (m = 1 to n + 1) is calculated to eliminate the influence of warpage.

First, for the measurement point 21 at the center of the exposure area 39, "measurement points on the pattern 19, 20, 22, 2
3 ”relative error amount PT ₁₉ ′, PT ₂₀ ′, PT ₂₂ ′, PT
₂₃ ′, and “Measurement points 19, 20, 22, 2 on the boundary area
3 of case-1 ~case-12 relative error amounts BD ₁ '~BD of "
Ask for ₁₂ ′.

[0427] That ^{_{is, PT 19 '= F pattern O}} r (n + 1) -F pattern O r ((n / 2) +1) PT 20' = F pattern Q l (1) -F pattern Q l (( n / 2) +1) PT ₂₂ ′ = F _pattern ^M _l (n + 1) −F _pattern ^M _l ((n / 2) +1) PT ₂₃ ′ = F _pattern ^K _r (1) −F _pattern ^K _r ((n / 2) +1) and BD ₁ ′ = F _pattern ^K _l (n + 1) −F _pattern ^K _l ((n / 2) +1) BD ₂ ′ = F _pattern ^O _l (1) − _{^{F pattern O l ((n /}} 2) +1) BD 3 '= F pattern M r (n + 1) -F pattern M r ((n / 2) +1) BD 4' = F pattern Q r (1 ) -F _pattern ^Q _r ((n / 2) +1) BD ₅ ′ = F _pattern ^K _l (1) -F _pattern ^K _l ((n / 2) +1) BD ₆ ′ = F _pattern ^Q _r (n +1) -F _pattern ^Q _r ((n / 2) +1) BD ₇ ′ = F _pattern ^O _l (n + 1) −F _pattern ^O _l ((n / 2) +1) BD ₈ ′ = F _pattern ^M _r (1) -F _pattern ^M _r ((n / 2) +1) BD ₉ ′ = F _pattern ^O _r (1) -F _pattern ^O _r ((n / 2) +1) BD ₁₀ ′ = F _pattern ^M _l (1) -F _pattern ^M _l ((n / 2) +1) BD ₁₁ ′ = F _pattern ^K _r (n + 1) −F _pattern ^K _r ((n / 2) +1) BD ₁₂ ′ = F _pattern ^Q _l (n + 1) −F _pattern ^Q _l ((n / 2) +1).

Here, assuming that the offset reflected on the measurement value of the measurement point 21 is PT ₂₁ , the value C stored in the memory in advance is obtained by experimentally exposing the pattern on the wafer.
Let T be PT ₂₁ = CT.

[0429] In this way, the peripheral measuring points 19, 20, 2
By using the experimental value as the offset of the measurement point 21 which is the reference for the height position measurement of 2, 23, the reliability of the overall offset value is improved.

Then, 17 kinds of offsets reflected on the measurement values of the measurement points 19 to 23, that is, the offsets PT _{19 to} P reflected on the "measurement points 19 to 23 on the pattern".
T ₂₃ , and “Measurement points 19, 20, 22, 2 on the boundary area
Offsets BD _{1 to} BD ₁₂ reflected as “case-1 to case-12” of 3 are as follows.

That is, PT ₁₉ = PT ₁₉ '+ CT PT ₂₀ = PT ₂₀ ' + CT PT ₂₁ = CT PT ₂₂ = PT ₂₂ '+ CT PT ₂₃ = PT ₂₃ ' + CT and BD ₁ = BD ₁ '+ CT BD ₂ = BD _{2 '+ CT BD 3 = BD} 3' + CT BD 4 = BD 4 '+ CT BD 5 = BD5' + CT BD 6 = BD 6 '+ CT BD 7 = BD 7' + CT BD 8 = BD 8 '+ CT BD 9 = BD 9' It is assumed that + CT BD ₁₀ = BD ₁₀ ′ + CT BD ₁₁ = BD ₁₁ ′ + CT BD ₁₂ = BD ₁₂ ′ + CT.

