JP3417239B2 - Manufacturing method of microelectromechanical device - Google Patents
Manufacturing method of microelectromechanical deviceInfo
- Publication number
- JP3417239B2 JP3417239B2 JP00665997A JP665997A JP3417239B2 JP 3417239 B2 JP3417239 B2 JP 3417239B2 JP 00665997 A JP00665997 A JP 00665997A JP 665997 A JP665997 A JP 665997A JP 3417239 B2 JP3417239 B2 JP 3417239B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- manufacturing
- processing
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 41
- 239000007789 gas Substances 0.000 description 41
- 238000006243 chemical reaction Methods 0.000 description 34
- 238000002360 preparation method Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 16
- 239000000654 additive Substances 0.000 description 15
- 230000000996 additive effect Effects 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- -1 silicon nitride Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Micromachines (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体回路にマ
イクロマシーニング技術を用いて作製されるマイクロエ
レクトロメカニカルデバイスの作製方法に関するもので
ある。BACKGROUND OF THE INVENTION The present invention relates to a method for manufacturing a microelectromechanical device manufactured using the micromachining technology to the semiconductor circuit.
【０００２】[0002]
【従来の技術】室温動作型赤外線センサ、加速度セン
サ、マイクロモータ等は、構造体をその直下の基板と分
離して断熱特性の向上を図り、センサやアクチュエータ
としての特性を得ている。一般にこれらの構造体は基板
や薄膜の上に形成して、最後に構造体直下の基板や薄膜
を除去する。基板や薄膜としては、珪素、酸化珪素、有
機物等が用いられる。特に、珪素を除去する技術は、珪
素基板を加工でき様々な構造を得ることをできるため有
用な技術である。2. Description of the Related Art In room temperature infrared sensors, acceleration sensors, micromotors, etc., a structure is separated from a substrate directly below it to improve heat insulation characteristics and obtain characteristics as a sensor or an actuator. Generally, these structures are formed on a substrate or thin film, and finally the substrate or thin film directly below the structure is removed. As the substrate and the thin film, silicon, silicon oxide, organic substances, etc. are used. In particular, the technique of removing silicon is a useful technique because the silicon substrate can be processed and various structures can be obtained.
【０００３】珪素を除去する方法は、水酸化カリウム溶
液、テトラメチルアンモニウムハイドロオキサイド溶
液、エチレンジアミンピロカテロール溶液を用いた湿式
法と、二弗化キセノンガスを用いた乾式法とがある。湿
式法は、最終段階で乾燥を行なう必要があり、このとき
動水力学的な力により構造体の破損が生じることが多
い。これに対して乾式法では、乾燥工程がないため、本
質的に構造体の破損がなく、良好な歩留まりが実現でき
る。Methods for removing silicon include a wet method using a potassium hydroxide solution, a tetramethylammonium hydroxide solution, and an ethylenediaminepyrocaterol solution, and a dry method using a xenon difluoride gas. In the wet method, it is necessary to perform drying at the final stage, and at this time, the structure is often broken due to hydrodynamic force. On the other hand, in the dry method, since there is no drying step, there is essentially no damage to the structure, and a good yield can be realized.
【０００４】特に、二弗化キセノンを用いた乾式法は、
特公昭５６−３６２２６号公報に、珪素に対する加工が
有用であることが示されており、また、国際公開９６−
２３２２９号公報には、マイクロエレクトロメカニカル
デバイスの作製方法に適し、構造の破損が低減されるこ
とが示されている。Particularly, the dry method using xenon difluoride is
Japanese Examined Patent Publication No. 56-32626 shows that processing for silicon is useful, and the international publication 96-
Japanese Patent No. 23229 discloses that it is suitable for a method of manufacturing a microelectromechanical device, and structural damage is reduced.
【０００５】図５は、上記国際公開９６−２３２２９号
公報に示された従来のマイクロエレクトロメカニカルデ
バイスの作製装置を示す構成図である。図において、１
は珪素からなる基板を含んだ加工部材を入れる反応室、
２は反応室１を真空にするポンプ、３はエッチャントで
ある二弗化キセノンが入ったセル、４は二弗化キセノン
を反応室１に導入するセルバルブ、５は真空になった反
応室１を大気開放するベントバルブである。FIG. 5 is a block diagram showing an apparatus for manufacturing a conventional microelectromechanical device shown in the above-mentioned International Publication No. 96-23229. In the figure, 1
Is a reaction chamber containing a processing member including a substrate made of silicon,
2 is a pump for evacuating the reaction chamber 1; 3 is a cell containing xenon difluoride, which is an etchant; 4 is a cell valve for introducing xenon difluoride into the reaction chamber 1; This is a vent valve that opens to the atmosphere.
【０００６】次に動作について説明する。まず、珪素か
らなる基板を含んだ加工部材を反応室１に入れ、反応室
１をポンプ２で真空にする。次に、セル３に固体の二弗
化キセノンを入れ、セルバルブ４を開ける。約５００Ｐ
ａで二弗化キセノンは昇華し、ガス化した二弗化キセノ
ンは圧力勾配に従って反応室１に流れ込み、加工部材中
の珪素の除去が始まる。反応室１は排気能力を調整され
たポンプで真空引きされており、例えば２００Ｐａ等の
所望の反応室の圧力に維持される。この状態で珪素の除
去が逐次進んでいく。加工終了後、ベントバルブ９で反
応室１を大気解放する。Next, the operation will be described. First, a processed member including a substrate made of silicon is placed in the reaction chamber 1, and the reaction chamber 1 is evacuated by the pump 2. Next, solid xenon difluoride is put into the cell 3 and the cell valve 4 is opened. About 500P
The xenon difluoride sublimes at a, and the gasified xenon difluoride flows into the reaction chamber 1 according to the pressure gradient, and the removal of silicon in the processed member begins. The reaction chamber 1 is evacuated by a pump having an adjusted exhaust capacity, and is maintained at a desired pressure in the reaction chamber, such as 200 Pa. In this state, the removal of silicon proceeds successively. After the processing is completed, the vent chamber 9 opens the reaction chamber 1 to the atmosphere.
