JP3406323B2 - DC high voltage generator - Google Patents
DC high voltage generatorInfo
- Publication number
- JP3406323B2 JP3406323B2 JP24648991A JP24648991A JP3406323B2 JP 3406323 B2 JP3406323 B2 JP 3406323B2 JP 24648991 A JP24648991 A JP 24648991A JP 24648991 A JP24648991 A JP 24648991A JP 3406323 B2 JP3406323 B2 JP 3406323B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- shield electrode
- high voltage
- shield
- rectifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Rectifiers (AREA)
- Generation Of Surge Voltage And Current (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】本発明は、シェンケル型整流逓倍
方式の直流高電圧発生装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Schenkel type rectifying and multiplying type DC high voltage generator.
【０００２】[0002]
【従来の技術】図３は静電型加速器におけるＭＶ（メガ
ボルト）級の高電圧電源として用いられているシェンケ
ル型整流逓倍方式の直流高電圧発生装置の回路図を示
す。高周波発振器１からの数１０ｋＨｚの高周波出力は
昇圧コイル部２の１次コイル２1に印加され、中点が接
地された２次コイル２2は高周波（ＲＦ）電極３1及び３
2に接続する。これらＲＦ電極は、円筒を二つ割した半
円筒状のものであり、ＲＦ電極の内側にこれら電極に対
向して同じく半円筒状であるが幅の狭いｎ個のシ−ルド
電極４1、４2、４3……４ｎが配置され、ＲＦ電極とシ
−ルド電極間に静電容量が形成される。シ−ルド電極４
1は接地され、各シ−ルド電極間にはそれぞれ整流器５
を図示極性で接続する。高周波発振器１を除くこれら整
流逓倍部全体はＳＦ6ガスが充填された密封容器内に配
置されている。第３シ−ルド電極４3以降のシ−ルド電
極には、２次コイル２2の電圧を順次増圧した直流電圧
が生じ、最終段の第ｎシ−ルド電極４ｎに得られた直流
高電圧は加速器の高電圧タ−ミナル６に印加される。2. Description of the Related Art FIG. 3 is a circuit diagram of a Schenkel-type rectifying and multiplying type DC high voltage generator used as an MV (megavolt) class high voltage power source in an electrostatic accelerator. Frequency power of several 10kHz from the high-frequency oscillator 1 is applied to the primary coil 2 1 booster coil 2, the secondary coil 2 2 midpoint is grounded high-frequency (RF) electrodes 3 1 and 3
Connect to 2 . These RF electrodes are intended cylindrical semi-cylindrical shape with two split, shea but inside which is also semi-cylindrical so as to face the electrodes to a narrow number n of the width of the RF electrode - field electrode 4 1, 4 2 , 4 3, ... 4n are arranged, and an electrostatic capacitance is formed between the RF electrode and the shield electrode. Shield electrode 4
1 is grounded, and a rectifier 5 is placed between each shield electrode.
Are connected with the polarities shown. The entire rectifying and multiplying unit except the high frequency oscillator 1 is arranged in a sealed container filled with SF 6 gas. The third sheet - the shield electrode 4 3 subsequent sheet - the shield electrode, sequentially DC voltage is generated which boosts the secondary coil 2 2 voltage, the n-th sheet of the last stage - the DC high obtained in shield electrode 4n The voltage is applied to the high voltage terminal 6 of the accelerator.
