JP3379487B2 - Single wafer type wet processing apparatus and wet processing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer type wet processing apparatus and a wet processing method therefor, and particularly to a processing apparatus capable of performing uniform wet etching on a large semiconductor wafer (hereinafter referred to as a wafer). And a processing method.

[0002]

2. Description of the Related Art For wet etching of wafers,
There are a batch method in which a plurality of wafers are mounted on a carrier and the carriers are immersed in an etching chemical solution, and a single wafer method in which the etching solution is supplied to the wafer surface to process each wafer.

The batch method seems to be suitable for mass production at first glance, but a large etching solution tank is required regardless of the number of wafers to be processed, and the cleaning apparatus and the drying apparatus are large, so that the entire manufacturing apparatus is large. Will turn into.

Further, even if the wet etching process is performed on a plurality of wafers at the same time, in the case of the single wafer type in which the next step is carried out one by one, the waiting time becomes long, and the generation of a natural oxide film and the attachment of dirt are caused during that time. Inconvenience occurs.

Therefore, especially for large wafers,
The single-wafer type wet etching treatment, in which the treatment is performed for each sheet depending on the situation, is more advantageous.

FIG. 11 is a diagram showing a conventional single wafer type wet etching apparatus. The rear surface 32 of the wafer 30 whose front surface 31 is subjected to wet etching is placed in contact with the upper surface of the rotary table 86, and one etching solution supply nozzle 85 located on the central portion of the wafer is installed in the upper portion 81 of the processing container. It is provided in the center and one etching solution recovery nozzle 87 is installed in the lower portion 82 of the processing container.

Then, from the etching liquid supply device 83 to the supply tube 84 and the supply nozzle 85 on the central portion of the surface 31 of the wafer 30 which is being rotated by the rotary table 86.
The etching solution 91 is dropped through. Since the wafer is rotating, the etching liquid 91 flows toward the outer surface of the wafer by the centrifugal force and spreads over the entire surface, and the processed etching liquid 92 is collected by the etching liquid collecting device 88 through the collecting nozzle 87 and the collecting tube 89. It

[0008]

However, in the conventional technique as shown in FIG. 11, since the etching liquid is supplied only from the central portion of the wafer, the etching liquid treatment with a large amount of the etching liquid which is not deteriorated near the center. However, the flow rate per unit area decreases as going outside,
Further, since the chemical liquid also deteriorates and the processing effect decreases, it is difficult to make the processing uniform in the central portion and the outer portion of the wafer. Also,
This tendency becomes larger as the diameter of the wafer becomes larger.

Further, since the rotary table is used, the contamination caused by the particles generated from the rotary mechanism or the damage of the rotary mechanism lowers the productivity.

Further, since the rotary table is provided below the back surface of the wafer, it becomes impossible to simultaneously perform different processes on the front surface and the back surface of the wafer.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a single-wafer type wet processing apparatus and a wet processing method thereof which can perform uniform processing on a central portion and an outer portion of a large-diameter wafer.

Another object of the present invention is to provide a wet processing apparatus and a wet processing method thereof, which eliminates the inconvenience of contamination and damage due to the rotary table.

Another object of the present invention is to provide a wet processing apparatus and a wet processing method thereof which can simultaneously perform different processings on a front surface and a back surface of a wafer.

[0014]

The first feature of the present invention is that the first main surface of the wafer and the processing container form the first feature.
And a second space formed by the processing container and the other main surface of the wafer are isolated from each other, and a large number of supply nozzles and recovery nozzles are alternately arranged to face the one main surface, Attach a Teflon tube to each of the supply nozzles.
The supply tubes join together and this group of supply tubes is etched
Collecting nozzles for each of the collecting nozzles
The recovery tube of the Teflon tube is connected to the
A group of tubes is collected in an etching solution recovery device, supplies an etching solution from each of the supply nozzles toward the one main surface, and has a structure of an etching device that recovers the etching solution from each of the recovery nozzles. It is in a leaf type wet processing device. Here, in the single-wafer type wet etching processing apparatus including the etching processing section, the cleaning processing section and the drying processing section, the structure of the etching apparatus can be used for the etching processing section.