【０００７】[0007]
【発明が解決しようとする課題】従来のマイクロエレク
トロメカニカルデバイス作製方法及び作製装置は以上の
ように構成されているので、次のような問題点を有して
いた。Since the conventional method and apparatus for manufacturing a microelectromechanical device are configured as described above, they have the following problems.
【０００８】マイクロエレクトロメカニカルデバイス
は、既存の半導体技術を取り入れて製作することが有用
である。従来の半導体作製技術において一般的な配線材
料であるアルミニウムまたはその合金で基板上に配線し
たあとは、構造体として、プラズマ励起型化学的気相成
長法により窒化珪素や酸化珪素などを形成することにな
る。従って、マイクロエレクトロメカニカルデバイスの
最表面には、プラズマ励起型化学的気相成長法を用いた
窒化珪素や酸化珪素などの構造体が形成され、最後に上
記基板を除去して完成される。しかし、上記従来例のエ
ッチャントである二弗化キセノンは、プラズマ励起型化
学的気相成長法を用いて形成した窒化珪素や酸化珪素の
構造体を溶解してしまい、所望のデバイス構造が得られ
ないという問題点があった。It is useful to manufacture the microelectromechanical device by incorporating existing semiconductor technology. After wiring on the substrate with aluminum or its alloy, which is a common wiring material in conventional semiconductor fabrication technology, form silicon nitride, silicon oxide, etc. by plasma-enhanced chemical vapor deposition as a structure become. Therefore, on the outermost surface of the microelectromechanical device, a structure such as silicon nitride or silicon oxide is formed by using the plasma-enhanced chemical vapor deposition method, and finally the substrate is removed to complete the structure. However, xenon difluoride, which is the etchant of the above-mentioned conventional example, dissolves the silicon nitride or silicon oxide structure formed by the plasma-enhanced chemical vapor deposition method, and a desired device structure is obtained. There was a problem that it did not exist.
【０００９】この発明は上記のような問題点を解消する
ためになされたもので、構造体を傷めずに基板のみを除
去できるマイクロエレクトロメカニカルデバイス作製方
法及び作製装置を得ることを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to obtain a method and an apparatus for manufacturing a microelectromechanical device capable of removing only the substrate without damaging the structure.
【００１０】[0010]
【課題を解決するための手段】この発明に係るマイクロ
エレクトロメカニカルデバイス作製方法は、水分が添加
された二弗化キセノンからなるエッチャントを用いて、
珪素からなる基板と酸化珪素または窒化珪素を主成分と
する膜とを備えた加工部材から上記膜に対して珪素のみ
を選択的に除去することにより、上記加工部材内に中空
構造を形成するものである。In the method of manufacturing a microelectromechanical device according to the present invention, water is added.
Using an etchant composed of xenon difluoride,
Substrate made of silicon and silicon oxide or silicon nitride as a main component
From a processed member having a film to
By selectively removing the
It forms a structure .
【００１１】[0011]
【００１２】[0012]
【００１３】また、エッチャントに水分を添加する方法
は水蒸気である。The method of adding water to the etchant is steam.
【００１４】また、加工部材の最上表面は、プラズマ励
起型化学的気相成長法によって酸化珪素または窒化珪素
を主成分とする膜が形成されているものである。On the uppermost surface of the processed member, a film containing silicon oxide or silicon nitride as a main component is formed by a plasma-enhanced chemical vapor deposition method.
【００１５】[0015]
【００１６】また、加工部材の裏面及び端面のいずれか
一方、または両方を、酸化物、窒化物、金属膜、有機膜
のいずれか一つで被覆するものである。Further, one or both of the back surface and the end surface of the processed member is coated with one of an oxide, a nitride, a metal film and an organic film.
【００１７】[0017]
【００１８】[0018]
【００１９】[0019]
実施の形態１．以下、本発明の実施の一形態を図につい
て説明する。図１は、本発明の実施の形態１によるマイ
クロエレクトロメカニカルデバイス作製装置を示す構成
図である。図において、１は珪素からなる基板を含んだ
加工部材を入れる反応室、２は反応室１を真空にするポ
ンプ、３はエッチャントである二弗化キセノンが入った
セル、４は二弗化キセノンを反応室１に導入するセルバ
ルブ、５は真空になった反応室１を大気開放するベント
バルブ、６はエッチャントに添加ガスを添加する中間準
備室、７はメインバルブ、８はガスバルブ、９は添加ガ
スバルブ、１０は反応室圧力計、１１は中間準備室圧力
計、１２は水、１３は窒素ガスである。なお、従来例と
同一符号を付したものは従来例と同一または相当するも
のである。Embodiment 1. An embodiment of the present invention will be described below with reference to the drawings. 1 is a configuration diagram showing a microelectromechanical device manufacturing apparatus according to a first embodiment of the present invention. In the figure, 1 is a reaction chamber in which a processing member including a substrate made of silicon is placed, 2 is a pump for evacuating the reaction chamber 1, 3 is a cell containing xenon difluoride as an etchant, and 4 is xenon difluoride. To the reaction chamber 1 is a cell valve, 5 is a vent valve that opens the vacuumed reaction chamber 1 to the atmosphere, 6 is an intermediate preparation chamber for adding an additive gas to the etchant, 7 is a main valve, 8 is a gas valve, and 9 is addition. A gas valve, 10 is a reaction chamber pressure gauge, 11 is an intermediate preparation chamber pressure gauge, 12 is water, and 13 is nitrogen gas. The same reference numerals as those in the conventional example are the same as or equivalent to those in the conventional example.