【０００３】ところで、かかる直流高電圧発生装置の整
流逓倍部はかなり大型のものである。発生電圧３ＭＶの
ものについて逓倍整流部のＲＦ電極とシ−ルド電極の寸
法、配置の一例を図４に示す。ＲＦ電極の印加電圧は±
２００ｋＶ、同電極の内径は２１４０ｍｍであり、シ−
ルド電極は、外径１３００ｍｍ、電極幅５５ｍｍ、電極
間隔２０ｍｍ、電極数は５６である。これから、整流逓
倍部の長さ（シ−ルド電極４2から４56までとする）
は、（５５＋２０）×（５６／２）−２０＝２０８０ｍ
ｍに達する。By the way, the rectifying and multiplying unit of such a DC high voltage generator is quite large. FIG. 4 shows an example of dimensions and arrangement of the RF electrode and the shield electrode of the multiplying rectification unit for the generated voltage of 3 MV. The voltage applied to the RF electrode is ±
200 kV, the inner diameter of the electrode is 2140 mm,
The field electrode has an outer diameter of 1300 mm, an electrode width of 55 mm, an electrode interval of 20 mm, and the number of electrodes is 56. Now, the length of the rectifying multiplier (sheet - and the shield electrode 4 2 to 4 56)
Is (55 + 20) × (56/2) −20 = 2080 m
reach m.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、整流逓倍部
を小型化したシェンケル型の直流高電圧発生装置を提供
することを目的とするものである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a Schenkel type DC high voltage generator in which the rectifying and multiplying unit is downsized.
【０００５】[0005]
【課題を解決するための手段】本発明は、シェンケル型
の直流高電圧発生装置において、整流逓倍部のシ−ルド
電極の径を、高圧側から接地側に向かうにつれて大きく
し、かつシ−ルド電極の幅を、高圧側から接地側に向か
うにつれて小さくなるように構成したことを主たる特徴
とするものである。かかる構成により、整流逓倍部の長
さ寸法におけるシ−ルド電極の幅の合計が従来例より減
少し、整流逓倍部の小型化が実現される。そして、各シ
−ルド電極とＲＦ電極間の電場の大きさは最終段部の電
場の最大値内に抑えられており、各電極間の静電容量を
従来例における値と同じに保つことができ、回路的にも
従来例と同じにすることができる。According to the present invention, in a Schenkel type DC high voltage generator, the diameter of the shield electrode of the rectifying and multiplying section is increased from the high voltage side to the ground side, and the shield is provided. The main feature is that the width of the electrode becomes smaller from the high voltage side toward the ground side. With such a configuration, the total width of the shield electrodes in the length dimension of the rectifying and multiplying unit is reduced as compared with the conventional example, and the rectifying and multiplying unit can be downsized. The magnitude of the electric field between each shield electrode and the RF electrode is suppressed within the maximum value of the electric field at the final stage, and the capacitance between the electrodes can be kept the same as the value in the conventional example. The circuit can be the same as the conventional example.
【０００６】 更に、同一寸法である適数個の整流逓倍
部のシールド電極を一つのブロックとし、全シールド電
極を複数の前記ブロックに分割し、高圧側から接地側に
向かうにつれて、各ブロック毎にシールド電極の径を順
次大きくし、かつ高圧側から接地側に向かうにつれて各
ブロックごとにシールド電極の幅を小さくなるように構
成したことを特徴とする。これにより、各ブロック内で
は同一寸法のシールド電極を使用できることとなり、整
流逓倍部の小型化に当たり、その製作を容易にする。Furthermore, the shield electrode of several rectifier multiplier applied is the same size as one of the block, dividing the entire shield electrode to the plurality of blocks, the ground side from the high pressure side
Toward the forward diameter of the shield electrode in each block
Next, increase the size, and increase from the high voltage side to the grounding side.
Designed to reduce the width of the shield electrode for each block.
It is characterized in that form. As a result, the shield electrodes having the same size can be used in each block, which facilitates the production of the rectifying and multiplying unit when it is downsized.