The second feature of the present invention is that the first space formed by the one main surface of the wafer and the processing container, and the second space formed by the other main surface of the wafer and the processing container. Are separated from each other, and a large number of supply nozzles and recovery nozzles are alternately arranged so as to face the one main surface .
Connect the Teflon tube supply tube to the supply nozzle.
And supply this group of supply tubes to the cleaning solution supply system.
The Teflon tube is attached to each of the recovery nozzles.
The collection tubes are combined and the collection tube group
In a single-wafer type wet processing device having a structure of a cleaning device that collects the cleaning liquid from each of the supply nozzles toward the one main surface and collects the cleaning liquid from each of the recovery nozzles. . Here, in the single-wafer type wet etching processing apparatus including the etching processing section, the cleaning processing section, and the drying processing section, the structure of the cleaning apparatus can be used for the cleaning processing section.

A third feature of the present invention is a single-wafer type wet etching apparatus having an etching processing section, a cleaning processing section and a drying processing section, wherein the etching processing section has a main surface of a wafer and processing. The first space formed by the container, the other main surface of the wafer, and the second space formed by the processing container are isolated from each other, and a large number of supply nozzles and recovery nozzles face the one main surface. The nozzles are arranged alternately with each other, and a Teflon tube is attached to each of the supply nozzles.
The supply tubes of the tube are connected, and this group of supply tubes
Collected in the etching liquid supply device and collect each of the above
Connect the Teflon tube collection tube to the nozzle, and
The collection tube of the
Is, the etching solution from each of the supply nozzle supplies toward the one main surface, from each of the recovery nozzle using an etching apparatus for recovering the etchant, the first main semiconductor wafer in the cleaning section The first space formed by the surface and the processing container is separated from the other main surface of the semiconductor wafer and the second space formed by the processing container, and a large number of supplies are provided facing the one main surface. nozzles and recovery nozzles are arranged each other alternately, each of the test
The supply tube of the Teflon tube is connected to the supply nozzle,
This group of supply tubes is collected in the cleaning liquid supply device and
Attach a Teflon tube recovery tube to each of the recovery nozzles.
Tube is connected, and this collection tube group is the cleaning liquid recovery device.
In the single-wafer type wet processing apparatus, the cleaning liquid is supplied from the supply nozzles toward the one main surface, and the cleaning liquids are collected from the recovery nozzles. Here, in the drying processing section, a first space formed by the one main surface of the wafer and the processing container is separated from a second space formed by the other main surface of the wafer and the processing container. A large number of supply nozzles and recovery nozzles are alternately arranged to face the one main surface, and a Teflon tube is provided to each of the supply nozzles.
The supply tubes are joined and this group of supply tubes
They are collected by the body feeding device and the
The collection tube of the Freon tube is connected, and this collection tube is
Group of tubes are collected in a drying gas recovery device, a drying gas is supplied from each of the supply nozzles toward the one main surface, and a drying device that recovers the drying gas from each of the recovery nozzles is installed. Can be used.

A fourth feature of the present invention is that the first space formed by one main surface of the wafer and the processing container and the second space formed by the other main surface of the wafer and the processing container. Are separated from each other, and a large number of supply nozzles and recovery nozzles are alternately arranged so as to face the one main surface .
Connect the Teflon tube supply tube to the supply nozzle.
And this supply tube group supplies the first etching liquid.
Teflon is collected in the device and put into each of the recovery nozzles.
The collection tube of the tube is joined and the collection tube of this collection tube
The group is collected in a first etching liquid recovery device, supplies the first etching liquid toward the one main surface from each of the supply nozzles, and recovers the first etching liquid from each of the recovery nozzles. The structure of the first etching device and a large number of supply nozzles and recovery nozzles are alternately arranged to face the other main surface, and the second etching liquid is directed from the respective supply nozzles to the other main surface. And supply a Teflon tube to each of the supply nozzles.
The supply tubes are joined and this group of supply tubes is connected to the second
Of the above described collecting
The collection tube of the Teflon tube is connected to the cheat,
A collection of collection tubes collected in the second etchant collection system
And a structure of a second etching apparatus for collecting the second etching liquid from each of the recovery nozzles.