【００２０】また図２は、本発明の実施の形態１による
マイクロエレクトロメカニカルデバイス作製方法で用い
る加工部材を示す断面図である。図において、２０は珪
素基板、２１は珪素基板２０上にプラズマ励起型化学的
気相成長法により成膜された窒化珪素、２２は珪素基板
２０が表面に露出するように窒化珪素２１に形成した基
板除去孔である。FIG. 2 is a sectional view showing a processed member used in the microelectromechanical device manufacturing method according to the first embodiment of the present invention. In the figure, 20 is a silicon substrate, 21 is silicon nitride formed on the silicon substrate 20 by plasma-enhanced chemical vapor deposition, and 22 is formed on the silicon nitride 21 so that the silicon substrate 20 is exposed on the surface. It is a substrate removal hole.
【００２１】また図３は、本発明の実施の形態１による
マイクロエレクトロメカニカルデバイス作製方法で用い
る別の加工部材を示す断面図である。図において、２３
は珪素基板２０上に減圧下熱化学的気相成長法により作
製された酸化珪素、２４は酸化珪素２３上に減圧下熱化
学的気相成長法により形成された多結晶珪素である。な
お、上記図２と同一符号を付したものは同一または相当
するものである。また、基板除去孔２２は、多結晶珪素
２４が表面に露出するように窒化珪素２１に形成されて
いる。FIG. 3 is a cross-sectional view showing another processing member used in the method for manufacturing a microelectromechanical device according to the first embodiment of the present invention. In the figure, 23
Is a silicon oxide formed on the silicon substrate 20 by the reduced pressure thermochemical vapor deposition method, and 24 is polycrystalline silicon formed on the silicon oxide 23 by the reduced pressure thermochemical vapor deposition method. The same reference numerals as those in FIG. 2 are the same or equivalent. The substrate removal hole 22 is formed in the silicon nitride 21 so that the polycrystalline silicon 24 is exposed on the surface.
【００２２】次に動作について説明する。まず、図２及
び図３に示すような加工部材を反応室１に入れ、反応室
１及び中間準備室６をポンプ２で真空にする。次に、セ
ル３に固体の二弗化キセノンを入れ、セルバルブ４を開
ける。二弗化キセノンが昇華し、中間準備室６に二弗化
キセノンガスが導入する。一方、水１２に窒素ガス１３
をキャリアガスとして用いたバブリング法により、エッ
チャントに添加するための添加ガスを生成する。添加ガ
ス（ここでは水分含有窒素ガス）が生成されたら、添加
ガスバルブ９を開けて、中間準備室６に添加ガスを導入
する。以上のようにして、二弗化キセノンガスに添加ガ
スを添加したエッチャントが準備できたら、ガスバルブ
８を開けて反応室１にエッチャントを導入し、エッチャ
ントにより珪素基板が溶融され加工が進む。加工終了
後、メインバルブ７を開け反応室１を真空引きして、さ
らにベントバルブ５で反応室１を大気開放する。Next, the operation will be described. First, a processing member as shown in FIGS. 2 and 3 is put in the reaction chamber 1, and the reaction chamber 1 and the intermediate preparation chamber 6 are evacuated by the pump 2. Next, solid xenon difluoride is put into the cell 3 and the cell valve 4 is opened. Xenon difluoride is sublimated, and xenon difluoride gas is introduced into the intermediate preparation chamber 6. On the other hand, water 12 contains nitrogen gas 13
Additive gas for adding to the etchant is generated by the bubbling method using as a carrier gas. When the additive gas (here, the water-containing nitrogen gas) is generated, the additive gas valve 9 is opened and the additive gas is introduced into the intermediate preparation chamber 6. As described above, when the etchant prepared by adding the additive gas to the xenon difluoride gas is prepared, the gas valve 8 is opened and the etchant is introduced into the reaction chamber 1, and the silicon substrate is melted by the etchant and the processing proceeds. After the processing is completed, the main valve 7 is opened to evacuate the reaction chamber 1, and the vent valve 5 opens the reaction chamber 1 to the atmosphere.
【００２３】ここで、中間準備室６を設ける理由につい
て考察してみると、以下のことが考えられる。中間準備
室を設けないで、反応室１に直接二弗化キセノンを導入
してその後水分を導入すると、最初に、純粋な二弗化キ
セノンが反応室１に存在するので、窒化珪素または酸化
珪素は溶解してしまう。またこれとは逆に、反応室１に
水分を導入してから二弗化キセノンを導入すると、セル
３に水分が逆流してしまう。逆流防止用に逆止弁を設け
ることも考えられるが、二弗化キセノンは４Ｔｏｒｒ以
下のガス分圧しか持てないので、実施上装置設定が困難
となる。従って、中間準備室６を設けて、二弗化キセノ
ンを中間準備室６に導入してから水分を導入して、混合
させた状態で反応室１に供給する方法が有効であると言
える。Considering the reason for providing the intermediate preparation chamber 6, the following can be considered. When xenon difluoride is directly introduced into the reaction chamber 1 without introducing the intermediate preparation chamber and then water is introduced, pure xenon difluoride is present in the reaction chamber 1 first, so that silicon nitride or silicon oxide is first introduced. Will dissolve. On the contrary, when water is introduced into the reaction chamber 1 and then xenon difluoride is introduced, the water flows back into the cell 3. A check valve may be provided to prevent backflow, but since xenon difluoride has a gas partial pressure of 4 Torr or less, it is difficult to set the device in practice. Therefore, it can be said that the method of providing the intermediate preparation chamber 6 and introducing the xenon difluoride into the intermediate preparation chamber 6 and then introducing the water into the reaction chamber 1 in a mixed state is effective.
【００２４】以上のような装置及び方法を用いて加工す
れば、図２（ｂ）のように、窒化珪素２１は加工され
ず、珪素基板２０のみが基板除去孔２２から進入したエ
ッチャントによって除去され、加工部材内に中空部を形
成することが可能である。また、図３（ｂ）のように、
窒化珪素２１と酸化珪素２３は加工されず、多結晶珪素
２４のみが基板除去孔２２から進入したエッチャントに
よって除去され、加工部材内に中空部を形成することが
可能である。なお、加工についての詳細な経過は下記実
施例で説明する。By processing using the above apparatus and method, the silicon nitride 21 is not processed as shown in FIG. 2B, and only the silicon substrate 20 is removed by the etchant that has entered through the substrate removal hole 22. It is possible to form a hollow portion in the processed member. In addition, as shown in FIG.