【０００７】[0007]
【実施例】整流逓倍部の小型化への方策、全体の長さを
短縮することを考えるとき、シ−ルド電極とＲＦ電極間
の静電容量は少なくとも従来のものの値を維持しなけれ
ばならない。この点、整流逓倍部全長の短縮に際し、シ
−ルド電極の幅を狭くするには、シ−ルド電極とＲＦ電
極の間隔を狭くできれば、その実現が可能となる。前示
図４において、ＲＦ電極３1、３2は昇圧コイル部２の２
次コイル２2により±２００ｋＶの電位にあり、最終の
直流発生電圧は３ＭＶ、シ−ルド電極数５６から、第ｋ
シ−ルド電極４ｋの電位は３０００×（ｋ−１）／５５
〔ｋＶ〕となる。シ−ルド電極とＲＦ電極間における最
大の電場は第５６シ−ルド電極４56部に生じ、第５６シ
−ルド電極電位をＶ、シ−ルド電極外径の半径をＲ1、
ＲＦ電極内径の半径をＲ2とすると、電場の最大値は、
（Ｖ／Ｒ1）／ｌｎ（Ｒ2／Ｒ1)＝（3200／650）／ｌｎ（1070／650)
＝９．８〔ｋＶ／ｍｍ〕
となり、第５５シ−ルド電極以前のシ−ルド電極とＲＦ
電極間の電場はこの値より小さく、第１シ−ルド電極４
1とＲＦ電極間の電場の最大値は、
９．８×２００／３２００＝０．６１〔ｋＶ／ｍｍ〕
に過ぎない。したがって、電場が９．８〔ｋＶ／ｍｍ〕
を超えない限度まで第１シ−ルド電極４1ないし第５５
シ−ルド電極４55の径をそれぞれ大きくすることがで
き、そうすれば各シ−ルド電極の幅を各シ−ルド電極と
ＲＦ電極との間隔に逆比例した値まで小さくすることが
できる。つまり、シ−ルド電極とＲＦ電極間の静電容量
を従来のものと同じ値に保ったまま整流逓倍部を小型化
できることになる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS When considering a measure for reducing the size of a rectifying and multiplying unit, and shortening the overall length, the capacitance between the shield electrode and the RF electrode must be maintained at least at the conventional value. . In this respect, in order to reduce the width of the shield electrode when shortening the total length of the rectifying / multiplying unit, it is possible to realize it by narrowing the interval between the shield electrode and the RF electrode. In FIG. 4 shown above, the RF electrodes 3 1 and 3 2 are the same as those of the booster coil unit 2.
The potential is ± 200 kV due to the next coil 2 2 , the final DC voltage is 3 MV, and the number of shield electrodes is 56.
The potential of the shield electrode 4k is 3000 × (k-1) / 55
[KV]. Sheet - maximum of the electric field 56 sheet between the shield electrode and the RF electrode - occur shield electrode 4 56 parts of a 56 - a shield electrode potential V, sheet - the radius of the shield electrode outer diameter R 1,
When the radius of the inner diameter of the RF electrode is R 2 , the maximum value of the electric field is (V / R 1 ) / ln (R 2 / R 1 ) = (3200/650) / ln (1070/650) = 9.8 [ kV / mm] and the shield electrode and RF before the 55th shield electrode
The electric field between the electrodes is smaller than this value, and the first shield electrode 4
The maximum value of the electric field between 1 and the RF electrode is only 9.8 × 200/3200 = 0.61 [kV / mm]. Therefore, the electric field is 9.8 [kV / mm].
The first sheet to the extent not exceeding - shield electrode 4 1 to 55
Sheet - it is possible to increase the diameter of the shield electrode 4 55 respectively, each sheet if so - can be reduced to inversely proportional value to the distance between the shield electrode and the RF electrode - the width of the shield electrode each sheet. That is, the rectifying and multiplying unit can be miniaturized while keeping the electrostatic capacitance between the shield electrode and the RF electrode at the same value as the conventional one.
