JP3405494B2 - Chip type diode module - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type diode and a chip type diode module.

[0002]

2. Description of the Related Art As a diode sealing structure, a DHD (double heat sink diode) utilizing a glass tube (glass sleeve) and a resin sealing type structure in which a resin is sealed are known.

The DHD has a structure in which a diode chip is sandwiched between end faces of large diameter portions of two stepped leads inserted in a glass sleeve, and the glass sleeve is melted and hermetically sealed. For DHD, "Electronic Information and Communication Handbook Volume 1" published by Ohmsha, March 1988
Issued 30 days, listed on P765 and P766.

In the resin-sealed diode, after fixing the diode chip on the support plate of the lead frame, the electrode of the diode chip and the tip of the lead are connected by a conductive wire, and then the support plate, the diode chip, It is formed by sealing the tip portions of the wires and the leads with a mold such as a transfer mold, and cutting and removing the unnecessary lead frame portion. For resin-sealed diodes, please refer to the catalog issued by ROHM (catalog
No. 3630 '93 .10), P100.

This catalog also describes a three-terminal resin-sealed diode (diode module) in which two diode chips are incorporated and which serves as an anode common or a cathode common. Further, among commercially available products, there is also a 6-terminal resin-sealed diode (MOP type) in which four diode chips are incorporated in an anode common and a cathode common.

[0006]

At present, the outer dimensions of the package are becoming lighter, thinner, shorter, and smaller, and in the DHD and the resin-sealed type diode, the outer dimension of the package is small because of the structure of components and the manufacturing method. It has become difficult to do. For example, in a three-terminal resin-sealed diode (diode module) that serves as an anode common and a cathode common, the dimensions are 2.1 mm in length and 2.0 mm in width (length from lead end to lead end). . The size of a 6-terminal resin-sealed diode (diode module) incorporating four diode chips is further increased.

With a DHD having good airtightness, a three-terminal diode module that serves as an anode common or a cathode common cannot be assembled.

In the resin-sealed diode, since the package is resin (resin), the moisture resistance is not high.

An object of the present invention is to provide a chip type diode and a chip type diode module which can achieve miniaturization.

Another object of the present invention is to provide a chip type diode and a chip type diode module having high airtightness.

The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.

[0012]

The outline of the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) A chip-type diode is a spacer made of an insulating plate having an insertion hole for inserting a diode chip, and two wiring boards attached to the front and back surfaces of the spacer through an insulating adhesive. A diode chip that is inserted into the insertion hole and has one electrode connected to the wiring of the one wiring board and the other electrode connected to the wiring of the other wiring board;
It has a spacer and a wiring board and external electrodes respectively formed on both end portions of the laminated body. The external electrode is made of a conductor formed by coating on the surface of the laminated body, and is electrically connected to the wiring of one wiring board or the wiring of the other wiring board. The surface of the laminated body between the external electrodes is covered with an insulating protective film.

(2) The chip type diode module is
A spacer made of an insulating plate having two insertion holes into which the diode chip is inserted, two wiring boards attached respectively to the front and back surfaces of the spacer via an insulating adhesive, and the wiring board is put into the insertion hole. And two diode chips each having one electrode connected to a predetermined wiring of the one or the other wiring board and the other electrode connected to a predetermined wiring of the other or the one wiring board, the wiring board, the spacer, The wiring board and the laminated body have three or more external electrodes formed at both end portions of the laminated body. Adjacent electrodes are insulated by a notch at one end of the stack. Therefore, the two external electrodes at one end are independent electrodes connected to the electrodes unique to each diode chip, and the external electrodes at the other end are common electrodes connected to the electrodes of the plurality of diode chips. The chip type diode module constitutes an anode common circuit.

(3) In the means (2), a plurality of diodes are incorporated, and the anode electrode and the cathode electrode of each diode are provided as independent electrodes on both ends of the laminated body.

[0016]

According to the means (1), the diode chip is incorporated between the two wiring boards with the spacer interposed therebetween,
Since the external electrodes are formed on both ends of the laminated body composed of the wiring board, the spacer, and the wiring board, it is possible to provide a chip-type diode having a small size and excellent airtightness.

According to the above-mentioned means (2), a plurality of diode chips are incorporated between two wiring boards having a spacer interposed therebetween, and the diode chips are respectively attached to both ends of a laminated body composed of the wiring board, the spacer and the wiring board. Since it has a structure in which one to a plurality of external electrodes are formed, it is possible to provide a chip-type diode module that is small and has excellent airtightness.

According to the above-mentioned means (3), it is possible to provide a small chip type diode module in which a plurality of diodes are incorporated in parallel with each other and which is highly airtight.

