JP3424232B2 - Method of forming silicon film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention
Form a filmWhoAbout the law. For more information, see
Silicon on support with n-silane as starting silicon source
The present invention relates to a method for forming a film. [0002] 2. Description of the Related Art JP-A-60-242612 discloses that
The following formula [0003] Embedded image (Where n is 3, 4 or 5 and R is
H or SiH_ThreeA) a cyclic silane compound represented by
The support arranges the gaseous atmosphere of halogen and halogen compounds
Formed in a defined volume chamber and then heat-
Deposits containing silicon atoms on the support
A method for making a laminated film is disclosed. In the above publication,
The cyclic silane compound represented by the above formula is
Efficient excitation and decomposition are not obtained, and a good film formation rate is obtained.
Can not be solved, and halogenated to solve this
Compound such as Cl_Two, Br_Two, I_Two, F_TwoEtc. are used
Is disclosed. The above method is a gas phase method,
Equipment and a relatively long time to form a deposited film.
I can say that. [0005] SUMMARY OF THE INVENTION It is an object of the present invention to
Silicon film by coating and firing the solution on the body,
In particular, amorphous silicon film and polycrystalline silicon film are formed
YouWhoIs to provide a law. Yet another aspect of the present invention
The target is a silicon film with a uniform thickness and a mirror surface on the support
It is an object of the present invention to provide a method for forming a thin film in a short time. The present invention
Still other objects and advantages of will be apparent from the description below.
Would. [0006] According to the present invention, there is provided the present invention.
The above objectives and advantages of(1)The following formula (A) [0007] Embedded image Cyclopentasila represented byTheContainTo
DissolutionLiquid compositionIs prepared, (2) After subjecting this solution composition to ultraviolet irradiation,
Coating on a support to form a coating, then (3) heating the coating to form a silicon film;
A method for forming a silicon film on a support, characterized by comprising:
Achieved by [0009] [0010] [0011]In the step (1), cyclopentasilane
A solution composition containing is prepared. This solution composition is
It may or may not contain a radical generator
No.Cyclopentasilane is, for example, diphenyldichloro
Cyclization of silane with lithium metal in tetrahydrofuran
To produce decaphenylcyclopentasilane,
Treated with hydrogen chloride in the presence of aluminum chloride
Treated with lithium aluminum hydride and silica gel
It can be manufactured by the following. Also, the radical generator used in the present invention
Generates radicals by heat and / or light
Compound. Such compounds include Biimi
Dazole compounds, benzoin compounds, triazine compounds
Compound, acetophenone compound, benzophenone compound
Compounds, α-diketone compounds, polynuclear quinone compounds,
Sandton compounds, azo compounds and the like can be mentioned.
You. Of these, biimidazole compounds and tria
Gin compounds, acetophenone compounds, azo compounds
Is preferred. Examples of the above biimidazole compound include
For example, 2,2'-bis (2-chlorophenyl) -4,4 ', 5,
5'-tetrakis (4-ethoxycarbonylphenyl)
-1,2'-biimidazole, 2,2'-bis (2-bromo
Mophenyl) -4,4 ', 5,5'-tetrakis (4-E
Toxylcarbonylphenyl) -1,2'-biimidazo
2,2'-bis (2-chlorophenyl) -4,4 ',
5,5'-tetraphenyl-1,2'-biimidazole,
2,2'-bis (2,4-dichlorophenyl) -4,4 ',
5,5'-tetraphenyl-1,2'-biimidazole,
2,2'-bis (2,4,6-trichlorophenyl) -4,
4 ', 5,5'-tetraphenyl-1,2'-biimidazo
2,2'-bis (2-bromophenyl) -4,
4 ', 5,5'-tetraphenyl-1,2'-biimidazo
2,2'-bis (2,4-dibromophenyl)-
4,4 ', 5,5'-tetraphenyl-1,2'-biimida
Sol, 2,2'-bis (2,4,6-tribromophenyl
) -4,4 ', 5,5'-tetraphenyl-1,2'-bi
Imidazole and the like can be mentioned. These biimi
Among the dazole compounds, preferred compounds are 2,2'-
Bis (2-chlorophenyl) -4,4 ', 5,5'-tetra
Laphenyl-1,2'-biimidazole, 2,2'-bis
(2,4-dichlorophenyl) -4,4 ', 5,5'-tetra
Laphenyl-1,2'-biimidazole, 2,2'-bis
(2,4,6-trichlorophenyl) -4,4 ', 5,5'
-Tetraphenyl-1,2'-biimidazole,
A particularly preferred compound is 2,2'-bis (2,4-dichloro
Phenyl) -4,4 ', 5,5'-tetraphenyl-1,
2'-biimidazole. In addition, the above triazine type
Specific examples of the compound include 2,4,6-tris (trichloromethane).
