JP3423096B2 - Optical waveguide material for inspection test and inspection test method - Google Patents
Optical waveguide material for inspection test and inspection test methodInfo
- Publication number
- JP3423096B2 JP3423096B2 JP1604995A JP1604995A JP3423096B2 JP 3423096 B2 JP3423096 B2 JP 3423096B2 JP 1604995 A JP1604995 A JP 1604995A JP 1604995 A JP1604995 A JP 1604995A JP 3423096 B2 JP3423096 B2 JP 3423096B2
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- Prior art keywords
- optical waveguide
- inspection test
- wafer
- optical
- inspection
- Prior art date
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- Testing Of Optical Devices Or Fibers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、検査試験用光導波路パ
ターンを有する材料および検査試験方法に関するもので
ある。更に詳しく述べるならば、本発明は、多数の光導
波路が形成されたウエハを切断して、所望の光導波路を
有するチップを製造するに際し、チップに切断する前
に、ウエハ上の光導波路の品質性能の良否を容易に判断
し得る検査試験用光導波路パターンを有する材料および
検査試験方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material having an inspection test optical waveguide pattern and an inspection test method. More specifically, the present invention is to cut a wafer on which a large number of optical waveguides are formed to manufacture a chip having a desired optical waveguide. The present invention relates to a material having an optical waveguide pattern for an inspection test and an inspection test method capable of easily determining the quality of performance.
【０００２】[0002]
【従来の技術】従来、ウエハ上に形成された光導波路光
素子の良否を判断するには、ウエハ上に所定のパターン
に従って形成された光導波路上に誘電体バッファ層又は
金電極を形成する等の後工程を施し、所定の構成、形状
に切断して最終形態のチップとしてから、このチップに
ついて光導波路の性能品質を検査判定していた。このた
めこの状態で品質不良と判断された場合、上記工程が無
駄になってしまい、作業能率の低下およびコスト上昇の
原因となっていた。2. Description of the Related Art Conventionally, in order to judge the quality of an optical waveguide optical element formed on a wafer, a dielectric buffer layer or a gold electrode is formed on the optical waveguide formed on a wafer according to a predetermined pattern. After performing the subsequent step, cutting into a predetermined configuration and shape to obtain a chip in the final form, the performance quality of the optical waveguide was inspected and judged for this chip. Therefore, if it is determined that the quality is poor in this state, the above process is wasted, which causes a decrease in work efficiency and an increase in cost.
【０００３】すなわち、従来の光導波路素子の製造工程
においては、ニオブ酸リチウムからなるウエハ上にチタ
ン薄膜形成、およびフオトリソグラフ技術によるパタニ
ングによりチタンから成る所望の導波路パターンを描
き、これを熱拡散させて導波路を形成し、さらにその上
に誘電体バッファ層および所望パターンの電極層を形成
し、これを切断して導波路の入出端面を形成して光素子
（チップ）を得ることが行われている。このような従来
工程では、導波路の性能品質は得られたチップについて
検査判定されていた。このため、チップが不良と判定さ
れると、それ迄の工程、材料がすべて無駄になってしま
っていたのである。That is, in a conventional manufacturing process of an optical waveguide device, a titanium thin film is formed on a wafer made of lithium niobate, and a desired waveguide pattern made of titanium is drawn by patterning by photolithographic technique, and this is subjected to thermal diffusion. Then, a waveguide is formed to further form a dielectric buffer layer and an electrode layer having a desired pattern on the waveguide, and the waveguide is cut to form the input / output end faces of the waveguide to obtain an optical element (chip). It is being appreciated. In such a conventional process, the performance quality of the waveguide is inspected and judged for the obtained chip. Therefore, if a chip is determined to be defective, all the processes and materials up to that point have been wasted.