Four offset PTs obtained here
₁₉ , PT ₂₀ , PT ₂₂ , PT ₂₃ and 12 offsets B
Store D _{1 to} BD ₁₂ in memory.

Now that the offset to be reflected on each measurement point has been set, the method of reflecting the offset at the time of exposure will be described next.

[0434] After the offset setting is completed, the first
The wafer stage 3 is moved so that the exposure area is directly below the projection lens system 1, and the first exposure area is aligned with the reticle pattern. After the alignment is completed, the surface position detection device detects the surface positions of the five measurement points 19 to 23 in the first exposure area, and based on the output signal from the position detection element 17, the measurement of each measurement point is performed in the focus control device 18. Form surface position data.

[0435] The focus control unit 18, a memory - assumed from reading the offset OFS ₁₉ ~OFS ₂₃ of each measuring point 19-23.

At this time, the offset OFS _{19 to be} read depends on which area (A to Q) in FIG. 37 the first exposure area belongs to.
~ OFS ₂₃ shall take the values according to the table below.

[0437]

[Table 9]

Read offsets OFS _{19 to} OFS
₂₃ , the surface position data z ₁₉ of the five measurement points in the first exposure area
To z ₂₃ calculates the value Z ₁₉ to Z ₂₃ corrected for.

That is, Z ₁₉ = z ₁₉ -OFS ₁₉ Z ₂₀ = z ₂₀ -OFS ₂₀ Z ₂₁ = z ₂₁ -OFS ₂₁ Z ₂₂ = z ₂₂ -OFS ₂₂ Z ₂₃ = z ₂₃ -OFS ₂₃ . The focus control device 18 obtains the least-squares plane of the first exposure area based on the new surface position data Z _{19 to} Z ₂₃ .

Further, the focus control device 18 inputs a command signal according to the result of the calculated least squares plane to the stage control device 4 so that the position and inclination of the wafer 2 on the wafer stage 3 in the optical axis AX direction are determined. It is adjusted (corrected). This positions the first exposure area on the wafer 2 at the best image plane of the projection lens system 1. After the adjustment of the surface position, the first exposure area is exposed to transfer the reticle pattern.

After the exposure of the first exposure area is completed,
The wafer stage 3 is driven so that the second exposure area on the wafer 2 is directly below the projection lens system 1, and the same surface position detection, surface position adjustment, and exposure operations as described above are executed. After performing this series of operations until the exposure of the final exposure area is completed,
The wafer 2 is unloaded from the wafer stage 3.

As described above, the determination of the detection error (offset correction amount) at each measurement point on the wafer surface needs to be performed for each process in which the formed pattern is different.

However, it suffices to perform the frequency once for each process. If the detection error (offset correction amount) is determined at the beginning of each process and the value is stored in the memory in the control device, The production can be performed with almost no decrease in the throughput of semiconductor chip production.

When four points in the K, M, O, and Q areas were measured 11 points diagonally to the upper right and the upper left, step movement and alignment between the shots were performed. Assuming that the required time is 0.4 seconds, the movement between the measurement points in the diagonal direction and the measurement time are 0.2 seconds, the time required to obtain the detection error (offset correction amount) is about 2
It's just under 0 seconds.

As described above, the detection error (offset correction amount) is determined only for the first wafer of the lots of lots, and for the subsequent wafers, the value obtained for the first wafer is used. If so, the decrease in throughput can be almost ignored.

The measurement procedure in this case is briefly shown in the flow charts of FIGS. 41 and 42.

In the above-mentioned fourth embodiment, the offset of the measuring point 21 is experimentally determined and the remaining offsets are determined based on this value. However, all the offsets are automatically set as described below, and the offset setting is performed. It is also possible to improve workability.