L-methyl) -s-triazine, 2-methyl-4,6-bi
S (trichloromethyl) -s-triazine, 2- [2-
(5-methylfuran-2-yl) ethenyl] -4,6-
Bis (trichloromethyl) -s-triazine, 2- [2
-(Furan-2-yl) ethenyl] -4,6-bis (g
Lichloromethyl) -s-triazine, 2- [2- (4-
Diethylamino-2-methylphenyl) ethenyl]-
4,6-bis (trichloromethyl) -s-triazine,
2- [2- (3,4-dimethoxyphenyl) ethenyl]
-4,6-bis (trichloromethyl) -s-triazi
2- (4-methoxyphenyl) -4,6-bis (to
Lichloromethyl) -s-triazine, 2- (4-ethoxy)
(Cystyryl) -4,6-bis (trichloromethyl) -s
-Triazine, 2- (4-n-butoxyphenyl)-
4,6-bis (trichloromethyl) -s-triazine and the like
Triazine compounds having a halomethyl group
Can be. Among these triazine compounds, 2-
[2- (3,4-dimethoxyphenyl) ethenyl] -4,
6-bis (trichloromethyl) -s-triazine is preferred
New These triazine compounds may be used alone or in combination.
These can be used in combination. Above acetofe
Specific examples of the non-based compound include 2-hydroxy-2-
Methyl-1-phenylpropan-1-one, 2-methyl
-1- [4- (methylthio) phenyl] -2-morpho
Linopropanone-1,2-benzyl-2-dimethylami
No-1- (4-morpholinophenyl) butanone-1,
1-hydroxy-cyclohexyl-phenyl-ketone,
2,2-dimethoxy-1,2-diphenylethane-1-o
And the like. These acetophenones
Among the compounds, in particular, 2-benzyl-2-dimethylamido
No-1- (4-morpholinophenyl) butanone-1 is
preferable. These acetophenone compounds are used alone
Or a mixture of two or more.
Specific examples of the azo compound include 2,2'-azobi.
(4-methoxy-2,4-dimethylvaleronitrile
), 2,2'-azobis (4-dimethylvaleronitrile
), 2,2'-azobis (2-methylpropionitrile
), 2,2'-azobis (2-methylbutyronitrile
1,1'-azobis (cyclohexane-1-cal
Bonitrile), 4,4'-azobis (4-cyanovalery
Acid), 1,1'-azobis (1-acetoxy
-1-phenylethane) and the like. this
Among these azo compounds, 2,2'-azobis (4
-Methoxy-2,4-dimethylvaleronitrile), 2,
2'-azobis (4-dimethylvaleronitrile), 2,
2'-azobis (2-methylpropionitrile), 2,
2'-azobisbutyronitrile, 2,2'-azobis
(2-methylbutyronitrile), 1,1'-azobis
(Cyclohexane-1-carbonitrile) and the like are preferable.
Can be used. Furthermore, as a radical generator, peroxidation
Benzoyl, diacyloyl per such as lauroyl peroxide
Oxide and the following formula [0013] Embedded image The silylcyclopentasilane represented by
Can be used. Silylcyclopentasilane is above
As a by-product when producing cyclopentasilane
Can be The cyclopentasilane and radiograph of the present invention
A solution composition containing a hydrogel generator may be suitable for these compounds.
Can be prepared by dissolving in a suitable solvent
You. Such a solvent is capable of generating radicals with cyclopentasilane.
It is not particularly limited as long as it dissolves the agent and does not react with the solvent.
