JP3402043B2 - Field effect transistor - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power type field effect transistor (MOSFET), and more particularly to a technique for reducing ON resistance.

[0002]

2. Description of the Related Art A first conventional example of a power MOSFET is shown in FIG. 6 (HR Chang et al "U
LTRA LOW SPECIFIC ON-RESISTANSE UMOS FET "1986, IED
M, P. 642-645). In the figure, an N type Si drain region 30 is formed on the main surface of a high concentration N ⁺ type Si substrate 35. A P-type Si base region 40 and a high-concentration N ⁺ -type Si source region 70 are formed in the N-type Si drain region 30. Further, a gate electrode 60 made of polycrystalline Si is formed in a groove reaching the N-type Si drain region 30 from the high-concentration N ⁺ -type Si source region 70 with a gate oxide film 50 interposed therebetween. Further, the drain electrode 100 is provided on the back surface side.
Is formed, and the source electrode 90 is formed on the front surface side.

When a gate voltage is applied to the gate electrode 60 with the drain voltage applied between the drain electrode 100 and the source electrode 90, the gate electrode 60
The P-type Si base region 40 along the side wall of N is inverted to N-type to form a channel, and a current flows from the drain electrode 100 to the source electrode 90.

The first conventional example has an advantage that the channel integration is improved because the channel region is formed along the side wall of the groove, and in this respect, the on-resistance can be reduced. However, in order to make the breakdown voltage between the drain and source higher than a predetermined value when the current is off, N
The concentration of the type Si drain region 30 has to be reduced and the thickness has to be increased, and there has been a limit in reducing the on-resistance.

FIG. 7 shows a second conventional example of a power MOSFET. In the figure, an N-type SiC drain region 20 is formed on the main surface of the high-concentration N ⁺ -type SiC substrate 10. P-type S on the N-type SiC drain region 20
The iC base region 45 is formed and its P-type SiC
High concentration N ⁺ type SiC source region 75 in the base region 45
Are formed. Further, a gate electrode 60 made of polycrystalline Si is formed in a groove reaching the N-type SiC drain region 20 from the high-concentration N ⁺ -type SiC source region 75, with a gate oxide film 50 interposed therebetween. Further, similarly to the above, the drain electrode 100 and the source electrode 90 are formed.

In the second conventional example, since wide band gap SiC is used as the semiconductor material, N-type SiC is used.
There is an advantage that the resistance of the N-type SiC drain can be reduced by increasing the concentration of the drain region 20 and making it thinner. However, the electron mobility of the inversion layer of the P-type SiC base region 45 is lower than that of Si by almost an order of magnitude, and there is a limit in increasing the channel resistance and reducing the on-resistance.

[0007]

In the first conventional example, the concentration of the N-type Si drain region 30 is lowered and the thickness is increased in order to make the breakdown voltage between the drain and the source at a predetermined value or more when the current is turned off. Therefore, there is a problem that there is a limit in reducing the on-resistance.
On the other hand, in the second conventional example, the electron mobility of the inversion layer of the P-type SiC base region 45 is lower than that of Si by an order of magnitude, and the channel resistance increases, so that there is a limit to reducing the on-resistance. There was a problem.

The present invention has been made by paying attention to such a conventional problem, and the on-resistance can be reduced by greatly reducing the drain resistance without increasing the channel resistance. The purpose is to provide a transistor.

[0009]

To solve the above problems SUMMARY OF THE INVENTION The invention of Claim 1 wherein, said wide bandgap semiconductor on the main surface side of a wide bandgap semiconductor of a first conductive type
A first conductivity type silicon semiconductor drain region having a band gap smaller than that of the body, a second conductivity type silicon semiconductor base region is formed in the first conductivity type silicon semiconductor drain region, and the second conductivity type is formed. A high-concentration first conductivity type silicon semiconductor source region is formed in the silicon semiconductor base region, and a plurality of trenches are formed from the silicon semiconductor source region to the wide band gap semiconductor.
The gist is that a gate electrode is formed inside each groove through a gate insulating film.

