JP3428773B2 - Bimorph piezoelectric element and method of manufacturing the same - Google Patents
Bimorph piezoelectric element and method of manufacturing the sameInfo
- Publication number
- JP3428773B2 JP3428773B2 JP09656895A JP9656895A JP3428773B2 JP 3428773 B2 JP3428773 B2 JP 3428773B2 JP 09656895 A JP09656895 A JP 09656895A JP 9656895 A JP9656895 A JP 9656895A JP 3428773 B2 JP3428773 B2 JP 3428773B2
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- JP
- Japan
- Prior art keywords
- piezoelectric ceramic
- ceramic plate
- piezoelectric element
- bimorph
- thermal expansion
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、電気・機械変換素子の
うち、例えば精密位置決め、リレースイッチ等の用途に
用いるバイモルフ圧電素子及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electromechanical conversion element, for example, a bimorph piezoelectric element used for precision positioning, a relay switch and the like, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】一般的な従来のバイモルフ圧電アクチュ
エータの構成を図１に示す。図１において、２枚の圧電
体板１及び２は、それらの各主面にそれぞれ電極３及び
６、５及び７が被着され、シム材と呼称される板状部材
４を介して接着剤により接着され、積層されている。圧
電体板１及び２の材料として、一般にセラミックス材料
が用いられている。また、シム材４の材料としては、セ
ラミックスの熱膨張係数（２×１０-6／℃）よりも熱膨
張係数がかなり大きいチタン、ステンレス、りん青銅等
の金属（１×１０-5／℃）、又はカーボン繊維強化樹脂
（５×１０-5／℃：繊維方向，４×１０-5／℃：繊維方
向に垂直な方向）が用いられている。また、接着剤とし
ては導電性接着剤が用いられている。2. Description of the Related Art FIG. 1 shows the structure of a general conventional bimorph piezoelectric actuator. In FIG. 1, two piezoelectric plates 1 and 2 are provided with electrodes 3 and 6, 5 and 7 on their principal surfaces, respectively, and an adhesive is applied via a plate member 4 called a shim material. Are adhered by and laminated. Ceramic materials are generally used as materials for the piezoelectric plates 1 and 2. As the material of the shim material 4, a metal such as titanium, stainless steel, phosphor bronze (1 × 10 −5 / ° C.) having a thermal expansion coefficient much larger than that of ceramics (2 × 10 −6 / ° C.). Alternatively, a carbon fiber reinforced resin (5 × 10 −5 / ° C .: fiber direction, 4 × 10 −5 / ° C .: direction perpendicular to the fiber direction) is used. A conductive adhesive is used as the adhesive.
【０００３】上記構成において、両圧電体板１及び２の
各々対向電極３及び６、５及び７の間に電界を与えるこ
とにより、両圧電体１及び２の間に長さの差が生じる。
両圧電体１及び２の一端を機械的に固定することにより
他端が変位し、バイモルフ圧電アクチュエータとして機
能する。圧電体１及び２の伸縮変化が大きいほど、すな
わち、圧電体の性能を示す圧電定数が大きいほど変位量
は大きい。In the above structure, an electric field is applied between the opposing electrodes 3 and 6, 5 and 7 of the piezoelectric plates 1 and 2, respectively, so that a difference in length occurs between the piezoelectric plates 1 and 2.
By mechanically fixing one end of both piezoelectric bodies 1 and 2, the other end is displaced and functions as a bimorph piezoelectric actuator. The larger the expansion / contraction change of the piezoelectric bodies 1 and 2, that is, the larger the piezoelectric constant indicating the performance of the piezoelectric body, the larger the displacement amount.
【０００４】[0004]
【発明が解決しようとする課題】従来、バイモルフ圧電
アクチュエータに使われるセラミックスとしては、Ｐｂ
ＴｉxＺｒyＯ3などのセラミックス材料が用いられてき
た。これらのセラミックス材料は、一般に、圧電定数が
大きいものはキュリー温度が低い傾向にある。従って、
大振幅バイモルフ圧電アクチュエータを得るためには、
キュリー温度の低い材料を用いれば有利であることがわ
かる。Conventionally, as a ceramic used in a bimorph piezoelectric actuator, Pb has been used.
Ceramic materials such as Ti x Zr y O 3 have been used. Of these ceramic materials, generally, those having a large piezoelectric constant tend to have a low Curie temperature. Therefore,
To obtain a large amplitude bimorph piezoelectric actuator,
It turns out that it is advantageous to use a material having a low Curie temperature.
【０００５】一方、一般的に、圧電性を有する材料をキ
ュリー温度以上に加熱すると、その圧電性は消失する。
また、キュリー温度以下であっても、その温度附近に圧
電材料を加熱すると、分極状態が変化し、圧電性は小さ
くなる。圧電性を有する材料の製作プロセスにおいて、
材料に圧電性を付与するために、高電圧を印加する分極
作業が行われる。圧電セラミックスにおいて、そのキュ
リ−温度により、分極状態の変化のしやすさが当然異な
る。例えば、前述のＰｂＴｉxＺｒyＯ3などのセラミッ
クス材料の場合、キュリー点が２５０℃以上のものは、
分極処理温度を１００℃以上にしなければならない。と
ころが、キュリー点が１４０℃以下の材料の場合、キュ
リー温度が低い分だけキュリ−温度までのマージンが少
なく、分極状態が変化しやすい。On the other hand, generally, when a material having piezoelectricity is heated above the Curie temperature, the piezoelectricity disappears.
Further, even if the temperature is not higher than the Curie temperature, if the piezoelectric material is heated near that temperature, the polarization state changes, and the piezoelectricity decreases. In the process of manufacturing a material having piezoelectricity,
In order to impart piezoelectricity to the material, a polarization operation is performed in which a high voltage is applied. In the piezoelectric ceramic, the easiness of changing the polarization state naturally varies depending on the Curie temperature. For example, in the case of the above-mentioned ceramic material such as PbTi x Zr y O 3 , if the Curie point is 250 ° C. or higher,
The polarization treatment temperature must be 100 ° C. or higher. However, in the case of a material having a Curie point of 140 ° C. or less, the margin to the Curie temperature is small due to the low Curie temperature, and the polarization state is likely to change.
【０００６】そのため、キュリー点が１４０℃以下の圧
電材料を用いた場合、圧電定数が大きい反面、抗電場が
低く、温度安定性や経時変化に弱く、用途が限定される
という問題点を有していた。一方、キュリー点が１５０
℃以上のものを用いた場合、温度安定性や経時変化に強
い反面、圧電定数がせいぜい２００×１０-12ｍ／Ｖ程
度であり、あまり大きくなく、これら通常の圧電セラミ
ックスをそのまま用いたバイモルフ圧電アクチュエータ
では、形状が決められた範囲内ではそれほど大きな変位
量が得られないという問題点を有していた。Therefore, when a piezoelectric material having a Curie point of 140 ° C. or lower is used, the piezoelectric constant is large, but the coercive electric field is low, temperature stability and aging change are weak, and the application is limited. Was there. On the other hand, the Curie point is 150.
When a material having a temperature of ℃ or more is used, the piezoelectric constant is strong at 200 × 10 -12 m / V at the most, although it is strong against temperature stability and aging, and is not so large. The actuator has a problem that a large displacement cannot be obtained within a range where the shape is determined.