[0019]

Embodiments of the present invention will now be described in detail with reference to the drawings.

In all the drawings for explaining the embodiments, parts having the same functions are designated by the same reference numerals, and the repeated description thereof will be omitted.

(Embodiment 1) FIG. 1 is a perspective view showing a chip type diode which is Embodiment 1 of the present invention, FIG. 2 is a sectional view of the chip type diode, and FIGS. FIG. 3 is a diagram relating to manufacturing of a diode, FIG. 3 is an exploded perspective view showing a correlation between two wiring boards and a spacer, FIG. 4 is a perspective view showing a manufacturing state of a wiring board, and FIG. 5 is a manufacturing state of spacers. 6 is a perspective view showing a state in which a wiring board, a spacer, and a wiring board are laminated, FIG. 7 is a perspective view showing a state in which external electrodes are formed at both ends of a laminated body, and FIG. It is a perspective view showing the state where a protective film was formed on the surface of a layered product.

As shown in FIG. 1, the chip type diode 1 of the first embodiment has a thin rectangular body 2 in appearance, and has external electrodes 3 and 4 at both ends thereof. The surface of the rectangular body 2 between the external electrodes 3 and 4 is covered with a protective film 6 formed by applying and firing a glass paste. The chip type diode 1 has a length of 1.0 mm, a width of 0.5 mm, and a height of 0.5 mm.

The chip type diode 1 is shown in FIGS.
As shown in FIG. 3, a structure in which an insulating spacer 9 made of a ceramic substrate is superposed and bonded between the ceramic substrate (wiring substrate) 7 and the ceramic substrate (wiring substrate) 8 with adhesives 10 and 11 (lamination) Structure). The ceramic substrate 7, the spacer 9 and the ceramic substrate 8 are
In each case, the thickness is as thin as about 0.1 mm.

An insertion hole 14 into which a diode chip 13 having a bump electrode 12 is inserted is provided in the central portion of the spacer 9. Further, when the ceramic substrate 7 and the ceramic substrate 8 are bonded to the spacer 9, wirings 15 and 16 of which one end comes to the insertion hole 14 portion
Are provided on the upper surface of the ceramic substrate 7 and the lower surface of the ceramic substrate 8. The wiring 15 reaches the left end of the ceramic substrate 7 and is electrically connected to the external electrode 3, and the wiring 16 reaches the right end of the ceramic substrate 8 and is electrically connected to the external electrode 4.

A laminate 17 composed of a rectangular body obtained by bonding the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 together.
External electrodes 3 and 4 are formed on both end portions of. The external electrode 3 is electrically connected to the wiring 15 as described above, and the external electrode 4 is electrically connected to the wiring 16. The external electrodes 3 and 4 are formed by applying a conductive paste to both end portions of the laminated body 17 and then firing the applied paste.

The surface of the laminated body 17 between the external electrodes 3 and 4 is covered with a protective film 6 formed by applying and firing a glass paste.

In the chip type diode according to the first embodiment, the diode chip 13 having the bump electrode 12 is provided with the spacer 9
Since the diode chip 13 is inserted between the two wiring boards (ceramic boards 7 and 8) and the external electrodes 3 and 4 are formed at both ends of the wiring board, The vertical and horizontal sizes of the die diode 1 are reduced to 1.0 mm and 0.5 mm, for example. Also,
Since no wire bonding is required, the height of the chip type diode 1 can be reduced to 0.5 mm, for example. As a result, the same size as that of the 1005 product including the chip resistor and the chip capacitor can be obtained.

Next, a method of manufacturing the chip type diode 1 of the first embodiment will be described.

First, as shown in FIG. 3, two wiring substrates (ceramic substrates 7 and 8) and a spacer 9 made of one ceramic plate are prepared. The ceramic substrate 7, the spacer 9 and the ceramic substrate 8 are all ceramic plates having the same outer dimensions, and for example, a length of 1.0 mm.
Weak, slightly less than 0.5 mm, and about 0.1 mm in thickness.

The spacer 9 is provided with a square insertion hole 14 at the center thereof. A diode chip 13 having a bump electrode 12 on one surface is inserted into the insertion hole 14.

Wirings 15 and 16 are provided on the upper surface of the ceramic substrate 7 and the lower surface of the ceramic substrate 8. These wirings 15 and 16 extend from the ends of the ceramic substrate 7 and the ceramic substrate 8 to the central portion along the center line, and the wirings 15 and 16 are symmetrical to each other. That is, the wiring 15 is the ceramic substrate 7
To the left end, and the wiring 16 reaches the right end of the ceramic substrate 8. Then, when the spacer 9 is overlaid on the ceramic substrate 7 and the diode chip 13 is inserted into the insertion hole 14 of the spacer 9, the diode chip 1
3 lower electrodes are placed on the wiring 15 of the ceramic substrate 7,
When the ceramic substrate 8 is overlaid on the spacer 9, the wiring 16 of the ceramic substrate 8 overlaps the bump electrode 12 of the diode chip 13.