[0010] According to a second aspect of the invention, the wideband gears on the main surface side of the wide band gap semiconductor of a first conductivity type
A second conductivity type silicon semiconductor base region having a band gap smaller than that of a semiconductor, and a high-concentration first conductivity type silicon semiconductor source region formed in the second conductivity type silicon semiconductor base region; A gist is that a plurality of trenches reaching from the silicon semiconductor source region to the wide band gap semiconductor are formed, and a gate electrode is formed inside each of the trenches via a gate insulating film.

A third aspect of the present invention is characterized in that, in the field effect transistor according to the first or second aspect, the wide band gap semiconductor is made of silicon carbide.

[0012]

[0013]

According to the invention of claim 1, the wide band gap semiconductor of the first conductivity type is provided on the main surface side thereof.
Bandgap smaller than bandgap semiconductor
Forming a conductivity type silicon semiconductor drain region,
A second conductivity type silicon semiconductor base region is formed in the conductivity type silicon semiconductor drain region, and a high-concentration first conductivity type silicon semiconductor source region is formed in the second conductivity type silicon semiconductor base region; A plurality of trenches reaching the wide band gap semiconductor from the silicon semiconductor source region are formed, and a gate electrode is formed inside each of the trenches via a gate insulating film. -When a high drain voltage is applied between the sources and the distance between the gate electrodes is sufficiently short, the silicon semiconductor drain region sandwiched between the gate electrodes is pinched off, and most of the drain voltage is a wide band gap semiconductor. Take to the side. That is, the electric field applied to the silicon semiconductor drain region is shielded by the gate electrode, and most of the drain voltage is applied to the wide band gap semiconductor side having a high critical electric field. Therefore, even if the thickness of the wide band gap semiconductor is reduced, the breakdown withstand voltage can be ensured, the drain resistance can be reduced, and the on-resistance can be reduced.

According to the second aspect of the present invention, since the entire drain region is formed of the wide band gap semiconductor, the same action as that of the first aspect of the invention can be achieved without increasing the channel resistance. The drain resistance can be further reduced, and the on-resistance can be further reduced.

According to the third aspect of the invention, since the critical electric field of silicon carbide is about 10 times higher than that of a silicon semiconductor, the thickness of the drain region can be made sufficiently thin and the drain resistance can be greatly increased. It becomes possible to reduce the on-resistance.

[0016]

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a first embodiment of the present invention. In addition, in FIG. 1 and the like and a second embodiment described later, the same or equivalent members and parts as those in FIGS. 6 and 7 are represented by the same reference numerals.

First, referring to FIG. 1A, MOSFET
The configuration of will be described. An N-type SiC drain region 20 is formed on one main surface of a high-concentration N ⁺ -type SiC (silicon carbide) substrate 10. An N-type Si drain region 30 is formed on the N-type SiC drain region 20, and the N-type S drain region 30 is formed.
A P-type Si base region 40 serving as a channel region is formed in the i drain region 30. P-type Si base region 4
A high concentration N ⁺ type Si source region 70 and a high concentration P ⁺ type Si base region 80 are formed on the surface of 0. A thick oxide film 25 of 500 Å to several thousand Å is formed on the bottom of the groove reaching the N-type SiC drain region 20 from the high-concentration N ⁺ type Si source region 70, and 100 Å to 1 on the side wall of the groove.
A 000Å gate oxide film (insulating film) 50 is formed. A gate electrode 60 made of, for example, polycrystalline Si is formed inside the groove. A drain electrode 100 is formed on the back surface of the high concentration N ⁺ type SiC substrate 10.
Further, the high concentration N ⁺ type Si source region 70 and the high concentration P ⁺
A source electrode 90 connected to the type Si base region 80 is formed. The source electrode 90 is insulated from the gate electrode by the oxide film 55.

Next, the MOSFE configured as described above
The action of T will be described. The breakdown voltage Vb between the drain and the source and the N-type Si drain region 30 or N
The following relationship is established between the impurity concentration Nd of the type SiC drain region 20 and the one-dimensional approximation model.

