JP3422991B2 - Charged particle drawing equipment - Google Patents
Charged particle drawing equipmentInfo
- Publication number
- JP3422991B2 JP3422991B2 JP2001158796A JP2001158796A JP3422991B2 JP 3422991 B2 JP3422991 B2 JP 3422991B2 JP 2001158796 A JP2001158796 A JP 2001158796A JP 2001158796 A JP2001158796 A JP 2001158796A JP 3422991 B2 JP3422991 B2 JP 3422991B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- sample
- stage
- heat
- heat conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002245 particle Substances 0.000 title claims description 59
- 238000010438 heat treatment Methods 0.000 claims description 42
- 238000001816 cooling Methods 0.000 claims description 39
- 230000020169 heat generation Effects 0.000 claims description 13
- 238000005485 electric heating Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 238000000034 method Methods 0.000 description 23
- 238000010894 electron beam technology Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000001737 promoting effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、荷電粒子描画装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle drawing apparatus.
【0002】[0002]
【従来の技術】近年、DRAMなどの半導体装置の高集
積化の要求はいよいよ高まっており、これらの半導体装
置の製造に使用するフォトマスクに描画されるパターン
の微細化、高精度化が急速に進んでいる。このような微
細パターンを高精度に描画する装置として、電子ビーム
などを利用した荷電粒子描画装置が広く用いられている
が、要求される微細化、高精度化を達成するためにいろ
いろな技術的な試みがなされて来ている。2. Description of the Related Art In recent years, the demand for higher integration of semiconductor devices such as DRAMs has been increasing, and miniaturization and high precision of patterns drawn on photomasks used for manufacturing these semiconductor devices are rapidly increasing. It is progressing. As a device for drawing such a fine pattern with high precision, a charged particle drawing device using an electron beam or the like is widely used, but various technical techniques have been used to achieve the required miniaturization and high accuracy. Various attempts have been made.
【0003】特に、描画対象となるフォトマスクの温度
管理、描画装置の試料室の温度管理、フォトマスクなど
の試料を搭載する試料ステージの温度管理などが近年非
常に重要視されてきている。In particular, temperature control of a photomask to be written, temperature control of a sample chamber of a writing apparatus, temperature control of a sample stage on which a sample such as a photomask is mounted have been very important in recent years.
【0004】図14は従来の荷電粒子描画装置の構成を
示した図である。試料室2には電子光学鏡筒1が設置さ
れており、真空化された試料室2の内部にフォトマスク
などの試料を搭載する試料ステージが設置されている。FIG. 14 is a diagram showing the configuration of a conventional charged particle drawing apparatus. An electron optical lens barrel 1 is installed in the sample chamber 2, and a sample stage for mounting a sample such as a photomask is installed inside the evacuated sample chamber 2.
【0005】試料ステージはステージの位置測定に使用
されるレーザミラー5、試料7を保持する試料保持手段
6などが設置された試料台3と、その試料台3を支持す
る試料台支持手段8をもつ第1のステージ9、第1のステ
ージ9を所定方向にガイドする第1のステージ9の案内
装置10、この案内装置10と接続され第1のステージ
9とは直角方向に移動する第2のステージ11とこれを
ガイドする第2のステージ11の案内装置12及びこれ
ら第1のステージ1、第2のステージを保持するベース
13から構成され、試料室2の内部にステージ支持手段
14により固定されている。The sample stage comprises a sample stage 3 on which a laser mirror 5 used for measuring the position of the stage, sample holding means 6 for holding the sample 7 and the like are installed, and sample stage supporting means 8 for supporting the sample stage 3. 1st stage 9 which has, the guide device 10 of the 1st stage 9 which guides 1st stage 9 in specified direction, the 2nd which is connected with this guide device 10 and moves to the 1st stage 9 at right angle The stage 11 and the guide device 12 of the second stage 11 that guides the stage 11 and the base 13 that holds the first stage 1 and the second stage are fixed to the inside of the sample chamber 2 by the stage support means 14. ing.
【0006】この試料ステージの位置はレーザミラー5
と試料室2に取り付けられた干渉計4により測定され
る。この試料ステージはステージ制御装置32により制
御された駆動装置16により連結装置15を介して第1
のステージ9を移動させ、図示していない駆動装置によ
り第2のステージを移動させて、試料7の全体にパター
ンを描画できるようにしている。The position of the sample stage is the laser mirror 5
And the interferometer 4 attached to the sample chamber 2 measures. This sample stage is moved by the drive unit 16 controlled by the stage control unit 32 via the connecting unit 15 to the first stage.
The stage 9 is moved, and the second stage is moved by a driving device (not shown) so that a pattern can be drawn on the entire sample 7.
【0007】このような荷電粒子描画装置では試料室2
の置かれている環境の温度変動により、試料室2が変形
すると試料ステージの位置測定の誤差が生じて、描画す
るパターンの位置精度が悪化するため、試料室2の壁面
に恒温水配管20を埋め込み、試料室恒温水制御装置2
1により一定温度に保たれた恒温水を試料室の壁面内に
循環させて試料室2の温度変化を極力小さくするように
している。In such a charged particle drawing apparatus, the sample chamber 2
When the sample chamber 2 is deformed due to the temperature fluctuation of the environment in which is placed, an error in the position measurement of the sample stage occurs and the position accuracy of the pattern to be drawn deteriorates. Therefore, the constant temperature water pipe 20 is attached to the wall surface of the sample chamber 2. Embedded, sample chamber constant temperature water controller 2
1, the constant temperature water kept at a constant temperature is circulated in the wall surface of the sample chamber to minimize the temperature change in the sample chamber 2.
【0008】このような方法により試料室2の温度変化
は抑えることはできるが、この試料室2の内部は真空状
態のため、内部に設置された試料ステージの温度までは
制御することは不可能である。さらに、試料ステージ
は、第1のステージ9、第2のステージ11が移動する
ため、第1のステージ9の案内装置10、第2のステー
ジ11の案内装置12などの摩擦熱による発熱が避けら
れず、描画動作など頻繁なステージ動作を行っているう
ちに、第1のステージ9、第2のステージ11の温度が
上昇し、その上に設置されている試料台3まで、熱が伝
導し試料台3の温度も上昇してしまう。これによる試料
台3の熱膨張のため設置されているレーザミラー5の取
り付け位置が変化してステージの位置測定精度が悪化し
たり、試料台3に搭載された試料7自体が試料台3の輻
射熱により温度上昇してしまい、試料7の熱膨張が生じ
て描画するパターンの位置精度が悪化してしまう。Although the temperature change of the sample chamber 2 can be suppressed by such a method, since the inside of the sample chamber 2 is in a vacuum state, it is impossible to control the temperature of the sample stage installed therein. Is. Further, since the first stage 9 and the second stage 11 move in the sample stage, heat generation due to frictional heat of the guide device 10 of the first stage 9 and the guide device 12 of the second stage 11 is avoided. However, the temperature of the first stage 9 and the second stage 11 rises during frequent stage operations such as drawing operations, and heat is conducted to the sample stage 3 installed thereon, and the sample The temperature of the table 3 also rises. Due to the thermal expansion of the sample table 3 due to this, the mounting position of the laser mirror 5 installed changes and the accuracy of position measurement of the stage deteriorates, and the sample 7 itself mounted on the sample table 3 itself radiates heat. As a result, the temperature rises, the thermal expansion of the sample 7 occurs, and the positional accuracy of the pattern to be drawn deteriorates.
【0009】このため、従来より試料室2内の試料ステ
ージのベース13に温度を一定に保たれた恒温水を循環
させて、ステージの温度上昇を防ぐ試みが行われたが、
ステージ構造物に用いられる材料の熱伝導係数が小さい
ためにベース部分の温度安定化はある程度できても移動
部分を含めた試料ステージ全体の温度を安定化させるこ
とは困難であった。また、さらに試料ステージのベース
13から可とう性の恒温水配管やヒートパイプなどを上
部の可動部分に接続し、ステージ全体の温度制御を行う
ことも考えられたが、可とう性のパイプの耐久性、変形
力などの問題から実用には至っていないものがほとんど
である。また、冷却水が接続できたとしても、ステージ
全体の熱容量が大きいために恒温水の流量、熱伝達面積
が十分でない場合には温度制御は困難である。これとは
別に、可動部分など上部機構にペリチェ素子など発熱冷
却機能を持つ素子を接続することにより温度制御するこ
とも考えられてはいるが、ペリチェ素子を駆動するには
大電流が必要で、これによる磁場変動の影響が電子ビー
ムなどに大きく影響すること、吸熱した熱の排出にやは
り冷却水などの使用が必要なことなどからやはり実用化
は難しいのが現状である。For this reason, conventionally, an attempt has been made to prevent the temperature rise of the stage by circulating constant temperature water whose temperature is kept constant through the base 13 of the sample stage in the sample chamber 2.
Since the material used for the stage structure has a small thermal conductivity coefficient, the temperature of the base portion can be stabilized to some extent, but it is difficult to stabilize the temperature of the entire sample stage including the moving portion. It was also considered that the temperature of the entire stage could be controlled by connecting flexible constant temperature water pipes and heat pipes from the base 13 of the sample stage to the upper movable parts. Most of them have not been put into practical use due to problems such as sex and deformability. Even if cooling water can be connected, temperature control is difficult if the flow rate of the constant temperature water and the heat transfer area are not sufficient because the heat capacity of the entire stage is large. Apart from this, it is also considered to control the temperature by connecting an element having a heat generation and cooling function such as a Peltier element to the upper mechanism such as a movable part, but a large current is required to drive the Peltier element, It is difficult to put it into practical use at present, because the influence of the magnetic field fluctuation due to this has a great influence on the electron beam and the like, and because it is necessary to use cooling water or the like to discharge the absorbed heat.
【0010】さらに、非常に高い位置精度を要求される
場合には試料台3に搬入された試料7の温度も問題とな
る。搬入された試料7の温度と、対向する位置にある試
料台3の温度に差がある場合には輻射により熱の交換が
行われ搬入時から描画時まで次第に試料7の温度が変化
してしまい、パターン位置誤差の要因となる。この対策
として、ステージに搬入する前に試料7の温度を試料台
3の温度にできるだけ等しくなるように温度安定化する
ことが行われているが、試料台3の温度を正確に測定す
ること、試料7を別な場所で温度安定化する際の温度セ
ンサとの誤差などの問題もあり容易ではなかった。また
試料台3に搬入された状態では試料7の温度を正確に測
定することは困難であったため、試料7と試料台3の温
度差を十分な程度にしてから描画するといったことも不
可能であった。Further, when extremely high positional accuracy is required, the temperature of the sample 7 carried into the sample table 3 also becomes a problem. When there is a difference between the temperature of the loaded sample 7 and the temperature of the sample table 3 at the opposite position, heat is exchanged by radiation, and the temperature of the sample 7 gradually changes from the loading time to the drawing time. , Which causes a pattern position error. As a countermeasure against this, the temperature of the sample 7 is stabilized so as to be as close as possible to the temperature of the sample table 3 before being carried into the stage, but the temperature of the sample table 3 should be measured accurately. It was not easy because there was a problem such as an error with the temperature sensor when stabilizing the temperature of the sample 7 at another place. Further, it is difficult to accurately measure the temperature of the sample 7 in the state where the sample 7 is loaded into the sample table 3. Therefore, it is impossible to perform drawing after the temperature difference between the sample 7 and the sample table 3 is sufficiently large. there were.