The silicon nitride 21 and the silicon oxide 23 are not processed, and only the polycrystalline silicon 24 is removed by the etchant that has entered from the substrate removal hole 22, so that a hollow portion can be formed in the processed member. The detailed process of processing will be described in the following examples.
【００２５】なお、積層される膜は、本実施の形態で用
いた手法に限るものではなく、スパッタ法、各種化学的
気相成長法で形成されても良い。また、各構成膜は各々
パターンが形成されていても良い。また、本実施の形態
では、二弗化キセノンガスを用いたが、希ガスの弗化物
であればこれに限るものではない。The film to be laminated is not limited to the method used in this embodiment, but may be formed by a sputtering method or various chemical vapor deposition methods. Further, each constituent film may have a pattern formed therein. Further, although xenon difluoride gas is used in the present embodiment, it is not limited to this as long as it is a rare gas fluoride.
【００２６】実施の形態２．本実施の形態では、セルバ
ルブ４、メインバルブ７、ガスバルブ８、添加ガスバル
ブ９の各種バルブを、反応室圧力計１０及び中間準備室
圧力計１１とも連動した自動シーケンスの装置構成にし
た。メインバルブ７と反応室圧力計１０、セルバルブ４
及び添加ガスバルブ９と中間準備室圧力計１１とをそれ
ぞれ連動させ、時間設定と共にシーケンサをもって自動
運転可能とした。Embodiment 2. In the present embodiment, the cell valve 4, the main valve 7, the gas valve 8 and the additive gas valve 9 are arranged in an automatic sequence in which the reaction chamber pressure gauge 10 and the intermediate preparation chamber pressure gauge 11 are also interlocked. Main valve 7, reaction chamber pressure gauge 10, cell valve 4
Also, the additional gas valve 9 and the intermediate preparation chamber pressure gauge 11 are interlocked with each other so that automatic operation can be performed with a sequencer together with time setting.
【００２７】次に、上記図１をもとに自動運転の動作に
ついて説明する。自動加工開始後、まず、メインバルブ
７とガスバルブ８が開けられる。反応室圧力計１０と中
間準備室圧力計１１とが所望の真空度を示した後、メイ
ンバルブ７とガスバルブ８は閉じられる。この後一定時
間後にセルバルブ４が開けられ、中間準備室６に二弗化
キセノンガスが導入される。中間準備室圧力計１１が所
望の圧力を示した後、セルバルブ４は閉じられ、一定時
間後に添加ガスバルブ９を開けて、中間準備室６に水分
が導入される。中間準備室圧力計１１が所望の圧力を示
した後、添加ガスバルブ９は閉じられ、一定時間後にガ
スバルブ８が開けられ反応室１にエッチャントが導入さ
れる。一定時間後にガスバルブ８が閉じられ、さらに一
定時間放置し加工を行なわれた後、メインバルブ７、ガ
スバルブ８が開けられ、反応室１及び中間準備室２を真
空にする。反応室圧力計１０と中間準備室圧力計１１と
が所望の真空度を示した後、メインバルブ７とガスバル
ブ８は閉じられる。Next, the operation of automatic operation will be described with reference to FIG. After starting the automatic processing, first, the main valve 7 and the gas valve 8 are opened. The main valve 7 and the gas valve 8 are closed after the reaction chamber pressure gauge 10 and the intermediate preparation chamber pressure gauge 11 indicate the desired degree of vacuum. After a certain period of time, the cell valve 4 is opened and the xenon difluoride gas is introduced into the intermediate preparation chamber 6. After the intermediate preparation chamber pressure gauge 11 indicates a desired pressure, the cell valve 4 is closed, and after a certain time, the additive gas valve 9 is opened to introduce water into the intermediate preparation chamber 6. After the pressure in the preparatory chamber pressure gauge 11 indicates the desired pressure, the additive gas valve 9 is closed, and after a certain time, the gas valve 8 is opened and the etchant is introduced into the reaction chamber 1. After a fixed time, the gas valve 8 is closed, and after being left to stand for a fixed time for processing, the main valve 7 and the gas valve 8 are opened, and the reaction chamber 1 and the intermediate preparation chamber 2 are evacuated. The main valve 7 and the gas valve 8 are closed after the reaction chamber pressure gauge 10 and the intermediate preparation chamber pressure gauge 11 indicate the desired degree of vacuum.
【００２８】所望の形状が得られるまで上記シーケンス
は繰り返され、最後にベントバルブ５をもって反応室１
を大気解放する。この結果、上記実施の形態１と同様の
動作が自動運転で可能であることが確かめられ、上記実
施の形態１と同様の効果を得ることができた。The above sequence is repeated until the desired shape is obtained, and finally the reaction chamber 1 is equipped with the vent valve 5.
To the atmosphere. As a result, it was confirmed that the same operation as in the first embodiment can be performed by the automatic operation, and the same effect as in the first embodiment could be obtained.
【００２９】実施の形態３．反応室で加工される加工部
材は、珪素基板上のデバイス毎の大きさに切断されてい
るので、加工部材の端面及び裏面は珪素基板が露出して
いる。従って、加工部材の端面及び裏面のような除去し
なくても良い珪素部分もエッチャントに接触して加工さ
れてしまい、本来の基板除去孔からの基板除去加工がな
かなか進まない。そこで、本実施の形態では、加工部材
の裏面及び端面を覆うホルダを取り付けた。Embodiment 3. Since the processed member processed in the reaction chamber is cut into the size for each device on the silicon substrate, the silicon substrate is exposed on the end surface and the back surface of the processed member. Therefore, the silicon portions that do not need to be removed, such as the end surface and the back surface of the processed member, are also processed by contacting the etchant, and the substrate removal processing from the original substrate removal hole does not proceed easily. Therefore, in the present embodiment, a holder that covers the back surface and the end surface of the processed member is attached.