【０００８】図１はシ−ルド電極群全体の外形を円錐状
に形成した実施例を示す。ｎ個のシ−ルド電極４1ない
し４ｎの径は、高圧側から接地側に向かうにつれて、順
次大きくなるように構成し、全体の外形形状は円錐状と
されている。また、各シ−ルド電極の幅は、高圧側から
低圧側に向かうにつれ、小さくなるように構成されてい
る。一具体例として、ＲＦ電極内径φｒ＝２１４０〔ｍ
ｍ〕、シ−ルド電極外径の最小値φｓｎ＝１３００〔ｍ
ｍ〕、同じく最大値φｓ1＝１９８８〔ｍｍ〕、シ−ル
ド電極数ｎ＝５６、シ−ルド電極間隔を２０〔ｍｍ〕と
し、
第ｋシ−ルド電極の外径φｓｋを １９８８−１２．５（ｋ−１）〔ｍｍ〕、
幅 Ｗｋを １０＋０．８２（ｋ−１）〔ｍｍ〕
に選ぶ。このとき第１シ−ルド電極４1とＲＦ電極３間
の電場の最大値は２．７〔ｋｖ／ｍｍ〕に過ぎず、他の
シ−ルド電極とＲＦ電極間についても９．８〔ｋＶ／ｍ
ｍ〕を超えることがない。また、各シ−ルド電極とＲＦ
電極間隔と各シ−ルド電極の幅との積はほぼ一定に保た
れるので、各シ−ルド電極とＲＦ電極間の静電容量は一
定である。したがって、回路的には図４に示した従来例
と同等である。整流逓倍部長さＬは約１４５０ｍｍとな
り、従来例より６３０ｍｍ短く、大幅に短縮される。FIG. 1 shows an embodiment in which the outer shape of the entire shield electrode group is formed in a conical shape. The diameters of the n shield electrodes 4 1 to 4 n are configured so as to gradually increase from the high voltage side toward the ground side, and the overall outer shape is a conical shape. Further, the width of each shield electrode is configured to become smaller from the high voltage side toward the low voltage side. As a specific example, the inner diameter of the RF electrode φr = 2140 [m
m], the minimum value of the shield electrode outer diameter φsn = 1300 [m
m], the maximum value φs 1 = 1988 [mm], the number of shield electrodes n = 56, the shield electrode spacing is 20 mm, and the outer diameter φsk of the kth shield electrode is 1988-12. 5 (k-1) [mm], and the width Wk is selected to be 10 + 0.82 (k-1) [mm]. At this time, the first sheet - the maximum value of the electric field between the shield electrodes 4 1 and the RF electrode 3 is only 2.7 [kv / mm], other sheet - 9.8 [kV also between shield electrodes and the RF electrode / M
m] is not exceeded. In addition, each shield electrode and RF
Since the product of the electrode spacing and the width of each shield electrode is kept substantially constant, the capacitance between each shield electrode and the RF electrode is constant. Therefore, the circuit is equivalent to the conventional example shown in FIG. The length L of the rectifying and multiplying unit is about 1450 mm, which is 630 mm shorter than that of the conventional example, which is a great reduction.
【０００９】図２は他の実施例を示し、上述の実施例の
ように、全てのシ−ルド電極の外径、幅を異ならせるの
は実際上不便であるから、適数個のシ−ルド電極を１ブ
ロックとし、全シ−ルド電極を複数のブロックＡ、Ｂ、
……Ｎに分割し、各ブロック内ではシ−ルド電極の外
径、幅を一定とし、ブロック毎に、外径を高圧側から低
圧側に向かうにつれ大きくし、幅については高圧側から
低圧側に向かうにつれ小さくなるように構成する。FIG. 2 shows another embodiment. Since it is practically inconvenient to make the outer diameters and widths of all shield electrodes different from each other as in the above-mentioned embodiment, a proper number of shields are used. The shield electrode is one block, and all shield electrodes are a plurality of blocks A, B,
...... Divided into N, keeping the outer diameter and width of the shield electrode constant in each block, increasing the outer diameter from the high pressure side to the low pressure side in each block, and the width from the high pressure side to the low pressure side. It will be configured to become smaller as it goes to.
【００１０】[0010]
【発明の効果】本発明は以上説明したように構成されて
いるので、整流逓倍部の長さ寸法におけるシ−ルド電極
の幅の合計が従来例より減少し、シェンケル型直流高電
圧発生装置の小型化が実現される。そして、各シ−ルド
電極とＲＦ電極間の電場の大きさは最終段部、最高圧部
の電場の最大値内に抑えられ、各電極間の静電容量を従
来例における値と同じに保つことができ、回路的にも従
来例と同じにすることができる。Since the present invention is constructed as described above, the total width of the shield electrodes in the length dimension of the rectifying and multiplying section is reduced as compared with the conventional example, and the Schenkel type DC high voltage generator is provided. Miniaturization is realized. Then, the magnitude of the electric field between each shield electrode and the RF electrode is suppressed within the maximum value of the electric field at the final stage portion and the highest pressure portion, and the capacitance between the electrodes is kept the same as the value in the conventional example. The circuit can be the same as the conventional example.