【０００４】一般にニオブ酸リチウムを基体（ウエハ）
とする光導波路素子においては、ニオブ酸リチウムが、
格子欠陥、水素不純物濃度のばらつきなどのような不安
定要素を含み再現性が不良であるという、現状技術で製
造可能な酸化物結晶に特有の欠点を有しているため、得
られる導波路の表面状態、導波損失などの特性は、ウエ
ハ自体の特性および導波路形成条件に敏感に影響され
る。このため、得られる導波路素子（チップ）につい
て、その不良品発生の予測がつき難いという問題点があ
る。Generally, a lithium niobate substrate (wafer)
In the optical waveguide element, the lithium niobate is
Since the reproducibility is poor because it contains unstable elements such as lattice defects and variations in hydrogen impurity concentration, etc. Properties such as surface condition and waveguide loss are sensitively affected by the properties of the wafer itself and the waveguide forming conditions. For this reason, it is difficult to predict the occurrence of defective products in the obtained waveguide element (chip).
【０００５】[0005]
【発明が解決しようとする課題】本発明は光導波路材料
について、それが光素子（チップ）に切断される前に、
特に導波路形成直後に、導波路の性能品質を検査試験
し、その良否を判定できる検査試験用光導波路パターン
を有する材料、および検査試験方法を提供しようとする
ものである。DISCLOSURE OF THE INVENTION The present invention relates to an optical waveguide material, before it is cut into an optical element (chip),
In particular, it is an object of the present invention to provide a material having an optical waveguide pattern for an inspection test capable of inspecting the performance quality of the waveguide immediately after forming the waveguide and determining the quality thereof, and an inspection test method.
【０００６】[0006]
【課題を解決するための手段】本発明の検査試験用光導
波路パターンを有する材料は、円盤状ウエハの一面上に
互に平行に形成された複数個の光導波路を有し、この複
数個の光導波路中に、他の光導波路の両端よりも外側に
長く伸び出ている両端を有する少なくとも１本の検査試
験用直線光導波路が配置されていることを特徴とするも
のである。A material having an optical waveguide pattern for inspection test according to the present invention has a plurality of optical waveguides formed in parallel with each other on one surface of a disk-shaped wafer. It is characterized in that at least one linear optical waveguide for inspection and testing, which has both ends extending longer than both ends of other optical waveguides, is arranged in the optical waveguide.
【０００７】また、本発明の、検査試験用光導波路パタ
ーンを有する材料において、前記円盤状ウエハがニオブ
酸リチウムからなり、前記光導波路が、前記ウエハ表面
部分に所望のパターンに従って、チタンを熱拡散させて
形成されたものであることが好ましい。さらに本発明の
検査試験用光導波路パターンを有する材料において、前
記光導波路がフオトリソグラフ用マスクを用いて前記円
盤状ウエハ上にパターニングされたものであることが好
ましい。さらに本発明の検査試験用光導波路パターンを
有する材料において前記検査試験用光導波路を除く他の
光導波路がマッハツェンダー型光導波路であることが好
ましい。Further, in the material having the optical waveguide pattern for inspection test of the present invention, the disk-shaped wafer is made of lithium niobate, and the optical waveguide thermally diffuses titanium on the surface portion of the wafer according to a desired pattern. It is preferably formed by the above method. Further, in the material having the optical waveguide pattern for inspection test of the present invention, it is preferable that the optical waveguide is patterned on the disk-shaped wafer using a photolithographic mask. Further, in the material having the optical waveguide pattern for inspection test of the present invention, it is preferable that the optical waveguides other than the optical waveguide for inspection test are Mach-Zehnder type optical waveguides.
【０００８】本発明の光導波路材料の検査試験方法は、
前記本発明の検査試験用光導波路パターンを有する材料
を、前記検査試験用光導波路の両端面のみが露出するよ
うに切断し、これを研磨し、この研磨端面の一方から光
波を入力し、他方からの出力光波を検出して、この検査
試験用光導波路の光導波特性を測定し、この測定結果に
基いて、上記ウエハ上の全光導波路の品質を判定するこ
とを特徴とするものである。The inspection test method of the optical waveguide material of the present invention is
The material having the optical waveguide pattern for inspection test of the present invention is cut so that only both end faces of the optical waveguide for inspection test are exposed, and this is polished, and a light wave is input from one of the polished end faces, and the other. It is characterized by detecting the output light wave from the, measuring the optical waveguide characteristics of this inspection test optical waveguide, and determining the quality of all the optical waveguides on the wafer based on this measurement result. is there.