【００３０】図４は、この発明の実施の形態３によるマ
イクロエレクトロメカニカルデバイス作製方法で用いる
ホルダを示す図である。図において、３０は加工部材、
３１は加工部材３０の端面及び裏面を覆うアルミ合金
台、３２は加工部材上表面を開口したアルミ合金蓋で、
アルミ合金台３１とアルミ合金蓋３２でホルダを構成し
ている。３３はアルミ合金台３１とアルミ合金蓋３２と
の間に噛ませたゴムリングである。FIG. 4 is a diagram showing a holder used in the method for manufacturing a microelectromechanical device according to the third embodiment of the present invention. In the figure, 30 is a processing member,
Reference numeral 31 is an aluminum alloy base that covers the end surface and the back surface of the processed member 30, and 32 is an aluminum alloy lid that has an open upper surface of the processed member.
The aluminum alloy base 31 and the aluminum alloy lid 32 constitute a holder. Reference numeral 33 is a rubber ring that is held between the aluminum alloy base 31 and the aluminum alloy lid 32.
【００３１】以上のようなホルダを設けることにより、
加工部材３０の端部及び裏面の珪素基板はエッチャント
にさらされないので、加工する必要のない部分の加工を
防止し、加工部材３０の上表面に形成された基板除去孔
からの基板除去加工が促進される。なお、このホルダを
用いた場合と用いない場合とでその加工時間を比較した
結果、ホルダを使用すれば、使用しない場合の１０分の
１の時間で処理を終えることができた。さらに、加工部
材の側面及び裏面の加工を防ぐことができた。By providing the holder as described above,
Since the silicon substrates on the end and back surface of the processing member 30 are not exposed to the etchant, processing of a portion that does not need to be processed is prevented, and substrate removal processing from the substrate removal hole formed on the upper surface of the processing member 30 is promoted. To be done. As a result of comparing the processing time with and without using this holder, it was possible to complete the processing in 1/10 of the time without using the holder. Further, it was possible to prevent the side surface and the back surface of the processed member from being processed.
【００３２】実施の形態４．本実施の形態は、上記実施
の形態４でのホルダに変わって、加工部材の裏面をスパ
ッタ法による酸化珪素で被覆した。被覆した場合としな
い場合とでその加工時間を比較した結果、被覆した方は
しない場合の１０分の１の時間で処理を終えることがで
き、上記実施の形態４と同様の効果を得ることができ
た。Fourth Embodiment In this embodiment, instead of the holder in the above-mentioned fourth embodiment, the back surface of the processed member is covered with silicon oxide by the sputtering method. As a result of comparing the processing time with and without coating, the processing can be completed in one tenth of the time with and without coating, and the same effect as in Embodiment 4 can be obtained. did it.
【００３３】なお、裏面を被覆する材料は、窒化珪素な
どの窒化物、酸化タンタルなどの酸化物、白金、銅など
の金属膜、フォトレジスト、及びエポキシ樹脂などの有
機膜でも良く、また、各種成膜法が適用できる。The material for coating the back surface may be a nitride such as silicon nitride, an oxide such as tantalum oxide, a metal film such as platinum and copper, a photoresist, and an organic film such as an epoxy resin, and various materials. A film forming method can be applied.
【００３４】実施の形態５．本実施の形態は、上記実施
の形態４でのホルダに変わって、加工部材の端面をフォ
トレジストで被覆した。被覆した場合としない場合とで
その加工時間を比較した結果、被覆した方はしない場合
の半分の時間で処理を終えることができ、上記実施の形
態４及び５と同様の効果を得ることができた。Embodiment 5. In the present embodiment, instead of the holder in the above-mentioned Embodiment 4, the end surface of the processed member is covered with photoresist. As a result of comparing the processing time with and without coating, the processing can be completed in half the time with and without coating, and the same effects as those of the fourth and fifth embodiments can be obtained. It was
【００３５】なお、端面を被覆する材料は、窒化珪素な
どの窒化物、酸化タンタルなどの酸化物、白金、銅など
の金属膜、フォトレジスト、及びエポキシ樹脂などの有
機膜でも良く、また、各種成膜法が適用できる。さら
に、上記実施の形態４での裏面の被覆と併せるとより効
果的であることは言うまでもない。The material for coating the end face may be a nitride such as silicon nitride, an oxide such as tantalum oxide, a metal film such as platinum and copper, a photoresist, and an organic film such as an epoxy resin, and various materials. A film forming method can be applied. Further, it is needless to say that it is more effective when combined with the back surface coating in the fourth embodiment.