The fifth feature of the present invention is that the first space formed by the one main surface of the wafer and the processing container, and the second space formed by the other main surface of the wafer and the processing container. Are separated from each other, and a large number of supply nozzles and recovery nozzles are alternately arranged so as to face the one main surface .
Connect the Teflon tube supply tube to the supply nozzle.
And the supply tube group
Collected, and put a Teflon tube on each of the recovery nozzles.
The collection tubes of the
And a main surface of the etching device that collects the etching liquid from each of the supply nozzles toward the one main surface and collects the etching liquid from each of the recovery nozzles. A large number of supply nozzles and recovery nozzles are alternately arranged to face each other, and a Teflon tube is provided to each of the supply nozzles.
The supply tubes are connected, and this group of supply tubes supplies the cleaning liquid.
It is collected in the feeding device and is put into each of the recovery nozzles.
The recovery tube of the
Group of the cleaning liquid is collected in the cleaning liquid recovery device, the cleaning liquid is supplied from each of the supply nozzles toward the other main surface, and the cleaning device is configured to collect the cleaning liquid from each of the recovery nozzles. Wet processing equipment.

Further, in each of the above-mentioned wet processing apparatuses, the supply nozzles and the recovery nozzles may be arranged in a matrix in a biaxial direction. Alternatively, the supply nozzles and the recovery nozzles may be concentrically arranged with respect to the center of the wafer to be processed. Further, in each of the above-described wet processing devices, the cross sectional shape of the nozzle holes of the supply nozzle and the recovery nozzle may be a circle, a quadrangle, or a hexagon.

The sixth feature of the present invention resides in a single-wafer type wet processing method in which a wafer is processed using any of the above-described wet processing apparatuses.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Next, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view including a partial side view showing a wet etching apparatus as a first embodiment of the present invention. FIG. 2 is a plan view showing the arrangement of the nozzles of FIG. FIG. 3 is a cross-sectional view showing the movement of the etching liquid in FIG. 1 in an enlarged manner.

The upper part 1 of the processing container has an upper plate part 5 and a flange part 3.
The upper plate portion 5 has a large number of supply nozzles 10 and recovery nozzles 20, that is, nozzle holes formed in a matrix. The supply nozzles 10 and the recovery nozzles 20 are alternately arranged in at least one direction.

In FIG. 2, the supply nozzle 10 is shown in white and the recovery nozzle 20 is shown by dot hatching. In this embodiment, the supply nozzle 10 and the recovery nozzle 20 are shown in both the X and Y directions. It shows that they are arranged alternately one by one.

The total number of both nozzles distributed facing the entire surface of the wafer is 100 to 30 for an 8-inch wafer.
The number of nozzles is zero, and the range of the total number of both nozzles increases or decreases in proportion to the increase or decrease of the wafer area. The diameter of the nozzle is, for example, 1
It is 0 mm.

The upper part 1 of the processing container is a molded product of PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer) which is a fluororesin having excellent heat resistance and chemical resistance. Alternatively, a molded product of FEP (tetrafluoroethylene-hexafluoropropylene copolymer), which is a similar fluororesin, may be used.

A supply tube 11 of a Teflon tube is connected to each supply nozzle 10, and the supply tube 1
Group 1 is collected in the etching liquid supply device 12.
Similarly, a recovery tube 21 of a Teflon tube is connected to each recovery nozzle 20, and a group of the recovery tubes 21 is collected in the etching solution recovery device 22.

The processing container lower part 2 which is a molded product of PFA or FEP has a lower plate part 6 and a flange part 4. In the state of FIG. 1, the dimension between the upper surface of the upper part of the processing container and the lower surface of the lower part of the processing container is, for example, 30 mm.

A main surface (front surface) 31 for processing the peripheral portion of the lower surface side of the wafer 30, for example, an 8-inch wafer 30 having a diameter of 8 inches, into the recessed portion of the flange portion (wafer setting portion) 4 of the lower portion 2 of the processing container. Insert it so that is on the top, and set it. As a result, the space 8 between the wafer 30 and the lower plate portion 6 of the lower portion 2 of the processing container is hermetically sealed.