【0011】[0011]
【発明が解決しようとする課題】今後荷電粒子描画装置
に要求される高精度化に対応するためには、試料ステー
ジ、特に試料を搭載する試料台の温度制御を精密に行う
必要がある。従来、試料ステージが真空内に設置されて
いるため、温度を一定に保った恒温水による温度安定化
によるしかなかったが、ステージの熱伝導率が小さいた
め、十分な温度制御ができず、さらに可動ステージ部分
に恒温水を循環させるのが困難であった。このため、最
も精密な温度管理が必要な試料台の温度を精度良く制御
ことができなかった。In order to meet the demand for higher precision in charged particle drawing devices in the future, it is necessary to precisely control the temperature of the sample stage, especially the sample stage on which the sample is mounted. Conventionally, since the sample stage was installed in a vacuum, it could only be stabilized by constant temperature water that kept the temperature constant.However, since the thermal conductivity of the stage was small, sufficient temperature control was not possible, and It was difficult to circulate constant temperature water in the movable stage part. For this reason, the temperature of the sample stage, which requires the most precise temperature control, cannot be accurately controlled.
【0012】さらに試料を搭載する試料台の温度と描画
する試料の温度差も正確に測ることができず、試料と試
料台の温度差が所定の範囲になってから描画するといっ
たことが不可能であった。Further, the temperature difference between the temperature of the sample table on which the sample is mounted and the temperature of the sample to be drawn cannot be accurately measured, and it is impossible to draw after the temperature difference between the sample and the sample table falls within a predetermined range. Met.
【0013】本発明では高い描画位置精度を実現するた
めに、試料室内の試料ステージの試料台部分の温度を高
精度に制御可能で、さらに試料と試料台の温度差を測定
してその差をより早く必要範囲内としてから描画するこ
とが可能である荷電粒子描画装置及びこれを用いた描画
方法を提供することを目的とする。According to the present invention, in order to realize high drawing position accuracy, the temperature of the sample stage of the sample stage in the sample chamber can be controlled with high precision, and the temperature difference between the sample and the sample stage can be measured to determine the difference. It is an object of the present invention to provide a charged particle drawing apparatus and a drawing method using the charged particle drawing apparatus that can perform drawing within a necessary range earlier.
【0014】[0014]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、試料を導入する試料室と、前記試料室内
に設けられ、前記荷電粒子が前記試料面上に照射される
ように前記試料を保持可能とされた試料台と、前記試料
台上に設けられた発熱手段と、前記試料の温度を検出す
る温度測定手段と、前記試料台を搭載し、少なくとも1
方向に前記試料台を移動可能とするステージと、前記ス
テージを保持するベースと、前記ベースに設けられた冷
却手段と、前記温度測定手段の出力に基づき前記発熱手
段を制御する温度制御装置とを具備し、前記発熱手段に
よる発熱は前記荷電粒子が前記試料に照射されている間
停止されることを特徴とする荷電粒子描画装置を提供す
る。In order to achieve the above object, the present invention provides a sample chamber for introducing a sample and a sample chamber provided in the sample chamber so that the charged particles are irradiated onto the sample surface. A sample stage capable of holding the sample, a heat generating means provided on the sample stage, a temperature measuring means for detecting the temperature of the sample, and the sample stage are mounted, and at least 1
A stage that can move the sample table in a direction, a base that holds the stage, a cooling unit provided on the base, and a temperature control device that controls the heat generating unit based on the output of the temperature measuring unit. Provided is a charged particle drawing apparatus, characterized in that the heat generation by the heat generating means is stopped while the sample is being irradiated with the charged particles.
【0015】このとき、前記発熱手段は電熱装置であ
り、通電電流を前記温度制御装置により制御することで
発熱が制御されることが好ましい。At this time, it is preferable that the heat generating means is an electric heating device, and the heat generation is controlled by controlling the energizing current by the temperature control device.
【0016】また、前記発熱手段は、前記試料台上の熱
伝導板に設けられ、前記温度測定手段が前記熱伝導板に
設けられていることが好ましい。Further, it is preferable that the heat generating means is provided on a heat conducting plate on the sample table, and the temperature measuring means is provided on the heat conducting plate.
【0017】また、前記発熱手段及び前記温度測定手段
は、前記荷電粒子が前記試料に照射されている間接地さ
れることが好ましい。It is preferable that the heat generating means and the temperature measuring means are grounded while the sample is irradiated with the charged particles.
【0018】また、前記ステージに設けられた発熱手段
及び温度測定手段とを具備することが好ましい。It is preferable that the stage further comprises a heat generating means and a temperature measuring means.
【0019】また、前記試料室の温度及び前記試料台の
温度が所定の温度に略一致するようにし、前記試料を前
記試料台に導入し、前記温度測定手段により試料の温度
を測定し、前記温度が前記所定の温度から、予め定めら
れた温度範囲を越えて外れていた場合には、前記発熱手
段を発熱させるか或いは放置することにより前記温度範
囲に収まるまで待機し、前記温度測定手段の温度が前記
温度範囲に収まった場合には描画動作を開始し、所定描
画領域を描画した後に前記温度測定手段の温度を測定
し、前記温度が前記所定の温度から、予め定められた温
度範囲を越えて外れていた場合には、前記発熱手段を発
熱させるか或いは放置することにより前記温度範囲に収
まるまで待機し、前記温度測定手段の温度が前記温度範
囲に収まった場合には次の描画領域の描画に移ることが
好ましい。Further, the temperature of the sample chamber and the temperature of the sample stage are made to substantially coincide with a predetermined temperature, the sample is introduced into the sample stage, and the temperature of the sample is measured by the temperature measuring means. If the temperature deviates from the predetermined temperature by exceeding the predetermined temperature range, the heating means is caused to generate heat or left to stand by until the temperature falls within the temperature range, and the temperature measuring means When the temperature falls within the temperature range, the drawing operation is started, the temperature of the temperature measuring means is measured after drawing the predetermined drawing area, and the temperature is within the predetermined temperature range from the predetermined temperature. If the temperature is outside the range, the heating means is caused to generate heat or left to stand by until the temperature falls within the temperature range, and when the temperature of the temperature measuring means falls within the temperature range. It is preferable to move to draw the next drawing area.
【0020】また、前記試料を描画する前に、前記試料
室の温度と前記試料の温度を略一致させるようにし、前
記ベースの温度を前記試料台の温度よりも低く維持する
ようにすることが好ましい。Before the drawing of the sample, the temperature of the sample chamber and the temperature of the sample may be made substantially equal to each other so that the temperature of the base is kept lower than the temperature of the sample table. preferable.
【0021】前記試料を描画する前に、前記試料室の温
度と前記試料台の温度を略一致させるようにし、前記ス
テージの温度を前記試料台の温度よりも低くし、前記ベ
ースの温度を前記ステージの温度よりも低くすることが
好ましい。Before drawing the sample, the temperature of the sample chamber and the temperature of the sample stage are made to substantially match, the temperature of the stage is set lower than the temperature of the sample stage, and the temperature of the base is set to the above-mentioned value. It is preferably lower than the temperature of the stage.
【0022】[0022]
【発明の実施の形態】以下、本発明の実施形態を図面を
参照しつつ説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【0023】(第1の実施形態)図1は本発明の第1の
実施形態にかかる荷電粒子描画装置を示す構成図であ
る。(First Embodiment) FIG. 1 is a block diagram showing a charged particle drawing apparatus according to a first embodiment of the present invention.
【0024】図1を用いて本発明の荷電粒子描画装置の
構成について説明する。The structure of the charged particle drawing apparatus of the present invention will be described with reference to FIG.
【0025】試料室2には電子光学鏡筒1が設置されて
おり、真空化された試料室2の内部にフォトマスクなど
の試料を搭載する試料ステージが設置されている。この
電子光学鏡筒1は描画制御装置31により制御され荷電
粒子の照射を制御し、同時にステージ制御装置32によ
り試料ステージを移動させて試料7の全面にパターンを
描画する。この処理は図示されていない構成要素ととも
に全体制御装置30により制御される。An electron optical lens barrel 1 is installed in the sample chamber 2, and a sample stage for mounting a sample such as a photomask is installed inside the evacuated sample chamber 2. The electron optical lens barrel 1 is controlled by the drawing controller 31 to control the irradiation of charged particles, and at the same time, the stage controller 32 moves the sample stage to draw a pattern on the entire surface of the sample 7. This process is controlled by the overall control device 30 together with the components not shown.
【0026】試料ステージはステージの位置測定に使用
されるレーザミラー5、試料7を保持する試料保持手段
6などが設置された試料台3と、その試料台3を支持す
る試料台支持手段8をもつ第1のステージ9、第1のス
テージ9を所定方向にガイドする第1のステージ9の案
内装置10、この第1のステージの案内装置10と接続
され第1のステージ9とは直角方向に移動する第2のス
テージ11とこれをガイドする第2のステージ11の案
内装置12及びこれら第1のステージ9、第2のステー
ジ11を保持するベース13から構成され、試料室2の
内部にステージ支持手段14により固定されている。The sample stage includes a sample stage 3 on which a laser mirror 5 used for measuring the position of the stage, sample holding means 6 for holding the sample 7 and the like are installed, and sample stage supporting means 8 for supporting the sample stage 3. 1st stage 9 which has, the guide device 10 of the 1st stage 9 which guides the 1st stage 9 in a predetermined direction, and is connected with the guide device 10 of this 1st stage, and is perpendicular to the 1st stage 9. The second stage 11 that moves, a guide device 12 for the second stage 11 that guides the second stage 11, and a base 13 that holds the first stage 9 and the second stage 11 are provided inside the sample chamber 2. It is fixed by the support means 14.
【0027】なお、本実施形態では、試料ステージを互
いに直交する方向に移動する第1のステージ9と第2の
ステージ11の積層型ステージとしているが、第1のス
テージ9がベース13の平面上で2方向に移動可能な単
一ステージ構成でも本発明の効果に影響を与えないこと
をあらかじめ明記しておく。In this embodiment, the sample stage is a laminated type stage of the first stage 9 and the second stage 11 which move in the directions orthogonal to each other, but the first stage 9 is on the plane of the base 13. It should be noted in advance that even a single stage structure that can move in two directions does not affect the effects of the present invention.
【0028】さて、この試料ステージの位置はレーザミ
ラー5と試料室2に取り付けられた干渉計4により測定
される。この試料ステージはステージ制御装置32によ
り制御された駆動装置16により連結装置15を介して
第1のステージ9を移動させ、図示していない駆動装置
により第2のステージ11を移動させて、試料7の全体
にパターンを描画できるようにしている。The position of the sample stage is measured by the laser mirror 5 and the interferometer 4 attached to the sample chamber 2. In this sample stage, the first stage 9 is moved by the driving device 16 controlled by the stage control device 32 via the connecting device 15, and the second stage 11 is moved by the driving device (not shown) to move the sample 7 The pattern can be drawn over the entire area.