The measurement error caused by the influence of the interference in the K area shown in FIG. 40A becomes remarkable when the measurement point is located at the boundary of the pattern as described above, and the measurement value shown in FIG. Patterns under the measurement point are regions 91 and 9 like 62 and 63.
Even if they are the same at the boundary of 2, if the arrangement of the regions is reversed,
Even if the magnitude (absolute value) of the measurement error that occurs is the same, the sign is reversed.

Here, considering (n + 1) height position measurement values, the measurement values 62 and 63, 61 and 64 cancel each other, but the scribe line area 92 and the area 93 where no pattern is formed. Boundary region measurement value 65
Only the result remains.

Therefore, considering the average value of the (n + 1) height position measurement values in the K area shown in FIG. 40 (A), [1 / (n + 1)] Σ {F ^K _r ( m)} = C _pattern ^K _r (m = 1 to
n + 1) and a constant value 80 shown in FIG.

Next, FIG. 43 shows a value "F _pattern ^O _r (m)" obtained by correcting components such as warpage of the measured value in the upper right corner in the O area, which is located in a position symmetrical with respect to the K area on the wafer 2. Show.

Here, when considering the (n + 1) height position measurement values, the measurement values 62 and 63, 61 and 64 cancel each other out, and the scribe line area 92 and the area 93 where no pattern is formed. Only the measured value 65 of the boundary region remains in the opposite sign to the K area shown in FIG.

Therefore, (n +) of the O area shown in FIG.
1) Considering the average value of the height position measurement values, [1 / (n + 1)] · Σ {F ^O _r (m)) = C _pattern ^O _r (m = 1 to n
+1) and converges to a constant value indicated by 81 in FIG.

[0454] Then, the value of the following [1 / (n + 1) ] · Σ {F pattern K r (m) + F pattern O r (m)} = C pattern K r + C pattern O r = 0 , and the interference The measurement error caused by the influence of will cancel each other out.

Similarly, [1 / (n + 1)] · Σ {F _pattern ^K _l (m) + F _pattern ^O _l (m )} = C _pattern ^K _l + C _pattern ^O _l = 0 and [1 / (n + 1)] · Σ {F _pattern ^M _r (m) + F _pattern ^Q _r (m)} = C _pattern ^M _r + C _pattern ^Q _r = 0 and occurs at [1 / (n + 1) ] · Σ {F pattern M l (m) + F pattern Q l (m)} = C pattern M l + C pattern Q l = 0 , and the influence of interference The measurement error will cancel each other out.

The applicant of the present application has proposed a method of setting the offset of each measurement point by using the sum of the measurement values in which the measurement errors cancel each other out.
Using this method, the offset of each measurement point is set as follows.

[0457] That ^{_{is, PT 19 = F pattern O r}} (n + 1) - (C pattern K r + C pattern O r) PT 20 = F pattern Q l (1) - (C pattern M l + pattern Q l) PT ₂₁ = F _pattern ^K _r ((n / 2) +1)-(C _pattern ^K _r + C _pattern ^O _r ) PT ₂₂ = F _pattern ^M _l (n + 1)-(C _pattern ^M _l + C _pattern ^Q _l ) PT ₂₃ = F _pattern ^K _r (1)-(C _pattern ^K _r + C _pattern ^O _r ), and BD ₁ = F _pattern ^K _l (n + 1)-(C _pattern ^K _l + C _pattern ^O _l ) BD ₂ = F _{pattern ^{O l (1) - (C}} pattern K l + C pattern O l) BD 3 = F pattern M r (n + 1) - (C pattern M r + C pattern Q r) BD 4 = F pattern Q r (1) - (C _pattern ^M _r + C _pattern ^Q _r ) BD ₅ = F _pattern ^K _l (1)-(C _pattern ^K _l + C _pattern ^O _l ) BD ₆ = F _pattern ^Q _r (n + 1)-(C _pattern ^M _r + C _pattern ^Q _r ) BD ₇ = F _pattern ^O _l (n + 1) − (C _pattern ^K _l + C _pattern ^{O _{l) BD 8 = F pattern M}} r (1) - (C pattern M r + C pattern Q r) BD 9 = F pattern O r (1) - (C pattern K r + C pattern O r) BD 10 = F pattern M _{l (1) - (C pattern} M l + C pattern Q l) BD 11 = F pattern K r (n + 1) - (C pattern K r + C pattern O r) BD 12 = F pattern Q l (n + 1) -(C _pattern ^M _l + C _pattern ^Q _l ).