【０００７】本発明は以上のような従来の問題点を解決
するためになされたものであり、キュリー点が低い圧電
材料を用いて、安定して大振幅変位が得られるバイモル
フ圧電素子及びその製造方法を提供することを目的とし
ている。The present invention has been made in order to solve the above conventional problems, and uses a piezoelectric material having a low Curie point to stably obtain a large amplitude displacement and a bimorph piezoelectric element and its manufacture. It is intended to provide a way.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明のバイモルフ圧電素子は、室温において抗電
界より大きい電界を印加することにより分極処理が可能
なキューリー温度が２０℃から１４０℃の圧電セラミッ
クス板を張り合わせた後、駆動前に電界を一方向に印加
することにより分極処理を行うものである。In order to achieve the above object, the bimorph piezoelectric element of the present invention has a Curie temperature of 20 ° C. to 140 ° C. which enables polarization treatment by applying an electric field larger than the coercive electric field at room temperature. After the piezoelectric ceramic plates are bonded together, an electric field is applied in one direction before driving to perform polarization processing.
【０００９】また、本発明の別のバイモルフ圧電素子
は、一方の主面にそれぞれ電極が被覆された２枚の圧電
セラミックス板と、前記各圧電セラミックス板の他の主
面に挟まれて固着されたシム材とを具備し、前記シム材
はその熱膨張係数が前記圧電セラミックス板の熱膨張係
数に近似するインバー材である。Further, another bimorph piezoelectric element of the present invention is sandwiched and fixed between two piezoelectric ceramic plates each having one main surface coated with an electrode and the other main surface of each piezoelectric ceramic plate. The shim material is an invar material having a coefficient of thermal expansion close to that of the piezoelectric ceramic plate.
【００１０】また、本発明のさらに別のバイモルフ圧電
素子は、一方の主面にそれぞれ電極が被覆された２枚の
圧電セラミックス板と、前記各圧電セラミックス板の他
の主面に挟まれて固着されたシム材とを具備し、前記シ
ム材は第１の方向における熱膨張係数が前記第１方向に
直交する第２方向における熱膨張係数と異なる繊維強化
金属材である。Still another bimorph piezoelectric element of the present invention is sandwiched and fixed between two piezoelectric ceramic plates each having one main surface coated with an electrode and the other main surface of each piezoelectric ceramic plate. The shim material is a fiber reinforced metal material having a coefficient of thermal expansion in a first direction different from a coefficient of thermal expansion in a second direction orthogonal to the first direction.
【００１１】また、本発明のさらに別のバイモルフ圧電
素子は、一方の主面にそれぞれ電極が被覆された２枚の
圧電セラミックス板と、前記各圧電セラミックス板の他
の主面に挟まれて固着されたシム材とを具備し、前記シ
ム材は第１の方向における熱膨張係数が前記圧電セラミ
ックス板の熱膨張係数に近似し、かつ前記第１の方向に
直交する第２の方向における熱膨張係数が前記圧電セラ
ミックス板の熱膨張係数よりも大きい繊維強化インバー
材である。Still another bimorph piezoelectric element of the present invention is sandwiched and fixed between two piezoelectric ceramic plates each having one main surface coated with an electrode and the other main surface of each piezoelectric ceramic plate. And a thermal expansion coefficient of the shim material in a second direction which is close to the thermal expansion coefficient of the piezoelectric ceramic plate in the first direction and is orthogonal to the first direction. A fiber reinforced Invar material having a coefficient larger than the coefficient of thermal expansion of the piezoelectric ceramic plate.
【００１２】上記各構成において、前記圧電セラミック
ス板は抗電界より大きい電界を印加することにより室温
での分極処理が可能なキューリー温度が２０℃から１４
０℃の強誘電体であることが好ましい。また、前記圧電
セラミックス板はＰｂ（Ｎｉ1/3Ｎｂ2/3）AＴｉBＺｒC
Ｏ3（Ａ＋Ｂ＋Ｃ＝１）で表され、かつ、前記キュリ−
温度を有し、圧電定数が大きいものであることが好まし
い。また、前記圧電セラミックス板を張り合わせた後、
駆動の際に電界を一方向にのみ印加することにより分極
処理を行うことが好ましい。In each of the above-mentioned structures, the piezoelectric ceramic plate has a Curie temperature of 20 ° C. to 14 ° C. at which polarization treatment at room temperature is possible by applying an electric field larger than the coercive electric field.
It is preferably a 0 ° C. ferroelectric. The piezoelectric ceramic plate is made of Pb (Ni 1/3 Nb 2/3 ) A Ti B Zr C.
It is represented by O 3 (A + B + C = 1), and
It is preferable that the temperature is high and the piezoelectric constant is high. In addition, after pasting the piezoelectric ceramic plates,
It is preferable to perform the polarization treatment by applying an electric field only in one direction during driving.
【００１３】一方、本発明のバイモルフ圧電素子の製造
方法は、一方の主面にそれぞれ電極が被覆された２枚の
圧電セラミックス板と、前記各圧電セラミックス板の他
の主面に挟まれて固着されたシム材とを具備し、前記シ
ム材はその熱膨張係数が前記圧電セラミックス板の熱膨
張係数に近似するインバー材であるバイモルフ圧電素子
の製造方法であって、前記圧電セラミックス板と前記シ
ム材とを張り合わせる際に、圧電セラミックス板のキュ
リー温度以上の温度に加熱する。On the other hand, in the method for manufacturing a bimorph piezoelectric element of the present invention, two piezoelectric ceramic plates each having one main surface covered with an electrode and the other main surface of each piezoelectric ceramic plate are sandwiched and fixed. A method for manufacturing a bimorph piezoelectric element, wherein the shim material is an Invar material having a coefficient of thermal expansion close to that of the piezoelectric ceramic plate. When pasting the material, it is heated to a temperature above the Curie temperature of the piezoelectric ceramic plate.
【００１４】また、本発明の別のバイモルフ圧電素子の
製造方法は、一方の主面にそれぞれ電極が被覆された２
枚の圧電セラミックス板と、前記各圧電セラミックス板
の他の主面に挟まれて固着されたシム材とを具備し、前
記シム材は第１の方向における熱膨張係数が前記第１方
向に直交する第２方向における熱膨張係数と異なる繊維
強化金属材であるバイモルフ圧電素子の製造方法であっ
て、前記圧電セラミックス板と前記シム材とを張り合わ
せる際に、圧電セラミックス板のキュリー温度以上の温
度に加熱する。In another method of manufacturing a bimorph piezoelectric element of the present invention, one main surface is coated with electrodes, respectively.
The piezoelectric ceramic plate includes a single sheet, and a shim member sandwiched and fixed to the other main surface of each of the piezoelectric ceramic plates. The shim member has a coefficient of thermal expansion in a first direction orthogonal to the first direction. A method for manufacturing a bimorph piezoelectric element, which is a fiber-reinforced metal material having a coefficient of thermal expansion different from that in the second direction, wherein a temperature equal to or higher than the Curie temperature of the piezoelectric ceramic plate is applied when the piezoelectric ceramic plate and the shim material are bonded together. Heat to.
【００１５】また、本発明のさらに別のバイモルフ圧電
素子の製造方法は、一方の主面にそれぞれ電極が被覆さ
れた２枚の圧電セラミックス板と、前記各圧電セラミッ
クス板の他の主面に挟まれて固着されたシム材とを具備
し、前記シム材は第１の方向における熱膨張係数が前記
圧電セラミックス板の熱膨張係数に近似し、かつ前記第
１の方向に直交する第２の方向における熱膨張係数が前
記圧電セラミックス板の熱膨張係数よりも大きい繊維強
化インバー材であるバイモルフ圧電素子の製造方法であ
って、前記圧電セラミックス板と前記シム材とを張り合
わせる際に、圧電セラミックス板のキュリー温度以上の
温度に加熱する。Still another method of manufacturing a bimorph piezoelectric element according to the present invention is to sandwich a piezoelectric ceramic plate between two piezoelectric ceramic plates each having one main surface coated with an electrode and the other main surface of each piezoelectric ceramic plate. And a fixed shim material, the shim material having a thermal expansion coefficient in a first direction close to that of the piezoelectric ceramic plate, and a second direction orthogonal to the first direction. In the method of manufacturing a bimorph piezoelectric element, which is a fiber-reinforced Invar material having a thermal expansion coefficient larger than that of the piezoelectric ceramics plate, wherein the piezoelectric ceramics plate and the shim material are bonded together. Heat to a temperature above the Curie temperature of.