【0029】このような荷電粒子描画装置では試料室2
の置かれている環境の温度変動により、試料室2が変形
すると試料ステージの位置測定の誤差が生じて、描画す
るパターンの位置精度が悪化するため、試料室2の壁面
に恒温水配管20を埋め込み、試料室恒温水制御装置2
1により一定温度に保たれた恒温水を試料室の壁面内に
循環させて試料室2の温度変化を極力小さくするように
している。In such a charged particle drawing apparatus, the sample chamber 2
When the sample chamber 2 is deformed due to the temperature fluctuation of the environment in which is placed, an error in the position measurement of the sample stage occurs and the position accuracy of the pattern to be drawn deteriorates. Embedded, sample chamber constant temperature water controller 2
1, the constant temperature water kept at a constant temperature is circulated in the wall surface of the sample chamber to minimize the temperature change in the sample chamber 2.
【0030】このような方法により試料室2の温度変化
は抑えることはできる。しかしながらこの試料室2の内
部は真空状態のため、試料室2に設けられた恒温水配管
20では、内部に設置された試料ステージの温度までは
制御することは不可能である。さらに、試料ステージ
は、第1のステージ9、第2のステージ11が移動する
ため、第1のステージ9の案内装置10、第2のステー
ジ11の案内装置12などの摩擦熱による発熱が避けら
れず、描画動作など頻繁なステージ動作を行っているう
ちに、第1のステージ9、第2のステージ11の温度が
上昇し、その上に設置されている試料台3まで、熱が伝
導し試料台3の温度も上昇してしまう。これによる試料
台3の熱膨張のため設置されているレーザミラー5の取
り付け位置が変化してステージの位置測定精度が悪化し
たり、試料台3に搭載された試料7自体が試料台3の輻
射熱により温度上昇してしまい、試料7の熱膨張が生じ
て描画するパターンの位置精度が悪化してしまう。By such a method, the temperature change of the sample chamber 2 can be suppressed. However, since the inside of the sample chamber 2 is in a vacuum state, it is impossible to control the temperature of the sample stage installed therein with the constant temperature water pipe 20 provided in the sample chamber 2. Further, since the first stage 9 and the second stage 11 move in the sample stage, heat generation due to frictional heat of the guide device 10 of the first stage 9 and the guide device 12 of the second stage 11 is avoided. However, the temperature of the first stage 9 and the second stage 11 rises during frequent stage operations such as drawing operations, and heat is conducted to the sample stage 3 installed on the first stage 9 and the second stage 11 The temperature of the table 3 also rises. Due to the thermal expansion of the sample table 3 due to this, the mounting position of the laser mirror 5 installed changes and the accuracy of position measurement of the stage deteriorates, and the sample 7 itself mounted on the sample table 3 itself radiates heat. As a result, the temperature rises, the thermal expansion of the sample 7 occurs, and the positional accuracy of the pattern to be drawn deteriorates.
【0031】そこで、本発明では試料台3の試料7に対
向する位置に、ステージ温度制御装置41によって制御
され発熱可能な熱伝導板40を接続する。また、試料ス
テージのベース13の下面にステージ恒温水制御装置2
4により供給される恒温水により吸熱を行うことが可能
な冷却板22を接続する。Therefore, in the present invention, a heat conduction plate 40, which is controlled by the stage temperature control device 41 and capable of generating heat, is connected to a position of the sample table 3 facing the sample 7. Further, the stage constant temperature water control device 2 is provided on the lower surface of the base 13 of the sample stage.
The cooling plate 22 capable of absorbing heat by the constant temperature water supplied by 4 is connected.
【0032】熱伝導板40の温度はステージ温度制御装
置41によって任意の温度に設定可能であるが、この熱
伝導板40自体に吸熱機能がないため、熱伝導板40が
接続されている試料台3などの周辺部の温度が熱伝導板
40の温度より高い場合には熱伝導板40の温度を任意
の温度に制御することは不可能である。そこで冷却板2
2をベース13に接続することにより、試料ステージ全
体の熱を順次この冷却板22により吸収し、試料台3の
温度を常に熱伝導板40の温度より十分低く保って置け
ば、ある程度熱伝導板40の温度を任意温度に制御する
ことが可能となる。The temperature of the heat conducting plate 40 can be set to an arbitrary temperature by the stage temperature control device 41. However, since the heat conducting plate 40 itself does not have an endothermic function, the sample stage to which the heat conducting plate 40 is connected. When the temperature of the peripheral portion such as 3 is higher than the temperature of the heat conducting plate 40, it is impossible to control the temperature of the heat conducting plate 40 to an arbitrary temperature. So cooling plate 2
By connecting 2 to the base 13, the heat of the entire sample stage is sequentially absorbed by the cooling plate 22, and if the temperature of the sample stage 3 is always kept sufficiently lower than the temperature of the heat conducting plate 40, the heat conducting plate will have a certain degree. It is possible to control the temperature of 40 to an arbitrary temperature.
【0033】なお、本実施形態ではステージのベース1
3を冷却する装置として、恒温水を循環させる冷却板2
2をベース13に接続する構成としたが、これはベース
13の冷却装置としてベース13と分離可能な冷却板を
用いた場合、直接ベース13に恒温水を接続する方法に
比べて、試料ステージ全体をメンテナンスなどのために
試料室2から取り出す場合等に恒温水配管を取り外すこ
となく冷却板22をベース13から取り外すだけで良い
ので、配管の気密を維持しやすいこと、試料ステージの
取付け取り外しが容易であることによる。In this embodiment, the stage base 1 is used.
As a device for cooling 3, cooling plate 2 for circulating constant temperature water
2 is connected to the base 13, but when a cooling plate that is separable from the base 13 is used as a cooling device for the base 13, compared to a method in which constant temperature water is directly connected to the base 13, the entire sample stage is When removing from the sample chamber 2 for maintenance, etc., it is only necessary to remove the cooling plate 22 from the base 13 without removing the constant temperature water pipe, so it is easy to maintain the airtightness of the pipe, and it is easy to attach and detach the sample stage. Depends on.
【0034】ベース13を冷却する装置としてはこの他
に、ベース13の構造体自体に恒温水を循環させる配管
を内蔵し直接ベース13全体を冷却する方法も有効であ
る。また、恒温水などを用いずに、ヒートパイプなどで
ベース13或いは冷却板22とステージ温度制御装置4
1を接続する方法も有効である。As a device for cooling the base 13, a method of directly cooling the entire base 13 by incorporating a pipe for circulating constant temperature water in the structure of the base 13 is also effective. Further, without using constant temperature water or the like, the base 13 or the cooling plate 22 and the stage temperature control device 4 may be replaced by a heat pipe or the like.
The method of connecting 1 is also effective.
【0035】次に図2を用いて熱伝導板40の構成とそ
の作用について説明する。Next, the structure and operation of the heat conducting plate 40 will be described with reference to FIG.
【0036】図2は本発明の第1の実施形態にかかる荷
電粒子描画装置の試料台3を示す斜視図である。FIG. 2 is a perspective view showing the sample table 3 of the charged particle drawing apparatus according to the first embodiment of the present invention.
【0037】試料台3には試料支持手段6が複数個設置
されており、試料7を試料台3から離した状態で支持す
るようになっている。この試料7に対向する位置に試料
7の投影面積と同等或いは大きな面積を持つ熱伝導板4
0を設置し、試料台3に固定する。この状態で熱伝導板
40に内蔵された白金測温抵抗体などの温度測定器50
とステージ温度制御装置41に含まれる白金温度計など
の温度読込装置53により熱伝導板40の温度を測定
し、所定の温度となるように電流増幅器などの加熱制御
装置52を用いて熱伝導板40に内蔵された発熱電線5
1に通電を行い熱伝導板40の温度を上昇させ熱伝導板
40の温度を一定に維持する。この時、先に説明したよ
うに図示していないステージ冷却板により試料台3は熱
伝導板40の設定温度より低い温度に維持されているた
め、発熱電線51の通電電流を減らせば熱伝導板40の
温度を低下させることが可能となる。A plurality of sample supporting means 6 are installed on the sample table 3 so that the sample 7 is supported in a state of being separated from the sample table 3. A heat conduction plate 4 having an area equal to or larger than the projected area of the sample 7 at a position facing the sample 7.
0 is set and fixed to the sample table 3. In this state, a temperature measuring device 50 such as a platinum resistance temperature detector built in the heat conduction plate 40.
And the temperature reading device 53 such as a platinum thermometer included in the stage temperature control device 41 measures the temperature of the heat conduction plate 40, and the heating control device 52 such as a current amplifier is used to bring the temperature to a predetermined temperature. Heating wire 5 built in 40
1 is energized to raise the temperature of the heat conduction plate 40 and keep the temperature of the heat conduction plate 40 constant. At this time, since the sample stage 3 is maintained at a temperature lower than the set temperature of the heat conduction plate 40 by the stage cooling plate (not shown) as described above, the heat conduction plate can be reduced by reducing the energizing current of the heating wire 51. It is possible to lower the temperature of 40.
【0038】試料7はこの温度が一定に保たれた熱伝導
板40に主に面しているため、輻射の効果により試料7
の温度が熱伝導板40の温度に等しくなるように温度変
化する。つまり試料台3に搬入された試料7の温度が熱
伝導板40の温度より高い場合には、試料7から熱伝導
板40に熱が移動し熱伝導板40の温度が上昇するが、
温度測定器50によりその温度上昇が検出され温度調節
計などの熱伝導板温度制御装置54により発熱電線51
への通電電流が減少され試料7から移動した熱を下部の
試料台3に逃がす。同様に、試料7の温度が熱伝導板4
0より低い場合には、熱が熱伝導板40から試料7に移
動するため熱伝導板40の温度が下がるが、熱伝導板温
度制御装置54により発熱電線51の通電量が増加し熱
伝導板40の温度が維持されるとともに、試料7に熱が
移動し、試料7の温度が熱伝導板40の温度と等しくな
るのに必要な時間が短縮される。Since the sample 7 mainly faces the heat conducting plate 40 whose temperature is kept constant, the sample 7 is affected by the radiation.
The temperature changes so that the temperature becomes equal to the temperature of the heat conduction plate 40. That is, when the temperature of the sample 7 carried into the sample table 3 is higher than the temperature of the heat conduction plate 40, heat is transferred from the sample 7 to the heat conduction plate 40 and the temperature of the heat conduction plate 40 rises,
The temperature rise is detected by the temperature measuring device 50, and the heat generating wire 51 is detected by the heat conduction plate temperature control device 54 such as a temperature controller.
The current flowing to the sample 7 is reduced and the heat transferred from the sample 7 is released to the sample table 3 below. Similarly, the temperature of the sample 7 is the heat conduction plate 4
When it is lower than 0, the temperature of the heat conduction plate 40 is lowered because heat is transferred from the heat conduction plate 40 to the sample 7, but the heat conduction plate temperature control device 54 increases the energization amount of the heating wire 51 to increase the heat conduction plate. While the temperature of 40 is maintained, heat is transferred to the sample 7, and the time required for the temperature of the sample 7 to become equal to the temperature of the heat conduction plate 40 is shortened.