As shown in FIGS. 4 and 5, the ceramic substrates 7 and 8 and the spacers 9 are formed by dividing one ceramic plate 20 and 21 vertically and horizontally. FIG. 4 shows a ceramic plate 20 for manufacturing the ceramic substrate 7 and the ceramic substrate 8. Thickness 0.
After preparing a ceramic plate material of about 1 mm, scribe lines 24 are formed in the vertical and horizontal directions by stamping. Further, the wirings 15 and the wirings 16 to be the wirings 16 are formed by screen printing, and then the ceramic plate material is fired, whereby the ceramic substrates 23 to be the ceramic substrates 7 and 8 are formed vertically and horizontally. Therefore,
A large number of ceramic substrates 23 are manufactured by cutting the ceramic plate 20 along the scribe lines 24.

The ceramic substrate 7 is obtained by using the ceramic substrate 23 with the wiring 22 on the upper side and the end of the wiring 22 on the left side, and the wiring 22 is on the lower side and the end of the wiring 22 on the right side. The ceramic substrate 8 is obtained by using in this way.

FIG. 5 shows a ceramic plate 21 for manufacturing the spacer 9. After preparing a ceramic plate material with a thickness of about 0.1 mm, scribing line 25
Are formed by stamping. In addition, the diode chip 13
The insertion hole 14 for inserting is formed by a punch. Then, by firing the ceramic plate material, the spacers 9 are formed vertically and horizontally. Therefore, the spacer 9 is manufactured by cutting the ceramic plate 21 along the scribe line 25.

Ceramic substrates 7, 8 and spacer 9
Can be manufactured by a batch process in which one ceramic plate 20 or 21 (ceramic plate material) is processed, so the processing cost is low.

Next, as shown in FIG. 6, a spacer 9 is positioned and superposed on the ceramic substrate 7 with an insulating adhesive 10 interposed therebetween. Further, the diode chip 13 is put in the insertion hole 14 of the spacer 9, and the lower electrode 26 of the diode chip 13 is placed on the wiring 15 extending to the bottom of the insertion hole 14.
To be listed. Then, the ceramic substrate 8 is positioned and stacked on the spacer 9 with the adhesive 11 interposed therebetween.
As a result, the wiring 16 overlaps the bump electrode 12 of the diode chip 13.

Next, the ceramic substrate 7, the spacers 9,
Pressurize the ceramic substrate 8 so that it contacts with a predetermined pressure.
While heating, the adhesives 10 and 11 are hardened and the electrodes of the diode chip 13 are connected. As a result, the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 are integrated into a laminated body 17. The lower electrode 26 of the diode chip 13 is electrically connected to the wiring 15 of the ceramic substrate 7, and the bump electrode 12 of the diode chip 13 is electrically connected to the wiring 16 of the ceramic substrate 8 (see FIG. 2).

Next, as shown in FIG. 7, a conductive paste is applied to both end portions of the laminate 17 and then baked,
The external electrodes 3 and 4 are formed. After that, Ni plating and solder plating (not shown) are applied to the surfaces of the external electrodes 3 and 4 by electrolytic barrel plating or the like.

Next, as shown in FIG.
A glass-based paste is applied to the surface of the laminated body 17 between the four and baked to form the protective film 6. As a result, the airtightness and moisture resistance of the chip type diode 1 are further improved.

According to the method of manufacturing the chip type diode 1 of the first embodiment, the spacer 9 is superposed on the ceramic substrate 7 with the adhesive 10 interposed therebetween, and the diode chip 13 is put in the insertion hole 14 of the spacer 9. Further, the ceramic substrate 8 is superposed on the spacer 9 via the adhesive 11 to form the laminated body 17, and then the external electrodes 3 and 4 are formed at both ends of the laminated body 17, and the space between the external electrodes 3 and 4 is formed. Since it can be formed by covering the surface of the laminated body 17 with the protective film 6, the manufacturing becomes easy and the manufacturing cost can be reduced.

Further, since a large number of the ceramic substrates 7 and 8 and the spacer 9 can be formed at once by batch processing, the manufacturing cost can be reduced.