【００１６】上記各構成において、前記圧電セラミック
ス板と前記シム材とを加熱固着させる際に、前記圧電セ
ラミックス板の材料に分極処理が可能な電界を印加しつ
つ、室温まで冷却することが好ましい。または、前記圧
電セラミックス板と前記シム材とを加熱固着し、バイモ
ルフ圧電素子を冷却した後、前記圧電セラミックス板の
圧電性が消失する温度以上に再度加熱することが好まし
い。または、前記圧電セラミックス板と前記シム材とを
加熱固着し、バイモルフ圧電素子を冷却した後、前記圧
電セラミックス板の圧電性が消失する温度以上に再度加
熱し、前記圧電セラミックス板の材料に分極処理が可能
な電界を印加しつつ、室温まで冷却することが好まし
い。In each of the above-mentioned configurations, when the piezoelectric ceramic plate and the shim member are heated and fixed to each other, it is preferable that the piezoelectric ceramic plate is cooled to room temperature while applying an electric field capable of polarization treatment to the material. Alternatively, it is preferable that the piezoelectric ceramic plate and the shim material are fixed by heating, the bimorph piezoelectric element is cooled, and then the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity disappears or higher. Alternatively, the piezoelectric ceramic plate and the shim material are heated and fixed, and after cooling the bimorph piezoelectric element, the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity of the piezoelectric ceramic plate disappears, and the piezoelectric ceramic plate material is polarized. It is preferable to cool to room temperature while applying an electric field capable of
【００１７】[0017]
【作用】以上のように構成された本発明のバイモルフ圧
電素子によれば、圧電セラミックス板として電界を印加
することにより室温での分極処理が可能なキューリー温
度が２０℃から１４０℃の強誘電体を用い、駆動の際に
電界を一方向に印加して分極処理を駆動と同時に行うの
で、圧電セラミックス板の接合前にあらかじめ分極処理
を行う必要がなく、または一旦処理された分極が消滅し
てもよいので、加熱硬化時に圧電セラミックス板のキュ
リー温度以上の温度に加熱することができる。According to the bimorph piezoelectric element of the present invention configured as described above, a ferroelectric substance having a Curie temperature of 20 ° C. to 140 ° C. that enables polarization treatment at room temperature by applying an electric field as a piezoelectric ceramic plate. , The electric field is applied in one direction at the time of driving, and the polarization process is performed at the same time as the driving. Therefore, it is not necessary to perform the polarization process in advance before joining the piezoelectric ceramic plates, or the processed polarization disappears. Since it is good, the piezoelectric ceramic plate can be heated to a temperature equal to or higher than the Curie temperature of the piezoelectric ceramic plate during curing.
【００１８】また、本発明の別のバイモルフ圧電素子に
よれば、シム材の熱膨張係数を圧電セラミックス板の熱
膨張係数に近似させたので、等方性のシム材において、
加熱硬化の際の熱膨張差に応じて変位量の大きなバイモ
ルフ圧電素子を得ることができる。According to another bimorph piezoelectric element of the present invention, the coefficient of thermal expansion of the shim material is approximated to the coefficient of thermal expansion of the piezoelectric ceramic plate.
It is possible to obtain a bimorph piezoelectric element having a large amount of displacement according to the difference in thermal expansion during heat curing.
【００１９】また、本発明のさらに別のバイモルフ圧電
素子によれば、シム材の第１の方向における熱膨張係数
を第１方向に直交する第２方向における熱膨張係数と異
なるので、異方性のシム材において、変位に関係ない方
向にはその効果として阻害の方向に働き、変位に関係す
る方向に関してはその効果が顕著であるように変位量が
大きなバイモルフ素子を得ることができる。Further, according to still another bimorph piezoelectric element of the present invention, the coefficient of thermal expansion of the shim material in the first direction is different from the coefficient of thermal expansion in the second direction orthogonal to the first direction. In the shim material, it is possible to obtain a bimorph element having a large displacement amount such that the effect acts in the inhibition direction in the direction unrelated to the displacement and the effect is remarkable in the direction related to the displacement.
【００２０】また、本発明のさらに別のバイモルフ圧電
素子によれば、シム材の第１の方向における熱膨張係数
が前記圧電セラミックス板の熱膨張係数に近似し、かつ
第１の方向に直交する第２の方向における熱膨張係数が
圧電セラミックス板の熱膨張係数よりも大きいので、等
方性のシム材において、加熱硬化の際の熱膨張差に応じ
て変位量のより大きなバイモルフ圧電素子を製造するこ
とができ、また異方性のシム材において、変位に関係な
い方向にはその効果として阻害の方向に働き、変位に関
係する方向に関してはその効果が顕著であるため変位量
がさらに大きなバイモルフ素子を得ることができる。According to still another bimorph piezoelectric element of the present invention, the coefficient of thermal expansion of the shim material in the first direction is close to the coefficient of thermal expansion of the piezoelectric ceramic plate, and is orthogonal to the first direction. Since the coefficient of thermal expansion in the second direction is larger than the coefficient of thermal expansion of the piezoelectric ceramic plate, it is possible to manufacture a bimorph piezoelectric element having a larger displacement amount according to the difference in thermal expansion during heat curing in an isotropic shim material. In an anisotropic shim material, the effect acts in the direction of inhibition in the direction unrelated to the displacement, and the effect is remarkable in the direction related to the displacement. An element can be obtained.
【００２１】また、圧電セラミックス板は電界を印加す
ることにより室温での分極が可能なキューリー温度が２
０℃から１４０℃の強誘電体とし、また、Ｐｂ（Ｎｉ
1/3Ｎｂ2/3）AＴｉBＺｒCＯ3（Ａ＋Ｂ＋Ｃ＝１）で表さ
れたものとすることにより、変位量（振幅）の大きなバ
イモルフ圧電素子を得ることができる。また、圧電セラ
ミックス板を張り合わせた後、駆動の際に電界を一方向
に印加することにより、容易に分極処理を行うことがで
きる。The piezoelectric ceramic plate has a Curie temperature of 2 at which it can be polarized at room temperature by applying an electric field.
Ferroelectric from 0 ℃ to 140 ℃, Pb (Ni
By using 1/3 Nb 2/3 ) A Ti B Zr C O 3 (A + B + C = 1), a bimorph piezoelectric element having a large displacement amount (amplitude) can be obtained. Moreover, after the piezoelectric ceramic plates are bonded together, an electric field is applied in one direction during driving, whereby the polarization treatment can be easily performed.