Absent. For example, n-heptane, n-octane, decane,
Toluene, xylene, cymene, durene, indene, di
Pentene, tetrahydronaphthalene, decahydronaphthalene
Hydrocarbon solvents such as len and cyclohexylbenzene;
Ethylene glycol dimethyl ether, ethylene glyco
Diethyl ether, ethylene glycol methyl ethyl
Diether, diethylene glycol dimethyl ether,
Diethylene glycol diethyl ether, diethylene glycol
Recol methyl ethyl ether, 1,2-dimethoxy
Tan, bis (2-methoxyethyl) ether, p-dio
Ether solvents such as xane;
, Γ-butyrolactone, N-methyl-2-pyrroli
Don, dimethylformamide, dimethylsulfoxide,
Aprotic polar solvents such as cyclohexanone are preferred
Can be cited. Of these,
In terms of solubility of the iodine compound and stability of the solution, hydrocarbon-based
Solvents, ether solvents are more preferred, particularly preferred
Examples of the solvent include hydrocarbon solvents. This
These solvents may be used alone or as a mixture of two or more.
Can also be used. [0016]DissolutionForm solids concentration in liquid composition
The appropriate range depends on the thickness of the silicon film to be obtained.
It is preferably, for example, 0.01 to 30% by weight.
Preferably, 0.1 to 20% by weight, more preferably 1 to 10% by weight.
It is particularly preferred that the amount is by weight. Also, cyclopentasilane and radical generation
The ratio with the agent is based on 100 parts by weight of cyclopentasilane.
0.01 to 30 parts by weight, preferably 0.5 to 20 parts by weight
More preferred. [0018]In step (1),The liquid composition is, for example,
Prepared as described. Next, in step (2),
Before applying the above solution composition on a support to form a coating film
And then subjected to ultraviolet irradiation. Due to UV irradiation, the reason is
Although not always clear, improved application of solution composition
And it is possible to easily form a coating film having a uniform thickness.
You. UV irradiation is 0.1 to 100 J / cm at 365 nm. ^Two
Is sufficient. Low pressure light source
Or a high-pressure mercury lamp, deuterium lamp or Al
Gon, krypton, xenon and other rare gas discharge light,
YAG laser, argon laser, carbon dioxide laser
-, XeF, XeCl, XeBr, KrF, KrCl,
An excimer laser such as ArF or ArCl is used as a light source.
Can be used. These light sources are generally
A power output of 10 to 5000 W is used.
00 to 1000 W is sufficient.Support material, shape, etc.
Is not particularly limited, but the material can withstand the heat treatment of the next process.
Are preferred, and the support forming the coating film is flat.
Preferably it is. As specific examples of the material of these supports,
Glass, metal, plastic, ceramics, etc.
Quartz glass, ho
Silicate glass, soda glass, lead glass can be used, metal
Other than gold, silver, copper, nickel, aluminum, iron
As plastic, stainless steel can be used
Are polyimide, polyether sulfone,
The material shape is bulk, plate, film, etc.
It is not limited to. [0019]DissolutionWhen forming a coating film with the liquid composition, the solution
The composition is a membrane made of Teflon or regenerated cellulose.
Filters solid foreign matter with a filter, etc.
You.DissolutionWhen applying the liquid composition, the application method is particularly limited.
Not done. For example, spin coat, dip coat, car
Ten coat, roll coat, spray coat, ink jet
Jet method can be used. One application
And can be applied multiple times
You. Suitable coating thickness varies depending on solid concentration
To a thickness of 0.01 to 100 μm as a solid content
Is preferred, and a thickness of 0.1 to 10 μm is more preferred.
New Finally, in step (3), the coating film is heated
Is done. By heating, the solvent in the solution composition volatilizes,
And the silicon compound in the coating film decomposes to form a silicon film
GenerateYou. The heating temperature is preferably 300 ° C. or higher.
More preferably, the temperature is set to 400 ° C to 500 ° C.
A heating time of about 30 seconds to 30 minutes is sufficient. Also,
The heating atmosphere is an inert atmosphere such as nitrogen, helium, aluminum
An atmosphere composed of gon or the like is preferable. These are required
Alternatively, a gas containing a reducing gas such as hydrogen may be used. still
The details have not been determined, but according to the research conducted by the present inventors.
This heating first evaporates the solvent and at the same time
Or before and after that, the radical nature of cyclopentasilane
A ring-opening reaction occurs to partially oligomerize, and then this
Water due to thermal decomposition of oligomers and cyclopentasilane
Believe that silicon film is formed simultaneously with silicon
It is. The radical generator contained was silylcyclo.