(Embodiment 2) FIG. 9 is a partially cutaway plan view showing a chip type diode module according to a second embodiment of the present invention, and FIG. 10 is an equivalent circuit diagram of the chip type diode module of the second embodiment. 11, FIG. 11 is a sectional view taken along the line AA of FIG. 9, FIG. 12 is a sectional view taken along the line BB of FIG. 9, and FIG.
Is a perspective view showing the external appearance of the chip type diode module of the second embodiment, and FIG. 14 is an exploded perspective view showing the correlation between two wiring boards and spacers in the manufacture of the chip type diode module of the second embodiment.

As shown in FIGS. 9, 11 and 12, the chip type diode module 30 of the second embodiment has the same structure as that of the first embodiment except that the shapes of the ceramic substrates 7 and 8 and the spacer 9 are changed. The spacer 9 is provided with two insertion holes into which the diode chips 13a and 13b are inserted (insertion holes 14a and 14b), and in the ceramic substrate 7 and the ceramic substrate 8, two diode chips 1 are provided.
Electrodes 3a and 13b (bump electrode 12, lower electrode 2
The wiring pattern connected to 6) has a module structure. Further, one end (the right end in FIG. 9 ) of the laminated body 17 including the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 is provided with a notch 31, and two independent electrodes 32, 3 are provided.
3, and the other end (left end) is a single common electrode 34. And two diodes (diode chip) 1
3a and 13b are connected so that they serve as an anode common, as shown in the equivalent circuit of FIG.

As shown in FIG. 13, the chip type diode module 30 of the second embodiment has a thin rectangular body 2 in appearance, and has a common electrode 34 at the left end and a notch 31 at the right end.
It is configured to have two independent electrodes 32 and 33 sandwiching it. That is, the independent electrodes 32 and 33 are formed in a portion shallower than the cut 31.

Further, the common electrode 34 and the independent electrode 32,
The surface of the rectangular body 2 between 33 is coated with glass paste,
It is covered with a protective film 6 formed by firing.

The chip type diode module 30 of the second embodiment has a length of 1.0 mm, a width of 0.5 mm and a height of 0.5 m.
It has become m.

As shown in FIGS. 11 and 12, the chip type diode module 30 has an insulating spacer 9 made of a ceramic substrate between the ceramic substrate (wiring substrate) 7 and the ceramic substrate (wiring substrate) 8. Adhesive 1
Structure in which 0 and 11 are stacked and laminated (laminated structure)
Has become. The thickness of each of the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 is as thin as about 0.1 mm.

In the central portion of the spacer 9, as shown in FIG. 14, the insertion hole 1 into which the diode chips 13a and 13b having the bump electrodes 12a and 12b on one surface are inserted.
4a and 14b are provided in parallel. Further, when the ceramic substrate 7 and the ceramic substrate 8 are bonded to the spacer 9, the wirings 15a, 15b, 16a, 16b whose one ends come into the insertion holes 14a, 14b are the upper surface of the ceramic substrate 7 and the ceramic substrate 8 respectively. It is provided on the bottom surface.

The wirings 15a and 15b extend parallel to each other and reach the left end of the ceramic substrate 7 to be electrically connected to the common electrode 34. The wirings 16a and 16b extend parallel to each other and extend to the right end of the ceramic substrate 8. They arrive and are electrically connected to the independent electrodes 32 and 33, respectively.

The common electrode 34 and the independent electrodes 32, 3
3 is formed by applying a conductive paste to predetermined portions of both end portions of the laminated body 17 and then firing it.

Further, the common electrode 34 and the independent electrodes 32, 33
The surface of the laminated body 17 in between is covered with a protective film 6 formed by applying and baking a glass-based paste.

In the chip type diode module 30 of the second embodiment, the two diode chips 13a and 13b having the bump electrodes 12a and 12b are inserted into the two insertion holes 14a and 14b of the spacer 9 to form two wiring boards ( Between the ceramic substrates 7 and 8) diode chips 13a and 13b
And the independent electrodes 32, 33 on both ends of the wiring board.
Since the structure is such that the common electrode 34 is formed, the vertical and horizontal sizes of the chip type diode module 30 are reduced to, for example, 1.0 mm and 0.5 mm. Also,
Since no wire bonding is required, the height of the chip type diode module 30 is, for example, 0.5 m.
It can be as thin as m. As a result, the same size as that of the 1005 product including the chip resistor and the chip capacitor can be obtained.

The chip type diode module 30 of the second embodiment has a structure in which three ceramic substrates are laminated and the diode chips 13a and 13b are incorporated in the insertion holes 14a and 14b provided in the spacers of the inner layer. And the structure in which the laminated body 17 formed by laminating three ceramic substrates is covered with the protective film 6 formed by applying and firing a glass-based paste, the airtightness is increased and the moisture resistance is improved. improves.