【００２２】一方、本発明のバイモルフ圧電素子の製造
方法によれば、シム材として熱膨張係数が圧電セラミッ
クス板の熱膨張係数に近似するインバー材を用い、圧電
セラミックス板とシム材とを張り合わせる際に、圧電セ
ラミックス板のキュリー温度以上の温度に加熱するの
で、圧電セラミックスの分極状態を未分極状態にでき、
かつ、等方性のシム材において、加熱硬化の際の熱膨張
差に応じて変位量の大きなバイモルフ圧電素子を得るこ
とができる。On the other hand, according to the method for manufacturing a bimorph piezoelectric element of the present invention, an invar material having a thermal expansion coefficient close to that of a piezoelectric ceramics plate is used as the shim material, and the piezoelectric ceramics plate and the shim material are bonded together. At that time, since the piezoelectric ceramic plate is heated to a temperature above the Curie temperature, the polarized state of the piezoelectric ceramic can be changed to an unpolarized state,
In addition, in the isotropic shim material, it is possible to obtain a bimorph piezoelectric element having a large displacement amount according to the difference in thermal expansion during heat curing.
【００２３】また、本発明の別のバイモルフ圧電素子の
製造方法によれば、シム材として、第１の方向における
熱膨張係数が前記第１方向に直交する第２方向における
熱膨張係数と異なる繊維強化金属材を用い、圧電セラミ
ックス板とシム材とを張り合わせる際に、圧電セラミッ
クス板のキュリー温度以上の温度に加熱するので、圧電
セラミックスを未分極状態にでき、かつ、異方性のシム
材において、変位に関係ない方向にはその効果として阻
害の方向に働き、変位に関係する方向に関してはその効
果が顕著であるように変位量が大きなバイモルフ素子を
得ることができる。According to another method for manufacturing a bimorph piezoelectric element of the present invention, as the shim material, a fiber having a coefficient of thermal expansion in the first direction different from that in the second direction orthogonal to the first direction. When the piezoelectric ceramic plate and the shim material are bonded together by using a reinforced metal material, the piezoelectric ceramic plate is heated to a temperature not lower than the Curie temperature of the piezoelectric ceramic plate, so that the piezoelectric ceramic can be in an unpolarized state and is an anisotropic shim material. In the above, it is possible to obtain a bimorph element having a large displacement amount such that the effect acts in the direction of inhibition in the direction unrelated to the displacement and the effect is remarkable in the direction related to the displacement.
【００２４】また、本発明のさらに別のバイモルフ圧電
素子の製造方法によれば、シム材として、第１の方向に
おける熱膨張係数が前記圧電セラミックス板の熱膨張係
数に近似し、かつ前記第１の方向に直交する第２の方向
における熱膨張係数が前記圧電セラミックス板の熱膨張
係数よりも大きい繊維強化インバー材を用い、圧電セラ
ミックス板とシム材とを張り合わせる際に、圧電セラミ
ックス板のキュリー温度以上の温度に加熱するので、圧
電セラミックスを未分極状態にでき、かつ、等方性のシ
ム材において、加熱硬化の際の熱膨張差に応じて変位量
のより大きなバイモルフ圧電素子を製造することがで
き、また異方性のシム材において、変位に関係ない方向
にはその効果として阻害の方向に働き、変位に関係する
方向に関してはその効果が顕著であるため変位量がさら
に大きなバイモルフ素子を得ることができる。According to still another method for manufacturing a bimorph piezoelectric element of the present invention, as the shim material, the coefficient of thermal expansion in the first direction is close to the coefficient of thermal expansion of the piezoelectric ceramic plate, and When a piezoelectric ceramic plate and a shim member are attached to each other by using a fiber reinforced Invar material having a coefficient of thermal expansion in a second direction orthogonal to the direction of Since it is heated to a temperature equal to or higher than the temperature, the piezoelectric ceramic can be in a non-polarized state, and in the isotropic shim material, a bimorph piezoelectric element having a larger displacement amount according to the difference in thermal expansion during heat curing is manufactured. In an anisotropic shim material, it works as a hindrance in the direction unrelated to displacement, and its effect in the direction unrelated to displacement. Results can be obtained a large bimorph element displacement is further because it is pronounced.
【００２５】また、圧電セラミックス板とシム材とを加
熱固着させる際に、圧電セラミックス板の材料に分極処
理が可能な電界を印加しつつ、室温まで冷却することに
より、圧電セラミックス板を高温で分極処理する効果が
得られ、安定性のよいバイモルフ圧電素子が得られる。Further, when the piezoelectric ceramic plate and the shim material are heated and fixed to each other, the piezoelectric ceramic plate is polarized at a high temperature by cooling it to room temperature while applying an electric field capable of polarization treatment to the material of the piezoelectric ceramic plate. A treatment effect is obtained, and a stable bimorph piezoelectric element is obtained.
【００２６】または、圧電セラミックス板とシム材とを
加熱固着し、バイモルフ圧電素子を冷却した後、圧電セ
ラミックス板の圧電性が消失する温度以上に再度加熱す
ることにより、長時間駆動するうちに性能が劣化して
も、その都度特性を回復させることができる。Alternatively, the piezoelectric ceramic plate and the shim material are heated and fixed, the bimorph piezoelectric element is cooled, and then the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity of the piezoelectric ceramic plate disappears. Even if is deteriorated, the characteristics can be restored each time.
【００２７】または、圧電セラミックス板とシム材とを
加熱固着し、バイモルフ圧電素子を冷却した後、圧電セ
ラミックス板の圧電性が消失する温度以上に再度加熱
し、圧電セラミックス板の材料に分極処理が可能な電界
を印加しつつ、室温まで冷却することにより、圧電セラ
ミックス板を高温で分極処理する効果及び劣化した性能
を回復する効果が得られ、長期間にわたって安定して作
動するバイモルフ圧電素子が得られる。Alternatively, the piezoelectric ceramic plate and the shim material are heated and fixed, the bimorph piezoelectric element is cooled, and then the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity of the piezoelectric ceramic plate disappears. By cooling to room temperature while applying a possible electric field, the effect of polarization treatment of the piezoelectric ceramic plate at high temperature and the effect of recovering degraded performance can be obtained, and a bimorph piezoelectric element that operates stably for a long period of time can be obtained. To be
【００２８】[0028]
【実施例】以下に本発明のバイモルフ圧電素子及びその
製造方法の一実施例を説明する。なお、本発明のバイモ
ルフ圧電素子の基本構成は図１に示した従来例と同様
に、２枚の圧電セラミックス板１及び２と、それらの各
主面にそれぞれ被着された電極３及び６、５及び７と、
シム材４とが接着剤により接着され、積層されている。EXAMPLE An example of a bimorph piezoelectric element and a method for manufacturing the same according to the present invention will be described below. The basic configuration of the bimorph piezoelectric element of the present invention is the same as in the conventional example shown in FIG. 1, two piezoelectric ceramic plates 1 and 2, and electrodes 3 and 6 attached to their respective principal surfaces, 5 and 7,
The shim member 4 and the shim member 4 are adhered with an adhesive and laminated.
【００２９】圧電セラミックス板１及び２の材料とし
て、Ｐｂ（Ｎｉ1/3Ｎｂ2/3）AＴｉBＺｒCＯ3（Ａ＋Ｂ＋
Ｃ＝１）で表され、電界を印加することにより室温での
分極処理が可能であり、かつキューリー温度が２０℃か
ら１４０℃の強誘電体である圧電セラミックスをいくつ
か用いた。これらの線膨脹率は２×１０-6／℃である。
本実施例では、特に顕著であったキュリ−温度が１２０
℃のものについて記載する。これを０．２ｍｍの厚さに
研磨した後、Ｃｒ−Ａｕ蒸着を順に施し電極３及び５を
形成した。２枚の圧電セラミックス板１及び２の張合わ
せ前の時点では、分極処理は行わなかった。As a material for the piezoelectric ceramic plates 1 and 2, Pb (Ni 1/3 Nb 2/3 ) A Ti B Zr C O 3 (A + B +
C = 1), which is capable of polarization treatment at room temperature by applying an electric field, and uses some piezoelectric ceramics which are ferroelectrics with a Curie temperature of 20 ° C. to 140 ° C. The linear expansion coefficient of these is 2 × 10 −6 / ° C.