【0039】なお、試料7は試料支持手段6により試料
台3と接続されているが、試料7と試料支持手段6の接
触面積は極めて小さく、伝導による試料台3との熱の移
動は熱伝導板による輻射の効果に比べて十分に小さいも
のである。Although the sample 7 is connected to the sample table 3 by the sample supporting means 6, the contact area between the sample 7 and the sample supporting means 6 is extremely small, and the heat transfer between the sample 7 and the sample table 3 due to conduction is thermal conduction. It is sufficiently smaller than the effect of radiation from the plate.
【0040】さて熱伝導板40は試料台3には接続され
ているが、その接触面には間隙があり試料台3との熱の
伝導は大きくはない。したがって、熱伝導板40自体の
熱容量分の発熱、冷却を考慮すれば十分であるので、熱
伝導板の材質を銅など高熱伝導率材料を用いれば、発熱
電線を直接試料台3に貼り付けて試料台3全体の温度を
制御しようとする場合よりも応答良く温度制御すること
が可能となる。Although the heat conduction plate 40 is connected to the sample table 3, there is a gap in the contact surface thereof, and the heat conduction to the sample table 3 is not large. Therefore, it is sufficient to consider heat generation and cooling corresponding to the heat capacity of the heat conduction plate 40 itself. Therefore, if a high heat conductivity material such as copper is used as the material of the heat conduction plate, the heating wire can be directly attached to the sample table 3. It becomes possible to control the temperature with better response than in the case where the temperature of the entire sample stage 3 is controlled.
【0041】また、試料台3自体も熱伝導板40からの
輻射と接触点での熱伝導により、より温度の安定化が図
られるため、試料台3に搭載されたレーザミラー5など
の位置が試料台3の熱膨張により変位して描画位置精度
を悪化させることを防ぐことが可能である。Further, the temperature of the sample stage 3 itself is further stabilized by the radiation from the heat conduction plate 40 and the heat conduction at the contact point, so that the position of the laser mirror 5 mounted on the sample stage 3 is changed. It is possible to prevent the sample stage 3 from being displaced by thermal expansion and deteriorating the drawing position accuracy.
【0042】なお、本実施形態ではステージ温度制御装
置41に含まれる温度読込装置53と熱伝導板温度制御
装置54を独立した構成としているが、熱伝導板温度制
御装置54に温度読込装置53の機能を含んだ構成とし
ても本発明の効果に何ら影響は与えない。In the present embodiment, the temperature reading device 53 and the heat conduction plate temperature control device 54 included in the stage temperature control device 41 are independent of each other, but the heat conduction plate temperature control device 54 includes the temperature reading device 53. Even the configuration including the function does not affect the effect of the present invention.
【0043】また本実施形態では熱伝導板40から出る
発熱電線51と温度測定器50の信号線は直接ステージ
温度制御装置41に接続される形態となっているが、も
ちろん実際にはこれらの信号線、電線は試料台3から図
1に示す第1のステージ9、第2のステージ11、ベー
ス13を経て試料室2に設けられた電流導入端子などに
より大気側に導かれステージ温度制御装置41に接続さ
れていることは言うまでもない。Further, in the present embodiment, the heating wire 51 coming out of the heat conduction plate 40 and the signal line of the temperature measuring device 50 are directly connected to the stage temperature control device 41, but of course these signals are actually used. The wires and electric wires are guided to the atmosphere side from the sample table 3 through the first stage 9, the second stage 11 and the base 13 shown in FIG. Not to mention being connected to.
【0044】次に図3を用いて熱伝導板40に内蔵され
た発熱電線51、と温度測定器50などの詳細について
説明する。Next, details of the heating wire 51 built in the heat conduction plate 40, the temperature measuring device 50 and the like will be described with reference to FIG.
【0045】図3は熱伝導板の構造を示す平面図、部分
断面図及び部分拡大図である。FIG. 3 is a plan view, a partial sectional view and a partially enlarged view showing the structure of the heat conducting plate.
【0046】白金測温抵抗体などの温度測定器50は一
般的に熱伝導板40の代表温度となる中央部付近に設置
される。温度測定器50としては白金測温抵抗体の他、
サーミスタ、水晶振動子、熱電対なども用いることが可
能で、必要な温度制御精度に合わせて選択され、この種
類は本発明の効果に影響は与えない。The temperature measuring device 50 such as a platinum resistance temperature detector is generally installed near the central portion of the heat conducting plate 40 where the temperature is representative. As the temperature measuring device 50, in addition to the platinum resistance thermometer,
A thermistor, a crystal oscillator, a thermocouple, etc. can also be used and are selected according to the required temperature control accuracy, and this type does not affect the effect of the present invention.
【0047】発熱電線51としてはニクロム線などを用
いることが一般的であるが、この他タングステンなどの
高抵抗金属を用いたものの使用も可能である。ただし、
荷電粒子を扱う性質上、ステージの移動により磁場の変
動を生じないように線材自体に磁性を有しないものを選
択する必要がある。As the heating wire 51, a nichrome wire or the like is generally used, but it is also possible to use a wire made of a high resistance metal such as tungsten. However,
Due to the nature of handling charged particles, it is necessary to select a wire that does not have magnetism so that the movement of the stage does not cause a change in the magnetic field.
【0048】また、発熱電線51に通電することによ
り、発熱電線51周辺に発生する磁場の影響をなるべく
試料7付近に与えないようにするために、図3のA部拡
大図に示すように、先端で発熱電線51を折り返して、
図3のB部拡大図に示すように電流の向きが相異なり、
電流量の等しい電線51a、51bが平行に接触して内
蔵されるようにする。これにより発熱電線51の発生す
る磁場の影響を最小限に抑えることが可能となる。Further, in order to prevent the influence of the magnetic field generated around the heating wire 51 from being applied to the vicinity of the sample 7 as much as possible by energizing the heating wire 51, as shown in the enlarged view of the portion A of FIG. Fold the heating wire 51 at the tip,
As shown in the enlarged view of part B of FIG. 3, the directions of the currents are different,
The electric wires 51a and 51b having the same amount of current are made to contact each other in parallel and to be incorporated therein. This makes it possible to minimize the influence of the magnetic field generated by the heating wire 51.
【0049】また発熱電線51の敷設方法は図3に示す
ようにジグザグに敷設してできるだけ熱伝導板40全体
での温度分布が均一になるように熱伝導解析などを行っ
て決定することが望ましい。また発熱電線51の敷設方
法としてはこの他に渦巻き状に発熱電線51を敷設する
方法を取ることも可能である。Further, the method of laying the heating wire 51 is preferably determined by laying it in a zigzag manner as shown in FIG. 3 and conducting a heat conduction analysis or the like so that the temperature distribution in the entire heat conducting plate 40 is as uniform as possible. . Further, as a method of laying the heating wire 51, it is also possible to adopt a method of laying the heating wire 51 in a spiral shape.
【0050】また熱伝導板40上での温度分布が懸念さ
れる場合には図4に示すように、熱伝導板40に複数の
温度測定器50a、50b、50cを埋め込み、温度分
布を観察し、温度制御点を変更することも可能である。
これは熱伝導板40の大きさが試料7に比べて大きく、
試料7と熱伝導板40の対向位置がずれている場合に特
に有効である。この場合熱伝導板40の温度制御に使用
する温度測定器は代表点とする温度測定器50bとし
て、観測される他の温度測定器50a、50cとの温度
差分をオフセットとして熱伝導板40の設定温度とする
とよい。When the temperature distribution on the heat conducting plate 40 is concerned, a plurality of temperature measuring devices 50a, 50b, 50c are embedded in the heat conducting plate 40 and the temperature distribution is observed as shown in FIG. It is also possible to change the temperature control point.
This is because the size of the heat conduction plate 40 is larger than that of the sample 7,
It is especially effective when the facing positions of the sample 7 and the heat conduction plate 40 are deviated. In this case, the temperature measuring device used for controlling the temperature of the heat conducting plate 40 is set as the representative temperature measuring device 50b, and the temperature difference between the observed temperature measuring devices 50a and 50c is set as an offset. It is good to set the temperature.
【0051】さらに熱伝導板40上の温度の均一性を向
上させるには図5に示すように熱伝導板40の試料に対
向する面に高熱伝導率材料、たとえば金、グラファイ
ト、銀などの均熱部材61を間隙無く接合することが有
効である。さらにこの均熱部材61に温度測定器を接触
するように配置すれば一層均熱性、温度制御性が向上す
る。In order to further improve the temperature uniformity on the heat conducting plate 40, as shown in FIG. 5, the surface of the heat conducting plate 40 facing the sample is made of a material having a high heat conductivity, such as gold, graphite or silver. It is effective to join the heat members 61 without any gap. Further, if a temperature measuring device is placed in contact with the soaking member 61, the soaking property and the temperature controllability are further improved.
【0052】またこのような構成にした場合、熱伝導板
40の構造部材60の熱伝導率が若干小さくなっても効
果がそれほど減少しないため、銅などの低抵抗材料を使
用して問題となる渦電流による磁場変動を小さくするた
めに、高熱伝導率セラミクス(SiC、AlN)などの
高抵抗或いは絶縁材料を熱伝導板構造部材60として使
用することも可能となる。Further, in such a structure, even if the thermal conductivity of the structural member 60 of the heat conductive plate 40 is slightly reduced, the effect does not decrease so much, and therefore a problem arises when a low resistance material such as copper is used. In order to reduce the fluctuation of the magnetic field due to the eddy current, it is possible to use a high resistance or insulating material such as high thermal conductivity ceramics (SiC, AlN) as the heat conductive plate structural member 60.
【0053】またさらに、図6に示すように発熱体とし
てタングステン材のような高抵抗材を用いた面状発熱体
62を表面に接合することも可能である。この場合、試
料に対向する面に面状発熱体62を形成し、その下に高
熱伝導率の均熱部材61を形成する方法或いは逆に、均
熱部材61を表面に形成する構成も可能である。さらに
面状発熱体62の熱伝導率が十分に高ければ、直接熱伝
導板構造部材60の表面に形成することも可能である。Furthermore, as shown in FIG. 6, it is also possible to bond a planar heating element 62 made of a high resistance material such as tungsten as a heating element to the surface. In this case, the planar heating element 62 is formed on the surface facing the sample, and the heat equalizing member 61 having high thermal conductivity is formed under the surface heating element 62, or conversely, the heat equalizing member 61 may be formed on the surface. is there. Further, if the heat conductivity of the sheet heating element 62 is sufficiently high, it can be directly formed on the surface of the heat conducting plate structural member 60.
【0054】次の熱伝導板に内蔵された発熱電線、温度
測定器の信号線によるノイズの影響を回避する方法につ
いて図7を用いて説明する。Next, a method for avoiding the influence of noise due to the heating wire built in the heat conduction plate and the signal wire of the temperature measuring device will be described with reference to FIG.
【0055】図7は熱伝導板の制御系を示す構成図であ
る。FIG. 7 is a block diagram showing the control system of the heat conducting plate.