Next, a method of manufacturing the chip type diode module 30 of the second embodiment will be briefly described.

[0055] As shown in FIG. 14, the two wiring boards (ceramic substrate 7, 8), the spacer 9 is provided comprising a single ceramic plate. The ceramic substrate 7, the spacer 9, and the ceramic substrate 8 are all ceramic plates having the same outer dimensions, and are, for example, a little less than 1.0 mm in length, a little less than 0.5 mm in width, and a thickness of about 0.1 mm.

At the central portion of the spacer 9, a diode chip 13 having bump electrodes 12a and 12b on one surface is formed.
Insertion holes 14a and 14b into which a and 13b are inserted are provided in parallel.

On the upper surface of the ceramic substrate 7 and the lower surface of the ceramic substrate 8, wirings 15a, 15b, 16a,
16b is provided. These wirings 15a, 15b,
16a and 16b extend from the ends of the ceramic substrate 7 and the ceramic substrate 8 in parallel with each other in the central portions and extend to the central portions, and the wirings 15a and 15b and the wirings 16a and 16b.
b has a mutually symmetrical pattern.

That is, the wirings 15a and 15b reach the left end of the ceramic substrate 7, and the wirings 16a and 16b reach the right end of the ceramic substrate 8. Then, the spacer 9 is overlaid on the ceramic substrate 7, and the diode chip 13 is inserted into the two insertion holes 14 a and 14 b of the spacer 9.
When a and 13b are inserted, the diode chip 13a,
When the lower electrodes 26a and 26b of 13b are placed on the wirings 15a and 15b of the ceramic substrate 7 and the ceramic substrate 8 is overlaid on the spacer 9, the diode chip 13
The wirings 16a and 16b of the ceramic substrate 8 overlap the bump electrodes 12a and 12b of a and 13b.

Further, in the central portions of the right ends of the ceramic substrate 7, the spacer 9 and the ceramic substrate 8, cutouts 31a, 31b, for forming independent electrodes 32, 33, are formed.
31c is provided.

The ceramic substrates 7 and 8 and the spacer 9 have different patterns, but are formed by vertically and horizontally dividing one ceramic plate as in the first embodiment. In this case, since the ceramic substrate 7 and the ceramic substrate 8 have different wiring patterns, they must be manufactured separately. These ceramic substrate 7, spacer 9 and ceramic substrate 8 are manufactured based on a ceramic plate material having a thickness of about 0.1 mm.

That is, in the case of the ceramic substrate 7 or the ceramic substrate 8, after preparing a ceramic plate material having a thickness of about 0.1 mm, scribe lines are formed in the vertical and horizontal directions by engraving, and the notches 31a, 31c are punched out. Form. After that, the wirings 15a and 15b and the wirings 16a and 16b are formed by screen printing.
After that, the ceramic plate material is fired and then cut along the scribe line to produce a large number of ceramic substrates 7 and 8.

In the case of the spacer 9, the thickness is 0.1 m.
After preparing a ceramic plate material of about m, scribe lines are engraved vertically and horizontally, and then the diode chip 13
Insert holes 14a and 14b for inserting a and 13b and notch 31b are formed by punching. Next, a large number of spacers 9 are manufactured by firing the ceramic plate material and then cutting the ceramic plate material along the scribe lines.

Ceramic substrates 7, 8 and spacer 9
Since it can be manufactured by a batch process of processing one ceramic plate (ceramic plate material), the processing cost is low.

Next, the spacer 9 is positioned and superposed on the ceramic substrate 7 via the insulating adhesive 10. In addition, the diode chips 13a and 13b are inserted into the insertion holes 14a and 14b of the spacer 9 so that the insertion holes 14a and 1b
The lower electrodes 26a, 26b of the diode chips 13a, 13b are placed on the wirings 15a, 15b extending to the bottom of 4b. Then, the ceramic substrate 8 is positioned and stacked on the spacer 9 with the adhesive 11 interposed therebetween. Thereby, the bump electrodes 1 of the diode chips 13a and 13b are
The wirings 16a and 16b overlap the 2a and 12b.

Next, the ceramic substrate 7, the spacers 9,
Pressurize the ceramic substrate 8 so that it contacts with a predetermined pressure.
The adhesives 10 and 11 are cured while being heated, and the electrodes of the diode chips 13a and 13b are connected. As a result, the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 are integrated into a laminated body 17. In addition, the lower electrodes 26 of the diode chips 13a and 13b are
a and 26b are electrically connected to the wirings 15a and 15b of the ceramic substrate 7, and the bump electrodes 12a and 12b of the diode chips 13a and 13b are the wirings 1 of the ceramic substrate 8.
6a and 16b are electrically connected (see FIG. 12).