Next, the upper portion 1 of the processing container is covered, and the peripheral portion on the upper surface side of the wafer 30 is fitted and inserted into the concave portion of the flange portion 3 over the entire circumference and pressed. As a result, the space 7 between the one principal surface (front surface) 31 for etching the wafer 30 and the upper plate portion 5 of the processing container upper part 1 becomes a space 7 through which the etching liquid flows.

Since the space 8 between the wafer 30 and the lower plate portion 6 of the lower part 2 of the processing container is hermetically sealed, the etching solution does not inconveniently flow into the other main surface (back surface) 32 of the wafer 30. .

As shown in FIG. 1, after the flanges 4 and 5 are pressed against the peripheral portion of the wafer 30 over the entire circumference to form the hermetically sealed spaces 7 and 8, the etching liquid supply device 12 causes the etching liquid 13 to flow. A large number of supply tubes 11
From the respective supply nozzles 10 to the supply nozzles 1
The etching solution 13 blown from 0 is blown onto the surface 31 of the wafer 30 to perform a predetermined etching. At the same time, the used etching solution 23 starts to be forcibly recovered from the respective recovery nozzles 20 through the recovery tubes 21 to the etching solution recovery device 22.

That is, the etching liquid 13 blown out from all the supply nozzles 10 is uniformly applied to the entire surface of the wafer in terms of the amount of the chemical liquid and the pressure, and the processing surface 31 of the processing wafer 30 is uniformly processed. At the same time, as shown in FIG. 3, the etching liquid 23 after treating the surface 31 is immediately and forcibly recovered by the adjacent recovery nozzle 20. In FIG. 3, the supplied etching liquid 13 is shown in white, and the etching liquid 23 collected after etching is shown by dot hatching.

FIG. 4 is a sectional view including a partial side view showing a cleaning device according to a second embodiment of the present invention. In FIG. 4, the same or similar parts as those in FIG. 1 are designated by the same reference numerals, and a duplicate description will be omitted.

The cleaning apparatus 200 shown in FIG. 4 includes the cleaning solution supply apparatus 12 and the etching solution recovery apparatus 22 of the wet etching apparatus 100 shown in FIG.
2 and the cleaning liquid recovery device 52.

Similar to the operation of FIG. 1, in FIG. 5, pure water which is the cleaning liquid 43 supplied is sprayed from the respective supply nozzles 10 and pure water used as the cleaning liquid 53 recovered from the adjacent recovery nozzle 20 is used. It is forcibly collected.
By using such a cleaning apparatus 200, uniform cleaning is performed on the entire surface of the wafer, which results in efficient cleaning processing.

FIG. 5 is a sectional view including a partial side view showing a first mixing processing apparatus according to a third embodiment of the present invention. In FIG. 5, the same or similar parts as those in FIG. 1 are designated by the same reference numerals, and the duplicate description will be omitted.

In the first mixing processing apparatus of FIG. 5, the wafer 3
Although the mechanism for supplying / recovering the etching liquid for the etching process of one main surface (front surface) 0 of 0 is the same as that in FIG. 1, the etching process is performed so that the other main surface (back surface) 32 of the wafer 30 can be simultaneously etched. It has a liquid supply / collection mechanism.

That is, the lower plate portion 6A of the lower portion 2A of the processing container
Also, like the upper plate portion 5 of the processing container upper portion 1, a large number of supply nozzles 10 and recovery nozzles 20, that is, nozzle holes are formed in a matrix. Further, the supply nozzles 10 and the chemical liquid recovery nozzles 20 in the lower plate portion 6A are also alternately arranged in at least one direction.

Then, as in FIG. 1, the peripheral portion on the lower surface side of the wafer 30 is fitted and inserted into the concave portion of the flange portion (wafer setting portion) 4A of the lower portion 2A of the processing container over the entire circumference to set the wafer 30 and the wafer 30. Lower plate portion 6 of lower container 2A
A space 8A is formed between A and the space 8A is a space through which the etching liquid flows.