In this example, the Curie temperature, which was particularly remarkable, was 120.
Describe the one for ° C. After polishing this to a thickness of 0.2 mm, Cr-Au vapor deposition was sequentially applied to form electrodes 3 and 5. No polarization treatment was performed before the two piezoelectric ceramic plates 1 and 2 were bonded together.
【００３０】シム材４としては、炭素繊維とインバ−板
の積層材である炭素繊維強化インバー材を用い、繊維方
向の熱膨脹率を１×１０-6／℃とした。このシム材４を
介して２枚の圧電セラミックス板を接着剤を用いて固着
させた。接着剤の硬化温度としては、それぞれ従来例で
ある室温及び１３０℃と、本発明による１８０℃の３通
りの温度を設定し、それぞれ硬化時間を２時間とした。
その後分極処理を行いバイモルフ素子を作製した。接着
剤としては、硬化温度がそれぞれ室温及び８０℃であ
り、硬化後の硬度がほぼ等しいものを用いた。バイモル
フ圧電素子の大きさとしては、４ｍｍ×２０ｍｍとし、
バイモルフ圧電素子の有効長を１５ｍｍとした。なお、
シム材４としては、低熱膨脹率のものや熱膨脹率に異方
性を持たせたものを用いた場合も同様の効果が得られる
と考えられる。As the shim material 4, a carbon fiber reinforced Invar material, which is a laminated material of carbon fiber and an inver plate, was used, and the coefficient of thermal expansion in the fiber direction was 1 × 10 -6 / ° C. Two piezoelectric ceramic plates were fixed to each other via an adhesive agent using this shim material 4. As the curing temperature of the adhesive, three kinds of temperatures of room temperature and 130 ° C., which are conventional examples, and 180 ° C. according to the present invention were set, and the curing time was 2 hours.
Then, polarization treatment was performed to produce a bimorph element. As the adhesives, those having a curing temperature of room temperature and 80 ° C. and hardnesses of approximately the same after curing were used. The size of the bimorph piezoelectric element is 4 mm × 20 mm,
The effective length of the bimorph piezoelectric element was set to 15 mm. In addition,
It is considered that the same effect can be obtained when the shim material 4 having a low coefficient of thermal expansion or a material having anisotropy in the coefficient of thermal expansion is used.
【００３１】バイモルフ圧電素子の駆動時において、分
極方向のプラス側をシム側（電極６及び７が形成されて
いる側）とし、駆動の際分極方向の正の方向には３５０
Ｖまで電圧を印加し、負方向には電界を印加しないよう
に電圧を制御した。この素子について、ピーク間電圧が
７００Ｖの電圧を印加し、その際の変位振幅をレーザ式
変位計を用いて測定した。また、一定時間駆動させ、特
性が劣化したバイモルフ圧電素子を１５０℃で２時間加
熱し、冷却後再度分極し、再び変位振幅を測定した。そ
れらの振幅特性を図２に示す。When the bimorph piezoelectric element is driven, the positive side of the polarization direction is the shim side (the side on which the electrodes 6 and 7 are formed), and the positive side of the polarization direction is 350 when driving.
The voltage was applied up to V, and the voltage was controlled so that the electric field was not applied in the negative direction. A voltage having a peak-to-peak voltage of 700 V was applied to this device, and the displacement amplitude at that time was measured using a laser displacement meter. In addition, the bimorph piezoelectric element whose characteristics were deteriorated was driven for a certain period of time, heated at 150 ° C. for 2 hours, cooled and then repolarized, and the displacement amplitude was measured again. Their amplitude characteristics are shown in FIG.
【００３２】図２において、曲線Ａは、接着剤を室温で
硬化させた従来のバイモルフ圧電素子の、駆動時間１０
００時間経過後における印加電圧と振幅の関係を示す。
曲線Ｂは、接着剤を室温で硬化させた従来のバイモルフ
圧電素子の、駆動初期状態における印加電圧と振幅の関
係を示す。曲線Ｃは、接着剤を室温で硬化させた従来の
バイモルフ圧電素子を１０００時間駆動させ、特性が劣
化したものを１５０℃で２時間加熱し、冷却後再度分極
た後における印加電圧と振幅の関係を示す。曲線Ｄは、
接着剤を１８０℃で硬化させた本発明のバイモルフ圧電
素子の、駆動時間１０００時間経過後における印加電圧
と振幅の関係を示す。曲線Ｅは、接着剤を１３０℃で硬
化させた従来のバイモルフ圧電素子の、駆動初期状態に
おける印加電圧と振幅の関係を示す。曲線Ｆは、接着剤
を１８０℃で硬化させた本発明のバイモルフ圧電素子
の、駆動初期状態における印加電圧と振幅の関係を示
す。曲線Ｇは、接着剤を１８０℃で硬化させた本発明の
バイモルフ圧電素子を１０００時間駆動させ、特性が劣
化したものを１５０℃で２時間加熱し、冷却後再度分極
た後における印加電圧と振幅の関係を示す。In FIG. 2, a curve A indicates a driving time of 10 for a conventional bimorph piezoelectric element in which an adhesive is cured at room temperature.
The relationship between the applied voltage and the amplitude after the lapse of 00 hours is shown.
A curve B shows the relationship between the applied voltage and the amplitude in the initial driving state of the conventional bimorph piezoelectric element in which the adhesive is cured at room temperature. The curve C shows the relationship between the applied voltage and the amplitude after the conventional bimorph piezoelectric element in which the adhesive is cured at room temperature is driven for 1000 hours, the one whose characteristics have deteriorated is heated at 150 ° C. for 2 hours, and after cooling and repolarization. Indicates. Curve D is
The relationship between the applied voltage and the amplitude of the bimorph piezoelectric element of the present invention in which the adhesive is cured at 180 ° C. after a driving time of 1000 hours is shown. A curve E shows the relationship between the applied voltage and the amplitude in the initial driving state of the conventional bimorph piezoelectric element in which the adhesive is cured at 130 ° C. A curve F shows the relationship between the applied voltage and the amplitude in the initial driving state of the bimorph piezoelectric element of the present invention in which the adhesive is cured at 180 ° C. The curve G shows the applied voltage and amplitude after the bimorph piezoelectric element of the present invention in which the adhesive is cured at 180 ° C. is driven for 1000 hours, the one whose characteristics have deteriorated is heated at 150 ° C. for 2 hours, and after cooling and repolarization. Shows the relationship.
【００３３】図２から明らかなように、本発明によるバ
イモルフ圧電素子は、従来の硬化温度の素子と比べ、素
子の振幅特性に関して顕著な向上が見られた。As is apparent from FIG. 2, the bimorph piezoelectric element according to the present invention showed a remarkable improvement in the amplitude characteristic of the element as compared with the element having the conventional curing temperature.
