JP3422320B2 - Ink jet head and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ink jet head for ejecting ink droplets onto a recording medium to record an image and a method for manufacturing the same.

[0002]

2. Description of the Related Art A main part of an ink jet head is a nozzle for ejecting ink, an ink chamber provided under the nozzle for ejecting ink by applying pressure to the ink, and supplying ink to the ink chamber. It is an ink pool to do. Further, an ink flow path is provided between the ink pool and the ink chamber.

In the prior art, one in which a nozzle and an ink chamber are formed on one substrate is disclosed in Japanese Patent Laid-Open No. 9-579.
No. 81 and Japanese Patent Laid-Open No. 4-312853. In each of these, a nozzle is provided on one surface of the crystal plate, and an ink chamber, which is, for example, a tapered or bell-shaped space, is provided below the nozzle. Further, JP-A-5-309835 and JP-A-6-319.
Japanese Unexamined Patent Publication No. 14 discloses an ink chamber, an ink pool, and an ink flow path formed on one substrate.

[0004]

As described above, in the prior art, the nozzle and the ink chamber are formed on one substrate, and then the ink pool and the ink supply path formed on another substrate are joined, or The ink chamber, the ink pool, and the ink flow path are formed on one substrate, and then the nozzles formed on another substrate are joined.

For this reason, peeling (peeling) occurs at the joint portion, which causes a problem that the airtightness of the space cannot be maintained. Moreover, the accuracy and productivity of the head are reduced by the amount of the joining process.

The present invention has been made against such a background, and by providing a nozzle, an ink chamber, an ink pool, and an ink flow path, which are main parts constituting an ink jet head, on a single substrate, It is an object of the present invention to provide an inkjet head which improves the reliability and the yield of parts and is excellent in productivity. It is an object of the present invention to provide an inkjet head that can avoid electrostatic charging of nozzles.
It is an object of the present invention to provide an ink jet head that can increase the density of nozzles and can reduce the outer shape.
It is an object of the present invention to provide an inkjet head that can increase the number of inkjet heads that can be cut out from one substrate and can reduce the cost.

[0007]

The first aspect of the present invention is an ink jet head, and the features of the present invention will be described with respect to the overall structure. A nozzle for ejecting ink to a substrate and the nozzle. An ink chamber that is formed in communication with the ink chamber and that applies pressure to the filled ink, and an ink pool that supplies ink to the ink chamber through a partition wall, the partition wall having a predetermined size with respect to the substrate surface. It is formed at an angle of. The ink pool is provided adjacent to the ink chamber via a thin partition.

[0008]

As a concrete structure, one of the silicon substrates
Formed on the surface of the nozzle, an ink chamber that communicates with the nozzle and applies pressure to the filled ink , and an ink pool that supplies the ink to the ink chamber.
Le and is provided, the cross-section of the ink chamber is the substrate
Through the, and is formed on narrows as Te <br/> over path shape toward the nozzle, the cross section of the prior SL ink pool said substrate
Of the substrate is tapered so as to narrow toward the other surface of the substrate, and the other side of the substrate is covered with a thin film.
The ink and the ink pool along the one surface of the substrate.
It can be adjacent to provided et the structure I.

With this structure, the taper shape of the cross section of the ink chamber and the taper shape of the cross section of the ink pool are tapered in opposite directions, and there is an advantage that the occupied area when adjacently provided can be reduced.

[0011] Alternatively, through the above-described structure, the ink chamber and the ink pool is formed at a predetermined angle to the substrate surface provided with the front Symbol nozzle bulkhead
It can be then provided et the structure.

For each of these structures, a part of the ink chamber may be formed in a taper shape in the reverse direction.

Alternatively, a nozzle formed in a direction perpendicular to the substrate and an ink chamber communicating with the nozzle for applying a pressure to the filled ink are provided, and an ink pool for supplying the ink to the ink chamber is provided. The ink chamber and the ink pool may be provided adjacent to the ink chamber, and the wall surfaces of the ink chamber and the ink pool may be formed substantially perpendicular to the substrate. The nozzle may have a structure in which a step is provided so that the diameter is reduced from the ink chamber to the nozzle.

In each of these structures, an ink supply hole is provided between the ink chamber and the ink pool, or a lid plate provided with an ink supply groove between the ink chamber and the ink pool is bonded to the substrate. It is desirable that the structure is made. Further, it is desirable that a pressure generating mechanism that applies pressure to the ink in the ink chamber is provided on the back surface of the ink chamber.

A second aspect of the present invention is a method for manufacturing an ink jet head, which is characterized by:
A step of forming a high-concentration impurity diffusion layer on one surface of the silicon substrate; a step of forming an etching resistant mask film on the surface of the silicon substrate; and a step of etching the silicon substrate at a location where an ink chamber and an ink pool are formed. It includes a step of providing an opening, a step of forming the ink chamber and the ink pool by anisotropic etching, and a step of closing the formed ink chamber and the opening of the ink pool.

The step of providing the openings for forming the ink chamber and the ink pool is, for example, the step of providing periodic grooves. The step of closing the openings of the ink chamber and the ink pool includes, for example, the step of oxidizing the silicon remaining in the openings.

The step of forming the ink chamber and the ink pool by anisotropic etching may include the step of forming an ink supply hole between the ink chamber and the ink pool.

The step of forming the ink chamber and the ink pool by anisotropic etching includes the step of forming an ink supply hole between the ink chamber and the ink pool, and supplying ink between the ink chamber and the ink pool. It may also include a step of joining the lid plate to the silicon substrate having the holes.

The step of closing the openings of the ink chamber and the ink pool can also include the step of joining a lid plate provided with an ink supply groove between the ink chamber and the ink pool.

It is also possible to include a step of forming a piezoelectric element for applying a jet pressure to the ink in the ink chamber on the side opposite to the nozzle of the ink chamber.

According to this manufacturing method, the ink chamber and the ink pool can be formed from one surface of the substrate.

Alternatively, a step of forming high-concentration impurity diffusion layers on both surfaces of the silicon substrate, a step of forming an etching resistant mask film on the surface of the silicon substrate, and an ink pool on the surface of the silicon substrate where the nozzles are opened are A step of forming an opening for etching in a portion where the ink chamber is formed and a portion where the ink chamber on the other surface is formed; a step of forming the ink chamber and the ink pool by anisotropic etching; The step of closing the opening of the pool and the step of closing the opening of the formed ink chamber may be included.

In this case, the step of providing the opening for forming the ink chamber and the ink pool includes, for example, the step of providing a periodic groove in the opening of the ink pool.

The step of closing the openings of the ink chamber and the ink pool includes, for example, the step of oxidizing the silicon remaining in the openings of the ink pool.

The step of forming the ink chamber and the ink pool by anisotropic etching can also include the step of forming an ink supply hole between the ink chamber and the ink pool.

Alternatively, the step of forming the ink chamber and the ink pool by anisotropic etching includes the step of forming an ink supply hole between the ink chamber and the ink pool, and the step of forming the ink supply hole between the ink chamber and the ink pool. The method may also include the step of joining the lid plate to the sillcon substrate having the ink supply holes.

The step of closing the openings of the ink chamber and the ink pool can also include the step of joining a lid plate provided with an ink supply groove between the ink chamber and the ink pool.

The step of forming the ink chamber and the ink pool by anisotropic etching includes the step of forming an ink supply hole between the ink chamber and the ink pool, and the step of closing the openings of the ink chamber and the ink pool. Can also include the step of oxidizing the silicon remaining in the openings of the ink chamber.

It is desirable to include a step of forming a piezoelectric element for applying a jet pressure to the ink in the ink chamber on the side opposite to the nozzle of the ink chamber.

According to this manufacturing method, the ink chamber and the ink pool can be formed from both surfaces of the substrate. Therefore, it is possible to process the structure such that the taper shapes of the ink chamber and the ink pool described above are opposite to each other.

Alternatively, a step of forming an anti-etching protective film on both surfaces of the silicon substrate, a step of providing an opening for etching in a portion of the silicon substrate where the ink chamber and the ink pool are formed, the ink chamber and the ink. The method includes a step of forming a pool by dry etching from the opposite surface of the nozzle to a predetermined depth, and a step of closing the formed ink chamber and the opening of the ink pool.

In the step of forming the ink chamber, the step of forming the nozzle by dry etching may be performed while the step is formed at the tip of the ink chamber.