A supply tube 11 of a Teflon tube is connected to each supply nozzle 10 of the lower plate portion 6A, and the group of the supply tubes 11 is a second etching solution supply device 12.
Collected in A. Similarly, a recovery tube 21 of a Teflon tube is attached to each recovery nozzle 20 of the lower plate portion 6A.
Are connected to each other, and the group of the recovery tubes 21 is collected in the second etching liquid recovery device 22A.

Then, the second etching liquid supply device 12A
From the second etching solution 13A to a large number of supply tubes 1
The second etching solution 13A, which is sent to the respective supply nozzles 10 from 1 and is blown out from the supply nozzles 10, is blown to the back surface 32 of the wafer 30 to perform a predetermined etching. At the same time, the second etching solution 23 used
A starts the forced recovery from the respective recovery nozzles 20 through the recovery tube 21 to the second etching liquid recovery device 22A.

According to this embodiment, since the upper space 7 and the lower space 8A are separated from each other by the flanges 3 and 4A as described above, the front surface 31 and the back surface 32 of the wafer 30 are separated from each other. Different etching processes can be performed simultaneously. For example, when the etching treatment for patterning the surface 31 is performed with the etching liquids 13 and 23,
The back surface 32 is subjected to a back surface etching treatment with the second etching solution 1
The production efficiency can be improved by performing 3A and 23A.

FIG. 6 is a sectional view including a partial side view showing a second mixing processing apparatus according to the fourth embodiment of the present invention. In FIG. 6, the same or similar parts as those in FIGS. 1 and 5 are designated by the same reference numerals, and therefore, duplicated description will be omitted.

The second mixing processing apparatus shown in FIG. 6 corresponds to the first mixing processing apparatus shown in FIG.
The second etching liquid supply device 12A and the second etching liquid recovery device 22A of the mixed processing device of No. 2 are replaced with a cleaning liquid supply device 42 and a cleaning liquid recovery device 52, respectively.

As with the operation of FIG. 4, as the cleaning liquid 53 to which pure water is supplied, the cleaning liquid 53 is sprayed from each supply nozzle 10 onto the back surface 32 of the wafer 30 and recovered from the adjacent recovery nozzle 20. The pure water used is forcibly collected. As a result, the entire back surface of the wafer is uniformly cleaned.

According to this embodiment, since the upper space 7 and the lower space 8A are separated from each other by the flanges 3 and 4A as described above, the etching treatment of the front surface 31 of the wafer 30 and the rear surface thereof are performed. The cleaning process of 32 can be performed at the same time, and the manufacturing efficiency can be improved.

FIG. 7 is a block diagram showing a wet etching processing apparatus as a fifth embodiment of the present invention.

The loader 410 mounted on the carrier 450
The wafer 30 loaded into the wafer is transferred to the etching processing unit 110, is transferred to the cleaning processing unit 210 after the etching processing, is transferred to the drying processing unit 310 after the cleaning processing, and is transferred to the unloader 420 after the drying processing. It is mounted on the 450 and carried out. Each transfer is automatically performed by the transfer robot 430. Moreover, each processing and conveyance are automatically performed.

Wet etching apparatus 400 of FIG.
An example of removing the natural oxide film on the surface 31 of the 8-inch wafer by etching will be described.

In the etching processing section 110, using the wet etching apparatus 100 shown in FIG. 1, 0.5 liter / min of diluted hydrofluoric acid (DHF) as an etching solution is uniformly applied to the entire surface of the wafer from all the supply nozzles 10.
Is blown out for 60 seconds to perform the etching process.

After that, in the cleaning processing unit 210, all the supply nozzles 10 using the cleaning apparatus 200 shown in FIG. 4 are used.
Then, 1.0 liter / min of pure water is uniformly blown as a cleaning liquid over the entire surface of the wafer for 30 seconds to perform the cleaning process.

Thereafter, in the drying processing section 310, the entire wafer is exposed to an inert gas and dried. Alternatively, in the drying processing section 310, the drying processing is performed using the drying device 300 shown in FIG. In FIG. 8, the same or similar parts to those in FIG.

In the drying device of FIG. 8, the etching liquid supply device 12 and the etching liquid recovery device 22 of the wet etching device 100 of FIG.
And a drying gas recovery device 72.