【０００９】本発明の光導波路材料の検査試験方法にお
いて前記判定により良と判定された光導波路材料につい
て、そのウエハ研磨端面に対し、ウエハ割れ防止のため
の面取り加工を施すことが好ましい。In the optical waveguide material inspection / testing method of the present invention, it is preferable that the polished end surface of the wafer is chamfered to prevent the wafer from cracking in the optical waveguide material judged to be good by the above judgment.
【００１０】[0010]
【作用及び実施例】本発明の検査試験用光導波路パター
ンを有する材料は、円盤状ウエハの一面上に、互に平行
な複数個の光導波路を形成する際に、この複数個の光導
波路に、１個以上の検査試験用光導波路を形成配置した
ものであって、この検査試験用光導波路は、それと平行
に形成された他の光導波路の両端よりも外側に長く伸び
出している両端を有するものである。OPERATION AND EXAMPLES The material having the optical waveguide pattern for inspection test of the present invention is used for forming a plurality of optical waveguides parallel to each other on one surface of a disk-shaped wafer. One or more optical waveguides for inspection and test are formed and arranged, and the optical waveguide for inspection and test has both ends extending outwardly longer than the ends of other optical waveguides formed in parallel therewith. I have.
【００１１】図１に示された本発明の検査試験用光導波
路パターンを有する材料の一実施態様において、円盤状
ウエハ１上に多数の光導波路素子チップの輪郭２ａ，２
ｂが描かれ、これらチップ２ａ，２ｂ中にＴｉ熱拡散に
よる光導波路（例えば、マッハツェンダー型導波路）３
ａ，３ｂが形成されている。図１において、円盤状ウエ
ハ１の中心線に沿って、他の光導波路パターンよりも長
い１本の直線状光導波路パターンを有する部分４が描か
れ、このパターン上に検査試験用直線状光導波路５が形
成される。In one embodiment of the material having the optical waveguide pattern for inspection test of the present invention shown in FIG. 1, a plurality of optical waveguide element chip contours 2a, 2 are formed on the disk-shaped wafer 1.
b is drawn, and an optical waveguide (for example, a Mach-Zehnder type waveguide) 3 by Ti thermal diffusion is formed in these chips 2a and 2b.
a and 3b are formed. In FIG. 1, a portion 4 having one linear optical waveguide pattern longer than other optical waveguide patterns is drawn along the center line of the disk-shaped wafer 1, and a linear optical waveguide for inspection test is formed on this pattern 4. 5 is formed.
【００１２】このようにして形成されたウエハ−光導波
路パターンを有する材料を切断面６に沿って切断すれば
検査試験用直線状光導波路５のみがその両端部において
切断され、光入出端面を形成することができるが、他の
光導波路３ａ，３ｂは切断されることはない。そこで、
ウエハの切断面を研磨し、検査試験用光導波路５の研磨
端面の一方から光波を入力し、他端からの出力光から光
導波損失を測定して、検査試験用光導波路５の性能・品
質を判定する。この判定結果が良の場合は、このウエハ
１上の他の光導波路３ａ，３ｂのすべての性能品質を良
と判定し、このウエハ−光導波路材料を次の製造工程、
つまり、誘電体バッファ層、電極の形成工程に送付す
る。若し、判定結果は不良の場合、ウエハ１上の他の光
導波路３ａ，３ｂのすべての性能品質を不良と判定し、
このウエハ−光導波路材料は、次工程に送付しないこと
にする。If the material having the wafer-optical waveguide pattern thus formed is cut along the cutting surface 6, only the linear optical waveguide 5 for inspection and test is cut at both ends thereof to form a light input / output end surface. However, the other optical waveguides 3a and 3b are not cut. Therefore,
The performance and quality of the inspection test optical waveguide 5 are measured by polishing the cut surface of the wafer, inputting a light wave from one of the polished end faces of the inspection test optical waveguide 5, and measuring the optical waveguide loss from the output light from the other end. To judge. If the determination result is good, it is determined that all the performance qualities of the other optical waveguides 3a and 3b on the wafer 1 are good, and this wafer-optical waveguide material is subjected to the next manufacturing process,
That is, it is sent to the step of forming the dielectric buffer layer and the electrode. If the determination result is defective, it is determined that all performance qualities of the other optical waveguides 3a and 3b on the wafer 1 are defective,
This wafer-optical waveguide material will not be sent to the next step.