The step of forming the ink chamber and the ink pool includes the step of forming an ink supply hole between the ink chamber and the ink pool, and the silicon in which the ink supply hole is formed between the ink chamber and the ink pool. The step of bonding the lid plate to the substrate may be included.

The step of closing the openings of the ink chamber and the ink pool may include the step of joining a lid plate having an ink supply groove between the ink chamber and the ink pool.

A step of forming a piezoelectric element that applies a jet pressure to the ink in the ink chamber may be included on the side opposite to the nozzle of the ink chamber.

According to this manufacturing method, the structure in which the ink pool is provided adjacent to the ink chamber, and the wall surfaces of the ink chamber and the ink pool are formed substantially perpendicular to the substrate can be processed. .

Alternatively, a step of forming a high-concentration impurity diffusion layer on one surface of the silicon substrate, a step of forming an etching resistant mask film on the surface of the silicon substrate, and a location where an ink chamber and an ink pool of the silicon substrate are formed. A step of providing an opening for etching in the ink, a step of performing dry etching on a portion where the ink chamber is formed, a step of forming the ink chamber and the ink pool by anisotropic etching, and the formed ink chamber. And closing the opening of the ink pool.

The step of providing the opening for forming the ink chamber and the ink pool is, for example, the step of providing a periodic groove.

The step of closing the openings of the ink chamber and the ink pool includes, for example, the step of oxidizing the silicon remaining in the openings.

The step of forming the ink chamber and the ink pool by anisotropic etching may include the step of forming an ink supply hole between the ink chamber and the ink pool.

The step of forming the ink chamber and the ink pool by performing anisotropic etching includes the step of forming an ink supply hole between the ink chamber and the ink pool, and between the ink chamber and the ink pool. The method may include the step of joining the lid plate to the silicon substrate having the ink supply holes formed therein.

The step of closing the openings of the ink chamber and the ink pool can include the step of joining a lid plate having an ink supply groove provided between the ink chamber and the ink pool.

A step of forming a piezoelectric element for applying a jet pressure to the ink in the ink chamber may be included on the opposite side of the nozzle of the ink chamber.

According to this manufacturing method, the ink chamber can be processed into a structure in which a part is formed in a taper shape in the reverse direction.

By thus providing the nozzle and the ink pool on one substrate, the reliability of the head and the component yield can be improved, and an ink jet head excellent in productivity can be realized. In addition, since the conductor layer is formed of the high-concentration impurity diffusion layer in the nozzle, an effect of avoiding electrostatic charging due to friction due to wiping or the like is produced.

[0046]

[0047]

[0048]

[0049]

[0050]

[0051]

[0052]

[0053]

[0054]

[0055]

[0056]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic overall view showing the arrangement of nozzles / ink chambers and ink pools in an ink jet of this embodiment. In the figure, nozzles / ink chambers for ejecting ink are arranged adjacent to each other and connected to a common ink pool. A minimum unit matrix is formed by providing a plurality of ink pools to which nozzles / ink chambers are connected. In the embodiment shown in FIG. 1, four minimum unit matrices are provided. In the minimum unit matrix, the tributaries of the ink pools are combined to form a main stream, which is connected to an ink tank (not shown) for supplying ink. FIG. 3 is a partially enlarged view showing a part of the matrix of the minimum unit in the second, third and fifth embodiments in more detail for the first and fourth embodiments. The broken line in FIG. 3 represents the hidden ink pool (on the nozzle side).

(First Embodiment) FIG. 2 is a sectional view of the ink jet head of the first embodiment, showing the structural features of this embodiment. 2 is a sectional view taken along the line BB ′ of FIG. 3, and a partially enlarged view of FIG. 3 shows the sectional view taken along the line AA ′ of FIG. 2 from the pressure generating mechanism side (the surface side where the nozzle is not provided) viewed from the nozzle side. It is a figure. In the first embodiment, as shown in FIG.
Nozzle 100, ink chamber 101, ink pool 1
03 is formed on one substrate. Ink chamber 1
01 is a taper shape, and the tip of the taper communicates with the nozzle 100. The ink pool 103 has an inverted taper shape. In this embodiment, a Si substrate is used as the substrate material. In this case, the ink chamber 101 is composed of four crystal orientation {111} planes 105, and its cross-sectional shape is a quadrangle as shown in FIG. When the plane orientation of the substrate surface is (100), the orientations of the planes constituting the crystal orientation {111} plane 105 are (-1-1-1), (-1-11),
(-111) and (-11-1). When the plane orientation of the substrate surface is (010), the orientations of the planes constituting the crystal orientation {111} plane 105 are (-1-1-1) and (-1-1).
1), (1-11), (1-1-1), and when the plane orientation of the substrate surface is (001), (-1-1-1), (1
-1-1), (11-1), and (-11-1).

Ink chamber 101 and ink pool 10
3 are connected by a supply hole 102. The ink pool 103 is arranged so as to be adjacent to the ink chamber 101, and has a V-groove shape composed of two crystal orientation {111} planes 104. When the plane orientation of the substrate surface is (100), the orientations of the planes forming the crystal orientation {111} plane 104 are (111) and (1-1-1) or (11-1) and (1-11). Is. When the plane orientation of the substrate surface is (010), the orientations of the planes forming the crystal orientation {111} plane 104 are (111) and (-11-1) or (-111) and (11-1). , (111) and (-1-11) when the plane orientation of the substrate surface is (001), or (1-1)
1) and (-111).

Since any one of the two crystal orientation {111} planes 104 is substantially parallel to the one plane having the four crystal orientation {111} planes 105 forming the ink chamber 101, the ink chamber 101 and the ink pool 103. Can be narrowed, that is, they can be arranged at high density.

Ink chamber 101 and ink pool 10
Since the partition wall separating 3 is composed of a crystal orientation {111} plane, a wall having a high aspect ratio can be formed with high dimensional accuracy, and the distance between the ink chamber 101 and the ink pool 103 can be made extremely small. be able to.

The crystal orientation {111} plane formed by anisotropic wet etching is very smooth, and there is no problem with bubble discharging property and ink stagnation in the ink chamber 101 and the ink pool 103.

A pressure generating mechanism 107, which is wired (not shown), is arranged at the position of the chamber on the thin film 106. From the ink tank (not shown) to the ink pool 103
Supply ink to. When a voltage was applied to the pressure generating mechanism 107 to cause the ink to fly, it became clear that the same performance as that of the related art could be obtained. In this embodiment, a piezoelectric element is used for the pressure generating mechanism, but the same effect can be obtained by providing an ink heater on the thin film.

Next, a method of manufacturing the ink jet head of this embodiment will be described. FIG. 5 is a cross-sectional view illustrating the manufacturing process of the inkjet head in this embodiment. First, Si having a {100} plane orientation as shown in FIG.
The high-concentration boron diffusion layer 2 is provided on the wafer 1 (see FIG. 5).
(B)). The Si wafer 1 used here has a thickness of 300 μm, and the high-concentration boron diffusion layer 2 has a thickness of 10 μm.

Next, as shown in FIG. 5C, the Si wafer 1 is thermally oxidized to form a silicon oxide film 3 serving as an etching resistant mask material with a thickness of 2 μm on the wafer surface. In this embodiment, a silicon oxide film is used as an etching resistant mask material, but the material is not limited as long as it is a film that can withstand the Si etching liquid, such as a silicon nitride film or a metal film, and is not limited to the silicon oxide film. . This is the same in all the examples described below.

Next, a resist is applied to the Si wafer 1 and a resist mask pattern to be the nozzle 100, the ink chamber 101, and the ink pool 103 is formed at a predetermined position on the surface of the wafer by a photolithography technique and then buffered. Silicon oxide film 3 with hydrofluoric acid solution
2-1 is etched and the resist is removed.
A pattern as shown in (d) is formed.

At this time, as shown in FIG. 6, the pattern of the ink pool 103 is a combination of fine groove patterns having an inclination of 45 ° with respect to the orientation flat. The pattern has a width of 1 μm and a pitch of 11 μm. The shape of the narrow groove, which is a pattern, is such that the etching liquid enters the groove and can be etched so as to hollow out it
As long as an order beam can be left, the beam may be V-shaped as shown in FIG. 7 instead of being straight. After that, the opening for forming the ink pool 103 and the nozzle 100 are formed by Si dry etching (FIG. 5).
(E)).