【００３６】[0036]
【実施例】
実施例１．上記実施の形態１によるマイクロエレクトロ
メカニカルデバイス作製装置において、二弗化キセノン
導入後（添加ガス導入前）の中間準備室６の圧力：２５
０Ｐａ、添加ガス導入後の中間準備室６の圧力：５００
Ｐａ、添加ガス：１ｗｔ％水蒸気含有窒素ガス、エッチ
ャント中の二弗化キセノンガス分圧比：５０％、加工中
の反応室１の圧力：２５０Ｐａ、加工時間：２分の条件
下で加工を実施した。また、加工部材は以下に挙げる
（ａ）から（ｉ）までの９種類を用いた。
（ａ）６２５ミクロン厚の珪素基板上に、熱酸化法によ
り酸化珪素を形成し、さらにこの上に減圧下熱化学的気
相成長法で１ミクロン厚の多結晶珪素を形成した加工部
材。
（ｂ）６２５ミクロン厚の珪素基板上に、熱酸化法によ
り酸化珪素を形成し、さらにこの上にスパッタ法で１ミ
クロン厚の非晶質珪素を形成した加工部材。
（ｃ）６２５ミクロン厚の珪素基板上に、熱酸化法によ
り０．１ミクロン厚の酸化珪素を形成した加工部材。
（ｄ）６２５ミクロン厚の珪素基板上に、減圧下熱化学
的気相成長法により０．１ミクロン厚の酸化珪素を形成
した加工部材。
（ｅ）６２５ミクロン厚の珪素基板上に、プラズマ励起
型化学的気相成長法により０．１ミクロン厚の酸化珪素
を形成した加工部材。
（ｆ）６２５ミクロン厚の珪素基板上に、スパッタ法に
より０．１ミクロン厚の酸化珪素を形成した加工部材。
（ｇ）６２５ミクロン厚の珪素基板上に、減圧下熱化学
的気相成長法により０．１ミクロン厚の窒化珪素を形成
した加工部材。
（ｈ）６２５ミクロン厚の珪素基板上に、プラズマ励起
型化学的気相成長法により０．１ミクロン厚の窒化珪素
を形成した加工部材。
（ｉ）６２５ミクロン厚の珪素基板上に、スパッタ法に
より０．１ミクロン厚の窒化珪素を形成した加工部材。EXAMPLES Example 1. In the microelectromechanical device manufacturing apparatus according to the first embodiment, the pressure in the intermediate preparation chamber 6 after the introduction of xenon difluoride (before the introduction of the added gas): 25
0 Pa, pressure in the intermediate preparation chamber 6 after introducing the additive gas: 500
Pa, additive gas: nitrogen gas containing 1 wt% steam, partial pressure ratio of xenon difluoride gas in etchant: 50%, pressure of reaction chamber 1 during processing: 250 Pa, processing time: 2 minutes. . Further, as the processed members, nine kinds (a) to (i) listed below were used. (A) A processed member in which silicon oxide is formed on a 625-micron-thick silicon substrate by a thermal oxidation method, and 1-micron-thick polycrystalline silicon is further formed thereon by a thermochemical vapor deposition method under reduced pressure. (B) A processed member in which silicon oxide is formed on a 625-micron-thick silicon substrate by a thermal oxidation method, and further 1-micron-thick amorphous silicon is formed thereon by a sputtering method. (C) A processed member in which silicon oxide having a thickness of 0.1 μm is formed by a thermal oxidation method on a silicon substrate having a thickness of 625 μm. (D) A processed member in which a silicon oxide having a thickness of 0.1 μm is formed on a silicon substrate having a thickness of 625 μm by a thermochemical vapor deposition method under reduced pressure. (E) A processed member in which a silicon oxide having a thickness of 0.1 μm is formed on a silicon substrate having a thickness of 625 μm by a plasma-enhanced chemical vapor deposition method. (F) A processed member in which silicon oxide having a thickness of 0.1 μm is formed on a silicon substrate having a thickness of 625 μm by a sputtering method. (G) A processed member in which silicon nitride having a thickness of 0.1 μm is formed on a silicon substrate having a thickness of 625 μm by thermochemical vapor deposition under reduced pressure. (H) A processed member in which a silicon nitride having a thickness of 0.1 μm is formed on a silicon substrate having a thickness of 625 μm by a plasma enhanced chemical vapor deposition method. (I) A processed member in which silicon nitride having a thickness of 0.1 μm is formed on a silicon substrate having a thickness of 625 μm by a sputtering method.
【００３７】比較例１．添加ガスに水分を導入しないこ
と以外は上記実施例１と同様の装置、加工部材で実施し
た。Comparative Example 1. The same apparatus and processed members as in Example 1 were used except that water was not introduced into the added gas.
【００３８】比較例２．添加ガスを全く用いないこと以
外は上記実施例１と同様の装置、加工部材で実施した。Comparative Example 2. The same apparatus and processed members as in Example 1 were used except that no additional gas was used.
【００３９】比較例３．中間準備室６を取り除き、二弗
化キセノンを反応室１に導入する圧力を１２５Ｐａとす
ること以外は、上記実施例１と同様の装置、加工部材で
実施した。Comparative Example 3. The same apparatus and processing members as in Example 1 were used except that the intermediate preparation chamber 6 was removed and the pressure for introducing xenon difluoride into the reaction chamber 1 was 125 Pa.
【００４０】以上のような加工の結果、実施例１では、
いずれの加工部材でも、酸化珪素、窒化珪素には加工が
進んでおらず、珪素のみ毎分０．５ミクロン程度の速度
で加工が進んでいた。一方、比較例１、２及び３では、
いずれの加工部材でも、珪素が毎分０．６ミクロン程
度、酸化珪素が毎分４ナノメートル程度、窒化珪素が毎
分１０ナノメートル程度で加工が進んでいた。従って、
水分を含む添加ガス及び中間準備室の有用性が確認でき
た。As a result of the above processing, in the first embodiment,
In any of the processed members, the processing was not progressing on silicon oxide and silicon nitride, and the processing was progressing only on silicon at a speed of about 0.5 μm / min. On the other hand, in Comparative Examples 1, 2 and 3,
In each of the processed members, processing progressed at a rate of about 0.6 μm / min for silicon, about 4 nm / min for silicon oxide, and about 10 nm / min for silicon nitride. Therefore,
The usefulness of the added gas containing water and the intermediate preparation room was confirmed.
【００４１】実施例２．添加ガス導入後の中間準備室６
の圧力：２６０Ｐａ、添加ガス：常温減圧下で作製した
飽和水蒸気とし、あとは上記実施例１と同様に加工を実
施した。加工の結果、いずれの加工部材でも珪素のみが
加工され、添加ガスとして飽和水蒸気が使えることが分
かった。Example 2. Intermediate preparation room 6 after introduction of additive gas
The pressure was 260 Pa, the added gas was saturated water vapor produced at room temperature under reduced pressure, and the rest was processed in the same manner as in Example 1. As a result of the processing, it was found that only silicon was processed in any of the processed members and saturated steam could be used as an additive gas.
【００４２】実施例３．添加ガスの水分含有率を０．
１、０．５、２、４、１０ｗｔ％に変化させて、また、
キャリアガスに窒素ガス、酸素ガス、アルゴンガスのそ
れぞれを用いたこと以外は、上記実施例１と同様に加工
を実施した。いずれの加工部材でも珪素のみが加工さ
れ、添加ガスの水分含有率を変化させることが可能であ
り、また、キャリアガスとして酸素ガス、アルゴンガス
の使用が可能であることが分かった。Example 3. The water content of the additive gas is set to 0.