【００１３】本発明において、検査試験用直線状光導波
路は、ウエハ１個当り、２本以上形成してもよい。例え
ば、図２において、互に平行な多数の光導波路パターン
３ａ，３ｂ中に、それよりも長い２本の検査試験用直線
状光導波路パターン部分４ａ，４ｂを描き、その中に２
本の検査試験用直線状光導波路５ａ，５ｂが形成されて
いる。このように１個のウエハ当り２個以上の検査試験
用直線状光導波路について検査試験を行うことにより、
良否判定の精度を向上させることができる。In the present invention, two or more linear optical waveguides for inspection tests may be formed per wafer. For example, in FIG. 2, in a plurality of optical waveguide patterns 3a and 3b parallel to each other, two linear optical waveguide pattern portions 4a and 4b for inspection and testing which are longer than that are drawn, and 2 are drawn in them.
Linear inspection optical waveguides 5a and 5b are formed. In this way, by performing an inspection test on two or more inspection test linear optical waveguides per wafer,
The accuracy of the quality judgment can be improved.
【００１４】本発明において、円盤状ウエハは、光学デ
バイスにもちいる光学結晶材料もしくは、光学非結晶材
料例えばニオブ酸リチウム、タンタル酸リチウムなどに
より形成することが好ましく、特にニオブ酸リチウムに
より形成されることが好ましい。また光導波路は、ウエ
ハの一面上に所望のパターンに従って遷移金属、希土類
金属、水素などの１種、特にチタン（Ｔｉ）を熱拡散さ
せて形成することが好ましい。In the present invention, the disk-shaped wafer is preferably formed of an optical crystalline material used for an optical device or an optical amorphous material such as lithium niobate or lithium tantalate, and particularly lithium niobate. It is preferable. The optical waveguide is preferably formed by thermally diffusing one kind of transition metal, rare earth metal, hydrogen, etc., particularly titanium (Ti) on one surface of the wafer according to a desired pattern.
【００１５】上記光導波路の形成は、フオトリソグラフ
用マスクを用いてパターンニングを行うことが好まし
い。The optical waveguide is preferably formed by patterning using a photolithographic mask.
【００１６】本発明において、検査試験用光導波路を除
く他の光導波路は、マッハツェンダー型光導波路である
ことが好ましい。In the present invention, the optical waveguides other than the optical waveguide for inspection test are preferably Mach-Zehnder type optical waveguides.
【００１７】本発明の検査試験用光導波路材料を用い、
検査試験することにより、光導波路素子製造の初期段階
において、その良否を判定することができるので、不良
品について無駄な工程を施すことがなくなり、従来方法
に比して約４工程、約２週間の時間を節約することがで
きる。Using the optical waveguide material for inspection test of the present invention,
By conducting the inspection test, it is possible to judge the quality at the initial stage of manufacturing the optical waveguide device, so that it is possible to prevent unnecessary processes from being performed on defective products. Can save time.