Next, the ink chamber 101 and the ink pool 103 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. 5 (f). Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of anisotropic wet etching, beams having a width of 10 μm are arranged on the ink pool 103 with a gap of 1 μm therebetween.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 5 (g)), and the silicon wafer is heated at 1100 ° C. for about 3H in an atmosphere of H ₂ : O ₂ = 1: 1. 1 is thermally oxidized again (FIG. 5 (h)). This thermal oxidation newly adds Si
The thermal oxide film formed on the wafer fills the gap (1 μm) between the beams arranged on the ink pool 103.

Then, the diaphragm having the supply holes 102 formed therein is joined (FIG. 5 (i)). This time, the Si thin film is used as the diaphragm. An example of a method of manufacturing the diaphragm will be described with reference to FIG. First, as shown in FIG. 8B, a silicon oxide film 3 serving as an etching resistant mask material is formed on the surface of the Si wafer 1 to a thickness of 5 μm.

Next, a resist is applied to the Si wafer 1 to form a resist mask pattern to be the supply hole 102 at a predetermined position on the wafer surface by photolithography, and then the silicon oxide film 3 is formed by a buffered hydrofluoric acid solution. Is etched and the resist is removed, as shown in FIG.
Pattern is formed. After this, the supply hole 102
Is formed by Si dry etching (FIG. 8).
(D)). The supply hole 102 has a rectangular groove shape, and has dimensions of 100 μm in length, 30 μm in height, and 50 μm in width.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 8 (e)), and the high-concentration boron diffusion layer 2 is removed to 1
It is provided with a thickness of 0 μm (FIG. 8F). At this time, the boron diffusion layer is formed in a shape depending on the surface shape.

Next, Pyrex (registered trademark) glass is deposited to a thickness of 3 μm by a sputtering method and patterned by hydrofluoric acid (FIG. 8 (g)). Combined with a plate on which nozzles and ink pools are formed, a voltage of 400 V and 400 V is applied to perform electrostatic bonding (FIG. 8 (h)). At this time, the diaphragm side (the side coated with Pyrex glass) is the negative pole.

Next, the portion where high-concentration boron is not diffused is etched with a KOH solution or the like to complete the diaphragm.

The vibrating plate is not only Si but also glass,
The pressure of the ink chamber 101 such as resin film or metal film
Any material can be used as long as it can be efficiently transmitted. Although the electrostatic joining method is used for joining, the same effect can be obtained by adhesive joining with an adhesive.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head. Since the conductor layer can be formed by forming the high-concentration boron diffusion layer in this way, electrostatic charging can be avoided when the nozzle 100 is wiped.

Next, referring to FIG. 9, a second manufacturing method of the ink jet head of this embodiment will be described. First, the high-concentration boron diffusion layer 2 is provided on the Si wafer 1 having the {100} plane orientation as shown in FIG. 9A (FIG. 9B).
The Si wafer 1 used here has a thickness of 300 μm,
The high-concentration boron diffusion layer 2 has a thickness of 10 μm.

Next, as shown in FIG. 9C, the Si wafer 1 is thermally oxidized to form a silicon oxide film 3 serving as an etching resistant mask material with a thickness of 2 μm on the wafer surface.

Next, a resist is applied to the Si wafer 1, and a resist mask pattern to be the nozzle 100, the ink chamber 101, the supply hole 102, and the ink pool 103 is formed at a predetermined position on the wafer surface by a photolithography technique. After that, the silicon oxide film 3 is etched with a buffered hydrofluoric acid solution and the resist is removed.
A pattern as shown in (d) is formed.

At this time, as shown in FIG. 6, the pattern of the ink pool 103 is a combination of fine groove patterns having an inclination of 45 ° with respect to the orientation flat. The pattern has a width of 1 μm and a pitch of 11 μm. The shape of the narrow groove, which is a pattern, is such that the etching liquid enters the groove and can be etched so as to hollow out it
As long as an order beam can be left, the beam may be V-shaped as shown in FIG. 7 instead of being straight.

After that, the opening for forming the ink pool 103 and the nozzle 100 are formed by Si dry etching (FIG. 9E).

Next, the ink chamber 101, with the crystal orientation of the {111} crystal plane was subjected to Si anisotropic wet etching.
The supply hole 102 and the ink pool 103 are shown in FIG.
It is formed as shown in. Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of anisotropic wet etching, a beam with a width of 10 μm is 1 μm on the ink pool 103.
They are lined up with a gap of m. The pattern on the lower surface of the substrate shown in FIG. 9F is as shown in FIG. 10, and more specifically, as shown in FIG.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 9G), and the Si wafer 1 is heated at 1100 ° C. for about 3H in an atmosphere of H2: O2 = 1: 1. Thermal oxidation is performed again (FIG. 9 (h)). This thermal oxidation newly adds Si
The thermal oxide film formed on the wafer fills the gap (1 μm) between the beams arranged on the ink pool 103.

Then, the diaphragm is joined (see FIG. 9).
(I)). Here, by omitting FIGS. 8B to 8E, a diaphragm having no supply holes can be obtained. The electrostatic bonding method is as described above. Pyrex glass deposited by sputtering to a thickness of 3 μm is patterned with hydrofluoric acid and then combined with a plate having nozzles and ink pools,
A voltage of 400V is applied at 0 ° C. Then, the portion where high concentration boron is not diffused may be etched with a KOH solution or the like.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

Next, the third method of manufacturing the ink jet head of this embodiment will be described with reference to FIG. First, the high-concentration boron diffusion layers 2 are provided on both sides of the Si wafer 1 having the {100} plane orientation as shown in FIG.
(B)). The Si wafer 1 used here has a thickness of 300 μm, and the high-concentration boron diffusion layer 2 has a thickness of 10 μm.

Next, as shown in FIG. 12C, the Si wafer 1
Are thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant material.

Next, a resist was applied to the Si wafer 1, and a resist mask pattern to be the nozzle 100, the ink chamber 101, the supply hole 102, and the ink pool 103 was formed at a predetermined position on the wafer surface by a photolithography technique. After that, the silicon oxide film 3 is etched with a buffered hydrofluoric acid solution and the resist is removed.
A pattern like 2 (d) is formed.

At this time, as shown in FIG. 13, the pattern of the ink chamber 101, the supply hole 102 and the ink pool 103 is a combination of fine groove patterns having an inclination of 45 ° with respect to the orientation flat. The width of the pattern is 1
The pitch is 11 μm. It should be noted that the shape of the fine groove that is a pattern is not a straight shape as long as it can be etched so that the etching liquid enters from the groove and is hollowed out and a beam of the order of several μm can be left, as shown in FIG. In addition, a V shape may be used.

After that, the ink chamber 101 and the supply hole 1
02, an opening for forming the ink pool 103 and the nozzle 100 are formed by Si dry etching (FIG. 12E).

Next, the ink chamber 101, the supply hole 102 and the ink pool 103 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of the anisotropic wet etching, beams having a width of 10 μm are arranged on the ink chamber 101, the supply holes 102, and the ink pool 103 with a gap of 1 μm therebetween.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 12G), and the silicon wafer is heated at 1100 ° C. for about 3H in an atmosphere of H ₂ : O ₂ = 1: 1. 1 is again thermally oxidized (FIG. 12 (h)). By the thermal oxidation film newly formed on the Si wafer by this thermal oxidation, the ink chamber 101, the supply hole 102 and the ink pool 103 are formed.
The gap (1 μm) between the beams lined up is filled.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

(Second Embodiment) FIG. 14 is a sectional view of an ink jet head according to a second embodiment of the present invention, showing a BB 'section in FIG.

A nozzle 200 is provided on the surface of the substrate and communicates with the ink chamber 201. Ink chamber 20
1 is composed of four crystal orientation {111} planes 205, and its cross-sectional shape is a quadrangle.

When the plane orientation of the substrate surface is (100), the plane orientation of the crystal orientation {111} plane 105 is (-1).
-1-1), (-1-11), (-111), (-11)
-1). When the plane orientation of the substrate surface is (010),
The orientation of the planes constituting the crystal orientation {111} plane 105 is (-
1-1-1), (-1-11), (1-11), (1-
1-1) and the plane orientation of the substrate surface is (001), (-1-1-1), (1-1-1), (11-1),
It becomes (-11-1).