Nd = ε · Ec ² / (2q · Vb) (1) where ε is the dielectric constant, q is the elementary charge, and Ec is the critical electric field. At this time, the width W of the depletion layer is represented by W = 2Vb / Ec (2). Therefore, the resistance Rd of the N-type Si drain region 30 or the N-type SiC drain region 20 is

[Number 1] Rd = W / (q · Nd · μ n) = 4Vb 2 / (ε · μ n · Ec 3) ... becomes (3). Where μ _n is the electron mobility in the bulk of each material. For example, a wide band gap semiconductor such as SiC has a critical electric field Ec of about 10 times that of Si, so that the drain resistance Rd can be significantly reduced. In the case of Si, the relationship of Nd = 2.01 × 10 ¹⁸ · Vb ^−4/3 (4) W = 2.58 × 10 ⁻⁶ · Vb ^7/6 (5) approximately holds.

As shown in the first conventional example of FIG.
When forming a 0V MOSFET with a Si semiconductor,
The type Si drain region 30 has a concentration of 1.7E15 cm ⁻³ and a thickness of 12.5 μm. If the electron mobility μ _n in the Si bulk at this time is 1340 cm ² / V · s, N
Type Si drain region 30 has a resistance of 3.4 × 10 ⁻³ Ωcm
It becomes ² .

As shown in this embodiment of FIG. 1A,
Si is used as a part of the drain region of the 200V MOSFET
In the case of forming a C semiconductor, the concentration of the N-type SiC drain region 20 is 1. If the formula Ec = 1.95 × 10 ⁴ Nd ^0.131 (6) obtained from the experiment for SiC is used.
At 6E17 cm ⁻³ , the thickness is 1.2 μm. Since a low-resistance storage layer is formed in the region of the N-type Si drain region 30 facing the gate electrode 60, only the resistance of the N-type SiC drain region 20 is considered. Electron mobility in SiC bulk μ _n is 300 cm
² / V · s, the resistance of the N-type SiC drain region 20 is 1.6 × 10 ⁻⁵ Ωcm ² , which can be reduced by two digits compared with Si.

Next, consider the state in which the current is off. FIG. 1B shows a potential distribution when a high voltage is applied between the drain and the source in the off state. Gate electrode 60
If the distance between the grooves is sufficiently short, the S sandwiched between the grooves
The electric field in the i semiconductor region is pinched off, and most of the voltage is applied to the oxide film 25 at the bottom of the groove and the N-type SiC drain region 20. Therefore, the breakdown voltage Vb between the drain and the source is determined by the critical electric field of the N-type SiC drain region 20. In this embodiment, since the bottom of the groove is formed of the thick oxide film 25, the gate oxide film 50 is formed.
The breakdown breakdown voltage of the device can be improved more easily than the breakdown voltage.

Further, the structure of forming the N-type Si drain region 30 in the present embodiment with the N-type SiC drain region 20 and connecting the P-type Si base region 40 and the N-type SiC drain region 20 is also the same as above. Similarly, the ON resistance can be reduced.

Next, a method of manufacturing the MOSFET of this embodiment will be described with reference to FIGS. High concentration N ⁺ type Si
An N-type SiC drain region 20 is formed on the C substrate 10. An oxide film 25 is formed in one main surface of the N-type SiC drain region 20 (FIG. 2A). The N-type Si drain region 30 is formed by being connected to the N-type SiC drain region 20 by, for example, a wafer bonding technique (FIG. 2B). After the N type Si drain region 30 is ground to a predetermined thickness, the P type Si base region 40 is formed (FIG. 2C). A groove 65 reaching the oxide film 25 is formed (FIG. 3A). The gate oxide film 50 is formed on the sidewall of the trench 65 (FIG. 3B). Inside the groove 65, the gate electrode 60 made of, for example, polycrystalline Si is formed (FIG. 3).
(C)). An oxide film 55 is formed on the surface of the gate electrode 60, and a high concentration N is formed on a part of the surface of the P-type Si base region 40.
^{A +} type Si source region 70 is formed (FIG. 4A). A high-concentration P ⁺ type Si base region 80 is formed, and a source electrode 90 and a drain electrode 100 are formed (FIG. 4).
(B)).