【0056】熱伝導板40は内部に発熱電線51、温度
測定器50を内蔵している。この発熱電線51及び温度
測定器50等に接続されている信号線の長さは非常に長
くなるため、他のノイズ源となる信号線からのノイズを
拾ってしまうのは避けられない。特に、発熱電線51及
び4線式白金測温抵抗体を用いた温度測定器50の信号
線はインピーダンスが高いためノイズを拾いやすく、こ
のノイズが荷電粒子に影響を与えてしまい、描画精度が
悪化することがある。このような場合、荷電粒子照射中
は発熱電線51への通電を遮断するだけでなく、発熱電
線51や温度測定器50に接続された信号線がアンテナ
となるのを防ぐために、発熱電線51及び温度測定器5
0に接続された信号線の一端を接地することが有効であ
る。The heat conducting plate 40 has a heating wire 51 and a temperature measuring device 50 built therein. Since the length of the signal line connected to the heating wire 51, the temperature measuring device 50 and the like becomes extremely long, it is inevitable to pick up noise from the signal line which is another noise source. In particular, the signal line of the temperature measuring device 50 using the heating wire 51 and the 4-wire platinum resistance temperature detector has a high impedance, so that noise is easily picked up, and this noise affects the charged particles, which deteriorates the drawing accuracy. I have something to do. In such a case, in order to prevent the signal line connected to the heating wire 51 or the temperature measuring device 50 from serving as an antenna, the heating wire 51 or Temperature measuring device 5
It is effective to ground one end of the signal line connected to 0.
【0057】具体的には図7に示したように、ステージ
温度制御装置41の内部に発熱電線51a、51b及び
温度測定器50の温度測定部電線1(56a,56
b)、及び温度測定部電線2(57a、57b)をスイ
ッチする回路を設け、発熱電線スイッチ制御信号58に
より、必要な場合に発熱電線51a、51bを切り替え
てアースに接地できるようにする。図7に示した構成で
は、発熱電線51a、51b両方を接地できるような構
成としているが、このどちらかを接地せず開放する構成
も考えられる。Specifically, as shown in FIG. 7, the heat generation wires 51a and 51b and the temperature measuring unit wire 1 (56a and 56) of the temperature measuring device 50 are provided inside the stage temperature control device 41.
b) and a circuit for switching the temperature measuring unit electric wires 2 (57a, 57b) are provided, and the heating electric wire switch control signal 58 switches the heating electric wires 51a and 51b to be grounded to the ground when necessary. In the configuration shown in FIG. 7, both the heating wires 51a and 51b can be grounded, but a configuration in which either one of them is opened without being grounded is also conceivable.
【0058】また温度測定器50の温度測定部電線1
(56a、56b)及び温度測定部電線2(57a、5
7b)は温度測定部電線スイッチ制御信号59により片
方が接地され、もう片方は開放されるように構成する。
これによりループのできないノイズに強い回路とするこ
とができる。The electric wire 1 for the temperature measuring unit of the temperature measuring device 50
(56a, 56b) and temperature measuring unit electric wire 2 (57a, 5)
7b) is configured such that one is grounded and the other is opened by the temperature measurement wire switch control signal 59.
This makes it possible to make a circuit resistant to noise that cannot be looped.
【0059】このスイッチの切り替え操作は図7に示し
たように、ステージ温度制御装置41に接続されたステ
ージ制御装置32或いはそのステージ制御装置32に接
続された描画制御装置31から熱伝導板温度制御装置5
4への指令で行われる構成となっている。As shown in FIG. 7, the switching operation of this switch is performed by controlling the temperature of the heat conduction plate from the stage controller 32 connected to the stage temperature controller 41 or the drawing controller 31 connected to the stage controller 32. Device 5
It is configured to be performed by a command to 4.
【0060】なお、本実施形態では発熱電線スイッチ制
御信号58及び温度測定部電線スイッチ制御信号59は
熱伝導板温度制御装置54から操作される構成となって
いるが、その先のステージ制御装置32或いは描画制御
装置31などから直接操作する構成でも同様の効果が得
られる。In the present embodiment, the heating wire switch control signal 58 and the temperature measuring section wire switch control signal 59 are operated by the heat conduction plate temperature control device 54. Alternatively, the same effect can be obtained by a configuration in which the drawing control device 31 is directly operated.
【0061】次に本発明の第2の実施形態にかかる荷電
粒子描画装置について説明する
(第2の実施形態)図9は本発明の第2の実施形態を示
す荷電粒子描画装置の構成図である。Next, a charged particle drawing apparatus according to a second embodiment of the present invention will be described (second embodiment). FIG. 9 is a block diagram of the charged particle drawing apparatus showing the second embodiment of the present invention. is there.
【0062】図9に示す荷電粒子描画装置は図1に示し
た荷電粒子描画装置の試料ステージの第1のステージ9
上に熱伝導板42を設置したものである。熱伝導板42
は、第1の実施形態で説明した熱伝導板40と同様のも
のである。熱伝導板42は、試料台3の裏面に対向する
位置に設けられている。The charged particle drawing apparatus shown in FIG. 9 is the first stage 9 of the sample stage of the charged particle drawing apparatus shown in FIG.
The heat conduction plate 42 is installed on the top. Heat conduction plate 42
Is the same as the heat conduction plate 40 described in the first embodiment. The heat conduction plate 42 is provided at a position facing the back surface of the sample table 3.
【0063】熱伝導板42の機能は、熱伝導板40と同
様であるが、試料7から離れた場所に設置されているた
め、熱伝導板40の場合のように、発熱電線からの磁場
やノイズに対して対策を考慮する必要はない。そのた
め、発熱電線の容量を大きく取ることが可能となる。The function of the heat conducting plate 42 is the same as that of the heat conducting plate 40, but since it is installed at a location away from the sample 7, the magnetic field from the heating wire and the like as in the case of the heat conducting plate 40 are used. It is not necessary to consider measures against noise. Therefore, the capacity of the heating wire can be increased.
【0064】熱伝導板42は、熱伝導板40と同様にス
テージ温度制御装置41で温度制御される。そのためス
テージ温度制御装置41は、試料台3上に設置された熱
伝導板40の制御機能に加えて熱伝導板42の温度制御
機能を追加したものとなる。そして熱伝導板40及び熱
伝導板42の設定温度は各々独立に設定可能である。The temperature of the heat conducting plate 42 is controlled by the stage temperature control device 41 like the heat conducting plate 40. Therefore, the stage temperature control device 41 is a device in which the temperature control function of the heat conduction plate 42 is added in addition to the control function of the heat conduction plate 40 installed on the sample table 3. The set temperatures of the heat conduction plate 40 and the heat conduction plate 42 can be set independently.
【0065】以下、第1のステージ3上に設けられた熱
伝導板42の機能について説明する。The function of the heat conduction plate 42 provided on the first stage 3 will be described below.
【0066】試料台3上に設けられた熱伝導板40は図
示されていない発熱電線からの磁場の影響を小さくする
ために、できるだけ通電時の電流が小さくなるように高
抵抗の発熱電線が使用される。このため熱伝導板40の
発生可能な熱量は小さく、試料台3の温度が低く熱伝導
板40から試料台3に移動する熱量が熱伝導板40の発
熱容量より大きい場合には、熱伝導板40は一定の温度
を維持することはできなくなる。The heat conduction plate 40 provided on the sample table 3 uses a high resistance heating wire so that the current when energized is as small as possible in order to reduce the influence of the magnetic field from the heating wire (not shown). To be done. Therefore, the heat generation amount of the heat conduction plate 40 is small, and when the temperature of the sample table 3 is low and the heat amount transferred from the heat conduction plate 40 to the sample table 3 is larger than the heat generation capacity of the heat conduction plate 40, the heat conduction plate 40 is heated. 40 cannot maintain a constant temperature.
【0067】一方、この問題を解決するためにベース1
3に接続された冷却板22の温度を、熱伝導板40の温
度に近づけると、第1のステージ9或いは第2のステー
ジ11が高頻度で動作した場合に、第1のステージ9の
温度が熱伝導板40の温度を超えてしまう場合がありう
る。このような状態では、試料台3は下部の第1のステ
ージ9からも加熱されることになり、試料台3の温度が
熱伝導板40の温度を超えてしまい熱伝導板40の温度
制御が不可能になる場合がある。とはいえ、冷却板22
の温度を低下させて第1のステージ9及び第2のステー
ジ11が頻繁に移動しても第1のステージ9の温度が熱
伝導板40の温度を超えないように設定した場合には先
に説明したように熱伝導板40での発熱量が不足してや
はり熱伝導板40を一定温度に維持できない事態となっ
てしまう。On the other hand, in order to solve this problem, the base 1
When the temperature of the cooling plate 22 connected to 3 is brought close to the temperature of the heat conduction plate 40, when the first stage 9 or the second stage 11 operates at a high frequency, the temperature of the first stage 9 is increased. The temperature of the heat conduction plate 40 may be exceeded. In such a state, the sample stage 3 is also heated from the lower first stage 9, and the temperature of the sample stage 3 exceeds the temperature of the heat conduction plate 40, so that the temperature control of the heat conduction plate 40 is performed. It may be impossible. However, the cooling plate 22
If the temperature of the first stage 9 and the second stage 11 are set so as not to exceed the temperature of the heat conduction plate 40 even if the first stage 9 and the second stage 11 frequently move, As described above, the heat generation amount of the heat conduction plate 40 is insufficient, and the heat conduction plate 40 cannot be maintained at a constant temperature.
【0068】この問題を解決するために、冷却板22の
温度を第1のステージ9或いは第2のステージ11の温
度により変更できるようにすることも可能ではあるが、
ステージ材質の熱伝導係数が大きくないこと、体積が大
きく熱容量が大きいことから応答良く第1のステージ9
の温度を制御することは困難である。In order to solve this problem, it is possible to change the temperature of the cooling plate 22 by changing the temperature of the first stage 9 or the second stage 11.
Since the heat conductivity coefficient of the stage material is not large, the volume is large, and the heat capacity is large, the first stage 9 has good response.
It is difficult to control the temperature of.
【0069】そこで、第1のステージ9に、熱伝導板4
0より発熱容量の大きい熱伝導板42を接続して温度制
御する構成とすれば、冷却板22の温度を第1のステー
ジ9及び第2のステージ11が頻繁に移動した場合でも
第1のステージ9の温度が熱伝導板40の温度より低く
なるように設定する。これにより、第1のステージ9の
温度が上昇し過ぎることを防ぐことができる。ここでさ
らに、ステージが移動しない場合に第1のステージ9の
温度が低下し過ぎることが無いよう、第1のステージ9
上に設けられた熱伝導板42の設定温度を冷却板22の
温度よりも高く、試料台3の温度が熱伝導板40の温度
制御下限よりも高くなるように設定すれば、ステージの
移動が少ない場合には熱伝導板42により第1のステー
ジ9ひいては試料台3に熱を供給して熱伝導板40の温
度制御を常に可能な状態に維持することができる。さら
にステージの移動が頻繁な時は熱伝導板42の発熱を減
少させて冷却板22による冷却効率を高めてやはり試料
台3上に設けられた熱伝導板40を常に一定温度で制御
可能とすることができる。Therefore, the heat conduction plate 4 is attached to the first stage 9.