Ink chamber 201 and ink pool 20
3 are connected by a supply hole 202.

The ink pool 203 is the ink chamber 20.
The two crystal orientations {11
It is a V-groove shape constituted by the 1} plane 204. When the plane orientation of the substrate surface is (100), the crystal orientation {111} plane 20
The azimuths of the planes that compose 4 are (-1-1-1) and (-11
1), or (-1-11) and (-11-1).
When the plane orientation of the substrate surface is (010), the crystal orientation {11
The orientations of the planes constituting the 1} plane 104 are (-1-1-1) and (1-11), or (1-1-1) and (-1-11).
And when the plane orientation of the substrate surface is (001), (-1
(1-1) and (11-1) or (-11-1) and (1-1-1).

Since the ink chamber 201 and the ink pool 203 can be formed simultaneously from either surface of the substrate, the process cost can be greatly reduced. Furthermore, the pattern of the ink chamber 201,
Since the pattern of the ink pool 203 can be photolithographically performed at the same time, the positional deviation error between the ink chamber 201 and the ink pool 203 can be reduced.

The crystal orientation {111} plane formed by anisotropic wet etching is very smooth, and there is no problem with bubble discharge property or ink stagnation in the ink chamber 201 or the ink pool 203.

At the position of the ink chamber on the thin film 206,
A pressure generating mechanism 207 that is wired (not shown) is arranged. From the ink tank (not shown) to the ink pool 2
Ink is supplied to 03.

When a voltage was applied to the pressure generating mechanism 207 to cause the ink to fly, it became clear that the same performance as the conventional one was obtained.

In this embodiment, the piezoelectric element is used for the pressure generating mechanism, but the same effect can be obtained by providing the ink heater on the thin film.

Next, a method for manufacturing the ink jet head of this embodiment will be described. FIG. 15 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head in this embodiment. First, the high-concentration boron diffusion layer 2 is provided on the Si wafer 1 having the {100} plane orientation as shown in FIG. 15A (FIG. 15B). The Si wafer 1 used here has a thickness of 300 μm, and has a high-concentration boron diffusion layer 2
Is 10 μm thick.

Next, as shown in FIG. 15C, the Si wafer 1
Is thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant mask material.

Next, a resist is applied on the Si wafer 1, a nozzle 200, an ink chamber 201, and a resist mask pattern to become the ink pool 203 are formed at predetermined positions on the surface of the wafer by a photolithography technique, and then buffered. Silicon oxide film 3 with hydrofluoric acid solution
Is etched and the resist is removed, as shown in FIG.
Pattern is formed.

After that, the nozzle 200 is formed by Si dry etching (FIG. 15E).

Next, the ink chamber 201 and the ink pool 203 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 15G), and the diaphragm having the supply holes 202 formed therein is joined (FIG. 15H). The method of manufacturing the diaphragm with supply holes is as described in the first embodiment.

In order to form the supply hole 202 on the substrate provided with the ink chamber 201 and the ink pool 203, the supply hole pattern may be simultaneously formed at the time of FIG. 15D. In this case, since it is necessary to use a diaphragm having no supply hole, the diaphragm may be manufactured by omitting the steps (b) to (e) in FIG.

The vibrating plate is not only Si but also glass,
The pressure of the ink chamber 201 such as resin film or metal film is controlled.
Any material can be used as long as it can be efficiently transmitted. Although the electrostatic joining method is used for joining, the same effect can be obtained by adhesive joining with an adhesive.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

Next, the third method of manufacturing the ink jet head of this embodiment will be described with reference to FIG. First, the high-concentration boron diffusion layers 2 are provided on both sides of the Si wafer 1 having the {100} plane orientation as shown in FIG.
(B)). The Si wafer 1 used here has a thickness of 300 μm, and the high-concentration boron diffusion layer 2 has a thickness of 10 μm.

Next, as shown in FIG. 16C, the Si wafer 1
Is thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant mask material.

Next, a resist was applied to the Si wafer 1, and a resist mask pattern to be the nozzle 200, the ink chamber 201, the supply hole 202, and the ink pool 203 was formed at a predetermined position on the wafer surface by a photolithography technique. After that, the silicon oxide film 3 is etched with a buffered hydrofluoric acid solution and the resist is removed.
A pattern such as 6 (d) is formed.

At this time, as shown in FIG. 17, the pattern of the ink chamber 201, the supply hole 202 and the ink pool 203 is a combination of fine groove patterns having an inclination of 45 ° with respect to the orientation flat. The width of the pattern is 1
The pitch is 11 μm. It should be noted that the shape of the fine groove that is a pattern is not a straight shape as long as it can be etched so that the etching liquid enters from the groove and is hollowed out and a beam of the order of several μm can be left, as shown in FIG. In addition, a V shape may be used.

After this, the ink chamber 201 and the supply hole 2
02 and the opening for forming the ink pool 203, and the nozzle 200 are formed by Si dry etching (FIG. 16E).

Next, the ink chamber 201, the supply hole 202 and the ink pool 203 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. 16 (f). Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of anisotropic wet etching, beams having a width of 10 μm are arranged on the ink chamber 201, the supply holes 202, and the ink pool 203 with a gap of 1 μm therebetween.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 16G), and the Si wafer is heated at 1100 ° C. for about 3H in an atmosphere of H ₂ : O ₂ = 1: 1. 1 is again thermally oxidized (FIG. 16 (h)). By the thermal oxidation film newly formed on the Si wafer by this thermal oxidation, the ink chamber 201, the supply hole 202 and the ink pool 203 are formed.
The gap (1 μm) between the beams lined up is filled.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

(Third Embodiment) FIG. 18 is a sectional view of an ink jet head according to a third embodiment of the present invention, showing a BB 'section in FIG. In this embodiment, the plane orientation of the substrate does not matter. A nozzle 300 is provided on the surface of the substrate and communicates with the ink chamber 301. The ink chamber 301 is composed of a surface 305 perpendicular to the surface of the substrate, has a polygonal cross-sectional shape, and communicates with the nozzle via at least one step 308. The cross-sectional shape may be circular. The ink chamber 301 and the ink pool 303 have a supply hole 302.
Connected by. The ink pool 303 is arranged so as to be adjacent to the ink chamber 301. The ink pool 303 is composed of a surface 304 that is perpendicular to the substrate surface, and since the ink chamber 301 can be partitioned by a partition wall that is perpendicular to the substrate, the distance between the ink chamber 301 and the ink pool 303 can be narrowed. It is possible, that is, it is possible to arrange in high density.
The surface formed by dry etching is extremely smooth, and there is no problem with bubble discharge or ink stagnation in the ink chamber 301 or the ink pool 303.

At the position of the ink chamber on the thin film 306,
A pressure generating mechanism 307, which is wired (not shown), is arranged. From the ink tank (not shown) to the ink pool 3
Ink is supplied to 03. When a voltage was applied to the pressure generating mechanism 307 to cause the ink to fly, it was revealed that the same performance as that of the related art was obtained. In this example,
Although a piezoelectric element is used for the pressure generating mechanism, the same effect can be obtained by providing an ink heater on the thin film.

Next, a method of manufacturing the ink jet head of this embodiment will be described. FIG. 19 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head in this embodiment. First, a silicon nitride film 4 is formed on both sides of a 300 μm thick Si wafer 1 as shown in FIG.
Are provided with a thickness of 0.5 μm (FIG. 19B).

Next, after applying a resist to the Si wafer 1 and forming a step provided in the ink chamber 301 at a predetermined position on the wafer surface and a resist mask pattern to be the ink pool 303 by a photolithography technique, When the silicon nitride film 4 is etched by dry etching and the resist is removed, FIG.
A pattern as shown in (c) is formed.

Thereafter, as shown in FIG. 19D, a 2.5 μm thick silicon oxide film 3 is formed by CVD on the surface on which the pattern of the ink chamber 301 and the ink pool 303 is formed.

Next, the Si wafer 1 is coated again with a resist, and a resist mask pattern to become the ink chamber 301 and the ink pool 303 is formed at a predetermined place by a photolithography technique and then oxidized by a buffered hydrofluoric acid solution. When the silicon film 3 is etched and the resist is removed, a pattern as shown in FIG. 19 (e) is formed.