【００１１】 更に、同一寸法である適数個の整流逓倍
部のシールド電極を一つのブロックとし、全シールド電
極を複数の前記ブロックに分割し、高圧側から接地側に
向かうにつれて、各ブロック毎にシールド電極の径を順
次大きくし、かつ高圧側から接地側に向かうにつれて各
ブロックごとにシールド電極の幅を小さくなるように構
成したことにより、各ブロック内では同一寸法のシール
ド電極を使用できるから、整流逓倍部の小型化を、その
製作上からも容易に実施することができる。Furthermore, the shield electrode of several rectifier multiplier applied is the same size as one of the block, dividing the entire shield electrode to the plurality of blocks, the ground side from the high pressure side
Toward the forward diameter of the shield electrode in each block
Next, increase the size, and increase from the high voltage side to the grounding side.
Designed to reduce the width of the shield electrode for each block.
Since the shield electrodes having the same size can be used in each block by the construction, it is possible to easily reduce the size of the rectifying and multiplying unit from the viewpoint of manufacturing.
【図１】本発明の実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】他の実施例の構成図である。FIG. 2 is a configuration diagram of another embodiment.
【図３】シェンケル型直流高電圧発生装置の回路図であ
る。FIG. 3 is a circuit diagram of a Schenkel type DC high voltage generator.
【図４】従来例の構成図である。FIG. 4 is a configuration diagram of a conventional example.
1 高周波発振器 2 昇圧コイル部 31，32 ＲＦ（高周波）電極 41〜4n シ−ルド電極 5 整流器1 High frequency oscillator 2 Step-up coil section 3 1 , 3 2 RF (high frequency) electrode 4 1 to 4n shield electrode 5 Rectifier
Claims (2)
いて、整流逓倍部のシールド電極の径を、高圧側から接
地側に向かうにつれて順次大きくし、かつシールド電極
の幅を、高圧側から接地側に向かうにつれて小さくなる
ように構成したことを特徴とする直流高電圧発生装置1. In a Schenkel type DC high voltage generator, the diameter of the shield electrode of the rectifying and multiplying part is gradually increased from the high voltage side to the ground side, and the width of the shield electrode is changed from the high voltage side to the ground side. DC high voltage generator characterized in that it becomes smaller as it goes toward
いて、同一寸法である適数個の整流逓倍部のシールド電
極を一つのブロックとし、全シールド電極を複数の前記
ブロックに分割し、高圧側から接地側に向かうにつれ
て、各ブロック毎にシールド電極の径を順次大きくし、
かつ高圧側から接地側に向かうにつれて各ブロックごと
にシールド電極の幅を小さくなるように構成したことを
特徴とする直流高電圧発生装置。2. A Schenkel-type DC high voltage generator , comprising a suitable number of rectifying and multiplying parts of the same size, each having a shield voltage.
As the single block poles, dividing the entire shield electrode to the plurality of <br/> block, directed from the high pressure side to the ground side
The diameter of the shield electrode for each block ,
And each block goes from the high voltage side to the ground side
A DC high voltage generator characterized in that the width of the shield electrode is reduced .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24648991A JP3406323B2 (en) | 1991-09-02 | 1991-09-02 | DC high voltage generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24648991A JP3406323B2 (en) | 1991-09-02 | 1991-09-02 | DC high voltage generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0564453A JPH0564453A (en) | 1993-03-12 |
| JP3406323B2 true JP3406323B2 (en) | 2003-05-12 |
Family
ID=17149164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24648991A Expired - Fee Related JP3406323B2 (en) | 1991-09-02 | 1991-09-02 | DC high voltage generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3406323B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9966872B2 (en) * | 2010-06-01 | 2018-05-08 | Koninklijke Philips N.V. | Voltage rectifier with specific diode arrangement |
-
1991
- 1991-09-02 JP JP24648991A patent/JP3406323B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564453A (en) | 1993-03-12 |
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