When it is pentasilane, the silyl group is removed and silylla
What forms dical and cyclopentasilanyl radical
I can believe. [0022] Thus, according to the first method of the present invention, the support
Silicon film, especially amorphous silicon film, on the carrier
It can be formed conveniently. The thickness of the silicon film
For example, it can be 0.001 μm to 10 μm. The present inventionUsed inThe solution composition is
Fluorine and silicon as needed as long as the performance is not impaired.
A small amount of surface tension adjusting material such as
be able to. These solutions do not impair the desired function
Fluorine, silicone, nonionic as required
A small amount of a surface tension adjusting material such as a system can be added.
This nonionic surface tension adjusting material is applied to the solution application target.
Improved wettability and improved leveling of the applied film.
Good, prevents bumping of coating film, generation of yuzu skin, etc.
It is useful for you. With such a nonionic surfactant
A fluoroalkyl group or a perfluoroalkyl
Fluorinated surfactants having a phenyl group, or oxyalkyl
Examples of polyether alkyl surfactants having a group
be able to. Examples of the fluorine-based surfactant include C₉
F₁₉CONHC₁₂H_{twenty five}, C₈F₁₇SO_TwoNH- (C_TwoH
_FourO)₆H, C₉F₁₇O (Pluronic L-35) C
₉F₁₇, C₉F₁₇O (Pluronic P-84) C₉F₁₇,
C₉F₇O (Tetronic-704) (C₉F₁₇)_TwoEtc.
Can be mentioned. (Here, Pluronic L-3
5: Polyoxypropylene-poly manufactured by Asahi Denka Kogyo Co., Ltd.
Oxyethylene block copolymer, average molecular weight 1,90
0; Pluronic P-84: Poly, manufactured by Asahi Denka Kogyo Co., Ltd.
Oxypropylene-polyoxyethylene block copolymer
Body, average molecular weight 4,200; Tetronic-704: Asahi
N, N, N ', N'-tetrakis (Polymer Co., Ltd.)
Lioxypropylene-polyoxyethylene block copolymer
Coalescence), average molecular weight 5,000), etc.
Wear. Specific examples of these fluorine-based surfactants include:
By product name, F-top EF301, EF303, E
F352 (manufactured by Shin-Akita Kasei Co., Ltd.), Megafac F17
1, F173 (Dai Nippon Ink Co., Ltd.), Asahigar
Do AG710 (manufactured by Asahi Glass Co., Ltd.), Florard FC-1
70C, FC430, FC431 (Sumitomo 3M)
Co., Ltd.), Surflon S-382, SC101,
SC102, SC103, SC104, SC10
5. SC106 (manufactured by Asahi Glass Co., Ltd.), BM-100
0, 1100 (manufactured by BM-Chemie), Sch
sego-Fluor (Schwegmann)
What can I list? Polyether alkyl interface
Activators include polyoxyethylene alkyl ether
, Polyoxyethylene allyl ether, polyoxyether
Tylene alkylphenol ether, polyoxyethylene
Fatty acid esters, sorbitan fatty acid esters, polio
Xyethylene sorbitan fatty acid ester, oxyethylene
Oxypropylene block polymer
Can be. These polyether alkyl surfactants
As a specific example of the product name, Emulgen 105, 4
30, 810, 920, Rheodol SP-40S,
TW-L120, Emanol 3199, 4110,
Exel P-40S, Bridge 30, 52, 72
Id 92, Alassell 20, Emazor 320, Tween
20, 60, Merge 45 (all manufactured by Kao Corporation),
Noniball 55 (manufactured by Sanyo Chemical Co., Ltd.)
Can be. Non-ionic surfactants other than the above,
For example, polyoxyethylene fatty acid ester, polyoxy
Ethylene sorbitan fatty acid ester, polyalkylene
Oxide block copolymers, etc.
Stat 2500 (manufactured by Sanyo Chemical Industries, Ltd.), SN-E
X9228 (manufactured by San Nopco Co., Ltd.), Nonal 530
(Manufactured by Toho Chemical Industry Co., Ltd.). [0025] [0026]BookAmorphous silicon formed by the invention
Con film, solar cell, light sensor, thin film transistor
-Used for various electronic devices such as photosensitive drums and protective films
Is done. [0027] The present invention will be described in more detail with reference to the following examples.
As will be described, the present invention is not limited to these examples.
Absent.Examples 1 to 5 are reference examples, and Example 6 is
It is an example of the present invention. Synthesis Example 1 Thermometer, cooling condenser, dropping funnel and stirrer
Algo in a three-liter four-necked flask equipped with
1 L of dried tetrahydrofuran
And 18.3 g of lithium metal, and
Bring it. The suspension is stirred at 0 ° C.