Deep silicon etching (dry etching) is performed by the ICP method from the surface on which the pattern of the ink chamber 301 and the ink pool 303 is formed.
In this etching, the etching selection ratio of silicon to the silicon oxide film 3 and the silicon nitride film 4 is about 100.
Therefore, when the step portion having a height of 50 μm is formed in the ink chamber 301, the silicon nitride film 4 having a thickness of 0.5 μm provided in the step of FIG. 19B is damaged (FIG. 1).
9 (f)).

After the silicon nitride film 4 is damaged, as shown in FIG.
The pattern formed in the step of 9 (e) is etched. In the ink chamber 301, etching proceeds while maintaining the step shape. After the silicon nitride film 4 is damaged, etching of 240 μm is performed (FIG. 19G).

Next, a resist is applied to the Si wafer 1 to form a resist mask pattern to serve as the nozzle 300 at a predetermined position on the wafer surface by photolithography, and then the silicon nitride film 4 and the Si wafer are dry-etched. When 1 is etched and the resist is removed, the nozzle 300 is formed as shown in FIG. The dimensions at this time are as shown in FIG.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution, the silicon nitride film 4 is removed using a phosphoric acid solution, and then the diaphragm having the supply holes 302 is bonded (FIG. 19 (i)). ). The method of manufacturing the diaphragm with supply holes is as described in the first embodiment.

In order to form the supply hole 302 on the substrate provided with the ink chamber 301 and the ink pool 303, the patterning of the supply hole may be added after FIG. 19 (g). In this case, since it is necessary to use a diaphragm having no supply hole, the diaphragm may be manufactured by omitting the steps (b) to (e) in FIG.

The vibrating plate is not only Si but also glass,
The material is not limited as long as it can efficiently transmit the pressure to the chamber 301, such as a resin film or a metal film. Although the electrostatic joining method is used for joining, the same effect can be obtained by adhesive joining with an adhesive.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

(Fourth Embodiment) FIG. 21 is a sectional view of an ink jet head according to a fourth embodiment of the present invention, showing a BB ′ section in FIG.

A nozzle 400 is provided on the surface of the substrate and communicates with the ink chamber 401. Ink chamber 40
1 is composed of eight crystal orientation {111} planes 405 and 409, and its cross-sectional shape is a quadrangle.

When the plane orientation of the substrate surface is (100), the orientation of the planes constituting the crystal orientation {111} plane 405 is (-1).
-1-1), (-1-11), (-111), (-11)
−1), and the orientations of the faces forming the crystal orientation {111} face 409 are (111), (11-1), and (1-1−).
1) and (1-11). The surface orientation of the substrate surface is (01
In the case of 0), the orientations of the planes constituting the crystal orientation {111} plane 405 are (-1-1-1), (-1-11), (1-1).
1), (1-1-1), and crystal orientation {111} plane 4
The orientations of the faces constituting 09 are (111), (-111),
(-11-1) and (11-1). When the plane orientation of the substrate surface is (001), the orientations of the planes constituting 405 are (-1-1-1), (1-1-1), (11-1),
(-11-1), and the orientations of the faces forming 409 are (111), (1-11), (-1-11), and (-11
It becomes 1).

The ink chamber 401 has a shape in which the cross-sectional area gradually increases from the nozzle 400 and gradually decreases from a certain point. Since all the portions of the ink chamber 401 where the wall surfaces meet are formed with an obtuse angle, the air bubbles are discharged well and ink stagnation does not occur.

Ink chamber 401 and ink pool 40
3 are connected by a supply hole 402. The ink pool 403 is arranged so as to be adjacent to the ink chamber 401, and has a V-groove shape composed of two crystal orientations {111} planes 404. When the plane orientation of the substrate surface is (100), the plane orientations of the crystal orientation {111} plane 404 are (111) and (1-1-1) or (11-1) and (1-11). Is. When the plane orientation of the substrate surface is (010), the orientations of the planes constituting the crystal orientation {111} plane 404 are (111) and (-11-1) or (-111) and (11-1). , (111) and (-1-11) when the plane orientation of the substrate surface is (001), or (1-1)
1) and (-111). Two crystal orientations {111}
Since any one of the surfaces 404 is substantially parallel to the one having the crystal orientation {111} plane 405 that constitutes the ink chamber 401, the ink chamber 401 and the ink pool 40
It is possible to narrow the intervals of 3, that is, it is possible to arrange them at a high density.

Ink chamber 401 and ink pool 40
Since the partition wall separating 3 is a crystal orientation {111} plane,
A wall having a high aspect ratio can be formed with high dimensional accuracy, and the ink chamber 401 and the ink pool 403 can be formed.
The distance between can be reduced.

Assuming that the bottom area of the ink chamber 401 is constant, this shape can increase the plate thickness as compared with the perfect divergent shape, so that workability such as handling is improved. Further, even if a 6-inch Si wafer is used, a standard thickness dimension can be used, so that the cost can be suppressed (a 6-inch wafer having a thickness of 300 μm is not a standard dimension).

The crystal orientation {111} plane formed by anisotropic wet etching is very smooth, and there is no problem with bubble discharge property and ink stagnation in the ink chamber 401 and the ink pool 403.

At the position of the ink chamber on the thin film 406,
A pressure generating mechanism 407 that is wired (not shown) is arranged. From the ink tank (not shown) to the ink pool 4
Ink is supplied to 03. When a voltage was applied to the pressure generating mechanism 407 to cause the ink to fly, it was clarified that the same performance as the conventional one was obtained. In this example,
Although a piezoelectric element is used for the pressure generating mechanism, the same effect can be obtained by providing an ink heater on the thin film.

Next, a method of manufacturing the ink jet head of this embodiment will be described. FIG. 22 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head in this example. First, the high-concentration boron diffusion layer 2 is provided on the Si wafer 1 having the (100) plane orientation as shown in FIG. 22A (FIG. 22B). The Si wafer 1 used here has a thickness of 485 μm, and has a high-concentration boron diffusion layer 2
Is 10 μm thick.

Next, as shown in FIG. 22C, the Si wafer 1
Is thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant mask material.

Next, a resist is applied to the Si wafer 1, a nozzle 400, an ink chamber 401, and a resist mask pattern to be the ink pool 403 are formed at predetermined positions on the wafer surface by a photolithography technique, and then buffered. Silicon oxide film 3 with hydrofluoric acid solution
Is etched and the resist is removed, as shown in FIG.
Pattern is formed.

At this time, as described above, the pattern of the ink pool 403 is a combination of thin groove patterns having an inclination of 45 ° with respect to the orientation flat. The pattern has a width of 1 μm and a pitch of 11 μm. The shape of the narrow groove, which is a pattern, is such that the etching liquid enters the groove and can be etched so as to hollow out it
As long as a custom-made beam can be left, the V shape may be used instead of the straight shape.

After that, the opening for forming the ink pool 403 and the nozzle 400 are formed by Si dry etching, and the deep opening for forming the ink chamber 401 is also formed by Si dry etching (FIG. 22).
(E)). At this time, in order to form the ink chamber 401 as shown in FIG. 22F, the dimensions must satisfy the following formula.

The nozzle size is d, the chamber forming dry etch opening size is di, the chamber forming dry etch opening depth is de (excluding the total thickness of the silicon oxide film / high-concentration boron diffusion layer), and the substrate thickness is t. When the total thickness of the high-concentration boron diffusion layer is b, de + 1/2 (d + di) .tan54.7 [deg.]> T-b In this example, di = 440 [mu] m and de = 155 [mu] m. The process of forming the ink chamber 401 will be described with reference to FIG.
The etching rate is high since the portion directly below the nozzle 400 is a protrusion.

Next, the ink chamber 401 and the ink pool 403 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of anisotropic wet etching, beams having a width of 10 μm are lined up on the ink pool 403 with a gap of 1 μm therebetween.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 22 (g)), and the Si wafer is heated at 1100 ° C. for about 3H in an atmosphere of H ₂ : O ₂ = 1: 1. 1 is again thermally oxidized (FIG. 22 (h)). The thermal oxidation film newly formed on the Si wafer by this thermal oxidation fills the gap (1 μm) between the beams arranged on the ink pool 403.

Then, the diaphragm having the supply holes 402 formed therein is joined (FIG. 22 (i)). The method of manufacturing the diaphragm with supply holes is as described in the first embodiment.