【００１８】ニオブ酸リチウムなどのようにへき開性の
あるウエハを用いる場合、ウエハの切断面において、へ
き開によるクラックを生ずることがある。このような問
題を解消するために、次工程に送付する切断ウエハにつ
いて、その切断面の端縁部に、面取り処理を施して、へ
き開を防止することが好ましい。When a cleavable wafer such as lithium niobate is used, cracks may occur on the cut surface of the wafer due to cleavage. In order to solve such a problem, it is preferable that the cut wafer to be sent to the next step be subjected to a chamfering process at the edge of the cut surface to prevent cleavage.
【００１９】図３において検査試験用光導波路５を有す
るウエハ１に切断、研磨を施し、これに光導波損失検査
を施した後、その判定結果が良の場合、切断面７の端縁
部に面取り処理を施して面取り部７を形成する。それに
よって、ウエハ１の切断面端縁部におけるへき開を防止
することができる。In FIG. 3, the wafer 1 having the optical waveguide 5 for inspection and testing is cut and polished, and the optical waveguide loss inspection is performed on this. The chamfering process is performed to form the chamfered portion 7. As a result, cleavage at the edge of the cut surface of the wafer 1 can be prevented.
【００２０】[0020]
【発明の効果】本発明により、ウエハ上に形成された光
導波路の性能品質を、光素子製造の初期段階において測
定判定することが可能になり、その結果従来不良品に対
して施してきた作業および材料の無駄を解消することが
できる。According to the present invention, it is possible to measure and judge the performance quality of the optical waveguide formed on the wafer in the initial stage of the optical element manufacturing, and as a result, the work performed on the defective product in the past. And the waste of material can be eliminated.
【図１】本発明の検査試験用光導波路材料の一例の構成
を示す平面説明図。FIG. 1 is an explanatory plan view showing a configuration of an example of an optical waveguide material for inspection test of the present invention.
【図２】本発明の検査試験用光導波路材料の他の例の構
成を示す平面説明図。FIG. 2 is an explanatory plan view showing the configuration of another example of the optical waveguide material for inspection test of the present invention.
【図３】本発明の検査試験用光導波路材料の切断研磨、
検査面取り処理の手順を示す説明図。FIG. 3 is a cut / polishing of the optical waveguide material for inspection test of the present invention,
Explanatory drawing which shows the procedure of an inspection chamfering process.
１…ウエハ ２ａ，２ｂ…光導波路パターン ３ａ，３ｂ…光導波路 ４，４ａ，４ｂ…検査試験用光導波路パターン ５，５ａ，５ｂ…検査試験用光導波路 ６…切断面 ７…面取り部 1 ... Wafer 2a, 2b ... Optical waveguide pattern 3a, 3b ... Optical waveguide 4, 4a, 4b ... Optical waveguide pattern for inspection test 5, 5a, 5b ... Optical waveguide for inspection test 6 ... cut surface 7 ... Chamfer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 市川 潤一郎 千葉県船橋市豊富町585番地 住友大阪 セメント株式会社 中央研究所内 (56)参考文献 特開 平２−12108（ＪＰ，Ａ) 特開 平２−10242（ＪＰ，Ａ) 特開 昭61−198106（ＪＰ，Ａ) 特開 平６−281898（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01M 11/00 - 11/08 G02B 6/12 - 6/14 G02F 1/29 - 7/00 ＪＩＣＳＴファイル（ＪＯＩＳ)─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Junichiro Ichikawa, 585 Tomimachi, Funabashi, Chiba Sumitomo Osaka Cement Co., Ltd. Central Research Laboratory (56) Reference JP 2-12108 (JP, A) JP 2 -10242 (JP, A) JP 61-198106 (JP, A) JP 6-281898 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) G01M 11/00- 11/08 G02B 6/12-6/14 G02F 1/29-7/00 JISST file (JOIS)
Claims (6)
された複数個の光導波路を有し、この複数個の光導波路
中に、他の光導波路の両端よりも外側に長く伸び出てい
る両端を有する少なくとも１本の検査試験用直線状光導
波路が配置されていることを特徴とする検査試験用光導
波路パターンを有する材料。1. A plurality of optical waveguides are formed in parallel with each other on one surface of a disk-shaped wafer, and extend in the plurality of optical waveguides outwardly beyond both ends of the other optical waveguides. A material having an inspection / testing optical waveguide pattern, in which at least one linear optical waveguide for inspection / testing having both ends is arranged.