333 g of nildichlorosilane is added from a dropping funnel,
After the addition, the lithium metal is completely removed at room temperature
The stirring was continued for another 12 hours. The reaction mixture is added to 5 L of ice
The reaction product was precipitated by pouring into water. This precipitate is filtered off
Wash well with water, then wash with cyclohexane, vacuum
By drying, 140 g of a white solid was obtained. This white
Solid is IR,¹H-NMR,²⁹Each spec of Si-NMR
The mixture of the two components (hereinafter referred to as silicon compound)
Mixture A). This
Mixture A of iodine compounds for high performance liquid chromatography
Separation showed that the ratio of main product to by-product was 8: 1.
It turned out to be. In addition, each IR,¹H-
NMR,²⁹Each spectrum of Si-NMR and TOF-MS
The main product is decaphenylcyclopentasilane
(Hereinafter referred to as silicon compound B), and the by-product is dodecaf
Phenylcyclohexasilane (hereinafter referred to as silicon compound C)
). Synthesis Example 2 50 g of a mixture A of the above silicon compound and dried toluene
Charge 500 ml into a 1 L flask and add aluminum chloride
Of hydrogen chloride at room temperature.
The reaction was continued for 5 hours under an atmosphere. Here, separately, hydrogenation
20 g of lithium aluminum and 200 of diethyl ether
ml into a 2 L flask, and 0 g under an argon atmosphere.
The above reaction mixture was added to the mixture while stirring at
After stirring for another hour, stirring was further continued at room temperature for 12 hours. Reaction mixture
The aluminum compound was removed from the compound and the solvent was distilled off.
5 g of a thick oil was obtained. This is IR,¹H-N
MR,²⁹From each spectrum of Si-NMR and GC-MS
Cyclopentasilane (hereinafter referred to as silicon compound D)
) And silylcyclopentasilane (hereinafter referred to as siliconized
(Hereinafter referred to as Compound E) in a ratio of 8: 1
It was found to be mixture F) of elemental compounds. Synthesis Example 3 85 g of the mixture A of the silicon compound was re-used with 4 L of ethyl acetate.
Crystallization gave 55 g of pure silicon compound B.
50 g of the silicon compound B thus obtained was used in Synthesis Example 2.
By following the same procedure, 5 g of pure silicon compound D was obtained.
Was. It is purified by gas chromatography
It was confirmed that it was 99% or more. Embodiment 1 Under an argon atmosphere, the silicon compound obtained in Synthesis Example 2 was
A solution is prepared by dissolving 5 g of the mixture F in 95 g of toluene.
did. Spin this solution onto a quartz substrate in an argon atmosphere.
Then, a film of the mixture F of the silicon compound was formed. This
Is heated at 500 ° C for 5 minutes in an argon atmosphere
As a result, a silicon film remained on the substrate. This silico
100% amorphous from the Raman scattering spectrum
It was in a state. X is added to this amorphous silicon.
irradiating with eCl excimer laser (308nm)
The silicon was polycrystallized, and the crystallization ratio was 75%.
The polycrystallized silicon film is analyzed by ESCA spectrum.
When the 2P orbital energy of the elementary atom is measured, it is 99.0 eV
And it was found to be silicon. ComparisonreferenceExample 1 Silicon compound D obtained in Synthesis Example 3 under an argon atmosphere
  5 g was dissolved in 95 g of toluene to prepare a solution. This
Solution spin coated on quartz substrate under argon atmosphere
However, it was not possible to obtain a uniform film with severe cissing. Embodiment 2 Silicon compound D obtained in Synthesis Example 3 under an argon atmosphere
  5 g of azobisisobutyronitrile 50 mg
A solution was prepared by dissolving the solution in 95 g of the solvent. Argo this solution
Spin-coated on a quartz substrate in an atmosphere of silicon
Was formed. This coated substrate is placed in an argon atmosphere for 5 minutes.
After heating at 00 ° C for 5 minutes, a silicon film remains on the substrate.
Stayed. From this Raman scattering spectrum,
It was in a 100% amorphous state. This amorphous
XeCl excimer laser (308n)
m), silicon is polycrystallized and the crystallization rate
Was 75%. ESCA for polycrystalline silicon film
Measures 2P orbital energy of silicon atom by spectrum
Then, it is 99.0 eV and it is silicon.