At this time, the offset of the measuring point 21 is PT ₂₁ = F _pattern ^Q _l ((n / 2) +1)-(C _pattern ^M _l + C
_pattern ^Q _l C) or the like may be used.

Five offset PTs obtained here
_{19 ~PT 23,} and 12 stores offset BD ₁ ~BD ₁₂ into memory. Since the method of reflecting the offset at the time of exposure is as described above, the description is omitted.

[0460] Also, when I'll set the offset as shown below, it is possible to reduce the influence of random errors due to _{^{F K r (m) ~F Q}} l noise and the like at the time of measurement of (m).

[0461] ^{_{Here, C pattern = (C pattern K}} r + C pattern O r + C pattern K l + C pattern O l + C pattern M r + C pattern Q r + C pattern M l + C pattern Q l) / 8 and, F _pattern ( (n / 2) +1) = {F pattern K r ((n / 2) +1) + F pattern K r ((n / 2) +1) + F pattern M r ((n / 2) +1) + F _pattern ^M _l ((n / 2) +1) + F _pattern ^O _r ((n / 2) +1) + F _pattern ^O _l ((n / 2) +1) + F _pattern ^Q _l ((n / 2) +1 ) + F _pattern ^Q _l ((n / 2) +1)} / 8.

Then, the offset of each measurement point is set as follows. ^{_{That, PT 19 = F pattern O r}} (n + 1) -C pattern PT 20 = F pattern Q l (1) -C pattern PT 21 = F pattern ((n / 2) +1) -C pattern PT 22 = _{^{Fpattern M l (n + 1)}} -Cpattern PT 23 = Fpattern K r (1) -Cpattern ^{_{and, BD 1 = F pattern K l}} (n + 1) -C pattern BD 2 = F pattern O l (1) -C ^{_{pattern BD 3 = F pattern M r}} (n + 1) -C pattern BD 4 = F pattern Q r (1) -C pattern BD 5 = F pattern K l (1) -C pattern BD 6 = F pattern Q r ( _{n + 1) -C pattern BD 7} = F pattern O l (n + 1) -C pattern BD 8 = F pattern M r (1) -C pattern BD 9 = F pattern O r (1) -C pattern BD 10 = F _pattern ^M _l (1) -C _pattern BD ₁₁ = F _pattern ^K _r (n + 1) -C _pattern BD ₁₂ = F _pattern ^Q _l (n + 1) -C _pattern .

Five offset PTs obtained here
_{19 ~PT 23,} and 12 stores offset BD ₁ ~BD ₁₂ into memory. Since the method of reflecting the offset at the time of exposure is as described above, the description is omitted.

Next, an embodiment of a method of manufacturing a semiconductor device using an exposure apparatus that executes the above-described surface position detecting method will be described. FIG. 44 shows a semiconductor device (IC or LSI
2 shows a flow of manufacturing a semiconductor chip such as a liquid crystal panel, a liquid crystal panel, a CCD, or the like.

In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask manufacturing), a mask having the designed circuit pattern is manufactured. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique using the mask and the wafer prepared above. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip by using the wafer created in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation) and the like. including. In step 6 (inspection), an operation confirmation test of the semiconductor device created in step 5,
Conduct inspections such as durability tests. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 45 shows the detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device which has been difficult to manufacture in the past.