In order to form the supply hole 402 on the substrate provided with the ink chamber 401 and the ink pool 403, the supply hole pattern may be simultaneously formed at the time of FIG. 22 (d). In this case, since it is necessary to use a diaphragm having no supply hole, the diaphragm may be manufactured by omitting the steps (b) to (e) in FIG.

The vibration plate is not limited to Si, but glass,
The pressure of the ink chamber 401 such as resin film or metal film
Any material can be used as long as it can be efficiently transmitted. Although the electrostatic joining method is used for joining, the same effect can be obtained by adhesive joining with an adhesive.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

Next, with reference to FIG. 24, a third method of manufacturing the ink jet head of this embodiment will be described.

First, the high-concentration boron diffusion layers 2 are provided on both sides of the Si wafer 1 having the {100} plane orientation as shown in FIG. 24 (a) (FIG. 24 (b)). The Si wafer 1 used here has a thickness of 485 μm, and each of the high-concentration boron diffusion layers 2 has a thickness of 10 μm.

Next, as shown in FIG. 24C, the Si wafer 1
Is thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant mask material.

Next, a resist is applied to the Si wafer 1, and a resist mask pattern to be the nozzle 400, the ink chamber 401, the supply hole 402, and the ink pool 403 is formed at a predetermined position on the wafer surface by a photolithography technique. After that, the silicon oxide film 3 is etched with a buffered hydrofluoric acid solution and the resist is removed.
A pattern like 4 (d) is formed.

At this time, as shown in FIG. 13, the pattern of the ink chamber 401, the supply hole 402, and the ink pool 403 is a combination of thin groove patterns having an inclination of 45 ° with respect to the orientation flat. The width of the pattern is 1
The pitch is 11 μm. It should be noted that the shape of the fine groove that is a pattern is not a straight shape as long as it can be etched so that the etching liquid enters from the groove and is hollowed out and a beam of the order of several μm can be left, as shown in FIG. In addition, a V shape may be used.

After this, the supply hole 402 and the ink pool 40
3 and the nozzle 400 are formed by Si dry etching (FIG. 24E), and the deep opening for forming the ink chamber 401 is also formed by Si dry etching (FIG. 24F). .

At this time, in order to form the ink chamber 401 as shown in FIG. 24G, the dimensions must satisfy the following formula. The nozzle size is d, the chamber formation dry etch opening size is di, the chamber formation dry etching opening depth is de (excluding the total thickness of the silicon oxide film / high-concentration boron diffusion layer), the substrate thickness is t, and the high-concentration is high. When the total thickness of the boron diffusion layer is b, de + 1/2 (d + di) .tan54.7 °> tb In this example, di = 440 μm and de = 155 μm.

Next, an ink chamber 401, a supply hole 402 and an ink pool 403 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of anisotropic wet etching, beams having a width of 10 μm are arranged on the ink chamber 401, the supply holes 402, and the ink pool 403 with a gap of 1 μm therebetween.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 24 (h)), and the Si wafer is heated at 1100 ° C. for about 3H in an atmosphere of H ₂ : O ₂ = 1: 1. 1 is again thermally oxidized (FIG. 24 (i)). By the thermal oxidation film newly formed on the Si wafer by this thermal oxidation, the ink chamber 401, the supply hole 402 and the ink pool 403 are formed.
The gap (1 μm) between the beams lined up is filled.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

(Fifth Embodiment) FIG. 25 is a sectional view of an ink jet head according to a fifth embodiment of the present invention, showing a BB ′ section in FIG.

A nozzle 500 is provided on the surface of the substrate and communicates with the ink chamber 501. Ink chamber 50
1 is composed of eight crystal orientation {111} planes 505 and 509, and its cross-sectional shape is a quadrangle.

When the plane orientation of the substrate surface is (100), the orientation of the planes constituting the crystal orientation {111} plane 505 is (-1).
-1-1), (-1-11), (-111), (-11)
−1), and the orientations of the planes constituting the crystal orientation {111} plane 509 are (111), (11-1), and (1-1−).
1) and (1-11). The surface orientation of the substrate surface is (01
In the case of 0), the orientations of the planes constituting the crystal orientation {111} plane 505 are (-1-1-1), (-1-11), (1-1).
1), (1-1-1), and crystal orientation {111} plane 5
The orientations of the faces constituting 09 are (111), (-111),
(-11-1) and (11-1). When the plane orientation of the substrate surface is (001), the orientations of the planes constituting 505 are (-1-1-1), (1-1-1), (11-1),
(-11-1), and the orientations of the faces forming 509 are (111), (1-11), (-1-11), and (-11
It becomes 1).

The ink chamber 501 has a shape in which the cross-sectional area gradually increases from the nozzle 500 and gradually decreases from a certain point. Since the portions where the wall surfaces of the ink chamber 501 are joined together are formed with obtuse angles, the air bubbles are discharged well and ink stagnation does not occur.

Ink chamber 501 and ink pool 50
3 are connected by a supply hole 502. The ink pool 503 is arranged so as to be adjacent to the ink chamber 501, and has a V-groove shape constituted by two crystal orientation {111} planes 504. When the plane orientation of the substrate surface is (100), the orientations of the planes constituting the crystal orientation {111} plane 504 are (-1-1-1) and (-111), or (-1-1).
1) and (-11-1). The surface orientation of the substrate surface is (0
In the case of 10), the orientations of the planes constituting the crystal orientation {111} plane 504 are (-1-1-1) and (1-11), or (1-1-1) and (-1-11). Yes, if the plane orientation of the substrate surface is (001), (-1-1-1) and (11-
1), or (-11-1) and (1-1-1).

Since one of the two crystal orientation {111} planes 504 is substantially parallel to the one plane having the crystal orientation {111} plane 509 forming the ink chamber 501, the distance between the ink chamber 501 and the ink pool 503 is small. Can be narrowed, that is, can be arranged at a high density.

Ink chamber 501 and ink pool 50
Since the partition wall separating 3 is a crystal orientation {111} plane,
It is possible to form a wall having a high aspect ratio with high dimensional accuracy, and the ink chamber 501 and the ink pool 503 can be formed.
The distance between can be reduced.

Assuming that the bottom area of the ink chamber 501 is constant, this shape can increase the plate thickness as compared with the perfect divergent shape, so that workability such as handling is improved. Further, even if a 6-inch Si wafer is used, a standard thickness dimension can be used, so that the cost can be suppressed (a 6-inch wafer having a thickness of 300 μm is not a standard dimension).

The crystal orientation {111} plane formed by anisotropic wet etching is very smooth, and there is no problem with bubble discharge property or ink stagnation in the ink chamber 501 and the ink pool 503.

A pressure generating mechanism 507, which is wired (not shown), is arranged at the position of the chamber on the thin film 506. From the ink tank (not shown) to the ink pool 503
Supply ink to.

When a voltage was applied to the pressure generating mechanism 507 to cause the ink to fly, it was clarified that the same performance as the conventional one was obtained. In this embodiment, a piezoelectric element is used for the pressure generating mechanism, but the same effect can be obtained by providing an ink heater on the thin film.

Next, a method for manufacturing the ink jet head of this embodiment will be described. FIG. 26 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head in this embodiment.

First, a high-concentration boron diffusion layer 2 is provided on a Si wafer 1 having a {100} plane orientation as shown in FIG. 26 (a) (FIG. 26 (b)). The Si wafer 1 used here is 48
The thickness of the high-concentration boron diffusion layer 2 is 5 μm, and the thickness of the high-concentration boron diffusion layer 2 is 10 μm.

Next, as shown in FIG. 26C, the Si wafer 1
Is thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant mask material.

Next, a resist is applied to the Si wafer 1, a nozzle 500, an ink chamber 501, and a resist mask pattern to be the ink pool 503 are formed at predetermined positions on the surface of the wafer by a photolithography technique, and then buffered. Silicon oxide film 3 with hydrofluoric acid solution
Is etched and the resist is removed, as shown in FIG.
Pattern is formed.

Thereafter, the nozzle 500 is formed by Si dry etching, and the deep opening for forming the ink chamber 501 is also formed by Si dry etching (FIG. 26 (e)).