Similar to the operation of FIG. 1, in FIG. 8, as the drying gas 63 to which nitrogen gas is supplied, it is used as the drying gas 73 sprayed from each supply nozzle 10 and recovered from the adjacent recovery nozzle 20. Nitrogen gas is forcibly recovered. By using such a drying device 300, uniform drying is performed on the entire surface of the wafer, which results in an efficient drying process.

By using the drying apparatus 300 shown in FIG. 8 for drying in this embodiment, 5.0 liter / min of nitrogen gas as a drying gas is uniformly supplied from all the supply nozzles 10 to the entire surface of the wafer. It is blown out for 180 seconds to perform a drying process.

FIG. 9 is a plan view showing a modification of the nozzle arrangement. In FIG. 2, the supply nozzles 10 and the recovery nozzles 20 are alternately arranged in the X and Y directions, but in FIG.
The supply nozzle 1 or the recovery nozzle 20 is positioned on the same diameter from the center coinciding with the center of the wafer, and the supply nozzle 1
The diameter where 0 is located and the diameter where the supply nozzle 10 is located are alternately arranged, whereby the supply nozzle 1
0 and the recovery nozzles 20 are alternately arranged in the radial direction. Even with the arrangement shown in FIG. 9, the same effect as that of the arrangement shown in FIG. 2 can be obtained.

Further, in the embodiment, the supply nozzle 1
0 and the shape of the recovery nozzle 20, that is, the shape of the nozzle hole was a circle (a perfect circle), but as shown in FIG. 10A, the supply nozzle 10 and the recovery nozzle 20 were formed into a hexagonal shape to form a honeycomb grid. Alternatively, as shown in FIG. 10B, the supply nozzles 10 and the recovery nozzles 20 may be arranged in a square shape. Although the hexagonal shape and the quadrangular shape are more complicated to form than the round shape, they can be arranged at a higher density.

[0059]

As described above, according to the present invention, since the etching liquid or the cleaning liquid directly hits the entire processing surface of the processing wafer from a large number of supply nozzles and is immediately recovered from the adjacent recovery nozzle, the entire surface of the wafer is always cleaned. Processing is performed with a new etching solution or cleaning solution. Therefore, the entire surface can be uniformly processed, and the replacement efficiency is improved in any part.

Further, since the processing liquid is supplied to the entire surface of the wafer, even a large-diameter wafer can be processed uniformly.

Further, since the rotary table which rotates during the processing is not required, it is not related to the contamination of the rotary table by the particles due to the rotating mechanism or the deterioration of the productivity due to the damage of the rotating mechanism.

Further, since the space on the front surface side and the space on the back surface side of the wafer are separated from each other, there is no inconvenience that the processing liquid flowing in one space flows into the other space.

Further, since the space on the front surface side and the space on the back surface side of the wafer are isolated from each other, it is possible to perform different treatments on the front surface and the back surface, respectively, whereby the production efficiency can be improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view including a partial side view showing a wet etching apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing an array of nozzles in FIG.

FIG. 3 is a cross-sectional view showing the movement of the etching liquid in FIG. 1 in an enlarged manner.

FIG. 4 is a sectional view including a partial side view showing a cleaning device according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional view including a partial side view showing a first mixing processing apparatus as a third embodiment of the present invention.

FIG. 6 is a sectional view including a partial side view showing a second mixing processing apparatus as a fourth embodiment of the present invention.

FIG. 7 is a block diagram showing a wet etching processing apparatus as a fifth embodiment of the present invention.

8 is a sectional view including a partial side view showing a drying device that can be used in the wet etching processing apparatus of FIG.

FIG. 9 is a plan view showing a modified example of the arrangement of the supply nozzles and the recovery nozzles of the present invention.

FIG. 10 is a plan view showing a modified example of the nozzle shapes of the supply nozzle and the recovery nozzle of the present invention.

FIG. 11 is a sectional view including a partial side view showing a conventional etching apparatus.