It turns out. Embodiment 3 Azobisisobuty, a radical generator used in Example 3
50 mg of lonitrile was added to 2- [2- (3,4-dimethoxy)
Cyphenyl) ethenyl] -4,6-bis (trichlorometh
The solution composition was replaced with 97 mg of chill) -s-triazine.
Prepared. Using this solution, the other steps were the same as in Example 2.
To form a silicon compound film by spin coating on a quartz substrate.
Was. The coated substrate is heated at 450 ° C. for 1 hour in an argon atmosphere.
After heating for 0 minutes, a silicon film remained on the substrate. This
The silicon film of 100%
It was in the morphus state. This amorphous silicon
Irradiate XeCl excimer laser (308nm)
As a result, the silicon was polycrystallized and the crystallization rate was 70%.
there were. This silicon film was measured using ESCA spectrum.
When the 2P orbital energy of the elementary atom is measured, it is 99.0 eV
It turned out to be silicon. Embodiment 4 Silicon compound D obtained in Synthesis Example 3 under an argon atmosphere
  5 g was dissolved in 95 g of toluene to prepare a solution. This
Irradiate UV light on the solution of
The plate was spin-coated to form a silicon compound film. this
The coated substrate is heated at 500 ° C. for 5 minutes in an argon atmosphere.
As a result, a silicon film remained on the substrate. This silicon
The film is 100% amorphous from Raman scattering spectrum
Condition. Xe is added to this amorphous silicon.
Irradiated with Cl excimer laser (308nm)
The silicon was polycrystallized, and the crystallization ratio was 75%.
The polycrystallized silicon film is analyzed by ESCA spectrum.
When the 2P orbital energy of the elementary atom is measured, it is 99.0 eV
It turned out to be silicon. Embodiment 5 Under an argon atmosphere, the silicon compound obtained in Synthesis Example 2 was
A solution is prepared by dissolving 5 g of the mixture F in 95 g of toluene.
did. Spin this solution onto a quartz substrate in an argon atmosphere.
Then, a film of the mixture F of the silicon compound was formed. This
After applying UV to the coated substrate under argon atmosphere,
Heating at 0 ° C for 5 minutes leaves a silicon film on the substrate
did. From the Raman scattering spectrum, this silicon film is 1
It was in a 00% amorphous state. This amorphous state
XeCl excimer laser (308n)
m), silicon is polycrystallized and the crystallization rate
Was 75%. ESCA for polycrystalline silicon film
Measures 2P orbital energy of silicon atom by spectrum
Then, it is 99.0 eV and it is silicon.
It turns out. Embodiment 6 5 g of cyclopentasilane and 45 g of decahydronaphthalene
Into the solution and add phosphorus to the solution as a photoradical polymerization initiator.
Luciline containing atoms, carbon atoms and oxygen atoms
(Registered trademark) (manufactured by Ciba Geigy) 0.1 g
Prepared. Ultraviolet light is applied to this solution using a 500 W high-pressure mercury lamp.
Line (365 nm, 15 mW / cm^Two) For 1 minute
After that, the presence of cyclopentasilane was determined by gas chromatography.
Inspection of nothing showed that cyclopentasilane monomer was completely
Not detected, all are converted to high boiling polysilane
Was. This polysilane solution is applied to a glass substrate at 1,500 rpm.
good polysilane film formed by spin coating with m
It had been. This polysilane film is placed in a nitrogen atmosphere at 500
After heating at 5 ° C for 5 minutes,
A con film was obtained. Measure the ESCA of this silicon film
Then, in addition to the peak of metallic silicon at 99 eV,
C to 286 eV_1s535e
O to V_1sAnd peak at 133 eV_2pBelong to
Peak was observed.

──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. ⁷ identification code FI H01L 31/04 H01L 31/04 V 31/10 31/10 A (58) Field surveyed (Int.Cl. ⁷ , DB name) C01B 33/02-33/04 C09D 1/00 C09D 183/16 C08G 77/60

Claims (1)

(57) [Claims] [Claim 1] (1) The following formula (A) A solution composition containing cyclopentasilane represented by the following formula is prepared. (2) After subjecting this solution composition to irradiation with ultraviolet light,
Coating on a support to form a coating, and then (3) heating the coating to form a silicon film;
A method for forming a silicon film on a support.