At this time, in order to form the ink chamber 501 as shown in FIG. 26 (f), the dimensions must satisfy the following formula. The nozzle size is d, the chamber formation dry etch opening size is di, the chamber formation dry etching opening depth is de (excluding the total thickness of the silicon oxide film / high-concentration boron diffusion layer), the substrate thickness is t, and the high-concentration is high. When the total thickness of the boron diffusion layer is b, de + 1/2 (d + di) .tan54.7 °> tb In this example, di = 440 μm and de = 155 μm.

Next, the ink chamber 501 and the ink pool 503 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 26 (g)), and the diaphragm having the supply holes 502 is joined (FIG. 26 (h)). The method of manufacturing the diaphragm with supply holes is as described in the first embodiment.

In order to form the supply hole 502 on the substrate provided with the ink chamber 501 and the ink pool 503, the supply hole pattern may be simultaneously formed at the time of FIG. 26 (d). In this case, since it is necessary to use a diaphragm having no supply hole, the diaphragm may be manufactured by omitting the steps (b) to (e) in FIG.

The vibrating plate is not only Si but also glass,
The pressure of the ink chamber 501 such as resin film or metal film
Any material can be used as long as it can be efficiently transmitted. Although the electrostatic joining method is used for joining, the same effect can be obtained by adhesive joining with an adhesive.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

Next, referring to FIG. 27, a third method of manufacturing the ink jet head of this embodiment will be described. First, the high-concentration boron diffusion layer 2 is provided on both surfaces of the Si wafer 1 having the {100} plane orientation as shown in FIG.
(B)). The Si wafer 1 used here has a thickness of 300 μm, and the high-concentration boron diffusion layer 2 has a thickness of 10 μm.

Next, as shown in FIG. 27C, the Si wafer 1
Is thermally oxidized to form a silicon oxide film 3 having a thickness of 2 μm on the surface of the wafer as an etching resistant mask material.

Next, a resist was applied to the Si wafer 1, and a resist mask pattern to be the nozzle 500, the ink chamber 501, the supply hole 502, and the ink pool 503 was formed by photolithography at a predetermined position on the wafer surface. After that, the silicon oxide film 3 is etched with a buffered hydrofluoric acid solution and the resist is removed.
A pattern such as 7 (d) is formed.

At this time, as shown in FIG. 13, the pattern of the ink chamber 501, the supply hole 502, and the ink pool 503 is a combination of thin groove patterns having an inclination of 45 ° with respect to the orientation flat. The width of the pattern is 1
The pitch is 11 μm. It should be noted that the shape of the fine groove that is a pattern is not a straight shape as long as it can be etched so that the etching liquid enters from the groove and is hollowed out and a beam of the order of several μm can be left, as shown in FIG. In addition, a V shape may be used.

After that, the openings for forming the supply holes 502 and the ink pool 503, the nozzles 500, and Si are
It is formed by dry etching (FIG. 27E), and a deep opening for forming the ink chamber 501 is also formed by Si dry etching (FIG. 27F).

At this time, in order to form the ink chamber 501 as shown in FIG. 27G, the dimensions must satisfy the following formula. The nozzle size is d, the chamber formation dry etch opening size is di, the chamber formation dry etching opening depth is de (excluding the total thickness of the silicon oxide film / high-concentration boron diffusion layer), the substrate thickness is t, and the high-concentration is high. When the total thickness of the boron diffusion layer is b, de + 1/2 (d + di) .tan54.7 °> tb In this example, di = 440 μm and de = 155 μm.

Next, the ink chamber 501, the supply hole 502 and the ink pool 503 are formed in the crystal orientation {111} plane by Si anisotropic wet etching as shown in FIG. 27 (g). Etching is performed in ethylenediamine pyrocatechol water (EPW) heated to about 100 ° C. At the end of anisotropic wet etching, beams having a width of 10 μm are arranged on the ink chamber 501, the supply holes 502, and the ink pool 503 with a gap of 1 μm therebetween.

Next, the silicon oxide film 3 is removed using a hydrofluoric acid solution (FIG. 27 (h)), and heated at 1100 ° C. for about 3H in an atmosphere of H ₂ : O ₂ = 1: 1 to obtain a Si wafer. 1 is thermally oxidized again (FIG. 27 (i)). By the thermal oxidation film newly formed on the Si wafer by this thermal oxidation, the ink chamber 501, the supply hole 502, and the ink pool 503 are formed.
The gap (1 μm) between the beams lined up is filled.

Finally, a piezoelectric element (not shown) is arranged and wired at a predetermined place and connected to an ink tank (not shown) to complete an ink jet head.

(Sixth Embodiment) Next, a sixth embodiment will be described. This sixth embodiment is an example of an inkjet head in which nozzles and ink chambers are arranged in a matrix.
Nozzle 100, ink chamber 101 and ink pool 1
The cross-sectional shape of 03 is the same as that of the first embodiment shown in FIG. FIG. 28 is a schematic view showing the entire inkjet head, and is a view of the ink chamber, the ink pool (ink flow channel tributary), and the common ink pool (ink flow channel main flow) from the surface side where the nozzles are not provided. There is no substantial difference from the example shown in FIG. FIG. 29
FIG. 4 is a diagram illustrating an angle formed by a head main scanning direction and a row direction of nozzles (or ink chambers) or a side direction of an ink pool during printing of the inkjet head.

That is, in this sixth embodiment, as shown in FIG. 2, nozzles 100 for ejecting ink droplets, ink chambers 101 provided corresponding to the respective nozzles and communicating with the nozzles, and inks for the ink chambers 101 are provided. An ink pool 103 that supplies ink, an ink supply hole 102 that connects the ink chamber 101 and the ink pool 106, and a pressure generation mechanism 107 that applies pressure to the ink chamber 101. The ink pool 103 forms a comb-shaped ink flow path so that the plurality of ink pools 103 merge and communicate with the common ink pool 108, and the common ink pool 108 communicates with an ink tank (not shown).

The nozzles 100 are arranged in a matrix of rows and columns as shown in FIG. 28, and the rows of nozzles (or ink chambers) are the main heads of the head at the time of printing as shown in FIG. It is provided so as to form a constant angle θ with the scanning direction.

Here, as shown in FIG. 4, the sectional shape of the ink chamber 101 is a quadrangle, and one of the sides forming the opening is parallel to the side of the ink pool 103. Then, the side of the ink pool 103 and the ink chamber 1
The wall surface (partition wall surface) of 01 is the crystal orientation of the silicon substrate {1
The {11} plane appears, and the axis in the longitudinal direction of the ink pool is formed parallel to this crystal orientation {111} plane.

Further, the outermost ends of the nozzles 100 (the same for the ink chambers 101) forming the rows (the outermost ends on the opposite side of the common ink pool) are arranged on a straight line perpendicular to the print scanning direction axis, and The longitudinal axis of the common ink pool 108 where the pool 103 joins is also the direction perpendicular to the print scanning direction, as in the nozzle row direction.

Next, in the matrix arrangement of nozzles, the relationship between the head resolution and the angle θ formed by the nozzle row direction (the same side of the ink pool) and the print scanning direction will be described.

Head resolution is 300dpi (or ppi)
The pitch of the nozzles adjacent to each other in the longitudinal direction of the ink pool 103 was 0.515 mm, and the axis of the ink pool was tilted by 9.46 ° with respect to the print scanning direction. In addition, the nozzle located at the outermost position is 9.
It was arranged on an axis having a 46 ° inclination.

Therefore, the angle θ formed by the side of the ink pool where the crystal orientation {111} plane appears and the print scanning direction is
At 300 dpi, θ = arcsin25.4 / 300 / 0.515 = 9.416
It becomes °.

For example, when the nozzles and the ink chambers are arranged in 36 rows and 8 columns and the row direction is tilted by 9.466 ° with respect to the main scanning direction during printing, the horizontal pitch of the nozzles (ink chambers) is The vertical pitch is 0.5681 mm and the vertical pitch is 0.6681 mm. As a whole, in one inkjet head, 288 dots are arranged in the width of 23.7055 mm in the column direction.

The method of manufacturing the ink jet head of this embodiment is the same as that described in the first embodiment, but the mask surfaces of the ink chambers and the corresponding ink pools arranged in the matrix are crystallographically oriented (crystal orientation {111 }surface)
Enching can be performed with high accuracy by applying the anisotropic etching in parallel with.