FIG. 5 shows a second embodiment of the present invention. In the present embodiment, the oxide film 120 and the low resistance layer 130 made of, for example, silicide are formed on the one main surface side of the P-type Si substrate 110. N-type S on the low resistance layer 130
The iC drain region 20 is formed. An N-type Si drain region 30 is formed on the N-type SiC drain region 20, and a P-type Si base region 40 is formed in the N-type Si drain region 30. N-type Si drain region 3
High concentration N ⁺ type Si drain extraction region 1 in a part of 0
40 is formed. High concentration N ⁺ type Si source region 7
0, the thick oxide film 25 at the bottom of the groove and the gate oxide film 50,
The structure of the gate electrode 60 and the like inside the groove is almost the same as that of the first embodiment. The sidewall of the groove facing the high-concentration N ⁺ type Si drain extraction region 140 has a thickness of 500 Å ~
A thick oxide film 150 having a thickness of several thousand Å is formed. The drain electrode 105 and the source electrode 9 are formed on the same main surface side of the device.
0 is formed, and another MOS is formed by the oxide film 160.
It is insulated from the FET.

In the present embodiment, since the source, gate, and drain electrodes are formed on the same main surface side of the device, it is possible to integrate a plurality of output transistors on the same chip.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a MOSFET according to the present invention and a potential distribution diagram when off.

FIG. 2 is a process drawing showing the manufacturing method of the first embodiment.

FIG. 3 is a process drawing that follows FIG.

FIG. 4 is a process drawing that follows FIG.

FIG. 5 is a sectional view showing the configuration of the second exemplary embodiment of the present invention.

FIG. 6 is a sectional view showing a first conventional example of a MOSFET.

FIG. 7 is a sectional view showing a second conventional example of a MOSFET.

[Explanation of symbols]

10 high-concentration N ⁺ type SiC substrate 20 N-type SiC drain region 30 N-type Si drain region 40 P-type base region (channel region) 50 gate oxide film (insulating film) 60 gate electrode 65 groove 70 high-concentration N ⁺ type Si source Region 80 High-concentration P ⁺ type Si base region 90 Source electrode 100 Drain electrode

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-60-227476 (JP, A) JP-A-5-21801 (JP, A) JP-A 61-276265 (JP, A) JP-A-4- 61170 (JP, A) JP 5-283691 (JP, A) JP 8-8429 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 29/78 H01L 29 / 786

Claims (3)

(57) [Claims] 1. A main surface side of a wide bandgap semiconductor of the first conductivity type is provided with a band than the wide bandgap semiconductor.
A first conductivity type silicon semiconductor drain region having a small gap is formed, a second conductivity type silicon semiconductor base region is formed in the first conductivity type silicon semiconductor drain region, and the second conductivity type silicon semiconductor base region is formed. Forming a high-concentration first conductivity type silicon semiconductor source region in the region;
A field effect transistor comprising: a plurality of trenches extending from the silicon semiconductor source region to the wide band gap semiconductor; and a gate electrode formed inside each of the trenches via a gate insulating film. 2. A wide bandgap semiconductor of the first conductivity type is provided on the main surface side of the wide bandgap semiconductor rather than the wide bandgap semiconductor.
A second conductivity type silicon semiconductor base region having a small gap is formed, and a high-concentration first conductivity type silicon semiconductor source region is formed in the second conductivity type silicon semiconductor base region. A field effect transistor characterized in that a plurality of trenches reaching a wide band gap semiconductor are formed, and a gate electrode is formed inside each trench via a gate insulating film. 3. The wide bandgap semiconductor is made of silicon carbide.
Alternatively, the field effect transistor according to claim 2.