【００３４】[0034]
【発明の効果】以上のように、本発明のバイモルフ圧電
素子によれば、圧電セラミックス板として電界を印加す
ることにより室温での分極処理が可能なキューリー温度
が２０℃から１４０℃の強誘電体を用い、駆動前に電界
を一方向に印加して分極処理を行うので、圧電セラミッ
クス板の接合前にあらかじめ分極処理を行う必要がな
く、または一旦処理された分極が消滅してもよいので、
加熱硬化時に圧電セラミックス板のキュリー温度以上の
温度に加熱することができる。その結果、圧電セラミッ
クス板に働く引っ張り応力が小さくなり、分極状態の変
化が妨げられ、圧電定数が大きく維持され、変位振幅が
大きいバイモルフ圧電素子が得られる。As described above, according to the bimorph piezoelectric element of the present invention, a ferroelectric substance having a Curie temperature of 20 ° C. to 140 ° C. that enables polarization treatment at room temperature by applying an electric field as a piezoelectric ceramic plate. Since the polarization treatment is performed by applying an electric field in one direction before driving, it is not necessary to perform the polarization treatment before joining the piezoelectric ceramic plates, or the polarization once processed may disappear.
It can be heated to a temperature not lower than the Curie temperature of the piezoelectric ceramics plate during heat curing. As a result, the tensile stress acting on the piezoelectric ceramics plate is reduced, the change of the polarization state is prevented, the piezoelectric constant is maintained large, and a bimorph piezoelectric element having a large displacement amplitude is obtained.
【００３５】また、本発明の別のバイモルフ圧電素子に
よれば、シム材の熱膨張係数を圧電セラミックス板の熱
膨張係数に近似させたので、等方性のシム材において、
加熱硬化の際の熱膨張差に応じて変位量の大きなバイモ
ルフ圧電素子を得ることができる。According to another bimorph piezoelectric element of the present invention, the coefficient of thermal expansion of the shim material is approximated to the coefficient of thermal expansion of the piezoelectric ceramic plate.
It is possible to obtain a bimorph piezoelectric element having a large amount of displacement according to the difference in thermal expansion during heat curing.
【００３６】また、本発明のさらに別のバイモルフ圧電
素子によれば、シム材の第１の方向における熱膨張係数
を第１方向に直交する第２方向における熱膨張係数と異
なるので、異方性のシム材において、変位に関係ない方
向にはその効果として阻害の方向に働き、変位に関係す
る方向に関してはその効果が顕著であるように変位量が
大きなバイモルフ素子を得ることができる。Further, according to still another bimorph piezoelectric element of the present invention, the coefficient of thermal expansion of the shim material in the first direction is different from the coefficient of thermal expansion in the second direction orthogonal to the first direction. In the shim material, it is possible to obtain a bimorph element having a large displacement amount such that the effect acts in the inhibition direction in the direction unrelated to the displacement and the effect is remarkable in the direction related to the displacement.
【００３７】また、本発明のさらに別のバイモルフ圧電
素子によれば、シム材の第１の方向における熱膨張係数
が前記圧電セラミックス板の熱膨張係数に近似し、かつ
第１の方向に直交する第２の方向における熱膨張係数が
圧電セラミックス板の熱膨張係数よりも大きいので、等
方性のシム材において、加熱硬化の際の熱膨張差に応じ
て変位量のよりも大きなバイモルフ圧電素子を製造する
ことができ、また異方性のシム材において、変位に関係
ない方向にはその効果として阻害する方向に働き、変位
に関係する方向に関してはその効果が顕著であるため変
位量がさらに大きなバイモルフ素子を得ることができ
る。According to still another bimorph piezoelectric element of the present invention, the coefficient of thermal expansion of the shim material in the first direction is close to the coefficient of thermal expansion of the piezoelectric ceramic plate and is orthogonal to the first direction. Since the coefficient of thermal expansion in the second direction is larger than the coefficient of thermal expansion of the piezoelectric ceramic plate, in a isotropic shim material, a bimorph piezoelectric element having a larger displacement amount according to the difference in thermal expansion during heat curing is used. In an anisotropic shim material that can be manufactured, it works in a direction that hinders the effect in the direction unrelated to the displacement, and the effect is remarkable in the direction related to the displacement. A bimorph element can be obtained.
【００３８】また、圧電セラミックス板は電界を印加す
ることにより室温での分極が可能なキューリー温度が２
０℃から１４０℃の強誘電体とし、また、Ｐｂ（Ｎｉ
1/3Ｎｂ2/3）AＴｉBＺｒCＯ3（Ａ＋Ｂ＋Ｃ＝１）で表さ
れたものとすることにより、変位量（振幅）の大きなバ
イモルフ圧電素子を得ることができる。また、圧電セラ
ミックス板を張り合わせた後、駆動前に電界を一方向に
印加することにより、分極処理を行うことができる。Further, the piezoelectric ceramic plate has a Curie temperature of 2 at which it can be polarized at room temperature by applying an electric field.
Ferroelectric from 0 ℃ to 140 ℃, Pb (Ni
By using 1/3 Nb 2/3 ) A Ti B Zr C O 3 (A + B + C = 1), a bimorph piezoelectric element having a large displacement amount (amplitude) can be obtained. Further, after the piezoelectric ceramic plates are bonded together, an electric field is applied in one direction before driving, whereby polarization processing can be performed.
【００３９】一方、本発明のバイモルフ圧電素子の製造
方法によれば、シム材として熱膨張係数が圧電セラミッ
クス板の熱膨張係数に近似するインバー材を用い、圧電
セラミックス板とシム材とを張り合わせる際に、圧電セ
ラミックス板のキュリー温度以上の温度に加熱するの
で、等方性のシム材において、加熱硬化の際の熱膨張差
に応じて変位量の大きなバイモルフ圧電素子を得ること
ができる。On the other hand, according to the method for manufacturing a bimorph piezoelectric element of the present invention, an invar material having a thermal expansion coefficient close to that of the piezoelectric ceramics plate is used as the shim material, and the piezoelectric ceramics plate and the shim material are bonded together. At this time, since the piezoelectric ceramic plate is heated to a temperature equal to or higher than the Curie temperature, a bimorph piezoelectric element having a large amount of displacement can be obtained in the isotropic shim material according to the difference in thermal expansion during heat curing.
【００４０】また、本発明の別のバイモルフ圧電素子の
製造方法によれば、シム材として、第１の方向における
熱膨張係数が前記第１方向に直交する第２方向における
熱膨張係数と異なる繊維強化金属材を用い、圧電セラミ
ックス板とシム材とを張り合わせる際に、圧電セラミッ
クス板のキュリー温度以上の温度に加熱するので、異方
性のシム材において、変位に関係ない方向にはその効果
として阻害する方向に働き、変位に関係する方向に関し
てはその効果が顕著であるように変位量が大きなバイモ
ルフ素子を得ることができる。Further, according to another method for manufacturing a bimorph piezoelectric element of the present invention, as the shim material, a fiber whose coefficient of thermal expansion in the first direction is different from that in the second direction orthogonal to the first direction. When a piezoelectric ceramic plate and a shim material are bonded together by using a reinforced metal material, the piezoelectric ceramic plate is heated to a temperature not lower than the Curie temperature of the piezoelectric ceramic plate. As a result, a bimorph element having a large displacement amount can be obtained so that the effect is remarkable in the direction related to the displacement.