In this embodiment, since the nozzles, the ink chambers, and the ink pools can be efficiently arranged with high density by using the crystal orientation plane, the ink jet head can be downsized. In addition, when cutting out the outer shape of the inkjet head to obtain the outer shape along the main scanning direction, the residual amount for the functions required for printing such as nozzles and ink pools can be minimized. The manufacturing cost can be reduced by reducing the loss.

Further, since the nozzle row direction is arranged perpendicular to the printing direction with respect to the printing direction, ink can be ejected from the nozzles simultaneously in the row direction, and the nozzles in the row direction are Ink ejection control in the column direction is simpler than in the case of being inclined with respect to the printing direction. In addition, since the print ends (the left print start point on the paper surface) are aligned, the amount of movement of the head during printing is minimized.

[0207]

As described above, according to the present invention,
By providing the nozzle and the ink pool on one substrate, it is possible to improve the reliability of the head and the yield of parts, and to realize an inkjet head having excellent productivity. It is possible to avoid electrostatic charge of the nozzle. Moreover, since the nozzles and the ink chambers can be arranged at a high density, the high-resolution inkjet head can be downsized, and the manufacturing cost can be reduced.

[Brief description of drawings]

FIG. 1 is a schematic view showing an entire inkjet head.

FIG. 2 is a sectional view of an inkjet according to the first embodiment of the present invention.

FIG. 3 is a partially enlarged view of an inkjet head according to first and fourth embodiments.

FIG. 4 is a partially enlarged view of an inkjet head according to second, third and fifth embodiments.

FIG. 5 is an inkjet head 1 according to the first embodiment of the present invention.
Sectional drawing explaining the manufacturing process of the th.

FIG. 6 is a diagram showing a pattern of a straight ink pool.

FIG. 7 is a diagram showing a pattern of a V-shaped ink pool.

FIG. 8 is a diagram illustrating a method of manufacturing a diaphragm.

FIG. 9 is an inkjet head 2 of the first embodiment of the present invention.
Sectional drawing explaining the manufacturing process of the th.

FIG. 10 is a view showing the pattern shape of the lower surface of the substrate in the second manufacturing process.

FIG. 11 is a view showing the state of the lower surface of the substrate in the second manufacturing process.

FIG. 12 is a sectional view for explaining the third manufacturing process of the inkjet head of the first embodiment of the present invention.

FIG. 13 is a view showing a pattern for forming chambers and supply holes in the third manufacturing process.

FIG. 14 is a sectional view of an inkjet head according to a second embodiment of the present invention.

FIG. 15 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head of the second embodiment of the present invention.

FIG. 16 is a sectional view illustrating a third manufacturing process of the inkjet head according to the second embodiment of the present invention.

FIG. 17 is a view showing the pattern of chambers, supply holes, and ink pools in the third manufacturing process of the second embodiment of the present invention.

FIG. 18 is a sectional view of an inkjet head according to a third embodiment of the present invention.

FIG. 19 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head of the third embodiment of the present invention.

FIG. 20 is a dimensional view of the vicinity of the nozzle according to the third embodiment of the present invention.

FIG. 21 is a sectional view of an inkjet head according to a fourth embodiment of the present invention.

FIG. 22 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head of the fourth embodiment of the present invention.

FIG. 23 is a diagram showing a process of forming a chamber according to the fourth embodiment of the present invention.

FIG. 24 is a sectional view for explaining the third manufacturing process of the inkjet head of the fourth embodiment of the present invention.

FIG. 25 is a sectional view of an inkjet head according to a fifth embodiment of the present invention.

FIG. 26 is a cross-sectional view illustrating the first and second manufacturing steps of the inkjet head of the fifth embodiment of the present invention.

FIG. 27 is a sectional view showing a third manufacturing process of the inkjet head of the fifth embodiment of the present invention.

FIG. 28 is a schematic view showing an entire inkjet head according to a sixth embodiment of the present invention.

FIG. 29 is a diagram illustrating an angle formed by an ink pool or an ink chamber row and a main scanning direction.

[Explanation of symbols]

1 Si Wafer 2 High Concentration Boron Diffusion Layer 3 Silicon Oxide Film 4 Silicon Nitride Film 100, 200, 300, 400, 500 Nozzle 101, 201, 301, 401, 501 Ink Chamber 102, 202, 302, 402, 502 Supply Hole 103 , 203, 303, 403, 503 ink pools 104, 204, 304, 404, 504, 105, 2
05, 305, 405, 409, 509 Crystal orientation <111> plane 106, 20
6, 306, 406, 506 Thin film 107, 207, 307, 407, 507 Pressure generation mechanism 108 Common ink pool 308 Step

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Akimoto 5-7-1, Shiba, Minato-ku, Tokyo NEC Corporation (72) Inventor Yasuhiro Otsuka 5-7-1, Shiba, Minato-ku, Tokyo NEC (56) References JP 2000-168076 (JP, A) JP 5-155030 (JP, A) JP 9-248914 (JP, A) JP 3-297653 (JP, A) ) JP-A-11-28820 (JP, A) International Publication 97/0334769 (WO, A1) (58) Fields investigated (Int.Cl. ⁷ , DB name) B41J 2/16 B41J 2/045 B41J 2/055

Claims (10)

(57) [Claims] And 1. A silicon While Roh <br/> nozzle formed on the surface of the substrate, an ink chamber provided a pressure to the ink that is formed filled communicated with the nozzle, Lee ink in the ink chamber ink pool and is provided for supplying, cross section of the ink chamber through said substrate, and prior to
Tapered so that it becomes narrower toward the nozzle.
And the cross section of the ink pool faces the other side of the substrate.
Taper so that the other side of the substrate is closed by a thin film,
The ink pool along the one surface of the substrate
An inkjet head characterized by being provided adjacent to each other . 2. The inkjet head according to claim 1.
In the ink chamber and the ink pool,
Formed at a predetermined angle with respect to the substrate surface on which the
The device according to claim 1, wherein the device is provided through a partition wall.
Inkjet head mounted . 3. High-concentration impurity diffusion on both sides of a silicon substrate
Forming a layer and forming an etching resistant mask film on the surface of the silicon substrate.
And the ink pool on the surface of the silicon substrate where the nozzle is opened.
Where the ink is formed and the ink chamber on the other side is formed
Process to provide an opening for etching in the area to be etched
And anisotropically etch the ink chamber and ink pool
And forming by performing the steps of closing the opening of the formed ink pool, and a step of closing the opening of the formed ink chamber
A method for manufacturing an inkjet head, comprising: 4. An ink chamber and an ink pool are formed.
The step of providing the opening for
The ink according to claim 3, further comprising the step of providing a periodic groove in the ink.
Jet head manufacturing method. 5. An ink chamber and an ink pool are opened.
The process of closing the mouth is done by removing the residue from the ink remaining in the opening of the ink pool.
The ink jet ink according to claim 4, further comprising the step of oxidizing the ink.
Manufacturing method of head. 6. An ink chamber and an ink pool are anisotropic.
The process of forming by reactive etching is performed with the ink chamber.
Including the step of forming ink supply holes with the ink pool
The inkjet printer according to any one of claims 3 to 5.
Method of manufacturing a pad. 7. An ink chamber and an ink pool are anisotropic.
The process of forming by reactive etching is performed with the ink chamber.
Including the step of forming ink supply holes with the ink pool
The ink supply hole is located between the ink chamber and the ink pool.
Includes a step of joining a lid plate to the formed sillcon substrate
A method of manufacturing an inkjet head according to claim 3 or 5.
Law. 8. An ink chamber and an ink pool are opened.
The process of closing the mouth part is done with the ink chamber and the ink pool.
Including the step of joining the lid plate with the ink supply groove provided between them.
Manufacturing of the inkjet head according to claim 3 or 5.
Method. 9. An ink chamber and an ink pool are anisotropic.
The process of forming by reactive etching is performed with the ink chamber.
Including the step of forming ink supply holes with the ink pool
The process of closing the openings of the ink chamber and ink pool is
A process for oxidizing the silicon remaining in the opening of the ink chamber.
7. A method of manufacturing an inkjet head according to claim 6, including the steps
Law. 10. The ink chamber is provided on the opposite side of the nozzle from the nozzle.
A piezoelectric element that applies ejection pressure to the ink in the chamber
10. The method according to claim 7, further comprising the step of:
Method for manufacturing a jet jet head.