Next, a conductive paste is applied to both ends of the laminate 17 (both sides of the notch 31 on the side where the notch 31 is present), followed by firing to form the common electrode 34 and the independent electrodes 32 and 33. . After that, Ni plating and solder plating (not shown) are applied to the surfaces of the common electrode 34 and the independent electrodes 32 and 33 by electrolytic barrel plating or the like.

Next, the common electrode 34 and the independent electrodes 32, 3
A glass-based paste is applied to the surface of the laminated body 17 between the three and baked to form the protective film 6. As a result, the airtightness and moisture resistance of the chip type diode module 30 are improved.

According to the method of manufacturing the chip type diode module 30 of the second embodiment, the spacer 9 is superposed on the ceramic substrate 7 with the adhesive 10 interposed therebetween, and the spacer 9 is inserted into the two insertion holes 14a and 14b, respectively. The diode chips 13a and 13b are inserted, and the ceramic substrate 8 is further laid on the spacer 9 with the adhesive 11 interposed therebetween to form a laminated body 17, and then the common electrode 34 is formed independently of the common electrodes 34 on both end sides of the laminated body 17. Since it can be formed by forming the electrodes 32 and 33 and covering the surface of the laminated body 17 between the common electrode 34 and the independent electrodes 32 and 33 with the protective film 6, the manufacturing is facilitated and the manufacturing cost can be reduced.

Further, since a large number of the ceramic substrates 7, 8 and the spacer 9 can be formed at once by batch processing, the manufacturing cost can be reduced.

According to the second embodiment, it is possible to provide the chip type diode module 30 having the common anode structure in which two diodes are incorporated.

(Embodiment 3) FIG. 15 is a perspective view showing the external appearance of a chip type diode module which is Embodiment 3 of the present invention, and FIG. 16 is an equivalent circuit diagram of the chip type diode module of Embodiment 3 of the present invention.

In the third embodiment, as shown in the equivalent circuit of FIG. 16, a chip type diode module 40 having a common cathode structure is provided. The chip-type diode module 40 of the third embodiment has the same internal structure as that of the second embodiment, but in appearance, as shown in FIG.
1 is on the right side, and the independent electrodes 42, 43 are on the left side. Therefore, the notch 31 is provided on the left side.

In the chip type diode module 40,
Although not shown, the cathode electrodes of the diode chips 13a and 13b serve as the common electrode 41, and the anode electrodes thereof serve as the independent electrodes 42 and 43 independently of each other.

Also in the case of the chip type diode module 40 of the third embodiment, since the structure is essentially the same as that of the chip type diode module 30 of the second embodiment, for example, the vertical, horizontal and height are 1.0 mm, 0.5 m
The size can be reduced to m, 0.5 mm.

Further, structurally, the diode chip 13 is
The structure in which a and 13b are sealed in a ceramic substrate consisting of the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 has a high airtightness.

In terms of manufacturing, the ceramic substrate 7, the spacer 9, and the ceramic substrate 8 can be manufactured at a low cost by batch processing, and in the assembly, the diode chips 13a and 13b are incorporated, and the ceramic substrate 7 and the spacer are assembled. 9. Since the ceramic substrate 8 is sequentially stacked and the common electrode 41, the independent electrodes 42 and 43, and the protective film 6 are formed, the manufacturing is facilitated.
A reduction in manufacturing cost can be achieved.

(Embodiment 4) FIG. 17 is a perspective view showing the external appearance of a chip type diode module which is Embodiment 4 of the present invention, FIG. 18 is a sectional view taken along the line CC of FIG. 17, and FIG. It is an equivalent circuit schematic of the chip type diode module of Example 4.

In the chip type diode module 50 of the fourth embodiment, one diode chip 13b in the third embodiment is mounted upside down as shown in FIG. 18, and two diodes 13a are provided as shown in FIG. , 13b are connected in series. And the diode 13a
The intermediate electrode 51 is drawn out between the diode 13b and the diode 13b.

The chip-type diode module 50 of the fourth embodiment can also be made smaller and airtight as in the above-mentioned embodiment, and the manufacturing cost can be reduced.

(Fifth Embodiment) FIG. 20 is a perspective view showing the appearance of a chip type diode module according to a fifth embodiment of the present invention, and FIG. 21 is an equivalent circuit diagram of the chip type diode module according to the fifth embodiment.

As can be seen from the appearance, the chip-type diode module 60 of the fifth embodiment has the notches 31 corresponding to the centers of both ends of the rectangular body 2, so that each electrode is independent of the independent electrodes 61 to 61. It is 64.