When the temperature control is performed by connecting the heat conduction plate 42 having a larger heat generation capacity than 0, even if the temperature of the cooling plate 22 is frequently moved by the first stage 9 and the second stage 11, the first stage 9 The temperature of 9 is set to be lower than the temperature of the heat conduction plate 40. This can prevent the temperature of the first stage 9 from rising too high. Here, in order to prevent the temperature of the first stage 9 from dropping too much when the stage does not move, the first stage 9
If the set temperature of the heat conducting plate 42 provided above is set higher than the temperature of the cooling plate 22 and the temperature of the sample stage 3 is set higher than the temperature control lower limit of the heat conducting plate 40, the movement of the stage is prevented. If the amount is small, heat can be supplied to the first stage 9 and then the sample stage 3 by the heat conduction plate 42, and the temperature control of the heat conduction plate 40 can always be maintained in a state where it can be controlled. Further, when the stage moves frequently, the heat generation of the heat conduction plate 42 is reduced and the cooling efficiency by the cooling plate 22 is improved so that the heat conduction plate 40 provided on the sample stage 3 can be controlled at a constant temperature. be able to.
【0070】なお、この効果は第1の実施形態にかかる
荷電粒子描画装置の場合と同様に、移動するステージが
単一で平面上を2次元的に移動可能なステージ構成で
も、そのステージを図9に示す第1のステージ9とする
ことにより同様な効果が得られることは言うまでもな
い。これは以下の説明でも同様である。As in the case of the charged particle drawing apparatus according to the first embodiment, this effect can be obtained even if the moving stage is single and the stage configuration is two-dimensionally movable. It goes without saying that the same effect can be obtained by setting the first stage 9 shown in FIG. This also applies to the following description.
【0071】次に冷却板22によるステージひいては試
料台3の冷却効率を向上させる方法について図10及び
図11を用いて説明する。Next, a method of improving the cooling efficiency of the stage, that is, the sample stage 3 by the cooling plate 22 will be described with reference to FIGS.
【0072】図10は図9に示した荷電粒子描画装置の
試料ステージに冷却板22の冷却効率向上のための対策
を施した試料ステージの側面図である。FIG. 10 is a side view of the sample stage of the charged particle drawing apparatus shown in FIG. 9, in which measures are taken to improve the cooling efficiency of the cooling plate 22.
【0073】この試料ステージでは、冷却板22が接続
されたベース13或いは冷却板22から直接高熱伝導率
を有する銅やグラファイトをシート状にした伝熱促進部
材70が第2のステージ11に接続され、さらに電熱促
進部材71により第1のステージ9の上面まで接続され
ており、さらにその上の試料台3の下面まで伝熱促進部
材72が接続されている。このような構成とすることに
より、試料台3及び第1のステージ9を冷却するための
熱の伝達経路が試料台支持装置8、第1のステージ9、
第1のステージ9の案内装置10、第2のステージ1
1、第2のステージの案内装置12及びベース13の経
路のほかに、伝熱促進部材70、71、72の経路も加
わるため、最下部にある冷却板22によって上部の試料
台3及び第1のステージ9を効率良く冷却することが可
能となる。In this sample stage, a heat transfer promoting member 70 in the form of a sheet of copper or graphite having a high thermal conductivity is connected to the second stage 11 directly from the base 13 to which the cooling plate 22 is connected or the cooling plate 22. Further, the heat transfer promoting member 71 is connected to the upper surface of the first stage 9, and the heat transfer promoting member 72 is connected to the lower surface of the sample table 3 above the first stage 9. With such a configuration, the heat transfer path for cooling the sample stage 3 and the first stage 9 is provided in the sample stage support device 8, the first stage 9,
Guide device 10 for first stage 9, second stage 1
In addition to the paths of the guide device 12 and the base 13 of the first and second stages, the paths of the heat transfer promoting members 70, 71 and 72 are also added, so that the cooling plate 22 at the lowermost part allows the upper sample stage 3 and the first stage. It is possible to efficiently cool the stage 9 of FIG.
【0074】試料台3と第1のステージ9を接続する伝
熱促進部材72は試料台支持装置8の熱伝導率が十分に
高い時は不要ではあるが、それから下のステージ部分で
は、案内装置10、12での各ステージとの接触面積が
小さいため、伝熱促進部材70、71としてステージの
材質や案内装置の材質の100倍以上の熱伝導率を有す
る銅テープやグラファイトシートを用いれば、十分に冷
却板22の冷却効率を向上させることが可能である。The heat transfer promoting member 72 connecting the sample stage 3 and the first stage 9 is not necessary when the sample stage supporting device 8 has a sufficiently high thermal conductivity, but in the stage portion below it, a guide device is provided. Since the contact area with each stage at 10 and 12 is small, if a copper tape or a graphite sheet having a thermal conductivity 100 times or more that of the material of the stage or the material of the guide device is used as the heat transfer promoting members 70 and 71, It is possible to sufficiently improve the cooling efficiency of the cooling plate 22.
【0075】ただし、実際には第1のステージ9と第2
のステージ11は直角方向に移動するため図10に示し
たような接続方法は困難であり、具体的には図11に示
したようにテープ状の伝熱促進部材70、71をそれぞ
れ第2のステージ11、第1のステージ9の移動の妨げ
とならないように接続し、これらの伝熱促進部材70、
71を同じ材質の部材でつなぐ方法により行う。However, in reality, the first stage 9 and the second stage 9
Since the stage 11 of FIG. 10 moves in the right angle direction, the connection method as shown in FIG. 10 is difficult. Specifically, as shown in FIG. 11, the tape-shaped heat transfer promotion members 70 and 71 are respectively provided in the second direction. The heat transfer promoting members 70 are connected so as not to hinder the movement of the stage 11 and the first stage 9,
This is performed by the method of connecting 71 with members made of the same material.
【0076】なお、この種の試料ステージでは試料台3
或いは第1のステージ9に設置された熱伝導板40、4
2及びその他のセンサ等より出る配線を同様の機構によ
りベース13或いは図示していない試料室まで引き出す
ことが行われるため、これらの配線を支持する部材とし
て先に述べた銅テープやグラファイトシートなどを利用
した伝熱促進部材70、71を使用することも有効であ
る。また図10に示したように、試料台3に伝熱促進部
材72を接続する面のほぼ全面に銅やグラファイトなど
高熱伝導率を有する均熱部材73を間隙無く接合し、ま
た第1のステージ9にも均熱部材74を固着し、これら
均熱部材72,73に伝熱促進部材72を接続する構成
にすればさらに冷却板22による冷却効率を向上させる
ことが可能である。ただしこれら均熱部材72、73に
熱伝導板40及び熱伝導板42を接触させると、熱伝導
板40及び熱伝導板42で発生した熱が必要以上に移動
してしまうため、熱伝導板40及び熱伝導板42と均熱
部材72、73は接触しない構成とした方が良い。In this type of sample stage, the sample table 3
Alternatively, the heat conduction plates 40, 4 installed on the first stage 9
2 and other wires coming out from other sensors or the like are drawn out to the base 13 or a sample chamber (not shown) by the same mechanism, and therefore the copper tape or graphite sheet described above is used as a member for supporting these wires. It is also effective to use the utilized heat transfer promotion members 70 and 71. Further, as shown in FIG. 10, a heat equalizing member 73 having a high thermal conductivity such as copper or graphite is bonded to almost the entire surface connecting the heat transfer promoting member 72 to the sample stage 3 without any gap, and the first stage is also used. If the heat equalizing member 74 is fixed to 9 and the heat transfer promoting member 72 is connected to the heat equalizing members 72 and 73, the cooling efficiency of the cooling plate 22 can be further improved. However, when the heat conducting plate 40 and the heat conducting plate 42 are brought into contact with the heat equalizing members 72 and 73, the heat generated in the heat conducting plate 40 and the heat conducting plate 42 is moved more than necessary, so that the heat conducting plate 40. Also, it is preferable that the heat conduction plate 42 and the heat equalizing members 72 and 73 are not in contact with each other.
【0077】次に以上説明した荷電粒子描画装置を実際
に運用して描画する方法について説明する。Next, a method of actually operating and drawing the charged particle drawing apparatus described above will be described.
【0078】先に説明したように本発明の荷電粒子描画
装置では、温度を設定可能な要素として試料台3の温度
(試料台3に接続された熱伝導板40の温度)、ベース
13に接続された冷却板22などのステージ冷却装置の
温度、ステージの温度(第1のステージ9に接続された
熱伝導板42の温度)、試料室2の温度などがある。As described above, in the charged particle drawing apparatus of the present invention, the temperature of the sample stage 3 (the temperature of the heat conduction plate 40 connected to the sample stage 3) and the base 13 are connected as the elements whose temperature can be set. The temperature of the stage cooling device such as the cooled plate 22 and the like, the temperature of the stage (the temperature of the heat conduction plate 42 connected to the first stage 9), the temperature of the sample chamber 2 and the like.
【0079】まず図1に示したような荷電粒子描画装置
では、試料台3の温度は接続された熱伝導板40の温度
でほぼ設定される。この設定温度はフォトマスクなどの
試料が描画後、ステッパなどの装置で使用される際の温
度に一致するように設定するのが一般的である。そこで
ステージ温度制御装置41により熱伝導板40の温度を
所定の温度に設定し熱伝導板40の温度制御を開始す
る。First, in the charged particle drawing apparatus as shown in FIG. 1, the temperature of the sample table 3 is set substantially by the temperature of the heat conduction plate 40 connected thereto. This set temperature is generally set so as to match the temperature when a sample such as a photomask is used in an apparatus such as a stepper after drawing. Therefore, the temperature of the heat conduction plate 40 is set to a predetermined temperature by the stage temperature control device 41, and the temperature control of the heat conduction plate 40 is started.
【0080】試料ステージの外側にある試料室2の温度
は、任意の温度とすることも可能ではあるが、試料台3
の温度との間に温度差があると、輻射熱などにより試料
台3に熱の移動が生じ、試料台3及び熱伝導板40の温
度制御に影響を与えてしまう。そこで試料室2の温度を
試料台3の温度とあわせるため、試料室恒温水制御装置
21の設定温度をステージ温度制御装置41の設定温度
と等しくする。これにより試料台3の温度安定化が容易
とある。The temperature of the sample chamber 2 outside the sample stage can be any temperature, but the sample stage 3
If there is a temperature difference between the temperature of the sample table 3 and the temperature of the sample table 3, heat is transferred to the sample table 3 due to radiant heat or the like, which affects the temperature control of the sample table 3 and the heat conduction plate 40. Therefore, in order to match the temperature of the sample chamber 2 with the temperature of the sample table 3, the set temperature of the sample chamber constant temperature water controller 21 is made equal to the set temperature of the stage temperature controller 41. This facilitates temperature stabilization of the sample table 3.
【0081】この他、ステッパなどの描画後の試料を使
用する装置が同じ温度環境にある場合などには、ステッ
パなどの装置だけでなく荷電粒子描画装置についてもそ
の環境の温度下で使用されるので、試料室2の温度を周
辺の環境温度に合わせた方が荷電粒子描画装置の試料室
に温度勾配が出来ず高精度の描画が行える場合がある。
この場合はまず試料室恒温水制御装置21の温度を周辺
環境の温度と一致するように設定し、さらにその温度が
試料台に接続された熱伝導板40の温度になるようにス
テージ温度制御装置41の温度設定を行う。In addition to this, when the apparatus using the sample after drawing such as the stepper is in the same temperature environment, not only the apparatus such as the stepper but also the charged particle drawing apparatus is used under the temperature of the environment. Therefore, if the temperature of the sample chamber 2 is adjusted to the ambient environmental temperature, a temperature gradient may not be generated in the sample chamber of the charged particle drawing apparatus, and high-precision drawing may be performed.