Change to 1, 0.5, 2, 4, 10 wt%,
Processing was performed in the same manner as in Example 1 except that nitrogen gas, oxygen gas, and argon gas were used as the carrier gas. It has been found that only silicon is processed in any of the processed members, the water content of the additive gas can be changed, and oxygen gas or argon gas can be used as the carrier gas.
【００４３】実施例４．６２５ミクロン厚の珪素基板上
に、プラズマ励起型化学的気相成長法により０．４ミク
ロン厚の窒化珪素を形成し、珪素基板が表面に露出する
ように窒化珪素に基板除去孔を設けたもの（上記図２参
照）を加工部材として用いたこと以外は上記実施例１と
同様の装置で実施した。加工の結果、窒化珪素には加工
が進んでおらず、珪素のみ毎分０．５ミクロン程度の速
度で加工が進んでいた。従って、基板除去孔を設けるこ
とにより、珪素基板内に中空部を形成することが可能で
あることが分かった。Example 4. A 0.4-micron-thick silicon nitride film was formed on a 625-micron-thick silicon substrate by plasma-enhanced chemical vapor deposition, and the silicon substrate was exposed so that the silicon substrate was exposed. The same apparatus as in Example 1 was used except that a substrate removing hole (see FIG. 2) was used as the processing member. As a result of the processing, the processing did not proceed on the silicon nitride, but only the silicon proceeded at a speed of about 0.5 μm / min. Therefore, it was found that it is possible to form the hollow portion in the silicon substrate by providing the substrate removal hole.
【００４４】実施例５．６２５ミクロン厚の珪素基板上
に、減圧下熱化学的気相成長法により０．５ミクロン厚
の酸化珪素、減圧下熱化学的気相成長法により０．２ミ
クロン厚の多結晶珪素、プラズマ励起型化学的気相成長
法により０．４ミクロン厚の窒化珪素をそれぞれ形成
し、多結晶珪素が表面に露出するように窒化珪素に基板
除去孔を設けたもの（上記図３参照）を加工部材として
用いたこと以外は上記実施例１と同様の装置で実施し
た。加工の結果、窒化珪素、酸化珪素には加工が進んで
おらず、多結晶珪素のみ毎分０．５ミクロン程度の速度
で加工が進んでいた。従って、基板除去孔を設けること
により、加工部材内に中空部を形成することが可能であ
ることが分かった。Example 5. On a 625-micron-thick silicon substrate, 0.5 micron-thick silicon oxide was formed by reduced pressure thermochemical vapor deposition, and 0.2 micron-thick by reduced pressure thermochemical vapor deposition. Of the above-mentioned polycrystalline silicon and silicon nitride having a thickness of 0.4 μm formed by the plasma-enhanced chemical vapor deposition method, and the substrate removing holes are provided in the silicon nitride so that the polycrystalline silicon is exposed on the surface (see above). 3) was used as a processing member, and the same apparatus as in Example 1 was used. As a result of the processing, the processing did not proceed on silicon nitride and silicon oxide, but only the polycrystalline silicon proceeded at a speed of about 0.5 μm / min. Therefore, it was found that it is possible to form the hollow portion in the processed member by providing the substrate removal hole.
【００４５】[0045]
【発明の効果】以上のように、請求項１記載の発明によ
れば、エッチャントは二弗化キセノンであり、さらにエ
ッチャントに水分を添加するので、構造体を傷めないで
基板のみを除去できる効果が得られる。As described above, according to the first aspect of the present invention, the etchant is xenon difluoride, and water is added to the etchant, so that the structure is not damaged. The effect of removing only this is obtained.
【００４６】[0046]
【００４７】[0047]
【００４８】また、請求項５記載の発明によれば、エッ
チャントに水分を添加する方法は水蒸気であるので、構
造体を傷めないで基板のみを除去できる効果が得られ
る。According to the fifth aspect of the invention, since the method of adding water to the etchant is water vapor, it is possible to remove only the substrate without damaging the structure.
【００４９】また、請求項２記載の発明によれば、加工
部材の最上表面は、プラズマ励起型化学的気相成長法に
よって酸化珪素または窒化珪素を主成分とする膜が形成
されているので、プラズマ励起型化学的気相成長法によ
って形成した酸化珪素または窒化珪素は加工されず、基
板のみを除去できる効果が得られる。According to the second aspect of the invention, since the uppermost surface of the processed member is formed with a film containing silicon oxide or silicon nitride as a main component by the plasma-enhanced chemical vapor deposition method, Silicon oxide or silicon nitride formed by plasma-enhanced chemical vapor deposition is not processed, and the effect of removing only the substrate is obtained.
【００５０】[0050]
【００５１】また、請求項３記載の発明によれば、加工
部材の裏面及び端面のいずれか一方、または両方を、酸
化物、窒化物、金属膜、有機膜のいずれか一つで被覆す
るので、加工する必要のない部分の加工を防止し、加工
時間を短縮する効果が得られる。According to the third aspect of the present invention, either or both of the back surface and the end surface of the processed member are covered with one of an oxide, a nitride, a metal film and an organic film. Further, it is possible to obtain an effect of preventing processing of a portion which does not need to be processed and shortening processing time.
【００５２】[0052]
【００５３】[0053]
【図１】 この発明の実施の形態１によるマイクロエレ
クトロメカニカルデバイス作製装置を示す構成図であ
る。FIG. 1 is a configuration diagram showing a microelectromechanical device manufacturing apparatus according to a first embodiment of the present invention.
【図２】 この発明の実施の形態１によるマイクロエレ
クトロメカニカルデバイス作製方法で用いる加工部材を
示す断面図である。FIG. 2 is a cross-sectional view showing a processed member used in the microelectromechanical device manufacturing method according to the first embodiment of the present invention.