[0469]

According to the present invention, in a system in which a focal plane position detecting mechanism for a plurality of measurement points is formed, even in a peripheral pattern area of a wafer, a surface position correction accuracy equivalent to that of a central pattern area can be obtained. getting can, therefore, throw the entire pattern area on the wafer can be positioned within the permissible depth yield a pattern region located on the periphery of the warping of large wafers, had the effect of significantly improved
A shadow exposure method and a projection exposure apparatus using the same can be achieved.

[Brief description of drawings]

FIG. 1 is a schematic view of a main part of an embodiment of a projection exposure apparatus with a surface position detection device.

FIG. 2 is an explanatory diagram of a part of FIG.

FIG. 3 is an explanatory view of the pinhole (and a plurality of minute pinholes) of FIG. 1.

FIG. 4 is an explanatory diagram when projected onto a wafer having a plurality of minute pinholes.

FIG. 5 is an explanatory view showing the behavior of each light flux of a plurality of minute pinholes on the wafer surface.

6 is an explanatory view showing a plurality of minute pinhole images reflected by the wafer on the detection surface of FIG.

7 is an explanatory view showing a plurality of minute pinhole images reflected by the wafer on the detection surface of FIG. 1. FIG.

FIG. 8 is an explanatory diagram showing the positions of a grid and a pattern region for topography measurement.

FIG. 9 is an explanatory diagram showing topography of a pattern area.

FIG. 10 is a flowchart of an offset value (correction value) calculation method.

FIG. 11 is a flowchart showing an exposure operation including setting of an offset value.

FIG. 12 shows a two-dimensional CCD sensor 12 on the stage 3.
Diagram with 0s

FIG. 13 is a diagram in which a light receiving element 131 with a pinhole 132 is arranged on the stage 3.

FIG. 14 is a flowchart for automatically setting an offset amount (correction amount).

FIG. 15 is a flowchart for automatically setting an offset amount (correction amount).

FIG. 16 is a flowchart for automatically setting an offset amount (correction amount).

FIG. 17 is a flowchart for automatically setting an offset amount (correction amount).

FIG. 18 is an explanatory diagram showing topography of a pattern area.

FIG. 19 is a diagram showing positions of gratings and pattern areas for topography measurement.

FIG. 20 is a diagram showing a behavior of a light flux on a wafer surface in a conventional example.

FIG. 21 is a diagram showing an intensity distribution of a light beam reflected by a wafer on a position detection element in a conventional example.

FIG. 22 is a schematic view of the essential portions of Embodiment 1 of the present invention.

FIG. 23 is an explanatory diagram of a part of FIG. 22.

FIG. 24 is a schematic diagram showing the positional relationship between the exposure area and measurement points in the first embodiment.

FIG. 25 is a layout diagram in which the exposure area regularly formed on the wafer in Example 1 is divided into areas.

FIG. 26 is a diagram showing a positional relationship between a plurality of measurement points and an exposure area.

FIG. 27 is a flowchart of an offset value calculation method according to the first embodiment.

FIG. 28 is a flowchart of an offset value calculation method according to the first embodiment.

FIG. 29 is a flowchart of an offset value calculation method according to the first embodiment.

FIG. 30 is a schematic diagram showing a positional relationship between an exposure area and measurement points in the second embodiment.

FIG. 31 is a layout diagram in which the exposure area regularly formed on the wafer in Example 2 is divided into areas.

FIG. 32 is a diagram showing a positional relationship between measurement points and pattern boundaries.

FIG. 33 is a flowchart of an offset value calculation method according to the second embodiment.

FIG. 34 is a schematic view of the essential portions of Embodiment 3 of the present invention.

FIG. 35 is an explanatory diagram of a part of FIG. 34.

FIG. 36 is a schematic diagram showing the positional relationship between the exposure area and measurement points in the third embodiment.

FIG. 37 is a layout diagram in which the exposure area regularly formed on the wafer in Example 3 is divided into sections.