That is, in the chip type diode module 60 of the fifth embodiment, as shown in the equivalent circuit of FIG.
It has a module structure (multiple diode circuit configuration) in which two diodes 13a and 13b are incorporated in parallel. Even with a structure with two diodes, the external dimensions are vertical,
The width and height can be reduced to 1.0 mm, 0.5 mm, and 0.5 mm.

In the case of the chip type diode module 60 of the fifth embodiment, in the chip type diode module 30 of the second embodiment, the common electrode 34 is provided with the notch 31 to form an independent electrode.

Also in the case of the chip-type diode module 60 of the fifth embodiment, since it has the overlapping structure of the ceramic substrates as in the case of the above-mentioned embodiment, the size can be reduced and the airtightness can be improved. Further, reduction of manufacturing cost can be achieved.

In the multiple diode circuit configuration, more diodes are incorporated, and the cuts 31 are symmetrically provided at both ends of the rectangular body 2 in accordance with the number of incorporated diodes, so that multiple diodes can be achieved.

(Sixth Embodiment) FIG. 22 is a schematic plan view showing a chip type diode module according to a sixth embodiment of the present invention, and FIG. 23 is an equivalent circuit diagram of the chip type diode module of the sixth embodiment.

The chip type diode module 70 of the sixth embodiment has a structure in which two sets of circuit configurations (embodiment 2) in which two diodes are common anodes are provided.

The components of the chip type diode module 70 are the same as those of the chip type diode module 30 of the second embodiment, but there are many diodes to be incorporated (diode chips 13a, 13b, 13c, 13d) and a common electrode. 2 (common electrodes 34a, 34b) and 4 independent electrodes (independent electrodes 32a, 32b, 33a, 33)
b) and many.

Therefore, as shown in FIG. 22, one notch 31 is provided at the left end of the rectangular body 2 to form two common electrodes 34a and 34b, and three notches 31 are provided at the right end of the rectangular body 2. Three independent electrodes 32a, 32b,
33a and 33b are formed.

The spacer 9 has four insertion holes 14a,
14b, 14c and 14d are provided, and the diode chips 13a, 13b, 13c and 13d are inserted therein. Further, the four wirings 15 are provided on the upper surface of the ceramic substrate 7.
a, 15b, 15c, 15d are provided, and four wirings 16a, 16b, 16c, 1 are provided on the lower surface of the ceramic substrate 8.
6d is provided. Each diode chip 13a, 1
The lower electrodes of 3b, 13c, and 13d are wiring 15 respectively.
a, 15b, 15c, 15d, and the bump electrodes 12a, 12b, 12c, 12d of the diode chips 13a, 13b, 13c, 13d are electrically connected to the wiring 16a,
It is electrically connected to 16b, 16c and 16d.

The chip type diode module 70 has a structure in which the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 are laminated and adhered. Therefore, although different from the drawing, the vertical and horizontal dimensions can be made as small as 1.0 mm each. it can. Moreover, the height can be reduced to 0.5 mm.

The chip-type diode module 70 of the sixth embodiment also has a structure in which the ceramic substrate 7, the spacer 9 and the ceramic substrate 8 are laminated and adhered as in the case of the above-described embodiment, so that the product has excellent airtightness. It is possible to reduce the manufacturing cost.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say, for example,
A plurality of sets of circuit configurations for common anode may be incorporated, and a circuit configuration for common anode and a configuration for common cathode may be incorporated together. Further, a chip type diode module in which an anode common circuit configuration, a cathode common circuit configuration, and a multiple diode circuit configuration are appropriately combined can achieve miniaturization, airtightness, and manufacturing cost reduction.

[0094]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1) According to the present invention, one or a plurality of diode chips are incorporated between two wiring boards with a spacer interposed, and both ends of a laminated body composed of the wiring board, the spacer, and the wiring board are provided at both ends. Since each has a structure in which one or more external electrodes are formed, it is possible to provide a chip-type diode or chip-type diode module that is small and has excellent airtightness.

[Brief description of drawings]

FIG. 1 is a perspective view showing a chip type diode that is Embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view of the chip type diode according to the first embodiment.

FIG. 3 is an exploded perspective view showing the correlation between two wiring substrates and spacers in the manufacture of the chip type diode of the first embodiment.

FIG. 4 is a perspective view showing a manufacturing state of a wiring board in manufacturing the chip type diode according to the first embodiment.

FIG. 5 is a perspective view showing a manufacturing state of a spacer in manufacturing the chip type diode according to the first embodiment.

FIG. 6 is a perspective view showing a state in which a wiring board, a spacer, and a wiring board are laminated in the manufacture of the chip-type diode of the first embodiment.