In this case, first, the temperature of the sample chamber constant temperature water control device 21 is set so as to match the temperature of the surrounding environment, and further the stage temperature control device is set so that the temperature becomes the temperature of the heat conduction plate 40 connected to the sample stage. The temperature of 41 is set.
【0082】次に、試料台3に接続された熱伝導板40
の温度制御を容易とするために、試料台3より下のステ
ージの温度をベース13に接続された冷却板22に循環
させる恒温水の温度をステージ恒温水制御装置24によ
り先に設定した熱伝導板40の温度より低く設定する。
なお、この設定温度は試料ステージの移動による発熱に
よりステージの温度が試料台の温度を超えないように定
められる。Next, the heat conducting plate 40 connected to the sample table 3
In order to facilitate the temperature control of the sample, the temperature of the constant temperature water that circulates the temperature of the stage below the sample table 3 to the cooling plate 22 connected to the base 13 is set by the stage constant temperature water controller 24 previously. The temperature is set lower than the temperature of the plate 40.
The set temperature is set so that the temperature of the stage does not exceed the temperature of the sample table due to heat generated by the movement of the sample stage.
【0083】このように各部の温度を設定して各部の温
度が安定した状態になった後に試料の描画を行うことに
より高精度な描画が可能となる。By thus setting the temperature of each part and drawing the sample after the temperature of each part becomes stable, high-precision drawing is possible.
【0084】次に図2に示したような荷電粒子描画装置
の場合について説明する。この場合でも試料台3に接続
された熱伝導板40の温度と試料室2の温度がほぼ同じ
温度となるようにステージ温度制御装置41と試料室恒
温水制御装置21の温度設定を行うことは同じである。Next, the case of the charged particle drawing apparatus as shown in FIG. 2 will be described. Even in this case, the temperature settings of the stage temperature control device 41 and the sample chamber constant temperature water control device 21 are set so that the temperature of the heat conduction plate 40 connected to the sample stage 3 and the temperature of the sample chamber 2 are almost the same. Is the same.
【0085】この次に試料ステージが過度に冷却されな
いように第1のステージ9上に設けられた熱伝導板42
の温度を先に定めた試料台3上に設けられた熱伝導板4
0よりある程度低い温度となるようにステージ温度制御
装置41の温度設定を行う。ただし、この温度は先にも
説明したように試料台3に接続された熱伝導板40の温
度制御が可能である下限温度以上の温度である。その後
に、ステージの移動が頻繁に行われてもステージの温度
が先に定めた熱伝導板42の温度を超えないようにベー
ス13に接続された冷却板22の恒温水の温度をステー
ジ恒温水制御装置24により設定する。Next, the heat conducting plate 42 provided on the first stage 9 so that the sample stage is not excessively cooled.
Heat conduction plate 4 provided on the sample table 3 whose temperature is previously determined
The temperature of the stage temperature control device 41 is set so that the temperature is somewhat lower than zero. However, this temperature is equal to or higher than the lower limit temperature at which the temperature of the heat conduction plate 40 connected to the sample stage 3 can be controlled as described above. After that, even if the stage is moved frequently, the temperature of the constant temperature water of the cooling plate 22 connected to the base 13 is adjusted so that the temperature of the stage does not exceed the temperature of the heat conduction plate 42 previously determined. It is set by the controller 24.
【0086】これらの工程を経て各部の温度が安定化し
た後に描画を行うことにより、よりステージ移動などの
温度外乱に強く、高精度な描画が可能となる。By performing the drawing after the temperature of each part is stabilized through these steps, it is possible to perform the drawing with higher accuracy against the temperature disturbance such as the movement of the stage and the like.
【0087】次に、図1に示したような荷電粒子描画装
置で、試料台3に接続した熱伝導板40による磁場変動
或いはノイズの影響を最小限にして高い描画精度を得る
ための方法を説明する。Next, in the charged particle drawing apparatus as shown in FIG. 1, a method for obtaining high drawing accuracy by minimizing the influence of magnetic field fluctuation or noise due to the heat conduction plate 40 connected to the sample stage 3 will be described. explain.
【0088】図8は図1に示したような荷電粒子描画を
用いて試料に描画を行う際の電子ビームなどの荷電粒子
の照射のON/OFF、ステージ動作のON/OFF、
試料台の温度を決める熱伝導板の温度制御のON/OF
Fの推移のタイミングとその際の試料台に接続された熱
伝導板の温度の推移の例を示した図である。FIG. 8 shows ON / OFF of irradiation of charged particles such as an electron beam and ON / OFF of stage operation when drawing on a sample using the charged particle drawing as shown in FIG.
ON / OF of temperature control of the heat conduction plate that determines the temperature of the sample table
It is the figure which showed the timing of the transition of F, and the example of the transition of the temperature of the heat conductive plate connected to the sample stand at that time.
【0089】試料に描画を行う前に、試料を搬入したり
するためステージ動作が行われることがあるが、電子ビ
ームは照射されていないため、熱伝導板の温度制御は引
きつづき行い、試料の温度の安定化を行う。その後に試
料の描画を行うために描画開始点までステージ動作を行
うがこの間も熱伝導板の温度制御は続けることが可能で
ある。そして描画のためステージが動作し始め、電子ビ
ームが照射される直前に熱伝導板の温度制御を停止す
る。これにより描画中の熱伝導板による磁場変動に由来
する描画誤差は排除できる。Before writing on the sample, a stage operation may be performed to carry the sample in. However, since the electron beam is not irradiated, the temperature control of the heat conduction plate is continued, and Stabilize the temperature. After that, in order to draw the sample, the stage operation is performed up to the drawing start point, and the temperature control of the heat conduction plate can be continued during this time. Then, the stage starts to operate for drawing, and the temperature control of the heat conduction plate is stopped immediately before the electron beam irradiation. This makes it possible to eliminate drawing errors due to magnetic field fluctuations due to the heat conduction plate during drawing.
【0090】さらに先に図7で示したような熱伝導板の
温度制御系を有している場合には、スイッチを操作して
発熱電線や温度測定器の電線の一端を接地することによ
りこれらの配線に由来するノイズの影響も最小限とする
ことが可能である。試料への電子ビームの照射が終了す
るとステージは次の描画開始点への移動を行うが、既に
電子ビームの照射は終了しているため、照射終了直後に
熱伝導板の温度制御を再開する。この間、熱伝導板の温
度制御が停止するので熱伝導板の温度は若干低下する
が、描画制御装置31に含まれる偏向制御装置などから
の信号に基づいて温度制御の時間を極力短くすることに
より、温度低下の量を最小限にとどめることが可能であ
る。また、熱伝導板は発熱電線により加熱されるため、
特に温度を上昇させる方向には応答良く対応し,熱伝導
板の温度を設定温度に戻すことが可能である。In the case where the temperature control system for the heat conducting plate as shown in FIG. 7 is further provided, these are operated by operating the switch to ground one end of the heating wire or the wire of the temperature measuring device. It is possible to minimize the influence of noise originating from the wiring. When the irradiation of the electron beam on the sample is completed, the stage moves to the next drawing start point, but since the irradiation of the electron beam is already completed, the temperature control of the heat conduction plate is restarted immediately after the completion of the irradiation. During this time, since the temperature control of the heat conduction plate is stopped, the temperature of the heat conduction plate is slightly lowered, but by shortening the temperature control time as much as possible based on a signal from the deflection control device included in the drawing control device 31. It is possible to minimize the amount of temperature drop. Also, since the heat conduction plate is heated by the heating wire,
In particular, it responds well in the direction of increasing the temperature and can return the temperature of the heat conduction plate to the set temperature.
【0091】この他、試料に電子ビームを照射せずに電
子ビームの調整のため電子ビームを試料台3上のマーク
などに照射する場合があるが、この場合にも描画制御装
置のなかの偏向制御装置などにより電子ビームの照射の
直前に温度制御を停止し、照射終了後温度制御を再開す
るようにすればより効果的である。In addition, the electron beam may be irradiated onto a mark or the like on the sample table 3 for adjusting the electron beam without irradiating the sample with the electron beam. In this case as well, the deflection in the drawing controller is performed. It is more effective to stop the temperature control just before the irradiation of the electron beam by the control device and restart the temperature control after the irradiation is completed.
【0092】次に図1に示したような荷電粒子描画装置
で試料の描画を行う際の工程の流れについて説明する。Next, the flow of steps for drawing a sample with the charged particle drawing apparatus as shown in FIG. 1 will be described.
【0093】図12は試料を描画する際の工程を示した
フローチャート、図13はその間の熱伝導板の温度の推
移の例を示したグラフである。FIG. 12 is a flow chart showing the steps for drawing a sample, and FIG. 13 is a graph showing an example of the transition of the temperature of the heat conduction plate during the process.
【0094】まず描画に先立ち試料台に接続された熱伝
導板の温度を先に説明したような方法で設定し(S
1)、試料台の熱伝導板の温度制御を開始して熱伝導板
の温度を安定化させる(S2)。次に試料を試料台に搬
入し(S3)、その際の熱伝導板の温度を測定する(S
4)。例えば、試料の温度が熱伝導板の温度より高い場
合には図13に示すように、輻射の効果で熱伝導板の温
度が一時的に上昇する。この温度があらかじめ設定して
おいた描画可能な温度範囲内にあれば(S5)問題ない
ので描画を開始する(S7)が、熱伝導板の温度が描画
可能な温度範囲外であれば、試料の温度も当然描画可能
範囲外であるので、描画を開始せず待機する(S6)。
熱伝導板の温度制御が行われているため熱伝導板の発熱
量が低下し、熱伝導板の温度はもとの設定温度に戻って
行く。この際試料の方も熱伝導板の温度にづいていくた
め、再び熱伝導板の温度を測定し(S4)、熱伝導板の
温度が描画可能な温度範囲内ならば(S5)、描画を開
始する。First, prior to drawing, the temperature of the heat conduction plate connected to the sample stage is set by the method described above (S
1) The temperature control of the heat conduction plate of the sample stage is started to stabilize the temperature of the heat conduction plate (S2). Next, the sample is carried into the sample table (S3), and the temperature of the heat conduction plate at that time is measured (S3).
4). For example, when the temperature of the sample is higher than the temperature of the heat conduction plate, the temperature of the heat conduction plate temporarily rises due to the effect of radiation as shown in FIG. If this temperature is within the preset drawable temperature range (S5), there is no problem so that drawing is started (S7), but if the temperature of the heat conduction plate is outside the drawable temperature range, the sample Since the temperature of is also outside the drawable range, the process waits without starting drawing (S6).
Since the temperature of the heat conducting plate is controlled, the amount of heat generated by the heat conducting plate decreases, and the temperature of the heat conducting plate returns to the original set temperature. At this time, the temperature of the heat conductive plate is measured again (S4) because the sample also depends on the temperature of the heat conductive plate, and if the temperature of the heat conductive plate is within the drawable temperature range (S5), the drawing is performed. Start.