[Explanation of symbols]

1 Processing container upper part 2,2A lower part of processing container 3 Flange part 4,4A flange 5 Upper plate 6,6A lower plate 7 Space where etching liquid flows 8 sealed space 8A Space where etching solution flows 10 supply nozzles 11 Supply tube 12 Etching liquid supply device 12A Second etching liquid supply device 13 Etching liquid supplied 13A Second supplied etching liquid 20 Recovery nozzle 21 Collection tube 22 Etchant recovery device 22A Second etching liquid recovery device 23 Recovered etching liquid 23A Second recovered etchant 30 wafers 31 surface (one main surface) 32 Back side (other main side) 42 Cleaning liquid supply device 43 Cleaning liquid supplied 52 Cleaning liquid recovery device 53 Washing liquid collected 62 Drying gas supply device 63 Drying gas supplied 72 Drying gas recovery device 73 Drying gas recovered 81 Upper part of processing container 82 Lower part of processing container 83 Etching liquid supply device 84 Supply tube 85 Etching liquid supply nozzle 86 rotating table 87 Etching liquid recovery nozzle 88 Etching liquid recovery device 91 etching liquid supplied 92 Recovered etching liquid 100 etching equipment 110 Etching part 200 cleaning equipment 210 Cleaning unit 300 dryer 310 Drying processing section 400 wet etching equipment 410 loader 420 Unloader 430 Transport robot 450 carriers

Claims (12)