らなり、前記光導波路が、前記ウエハ表面部分に所望の
パターンに従って、チタンを熱拡散させて形成されたも
のである、請求項１に記載の検査試験用光導波路パター
ンを有する材料。2. The disk-shaped wafer is made of lithium niobate, and the optical waveguide is formed by thermally diffusing titanium on a surface portion of the wafer in accordance with a desired pattern. A material having an optical waveguide pattern for inspection test.
ラフ用マスクを用いて、前記円盤状ウエハ上にパターニ
ングされたものである、請求項１に記載の検査試験用光
導波路パターンを有する材料。3. The material having an optical waveguide pattern for inspection test according to claim 1, wherein the optical waveguide pattern is patterned on the disk-shaped wafer using a photolithographic mask.
波路がマッハツェンダー型光導波路である、請求項１に
記載の検査試験用光導波路パターンを有する材料。4. The material having an optical waveguide pattern for inspection test according to claim 1, wherein the optical waveguides other than the optical waveguide for inspection test are Mach-Zehnder type optical waveguides.
査試験用光導波路パターンを有する材料を、前記検査試
験用光導波路の両端面が露出するように切断し、これを
研磨し、この研磨端面の一方から光波を入力し、他方か
らの出力光波を検出して、この検査試験用光導波路の光
導波特性を測定し、この測定結果に基いて、前記ウエハ
上の全光導波路の品質を判定することを特徴とする、光
導波路材料の検査試験方法。5. The material having the optical waveguide pattern for inspection test according to any one of claims 1 to 4 is cut so that both end faces of the optical waveguide for inspection test are exposed, and this is polished. , A light wave is input from one of the polishing end faces, and an output light wave from the other is detected to measure the optical waveguide characteristics of the inspection test optical waveguide, and based on the measurement result, all optical waveguides on the wafer are measured. A method for inspecting and testing an optical waveguide material, characterized by determining the quality of a waveguide.
材料について、そのウエハ研磨端面に対し、ウエハ割れ
防止のための面取り加工を施す、請求項５に記載の光導
波路材料の検査試験方法。6. The method of inspecting and testing an optical waveguide material according to claim 5 , wherein a chamfering process for preventing a wafer crack is performed on a wafer polishing end surface of the optical waveguide material determined to be good by the determination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1604995A JP3423096B2 (en) | 1995-02-02 | 1995-02-02 | Optical waveguide material for inspection test and inspection test method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1604995A JP3423096B2 (en) | 1995-02-02 | 1995-02-02 | Optical waveguide material for inspection test and inspection test method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08210946A JPH08210946A (en) | 1996-08-20 |
| JP3423096B2 true JP3423096B2 (en) | 2003-07-07 |
Family
ID=11905730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1604995A Expired - Fee Related JP3423096B2 (en) | 1995-02-02 | 1995-02-02 | Optical waveguide material for inspection test and inspection test method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3423096B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5141632B2 (en) * | 2009-04-23 | 2013-02-13 | 住友大阪セメント株式会社 | Wafer with inspection electrode and method of measuring refractive index |
| JP6484350B2 (en) * | 2015-11-19 | 2019-03-13 | 日本電信電話株式会社 | Silicon optical circuit |
| WO2023218533A1 (en) * | 2022-05-10 | 2023-11-16 | 日本電信電話株式会社 | Optical circuit |
-
1995
- 1995-02-02 JP JP1604995A patent/JP3423096B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08210946A (en) | 1996-08-20 |
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