【００４１】また、本発明のさらに別のバイモルフ圧電
素子の製造方法によれば、シム材として、第１の方向に
おける熱膨張係数が前記圧電セラミックス板の熱膨張係
数に近似し、かつ前記第１の方向に直交する第２の方向
における熱膨張係数が前記圧電セラミックス板の熱膨張
係数よりも大きい繊維強化インバー材を用い、圧電セラ
ミックス板とシム材とを張り合わせる際に、圧電セラミ
ックス板のキュリー温度以上の温度に加熱するので、等
方性のシム材において、加熱硬化の際の熱膨張差に応じ
て変位量のよりも大きなバイモルフ圧電素子を製造する
ことができ、また異方性のシム材において、変位に関係
ない方向にはその効果として阻害する方向に働き、変位
に関係する方向に関してはその効果が顕著であるため変
位量がさらに大きなバイモルフ素子を得ることができ
る。According to still another method for manufacturing a bimorph piezoelectric element of the present invention, as the shim material, the coefficient of thermal expansion in the first direction is close to the coefficient of thermal expansion of the piezoelectric ceramic plate, and When a piezoelectric ceramic plate and a shim member are attached to each other by using a fiber reinforced Invar material having a coefficient of thermal expansion in a second direction orthogonal to the direction of Since it is heated to a temperature equal to or higher than the temperature, it is possible to manufacture a bimorph piezoelectric element having an isotropic shim material which has a larger displacement amount in accordance with the difference in thermal expansion at the time of heating and curing. In the material, the effect acts in the direction that is not related to the displacement in the direction that inhibits it, and the effect is remarkable in the direction related to the displacement, so the displacement amount is larger It can be obtained bimorph element.
【００４２】また、圧電セラミックス板とシム材とを加
熱固着させる際に、圧電セラミックス板の材料に分極処
理が可能な電界を印加しつつ、室温まで冷却することに
より、圧電セラミックス板を高温で分極処理する効果が
得られ、安定性のよいバイモルフ圧電素子が得られる。When the piezoelectric ceramic plate and the shim material are heated and fixed to each other, the piezoelectric ceramic plate is polarized at a high temperature by cooling to room temperature while applying an electric field capable of polarization treatment to the material of the piezoelectric ceramic plate. A treatment effect is obtained, and a stable bimorph piezoelectric element is obtained.
【００４３】または、圧電セラミックス板とシム材とを
加熱固着し、バイモルフ圧電素子を冷却した後、圧電セ
ラミックス板の圧電性が消失する温度以上に再度加熱す
ることにより、長時間駆動するうちに性能が劣化して
も、その都度特性を回復させることができる。Alternatively, the piezoelectric ceramic plate and the shim member are heated and fixed, the bimorph piezoelectric element is cooled, and then heated again to a temperature at which the piezoelectricity of the piezoelectric ceramic plate disappears or higher, so that the performance is improved during long-time driving. Even if is deteriorated, the characteristics can be restored each time.
【００４４】または、圧電セラミックス板とシム材とを
加熱固着し、バイモルフ圧電素子を冷却した後、圧電セ
ラミックス板の圧電性が消失する温度以上に再度加熱
し、圧電セラミックス板の材料に分極処理が可能な電界
を印加しつつ、室温まで冷却することにより、圧電セラ
ミックス板を高温で分極処理する効果及び劣化した性能
を回復する効果が得られ、長期間にわたって安定して作
動するバイモルフ圧電素子が得られる。Alternatively, the piezoelectric ceramic plate and the shim material are fixed by heating, the bimorph piezoelectric element is cooled, and then the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity of the piezoelectric ceramic plate disappears. By cooling to room temperature while applying a possible electric field, the effect of polarization treatment of the piezoelectric ceramic plate at high temperature and the effect of recovering degraded performance can be obtained, and a bimorph piezoelectric element that operates stably for a long period of time can be obtained. To be
【図１】一般的なバイモルフ圧電素子の構成を示す断面
図FIG. 1 is a cross-sectional view showing the configuration of a general bimorph piezoelectric element.
【図２】本発明及び従来例によるバイモルフ圧電素子の
振幅特性を示す図FIG. 2 is a diagram showing amplitude characteristics of a bimorph piezoelectric element according to the present invention and a conventional example.
１：圧電セラミックス板 ２：圧電セラミックス板 ３：電極 ４：シム材 ５：電極 ６：電極 ７：電極 1: Piezoelectric ceramic plate 2: Piezoelectric ceramic plate 3: Electrode 4: Shim material 5: Electrode 6: Electrode 7: Electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 河島 俊一郎 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (72)発明者 釘宮 公一 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 平３−76175（ＪＰ，Ａ) 特開 昭61−177785（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 41/09 H01L 41/22 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shunichiro Kawashima 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Koichi Kugimiya 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co. In-house (56) Reference JP-A-3-76175 (JP, A) JP-A-61-177785 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 41/09 H01L 41/22
Claims (13)
加することにより分極処理が可能なキューリー温度が２
０℃から１４０℃の圧電セラミックス板を張り合わせた
後、駆動前に電界を一方向に印加することにより分極処
理を行うバイモルフ圧電素子。1. A Curie temperature at which polarization treatment is possible by applying an electric field larger than a coercive electric field at room temperature is 2
A bimorph piezoelectric element that performs polarization processing by applying an electric field in one direction before driving after bonding piezoelectric ceramic plates at 0 ° C to 140 ° C.
２枚の圧電セラミックス板と、前記各圧電セラミックス
板の他の主面に挟まれて固着されたシム材とを具備し、
前記圧電セラミックス板は抗電界より大きい電界を印加
することにより室温での分極処理が可能なキューリー温
度が２０℃から１４０℃の強誘電体であり、前記シム材
はその熱膨張係数が前記圧電セラミックス板の熱膨張係
数に近似するインバー材であるバイモルフ圧電素子。2. A piezoelectric ceramic plate, one main surface of which is coated with electrodes, and a shim member sandwiched and fixed to the other main surface of each piezoelectric ceramic plate.
The piezoelectric ceramic plate applies an electric field larger than the coercive electric field
Curie temperature that allows polarization treatment at room temperature
A bimorph piezoelectric element , which is a ferroelectric substance having a temperature of 20 ° C. to 140 ° C., and the shim material is an Invar material whose thermal expansion coefficient is close to that of the piezoelectric ceramic plate.
２枚の圧電セラミックス板と、前記各圧電セラミックス
板の他の主面に挟まれて固着されたシム材とを具備し、
前記シム材は第１の方向における熱膨張係数が前記第１
方向に直交する第２方向における熱膨張係数と異なる繊
維強化金属材であるバイモルフ圧電素子。3. Two piezoelectric ceramic plates each having one main surface coated with an electrode, and a shim member sandwiched and fixed to the other main surface of each piezoelectric ceramic plate,
The shim material has a coefficient of thermal expansion in the first direction that is the first
A bimorph piezoelectric element which is a fiber-reinforced metal material having a coefficient of thermal expansion different from that in a second direction orthogonal to the direction.
２枚の圧電セラミックス板と、前記各圧電セラミックス
板の他の主面に挟まれて固着されたシム材とを具備し、
前記シム材は第１の方向における熱膨張係数が前記圧電
セラミックス板の熱膨張係数に近似し、かつ前記第１の
方向に直交する第２の方向における熱膨張係数が前記圧
電セラミックス板の熱膨張係数よりも大きい繊維強化イ
ンバー材であるバイモルフ圧電素子。4. A piezoceramic plate, one main surface of which is coated with electrodes, and a shim member sandwiched and fixed to the other main surface of each piezoceramic plate.
The coefficient of thermal expansion of the shim material in the first direction is close to that of the piezoelectric ceramic plate, and the coefficient of thermal expansion in the second direction orthogonal to the first direction is the thermal expansion of the piezoelectric ceramic plate. A bimorph piezoelectric element that is a fiber-reinforced Invar material with a coefficient larger than that.
きい電界を印加することにより室温での分極処理が可能
なキューリー温度が２０℃から１４０℃の強誘電体であ
る請求項３又は４に記載のバイモルフ圧電素子。5. The piezoelectric ceramic plate according to claim 3, which is a ferroelectric substance having a Curie temperature of 20 ° C. to 140 ° C. and capable of being polarized at room temperature by applying an electric field larger than a coercive electric field. Bimorph piezoelectric element.