【0095】試料の描画を行うと試料は電子ビームなど
の荷電粒子のエネルギーを吸収するので温度が上昇す
る。これに応じて熱伝導板の温度も上昇してしまう場合
もあり得る。このため試料に描画するパターンがストラ
イプなどの一定の描画領域に分けられている場合などに
は、その描画領域の描画終了時に熱伝導板の温度を測定
し(S4)、先に説明したように熱伝導板の温度が描画
可能範囲にあるかを確認し(S5)、描画可能な温度範
囲内であれば次の描画領域の描画を再開する(S7)。
このような工程を繰り返し、全ての描画領域の描画を終
了すれば(S8)、試料を搬出して(S9)終了する。When the sample is drawn, the sample absorbs the energy of charged particles such as an electron beam, so that the temperature rises. In response to this, the temperature of the heat conducting plate may also rise. Therefore, when the pattern to be drawn on the sample is divided into certain drawing areas such as stripes, the temperature of the heat conduction plate is measured at the end of drawing in the drawing area (S4), and as described above. It is confirmed whether the temperature of the heat conduction plate is within the drawable range (S5), and if it is within the drawable temperature range, the drawing of the next drawing area is restarted (S7).
When the drawing of all drawing areas is completed (S8), the sample is carried out (S9), and the process is repeated.
【0096】このような工程を取ることにより常に必要
な描画精度を得るために必要な温度範囲内で試料の描画
を行うことが出来、非常に高い描画位置精度を実現でき
る。By taking such a step, it is possible to perform drawing of the sample within the temperature range necessary to always obtain the necessary drawing accuracy, and it is possible to realize extremely high drawing position accuracy.
【0097】[0097]
【発明の効果】以上説明したように、本発明によれば、
試料室内の試料ステージの試料台部分の温度を高精度に
制御可能で、さらに試料と試料台の温度差を測定してそ
の差をより早く必要範囲内としてから描画することが可
能であり、より高い描画位置精度を実現できる荷電粒子
描画装置を提供できる。As described above, according to the present invention,
It is possible to control the temperature of the sample stage part of the sample stage in the sample chamber with high accuracy, and it is also possible to measure the temperature difference between the sample and the sample stage and draw the difference as soon as possible within the required range. It is possible to provide a charged particle drawing apparatus that can realize high drawing position accuracy.
【図1】 本発明の第1の実施形態にかかる荷電粒子描
画装置の構成図。FIG. 1 is a configuration diagram of a charged particle drawing apparatus according to a first embodiment of the present invention.
【図2】 本発明の荷電粒子描画装置に用いられる試料
台の斜視図。FIG. 2 is a perspective view of a sample table used in the charged particle drawing apparatus of the present invention.
【図3】 本発明の荷電粒子描画装置の試料台に用いら
れる熱伝導板の平面図、B断面図及びA部拡大図。3A and 3B are a plan view, a B sectional view, and an enlarged view of a portion A of a heat conductive plate used for a sample table of the charged particle drawing apparatus of the invention.
【図4】 本発明の荷電粒子描画装置の試料台に用いら
れる異なる熱伝導板の平面図。FIG. 4 is a plan view of different heat conduction plates used for the sample stage of the charged particle drawing apparatus of the present invention.
【図5】 本発明の荷電粒子描画装置の試料台に用いら
れる異なる熱伝導板の断面図。FIG. 5 is a cross-sectional view of different heat conduction plates used for the sample table of the charged particle drawing apparatus of the present invention.
【図6】 本発明の荷電粒子描画装置の試料台に用いら
れる異なる熱伝導板の断面図。FIG. 6 is a cross-sectional view of different heat conduction plates used for the sample stage of the charged particle drawing apparatus of the present invention.
【図7】 本発明の荷電粒子描画装置の試料台に用いら
れる熱伝導板の制御系を示す構成図。FIG. 7 is a configuration diagram showing a control system of a heat conduction plate used in a sample stage of the charged particle drawing apparatus of the present invention.
【図8】 本発明の荷電粒子描画装置の試料台に用いら
れる熱伝導板の制御例を示すタイミング図。FIG. 8 is a timing chart showing an example of control of a heat conduction plate used in the sample stage of the charged particle drawing apparatus of the present invention.
【図9】 本発明の第2の実施形態にかかる荷電粒子描
画装置の構成図。FIG. 9 is a configuration diagram of a charged particle drawing apparatus according to a second embodiment of the present invention.
【図10】 本発明の第2の実施形態にかかる荷電粒子
描画装置の試料台ステージの側面図。FIG. 10 is a side view of the sample stage of the charged particle drawing apparatus according to the second embodiment of the present invention.
【図11】 本発明の第2の実施形態にかかる荷電粒子
描画装置の試料台ステージの斜視図。FIG. 11 is a perspective view of a sample stage of the charged particle drawing apparatus according to the second embodiment of the present invention.
【図12】 本発明の荷電粒子描画装置の描画方法を示
すフロー図。FIG. 12 is a flowchart showing a drawing method of the charged particle drawing apparatus of the present invention.
【図13】 本発明の荷電粒子描画装置の描画方法を実
施した場合の試料台の熱伝導板の温度変化を推移の例を
を示したグラフ。FIG. 13 is a graph showing an example of changes in the temperature change of the heat conductive plate of the sample stage when the drawing method of the charged particle drawing apparatus of the present invention is performed.
【図14】 従来の荷電粒子描画装置を示す構成図。FIG. 14 is a configuration diagram showing a conventional charged particle drawing apparatus.
1・・・電子光学鏡筒 2・・・試料室 3・・・試料台 6・・・試料支持手段 7・・・試料 8・・・試料台支持手段 9・・・第1のステージ 10・・・案内装置 11・・・第2のステージ 12・・・案内装置 13・・・ベース 20・・・試料室恒温水配管 22・・・ステージ冷却板 23・・・ステージ恒温水配管 40、42・・・熱伝導板 50・・・温度測定部 51、51a、51b・・・発熱電線 56a、56b・・・温度測定部電線 57a、57b・・・温度測定部電線 58・・・発熱電線スイッチ制御信号 59・・・温度測定部電線スイッチ制御信号 60・・・熱伝導板構造部材 61、73,74・・・均熱部材 62・・・面状発熱部材 70、71,72・・・伝熱促進部材 1. Electron optical lens barrel 2 ... Sample room 3 ... Sample stand 6 ... Sample support means 7 ... Sample 8 ... Sample support means 9 ... the first stage 10-guidance device 11 ... second stage 12 ... Guidance device 13 ... Base 20: Sample chamber constant temperature water pipe 22 ... Stage cooling plate 23 ... Stage constant temperature water piping 40, 42 ... Heat conduction plate 50 ... Temperature measurement unit 51, 51a, 51b ... Heating wire 56a, 56b ... Temperature measurement part electric wire 57a, 57b ... Temperature measurement part electric wire 58: Heating wire switch control signal 59 ... Temperature measuring unit wire switch control signal 60 ... Heat conduction plate structural member 61, 73, 74 ... Heat equalizing member 62 ... Sheet heating member 70, 71, 72 ... Heat transfer promoting member
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平10−241621(JP,A) 特開 平10−79344(JP,A) 特開 平8−97130(JP,A) 特開 平5−315231(JP,A) 特開 平2−134811(JP,A) 特開 昭56−83937(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/027 G03F 7/20 504 H01J 37/20 H01J 37/305 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-10-241621 (JP, A) JP-A-10-79344 (JP, A) JP-A-8-97130 (JP, A) JP-A-5- 315231 (JP, A) JP-A 2-134811 (JP, A) JP-A-56-83937 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01L 21/027 G03F 7 / 20 504 H01J 37/20 H01J 37/305
Claims (5)
に照射されるように前記試料を保持可能とされた試料台
と、 前記試料台上に設けられた発熱手段と、 前記試料の温度を検出する温度測定手段と、 前記試料台を搭載し、少なくとも1方向に前記試料台を
移動可能とするステージと、 前記ステージを保持するベースと、 前記ベースに設けられた冷却手段と、 前記温度測定手段の出力に基づき前記発熱手段を制御す
る温度制御装置とを具備し、 前記発熱手段による発熱は前記荷電粒子が前記試料に照
射されている間停止されることを特徴とする荷電粒子描
画装置。1. A sample chamber for introducing a sample, a sample stage provided in the sample chamber and capable of holding the sample so that the charged particles are irradiated onto the sample surface, and the sample stage. A heat generating means provided in the temperature measuring means, a temperature measuring means for detecting the temperature of the sample, a stage on which the sample stage is mounted and which can move the sample stage in at least one direction, and a base which holds the stage, The base is provided with a cooling unit and a temperature control device that controls the heat generating unit based on the output of the temperature measuring unit, and the heat generated by the heat generating unit is generated while the charged particles are irradiated on the sample. A charged particle drawing apparatus characterized by being stopped.
を前記温度制御装置により制御することで発熱が制御さ
れることを特徴とする請求項1記載の荷電粒子描画装
置。2. The charged particle drawing apparatus according to claim 1, wherein the heat generating means is an electric heating device, and the heat generation is controlled by controlling an energizing current by the temperature control device.
に設けられ、前記温度測定手段が前記熱伝導板に設けら
れていることを特徴とする請求項1記載の荷電粒子描画
装置。3. The charged particle drawing apparatus according to claim 1, wherein the heat generating means is provided on a heat conducting plate on the sample table, and the temperature measuring means is provided on the heat conducting plate. .
記荷電粒子が前記試料に照射されている間接地されるこ
とを特徴とする請求項2記載の荷電粒子描画装置。4. The charged particle drawing apparatus according to claim 2, wherein the heat generating means and the temperature measuring means are grounded while the charged particles are irradiated on the sample.
段がさらに設けられていることを特徴とする請求項1記
載の荷電粒子描画装置。5. The charged particle drawing apparatus according to claim 1, further comprising heating means and temperature measuring means provided on the stage.
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JP2001158796A JP3422991B2 (en) | 2001-05-28 | 2001-05-28 | Charged particle drawing equipment |
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JP2001158796A JP3422991B2 (en) | 2001-05-28 | 2001-05-28 | Charged particle drawing equipment |
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JP3422991B2 true JP3422991B2 (en) | 2003-07-07 |
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US7276709B2 (en) | 2004-04-20 | 2007-10-02 | Hitachi High-Technologies Corporation | System and method for electron-beam lithography |
JP2005327901A (en) * | 2004-05-14 | 2005-11-24 | Hitachi High-Technologies Corp | Electron beam lithography apparatus |
JP2005340719A (en) * | 2004-05-31 | 2005-12-08 | Tokyo Seimitsu Co Ltd | Stage mechanism |
US7375794B2 (en) | 2004-08-04 | 2008-05-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP6186210B2 (en) | 2013-08-26 | 2017-08-23 | 株式会社日立ハイテクノロジーズ | Stage apparatus and charged particle beam apparatus using the same |
JP2018041528A (en) * | 2014-12-10 | 2018-03-15 | 株式会社日立ハイテクノロジーズ | Stage apparatus and charged particle beam apparatus using the same |
US20210313138A1 (en) * | 2018-09-12 | 2021-10-07 | Hitachi High-Tech Corporation | Mirror electronic inspection device |
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