(57) [Claims] 1. A first space formed by one main surface of a semiconductor wafer and a processing container is separated from a second space formed by another main surface of the semiconductor wafer and the processing container, and alternately arranging a number of supply nozzles and recovery nozzles each other facing the one main surface, each of said supply nozzle
The Teflon tube supply tube is connected to the
A group of supply tubes are collected in the etching solution supply device and
Attach a Teflon tube recovery tube to each of the recovery nozzles.
Of the etching solution is connected to the recovery tube group.
Collected in the yield devices, it is supplied toward an etchant to said one main surface from each of the supply nozzle, sheet characterized by having a structure of an etching apparatus for recovering the etchant from each of the recovery nozzle Type wet processing equipment. 2. A single-wafer type wet processing apparatus comprising an etching processing section, a cleaning processing section and a drying processing section,
The single-wafer type wet processing apparatus according to claim 1, wherein the structure of the etching apparatus is used in the etching processing unit. 3. A first space formed by one main surface of the semiconductor wafer and a processing container is separated from a second space formed by the other main surface of the semiconductor wafer and the processing container, and alternately arranging a number of supply nozzles and recovery nozzles each other facing the one main surface, each of said supply nozzle
The Teflon tube supply tube is connected to the
A group of supply tubes are collected in the cleaning liquid supply device,
A recovery tube of Teflon tube is attached to the recovery nozzle of
Combined, this collection of collection tubes collected in the wash solution collection device
Is, the cleaning liquid from each of the supply nozzle supplies toward the one main surface, a single wafer type wet treatment apparatus characterized by having a structure of a cleaning device for collecting the washing liquid from each of the recovery nozzle. 4. A single-wafer type wet processing apparatus comprising an etching processing section, a cleaning processing section and a drying processing section,
The single-wafer type wet processing apparatus according to claim 3, wherein the structure of the cleaning apparatus is used in the cleaning processing unit. 5. A single-wafer type wet processing apparatus having an etching processing section, a cleaning processing section and a drying processing section, wherein the etching processing section is formed by a main surface of a semiconductor wafer and a processing container. Is separated from the other main surface of the semiconductor wafer and the second space formed by the processing container, and a large number of supply nozzles and recovery nozzles are alternately arranged to face the one main surface. , Each
The supply tube of the Teflon tube is attached to the supply nozzle of
Combined, this supply tube group is the etchant supply device
Are collected in the Teflon tube
The collection tubes of the tube
Collected in the etching liquid recovery device, the etching liquid is supplied from each of the supply nozzles toward the one main surface,
An etching apparatus that collects the etching liquid from each of the collection nozzles is used, and the cleaning processing unit includes a first main surface of a semiconductor wafer and a processing container.
Is separated from the other main surface of the semiconductor wafer and the second space formed by the processing container, and a large number of supply nozzles and recovery nozzles are alternately arranged to face the one main surface. , Teflon tube to each of the supply nozzles.
The supply tubes of the tube are connected, and this group of supply tubes
Collected in the cleaning liquid supply device, each of the recovery nozzles
The recovery tube of the Teflon tube is connected to the
A group of tubes is collected in a cleaning liquid recovery device, a cleaning device is supplied from each of the supply nozzles toward the one main surface, and the cleaning device is used to recover the cleaning liquid from each of the recovery nozzles. Leaf type wet processing equipment. 6. The drying processing section includes a first space formed by the one main surface of the semiconductor wafer and a processing container, and a second space formed by the other main surface of the semiconductor wafer and the processing container. Is separated from each other, and a large number of supply nozzles and recovery nozzles are alternately arranged to face the one main surface, and a Teflon tube is provided to each of the supply nozzles.
The supply tubes are joined and this group of supply tubes
They are collected by the body feeding device and the
The collection tube of the Freon tube is connected, and this collection tube is
A group of tubes are collected in a drying gas recovery device, a drying gas is supplied from each of the supply nozzles toward the one main surface, and a drying device that recovers the drying gas from each of the recovery nozzles is installed. The wet processing apparatus according to claim 5, which is used. 7. A first space formed by one main surface of the semiconductor wafer and a processing container is separated from a second space formed by the other main surface of the semiconductor wafer and the processing container, and alternately arranging a number of supply nozzles and recovery nozzles each other facing the one main surface, each of said supply nozzle
The Teflon tube supply tube is connected to the
A group of supply tubes collected in the first etchant supply
The Teflon tube is attached to each of the recovery nozzles.
The collection tubes are joined and this collection tube group is
First etching device that collects the first etching liquid toward the one main surface from each of the supply nozzles and collects the first etching liquid from each of the recovery nozzles. And a large number of supply nozzles and recovery nozzles are alternately arranged to face the other main surface.
The etchant was supplied toward the other major surface, respectively
The supply tube of the Teflon tube is attached to the supply nozzle of
Combined, and this group of supply tubes supplies the second etchant.
It is collected in the feeding device and is put into each of the recovery nozzles.
The recovery tube of the
A group of the second etching liquid collecting device, and a structure of a second etching device for collecting the second etching liquid from each of the collecting nozzles. Processing equipment. 8. A first space formed by one main surface of the semiconductor wafer and a processing container is separated from a second space formed by the other main surface of the semiconductor wafer and the processing container, alternately arranging a number of supply nozzles and recovery nozzles each other facing the one main surface, each of said supply nozzle
The Teflon tube supply tube is connected to the
A group of supply tubes are collected in the etching solution supply device and
Attach a Teflon tube recovery tube to each of the recovery nozzles.
Of the etching solution is connected to the recovery tube group.
Collected in the yield devices, each of the etchant from the supply nozzle supplies toward the one main surface, and the structure of each of the etching apparatus for recovering from the recovery nozzles etchant said, facing the other main surface A large number of supply nozzles and recovery nozzles are alternately arranged in each
Connect the Teflon tube supply tube to the supply nozzle.
And supply this group of supply tubes to the cleaning solution supply system.
The Teflon tube is attached to each of the recovery nozzles.
The collection tubes are combined and the collection tube group
Collected in the yield device, the cleaning liquid from each of the supply nozzle supplies toward the other major surface, structural sheet form characterized in that it comprises a cleaning device for collecting the washing liquid from each of the recovery nozzle Wet processing equipment. 9. The single-wafer type wet processing apparatus according to claim 1, wherein the supply nozzles and the recovery nozzles are arranged in a matrix in a biaxial direction. 10. The single-wafer wet processing apparatus according to claim 1, wherein the supply nozzles and the recovery nozzles are arranged concentrically. 11. The single wafer type wet according to claim 1, wherein the nozzle holes of the supply nozzle and the recovery nozzle have a cross-sectional shape of a circle, a quadrangle or a hexagon. Processing equipment. 12. A single wafer type wet processing method, wherein a semiconductor wafer is processed by using the wet processing apparatus according to any one of claims 1 to 11.