FIG. 7 is a perspective view showing a state in which external electrodes are formed on both ends of the laminated body in the manufacture of the chip-type diode of the first embodiment.

FIG. 8 is a perspective view showing a state in which a protective film is formed on the surface of the laminated body between the external electrodes in the manufacture of the chip type diode of the first embodiment.

FIG. 9 is a partially cutaway plan view showing a chip type diode module according to a second embodiment of the present invention.

FIG. 10 is an equivalent circuit diagram of the chip type diode module according to the second embodiment.

11 is a cross-sectional view taken along the line AA of FIG.

12 is a sectional view taken along the line BB of FIG.

FIG. 13 is a perspective view showing the appearance of a chip type diode module according to the second embodiment.

FIG. 14 is an exploded perspective view showing the correlation between two wiring boards and spacers in the manufacture of the chip-type diode module of the second embodiment.

FIG. 15 is a perspective view showing the external appearance of a chip type diode module that is Embodiment 3 of the present invention.

FIG. 16 is an equivalent circuit diagram of the chip type diode module according to the third embodiment.

FIG. 17 is a perspective view showing the outer appearance of a chip type diode module that is Embodiment 4 of the present invention.

18 is a cross-sectional view taken along the line CC of FIG.

FIG. 19 is an equivalent circuit diagram of the chip type diode module according to the fourth embodiment.

FIG. 20 is a perspective view showing the appearance of a chip type diode module that is Embodiment 5 of the present invention.

FIG. 21 is an equivalent circuit diagram of the chip type diode module of the fifth embodiment.

FIG. 22 is a schematic plan view showing a chip type diode module that is Embodiment 6 of the present invention.

FIG. 23 is an equivalent circuit diagram of the chip type diode module of the sixth embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Chip type diode, 2 ... Rectangular body, 3, 4 ... External electrode, 6 ... Protective film, 7, 8 ... Ceramic substrate, 9 ... Spacer, 10, 11 ... Adhesive agent, 12, 12a, 12b ... Bump electrode, 13 ... Diode chip, 13, 13a, 13
b, 13c, 13d ... Diode (diode chip), 14, 14a, 14b, 14c, 14d ... Insertion hole, 15, 15a, 15b, 15c, 15d ... Wiring, 1
6, 16a, 16b, 16c, 16d ... Wiring, 17 ... Laminated body, 20, 21 ... Ceramic plate, 22 ... Wiring, 23 ...
Ceramic substrate, 24, 25 ... scribe line, 2
6, 26a, 26b ... Lower electrode, 30 ... Chip type diode module, 31, 31a, 31b, 31c ... Notch, 32, 32a, 32b, 32c, 32d, 33 ...
Independent electrodes, 34, 34a, 34b ... Common electrode, 40 ... Chip type diode module, 41 ... Common electrode, 42,
43 ... Independent electrode, 50 ... Chip type diode module, 51 ... Intermediate electrode, 60, 70 ... Chip type diode module.

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/60 311 H01L 23/12 H01L 23/48 H01L 25/00-25/18

Claims (3)

(57) [Claims] 1. At least inserting a diode chip
A spacer made of an insulating plate having two insertion holes, two wiring boards attached to the front and back surfaces of the spacer with insulating adhesives, respectively, and one electrode placed in the insertion hole and having one electrode. a plurality of diode chips connected to the one or the other of the other electrode is connected to a predetermined wiring of the wiring board in a predetermined wiring of the other or one of the wiring board, the wiring board, the spacer, and the wiring substrate One or a plurality of cuts formed on at least one end of the laminated body
And the notch insulates the adjacent external electrodes, and the notch causes the external electrode to
Independent electrode connected to a unique electrode, and
A chip-type diode module comprising a common electrode connected to an electrode of a chip. 2. Two of the plurality of diode chips
Anode common circuit or cathode
At least one of the common circuits is configured
The chip-type datum according to claim 1, characterized in that
Iodo module. 3. At least inserting a diode chip
A spacer made of an insulating plate having two insertion holes, and an insulating adhesive agent on each of the front and back surfaces of the spacer.
The two wiring boards that are stuck together and the one electrode that is put in the insertion hole
One or the other wiring board is connected to the specified wiring and the other
Connect the electrode to the specified wiring on the other or one wiring board.
A plurality of diode chips to be connected, the wiring board, the spacer, and the wiring board are laminated.
1 to a plurality of cuts formed at both ends of the laminated body
Notches, the notches insulate the adjacent outer electrodes, and the notches cause the respective outer electrodes to have the respective diodes.
Features and to Ruchi-up diode module that has a separate electrode that connected to the chip-specific electrodes.