FIG. 38 is a diagram showing a positional relationship between a plurality of measurement points and an exposure area.

FIG. 39 is a schematic diagram showing the positional relationship of exposure areas and the pattern structure.

FIG. 40 is a schematic diagram showing a measured value of a height position and a warp component with and without a warp.

FIG. 41 is a flowchart showing a procedure for measuring a measurement error.

FIG. 42 is a flowchart showing the procedure for measuring the measurement error.

FIG. 43 is a schematic diagram showing a measured value at a height position in which a warp component is corrected.

FIG. 44 is a diagram of a semiconductor device manufacturing flow.

FIG. 45 is a diagram of a wafer process.

[Explanation of symbols]

SA light irradiation means SB projection means SC photoelectric conversion means 1 Projection lens 1a reticle 2 wafers 3 Wafer stage 4 Stage control means 5 light sources 6 Collimator lens 7 Slit member 8 lens system 9,10 mirror 12 to 16 correction optical system 17 Position detection element (CCD) 18 Focus control device 71-75 pinhole 711-714 Micro pinhole 721-724 micro pinhole 731-734 micro pinhole 741-744 micro pinhole 751-754 micro pinhole

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-5-281458 (JP, A) JP-A-5-280929 (JP, A) JP-A-5-275313 (JP, A) JP-A-5- 251301 (JP, A) JP 5-243121 (JP, A) JP 4-354320 (JP, A) JP 4-116414 (JP, A) JP 3-246411 (JP, A) JP-A-3-233925 (JP, A) JP-A-2-198130 (JP, A) JP-A-2-102518 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/027 G01B 11/00 G03F 7/20 G03F 9/02

Claims (4)

(57) [Claims] 1. A first pattern drawn on a reticle and the first pattern.
Simultaneously with the second pattern, which has a deeper depth of focus than the first pattern, through the projection optical system , a pattern having a step on the wafer is formed.
Before projecting onto the turn area , the pattern area of the wafer is
The surface positions of the projection optical system in the optical axis direction are measured at a plurality of positions in the area, and the pattern of the wafer is measured based on the measurement.
Projection exposure for aligning the light field with the image plane of the projection optical system
In the method , the plurality of locations in the pattern area are
It has 5 points corresponding to the four corners and the center of a fixed quadrangle.
In order to measure the surface position of multiple points, in the pattern area
Project each reflected light flux from the multiple points on the detection surface,
Based on surface position measurement at a plurality of points,
The first pattern of the reticle in the pattern area is projected.
A projection exposure method characterized in that the surface position of a shadowed portion is matched with the image plane . 2. A projection exposure apparatus capable of performing the projection exposure method according to claim 1. 3. A reticle pattern is projected by a projection optical system.
Projection exposure apparatus for sequentially projecting each pattern area on a wafer
At the center and four corners in the pattern area of the wafer
The light beam is projected obliquely incident on each measurement point of the reflected light beam from each position of the pattern region is projected onto the detection surface, the vertical position of each measurement point of the pattern <br/> over down region Change the above
Measured as a position change of each of the reflected light beams on the detection surface ,
Has an oblique incidence type position detection system, and the position of the oblique incidence type
The topography in the pattern area on the wafer is obtained in advance by using the detection system, and the topography in the pattern area of the wafer is calculated.
Before measuring the vertical position change of each measurement point
To previously obtain a measurement error due to the serial topography, before
The pattern on the wafer by the oblique incidence type position detection system.
The measurement error due to the topography was corrected from the measurement value for each measurement point in the scan area, and the error was corrected.
Based on each measured value, the pattern area of the wafer together
A projection exposure apparatus, wherein a region of the reticle pattern in which the finest pattern is to be projected is located at the center within the allowable depth of focus of the projection optical system. 4. A step of exposing a wafer with a reticle pattern using the projection exposure apparatus according to claim 2 or 3 ,
A device manufacturing method characterized by comprising a step of developing the exposed wafer.