【図３】 この発明の実施の形態２によるマイクロエレ
クトロメカニカルデバイス作製方法で用いる加工部材を
示す構成図である。FIG. 3 is a configuration diagram showing a processed member used in the microelectromechanical device manufacturing method according to the second embodiment of the present invention.
【図４】 この発明の実施の形態３によるマイクロエレ
クトロメカニカルデバイス作製方法で用いるホルダを示
す図である。FIG. 4 is a diagram showing a holder used in a method for manufacturing a microelectromechanical device according to a third embodiment of the present invention.
【図５】 従来のマイクロエレクトロメカニカルデバイ
ス作製装置を示す構成図である。FIG. 5 is a configuration diagram showing a conventional microelectromechanical device manufacturing apparatus.
１ 反応室、２ ポンプ、３ セル、６ 中間準備室、
２０ 珪素基板、２１窒化珪素、２２ 基板除去孔、２
３ 酸化珪素、２４ 多結晶珪素1 reaction chamber, 2 pumps, 3 cells, 6 intermediate preparation chamber,
20 silicon substrate, 21 silicon nitride, 22 substrate removal hole, 2
3 Silicon oxide, 24 Polycrystalline silicon
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−96222（ＪＰ，Ａ) 特開 平２−49425（ＪＰ，Ａ) 特開 平２−187025（ＪＰ，Ａ) 特開 平６−204192（ＪＰ，Ａ) 特公 平６−26206（ＪＰ，Ｂ２) 特公 昭56−36226（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.7，ＤＢ名) B81C 1/00 H01L 21/302 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-96222 (JP, A) JP-A-2-49425 (JP, A) JP-A2-187025 (JP, A) JP-A-6- 204192 (JP, A) Japanese Patent Publication 6-26206 (JP, B2) Japanese Patent Publication 56-36226 (JP, B2) (58) Fields investigated (Int.Cl. 7 , DB name) B81C 1/00 H01L 21 / 302
Claims (5)
るエッチャントを用いて、珪素からなる基板と酸化珪素
または窒化珪素を主成分とする膜とを備えた加工部材か
ら上記膜に対して珪素のみを選択的に除去することによ
り、上記加工部材内に中空構造を形成することを特徴と
するマイクロエレクトロメカニカルデバイスの作製方
法。1. A substrate made of silicon and silicon oxide are prepared by using an etchant made of xenon difluoride to which water is added.
Or a processed member having a film containing silicon nitride as a main component
By selectively removing only silicon from the above film.
A method for manufacturing a microelectromechanical device , characterized in that a hollow structure is formed in the processed member .
起型化学的気相成長法によって上記酸化珪素または窒化
珪素を主成分とする膜が形成されていることを特徴とす
る請求項１記載のマイクロエレクトロメカニカルデバイ
スの作製方法。Top surface according to claim 2, wherein said workpiece is according to claim 1, wherein a film composed mainly of the silicon oxide or silicon nitride is formed by plasma enhanced chemical vapor deposition Manufacturing method of microelectromechanical device.
一方、または両方を、酸化物、窒化物、金属膜、有機膜
のいずれか一つで被覆することを特徴とする請求項１記
載のマイクロエレクトロメカニカルデバイスの作製方
法。Meanwhile wherein one of the back surface and end face of the workpiece, or both, an oxide, a nitride, a metal film, according to claim 1, wherein the coating with any one of the organic film Manufacturing method of microelectromechanical device.
が、０．５重量％以上１０重量％以下であることを特徴
とする請求項１ないし３のいずれか１項記載のマイクロ
エレクトロメカニカルデバイスの作製方法。 4. The water content of the etchant
Is more than 0.5 wt% and less than 10 wt%
The micro according to any one of claims 1 to 3.
Manufacturing method of electromechanical device.
方法は水蒸気であることを特徴とする請求項１ないし４
のいずれか１項記載のマイクロエレクトロメカニカルデ
バイスの作製方法。How wherein adding the water to the etchant claims 1, characterized in that a water vapor 4
9. A method for manufacturing a microelectromechanical device according to any one of 1 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00665997A JP3417239B2 (en) | 1997-01-17 | 1997-01-17 | Manufacturing method of microelectromechanical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00665997A JP3417239B2 (en) | 1997-01-17 | 1997-01-17 | Manufacturing method of microelectromechanical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10209088A JPH10209088A (en) | 1998-08-07 |
| JP3417239B2 true JP3417239B2 (en) | 2003-06-16 |
Family
ID=11644514
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00665997A Expired - Fee Related JP3417239B2 (en) | 1997-01-17 | 1997-01-17 | Manufacturing method of microelectromechanical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3417239B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9709659D0 (en) * | 1997-05-13 | 1997-07-02 | Surface Tech Sys Ltd | Method and apparatus for etching a workpiece |
| US6736987B1 (en) * | 2000-07-12 | 2004-05-18 | Techbank Corporation | Silicon etching apparatus using XeF2 |
| US6887337B2 (en) * | 2000-09-19 | 2005-05-03 | Xactix, Inc. | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto |
| WO2002050883A1 (en) | 2000-12-18 | 2002-06-27 | Sumitomo Precision Products Co., Ltd | Cleaning method and etching method |
| DE60238752D1 (en) * | 2001-03-29 | 2011-02-10 | Toyota Chuo Kenkyusho Kk | A method of producing a hollow structure from a silicon structure |
| US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
| GB0413554D0 (en) * | 2004-06-17 | 2004-07-21 | Point 35 Microstructures Ltd | Improved method and apparartus for the etching of microstructures |
| US7132374B2 (en) * | 2004-08-17 | 2006-11-07 | Cecilia Y. Mak | Method for depositing porous films |
| US10079150B2 (en) | 2015-07-23 | 2018-09-18 | Spts Technologies Limited | Method and apparatus for dry gas phase chemically etching a structure |
| WO2017026001A1 (en) * | 2015-08-07 | 2017-02-16 | 株式会社日立国際電気 | Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium |
-
1997
- 1997-01-17 JP JP00665997A patent/JP3417239B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10209088A (en) | 1998-08-07 |
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