1/3Ｎｂ2/3）AＴｉBＺｒCＯ3（Ａ＋Ｂ＋Ｃ＝１）で表さ
れたものである請求項２又は５記載のバイモルフ圧電素
子。6. The piezoelectric ceramic plate is made of Pb (Ni
1/3 Nb 2/3) A Ti B Zr C O 3 (A + B + C = 1) are those represented by the claims 2 or 5 bimorph piezoelectric element according.
後、駆動の際に未分極状態の各セラミックス板に電界を
一方向にのみ印加することにより駆動と同時に分極処理
を行うことを特徴とする請求項２，５又は６記載のバイ
モルフ圧電素子。7. The polarization process is performed at the same time as driving by applying an electric field to each ceramic plate in an unpolarized state during driving after the piezoelectric ceramic plates are bonded together. The bimorph piezoelectric element according to 2, 5, or 6.
２枚の圧電セラミックス板と、前記各圧電セラミックス
板の他の主面に挟まれて固着されたシム材とを具備し、
前記シム材はその熱膨張係数が前記圧電セラミックス板
の熱膨張係数に近似するインバー材であるバイモルフ圧
電素子の製造方法であって、前記圧電セラミックス板と
前記シム材とを張り合わせる際に、圧電セラミックス板
のキュリー温度以上の温度に加熱することを特徴とする
バイモルフ圧電素子の製造方法。8. A piezoelectric ceramic plate having two main surfaces, each of which is coated with an electrode, and a shim member sandwiched and fixed to the other main surface of each piezoelectric ceramic plate.
The shim material is a method for manufacturing a bimorph piezoelectric element, which is an Invar material whose thermal expansion coefficient is close to that of the piezoelectric ceramic plate, and when the piezoelectric ceramic plate and the shim material are laminated, A method for manufacturing a bimorph piezoelectric element, which comprises heating to a temperature not lower than the Curie temperature of a ceramics plate.
２枚の圧電セラミックス板と、前記各圧電セラミックス
板の他の主面に挟まれて固着されたシム材とを具備し、
前記シム材は第１の方向における熱膨張係数が前記第１
方向に直交する第２方向における熱膨張係数と異なる繊
維強化金属材であるバイモルフ圧電素子の製造方法であ
って、前記圧電セラミックス板と前記シム材とを張り合
わせる際に、圧電セラミックス板のキュリー温度以上の
温度に加熱することを特徴とするバイモルフ圧電素子の
製造方法。9. A piezoceramic plate, one main surface of which is coated with electrodes, and a shim member sandwiched and fixed to the other main surface of each piezoceramic plate.
The shim material has a coefficient of thermal expansion in the first direction that is the first
A method of manufacturing a bimorph piezoelectric element, which is a fiber-reinforced metal material having a coefficient of thermal expansion different from that in a second direction orthogonal to the direction, wherein the Curie temperature of the piezoelectric ceramic plate when the piezoelectric ceramic plate and the shim material are bonded together A method for manufacturing a bimorph piezoelectric element, comprising heating to the above temperature.
た２枚の圧電セラミックス板と、前記各圧電セラミック
ス板の他の主面に挟まれて固着されたシム材とを具備
し、前記シム材は第１の方向における熱膨張係数が前記
圧電セラミックス板の熱膨張係数に近似し、かつ前記第
１の方向に直交する第２の方向における熱膨張係数が前
記圧電セラミックス板の熱膨張係数よりも大きい繊維強
化インバー材であるバイモルフ圧電素子の製造方法であ
って、前記圧電セラミックス板と前記シム材とを張り合
わせる際に、圧電セラミックス板のキュリー温度以上の
温度に加熱することを特徴とするバイモルフ圧電素子の
製造方法。10. A shim member comprising two piezoelectric ceramic plates each having one main surface coated with an electrode, and a shim member sandwiched and fixed to the other main surface of each piezoelectric ceramic plate. The material has a coefficient of thermal expansion close to that of the piezoelectric ceramic plate in a first direction, and a coefficient of thermal expansion in a second direction orthogonal to the first direction is greater than that of the piezoelectric ceramic plate. A method of manufacturing a bimorph piezoelectric element which is a large fiber-reinforced Invar material, characterized in that when the piezoelectric ceramic plate and the shim material are bonded together, the piezoelectric ceramic plate is heated to a temperature not lower than the Curie temperature of the piezoelectric ceramic plate. Method for manufacturing bimorph piezoelectric element.
とを加熱固着させる際に、前記圧電セラミックス板の材
料に分極処理が可能な電界を印加しつつ、室温まで冷却
することを特徴とする請求項８から１０のいずれかに記
載のバイモルフ圧電素子の製造方法。11. A method for cooling the piezoelectric ceramic plate to room temperature while applying an electric field capable of polarization treatment to the material of the piezoelectric ceramic plate when heating and fixing the piezoelectric ceramic plate and the shim material. 11. The method for manufacturing a bimorph piezoelectric element according to any one of 8 to 10.
とを加熱固着し、バイモルフ圧電素子を冷却した後、前
記圧電セラミックス板の圧電性が消失する温度以上に再
度加熱することを特徴とする請求項８から１０のいずれ
かに記載のバイモルフ圧電素子の製造方法。12. The piezoelectric ceramic plate and the shim member are fixed by heating, the bimorph piezoelectric element is cooled, and then the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity disappears. 11. The method for manufacturing a bimorph piezoelectric element according to any one of 8 to 10.
とを加熱固着し、バイモルフ圧電素子を冷却した後、前
記圧電セラミックス板の圧電性が消失する温度以上に再
度加熱し、前記圧電セラミックス板の材料に分極処理が
可能な電界を印加しつつ、室温まで冷却することを特徴
とする請求項８から１０のいずれかに記載のバイモルフ
圧電素子の製造方法。13. The piezoelectric ceramic plate and the shim material are fixed by heating, the bimorph piezoelectric element is cooled, and then the piezoelectric ceramic plate is heated again to a temperature at which the piezoelectricity of the piezoelectric ceramic plate disappears. 11. The method for manufacturing a bimorph piezoelectric element according to claim 8, further comprising the step of cooling to room temperature while applying an electric field capable of performing a polarization treatment to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09656895A JP3428773B2 (en) | 1995-04-21 | 1995-04-21 | Bimorph piezoelectric element and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09656895A JP3428773B2 (en) | 1995-04-21 | 1995-04-21 | Bimorph piezoelectric element and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08293632A JPH08293632A (en) | 1996-11-05 |
| JP3428773B2 true JP3428773B2 (en) | 2003-07-22 |
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ID=14168621
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|---|---|---|---|
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| JP2000332313A (en) * | 1999-05-21 | 2000-11-30 | Matsushita Electric Ind Co Ltd | Thin film piezoelectric bimorph element and application thereof |
| JP2002141576A (en) * | 2000-11-02 | 2002-05-17 | Fujitsu Ltd | Jointing method piezo element and electrode, and piezo micro actuator using it |
| EP2039934B1 (en) | 2006-07-11 | 2018-10-17 | Murata Manufacturing Co. Ltd. | Piezoelectric pump |
| WO2009072434A1 (en) * | 2007-12-03 | 2009-06-11 | Murata Manufacturing Co., Ltd. | Piezoelectric pump |
| US8266773B2 (en) * | 2008-09-29 | 2012-09-18 | Fujifilm Corporation | Method of manufacturing a piezoelectric actuator |
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| JPH08293632A (en) | 1996-11-05 |
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